Display device

Abstract

A display device is provided, comprising a partition wall disposed on a substrate between a first electrode and a second electrode, the partition wall having an opening, a light-emitting layer disposed in the opening, and a liquid-repellent auxiliary layer disposed between the partition wall and the second electrode.

Description

[0001] This application claims the priority of Korean Patent Application No. 10-2018-0149531 filed on November 28, 2018, in the Korean Intellectual Property Office, and Korean Patent Application No. 10-2019-0067281 filed on June 7, 2019, in the Korean Intellectual Property Office, the disclosures of which are incorporated herein in their entirety by reference. Technical Field

[0002] The present disclosure relates to a display device and a method for manufacturing the same. Background Art

[0003] The light-emitting display device includes two electrodes and a light-emitting layer disposed therebetween. Electrons injected from one electrode serving as a cathode and holes injected from the other electrode serving as an anode are combined with each other in the light-emitting layer to generate excitons. The excitons emit energy to emit light.

[0004] The light emitting display device includes a plurality of pixels having a light emitting diode including a cathode, an anode and a light emitting layer, and each pixel includes a plurality of transistors and capacitors for driving the light emitting diode.

[0005] The above information is only used to enhance the understanding of the concept of the present invention and therefore, may contain information that does not constitute the prior art and is already known in the relevant field. Summary of the invention

[0006] Exemplary embodiments provide a display device including a light emitting layer that can be stably formed by a solution process by providing an auxiliary layer that is efficiently formed on a partition wall while providing liquid repellency, and a method of manufacturing the same.

[0007] An exemplary embodiment provides a display device, the display device including a partition wall disposed on a substrate between a first electrode and a second electrode, the partition wall having an opening, a light emitting layer disposed in the opening, and an auxiliary layer having liquid repellency disposed between the partition wall and the second electrode.

[0008] The maximum thickness of the auxiliary layer may be greater than or equal to about 100 nm and less than or equal to about 200 nm.

[0009] The maximum thickness of the partition wall may be greater than or equal to about 1 μm and less than or equal to about 1.5 μm.

[0010] The auxiliary layer may not overlap the opening.

[0011] The auxiliary layer may include at least one of a fluorine-based compound and the first compound.

[0012] The fluorine-based compound may be represented by Chemical Formula 1, and the first compound may be represented by Chemical Formula 2.

[0013]

[0014] The side edges of the auxiliary layer are inclined and aligned with the inclined side edges of the partition walls.

[0015] The auxiliary layer may expose a portion of the upper surface of the partition wall.

[0016] The auxiliary layer may overlap the side edges of the partition walls.

[0017] The light emitting layer may include quantum dots.

[0018] The display device may further include a red color conversion layer, a green color conversion layer, and a transmission layer stacked with the light emitting layer.

[0019] Each of the red color conversion layer and the green color conversion layer may include quantum dots.

[0020] Another exemplary embodiment provides a display device, the display device including a partition wall disposed on a substrate between a first electrode and a second electrode. The partition wall has an opening. The light-emitting layer is disposed in the opening. An auxiliary layer is disposed between the partition wall and the second electrode. The auxiliary layer includes a plurality of nanoparticles, and a surface of the auxiliary layer facing the second electrode is provided with protrusions and depressions.

[0021] The auxiliary layer may have a thickness of about 30 nm to about 200 nm.

[0022] The plurality of nanoparticles may include silica nanoparticles.

[0023] Another exemplary embodiment provides a method for manufacturing a display device, the method comprising forming a thin film transistor and a pixel electrode connected to the thin film transistor on a substrate. Forming a first material layer overlapping the pixel electrode on the substrate. Etching the first material layer to form a partition wall including an opening. Removing a residual film formed on the pixel electrode. Forming an auxiliary layer having liquid repellency on the partition wall.

[0024] Plasma processes and UVO can be used 3 At least one of the processes is used to remove the residual film.

[0025] The forming of the auxiliary layer may include: forming a second material layer on the partition wall; and removing an uncured region in the second material layer. The uncured region may be removed using an organic solvent.

[0026] The organic solvent may include at least one of toluene, cyclopentanone, anisole, and propylene glycol methyl ether acetate (PGMEA).

[0027] The second material layer may include the same solvent as the organic solvent.

[0028] The method for manufacturing a display device may further include: providing a light emitting solution in the opening; and drying the light emitting solution to form a light emitting layer.

[0029] Another exemplary embodiment provides a method for manufacturing a display device, the method comprising forming a thin film transistor and a pixel electrode connected to the thin film transistor on a substrate. A first material layer and a second material layer overlapping the substrate are sequentially formed on the pixel electrode. The first material layer and the second material layer are etched to form a spacer having an opening and an auxiliary layer. A residual film formed on the pixel electrode is removed. The second material layer may include a plurality of nanoparticles.

[0030] According to an exemplary embodiment of the inventive concept, by including an auxiliary layer stably formed on the upper surface of the partition wall and having liquid repellency, a light emitting layer can be stably formed through a solution process, and the reliability of a light emitting diode and a display device including such a light emitting layer can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 A cross-sectional view of a display device according to an exemplary embodiment of the inventive concept is illustrated.

[0032] Figure 2 A cross-sectional view of a display device according to an exemplary embodiment of the inventive concept is illustrated.

[0033] Figure 3 A cross-sectional view of a display device according to an exemplary embodiment of the inventive concept is illustrated.

[0034] Figure 4 A cross-sectional view of a display device according to an exemplary embodiment of the inventive concept is illustrated.

[0035] Figure 5 , Figure 6 , Figure 7 , Figure 8 and Fig. 9 A cross-sectional view of a display device manufactured by using a manufacturing method according to an exemplary embodiment of the inventive concept is shown.

[0036] Fig.10 , Fig.11 and Fig.12 A schematic cross-sectional view of a display device manufactured by using a manufacturing method according to an exemplary embodiment of the inventive concept is shown.

[0037] Fig.13 A schematic cross-sectional view of a display device according to an exemplary embodiment of the inventive concept is shown. DETAILED DESCRIPTION

[0038] Hereinafter, the present invention will be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. As those skilled in the art will appreciate, the described embodiments can be modified in various different ways without departing from the spirit or scope of the present disclosure.

[0039] Parts that are not related to the description will be omitted to clearly describe the present disclosure, and like reference numerals refer to like elements throughout the specification.

[0040] In addition, in the drawings, the size and thickness of each element are arbitrarily shown for ease of description, and the present disclosure is not necessarily limited to the size and thickness of the elements shown in the drawings. In the drawings, the thickness of layers, films, panels, regions, etc. may be exaggerated for clarity. In the drawings, the thickness of some layers and regions is exaggerated for ease of description.

[0041] It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, the element may be directly on the other element or there may be intervening elements. Conversely, when an element is referred to as being "directly on" another element, there are no intervening elements. In addition, in the specification, the words "on..." or "above..." mean being disposed on an object portion or being disposed under an object portion, and do not necessarily mean being disposed on the upper side of the object portion based on the direction of gravity.

[0042] In addition, unless explicitly described to the contrary, the word “comprising” will be understood to imply the inclusion of stated elements but not the exclusion of any other elements.

[0043] Furthermore, throughout the specification, the phrase "on a plane" means viewing a target portion from the top, and the phrase "on a cross section" means viewing a cross section formed by vertically cutting the target portion from the side.

[0044] Hereinafter, exemplary embodiments according to the present invention will be described. Figure 1 A cross-sectional view of a display device according to an exemplary embodiment of the inventive concept is illustrated.

[0045] Reference Figure 1 , the substrate 110 may include a transparent glass substrate. However, in another exemplary embodiment, the substrate 110 may include plastic layers and barrier layers stacked alternately. The substrate 110 according to the exemplary embodiment may be a flexible substrate that may be bent, folded, rolled, etc.

[0046] The buffer layer 111 is disposed on the substrate 110. The buffer layer 111 can prevent impurities and the like from diffusing from the substrate 110 to the inside of the display device. In addition, in an embodiment where the surface of the substrate 110 is uneven, the buffer layer 111 can improve the flatness of the surface of the substrate 110 (e.g., flatten the surface of the substrate).

[0047] The buffer layer 111 may include an inorganic insulating material such as silicon oxide, silicon nitride, etc. However, in some exemplary embodiments, the buffer layer 111 may include an organic insulating material. The buffer layer 111 may be a single layer or have a multilayer structure. For example, in an exemplary embodiment in which the buffer layer 111 is a double layer, the lower layer of the buffer layer 111 may include silicon nitride, and the upper layer of the buffer layer 111 may include silicon oxide. However, exemplary embodiments of the inventive concept are not limited thereto.

[0048] The semiconductor layer 130 is disposed on the buffer layer 111. In an exemplary embodiment, the semiconductor layer 130 may include amorphous silicon, polycrystalline silicon, an oxide semiconductor, etc. However, exemplary embodiments of the present inventive concept are not limited thereto.

[0049] The semiconductor layer 130 may include a source region 132 connected to a source electrode 153, a drain region 133 connected to a drain electrode 155, and a channel region 131 disposed between the source region 132 and the drain region 133, which will be described later. The source region 132 and the drain region 133 may be doped with impurities.

[0050] The first insulating film 141 is disposed on the semiconductor layer 130 and the buffer layer 111. Figure 1 As shown in , the first insulating film 141 may be directly disposed on the upper surfaces (e.g., in the second direction D2) of the semiconductor layer 130 and the buffer layer 111. The first insulating film 141 may include an inorganic insulating material such as silicon nitride, silicon oxide, metal oxide, etc. However, in some exemplary embodiments, the first insulating film 141 may include an organic insulating material.

[0051] The gate electrode 124 is provided on the first insulating film 141. For example, Figure 1 As shown in FIG. 1 , the gate electrode 124 may be directly disposed on an upper surface (eg, in the second direction D2) of the first insulating film 141. The gate electrode 124 overlaps the channel region 131 (eg, in the second direction D2) of the semiconductor layer 130.

[0052] The gate electrode 124 may include at least one material selected from aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu). The gate electrode 124 may include a single layer or a multilayer structure.

[0053] The second insulating film 142 may be disposed on the gate electrode 124 and the first insulating film 141. For example, the second insulating film 142 may be directly disposed on an upper surface (e.g., in the second direction D2) of the first insulating film 141. The second insulating film 142 may include an inorganic insulating material such as silicon nitride, silicon oxide, etc. However, in some exemplary embodiments, the second insulating film 142 may include an organic insulating material.

[0054] The source electrode 153 and the drain electrode 155 may be disposed on the second insulating film 142. Figure 1 As shown in , the source electrode 153 and the drain electrode 155 may be directly disposed on an upper surface (eg, in the second direction D2 ) of the second insulating film 142 .

[0055] The source electrode 153 and the drain electrode 155 may include at least one material selected from aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu). The source electrode 153 and the drain electrode 155 may include a single layer or a multi-layer structure.

[0056] The source electrode 153 and the drain electrode 155 may be connected to the source region 132 and the drain region 133 of the semiconductor layer 130 , respectively, through contact holes formed in the first insulating film 141 and the second insulating film 142 .

[0057] The third insulating film 160 is disposed on the source electrode 153 and the drain electrode 155. The third insulating film 160 may cover the source electrode 153 and the drain electrode 155 to planarize them. The third insulating film 160 may include an organic insulating material or an inorganic insulating material.

[0058] The first electrode as the pixel electrode 191 is provided on the third insulating film 160. For example, Figure 1 As shown in FIG. 1 , the pixel electrode 191 may be directly disposed on an upper surface (eg, in the second direction D2) of the third insulating film 160. The pixel electrode 191 may be connected to the drain electrode 155 through a contact hole formed in the third insulating film 160.

[0059] The pixel electrode 191 may be a transparent electrode, a transflective electrode, or a reflective electrode. In the embodiment in which the pixel electrode 191 is a transparent electrode or a transflective electrode, the pixel electrode 191 may be made of ITO, IZO, ZnO, In 2 O 3In the embodiment in which the pixel electrode 191 is a reflective electrode, the pixel electrode 191 may include a reflective film including Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr or a mixture thereof and a reflective film including ITO, IZO, ZnO, In 2 O 3 However, exemplary embodiments of the pixel electrode 191 are not limited thereto, and the pixel electrode 191 may include various materials and may have various modified structures such as a single layer structure or a multi-layer structure.

[0060] The partition wall 360 is disposed on the pixel electrode 191 and the third insulating film 160. For example, Figure 1 As shown in FIG. 1 , the partition wall 360 may be directly disposed on the upper surface and side surface (e.g., in the second direction D2) of the pixel electrode 191 and the upper surface of the third insulating film 160. The partition wall 360 includes an opening 365 that exposes a portion of the pixel electrode 191. The light emitting layer 370 may be disposed in the opening 365. For example, as Figure 1 As shown in FIG. 3 , the light emitting layer 370 may be directly disposed on the portion of the pixel electrode 191 exposed by the opening 365. The exposed region of the pixel electrode 191 having the light emitting layer 370 thereon may be a light emitting region, and the region where the partition wall 360 covers the pixel electrode 191 may be a non-light emitting region.

[0061] In an exemplary embodiment, the partition wall 360 may be lyophilic. In a process in which the luminescent solution is provided in the opening 365, the luminescent solution may be stably injected into the opening 365 adjacent to the lyophilic partition wall 360. The lyophilic partition wall 360 may help stably position the luminescent solution within the opening 365.

[0062] The partition wall 360 may include an organic material or a siloxane-based inorganic material. For example, in an exemplary embodiment, the organic material may be benzocyclobutene, polyamide resin, polyacrylic resin, polyimide resin, phenolic resin. However, the exemplary embodiments of the inventive concept are not limited thereto. The partition wall 360 may further include at least one of an initiator, a cross-linking agent, a photoactivator, and a surfactant. When the partition wall 360 includes a positive photoresist, the partition wall 360 may include a photoactivator, and when the partition wall 360 includes a negative photoresist, the partition wall 360 may include an initiator.

[0063] The maximum thickness t1 of the partition wall 360 (e.g., the length from the top surface of the partition wall 360 to the bottom surface of the partition wall 360 in the second direction D2) may be about 1 μm to about 1.5 μm. The side of the partition wall 360 forming the opening 365 may have a tapered shape toward the substrate 110. For example, the opening 365 may expose the side of the partition wall 360, and the side of the partition wall 360 is spaced farther apart as the distance from the substrate 110 increases. The thickness t1 of the partition wall 360 in a flat area excluding the inclined side of the partition wall 360 may be about 1 μm to about 1.5 μm. In an embodiment in which the thickness t1 of the partition wall 360 is less than about 1 μm, the distinction between the light-emitting region in which the light-emitting layer is provided and the non-light-emitting region in which the light-emitting layer is not provided is unclear, and the resolution of the display device may be reduced. In an embodiment in which the thickness t1 of the partition wall 360 is greater than about 1.5 μm, it is difficult for other components stacked on the partition wall 360 to have a uniform profile of a continuous shape.

[0064] The light emitting layer 370 is disposed on the pixel electrode 191 exposed by the opening 365 as described above. The common electrode 270 is disposed on the light emitting layer 370 and the partition wall 360. Figure 1 As shown in FIG. 1 , the common electrode 270 may be disposed directly on upper surfaces (eg, in the second direction D2 ) of the light emitting layer 370 and the partition wall 360 .

[0065] The pixel electrode 191, the light emitting layer 370 and the common electrode 270 may form a light emitting diode. The common electrode 270 may be a transparent electrode, a transflective electrode or a reflective electrode.

[0066] When the common electrode 270 is a transparent electrode or a transflective electrode, the common electrode 270 may include a layer containing a metal having a small work function such as Li, Ca, LiF / Ca, LiF / Al, Al, Ag, Mg, and a mixture thereof, and a layer containing a metal having a small work function such as ITO, IZO, ZnO, or In 2 O 3 When the common electrode 270 is a reflective electrode, the common electrode 270 may include, for example, a layer including Li, Ca, LiF / Ca, LiF / Al, Al, Ag, Mg, and a mixture thereof. However, the material and stacking structure of the common electrode 270 are not limited thereto, and exemplary embodiments of the inventive concept may have various changes and arrangements.

[0067] The pixel electrode 191 is an anode as a hole injection electrode, and the common electrode 270 is a cathode as an electron injection electrode. However, exemplary embodiments of the inventive concept are not limited thereto. For example, in other exemplary embodiments, according to a driving method of the light-emitting device, the pixel electrode 191 may be a cathode, and the common electrode 270 may be an anode. Holes and electrons are injected from the pixel electrode 191 and the common electrode 270 into the light-emitting layer 370, respectively, and excitons generated by combining the injected holes and electrons are reduced from an excited state to a ground state to emit light.

[0068] In an exemplary embodiment, the light emitting layer 370 may include a low molecular weight organic material or a polymer organic material such as poly (3,4-ethylenedioxythiophene) (PEDOT). The light emitting layer 370 may include a multilayer structure including at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer, and a light emitting layer. In an embodiment including all of these layers, the hole injection layer is disposed on the pixel electrode 191 as an anode, and the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer may be sequentially stacked thereon.

[0069] The light emitting layer 370 according to an exemplary embodiment may include quantum dots. The quantum dots may emit red light, green light, or blue light. In an exemplary embodiment, the core of the quantum dots may be selected from II-VI compounds, III-V compounds, IV-VI compounds, IV elements, IV compounds, and combinations thereof.

[0070] The II-VI group compound can be selected from: a two-element compound selected from CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof; a two-element compound selected from CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHg S, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof; and four-element compounds selected from HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof.

[0071] The Group III-V compounds can be selected from: two-element compounds selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof; three-element compounds selected from GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InNAs, InNSb, InPAs, InPSb and mixtures thereof; and four-element compounds selected from GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, GaAlNP and mixtures thereof.

[0072] The IV-VI group compound can be selected from: a two-element compound selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe and a mixture thereof; a three-element compound selected from SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and a mixture thereof; and a four-element compound selected from SnPbSSe, SnPbSeTe, SnPbSTe and a mixture thereof. The IV group element can be selected from Si, Ge and a mixture thereof. For example, the IV group compound can be a two-element compound selected from SiC, SiGe and a mixture thereof.

[0073] The two-element compound, the three-element compound or the four-element compound may be present in the particle of the quantum dot at a uniform concentration, or they may be divided into states having partially different concentrations to exist in the same particle. In addition, a core / shell structure in which some quantum dots surround other quantum dots is possible. In an exemplary embodiment, the interface between the core and the shell may have a concentration gradient in which the concentration of the element of the shell decreases as the distance from the center of the shell decreases.

[0074] In some exemplary embodiments, the quantum dot may have a core-shell structure including a core of the above-mentioned nanocrystal and a shell surrounding the core. The shell of the quantum dot may be used as a passivation layer for maintaining semiconductor properties and / or a charging layer for applying electrophoretic properties to the quantum dot by preventing chemical denaturation of the core. The shell may be a single layer or have a multilayer structure. Examples of the shell of the quantum dot include metal oxides or non-metal oxides, semiconductor compounds, or combinations thereof.

[0075] For example, the metal oxide or non-metal oxide may be SiO 2 、Al2 O 3 、TiO 2 、ZnO、MnO、Mn 2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 , NiO or other two-element compounds such as MgAl 2 O 4 、CoFe 2 O 4 、NiFe 2 O 4 、CoMn 2 O 4 However, exemplary embodiments of the present inventive concept are not limited thereto.

[0076] In addition, the semiconductor compound may be CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc. However, exemplary embodiments of the inventive concept are not limited thereto.

[0077] The quantum dots may have a full width at half maximum (FWHM) of the emission wavelength spectrum equal to or less than about 45 nm. For example, the quantum dots may have a FWHM equal to or less than about 40 nm. In another exemplary embodiment, the quantum dots may have a FWHM equal to or less than about 30 nm. In this range, the color purity or color reproducibility of the display device may be improved. In addition, since the light emitted by the quantum dots is emitted in all directions, the viewing angle of the transmitted light may be improved.

[0078] Furthermore, the shape of the quantum dot is not particularly limited, and may include spherical, conical, multi-arm or cubic nanoparticles, nanotubes, nanowires, nanofibers, nanosheet particle shapes, and the like.

[0079] Quantum dots can control the color of emitted light according to their particle size. Therefore, quantum dots can have various luminescent colors such as blue, red and green.

[0080] The light emitting layer 370 may be formed by a solution process. For example, the light emitting layer 370 may be formed by using any of the following processes: spin coating, inkjet printing, gravure printing, roll-to-roll printing, syringe injection, dip coating, spray coating, relief printing, and screen printing.

[0081] In an exemplary embodiment, the auxiliary layer 380 is disposed between the common electrode 270 and the partition wall 360. The auxiliary layer 380 may be disposed on the upper surface of the partition wall 360. Figure 1 As shown in , the lower surface of the auxiliary layer 380 (e.g., in the second direction D2) may be directly disposed on the upper surface of the partition wall 360, and the upper surface of the auxiliary layer 380 may contact the lower surface of the common electrode 270. The auxiliary layer 380 may not overlap with the opening 365 of the partition wall 360 in the second direction D2. The auxiliary layer 380 may not overlap with the side surface of the partition wall 360 in the second direction D2. The auxiliary layer 380 may generally be spaced apart from the opening 365 of the partition wall 360 in the first direction D1. However, as described in more detail later, in an exemplary embodiment, the lower surface of the side 381 of the auxiliary layer 380 may substantially overlap with the upper surface of the side of the partition wall 360 (e.g., in the second direction D2).

[0082] The auxiliary layer 380 according to the exemplary embodiment may have liquid repellency. For example, the auxiliary layer 380 may include a composition having liquid repellency. During the manufacturing process of the display device in which the light-emitting layer is formed by a solution process, the light-emitting solution used to form the light-emitting layer 370 may contact the auxiliary layer 380. However, since the auxiliary layer 380 has liquid repellency, the light-emitting solution can be forced to stay away from the auxiliary layer 380, and the light-emitting solution can be stably positioned in the opening 365 of the lyophilic partition wall 360 without being positioned on the auxiliary layer 380. The light-emitting solution can be positioned in the opening 365 without contacting the auxiliary layer 380, and in particular, the light-emitting solution can form a stable light-emitting layer 370 that does not overflow from the opening 365. Therefore, the reliability of the light-emitting diode and the display device including the light-emitting layer 370 can be improved thereby.

[0083] In this specification, lyophobicity refers to the property of pushing out a solution and not allowing the solution to penetrate well, and the word "lyophilic" refers to the property of having affinity for a solution. For example, a solution may have a low surface binding force with a surface having a lyophobic property, and may have an excellent surface binding force with another lyophilic surface. Therefore, according to an exemplary embodiment of the present inventive concept, the surface binding force between the luminescent solution and the auxiliary layer 380 may be weaker than the surface binding force between the luminescent solution and the partition wall 360. The contact angle of the luminescent solution relative to the auxiliary layer 380 may be, for example, about 40 degrees or more.

[0084] The auxiliary layer 380 may include a material that is lyophobic to the light emitting solution. In an exemplary embodiment, the auxiliary layer 380 may include a monomer or a polymer. For example, the auxiliary layer 380 may include a fluorine compound or a first compound. However, in other embodiments, the auxiliary layer 380 may include any compound having lyophobicity. The fluorine compound may be represented by Chemical Formula 1, and the first compound may be represented by Chemical Formula 2. However, exemplary embodiments of the inventive concept are not limited thereto.

[0085]

[0086]

[0087] The maximum thickness t2 of the auxiliary layer 380 may be about 100 nm to about 200 nm. For example, the maximum thickness t2 of the auxiliary layer 380 may be between about 120 nm and about 180 nm. Considering that the maximum thickness t1 of the partition wall 360 is about 1 μm to about 1.5 μm, the auxiliary layer 380 is much thinner than the partition wall 360. The auxiliary layer 380 may be formed as a thin layer for providing liquid repellency to the upper surface of the partition wall 360.

[0088] In an embodiment where the thickness t2 of the auxiliary layer 380 is less than 100 nm, it may be difficult to substantially form a layer having liquid repellency. In addition, the thickness t2 of the auxiliary layer 380 may not exceed 200 nm, so that the auxiliary layer 380 is sufficiently liquid repellent and the luminescent solution forming the luminescent layer 370 is stably positioned in the opening 365. In an embodiment where the thickness t2 of the auxiliary layer 380 exceeds 200 nm, the luminescent solution injected into the opening 365 may be excessively raised, and the luminescent solution may flow into the adjacent opening to mix with the contents therein, and may not be stably positioned in the opening 365.

[0089] In addition, the auxiliary layer 380 may have a surface energy of about 15 dyne / cm or less, the light-emitting solution used to form the light-emitting layer 370 may have a surface energy of about 17 dyne / cm to about 35 dyne / cm, and the pixel electrode 191 may have a surface energy of about 40 dyne / cm. The partition wall 360 may have a surface energy of about 30 dyne / cm to about 43 dyne / cm. The surface energy of the partition wall 360 may be greater than the surface energy of the light-emitting layer 370 and the auxiliary layer 380, and may be less than the surface energy of the pixel electrode 191.

[0090] The auxiliary layer 380 is disposed on the partition wall 360, and may be formed as a separate layer from the partition wall 360. Since the auxiliary layer 380 is formed through a manufacturing process separate from that of the partition wall 360, an interface may be formed between the partition wall 360 and the auxiliary layer 380.

[0091] In addition, the side 381 of the auxiliary layer 380 may be inclined so that it is substantially aligned with the inclined side of the partition wall 360. The lower surface of the side 381 of the auxiliary layer 380 and the upper surface of the side of the partition wall 360 may be substantially overlapped (e.g., in the second direction D2). In an exemplary embodiment, the auxiliary layer 380 may be manufactured by using the same mask as the mask used to form the partition wall 360 in the manufacturing process.

[0092] In an embodiment in which the light emitting solution is provided on the substrate 110 by a solution process such as an inkjet process, the light emitting solution is not positioned on the upper surface of the lyophobic auxiliary layer 380, and can be stably provided in the opening 365 included in the partition wall 360. The lyophobic auxiliary layer 380 prevents the light emitting solution from overflowing the partition wall 360. Therefore, the light emitting layer 370 can have improved reliability, and a light emitting diode and a display device having improved reliability can be provided.

[0093] An encapsulation layer 400 for protecting the light emitting diode may be disposed on the common electrode 270. Figure 1 As shown in , the encapsulation layer 400 may be directly disposed on an upper surface (eg, in the second direction D2) of the common electrode 270. The encapsulation layer 400 may be sealed to the substrate 110 by a sealant. The encapsulation layer 400 may be formed of various materials such as glass, quartz, ceramic, plastic, metal, and combinations thereof.

[0094] In other exemplary embodiments, the encapsulation layer 400 may be disposed on the common electrode 270 without using a sealant. The encapsulation layer 400 may include a single layer of an inorganic film or a single layer of an organic film. The encapsulation layer 400 may also include a multilayer structure in which inorganic films and organic films are alternately stacked. For example, the encapsulation layer 400 may include two inorganic films and an organic film disposed between the two inorganic layers.

[0095] In this specification, a pixel is the smallest unit for displaying an image. For example, in an exemplary embodiment, a thin film transistor is disposed in each pixel in a display area, and a light emitting diode is connected to the thin film transistor. However, in other exemplary embodiments, a pixel may include at least two thin film transistors and one capacitor. However, exemplary embodiments of the inventive concept are not limited thereto. For example, a pixel may include three or more thin film transistors and two or more capacitors.

[0096] In the following, reference will be made to Figures 2 to 4 A display device according to an exemplary embodiment is described. Figure 2 A cross-sectional view of a display device according to an exemplary embodiment is shown. Figure 3 A cross-sectional view of a display device according to an exemplary embodiment is shown. Figure 4A cross-sectional view of a display device according to an exemplary embodiment is shown. Description of constituent elements that are the same as those of the exemplary embodiment described above will be omitted.

[0097] Reference Figure 2 In the exemplary embodiment shown in , the auxiliary layer 380 may be disposed between the partition wall 360 and the common electrode 270. The auxiliary layer 380 may be disposed only on the upper surface of the partition wall 360, and the lower surface of the side 381 of the auxiliary layer 380 may not substantially overlap with the upper surface of the inclined side of the partition wall 360. For example, the side 381 of the auxiliary layer 380 may terminate in the first direction D1 before reaching a portion overlapping with the inclined side of the partition wall 360 in the second direction D2.

[0098] The auxiliary layer 380 may expose a portion of the upper surface 360s of the partition wall 360 from the side of the partition wall 360 to a portion overlapping the side 381 of the auxiliary layer 380 in the second direction D2. In an exemplary embodiment, the common electrode 270 may overlap the portion of the upper surface 360s of the partition wall 360 exposed by the auxiliary layer 380 in the second direction D2.

[0099] Reference Figure 3 In the exemplary embodiment shown in , the upper and lower portions of the side 381 of the auxiliary layer 380 may overlap not only the upper surface of the partition wall 360, but also the portion of the side of the partition wall 360 located below the upper surface of the partition wall 360. For example, the side 381 of the auxiliary layer 380 may extend beyond the edge of the upper surface of the partition wall 360 in the first direction D1, and may overlap the light emitting layer 370 in the second direction D2. The side 381 of the auxiliary layer 380 may extend downward in the second direction D2, and may cover the upper portion of the side of the partition wall 360. Figure 3 In the exemplary embodiment shown in , the side 381 has a semicircular shape for a portion extending beyond the edge of the upper surface of the partition wall 360 in the first direction D1 toward the region overlapping the light emitting layer 370 in the second direction D2. However, in other exemplary embodiments, this portion of the side 381 may have various shapes.

[0100] exist Figure 3 In the embodiment shown in , the auxiliary layer 380 can provide liquid repellency not only to the upper surface of the partition wall 360, but also to the upper end of the side surface of the partition wall 360. Therefore, when the luminescent solution is injected into the opening 365, the auxiliary layer 380 can provide sufficient liquid repellency (especially in the area corresponding to the entrance of the opening 365) to prevent the luminescent solution from overflowing the partition wall 360.

[0101] According to the auxiliary layer 380 having such a shape, the light emitting solution provided in the manufacturing process may be more efficiently provided inside the opening 365 , and the light emitting layer 370 may be more stably formed.

[0102] Reference Figure 4 In the exemplary embodiment shown in , the auxiliary layer 380 may include a plurality of nanoparticles 383. For example, the nanoparticles 383 may include silicon dioxide nanoparticles, etc. However, exemplary embodiments of the inventive concept are not limited thereto, and may include any nanoparticles having a diameter of a nanometer unit.

[0103] The nanoparticles 383 according to an exemplary embodiment may also include fluorine bound to the surface of the nanoparticles 383. The nanoparticles 383 including fluorine bound to the surface thereof may provide low surface energy for the auxiliary layer 380. Therefore, the auxiliary layer 380 may exhibit high liquid repellency.

[0104] The surface 380s of the auxiliary layer 380 including the nanoparticles 383 may have protrusions and depressions. The surface 380s of the auxiliary layer 380 may be a surface having a predetermined roughness. For example, the surface 380s of the auxiliary layer 380 including the nanoparticles 383 may have a roughness of less than 0.01 mm. Figures 1 to 3 The roughness of the auxiliary layer 380 shown in the embodiment is large. Even if the auxiliary layer 380 does not include a separate liquid-repellent agent (eg, a material having a liquid-repellent component), according to Figure 4 The auxiliary layer 380 of the exemplary embodiment may also provide liquid repellency by providing the nanoparticles 383 with a predetermined roughness.

[0105] The auxiliary layer 380 including the plurality of nanoparticles 383 may have excellent plasma resistance, etc. For example, even if plasma treatment according to a residual film removal process (described later) is performed on the surface of the auxiliary layer 380 , the auxiliary layer 380 may not be significantly damaged.

[0106] The maximum thickness t2 of the auxiliary layer 380 may be from about 30 nm to about 200 nm. The thickness of the auxiliary layer 380 may be set by the content of the nanoparticles 383. In an exemplary embodiment, the thickness of the auxiliary layer 380 may be much thinner than the thickness of the partition wall 360 having a thickness of about 1 μm to about 1.5 μm.

[0107] In an embodiment in which the maximum thickness t2 of the auxiliary layer 380 is less than about 30 nm, it may be difficult to provide physical lyophobicity to the upper portion of the auxiliary layer 380. This is because the nanoparticles 383 for providing physical lyophobicity are not sufficiently included in the auxiliary layer 380. The thickness t2 of the auxiliary layer 380 may not exceed 200 nm, so that the auxiliary layer 380 has sufficient lyophobicity and the luminescent solution is stably positioned in the opening 365. When the thickness t2 of the auxiliary layer 380 exceeds 200 nm, the luminescent solution injected into the opening 365 may be excessively raised, and the luminescent solution may flow into adjacent openings without being stably positioned in the opening 365.

[0108] The auxiliary layer 380 including the nanoparticles 383 may have a surface energy of 20 dyne / cm or less. The partition wall 360 may have a surface energy of about 30 dyne / cm to about 43 dyne / cm, the light-emitting solution forming the light-emitting layer 370 may have a surface energy of about 17 dyne / cm to 35 dyne / cm, and the pixel electrode 191 may have a surface energy of 40 dyne / cm. The surface energy of the partition wall 360 may be greater than the surface energy of the light-emitting solution forming the light-emitting layer 370 and the auxiliary layer 380, and may be less than the surface energy of the pixel electrode 191.

[0109] In the following, the Figure 5-Figure 9 A method for manufacturing a display device according to an exemplary embodiment of the present invention. Figure 5 , Figure 6 , Figure 7 , Figure 8 and Fig. 9 A cross-sectional view of a display device manufactured by using a manufacturing method according to an exemplary embodiment is shown.

[0110] First, a transistor including a buffer layer 111, a semiconductor layer 130, a gate electrode 124, a source electrode 153, and a drain electrode 155, a first insulating film 141, a second insulating film 142, and a third insulating film 160 are formed on a substrate 110. A pixel electrode 191 connected to the drain electrode 155 is formed on the third insulating film 160.

[0111] Next, if Figure 5 As shown in FIG. 1 , a partition wall 360 having an opening 365 is formed on the third insulating film 160 and the pixel electrode 191. The opening 365 may expose a portion of the pixel electrode 191.

[0112] The spacer 360 may be formed by patterning the first material layer. The spacer 360 including the opening 365 may be formed by a photolithography process.

[0113] The first material layer may overlap the front surface of the substrate 110 and may include an organic material such as benzocyclobutene, polyamide resin, polyacrylic resin, polyimide resin, and phenolic resin, or a siloxane-based inorganic material.

[0114] When the photolithography process is performed to form the opening 365, a residual film 361 is formed on the pixel electrode 191 by the first material layer forming the partition wall 360. For example, the thickness of the residual film 361 (for example, the length from the upper surface of the residual film 361 to the lower surface of the residual film 361 in the second direction D2) can be about 10nm to about 20nm. In the embodiment in which the residual film 361 is not removed, since the residual film 361 is disposed between the light-emitting layer 370 and the pixel electrode 191, the light-emitting efficiency and light-emitting life of the light-emitting device are reduced.

[0115] like Figure 6 As shown in the figure, it can be removed by the residual film removal process. Figure 5 The residual film 361 described in the above description can be formed by using a plasma process or UVO. 3 The process is performed to remove the residual film 361. However, exemplary embodiments are not limited thereto, and any method for removing the residual film 361 may be performed.

[0116] Since the residual film removal process is performed on the front surface of the substrate 110 , portions of the surfaces of the spacers 360 exposed on the substrate 110 may be damaged when the residual film 361 is removed.

[0117] After performing the residual film removal process, such as Figure 7 As shown in , the second material layer 380a is applied to overlap with the front surface of the substrate 110. For example, as Figure 7 As shown in , the second material layer 380 a may be disposed on the upper surface and the side of the partition wall 360 and the exposed surface of the pixel electrode 191 .

[0118] The second material layer 380 a may include a compound and a resin providing liquid repellency.

[0119] The liquid-repellent compound may be in the form of a polymer or a monomer. For example, the compound may include at least one of a fluorine compound and a first compound. The fluorine compound may include, for example, a compound represented by Chemical Formula 1. The first compound may include, for example, a compound represented by Chemical Formula 2. The resin may include, for example, a compound represented by Chemical Formula 3.

[0120]

[0121] The molecular weight of the monomer or polymer included in the second material layer 380a may be smaller than that of the first material layer included in the partition wall 360. In addition, the compound having liquid repellency included in the second material layer 380a may include an amount of about 5 wt % or less relative to the total content of the second material layer 380a.

[0122] A mask MASK is disposed on the second material layer 380a, and the region not overlapping the mask MASK is cured, and then the uncured region may be removed by using a solvent.

[0123] In an exemplary embodiment, the uncured second material layer 380a may be removed using the same solvent as that included in the second material layer 380a. However, in an exemplary embodiment, the solvent may include any solvent for removing the uncured second material layer 380a. The solvent may be an organic solvent. For example, the solvent may be at least one of toluene, cyclopentanone, anisole, and propylene glycol methyl ether acetate (PGMEA). However, exemplary embodiments of the inventive concept are not limited thereto.

[0124] like Figure 8 As shown in FIG. 3 , an auxiliary layer 380 is then formed on the spacer 360 without forming the auxiliary layer 380 in the opening 365 . Figure 8 The exemplary embodiment of the present invention shows the auxiliary layer 380 having inclined sides substantially aligned with the inclined sides of the spacer 360, but the auxiliary layer 380 may also be formed to have an inclined side according to the shape or alignment of the mask. Figure 2 and Figure 3 The shapes shown in the exemplary embodiment of FIG.

[0125] like Fig. 9 As shown in FIG. 3 , a light emitting solution 370a for forming a light emitting layer in the opening 365 is then provided. The light emitting solution 370a may be provided by a solution process, for example, inkjet printing may be used to provide the light emitting solution 370a.

[0126] In a display device according to an exemplary embodiment of the present invention, since the liquid-repellent auxiliary layer 380 is formed at the upper end (e.g., in the second direction D2) of the partition wall 360, the luminescent solution 370a provided by the solution process can be stably positioned within the opening 365 of the partition wall 360 without overflowing the auxiliary layer 380.

[0127] By removing the solvent included in the light emitting solution 370a through a drying process or the like, a Figure 1 Thereafter, a common electrode 270 and an encapsulation layer 400 may be sequentially formed on the light emitting layer 370 to provide a Figure 1 The display device shown in .

[0128] When the residual film removal process is performed after the auxiliary layer is formed, not only the residual film disposed on the pixel electrode but also the auxiliary layer disposed on the upper portion of the partition wall is damaged. Therefore, the liquid repellency of the auxiliary layer is reduced, and the luminescent solution provided to form the luminescent layer also overflows from the opening 365 and is positioned on the upper surface of the partition wall.

[0129] However, in the display device according to the exemplary embodiment of the present invention, the auxiliary layer having liquid repellency is formed after the residual film removal process is performed. Therefore, the auxiliary layer can stably provide liquid repellency to the upper surface of the partition wall to stably form the light-emitting layer, and effectively remove the residual film that reduces the light-emitting efficiency and the light-emitting life. Therefore, it is possible to provide a display device with improved reliability.

[0130] In the following, reference will be made to Figures 10 to 12 A method of manufacturing a display device according to an exemplary embodiment will be described. Fig.10 , Fig.11 and Fig.12 A cross-sectional view of a display device manufactured by using a manufacturing method according to an exemplary embodiment is shown.

[0131] First, a transistor including a buffer layer 111, a semiconductor layer 130, a gate electrode 124, a source electrode 153, and a drain electrode 155, a first insulating film 141, a second insulating film 142, and a third insulating film 160 are formed on a substrate 110. A pixel electrode 191 connected to the drain electrode 155 is formed on the third insulating film 160.

[0132] Next, if Fig.10 As shown in FIG. 1 , a first material layer 360 a and a second material layer 380 a overlapping the front surface of the substrate 110 are respectively formed on the third insulating film 160 and the pixel electrode 191 .

[0133] For example, the first material layer 360 a may include an organic material such as benzocyclobutene, polyamide resin, polyacrylic resin, polyimide resin, phenolic resin, or a siloxane-based inorganic material.

[0134] The second material layer 380a may include a plurality of nanoparticles 383. The second material layer 380a according to an exemplary embodiment may not include the compound having liquid repellency, but is not limited thereto, and may partially include the compound having liquid repellency.

[0135] The upper surface of the second material layer 380 a may be configured to have protrusions and depressions. The protrusions and depressions may be formed by a plurality of nanoparticles 383 .

[0136] like Fig.11As shown in FIG. 3 , a spacer 360 including an opening 365 and an auxiliary layer 380 are subsequently formed. The spacer 360 and the auxiliary layer 380 may be manufactured by a photolithography process.

[0137] In the above process, a residual film 361 generated while removing the first material layer 360 a is formed on the exposed portion of the pixel electrode 191 .

[0138] The residual film 361 is a factor that reduces the light emitting efficiency and light emitting life of the light emitting element. The residual film 361 can be removed by a residual film removal process. For example, the residual film removal process can be a plasma process or a UVO 3 However, exemplary embodiments of the inventive concept are not limited thereto.

[0139] In this embodiment, the auxiliary layer 380 is resistant to plasma or UVO due to the presence of a plurality of nanoparticles 383. 3 The process has excellent durability, so the auxiliary layer 380 exhibits little surface damage from the residual film removal process. The upper portion of the partition wall 360 can maintain liquid repellency by the auxiliary layer 380, and only the unnecessary residual film 361 can be removed by the residual film removal process.

[0140] like Fig.12 As shown in FIG. 3 , a light emitting solution 370a for forming a light emitting layer may then be injected into the opening 365. The light emitting solution 370a may be provided by a solution process, for example, by an inkjet process.

[0141] According to an exemplary embodiment, in a process in which the light-emitting solution 370a is provided, an auxiliary layer 380 provided with protrusions and depressions formed of a plurality of nanoparticles 383 is provided on an upper surface of the partition wall 360. Since the protrusions and depressions of the auxiliary layer 380 provide liquid repellency, the light-emitting solution 370a can be stably injected into the opening 365 without remaining at the upper end of the auxiliary layer 380. The light-emitting solution 370a can be injected into the opening 365 without overflowing the upper portion of the partition wall 360.

[0142] While the solvent of the luminescent solution 370a is removed by a drying process or the like, a Figure 4 Thereafter, a common electrode 270 and an encapsulation layer 400 may be sequentially formed on the light emitting layer 370 to provide a Figure 4 The display device shown in .

[0143] Although it is shown that the auxiliary layer 380 including the plurality of nanoparticles 383 according to the exemplary embodiment is formed before the residual film removal process, the present invention is not limited thereto. Figures 5 to 9As described in the exemplary embodiment of the manufacturing process of the present invention, the auxiliary layer 380 including the plurality of nanoparticles 383 may be formed after the residual film removal process. The auxiliary layer 380 including the plurality of nanoparticles 383 resists damage caused by the residual film removal process. Therefore, the auxiliary layer 380 including the plurality of nanoparticles 383 may be formed before or after the residual film removal process.

[0144] In the following, reference will be made to Fig.13 A display device according to an exemplary embodiment of the inventive concept is described. Fig.13 1 shows a cross-sectional view of a display device according to an exemplary embodiment. Fig.13 The display device of the exemplary embodiment includes a substrate 110, a buffer layer 111, a semiconductor layer 130, a first insulating film 141, a gate electrode 124, a second insulating film 142, a source electrode 153, a drain electrode 155, a third insulating film 160, a pixel electrode 191, a partition wall 360, an auxiliary layer 380, a light emitting layer 370, a common electrode 270 and an encapsulation layer 400, and their detailed description as described above will be omitted. The light emitting layer 370 can emit blue light.

[0145] Hereinafter, the color conversion panel 20 disposed on the encapsulation layer 400 will be described in detail.

[0146] The color conversion panel 20 includes a second substrate 210 overlapping the substrate 110 (eg, in the second direction D2 ). Red, green, and blue color filters 230R, 230G, and 230B arranged in the first direction D1 may be disposed on the second substrate 210 .

[0147] The display device according to the exemplary embodiment is provided with at least one light blocking member 220 surrounding the red color filter 230R, the green color filter 230G, and the blue color filter 230B. For example, the red color filter 230R, the green color filter 230G, and the blue color filter 230B may be spaced apart in the first direction D1, and the light blocking member 220 may fill the space therebetween. The light blocking member 220 may prevent different lights emitted by adjacent pixels from mixing with each other, and may space apart the regions in which the red color filter 230R, the green color filter 230G, and the blue color filter 230B are provided.

[0148] The first planar film 240 is disposed between the light blocking member 220, the red color filter 230R, the green color filter 230G, and the blue color filter 230B, and the encapsulation layer 400. Fig.13As shown in , the first flat film 240 may be directly disposed below the lower surface (e.g., in the second direction D2) of the light blocking member 220, the red color filter 230R, the green color filter 230G, and the blue color filter 230B. The first flat film 240 may be a film for flattening (e.g., planarizing) the surface of the light blocking member 220, the red color filter 230R, the green color filter 230G, and the blue color filter 230B. For example, the first flat film 240 may flatten the lower surface (e.g., in the second direction D2) of the light blocking member 220, the red color filter 230R, the green color filter 230G, and the blue color filter 230B. The first flat film 240 may include at least one of an organic insulating material and an inorganic insulating material.

[0149] The red color conversion layer 250R, the green color conversion layer 250G, and the transmissive layer 250B may be disposed between the first flat film 240 and the encapsulation layer 400. For example, the red color conversion layer 250R, the green color conversion layer 250G, and the transmissive layer 250B may be disposed directly below a lower surface (e.g., in the second direction D2) of the first flat film 240. The red color conversion layer 250R, the green color conversion layer 250G, and the transmissive layer 250B may be repeatedly arranged along the first direction D1 and may be spaced apart from each other. For example, Fig.13 As shown in , the space between the color conversion layer and the transmission layer may overlap the light blocking member 220 (eg, in the second direction D2).

[0150] The red color conversion layer 250R and the green color conversion layer 250G convert the light emitted by the light emitting layer 370 and emit light. For example, the red color conversion layer 250R may convert the blue light emitted by the light emitting layer 370 into red light. The red color conversion layer 250R may include first semiconductor nanocrystals 251R that convert the blue light incident from the light emitting layer 370 into red light. The first semiconductor nanocrystals 251R may include at least one of a phosphor and a quantum dot.

[0151] The green color conversion layer 250G may convert blue light emitted by the light emitting layer 370 into green light. The green color conversion layer 250G may include second semiconductor nanocrystals 251G that convert blue light incident from the light emitting layer 370 into green light. The second semiconductor nanocrystals 251G may include at least one of a phosphor and a quantum dot.

[0152] The transmission layer 250B emits incident light from the light emitting layer 370 without converting the incident light. For example, blue light may be incident on the transmission layer 250B and may be emitted as is without being converted by the transmission layer 250B.

[0153] The quantum dots included in the first semiconductor nanocrystal 251R and the second semiconductor nanocrystal 251G can be independently selected from group II-VI compounds, group III-V compounds, group IV-VI compounds, group IV elements, group IV compounds, and combinations thereof. The specific compound is the same as the compound described above with respect to the quantum dots of the light emitting layer 370.

[0154] The transmission layer 250B may transmit incident light as it is. The transmission layer 250B may include a resin that transmits blue light. The transmission layer 250B disposed in the region emitting blue light does not include any separate semiconductor nanocrystals.

[0155] Although not shown, the transmission layer 250B may further include at least one of a dye and a pigment. The transmission layer 250B including the dye or the pigment may reduce external light reflection and may provide blue light with improved color purity.

[0156] At least one of the red color conversion layer 250R, the green color conversion layer 250G, and the transmission layer 250B may further include a scatterer 252. The contents of the corresponding scatterers 252 included in the red color conversion layer 250R, the green color conversion layer 250G, and the transmission layer 250B may be different. The scatterer 252 may increase the amount of light that is converted in the color conversion layers 250R and 250G or passes through the transmission layer 250B and then emitted through the color conversion layer and the transmission layer. The scatterer 252 may uniformly provide front brightness and side brightness for the light emitted by the light emitting layer 370.

[0157] The scatterer 252 may include any material that can uniformly scatter incident light. In an exemplary embodiment, the scatterer 252 may include a TiO 2 、ZrO 2 、Al 2 O 3 、In 2 O 3 、ZnO、SnO 2 , Sb 2 O 3 and ITO.

[0158] As an example, the red color conversion layer 250R, the green color conversion layer 250G, and the transmission layer 250B may include a photosensitive resin and may be formed by a photolithography process. However, exemplary embodiments of the inventive concept are not limited thereto. For example, the red color conversion layer 250R, the green color conversion layer 250G, and the transmission layer 250B may be formed by a printing process or an inkjet process, and the red color conversion layer, the green color conversion layer, and the transmission layer may include a material that is not a photosensitive resin. In this specification, although it is described that the color conversion layer and the transmission layer are formed by a photolithography process, a printing process, or an inkjet process, exemplary embodiments of the inventive concept are not limited thereto.

[0159] The red color conversion layer 250R may overlap the red color filter 230R in the second direction D2, the green color conversion layer 250G may overlap the green color filter 230G in the second direction D2, and the transmission layer 250B may overlap the blue color filter 230B in the second direction D2.

[0160] The second flat film 260 is disposed between the side spaces between the red color conversion layer 250R, the green color conversion layer 250G and the transmission layer 250B and between the lower surfaces of the color conversion layer and the transmission layer and the upper surface of the encapsulation layer 400. The second flat film 260 may overlap the front surface of the second substrate 210.

[0161] The second flat film 260 may flatten (e.g., planarize) one surface of the red color conversion layer 250R, the green color conversion layer 250G, and the transmission layer 250B. The second flat film 260 may include an organic insulating material or an inorganic insulating material. However, exemplary embodiments of the present inventive concept are not limited thereto, and the second flat film 260 may include any material capable of performing a flattening function.

[0162] exist Fig.13 In an exemplary embodiment of the present invention, the encapsulation layer 400 and the color conversion panel 20 are in direct contact with each other. However, exemplary embodiments of the present inventive concept are not limited thereto. For example, in some exemplary embodiments, a separate filling layer may be provided between the encapsulation layer 400 and the color conversion panel 20. In this embodiment, the encapsulation layer 400 and the color conversion panel 20 may be combined by various known methods and structures (such as by a separate adhesive layer or by a sealant along the edge of the display device). In addition, the present specification may include a filter layer between the color conversion layers 250R and 250G and the encapsulation layer 400 to emit light of a specific wavelength, or may include a second substrate 210 and the color conversion layers 250R and 250G and a blue light blocking filter layer located between the second substrate 210 and the transmission layer 250B.

[0163] While the invention has been described in conjunction with exemplary embodiments, it will be understood that the invention is not limited to the disclosed embodiments, but on the contrary is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

Claims

1. A display device, comprising: A partition wall is disposed on the substrate between the first electrode and the second electrode, the partition wall having an opening and being liquid-philic; A light-emitting layer is disposed in the opening; as well as The auxiliary layer has liquid repellency and is disposed between the partition wall and the second electrode. Wherein, the auxiliary layer comprises at least one of a fluorine compound and a first compound, and Wherein, the fluorine compound is represented by Chemical Formula 1, and the first compound is represented by Chemical Formula 2:

2. The display device as claimed in claim 1, wherein: The maximum thickness of the auxiliary layer is greater than or equal to 100 nm and less than or equal to 200 nm.

3. The display device as claimed in claim 1, wherein: The maximum thickness of the partition wall is greater than or equal to 1 μm and less than or equal to 1.5 μm.

4. The display device as claimed in claim 1, wherein: The auxiliary layer does not overlap the opening.

5. The display device as claimed in claim 1, wherein: The side edges of the auxiliary layer are inclined and aligned with the inclined side edges of the partition walls.

6. The display device as claimed in claim 1, wherein: The auxiliary layer exposes a portion of an upper surface of the partition wall.

7. The display device as claimed in claim 1, wherein: The auxiliary layer overlaps with the side edges of the partition walls.

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