electronic device

Abstract

The invention is entitled "Electronic Device". An electronic device is disclosed. The electronic device can include a substrate defining a trench. In one embodiment, a semiconductor body can be within the trench, where the semiconductor body has a resistivity of at least 0.05 ohm-centimeter and is electrically isolated from the substrate. In one embodiment, an electronic component can be within the semiconductor body. The electronic component can be a resistor or a diode. In one particular embodiment, the semiconductor body has an upper surface, the electronic component is within and along the upper surface, and is spaced apart from a bottom of the semiconductor body. In further embodiments, the electronic device can also include a first electronic component within an active region of the substrate, an isolation structure within the trench, and a second electronic component within the isolation structure.

Description

Technical Field

[0001] This disclosure relates to electronic devices and processes for forming electronic devices, and more specifically, to electronic devices including semiconductor bodies or isolation structures within trenches and processes for forming them. Background Technology

[0002] A semiconductor die can include various components, one of which may interfere with the operation of another. For example, power transistors can be isolated from logic transistors so that the electric field of the power transistor does not adversely affect the operation of the logic transistor. Deep trench isolation can be used to electrically isolate power transistors from logic transistors; however, deep trench isolation occupies die area that would otherwise be used solely for electrical isolation. Improvements in semiconductor dies and more efficient use of die area are desired. Attached Figure Description

[0003] The accompanying drawings illustrate embodiments by way of example, but the embodiments are not limited to the drawings.

[0004] Figure 1 and Figure 2 The illustration includes a top view and a cross-sectional view of a portion of a workpiece, which includes a substrate and trenches extending into the substrate.

[0005] Figure 3 and Figure 4 include Figure 1 and Figure 2 Illustrations of top and cross-sectional views of a workpiece, which includes an insulating layer and a semiconductor body within a trench.

[0006] Figure 5 and Figure 6 Including after the resistor is formed according to one implementation scheme Figure 3 and Figure 4 Illustrations of a sectional view and a top view of a portion of the workpiece.

[0007] Figure 7 and Figure 8 Including, according to another embodiment, after forming the resistor Figure 3 and Figure 4 Illustrations of a sectional view and a top view of a portion of the workpiece.

[0008] Figure 9 and Figure 10 Including after the resistor is formed according to yet another implementation scheme Figure 3 and Figure 4 Illustrations of a sectional view and a top view of a portion of the workpiece.

[0009] Figure 11 Including after forming the diode according to another embodiment Figure 3 and Figure 4A top view illustration of a portion of the workpiece.

[0010] Figure 12 Including diodes according to one embodiment Figure 11 An illustration of a cross-sectional view of a portion of the workpiece.

[0011] Figure 13 Including a set of diodes according to one embodiment Figure 11 An illustration of a cross-sectional view of a portion of the workpiece.

[0012] Figure 14 The circuit diagram includes a resistor containing a single-crystal semiconductor material and another resistor containing a polycrystalline semiconductor material.

[0013] Figure 15 Including according to an implementation plan Figure 14 The circuit diagram is a physical design illustration.

[0014] Figure 16 A circuit diagram depicting a resistor that can be used in a temperature sensing circuit is included.

[0015] Figure 17 Including according to an implementation plan Figure 16 The circuit diagram is a physical design illustration.

[0016] Figure 18 A circuit diagram depicting an inverter that includes transistors and resistors within a semiconductor body.

[0017] Figure 19 Including according to an implementation plan Figure 18 The circuit diagram is a physical design illustration.

[0018] Figure 20 A circuit diagram depicting a bipolar transistor whose base is connected to a voltage divider.

[0019] Figure 21 A circuit diagram of a junction field-effect transistor whose gate is connected to a voltage divider is depicted.

[0020] Figure 22 A circuit diagram depicting a metal-insulator-semiconductor field-effect transistor and electronic components that help protect the transistor's gate.

[0021] Figure 23 Including according to an implementation plan Figure 22 The circuit diagram is a physical design illustration.

[0022] Figure 24 Including according to another implementation scheme Figure 22The circuit diagram is a physical design illustration.

[0023] Figure 25 Including according to yet another implementation plan Figure 22 The circuit diagram is a physical design illustration.

[0024] Figure 26 A circuit diagram, including a switching circuit, is provided.

[0025] Figure 27 Including according to an implementation plan Figure 26 The circuit diagram is a physical design illustration.

[0026] Those skilled in the art will recognize that the elements in the accompanying drawings are shown for simplicity and are not necessarily drawn to scale. For example, the dimensions of some elements in the drawings may be enlarged relative to other elements to aid in an understanding of embodiments of the invention. Summary of the Invention

[0027] The problem this invention aims to solve is to increase the component density in electronic devices that include isolation structures.

[0028] According to one aspect of the invention, an electronic device is provided. The electronic device may include: a substrate defining a trench; a first electronic component within a first active region of the substrate, wherein the first active region is outside the trench; an isolation structure within the trench and adjacent to the first electronic component; and a second electronic component within the isolation structure.

[0029] In one embodiment, the isolation structure includes: a semiconductor body including at least a portion located below the second electronic component; and an insulating layer disposed along the sides and bottom of the trench and electrically isolating the semiconductor body from the substrate.

[0030] In one particular implementation, the first active region comprises a single-crystal semiconductor material, and the semiconductor body and the second electronic component comprise a polycrystalline semiconductor material.

[0031] In another embodiment, the electronic device further includes a third electronic component within a second active region of the substrate, wherein an isolation structure is disposed between the first and third electronic components.

[0032] In one particular implementation, the first electronic component is a power transistor or a logic transistor, and the third electronic component is another of the power transistors or logic transistors.

[0033] In a more specific embodiment, the first electronic component is a transistor, and the second electronic component is a resistor or diode, wherein the first electronic component is coupled to the second electronic component.

[0034] In another embodiment, the first electronic component is a first resistor, the second electronic component is a second resistor, and the first and second resistors are connected in parallel.

[0035] In one particular embodiment, the first resistor has a body comprising a single-crystal semiconductor material, and the second resistor has a body comprising a polycrystalline semiconductor material.

[0036] In another aspect, an electronic device is provided. The electronic device may include: a substrate defining a trench; a semiconductor body within the trench, wherein the semiconductor body has a resistivity of at least 0.05 ohm-cm and is electrically isolated from the substrate; and a diode within the semiconductor body, wherein the semiconductor body and the diode comprise a polycrystalline semiconductor material.

[0037] In another aspect, an electronic device is provided. The electronic device may include: a substrate comprising a single-crystal semiconductor material and defining a trench with a depth of at least 5 micrometers; a semiconductor body within the trench, wherein the semiconductor body comprises a polycrystalline semiconductor material, has an upper surface having a resistivity of at least 0.05 ohm-cm, and is electrically isolated from the substrate; and a first electronic component within and along the upper surface of the semiconductor body, wherein the first electronic component is spaced apart from the bottom of the semiconductor body.

[0038] The technical effect achieved by the present invention allows the semiconductor body within the isolation structure to be used to form one or more electronic components within the semiconductor body. Detailed Implementation

[0039] The following description, in conjunction with the accompanying drawings, is provided to aid in understanding the teachings disclosed herein. The following discussion will focus on specific implementations and schemes of these teachings. This focus is provided to aid in describing the teachings and should not be construed as limiting the scope or applicability of the teachings. However, other schemes may be adopted based on the teachings disclosed in this application.

[0040] The term "deep trench isolation" is intended to refer to an isolation structure with a depth of at least 5 micrometers. Shallow trench isolation is shallower than deep trench isolation and typically has a depth of less than 1 micrometer.

[0041] The term "logic transistor" is intended to refer to a transistor that, when in the on state, can be switched between the drain and source (Id). DS ) or collector and emitter (I CE It can carry a current of up to 0.1 amperes between the drain and source of the transistor when it is in the off state. DS ) or collector and emitter (V CE The voltage between 10 volts is at most.

[0042] The term "power transistor" is intended to refer to a transistor that, when in the on-state, can operate between the drain and source (Id). DS ) or collector and emitter (I CE A current exceeding 1 ampere can flow between the drain and source of the transistor when it is in the off state. DS ) or collector and emitter (V CE A voltage of at least 30 volts is required between them.

[0043] The terms “comprising,” “containing,” “including,” “having,” or any other variations thereof are intended to cover non-exclusive inclusion. For example, a method, article, or apparatus that includes a list of features is not necessarily limited to those features, but may include other features not expressly listed or inherent to such a method, article, or apparatus. Furthermore, unless expressly stated to the contrary, “or” means inclusive or, not exclusive, or. For example, condition A or B is satisfied by any of the following: A is true (or exists) and B is false (or does not exist); A is false (or does not exist) and B is true (or exists); and both A and B are true (or exist).

[0044] Furthermore, the terms "a" or "an" are used to describe the elements and components described herein. This is merely for convenience and to give a general meaning regarding the scope of the invention. The description should be considered to include one (a), at least one (a), or the singular form includes the plural form and vice versa, unless explicitly stated otherwise. For example, when a single item is described herein, more than one may be used instead of a single item. Similarly, in cases where more than one item is described herein, a single item may be used instead of the more than one item.

[0045] The group number corresponds to a column in the periodic table based on the IUPAC periodic table of elements published on November 28, 2016.

[0046] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. Materials, methods, and examples are exemplary only and are not intended to be limiting. Many details regarding specific materials and processing actions not described herein are conventional and can be found in textbooks and other sources in the semiconductor and electronics fields.

[0047] Resistors or diodes may be formed within a portion of an electronic device that might otherwise be unused. In one embodiment, the electronic device may include a trench isolation structure that may comprise a semiconductor body within a trench. In a particular embodiment, the trench isolation structure may be a deep trench isolation structure. Resistors or diodes may be within the semiconductor body, and in one embodiment, may be positioned along the upper surface of the semiconductor body, which is positioned along a plane substantially parallel to the main surface of the substrate. Active regions of the substrate may be arranged along opposite sides of the trench isolation structure. One or more resistors, diodes, or resistor-diode combinations may be within the semiconductor body and coupled to one or more electronic components within any one or both active regions.

[0048] In one aspect, the electronic device may include: a substrate defining a trench having a depth of at least 5 micrometers; a semiconductor body within the trench, wherein the semiconductor body has an upper surface and a resistivity of at least 0.05 ohm-cm and is electrically isolated from the substrate; and an electronic component within and along the upper surface and spaced apart from the bottom of the semiconductor body.

[0049] In another aspect, the electronic device may include: a substrate defining a trench; a semiconductor body within the trench, wherein the semiconductor body has a resistivity of at least 0.05 ohm-cm and is electrically isolated from the substrate; and a diode within the semiconductor body.

[0050] In another aspect, the electronic device may include: a substrate defining a trench; a first electronic component within an active region of the substrate; an isolation structure within the trench and surrounding the first electronic component; and a second electronic component within the isolation structure. These concepts will be better understood upon reading the remainder of the specification in conjunction with the accompanying drawings.

[0051] Figure 1 and Figure 2 Includes a top view and a cross-sectional view of the substrate 100 after the substrate 100 has been patterned to define the trench 120. Figure 2 It is along Figure 1The figure shows a cross-section of section 2-2. Substrate 100 has a main surface 110 and may comprise: a single-crystal semiconductor material, which may contain Group 14 elements such as Si or Ge; or a compound semiconductor material, such as SiC, SiGe, Group III-V semiconductors such as GaAs, GaN, AlGaN, InP, etc., or Group II-VI semiconductors such as CdSe, PbTe, etc. Substrate 100 may have a relatively simple structure, such as a Si wafer with a substantially uniform doping concentration, or it may have a more complex structure that may include a buried doped layer, an undoped or lightly doped epitaxial layer above a heavily doped wafer, a buried oxide layer, another suitable structure, or a combination thereof.

[0052] Trench 120 can be used as a deep trench isolation structure to separate active region 102 from another active region 104. For more complex substrate fabrications, trench 120 can extend to or penetrate buried features, such as buried doped regions, buried oxide layers, etc. The depth of trench 120 can be at least 5 micrometers, at least 11 micrometers, or at least 20 micrometers. Trench 120 does not extend through the entire thickness of substrate 100. In one embodiment, trench 120 has a depth of up to 95 micrometers, up to 75 micrometers, or up to 50 micrometers. The width of trench 120 is sufficient to provide electrical insulation between electronic components that can be at least partially formed within substrate 100 along main surface 110. While there is no theoretical limitation on the width of trench 120, as the width increases, more active region is lost, and the area of ​​the electronic components is limited. In one embodiment, the width of the trench is at least 0.2 micrometers, at least 0.3 micrometers, or at least 0.5 micrometers, and in another embodiment, the width is at most 9.5 micrometers, at most 4 micrometers, or at most 2 micrometers.

[0053] Figure 3 and Figure 4 The diagram shows a top view and a cross-sectional view of the workpiece after the insulating layer 220 has been formed and the remaining portion of the trench 120 has been filled with a semiconductor body 240 having an upper surface 242. Figure 4 It is along Figure 3The figure is shown in section line 4-4. The insulating layer 220 may comprise oxides, nitrides, or oxynitrides. The insulating layer 220 may be formed by thermally oxidizing the substrate 100 to form the insulating layer 220 or by depositing the insulating layer 220. The insulating layer 220 is deposited to a thickness sufficient to be continuous along the sidewalls and bottom of the trench 120, but not thick enough to completely fill the trench 120. When expressed as a percentage of the width of the trench 120, the insulating layer 220 may have a thickness ranging from 0.2% to 20% of the width of the trench 120. In one embodiment, the insulating layer has a thickness of at least 20 nm, at least 50 nm, or at least 110 nm, and in another embodiment, the thickness is at most 900 nm, at most 500 nm, or at most 200 nm.

[0054] When a workpiece is processed through one or more high-temperature operations (e.g., above 600°C), the semiconductor body 240 can help reduce stress. In one embodiment, the semiconductor body 240 and the substrate 100 may comprise the same material, such as Si, such that the semiconductor body 240 and the substrate 100 have approximately the same coefficient of thermal expansion. As initially formed (before selective doping operations), in one embodiment, the semiconductor body 240 has a high resistivity of at least 0.05 ohm-cm, at least 2 ohm-cm, or at least 20 ohm-cm. In another embodiment, the semiconductor body 240 has a resistivity of up to 100 milliohm-cm. In terms of dopant concentration, the semiconductor body 240 may be deposited as an undoped semiconductor layer. In another embodiment, the semiconductor body 240 may be n-type or p-type and has a resistivity of up to 1 × 10⁻⁶. 17 atoms / cm 3 At most 1×10 15 atoms / cm 3 Or at most 1×10 14 atoms / cm 3 The dopant concentration. Whether undoped or doped, the dopant concentration of the initially formed semiconductor body 240 is referred to in this paper as the background dopant concentration.

[0055] After forming the insulating layer 220 and depositing a semiconductor material layer for the semiconductor body 240, portions of the insulating layer 220 and the semiconductor material outside the trench 120 are removed. An isolation structure 200 is located within the trench 120, and in one embodiment, the isolation structure 200 is a deep isolation structure. The insulating layer 220 is disposed between the semiconductor body 240 and the sidewalls and bottom of the trench 120. The insulating layer 220 electrically isolates the semiconductor body 240 from the substrate 100. In the illustrated embodiment, an active region 102 of the substrate 100 is laterally surrounded by the isolation structure 200, and another active region 104 is arranged along the opposite side of the isolation structure 200. As will be described later in this specification, electronic components may be formed within the active regions 102 and 104 and within the semiconductor body 240.

[0056] Exemplary electronic components that can be formed within the semiconductor body 240 may include at least one resistor, at least one diode, or a combination thereof. This allows for more efficient use of space that would otherwise be unused. The electronic components are arranged along or near the upper surface of the semiconductor body 240. In one embodiment, current flowing through the electronic components may flow primarily along a direction substantially parallel to the upper surface 242 of the semiconductor body 240. The formation of the electronic components can be integrated into the process flow without adding any additional masking operations or other processing steps. Complex vertical structures that might involve additional processing steps are not required.

[0057] Figure 5 and Figure 6 A cross-sectional view and a top view of a resistor 500 that can be formed from a semiconductor body 240 are shown. In this embodiment, the resistor 500 is within the semiconductor body 240. The resistor 500 can be formed from a single doped region 522 with a dopant concentration higher than that of the semiconductor body 240. The resistance of the resistor 500 can be determined by the dopant concentration of the doped region 522, the distance between the contacts to the doped region 522, and the width of the semiconductor body 520 (viewed from the top view). The doped region 522 can have a dopant concentration sufficient to allow ohmic contact with the doped region 522. In one embodiment, the doped region 522 can be formed simultaneously with the source region, drain region, or emitter region of a transistor formed within the active region of the substrate 100. In one embodiment, the dopant concentration can be 1 × 10⁻⁶. 18 atoms / cm 3 Up to 5×10 21 atoms / cm 3The depth of the doped region 522 can be in the range of 0.02 micrometers to 0.5 micrometers. This depth can correspond to the pn junction depth of the doped region 522, or, when the semiconductor body 240 is undoped or has the same conductivity type as the doped region 522, the dopant concentration of the doped region 522 is at least 10% higher than the background dopant concentration of the semiconductor body 240.

[0058] A self-aligned silicide barrier layer 620 is formed above the workpiece and has openings formed where it will contact the doped region 522. The self-aligned silicide barrier layer 620 may comprise one or more films of oxide, nitride, or oxide-oxygen nitride. The thickness of the self-aligned silicide barrier layer 620 may be in the range of 10 nm to 200 nm. Self-aligned silicide components 642 and 644 may be formed above the doped region 522. Self-aligned silicide components 642 and 644 may comprise TiSi2, TaSi2, CoSi2, PtSi2, etc. Self-aligned silicide components 642 and 644 may have a thickness in the range of 10 nm to 200 nm.

[0059] An insulating layer 650 may be formed over the workpiece and patterned to define contact openings. The insulating layer 650 may comprise one or more films of oxide, nitride, or oxynitride. The thickness of the insulating layer 650 may range from 0.1 micrometers to 5 micrometers. Interconnects 662 and 664 are formed within the contact openings and over the doped region 522. In one embodiment, interconnects 662 and 664 may comprise a bulk conductive film primarily comprising Al or Cu. When the conductive layer comprises multiple films, an adhesion film or barrier film may be deposited prior to the bulk conductive film. An antireflective film may be formed over the bulk conductive film and may comprise a metal nitride film. The conductive layer may have a thickness ranging from 0.5 micrometers to 3 micrometers. The conductive layer may be patterned to form interconnects 662 and 664. In another embodiment, self-aligned silicide components 642 and 644 may be part of interconnects 662 and 664. In another embodiment, self-aligned silicide components 642 and 644 may not be formed, and interconnects 662 and 664 may directly contact the doped region 522. In one embodiment, the formation of the self-aligned silicide barrier layer 620, self-aligned silicide components 642 and 644, insulating layer 650, and interconnects 662 and 664 may be integrated with corresponding structures forming other electronic components within one or more active regions of the substrate 100.

[0060] exist Figure 6In other top views described later in this specification, the self-aligned silicide barrier layer 620 and insulating layer 650 are not shown to better illustrate the positional relationship between the different parts of the electronic device. In practice, the self-aligned silicide barrier layer 620 covers at least a portion of the semiconductor body 240 and active regions 102 and 104, where no self-aligned silicide components will be formed. The insulating layer 650 covers all workpieces except for the portions of the contact openings and scribe lines.

[0061] Figure 7 and Figure 8 Cross-sectional and top views of a resistor 700 that can be formed within a semiconductor body 240 are shown. Resistor 700 is similar to resistor 500, except that resistor 700 includes a well region 702 and doped regions 722 and 724. Compared to resistor 500, which depends on the dopant concentration of doped region 522, well region 702 allows for greater control over the resistance of resistor 700. Therefore, well region 702 allows resistor 700 to achieve resistances that are impossible for resistor 500 due to the dopant concentration of doped region 522 and the physical constraints of resistor 500. Well region 702 can have n-type or p-type conductivity. In one embodiment, the dopant concentration of well region 702 is higher than the dopant concentration of semiconductor body 240. When resistor 700 has a relatively high resistance, the dopant concentration of well region 702 can be at most 1 × 10⁻⁶. 17 atoms / cm 3 At most 1×10 16 atoms / cm 3 Or at most 1×10 15 atoms / cm 3 In one embodiment, the dopant concentration is at least 1 × 10⁻⁶. 13 atoms / cm 3 When resistor 700 has a relatively low resistance, the doping concentration can be at least 2 × 10⁻⁶. 17 atoms / cm 3 At least 1×10 18 atoms / cm 3 Or at least 1×10 19 atoms / cm 3Well region 702 may have the same or greater depth as doped regions 722 and 724. In one embodiment, the depth of well region 702 is less than half the depth of trench 120, and typically less than one-quarter the depth of trench 120. In one embodiment, the depth of well region 702 is at least 0.02 micrometers, at least 0.3 micrometers, or at least 0.5 micrometers, and in another embodiment, well region 702 has a depth of up to 9 micrometers, up to 6 micrometers, or up to 3 micrometers. Doped regions 722 and 724 may have any dopant concentration and depth as previously described with respect to doped region 522. Well region 702 may have a dopant concentration less than that of doped regions 722 and 724.

[0062] The timing of the formation of well region 702 can depend on the desired dopant concentration and depth of well region 702. Well region 702 can be formed without additional masking operations or another processing step. When well region 702 is to have a relatively low dopant concentration and a relatively deep depth, well region 702 can be formed simultaneously with the n-well or p-well of the body region, drift region, or base region of the transistor formed within the active region of the substrate. When well region 702 is to have a relatively low dopant concentration and a relatively shallow depth, well region 702 can be formed simultaneously with the enhancement or depletion region of the channel region of the transistor formed within the active region 102 of the substrate 100. When well region 702 is to have a relatively high dopant concentration and a relatively shallow depth, well region 702 can be formed simultaneously with the lightly doped drain (LDD) region of the transistor formed within the active regions 102 or 104 of the substrate 100. The timing of the formation of doped regions 722 and 724 can be any timing described with respect to the formation of doped region 522.

[0063] Figure 9 and Figure 10 A cross-sectional view and a top view of a resistor 900 that can be formed from a semiconductor body 240 are shown. In this embodiment, the resistor 900 is located within the semiconductor body 240. The doping concentration of each of the doped regions 722 and 724 is higher than the doping concentration of the semiconductor body 240. A portion of the semiconductor body 240 is disposed between the doped regions 722 and 724. Figure 7 and Figure 8 Compared to the embodiment with well region 702 shown, Figure 9 and Figure 10The illustrated embodiment does not include the well region or other doped regions between doped regions 722 and 724. The resistance of resistor 900 can be determined by the dopant concentration of semiconductor body 240, the distance between doped regions 722 and 724, the depth of doped regions 722 and 724, and the width and depth of semiconductor body 240 (viewed from top view). In the illustrated embodiment, at least 50% of the current flowing through resistor 900 is at a depth greater than the depths of at most doped regions 722 and 724. Significantly less than 50% of the current through resistor 900 flows at a depth greater than 1 micrometer below the depths of doped regions 722 and 724 within semiconductor body 240.

[0064] In other embodiments, one or more diodes may be formed within the semiconductor body 240. Figures 11 to 13 A top view and a cross-sectional view are shown of a diode 1120 and a set of diodes 1130 that can be formed within a semiconductor body 240. Figures 11 to 13 The illustrations in the figures are exemplary layouts and are not intended to limit the scope of the invention as defined in the appended claims. References Figure 11 The semiconductor body 240 includes a left side segment 1142, a top segment 1144, a right side segment 1146, and a bottom segment 1148. The semiconductor body 240 may contain only a diode 1120 or a group of diodes 1130, but not both, or it may contain more than one of diode 1120 or a group of diodes 1130. Furthermore, diode 1120 and a group of diodes 1130 may be located in the same segment, adjacent segments, or opposite segments of the semiconductor body 240 (e.g., [missing information]). Figure 11 (as shown) inside.

[0065] Figure 12 Including diode 1120 along Figure 11 A cross-sectional view along section line 12-12 is shown. The structure of diode 1120 includes doped regions 1222, 1224, and 1226. Doped regions 1222 and 1226 have relatively high dopant concentrations that form ohmic contacts with self-aligned silicide components 1242 and 1246 or interconnects 1262 and 1266 (if optional self-aligned silicide components 1242 and 1246 are not present). Doped region 1224 has a relatively low dopant concentration compared to doped regions 1222 and 1226. The breakdown voltage of diode 1120 can be determined by the dopant concentration of doped region 1224, and to a lesser extent, the dopant concentration of the doped region has an opposite conductivity type to that of doped region 1224. In one embodiment, doped region 1222 may be N-type. + Region 1224, the doped region can be N - Region 1226, and the doped region 1226 can be P +Therefore, the breakdown voltage of the diode is determined by the dopant concentration of doped region 1224, and to a lesser extent by the dopant concentration of doped region 1226. If doped region 1224 is P... - The breakdown voltage is determined by the dopant concentration of doped region 1224, and to a lesser extent by the dopant concentration of doped region 1222.

[0066] As shown in the figure, doped regions 1222, 1224, and 1226 have substantially the same depth. In practice, any two or all of doped regions 1222, 1224, and 1226 can have different depths. For example, doped region 1222 can be with N... + The source, drain, or emitter regions are formed simultaneously, and the doped region 1226 can interact with P. + The source, drain, or emitter regions are formed simultaneously. In another embodiment, the doped region 1224 can be combined with the well region or base region, N... - The LDD region, the enhancement region of the channel region, or the depletion region are formed simultaneously. Therefore, the depth of the doped region 1224 can vary in part based on its formation with another doped region in the active region of the substrate 100. In another embodiment, the doped region 1224 may not be used. The semiconductor body 240 may be located between the doped regions 1222 and 1226. When the semiconductor body 240 is undoped, a P-type intrinsic N-type (PIN) diode can be formed.

[0067] In another embodiment, a Schottky diode may be formed in place of or in combination with diode 1120. Either doped region 1222 or 1226 may be removed, and doped region 1224 directly contacts the self-aligned silicide component or interconnect (if the self-aligned silicide component is not present). In one embodiment, doped region 1226 is removed, and doped region 1224 is extended to contact self-aligned silicide component 1246. In one embodiment, doped regions 1222 and 1224 have the same conductivity type. The dopant concentration of doped region 1222 is sufficiently high (e.g., at least 1 × 10⁻⁶). 19 Ohms / cm 3To form an ohmic contact with the metal in the self-aligned silicide component 1242, the dopant concentration of the doped region 1224 is insufficient to form an ohmic contact with the metal in the self-aligned silicide component 1246. In this embodiment, a Schottky diode is formed at the interface between the self-aligned silicide component 1246 and the doped region 1224. In another embodiment, a pn diode and a Schottky diode can be formed. The doped region 1222 is removed, and the doped region 1224 is extended to contact the self-aligned silicide component 1242. The doped regions 1224 and 1226 have opposite conductivity types, therefore, a pn diode is formed at the pn junction between the doped regions 1224 and 1226. Similar to the previous embodiment, the dopant concentration of the doped region 1224 is insufficient to form an ohmic contact with the metal in the self-aligned silicide component 1242, and the dopant concentration of the doped region 1226 is sufficiently high (e.g., at least 1 × 10⁻⁶). 19 Ohms / cm 3 This is sufficient to form an ohmic contact with the self-aligned silicide component 1246. In this embodiment, a Schottky diode is formed at the interface between the self-aligned silicide component 1242 and the doped region 1224. In another embodiment, there is no self-aligned silicide component, and the metal within the interconnects 1262 and 1266 forms a Schottky or ohmic contact, just like the self-aligned silicide components 1242 and 1246.

[0068] Figure 13A cross-sectional view including a set of diodes 1130, including diodes 1132 and 1134. Diode 1132 includes doped regions 1332, 1334, and 1336, and diode 1134 includes doped regions 1352, 1354, and 1356. Doped regions 1332 and 1352 are similar to doped region 1222 and can be formed as described with respect to doped region 1222; doped regions 1334 and 1354 are similar to doped region 1224 and can be formed as described with respect to doped region 1224; and doped regions 1336 and 1356 are similar to doped region 1226 and can be formed as described with respect to doped region 1226. Doped region 1332 is electrically connected to interconnect 1362 via self-aligned silicide member 1342, and doped region 1356 is electrically connected to interconnect 1366 via self-aligned silicide member 1346. In one embodiment, doped regions 1336 and 1352 have opposite conductivity types, and a self-aligned silicide member 1344 electrically shorts doped regions 1336 and 1352 together to electrically connect diodes 1132 and 1134. If self-aligned silicide members 1342, 1344, and 1346 are not present, a contact opening in the insulating layer 650 may be formed over doped regions 1336 and 1352, and another interconnect may be formed within the contact opening to electrically short-circuit doped regions 1336 and 1352 together. More than two diodes may be connected in series. As the number of diodes increases, the breakdown voltage of a set of diodes 1130 increases, and the voltage required to forward bias the diodes also increases. After reading this specification, those skilled in the art will be able to design a set of diodes for a specific application.

[0069] Many different circuits can be used with the semiconductor body 240 to provide at least one resistor or at least one diode for the circuit. In many subsequent figures, interconnects will be shown as lines to make the positional relationships between electronic components clearer. In the top view illustration, contacts are shown within boxes as Xs, and interconnects are shown as lines. In practice, interconnects can be at one or more different interconnect levels, and the positions of parts of the electronic device and their relationships to each other can be obscured, which is why actual interconnects are not shown.

[0070] exist Figure 14 and Figure 15 In the circuit 1400 shown, a pair of resistors 1420 and 1440 can be connected in parallel with resistor 1420 in the active region 102 of the substrate 100 and resistor 1440 in the semiconductor body 240 within the trench 120. The shallow trench isolation 1402 covers a portion of the substrate 100 outside the electronic components within the active region 102. Figure 15 (Not marked in the text), and a portion of the substrate 100 outside the electronic components within the active region 104 is covered by shallow trench isolation 1404. Figure 15(Not marked in the original text). In this embodiment, resistor 1420 is located within a single-crystal semiconductor material, and resistor 1440 is located within a polycrystalline semiconductor material. The resistance of resistor 1420 increases with increasing temperature, while the resistance of resistor 1440 decreases with increasing temperature. Therefore, resistors 1420 and 1440 can be designed such that each resistor at least partially cancels out the other as temperature changes. In an embodiment at room temperature (e.g., in the range of 20°C to 25°C), the resistance of resistor 1420 may be within 50% of the resistance of resistor 1440. As the difference in resistance increases at a particular temperature (e.g., at room temperature), the ability of resistors 1420 and 1440 to compensate for each other may decrease.

[0071] exist Figure 16 and Figure 17 In another circuit 1600 shown, a similar pair of resistors 1620 and 1640 can be used as part of a temperature sensing circuit. A battery 1610 or other voltage source can be connected to the terminals of resistors 1620 and 1640. The other terminals of resistors 1620 and 1640 are electrically connected at node 1650. Output voltage (V) OUT Measurements can be taken between node 1650 and either terminal of battery 1610 or other voltage source. Figure 16 As shown, V OUT Measurements are taken between the negative terminal of battery 1610 and node 1650. Similar to a previous embodiment, resistor 1620 is in the active region 102 of substrate 100, and resistor 1640 is within the semiconductor body 240 within trench 120. In another embodiment, the positions of resistors 1620 and 1640 may be reversed. Because temperature changes have opposite effects on the resistance of resistors 1620 and 1640, circuit 1600 may be more sensitive to temperature changes than a temperature sensing circuit that includes resistors only in the active region 102 or only in the semiconductor body 240. Multiple temperature sensors can be used within the electronics to provide a more complete temperature distribution of the electronics when in use.

[0072] exist Figure 18 and Figure 19In another circuit shown, inverter 1800 may include resistor 1820 and transistor 1840. One terminal of resistor 1820 is coupled to high-voltage terminal 1802, and another terminal of resistor 1820 is coupled to a current-carrying terminal of transistor 1840 at node 1850, which is coupled to output terminal 1808. The control terminal of transistor 1840 is coupled to input terminal 1806, and another current-carrying terminal of transistor 1840 is coupled to low-voltage terminal 1804. In one embodiment, transistor 1840 is an enhancement-mode transistor. In the illustrated embodiment, transistor 1840 is an n-channel metal-insulator-semiconductor field-effect transistor (MISFET), with high-voltage terminal 1802 at V... DD The lower terminal is electrically connected to the terminal of resistor 1820, and the lower terminal 1804 is at V. SS The input terminal 1806 is electrically connected to the source electrode 1844 of the transistor 1840. The other terminal of the resistor 1820 and the drain electrode 1842 of the transistor 1840 are electrically connected to each other at node 1850.

[0073] Resistor 1820 may be formed within semiconductor body 240. In one embodiment, resistor 1820 may have a relatively high resistance, for example, greater than 0.1 milliohms, and typically in the range of 1 to 10 milliohms. Transistor 1840 may be formed within active region 102 of substrate 100. Interconnects at one or more interconnect levels may be used to connect resistor 1820 and transistor 1840 to each other and to connect electronic components to their corresponding terminals, which may be connected to other parts of the electronics outside inverter 1800.

[0074] Figure 20 and Figure 21 This includes circuits that combine transistors with voltage dividers. Figure 20 In the circuit 2000, a bipolar transistor 2020 and resistors 2042 and 2044 are included. The bipolar transistor 2020 has an associated collector resistance, shown as resistor 2022, and an associated emitter resistance, shown as resistor 2024. In the illustrated embodiment, transistor 2020 is an npn bipolar transistor. Terminals of resistors 2022 and 2042 are coupled to a high-voltage terminal 2002. Another terminal of resistor 2022 is coupled to the collector of transistor 2020. Terminals of resistor 2042, the base of transistor 2020, and the terminal of resistor 2044 are coupled to each other. A terminal of resistor 2024 is coupled to the emitter of transistor 2024, and another terminal of resistor 2044 is coupled to a low-voltage terminal 2004. In one particular embodiment, the high-voltage terminal 2002 may be at V...CC And the low-voltage terminal can be in V EE . Figure 21 The circuit 2100 is similar, except that transistor 2020 and resistors 2022 and 2024 are replaced by a junction field-effect transistor 2120, which has an associated drain resistance shown as resistor 2122 and an associated source resistance shown as resistor 2124. The high-voltage terminal 2002 can be at V... DD And the low-voltage terminal can be in V SS Transistors 2020 and 2120 and their associated resistors 2022, 2024, 2122, and 2124 may be located within the active region of substrate 100, and one or both of resistors 2042 and 2044 may be located within semiconductor body 240. In another embodiment, one of resistors 2042 or 2044 may be located within the active region of the substrate, and for transistors 2020 or 2120, such active regions may be the same or different active regions.

[0075] Figures 22 to 25 The diagram includes a more complex circuit 2200 that allows for different layout options. Circuit 2200 includes resistors 2242, diodes 2262 and 2264, and transistor 2222. Input terminal 2206 is coupled to a terminal of resistor 2242, and a high-voltage terminal 2202 is coupled to the cathode of diode 2262. Another terminal of resistor 2242, the anode of diode 2262, the cathode of diode 2264, and the gate electrode of transistor 2222 are coupled to each other. A low-voltage terminal 2204 is coupled to the anode of diode 2264. The current-carrying terminal of transistor 2222 is coupled to other electronic components or terminals of the electronic device. In the illustrated embodiment, transistor 2222 is a MISFET, and in another embodiment (not shown), transistor 2222 may be a bipolar transistor. Circuit 2200 is well-suited for high-speed logic circuits (e.g., switching speeds of at least 1 MHz). Therefore, transistor 2222 may be a logic transistor. Resistor 2242 helps limit the current flowing to the gate electrode of transistor 2222. Diodes 2262 and 2264 help limit the voltage that may be seen at the gate electrode during electrostatic discharge events, voltage overshoot at input terminal 2206, etc.

[0076] Transistor 2222 is located in frame 2220, resistor 2242 in frame 2240, and diodes 2262 and 2264 in frame 2260. Frames 2220, 2240, and 2260 can correspond to different locations within different parts of the electronic device. Transistor 2222 (frame 2220) can be located within the active region of substrate 100, resistor 2242 (frame 2240) can be located within the active region of semiconductor body 240 or substrate 100, and diodes 2262 and 2264 (frame 2260) can be located within the active region of semiconductor body 240 or substrate 100. Figures 23 to 25 As shown, the physical design of circuit 2200 can be adapted to specific applications by placing components in boxes in various locations.

[0077] Figure 23 The configuration includes an electronic component layout in which the electronic components of frames 2220 and 2260 are located within the same active region of the substrate, and the electronic components of frame 2240 are located within semiconductor body 240. Transistor 2222 and diodes 2262 and 2264 are isolated from each other by shallow trench isolation 1402. In another embodiment, diodes 2262 and 2264 may have similar... Figure 11 and Figure 13 The diagram shows the layout of a group of diodes 1130. The drain region 2322 is coupled to another part of the electronic device, and the source region 2324 is coupled to another part of the electronic device. In the illustrated embodiment, one end of the gate electrode 2326 is electrically connected to the N-terminal of diode 2262. + The P region and diode 2264 + The other end of the gate electrode 2326 is electrically connected to a terminal of resistor 2242 within the semiconductor body 240. The other terminal of resistor 2242 is coupled to input terminal 2206. The P-terminal of diode 2262... + The diode is decoupled to the high-voltage terminal 2202, and the N-terminal of diode 2264 is connected to the high-voltage terminal 2202. + The local coupling is connected to the low-voltage terminal 2204.

[0078] Figure 24 The arrangement includes an electronic component of frame 2220 located within an active region of a substrate, and electronic components of frames 2240 and 2260 located within a semiconductor body 240. Figure 24 Similar to Figure 23The difference is that diodes 2262 and 2264 are located within a portion of the semiconductor body 240 spaced apart from resistor 2242, and the shape of resistor 2242 is altered. Resistor 2242 may be located within active region 102 or 104, rather than within semiconductor body 240, if desired or desired. Furthermore, one of diodes 2262 and 2264 may be located within semiconductor body 240, and the other of diodes 2262 and 2264 may be located within active region 102 or 104. Gate electrode 2326 extends to diodes 2262 and 2264 and may be electrically connected to the anode of diode 2262 and the cathode of diode 2264 using silicide components or interconnects.

[0079] Figure 25 The configuration includes an electronic component layout in which the electronic components of frames 2220 and 2260 are located within different active regions of a substrate, and the electronic components of frame 2240 are located within a semiconductor body 240. In one embodiment, the different active regions are arranged along opposite sides of a trench 120 including the semiconductor body 240. In the illustrated embodiment, transistor 2222 is located in active region 102 ( Figure 25 (not marked in the text) and diodes 2262 and 2264 are in the active region 104 ( Figure 25 (Not marked in the text) and, compared to active region 102, active region 104 is arranged along opposite sides isolated by a deep trench within trench 120. In another embodiment, one of diodes 2262 and 2264 may be within active region 104, and the other of diodes 2262 and 2264 may be within active region 102. In yet another embodiment, one of diodes 2262 and 2264 may be within semiconductor body 240, and the other of diodes 2262 and 2264 may be within active region 102 or 104.

[0080] After reading this manual, technicians will understand that many other physical designs, including layouts, can be used to achieve the needs or expectations of an application. Figures 23 to 25 The embodiments shown are intended to be exemplary and do not limit the scope of the invention.

[0081] Figure 26 and Figure 27 This includes a switching circuit 2600 that can be used as an energy converter, such as a buck converter or voltage regulator. Circuit 2600 includes a high-side transistor 2622, a low-side transistor 2624, diodes 2662 and 2664, and resistors 2642 and 2644. The circuit may also include other electronic components not shown, such as inductors and capacitors coupled to output terminal 2608.

[0082] refer to Figure 26The high-side transistor 2622 has a current-carrying terminal coupled to a high-voltage terminal 2602. A control terminal of transistor 2622 is coupled to a high-side control circuit including a resistor 2642, and another current-carrying terminal of transistor 2622 is coupled to a current-carrying terminal of the low-side transistor 2624 at node 2650. A control terminal of transistor 2624 is coupled to a low-side control circuit including a resistor 2644, and another current-carrying terminal of transistor 2624 is coupled to a low-voltage terminal 2604. In one embodiment, transistors 2622 and 2624 are MISFETs, and in a particular embodiment, they are n-channel MISFETs. The source of the high-side transistor 2622 is coupled to the drain of the low-side transistor 2624. The high-side control circuit may include gate driver circuitry for transistor 2622, and the low-side control circuitry may include gate driver circuitry for transistor 2624. In a particular embodiment, each of transistors 2622 and 2624 is a power transistor.

[0083] The cathode of diode 2662 is coupled to high-voltage terminal 2602, the anode of diode 2662 and the cathode of diode 2664 are coupled to node 2650, and the anode of diode 2664 is coupled to low-voltage terminal 2604. Diodes 2662 and 2664 may have a voltage lower than the breakdown voltage between current-carrying terminals (e.g., BV). DS The breakdown voltage is set to protect transistors 2622 and 2624 during voltage overshoot that may occur during switching operation of circuit 2600. Node 2650 is coupled to output terminal 2608.

[0084] exist Figure 26 In this circuit, transistor 2622 and diode 2662 are located in frame 2610, transistor 2624 and diode 2664 are located in frame 2630, and resistors 2642 and 2644 are located in frame 2640. In one embodiment, the electronic components in frame 2610 are located within the active region of substrate 100, resistors 2642 and 2644 (frame 2640) are located within semiconductor body 240, and the electronic components in frame 2630 are located within different active regions of substrate 100, or may be located on a die separate from the rest of circuit 2600.

[0085] Figure 27An exemplary embodiment including components within frames 2610, 2630, and 2640. In this embodiment, each transistor and its corresponding diode are located within the same active region, such that each diode provides good control over the voltage across its corresponding transistor to reduce the effects of voltage overshoot, which may be in the form of ringing at node 2650. The electronic components within frames 2610 and 2630 are arranged along opposite sides of trench 120. Resistors 2642 and 2644 within frame 2640 may be located within a portion of the semiconductor body 240 within trench 120.

[0086] like Figure 27 As shown, shallow trench isolations 2612, 2614, 2616, and 2618 cover the active regions of substrate 100. For example, shallow trench isolation 2612 may cover active region 102, shallow trench isolation 2614 may cover active region 104, and shallow trench isolation 2616 may cover another active region, and shallow trench isolation 2618 may cover another active region. Although not shown, other electronic components can be formed within any of the active regions. For example, other electronic components for high-side control circuitry may be located within the active region below shallow trench isolation 2616, and other electronic components for low-side control circuitry may be located within the active region below shallow trench isolation 2618.

[0087] In the illustrated embodiment, transistor 2622 includes a source electrode 26224, a gate electrode 26224, and a drain electrode 26226. Drift region 26228 is shown in dashed lines because it is located below shallow trench isolation 2612. Diode 2662 is also located within the same active region as transistor 2622. Drain electrode 26222 is shown as having a P-terminal to high-voltage terminal 2602 and diode 2662. + The gate electrodes 26226 are connected to each other and coupled to the terminals of resistor 2642, and the other terminal of resistor 2642 is coupled to another electronic component in the active region below the shallow trench isolation 2616. Source electrode 26224 is shown as having an N-channel connection to diode 2662. + The connection between districts.

[0088] In the illustrated embodiment, transistor 2624 includes a source electrode 26244, a gate electrode 26246, and a drain electrode 26246. Drift region 26248 is shown in dashed lines because it is located below shallow trench isolation 2614. Diode 2664 is also located within the same active region as transistor 2624. Drain electrode 26242 is shown as having a P-type connection to diode 2664. +The gate electrodes 26246 are connected to each other and coupled to the terminals of resistor 2644, and the other terminal of resistor 2644 is coupled to another electronic component in the active region below the shallow trench isolation 2618. The source electrode 26244 is shown as an N-type electrode with connections to the low-voltage terminal 2604 and diode 2664. + The connection between districts.

[0089] The source electrode 26224 of the high-side transistor 2622, and the N-side electrode of the diode 2662 + The drain electrode 26242 of the low-side transistor 2624 and the P-type diode 2664 + The sections are coupled to each other at node 2650. Node 2650 is coupled to output terminal 2608. In the illustrated embodiment, node 2650 is electrically connected to output terminal 2608. In another embodiment, a capacitor (not shown) may be coupled between output node 2650 and low-voltage terminal 2604, and an inductor (not shown) may be coupled between output node 2650 and output terminal 2608. The capacitor and inductor can help reduce ringing at output node 2650 during switching operation and reduce the amount of current surge to the load (not shown) coupled between output terminal 2608 and low-voltage terminal 2604.

[0090] Apart from Figure 27 Besides the circuit shown, many other physical designs can also be used. Figure 26 The circuitry may include, for example, diodes 2662 and 2664, one or both of which may be formed within the semiconductor body 240. Resistors 2642 and 2644 may be formed in the same active region corresponding to shallow trench isolation 2616 or 2618. In another embodiment, the semiconductor die may include a high-side transistor 2622 and its corresponding control circuitry, and another semiconductor die may include a low-side transistor 2624 and its corresponding control circuitry. Further physical designs are possible.

[0091] After reading this specification, those skilled in the art will understand that the physical design, including the layout shown, is simplified. In practice, the concepts described herein can be used to implement more complex and densely packaged components. Furthermore, power transistors can have more contacts as shown to allow sufficient current to flow through such power transistors.

[0092] The embodiments described herein can be used to form resistors and diodes within a semiconductor body that would otherwise not contain any electronic components. The semiconductor body may be a portion of a semiconductor material filling a trench that is part of a deep trench isolation structure. The semiconductor body can be isolated from adjacent active regions by an insulating layer; therefore, the semiconductor body may include one or more electronic components coupled to electronic components within the active regions on either side or both sides of the deep isolation trench. When doped regions of the electronic components are formed in the active regions, the process for forming the electronic components within the semiconductor body can be integrated with existing process flows. Therefore, no additional mask operations or process steps are required.

[0093] Many different aspects and embodiments are possible. Some of those aspects and embodiments are described below. Upon reading this specification, those skilled in the art will recognize that those aspects and embodiments are merely exemplary and do not limit the scope of the invention. Embodiments may be implemented according to any one or more of the items listed below.

[0094] Implementation Scheme 1. An electronic device may include: a substrate defining a trench having a depth of at least 5 micrometers; a semiconductor body within the trench, wherein the semiconductor body has an upper surface and a resistivity of at least 0.05 ohm-cm and is electrically isolated from the substrate; and a first electronic component within and along the upper surface of the semiconductor body, wherein the first electronic component is spaced apart from the bottom of the semiconductor body.

[0095] Implementation Scheme 2. The electronic device according to Implementation Scheme 1 further includes an insulating layer disposed between the semiconductor body and the sides and bottom of the trench.

[0096] Implementation Scheme 3. The electronic device according to Implementation Scheme 1, wherein the substrate comprises a single-crystal semiconductor material and the semiconductor body comprises a polycrystalline semiconductor material.

[0097] Implementation Scheme 4. The electronic device according to Implementation Scheme 1, wherein the first electronic component includes a first doped region within a semiconductor body, wherein the dopant concentration of the first doped region is higher than the background dopant concentration of the semiconductor body, and a portion of the semiconductor body outside the first doped region is located vertically below and laterally beside the first doped region.

[0098] Implementation Scheme 5. The electronic device according to Implementation Scheme 4, wherein the first electronic component is a diode, and further includes a second doped region having a opposite conductivity type to the first doped region.

[0099] Implementation Scheme 6. The electronic device according to Implementation Scheme 4, wherein the first electronic component is a resistor including a first doped region, the first doped region being a well region extending to a depth less than half the depth of the trench.

[0100] Implementation Scheme 7. The electronic device according to Implementation Scheme 1 further includes a first doped region and a second doped region spaced apart from the first doped region, wherein the first and second doped regions have the same conductivity type, each of the first and second doped regions has a dopant concentration higher than that of the semiconductor body, and a portion of the semiconductor body having a resistivity of at least 0.05 ohm-cm is disposed between the first and second doped regions.

[0101] Implementation Scheme 8. An electronic device may include: a substrate defining a trench; a first electronic component within a first active region of the substrate, wherein the first active region is outside the trench; an isolation structure within the trench and adjacent to the first electronic component; and a second electronic component within the isolation structure.

[0102] Implementation Scheme 9. The electronic device according to Implementation Scheme 8, wherein the isolation structure includes: a semiconductor body including at least a portion located below the second electronic component; and an insulating layer disposed along the sides and bottom of the trench and electrically isolating the semiconductor body from the substrate.

[0103] Implementation Scheme 10. The electronic device according to Implementation Scheme 9, wherein the first active region comprises a single-crystal semiconductor material, and the semiconductor body and the second electronic component comprise a polycrystalline semiconductor material.

[0104] Implementation Scheme 11. The electronic device according to Implementation Scheme 8 further includes a third electronic component in a second active region of the substrate, wherein an isolation structure is disposed between the first and third electronic components.

[0105] Implementation Scheme 12. The electronic device according to Implementation Scheme 11, wherein:

[0106] The first electronic component is a power transistor or a logic transistor, and

[0107] The third electronic component is another type of power transistor or logic transistor.

[0108] Implementation Scheme 13. The electronic device according to Implementation Scheme 12, wherein the power transistor includes a metal-insulator-semiconductor field-effect transistor, an insulated-gate bipolar transistor, or a bipolar transistor.

[0109] Implementation Scheme 14. The electronic device according to Implementation Scheme 8, wherein the first electronic component is a transistor and the second electronic component is a resistor coupled to the transistor.

[0110] Implementation Scheme 15. The electronic device according to Implementation Scheme 8, wherein the first electronic component is a transistor and the second electronic component is a diode coupled to the transistor.

[0111] Implementation Scheme 16. The electronic device according to Implementation Scheme 8, wherein the first electronic component is a first resistor, the second electronic component is a second resistor, and the first and second resistors are connected in parallel.

[0112] Implementation Scheme 17. The electronic device according to Implementation Scheme 16, wherein the first resistor has a body comprising a single-crystal semiconductor material and the second resistor has a body comprising a polycrystalline semiconductor material.

[0113] Implementation Scheme 18. An electronic device may include: a substrate defining a trench; a semiconductor body within the trench, wherein the semiconductor body has a resistivity of at least 0.05 ohm-cm and is electrically isolated from the substrate; and a diode within the semiconductor body.

[0114] Implementation Scheme 19. The electronic device according to Implementation Scheme 18, wherein the semiconductor body and the diode comprise polycrystalline semiconductor material.

[0115] Implementation Scheme 20. The electronic device according to Implementation Scheme 19 further includes a first electronic component and a second electronic component, wherein the isolation structure includes a semiconductor body and an insulating layer electrically isolating the semiconductor body from a substrate, the first electronic component is along a first side of the isolation structure, the second electronic component is along a second side of the isolation structure opposite to the first side, and each of the first electronic component, the second electronic component, or the first and second electronic components is coupled to a diode.

[0116] Other implementation schemes may include any of the following items.

[0117] 1. An electronic device, the electronic device comprising:

[0118] Substrate, which defines the trench;

[0119] A first electronic component is located within a first active region of a substrate, wherein the first active region is outside a trench.

[0120] An isolation structure, which is located within the trench and adjacent to the first electronic component; and

[0121] The second electronic component is located within the isolation structure.

[0122] 2. The electronic device according to Project 1, wherein the isolation structure includes:

[0123] A semiconductor body, including at least a portion located below the second electronic component;

[0124] Know

[0125] An insulating layer is arranged along the sides and bottom of the trench and electrically isolates the semiconductor body from the substrate.

[0126] 3. The electronic device according to Item 2, wherein the first active region comprises a single-crystal semiconductor material, and the semiconductor body and the second electronic component comprise a polycrystalline semiconductor material.

[0127] 4. The electronic device according to any one of items 1 to 3 further includes a third electronic component in a second active region of the substrate, wherein an isolation structure is disposed between the first and third electronic components.

[0128] 5. The electronic device according to Project 4, wherein:

[0129] The first electronic component is a power transistor or a logic transistor, and

[0130] The third electronic component is another type of power transistor or logic transistor.

[0131] 6. The electronic device according to any one of items 1 to 3, wherein the first electronic component is a transistor and the second electronic component is a resistor or a diode, wherein the first electronic component is coupled to the second electronic component.

[0132] 7. The electronic device according to any one of items 1 to 3, wherein the first electronic component is a first resistor, the second electronic component is a second resistor, and the first and second resistors are connected in parallel.

[0133] 8. The electronic device according to item 7, wherein the first resistor has a body comprising a single-crystal semiconductor material and the second resistor has a body comprising a polycrystalline semiconductor material.

[0134] 9. An electronic device, the electronic device comprising:

[0135] Substrate, which defines the trench;

[0136] A semiconductor body located within a trench, wherein the semiconductor body has a resistivity of at least 0.05 ohm-cm and is electrically isolated from the substrate; and

[0137] A diode, which is located within a semiconductor body,

[0138] The semiconductor body and diode contain polycrystalline semiconductor materials.

[0139] 10. An electronic device, the electronic device comprising:

[0140] A substrate comprising a single-crystal semiconductor material and defining trenches with a depth of at least 5 micrometers;

[0141] A semiconductor body located within a trench, wherein the semiconductor body comprises a polycrystalline semiconductor material, has an upper surface having a resistivity of at least 0.05 ohm-cm, and is electrically isolated from a substrate; and

[0142] A first electronic component is located within and along the upper surface of the semiconductor body, wherein the first electronic component is spaced apart from the bottom of the semiconductor body.

[0143] It should be noted that not all activities described in the general description or examples above are required; some specific activities may not be necessary, and one or more additional activities may be performed in addition to those described. Furthermore, the order in which the activities are listed is not necessarily the order in which they are performed.

[0144] The beneficial effects, other advantages, and solutions to problems have been described above with respect to specific embodiments. However, these beneficial effects, advantages, solutions to problems, and any features that may lead to or make more apparent any beneficial effect, advantage, or solution should not be construed as critical, necessary, or essential features of any or all claims.

[0145] The description and illustrations of the embodiments described herein are intended to provide a general understanding of the structure of various embodiments. The description and illustrations are not intended to be an exhaustive and comprehensive description of all elements and features of devices and systems using the structures or methods described herein. Individual embodiments may also be provided in combination in a single embodiment; conversely, various features described in the context of a single embodiment for simplicity may also be provided individually or in any sub-combination. Furthermore, references to values ​​expressed as ranges include all values ​​within that range. Many other embodiments will be apparent only to those skilled in the art upon reading this specification. Other embodiments may be used and derived from this disclosure, such that structural substitutions, logical substitutions, or other changes can be made without departing from the scope of this disclosure. Therefore, this disclosure should be considered exemplary and not restrictive.

Claims

1. An electronic device, the electronic device comprising: A substrate, the substrate defining a trench having a depth of at least 5 micrometers; A first electronic component, wherein the first electronic component is located within a first active region of the substrate; An isolation structure, the isolation structure being located within the trench and surrounding the first electronic component, wherein the isolation structure comprises: A semiconductor body located within the trench, wherein the semiconductor body has a resistivity of at least 0.05 ohm-cm; and An insulating layer, disposed along the sides and bottom of the trench, electrically isolating the semiconductor body from the substrate; and A second electronic component is located within the semiconductor body, wherein at least a portion of the semiconductor body within the trench is located below the second electronic component.

2. The electronic device according to claim 1, wherein, The first active region comprises a single-crystal semiconductor material, and the entire semiconductor body and the second electronic component comprise a polycrystalline semiconductor material.

3. The electronic device according to any one of claims 1 to 2, further comprising a third electronic component within a second active region of the substrate, wherein, The isolation structure is disposed between the first electronic component and the third electronic component.

4. The electronic device according to claim 3, wherein: The first electronic component is a power transistor or a logic transistor, and The third electronic component is another of the power transistor or the logic transistor.

5. The electronic device according to any one of claims 1 to 2, wherein, The first electronic component is a transistor, and the second electronic component is a resistor coupled to the transistor.

6. The electronic device according to claim 1, wherein, The semiconductor body comprises a polycrystalline semiconductor material, and the second electronic component comprises a diode.

7. An electronic device, comprising: Substrate, the substrate defining the trench; A first electronic component, wherein the first electronic component is located within a first active region of the substrate; An isolation structure, the isolation structure being located within the trench and surrounding the first electronic component, wherein the isolation structure comprises: A semiconductor body located within the trench; An insulating layer, disposed along the sides and bottom of the trench, electrically isolating the semiconductor body from the substrate; and A second electronic component is located within the trench, wherein at least a portion of the semiconductor body within the trench is located below the second electronic component. Wherein, the first electronic component is a first resistor, the second electronic component is a second resistor, and the first and second resistors are connected in parallel. The first resistor has a body comprising a single-crystal semiconductor material, and the second resistor has a body comprising a polycrystalline semiconductor material.

8. An electronic device, the electronic device comprising: A substrate, the substrate defining a trench having a depth of at least 5 micrometers; A semiconductor body within the trench, wherein the semiconductor body has a resistivity of at least 0.05 ohm-cm and is electrically isolated from the substrate; and A diode, said diode being located within the semiconductor body, Wherein, the semiconductor body and the diode comprise polycrystalline semiconductor materials, and In this configuration, at least a portion of the semiconductor body within the trench is located below the diode.

9. An electronic device, the electronic device comprising: A substrate comprising a single-crystal semiconductor material and defining trenches with a depth of at least 5 micrometers; A semiconductor body within the trench, wherein the semiconductor body comprises a polycrystalline semiconductor material, has an upper surface having a resistivity of at least 0.05 ohm-cm, and is electrically isolated from the substrate; and A first electronic component is located within the semiconductor body and along the upper surface of the semiconductor body, wherein the first electronic component is spaced apart from the bottom of the semiconductor body.

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