Component assembly method and device

Abstract

The present invention discloses a component assembly method and device, the method comprising: soaking the pins of the component with solder flux to eliminate the metal oxide film on the pins of the component; attaching a layer of molten first low-melting-point metal on the pins of the component; mounting the component on a specified position of a substrate, so that the first low-melting-point metal on the pins of the component is fused and connected with a conductive circuit formed by laying a molten second low-melting-point metal on the surface of the substrate, thereby stabilizing the component. The present invention uses solder flux to eliminate the metal oxide on the surface of the pins of the component, and uses a low-melting-point metal of the same nature as the conductive circuit as a conductive connecting agent, so that the pins of the component and the conductive circuit can be well fused, eliminating the problem of unstable wiring structure.

Description

Technical Field

[0001] The present invention belongs to the technical field of electronic circuit additive manufacturing, and in particular relates to a component assembly method and device. Background Art

[0002] Liquid metal (also known as low-melting-point metal) is a new type of material for additive manufacturing technology. Because its melting point is far lower than that of traditional manufacturing metal materials such as copper, aluminum, and silver, the complexity of the production equipment, energy consumption, safety and environmental protection facilities are greatly simplified, providing a basis for on-site rapid manufacturing of electronic circuits.

[0003] At present, in order to meet the flexibility requirements of electronic circuits, low-melting-point metals that are molten at room temperature, such as gallium alone, gallium-indium alloys, gallium-indium-tin alloys, etc., can be used to lay molten conductive lines on the surface of the substrate. The adhesion and thickness of the low-melting-point metal on the surface of the substrate can be controlled to reduce the fluidity of the low-melting-point metal on the surface of the substrate to a certain extent. In addition, since low-melting-point metals are easily oxidized in the air, the formation of an oxide film will also limit the flow of the low-melting-point metal to a certain extent.

[0004] However, for component mounting, the pins of the components are mainly made of tin-clad copper, that is, the outer side of the pins is mainly tin and tin oxide (caused by oxidation reaction in the air). During mounting, the affinity and wetting effect between the tin oxide of the pins and the oxide film on the surface of the low-melting-point metal is extremely poor, and a stable connection cannot be formed. Figure 1 As shown, when the molten low-melting-point metal is subsequently packaged, the packaging glue can easily penetrate into the connection between the component pins and the conductive circuit through the gaps, causing component warping and displacement, thereby causing the electrical connection between the two to fail. Summary of the invention

[0005] In view of this, an object of the present invention is to provide a component assembly method to solve the problem of loose and unstable connection between component pins and low-melting-point metal conductive circuits in the prior art.

[0006] In some illustrative embodiments, the component assembly method includes: soaking the pins of the component with flux to eliminate the metal oxide film on the pins of the component; attaching a layer of molten first low-melting-point metal to the pins of the component; mounting the component on a specified position of a substrate so that the first low-melting-point metal on the pins of the component is fused and connected with a conductive path formed by laying a molten second low-melting-point metal on the surface of the substrate, thereby stabilizing the component.

[0007] In some optional embodiments, the first low-melting-point metal contains components that are the same as one or more metal elements in the pins of the component, and is attached to the pins of the component through a wetting phenomenon.

[0008] In some optional embodiments, the component pins are tin-clad copper; the first low-melting-point metal is a tin-based alloy with a melting point below 300°C; and the second low-melting-point metal is a gallium-based alloy with a melting point below 300°C.

[0009] In some optional embodiments, the flux contains components that are the same as one or more metal elements in the component pins; the process of attaching a layer of molten first low-melting-point metal to the component pins includes: the first low-melting-point metal and the metal component in the flux produce a third low-melting-point metal containing the metal component through a substitution reaction and an alloy reaction; the third low-melting-point metal is attached to the pins of the component through a wetting phenomenon.

[0010] In some optional embodiments, the component pins are tin-clad copper; and the soldering flux contains free tin ions.

[0011] In some optional embodiments, the second low-melting-point metal in the conductive circuit wraps around the component pin to a certain extent through free diffusion of concentration.

[0012] In some optional embodiments, the first low-melting-point metal and the second low-melting-point metal are fused and connected through an alloying reaction.

[0013] In some optional embodiments, the second low-melting-point metal is in a molten state at room temperature.

[0014] In some optional embodiments, the component assembly method further includes: before mounting the component, removing excess soldering flux on the component using an organic solvent.

[0015] In some optional embodiments, the organic solvent may be a volatile substance such as alcohol; after removing excess soldering flux on the component by using the organic solvent and before mounting the component, the method further includes: removing residual alcohol by heat baking.

[0016] In some optional embodiments, after mounting the component on a specified position of the substrate and fusing and connecting the first low-melting-point metal on the component pin with the conductive circuit formed by laying the molten second low-melting-point metal on the surface of the substrate, it also includes: using a fourth low-melting-point metal to wrap the connection between the component pin and the conductive circuit to stabilize the connection between the component pin and the conductive circuit; wherein the fourth low-melting-point metal is a viscous metal mixture formed by mixing the second low-melting-point metal and high-melting-point metal particles.

[0017] The present invention also discloses a component assembly device, which can be used to execute the component assembly method to solve the technical problems existing in the prior art.

[0018] In some illustrative embodiments, the component assembly device includes: a patch nozzle, a circular pillar that drives the patch nozzle to rotate around itself, and a beam support that connects the patch nozzle and the circular pillar and moves vertically on the circular pillar; at least two reservoirs for respectively containing flux and low-melting-point metal, as well as a reserved patch area, are arranged on the periphery of the circular pillar.

[0019] In some optional embodiments, the reservoir further comprises a reservoir for containing alcohol.

[0020] In some optional embodiments, a heat drying area is reserved on the periphery of the circular pillar for evaporating alcohol and / or flux.

[0021] In some optional embodiments, the component assembly device performs mounting at a designated position in the following manner: the mounting nozzle picks up the component and immerses it in a reservoir of flux, low-melting-point metal, and alcohol for a period of time in turn, then bakes it in a hot baking area for a period of time, and finally mounts it at a designated position on the substrate.

[0022] In some optional embodiments, the low melting point metal contains components that are the same as one or more metal elements in the component pins.

[0023] In some optional embodiments, the low melting point metal contains metallic tin element.

[0024] In some optional embodiments, the soldering flux contains components that are the same as one or more metal elements in the component pins.

[0025] In some optional embodiments, the soldering flux contains tin ions.

[0026] In some optional embodiments, the soldering flux also includes an organic acid.

[0027] In some optional embodiments, the solvent in the soldering flux is alcohol.

[0028] Compared with the prior art, the present invention has the following advantages:

[0029] 1. By using flux to eliminate metal oxides on the surface of component pins and using low-melting-point metals of the same nature as the conductive circuit as a conductive connector, the component pins and the conductive circuit can be well integrated, eliminating the problem of unstable wiring structure.

[0030] 2. By adding tin ions to the flux, a substitution reduction reaction can be produced with the metallic gallium in the low-melting-point metal, thereby obtaining free tin in the low-melting-point metal. The tin can once again react with the metallic gallium to produce an alloy, thereby obtaining a gallium-tin-based alloy with better wettability with the pin (tin), which is not easy to separate from the pin.

[0031] 3. During patching, the concentration of gallium indium in the newly generated gallium indium tin alloy at the component pin is lower than that of the liquid metal in the pad. Therefore, the gallium indium alloy in the pad will have a tendency to fuse to the metal on the pin due to the diffusion of the fluid concentration. The macroscopic phenomenon is the spontaneous attachment of the metal to the pin. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 It is a schematic diagram of the mounting effect of components on a substrate in the prior art;

[0033] Figure 2 is a flow chart of a method in an embodiment of the present invention;

[0034] Figure 3 It is a schematic diagram of the mounting effect of a component on a substrate after the method of the present invention is implemented;

[0035] Figure 4 is a schematic top view of a device in an embodiment of the present invention. DETAILED DESCRIPTION

[0036] The following description and the accompanying drawings fully illustrate specific embodiments of the present invention so that those skilled in the art can practice them. Other embodiments may include structural, logical, electrical, process and other changes. The examples represent possible variations only. Unless explicitly required, separate components and functions are optional, and the order of operation may vary. Parts and features of some embodiments may be included in or replace parts and features of other embodiments. The scope of the embodiments of the present invention includes the entire scope of the claims, and all available equivalents of the claims. In this article, these embodiments of the present invention may be represented individually or collectively by the term "invention", which is merely for convenience, and if more than one invention is disclosed in fact, it is not intended to automatically limit the scope of the application to any single invention or inventive concept.

[0037] Now refer to Figure 2 , Figure 2 A flow chart of a method for assembling components in an embodiment of the present invention is shown. As shown in the flow chart, the present invention discloses a component assembly method, including:

[0038] Step S11, soaking the pins of the component with flux to remove the metal oxide film on the pins of the component;

[0039] The soldering flux may be a soldering liquid or a soldering paste, and its main function is to remove the metal oxide film formed on the component pins due to long-term exposure to the air. Preferably, the component pins are mainly tin-clad copper, and the metal oxide film formed is mainly tin oxide. In other cases, copper oxide may also exist. Therefore, organic acid can be used as a soldering flux or a soldering flux containing organic acid. The organic salt and water obtained by the reaction can be easily removed, and the residual organic acid can be eliminated by natural evaporation or thermal baking.

[0040] Step S12, attaching a layer of molten first low-melting-point metal to the component pin;

[0041] In this step, the first low-melting-point metal can be attached by spraying, electroplating, infiltration, sputtering and other methods. Preferably, the infiltration method can be used in the embodiment of the present invention, which is more suitable for the actual needs of small components.

[0042] Step S13, mounting the component on a designated position of the substrate, so that the first low-melting-point metal on the component pin is fused and connected with the conductive path formed by laying the second low-melting-point metal in a molten state on the surface of the substrate, thereby stabilizing the component.

[0043] In this step, since the first low melting point metal and the second low melting point metal are both in a molten state when the component is mounted, they can fuse with each other, thereby eliminating the gap that may be generated between the component pins and the conductive circuit, which affects the reliability of subsequent preparation.

[0044] In this embodiment, the first low melting point metal and the second low melting point metal may be low melting point metals of the same composition, thereby achieving a good fusion effect. In other embodiments, the first low melting point metal and the second low melting point metal may also be composed of different compositions, and a good fusion effect is achieved through an alloy reaction between the two low melting point metals.

[0045] Some low melting point metals in the embodiments of the present invention may be low melting point metals whose melting point range is not higher than 300°C, and the low melting point metals on the pins of the components and the low melting point metals on the substrate may be molten by simple heating. The low melting point metal may be a metal element, a metal alloy or a metal mixture with a melting point within this range, and the metal mixture refers to a metal formed by mixing one or more metals in a metal element and a metal alloy.

[0046] Preferably, the melting point range of some low melting point metals is not higher than 100° C., and specific examples include 12±2° C., 17±2° C., 29±2° C., 50±2° C., 65±2° C., 75±2° C., 80±2° C., and 98±2° C. Details are omitted here.

[0047] Furthermore, the melting point of the low melting point metal is not higher than 50°C, for example, a low melting point metal that is molten at room temperature. Preferably, the low melting point metal can be selected from metal single substances / alloys that meet the melting point between 0°C and 30°C. Furthermore, the low melting point metal uses gallium single substance, gallium-based alloy (such as low eutectic gallium-indium alloy and low eutectic gallium-indium-tin alloy), such metals are still molten at room temperature (room temperature) and have good fluidity, that is, low melting point metals that are liquid at room temperature.

[0048] The choice of melting point is based on the actual application environment of the circuit. For example, if a flexible circuit is required, a low melting point metal that is molten at room temperature can be selected. If the circuit structure stability is required, a metal with a melting point above room temperature can be selected.

[0049] Furthermore, the melting point of a single metal is generally considered to be fixed, but there may be large differences in the melting points of metal alloys. For example, according to the alloy phase diagram, as the gallium content decreases from 100% to 0% and the indium content increases from 0% to 100%, the alloy melting point gradually decreases from 29°C until it reaches the eutectic point of the gallium-indium alloy. At this time, the melting point of the gallium-indium alloy is the lowest (about 15°C), and the ratio of the gallium-indium alloy is 79.6 gallium and 21.4 indium. After that, the melting point of the gallium-indium alloy gradually approaches the melting point of indium, and can eventually reach about 158°C. Therefore, the specific melting point requirements and metal components used for certain low-melting-point metals in the embodiments of the present invention can be referenced according to the phase diagram of the metal alloy.

[0050] Preferably, in the embodiment of the present invention, the first low melting point metal can be selected from low melting point metals with a melting point below 300°C, and the second low melting point metal can be selected from low melting point metals with a melting point below 100°C. Preferably, the second low melting point metal can be selected from low melting point metals with a melting point below 50°C. The specific selection range is between 10°C and 30°C.

[0051] In some embodiments, the first low-melting-point metal contains the same components as one or more metal elements in the pins of the component, and is attached to the pins of the component through the wetting phenomenon. For example, for tin-clad copper pins, a tin-based alloy can be used. The tin-based alloy has an affinity for the pins and can be stably attached to the pins through the wetting phenomenon and is not easy to fall off. Preferably, the tin-based alloy may also contain metal elements such as bismuth and lead, such as tin-bismuth alloy, tin-lead alloy, etc.

[0052] Preferably, Figure 1In the embodiment shown, the first low melting point metal can be a tin-based alloy, and the second low melting point metal laid on the surface of the substrate to form a conductive circuit can be a gallium-based alloy. Gallium and tin can spontaneously produce an alloy reaction in a molten state to obtain a gallium-tin-based alloy. For components and conductive circuits, the gallium-tin-based alloy generated at the connection can be well fused with tin-based alloys and gallium-based alloys. Among them, the first low melting point metal and the second low melting point metal can use the same gallium-tin-based alloy, and at this time, they can be well fused without further alloy reaction. In some embodiments, the gallium-based alloy selected by the second low melting point metal may also contain metal elements such as bismuth and lead.

[0053] In a specific embodiment, the first low melting point metal can be a bismuth indium tin alloy with a melting point of 58°C, which is solid at room temperature. When the component pins are attached, the bismuth indium tin alloy can be melted in an environment of 200°C, and then the component soaked with flux (mainly solder paste as an example) is placed in it. At this time, the ambient temperature can meet the requirements of the solder paste to eliminate the metal oxide film on the component pins, and at the same time, a layer of molten bismuth indium tin alloy is attached to the pins that have eliminated the metal oxide film. After taking it out, the component needs to be quickly mounted on the substrate to avoid the bismuth indium tin alloy from solidifying quickly in the air, which to a certain extent affects the fusion effect with the second low melting point metal in the conductive circuit. Among them, the second low melting point metal can be a low eutectic gallium indium alloy, which can form a gallium indium bismuth tin alloy.

[0054] In some embodiments, the flux used contains components that are the same as one or more metal elements in the component pins; and the components can meet the requirements of producing an alloy reaction with the low-melting-point metal. At this time, there is no need to consider the affinity of the first low-melting-point metal and the second low-melting-point metal with the component pins.

[0055] Therefore, preferably, in the process of attaching a layer of molten first low-melting-point metal to the pin of the component, the first low-melting-point metal and the metal component in the flux produce a third low-melting-point metal containing the metal component through substitution reaction and alloy reaction; the third low-melting-point metal is attached to the pin of the component through wetting. In this embodiment, the first low-melting-point metal and the second low-melting-point metal can be selected to have the same composition.

[0056] In a specific embodiment, the soldering flux may further include tin ions. First, the tin ions may undergo a replacement reaction with a metal element / metal alloy that is more active than the tin ions in the low melting point metal, such as gallium, indium, sodium, potassium, etc. Thus, the tin element (molten state / free state) dissolved in the low melting point metal may be extracted from the soldering flux. The first low melting point metal may be a gallium-indium alloy, so that the tin element may spontaneously react with the gallium-indium alloy to produce an alloy such as a gallium-tin alloy, a gallium-indium-tin alloy, an indium-tin alloy, etc. The tin ions may be obtained from any soluble tin salt, such as tin chloride.

[0057] The substitution and alloy reaction between the gallium-indium alloy and tin in this embodiment causes the gallium-indium content on the component pins to decrease. At this time, the concentration of the gallium-indium alloy in the conductive circuit is higher than that of the gallium-indium on the pins. Therefore, the second low-melting-point metal in the conductive circuit will wrap around the component pins to a certain extent through free diffusion of concentration.

[0058] Specifically, the concentration of gallium indium in the newly generated gallium indium tin alloy at the pin of the component is lower than the concentration of gallium indium in the liquid metal in the conductive circuit on the substrate. Therefore, the gallium indium alloy in the conductive circuit will tend to fuse to the metal on the pin due to the diffusion of the fluid. The macroscopic phenomenon is that the metal spontaneously climbs onto the pin to form a phenomenon of covering / wrapping the component pin, achieving Figure 3 The effect shown.

[0059] In some embodiments, the flux that wets the pins of the component can be wetted by the flux by placing the component in the flux, and the above-mentioned reaction occurs with the flux. In the actual process, by placing the component in the flux to wet the pins of the component, the content of tin ions attached to the surface of the component will be large, which will lead to the extraction of more than expected low-melting-point metal in the conductive circuit after the component is mounted, causing deformation, short circuit and other problems of the conductive circuit. Therefore, the inventor has repeatedly verified that before mounting the component, alcohol can be used to remove excess flux on the component, for example, after taking out the component immersed in the low-melting-point metal, it is immersed in the alcohol solution again, thereby eliminating the flux on the component pins exposed outside the low-melting-point metal. And after using an organic solvent to remove excess flux on the component, before mounting the component, it also includes: eliminating residual alcohol by heat baking.

[0060] In some embodiments, in order to strengthen the stability of the component on the substrate and between the component pin and the conductive circuit, the connection between the component pin and the conductive circuit can be wrapped in the following manner, involving a slurry for wrapping the connection between the component pin and the conductive circuit, which can be called a fourth low-melting-point metal, which is produced by mixing the second low-melting-point metal with high-melting-point metal particles and is in a viscous state. Preferably, the high-melting-point metal can be copper powder, silver-coated copper powder, silver powder and other metal particles with good conductivity.

[0061] Specifically, after mounting the component on a designated position of the substrate and fusing and connecting the first low-melting-point metal on the component pin with the conductive circuit formed by laying the molten second low-melting-point metal on the surface of the substrate, it also includes: using a fourth low-melting-point metal to wrap the connection between the component pin and the conductive circuit to stabilize the connection between the component pin and the conductive circuit; wherein the fourth low-melting-point metal is a viscous metal mixture formed by mixing the second low-melting-point metal and high-melting-point metal particles.

[0062] In order to enable those skilled in the art to more quickly understand the embodiments of the present invention, the present invention further proposes a preferred embodiment for the above invention.

[0063] The following participants are involved in this embodiment:

[0064] A printed substrate is provided with a conductive circuit composed of a low melting point metal, wherein the low melting point metal is a low eutectic gallium-indium alloy with a melting point of about 15°C;

[0065] A reservoir containing flux, the solutes are organic acid and tin chloride, and the solvent is alcohol;

[0066] A reservoir containing a low eutectic gallium-indium alloy; the reservoir maintains the temperature of the gallium-indium alloy at 80°C (generally, the temperature of the reservoir should be at least 5°C higher than the melting point of the low melting point metal, so that the low melting point metal can be in a good molten state in the reservoir. When it is higher than 5°C, the requirements for the degree of material reaction should be met. In the present invention, it is required that the tin ions in the flux produce a sufficient and complete replacement reaction with the low melting point metal. After multiple tests and verifications, it is found that when the immersion time is within 2-5 seconds, the reaction temperature needs to reach at least 70°C)

[0067] A reservoir containing alcohol;

[0068] Step a. Place the entire component in the flux for 2-5 seconds and then remove it;

[0069] Step b. Place the component in the gallium-indium alloy for 2-5 seconds and then take it out. The reaction environment temperature of 80° C. and the reaction time of 2-5 seconds are not enough for the reaction to be complete, and a small amount of substitution product tin remains;

[0070] Step c. Place the entire component in alcohol for 2-5 seconds and then take it out to remove excess flux on the surface of the component;

[0071] During the dipping process, avoid large-scale shaking and bumping to prevent the low-melting-point metal from falling off the component pins.

[0072] Step d. heating the element to remove residual alcohol;

[0073] Step e. mounting the component on the printed substrate so that its pins are aligned with the designated conductive circuit;

[0074] At this time, the low-melting-point metal attached to the surface of the pin fuses with the conductive circuit, and the low-melting-point metal in the circuit is pulled along the pin from bottom to top through the remaining tin to continue the alloying reaction, forming a pin-wrapping effect.

[0075] Now refer to Figure 4 , Figure 4 A structural block diagram of an apparatus for assembling components in an embodiment of the present invention is shown. As shown in the structural block diagram, the present invention discloses an apparatus for assembling components, comprising: a circular pillar 1; at least two fan-shaped reservoirs 2, 3 surrounding the periphery of the circular pillar 1, and a patch area 4, wherein the at least two fan-shaped reservoirs are used to respectively contain flux and low-melting-point metal; a beam support 5 fixed to the circular pillar 1 by a vertical lifting component, and a patch nozzle 6 arranged on one end of the beam support 5 away from the circular pillar 1; the patch nozzle 6 selects a corresponding reservoir or patch area through the coordinated rotation of the circular pillar 1 and the fan-shaped reservoirs 2, 3, and performs dipping or patching through the lifting of the vertical lifting component.

[0076] On the basis of the above embodiment, the at least two fan-shaped reservoirs include three, the first fan-shaped reservoir 2 is used to hold flux, the second fan-shaped reservoir 3 is used to hold low melting point metals, and the third fan-shaped reservoir 7 is used to hold alcohol.

[0077] On the basis of the above embodiment, it may further include: a drying area 8 surrounding the periphery of the circular pillar 1, for evaporating alcohol attached to the surface of the component.

[0078] The component assembly device in the embodiment of the present invention can perform mounting at a designated position in the following manner: the mounting nozzle picks up the component and immerses it in the reservoirs of flux, low-melting-point metal, and alcohol for a period of time, then bakes it in a hot baking area for a period of time, and finally mounts it at a designated position on the substrate.

[0079] The device can be used to execute the method for assembling components in the embodiment of the present invention to realize the function of automatic patch.

[0080] Those skilled in the art will also appreciate that the various illustrative logic blocks, modules, circuits, and algorithmic steps described in conjunction with the embodiments herein can all be implemented as electronic hardware, computer software, or a combination thereof. In order to clearly illustrate the interchangeability between hardware and software, various illustrative components, blocks, modules, circuits, and steps are generally described above around their functions. Whether such functions are implemented as hardware or software depends on specific applications and the design constraints imposed on the entire system. A skilled person can implement the described functions in an alternative manner for each specific application, but such implementation decisions should not be interpreted as departing from the scope of protection of the present disclosure.

Claims

1. A component assembly method, characterized in that: include: Wetting the pins of the components with flux to remove the metal oxide film on the pins of the components; Adhere a layer of molten first low-melting-point metal on the component pin; Mounting the component on a designated position of the substrate, so that the first low-melting-point metal on the pin of the component is fused and connected with the conductive path formed by laying the second low-melting-point metal in a molten state on the surface of the substrate, thereby stabilizing the component; The first low melting point metal contains the same components as one or more metal elements in the pins of the component, and is attached to the pins of the component by wetting; The component pins are tin-clad copper; The first low melting point metal is a tin-based alloy having a melting point below 300° C.; The second low melting point metal is a gallium-based alloy having a melting point below 300° C.; The soldering flux contains the same components as one or more metal elements in the component pins; The process of attaching a layer of molten first low-melting-point metal to the component pin includes: The first low-melting-point metal and the metal component in the soldering flux generate a third low-melting-point metal containing the metal component through a substitution reaction and an alloy reaction; The third low melting point metal is attached to the pins of the component by wetting; The component pins are tin-clad copper; the soldering flux contains free tin ions; The second low melting point metal in the conductive circuit forms a certain degree of wrapping around the component pins through free diffusion of concentration; The first low-melting-point metal and the second low-melting-point metal are fused and connected through an alloying reaction.

2. The component assembly method according to claim 1, characterized in that: The second low melting point metal is in a molten state at room temperature.

3. The component assembly method according to claim 1, characterized in that: After mounting the component on a designated position of the substrate, so that the first low-melting-point metal on the pin of the component is fused and connected with the conductive path formed by laying the second low-melting-point metal in a molten state on the surface of the substrate, the method further includes: Using a fourth low melting point metal to perform a pin-wrapping process on the connection between the component pin and the conductive circuit to stabilize the connection between the component pin and the conductive circuit; The fourth low melting point metal is a viscous metal mixture formed by mixing the second low melting point metal with high melting point metal particles.

4. A component assembly device, characterized in that: include: A patch nozzle, a circular support that drives the patch nozzle to rotate around itself, and a beam support that connects the patch nozzle and the circular support and moves vertically on the circular support; The periphery of the circular pillar is provided with at least two reservoirs for containing solder flux and low melting point metal respectively, and a reserved patch area; The component assembly device can be used to execute the component assembly method described in any one of claims 1 to 3.

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