Organic photoelectric detector bottom electrode and preparation method and application thereof
A photodetector and bottom electrode technology, applied in photovoltaic power generation, electric solid state devices, semiconductor/solid state device manufacturing, etc., can solve problems such as work function mismatch, bottom electric layer oxidation, etc., to improve work function matching and reduce contact Resistance, anti-oxidation effect
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- Publication Date
- 2020-09-18
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention belongs to the technical field of semiconductor optoelectronic devices, and in particular relates to a bottom electrode of an organic photodetector and a preparation method and application thereof. Background technique
[0002] Photodetector is a very important optoelectronic device, which can be widely used in space thermal detection, space thermal imaging, space communication and other fields. In recent years, it can be seen that photodetectors in the infrared band have developed rapidly, especially organic photodetectors using new organic polymer materials as active layers. Photodetectors usually adopt a sandwich-like structure, which is divided into a bottom electrode, an anode modification layer, an active layer, a cathode modification layer, a transparent electrode, and a substrate, among which the upper and lower electrodes and the active layer are indispensable. For organic photodetectors, indium tin oxide (ITO) is usually used f...
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Embodiment Construction
[0027] In order to make the object, technical solution and advantages of the present invention clearer, the present invention is further described in detail. It should be understood that the specific embodiments described here are only used to explain the present invention, and are not intended to limit the present invention, that is, the described embodiments are only some of the embodiments of the present invention, but not all of the embodiments.
[0028] Using existing vacuum evaporation equipment, using high-purity aluminum (≥99.99%) and nickel-chromium alloy (Ni:Cr=80:20wt%) as the growth source of the main layer of the bottom electrode and the function adjustment layer respectively, on a transparent substrate The main body layer is deposited first, and then the function adjustment layer of the nickel-chromium alloy is deposited.
[0029] The preparation method of the main body layer and the function adjustment layer is as follows:
[0030] 1. Pretreatment of transparen...