Laser processing device and semiconductor device manufacturing method

Abstract

A laser processing device (1) according to an embodiment includes a laser irradiation unit (20) and a conveying stage (40) capable of floating and conveying a substrate (31). The conveying stage (40) includes: a laser irradiation area (50) in which the laser (21) irradiated from the laser irradiation unit (20) irradiates the substrate (31); and a substrate conveying area (60) separated from the laser irradiation area (50); wherein a surface of the laser irradiation area (50) facing the substrate (31) is composed of a first component from which a first gas can be ejected to float the substrate (31); and a surface of the substrate conveying area (60) facing the substrate (31) is composed of a plurality of second components from which a second gas can be ejected to float the substrate (31); and the plurality of second components in the substrate conveying area (60) are arranged separately from each other.

Description

Technical Field

[0001] The present invention relates to a laser processing apparatus and a method for manufacturing a semiconductor device, for example, to a method for manufacturing a semiconductor device by laser irradiation and a laser processing apparatus. Background Art

[0002] In the manufacturing process of high-definition panels such as smartphones and televisions, it is known to perform heat treatment by laser irradiation to form TFTs (thin film transistors) that control pixels of the panel. Patent documents 1 and 2 disclose laser processing devices that irradiate a workpiece including an amorphous film formed on a glass substrate with laser light to perform annealing treatment. In the laser processing devices disclosed in Patent documents 1 and 2, the annealing treatment is performed on a floating table where the workpiece is floated by jetted air.

[0003] List of prior art documents

[0004] Patent Literature

[0005] Patent Document 1: International patent application with publication number WO 2015 / 174347

[0006] Patent Document 2: Japanese Unexamined Patent Application Publication No. 2016-162856 Summary of the invention

[0007] Technical Problems Solved by the Invention

[0008] The laser processing apparatus has room for improvement in terms of improving the laser processing performance. For example, due to a malfunction occurring when a substrate to be laser processed is transported, the laser processing performance is deteriorated.

[0009] Other problems and novel features will become readily understood from the description of this specification and the accompanying drawings.

[0010] Technical means of solving problems

[0011] A laser processing device according to an embodiment includes a laser irradiation unit and a conveying stage capable of floating and conveying a substrate. The conveying stage includes: a laser irradiation area in which laser irradiated from the laser irradiation unit is irradiated onto a substrate; and a substrate conveying area separated from the laser irradiation area, a surface of the laser irradiation area facing the substrate is composed of a first component capable of ejecting a first gas to float the substrate, a surface of the substrate conveying area facing the substrate is composed of a plurality of second components capable of ejecting a second gas to float the substrate, and the plurality of second components in the substrate conveying area are arranged separately from each other.

[0012] Beneficial effects of the present invention

[0013] According to the above-described embodiments, a laser processing apparatus and a semiconductor device manufacturing method capable of improving laser processing performance can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 FIG. 1 is an exemplary cross-sectional view of the laser processing apparatus according to the first embodiment.

[0015] Figure 2 FIG. 1 is an exemplary plan view of a conveying stage of the laser processing apparatus according to the first embodiment.

[0016] Figure 3 1 is an exemplary cross-sectional view of a member for forming a laser irradiation region of the laser processing device according to the first embodiment.

[0017] Figure 4 is an exemplary plan view of components forming a laser irradiation region of the laser processing device according to the first embodiment;

[0018] Figure 5 This is an exemplary cross-sectional view of components forming a substrate transfer region of the laser processing apparatus according to the first embodiment.

[0019] Figure 6 This is an exemplary cross-sectional view of a problem that may occur in the laser processing apparatus according to the first embodiment.

[0020] Figure 7 This is an exemplary plan view of a problem that may occur in the laser processing apparatus according to the first embodiment.

[0021] Figure 8 This is an exemplary cross-sectional view of a conveying stage of the laser processing apparatus according to the second embodiment.

[0022] Fig. 9 This is an exemplary plan view of a conveyance stage of the laser processing apparatus according to the second embodiment.

[0023] Fig.10 This is an exemplary cross-sectional view of a problem occurring in the laser processing apparatus according to the second embodiment.

[0024] Fig.11 FIG. 1 is a schematic cross-sectional view of a laser processing apparatus according to a third embodiment.

[0025] Fig.12 This is an exemplary plan view of a conveyance stage of the laser processing apparatus according to the third embodiment.

[0026] Fig.13 This is an exemplary cross-sectional view of a member forming a laser irradiation region of a laser processing apparatus according to a third embodiment.

[0027] Fig.14 is an exemplary plan view of a member forming a laser irradiation region of a laser processing device according to a third embodiment;

[0028] Fig.15 Schematic cross-sectional view of a laser processing apparatus and a workpiece according to a third embodiment.

[0029] Fig.16 FIG. 4 is a schematic cross-sectional view of a laser processing apparatus according to a fourth embodiment.

[0030] Fig.17 This is an exemplary plan view of a conveyance stage of a laser processing apparatus according to a fourth embodiment.

[0031] Fig.18 This is an exemplary cross-sectional view of a member forming a laser irradiation region of a laser processing apparatus according to a fourth embodiment.

[0032] Fig.19 This is an exemplary plan view of components forming a laser irradiation region of a laser processing apparatus according to a fourth embodiment.

[0033] Fig. 20 FIG. 4 is an exemplary flow chart of a laser processing method according to the fifth embodiment.

[0034] Fig.21 Schematic cross-sectional views illustrating a method for manufacturing a semiconductor device.

[0035] Fig. 22 is a cross-sectional view for explaining the outline of an organic electroluminescent display, and shows a simplified pixel circuit of the organic electroluminescent display.

[0036] Fig.23 This is an exemplary cross-sectional view illustrating a state where a workpiece is placed on a conveyance table of a laser processing apparatus according to a comparative example. DETAILED DESCRIPTION

[0037] For the sake of clarity of explanation, the following description and drawings are appropriately simplified and omitted. In addition, in all drawings, the same elements are represented by the same reference numerals, and the description is not repeated when necessary.

[0038] First, the problem of the laser processing device will be described using the laser processing device according to the comparative example. Then, the laser processing device of the present embodiment will be described by comparing with the comparative example. Therefore, the laser processing device of the embodiment is made clearer.

[0039] (Comparative Example)

[0040] First, a comparative example laser processing apparatus will be described. Fig.23 1 is a cross-sectional view illustrating a state where a workpiece 30 is placed on a conveying table 40 of a laser processing apparatus 101 of a comparative example. Fig.23As shown, when the workpiece 30 is transported in a state of floating on the transport stage 40, the jet air is held between the central portion of the workpiece 30 and the transport stage 40, and the workpiece 30 may be dome-shaped. Then, as the central portion of the workpiece 30 floats excessively and bends, the edge portion 39 and the corner portion of the workpiece 30 hang down. Then, the edge portion 39 and the corner portion of the workpiece 30 come into contact with the transport stage 40 and are damaged. As a result, due to the influence of dust or the like generated from the damaged portion, uneven laser irradiation occurs, and the performance of the laser processing deteriorates.

[0041] (First Embodiment)

[0042] Hereinafter, a first embodiment of the laser processing apparatus will be described. In the first embodiment, for example, the workpiece 30 is prevented from being deformed into a dome shape. Figure 1 FIG. 1 is an exemplary cross-sectional view of the laser processing apparatus according to the first embodiment. Figure 2 FIG. 1 is an exemplary plan view of a conveying stage of the laser processing apparatus according to the first embodiment. Figure 2 In the figure, a part of the transport platform is not shown.

[0043] like Figure 1 and Figure 2 As shown, the laser processing device 1 includes a conveying stage 40 and a laser irradiation unit 20. The laser processing device 1 may further include a light source (not shown), and the laser irradiation unit 20 may include a light source. The laser processing device 1 is a device that irradiates a laser 21 to a workpiece 30 to perform laser processing.

[0044] The conveyance table 40 is a stand capable of floating and conveying the workpiece 30. The conveyance table 40 allows the workpiece 30 to float and convey above the upper surface 40f of the conveyance table 40. The upper surface 40f of the conveyance table 40 is also referred to as a table top.

[0045] Here, in order to facilitate the description of the laser processing device 1, an XYZ orthogonal coordinate axis system is introduced. The plane parallel to the table is the XY plane. The direction perpendicular to the table is defined as the Z axis direction. For example, the XY plane is a horizontal plane. The Z axis direction is the vertical direction, and the +Z axis direction indicates the upward side.

[0046] The workpiece 30 is transported in the transport direction 16 while floating above the upper surface 40f of the transport table 40. For example, the workpiece 30 whose end is clamped by the clamping mechanism 15 is transported in the transport direction 16. The transport direction 16 is, for example, the +X axis direction. The clamping mechanism 15 can clamp not only the end of the workpiece 30 but also the center of the workpiece 30.

[0047] The workpiece 30 includes, for example, a substrate 31 and a semiconductor film 32 formed above the substrate 31. The substrate 31 floats from the table and is transported while keeping the main surface of the substrate 31 parallel to the table. The substrate 31 is, for example, a glass substrate, or a semiconductor substrate such as a silicon substrate. The semiconductor film 32 is, for example, amorphous silicon. The purpose of the laser treatment is to perform polycrystallization, single crystallization, modification, impurity inactivation, and impurity stabilization of the semiconductor film 32 in the workpiece 30. For example, by irradiating with the laser 21, at least a portion of the amorphous semiconductor film 32 is transformed into polycrystalline. The laser treatment is not limited to the treatment for these purposes. The laser treatment may include any treatment for irradiating the workpiece 30 with the laser 21 for heat treatment. In addition, the workpiece 30 is not limited to a workpiece including a substrate 31 and a semiconductor film 32 formed on the substrate 31, as long as it is laser treated.

[0048] The laser irradiation unit 20 irradiates laser light 21. The laser irradiation unit 20 irradiates the workpiece 30 with, for example, excimer laser light. The laser light 21 irradiated by the laser irradiation unit 20 is not limited to the excimer laser light, and may be the laser light 21 according to a desired laser process.

[0049] The area above the upper surface of the conveying stage 40 for irradiating the laser 21 to the substrate 31 is called the laser irradiation area 50, and the area above the upper surface of the conveying stage 40 for conveying the substrate 31 is called the substrate conveying area 60. The conveying stage 40 includes a plurality of parts 50a forming the laser irradiation area 50 on the upper surface of the conveying stage 40 and a plurality of parts 60a forming the substrate conveying area 60 on the upper surface of the conveying stage 40.

[0050] In addition to the components 50a and 60a, the conveying platform 40 includes a stone panel 11, a metal panel 12, a bracket 13, a height adjustment mechanism 14, and a clamping mechanism 15. The bracket 13 is arranged on the floor surface. The stone panel 11 and the metal panel 12 are arranged above the bracket 13. The stone panel 11 and the metal panel 12 can be arranged on different brackets 13. In order to make the drawings easier to see, some symbols are not shown in the drawings. In the drawings, there are parts that are not shown in hatching. The stone platform 11 and the metal platform 12 support the conveying platform 40.

[0051] The stone panel 11 is formed with a stone such as granite as a main component. The stone panel 11 is a panel that can process the flatness of the upper surface with high precision, is hardly bent during laser processing, and can maintain flatness. However, there is almost no large stone that can produce a stone panel 11 that can support all the parts 50a and the parts 60a. Therefore, the stone panel 11 supports the parts 50a that require flatness, such as the laser irradiation area 50. The material of the stone panel 11 is not limited to granite, and may include a stone other than granite as a main component as long as the flatness can be processed with higher precision than the metal panel 12.

[0052] The metal panel 12 is formed of, for example, an aluminum material as a main component. The material of the metal panel 12 is not limited to aluminum, and may be, for example, a metal such as stainless steel. The metal panel 12 may also be made large to support all of the components 50a and 60a. However, the metal panel 12 may have a non-negligible deflection and have a lower flatness than the stone panel 11. Therefore, like the laser irradiation area 50, the component 50a requiring a higher flatness than the metal panel 12 is supported by the stone panel 11, and the other components 60a used in combination are supported by the metal panel 12.

[0053] The height adjustment mechanism 14 is disposed between the bracket 13 and the stone panel 11 and the metal panel 12. Therefore, the stone panel 11 and the metal panel 12 are disposed via the height adjustment mechanism 14. Although not shown, the height adjustment mechanism 14 may be disposed between the bracket 13 and the floor surface. The height adjustment mechanism 14 is configured to adjust the height in the Z-axis direction by, for example, a pad or a wedge mechanism. The component 50a and the component 60a are disposed on the stone panel 11 and the metal panel 12, respectively. By adjusting the height adjustment mechanism 14, the stone panel 11, the metal table panel 12, and the upper surface 40f of the conveying table 40 can be adjusted. The height adjustment mechanism 14 may be disposed above the component 50a itself and the component 60a itself.

[0054] As described above, the conveying stage 40 includes the plurality of components 50a and the plurality of components 60a. The plurality of components 60a are disposed on the metal panel 12. Therefore, the plurality of components 60a are supported by the metal panel 12. Figure 1 In the figure, the plurality of parts 60a formed on the metal panel 12 are integrally shown as one part, but actually the plurality of parts 60a are provided on the metal panel 12. Hereinafter, the plurality of parts 60a may be collectively shown as one part.

[0055] The plurality of components 50a are disposed on the stone panel 11. The plurality of components 50a are supported by the stone panel 11.

[0056] When the upper surface 40f is viewed from above, that is, when viewed along the Z-axis direction, the conveying stage 40 includes the laser irradiation area 50 and the substrate conveying area 60, but a portion of the substrate conveying area 60 is not formed in the laser irradiation area 50. Figure 2 Since a plurality of parts 50a are provided on the stone panel 11, the laser irradiation area 50 may also be referred to as an area above the stone panel 11. The laser irradiation area 50 is an area where the laser 21 irradiated from the laser irradiation unit 20 is irradiated to the workpiece 30. In other words, more essentially, the laser irradiation area 50 is an area where the workpiece 30 floats with high precision to be irradiated with the laser 21.

[0057] A plurality of components 50a are arranged to be separated from each other in the X-axis direction. The separated gaps extend in the Y-axis direction. The laser 21 is irradiated so as to be directed toward the separated gaps. When viewed from the Z-axis direction, the focus 22 of the laser 21 has a linear shape extending in the Y-axis direction. The focus 22 of the laser 21 is located on the gaps separating the plurality of components 50a. A groove extending in the Y-axis direction may be formed in a single component 50a, and the groove may have the same function as the gap. In other words, the focus 22 of the laser 21 may be located on the groove.

[0058] Figure 3 1 is an exemplary cross-sectional view of a member 50 a for forming a laser irradiation region 50 of the laser processing device 1 according to the first embodiment. Figure 4 FIG. 1 is an exemplary plan view of a member 50a forming a laser irradiation region 50 of the laser processing device 1 according to the first embodiment. Figure 3 and Figure 4 As shown, the component 50a can spray a predetermined gas 17 to float the workpiece 30. The predetermined gas 17 is, for example, nitrogen, air, or an inert gas. The component 50a includes a porous body 58 and a base 59. The porous body 58 is disposed above the base 59. The component 50a includes a porous body 58 made of, for example, carbon (C), ceramic, or chromium (Cr). The base 59 is made of, for example, metal.

[0059] The exhaust pipe 70 is connected to the component 50a. The exhaust pipe 70 passes through the base 59 and is connected to the porous body 58. The predetermined gas 17 is supplied to the porous body 58 through the exhaust pipe 70. In the component 50a, the predetermined gas 17 can be ejected from the porous body. The predetermined gas 17 is exhausted to be exhausted from the microscopic holes in the porous body. The predetermined gas 17 is ejected from the component 50a to the workpiece 30 through the porous body 58. This can allow the workpiece 30 to float on the upper surface 50f of the component 50a. The surface of the laser irradiation area 50 facing the workpiece 30 includes the upper surface 50f of the component 50a.

[0060] The flow rate or pressure of the predetermined gas 17 passing through the exhaust pipe 70 may be controlled. For example, a flow meter 91, a pressure gauge 92, and a throttle valve 93 are connected to the exhaust pipe 70. Then, the flow rate or pressure of the predetermined gas 17 in the exhaust pipe 70 may be adjusted by the throttle valve 93.

[0061] In addition, the intake pipe 80 is connected to the component 50a. Unlike the exhaust pipe 70, the intake pipe 80 penetrates the porous body 58 and the base 59 of the component 50a. The predetermined gas 17 ejected between the upper surface 50f of the component 50a and the workpiece 30 can be sucked through the intake pipe 80.

[0062] The flow rate or pressure of the predetermined gas 17 passing through the intake pipe 80 may be controlled. For example, a flow meter 91, a pressure gauge 92, and a throttle valve 93 are connected to the intake pipe 80. Then, the flow rate or pressure of the predetermined gas 17 in the intake pipe 80 may be adjusted by the throttle valve 93. The flow rate or pressure of the predetermined gas 17 in the intake pipe 80 may be adjusted by a vacuum regulator 94.

[0063] The component 50a is a component that performs exhaust and intake. In the laser irradiation area 50, the floating height of the workpiece 30 from the upper surface 50f of the component 50a is set to, for example, 10 to 30 μm. In the laser irradiation area 50, the component 50a can improve the control accuracy of the floating height by adjusting the exhaust and intake using the throttle valve 93.

[0064] In the laser irradiation area 50, the laser 21 emitted from the laser irradiation unit 20 is irradiated to the workpiece 30. At this time, it is necessary to place the portion to be processed of the workpiece 30 within the range of the depth of focus (DOF) of the laser 21. The focal depth is, for example, within the range of 30 μm along the optical axis with the focus of the laser 21 as the center. The portion to be processed of the workpiece 30 is, for example, a semiconductor film 32 formed on the substrate 31.

[0065] In the laser irradiation area 50, when the workpiece 30 is irradiated with the laser 21, the workpiece 30 needs to be restrained so that the workpiece 30 is not deformed or displaced due to the influence of heat. Therefore, the floating accuracy or floating rigidity of the workpiece 30 in the laser irradiation area 50 is important. Therefore, the laser irradiation area 50 is in a non-contact adsorption state in which the predetermined gas 17 is ejected toward the workpiece 30 and the predetermined gas 17 ejected between the workpiece 30 and the component 50a is sucked out.

[0066] In the laser irradiation area 50, since it is necessary to control so that the workpiece 30 is accurately placed within the focal depth range of the laser 21, the component 50a is set on the stone panel 11. The stone panel 11 can process the upper surface with high flatness accuracy and has little bending. Therefore, the flatness of the upper surface 50f of the component 50a arranged on the stone panel 11 can be improved.

[0067] The substrate conveying region 60 is a region where a plurality of components 60a are arranged when viewed from the Z-axis direction. In addition, since the plurality of components 60a are provided on the metal panel 12, the substrate conveying region 60 can be referred to as a region above the metal panel 12. The substrate conveying region 60 is a region separated from the laser irradiation region 50. For example, the laser irradiation region 50 and the substrate conveying region 60 are arranged along the X-axis direction on the upper surface 40f of the conveying stage 40. The laser irradiation region 50 is sandwiched between the substrate conveying region 60 from both sides in the X-axis direction.

[0068] When viewed from the Z-axis direction, a plurality of components 60a are arranged on the metal panel 12 in a matrix, for example. The plurality of components 60a are arranged separately from each other. Each component 60a has lengths of, for example, 1000 mm and 200 mm in the X-axis direction and the Y-axis direction. The lengths of the component 60a in the X-axis direction and the Y-axis direction are not limited to this, and may be, for example, 200 mm and 1000 mm, or other dimensions.

[0069] The width of the gap between the components 60a adjacent to each other in the X-axis direction and the Y-axis direction is, for example, 10 mm. The width of the gap can be changed according to the length of each side of the component 60a. However, for example, the gap in the Y-axis direction is 2 to 60 mm. Define the length of the component 60a in the Y-axis direction as L, the minimum width of the gap in the Y-axis direction as Lmin, and the maximum width of the gap in the Y-axis direction as Lmax. Then, expressions (1) and (2) are established as follows.

[0070] Lmin = n1 × L (1)

[0071] Lmax = n2 × L (2)

[0072] Here, the relationship between n1 and n2 is, for example, 0 < n1 and n2 < 1. n1 is, for example, 0.01, and n2 is, for example, 0.3. Expressions (1) and (2) can also be established for the relationship between the length of the component 60a in the X-axis direction and the width of the gap.

[0073] Figure 5 Exemplary cross-sectional view of the component 60a forming the substrate transport area 60 of the laser processing apparatus 1 of the first embodiment. As Figure 5 shown, each component 60a in the transport stage 40 can eject a predetermined gas 17 to float the workpiece 30. Each component 60a includes a plurality of through holes 90, and the predetermined gas 17 can be ejected through the plurality of through holes 90. The surface of the substrate transport area 60 facing the workpiece 30 includes the upper surfaces 60f of a plurality of components 60a. Although only a few through holes 90 are shown in the figure for clarity, each component 60a can include a large number of through holes 90. The predetermined gas 17 is, for example, nitrogen, air, or an inert gas. The component 60a is made of a metal mainly composed of aluminum (Al), for example.

[0074] The flow rate or pressure of the predetermined gas 17 passing through the through holes 90 can be controlled. For example, although not shown, a flow meter, a pressure gauge, and a throttle valve are connected to the through holes. The flow rate or pressure of the predetermined gas 17 in the through holes 90 can be adjusted by the throttle valve.

[0075] Each component 60a is a component that performs only exhaust. In the substrate conveying area 60, the floating height is controlled by adjusting the exhaust of the component 60a using a throttle valve. Therefore, the control accuracy of the floating height of the workpiece 30 in the substrate conveying area 60 may be lower than the control accuracy of the floating height of the workpiece 30 in the laser irradiation area 50. For example, when the floating height of the workpiece 30 in the laser irradiation area 50 is set to 10 to 30 μm, the control accuracy is 20±10 μm. When the floating height of the workpiece 30 on the upper surface 60f of each component 60a is set to, for example, 300 to 500 μm, the control accuracy is 400±100 μm.

[0076] In the substrate conveying area 60, the components 60a are arranged side by side at a certain interval. Therefore, the predetermined gas 17 ejected toward the workpiece 30 and exhausted between the workpiece 30 and the components 60a escapes from the gap to the bottom of the components 60a. Thus, the stagnation of air can be eliminated, and the workpiece 30 can be prevented from being deformed into a dome shape. As a result, an appropriate floating height of the corner portion and the edge portion 39 of the workpiece 30 can be obtained.

[0077] In the substrate conveying area 60, the control accuracy of the floating height is lower than that in the laser irradiation area 50, and the required size is larger corresponding to the large workpiece 30, so the inexpensive metal panel 12 is used. The reason why the control accuracy of the substrate conveying area 60 is low is that there is a background, that is, the workpiece 30 and the component 60a do not need to contact.

[0078] In the laser processing apparatus 1 according to the first embodiment, it is possible to prevent the shape of the workpiece 30 from being deformed into the dome shape.

[0079] (Second Embodiment)

[0080] Hereinafter, a second embodiment will be described. First, a problem different from that of the laser processing apparatus 1 according to the first embodiment will be described. Hereinafter, a second embodiment laser processing apparatus 2 will be described.

[0081] Figure 6 This is an exemplary cross-sectional view of a problem that occurs in the laser processing device 1 according to the first embodiment. Figure 7 FIG. 1 is an exemplary plan view showing a problem that may occur in the laser processing device 1 according to the first embodiment. Figure 6 and Figure 7 As shown, the conveying table 40 is arranged on the stone panel 11 and the metal panel 12. From the viewpoint of flatness, the conveying table 40 is preferably arranged entirely on the stone panel 11. The stone panel 11 is easy to obtain the accuracy of the flatness of the upper surface during the processing. Therefore, the workpiece 30 can be accurately processed on the conveying table 40 arranged above the stone panel 11.

[0082] However, there is almost no large stone material from which a stone panel 11 capable of supporting the entire conveying platform 40 can be produced. Therefore, such material is also expensive (if any), and is also expensive to handle and transport, which is disadvantageous in terms of cost. Therefore, the stone panel 11 is only used for the laser irradiation area 50 that requires high-precision flatness for laser 21 irradiation.

[0083] On the other hand, the substrate conveying area 60 does not require the same flatness accuracy as the laser irradiation area 50. In addition, since a work surface corresponding to the large workpiece 30 is required, an inexpensive metal panel 12 is used. However, compared with the stone panel 11, non-negligible deflection may occur in the metal panel 12. Then, a step D may appear between the upper surface 50f of the component 50a and the upper surfaces 60f of the plurality of components 60a. The step D makes the upper surface 50f of the component 50a lower than the upper surface 60f of the component 60a. The step D may also make the upper surface 60f lower than the upper surface 50f.

[0084] like Figure 7 As shown, since the metal panel 12 is easy to bend, the end of the metal panel 12 close to the stone panel 11 is bent at the micron level, and, in a top view, the step D is distributed at the micron level between the metal panel 12 and the stone panel 11. For example, the step D appears in the Z-axis direction between the +Y-axis direction side 121 and the central part 122 between the metal panel 12 and the stone panel 11, or in the Z-axis direction between the central part 122 and the -Y-axis direction side 123. Then, the step D between the metal panel 12 and the stone panel 11 is also reflected between the component 60a and the component 50a. As a result, the step D also appears between the upper surface 60f of the component 60a and the upper surface 50f of the component 50a. Relative to the floating height (10 to 30 μm) in the laser irradiation area 50, the step D reflected between the component 60a and the component 50a is a non-negligible step D even at the micron level.

[0085] Examples of the cause of the step D occurring include, in addition to the deflection of the metal panel 12, a tolerance of the upper surface of the metal panel 12, a tolerance of the thickness of the member 60a, and an error of the height adjustment mechanism.

[0086] like Figure 6As shown, when a step D appears between the laser irradiation area 50 and the substrate conveying area 60, the workpiece 30 contacts the end of the component 60a when the workpiece 30 moves from the substrate conveying area 60 to the laser irradiation area 50. Since the floating height in the laser irradiation area 50 is as low as 10 to 30 μm, contact may occur even if the step D is about 10 μm. Then, the contact between the workpiece 30 and the component 60a causes problems such as damage to the workpiece 30 and generation of dust. For example, the generation of dust causes uneven irradiation of the laser 21 and reduces the performance of the laser irradiation device.

[0087] Next, a laser processing apparatus 2 according to a second embodiment will be described. The laser processing apparatus 2 of the second embodiment is different from the laser processing apparatus 1 of the first embodiment in that a substrate conveying region 60 and a moving region 61 are provided above a metal panel 12 .

[0088] Figure 8 1 is a schematic cross-sectional view of a conveying stage 40 of a laser processing apparatus 2 according to the second embodiment. Fig. 9 FIG. 4 is an exemplary plan view of the conveying table 40 of the laser processing device 2 according to the second embodiment. Figure 8 and Fig. 9 As shown, the laser processing device 2 of the second embodiment is configured such that, in addition to the plurality of components 60a, a plurality of components 61a forming the moving area 61 are arranged on the metal panel 12. Figure 8 Components such as the metal panel 12, the component 60a, and the component 61a disposed on the +X axis direction side of the stone panel 11 are not shown. Fig. 9 In the embodiment, some of these components are not shown. In fact, the metal panel 12, the plurality of components 60a and the plurality of components 61a are also arranged on the +X axis direction side of the stone panel 11.

[0089] The plurality of components 61a are arranged above the metal panel 12, closer to the laser irradiation area 50. Therefore, the plurality of components 61a are disposed between the plurality of components 60a and the plurality of components 50a. Each component 61a may have a similar shape to the component 60a. Figure 8 In the figure, the plurality of parts 61a formed on the metal panel 12 are integrally shown as one part, but actually the plurality of parts 61a are provided on the metal panel 12. Hereinafter, the plurality of parts 61a may be integrally shown as one part.

[0090] The moving area 61 is an area where the component 61a is arranged when viewed from above, that is, when viewed from the Z-axis direction. Therefore, the substrate conveying area 60 and the moving area 61 are arranged above the metal panel 12. As described above, the conveying stage 40 also includes the moving area 61 arranged between the laser irradiation area 50 and the substrate conveying area 60. The moving area 61 is arranged between the substrate conveying area 60 and the laser irradiation area 50. In addition, the laser irradiation area 50 is sandwiched between the moving areas 61.

[0091] A gap is provided between adjacent components 61a and between adjacent components 61a and component 60a. The width of the gap may be similar to the width of the gap between adjacent components 60a. Therefore, the relationship between the length of component 61a in the X-axis direction and the Y-axis direction and the gap satisfies expressions (1) and (2).

[0092] Each component 61a is a component that performs exhaust in the same manner as component 60a. In other words, each component 61a can eject a predetermined gas 17 to float the workpiece 30. Each component 61a includes a plurality of through holes (not shown) through which the predetermined gas 17 can be ejected. The functions of the through holes, flowmeter, pressure gauge and throttle valve in each component 61a are the same as those in component 60a, and the flow rate or pressure of the predetermined gas 17 can be adjusted. Component 61a can also perform air intake. For example, component 61a has the same structure as component 50a, and can be provided with an exhaust pipe and an intake pipe. The flow rate or pressure of the predetermined gas 17 passing through the exhaust pipe and the intake pipe can be controllable.

[0093] The surface of the moving area 61 facing the workpiece 30 includes the upper surfaces 61f of the plurality of parts 61a. The control accuracy of the floating height of the workpiece 30 in the moving area 61 is higher than the control accuracy of the floating height of the workpiece 30 in the substrate conveying area 60. For example, the floating height of the workpiece 30 in the moving area 61 is set to 50 to 150 μm. For example, by controlling the amount of the predetermined gas 17 ejected from the part 61a, the floating height can be set to 50 to 150 μm. Therefore, the control accuracy of the floating height is 100±50 μm. On the other hand, the floating height of the workpiece 30 in the substrate conveying area 60 is set to 300 to 500 μm, and the control accuracy of the floating height is 400±100 μm. The other structures of the laser processing device 2 of the second embodiment are the same as those of the first embodiment.

[0094] In the present embodiment, the floating height of the workpiece 30 in the substrate conveying region 60 is set to 300 to 500 μm. The floating height of the workpiece 30 in the moving region 61 is set to 50 to 150 μm. The floating height of the workpiece 30 in the laser irradiation region 50 is set to 10 to 30 μm. Therefore, the moving region 61 is provided to prevent a sudden change in the floating height of the workpiece 30 when the workpiece 30 moves from the substrate conveying region 60 to the laser irradiation region 50.

[0095] (Third Embodiment)

[0096] Next, the third embodiment will be described. Hereinafter, the problem of the laser processing apparatus 2 of the second embodiment will be described. Then, the laser processing apparatus 3 of the third embodiment will be described.

[0097] Fig.10 FIG. 2 is an exemplary cross-sectional view showing a problem of the laser processing device 2 according to the second embodiment. Fig.10 As shown, the floating height of the workpiece 30 in the moving area 61 is about 50 to 150 μm, while the floating height of the workpiece 30 in the laser irradiation area 50 is as low as about 10 to 30 μm. Therefore, even if the step D between the moving area 61 and the laser irradiation area 50 is about 10 μm, contact may be caused. Therefore, as in the first embodiment, the contact between the workpiece 30 and the transport stage 40 causes problems such as damage to the workpiece 30 and generation of dust, which reduces the performance of the laser irradiation device.

[0098] The laser processing device 3 according to the third embodiment will be described below. The laser processing device 3 according to the third embodiment is different from the laser processing devices according to the first and second embodiments in that a low floating height area 51 and a medium floating height area 52 are provided on the stone panel 11. Fig.11 4 is a schematic cross-sectional view of a laser processing device 3 according to the third embodiment. Fig.12 FIG. 4 is an exemplary plan view of a conveyance stage 40 of a laser processing apparatus 3 according to the third embodiment.

[0099] like Fig.11 and Fig.12As shown, in the laser processing device 3 according to the third embodiment, the component 50a above the stone panel 11 is divided into a low floating height area 51 and a medium floating height area 52. In other words, the low floating height area 51 and the medium floating height area 52 are areas in the component 50a. The medium floating height area 52 is arranged in the component 50a so as to be closer to the substrate conveying area 60. For example, in the case where the substrate conveying area 60 is arranged on the -X axis direction side of the component 50a, the medium floating height area 52 is an area arranged on the -X axis direction side of the component 50a. The component 50a is divided into the low floating height area 51 and the medium floating height area 52, but the component 50a is a single component.

[0100] The laser irradiation region 50 has a low floating height region 51 and a medium floating height region 52 adjacent to the low floating height region 51 when viewed from above (i.e., when viewed in the Z-axis direction (hereinafter the same)). The low floating height region 51 and the medium floating height region 52 are arranged side by side in the X-axis direction. The medium floating height region 52 is arranged between the moving region 61 and the low floating height region 51. In a top view, the low floating height region 51 overlaps with the focus of the laser 21.

[0101] The floating height of the workpiece 30 in the low floating height region 51 is set to 10 to 30 μm. The floating height of the workpiece 30 in the medium floating height region 52 is set to 50 to 150 μm. Therefore, the floating height of the substrate 31 in the medium floating height region 52 is greater than that in the low floating height region 51.

[0102] Fig.13 1 is an exemplary cross-sectional view of a member 50 a forming a laser irradiation region 50 of a laser processing device 3 according to the third embodiment. Fig.14 FIG. 5 is an exemplary plan view of a member 50a forming a laser irradiation region 50 of a laser processing device 3 according to a third embodiment. Fig.13 and Fig.14 As shown, in a plan view, the component 50a includes a low floating height region 51 and a medium floating height region 52. The low floating height region 51 and the medium floating height region 52 in the component 50a can spray a predetermined gas 17 to float the workpiece 30. The low floating height region 51 and the medium floating height region 52 in the component 50a include a porous body 58 and a pedestal 59. The porous body 58 is disposed above the pedestal 59.

[0103] The exhaust pipe 71 is connected in the low flying height region 51, and the exhaust pipe 72 is connected in the middle flying height region 52. Specifically, the exhaust pipe 71 penetrates the susceptor 59 and is connected to the porous body 58. The predetermined gas 17 is supplied to the porous body 58 through the exhaust pipe 71. In the low flying height region 51, the predetermined gas 17 can be ejected from the porous body 58. The predetermined gas 17 is exhausted so as to be exhausted from the minute holes in the porous body 58. The predetermined gas 17 is ejected from the low flying height region 51 to the workpiece 30 through the porous body 58.

[0104] In the middle floating height region 52, as in the low floating height region 51, the predetermined gas 17 is ejected from the middle floating height region 52 to the workpiece 30 through the porous body 58. In this way, the predetermined gas is supplied to the component 50a through the exhaust pipe 71 and the exhaust pipe 72. For example, the predetermined gas is supplied to the porous body of the component 50a. Then, the predetermined gas 17 is ejected from the component 50a to the workpiece 30.

[0105] The flow rate or pressure of the predetermined gas passing through the exhaust pipe 71 and the exhaust pipe 72, respectively, is independently controlled. For example, a flow meter 91, a pressure gauge 92, and a throttle valve 93 are connected to the exhaust pipe 71 and the exhaust pipe 72. The flow rate or pressure of the predetermined gas 17 in the exhaust pipe 71 and the exhaust pipe 72 can be adjusted by the throttle valve 93.

[0106] In addition, the intake pipe 81 is connected in the low flying height region 51, and the intake pipe 82 is connected in the middle flying height region 52. Specifically, unlike the exhaust pipe 71, the intake pipe 81 penetrates the porous body 58 and the pedestal 59 in the low flying height region 51. The predetermined gas 17 ejected between the upper surface 51f of the low flying height region 51 and the workpiece 30 can be sucked through the intake pipe 81.

[0107] Similar to the low flying height region 51, in the middle flying height region 52, the predetermined gas 17 ejected between the upper surface 52f of the middle flying height region 52 and the workpiece 30 can also be sucked in through the intake pipe 82. In this way, the predetermined gas 17 is sucked into the component 50a through the intake pipe 81 and the intake pipe 82.

[0108] The flow rate or pressure of the predetermined gas passing through the intake pipe 81 and the intake pipe 82, respectively, is independently controlled. For example, a flow meter 91, a pressure gauge 92, and a throttle valve 93 are connected to the intake pipe 81 and the intake pipe 82. The flow rate or pressure of the predetermined gas 17 in the intake pipe 81 and the intake pipe 82 can be adjusted by the throttle valve 93. The flow rate or pressure of the predetermined gas 17 in the intake pipe 81 and the intake pipe 82 can be adjusted by the vacuum regulator 94.

[0109] In the present embodiment, the floating height of the workpiece 30 in the substrate conveying region 60 is set to 300 to 500 μm. The floating height of the workpiece 30 in the moving region 61 is set to 50 to 150 μm. Therefore, the floating height of the substrate 31 in the substrate conveying region 60 is greater than that in the moving region 61.

[0110] The floating height of the workpiece 30 in the middle floating height region 52 of the laser irradiation region 50 is set to 50 to 150 μm. Therefore, the floating height of the substrate in the middle floating height region 52 is substantially equal to its floating height in the moving region 61. The floating height of the workpiece 30 in the low floating height region 51 of the laser irradiation region 50 is set to 10 to 30 μm. Therefore, the floating height of the substrate 31 in the moving region 61 is greater than its floating height in the low floating height region 51.

[0111] The control accuracy of the floating height of the workpiece 30 in the low floating height area 51 is higher than the control accuracy of the floating height of the workpiece 30 in the medium floating height area 52. For example, when the floating height of the workpiece 30 in the low floating height area 51 is set to 10 to 30 μm, the control accuracy is 20±10 μm. When the floating height of the workpiece 30 in the medium floating height area 52 is set to 50 to 150 μm, the control accuracy is 100±50 μm.

[0112] The control accuracy of the floating height of the workpiece 30 in the moving area 61 is higher than the control accuracy of the floating height of the workpiece 30 in the substrate conveying area 60. For example, when the floating height of the workpiece 30 in the moving area 61 is set to 50 to 150 μm, the control accuracy is 100±50 μm. When the floating height of the workpiece 30 in the substrate conveying area 60 is set to 300 to 500 μm, the control accuracy is 400±100 μm.

[0113] In addition, the control accuracy of the floating height of the workpiece 30 in the middle floating height area 52 is substantially equal to the control accuracy of the floating height of the workpiece 30 in the moving area 61. The floating height of the workpiece 30 in the middle floating height area 52 is set equal to the floating height of the workpiece 30 in the moving area 61.

[0114] Fig.15 FIG. 3 is an exemplary cross-sectional view of the laser processing device 3 and the workpiece 30 according to the third embodiment. Fig.15 As shown, the moving area 61 and the middle flying height area 52 are provided to prevent the flying height of the workpiece 30 from suddenly changing when the workpiece 30 moves from the substrate transfer area 60 to the low flying height area 51 .

[0115] The floating height of the workpiece 30 in the moving area 61 is about 50 to 150 μm, and the floating height of the workpiece 30 in the medium floating height area 52 is also 50 to 150 μm. Therefore, the floating heights at the adjacent ends of the metal panel 12 and the stone panel 11 are equal. The floating height is significantly greater than the expected step D. For example, the floating height at the end is set to be 50 to 150 μm greater than the expected step D height of 10 μm.

[0116] Therefore, even in the case where there is a slight step D between the moving area 61 above the metal panel 12 and the laser irradiation area 50 above the stone panel 11, the workpiece 30 can be prevented from contacting the parts 61a, 60a, and 50a. Therefore, damage to the workpiece 30 and generation of dust due to contact between the workpiece 30 and the conveying stage 40 can be prevented, and the performance of the laser processing device 3 can be improved. Other configurations and effects are included in the description of Comparative Examples 1 and 2.

[0117] (Fourth Embodiment)

[0118] Next, a laser processing device 4 according to a fourth embodiment will be described. The laser processing device 4 according to the fourth embodiment is different from the laser processing device 3 according to the third embodiment in that a high floating height area 53 is provided on the stone countertop 11 in addition to the low floating height area 51 and the medium floating height area 52. In addition, the component 61a is not provided on the metal panel 12. Fig.16 FIG. 4 is a schematic cross-sectional view of a laser processing device 4 according to a fourth embodiment. Fig.17 FIG. 4 is an exemplary plan view of a conveying stage 40 of a laser processing apparatus 4 according to a fourth embodiment.

[0119] like Fig.16 and Fig.17 As shown, in the laser processing device 4 according to the fourth embodiment, the component 50a above the stone panel 11 is divided into a low floating height area 51, a middle floating height area 52, and a high floating height area 53. In other words, the low floating height area 51, the middle floating height area 52, and the high floating height area 53 are areas in the component 50a. The high floating height area 53 is provided in the component 50a so as to be closer to the substrate conveying area 60. Therefore, the middle floating height area 52 is provided between the high floating height area 53 and the low floating height area 51. The component 50a is divided into the low floating height area 51, the middle floating height area 52, and the high floating height area 53, but the component 50a is a single component.

[0120] In a plan view, laser irradiation region 50 includes a low flying height region 51 , a medium flying height region 52 adjacent to low flying height region 51 , and a high flying height region 53 adjacent to medium flying height region 52 .

[0121] The low floating height region 51, the middle floating height region 52 and the high floating height region 53 are arranged side by side in the X-axis direction. The middle floating height region 52 is arranged between the low floating height region 51 and the high floating height region 53. In a plan view, the low floating height region 51 overlaps with the focal point 22 of the laser 21. In a plan view, the component 50a includes the low floating height region 51, the middle floating height region 52 and the high floating height region 53.

[0122] The floating height of the workpiece 30 in the high-flying-height region 53 is greater than that in the medium-flying-height region 52. The floating height of the workpiece 30 in the medium-flying-height region 52 is greater than that in the low-flying-height region 51.

[0123] For example, the flying height of the workpiece 30 in the low flying height region 51 is set to 10 to 30 μm. The flying height of the workpiece 30 in the medium flying height region 52 is set to 50 to 150 μm. The flying height of the workpiece 30 in the high flying height region 53 is set to 300 to 500 μm.

[0124] Fig.18 1 is an exemplary cross-sectional view of a member 50 a forming a laser irradiation region 50 of a laser processing device 4 according to the fourth embodiment. Fig.19 FIG. 4 is an exemplary plan view of a member 50a forming a laser irradiation region 50 of a laser processing device 4 according to a fourth embodiment. Fig.18 and 19 As shown, the low flotation height region 51, the middle flotation height region 52 and the high flotation height region 53 in the component 50a can spray the predetermined gas 17 to float the workpiece 30. The low flotation height region 51, the middle flotation height region 52 and the high flotation height region 53 all include a porous body 58 and a base 59. The porous body 58 is disposed above the base 59.

[0125] The exhaust pipe 73 is connected in the high flotation height region 53. As described above, the exhaust pipe 71 is connected in the low flotation height region 51, and the exhaust pipe 72 is connected in the medium flotation height region 52. Similar to the exhaust pipe 71 and the exhaust pipe 72, the exhaust pipe 73 also penetrates the susceptor 59 and is connected to the porous body 58. The predetermined gas 17 is supplied to the porous body 58 in the high flotation height region 53 through the exhaust pipe 73. In the high flotation height region 53, the predetermined gas 17 can be ejected from the porous body 58. The predetermined gas 17 is exhausted so as to be exhausted from the microscopic holes in the porous body 58. The predetermined gas 17 is ejected from the high flotation height region 53 to the workpiece 30 through the porous body 58.

[0126] In this way, the predetermined gas 17 is supplied to the component 50a through the exhaust pipe 71, the exhaust pipe 72, and the exhaust pipe 73. For example, the predetermined gas is supplied to the porous body 58 of the component 50a. Then, the predetermined gas 17 is ejected from the component 50a to the workpiece 30.

[0127] The flow rate or pressure of the predetermined gas 17 passing through the exhaust pipe 71, the exhaust pipe 72, and the exhaust pipe 73, respectively, is independently controlled. For example, a flow meter 91, a pressure gauge 92, and a throttle valve 93 are connected to each exhaust pipe. The flow rate or pressure of the predetermined gas 17 in each exhaust pipe can be adjusted by the throttle valve 93.

[0128] In addition, an air intake pipe 83 is connected in the high flotation height region 53. As described above, the air intake pipe 81 is connected in the low flotation height region 51, and the air intake pipe 82 is connected in the medium flotation height region 52. Similar to the air intake pipe 81 and the air intake pipe 82, the air intake pipe 83 penetrates the porous body 58 and the base 59 in the high flotation height region 53. The predetermined gas 17 ejected between the upper surface 53f of the high flotation height region 53 and the workpiece 30 can be sucked in through the air intake pipe 83. As described above, the predetermined gas is sucked into the component 50a through the air intake pipe 81, the air intake pipe 82, and the air intake pipe 83.

[0129] The flow rate or pressure of the predetermined gas 17 passing through the intake pipe 81, the intake pipe 82, and the intake pipe 83, respectively, can be independently controlled. For example, a flow meter 91, a pressure gauge 92, and a throttle valve 93 are connected to each intake pipe. The flow rate or pressure of the predetermined gas 17 in each intake pipe can be adjusted by the throttle valve 93. The flow rate or pressure of the predetermined gas 17 in each intake pipe can be adjusted by a vacuum regulator 94.

[0130] In the present embodiment, the floating height of the workpiece 30 in the high floating height region 53 is set to 300 to 500 μm. The floating height of the workpiece 30 in the medium floating height region 52 is set to 50 to 150 μm. The floating height of the workpiece 30 in the low floating height region 51 is set to 10 to 30 μm. Therefore, the floating height of the substrate 31 in the high floating height region 53 is greater than its floating heights in the medium floating height region 52 and the low floating height region 51.

[0131] The control accuracy of the floating height of the workpiece 30 in the low floating height area 51 is higher than the control accuracy of the floating height of the workpiece 30 in the medium floating height area 52. For example, when the floating height of the workpiece 30 in the low floating height area 51 is set to 10 to 30 μm, the control accuracy is 20±10 μm. When the floating height of the workpiece 30 in the medium floating height area 52 is set to 50 to 150 μm, the control accuracy is 100±50 μm.

[0132] In addition, the control accuracy of the floating height of the workpiece 30 in the medium floating height area 52 is higher than the control accuracy of the floating height of the workpiece 30 in the high floating height area 53. For example, the floating height of the workpiece 30 in the medium floating height area 52 is set to 50 to 150 μm, and the control accuracy is 100±50 μm. When the floating height of the workpiece 30 in the high floating height area 53 is set to 300 to 500 μm, the control accuracy is 400±100 μm.

[0133] The control accuracy of the flying height of the workpiece 30 in the high flying height area 53 is substantially equal to the control accuracy of the flying height of the workpiece 30 in the substrate transfer area 60. The flying height of the workpiece 30 in the high flying height area 53 is set equal to the flying height of the workpiece 30 in the substrate transfer area 60.

[0134] The high flying height region 53 and the middle flying height region 52 are provided to prevent a sudden change in the flying height of the workpiece 30 when the workpiece 30 moves from the substrate transfer region 60 to the low flying height region 51 in the laser irradiation region 50 .

[0135] The floating height of the workpiece 30 in the substrate conveying area 60 is about 300 to 500 μm, and the floating height of the workpiece 30 in the high floating height area 53 is also 300 to 500 μm. Therefore, the floating heights at the adjacent ends of the metal panel 12 and the stone panel 11 are equal. In addition, not only are the floating heights equal, but the floating heights are set to 300 to 500 μm, which is higher than 50 to 150 μm in the third embodiment. Therefore, the workpiece 30 can be prevented from contacting the component 60a and the component 50a. Therefore, damage to the workpiece 30 and generation of dust due to contact between the workpiece 30 and the conveying stage 40 can be prevented, and the performance of the laser processing device 4 can be improved. Other configurations and effects are included in the description of the first to third embodiments.

[0136] (Fifth Embodiment)

[0137] A fifth embodiment will be described below. The fifth embodiment relates to a laser processing method using a laser processing apparatus. Fig. 20 FIG. 5 is an exemplary flow chart of the laser processing method according to the fifth embodiment. Fig. 20 As shown in step S11, first, a laser processing device is prepared. The prepared laser processing device is preferably any one of the laser processing devices in the first embodiment to the fourth embodiment.

[0138] Specifically, for example, the laser processing apparatus preferably includes a laser irradiation unit 20 and a conveying stage 40 capable of allowing a workpiece 30 to float and conveying the workpiece 30. In a plan view, the conveying stage 40 preferably includes a laser irradiation region 50 in which the laser irradiation unit 20 irradiates the workpiece 30, and a substrate conveying region 60 separated from the laser irradiation region 50. The surface of the laser irradiation region 50 facing the workpiece 30 includes an upper surface 50f of a component 50a from which a predetermined gas 17 can be ejected to float the workpiece 30, and the surface of the substrate conveying region 60 facing the workpiece 30 includes upper surfaces 60f of a plurality of components 60a from which a predetermined gas 17 can be ejected to float the workpiece 30, and the plurality of components 60a in the substrate conveying region 60 are arranged in a manner separated from each other.

[0139] Then, if Fig. 20 As shown in step S12, the workpiece 30 is transported to the transport stage 40 of the laser processing device. Specifically, the workpiece 30 is transported from the substrate transport area 60 toward the laser irradiation area 50. The floating height of the workpiece 30 is controlled to a predetermined floating height in the substrate transport area 60 and the laser irradiation area 50. In the case of the second and third embodiments, the floating height of the workpiece 30 in the moving area 61 is also controlled to a predetermined floating height.

[0140] Then, if Fig. 20 As shown in step S13, the workpiece 30 is irradiated with the laser 21 for laser processing. For example, when the workpiece 30 includes a substrate 31 and a semiconductor film 32 formed on the substrate 31, the semiconductor film 32 is irradiated with the laser 21 for laser processing. In this case, the workpiece 30 is laser processed.

[0141] According to the laser processing method of this embodiment, since the laser processing device of any one of the first to fourth embodiments is used, it is possible to prevent the workpiece 30 from being deformed into a dome shape. Therefore, the edge portion 39 and the corner portion of the workpiece 30 can be prevented from contacting the conveying stage 40 and being damaged, and uneven irradiation of the laser 21 due to dust generated from the damaged portion can be prevented. Therefore, it is possible to prevent the performance of the laser processing from being degraded.

[0142] Using the laser processing apparatus according to the third and fourth embodiments, the floating height of the workpiece 30 can be made equal at the ends where the metal panel 12 and the stone panel 11 are adjacent to each other. Therefore, the workpiece 30 can be prevented from contacting the component 60a and the component 50a. Therefore, damage to the workpiece 30 and generation of dust due to contact between the workpiece 30 and the conveying stage 40 can be prevented, and the performance of the laser processing apparatuses 1 to 4 can be improved.

[0143] (Semiconductor device manufacturing method)

[0144] Hereinafter, as another embodiment, a method for manufacturing a semiconductor device using the above-mentioned laser processing device is described. The method for manufacturing a semiconductor device according to the present embodiment includes the steps of preparing a laser processing device, transporting a substrate 31 on which an amorphous semiconductor film 32 is formed as a workpiece 30 to a transport table 40, and irradiating the workpiece 30 with a laser to polycrystallize the amorphous semiconductor film 32. In the step of polycrystallizing the amorphous semiconductor film 32, a laser processing method using a laser processing device is performed. The semiconductor device includes, for example, a thin film transistor (TFT). The polycrystallized semiconductor film 32 constitutes at least a portion of the thin film transistor. The thin film transistor is used, for example, to control a display.

[0145] Fig.21 Schematic cross-sectional view illustrating a method for manufacturing a semiconductor device. The laser processing apparatus of the first to fourth embodiments described above is suitable for manufacturing a TFT array substrate. In the accompanying drawings, a portion of the hatched line is not shown to avoid complication. Below, a method for manufacturing a semiconductor device including a TFT is described.

[0146] First, if Fig.21 As shown in (a), a gate electrode 202 is formed on a glass substrate 201. For example, a metal film containing a metal such as aluminum can be used as the gate electrode 202. Fig.21 As shown in (b), a gate insulating film 203 is formed on the gate electrode 202. The formed gate insulating film 203 covers the gate electrode 202. After that, as shown in Fig.21 As shown in (c), an amorphous silicon film 204 is formed on the gate insulating film 203. The amorphous silicon film 204 is superimposed on the gate electrode 202 by sandwiching the gate insulating film 203 between the amorphous silicon film 204 and the gate electrode 202.

[0147] The gate insulating film 203 is, for example, a silicon nitride film (SiN x ), silicon oxide film (SiO2 film) or a stacked film of the above two. Specifically, the gate insulating film 203 and the amorphous silicon film 204 are successively deposited by chemical vapor deposition (CVD) technology. The glass substrate 201 on which the amorphous silicon film 204 is deposited is the workpiece 30 in the laser processing device 1.

[0148] Then, if Fig.21 As shown in (d), the amorphous silicon film 204 is irradiated with laser light by the laser processing apparatus to crystallize the amorphous silicon film 204 and form a polysilicon film 205. Thus, a polysilicon film 205 containing crystallized silicon is formed on the gate insulating film 203.

[0149] At this time, using the laser processing apparatus according to the above embodiment can reduce the influence of the deflection of the glass substrate 201 during laser irradiation and prevent the deviation of the focus depth (DOF) of the laser used to irradiate the amorphous silicon film 204. Therefore, a uniformly crystallized polycrystalline silicon film 205 can be formed.

[0150] Then, if Fig.21 As shown in (e), an interlayer insulating film 206, a source electrode 207a, and a drain electrode 207b are formed on the polysilicon film 205. The interlayer insulating film 206, the source electrode 207a, and the drain electrode 207b can be formed by a conventional photolithography technique or a film formation technique.

[0151] By using the semiconductor device manufacturing method described above, a semiconductor device including a TFT can be manufactured. It should be noted that the subsequent manufacturing steps vary depending on the final manufactured device, so they will not be described in detail.

[0152] <Organic Electroluminescent Display>

[0153] Hereinafter, an organic electroluminescent display will be described as an example of a device using a semiconductor device including a TFT. Fig. 22 is a cross-sectional view for explaining the outline of an organic electroluminescent display, and shows a simplified pixel circuit of the organic electroluminescent display. Fig. 22 The organic electroluminescent display 300 shown is an active matrix type display device in which a TFT is provided in each pixel Px.

[0154] The organic electroluminescent (EL) display 300 includes a substrate 310 , a TFT layer 311 , an organic layer 312 , a color filter layer 313 , and a sealing substrate 314 . Fig. 22 The top emission type organic EL display is shown, in which the sealing substrate 314 side is located on the viewing side. It should be noted that the following description is used to illustrate the exemplary structure of the organic EL display, and this embodiment is not limited to the following structure. The semiconductor device of this embodiment can also be used, for example, for a bottom emission type organic EL display.

[0155] The substrate 310 is a glass substrate or a metal substrate. The TFT layer 311 is disposed on the substrate 310. The TFT layer 311 includes TFTs 311a disposed in each pixel Px. The TFT layer 311 also includes a connection line connected to the TFTs 311a. The TFTs 311a and the lines constitute a pixel circuit. The TFT layer 311 corresponds to Fig.19 The TFT shown includes a gate electrode 202, a gate insulating film 203, a polysilicon film 205, an interlayer insulating film 206, a source electrode 207a and a drain electrode 207b.

[0156] The organic layer 312 is disposed on the TFT layer 311. The organic layer 312 includes organic EL light-emitting units 312a respectively disposed in each pixel Px. The organic EL light-emitting unit 312a, for example, has a stacked structure consisting of an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer and a cathode. In the case of a top emission type, the anode is a metal electrode, and the cathode is a transparent conductive film made of indium tin oxide (ITO) or the like. In addition, the organic layer 312 is also provided with a partition 312b for separating the organic EL light-emitting units 312a between the pixels Px.

[0157] The color filter layer 313 is disposed on the organic layer 312. The color filter layer 313 includes a color filter 313a for realizing color display. That is, each pixel Px is provided with a resin layer colored with red (R), green (G) or blue (B) as a color filter 313a. When the white light emitted by the organic layer 312 passes through the color filter 313a, the white light is converted into light having three colors of RGB. It should be noted that when an organic EL light-emitting unit capable of emitting a three-color system of each of the three colors of red, green and blue is provided in the organic layer 312, the color filter layer 313 may not be provided.

[0158] The sealing substrate 314 is provided on the color filter layer 313. The sealing substrate 314 is a transparent substrate such as a glass substrate, and is used to prevent the performance of the organic EL light emitting unit of the organic layer 312 from being degraded.

[0159] The current flowing through the organic EL light emitting unit 312a of the organic layer 312 changes according to the display signal supplied to the pixel circuit. Therefore, by supplying a display signal corresponding to the display image to each pixel Px, the light emission amount of each pixel Px can be controlled. Thus, the desired image can be displayed.

[0160] Although the organic EL display is described above as an example of a device using a semiconductor device including TFT, the semiconductor device including TFT may also be, for example, a liquid crystal display. In addition, the case where the laser processing device 1 according to the present embodiment is applied to a laser annealing device has been described. The laser processing device of the present embodiment may also be applied to other devices besides the laser annealing device.

[0161] The present invention made by the inventor of the present application has been specifically described above based on the implementation modes, but the present invention is not limited to the above-mentioned implementation modes, and needless to say, various changes can be made without departing from the spirit and scope of the present invention.

[0162] This application is based upon and claims the benefit of priority from Japanese patent application No. 2018-080321, filed on April 19, 2018, the entire contents of which are incorporated herein by reference.

[0163] Reference numerals list

[0164] 1, 2, 3, 4, 101 Laser processing device

[0165] 11 Stone Panel

[0166] 12 Metal Panel

[0167] 13 Bracket

[0168] 14 Height adjustment mechanism

[0169] 15 Clamping mechanism

[0170] 16 Shipping Direction

[0171] 17 Predetermined gas

[0172] 20 Laser irradiation unit

[0173] 21 Laser

[0174] 22 Focus

[0175] 30 Workpieces

[0176] 31 substrate

[0177] 32 Semiconductor film

[0178] 39 Edge

[0179] 40 Transport platform

[0180] 40f Upper surface

[0181] 50 Laser irradiation area

[0182] 50a Parts

[0183] 50f upper surface

[0184] 51 Low floating height area

[0185] 52 Medium floating height area

[0186] 53 High floating height area

[0187] 58 porous body

[0188] 59 Pedestal

[0189] 60 Substrate transport area

[0190] 60a Parts

[0191] 60f Upper surface

[0192] 61 Mobile Area

[0193] 61a Part

[0194] 70, 71, 72, 73 exhaust pipe

[0195] 80, 81, 82, 83 Intake pipe

[0196] 90 Through Hole

Claims

1. A laser processing device, characterized in that: include: Laser irradiation unit; and A transport table capable of allowing the substrate to float and be transported; Wherein, the transport platform comprises: a laser irradiation region in which the substrate is irradiated with laser light irradiated from the laser irradiation unit; and a substrate conveying area separated from the laser irradiation area; wherein the surface of the laser irradiation area facing the substrate is composed of a first component, and a first gas can be ejected from the first component to float the substrate; The surface of the substrate conveying region facing the substrate is composed of a plurality of second components, and a second gas can be ejected from the second components to float the substrate; The plurality of second components in the substrate transport region are arranged separately from each other; The first component is arranged on a stone panel, and the plurality of second components are arranged on a metal panel.

2. The laser processing device according to claim 1, characterized in that: The first component comprises: First region; a second region adjacent to the first region; and a third area adjacent to the second area; In a top-down perspective, the third area overlaps with the focus of the laser. The control accuracy of the floating height of the substrate in the second region is higher than the control accuracy of the floating height of the substrate in the first region, and A control accuracy of the floating height of the substrate in the third region is higher than the control accuracy of the floating height of the substrate in the second region.

3. The laser processing device according to claim 2, characterized in that: The first component is connected to a first exhaust pipe in the first region, to a second exhaust pipe in the second region, and to a third exhaust pipe in the third region; the first gas is supplied to the first component through the first exhaust pipe, the second exhaust pipe, and the third exhaust pipe; The first gas is ejected from the first member to the substrate, and Flow rates or pressures of the first gas passing through the first exhaust pipe, the second exhaust pipe, and the third exhaust pipe, respectively, can be independently controlled.

4. The laser processing device according to claim 2, characterized in that: The first component is connected to a first air intake pipe in the first region, connected to a second air intake pipe in the second region, and connected to a third air intake pipe in the third region; The first gas is sucked in through the first intake pipe, the second intake pipe and the third intake pipe; The flow rates or pressures of the first gas passing through the first intake pipe, the second intake pipe, and the third intake pipe, respectively, can be independently controlled.

5. The laser processing device according to any one of claims 2 to 4, characterized in that: A floating height of the substrate from the surface of the first component in the first region is greater than a floating height of the substrate from the surface of the first component in the second region, and The floating height of the substrate from the surface of the first member in the second region is greater than the floating height of the substrate from the surface of the first member in the third region.

6. The laser processing device according to any one of claims 1 to 4, characterized in that: The first component is a porous body, and The first gas can be ejected from the porous body.

7. The laser processing device according to any one of claims 1 to 4, characterized in that: The first component is ceramic.

8. The laser processing device according to any one of claims 1 to 4, characterized in that: Each of the plurality of second members has a plurality of through holes capable of ejecting the second gas.

9. The laser processing device according to any one of claims 1 to 4, characterized in that: The plurality of second components are made of metal.

10. The laser processing device according to claim 9, characterized in that: The plurality of second components contain aluminum as a main component.

11. The laser processing device according to any one of claims 1 to 4, characterized in that: The substrate is a glass substrate.

12. The laser processing device according to any one of claims 1 to 4, characterized in that: An amorphous semiconductor film is formed over the substrate, and By laser irradiation, the amorphous semiconductor film is transformed into a polycrystalline semiconductor film.

13. The laser processing device according to claim 12, characterized in that: The polycrystalline semiconductor film constitutes a thin film transistor.

14. The laser processing device according to claim 13, characterized in that: The thin film transistor is used to control a display.

15. A laser processing device, characterized in that: include: Laser irradiation unit; and A transport table capable of allowing the substrate to float and be transported; Wherein, the transport platform comprises: a laser irradiation region in which the substrate is irradiated with laser light irradiated from the laser irradiation unit; and a substrate conveying area separated from the laser irradiation area; wherein a surface of the laser irradiation region facing the substrate is composed of a first component, a surface of the substrate conveying region facing the substrate is composed of a plurality of second components, and a first gas can be ejected from the first component to float the substrate; The first component comprises: First region; a second region adjacent to the first region; and a third area adjacent to the second area; In a top-down perspective, the third area overlaps with the focus of the laser. The control accuracy of the floating height of the substrate in the second region is higher than the control accuracy of the floating height of the substrate in the first region, and The control accuracy of the floating height of the substrate in the third region is higher than the control accuracy of the floating height of the substrate in the second region; The first component is arranged on a stone panel, and the plurality of second components are arranged on a metal panel.

16. The laser processing device according to claim 15, characterized in that: The first component is connected to a first exhaust pipe in the first region, to a second exhaust pipe in the second region, and to a third exhaust pipe in the third region; The first gas is supplied to the first component through the first exhaust pipe, the second exhaust pipe, and the third exhaust pipe, The first gas is ejected from the first member to the substrate, and Flow rates or pressures of the first gas passing through the first exhaust pipe, the second exhaust pipe, and the third exhaust pipe, respectively, can be independently controlled.

17. The laser processing device according to claim 15 or 16, characterized in that: The first component is connected to a first air intake pipe in the first region, connected to a second air intake pipe in the second region, and connected to a third air intake pipe in the third region; The first gas is sucked in through the first intake pipe, the second intake pipe and the third intake pipe; The flow rates or pressures of the first gas passing through the first intake pipe, the second intake pipe, and the third intake pipe, respectively, can be independently controlled.

18. The laser processing device according to claim 15 or 16, characterized in that: A floating height of the substrate from the surface of the first component in the first region is greater than a floating height of the substrate from the surface of the first component in the second region, and The floating height of the substrate from the surface of the first member in the second region is greater than the floating height of the substrate from the surface of the first member in the third region.

19. The laser processing device according to claim 15 or 16, characterized in that: The first component is a porous body, and The first gas can be ejected from the porous body.

20. The laser processing device according to claim 15 or 16, characterized in that: The first component is ceramic.

21. The laser processing device according to claim 15 or 16, characterized in that: The substrate is a glass substrate.

22. The laser processing device according to claim 15 or 16, characterized in that: An amorphous semiconductor film is formed over the substrate, and By laser irradiation, the amorphous semiconductor film is transformed into a polycrystalline semiconductor film.

23. The laser processing device according to claim 22, characterized in that: The polycrystalline semiconductor film constitutes a thin film transistor.

24. The laser processing device according to claim 23, characterized in that: The thin film transistor is used to control a display.

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