A single-chip integrated high-voltage PMOS tube driver

Abstract

The present invention relates to the technical field of integrated circuits, and more specifically to a single-chip integrated high-voltage PMOS tube driver, which is convenient for meeting the miniaturization, high reliability and high performance requirements of a T / R component system; an input modulated TTL signal is connected to a logic control delay module U3 after passing through a TTL module U1, and a negative voltage power-off detection module U2 is also connected to the logic control delay module U3; the logic control delay module U3 outputs a HI signal for driving a high-side level shift module U4, and simultaneously outputs a LI signal for driving a low-side drive module U6; the LI signal is output to a gate of an NMOS tube after passing through the low-side drive module U6; the HI signal is input to a high-side drive module U5 after passing through a high-side level shift module U4; a power supply VCC outputs internal voltages V1 and VB through an internal voltage generation module U7.

Description

Technical Field

[0001] The invention relates to the technical field of integrated circuits, and in particular to a single-chip integrated high-voltage PMOS tube driver. Background Art

[0002] As the application market pays more and more attention to energy efficiency and pursues high-performance and low-cost electronic products, the consideration of device and even system efficiency, performance, and cost in the power electronics field will run through the entire process of power semiconductors from R&D to production. There is no doubt that GaN devices and their power systems will meet the performance requirements of future power electronics in terms of high power, low loss, high speed, and high reliability by virtue of their material characteristics.

[0003] The power amplifier of the T / R component of the phased array radar usually adopts a pulse modulation mode of operation. GaN microwave power amplifier devices are widely used for their wide bandgap, high frequency and low switching loss. The input signal is modulated by RF signal and low-frequency TTL signal at the same time. The operating voltage of GaN microwave power amplifier is relatively high, and the operating power supply voltage of different models of GaN microwave power amplifier is different. The structure and performance of the modulation circuit directly affect the performance of the GaN microwave power amplifier. Especially with the miniaturization requirements of the T / R component system, the modulation circuit of the power amplifier is also required to be small in size, high in integration, with few peripheral passive devices and high in reliability.

[0004] At present, there are usually two pulse modulation methods for GaN microwave power amplifiers: one is to modulate the power supply of the power amplifier, and the other is to modulate the gate of the power amplifier; the power supply modulation is high-voltage modulation, and the driver scheme is complex, while the gate modulation is -5V normal voltage modulation, and the driver scheme is simple. In practical applications, due to the shortcomings of low transmission efficiency, poor reliability and stability of gate modulation, the first power supply modulation scheme is usually adopted.

[0005] At present, the operating power supply voltage range of GaN microwave power amplifiers suitable for phased array radar T / R components is mainly concentrated between 28V and 60V. Its power supply modulation driver mainly realizes low-voltage TTL input control, and the output is high-voltage CMOS output, which modulates the output signal through TTL input. Therefore, the voltage coverage range of the power supply modulation driver of the GaN microwave power amplifier is required to be wide.

[0006] The power supply modulation scheme of GaN microwave power amplifier can adopt the NMOS tube drive scheme or PMOS tube drive scheme. NMOS power tubes are widely used in switching power supplies and motor drives due to their advantages such as small internal resistance, high efficiency, many types of devices, and high voltage resistance. However, NMOS tube drive needs to be driven by an external capacitor bootstrap scheme, and the drive circuit is complex, while the PMOS tube drive scheme has simple peripheral circuits, and the internal resistance and voltage resistance meet the power supply modulation drive requirements of GaN microwave power amplifiers in the current phased array radar T / R components. Therefore, the power supply modulation scheme of GaN microwave power amplifiers in the current phased array radar T / R components mainly adopts the PMOS tube drive scheme.

[0007] The conventional scheme for power modulation of the existing GaN microwave power amplifier based on PMOS tube drive is to use discrete bipolar devices such as triodes + resistors + diodes + voltage regulators for driving, as follows: Figure 1 As shown. The working principle is as follows: the power PMOS tube is driven by resistor R4, diode D, transistor Q2, resistor R5 and resistor R6. When the TTL input is low, transistor Q2 is turned off and the PMOS tube is turned off; when the TTL input is high, transistor Q2 is turned on, and the PMOS tube is turned on through the voltage division of resistors R5 and R6. Resistors R1, R2, rectifier diode DZ and transistor Q1 are used for VEE shutdown control, that is, when VEE = -5V, Q1 is turned off, and the opening and closing of the output PMOS is controlled by the input TTL. When VEE is powered off, Q1 is turned on, then no matter whether the TTL input is high or low, transistor Q2 is turned off and the output PMOS tube is turned off.

[0008] The conventional power modulation scheme of the existing GaN microwave power amplifier based on PMOS tube drive is to use triode discrete bipolar devices + resistors + voltage regulator devices for driving; however, the disadvantage of this scheme is that since resistors are mainly used for voltage division and current limiting control, the static power consumption and speed cannot be optimized at the same time. In order to reduce power consumption, the opening and closing speed of the PMOS tube is often sacrificed, so it can only be used for low-speed modulation; using resistor voltage division, the voltage division level is related to the VCC power supply voltage, so the VCC power supply is required to be fixed, which lacks flexibility; using resistors and bipolar devices, the parameter accuracy of each device is poor, resulting in poor module parameter accuracy and batch consistency; finally, the discrete device solution is adopted, which occupies a large volume, has low reliability, and is difficult to provide more control functions.

[0009] With the miniaturization of T / R component systems and the increasing reliability requirements, the modulation circuit of the GaN microwave power amplifier is also required to have a small size, higher parameter requirements, high reliability, and adaptability to different load voltage requirements. Summary of the invention

[0010] The technical problem to be solved by the present invention is to overcome the existing defects and provide a single-chip integrated high-voltage PMOS tube driver, which is convenient for meeting the miniaturization, high reliability and high performance requirements of the T / R component system.

[0011] In order to solve the above technical problems, the present invention provides the following technical solutions: a single-chip integrated high-voltage PMOS tube driver, the input modulated TTL signal is connected to the logic control delay module U3 after passing through the TTL module U1, and the negative voltage power-off detection module U2 is also connected to the logic control delay module U3, the logic control delay module U3 outputs the HI signal that drives the high-side level shift module U4, and at the same time outputs the LI signal that drives the low-side drive module U6, the LI signal is output to the gate of the NMOS tube after passing through the low-side drive module U6; the HI signal is input to the high-side drive module U5 after passing through the high-side level shift module U4;

[0012] The power supply VCC outputs the internal voltages V1 and VB through the internal voltage generating module U7; V1 and GND are used as the power supply signal and ground signal of the TTL module U1, the negative voltage power-off detection module U2, the logic control delay module U3 and the low-side driving module U6; VCC is used as the positive power supply signal of the high-side driving module U5, VB is used as the negative power supply signal of the high-side driving module U5, VCC is used as the power supply signal of the high-side level shifting module U4, and GND is used as the ground signal of the high-side level shifting module U4;

[0013] The output signal of the high-side driver module U5 is connected to the gate of the PMOS tube, the source of the PMOS tube is connected to VCC, the drain of the PMOS tube is connected to the drain power supply terminal of the external GaN microwave power amplifier, and the source of the NMOS tube is connected to GND; the output signal of the drain of the NMOS tube is connected to the drain power supply terminal of the external GaN microwave power amplifier.

[0014] Preferably, a high-side shutdown feedback control module U8 is further included, and the output signal of the high-side driving module U5 passes through the high-side shutdown feedback control module U8 and then through the low-side driving module U6 and is output to the gate of the NMOS tube.

[0015] Preferably, a resistor R1 is included, and the output signal of the high-side driver module U5 is connected to the gate of the PMOS tube through the resistor R1.

[0016] Preferably, a resistor R2 is also included, and the output signal of the drain of the NMOS tube is connected to the drain power supply terminal of the external GaN microwave power amplifier through the resistor R2.

[0017] Preferably, the internal voltage V1 is 4V to 6V.

[0018] Preferably, the internal voltage VB output is a voltage in the range of VCC-6V to VCC-14V.

[0019] Preferably, the TTL signal is an input continuous wave or a pulse modulated wave.

[0020] Beneficial effects of the present invention: The single-chip integrated high-voltage PMOS tube driver of the present invention can integrate more functions, such as integrated negative voltage power-off detection and discharge circuit structure, which can meet more functional performance requirements of the T / R component system, and can subsequently integrate more control functions according to load requirements, such as integrated gate negative reference source drive of a GaN microwave power amplifier.

[0021] The requirements for VCC power supply voltage are reduced, and the VCC power supply voltage range is widened, which can adapt to the modulation voltage requirements of different GaN microwave power amplifier loads. The single-chip integration solution adopts high-voltage CMOS or BCD technology. Compared with the existing technical solutions of discrete devices, the product has low power consumption, fast speed, and high parameter controllable accuracy and consistency. The single-chip integration solution occupies a small PCB board volume, which meets the miniaturization requirements of the T / R component system. Compared with discrete devices, the single-chip integration solution enhances the reliability of the T / R component system. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 A schematic diagram of a power supply modulation scheme of a GaN microwave power amplifier based on PMOS tube drive in the prior art;

[0023] Figure 2 Schematic diagram of the single-chip integrated high-voltage PMOS tube driver of the present invention Figure 1 ;

[0024] Figure 3 Schematic diagram of the single-chip integrated high-voltage PMOS tube driver of the present invention Figure 1 ;

[0025] Figure 4 The figure is an input and output waveform diagram of the single-chip integrated high-voltage PMOS tube driver of the present invention.

[0026] Description of the accompanying drawings: U1, TTL module; U2, negative voltage power-off detection module; U3, logic control delay module; U4, high-side level shift module; U5, high-side drive module; U6, low-side drive module; U7, internal voltage generation module; U8, high-side shutdown feedback control module. DETAILED DESCRIPTION

[0027] The preferred embodiments of the present invention are described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described herein are only used to illustrate and explain the present invention, and are not used to limit the present invention.

[0028] like Figure 1As shown, a single-chip integrated high-voltage PMOS tube driver, the input modulated TTL signal is connected to the logic control delay module U3 after passing through the TTL module U1, and the negative voltage power-off detection module U2 is also connected to the logic control delay module U3, the logic control delay module U3 outputs the HI signal that drives the high-side level shift module U4, and at the same time outputs the LI signal that drives the low-side drive module U6, the LI signal is output to the gate of the NMOS tube after passing through the low-side drive module U6; the HI signal is input to the high-side drive module U5 after passing through the high-side level shift module U4;

[0029] The power supply VCC outputs internal voltages V1 and VB through the internal voltage generating module U7; V1 and GND are used as power supply signals and ground signals of the TTL module U1, the negative voltage power-off detection module U2, the logic control delay module U3 and the low-side driving module U6; VCC is used as the positive power supply signal of the high-side driving module U5, VB is used as the negative power supply signal of the high-side driving module U5, VCC is used as the power supply signal of the high-side level shifting module U4, and GND is used as the ground signal of the high-side level shifting module U4; the output signal of the high-side driving module U5 is connected to the gate of the PMOS tube, the source of the PMOS tube is connected to VCC, the drain of the PMOS tube is connected to the drain power supply terminal of the external GaN microwave power amplifier, and the source of the NMOS tube is connected to GND; the output signal of the drain of the NMOS tube is connected to the drain power supply terminal of the external GaN microwave power amplifier.

[0030] It includes a resistor R1, and the output signal of the high-side driving module U5 is connected to the gate of the PMOS tube through the resistor R1; it also includes a resistor R2, and the output signal of the drain of the NMOS tube is connected to the drain power supply terminal of the external GaN microwave power amplifier through the resistor R2; the internal voltage V1 adopts a 5V voltage; the internal voltage VB outputs a voltage of VCC-10V; the TTL signal is an input continuous wave or a pulse modulation wave.

[0031] like Figure 2 As shown, a high-side shutdown feedback control module U8 is also included. The output signal of the high-side driving module U5 passes through the high-side shutdown feedback control module U8 and then passes through the low-side driving module U6 and is output to the gate of the NMOS tube.

[0032] A logic control delay module U3 is used to control the NMOS tube and the external power PMOS tube to be turned off first and then turned on to prevent both of them from being turned on at the same time and thus damaging the device. The high-side shutdown feedback control method can also be used to further strengthen the dead zone control.

[0033] After VCC and VEE are powered on, regardless of whether IN has input, V1 outputs a voltage of approximately 5V and VB outputs a voltage of approximately VCC-10V.

[0034] When the IN input is low and VEE is normal (typical: -5V), through the U1 and U3 modules, HI outputs low level (0V), LI outputs low level (0V), and the HI signal passes through the U4 and U5 modules, and the output OUT1 signal is high level (VCC), directly or through the external R1 resistor, so that the power PMOS tube is turned off, and the LI signal passes through the U6 module, outputs high level (V1), so that the NMOS tube is turned on, and the output OUT2 signal is low level (0V). In this state, the GaN microwave power amplifier load does not work.

[0035] When the IN input is high and VEE is normal (typical: -5V), through the U1 and U3 modules, HI outputs high level (V1), LI outputs high level (V1), the HI signal passes through the U4 and U5 modules, and the output OUT1 signal is low level (VB), directly or through the external R1 resistor, the power PMOS tube is turned on, the LI signal passes through the U6 module, outputs low level (0V), the NMOS tube is turned off, and the output OUT2 signal is high level (VCC). In this state, the GaN microwave power amplifier load works.

[0036] When VEE is in the power-off state, regardless of the state of IN, the output OUT1 signal is high level (VCC), directly or through the external resistor R1, the power PMOS tube is turned off, and the output OUT2 signal is low level (0V). In this state, the GaN microwave power amplifier load does not work.

[0037] TTL can input continuous wave or pulse modulated wave.

[0038] The function truth table is as follows:

[0039]

[0040] Logic control delay module: used for internal dead zone control. Specifically, it is used for the control of turning off the internal NMOS tube and the external power PMOS tube first and then turning them on during the TTL signal conversion process to prevent the two from being turned on at the same time and damaging the device, thereby improving the reliability of the system operation.

[0041] In addition to designing a dead zone structure inside the circuit, the method of preventing the internal NMOS tube and the external power PMOS tube from turning on at the same time can also be used to further strengthen the dead zone control by using high and low side feedback. For example, according to actual applications, the external power PMOS tube is larger than the internal NMOS tube, and the PMOS tube gate OUT1 signal has a slow ramp edge, so a single-side feedback can be set, that is, when the OUT1 signal climbs to a high level and the PMOS tube is completely turned off, the internal NMOS tube is turned on, and OUT1 outputs a low level. Figure 3 The added U8 module is a high-side shutdown feedback control module.

[0042] like Figure 4 As shown, IN: is the modulated TTL input signal;

[0043] VEE: negative voltage power supply input signal; OUT1: output signal of the high-side driver module of the driver; OUT2: output signal of the low-side driver module of the driver;

[0044] t1: Delay time from the rising edge of the modulated TTL input signal to the falling edge of the output signal of the high-side driver module of the driver; t2: Delay time from the rising edge of the modulated TTL input signal to the rising edge of the output signal of the low-side driver module of the driver; t3: Delay time from the falling edge of the modulated TTL input signal to the rising edge of the output signal of the high-side driver module of the driver; t4: Delay time from the falling edge of the modulated TTL input signal to the falling edge of the output signal of the low-side driver module of the driver.

[0045] t2-t1, t4-t3: Dead time of the power PMOS tube and the internal NMOS output driver tube.

[0046] The above are preferred implementation modes of the present invention. Those skilled in the art to which the present invention belongs can also change and modify the above implementation modes. Therefore, the present invention is not limited to the above specific implementation modes. Any obvious improvements, substitutions or modifications made by those skilled in the art on the basis of the present invention belong to the protection scope of the present invention.

Claims

1. A single-chip integrated high-voltage PMOS tube driver, characterized in that: The input modulated TTL signal is connected to the logic control delay module U3 after passing through the TTL module U1, and the negative voltage power-off detection module U2 is also connected to the logic control delay module U3. The logic control delay module U3 outputs the HI signal that drives the high-side level shift module U4, and at the same time outputs the LI signal that drives the low-side drive module U6. The LI signal is output to the gate of the NMOS tube after passing through the low-side drive module U6; the HI signal is input to the high-side drive module U5 after passing through the high-side level shift module U4; The power supply VCC outputs the internal voltages V1 and VB through the internal voltage generating module U7; V1 and GND are used as the power supply signal and ground signal of the TTL module U1, the negative voltage power-off detection module U2, the logic control delay module U3 and the low-side driving module U6; VCC is used as the positive power supply signal of the high-side driving module U5, VB is used as the negative power supply signal of the high-side driving module U5, VCC is used as the power supply signal of the high-side level shifting module U4, and GND is used as the ground signal of the high-side level shifting module U4; The output signal of the high-side driver module U5 is connected to the gate of the PMOS tube, the source of the PMOS tube is connected to VCC, the drain of the PMOS tube is connected to the drain power supply terminal of the external GaN microwave power amplifier, and the source of the NMOS tube is connected to GND; the output signal of the drain of the NMOS tube is connected to the drain power supply terminal of the external GaN microwave power amplifier.

2. The single-chip integrated high-voltage PMOS transistor driver according to claim 1, characterized in that: It also includes a high-side shutdown feedback control module U8. The output signal of the high-side driving module U5 passes through the high-side shutdown feedback control module U8 and then passes through the low-side driving module U6 and is output to the gate of the NMOS tube.

3. The single-chip integrated high-voltage PMOS transistor driver according to claim 1, characterized in that: It includes a resistor R1, and the output signal of the high-side driver module U5 is connected to the gate of the PMOS tube through the resistor R1.

4. The single-chip integrated high-voltage PMOS transistor driver according to claim 1, characterized in that: It also includes a resistor R2, and the output signal of the drain of the NMOS tube is connected to the drain power supply terminal of the external GaN microwave power amplifier through the resistor R2.

5. The single-chip integrated high-voltage PMOS transistor driver according to claim 1, characterized in that: The internal voltage V1 adopts 4V~6V voltage.

6. The single-chip integrated high-voltage PMOS transistor driver according to claim 1, characterized in that: The internal voltage VB is output as a voltage in the range of VCC-6V to VCC-14V.

7. The single-chip integrated high-voltage PMOS transistor driver according to claim 1, characterized in that: The TTL signal is an input continuous wave or a pulse modulated wave.

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