Thin film growth sample holder

Abstract

The present application provides a thin film growth sample holder, comprising a tray and a pressing plate mounted on the tray, wherein a first through hole is provided on the pressing plate, and a carrier disc is installed in the first through hole. The diameter of the first through hole away from one end of the tray is less than 2.8 mm, and the diameter of the first through hole close to one end of the tray is greater than or equal to 3.2 mm, and the diameter range of the carrier disc is 2.8 mm-3.2 mm. By providing the first through hole on the pressing plate, the first through hole can be used for the carrier disc to extend into and fix it. When the thin film is grown by molecular beam epitaxy technology, a thin film with a diameter of about 3 mm can be formed on the carrier disc. Since the diameter of the carrier disc meets the size requirement of the sample required by the sample rod of the transmission electron microscope, the carrier disc carrying the thin film can be directly placed in the sample rod of the transmission electron microscope, which is convenient for observing the thin film and can solve the problem that a centimeter-level substrate cannot be directly placed in the sample rod of the transmission electron microscope to observe the thin film.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor preparation technology, and more specifically, relates to a thin film growth sample holder. Background Art

[0002] Molecular beam epitaxy (MBE) is a highly effective method for growing single-crystal thin films. The material to be grown is placed in an evaporation source. Through heating, electrical current, or laser irradiation, the molecules or atoms in the evaporation source are converted into a gas that enters the growth chamber and is incident on the substrate, where it is deposited and forms a thin film. Controlling the substrate temperature can control the epitaxial growth rate and growth characteristics of the film. A sample holder is required to support the substrate in the growth chamber.

[0003] Transmission electron microscopy (TEM) is typically used to observe thin film growth. Due to limitations in the TEM sample holder, current MBE sample holders are only suitable for centimeter-scale substrates, which cannot be directly placed in the TEM sample holder. Consequently, thin film observation using TEM is impossible. Summary of the Invention

[0004] The purpose of the embodiments of the present application is to provide a thin film growth sample holder to solve the problem in the related art that the sample holder used for molecular beam epitaxy is only suitable for centimeter-scale substrates, and the centimeter-scale substrates cannot be directly placed in the sample rod of TEM, resulting in the inability to observe the thin film through TEM.

[0005] To achieve the above objectives, the technical solutions adopted in the embodiments of the present application are:

[0006] A thin film growth sample holder is provided, comprising:

[0007] tray;

[0008] A pressing sheet is mounted on the tray, and a first through hole is formed on the pressing sheet;

[0009] A carrier wafer, disposed in the first through hole, for supporting the growth of the thin film;

[0010] The diameter of the first through hole away from the end of the tray is less than 2.8 mm, the diameter of the first through hole close to the end of the tray is greater than or equal to 3.2 mm, and the diameter range of the object carrier wafer is 2.8 mm-3.2 mm.

[0011] In one embodiment, the diameter of the first through hole gradually increases from the pressing sheet toward the tray.

[0012] In one embodiment, the inner circumference of the first through hole is a first inclined surface, and the outer circumference of the object carrier wafer is a second inclined surface matching the first inclined surface.

[0013] In another embodiment, the first through hole includes a first via hole and a second via hole coaxially arranged with the first via hole, the first via hole is connected to the second via hole, the diameter of the first via hole is larger than the diameter of the second via hole, and a first step surface supporting the carrier wafer is formed between the first via hole and the second via hole.

[0014] In one embodiment, a second through hole is formed on the tray, and a third through hole is correspondingly formed on the pressing sheet, and the third through hole is spaced apart from the first through hole.

[0015] In one embodiment, the second through hole includes a third via hole and a fourth via hole coaxially arranged with the third via hole, the third via hole is connected to the fourth via hole, the diameter of the third via hole is larger than the diameter of the fourth via hole, and a second step surface is formed between the third via hole and the fourth via hole.

[0016] In one embodiment, a cross-sectional area of the second through hole is greater than a cross-sectional area of the third through hole.

[0017] In one embodiment, a plurality of first mounting holes are provided on the tray, and a second mounting hole is provided on the pressing plate at a position corresponding to each of the first mounting holes; the second through holes are spaced apart from each of the first mounting holes, the first through holes are spaced apart from each of the second mounting holes, and the third through holes are spaced apart from each of the second mounting holes.

[0018] In one embodiment, the diameter of the slide is 3 mm.

[0019] In one embodiment, the cross-sectional area of the tray is larger than the cross-sectional area of the pressed tablet.

[0020] One or more of the above technical solutions in the embodiments of the present application have at least one of the following technical effects: The present application provides a first through hole on the pressing sheet, wherein the diameter of the first through hole near the tray end is greater than or equal to 3.2 mm, and the diameter of the first through hole away from the tray end is less than 2.8 mm, thereby allowing a carrier disc to be inserted and fixed thereto. When thin films are grown using molecular beam epitaxy technology, a thin film with a diameter of approximately 3 mm can be formed on the carrier disc. Since the diameter of the sample for transmission electron microscopy observation needs to be controlled at approximately 3 mm, the diameter of the carrier disc meets the sample size requirements of the sample holder of the transmission electron microscope. Therefore, the carrier disc carrying the thin film can be directly placed in the sample holder of the transmission electron microscope, facilitating the observation of the thin film. This can effectively solve the problem that centimeter-level substrates cannot be directly placed in the sample holder of the transmission electron microscope to observe the thin film. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the embodiments or exemplary technical descriptions. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0022] Figure 1 A schematic diagram of the structure of a thin film growth sample holder provided in Example 1 of the present application;

[0023] Figure 2 An exploded schematic diagram of a thin film growth sample holder provided in Example 1 of the present application;

[0024] Figure 3 A cross-sectional schematic diagram of the connection between the pressing sheet and the carrier wafer provided in Example 1 of the present application;

[0025] Figure 4 This is an exploded schematic diagram of the cross-sectional schematic diagram of the connection between the pressing plate and the carrier wafer provided in Example 1 of the present application;

[0026] Figure 5 for Figure 4 A magnified schematic diagram of point A in the middle;

[0027] Figure 6 A schematic cross-sectional view of a tray provided in Example 1 of the present application;

[0028] Figure 7 for Figure 6 A magnified schematic diagram of point B in the middle;

[0029] Figure 8 A cross-sectional schematic diagram showing the connection between the pressing sheet and the carrier wafer provided in Example 2 of the present application;

[0030] Figure 9 This is an exploded schematic diagram of the cross-sectional schematic diagram of the connection between the pressing plate and the carrier wafer provided in Example 2 of the present application;

[0031] Figure 10 This is an exploded schematic diagram of a partial cross-sectional schematic diagram of the connection between the pressing plate and the carrier wafer provided in Example 3 of the present application;

[0032] Figure 11 This is a partial cross-sectional schematic diagram of the tray provided in Example 3 of the present application.

[0033] Among them, the main marks of the drawings in the figure are:

[0034] 1 - tray; 10 - second through hole; 101 - third through hole; 102 - fourth through hole; 103 - second step surface; 11 - first mounting hole; 12 - positioning groove; 13 - notch; 14 - positioning hole;

[0035] 2-pressing sheet; 20-first through hole; 201-first via hole; 202-second via hole; 203-first step surface; 204-first inclined surface; 21-third through hole; 22-second mounting hole;

[0036] 3-object disc; 31-second inclined surface. DETAILED DESCRIPTION

[0037] In order to make the technical problems, technical solutions and beneficial effects to be solved by this application more clearly understood, this application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain this application and are not intended to limit this application.

[0038] It should be noted that when an element is referred to as being “fixed on” or “disposed on” another element, it may be directly on the other element or indirectly on the other element. When an element is referred to as being “connected to” another element, it may be directly connected to the other element or indirectly connected to the other element.

[0039] In addition, the terms "first," "second," "third," and "fourth" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, a feature defined as "first," "second," "third," or "fourth" may explicitly or implicitly include one or more of the features. In the description of this application, "multiple" means two or more, unless otherwise clearly and specifically defined. "Several" means one or more, unless otherwise clearly and specifically defined.

[0040] In the description of this application, it should be understood that the terms "center", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application.

[0041] In the description of this application, it should be noted that, unless otherwise expressly specified or limited, the terms "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections or electrical connections; they can refer to direct connections or indirect connections through an intermediate medium; they can refer to internal communication between two components or the interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in this application based on the specific circumstances.

[0042] Reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. Thus, when the phrases "in one embodiment" or "in some embodiments" appear in various places throughout this specification, not all references are to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

[0043] Example 1

[0044] See also Figures 1 to 3 , the thin film growth sample holder provided in the first embodiment of the present application is now described. The thin film growth sample holder includes a tray 1 and a pressing plate 2 mounted on the tray 1, with a first through hole 20 provided on the pressing plate 2; the thin film growth sample holder also includes a carrier disc 3 provided in the first through hole 20. The diameter of the carrier disc 3 ranges from 2.8 mm to 3.2 mm, the diameter of the first through hole 20 at the end away from the tray 1 is less than 2.8 mm, and the diameter of the first through hole 20 at the end close to the tray 1 is greater than or equal to 3.2 mm, so that the carrier disc 3 can be inserted and fixed. The tray 1 can be used to support the substrate. When the thin film is grown by molecular beam epitaxy, the source evaporated in the MBE will be deposited on the carrier disc 3 or the substrate, so that a thin film can be grown on the carrier disc 3 or the substrate. The number of the first through holes 20 can be adjusted according to actual needs, such as four, five, six, etc., and is not limited here.

[0045] When in use, the pressing sheet 2 is connected and fixed to the tray 1 and then turned over so that the pressing sheet 2 faces downward, the tray 2 faces upward, the end of the first through hole 20 of the pressing sheet 2 with a smaller diameter faces downward, and the end of the first through hole 20 of the pressing sheet 2 with a larger diameter faces upward, so as to facilitate supporting and fixing the object carrier disc 3 in the first through hole 20.

[0046] This structure, by providing a first through hole 20 on the pressing plate 2, wherein the diameter of the first through hole 20 near the end of the tray 1 is greater than or equal to 3.2 mm, and the diameter of the first through hole 20 away from the end of the tray 1 is less than 2.8 mm, allows the carrier disc 3 to be inserted and fixed thereto. When thin films are grown using molecular beam epitaxy technology, a thin film with a diameter of approximately 3 mm can be formed on the carrier disc 3. Since the diameter of the sample used for transmission electron microscopy observation needs to be controlled at approximately 3 mm, the diameter of the carrier disc 3 meets the sample size requirements of the sample rod of the transmission electron microscope. Therefore, the carrier disc 3 carrying the thin film can be directly placed in the sample rod of the transmission electron microscope, facilitating the observation of the thin film. This can effectively solve the problem that centimeter-level substrates cannot be directly placed in the sample rod of the transmission electron microscope to observe the thin film.

[0047] In one embodiment, see Figure 5 As a specific embodiment of the thin film growth sample holder provided in Example 1 of the present application, the diameter of the first through-hole 20 gradually increases from the pressing plate 2 toward the tray 1. With this structure, the carrier disc 3 can be inserted into the first through-hole 20 from the larger diameter end of the first through-hole 20. The smaller diameter end of the first through-hole 20 prevents the carrier disc 3 from slipping out of the first through-hole 20, thereby supporting and securing the carrier disc 3. By providing the first through-hole 20 through the pressing plate 2, the side of the carrier disc 3 facing the smaller diameter of the first through-hole 20 can be used for thin film growth. The carrier disc 3 can be made of a nano-Si-SiN composite material, while the pressing plate 2 can be made of molybdenum. In this structure, both the nano-Si-SiN composite material and molybdenum have excellent corrosion resistance and high temperature resistance. During the thin film growth process, the carrier disc 3 and pressing plate 2 are less susceptible to degradation due to external conditions. In other embodiments, the carrier disc 3 and pressing plate 2 can also be made of other materials, and this is not intended to be a limitation.

[0048] In some embodiments, when the thickness of the pressing sheet 2 is relatively small, the first through hole 20 may extend outward to form a flange, thereby solving the problem that the pressing sheet 2 is not thick enough to accommodate the carrier wafer 3 .

[0049] In one embodiment, see Figure 5As a specific embodiment of the thin film growth sample holder provided in Example 1 of the present application, the inner circumference of the first through hole 20 is a first inclined surface 204, and the outer circumference of the carrier disc 3 is a second inclined surface 31 that cooperates with the first inclined surface 204. With this structure, the carrier disc 3 and the first through hole 20 can form a truncated cone structure; the diameter of the carrier disc 3 gradually increases from its top to its bottom. When the carrier disc 3 is inserted into the first through hole 20, the first inclined surface 204 can cooperate with the second inclined surface 31 to guide the carrier disc 3, so that the carrier disc 3 can maintain a horizontal position, thereby obtaining a uniform thin film. When the carrier disc 3 is inserted into a certain position in the first through hole 20, the first through hole 20 can clamp the carrier disc 3 to prevent it from falling off.

[0050] In some embodiments, the specimen wafer 3 may be cylindrical or have other configurations. In other embodiments, a plurality of grooves are formed on the outer circumference of the specimen wafer 3 to prevent the outer circumference of the specimen wafer 3 from tightly adhering to the inner circumference of the first through hole 20, thereby preventing the specimen wafer 3 from being removed from the first through hole 20.

[0051] In one embodiment, see Figure 2 As a specific embodiment of the thin film growth sample holder provided in Example 1 of the present application, a second through-hole 10 is defined on the tray 1, and a corresponding third through-hole 21 is defined on the pressing plate 2. The third through-hole 21 is spaced apart from the first through-hole 20. With this structure, the second through-hole 10 can support a normal-sized, centimeter-level substrate. During the growth process, the film growth can be observed by reflecting the image of the high-energy electron beam from the substrate onto a fluorescent screen. The corresponding arrangement of the third through-hole 21 with the second through-hole 10 facilitates observation of the thin film on the substrate.

[0052] In one embodiment, see Figure 6 and Figure 7 As a specific embodiment of the thin film growth sample holder provided in Example 1 of the present application, the second through hole 10 includes a third via hole 101 and a fourth via hole 102 coaxially arranged with the third via hole 101. The third via hole 101 is connected to the fourth via hole 102. The diameter of the third via hole 101 is larger than that of the fourth via hole 102. A second step surface 103 is formed between the third via hole 101 and the fourth via hole 102. This structure supports the substrate through the second step surface 103 formed between the third via hole 101 and the fourth via hole 102.

[0053] In some embodiments, the depth of the third via hole 101 can be equal to or less than the depth of the fourth via hole 102. The depth of the third via hole 101 is less than the thickness of the substrate, which facilitates the removal of the substrate. The depth of the third via hole 101 and the depth of the fourth via hole 102 can be adjusted according to actual needs and are not limited here.

[0054] In one embodiment, see Figure 1 and Figure 2 As a specific embodiment of the thin film growth sample holder provided in Example 1 of the present application, the cross-sectional area of the second through hole 10 is greater than the cross-sectional area of the third through hole 21. In this structure, when a substrate is contained in the second through hole 10, since the cross-sectional area of the third through hole 21 is smaller than the cross-sectional area of the second through hole 10, the substrate can be pressed tightly against the tray 1 by the pressing sheet 2, thereby preventing the substrate from shaking. The cross-sectional shape of the third through hole 21 is triangular, which is not the only limitation here. In some embodiments, the cross-sectional area of the second through hole 10 is less than or equal to the cross-sectional area of the third through hole 21.

[0055] In one embodiment, as a specific implementation of the thin film growth sample holder provided in Example 1 of the present application, the diameter of the specimen disc 3 is 3 mm. With this configuration, the diameter of the specimen disc 3 meets the sample size requirements of the sample holder of a transmission electron microscope, allowing the specimen disc 3 to be directly placed in the transmission electron microscope for observation of thin films. In some embodiments, the diameter of the specimen disc 3 can be adjusted according to actual needs, such as 2.8 mm, 2.9 mm, 3.1 mm, or 3.2 mm, although this is not intended to be a single limitation.

[0056] In one embodiment, see Figure 2 As a specific embodiment of the thin film growth sample holder provided in Example 1 of the present application, a plurality of first mounting holes 11 are provided on the tray 1, and second mounting holes 22 are provided on the pressing plate 2 at positions corresponding to the first mounting holes 11; the second through holes 10 are spaced apart from the first mounting holes 11, the first through holes 20 are spaced apart from the second mounting holes 22, and the third through holes 21 are spaced apart from the second mounting holes 22. In this structure, bolts pass through the first mounting holes 11 and the second mounting holes 22 to achieve a fixed connection between the tray 1 and the pressing plate 2. The number of the first mounting holes 11 and the second mounting holes 22 can be adjusted according to actual needs and is not limited here.

[0057] In some embodiments, the first mounting hole 11 and the second mounting hole 22 may both be screw holes, and the tray 1 and the pressing sheet 2 may be fixed by screws.

[0058] In one embodiment, as a specific implementation of the thin film growth sample holder provided in Example 1 of the present application, the cross-sectional area of the tray 1 is larger than the cross-sectional area of the pressing plate 2 , so as to facilitate the support of the pressing plate 2 .

[0059] In some embodiments, see Figure 2The tray 1 is provided with a positioning groove 12 for accommodating the pressing piece 2, and each first mounting hole 11 is provided on the bottom surface of the positioning groove 12. This structure enables the tray 1 and the pressing piece 2 to be quickly positioned and connected through the positioning groove 12, thereby improving the connection accuracy between the tray 1 and the pressing piece 2. The positioning groove 12 can also prevent the pressing piece 2 from shifting.

[0060] In some embodiments, see Figure 2 One end of the tray 1 is provided with a notch 13, and the other end is provided with a positioning hole 14. This structure is convenient for fixing the tray 1.

[0061] Example 2

[0062] See also Figures 8 to 10 The thin film growth sample holder provided in the second embodiment of the present application will now be described. The difference between the thin film growth sample holder provided in the second embodiment of the present application and the thin film growth sample holder provided in the first embodiment is that the first through hole 20 includes a first via hole 201 and a second via hole 202 coaxially arranged with the first via hole 201, the first via hole 201 is connected to the second via hole 202, the diameter of the first via hole 201 is larger than the diameter of the second via hole 202, and a first step surface 203 for supporting the carrier disc 3 is formed between the first via hole 201 and the second via hole 202. In this structure, the first step surface 203 formed between the first via hole 201 and the second via hole 202 can support and fix the carrier disc 3, ensuring that the carrier disc 3 is in a horizontal position. Among them, the carrier disc 3 has a cylindrical configuration.

[0063] In some embodiments, the carrier wafer 3 and the first through hole 201 are in a truncated cone configuration (refer to the corresponding description of the first embodiment above), thereby facilitating the carrier wafer 3 to extend into the first through hole 20 .

[0064] In some embodiments, the diameter of the first via hole 201 is greater than or equal to 3.2 mm, and the diameter of the second via hole 202 is less than 2.8 mm.

[0065] In some embodiments, the thickness of the carrier wafer 3 is greater than the depth of the first via hole 201, which facilitates removing the carrier wafer 3 from the first via hole 201. The thickness of the carrier wafer 3, the depth of the first via hole 201, and the depth of the second via hole 202 can be adjusted according to actual needs and are not limited here.

[0066] The other structures of the thin film growth sample holder provided in the second embodiment of the present application are the same as the corresponding structures of the thin film growth sample holder provided in the above-mentioned first embodiment, and are not described in detail here.

[0067] Example 3

[0068] See also Figure 11, the thin film growth sample holder provided in the third embodiment of the present application will now be described. The difference between the thin film growth sample holder provided in the third embodiment of the present application and the thin film growth sample holder provided in the first embodiment above is that the first through hole 20 may include a plurality of coaxially connected vias, and a step surface is formed between two adjacent vias, so that it can be adapted to different sizes of carrier discs 3, such as a 3mm carrier disc 3, or a 4mm carrier disc 3, or a 2mm carrier disc 3, etc., so as to meet the needs of different detection tests. Similarly, the second through hole 10 may include a plurality of coaxially connected vias, and a step surface is formed between two adjacent vias, so that it can be adapted to different sizes of substrates, so as to meet the needs of different detection tests. Among them, the number of vias included in the first through hole 20 and the number and size of the vias included in the second through hole 10 can be adjusted according to actual needs, and are not limited to them here.

[0069] In some embodiments, the larger diameter via hole in the first through hole 20 and the carrier wafer 3 are both in a truncated cone configuration (refer to the corresponding description of the first embodiment above), which facilitates the carrier wafer 3 to extend into the first through hole 20 .

[0070] The other structures of the thin film growth sample holder provided in the third embodiment of the present application are the same as the corresponding structures of the thin film growth sample holder provided in the first embodiment above, and will not be described in detail here.

[0071] The above description is merely an optional embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. Thin film growth sample holder, characterized in that: include: tray; A pressing sheet is mounted on the tray, and a first through hole is formed on the pressing sheet; A carrier disc is disposed in the first through hole and is used to support the growth of the film. A plurality of grooves are formed on the outer circumference of the carrier disc. The diameter of the first through hole away from the end of the tray is less than 2.8 mm, the diameter of the first through hole close to the end of the tray is greater than or equal to 3.2 mm, and the diameter of the slide is in the range of 2.8 mm to 3.2 mm. The diameter of the first through hole gradually increases from the pressing sheet toward the tray; the inner circumference of the first through hole is a first inclined surface, and the outer circumference of the carrier disc is a second inclined surface that matches the first inclined surface; Alternatively, the first through hole includes a first via hole and a second via hole coaxially arranged with the first via hole, the first via hole is connected to the second via hole, the diameter of the first via hole is larger than the diameter of the second via hole, and a first step surface for supporting the object carrier wafer is formed between the first via hole and the second via hole; The tray is provided with a second through hole, and the pressing sheet is provided with a corresponding third through hole. The third through hole is spaced apart from the first through hole, and the second through hole supports a normal-sized centimeter-level substrate. In this way, during the growth process, the growth of the thin film can be observed by the image of the high-energy electron beam reflected by the substrate onto the fluorescent screen. The third through hole is provided corresponding to the second through hole, which facilitates the observation of the thin film on the substrate. The second through hole includes a third via hole and a fourth via hole coaxially arranged with the third via hole. The third via hole is connected to the fourth via hole. The diameter of the third via hole is larger than that of the fourth via hole. A second step surface is formed between the third via hole and the fourth via hole.

2. The thin film growth sample holder according to claim 1, wherein: A cross-sectional area of the second through hole is greater than a cross-sectional area of the third through hole.

3. The thin film growth sample holder according to claim 1, wherein: A plurality of first mounting holes are provided on the tray, and a second mounting hole is provided on the pressing plate at a position corresponding to each of the first mounting holes; the second through holes are spaced apart from each of the first mounting holes, the first through holes are spaced apart from each of the second mounting holes, and the third through holes are spaced apart from each of the second mounting holes.

4. The thin film growth sample holder according to any one of claims 1 to 3, wherein: The diameter of the slide is 3 mm.

5. The thin film growth sample holder according to any one of claims 1 to 3, characterized in that: The cross-sectional area of the tray is larger than the cross-sectional area of the pressing tablet.

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