High-power uplink and downlink switching devices and communication equipment

Abstract

The present application relates to a high-power uplink and downlink switching device and communication equipment. In the high-power uplink and downlink switching device, based on the first RF port, the RF switching switch and the synchronous control module can cooperate to complete the switching of the uplink and downlink links; the first port of the circulator is connected to the output end of the power amplifier module, the second port is connected to the second RF port, and the third port is connected to the low noise amplifier module through the first RF switch; the third port is also connected to the high-power load resistor and the second RF switch respectively through the first microstrip line to be grounded respectively; the RF impedance from the first end to the second end of the first microstrip line is in a high-impedance state. Based on the above structure, the downlink reflected power can be absorbed by the high-power load resistor without affecting the uplink; and when the uplink is turned on, the RF switch cooperates with the periodic transformation of the impedance characteristics of the microstrip line to ensure that the RF power does not leak to the load resistor, thereby realizing high-power capacity TDD switching and overcoming the limitation of device power capacity.

Description

Technical Field

[0001] The present application relates to the field of communication technology, and in particular to a high-power uplink and downlink switching device and communication equipment. Background Art

[0002] At present, information and communication technology is developing rapidly. From the 2G (2-Generation wireless telephone technology) era to the large-scale application of 4G (the 4th Generation mobile communication technology), the business volume, communication rate and bandwidth carried by the communication network have increased dramatically, which has put forward high requirements on communication equipment, especially in the upcoming 5G (5th-Generation) communication era, where everything is connected and has characteristics such as ultra-large bandwidth and ultra-low latency, which can meet the application requirements in different scenarios, such as AR (Augmented Reality) and autonomous driving.

[0003] The ultra-high performance and experience of 5G communication also bring new challenges to communication equipment. For example, a certain operator has proposed the requirement of 2.6GHz (gigahertz) and 160W (watt) communication equipment. The introduction of this equipment has brought unprecedented challenges to the device. The traditional uplink and downlink switching devices cannot meet the needs of communication development. Summary of the invention

[0004] Based on this, it is necessary to provide a high-power uplink and downlink switching device and communication equipment to address the problem that traditional uplink and downlink switching devices cannot meet the needs of high-power communication equipment.

[0005] In order to achieve the above objectives, on the one hand, an embodiment of the present application provides a high-power uplink and downlink switching device, including:

[0006] RF switch; the common end of the RF switch is used to connect to the first RF port.

[0007] Power amplifier module; the input end of the power amplifier module is connected to the downstream end of the radio frequency switching switch.

[0008] Circulator; the first port of the circulator is connected to the output end of the power amplifier module, and the second port is used to connect to the second RF port.

[0009] A first radio frequency switch; a first end of the first radio frequency switch is connected to the third port of the circulator.

[0010] A low noise amplifier module; the input end of the low noise amplifier module is connected to the second end of the first RF switch; the output end of the low noise amplifier module is connected to the uplink end of the RF switching switch.

[0011] A first microstrip line; the first end of the first microstrip line is connected to the third port of the circulator; wherein, in the first microstrip line, the radio frequency impedance from the first end to the second end is in a high impedance state.

[0012] A load resistor, wherein a first end of the load resistor is connected to the second end of the first microstrip line, and a second end of the load resistor is grounded.

[0013] A second radio frequency switch; a first end of the second radio frequency switch is connected to the second end of the first microstrip line, and a second end of the second radio frequency switch is grounded.

[0014] Synchronous control module; the input end of the synchronous control module is used to connect to the first RF port; the output end of the synchronous control module is respectively connected to the control end of the RF switching switch, the control end of the first RF switch and the control end of the second RF switch.

[0015] In one embodiment, the output end of the synchronization control module is also connected to the control end of the power amplifier module and the control end of the low noise amplifier module respectively.

[0016] In one embodiment, the synchronization control module includes a synchronization unit and a level inverter.

[0017] The input end of the synchronization unit is used to connect to the first RF port, and the output end of the synchronization unit is respectively connected to the input end of the level inverter, the control end of the RF switch, the control end of the power amplifier module, and the control end of the second RF switch. The output end of the level inverter is respectively connected to the control end of the low noise amplifier module and the control end of the first RF switch.

[0018] In one embodiment, a coupler connected between the first RF port and the synchronization control module is further included. The input end of the coupler is used to connect to the first RF port, and the coupling end is connected to the input end of the synchronization control module.

[0019] In one of the embodiments, the present invention further includes a second microstrip line, a third microstrip line, a fourth microstrip line, a fifth microstrip line, a sixth microstrip line and a seventh microstrip line.

[0020] The downstream end of the radio frequency switch is connected to the input end of the power amplifier module through a second microstrip line.

[0021] The output end of the power amplification module is connected to the first port of the circulator through a third microstrip line.

[0022] The second port of the circulator is connected to the second radio frequency port through a fourth microstrip line.

[0023] The third port of the circulator is respectively connected to the first end of the first radio frequency switch and the first end of the first microstrip line through the fifth microstrip line.

[0024] The second end of the first radio frequency switch is connected to the input end of the low noise amplifier module through a sixth microstrip line.

[0025] The output end of the low noise amplifier module is connected to the uplink end of the radio frequency switch through the seventh microstrip line.

[0026] In one embodiment, the electrical lengths of the second microstrip line, the third microstrip line, the fourth microstrip line, the fifth microstrip line, the sixth microstrip line and the seventh microstrip line are all in the range of 10 degrees to 180 degrees.

[0027] In one embodiment, the characteristic impedances of the second microstrip line, the third microstrip line, the fourth microstrip line, the fifth microstrip line, the sixth microstrip line and the seventh microstrip line are all in the range of 48 ohms to 52 ohms.

[0028] In one embodiment, the characteristic impedance of the first microstrip line ranges from 50 ohms to 100 ohms.

[0029] In one embodiment, the electrical length of the first microstrip line ranges from 85 degrees to 95 degrees.

[0030] On the other hand, an embodiment of the present application further provides a communication device, including the high-power uplink and downlink switching device as described above.

[0031] One of the above technical solutions has the following advantages and beneficial effects:

[0032] Based on the first RF port, the RF switching switch and the synchronous control module can cooperate to complete the switching of the uplink and downlink links; the first port of the circulator is connected to the output end of the power amplifier module, the second port is connected to the second RF port, and the third port is connected to the low noise amplifier module through the first RF switch, and the third port is also connected to the high-power load resistor and the second RF switch through the first microstrip line, respectively, to be grounded respectively; wherein the RF impedance from the first end to the second end of the first microstrip line is in a high-impedance state. Based on the above structure, the downlink reflected power can be absorbed by the high-power load resistor without affecting the uplink; and when the uplink is turned on, the RF switch cooperates with the periodic transformation of the impedance characteristics of the microstrip line to ensure that the RF power does not leak to the load resistor, thereby realizing high-power capacity TDD (Time Division Duplexing) switching. Based on this, the embodiment of the present application can use a low-power RF switch to achieve high-power uplink and downlink switching, overcome the limitation of the device power capacity, and has the advantages of low cost and easy implementation. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] The above and other purposes, features and advantages of the present application will become clearer through a more specific description of the preferred embodiments of the present application shown in the accompanying drawings. The same reference numerals indicate the same parts in all the accompanying drawings, and the drawings are not deliberately scaled to the actual size, and the focus is on illustrating the subject matter of the present application.

[0034] Figure 1 is a first schematic structural diagram of a high-power uplink and downlink switching device in an embodiment;

[0035] Figure 2 is a second schematic structural diagram of a high-power uplink and downlink switching device in one embodiment;

[0036] Figure 3 is a third schematic structural diagram of a high-power uplink and downlink switching device in one embodiment;

[0037] Figure 4 It is a fourth schematic structural diagram of a high-power uplink and downlink switching device in an embodiment. DETAILED DESCRIPTION

[0038] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present application are given in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0039] It should be noted that when an element is considered to be "connected" to another element, it may be directly connected to the other element and integrated therewith, or there may be an intermediate element at the same time. The terms "first end", "second end", "control end" and similar expressions used herein are for illustrative purposes only.

[0040] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those generally understood by those skilled in the art to which the present application belongs. The terms used herein in the specification of the present application are only for the purpose of describing specific embodiments and are not intended to limit the present application. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0041] The ultra-high performance and experience of 5G communications place high demands on communication equipment, especially technical indicators such as power capacity, signal bandwidth, linearity and efficiency. Therefore, it is very difficult for equipment manufacturers to meet the requirements put forward by operators. To achieve new requirements, they can only innovate technically and overcome the bottlenecks brought about by the device level. Due to the limitations of current device technology and design levels, there is no high-power (greater than 100W (watts)) and low-latency (nanosecond level) RF switch, and the entire uplink and downlink active module cannot be designed and integrated in a normal manner; therefore, for high-power communication equipment, traditional high-power uplink and downlink TDD switching devices cannot meet the requirements. To this end, the embodiment of the present application proposes an integrated active device for uplink and downlink switching that effectively meets high-power TDD, which has the advantages of flexible control and low cost, and can meet the needs of next-generation mobile communications and equipment.

[0042] In one embodiment, a high-power uplink and downlink switching device is provided, such as Figure 1 As shown, including:

[0043] RF switch; the common end of the RF switch is used to connect to the first RF port.

[0044] Power amplifier module; the input end of the power amplifier module is connected to the downstream end of the radio frequency switching switch.

[0045] Circulator; the first port of the circulator is connected to the output end of the power amplifier module, and the second port is used to connect to the second RF port.

[0046] A first radio frequency switch; a first end of the first radio frequency switch is connected to the third port of the circulator.

[0047] A low noise amplifier module; the input end of the low noise amplifier module is connected to the second end of the first RF switch; the output end of the low noise amplifier module is connected to the uplink end of the RF switching switch.

[0048] A first microstrip line; the first end of the first microstrip line is connected to the third port of the circulator; wherein, in the first microstrip line, the radio frequency impedance from the first end to the second end is in a high impedance state.

[0049] A load resistor, wherein a first end of the load resistor is connected to the second end of the first microstrip line, and a second end of the load resistor is grounded.

[0050] A second radio frequency switch; a first end of the second radio frequency switch is connected to the second end of the first microstrip line, and a second end of the second radio frequency switch is grounded.

[0051] Synchronous control module; the input end of the synchronous control module is used to connect to the first RF port; the output end of the synchronous control module is respectively connected to the control end of the RF switching switch, the control end of the first RF switch and the control end of the second RF switch.

[0052] Specifically, the high-power uplink and downlink switching device includes an RF switching switch, a power amplifier module, a circulator, a first RF switch, a low noise amplifier module and a synchronization control module. The common end of the RF switching module is connected to the first RF port, which is used to transmit an uplink signal to the first RF port, or to receive a downlink signal transmitted by the first RF port. The input end of the power amplifier module is connected to the downlink end of the RF switching switch, and the output end is connected to the first port of the circulator; at the same time, the second port of the circulator is connected to the second RF port, which is used to transmit a downlink signal to the second RF port, or to receive an uplink signal transmitted by the second RF port; based on this, the RF switching switch, the power amplifier module and the circulator cooperate to form a downlink link. In addition, the input end of the low noise amplifier module is connected to the third port of the circulator through the first RF switch, and the output end is connected to the uplink end of the RF switching switch; based on this, the RF switching switch, the low noise amplifier module, the first RF switch and the circulator cooperate to form an uplink link. The input end of the synchronization control module is connected to the first RF port, and the output end is respectively connected to the RF switching switch and the first RF switch; based on this, the synchronization control module can obtain the synchronization signal through the first RF port, control the RF switching switch to turn on the corresponding RF link according to the synchronization signal, realize the uplink and downlink switching, and control the on and off of the first RF switch to avoid crosstalk between uplink and downlink signals.

[0053] Furthermore, the high-power uplink and downlink switching device also includes a first microstrip line, a load resistor and a second RF switch. The first end of the first microstrip line is respectively connected to the third port of the circulator and the first end of the first RF switch, and the second end is respectively connected to the first end of the load resistor and the first end of the second RF switch; the second end of the load resistor and the second end of the second RF switch are both grounded. At the same time, the RF impedance from the first end of the first microstrip line to its second end is in a high-impedance state; the output end of the synchronization control module is connected to the control end of the second RF switch. Based on this, the synchronization control module can control the on and off of the second RF switch according to the synchronization signal, and can control the first RF switch and the second RF switch to be turned on, ensuring that the RF impedance enters the high impedance after passing through the first microstrip line, so that the uplink signal completely enters the uplink through the first RF switch, avoiding the RF power leakage to the load resistor; it can also control the first RF switch and the second RF switch to be disconnected, ensuring that the downlink reflected RF signal is completely absorbed by the load resistor without affecting the uplink.

[0054] It should be noted that the high power mentioned in the embodiment of the present application may range from 100W to 300W. The RF switching switch may be a single-pole double-throw switch. The power amplifier module may include a power amplifier and a peripheral circuit. In the circulator, the external signal obtained from the first port is output from the second port, the external signal obtained from the second port is output from the third port, and the external signal obtained from the third port is output from the first port. The low noise amplifier module may include a low noise amplifier and a peripheral circuit. In the first microstrip line, the direction from the first end to the second end is a high impedance state, which can be achieved by the electrical length and characteristic impedance of the microstrip line; wherein the electrical length is determined by the frequency and wavelength of the RF signal. The synchronization control module can be used to obtain a synchronization signal from the first RF port and output a control signal according to the synchronization signal; wherein the synchronization signal can be coupled to the first RF port by an external device, or can be obtained by a TDD uplink and downlink signal; the control signal can be used to indicate the action of each RF switch. Optionally, the synchronization control module may include a coupler, a switch device, a level inverter, etc., or may be mainly composed of a synchronization circuit or a processor, which is not specifically limited here.

[0055] The first RF switch and the second RF switch can be selected as normally open RF switches or normally closed RF switches according to actual needs; accordingly, when controlling the first RF switch and the second RF switch, the synchronization control module can output a control signal of a corresponding level to indicate whether the RF switch is turned on or off. For example, in downlink signal transmission, the synchronization control module can output a high-level signal to the first RF switch and the second RF switch to disconnect the first RF switch and the second RF switch. At the same time, in uplink signal transmission, the synchronization control module can output a low-level signal to the first RF switch and the second RF switch to turn on the first RF switch and the second RF switch. It should be noted that the selection of the RF switch and the control signal output by the synchronization control module can be matched and set according to actual needs, and no specific restrictions are made here.

[0056] Based on the above structure, the downlink reflected power can be absorbed by the high-power load resistor without affecting the uplink; and when the uplink is turned on, the RF switch cooperates with the periodic transformation of the microstrip line impedance characteristics to ensure that the RF power does not leak to the high-power load resistor, thereby realizing high-power capacity TDD switching. Based on this, the embodiment of the present application can use a low-power RF switch to achieve high-power uplink and downlink switching, overcome the limitation of device power capacity, and have the advantage of low cost.

[0057] In one example, the transmission process of the downlink signal may be as follows: the first RF port acquires the downlink signal, and the synchronization control module controls the RF switching switch to turn on the downlink end and controls the first RF switch and the second RF switch to turn off based on the first synchronization signal; the first RF port transmits the downlink signal to the power amplifier module through the RF switching switch; the power amplifier module amplifies the downlink signal, and transmits the amplified downlink signal to the first port of the circulator, and then outputs it from the second port of the circulator to the second RF port, completing the amplification and output of the downlink signal; at the same time, the reflected RF signal generated during the downlink signal transmission sequentially passes through the third port of the circulator and the first microstrip line to reach the load resistor, thereby absorbing the downlink reflected power and avoiding affecting the uplink.

[0058] In another example, the transmission process of the uplink signal may be as follows: the second RF port acquires the uplink signal, and the synchronization control module controls the RF switching switch to turn on the uplink end and controls the first RF switch and the second RF switch to turn on based on the second synchronization signal; the second RF port transmits the uplink signal to the second port of the circulator, and then outputs it from the third port of the circulator; since the RF impedance of the first microstrip line is in a high-impedance state from the first end of the first RF switch to the load resistor, the uplink signal transmitted from the third port is completely transmitted to the low noise amplifier module through the first RF switch and will not leak to the load resistor; after the low noise amplifier module amplifies the uplink signal, the amplified uplink signal is transmitted to the first RF port through the RF switching switch to complete the amplification and output of the uplink signal.

[0059] In one embodiment, the output end of the synchronous control module is also connected to the control end of the power amplifier module and the control end of the low noise amplifier module respectively.

[0060] Specifically, the synchronization control module can also be used to control the power amplifier module and the low noise amplifier module. Exemplarily, the synchronization control module can control the power amplifier module to be powered on and the low noise amplifier to be powered off during downlink signal transmission; specifically, during downlink signal transmission, the first output end of the synchronization control module can send a high level to the power amplifier module, and the second output end can send a low level to the low noise amplifier module, thereby realizing the control of the power amplifier module and the low noise amplifier module. For another example, during uplink signal transmission, the synchronization control module can control the power amplifier module to be powered off and the low noise amplifier to be powered on. Based on the above structure, the synchronization control module in the embodiment of the present application can control the power amplifier module and the low noise amplifier module according to the synchronization signal, further avoiding crosstalk between uplink and downlink signals, improving the reliability of uplink and downlink switching, and reducing the energy consumption of the device.

[0061] In one embodiment, Figure 2 As shown, the synchronization control module includes a synchronization unit and a level inverter.

[0062] The input end of the synchronization unit is used to connect to the first RF port, and the output end of the synchronization unit is respectively connected to the input end of the level inverter, the control end of the RF switch, the control end of the power amplifier module, and the control end of the second RF switch. The output end of the level inverter is respectively connected to the control end of the low noise amplifier module and the control end of the first RF switch.

[0063] Specifically, the synchronization control module may include a synchronization unit and a level inverter. The input end of the synchronization unit serves as the input end of the synchronization control module and is connected to the first RF port; the output end of the synchronization unit is connected to the input end of the level inverter and is used to control the RF switching switch, the power amplifier module and the second RF switch. The level inverter can be used to control the control end of the low noise amplifier module and the first RF switch according to the signal transmitted by the synchronization unit. Based on the above structure, the embodiment of the present application can cooperate with the existing synchronization circuit and the level inverter to achieve the synchronous output of control signals of different levels, ensure the timeliness of uplink and downlink switching, and have the characteristics of low cost.

[0064] Exemplarily, when transmitting downlink signals, the synchronization unit may output a high level to control the RF switching switch to turn on the downlink link, power on the power amplifier module, and disconnect the second RF switch; at the same time, the level inverter may output a low level to the low noise amplifier module and the first RF switch according to the high level output by the synchronization unit, so as to control the low noise amplifier module to be powered off and the first RF switch to be disconnected. When transmitting uplink signals, the synchronization unit may output a low level to control the RF switching switch to turn on the uplink link, power off the power amplifier module, and turn on the second RF switch; at the same time, the level inverter may output a high level to the low noise amplifier module and the first RF switch according to the low level output by the synchronization unit, so as to control the low noise amplifier module to be powered on and the first RF switch to be turned on.

[0065] In one embodiment, the high-power uplink and downlink switching device further comprises a coupler connected between the first RF port and the synchronization control module. The input end of the coupler is used to connect to the first RF port, and the coupling end is connected to the input end of the synchronization control module.

[0066] Specifically, a coupler can be used to connect the synchronization control module and the first RF port; the synchronization control module can obtain a synchronization signal through the coupler at the first RF port. Based on the above structure, the synchronization signal can be obtained through simple devices, while ensuring the reliability of uplink and downlink, reducing the cost of equipment; and according to different types of synchronization signals, couplers with different parameters can be selected for matching, thereby improving the applicability of the embodiments of the present application.

[0067] In one embodiment, the high-power uplink and downlink switching device further includes a second microstrip line; the downlink end of the radio frequency switching switch is connected to the input end of the power amplification module through the second microstrip line.

[0068] Specifically, the downstream end of the RF switching switch and the input end of the power amplifier module are connected via a second microstrip line. The second microstrip line can be used for RF power transmission. Optionally, the electrical length of the second microstrip line ranges from 10 degrees to 180 degrees; preferably, the electrical length of the second microstrip line ranges from 25 degrees to 35 degrees, such as 27 degrees, 29 degrees, 30 degrees, 32 degrees or 34 degrees; the characteristic impedance of the second microstrip line ranges from 48 ohms to 52 ohms, such as 49 ohms, 50 ohms or 51 ohms.

[0069] In one embodiment, the high-power uplink and downlink switching device further includes a third microstrip line; the output end of the power amplification module is connected to the first port of the circulator through the third microstrip line.

[0070] Specifically, the output end of the power amplifier module and the first port of the circulator are connected via a third microstrip line. The third microstrip line can be used for RF power transmission. Optionally, the electrical length of the third microstrip line ranges from 10 degrees to 180 degrees; preferably, the electrical length of the second microstrip line ranges from 25 degrees to 35 degrees, such as 27 degrees, 29 degrees, 30 degrees, 32 degrees or 34 degrees; the characteristic impedance of the third microstrip line ranges from 48 ohms to 52 ohms, such as 49 ohms, 50 ohms or 51 ohms.

[0071] In one embodiment, the high-power uplink and downlink switching device further includes a fourth microstrip line; the second port of the circulator is connected to the second radio frequency port via the fourth microstrip line.

[0072] Specifically, the second port and the second RF port of the circulator are connected via a fourth microstrip line. The fourth microstrip line can be used for RF power transmission. Optionally, the electrical length of the fourth microstrip line ranges from 10 degrees to 180 degrees; preferably, the electrical length of the second microstrip line ranges from 25 degrees to 35 degrees, such as 27 degrees, 29 degrees, 30 degrees, 32 degrees or 34 degrees; the characteristic impedance of the fourth microstrip line ranges from 48 ohms to 52 ohms, such as 49 ohms, 50 ohms or 51 ohms.

[0073] In one embodiment, the high-power uplink and downlink switching device further includes a fifth microstrip line; the third port of the circulator is respectively connected to the first end of the first radio frequency switch and the first end of the first microstrip line through the fifth microstrip line.

[0074] Specifically, the first end of the fifth microstrip line is connected to the third port of the circulator, and the second end is respectively connected to the first end of the first RF switch and the first end of the first microstrip line. The fifth microstrip line can be used for RF power transmission. Optionally, the electrical length of the fifth microstrip line ranges from 10 degrees to 180 degrees; preferably, the electrical length of the second microstrip line ranges from 25 degrees to 35 degrees, such as 27 degrees, 29 degrees, 30 degrees, 32 degrees or 34 degrees; the characteristic impedance of the fifth microstrip line ranges from 48 ohms to 52 ohms, such as 49 ohms, 50 ohms or 51 ohms.

[0075] In one embodiment, the high-power uplink and downlink switching device further includes a sixth microstrip line; the second end of the first RF switch is connected to the input end of the low noise amplifier module through the sixth microstrip line.

[0076] Specifically, the second end of the first RF switch is connected to the low noise amplifier module through a sixth microstrip line. The sixth microstrip line can be used to ensure that when the uplink works, the RF signal takes the path in the direction of the low noise amplifier module, and when the downlink works, the RF signal takes the path in the direction of the first microstrip line; at the same time, the sixth microstrip line can also be used for conventional RF power transmission.

[0077] Optionally, the electrical length of the sixth microstrip line ranges from 10 degrees to 180 degrees; preferably, the electrical length of the second microstrip line ranges from 25 degrees to 35 degrees, such as 27 degrees, 29 degrees, 30 degrees, 32 degrees or 34 degrees; the characteristic impedance of the sixth microstrip line ranges from 48 ohms to 52 ohms, such as 49 ohms, 50 ohms or 51 ohms.

[0078] In one embodiment, the high-power uplink and downlink switching device further includes a seventh microstrip line; the output end of the low noise amplifier module is connected to the uplink end of the radio frequency switching switch through the seventh microstrip line.

[0079] Specifically, the output end of the low noise amplifier module and the upstream end of the RF switching switch are connected through the seventh microstrip line. The seventh microstrip line can be used for RF power transmission. Optionally, the electrical length of the seventh microstrip line ranges from 10 degrees to 180 degrees; preferably, the electrical length of the second microstrip line ranges from 25 degrees to 35 degrees, such as 27 degrees, 29 degrees, 30 degrees, 32 degrees or 34 degrees; the characteristic impedance of the seventh microstrip line ranges from 48 ohms to 52 ohms, such as 49 ohms, 50 ohms or 51 ohms.

[0080] In one embodiment, the characteristic impedance of the first microstrip line ranges from 50 ohms to 100 ohms.

[0081] Specifically, the characteristic impedance of the first microstrip line may be 75 ohms, 79 ohms, 85 ohms, 90 ohms, 95 ohms or 99 ohms, etc.

[0082] In one embodiment, the electrical length of the first microstrip line ranges from 85 degrees to 95 degrees.

[0083] Specifically, the electrical length of the first microstrip line can be 87 degrees, 89 degrees, 91 degrees or 93 degrees, etc. Based on the above structure, the RF impedance of the first microstrip line from the first end to the second end can be greater than 300 ohms. It should be noted that the value of the electrical length of the first microstrip line can be fine-tuned on the basis of a quarter wavelength to obtain a better high impedance state.

[0084] In one embodiment, Figure 3 As shown, the high-power uplink and downlink switching device mainly includes: a first radio frequency switch S1, a second radio frequency switch S2, a radio frequency switching switch S3, microstrip lines Z1 (second microstrip line), Z2 (seventh microstrip line), Z3 (third microstrip line), Z4 (sixth microstrip line), Z5 (fourth microstrip line), Z6 (first microstrip line) and Z7 (fifth microstrip line), a power amplifier module P1, a circulator, a low noise amplifier module P2, a synchronization unit, a level inverter and a load resistor R1, etc. Among them, Z1, Z2, Z3, Z4, Z5, and Z6 are 50-ohm microstrip lines, the electrical length of Z6 is a quarter wavelength of the operating frequency, and the characteristic impedance can be selected according to the high resistance and power capacity design requirements, and generally 50 ohms to 100 ohms can be selected. That is, it is necessary to ensure that after the RF switches S1 and S2 are closed, the RF impedance changes from 0 ohms to high impedance after passing through the quarter-wavelength line, so that the uplink signal completely passes through the first RF switch S1 and enters the uplink, and at the same time ensure that after the RF switches S1 and S2 are disconnected, the reflected RF signal from the second RF port is completely absorbed by the load resistor R1 without affecting the uplink. Based on this, the entire switching device does not use a high-power RF switch, thus solving the bottleneck of the current industry's lack of high-power RF switches.

[0085] Based on the above structure, the implementation process of the high-power TDD uplink and downlink switching device may include:

[0086] 1) The synchronization unit generates and provides a control signal 1 to control the power amplifier module P1, the second RF switch S2 and the RF switching switch S3.

[0087] 2) The synchronization signal provides a control signal 2 through a level inverter to control the low noise amplifier module P2 and the first RF switch S1.

[0088] 3) When the control signal 1 is at a high level (the control signal 2 is at a low level), S1 is set to be disconnected, S2 is set to be disconnected, and S3 is set to be downstream-on, the power amplifier module P1 is turned on, and the low noise amplifier module P2 is turned off; the RF signal enters from TXin, passes through the RF switching switch S3 and the microstrip line Z1, enters the power amplifier module P1 for power amplification, and then enters the circulator through the microstrip line Z3; further, the forward signal reaches the Txout port output after passing through the microstrip line Z5, and the reverse signal enters the high-power load resistor R1 after passing through the microstrip lines Z7 and Z6.

[0089] 4) When control signal 2 is at a high level (control signal 1 is at a low level), S1 is set to be closed, S2 is set to be closed, S3 is set to be uplink on, the low noise amplifier module P2 is turned on, and the power amplifier module P1 is turned off; the RF signal enters from RXin, passes through the circulator and the microstrip line Z7, enters the first RF switch S1, and then enters the low noise amplifier module P2 through the microstrip line Z4; after the low noise amplifier module amplifies the RF signal, it reaches the RXout port for output after passing through the microstrip line Z2 and the RF switching switch S3.

[0090] In one embodiment, corresponding device components may be selected according to actual frequency requirements.

[0091] In one example, a 2.6 GHz high-power uplink and downlink integrated active device is provided, such as Figure 4As shown, it includes: RF switches S1, S2 and S3 (model PE4251), synchronization unit, 2.6GHz power amplifier module, 2.6GHz low noise amplifier module, 2.6GHz circulator and voltage inverter (model NC7WZ1P6X), etc. One output port of RF switch S3 (PE4251) is connected to the input end of 2.6HGz power amplifier module through microstrip line Z1, and the other output port is connected to the output end of 2.6GHz low noise amplifier module through microstrip line Z2; the output end of 2.6GHz power amplifier module is connected to the first port of 2.6GHz circulator through microstrip line Z3; the second port of 2.6GHz circulator is connected to TXout (RXin) port through microstrip line Z5; the third port of 2.6GHz circulator is connected to the input end of RF switch S1 and the first end of microstrip line Z6 through microstrip line Z7. The microstrip line Z6 is connected to the load resistor R1 through the first end of the RF switch S2; the output end of the RF switch S1 is connected to the input end of the 2.6GHz low noise amplifier module through the microstrip line Z4. Among them, the characteristic impedance of the microstrip lines Z1, Z2, Z3, Z4, Z5, and Z7 is 50 ohms, and the electrical length can be selected as 30 degrees according to the requirements of the circuit board layout. The principle of selecting the characteristic impedance and electrical length of the microstrip line Z6 is: from the connection point between the RF switch S1 and the microstrip line Z6 to the other end of the microstrip line Z6, the RF impedance is in a high impedance state (such as greater than 300 ohms), so that no RF power leaks to the load resistor R1 when the uplink is turned on. For example, the characteristic impedance of Z6 is 80 ohms and the electrical length is 89 degrees.

[0092] Based on the above structure, the steps for implementing the 2.6GHz high-power uplink and downlink switching device can be as follows:

[0093] 1) The synchronization unit processes the coupled signal from the RF input end (TXin / RXout) and generates a synchronization signal for controlling the switching of the uplink and downlink links; the synchronization signal output by the synchronization unit is determined as control signal 1, and control signal 1 outputs control signal 2 after passing through the voltage inverter NC7WZ146X.

[0094] 2) When control signal 1 is high (control signal 2 is low), RF switch S1 (PE4251) is set to disconnect, S2 (PE4251) is set to disconnect, S3 (PE4251) is set to downstream conduction, power amplifier module P1 is turned on, and low noise amplifier module P2 is turned off. The RF signal enters from TXin, passes through RF switch S3 (PE4251) and microstrip line Z1, enters the 2.6GHz power amplifier module P1, and enters the 2.6GHz circulator through microstrip line Z3 after power amplification; the forward signal reaches the Txout port output after passing through microstrip line Z5, and the reverse signal enters the high-power load resistor R1 after passing through microstrip lines Z7 and Z6.

[0095] 3) When control signal 2 is high (control signal 1 is low), RF switch S1 (PE4251) is set to closed, S2 (PE4251) is set to closed, S3 (PE4251) is set to uplink conduction, low noise amplifier module P2 is turned on, and power amplifier module P1 is turned off. The RF signal enters from RXin, passes through the 2.6GHz circulator and microstrip line Z7, enters the RF switch S1 (PE4251), then enters the 2.6GHz low noise amplifier module through the microstrip line Z4, and then reaches the RXout port output through the microstrip line Z2 and RF switch S3 (PE4251).

[0096] In one embodiment, a communication device is provided, including the high-power uplink and downlink switching device as described above.

[0097] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0098] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A high-power uplink and downlink switching device, characterized in that: include: A radio frequency switching switch; the common end of the radio frequency switching switch is used to connect to the first radio frequency port; Power amplifier module; The input end of the power amplifier module is connected to the downstream end of the radio frequency switch; circulator; the first port of the circulator is connected to the output end of the power amplifier module, and the second port is used to connect to the second radio frequency port; a first radio frequency switch; a first end of the first radio frequency switch connected to the third port of the circulator; A low noise amplifier module; the input end of the low noise amplifier module is connected to the second end of the first RF switch; the output end of the low noise amplifier module is connected to the uplink end of the RF switching switch; a first microstrip line; a first end of the first microstrip line is connected to a third port of the circulator; wherein, in the first microstrip line, the radio frequency impedance from the first end to the second end is in a high impedance state; a load resistor, wherein a first end of the load resistor is connected to a second end of the first microstrip line, and a second end of the load resistor is grounded; a second radio frequency switch; a first end of the second radio frequency switch is connected to the second end of the first microstrip line, and a second end of the second radio frequency switch is grounded; A synchronization control module; the input end of the synchronization control module is used to connect the first RF port; the output end of the synchronization control module is respectively connected to the control end of the RF switching switch, the control end of the first RF switch and the control end of the second RF switch; a fifth microstrip line, wherein the third port of the circulator is respectively connected to the first end of the first radio frequency switch and the first end of the first microstrip line through the fifth microstrip line; The transmission process of the downlink signal is as follows: the first RF port obtains the downlink signal, and the synchronization control module controls the RF switching switch to turn on the downlink end and controls the first RF switch and the second RF switch to be disconnected based on the first synchronization signal; the first RF port transmits the downlink signal to the power amplifier module through the RF switching switch; the power amplifier module amplifies the downlink signal, and transmits the amplified downlink signal to the first port of the circulator, and then outputs it from the second port of the circulator to the second RF port; the reflected RF signal generated during the transmission of the downlink signal reaches the load resistor through the third port of the circulator and the first microstrip line in turn.

2. The high-power uplink and downlink switching device according to claim 1, characterized in that: The output end of the synchronous control module is also connected to the control end of the power amplifier module and the control end of the low noise amplifier module respectively.

3. The high-power uplink and downlink switching device according to claim 2, characterized in that: The synchronization control module includes a synchronization unit and a level inverter; The input end of the synchronization unit is used to connect to the first RF port, and the output end of the synchronization unit is respectively connected to the input end of the level inverter, the control end of the RF switch, the control end of the power amplifier module and the control end of the second RF switch; The output end of the level inverter is connected to the control end of the low noise amplifier module and the control end of the first RF switch respectively.

4. The high-power uplink and downlink switching device according to claim 1, characterized in that: Also included is a coupler connected between the first RF port and the synchronization control module; The input end of the coupler is used to connect to the first RF port, and the coupling end is connected to the input end of the synchronization control module.

5. The high-power uplink and downlink switching device according to claim 1, characterized in that: Also includes a second microstrip line, a third microstrip line, a fourth microstrip line, a sixth microstrip line and a seventh microstrip line; The downstream end of the radio frequency switch is connected to the input end of the power amplifier module through the second microstrip line; The output end of the power amplification module is connected to the first port of the circulator through the third microstrip line; The second port of the circulator is connected to the second RF port via the fourth microstrip line; The second end of the first RF switch is connected to the input end of the low noise amplifier module through the sixth microstrip line; The output end of the low noise amplifier module is connected to the upstream end of the radio frequency switch through the seventh microstrip line.

6. The high-power uplink and downlink switching device according to claim 5, characterized in that: The electrical lengths of the second microstrip line, the third microstrip line, the fourth microstrip line, the fifth microstrip line, the sixth microstrip line and the seventh microstrip line all range from 10 degrees to 180 degrees.

7. The high-power uplink and downlink switching device according to claim 5, characterized in that: The characteristic impedances of the second microstrip line, the third microstrip line, the fourth microstrip line, the fifth microstrip line, the sixth microstrip line and the seventh microstrip line are all in the range of 48 ohms to 52 ohms.

8. The high-power uplink and downlink switching device according to any one of claims 1 to 7, characterized in that: The characteristic impedance of the first microstrip line ranges from 50 ohms to 100 ohms.

9. The high-power uplink and downlink switching device according to any one of claims 1 to 7, characterized in that: The electrical length of the first microstrip line ranges from 85 degrees to 95 degrees.

10. A communication device, characterized in that: It comprises a high-power uplink and downlink switching device as described in any one of claims 1 to 9.

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