Storage device, substrate processing device, and method of using the storage device

Abstract

The present invention provides a storage container, a substrate processing device, and a method for using the storage container. It is used to prevent a processing liquid containing bubbles from being supplied to a substrate as a processed object. The storage container comprises: a container portion, which has an upper wall, a side wall, and a bottom wall, and contains a processing liquid inside; a liquid ejection path, which has a liquid ejection port arranged at a position higher than the liquid level of the processing liquid contained in the container portion, and can eject the processing liquid into the container portion; and a gas ejection path, which has a gas ejection port arranged at a position higher than the liquid level, and can eject gas into the container portion. The liquid ejection path can eject the processing liquid from the liquid ejection port in such a way that the processing liquid hits a portion of the side wall that is above the liquid level. The gas ejection path can eject the gas from the gas ejection port in such a way that the gas hits a portion of the inner surface of the container portion that is above the liquid level.

Description

Technical Field

[0001] The present disclosure relates to a storage container, a substrate processing device, and a method for using the storage container. Background Art

[0002] Patent Document 1 discloses a resist processing apparatus that processes a processing object by rotating the processing object. The resist processing apparatus includes a means for supplying a processing resist or a developer to a processing surface of the processing object and a means for detecting the remaining amount of a storage container (tank) for storing the processing resist or the developer.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 1-220827 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] A chemical solution that easily foams may be used as a processing solution such as a resist or a developer. The present invention provides a reservoir, a substrate processing apparatus, and a method for using the reservoir that can prevent a processing solution containing bubbles from being supplied to a substrate as a processing target.

[0008] Solutions for solving problems

[0009] A storage device according to one aspect of the present disclosure includes: a container portion having an upper wall, a side wall, and a bottom wall, and containing a processing liquid therein; a liquid ejection path having a liquid ejection port disposed at a position higher than the liquid level of the processing liquid contained in the container portion, and capable of ejecting the processing liquid into the container portion; and a gas ejection path having a gas ejection port disposed at a position higher than the liquid level, and capable of ejecting gas into the container portion. The liquid ejection path is capable of ejecting the processing liquid from the liquid ejection port in such a manner that the processing liquid hits a portion of the inner surface of the side wall that is above the liquid level. The gas ejection path is capable of ejecting the gas from the gas ejection port in such a manner that the gas hits a portion of the inner surface of the container portion that is above the liquid level.

[0010] In the above tank, an extending direction of an end portion of the liquid ejection path including the liquid ejection port may be inclined with respect to a vertical direction.

[0011] For the above-mentioned storage container, it may be that, in a plane intersecting the vertical direction, the cross-section of the inner surface of the side wall is circular, and when observed from the vertical direction, an imaginary line extending along the extension direction of the end of the liquid ejection path including the liquid ejection port, and an imaginary line extending along the extension direction of the end of the gas ejection path including the gas ejection port are not orthogonal to the inner surface of the side wall.

[0012] In the above storage device, the liquid ejection port and the gas ejection port may be opposed to each other across the center of the container portion when viewed in a vertical direction.

[0013] The above-mentioned storage container may also include a plurality of liquid level detection units for respectively detecting the situation where the height of the liquid level reaches a predetermined position, and the predetermined position detected by each of the plurality of liquid level detection units is lower than the liquid nozzle, the gas nozzle, the position where the processing liquid ejected from the liquid nozzle hits the side wall, and the position where the gas ejected from the gas nozzle hits the container part.

[0014] In the above-described reservoir, at least a portion of the inner surface of the side wall located below the liquid discharge port may be inclined with respect to the vertical direction so that the processing liquid flows along the inner surface of the side wall.

[0015] In the above-mentioned storage device, the liquid ejection path may include: an ejection portion including the liquid ejection port; and a delivery portion that delivers the processing liquid to the ejection portion, and the flow path cross-sectional area of ​​the ejection portion is larger than that of the delivery portion.

[0016] A substrate processing device according to one aspect of the present disclosure comprises: a liquid supply portion having a storage container for temporarily storing a processing liquid used for substrate processing; and a nozzle for spraying the processing liquid supplied from the liquid supply portion toward a substrate to be processed, the storage container comprising: a container portion having an upper wall, a side wall and a bottom wall, and containing the processing liquid inside; a liquid spraying path having a liquid spraying port arranged at a position higher than a liquid level of the processing liquid contained in the container portion, and capable of spraying the processing liquid into the container portion; and a gas spraying path having a gas spraying port arranged at a position higher than the liquid level, and capable of spraying gas into the container portion, the liquid spraying path being capable of spraying the processing liquid from the liquid spraying port in a manner that the processing liquid hits a portion of the inner surface of the side wall that is above the liquid level, and the gas spraying path being capable of spraying the gas from the gas spraying port in a manner that the gas hits a portion of the inner surface of the container portion that is above the liquid level.

[0017] For the above-mentioned substrate processing device, it can also be that the substrate processing device is further equipped with a control device for controlling the liquid supply part, and the liquid supply part also has: a gas delivery pipe, which supplies the gas to the storage container via the gas ejection path; and a pressure regulating part, which is arranged on the gas delivery pipe and is used to regulate the pressure formed by the gas in the container part, and the control device controls the pressure regulating part so that the pressure in the container part is gradually increased when the container part is pressurized from a state where the pressure is released.

[0018] In a method for using a storage device according to one aspect of the present disclosure, the storage device comprises: a container portion, which has an upper wall, a side wall and a bottom wall, and contains a processing liquid inside; a liquid ejection path, which has a liquid ejection port arranged at a position higher than the liquid level of the processing liquid contained in the container portion, and can eject the processing liquid into the container portion; and a gas ejection path, which has a gas ejection port arranged at a position higher than the liquid level, and can eject gas into the container portion, characterized in that the method for using the storage device includes: ejecting the processing liquid from the liquid ejection port in a manner that the processing liquid hits a portion of the inner surface of the side wall that is above the liquid level; and ejecting the gas from the gas ejection port in a manner that the gas hits a portion of the inner surface of the container portion that is above the liquid level.

[0019] In a method for using a storage device according to one aspect of the present disclosure, the storage device comprises: a container portion having an upper wall, a side wall and a bottom wall, and containing a processing liquid therein; a liquid ejection path having a liquid ejection port arranged at a position higher than a liquid level of the processing liquid contained in the container portion, and capable of ejecting the processing liquid into the container portion; a gas ejection path having a gas ejection port arranged at a position higher than the liquid level, and capable of ejecting gas into the container portion; and a discharge portion for exhausting the gas in the container portion, characterized in that the method for using the storage device comprises: ejecting the gas from the gas ejection port in a manner that the gas in the container portion is discharged from the discharge portion and the gas hits a portion of the inner surface of the side wall that is above the liquid level.

[0020] The method of using the above-mentioned storage container can also be that gas is ejected from the gas outlet so that the gas in the container is discharged from the discharge portion arranged in the central portion of the area surrounded by the side walls when viewed from above, and an airflow that rotates along the inner surface of the side wall above the liquid surface is generated.

[0021] Effects of the Invention

[0022] According to the present disclosure, there are provided a tank capable of preventing a processing liquid containing bubbles from being supplied to a substrate, a substrate processing apparatus, and a method of using the tank. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a schematic diagram illustrating a schematic structure of a substrate processing system.

[0024] Figure 2 It is a schematic diagram illustrating the internal structure of the coating and developing device.

[0025] Figure 3 It is a schematic diagram illustrating the structure of the coating unit.

[0026] Figure 4 It is a schematic diagram illustrating the structure of the liquid supply unit.

[0027] Figure 5 This is a perspective view schematically showing an example of the general structure of a storage container.

[0028] Fig. 6(a) is a schematic diagram illustrating a cross-sectional structure of a reservoir when viewed from the side, and Fig. 6(b) is a schematic diagram illustrating a cross-sectional structure of a reservoir when viewed from above.

[0029] Figure 7 This is a timing chart showing an example of various operations of the liquid supply unit.

[0030] Figure 8 This is a flowchart showing an example of a replenishment procedure for replenishing the storage container.

[0031] Fig. 9 This is a schematic diagram for explaining an example of how to use the storage device.

[0032] Figure 10(a) to Figure 10(d) This is a diagram for explaining an example of a procedure for using the processing liquid in the tank.

[0033] Fig.11 This is a flowchart showing an example of a procedure for using the processing liquid in the storage container.

[0034] Fig.12 It is a schematic diagram illustrating the structure of a storage container according to a modified example.

[0035] Fig. 13(a) is a schematic diagram illustrating a cross-sectional structure of a reservoir when viewed from the side. Fig. 13(b) is a schematic diagram illustrating a cross-sectional structure of a reservoir when viewed from above. DETAILED DESCRIPTION

[0036] Various exemplary embodiments are described below.

[0037] A storage device according to one aspect of the present disclosure includes: a container portion having an upper wall, a side wall, and a bottom wall, and containing a processing liquid therein; a liquid ejection path having a liquid ejection port disposed at a position higher than the liquid level of the processing liquid contained in the container portion, and capable of ejecting the processing liquid into the container portion; and a gas ejection path having a gas ejection port disposed at a position higher than the liquid level, and capable of ejecting gas into the container portion. The liquid ejection path is capable of ejecting the processing liquid from the liquid ejection port in such a manner that the processing liquid hits a portion of the inner surface of the side wall that is above the liquid level. The gas ejection path is capable of ejecting gas from the gas ejection port in such a manner that the gas hits a portion of the inner surface of the container portion that is above the liquid level.

[0038] In this storage device, the processing liquid ejected from the liquid ejection port hits a portion of the inner surface of the side wall of the container portion that is above the liquid surface. In addition, the gas ejected from the gas ejection port hits a portion of the container portion that is above the liquid surface. Therefore, the ejected processing liquid and gas are supplied to the container portion in a manner that does not directly hit the liquid surface of the processing liquid already contained in the container portion. As a result, the bubbling of the processing liquid caused by the processing liquid and gas directly hitting the liquid surface is suppressed, thereby preventing the processing liquid containing bubbles from being supplied to the substrate.

[0039] Alternatively, the extension direction of the end of the liquid ejection path including the liquid ejection port is inclined relative to the vertical direction. In this case, the component of the flow velocity of the processing liquid along the vertical direction is reduced compared to the case where the processing liquid is ejected downward along the vertical direction. Therefore, when the processing liquid supplied from the liquid ejection path hits the processing liquid already contained in the container, the force acting downward along the vertical direction can be reduced, thereby more reliably suppressing the foaming of the processing liquid caused by the ejection of the processing liquid.

[0040] Alternatively, in a plane intersecting the vertical direction, the cross-section of the inner surface of the side wall is circular. Alternatively, when viewed from the vertical direction, an imaginary line extending in the extension direction of the end of the liquid ejection path including the liquid ejection outlet, and an imaginary line extending in the extension direction of the end of the gas ejection path including the gas ejection outlet are not orthogonal to the inner surface of the side wall. In this case, the treatment liquid ejected from the liquid ejection outlet and the gas ejected from the gas ejection outlet flow along the inner surface of the side wall. Therefore, the ejected treatment liquid and gas are more reliably prevented from directly hitting the liquid surface of the treatment liquid contained in the container portion. As a result, the foaming of the treatment liquid caused by the treatment liquid and gas directly hitting the liquid surface is more reliably suppressed.

[0041] Alternatively, when viewed from the vertical direction, the liquid ejection port and the gas ejection port are opposite to each other across the center of the container portion. In this case, the processing liquid ejected from the liquid ejection port is supplied into the container portion in a manner that does not hit the gas ejection path including the gas ejection port. As a result, it is possible to prevent the processing liquid ejected from the liquid ejection port from hitting other components before reaching the processing liquid in the container portion, which may cause the processing liquid to foam.

[0042] Alternatively, the storage device may further include a plurality of liquid level detection units for respectively detecting when the height of the liquid level reaches a predetermined position. Alternatively, the predetermined positions detected by the plurality of liquid level detection units may be lower than the liquid ejection port, the gas ejection port, the position where the processing liquid ejected from the liquid ejection port hits the side wall, and the position where the gas ejected from the gas ejection port hits the container portion. In this case, for example, by setting the processing liquid to be stored until the highest predetermined position, it is possible to more reliably prevent the gas and processing liquid ejected into the container portion from directly hitting the liquid level.

[0043] Alternatively, at least a portion of the inner surface of the side wall located below the liquid ejection port is inclined relative to the vertical direction so that the processing liquid flows along the inner surface of the side wall. In this case, when the processing liquid flowing along the inner surface of the side wall reaches the liquid surface, the vertical downward component of the flow velocity of the processing liquid becomes smaller. As a result, it is possible to suppress the foaming of the processing liquid caused by the processing liquid flowing along the side wall hitting the liquid surface.

[0044] Alternatively, the liquid ejection path may include: an ejection portion including a liquid ejection port; and a delivery portion that delivers the treatment liquid to the ejection portion. Alternatively, the flow path cross-sectional area of ​​the ejection portion may be larger than the flow path cross-sectional area of ​​the delivery portion. In this structure, it is possible to prevent the characteristics of the liquid from being destroyed (vibration of the liquid) due to the release of the pressure applied to the treatment liquid immediately after the treatment liquid is ejected into the reservoir.

[0045] A substrate processing device according to another aspect of the present disclosure comprises: a liquid supply unit having a storage device for temporarily storing a processing liquid for substrate processing; and a nozzle for spraying the processing liquid supplied from the liquid supply unit toward a substrate to be processed. The storage device comprises: a container unit having an upper wall, a side wall, and a bottom wall, and containing a processing liquid inside; a liquid spraying path having a liquid spraying port arranged at a position higher than the liquid level of the processing liquid contained in the container unit, and capable of spraying the processing liquid into the container unit; and a gas spraying path having a gas spraying port arranged at a position higher than the liquid level, and capable of spraying gas into the container unit. The liquid spraying path can spray the processing liquid from the liquid spraying port in a manner that the processing liquid hits a portion of the inner surface of the side wall that is above the liquid level. The gas spraying path can spray the gas from the gas spraying port in a manner that the gas hits a portion of the inner surface of the container unit that is above the liquid level. In this case, as described above, the bubbling of the processing liquid caused by the processing liquid and the gas directly hitting the liquid level is suppressed. As a result, it is possible to prevent the processing liquid containing bubbles from being supplied to the substrate.

[0046] Alternatively, the substrate processing apparatus further includes a control device for controlling the liquid supply unit. Alternatively, the liquid supply unit further includes: a gas delivery pipe that supplies gas to the reservoir via a gas ejection path; and a pressure regulating unit that is provided on the gas delivery pipe and is used to regulate the pressure formed by the gas in the container unit. Alternatively, the control device controls the pressure regulating unit so that the pressure in the container unit is gradually increased when the container unit is pressurized from a state where the pressure is released. In this case, since pressure is applied to the processing liquid contained in the reservoir in stages, bubbling of the processing liquid when pressure is applied can be prevented.

[0047] Another aspect of the present disclosure is a method for using a storage device, which includes: a container portion having an upper wall, a side wall, and a bottom wall, and containing a processing liquid inside; a liquid ejection path having a liquid ejection port disposed at a position higher than the liquid level of the processing liquid contained in the container portion, and capable of ejecting the processing liquid into the container portion; and a gas ejection path having a gas ejection port disposed at a position higher than the liquid level, and capable of ejecting gas into the container portion. The method for using the storage device includes: ejecting the processing liquid from the liquid ejection port in such a manner that the processing liquid hits a portion of the inner surface of the side wall that is above the liquid level; and ejecting the gas from the gas ejection port in such a manner that the gas hits a portion of the inner surface of the container portion that is above the liquid level. In this case, as described above, the bubbling of the processing liquid caused by the processing liquid and the gas directly hitting the liquid level is suppressed. As a result, it is possible to prevent the processing liquid containing bubbles from being supplied to the substrate.

[0048] Another aspect of the present disclosure is a method for using a storage device, which includes: a container portion having an upper wall, a side wall, and a bottom wall, and containing a processing liquid inside; a liquid ejection path having a liquid ejection port disposed at a position higher than the liquid level of the processing liquid contained in the container portion, and capable of ejecting the processing liquid into the container portion; a gas ejection path having a gas ejection port disposed at a position higher than the liquid level, and capable of ejecting gas into the container portion; and a discharge portion for exhausting the gas in the container portion. The method for using the storage device includes: ejecting gas from the gas ejection port in a manner that the gas in the container portion is discharged from the discharge portion and the gas hits a portion of the inner surface of the side wall that is above the liquid level. For example, even in the case where bubbles remain on the inner surface of the side wall when the processing liquid in the container portion is reduced, an airflow formed by the gas ejection is generated in the container portion, and the bubbles remaining on the inner surface of the side wall can be removed. That is, defoaming in the storage device can be performed.

[0049] Hereinafter, various exemplary embodiments will be described in detail with reference to the drawings. In the description, the same elements or elements having the same functions are denoted by the same reference numerals, and repeated descriptions are omitted.

[0050] [Substrate processing system]

[0051] Figure 1 The substrate processing system 1 shown is a system for forming a photosensitive coating on a substrate, exposing the photosensitive coating, and developing the photosensitive coating. The substrate to be processed is, for example, a semiconductor wafer W. The photosensitive coating is, for example, a resist film. The substrate processing system 1 includes a coating and developing device 2 and an exposure device 3. The exposure device 3 performs an exposure process on the resist film (photosensitive coating) formed on the wafer W (substrate). Specifically, energy rays are irradiated to the exposure target portion of the resist film using a method such as liquid immersion exposure. The coating and developing device 2 performs a process of forming a resist film on the surface of the wafer W (substrate) before the exposure process performed by the exposure device 3, and performs a development process of the resist film after the exposure process.

[0052] [Substrate processing equipment]

[0053] Hereinafter, the structure of the coating and developing device 2 will be described as an example of a substrate processing device. Figure 1 and Figure 2 As shown, the coating and developing device 2 includes a carrier module 4 , a processing module 5 , a switching module 6 and a control device 100 .

[0054] The carrier module 4 is used to introduce the wafer W into the coating and developing device 2 and to guide the wafer W out of the coating and developing device 2. For example, the carrier module 4 can support a plurality of carriers C for the wafer W, and has a conveying device A1 including a transfer arm built therein. The carrier C is used to accommodate a plurality of round wafers W, for example. The conveying device A1 takes out the wafer W from the carrier C and transfers it to the processing module 5, and receives the wafer W from the processing module 5 and returns it to the carrier C.

[0055] The processing module 5 has a plurality of processing modules 11, 12, 13, and 14. The processing modules 11, 12, and 13 have built-in coating units U1, heat treatment units U2, and a transfer device A3 including a transfer arm for transferring wafers W to these units.

[0056] The processing module 11 forms an underlayer film on the surface of the wafer W using the coating unit U1 and the thermal processing unit U2. The coating unit U1 of the processing module 11 coats the processing liquid for forming the underlayer film onto the wafer W. The thermal processing unit U2 of the processing module 11 performs various thermal processes accompanying the formation of the underlayer film.

[0057] The processing module 12 forms a resist film on the lower film using the coating unit U1 and the thermal processing unit U2. The coating unit U1 of the processing module 12 coats a processing liquid for forming a resist film onto the lower film. The thermal processing unit U2 of the processing module 12 performs various thermal processes accompanying the formation of the resist film.

[0058] The processing module 13 forms an upper film on the resist film using the coating unit U1 and the heat treatment unit U2. The coating unit U1 of the processing module 13 coats the upper film forming liquid onto the resist film. The heat treatment unit U2 of the processing module 13 performs various heat treatments accompanying the formation of the upper film.

[0059] The processing component 14 is built with: a coating unit U1, a heat treatment unit U2, and a conveying device A3 for conveying wafers W to these units. The processing component 14 uses the coating unit U1 and the heat treatment unit U2 to develop the resist film after exposure. The coating unit U1 applies a developer to the surface of the exposed wafer W. In addition, following the coating process of the developer, after applying the chemical solution (processing solution), the coating unit U1 rinses the applied developer with a rinse solution to develop the resist film. The heat treatment unit U2 performs various heat treatments accompanying the development process. As specific examples of heat treatment, there can be listed a heat treatment before the development process (PEB: Post Exposure Bake), a heat treatment after the development process (PB: Post Bake), and the like.

[0060] A shelf unit U10 is provided on the carrier module 4 side in the processing module 5. The shelf unit U10 is divided into a plurality of cells arranged in the vertical direction. A conveying device A7 including a lifting arm is provided near the shelf unit U10. The conveying device A7 lifts and lowers the wafer W between cells of the shelf unit U10.

[0061] A shelf unit U11 is provided on the adapter module 6 side in the processing module 5. The shelf unit U11 is divided into a plurality of cells arranged in the vertical direction.

[0062] The transfer module 6 is used to transfer the wafer W to the exposure device 3. For example, the transfer module 6 has a conveying device A8 including a transfer arm built therein, and is connected to the exposure device 3. The conveying device A8 transfers the wafer W arranged in the rack unit U11 to the exposure device 3. The conveying device A8 receives the wafer W from the exposure device 3 and returns it to the rack unit U11.

[0063] The control device 100 controls the coating and developing device 2 to perform the coating and developing process in the following steps. First, the control device 100 controls the conveying device A1 to convey the wafer W in the carrier C to the shelf unit U10, and controls the conveying device A7 to arrange the wafer W in the grid unit for the processing module 11.

[0064] Next, the control device 100 controls the conveying device A3 to convey the wafer W of the rack unit U10 to the coating unit U1 and the heat treatment unit U2 in the processing module 11. In addition, the control device 100 controls the coating unit U1 and the heat treatment unit U2 to form a lower film on the surface of the wafer W. After that, the control device 100 controls the conveying device A3 to return the wafer W with the lower film formed thereon to the rack unit U10, and controls the conveying device A7 to arrange the wafer W in the grid unit for the processing module 12.

[0065] Next, the control device 100 controls the conveying device A3 to convey the wafer W of the rack unit U10 to the coating unit U1 and the heat treatment unit U2 in the processing module 12. In addition, the control device 100 controls the coating unit U1 and the heat treatment unit U2 to form a resist film on the lower film of the wafer W. After that, the control device 100 controls the conveying device A3 to return the wafer W to the rack unit U10, and controls the conveying device A7 to arrange the wafer W in the grid unit for the processing module 13.

[0066] Next, the control device 100 controls the conveying device A3 to convey the wafer W of the rack unit U10 to each unit in the processing module 13. In addition, the control device 100 controls the coating unit U1 and the heat treatment unit U2 to form an upper film on the resist film of the wafer W. Thereafter, the control device 100 controls the conveying device A3 to convey the wafer W to the rack unit U11.

[0067] Next, the control device 100 controls the conveying device A8 to convey the wafer W in the shelf unit U11 to the exposure device 3. Thereafter, the control device 100 controls the conveying device A8 to receive the wafer W subjected to the exposure process from the exposure device 3 and to arrange the wafer W in the cell for the processing module 14 in the shelf unit U11.

[0068] Next, the control device 100 controls the conveying device A3 to convey the wafer W of the rack unit U11 to each unit in the processing assembly 14, and controls the coating unit U1 and the heat treatment unit U2 to perform a developing process including a coating process of a developer, a chemical solution, and a rinse solution on the resist film of the wafer W. After that, the control device 100 controls the conveying device A3 to return the wafer W to the rack unit U10, and controls the conveying device A7 and the conveying device A1 to return the wafer W to the carrier C. The coating and developing process is completed through the above steps.

[0069] The specific structure of the substrate processing apparatus is not limited to the structure of the coating and developing apparatus 2 as exemplified above. The substrate processing apparatus may have any structure as long as it includes a coating unit capable of coating a processing liquid such as a chemical solution, a processing liquid supply unit, and a control device capable of controlling them.

[0070] (Coating unit)

[0071] Next, refer to Figure 3 Next, an example of the structure of each of the plurality of coating units U1 of the processing module 14 will be described. Figure 3 The coating unit U1 shown is configured to apply a processing liquid to the surface Wa of the wafer W. The coating unit U1 includes a rotation holding unit 21 and a nozzle 22 .

[0072] The rotation holding unit 21 holds the wafer W and rotates the wafer W based on the operation instruction of the control device 100. The rotation holding unit 21 includes a holding unit 23 and a driving unit 24. The holding unit 23 supports the center of the wafer W horizontally arranged so that the surface Wa faces upward, and holds the wafer W by adsorption (for example, vacuum adsorption) or the like. The driving unit 24 is a rotation actuator with, for example, an electric motor as a power source, which rotates the holding unit 23 around a vertical rotation axis. As a result, the wafer W rotates around the vertical rotation axis.

[0073] The nozzle 22 sprays (supplies) the processing liquid onto the surface Wa of the wafer W. The nozzle 22 is arranged above the wafer W and sprays the processing liquid downward. Each coating unit U1 may also include a nozzle moving mechanism (not shown) for moving the nozzle 22. The nozzle moving mechanism uses, for example, an electric motor as a power source to move the nozzle 22 along a horizontal straight line passing through the rotation axis.

[0074] (Liquid supply unit)

[0075] The processing module 14 includes a liquid supply unit 30 for supplying the processing liquid to the nozzles 22 of each of the plurality of coating units U1. Figure 4 The liquid supply unit 30 for supplying the processing liquid to the nozzles 22 (nozzles 22A, 22B, and 22C) of the three coating units U1 is schematically shown as an example. As the processing liquid supplied by the liquid supply unit 30, a chemical solution used after the application of the developer and before the application of the rinse liquid can be listed. The chemical solution supplied by the liquid supply unit 30 can contain both a surfactant and a water-soluble polymer. As the water-soluble polymer, a homopolymer or a multipolymer of an ethylene monomer containing, for example, a hydrophilic group or a condensation polymer having a hydrophilic group can be listed. The chemical solution supplied by the liquid supply unit 30 can also have a foaming property (a property that is easy to foam). For example, the chemical solution supplied by the liquid supply unit 30 can also have a property that is easier to foam than at least one of the developer and the rinse liquid.

[0076] The liquid supply unit 30 includes a pressurizing and conveying unit 32 and a liquid delivery line 40. The pressurizing and conveying unit 32 delivers the processing liquid to the liquid delivery line 40 by applying pressure. The liquid delivery line 40 is provided downstream of the pressurizing and conveying unit 32, and guides the processing liquid delivered from the pressurizing and conveying unit 32 to the nozzle 22. For example, the pressurizing and conveying unit 32 includes: a pressurizing unit 50, a plurality of (here, two) liquid delivery units 60A and 60B, and a liquid replenishing unit 70.

[0077] The pressurizing unit 50 pressurizes the processing liquid in the reservoirs 61A and 61B (to be discussed later) toward the nozzle 22. The pressurizing unit 50 includes: a pressurizing source GS, pressurizing pipes 53, 54A, 54B (gas delivery pipes), a pressure regulating valve 52, and valves 55A and 55B. The pressurizing source GS can supply gas (for example, inert gas) to the reservoirs 61A and 61B via the pressurizing pipes 53, 54A, and 54B. As the inert gas, nitrogen can be cited, for example. One end of the pressurizing pipe 53 is connected to the pressurizing source GS, and the other end of the pressurizing pipe 53 branches into pressurizing pipes 54A and 54B. The pressurizing pipes 54A and 54B are connected to the reservoirs 61A and 61B, respectively.

[0078] The pressure regulating valve 52 is provided in the pressurizing pipe 53. The pressure regulating valve 52 is, for example, an electronic valve, and operates based on an instruction from the control device 100. The pressure regulating valve 52 regulates the pressure in the reservoirs 61A and 61B by regulating the flow rate of gas flowing from the pressurizing source GS into the reservoirs 61A and 61B.

[0079] Valves 55A and 55B are provided in pressurizing pipes 54A and 54B, respectively. Valves 55A and 55B are, for example, air-operated valves. Valves 55A and 55B open and close the flow paths in pressurizing pipes 54A and 54B according to the operation instructions of the control device 100. By closing valves 55A and 55B, the pressure generated by the pressurizing unit 50 can be blocked.

[0080] The liquid supplying parts 60A and 60B temporarily store the processing liquid supplied from the liquid supplying part 70 to be described later, and deliver the processing liquid in a pressurized state toward the nozzle 22. The liquid supplying parts 60A and 60B are configured substantially the same. Of the liquid supplying parts 60A and 60B, the liquid supplying part 60A includes a reservoir 61A, a valve 63A, and a degassing pipe 66A.

[0081] The reservoir 61A has a function of temporarily storing the treatment liquid. The upper portion of the reservoir 61A is connected to the pressure regulating valve 52 via the pressurizing pipes 53 and 54A. Thus, the inside of the reservoir 61A can be pressurized by the pressurizing unit 50. In addition, the upper portion of the reservoir 61A is connected to the degassing pipe 66A. The end of the degassing pipe 66A is open to the outside of the reservoir 61A. A specific example of the reservoir 61A will be discussed later. In addition, the reservoir 61A is also referred to as a "reservoir" or a "storage tank".

[0082] Valve 63A is provided in the degassing pipe 66A. Valve 63A is, for example, an air-operated valve. Valve 63A opens and closes the flow path in the degassing pipe 66A according to the action instruction of the control device 100. By opening valve 63A, the pressure in the reservoir 61A can be released to the outside of the reservoir 61A (the gas in the reservoir is discharged). In the state where valve 63A provided in the degassing pipe 66A is closed, the reservoir 61A is pressurized by the pressurizing part 50 by opening valve 55A. At this time, the pressure in the reservoir 61A is regulated by the pressure regulating valve 52. As an example, the pressure in the reservoir 61A can be adjusted to several hundred kPa (for example, 100 kPa to 300 kPa). The pressure in the reservoir 61A can also be adjusted according to the number of coating units U1 connected.

[0083] The liquid supply unit 60B includes a reservoir 61B, a valve 63B, and a degassing tube 66B. The liquid supply unit 60B has the same structure as the liquid supply unit 60A, and therefore, detailed description thereof will be omitted.

[0084] The liquid replenishing unit 70 replenishes the treatment liquid to the reservoirs 61A and 61B included in the liquid delivery units 60A and 60B. The liquid replenishing unit 70 includes a tank 71, a replenishing pipe 75, and a plurality of (two in this case) valves 78A and 78B. The pressurizing unit 50 also has a function of pressurizing the inside of the tank 71. For the purpose of pressurizing the inside of the tank 71, the pressurizing unit 50 further includes a pressurizing pipe 58 connected to a pressurizing source GS and a pressure regulating valve 56 and a valve 57 provided on the pressurizing pipe 58.

[0085] The tank 71 contains the processing liquid for replenishment. The capacity of the tank 71 may be larger than that of the reservoirs 61A and 61B. The upper portion of the tank 71 is connected to the pressurization source GS via the pressurization pipe 58. The tank 71 may be configured so that the processing liquid contained in the tank 71 is indirectly pressurized by the gas from the pressurization source GS. The processing liquid in the tank 71 is pressurized and transported to the reservoirs 61A and 61B respectively via the replenishment pipe 75 due to the pressure from the pressurization source GS. The replenishment pipe 75 includes: a first portion 76 extending from near the bottom of the tank 71 to the outside of the tank 71; and second portions 77A and 77B branching from the first portion 76 and connected to the liquid delivery portions 60A and 60B (reservoirs 61A and 61B), respectively.

[0086] The pressure regulating valve 56 regulates the pressure in the tank 71 by regulating the flow rate of gas flowing from the pressurizing source GS to the tank 71. The pressure in the tank 71 during pressurization may be lower than the pressure in the reservoirs 61A and 61B. As an example, the pressure in the tank 71 may be regulated to several tens of kPa (e.g., 30 kPa to 50 kPa). By opening the valve 57, the tank 71 is pressurized.

[0087] Valves 78A and 78B are provided in the second portions 77A and 77B of the supply pipe 75, respectively. Valve 78A opens and closes the flow path in the second portion 77A according to the operation instruction of the control device 100. Valve 78B has the same structure and function as valve 78A. By closing both valves 78A and 78B, it is possible to block the treatment liquid from being sent out from the tank 71. When the tank 71 is pressurized and valve 78B is closed, valve 78A is opened to replenish (supply) the treatment liquid from the tank 71 to the reservoir 61A. In addition, when the tank 71 is pressurized and valve 78A is closed, valve 78B is opened to replenish (supply) the treatment liquid from the tank 71 to the reservoir 61B.

[0088] The liquid delivery line 40 guides the processing liquid delivered from the pressure delivery unit 32 to the nozzles 22A, 22B, and 22C, respectively. The liquid delivery line 40 includes a liquid delivery pipe 43, a plurality of (two in this case) valves 42A and 42B, a degassing unit 44, a filter 45, a plurality of (three in this case) pressure regulating valves 46A to 46C, and a plurality of (three in this case) valves 47A to 47C.

[0089] The liquid supply pipe 43 guides the processing liquid from the reservoir 61A of the liquid supply section 60A to the nozzles 22A to 22C. Furthermore, the liquid supply pipe 43 guides the processing liquid from the reservoir 61B of the liquid supply section 60B to the nozzles 22A to 22C. The liquid supply pipe 43 includes: a plurality of first portions 43a and 43b, which are respectively connected to the lower portions of the reservoirs 61A and 61B; and a second portion 43c, which is formed by the first portions 43a and 43b merging and connecting. In addition, the liquid supply pipe 43 includes a plurality of third portions 43d to 43f branching from the second portion 43c toward the nozzles 22A to 22C.

[0090] Valves 42A and 42B correspond to the liquid delivery parts 60A and 60B (reservoirs 61A and 61B), respectively. Valve 42A is provided in the first part 43a of the liquid delivery pipe 43. Valve 42A opens and closes the flow path in the first part 43a according to the action instruction of the control device 100. Valve 42B is provided in the first part 43b and has the same structure and function as valve 42A. By closing both valves 42A and 42B, it is possible to block the treatment liquid from being delivered from both reservoirs 61A and 61B. When valve 42B is closed, valve 42A is opened to guide the treatment liquid from reservoir 61A toward nozzle 22. When valve 42A is closed, valve 42B is opened to guide the treatment liquid from reservoir 61B toward nozzle 22.

[0091] The degassing assembly 44 is provided in the second portion 43c of the liquid supply pipe 43. The degassing assembly 44 is used to remove bubbles contained in the treatment liquid flowing in the second portion 43c. In other words, the degassing assembly 44 removes gas dissolved in the treatment liquid. The degassing assembly 44 may use a separation membrane to remove bubbles, or may include a hollow fiber membrane as the separation membrane. The outer side of the hollow fiber membrane may also be depressurized by a vacuum pump or the like. In addition, the structure for removing bubbles is not limited to the above-mentioned structure.

[0092] The filter 45 is provided downstream of the degassing module 44 (on the side close to the nozzle 22) in the second portion 43c of the liquid feeding pipe 43. The filter 45 captures dust contained in the treatment liquid flowing in the second portion 43c. The filter 45 may also be configured to capture dust in the treatment liquid by pressure filtration.

[0093] The pressure regulating valves 46A, 46B, and 46C are respectively provided at the third portions 43d, 43e, and 43f of the liquid delivery pipe 43. The pressure regulating valve 46A is used to adjust the pressure applied to the processing liquid ejected from the nozzle 22A. The pressure regulating valve 46A operates based on the operation instruction of the control device 100. The pressure regulating valve 46A adjusts the flow rate of the processing liquid guided from either the reservoir 61A or 61B to the nozzle 22A, thereby adjusting the pressure applied to the processing liquid (the ejection amount per unit time from the nozzle). The pressure regulating valves 46B and 46C have the same structure and function as the structure and function of the pressure regulating valve 46A.

[0094] Valves 47A, 47B, and 47C are respectively provided in the third portion 43d, 43e, and 43f of the liquid delivery pipe 43. Valve 47A opens and closes the flow path in the third portion 43d according to the operation instruction of the control device 100. Valves 47B and 47C have the same structure and function as those of valve 47A. By closing all valves 47A, 47B, and 47C, a state is set in which the processing liquid is not ejected from any of the nozzles 22A to 22C. In addition, by opening any of valves 47A, 47B, and 47C, the processing liquid is ejected from the nozzle 22 corresponding to the valve toward the wafer W.

[0095] The liquid supply unit 30 configured as described above replenishes the processing liquid from the tank 71 to at least one of the reservoirs 61A and 61B by pressurizing by the pressurizing unit 50 of the pressurizing and conveying unit 32. The replenished processing liquid is temporarily stored in the reservoirs 61A and 61B, and the inside of the reservoirs is pressurized by the pressurizing unit 50. Then, the processing liquid pressurized in the reservoir is supplied from either of the reservoirs 61A and 61B toward the nozzle 22 via the liquid supply line 40.

[0096] (Storage Container)

[0097] Next, refer to Figure 5 6(a) and 6(b) , an example of the structure of the storages 61A and 61B will be described. Figure 5 2 shows a schematic perspective view of the reservoir 61A (reservoir 61B). The reservoir 61A includes a container portion 81, a liquid ejection path 85, a gas ejection path 86, a degassing path 87, a liquid delivery path 88, and a plurality of (here, three) liquid level sensors 89X, 89Y, and 89Z. Since the reservoirs 61A and 61B have substantially the same structure, the reservoir 61A will be described first.

[0098] The container 81 has an internal space S and contains the processing liquid in the internal space S. The internal space S of the container 81 containing the processing liquid (in the container 81) further contains gas. The length direction of the container 81 and the internal space S is in the vertical direction ( Figure 5 The container portion 81 and the internal space S may be, for example, cylindrical. The container portion 81 includes an upper wall 82, a side wall 83, and a bottom wall 84 that form the internal space S.

[0099] The side wall 83 forming the internal space S extends in the vertical direction. The inner surface of the side wall 83 forms the side surface of the internal space S. Figure 5In the example shown, the side wall 83 is formed so that the cross-sectional shape of the inner surface becomes a circle in the direction (horizontal direction) perpendicular to the vertical direction. In other words, the side wall 83 is formed in a cylindrical shape.

[0100] The upper wall 82 extends in the horizontal direction. The upper wall 82 is provided on the upper part of the side wall 83 in a manner continuous with the side wall 83, and covers the upper end of the side wall 83. That is, the inner surface of the upper wall 82 forms the upper surface of the internal space S. The upper wall 82 is formed in a flat plate shape, for example. Figure 5 In the example shown, the shape of the upper wall 82 is substantially square when viewed from the vertical direction, and is trapezoidal when viewed from the side. When viewed from the vertical direction, the outer edge of the upper wall 82 may also surround the outer edge of the side wall 83. The side surface 82a, which is one side surface of the upper wall 82, is inclined so that the width with respect to the opposite side surface becomes wider as it goes downward. The side surfaces other than the side surface 82a extend in the vertical direction.

[0101] The bottom wall 84 extends in the horizontal direction. The bottom wall 84 is provided at the lower part of the side wall 83 in a manner continuous with the side wall 83, and is provided to block the lower end of the side wall 83. That is, the inner surface of the bottom wall 84 forms the lower surface of the internal space S. The bottom wall 84 is formed in a flat plate shape. Figure 5 In the example shown, the bottom wall 84 has a circular shape when viewed from the vertical direction. The outer edge of the bottom wall 84 is substantially aligned with the outer edge of the side wall 83 when viewed from the vertical direction.

[0102] The liquid ejection path 85 guides the processing liquid to the container portion 81. The liquid ejection path 85 is configured to eject the processing liquid into the container portion 81 (internal space S). The liquid ejection path 85 is disposed at the upper portion of the container portion 81. Although the details will be discussed later, the processing liquid is ejected from the liquid ejection path 85 into the container portion 81 in a direction inclined at a predetermined angle from the upper side toward the lower side. One end of the liquid ejection path 85 (the end portion disposed outside the container portion 81) is connected to the second portion 77A of the supply pipe 75 included in the liquid supply portion 70 (see Figure 4 ). In other words, the liquid replenishing unit 70 replenishes the processing liquid into the container unit 81 via the liquid ejecting path 85 .

[0103] As shown in Fig. 6 (a) and Fig. 6 (b), the other end of the liquid ejection path 85 (the end on the side opposite to the above-mentioned one end) is located in the container portion 81. The liquid ejection path 85 includes: an external ejection path 85a, an internal ejection path 85b and a liquid ejection port 85c. Figure 5 The reservoir 61A shown in FIG. 6( a) is a cross-sectional view of a plane including the liquid ejection path 85 (center). Figure 5The shape of the upper wall 82 shown is different. FIG6( b ) schematically shows the Figure 5 The illustrated example is a cross section in the horizontal direction of the reservoir 61A in a state where the upper wall 82 is removed.

[0104] The external discharge path 85a is provided outside the container portion 81. The external discharge path 85a is a flow path formed in a tubular member for guiding the processing liquid toward the internal space S. Figure 5 In the example shown, one end of the external ejection path 85a is located on the side surface 82a of the upper wall 82. Most of the tubular member forming the external ejection path 85a extends in the vertical direction.

[0105] As shown in Fig. 6(a), the internal ejection path 85b is arranged inside the container part 81. The internal ejection path 85b is a flow path that guides the processing liquid toward the internal space S, and is connected to the external ejection path 85a. The internal ejection path 85b can also be, for example, a flow path formed by penetrating the upper wall 82 in a direction inclined relative to the vertical direction (from the side 82a to the lower surface of the upper wall 82). The internal ejection path 85b can also be, for example, a flow path formed in a tubular member that penetrates the upper wall 82 (side 82a) and extends in a direction inclined relative to the vertical direction. One end of the internal ejection path 85b is connected to one end of the external ejection path 85a at the side 82a. A liquid ejection port 85c is provided at the other end of the internal ejection path 85b.

[0106] The liquid ejection port 85c is a portion of the internal ejection path 85b of the liquid ejection path 85 that opens toward the internal space S. That is, the processing liquid guided in the liquid ejection path 85 (the external ejection path 85a and the internal ejection path 85b) is ejected from the liquid ejection port 85c to the internal space S. The liquid ejection port 85c may be, for example, an opening of the internal ejection path 85b formed by penetrating the upper wall 82 and located at the lower surface portion of the upper wall 82, or may be an opening at the end of a tubular member forming the internal ejection path 85b. The liquid ejection port 85c is located in the internal space S. The direction in which the end of the internal ejection path 85b including the liquid ejection port 85c extends is inclined at about 10° to 40° (20° as an example) relative to the horizontal direction. The end portion of the internal discharge path 85b including the liquid discharge port 85c refers to a portion of the liquid discharge path 85 (internal discharge path 85b) having a length sufficient to define the discharge direction of the processing liquid discharged from the liquid discharge port 85c.

[0107] The gas ejection path 86 is configured in the same manner as the liquid ejection path 85, except that it is used to guide gas instead of guiding the processing liquid. That is, the gas ejection path 86 is configured to guide the gas to the container portion 81 and eject the gas toward the inside of the container portion 81 (internal space S). The gas ejection path 86 is provided at the upper portion of the container portion 81. The gas is ejected from the gas ejection path 86 into the container portion 81 in a direction inclined at a predetermined angle from the upper side toward the lower side. One end of the gas ejection path 86 is connected to the pressurizing pipe 54A (see FIG. 5A ). Figure 4 ). In other words, the pressurizing unit 50 delivers gas into the container unit 81 via the gas ejection path 86 (pressurizes the container unit 81). The other end of the gas ejection path 86 is located inside the container unit 81 (refer to FIG. 6(a) and FIG. 6(b)). The gas ejection path 86 includes: an external ejection path 86a, an internal ejection path 86b, and a gas ejection port 86c.

[0108] The external ejection path 86a is provided outside the container portion 81. The external ejection path 86a is a flow path formed in a tubular member for guiding gas toward the internal space S. Figure 5 In the illustrated example, one end of the external ejection path 86a is located on the side surface 82a of the upper wall 82. Most of the tubular member forming the external ejection path 86a extends in the vertical direction.

[0109] The internal ejection path 86b is arranged inside the container portion 81. The internal ejection path 86b is a flow path that guides the gas toward the internal space S, and is connected to the external ejection path 86a. The internal ejection path 86b may be, for example, a flow path formed by penetrating the upper wall 82 in a direction inclined relative to the vertical direction (from the side 82a to the lower surface of the upper wall 82). The internal ejection path 86b may be, for example, a flow path formed in a tubular member that penetrates the upper wall 82 (side 82a) and extends in a direction inclined relative to the vertical direction. One end of the internal ejection path 86b is connected to one end of the external ejection path 86a at the side 82a. A gas ejection port 86c is provided at the other end of the internal ejection path 86b.

[0110] The gas ejection port 86c is a portion of the internal ejection path 86b of the gas ejection path 86 that opens toward the internal space S. That is, the gas guided in the gas ejection path 86 (the external ejection path 86a and the internal ejection path 86b) is ejected from the gas ejection port 86c to the internal space S. The gas ejection port 86c may be, for example, an opening located at the lower surface of the upper wall 82 in the internal ejection path 86b formed as a through hole in the upper wall 82. Alternatively, the gas ejection port 86c may be, for example, an opening at the end of a tubular member that forms the gas ejection port 86c. The gas ejection port 86c is located in the internal space S. The direction in which the end of the internal ejection path 86b including the gas ejection port 86c extends is inclined at about 10° to 40° (20° as an example) relative to the horizontal direction. The end portion of the internal ejection path 86b including the gas ejection port 86c is a portion of the gas ejection path 86 (internal ejection path 86b) having a length sufficient to define the ejection direction of the gas ejected from the gas ejection port 86c.

[0111] The degassing path 87 is used to guide the gas to the outside of the container part 81 and exhaust the gas from the container part 81 (internal space S). The degassing path 87 is provided in the upper part (upper wall 82) of the container part 81. The degassing path 87 is a flow path formed in a tubular member for guiding the gas to the outside of the container part 81. Figure 5 In the example shown, the tubular member forming the degassing path 87 extends in the vertical direction. One end of the degassing path 87 penetrates the upper wall 82 in the vertical direction. That is, one end of the degassing path 87 is connected to the internal space S. The other end of the degassing path 87 is connected to the degassing pipe 66A (see Figure 4 )connect.

[0112] The liquid delivery path 88 guides the processing liquid in a state of being pressurized by the gas to the outside of the container part 81, and delivers the processing liquid from the inside of the container part 81 (internal space S). The liquid delivery path 88 is provided at the lower part (bottom wall 84) of the container part 81. The liquid delivery path 88 is a flow path formed in a tubular member for guiding the processing liquid to the outside of the container part 81. Figure 5 In the example shown, the tubular member forming the liquid delivery path 88 extends in the vertical direction. One end of the liquid delivery path 88 passes through the bottom wall 84 in the vertical direction. That is, one end of the liquid delivery path 88 is connected to the internal space S. The other end of the liquid delivery path 88 is connected to the first portion 43a of the liquid delivery tube 43 (see Figure 4 )connect.

[0113] The liquid level sensors 89X, 89Y, 89Z (a plurality of liquid level detection units) are used to detect whether the liquid level LS of the processing liquid contained in the container portion 81 has reached a predetermined position. For example, the liquid level sensors 89X, 89Y, 89Z are arranged on the inner surface of the side wall 83. The liquid level sensors 89X, 89Y, 89Z are arranged in the order of liquid level sensors 89X, 89Y, 89Z from the top along the vertical direction. For example, the liquid level sensors 89X, 89Y, 89Z respectively detect that the liquid level LS has reached a predetermined position when the liquid level LS of the processing liquid reaches their respective setting positions. The method of detecting the liquid level LS by the liquid level sensors 89X, 89Y, 89Z may be any method, and a sensor that detects the liquid level LS according to a change in electrostatic capacitance may be used. The liquid level sensors 89X, 89Y, 89Z may also, for example, continuously send signals to the control device 100 until the liquid level LS reaches a predetermined position.

[0114] The liquid level sensor 89X can be arranged near the upper end of the side wall 83. In the storage container 61A, the processing liquid can be contained until the installation position of the liquid level sensor 89X (the detection position of the liquid level sensor 89X). The liquid level sensor 89Z can be arranged near the lower part of the side wall 83 (near the bottom wall 84). The liquid level sensor 89Y is arranged between the liquid level sensor 89X and the liquid level sensor 89Z in the vertical direction. For example, the liquid level sensor 89Y can also be arranged close to the liquid level sensor 89X in the vertical direction. Afterwards, the liquid level height of the liquid level LS detected by the liquid level sensor 89X is set as the "first liquid level height", the liquid level height of the liquid level LS detected by the liquid level sensor 89Y is set as the "second liquid level height", and the liquid level height of the liquid level LS detected by the liquid level sensor 89Z is set as the "third liquid level height".

[0115] The reservoir 61B includes a container portion 81, a liquid ejection path 85, a gas ejection path 86, a degassing path 87, a liquid delivery path 88, and a plurality of (here, three) liquid level sensors 89X, 89Y, and 89Z. Since the reservoir 61B is configured similarly to the reservoir 61A, a detailed description of the reservoir 61B is omitted. In addition, the liquid ejection path 85 of the reservoir 61B is connected to the second portion 77B of the supply pipe 75 included in the liquid supply portion 70. In addition, the gas ejection path 86 of the reservoir 61B is connected to the pressurizing pipe 54B included in the pressurizing portion 50. Moreover, the liquid delivery path 88 is connected to the first portion 43b of the liquid delivery pipe 43.

[0116] For the storage tanks 61A and 61B having the above structure, the liquid outlet 85c for ejecting the processing liquid and the gas outlet 86c for ejecting the gas are located at approximately the same height. The liquid outlet 85c and the gas outlet 86c are arranged at a position higher than the first liquid level detected by the liquid level sensor 89X. For example, the liquid outlet 85c and the gas outlet 86c are arranged at a position higher than the liquid level sensor 89X. The direction in which the end of the internal ejection path 85b including the liquid outlet 85c extends and the direction in which the end of the internal ejection path 86b including the gas outlet 86c extends are approximately consistent with each other. Both the processing liquid from the liquid outlet 85c and the gas from the gas outlet 86c are ejected in an oblique downward direction. When viewed from the vertical direction, the ejection direction (direction) of the processing liquid ejected from the liquid outlet 85c and the ejection direction (direction) of the gas ejected from the gas outlet 86c are approximately the same as each other (in the paper of Figure 6 (b) the direction is from left to right).

[0117] The configuration of the liquid ejection path 85 and the gas ejection path 86 at the storage tanks 61A and 61B is described. In the example shown in FIG. 6( b), when viewed from the vertical direction, the positions of the liquid ejection port 85c and the gas ejection port 86c in the direction in which the liquid ejection path 85 (gas ejection path 86) extend are substantially the same. When viewed from the vertical direction, the outer corner of the top end (liquid ejection port 85c) of the internal ejection path 85b is connected to the inner surface of the side wall 83. The treatment liquid ejected from the liquid ejection port 85c into the internal space S hits the inner surface of the side wall 83. Specifically, the treatment liquid ejected from the liquid ejection port 85c hits the portion of the inner surface of the side wall 83 that is above the first liquid level. In addition, the pressure in the tank box 71 when the treatment liquid is replenished to the storage tank is adjusted to such an extent that the treatment liquid ejected from the liquid ejection port 85c hits the above-mentioned portion of the side wall 83.

[0118] When viewed from the vertical direction, the outer corner of the top end (gas outlet 86c) of the internal ejection path 86b is connected to the inner surface of the side wall 83. The gas ejected from the gas outlet 86c to the internal space S hits the inner surface of the container portion 81. Specifically, the gas ejected from the gas outlet 86c hits the portion of the inner surface of the container portion 81 (upper wall 82 and side wall 83) that is above the first liquid level. For example, the gas ejected from the gas ejection path 86 hits the portion of the inner surface of the side wall 83 that is above the first liquid level, similarly to the liquid ejection path 85. In addition, the gas ejected from the gas ejection path 86c is regulated by the pressure regulating valve 52 to a degree that the gas hits the above-mentioned portion of the container portion 81.

[0119] As shown in FIG6(b), when viewed from the vertical direction, the imaginary line L1 extending along the extension direction of the end of the internal ejection path 85b of the liquid ejection path 85 including the liquid ejection port 85c is not orthogonal to the inner surface of the side wall 83. Therefore, the processing liquid ejected from the liquid ejection port 85c turns along the inner surface of the side wall 83 and flows toward the liquid surface LS. The imaginary line L2 extending along the extension direction of the end of the internal ejection path 86b of the gas ejection path 86 including the gas ejection port 86c is not orthogonal to the inner surface of the side wall 83. Therefore, the gas ejected from the gas ejection port 86c turns and flows along the inner surface of the side wall 83. In addition, when viewed from the vertical direction, the liquid ejection port 85c and the gas ejection port 86c are opposite to each other across the center CP in the container portion 81. The center CP in the container portion 81 is composed of the center position of the area surrounded by the side wall 83 in the cross section orthogonal to the vertical direction, and extends in the vertical direction. In this way, the liquid ejection port 85c and the gas ejection port 86c are respectively located in two regions divided by a plane including the center CP.

[0120] (Control device)

[0121] The control device 100 controls the coating and developing device 2 partially or entirely. The control device 100 is composed of one or more control computers. For example, the control device 100 has a circuit composed of one or more processors, memory, storage, timer and input / output ports. The storage has a storage medium such as a hard disk that can be read by a computer. The storage medium stores a program for causing the control device 100 to execute the steps of using the storage discussed later. The storage medium can also be a non-volatile semiconductor memory, a magnetic disk, an optical disk, etc. that can be taken out. The memory temporarily stores the program loaded from the storage medium of the storage and the calculation results generated by the processor. The processor cooperates with the memory to execute the above program. The timer measures the elapsed time by counting, for example, a reference pulse of a certain period. The input / output port inputs and outputs electrical signals with the unit or device of the control object according to the instructions from the processor.

[0122] [How to use the storage container]

[0123] Next, refer to Figure 7 and Figure 8 An example of the procedure (method of use) of the storage devices 61A and 61B will be described. Figure 7 A timing chart showing an example of various operations of the liquid supply unit 30 is shown in FIG. 1 as a procedure for using the reservoirs 61A and 61B. Figure 7 In the example, "storage 1" indicates storage 61A, and "storage 2" indicates storage 61B. Figure 72 shows various operations of the storage devices 61A and 61B in different periods T1 to T5. Figure 7 In the example shown, any one of the nozzles 22 performs the first ejection during the period T1, the second ejection during the period T2, the third ejection during the period T3, and the fourth ejection during the period T4. The timing and number of ejections from the nozzle 22 are not limited to Figure 7 Example shown.

[0124] In addition, Figure 7 In the figure, "tank pressure" indicates the time when the tank 71 is pressurized (valve 57 is open) in order to replenish the treatment liquid from the liquid supply unit 70 to any of the reservoirs 61A and 61B. "Reservoir 1 pressure" and "Reservoir 2 pressure" indicate the time when the reservoirs 61A and 61B are pressurized (valves 55A and 55B are open). "Reservoir 1 release" and "Reservoir 2 release" indicate the time when the pressure in the reservoirs 61A and 61B is released (valves 63A and 63B are open). "Reservoir 1 in" and "Reservoir 2 in" indicate the time when the treatment liquid is supplied (discharged) to the reservoirs 61A and 61B (valves 78A and 78B are open). "Reservoir 1 out" and "Reservoir 2 out" indicate the time when the treatment liquid can be sent out from the reservoirs 61A and 61B (valves 42A and 42B are open). “Supply” indicates the timing at which the processing liquid is ejected from any nozzle 22 toward the wafer W (when any of the valves 47A, 47B, and 47C is open).

[0125] Moreover, in Figure 7 1 shows the transition of the detection results of the liquid level sensors 89X, 89Y, and 89Z indicating the remaining amount of the processing liquid in the reservoirs 61A and 61B. "Reservoir 1H" and "Reservoir 2H" respectively indicate the time when the liquid level LS detected by the liquid level sensor 89X of the reservoirs 61A and 61B reaches the first liquid level height. "Reservoir 1L" and "Reservoir 2L" respectively indicate the time when the liquid level LS detected by the liquid level sensor 89Y of the reservoirs 61A and 61B reaches the second liquid level height. "Reservoir 1LL" and "Reservoir 2LL" respectively indicate the time when the liquid level LS detected by the liquid level sensor 89Z of the reservoirs 61A and 61B reaches the third liquid level height.

[0126] In the present embodiment, the control device 100 controls the liquid supply unit 30 so as to supply the treatment liquid contained in any one of the reservoirs 61A and 61B to the nozzle 22. In addition, the control device 100 controls the liquid supply unit 30 so as to start replenishing the treatment liquid from the liquid replenishing unit 70 to any one of the reservoirs 61A and 61B when the liquid level LS decreases to a predetermined position (for example, the second liquid level height detected by the liquid level sensor 89Y). The control device 100 controls the liquid supply unit 30 so as to supply the treatment liquid from the reservoir that is not the replenishment target (the other reservoir) to the nozzle 22 at the time of starting replenishment of the treatment liquid to any one of the reservoirs 61A and 61B.

[0127] If using Figure 7 Specifically, during the period T1, the processing liquid is supplied from the reservoir 61A to the nozzle 22 (the processing liquid in the reservoir 61A is used for substrate processing), and the processing liquid is not supplied from the reservoir 61B. At this time, for both the reservoirs 61A and 61B, the pressurized state of the reservoirs by the pressurizing unit 50 continues. During the period T1, the processing liquid is ejected from any nozzle 22 toward the wafer W (the first ejection), and the liquid level LS is lower than the second liquid level due to the decrease in the processing liquid in the reservoir 61A.

[0128] During the period T2, if the control device 100 detects that the liquid level LS in the reservoir 61A is lower than the second liquid level height, the supply source of the processing liquid sprayed from the nozzle 22 is switched from the reservoir 61A to the reservoir 61B. Specifically, the control device 100 controls so that the processing liquid is replenished into the reservoir 61A and the processing liquid can be sprayed toward the wafer W using the processing liquid from the reservoir 61B. Time t1 indicates the time when the switching of the reservoir is started. When the reservoir is switched, the control device 100 sets the pressure in the reservoir 61A to a released state (opens the valve 63A) before starting to replenish the processing liquid into the reservoir 61A. Thereby, the backflow of the processing liquid caused by the pressure in the reservoir 61A being higher than the pressure in the tank 71 is prevented. In addition, after the replenishment of the processing liquid into the reservoir 61A is completed (after time t2), the control device 100 controls the liquid supply unit 30 so that the pressure in the reservoir 61A gradually increases. Figure 7 In the timing diagram shown in FIG. 1 , the inclined rise in the last stage of period T2 of the timing diagram represented by “reservoir 1 pressure” indicates that the pressure in reservoir 61A is gradually increased. When the processing liquid is ejected from nozzle 22 toward wafer W during period T2 (when the second ejection is performed), the processing liquid in reservoir 61B is used.

[0129] Here, use Figure 8An example of a replenishment step (replenishment process) for replenishing the reservoir during period T2 is described in detail with reference to the flowchart of . First, the control device 100 determines whether it is necessary to replenish the processing liquid to the reservoir 61A (step S01). For example, in step S01, the control device 100 waits until the processing liquid in the reservoir 61A is lower than the reference liquid level. The reference liquid level can be pre-set by the operator as the time to start replenishing the processing liquid to the reservoir 61A. For example, the control device 100 may detect that the liquid level LS is lower than the second liquid level by using the liquid level sensors 89X, 89Y, 89Z in the reservoir 61A, thereby determining that the processing liquid in the reservoir 61A is lower than the reference liquid level (step S01: yes).

[0130] Next, the control device 100 controls so that the processing liquid can be supplied from the reservoir 61B to the nozzle 22 (step S02). In step S02, the control device 100 switches the valve 42B from a closed state to an open state. In addition, the control device 100 controls so that the processing liquid cannot be supplied from the reservoir 61A to the nozzle 22 (step S03). In step S03, the control device 100 switches the valve 42A from an open state to a closed state. By executing steps S02 and S03, the supply source of the processing liquid sprayed to the wafer W is switched from the reservoir 61A to the reservoir 61B. In addition, the control device 100 sets the valve 57 to an open state in accordance with the processing of steps S02 and S03, thereby pressurizing the tank box 71.

[0131] Next, the control device 100 performs control so that the pressurization in the reservoir 61A is released (step S04). In step S04, the control device 100 switches the valve 63A from the closed state to the open state. As a result, the pressure in the reservoir 61A is released.

[0132] Next, the control device 100 controls so as to supply (replenish) the treatment liquid into the reservoir 61A (step S05). In step S05, the control device 100 controls the supply of the treatment liquid into the reservoir 61A. Specifically, first, the control device 100 switches the valve 78A from a closed state to an open state (opens the valve 78A), thereby starting the supply of the treatment liquid into the reservoir 61A. In other words, the control device 100 controls so as to spray the treatment liquid into the container portion 81 via the liquid spray path 85 in the reservoir 61A. If the control device 100 detects that the liquid level LS of the treatment liquid in the reservoir 61A reaches the first liquid level height, the supply of the treatment liquid into the reservoir 61A is stopped. Specifically, the valve 78A and the valve 63A are switched from an open state to a closed state (the valves 78A and 63A are closed). Furthermore, the control device 100 closes the valve 57 in response to the stop of the supply of the treatment liquid, thereby releasing the pressurization in the tank 71 .

[0133] Next, the control device 100 controls so that the reservoir 61A is pressurized (steps S06 and S07). In step S06, the control device 100 controls to start pressurizing the reservoir 61A. In other words, the control device 100 starts to control the reservoir 61A to eject gas into the container portion 81 via the gas ejection path 86. In step S07, the control device 100 continues the increase in pressure until the reservoir 61A reaches a predetermined pressure. For example, the control device 100 switches the valve 55A from a closed state to an open state (opens the valve 55A), and gradually increases the pressure in the reservoir 61A by using the pressure regulating valve 52. Alternatively, the control device 100 gradually switches the valve 55A from a closed state to an open state while the pressure setting value is maintained at a constant value by the pressure regulating valve 52, thereby gradually increasing the pressure in the reservoir 61A. The control device 100 may continue to increase the pressure in the reservoir 61A until the setting value of the pressure regulating valve 52 reaches a predetermined value, or may continue to increase the pressure in the reservoir 61A until the valve 55A is completely opened. By increasing the pressure in the reservoir 61A to a predetermined pressure, the replenishment process of replenishing the reservoir 61A is completed.

[0134] return Figure 7 During the period T3, the processing liquid is supplied from the reservoir 61B to the nozzle 22 (the processing liquid in the reservoir 61B is used for substrate processing), and the processing liquid is not supplied from the reservoir 61A. During this period T3, the processing liquid in the reservoir 61A is not used for substrate processing, but the pressurized state in the reservoir 61A continues. During the period T3, the processing liquid is ejected from any nozzle 22 toward the wafer W (the third ejection), and due to the reduction of the processing liquid in the reservoir 61B, the liquid level LS is lower than the second liquid level height.

[0135] If the control device 100 detects that the liquid level LS is lower than the second liquid level height, the control device 100 switches from the reservoir 61B to the reservoir 61A (time t3). That is, the control device 100 performs a replenishment process for replenishing the reservoir 61B during the period T4. The replenishment of the processing liquid to the reservoir 61B is performed in the same manner as the replenishment of the processing liquid to the reservoir 61A. At time t4 during the period T4, when the pressurization in the reservoir 61B is started, the control device 100 gradually increases the pressure in the reservoir 61B. During the period T4, the processing liquid in the reservoir 61A is used for the ejection of the processing liquid from any nozzle 22 toward the wafer W (the fourth ejection).

[0136] After the processing liquid is replenished in the reservoir 61B, in the period T5, the processing liquid is supplied from the reservoir 61A to the nozzle 22 (the processing liquid in the reservoir 61A is used for substrate processing), and the reservoir 61B becomes pressurized, but the processing liquid is not supplied from the reservoir 61B. That is, the processing in the period T5 is the same as the processing in the period T1. Thereafter, the same processing as the processing in the periods T2 to T4 is repeated.

[0137] [effect]

[0138] For the reservoirs 61A and 61B included in the coating and developing device 2 of the above embodiment, the processing liquid ejected from the liquid ejection port 85c hits a portion of the inner surface of the side wall 83 of the container portion 81 that is above the liquid level LS. In addition, the gas ejected from the gas ejection port 86c hits a portion of the inner surface of the container portion 81 that is above the liquid level LS. Therefore, the ejected processing liquid and gas are supplied to the container portion 81 in a manner that does not directly hit the liquid level LS of the processing liquid already contained in the container portion 81. Thus, the foaming of the processing liquid caused by the processing liquid and the gas directly hitting the liquid level LS is suppressed. As a result, for the liquid supply portion 30 including the reservoirs 61A and 61B, it is possible to prevent the processing liquid containing bubbles from flowing downstream of the reservoirs 61A and 61B, and therefore, it is possible to prevent the processing liquid containing bubbles from being supplied to the wafer W.

[0139] As a storage device for temporarily storing the treatment liquid, a storage device constructed in a manner of spraying the treatment liquid and gas downward into the container portion along the vertical direction is conceivable. In this structure, the sprayed treatment liquid and gas directly hit the liquid surface of the treatment liquid already contained in the container portion. In this case, a physically strong force is applied to the treatment liquid in the container portion, and foaming is likely to occur. In contrast, in the storage devices 61A and 61B, the sprayed treatment liquid and gas do not directly hit the liquid surface of the treatment liquid as described above, so the force applied to the treatment liquid in the container portion 81 is weakened, and the foaming of the treatment liquid in the container portion is suppressed. In addition, by using the liquid supply portion 30 equipped with the storage devices 61A and 61B to supply the treatment liquid to the nozzle 22, it is possible to construct a supply system separately from other supply systems that supply the treatment liquid to the nozzle using a pump or the like.

[0140] In the above embodiment, the extension direction of the end of the liquid ejection path 85 including the liquid ejection port 85c is inclined relative to the vertical direction. In this case, compared with the case where the processing liquid is ejected downward along the vertical direction, the component of the flow rate of the processing liquid along the vertical direction is reduced. Therefore, when the processing liquid supplied from the liquid ejection path 85 hits the processing liquid already contained in the container, the force acting downward along the vertical direction can be reduced, thereby more reliably suppressing the foaming of the processing liquid caused by the ejection of the processing liquid. In addition, in the above embodiment, the extension direction of the end of the gas ejection path 86 including the gas ejection port 86c is inclined relative to the vertical direction. In this case, compared with the case where the gas is ejected downward along the vertical direction, the component of the flow rate of the gas along the vertical direction is reduced, thereby more reliably suppressing the foaming of the processing liquid caused by the ejection of the gas.

[0141] In the above embodiment, the cross section of the inner surface of the side wall 83 is circular in a plane intersecting the vertical direction. In addition, when viewed from the vertical direction, the extension direction of the end of the liquid ejection path 85 including the liquid ejection port 85c and the extension direction of the end of the gas ejection path 86 including the gas ejection port 86c are not orthogonal to the inner surface of the side wall 83. By having such a structure, the processing liquid ejected from the liquid ejection port 85c and the gas ejected from the gas ejection port 86c both rotate along the inner surface of the side wall 83 and move in the internal space S. Therefore, the ejected processing liquid and gas are more reliably prevented from directly hitting the liquid surface LS of the processing liquid contained in the container portion 81. As a result, the foaming of the processing liquid caused by the processing liquid and gas directly hitting the liquid surface LS is more reliably suppressed.

[0142] In the above embodiment, when viewed from the vertical direction, the liquid ejection port 85c and the gas ejection port 86c are opposite to each other across the center CP in the container portion 81. In this case, the processing liquid ejected from the liquid ejection port 85c is supplied into the container portion 81 in a manner that does not hit the gas ejection path 86 including the gas ejection port 86c. As a result, it is possible to prevent the processing liquid from being ejected from the liquid ejection port 85c from hitting other components before reaching the processing liquid in the container portion 81, thereby preventing the processing liquid from being foamed.

[0143] In the above embodiment, the storage tanks 61A and 61B are provided with a plurality of liquid level sensors 89X, 89Y, and 89Z for respectively detecting the situation that the height of the liquid surface LS reaches a predetermined position (a first liquid surface height, a second liquid surface height, and a third liquid surface height). The predetermined positions at which the plurality of liquid level sensors 89X, 89Y, and 89Z respectively detect the liquid surface height are lower than the position at which the liquid outlet 85c, the gas outlet 86c, the processing liquid ejected from the liquid outlet 85c hits the side wall 83, and the gas ejected from the gas outlet 86c hits the container portion 81. In this case, for example, by setting so that the processing liquid is contained until the first liquid surface height, it is possible to more reliably prevent the gas and processing liquid ejected into the container portion 81 from directly hitting the liquid surface LS at the liquid surface height of the processing liquid in the container portion 81.

[0144] In the above embodiment, the coating and developing device 2 is provided with the control device 100 for controlling the liquid supply unit 30. The liquid supply unit 30 includes: a pressurizing pipe 53 for supplying gas to the reservoirs 61A and 61B via the gas ejection path 86; and a pressure regulating unit (for example, a pressure regulating valve 52) provided in the pressurizing pipe 53 for regulating the pressure formed by the gas in the container unit 81. The control device 100 controls the pressure regulating unit so that the pressure in the container unit 81 gradually increases when the pressure in the container unit 81 is pressurized from the state where the pressure is released. In this case, the processing liquid contained in the reservoirs 61A and 61B is pressurized in stages, so that the foaming of the processing liquid when the pressure is applied can be prevented.

[0145] The embodiments disclosed above should be considered in all respects as illustrative and non-restrictive. The embodiments disclosed above may be omitted, replaced, and modified in various forms without departing from the appended claims and the gist thereof.

[0146] [Modifications]

[0147] (Variation 1 of the method of using the storage device)

[0148] Reference Fig. 9 Next, a modification example related to the method of using the storage containers 61A and 61B will be described. Fig. 9 , a defoaming step for bubbles attached to the inner surface of the side wall 83 of the container portion 81 is shown as a method of using the reservoir of Modification 1. As bubbles attached to the side wall 83, for example, bubbles of the processing liquid generated in the container portion 81, or bubbles of the processing liquid generated in the reservoir or piping upstream of the reservoirs 61A and 61B can be cited.

[0149] In the defoaming step of the modification 1, the control device 100 discharges the gas in the container part 81 from the degassing path 87 (discharge part), and discharges the gas from the gas discharge port 86c so that the gas hits the portion of the inner surface of the side wall 83 above the liquid surface LS. At this time, the control device 100 keeps the valves 63A and 63B open while the valves 78A and 78B are closed, and discharges the gas into the reservoirs 61A and 61B (container part 81) at a relatively weak pressure (e.g., 10 kPa to 20 kPa). Due to the discharge of the gas, the airflow FG that turns and flows along the inner surface of the side wall 83 is generated in the container part 81. As a result, the bubbles B attached to the portion of the side wall 83 above the liquid surface LS are discharged through the degassing path 87 (degassing tubes 66A and 66B) together with the airflow FG, or are broken by the airflow FG, and the bubbles B are removed. The degassing port of the degassing path 87 may also be provided at the center of the region surrounded by the side walls 83 in a plan view, that is, at the center of the upper wall 82. In this case, the upward gas flow discharged from the degassing path 87 is formed at the center of the reservoirs 61A, 61B in a plan view, and is unlikely to interfere with the air flow FG. Therefore, the air flow FG is easily formed in a rectified state along the side walls 83, and the bubbles B are more reliably removed by the air flow FG.

[0150] In the method of using the reservoir, when the processing liquid in the container portion 81 decreases, even if bubbles remain on the inner surface of the side wall 83, an air flow FG formed by gas jetting is generated in the container portion 81, and the bubbles remaining on the inner surface of the side wall 83 can be discharged. That is, the bubbles in the reservoirs 61A and 61B can be eliminated.

[0151] (Variation 2 of the method of using the storage device)

[0152] Reference Figure 10(a) to Figure 10(d) ,and Fig.11 As a method of using a tank according to modification 2, the steps of using the tank are described when the tank 71 as a replenishment source of the processing liquid needs to be replenished during the replenishment process of the processing liquid to the tank 61A.

[0153] FIG. 10( a ) schematically shows a state in which the treatment liquid is filled to the first liquid level in both the reservoirs 61A and 61B. If the treatment liquid in the reservoir 61A is used and the liquid level LS of the treatment liquid in the reservoir 61A is lower than the second liquid level (see FIG. 10( b )), the control device 100 starts a replenishment process for replenishing the reservoir 61A (step S11). During the replenishment process in the reservoir 61A, if it is determined that the treatment liquid in the tank 71 needs to be replenished (step S12: Yes), replenishment to the tank 71 starts (step S13). With the start of replenishment of the treatment liquid in the tank 71, the control device 100 stops the replenishment process of the treatment liquid in the reservoir 61A. In addition, during the period in which it is determined that the replenishment of the treatment liquid in the tank 71 is not necessary (step S12: No), the replenishment process in the reservoir 61A is continued.

[0154] During the period of replenishing the treatment liquid to the tank 71, the control device 100 performs control corresponding to the following steps S14 to S16. In step S14, the control device 100 controls the liquid supply unit 30 so as to use up the treatment liquid in the reservoir 61B. For example, the control device 100 continues to supply the treatment liquid from the reservoir 61B to the nozzle 22 until the liquid level LS of the treatment liquid in the reservoir 61B is lower than the third liquid level height.

[0155] After all the processing liquid in the reservoir 61B is used up (refer to FIG. 10( c )), the control device 100 switches the supply source of the processing liquid for substrate processing from the reservoir 61B to the reservoir 61A (step S15). In addition, at this time, the liquid level LS of the processing liquid in the reservoir 61A is already lower than the second liquid level height. Then, the control device 100 controls the liquid supply unit 30 so as to use up the processing liquid in the reservoir 61A (step S16). For example, the control device 100 continuously supplies the processing liquid from the reservoir 61A to the nozzle 22 until the liquid level LS of the processing liquid in the reservoir 61A is lower than the third liquid level height.

[0156] After all the treatment liquids in the reservoirs 61A and 61B are used up (see FIG. 10( d )), the control device 100 temporarily interrupts the coating process by the coating unit U1 until the treatment liquid is replenished to the tank 71. After the treatment liquid is replenished to the tank 71 and the treatment liquid is replenished to at least one of the reservoirs 61A and 61B, the control device 100 restarts the coating process by the coating unit U1.

[0157] In the method of using the reservoir, the processing liquid is used up in both the reservoirs 61A and 61B while the tank 71 is being replenished with the processing liquid. If the tank 71 is replenished with the processing liquid and the processing liquid is left in either the reservoir 61A or the reservoir 61B while the tank 71 is being replenished, the gas in the reservoir may be excessively dissolved in the processing liquid in the container 81. In contrast, in the above method of use, the processing liquid is used up in both the reservoirs 61A and 61B while the processing liquid is left in the tank 71 while the tank 71 is being replenished. Therefore, the processing liquid in which the gas is excessively dissolved is prevented from being supplied to the nozzle 22 after the waiting period.

[0158] (Variation of the storage container)

[0159] Reference Fig.12 The following describes a modification of the liquid ejection path 85 and the gas ejection path 86 of the reservoirs 61A and 61B. The liquid ejection path 85 and the gas ejection path 86 of the reservoirs 61A and 61B may also be modified as follows. Fig.12 As shown in other example 1 to other example 5, the internal ejection path 86b (gas ejection port 86c) of the gas ejection path 86 may be arranged at a position higher than the internal ejection path 85b (liquid ejection port 85c) of the liquid ejection path 85. In this case, the gas supplied from the gas ejection path 86 hits the side wall 83 at a position higher than the processing liquid supplied from the liquid ejection path 85, thereby removing the liquid or bubbles attached to the side wall 83. As a result, the processing liquid ejected from the liquid ejection path 85 can be prevented from being attached to the internal ejection path 86b.

[0160] As shown in other example 2, on the basis of the same top and bottom configuration as other example 1, both the internal ejection path 85b and the gas ejection port 86c may be close to one side surface of the side wall 83. In other words, both the liquid ejection port 85c and the gas ejection port 86c may be located in one of two regions (hereinafter referred to as "divided regions") divided by a plane (a plane extending in the vertical direction) including the center CP (see FIG. 6(b)).

[0161] As shown in other example 3, the extension direction of the end of the liquid ejection path 85 including the liquid ejection port 85c (hereinafter referred to as the "first extension direction") and the extension direction of the end of the gas ejection path 86 including the gas ejection port 86c (hereinafter referred to as the "second extension direction") may also be inclined at different angles relative to the horizontal direction. As an example, the inclination angle of the first extension direction relative to the horizontal direction may also be greater than the inclination angle of the second extension direction relative to the horizontal direction. In this case, a swirling flow of the processing liquid ejected from the liquid ejection port 85c along the inner surface of the side wall 83 can be preferentially formed. In addition, the second extension direction may also be along the horizontal direction.

[0162] As shown in other examples 4 and other examples 5, the ejection direction (orientation) of the processing liquid ejected from the liquid ejection path 85 and the ejection direction (orientation) of the gas ejected from the gas ejection path 86 may be opposite to each other. In this case, as in other example 4, both the internal ejection path 85b and the internal ejection path 86b may be arranged in one of the divided areas. Alternatively, as in other example 5, the internal ejection path 85b and the internal ejection path 86b may also be arranged in two divided areas, respectively. In the structure shown in other example 5, as in the structure shown in other example 1 above, the processing liquid ejected from the liquid ejection path 85 can be prevented from adhering to the internal ejection path 86b.

[0163] (Other Modifications)

[0164] Various deformations can also be made to the parts other than those mentioned above. For example, the ejection direction (orientation) of the gas ejected from the gas outlet 86c is not limited to the horizontal direction or the oblique downward direction. The ejection direction (orientation) of the gas can be either upward or obliquely upward. For example, the internal ejection path 86b can also extend in a manner that is located above as it moves toward the gas outlet 86c. In addition, the configuration of the liquid ejection path 85 and the gas ejection path 86 can be appropriately changed within a range in which the processing liquid ejected from the liquid ejection port 85c and the gas ejected from the gas ejection port 86c can hit the portion of the inner surface of the side wall 83 of the container portion 81 that is above the liquid level LS as described above.

[0165] A modified example of a reservoir 61C will be described with reference to Fig. 13(a) and Fig. 13(b). Fig. 13(a) schematically illustrates a cross-sectional structure of the reservoir 61C when viewed from the side, and Fig. 13(b) schematically illustrates a cross-sectional structure of the reservoir 61C when viewed from above. The reservoir 61C differs from the reservoirs 61A and 61B in that the reservoir 61C has a side wall 83C instead of the side wall 83 and that the liquid ejection path 85 has an ejection portion 85d and a delivery portion 85e.

[0166] At least a portion of the side wall 83C is inclined relative to the vertical direction. The side wall 83C may be inclined relative to the vertical direction as a whole, or a portion of the side wall 83C located below the liquid ejection port 85c may be inclined relative to the vertical direction. The side wall 83C may have an inner surface that is inclined relative to the vertical direction in such a manner that the treatment liquid ejected from the liquid ejection port 85c flows along the inner surface of the side wall 83 toward the liquid surface LS. In the example shown in FIG. 13(a) and FIG. 13(b), the inner surface of the side wall 83C is inclined relative to the vertical direction in such a manner that the center CP of the container portion 81 including the side wall 83C moves away from the liquid ejection port 85c as it moves downward. In addition, the position (direction) at which the center CP moves as it moves downward is not limited to this example, and may also change according to the position hit by the treatment liquid ejected from the liquid ejection port 85c.

[0167] The side wall 83C has an inclined surface 91a and an inclined surface 91b. The inclined surface 91a is a portion of the inner surface of the side wall 83C that is exposed upward (visible when viewed from a vertical direction) when the upper wall 82 is removed. As shown in FIG. 13(a), the angle of the inclined surface 91a relative to the horizontal plane is smaller than 90°. The inclined surface 91b is a portion of the inner surface of the side wall 83C that is not exposed upward (not visible when viewed from a vertical direction) even if the upper wall 82 is removed. As shown in FIG. 13(a), the angle of the inclined surface 91b relative to the horizontal plane is larger than 90°. For example, the processing liquid ejected from the liquid ejection port 85c hits the inclined surface 91a, and turns and flows along the inner surface of the side wall 83C including the inclined surfaces 91a and 91b. Alternatively, the processing liquid ejected from the liquid ejection port 85c hits the inclined surface 91a, and flows obliquely downward along the inclined surface 91a. In addition, when the processing liquid flows obliquely downward along the inclined surface 91a, the liquid outlet 85c may be arranged at a position corresponding to the portion of the inclined surface 91a where the inclination angle is the gentlest (the angle is smaller relative to the horizontal plane) (refer to the liquid outlet path 85 represented by the dotted line in Figure 13(b)).

[0168] In the reservoir 61C, the flow rate of the processing liquid ejected from the liquid ejection port 85c and flowing along the side wall 83C can be made gentler than when the processing liquid flows along the side wall 83 extending in the vertical direction. Therefore, when the processing liquid flowing along the inner surface of the side wall 83C reaches the liquid surface LS, the vertical downward component of the flow rate of the processing liquid becomes smaller. As a result, the foaming of the processing liquid caused by the processing liquid hitting the liquid surface LS along the inner surface of the side wall 83C can be suppressed.

[0169] In the examples shown in Figures 13(a) and 13(b), at each height position, the cross-sectional area on the horizontal plane of the area surrounded by the inner surface of the side wall 83C is approximately constant. In this structure, it is easier to manage the amount of processing liquid in the storage container 61C and control the pressure applied to the liquid surface LS by the gas. Alternatively, the side wall 83C may have an inclined surface 91a, and a portion of the side wall 83C corresponding to the inclined surface 91b is not inclined relative to the vertical direction. In this case, the cross-sectional area on the horizontal plane of the area surrounded by the inner surface of the side wall 83C becomes smaller as it goes downward. In this structure, as the liquid level LS decreases, the area of ​​the processing liquid (liquid surface LS) in contact with the gas decreases, thereby suppressing the dissolution of the gas.

[0170] The ejection portion 85d is a portion of the liquid ejection path 85 that includes the liquid ejection port 85c, and the delivery portion 85e is a portion of the liquid ejection path 85 that delivers the treatment liquid to the ejection portion 85d. The cross-sectional area (flow path cross-sectional area) of the ejection portion 85d that is orthogonal to the direction in which the treatment liquid flows is larger than the cross-sectional area (flow path cross-sectional area) of the delivery portion 85e that is orthogonal to the direction in which the treatment liquid flows. For example, the diameter of the ejection portion 85d (more specifically, the diameter of the flow path formed by the ejection portion 85d) is larger than the diameter of the delivery portion 85e (more specifically, the diameter of the flow path formed by the delivery portion 85e). The diameter of the ejection portion 85d may be substantially constant or may gradually increase as it moves toward the liquid ejection port 85c.

[0171] In this structure, the difference between the pressure applied to the treatment liquid just before it is ejected into the reservoir and the pressure applied to the treatment liquid just after it is ejected becomes smaller. Therefore, it is possible to suppress the destruction of the characteristics of the liquid (disruption of the ejection state) caused by the release of the pressure applied to the treatment liquid just after the treatment liquid is ejected into the reservoir. In addition, the ejection portion 85d may also be inclined downward toward the liquid ejection port 85c. In this case, the treatment liquid is prevented from being retained in the liquid ejection path 85 (ejection portion 85d).

[0172] In addition, a structure of a reservoir in which a liquid outlet is provided at a position lower than the uppermost position of the liquid surface LS is also conceivable. For example, for this reservoir, the liquid outlet may also be arranged at a position corresponding to the liquid level sensor 89X and the liquid level sensor 89Y of the reservoir 61A, etc. Since the treatment liquid may generate droplets when the liquid surface LS is below the liquid outlet, there is a concern that the droplets may adhere to the inner surface of the side wall 83. However, for the reservoir of the above structure, when the liquid surface LS is higher than the liquid outlet, the droplets can be recovered. In addition, for the reservoirs 61A to 61C, when the reservoir is used, the liquid outlet 85c may be located at a position higher than the liquid surface LS, and when the reservoir is maintained, the treatment liquid (cleaning liquid) is added to the reservoir until the liquid surface is above the liquid outlet 85c.

[0173] As a method of pressurizing the reservoirs 61A and 61B with nitrogen gas, a diaphragm may be used in combination with the supply of gas into the container portion 81 as in the above-described embodiment, or the reservoirs 61A and 61B may be pressurized instead of the supply of gas. The diaphragm may be filled with nitrogen gas.

[0174] The substrate to be processed is not limited to a semiconductor wafer, and may be, for example, a glass substrate, a mask substrate, an FPD (Flat Panel Display), or the like.

[0175] The structures of the various parts of the liquid supply unit 30 described in the above embodiment can be appropriately changed. For example, the following structure is described: two liquid supply units 60A and 60B are provided in the pressure delivery unit 32 that supplies liquid to the plurality of nozzles 22, and the two liquid supply units 60A and 60B are provided with reservoirs 61A and 61B, respectively, but the liquid supply units 60A and 60B may be one or three or more. In addition, the reservoirs 61A and 61B may have different structures. Moreover, only one of the reservoirs 61A and 61B may have the structure described above.

Claims

1. A storage container, characterized in that: The storage container has: A container portion having an upper wall, a side wall and a bottom wall, and containing a treatment liquid therein; a liquid ejection path having a liquid ejection port disposed at a position higher than a liquid level of the processing liquid contained in the container portion and capable of ejecting the processing liquid into the container portion; as well as a gas ejection path having a gas ejection port disposed at a position higher than the liquid surface and capable of ejecting gas into the container portion, The liquid ejection path is capable of ejecting the processing liquid from the liquid ejection port in such a manner that the processing liquid hits a portion of the inner surface of the side wall that is above the liquid surface. The gas ejection path is capable of ejecting the gas from the gas ejection port so that the gas hits a portion of the inner surface of the container portion that is above the liquid surface. When viewed from a vertical direction, the liquid ejection port and the gas ejection port are opposed to each other across the center of the container portion.

2. The storage container according to claim 1, characterized in that An extending direction of an end portion of the liquid ejection path including the liquid ejection port is inclined with respect to a vertical direction.

3. The storage container according to claim 2, characterized in that In a plane intersecting the vertical direction, the cross section of the inner surface of the side wall is circular. When viewed from a vertical direction, an imaginary line extending along the extension direction of the liquid ejection path including the end of the liquid ejection port and an imaginary line extending along the extension direction of the gas ejection path including the end of the gas ejection port are not orthogonal to the inner surface of the side wall.

4. The storage container according to claim 2, characterized in that The storage device further includes a plurality of liquid level detection units for respectively detecting when the height of the liquid level reaches a predetermined position. The predetermined positions detected by each of the plurality of liquid level detection units are lower than the liquid outlet, the gas outlet, the position where the processing liquid ejected from the liquid outlet hits the side wall, and the position where the gas ejected from the gas outlet hits the container unit.

5. The storage container according to claim 1 or 2, characterized in that: At least a portion of the inner surface of the side wall located below the liquid discharge port is inclined with respect to the vertical direction so that the processing liquid flows along the inner surface of the side wall.

6. The storage container according to claim 1 or 2, characterized in that: The liquid ejection path includes: an ejection portion including the liquid ejection port; and a delivery portion that delivers the treatment liquid to the ejection portion. The flow path cross-sectional area of ​​the ejection portion is larger than the flow path cross-sectional area of ​​the delivery portion.

7. A substrate processing device, characterized in that: The substrate processing device comprises: a liquid supply unit having a storage device for temporarily storing a processing liquid used for substrate processing; and a nozzle for ejecting the processing liquid supplied from the liquid supply unit toward a substrate to be processed, The storage container comprises: A container portion having an upper wall, a side wall and a bottom wall, and containing a treatment liquid therein; a liquid ejection path having a liquid ejection port disposed at a position higher than a liquid level of the processing liquid contained in the container portion and capable of ejecting the processing liquid into the container portion; and a gas ejection path having a gas ejection port disposed at a position higher than the liquid surface and capable of ejecting gas into the container portion, The liquid ejection path is capable of ejecting the processing liquid from the liquid ejection port in such a manner that the processing liquid hits a portion of the inner surface of the side wall that is above the liquid surface. The gas ejection path is capable of ejecting the gas from the gas ejection port so that the gas hits a portion of the inner surface of the container portion that is above the liquid surface. When viewed from a vertical direction, the liquid ejection port and the gas ejection port are opposed to each other across the center of the container portion.

8. The substrate processing device according to claim 7, characterized in that: The substrate processing apparatus further comprises a control device for controlling the liquid supply unit. The liquid supply unit further comprises: a gas delivery pipe, which supplies the gas to the storage container via the gas ejection path; and a pressure regulating unit, which is provided on the gas delivery pipe and is used to regulate the pressure formed by the gas in the container unit. The control device controls the pressure regulating unit so as to gradually increase the pressure in the container unit when the inside of the container unit is pressurized from a state in which the pressure is released.

9. A method for using a storage device, the storage device comprising: a container portion having an upper wall, a side wall and a bottom wall, and containing a processing liquid inside; a liquid ejection path having a liquid ejection port arranged at a position higher than a liquid level of the processing liquid contained in the container portion, and capable of ejecting the processing liquid into the container portion; and a gas ejection path having a gas ejection port arranged at a position higher than the liquid level, and capable of ejecting gas into the container portion, characterized in that: The method of using the storage device includes: ejecting the processing liquid from the liquid ejection port so that the processing liquid hits a portion of the inner surface of the side wall that is above the liquid surface; and The gas is ejected from the gas ejection port so that the gas hits a portion of the inner surface of the container portion that is above the liquid surface. When viewed from a vertical direction, the liquid ejection port and the gas ejection port are opposed to each other across the center of the container portion.

10. A method for using a storage device, the storage device comprising: a container portion having an upper wall, a side wall and a bottom wall, and containing a processing liquid inside; a liquid ejection path having a liquid ejection port arranged at a position higher than a liquid level of the processing liquid contained in the container portion, and capable of ejecting the processing liquid into the container portion; a gas ejection path having a gas ejection port arranged at a position higher than the liquid level, and capable of ejecting gas into the container portion; and a discharge portion for discharging the gas in the container portion, characterized in that The method of using the storage device includes: the gas in the container portion is discharged from the discharge portion and ejected from the gas ejection port in such a manner that the gas hits a portion of the inner surface of the side wall above the liquid surface, The gas is ejected from the gas ejection port so that the gas in the container is discharged from the discharge portion provided at the center of the region surrounded by the side wall in a plan view, and a gas flow swirling along the inner surface of the side wall above the liquid surface is generated, When viewed from a vertical direction, the liquid ejection port and the gas ejection port are opposed to each other across the center of the container portion.

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