Semiconductor device manufacturing method and semiconductor device

Abstract

The present invention provides a method for manufacturing a semiconductor device and a semiconductor device, which can reduce manufacturing costs. A box body (3a) of a resin housing (3) surrounds a storage space (3d) for storing a semiconductor chip (1), and an injection path (3e) is formed on the side wall to connect from the storage space (3d) to the external space. By installing a substrate (2) in the first opening (3c) of such a resin housing (3) and storing a semiconductor chip (1) (B) in the storage space (3d), and injecting a softened sealing component (C) only from the injection path (3e), the sealing component (4) is solidified, so that the storage space (3d) and the injection path (3e) can be sealed (D) using the sealing component (4). Therefore, regardless of the type of the sealing component (4), and in addition, there is no need to use a large and precise mold for sealing, so that the manufacturing cost can be reduced.

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a semiconductor device and a semiconductor device. Background Art

[0002] The semiconductor device includes semiconductor elements such as IGBT (Insulated Gate Bipolar Transistor) and power MOSFET (Metal Oxide Semiconductor Field Effect Transistor), and is used as, for example, a power conversion device.

[0003] Such a semiconductor device is configured such that a circuit board provided with semiconductor chips and electronic components is housed in a housing space of a terminal housing having lead terminals etc. insert-molded therein, and the circuit board is sealed by a sealing member through transfer molding.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2004-111435 Summary of the invention

[0007] Technical issues

[0008] However, the transfer molding device requires a large and precise mold, which increases the manufacturing cost. In particular, the gate portion of the mold, which serves as the supply port of the sealing component, is precise and easily deteriorated. Therefore, the mold life of such a device is short. Therefore, the maintenance frequency of the device becomes high, and the cost for maintenance management also increases.

[0009] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a method for manufacturing a semiconductor device and a semiconductor device capable of reducing manufacturing costs.

[0010] Technical Solution

[0011] According to one aspect of the present invention, there is provided a method for manufacturing a semiconductor device, comprising: a preparation step of preparing a substrate having a semiconductor chip on a main surface and a resin shell, the resin shell comprising a box body surrounding a storage space for storing the semiconductor chip, an injection path connected from the storage space to an external space being formed on a side wall of the box body, and a first opening connected from the storage space to the external space being formed on a bottom surface of the box body; an installation step of installing the substrate at the first opening of the resin shell and storing the semiconductor chip in the storage space; and a sealing step of injecting a sealing component from the injection path to seal the storage space.

[0012] In addition, according to one aspect of the present invention, there is provided a semiconductor device comprising: a semiconductor chip; a substrate having the semiconductor chip disposed on a main surface thereof; a resin casing having a box body surrounding a storage space for storing the semiconductor chip, an injection path connected from the storage space to an external space on a side wall of the box body, and a first opening connected from the storage space to the external space on a bottom surface of the box body; and a sealing component filled into the storage space and the injection path of the resin casing.

[0013] Technical Effects

[0014] According to the disclosed technology, it is possible to reduce manufacturing costs and easily manufacture semiconductor devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a diagram for explaining the method for manufacturing the semiconductor device according to the first embodiment.

[0016] Figure 2 It is a top view of the semiconductor device according to the second embodiment.

[0017] Figure 3 This is a cross-sectional view (part 1) of a semiconductor device according to a second embodiment.

[0018] Figure 4 This is a cross-sectional view of the semiconductor device according to the second embodiment (part 2).

[0019] Figure 5 This is a cross-sectional view of the semiconductor device according to the second embodiment (part 3).

[0020] Figure 6 This is a diagram (part 1) for explaining a method for manufacturing a resin case included in a semiconductor device according to a second embodiment.

[0021] Figure 7 This is a diagram (part 2) for explaining the method for manufacturing the resin case included in the semiconductor device according to the second embodiment.

[0022] Figure 8 This is a diagram (part 1) for explaining a sealing step in the method for manufacturing a semiconductor device according to the second embodiment.

[0023] Fig. 9 This is a diagram (part 2) for explaining the sealing step of the method for manufacturing the semiconductor device according to the second embodiment.

[0024] Explanation of symbols

[0025] 1: Semiconductor chip

[0026] 2.2a: Substrate

[0027] 3, 6: Resin shell

[0028] 3a, 6a: Box

[0029] 3b, 6b: bottom

[0030] 3c, 6c: 1st opening

[0031] 3d, 6d, 32b: Storage space

[0032] 3e, 6e: Injection path

[0033] 4, 40, 42: Sealing parts

[0034] 5, 7, 10: Semiconductor devices

[0035] 20: Semiconductor unit

[0036] 21: No. 1 semiconductor chip

[0037] 22: Second semiconductor chip

[0038] 23: Circuit pattern

[0039] 24: Insulation substrate

[0040] 25: Heat sink

[0041] 26: Adhesive

[0042] 30: Resin shell

[0043] 31: Frame

[0044] 32a: Storage opening

[0045] 32c: 1st lead area

[0046] 32d: 2nd lead area

[0047] 33~36: Lead terminal

[0048] 37: Control IC

[0049] 38: Gate

[0050] 41: Flake resin

[0051] 50: Lead parts

[0052] 51: Connecting parts

[0053] 52: Moulding parts

[0054] 52a: Inclined surface

[0055] 60: Sealing device

[0056] 61: Loading surface

[0057] 62: Heater

[0058] 63: Groove

[0059] 64: Plunger

[0060] 65: Runner

[0061] 66: Fixed parts DETAILED DESCRIPTION

[0062] Hereinafter, the embodiments will be described with reference to the accompanying drawings. It should be noted that in the following description, "front surface" and "upper surface" are used interchangeably. Figure 1 The semiconductor devices 5 and 7 are Figure 3 and Figure 4 In the semiconductor device 10 of FIG. 1 , “upper” refers to the surface facing upward. Figure 1 The semiconductor devices 5 and 7 are Figure 3 and Figure 4 The "back side" and "bottom side" are used to indicate the direction of the upper side in the semiconductor device 10. Figure 1 The semiconductor devices 5 and 7 are Figure 3 and Figure 4 In the semiconductor device 10 of FIG. 1 , “lower” refers to the surface facing downward. Figure 1 The semiconductor devices 5 and 7 are Figure 3 and Figure 4 In the semiconductor device 10, the direction of the lower side is indicated. Figure 1 , 3 , 4 also show the same directionality. Figure 2 , the front side of the semiconductor device 10 is shown. Figure 2The surface perpendicular to the paper surface. "Front", "upper surface", "upper", "back", "bottom", "lower", and "side" are just expressions for the convenience of determining relative positional relationships, and do not limit the technical concept of the present invention. For example, "upper" and "lower" do not necessarily refer to directions perpendicular to the ground. In other words, the directions of "upper" and "lower" are not limited to the direction of gravity.

[0063] In the following description, "parallel" and "perpendicular" are sometimes used to express the relative angle relationship between two objects. "Parallel" is not necessarily limited to when the angle between the two objects is 0°. The so-called "parallel" only requires that the angle between the two objects is greater than -15° and less than +15°. In addition, "perpendicular" is not necessarily limited to when the angle between the two objects is 90°. The so-called "perpendicular" only requires that the angle between the two objects is greater than 75° and less than 105°.

[0064] [First embodiment]

[0065] use Figure 1 A semiconductor device according to a first embodiment will be described. Figure 1 1 is a diagram for explaining a method for manufacturing a semiconductor device according to a first embodiment. Figure 1 (A)~ Figure 1 (C) is a diagram for explaining the steps included in the method for manufacturing a semiconductor device. Figure 1 (D) and (E) respectively show semiconductor devices manufactured through such steps.

[0066] First of all, Figure 1 The semiconductor device 5 shown in (D) is described. The semiconductor device 5 includes a semiconductor chip 1, a substrate 2 on which the semiconductor chip 1 is provided on the main surface, a resin case 3, and a sealing component 4. The resin case 3 includes a box 3a surrounding a storage space 3d for storing the semiconductor chip 1. The box 3a may be a frame having a storage space 3d that passes through from top to bottom and is in a frame shape. The resin case 3 includes an injection path 3e connected from the storage space 3d to the external space on the side wall of the box 3a, and includes a first opening 3c connected from the storage space 3d to the external space on the bottom surface 3b of the box 3a. The substrate 2 is arranged in the first opening 3c of the resin case 3, and the first opening 3c is closed by the substrate 2. The sealing component 4 is filled in the storage space 3d and the injection path 3e of the resin case 3, and the storage space 3d and the injection path 3e of the resin case 3 are sealed by the sealing component 4. In addition, the resin case 3 includes a second opening connected from the storage space 3d to the external space on the upper surface opposite to the bottom surface 3b. The sealing member 4 is filled up to the second opening, and the housing space 3 d and the injection path 3 e of the resin case 3 are sealed by the sealing member 4 .

[0067] When manufacturing such a semiconductor device 5, first, Figure 1 In the preparation step shown in (A), a substrate 2 and a resin case 3 having a semiconductor chip 1 provided on the main surface are prepared. The resin case 3 includes a box 3a surrounding a storage space 3d. The resin case 3 has an injection path 3e formed on the side wall of the box 3a, which connects from the storage space 3d to the external space, and a first opening 3c formed on the bottom surface 3b of the box 3a, which connects from the storage space 3d to the external space. It should be noted that a substrate bonding area having a step for mounting the substrate 2 later is formed around the first opening 3c. In addition, a second opening connecting from the storage space 3d to the external space may be provided on the upper surface opposite to the bottom surface 3b of the resin case 3.

[0068] Next, in Figure 1 In the mounting step shown in (B), the substrate 2 having the semiconductor chip 1 disposed on the main surface is mounted on the substrate bonding area of ​​the resin housing 3. The substrate 2 can be mounted on the step disposed on the substrate bonding area via an adhesive not shown. The first opening 3c of the resin housing 3 is closed with the substrate 2. At this time, the substrate 2 having the semiconductor chip 1 disposed is mounted so that the front surface thereof faces the upper side of the resin housing 3. Thus, the semiconductor chip 1 is accommodated in the accommodation space 3d of the resin housing 3.

[0069] Next, in Figure 1 In the sealing process shown in (C), the softened sealing component is injected from the injection path 3e. At this time, the second opening of the resin housing 3 can be closed by a mold not shown in the figure. The injection path 3e can be a gate for injecting the sealing component into the storage space 3d. There can be one injection path 3e or more. By using multiple injection paths 3e, the flow of the sealing component can be easily controlled. In addition, the injection path 3e can also be a vent for exhausting gas from the storage space 3d. For example, although in Figure 1 In (C), the sealing component is injected from the injection paths 3e on both sides of the resin case 3, but the injection path 3e on one long side can also be used as a gate to set the injection path of the sealing component, and the injection path 3e on the other long side on the opposite side of one side can be used as a vent to set the gas exhaust path. In this way, the storage space 3d is filled with the sealing component and sealed. Then, the structure Figure 1 The semiconductor device 5 is shown in (D).

[0070] In such a method for manufacturing a semiconductor device 5, a box body 3a of a resin housing 3 surrounds a storage space 3d for storing a semiconductor chip 1, and an injection path 3e is formed on a side wall to connect from the storage space 3d to an external space. The substrate 2 is mounted in the first opening 3c of such a resin housing 3, and the semiconductor chip 1 is stored in the storage space 3d. By injecting a softened sealing member from the injection path 3e, the storage space 3d and the injection path 3e can be sealed by the sealing member 4. Therefore, regardless of the type of the sealing member 4, it is not necessary to use a large mold with a precise gate for sealing, so that the manufacturing cost can be reduced. For example, even if the sealing member 4 uses a tablet resin composed of an epoxy resin with high moisture resistance, it is not necessary to perform transfer molding using a large mold with a precise gate, so that the manufacturing cost can be suppressed, and a semiconductor device 5 with high moisture resistance can be easily obtained.

[0071] In addition, as described above, since the semiconductor device 5 manufactured in this way is not limited in the type of the sealing member 4, the properties such as moisture resistance are improved by the sealing member 4. In addition, in the semiconductor device 5, the sealing member 4 seals the injection path 3e in addition to the storage space 3d. Therefore, the sealing member 4 can firmly seal the semiconductor device 5.

[0072] It should be noted that, in the above description, as long as the box body 3a of the resin case 3 surrounds the storage space 3d for storing the semiconductor chip 1 and an injection path 3e is formed on the side wall to communicate from the storage space 3d to the external space, it is not limited to the above-mentioned semiconductor device 5. Figure 1 The semiconductor device 7 shown in (E) includes a semiconductor chip 1 and a substrate 2a on the main surface of which the semiconductor chip 1 is provided. In addition, there is a resin case 6, which includes a box body 6a surrounding a storage space 6d for storing the semiconductor chip 1, and an injection path 6e connected from the storage space 6d to the external space is formed on the side wall of the box body 6a, and a first opening 6c connected from the storage space 6d to the external space is formed on the bottom surface 6b of the box body 6a. In addition, the sealing component 4 seals the storage space 6d and the injection path 6e of the resin case 6. In the installation process of manufacturing such a semiconductor device 7, the substrate 2a is installed in the first opening 6c from the upper surface of the box body 6a through the storage space 6d. The substrate 2a can be installed on a step provided in the substrate bonding area via an adhesive not shown in the figure. The first opening 6c of the resin case 6 is closed with the substrate 2a. At this time, it is installed in a manner that the front side of the substrate 2a on which the semiconductor chip 1 is provided faces the upper side of the resin case 6. Thereafter, with Figure 1 In the sealing step (C), the softened sealing member is injected from the injection path 6e to seal the housing space 6d. The method for manufacturing the semiconductor device 7 and the semiconductor device 7 can also obtain the same effects as described above.

[0073] [Second embodiment]

[0074] In the second embodiment, a more specific description is given than in the first embodiment. Figure 2 to Figure 5 Such a semiconductor device will be described. Figure 2 is a top view of a semiconductor device according to a second embodiment. Figure 3 to Figure 5 is a cross-sectional view of a semiconductor device according to the second embodiment. Figure 2 In the figure, the sealing component is omitted. Figure 3 express Figure 2 The cross-sectional view at the dashed line X1-X1 of Figure 4 express Figure 2 The cross-sectional view at the dashed line X2-X2 of Figure 5 express Figure 2 Cross-sectional view at the single-dot chain line YY.

[0075] like Figure 2 to Figure 4 As shown in FIG. 1 , the semiconductor device 10 includes a semiconductor unit 20 and a resin case 30 for housing the semiconductor unit 20. The semiconductor unit 20 includes six sets of first semiconductor chips 21 and second semiconductor chips 22. The semiconductor device 10 also includes six circuit patterns 23 on the front surface of which the first semiconductor chips 21 and second semiconductor chips 22 are arranged, an insulating substrate 24 on which the circuit patterns 23 are formed, and a heat sink 25 on which the insulating substrate 24 is arranged. In such a semiconductor unit 20, the first semiconductor chip 21 and the second semiconductor chip 22 and the circuit pattern 23 on which the first semiconductor chip 21 and the second semiconductor chip 22 are arranged on the front surface are arranged as a set, for example, in six sets on the insulating substrate 24 in a direction parallel to the long side of the insulating substrate 24. In the second embodiment, when there is no special explanation, one of the structures that exist in plurality is cited for explanation.

[0076] The first semiconductor chip 21 includes a switching element such as an IGBT or a power MOSFET. When the first semiconductor chip 21 is an IGBT, a collector electrode is provided as a main electrode on the back side, and a gate electrode and an emitter electrode as a main electrode are provided on the front side. When the first semiconductor chip 21 is a power MOSFET, a drain electrode is provided as a main electrode on the back side, and a gate electrode and a source electrode as a main electrode are provided on the front side. The back side of the first semiconductor chip 21 is bonded to the circuit pattern 23 by solder (not shown).

[0077] The second semiconductor chip 22 includes a diode such as a SBD (Schottky Barrier Diode) or a FWD (Free Wheeling Diode). Such a second semiconductor chip 22 has an output electrode (cathode electrode) as a main electrode on the back side and an input electrode (anode electrode) as a main electrode on the front side. The back side of the second semiconductor chip 22 is bonded to the circuit pattern 23 by solder (not shown).

[0078] The circuit pattern 23 is made of a metal such as copper or a copper alloy having excellent electrical conductivity. In addition, in order to improve corrosion resistance, a material such as nickel may be formed on the surface of the heat sink 25 by, for example, electroplating. Specifically, in addition to nickel, there are nickel-phosphorus alloys, nickel-boron alloys, etc. It should be noted that the shape of the circuit pattern 23 is an example. Such a circuit pattern 23 is produced by etching a conductive plate or foil formed on one surface of the insulating substrate 24, or by attaching a conductive plate to one surface of the insulating substrate 24. It should be noted that the thickness of the circuit pattern 23 is preferably greater than 0.10 mm and less than 1.00 mm, and more preferably greater than 0.20 mm and less than 0.50 mm.

[0079] The insulating substrate 24 may be an organic insulating layer composed of an insulating resin such as epoxy resin or liquid crystal polymer with low thermal resistance and aluminum oxide or silicon oxide with high thermal conductivity. Alternatively, an inorganic insulating layer may be a ceramic with high thermal conductivity such as aluminum oxide, aluminum nitride, or silicon nitride with excellent thermal conductivity.

[0080] The heat sink 25 is made of aluminum, iron, silver, copper or an alloy containing at least one of these materials with excellent thermal conductivity. In addition, in order to improve corrosion resistance, for example, nickel or other materials can be formed on the surface of the heat sink 25 by electroplating. Specifically, in addition to nickel, there are nickel-phosphorus alloys, nickel-boron alloys, etc. It should be noted that a cooler (not shown) can also be installed on the back of the heat sink 25 by solder or silver solder to improve heat dissipation. The cooler at this time is made of aluminum, iron, silver, copper or an alloy containing at least one of these materials with excellent thermal conductivity. In addition, as a cooler, a heat sink composed of fins or multiple fins and a cooling device using water cooling can be used. In addition, the heat sink 25 can be integrated with such a cooler. In this case, it is made of aluminum, iron, silver, copper or an alloy containing at least one of these materials with excellent thermal conductivity. In addition, in order to improve corrosion resistance, for example, nickel or other materials can be formed on the surface of the heat sink 25 integrated with the cooler by electroplating. Specifically, in addition to nickel, there are nickel-phosphorus alloys, nickel-boron alloys, and the like.

[0081] The combination of the circuit pattern 23 , the insulating substrate 24 , and the heat sink 25 may be a DCB (Direct Copper Bond) substrate or an AMB (Active Metal Brazed) substrate in which copper foil is bonded to both surfaces of an inorganic insulating layer such as alumina, aluminum nitride, or silicon nitride.

[0082] Next, the resin case 30 will be described. The resin case 30 includes: a frame 31 as a box body in a frame shape, lead terminals 33 to 36 as external connection terminals provided on the frame 31, and a control IC (Integrated Circuit) 37. The frame 31 includes a storage space 32b for storing the semiconductor unit 20, and includes a storage opening 32a on the bottom surface of the frame 31, and includes a plurality of gates 38 on the side surface of the frame 31. In addition, the frame 31 may also have a storage opening on the upper surface. It should be noted that in Figure 2 In the figure, the position of the storage opening 32a is indicated by a dotted line. In addition, the frame 31 is made of a thermoplastic resin. Examples of such resins include polyphenylene sulfide (PPS), polybutylene terephthalate (PBT), polybutylene succinate (PBS), polyamide (PA), and acrylonitrile butadiene styrene (ABS).

[0083] The storage opening 32a is an area opened on the bottom surface of the frame 31. A step is formed on the periphery of the storage opening 32a. The front surface of the semiconductor unit 20 is mounted on the step of the storage opening 32a by the adhesive 26. The storage opening 32a is covered by the semiconductor unit 20, and the storage space 32b is sealed by the semiconductor unit 20. The storage space 32b is a space surrounded by the frame 31 connected to the external space from the storage opening 32a. A step is provided on the inner side of the frame 31 in the storage space 32b along the long side, and the first lead area 32c and the second lead area 32d are respectively set on the step surface.

[0084] A plurality of lead terminals 33 are integrated in a row on one long side of the frame 31. One end of each lead terminal 33 protrudes from one long side of the frame 31 to the outside space, and the other end is exposed in the first lead area 32c in the storage space 32b. In addition, lead terminals 34 and 35 are integrated in a row with respect to the plurality of lead terminals 33 on one long side of the frame 31. One end of the lead terminals 34 and 35 protrudes from one long side of the frame 31 to the outside space, and the other end is exposed in the first lead area 32c in the storage space 32b and wired. In addition, the control IC 37 is respectively arranged on the lead terminal 35 in the first lead area 32c via solder (not shown). It should be noted that, in order to achieve the desired function, electronic components such as thermistors, capacitors, resistors, etc. can be appropriately used instead of the control IC 37. In addition, a plurality of lead terminals 36 are integrated in a row on the other long side located on the opposite side of the one long side of the frame 31. One end of each lead terminal 36 protrudes from the other long side of the frame body 31 to the external space, and the other end is exposed in the second lead area 32d in the storage space 32b. In the semiconductor unit 20 thus stored in the resin case 30, the first semiconductor chip 21, the second semiconductor chip 22, the lead terminals 33 to 36 and the control IC 37 are electrically connected by wiring members such as appropriate wires (symbols omitted). Thus, a desired circuit is formed in the semiconductor device 10.

[0085] A plurality of gates 38 are formed on one side of the other long side of the frame 31. Figure 4 and Figure 5 As shown, the gate 38 is formed in a row in parallel with the lead terminal 36. The gate 38 can be formed by being alternately arranged in parallel with the lead terminal 36. In addition, the lead terminal 36 and the gate 38 can be formed perpendicular to the side of the frame 31. The gate 38 can have the same cross-sectional shape as the lead terminal 36. Each gate 38 is connected from the storage space 32b to the external space of the frame 31. On this basis, the storage space 32b of the resin case 30 in which the semiconductor unit 20 is installed and each gate 38 are filled and sealed by the sealing member 40.

[0086] Next, a method for manufacturing such a semiconductor device 10 is described. Figure 6 and Figure 7 A method for forming the resin case 30 will be described. Figure 6 and Figure 7 1 is a diagram for explaining a method for manufacturing a resin case included in a semiconductor device according to a second embodiment. Figure 6 (A) indicates a lead member 50 including a lead terminal 36, Figure 6 (B) shows a side view of the mold member 52 included in the lead member 50. Figure 6(C) shows the lead member 50 which is insert-molded in the frame body 31 . Figure 7 (A) indicates that the mold removal component 52 is removed. Figure 7 (B) shows the state after the mold removal member 52 is removed.

[0087] First, prepare Figure 6 The lead component 50 shown in (A). In the lead component 50, a plurality of lead terminals 36, a plurality of mold components 52 and a connecting component 51 are integrated. That is, in the lead component 50, the lead terminals 36 and the mold components 52 are arranged in a row side by side, and their ends are connected to the connecting component 51. Such a lead component 50 is made of aluminum, iron, silver, copper or an alloy containing at least one of these with excellent conductivity. In addition, in order to improve corrosion resistance, for example, a metal such as nickel or gold can be formed on the surface by electroplating. Specifically, in addition to nickel and gold, there are nickel-phosphorus alloys, nickel-boron alloys, etc. In addition, gold can be stacked on the nickel-phosphorus alloy. In addition, it is preferred that a release agent such as silicon is coated on the surface of at least the area of ​​the mold component 52 that is integrated with the frame 31 described later.

[0088] The lead component 50 is obtained by stamping a metal plate of such a material using a precision mold. Etching by chemical corrosion can be used instead of stamping. The lead terminal 36 and the mold component 52 can be rod-shaped, cylindrical or columnar. Figure 6 As shown in (A) and (C), the front end of the lead terminal 36 on the side of the storage space 32b has a wide portion. Figure 6 (A) and (C) of FIG. 3 show an example in which the wide portion is formed in the planar direction, but it may also be formed in the cross-sectional direction. Figure 6 As shown in (B), the mold member 52 has a tapered inclined surface 52a formed at the front end of the side not connected to the connecting member 51. Figure 6 (B) shows an example in which the inclined surface 52 a is formed in the planar direction, but the inclined surface 52 a may be formed in the cross-sectional direction. By forming the above shape, the lead terminal 36 is not easily pulled out of the frame body 31, and the mold member 52 is easily pulled out.

[0089] Although not shown, in the case of the lead terminals 33 to 35 mounted on the first lead region 32c side of the frame 31, another lead component is prepared, which only arranges the lead terminals 33 to 35 in a row and connects their ends to the connection component. On the other hand, a vent for exhausting gas from the storage space 3d can be formed on the first lead region 32c side. In this case, another lead component is prepared in which the mold member 52 corresponding to the vent and the lead terminals 33 to 35 are arranged in a row in parallel and their ends are connected to the connection component.

[0090] Next, the lead component 50 and another lead component are set in a housing mold having a mold formed inside thereof corresponding to the outer shape of the frame body 31, and the liquefied molding component is injected into the housing mold and filled into the housing mold. After the filled molding component solidifies, the housing mold is separated. Thus, a frame body 31 is obtained in which a storage opening 32a is formed on the back side, a storage space 32b is formed which is connected from the storage opening 32a to the front side, and a step is formed in the storage space 32b to form a step surface having a first lead area 32c and a second lead area 32d. In addition, as Figure 6 As shown in (C), the frame 31 is integrated with the lead component 50. The other lead component is also integrated on the opposite side of the frame 31 to the lead component 50. Then, the connecting component 51 is disconnected from the lead component 50 integrated with the frame 31. In this way, the lead terminal 36 and the mold component 52 are in a state of being independently bonded to the frame 31. And, as Figure 7 As shown in (A), all the mold members 52 are pulled out. At this time, if the mold members 52 are coated with a release agent and have an inclined surface 52a, the mold members 52 can be easily pulled out from the frame 31. After being pulled out in this way, Figure 7 As shown in FIG. 2 (B), openings corresponding to the shapes of the mold members 52 are formed in the frame 31 to constitute the gates 38 .

[0091] In the storage opening 32a of such a resin case 30, the semiconductor unit 20 which is pre-configured is mounted from the back side via the adhesive 26, with the front side on which the first semiconductor chip 21 and the second semiconductor chip 22 are mounted being the storage space 32b side. Thus, the first semiconductor chip 21 and the second semiconductor chip 22 of the semiconductor unit 20 are stored in the storage space 32b. In addition, the storage opening 32a is covered by the semiconductor unit 20. Then, the first semiconductor chip 21, the second semiconductor chip 22, the lead terminals 33 to 35 of the first lead area 32c, the control IC 37 and the lead terminals 36 of the second lead area 32d are electrically connected by wiring members such as wires (symbols omitted).

[0092] Next, use Figure 8 and Fig. 9 A sealing process of sealing the resin case 30 to which the semiconductor unit 20 is mounted will be described. Figure 8 and Fig. 9 It is a diagram for explaining a sealing step in the method for manufacturing a semiconductor device according to the second embodiment.

[0093] The sealing device 60 for performing the sealing process at least comprises a mounting surface 61, a heater 62, a groove 63, a plunger 64 and a flow channel 65. Figure 8As shown, the mounting surface 61 is arranged to face the resin case 30 on which the semiconductor unit 20 is mounted as a sealing object, and to face the front surfaces of the first semiconductor chip 21 and the second semiconductor chip 22. The resin case 30 is fixed to the mounting surface 61 by a fixing member 66. The fixing can be as follows: Figure 8 and Fig. 9 As shown, a fixing member 66 such as a screw is used. Alternatively, the fixing may be made by a die that presses the resin case 30 and the semiconductor unit 20 toward the mounting surface 61 and the flow channel 65. When the resin case 30 is set on the mounting surface 61 in this way, the gate 38 of the resin case 30 corresponds to the flow channel 65, respectively.

[0094] The heater 62 is disposed at the lower part of the mounting surface 61 to maintain the temperature of the groove 63 and the runner 65 at a constant temperature. Thus, the solidification of the sealing component formed by the softening of the sheet resin 41 is prevented. The sheet resin 41 is placed in the groove 63 before the start of sealing, and the sealing component formed by the softening of the sheet resin 41 is stored when the sealing starts. In addition, the groove 63 is connected to the runner 65 at the lower part. The plunger 64 is disposed at the opening of the groove 63 and supplies the softened sealing component in the groove 63 to the runner 65 as it is pressed. The runner 65 is respectively disposed corresponding to the gate 38 of the resin housing 30 mounted on the mounting surface 61. In such a runner 65, the sealing component pressed by the plunger 64 flows into the groove 63. In addition, the runner 65 supplies the flowing sealing component to the gate 38 of the resin housing 30 arranged on the mounting surface 61.

[0095] In the sealing device 60 having such a structure, first, as described above, the sheet-like resin 41 is placed in the groove 63. In addition, the resin case 30 with the semiconductor unit 20 mounted thereon is arranged on the mounting surface 61 so that the first semiconductor chip 21 and the second semiconductor chip 22 face the mounting surface 61, and the resin case 30 and the mounting surface 61 are fixed by the fixing member 66. The heater 62 is heated to soften the sheet-like resin 41 in the groove 63, and the softened sealing member is stored in the groove 63. Then, as shown in FIG. Fig. 9 As shown in FIG. 1 , when the plunger 64 is pressed, the sealing member 42 is filled into the housing space 32 b of the resin case 30 from the groove 63 via the runner 65 and the gate 38 of the resin case 30. Thus, when the sealing member 42 filled into the housing space 32 b and the gate 38 of the resin case 30 is solidified into the sealing member 40, the sealing device 60 is obtained. Figure 2 to Figure 5 A semiconductor device 10 is shown.

[0096] In such a method for manufacturing a semiconductor device 10, a frame 31 of a resin housing 30 surrounds a storage space 32b in which a first semiconductor chip 21 and a second semiconductor chip 22 are stored, and a gate 38 is formed on a side wall to communicate from the storage space 32b to an external space. By installing the semiconductor unit 20 in the storage opening 32a of such a resin housing 30, the first semiconductor chip 21 and the second semiconductor chip 22 are stored in the storage space 32b, and only the softened sealing member 42 is injected from the gate 38, so that the storage space 32b and the gate 38 can be sealed by the cured sealing member 40. Therefore, regardless of the type of the sealing member 40, it is not necessary to use a large and precise mold for sealing, so that the manufacturing cost can be reduced. For example, even if the sealing member 40 uses a sheet-like resin 41 with high moisture resistance, it is not necessary to perform transfer molding using a large and precise mold, so that the manufacturing cost can be suppressed, and a semiconductor device 10 with high moisture resistance can be easily obtained.

[0097] In addition, as described above, since the semiconductor device 10 manufactured in this way is not limited to the type of the sealing member 40, the moisture resistance and the like are improved by the sealing member 40. In addition, in the semiconductor device 10, the sealing member 40 seals the gate 38 in addition to the housing space 32b. Therefore, the sealing member 40 can firmly seal the semiconductor device 10.

[0098] In addition, the semiconductor device 10 is Figure 8 and Fig. 9 As shown in FIG. 1 , the sealing process is performed in a state where the front surfaces of the first semiconductor chip 21 and the second semiconductor chip 22 face the mounting surface 61. Therefore, the front surface of the semiconductor device 10 becomes flat, and no marble pattern or bubble mark is generated. Therefore, the semiconductor device 10 can improve the aesthetics and can reliably perform imprinting of a marking code or the like on the front surface.

Claims

1. A method for manufacturing a semiconductor device, characterized in that: include: A preparation step of preparing a substrate having a semiconductor chip disposed on a main surface and a resin casing, wherein the resin casing includes a box body surrounding a storage space for storing the semiconductor chip, an injection path connected from the storage space to an external space is formed on a side wall of the box body, and a first opening connected from the storage space to the external space is formed on a bottom surface of the box body; A mounting step of mounting the substrate in the first opening of the resin case and accommodating the semiconductor chip in the accommodating space; as well as a sealing step of injecting a sealing member from the injection path to seal the storage space, The injection path is formed in the housing in parallel with the main surface. The resin case further includes an external connection terminal, which is formed in parallel with the injection path, penetrates the side wall where the injection path is formed, and has one end disposed in the external space and the other end disposed in the storage space. In the preparation process, In a state where the mold removal component and the external connection terminal are integrated through the connecting component, the mold removal component and the external connection terminal are arranged in a housing mold, and a molding component is injected into the interior of the housing mold. solidifying the molded part and separating the housing mold, After the resin case including the case body, the mold-taking member and the external connection terminal respectively integrated with the case body is taken out from the case mold, Cut off the connecting part and extract the mold taking part, The resin case is formed.

2. The method for manufacturing a semiconductor device according to claim 1, wherein: The resin case has a second opening connected to the storage space on an upper surface opposite to the bottom surface. In the sealing step, the second opening is covered from the upper surface by a mold, and the housing space is sealed by a sealing member.

3. The method for manufacturing a semiconductor device according to claim 1, wherein: The resin case includes a substrate bonding area having a step around the first opening on the bottom surface. In the mounting step, the substrate is mounted on the substrate bonding region.

4. A semiconductor device, characterized in that: have: Semiconductor chips; a substrate having the semiconductor chip disposed on a main surface thereof; A resin case comprising a box body surrounding a storage space for storing the semiconductor chip, an injection path communicating from the storage space to an external space on a side wall of the box body, and a first opening communicating from the storage space to the external space on a bottom surface of the box body; as well as a sealing member that fills the housing space and the injection path of the resin case, The injection path is formed in the housing in parallel with the main surface. The resin case further includes an external connection terminal that penetrates a side wall formed with the injection path so as to be formed in parallel with the injection path, and has one end disposed in the external space and the other end disposed in the housing space.

5. The semiconductor device according to claim 4, wherein: The resin case has a second opening, the second opening communicating from the storage space to the external space at an upper surface facing the bottom surface. The sealing member is also filled up to the second opening.

6. The semiconductor device according to claim 4 or 5, characterized in that: The resin case includes a substrate bonding area having a step around the first opening on the bottom surface, and the substrate is arranged in the substrate bonding area.

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