Semiconductor devices

Abstract

The present invention provides a semiconductor device. It suppresses the operating cost of the mold and makes it easy to discharge bubbles during resin sealing. It includes: an insulating circuit substrate, a semiconductor element, a lead terminal, a wiring member, a shell, and a sealing resin, which is filled in the area defined by the shell to seal the insulating circuit substrate, the semiconductor element, the wiring member and the terminal part. In the lead terminal, the top of the terminal part protrudes from the inner side surface of the side wall of the shell along the upper surface direction of the semiconductor element, and the base of the lead part is buried in the side wall. An anchoring part is formed on the inner side surface of the side wall of the shell between the terminal part and the lead part. The anchoring part includes a recessed part or a protruding part arranged in the direction from the lower surface of the insulating plate toward the upper surface. A pair of opposite surfaces of the recessed part or the protruding part are parallel. One end of the wiring member is connected to the upper surface of the terminal part.

Description

Technical Field

[0001] The present invention relates to a semiconductor device. Background Art

[0002] The semiconductor device has a substrate provided with semiconductor elements such as IGBT (Insulated Gate Bipolar Transistor), power MOSFET (Metal Oxide Semiconductor Field Effect Transistor), and FWD (Free Wheeling Diode), and is used for converter devices, etc. This semiconductor device is formed by arranging the above-mentioned semiconductor elements on a metal foil formed on the surface of an insulating substrate. The semiconductor element is fixed to the metal foil by a bonding material such as solder. The insulating substrate and the semiconductor element are surrounded by a housing.

[0003] Generally, when an IGBT module is operating, the temperature of the semiconductor element increases. Therefore, as the operating time of the IGBT module increases, cracks are generated in the bonding material between the semiconductor element and the substrate and under the power terminal, and the deterioration of the wires bonded to the semiconductor element continues to progress. In order to prevent these situations, a technology for sealing the semiconductor element inside the housing with resin is proposed (for example, see Patent Document 1).

[0004] In Patent Document 1, in order to prevent the sealing resin from peeling off from the housing, a concavo-convex shape is provided on the inner surface of the housing. The concavo-convex shape is composed of a convex portion whose lateral width widens toward the inner side of the housing in the lateral direction and a concave portion whose lateral width widens toward the outer side of the housing in the lateral direction. Moreover, the lateral width of the concave portion widens toward the upper side of the housing in the longitudinal direction.

[0005] Patent Document 1: Japanese Patent Application Publication No. 2015-162649 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] However, in Patent Document 1, since the concavoconvex shape has an acute angle, the life of the housing mold is shortened and the running cost of the mold is increased. In addition, since the concave portion has a narrow portion, it is difficult to discharge bubbles when the sealing resin is filled.

[0008] The present invention has been made in view of this point, and one object of the present invention is to provide a semiconductor device which can reduce the running cost of the mold and facilitate the discharge of bubbles during resin sealing.

[0009] Solutions for solving problems

[0010] A technical solution of the present invention is a semiconductor device, which includes: an insulating circuit substrate, which includes an insulating plate having an upper surface and a lower surface, a first metal layer arranged on the upper surface, and a second metal layer arranged on the lower surface; a semiconductor element, which is arranged on the first metal layer by means of a bonding material; a lead terminal, which has a terminal portion on one end side and a lead portion on the other end side; a wiring member, which electrically connects the semiconductor element to the lead terminal; a housing, which has side walls arranged around the insulating circuit substrate and the semiconductor element; and a sealing resin, which is filled in an area defined by the housing. , the insulating circuit substrate, the semiconductor element, the wiring member and the terminal portion are sealed, in the lead terminal, the top end of the terminal portion protrudes from the inner side surface of the side wall of the shell along the upper surface direction of the insulating plate, the base of the lead portion is embedded in the side wall, and an anchoring portion is formed on the inner side surface of the side wall of the shell between the terminal portion and the lead portion, the anchoring portion includes a recessed portion or a convex portion arranged in a direction from the lower surface of the insulating plate toward the upper surface, and a pair of opposite surfaces of the recessed portion or the convex portion are specified to be parallel, and one end of the wiring member is connected to the upper surface of the terminal portion.

[0011] Effects of the Invention

[0012] According to the present invention, it is possible to easily discharge bubbles during resin sealing while suppressing the running cost of the mold. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 FIG. 1 is a schematic cross-sectional view showing an example of a semiconductor device according to this embodiment.

[0014] Figure 2A , Figure 2B It is a perspective view schematically showing the anchor portion according to the comparative example and the present embodiment.

[0015] Figure 3 It is a perspective view showing another example of the semiconductor device according to the present embodiment.

[0016] Figure 4A to Figure 4F It is a perspective view showing a change in the anchor portion according to a modified example.

[0017] Figure 5A It is a plan view showing another example of the semiconductor device according to this embodiment.

[0018] Figure 5B Observed from the y direction Figure 5A A schematic cross-sectional view of a semiconductor device is shown.

[0019] Figure 5C Observed from the x direction Figure 5A A schematic cross-sectional view of a semiconductor device is shown.

[0020] Figure 6 Yes means Figure 5A to Figure 5C A circuit diagram of a main circuit of a semiconductor device shown in FIG.

[0021] Description of Reference Numerals

[0022] 1. semiconductor device; 2. insulating circuit substrate; 3. semiconductor element; 4. anchoring portion; 10. bottom plate; 11. housing (casing); 11a. side wall; 12. bottom wall; 12a. inner side surface; 13. longitudinal wall; 13a. inner side surface; 14. anchoring portion; 15. lead terminal; 15a. terminal portion; 15b. lead portion; 16. sealing resin; 17. recess; 17a. opposite surface; 17b. inner side surface; 18. convex portion; 18a. side surface; 19a. second recess; 19b. second convex portion; 20. insulating plate; 21. first metal layer; 22. second metal layer; 40. recess; 40a. opposite surface; 40b. inner side surface; 41. convex portion; 41a. side surface; 42. narrow portion; B. air bubble; F. chamfered portion; S. bonding material; W1. wiring member; W2. wiring member. DETAILED DESCRIPTION

[0023] Hereinafter, a semiconductor device to which the present invention can be applied will be described. Figure 1 1 is a schematic cross-sectional view showing an example of a semiconductor device according to the present embodiment. The semiconductor device shown below is just an example and is not limited thereto but can be modified as appropriate.

[0024] The semiconductor device 1 is applied to a power conversion device such as a power module, for example. Figure 1 As shown, the semiconductor device 1 includes an insulating circuit substrate 2 and a semiconductor element 3 arranged on the upper surface of the insulating circuit substrate 2. The semiconductor device 1 also includes a housing 11 surrounding the insulating circuit substrate 2 and the semiconductor element 3. In addition, the semiconductor device 1 may also include a base plate 10. The base plate 10 has, for example, a rectangular shape when viewed from above, and is formed of a metal plate such as copper. For example, a plating process is applied to the surface of the base plate 10. The base plate 10 may also have a heat sink for cooling. The semiconductor device 1 may also have a cooler including a base plate, a heat sink, and a jacket instead of the base plate 10.

[0025] The insulating circuit substrate 2 is formed by stacking metal layers and insulating layers, and is formed into a rectangular shape in a plan view that is smaller than the upper surface of the base plate 10. Specifically, the insulating circuit substrate 2 includes: an insulating plate 20 including an upper surface (one side surface) and a lower surface (the other side surface) on the side opposite to the upper surface; a first metal layer 21 disposed on the upper surface of the insulating plate 20; and a second metal layer 22 disposed on the lower surface of the insulating plate 20. The thickness of the insulating plate 20, the thickness of the first metal layer 21, and the thickness of the second metal layer 22 may be the same or different.

[0026] The insulating plate 20 is formed of an insulator such as ceramic, and the first metal layer 21 and the second metal layer 22 are formed of, for example, copper foil. The first metal layer 21 constitutes a circuit layer electrically connected to the semiconductor element. The first metal layer 21 has a plane and has a substantially entire rectangular shape in plan view that covers the upper surface of the insulating plate 20. Specifically, the outer edge of the first metal layer 21 is located slightly inside the outer edge of the insulating plate 20. In addition, a circuit pattern constituting a circuit may be provided in the first metal layer 21. The first metal layer 21 may include a plurality of metal layers.

[0027] The second metal layer 22 has a flat surface and has a substantially entire square shape in plan view that covers the lower surface of the insulating plate 20 . Specifically, the outer edge of the second metal layer 22 is located slightly inside the outer edge of the insulating plate 20 .

[0028] The insulating circuit substrate 2 thus constructed may be, for example, a DCB (Direct Copper Bonding) substrate or an AMB (Active Metal Brazing) substrate. Furthermore, the insulating plate 20 may be formed using ceramic materials such as aluminum oxide (Al2O3), aluminum nitride (AlN), and silicon nitride (Si3N4). The insulating circuit substrate 2 may be disposed at the center of the upper surface of the base plate 10. Thus, an annular space is formed at the outer peripheral portion of the upper surface of the base plate 10.

[0029] A semiconductor element 3 is arranged on the upper surface of the first metal layer 21 of the insulating circuit substrate 2. The semiconductor element 3 is formed of a semiconductor substrate such as silicon (Si) or silicon carbide (SiC). The semiconductor element 3 is, for example, rectangular in plan view. Two semiconductor elements 3 are arranged in a longitudinal direction with respect to one first metal layer 21. The semiconductor elements 3 are respectively arranged on the first metal layer 21 by means of a bonding material S such as solder. Thus, the semiconductor element 3 is electrically connected to the first metal layer 21.

[0030] In addition, as the semiconductor element 3, a switching element such as an IGBT (Insulated Gate Bipolar Transistor), a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor), or a diode such as a FWD (Free Wheeling Diode) is used. Furthermore, as the semiconductor element 3, an RC (Reverse Conducting)-IGBT in which an IGBT and a FWD are integrated, or an RB (Reverse Blocking)-IGBT having sufficient resistance to reverse bias voltage, etc. may be used.

[0031] The two semiconductor elements 3 are electrically connected to each other by the wiring member W1. Each semiconductor element 3 is electrically connected to a lead terminal 15 described later via the wiring member W2.

[0032] In addition, each of the above wiring components uses a conductive wire. The conductive wire can be made of any one of gold, copper, aluminum, gold alloy, copper alloy, and aluminum alloy, or a combination thereof. Furthermore, as a wiring component, a component other than a conductive wire can also be used. For example, a ribbon can be used as a wiring component.

[0033] The housing 11 is a shell for accommodating the insulating circuit substrate 2 and the semiconductor element 3. The housing 11 includes a side wall 11a that forms a frame shape when viewed from above. The side wall 11a is arranged around the insulating circuit substrate 2 and the semiconductor element 3, and defines an area filled with a sealing resin 16 described later. The side wall 11a of the housing 11 may include an annular bottom wall portion 12 that surrounds the outer peripheral side of the insulating circuit substrate 2 and a vertical wall portion 13 that extends upward from the upper surface of the bottom wall portion 12. The housing 11 is formed of, for example, a synthetic resin. The housing 11 may be molded of, for example, a resin such as polyphenylene sulfide (PPS). In addition to PPS, the resin used for the housing 11 may be selected from insulating resins such as polybutylene terephthalate (PBT), polybutyl acrylate (PBA), polyamide (PA), acrylonitrile-butadiene-styrene (ABS), liquid crystal polymer (LCP), polyetheretherketone (PEEK), polybutylene succinate (PBS), polyurethane, and silicon. Furthermore, the selected resin may be a mixture of two or more resins. The resin may contain a filler (eg, a glass filler) for improving strength and / or functionality.

[0034] The bottom wall portion 12 is formed into a four-sided ring shape in a plan view corresponding to the shape of the bottom plate 10. The bottom wall portion 12 is arranged on the upper surface of the bottom plate 10 at the outer periphery of the insulating circuit substrate 2. The outer side surface of the bottom wall portion 12 is connected to the outer edge of the bottom plate 10. The inner side surface 12a of the bottom wall portion 12 is provided at a position with a gap relative to the outer edge of the insulating plate 20. Moreover, the upper surface of the bottom wall portion 12 is substantially parallel to the upper surface of the insulating plate 20, and is provided at a position higher than the upper surface of the semiconductor element 3 on the insulating circuit substrate 2.

[0035] The longitudinal wall portion 13 rises upward from the outer edge of the bottom wall portion 12 in the direction from the lower surface to the upper surface of the insulating plate 20 along the side wall 11a. The lateral thickness of the longitudinal wall portion 13 is smaller than the lateral thickness of the bottom wall portion 12. More specifically, the outer side surface of the longitudinal wall portion 13 is connected to the outer side surface of the bottom wall portion 12, and the inner side surface 13a of the longitudinal wall portion 13 is located at a position further outward than the inner side surface 12a of the bottom wall portion 12. The inner side surface 13a of the longitudinal wall portion 13 and the upper surface of the bottom wall portion 12 may be substantially orthogonal. An anchor portion 14 is formed on the inner side surface 13a of the longitudinal wall portion 13 between the longitudinal wall portion 13 and the bottom wall portion 12, which will be described in detail later. In addition, the longitudinal wall portion 13 may be raised in a four-sided ring shape in a plan view similar to the bottom wall portion 12, or may be in a shape that partially rises from the upper surface of the bottom wall portion 12. In the housing 11 , the vertical wall portion 13 may be provided by integral molding together with the lead terminal 15 , or may be provided by two-color molding.

[0036] like Figure 1 As shown, the cross section of the housing 11 including the bottom wall 12 and the vertical wall 13 is formed into an L-shaped shape. The housing 11 thus constructed has the lower surface of the bottom wall 12 facing the upper surface of the bottom plate 10 and bonded by, for example, an adhesive (not shown).

[0037] Furthermore, a lead terminal 15 is embedded in the vertical wall portion 13 and the bottom wall portion 12 as an external terminal. The lead terminal 15 can be integrated with the housing 11 by insert molding. The lead terminal 15 has a terminal portion 15a on one end side and a lead portion 15b on the other end side. On the inner side of the housing 11, the terminal portion 15a extends in a direction parallel to the upper surface of the insulating plate 20. The terminal portion 15a can be in the shape of a flat plate. The lead portion 15b stands up from the end of the terminal portion 15a in a direction perpendicular to the upper surface of the insulating plate 20. The shape of the lead terminal 15 can be in the shape of the letter L in cross-section.

[0038] The terminal portion 15a as one end side of the lead terminal 15 has a flat plate shape along the surface direction of the semiconductor element 3, and extends from the base end of the vertical wall portion 13 toward the inner side of the housing 11. The terminal portion 15a has a predetermined thickness in the thickness direction of the semiconductor element 3. In addition, a portion of the terminal portion 15a is embedded in the bottom wall portion 12. Specifically, the terminal portion 15a is embedded in the bottom wall portion 12 in a manner that the upper surface is exposed relative to the bottom wall portion 12, and a portion of the lower surface and the side surface are embedded in the bottom wall portion 12. One end of the wiring member W2 is connected to the upper surface of the exposed terminal portion 15a. In addition, the top end of the terminal portion 15a slightly protrudes from the inner side surface 12a of the bottom wall portion 12.

[0039] The lead portion 15b, which is the other end side of the lead terminal 15, is connected to the outer end of the terminal portion 15a and is bent so as to stand upward from the base end of the vertical wall portion 13 (see Figure 3 ). Most of the lead portion 15b that stands upward is embedded in the vertical wall portion 13. Moreover, the upper end of the lead portion 15b, which is the top end, protrudes from the upper surface of the vertical wall portion 13 by a predetermined length. In addition, the cross section of the lead portion 15b can be polygonal or circular. Moreover, the lead portion 15b can be a press fit pin.

[0040] In addition, Figure 1 In the embodiment, two lead terminals 15 are arranged opposite to each other with the semiconductor element 3 interposed therebetween, but the number of lead terminals 15 is not limited thereto and can be changed as appropriate. The lead terminal 15 may be one or more lead terminals 15 as described below. Figure 3 As shown, a plurality of them are arranged in a circumferential direction of the semiconductor device 1 .

[0041] The internal space of the housing 11 defined by the side wall 11a is sealed with a sealing resin 16. Specifically, the sealing resin 16 seals the insulating circuit substrate 2, the semiconductor element 3, the wiring members W1, W2, and the terminal portion 15a on the inner side of the housing 11. The sealing resin 16 can be made of epoxy resin or silicone gel. The sealing resin 16 can be filled in the housing 11 to a position higher than the anchor portion 14 described later, and cover the anchor portion 14. The upper surface and the lower surface of the top of the terminal portion 15a can be fixed with the sealing resin 16.

[0042] In addition, as shown in the above-mentioned semiconductor device, the temperature of the semiconductor element rises in accordance with the operation of the device. In order to prevent the wiring member and the bonding material from deteriorating due to long-term operation, a technology of sealing the inside of the case with a sealing resin has been proposed.

[0043] In such a structure, the sealing resin expands and contracts due to the long-term operation of the semiconductor device. As a result, it is conceivable that shear stress is generated at the connection part of the wiring member and the bonding material, and the connection part is separated. Therefore, the sealing resin uses an epoxy material whose linear expansion coefficient is relatively close to that of semiconductor elements such as silicon.

[0044] However, since there is a large difference in linear expansion coefficient between the material of the housing and the sealing resin, other problems may arise, such as the sealing resin peeling off from the housing due to heat generation of the semiconductor element and thermal cycles caused by changes in the external environment. Therefore, the reliability of the semiconductor device may be reduced due to moisture absorption from the gaps caused by the wiring member being cut. Therefore, measures such as providing a concave-convex shape on the surface of the component in the expectation of an anchoring effect are taken to suppress the peeling between the housing and the sealing resin.

[0045] Reference Figure 2A , Figure 2B This countermeasure will be described. Figure 2A , Figure 2B Schematically shows a perspective view of the anchoring portion according to the comparative example and the present embodiment. Figure 2A is a perspective view of an anchor portion according to a comparative example. Figure 2B It is a perspective view of the anchor portion according to the present embodiment.

[0046] like Figure 2A As shown, the anchor 4 of the comparative example is composed of a concave-convex shape provided on the inner surface of the housing. Specifically, the anchor 4 is composed of alternately arranged concave portions 40 and convex portions 41 extending in the longitudinal direction. The concave portions 40 and convex portions 41 are alternately arranged in the circumferential direction of the housing.

[0047] The lateral width of the recess 40 (the circumferential width of the housing (also referred to as the left-right width)) increases as it goes from the inside of the housing to the outside. Furthermore, the recess 40 is wedge-shaped, and the lateral width of the recess 40 increases as it goes from the bottom to the top in the longitudinal direction of the housing.

[0048] On the other hand, the lateral width (the width in the circumferential direction of the housing) of the convex portion 41 becomes narrower from the inside to the outside of the housing. Furthermore, the lateral width of the convex portion 41 becomes narrower from the bottom to the top in the longitudinal direction of the housing.

[0049] That is, a pair of opposing surfaces 40a defining the recess 40 or the protrusion 41 are arranged to be inclined with respect to each other. The pair of opposing surfaces 40a are opposed in the circumferential direction of the housing, that is, in the width direction of the recess 40 or the protrusion 41. Moreover, the ends of the pair of opposing surfaces 40a closer to the outer side of the housing are connected to the inner side surface 40b of the recess 40.

[0050] Therefore, acute angles are formed at the corners of the concave portion 40 and the corners of the convex portion 41. Specifically, the angle formed by the opposing surface 40a and the inner side surface 40b is an acute angle. Furthermore, the angle formed by the side surface 41a of the convex portion 41 and the opposing surface 40a is also an acute angle.

[0051] Thus, if there is an acute angle portion in the housing, the mold for molding the housing also has an acute angle portion, which increases the wear and tear of the mold and increases the running cost of the mold. Figure 2A As shown, a narrow portion 42 is formed at the lower end of the recess 40. Therefore, when the housing is filled with sealing resin, bubbles B at the bottom of the housing may be blocked by the narrow portion 42 and become difficult to be discharged upward.

[0052] Therefore, the inventors of the present application focused on the shape of the anchoring portion for obtaining the anchoring effect of the sealing resin in order to reduce the running cost of the mold and facilitate the discharge of bubbles during resin sealing, thereby completing the present invention.

[0053] like Figure 2B As shown, the anchoring portion 14 involved in this embodiment is composed of a concave-convex shape provided on the inner surface of the housing 11 (not shown). Specifically, the anchoring portion 14 is composed of alternately arranged concave portions 17 and convex portions 18 extending longitudinally. The concave portions 17 and convex portions 18 are alternately arranged in the circumferential direction of the housing.

[0054] The lateral width (circumferential width of the housing (also referred to as horizontal width)) of the recess 17 is the same from the inside to the outside of the housing. Furthermore, the lateral width of the recess 17 is also the same from the bottom to the top in the longitudinal direction of the housing.

[0055] Similarly, the lateral width (the width in the circumferential direction of the housing) of the convex portion 18 is the same from the inside to the outside of the housing. Furthermore, the lateral width of the convex portion 18 is also the same from the bottom to the top in the longitudinal direction of the housing.

[0056] That is, a pair of opposing surfaces 17a defining the recess 17 or the protrusion 18 are arranged in parallel with each other. The pair of opposing surfaces 17a are opposed in the circumferential direction of the housing, that is, in the width direction of the recess 17 or the protrusion 18. Moreover, the ends of the pair of opposing surfaces 17a closer to the outer side of the housing are connected to the inner side surface 17b of the recess 17.

[0057] According to these structures, no acute angle is formed at the corner of the concave portion 17 and the corner of the convex portion 18. Specifically, the angle formed by the opposing surface 17a and the inner side surface 17b is a right angle. In addition, the angle formed by the side surface 18a of the convex portion 18 and the opposing surface 17a is also a right angle.

[0058] Therefore, no sharp corners are formed in the mold for molding the housing, and the wear of the mold can be reduced and the service life can be extended. As a result, the increase in running costs can be suppressed. In addition, since there is no narrow portion at the lower end of the recess 17, when the housing 11 is filled with sealing resin, the bubbles B at the bottom of the housing can be easily discharged smoothly from the recess 17.

[0059] Thus, in this embodiment, the pair of opposing surfaces 17a of the concave portion 17 or the convex portion 18 constituting the anchor portion 14 are set to be parallel. Figure 1 ) and the inner surface of the housing 11 to ensure the anchoring effect, and can suppress the running cost of the mold and make it easy to discharge bubbles during resin sealing.

[0060] Next, refer to Figure 3 The layout of the anchoring portion will be described in detail. Figure 3 FIG. 1 is a perspective view showing another example of the semiconductor device according to the present embodiment. Figure 3 In the figure, the width direction of the semiconductor device is defined as the x direction, the depth direction is defined as the y direction, and the height direction is defined as the z direction. The x, y, and z axes shown in the figure are orthogonal to each other, forming a right-handed system. For the convenience of explanation, the x direction may be referred to as the left-right direction, the y direction may be referred to as the front-back direction, and the z direction may be referred to as the up-down direction or the longitudinal direction. These terms may change the correspondence between the directions in the xyz directions depending on the installation posture of the semiconductor device relative to the external device. Moreover, in this specification, a top view refers to the situation of observing the upper surface of the semiconductor device from the positive direction of the z-axis. Moreover, Figure 3 The semiconductor device shown has Figure 1 and Figure 2B The anchoring portion shown has basically the same structure, relative to Figure 1 and Figure 2B Therefore, the same reference numerals are used to represent the structures that have been described, and the description of the common structures is appropriately omitted.

[0061] like Figure 3As shown, three lead terminals 15 are arranged in a lateral (circumferential) direction along the longitudinal wall portion 13. Furthermore, the anchoring portion 14 is composed of a recess 17 and a protrusion 18 formed on the inner side surface 13a of the longitudinal wall portion 13. Three protrusions 18 are arranged in a manner corresponding to the lead terminals 15. Specifically, one protrusion 18 is arranged for each lead terminal 15. Furthermore, the protrusion 18 is arranged in a manner opposite to the portion of the lead portion 15b buried in the longitudinal wall portion 13. In the anchoring portion 14, the recess 17 may include a bottom surface connected to the opposite surface 17a in the middle of a pair of opposite surfaces 17a and parallel to the upper surface of the insulating plate 20. The protrusion 18 may include an upper surface connected to the opposite surface 18a between the pair of opposite surfaces 18a and parallel to the upper surface of the insulating plate 20.

[0062] That is, the convex portion 18 is disposed between the lead portion 15b that rises in the height (z) direction and the connection portion of the wiring member W2 with respect to the terminal portion 15a in a plan view. In this way, by providing the anchor portion 14 according to the position of the lead terminal 15, the sealing resin 16 near the lead terminal 15 (especially the terminal portion 15a) can be further improved (see Figure 1 As a result, it is possible to effectively prevent the wiring member W2 from being deteriorated at the connection portion between the terminal portion 15a and the wiring member W2.

[0063] Moreover, if Figure 3 As shown, the top end of the terminal portion 15a protrudes slightly toward the inner side (semiconductor element 3) of the housing than the inner side surface 12a of the bottom wall portion 12. For example, when the housing 11 is filled with the sealing resin 16, the peeling of the sealing resin 16 caused by the thermal cycle can also start from the bottom of the housing 11.

[0064] As described above, the top end of the terminal portion 15a protrudes from the bottom wall portion 12, so even if the sealing resin 16 peels off below the terminal portion 15a, the peeling will be blocked on the lower surface side of the top end of the terminal portion 15a. Therefore, the peeling of the sealing resin 16 will not develop to the connection portion between the terminal portion 15a and the wiring member W2. That is, by suppressing the development of the peeling by the top end of the terminal portion 15a, the connection portion between the terminal portion 15a and the wiring member W2 can be protected. In addition, the upper surface of the top end of the terminal portion 15a can be arranged substantially parallel to the bottom surface of the recess 17 or the upper surface of the protrusion 18 more effectively.

[0065] As described above, according to this embodiment, by making the pair of opposing surfaces 17a defining the concave portion 17 or the convex portion 18 constituting the anchoring portion 14 parallel, the mold for the housing 11 can be made into a simple structure of upper and lower divisions, which can reduce the wear of the mold and suppress the running cost. In addition, the anchoring effect of the sealing resin 16 can be improved and the ease of air bubble discharge during sealing can be improved.

[0066] Next, refer to Figure 4A to Figure 4F An anchor portion according to a modified example will be described. Figure 4A to Figure 4F It is a perspective view showing a change in the anchor portion according to a modified example.

[0067] For example, Figure 4A As shown in FIG. 1 , an R-shaped chamfered portion F may be formed at the corner of the recess 17. Figure 4B As shown, a chamfered portion F may be formed at the corner of the upper end of the projection 18. By forming the chamfered portion F, the wear of the die can be reduced, and the running cost can be suppressed.

[0068] Moreover, if Figure 4C As shown in FIG. 1 , a second concave portion 19a smaller than the convex portion 18 may be formed on the upper surface of the convex portion 18. Figure 4D As shown, a second recess 19a smaller than the recess 17 may be formed on the bottom surface of the recess 17. The second recess 19a is formed, for example, in a rectangular shape when viewed from above. Furthermore, a plurality of second protrusions 19b may be formed on the bottom surface of a recess 17. The second protrusion 19b protrudes upward from the bottom surface of the recess 17, for example, and has a rectangular shape when viewed from above. Furthermore, a plurality of second recesses 19a may be formed on the bottom surface of a recess 17. The second recess 19a has, for example, a rectangular shape when viewed from above. By forming the second recess 19a or the second protrusion 19b, the contact area of ​​the sealing resin 16 (not shown) can be increased, and the anchoring effect can be further improved.

[0069] Furthermore, in the above-described embodiment, two semiconductor elements 3 are arranged with respect to one first metal layer 21, but the present invention is not limited to this structure. The number of semiconductor elements 3 may be one or three or more.

[0070] Furthermore, in the above-described embodiment, the semiconductor element 3 is formed in a square shape in plan view, but the present invention is not limited to this structure and the semiconductor element may be formed in a polygonal shape other than a rectangular shape.

[0071] Moreover, in the above-mentioned embodiment, the shape, number, arrangement position, and arrangement pitch of the recessed portion 17 or the convex portion 18 constituting the anchoring portion 14 can be appropriately changed. The second recessed portion 19a and the second convex portion 19b are also the same. In particular, the shape of the recessed portion and the convex portion in a plan view is not limited to a rectangular shape, but may also be formed by a circular, triangular, or pentagonal or higher polygon.

[0072] Furthermore, in the above-described embodiment, the anchor portion 14 is configured by both the recessed portion 17 and the convex portion 18 , but the present invention is not limited to this configuration. The anchor portion 14 may be configured by only one of the recessed portion 17 and the convex portion 18 .

[0073] Furthermore, in the above-mentioned embodiment, Figure 3 In the above description, the structure in which three lead terminals 15 are arranged side by side is described, but the present invention is not limited to this structure. The number of lead terminals 15 arranged can be changed as appropriate.

[0074] Furthermore, in the above-described embodiment, a case where one protrusion 18 is arranged for one lead terminal 15 is described, but the present invention is not limited to this structure. As described above, the number of protrusions 18 arranged and the arrangement pitch can be changed as appropriate.

[0075] Furthermore, in the above-mentioned embodiment, the chamfered portion F can be formed at any position. FIG. 4C to FIG. 4F In the modified example, the chamfered portion F may be appropriately formed.

[0076] Next, refer to FIG. 5A to FIG. 6 Another example of the semiconductor device according to this embodiment will be described. Figure 5A is a top view of the semiconductor device 1, Figure 5B is a cross-sectional diagram viewed from the y direction, Figure 5C It is a schematic cross-sectional view viewed from the x direction. Figure 6 Yes means Figure 5A to Figure 5C A circuit diagram of a main circuit of the semiconductor device 1 is shown. Figure 5A to Figure 5C The various structures of the semiconductor device 1 shown are Figure 1 , Figure 3 The structures of the semiconductor devices shown are substantially the same, and therefore, the same reference numerals are attached to the structures having the same names and are described.

[0077] like Figure 5A to Figure 5C As shown, similar to the previous embodiments, the semiconductor device 1 includes an insulating circuit substrate 2, semiconductor elements 3 (3p, 3n), lead terminals 15, wiring members W2, a housing 11, and a sealing resin 16. The semiconductor device 1 may further include a base plate 10.

[0078] The insulating circuit substrate 2 is formed by stacking the second metal layer 22, the insulating plate 20, and the first metal layer 21 in order in the z direction. The insulating plate 20 has an upper surface and a lower surface parallel to the xy plane. The first metal layer 21 is arranged on the upper surface of the insulating plate 20, and the second metal layer 22 is arranged on the lower surface of the insulating plate 20. In addition, the insulating circuit substrate 2 can also be bonded to the base plate 10 using a bonding material such as solder or brazing material. Moreover, the first metal layer 21 can include a plurality of metal layers and have a circuit pattern.

[0079] The semiconductor element 3 (3p, 3n) has an upper surface and a lower surface. The semiconductor element 3 may have an upper surface electrode 301 such as an emitter electrode and a source electrode and a control electrode 302 on the upper surface side, and a lower surface electrode such as a collector electrode and a drain electrode on the lower surface side. The semiconductor element 3 may be bonded to the first metal layer 21 using a bonding material such as solder or a sintered material. The control electrode 302 may be electrically connected to an external control circuit via a wiring member W2 and a lead terminal 15. The semiconductor element 3 may be a switching element such as a MOSFET, an IGBT, or an RC-IGBT.

[0080] The lead terminal 15 has a terminal portion 15a at one end thereof and a lead portion 15b at the other end. The terminal portion 15a and the lead portion 15b can be separated and connected in the housing 11. The housing 11 can be a housing formed by connecting the terminal portion 15a provided on the printed circuit board 303 and the lead portion 15b provided on the block-shaped vertical wall portion 13 to form an integral body. The top end of the terminal portion 15a and the top end of the printed circuit board 303 protrude from the inner side surface of the side wall 11 of the housing 11 in the negative y direction.

[0081] The terminal portion 15a and the printed circuit board 303 may be arranged in the housing 11 in such a manner that the upper surface of the terminal portion 15a and the upper surface of the printed circuit board 303 are exposed from the bottom wall 12. The base of the lead portion 15b may be embedded in the vertical wall portion 13, and the top end thereof may be inserted into a hole (not shown) of the printed circuit board 303. The printed circuit board 303 may be formed by forming wiring such as copper foil on a resin plate such as epoxy or phenolic, or a ceramic plate such as alumina. The terminal portion 15a and the control electrode 302 of the semiconductor element 3 are electrically connected by a wiring member W2.

[0082] The housing 11 is a frame having a side wall 11a disposed around the insulating circuit substrate 2 and the semiconductor element 3. The sealing resin 16 is filled in the area defined by the side wall 11a of the housing 11 to seal the insulating circuit substrate 2, the semiconductor element 3, the wiring member W2, and the terminal portion 15a. An anchor portion is formed on the inner side surface of the side wall 11a of the housing 11 and between the terminal portion 15a and the lead portion 15b.

[0083] The anchoring portion 14 includes a concave portion 17 and a convex portion 18. The concave portion 17 and the convex portion 18 are arranged in the z direction. The concave portion 17 includes a pair of opposite surfaces 17a that define its shape. The convex portion 18 includes a pair of opposite surfaces 18a that define its shape. The opposite surfaces 17a and the opposite surfaces 18a are substantially parallel to each other and can be parallel to the z direction. The concave portions 17 and the convex portions 18 can be arranged alternately, and adjacent concave portions 17 and convex portions 18 can share the opposite surfaces 17a and 18a.

[0084] The recess 17 may have an opening disposed toward the positive z direction and an opening disposed toward a direction parallel to the xy plane. The recess 17 may have a bottom surface connected to the opposite surface 17a in the negative z direction. The sealing resin 16 covering the recess 17 of such a shape and the upper and lower surfaces of the terminal portion 15a fixes and protects the joint between the terminal portion 15a and the wiring member W2. This effect is significant when the printed circuit board 303 provided with the terminal portion 15a is used.

[0085] The semiconductor device 1 may further include input terminals P and N for connecting to a power source and an output terminal U for connecting to a load. Figure 6 As shown, the terminals P, N, U, the first metal layer 21, the semiconductor elements 3p, 3n, and the wiring member W3 may be electrically connected so as to constitute a leg having upper and lower arms.

[0086] Furthermore, although the present embodiment and the modified examples have been described, another embodiment may be an embodiment in which the above-described embodiment and the modified examples are combined in whole or in part.

[0087] Moreover, the present embodiment is not limited to the above-mentioned embodiment and variant examples, and various changes, substitutions, and deformations can be made within the scope of the main purpose of the technical idea. In addition, if the progress of technology or other derived technologies can realize the technical idea in other ways, then the method can also be used for implementation. Therefore, the technical solution covers all the embodiments that can be included in the scope of the technical idea.

[0088] The characteristic points of the above-mentioned embodiments are summarized below.

[0089] The semiconductor device described in the above embodiment includes: an insulating circuit substrate, which includes an insulating plate having an upper surface and a lower surface, a first metal layer arranged on the upper surface, and a second metal layer arranged on the lower surface; a semiconductor element, which is arranged on the first metal layer by means of a bonding material; a lead terminal, which has a terminal portion on one end side and a lead portion on the other end side; a wiring member, which electrically connects the semiconductor element to the lead terminal; a housing, which has side walls arranged around the insulating circuit substrate and the semiconductor element; and a sealing resin, which is filled in an area defined by the housing to seal the semiconductor element. The insulating circuit substrate, the semiconductor element, the wiring member and the terminal portion are sealed, in which the top end of the terminal portion protrudes from the inner side surface of the side wall of the shell along the upper surface direction of the insulating plate, and the base of the lead portion is embedded in the side wall. An anchor portion is formed on the inner side surface of the side wall of the shell between the terminal portion and the lead portion, and the anchor portion includes a recessed portion or a convex portion arranged in a direction from the lower surface of the insulating plate toward the upper surface, and a pair of opposite surfaces of the recessed portion or the convex portion are defined to be parallel, and one end of the wiring member is connected to the upper surface of the terminal portion.

[0090] Moreover, in the semiconductor device involved in the above-mentioned embodiment, the shell has a bottom wall portion in which a portion of one end side of the lead terminal is buried, at least a portion of one end side of the lead terminal protrudes from the bottom wall portion, and the upper surface of one end side of the lead terminal is exposed relative to the bottom wall portion.

[0091] Furthermore, in the semiconductor device according to the above embodiment, chamfered portions are formed at corners of the recessed portion or corners of the raised portion.

[0092] Furthermore, in the semiconductor device according to the above embodiment, the anchor portion has a second recessed portion or a second convex portion that is smaller than the recessed portion or the convex portion.

[0093] Furthermore, in the semiconductor device according to the above embodiment, the upper surface and the lower surface of the tip of the terminal portion are fixed by the sealing resin.

[0094] Furthermore, in the semiconductor device according to the above embodiment, the recess has an opening provided in a direction from a lower surface toward an upper surface of the insulating plate and an opening provided in a direction parallel to the upper surface of the insulating plate.

[0095] Furthermore, in the semiconductor device according to the above embodiment, the sealing resin covers the recessed portion.

[0096] Industrial Applicability

[0097] As described above, the present invention has the effects of reducing the running cost of the mold and facilitating the discharge of bubbles during resin sealing, and is particularly useful for semiconductor devices.

Claims

1. A semiconductor device comprising: An insulating circuit substrate comprising an insulating plate having an upper surface and a lower surface, a first metal layer disposed on the upper surface, and a second metal layer disposed on the lower surface; A semiconductor element, which is arranged on the first metal layer by means of a bonding material; A lead terminal having a terminal portion at one end and a lead portion at the other end; a wiring member that electrically connects the semiconductor element and the lead terminal; a housing having side walls disposed around the insulating circuit substrate and the semiconductor element; as well as a sealing resin which is filled in the area defined by the housing to seal the insulating circuit substrate, the semiconductor element, the wiring member, and the terminal portion; In the lead terminal, the top end of the terminal portion protrudes from the inner side surface of the side wall of the housing along the upper surface direction of the insulating plate, and the base of the lead portion is embedded in the side wall. An anchoring portion is formed on an inner side surface of a side wall of the housing between the terminal portion and the lead portion. The anchor portion includes a convex portion and a concave portion arranged in a direction from the lower surface toward the upper surface of the insulating plate, and a pair of opposing surfaces defining the convex portion and the concave portion are parallel. One end of the wiring member is connected to the upper surface of the terminal portion, The protrusion is disposed between the lead portion and a connection site, which is a connection site between the wiring member and the terminal portion, in a plan view.

2. The semiconductor device according to claim 1, wherein The housing has a bottom wall portion in which a portion of one end side of the lead terminal is embedded. At least a portion of one end side of the lead terminal protrudes from the bottom wall portion, and an upper surface of the one end side of the lead terminal is exposed relative to the bottom wall portion.

3. The semiconductor device according to claim 1 or 2, wherein: Chamfered portions are formed at corners of the concave portion or corners of the convex portion.

4. The semiconductor device according to claim 1 or 2, wherein: The anchor portion has a second recessed portion or a second convex portion that is smaller than the recessed portion or the convex portion.

5. The semiconductor device according to claim 3, wherein: The anchor portion has a second recessed portion or a second convex portion that is smaller than the recessed portion or the convex portion.

6. The semiconductor device according to claim 1, wherein The upper surface and the lower surface of the tip of the terminal portion are fixed by the sealing resin.

7. The semiconductor device according to claim 1, wherein The recess has an opening provided in a direction from a lower surface toward an upper surface of the insulating plate and an opening provided in a direction parallel to the upper surface of the insulating plate.

8. The semiconductor device according to claim 1, wherein The sealing resin covers the recessed portion.

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