Organic light emitting display device and manufacturing method thereof

Abstract

An organic light-emitting display device and a manufacturing method thereof are provided. The organic light-emitting display device may include: a base substrate including an emission region at which light is emitted and a peripheral region adjacent to the emission region; an encapsulation substrate disposed on the base substrate; a common layer between the base substrate and the encapsulation substrate, the common layer being disposed in both the emission region and the peripheral region; a planarization layer, a pixel electrode in the emission region, and a pixel defining layer, each of which is disposed between the base substrate and the common layer; and a discharge hole disposed corresponding to the pixel defining layer, the discharge hole extending through the common layer.

Description

Technical Field

[0001] Embodiments relate to a display device, and more particularly, to an organic light emitting display device and a method for manufacturing the organic light emitting display device. Background Art

[0002] The organic light emitting display device may have an organic light emitting diode including a hole injection layer, an electron injection layer, and an organic light emitting layer formed therebetween. In the organic light emitting display device, light may be generated as an exciton drops from an excited state to a ground state, and the exciton is a combination of a hole injected from the hole injection layer and an electron injected from the electron injection layer. The organic light emitting display device does not include a separate light source for generating light, so the organic light emitting display device may have a relatively small thickness and light weight as well as relatively low power consumption. In addition, the organic light emitting display device may have a relatively wide viewing angle, a high contrast ratio, a high response speed, and the like.

[0003] The organic light emitting display device may include a planarization layer, a pixel defining layer, and a spacer. The planarization layer may protect a thin film transistor for driving an organic light emitting diode and may provide a planarized surface thereon. The pixel defining layer may be disposed on the planarization layer to separate pixels from each other. The spacer may be disposed on the pixel defining layer to protect the organic light emitting diode from the impact of the encapsulation substrate. Each of the planarization layer, the pixel defining layer, and the spacer may include an organic layer containing an organic material. Summary of the invention

[0004] The embodiment provides an organic light emitting display device in which shrinkage of pixels due to gas discharged from an organic layer including an organic material is reduced or effectively prevented.

[0005] Embodiments provide a method of manufacturing an organic light emitting display device for reducing or effectively preventing shrinkage of pixels of the organic light emitting display device due to gas discharged from an organic layer including an organic material.

[0006] An organic light-emitting display device includes: a base substrate, including an emission area at which light is emitted and a peripheral area adjacent to the emission area; an encapsulation substrate, disposed on the base substrate; a common layer, located between the base substrate and the encapsulation substrate, the common layer being disposed in both the emission area and the peripheral area; a planarization layer, a pixel electrode in the emission area, and a pixel defining layer, each of which is located between the base substrate and the common layer; and a discharge hole, disposed corresponding to the pixel defining layer, the discharge hole extending through the common layer.

[0007] In an embodiment, the organic light emitting display device may further include: a spacer disposed between the pixel defining layer and the common layer.

[0008] In an embodiment, the drain holes may extend through the common layer and into the spacer.

[0009] In an embodiment, the discharge hole may extend through the common layer, the spacer, and into the pixel defining layer.

[0010] In an embodiment, the width of the spacer may be smaller than the width of the pixel defining layer.

[0011] In an embodiment, the drain hole may be spaced apart from an edge of the spacer by at least about 3 micrometers (μm).

[0012] In an embodiment, the width of the discharge hole may be in a range from about 1 micrometer (μm) to about 100 μm.

[0013] In an embodiment, each of the planarization layer and the pixel defining layer may each include an organic material.

[0014] In an embodiment, the organic light emitting display device may further include a light emitting layer disposed on the pixel electrode. The common layer may include a common electrode disposed on the light emitting layer.

[0015] In an embodiment, the common layer may further include: a first functional layer disposed between the pixel electrode and the light emitting layer; and a second functional layer disposed between the light emitting layer and the common electrode.

[0016] In an embodiment, the common layer may further include: a cover layer disposed between the common electrode and the package substrate.

[0017] In an embodiment, the organic light emitting display device may further include: a thin film transistor disposed on the base substrate. The planarization layer may cover the thin film transistor.

[0018] A method for manufacturing an organic light-emitting display device includes: disposing an encapsulation substrate on a base substrate, the base substrate including an emission region at which light is emitted and a peripheral region adjacent to the emission region; disposing a common layer between the base substrate and the encapsulation substrate, the common layer being disposed in both the emission region and the peripheral region; disposing a planarization layer, a pixel electrode in the emission region, and each of a pixel defining layer between the base substrate and the common layer; and disposing an emission hole corresponding to the pixel defining layer, the emission hole extending through the common layer.

[0019] In an embodiment, the discharge hole may be formed by a laser drilling process using a laser beam to irradiate the common layer.

[0020] In an embodiment, the depth of the discharge hole may increase as the intensity of the laser beam increases.

[0021] In an embodiment, the width of the discharge hole may increase as the width of the laser beam increases.

[0022] In an embodiment, the method may further include disposing a spacer between the pixel defining layer and the common layer.

[0023] In an embodiment, the drain holes may extend through the common layer and into the spacer.

[0024] In an embodiment, the discharge hole may extend through the common layer, the spacer, and into the pixel defining layer.

[0025] In an embodiment, the pixel defining layer at a position corresponding to the discharge hole extends toward the encapsulation substrate to define a spacer.

[0026] In an organic light-emitting display device according to one or more embodiments, an emission hole overlapped with a pixel defining layer and extending through at least a common layer may be provided corresponding to a planarization layer including an organic material. Therefore, gas emitted from the planarization layer may be discharged through the emission hole, and pixel shrinkage due to the gas may be delayed or substantially prevented.

[0027] In the method of manufacturing a display device according to one or more embodiments, an exhaust hole overlapping the pixel defining layer and extending through at least the common layer may be provided corresponding to the planarization layer by a laser drilling process. Therefore, the gas emitted from the planarization layer may be discharged through the exhaust hole, and pixel shrinkage due to the gas may be delayed or substantially prevented. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The illustrative, non-limiting embodiments will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings.

[0029] Figure 1 is a top view showing an embodiment of an organic light emitting display device.

[0030] Figure 2 It is shown Figure 1 An enlarged top view of an embodiment of a portion of a display area of ​​an organic light emitting display device in FIG.

[0031] Figure 3 It is shown along Figure 2 The line III-III′ in Figure 1 A cross-sectional view of an embodiment of an organic light emitting display device in FIG.

[0032] Figure 4 , Figure 5 and Figure 6 It is shown along Figure 2 The line III-III′ in Figure 1 Cross-sectional views of other embodiments of the organic light emitting display device in FIG.

[0033] Figure 7 , Figure 8, Fig. 9 , Fig.10 , Fig.11 , Fig.12 and Fig.13 is a cross-sectional view illustrating an embodiment of a method of manufacturing an organic light emitting display device. DETAILED DESCRIPTION

[0034] The invention will now be described more fully hereinafter with reference to the accompanying drawings, in which various embodiments are shown. However, the invention may be implemented in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the scope of the invention to those skilled in the art. The same reference numerals represent the same elements throughout.

[0035] It will be understood that when an element is referred to as being related to another element such as "on" another element, the element may be directly on the other element, or intervening elements may exist between them. Conversely, when an element is referred to as being related to another element such as "directly on" another element, there are no intervening elements.

[0036] It will be understood that, although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings herein, the first "element", "component", "region", "layer" or "part" discussed below may be named as the second element, component, region, layer or part.

[0037] The terms used herein are only for the purpose of describing specific embodiments and are not intended to be limiting. As used herein, the singular forms "one", "one (person / kind)" and "said" are intended to include plural forms (including "at least one (person / kind)"), unless the context clearly indicates otherwise. "At least one (person / kind)" is not to be interpreted as being limited to "one (person / kind)". "Or (or)" means "and / or". As used herein, the term "and / or" includes any combination and all combinations of one or more related listed items. It will be further understood that the terms "include" and / or "comprise" or their variations are used in this specification to indicate the presence of stated features, regions, wholes, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, regions, wholes, steps, operations, elements, components and / or their groups.

[0038] In addition, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship of one element to another element as shown in the drawings. It will be understood that relative terms are intended to include different orientations of the device in addition to the orientation depicted in the drawings. For example, if the device in one of the drawings is turned over, the element described as being on the "lower" side of the other element will then be oriented to be on the "upper" side of the other element. The exemplary term "lower" can therefore include both "lower" and "upper" orientations depending on the specific orientation of the drawings. Similarly, if the device in one of the drawings is turned over, the element described as being "below" or "under" the other element will then be oriented to be "above" the other element. The exemplary terms "below..." or "under..." can therefore include both upper and lower orientations.

[0039] As used herein, "about" or "approximately" is inclusive of the stated value and means within an acceptable range of deviation from the particular value as determined by one of ordinary skill in the art, taking into account the measurement in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations, or within ±30%, ±20%, ±10%, or ±5% of the stated value.

[0040] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the present disclosure belongs. It will be further understood that terms (such as those defined in general dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and the present disclosure, and will not be interpreted in an ideal or overly formal sense unless explicitly so defined herein.

[0041] Exemplary embodiments are described herein with reference to cross-sectional views as schematic diagrams of idealized embodiments. As such, variations in the shapes of the diagrams, such as those caused by manufacturing techniques and / or tolerances, will be expected. Therefore, the embodiments described herein should not be construed as being limited to the specific shapes of the regions as illustrated herein, but will include deviations in shapes, such as those caused by manufacturing. For example, a region illustrated or described as flat may typically have rough and / or nonlinear features. In addition, the sharp corners shown may be rounded. Therefore, the regions shown in the accompanying drawings are schematic in nature, and their shapes are not intended to illustrate the precise shapes of the regions, and are not intended to limit the scope of the current claims.

[0042] Hereinafter, an organic light emitting display device and a method of manufacturing the same according to embodiments will be explained in detail with reference to the accompanying drawings.

[0043] Below, we will refer to Figures 1 to 6An organic light emitting display device is described.

[0044] Figure 1 is a top view showing an embodiment of an organic light emitting display device.

[0045] Reference Figure 1 , the organic light emitting display device may include a display area DA and a non-display area NDA. A plurality of pixels may be arranged in the display area DA. An image may be displayed at the display area DA. Light may be emitted at the pixels in the display area DA to display the image. An image may be displayed using a combination of light emitted from the pixels.

[0046] The non-display area NDA may be adjacent to the display area DA. In an embodiment, for example, the non-display area NDA may substantially surround the display area DA. A driver for transmitting a drive signal, a power signal, etc. to a pixel and / or a conductive power line for transmitting a conductive signal may be disposed in the non-display area NDA.

[0047] Figure 2 It is shown Figure 1 FIG. 4 is an enlarged top view of an embodiment of a portion of a display area DA of an organic light emitting display device in FIG. Figure 3 It is shown Figure 1 A cross-sectional view of an embodiment of an organic light emitting display device in FIG. Figure 2 yes Figure 1 An enlarged top view of region II in FIG. Figure 3 is along Figure 2 Cross-sectional view taken along the center line III-III′.

[0048] The organic light emitting display device and its components may be arranged in a plane defined by a first direction and a second direction intersecting the first direction. Figure 1 In the embodiment of the present invention, the vertical direction and the horizontal direction may represent the first direction and the second direction differently. The thickness of the organic light emitting display device and its components may extend along a third direction intersecting each of the first direction and the second direction. Figure 3 In the embodiment of the present invention, the vertical direction represents the third direction, and the horizontal direction represents the first direction and / or the second direction. As used herein, the thickness of a layer or element can be its maximum dimension along the third direction or along the normal direction of the surface defined by the contour along which the layer or element extends.

[0049] Reference Figure 2 and Figure 3 The organic light emitting display device may include a base substrate 110 , a thin film transistor TFT, a planarization layer 130 , an organic light emitting diode OLED, a pixel defining layer 151 , a spacer 152 , a cover layer 164 and an encapsulation substrate 180 .

[0050] The base substrate 110 may include glass, quartz, plastic, or the like.

[0051] The buffer layer 111 may be disposed on the base substrate 110. The buffer layer 111 may block impurities (such as moisture, oxygen, etc.) that penetrate through the base substrate 110. The buffer layer 111 may provide a planarized surface on which other components are disposed. The buffer layer 111 may include an inorganic material such as silicon oxide, silicon nitride, etc. Alternatively, the buffer layer 111 may be omitted.

[0052] The thin film transistor TFT may be disposed on the base substrate 110. The thin film transistor TFT may include an active pattern 121, a gate electrode 123, a source electrode 125, and a drain electrode 126. The thin film transistor TFT may provide an electrical driving current to the organic light emitting diode OLED based on a driving signal.

[0053] The active pattern 121 may be disposed on the buffer layer 111. The active pattern 121 may include amorphous silicon, polycrystalline silicon, an oxide semiconductor, an organic semiconductor, etc. The active pattern 121 may include a channel region and a source region and a drain region spaced apart from each other with the channel region therebetween.

[0054] A gate insulating layer 122 covering the active pattern 121 may be disposed on the buffer layer 111. The gate insulating layer 122 may be disposed between the active pattern 121 and the gate electrode 123 and may insulate the gate electrode 123 from the active pattern 121. The gate insulating layer 122 may include an inorganic material such as silicon oxide, silicon nitride, or the like.

[0055] The gate electrode 123 may be disposed on the gate insulating layer 122. The gate electrode 123 may overlap a portion of the active pattern 121. In an embodiment, for example, the gate electrode 123 may overlap a channel region of the active pattern 121. The gate electrode 123 may include a metal material such as gold (Au), silver (Ag), copper (Cu), nickel (Ni), platinum (Pt), palladium (Pd), aluminum (Al), molybdenum (Mo), titanium (Ti), etc.

[0056] An insulating interlayer 124 covering the gate electrode 123 may be disposed on the gate insulating layer 122. The insulating interlayer 124 may be disposed between the gate electrode 123 and the source electrode 125 and between the gate electrode 123 and the drain electrode 126, and may insulate the source electrode 125 and the drain electrode 126 from the gate electrode 123, respectively. The insulating interlayer 124 may include an inorganic material such as silicon oxide, silicon nitride, and the like.

[0057] The source electrode 125 and the drain electrode 126 may be disposed on the insulating interlayer 124. The source electrode 125 and the drain electrode 126 may be electrically connected to the active pattern 121. In an embodiment, for example, the source electrode 125 and the drain electrode 126 may contact the source region and the drain region of the active pattern 121, respectively, through contact holes defined in the gate insulating layer 122 and the insulating interlayer 124. Each of the source electrode 125 and the drain electrode 126 may include a metal material such as gold (Au), silver (Ag), copper (Cu), nickel (Ni), platinum (Pt), palladium (Pd), aluminum (Al), molybdenum (Mo), titanium (Ti), etc.

[0058] A planarization layer 130 covering the source electrode 125 and the drain electrode 126 may be disposed on the insulating interlayer 124. The planarization layer 130 may cover the thin film transistor TFT and may provide a planarized surface above the thin film transistor TFT. The planarization layer 130 may include an organic material. In an embodiment, for example, the thickness of the planarization layer 130 may be about 1.5 micrometers (μm).

[0059] The organic light emitting diode OLED may be disposed on the planarization layer 130. The organic light emitting diode OLED may include a pixel electrode 140, a first functional layer 161, a light emitting layer 170, a second functional layer 162, and a common electrode 163. The organic light emitting diode OLED may emit light based on an electrical driving current provided by the thin film transistor TFT.

[0060] The pixel electrode 140 may be disposed on the planarization layer 130. The pixel electrode 140 may be patterned for each of the plurality of pixels. That is, the pixel electrode 140 may have a discrete planar shape corresponding to each pixel. The pixel electrode 140 may be electrically connected to the source electrode 125 or the drain electrode 126. In an embodiment, for example, the pixel electrode 140 may contact the drain electrode 126 through a contact hole defined in the planarization layer 130.

[0061] In an embodiment, the pixel electrode 140 may be a reflective electrode. The pixel electrode 140 may include: a reflective layer including a material that reflects light, such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), etc.; a transmissive layer including a material through which light can be transmitted, such as indium tin oxide ("ITO"), indium zinc oxide ("IZO"), zinc oxide ("ZnO"), indium oxide (In 2 O 3 ) etc. In an embodiment, for example, the pixel electrode 140 may have a multi-layer structure such as ITO / Ag / ITO.

[0062] A pixel defining layer 151 partially covering the pixel electrode 140 may be disposed on the planarization layer 130. In an embodiment, for example, the pixel defining layer 151 may cover an edge of the pixel electrode 140 and may include or define an opening exposing a central portion of the pixel electrode 140. An emission area EA where light is emitted from a pixel may be defined by an opening OP of the pixel defining layer 151 exposing a central portion of the pixel electrode 140. A portion of the pixel located outside the emission area EA and in which the pixel defining layer 151 is disposed may be defined as a peripheral area PA. The pixel defining layer 151 may include an organic material. In an embodiment, for example, the thickness of the pixel defining layer 151 may be approximately 1.5 μm.

[0063] The spacer 152 may be disposed on the pixel defining layer 151. The spacer 152 may be disposed on the pixel defining layer 151 in the peripheral area PA. In the same direction along the base substrate 110, the width of the spacer 152 may be less than the width of the pixel defining layer 151. The widths of the spacer 152 and the pixel defining layer 151 may be their maximum dimensions in the same direction along the base substrate 110, but are not limited thereto. The spacer 152 may support the encapsulation substrate 180, and may separate the encapsulation substrate 180 from the organic light emitting diode OLED in the thickness direction to protect the organic light emitting diode OLED. The spacer 152 may include an organic material. In an embodiment, for example, the thickness of the spacer 152 may be approximately 1.5 μm.

[0064] Reference Figure 3 For example, the virtual upper surface of the pixel defining layer 151 may be defined between a plurality of points where the sidewalls of the spacer 152 meet the pixel defining layer 151. The thickness of the spacer 152 may be defined from the virtual upper surface of the pixel defining layer 151, but is not limited thereto. The width of the spacer 152 may be the maximum distance defined between these points.

[0065] In an embodiment, the spacer 152 may be integrally formed with the pixel defining layer 151. Figure 3 , for example, the pixel defining layer 151 at a position corresponding to the discharge hole DH extends toward the encapsulation substrate 180, thereby defining the spacer 152 as a protruding portion of the pixel defining layer 151. The portion having the largest thickness of the pixel defining layer 151 may define the spacer 152, but is not limited thereto. In an alternative embodiment, the spacer 152 and the pixel defining layer 151 may be separately formed as respective portions of two different layers such as among the layers disposed on the base substrate 110.

[0066] In an embodiment, the spacer 152 may have a quadrilateral shape in a top view. However, the planar shape of the spacer 152 is not limited thereto, and the spacer 152 may include other polygonal planar shapes besides the quadrilateral shape.

[0067] The first functional layer 161 may be disposed on the pixel electrode 140, the pixel defining layer 151, and the spacer 152. The first functional layer 161 may be commonly disposed for each pixel among the plurality of pixels. The first functional layer 161 may include a hole injection layer and / or a hole transport layer. In an embodiment, the first functional layer 161 may further include at least one of a buffer layer and an electron blocking layer. In an embodiment, for example, the thickness of the first functional layer 161 may be approximately 1130 angstroms.

[0068] The first functional layer 161 may have a single-layer structure including or formed of a single material, a single-layer structure including or formed of a plurality of different materials, or a multi-layer structure including or formed of a plurality of different materials. In an embodiment, for example, the first functional layer 161 may have a single-layer structure including or formed of a plurality of different materials, or may have a multi-layer structure in which the following layers are sequentially stacked on the pixel electrode 140: a hole injection layer and a hole transport layer; a hole injection layer, a hole transport layer, and a buffer layer; a hole injection layer and a buffer layer; a hole transport layer and a buffer layer; or a hole injection layer, a hole transport layer, and an electron blocking layer. However, the first functional layer 161 is not limited to the above structures.

[0069] The light emitting layer 170 may be disposed on the first functional layer 161. The light emitting layer 170 may be disposed in the opening OP of the pixel defining layer 151. The light emitting layer 170 may have a single layer structure or a multilayer structure including a plurality of layers. In an embodiment, for example, the thickness of the light emitting layer 170 may be from about 1000 Å to about 2000 Å. To about within the range.

[0070] The second functional layer 162 may be disposed on the light emitting layer 170 and the first functional layer 161. The second functional layer 162 may be commonly disposed for each pixel among a plurality of pixels. The second functional layer 162 may include at least one of a hole blocking layer, an electron transport layer, and an electron injection layer. In an embodiment, for example, the second functional layer 162 may have a multilayer structure in which an electron transport layer and an electron injection layer or a hole blocking layer, an electron transport layer, and an electron injection layer are sequentially stacked on the light emitting layer 170, or a single-layer structure including a combination of the above layers or formed by a combination of the above layers. However, the second functional layer 162 is not limited to the above structure. In an embodiment, for example, the thickness of the second functional layer 162 may be approximately

[0071] The common electrode 163 may be disposed on the second functional layer 162. The common electrode 163 may be commonly disposed for each pixel among the plurality of pixels. The common electrode 163 may be a transmissive electrode. In an embodiment, for example, the common electrode 163 may include or be formed of a metal material, a metal alloy, a metal nitride, a conductive metal oxide, or a transparent conductive material, etc. In an embodiment, for example, the thickness of the common electrode 163 may be in the range of about 100 to about 200 Å. To about within the range.

[0072] The cover layer 164 may be disposed on the common electrode 163. The cover layer 164 may be commonly disposed for each pixel among the plurality of pixels. The cover layer 164 may protect the organic light emitting diode OLED and may improve the efficiency of light emitted from the light emitting layer 170. In an embodiment, for example, the cover layer 164 may include an inorganic layer, an organic layer, or an organic layer including inorganic particles, or may be formed of an inorganic layer, an organic layer, or an organic layer including inorganic particles. In an embodiment, for example, the thickness of the cover layer 164 may be in the range of about 100 to about 200 Å. To about within the range.

[0073] The first functional layer 161, the second functional layer 162, the common electrode 163, and the capping layer 164 disposed or formed on and along the corresponding contours of the pixel electrode 140, the pixel defining layer 151, and the spacer 152 may together constitute a common layer 160. The common layer 160 may be disposed or formed throughout the emission area EA and the peripheral area PA, thereby being commonly disposed in the emission area EA and the peripheral area PA.

[0074] A discharge hole DH extending through at least the common layer 160 may be defined or formed on the planarization layer 130. The discharge hole DH may overlap the pixel defining layer 151 and the spacer 152.

[0075] When light or heat is supplied to the planarization layer 130 including the organic material, the pixel defining layer 151 and / or the spacer 152, the organic material may be decomposed by the light or heat, thereby generating gas. When the gas diffuses and is supplied to the organic light emitting diode OLED, the light emitting layer 170 may be degraded, and pixel shrinkage in which the size of the emission area EA is reduced may occur.

[0076] However, according to one or more embodiments, a discharge hole DH extending through at least the common layer 160 may be defined or formed on the planarization layer 130 so that gas may be discharged outside the organic light emitting display device through the discharge hole DH. Thus, pixel shrinkage may be delayed or substantially prevented.

[0077] The discharge hole DH exposes a portion of one or more of the plurality of organic material layers between the common layer 160 and the base substrate 110 to the outside of the common layer 160. The gas may be discharged to the outside of the organic light emitting display device at the portion of the one or more of the plurality of organic material layers between the common layer 160 and the base substrate 110. Figure 3 , for example, an upper surface of the pixel defining layer 151 is exposed to the outside of the common layer 160 , and gas may be discharged to the outside of the organic light emitting display device through the upper surface of the pixel defining layer 151 exposed at the discharge hole DH.

[0078] Figure 4 , Figure 5 and Figure 6 It is shown Figure 1 Cross-sectional views of other embodiments of the organic light emitting display device in FIG. Figure 4 , Figure 5 and Figure 6 Each is along Figure 2 A cross-sectional view taken along line III-III′.

[0079] In an embodiment, the drain hole DH may be as follows Figure 3 152 only extends through the common layer 160 disposed on the spacer 152. In an embodiment, the same drain hole DH' may be as shown in FIG. Figure 4 150 and further extends into the spacer 152. In an embodiment, the same drain hole DH" may be as shown in FIG. Figure 5 150 and the spacer 152 and further extends into the pixel defining layer 151. In an embodiment, the same discharge hole DH″′ may be as shown in FIG. Figure 6 , extending completely through the entirety of the thickness of each of the common layer 160 , the spacer 152 , and the pixel defining layer 151 .

[0080] Therefore, the depth of the discharge hole DH along the thickness of the organic light emitting display device may be greater than or equal to the thickness of the common layer 160, and may be less than or equal to the sum of the thickness of the common layer 160, the thickness of the spacer 152, and the thickness of the pixel defining layer 151. In an embodiment, for example, the depth of the discharge hole DH may be from about To about within the range.

[0081] In an embodiment, the width of the discharge hole DH may be in a range from about 1 μm to about 100 μm. The width of the discharge hole DH may be its maximum dimension along the base substrate 110, but is not limited thereto. Considering a process margin of a method for manufacturing an organic light-emitting display device, the discharge hole DH may be defined inside the planar shape of the spacer 152 to be spaced apart from the outer edge of the spacer 152 by about 3 μm in a top view.

[0082] In an embodiment, the discharge hole DH may have a substantially circular planar shape in a plan view. However, the planar shape of the discharge hole DH is not limited thereto, and the discharge hole DH may have a polygonal planar shape such as a quadrilateral shape.

[0083] The encapsulation substrate 180 may be disposed on the cover layer 164. The encapsulation substrate 180 may include glass, quartz, plastic, or the like.

[0084] The discharge hole DH may be a closed space. The interior of the discharge hole DH surrounded by the common layer 160, the encapsulation substrate 180, the spacer 152, etc. may be in a vacuum state. When gas is generated from the planarization layer 130, the pixel defining layer 151, and / or the spacer 152 at atmospheric pressure, the gas diffuses into the discharge hole DH in a vacuum state. Therefore, the penetration of gas into the organic light emitting diode OLED may be reduced or effectively prevented.

[0085] Below, we will refer to Figures 7 to 13 An embodiment of a method of manufacturing an organic light emitting display device is described.

[0086] Figure 7 , Figure 8 , Fig. 9 , Fig.10 , Fig.11 , Fig.12 and Fig.13 is a cross-sectional view illustrating an embodiment of a method of manufacturing an organic light emitting display device.

[0087] Reference Figure 7 A planarization layer 130 covering the thin film transistor TFT may be disposed or formed on the base substrate 110 , and a pixel electrode 140 may be disposed or formed on the planarization layer 130 .

[0088] The buffer layer 111 may be disposed or formed on the base substrate 110. In an embodiment, for example, an inorganic material including silicon oxide, silicon nitride, etc. may be deposited by chemical vapor deposition ("CVD") or sputtering, etc. to dispose or form the buffer layer 111.

[0089] A thin film transistor TFT may be provided or formed on the buffer layer 111. In an embodiment, for example, amorphous silicon may be deposited on the buffer layer 111 by CVD or sputtering to provide or form an amorphous silicon layer, and the amorphous silicon layer may be partially etched to provide or form an amorphous silicon pattern. Then, the amorphous silicon pattern may be crystallized to provide or form a polycrystalline silicon pattern.

[0090] A gate insulating layer 122 covering the polysilicon pattern may be disposed or formed on the buffer layer 111. In an embodiment, for example, an inorganic material including silicon oxide, silicon nitride, etc. may be deposited by CVD or sputtering to dispose or form the gate insulating layer 122.

[0091] The gate electrode 123 may be disposed or formed on the gate insulating layer 122. In an embodiment, for example, a metal such as gold (Au), silver (Ag), copper (Cu), nickel (Ni), platinum (Pt), palladium (Pd), aluminum (Al), molybdenum (Mo), titanium (Ti), etc. may be deposited by CVD or sputtering to dispose or form a metal layer, and the metal layer may be partially etched to dispose or form the gate electrode 123.

[0092] Impurities may be implanted into the polysilicon pattern to provide or form an active pattern 121. In an embodiment, for example, ions may be doped at opposite ends of the polysilicon pattern using the gate electrode 123 as a mask to provide or form the active pattern 121 including a source region, a drain region, and a channel region provided or formed therebetween.

[0093] An insulating interlayer 124 covering the gate electrode 123 may be disposed or formed on the gate insulating layer 122. In an embodiment, for example, an inorganic material including silicon oxide, silicon nitride, etc. may be deposited by CVD or sputtering to dispose or form the insulating interlayer 124.

[0094] Contact holes may be provided or formed in the gate insulating layer 122 and the insulating interlayer 124. In an embodiment, for example, contact holes may be provided or formed at portions of the gate insulating layer 122 and the insulating interlayer 124 corresponding to the source and drain regions of the active pattern 121, respectively, by photolithography or the like.

[0095] A source electrode 125 and a drain electrode 126 may be disposed or formed on the insulating interlayer 124. In an embodiment, for example, a metal such as gold (Au), silver (Ag), copper (Cu), nickel (Ni), platinum (Pt), palladium (Pd), aluminum (Al), molybdenum (Mo), titanium (Ti), etc. may be deposited by CVD or sputtering, etc. to dispose or form a metal layer filling the contact hole, and the metal layer may be partially etched to dispose or form the source electrode 125 and the drain electrode 126. The source electrode 125 and the drain electrode 126 may correspond to the source region and the drain region of the active pattern 121.

[0096] A planarization layer 130 covering the source electrode 125 and the drain electrode 126 may be disposed or formed on the insulating interlayer 124. In an embodiment, for example, an organic material may be deposited by CVD or sputtering, etc. to dispose or form the planarization layer 130. In an embodiment, for example, the planarization layer 130 may be disposed or formed to have a thickness of about 1.5 μm.

[0097] A contact hole may be provided or formed in the planarization layer 130. In an embodiment, for example, a contact hole may be provided or formed at a portion of the planarization layer 130 corresponding to the source electrode 125 and / or the drain electrode 126 by photolithography or the like.

[0098] The pixel electrode 140 may be disposed or formed on the planarization layer 130. In an embodiment, for example, metals such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), etc. and materials such as indium tin oxide (“ITO”), indium zinc oxide (“IZO”), zinc oxide (“ZnO”), indium oxide (In 2 O 3 ) or the like to set or form a conductive layer filling the contact hole in the planarization layer 130, and the conductive layer can be partially etched to set or form the pixel electrode 140.

[0099] Reference Figure 8 A pixel defining layer 151 covering an edge of the pixel electrode 140 may be disposed or formed on the planarization layer 130 , and a spacer 152 may be disposed or formed on the pixel defining layer 151 .

[0100] In an embodiment, the pixel defining layer 151 and the spacer 152 may be integrally provided or formed. In an embodiment, for example, an organic material may be deposited by CVD or sputtering to provide or form an organic layer, and the organic layer may be partially etched to provide or form the pixel defining layer 151 and the spacer 152. The organic layer may be exposed and cured by photolithography using a halftone mask, so that the pixel defining layer 151 including the opening OP and the spacer 152 may be provided or formed substantially simultaneously (or synchronously). In an embodiment, for example, each of the pixel defining layer 151 and the spacer 152 may be provided or formed to have a thickness of approximately 1.5 μm. The total thickness of the pixel defining layer 151 and the spacer 152 may be approximately twice that of 1.5 μm, but is not limited thereto.

[0101] In an embodiment, the pixel defining layer 151 and the spacer 152 may be independently provided or formed. In an embodiment, for example, a first organic layer may be provided or formed, and an opening OP may be provided or formed in the first organic layer to provide or form the pixel defining layer 151. The pixel defining layer 151 except the spacer 152 may be provided or formed to have a thickness of approximately 1.5 μm. A second organic layer may be provided or formed protruding from an upper surface of the pixel defining layer 151 on the pixel defining layer 151, and the second organic layer may be partially etched to provide or form the spacer 152. The spacer 152 except the pixel defining layer 151 may be provided or formed to have a thickness of approximately 1.5 μm.

[0102] Reference Fig. 9 , a first functional layer 161 may be disposed or formed on the pixel electrode 140 , the pixel defining layer 151 , and the spacer 152 .

[0103] The first functional layer 161 may be disposed or formed on and along the contour of each of the pixel electrode 140, the pixel defining layer 151, and the spacer 152. In an embodiment, for example, the first functional layer 161 may be disposed or formed using various methods such as vacuum deposition, spin coating, casting, Langmuir-Blodgett (“LB”), inkjet printing, laser printing, laser induced thermal imaging (“LITI”), etc. In an embodiment, for example, the first functional layer 161 may be disposed or formed to have a thickness of approximately Thickness.

[0104] Reference Fig.10 , a light emitting layer 170 may be disposed or formed on the first functional layer 161 .

[0105] The light emitting layer 170 may be disposed or formed in the opening OP of the pixel defining layer 151. In an embodiment, for example, the light emitting layer 170 may be disposed or formed using various methods such as vacuum deposition, spin coating, casting, LB, inkjet printing, laser printing, LITI, etc. In an embodiment, for example, the light emitting layer 170 may be disposed or formed to have a thickness from about 100 nm to about 100 nm. To about Thickness.

[0106] Reference Fig.11 The second functional layer 162 may be disposed or formed on the light emitting layer 170 and the first functional layer 161 , and the common electrode 163 may be disposed or formed on the second functional layer 162 .

[0107] The second functional layer 162 may be disposed or formed on and along the light emitting layer 170 and the first functional layer 161. In an embodiment, for example, the second functional layer 162 may be disposed or formed using various methods such as vacuum deposition, spin coating, casting, LB, inkjet printing, laser printing, LITI, etc. In an embodiment, for example, the second functional layer 162 may be disposed or formed to have approximately Thickness.

[0108] The common electrode 163 may be disposed or formed on and along the contour of the second functional layer 162. In an embodiment, for example, a metal, a metal alloy, a metal nitride, a conductive metal oxide, or a transparent conductive material may be deposited by CVD or sputtering to dispose or form the common electrode 163. In an embodiment, for example, the common electrode 163 may be disposed or formed to have a thickness from about 100 to about 1000 mm. To about Thickness.

[0109] The pixel electrode 140 , the first functional layer 161 , the light emitting layer 170 , the second functional layer 162 , and the common electrode 163 disposed or formed on the planarization layer 130 may together constitute an organic light emitting diode OLED.

[0110] Reference Fig.12 , a cover layer 164 may be disposed or formed on the common electrode 163 .

[0111] The cover layer 164 may be disposed or formed on and along the contour of the common electrode 163. In an embodiment, for example, an inorganic material, an organic material, etc. may be deposited by CVD or sputtering, etc. to dispose or form the cover layer 164. In an embodiment, for example, the cover layer 164 may be disposed or formed to have a thickness from about 100 to about 1000 mm. to approximately Thickness.

[0112] The first functional layer 161 , the second functional layer 162 , the common electrode 163 , and the capping layer 164 disposed or formed on and along the pixel electrode 140 , the pixel defining layer 151 , and the spacer 152 may constitute a common layer 160 .

[0113] Reference Fig.13 , a discharge hole DH extending through at least the thickness of the common layer 160 may be disposed or formed on the planarization layer 130. The discharge hole DH may be disposed or formed at a portion of the planarization layer 130 corresponding to the pixel defining layer 151 and the spacer 152.

[0114] In an embodiment, the drain hole DH may be provided or formed by a laser drilling process. Fig.13 For example, the common layer 160 may be irradiated with a laser beam LB from a laser to set or form the discharge hole DH. In an embodiment, for example, a laser may be disposed above the common layer 160, and the common layer 160 may be irradiated with a laser beam LB emitted from the laser to set or form the discharge hole DH.

[0115] The depth of the discharge hole DH along the thickness of the organic light emitting display device may be controlled by the intensity of the laser beam LB. In an embodiment, for example, the depth of the discharge hole DH may increase as the intensity of the laser beam LB increases, and the depth of the discharge hole DH may decrease as the intensity of the laser beam LB decreases.

[0116] In an embodiment, the common layer 160 may be irradiated with a laser beam LB having a first intensity to provide or form a discharge hole DH extending through the thickness of the common layer 160 (see FIG. 1 ). Figure 3 In an embodiment, the common layer 160 may be irradiated with a laser beam LB having a second intensity greater than the first intensity to provide or form a discharge hole DH that completely extends through the thickness of the common layer 160 and at least a portion of the thickness of the spacer 152 (see Figure 4 In an embodiment, the common layer 160 may be irradiated with a laser beam LB having a third intensity greater than the second intensity to provide or form a discharge hole DH that completely extends through the thickness of the common layer 160 and the spacer 152 and at least a portion of the thickness of the pixel defining layer 151 (refer to Figure 5 and Figure 6 ).

[0117] The width of the discharge hole DH taken along the base substrate 110 may be controlled based on the width of the slit through which the laser beam LB passes. In an embodiment, for example, the width of the laser beam LB may increase as the width of the slit increases, and the width of the laser beam LB may decrease as the width of the slit decreases.

[0118] When the discharge hole DH is disposed or formed using the laser beam LB, particles may be generated during etching of the common layer 160 , the spacer 152 , and / or the pixel defining layer 151 , and the particles may be absorbed by the common layer 160 , thereby causing defects in the common layer 160 .

[0119] In order to reduce or effectively prevent defects in the common layer 160, in an embodiment, the base substrate 110 may be arranged to face downward (e.g., along the direction of gravity), and then the base substrate 110 may be irradiated with a laser beam LB to set or form a discharge hole DH. When the base substrate 110 faces downward, the common layer 160 may be located below the base substrate 110 along the direction of gravity. In an embodiment, for example, the base substrate 110 may be rotated at a predetermined angle to face downward, and a laser drilling process may be performed. For the common layer 160 located below the base substrate 110, particles generated during etching of the common layer 160 may be pushed along the direction of gravity and away from the common layer 160, thereby reducing or effectively preventing the absorption of particles.

[0120] In an embodiment, a particle absorption unit may be used to absorb particles generated during the setting or forming of the discharge hole DH. In an embodiment, for example, the particle absorption unit may be provided near a laser emitting unit including a laser for emitting the laser beam LB, and the particle absorption unit may be used to remove particles during the setting or forming of the discharge hole DH.

[0121] Refer again Figure 3 , can be used in Fig.13 The encapsulation substrate 180 is disposed or formed on the common layer 160 disposed or formed in the base substrate 110, thereby manufacturing an organic light emitting display device including the base substrate 110 and the common layer 160 and all layers therebetween.

[0122] The air between the base substrate 110 and the encapsulation substrate 180 can be removed, so that the space between the base substrate 110 and the encapsulation substrate 180 is maintained in a vacuum state. Therefore, as various layers between the base substrate 110 and the encapsulation substrate 180 are set or formed, especially the layer surrounding the discharge hole DH, the inside of the discharge hole DH can be in a vacuum state. When gas is generated from the planarization layer 130, the pixel defining layer 151 and / or the spacer 152 of the organic light-emitting display device at atmospheric pressure for the finally manufactured organic light-emitting display device, the gas can diffuse into the discharge hole DH in a vacuum state. Therefore, for the finally manufactured organic light-emitting display device, the gas infiltration into the organic light-emitting diode OLED can be reduced or effectively prevented.

[0123] The organic light emitting display device according to one or more embodiments may be applied to a display device included in a computer, a notebook computer, a mobile phone, a smart phone, a smart tablet, a portable multimedia player ("PMP"), a personal digital assistant ("PDA"), or an MP3 player, etc.

[0124] Although embodiments of an organic light-emitting display device and a method of manufacturing the same have been described with reference to the accompanying drawings, the illustrated embodiments are examples and may be modified and changed by a person having ordinary skill in the relevant technical field without departing from the technical spirit described in the claims.

Claims

1. An organic light-emitting display device, comprising: a base substrate including an emission region at which light is emitted and a peripheral region adjacent to the emission region; A packaging substrate, disposed on the base substrate; a common layer, located between the base substrate and the packaging substrate, the common layer being disposed in both the emission region and the peripheral region; a planarization layer, a pixel electrode in the emission region, and a pixel defining layer, each of which is between the base substrate and the common layer; a spacer protruding upward from the pixel defining layer and disposed between the pixel defining layer and the common layer; as well as A discharge hole is disposed between the planarization layer and the encapsulation substrate and corresponds to the spacer. The discharge hole extends through a portion of the common layer located above the spacer and is formed as an empty space.

2. The organic light emitting display device according to claim 1, wherein: The spacer is integrally formed with the pixel defining layer.

3. The organic light emitting display device according to claim 2, wherein: The discharge hole corresponding to the pixel defining layer extends through the common layer and into the spacer.

4. The organic light emitting display device according to claim 2, wherein: The discharge hole corresponding to the pixel defining layer extends through the common layer, the spacer, and into the pixel defining layer.

5. The organic light emitting display device according to claim 2, wherein: Along the same direction, a width of the spacer is smaller than a width of the pixel defining layer.

6. The organic light emitting display device according to claim 1, wherein: Each of the planarization layer and the pixel defining layer includes an organic material.

7. The organic light emitting display device according to claim 1, further comprising: a light-emitting layer, arranged on the pixel electrode in the emission region, Wherein, the common layer includes a common electrode stacked with the light-emitting layer.

8. The organic light emitting display device according to claim 7, wherein: The common layer further includes a plurality of functional layers, and the light is emitted at the emission region using the plurality of functional layers, and the plurality of functional layers include: A first functional layer is disposed between the pixel electrode and the light-emitting layer; and The second functional layer is arranged between the light-emitting layer and the common electrode.

9. The organic light emitting display device according to claim 7, wherein: The common layer further includes a covering layer located between the common electrode and the packaging substrate.

10. A method for manufacturing an organic light emitting display device, the method comprising: disposing a packaging substrate on a base substrate, the base substrate including an emission region at which light is emitted and a peripheral region adjacent to the emission region; Disposing a common layer between the base substrate and the encapsulation substrate, the common layer being disposed in both the emission region and the peripheral region; disposing each of a planarization layer, a pixel electrode in the emission area, and a pixel defining layer between the base substrate and the common layer; providing a spacer protruding upward from the pixel defining layer between the pixel defining layer and the common layer; as well as A discharge hole corresponding to the spacer is provided between the planarization layer and the encapsulation substrate, the discharge hole extending through a portion of the common layer located above the spacer and formed as an empty space, The discharge hole is provided by a laser drilling process using a laser beam to irradiate the common layer.

11. The method according to claim 10, wherein: The spacer is integrally formed with the pixel defining layer.

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