Camera device

Abstract

An imaging device includes: an effective pixel area, which includes a plurality of imaging elements-A, amplifies signal charges generated by photoelectric conversion and reads the signal charges to a driving circuit; and an optical black area, which includes a plurality of imaging elements-B, surrounds the effective pixel area and outputs optical black used as a reference for a black level. The plurality of imaging elements-A and the plurality of imaging elements-B share a common photoelectric conversion layer (23), and the common photoelectric conversion layer (23) is located outside the optical black area and extends toward an outer edge area surrounding the optical black area. An outer edge electrode (201) is arranged in the outer edge area.

Description

Technical Field

[0001] The present disclosure relates to a camera device. Background Art

[0002] Generally, an image pickup device includes: an effective pixel region that amplifies a signal charge generated by photoelectric conversion and reads the signal charge to a drive circuit; and an optical black region that surrounds the effective pixel region and outputs an optical black used as a reference for a black level. Note that, for convenience, an image pickup element included in the effective pixel region of a conventional image pickup device is referred to as "image pickup element-A", and an image pickup element included in the optical black region is referred to as "image pickup element-B". In addition, in order to prevent highlight blooming in image pickup element-A from affecting image pickup element-B, a dummy image pickup element is provided between image pickup element-B and image pickup element-A in the optical black region.

[0003] Each of the imaging element-A and the imaging element-B includes a photoelectric conversion unit in which a first electrode, a photoelectric conversion layer, and a second electrode are stacked. Here, in the case where the photoelectric conversion layer is formed of an organic semiconductor material, a light shielding film and a buffer film are formed on the light incident side of each imaging element-B so as not to damage the photoelectric conversion layer and not to reduce the image quality. This technology is already known from WO 2014 / 007132 A1.

[0004] Patent Literature List

[0005] Patent Literature

[0006] Patent Document 1: WO 2014 / 007132 A1 Summary of the invention

[0007] Problem that the invention aims to solve

[0008] The technology disclosed in WO 2014 / 007132 A1 effectively relieves film stress on various films provided on the light incident side of the imaging element. On the other hand, in the case where the photoelectric conversion layer is formed of an organic semiconductor material, the edge portion of the photoelectric conversion layer is often damaged during processing of the photoelectric conversion layer, specifically, during patterning. Therefore, the charge generated at the edge portion of the photoelectric conversion layer then enters the imaging element-B and may hinder the function of the optical black area.

[0009] Therefore, an object of the present disclosure is to provide an imaging device having a configuration and structure that does not easily hinder the function of an optical black area.

[0010] Solution to the problem

[0011] A camera device for achieving the above-mentioned object according to a first embodiment of the present disclosure includes:

[0012] an effective pixel region including a plurality of image pickup elements-A, amplifying signal charges generated by photoelectric conversion, and reading the signal charges to a drive circuit; and

[0013] An optical black area, which includes a plurality of imaging elements-B, surrounds the effective pixel area and outputs optical black used as a reference of a black level.

[0014] In the imaging device,

[0015] The photoelectric conversion layer forming the plurality of imaging elements-A and the plurality of imaging elements-B is a common photoelectric conversion layer,

[0016] The common photoelectric conversion layer is located outside the optical black area and extends toward an outer edge area surrounding the optical black area, and

[0017] The outer edge electrode is arranged in the outer edge region.

[0018] A camera device for achieving the above-mentioned object according to a second embodiment of the present disclosure includes:

[0019] an effective pixel region including a plurality of image pickup elements-A, amplifying signal charges generated by photoelectric conversion, and reading the signal charges to a drive circuit;

[0020] an optical black area including a plurality of imaging elements-B, surrounding the effective pixel area, and outputting an optical black used as a reference of a black level; and

[0021] An outer edge area includes a plurality of imaging elements-C and surrounds the optical black area.

[0022] In the imaging device,

[0023] The photoelectric conversion layer forming the plurality of imaging elements-A, the plurality of imaging elements-B, and the plurality of imaging elements-C is a common photoelectric conversion layer, and

[0024] During the operation of the imaging device, the imaging element-C is always in an operating state. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 This is a schematic partial cross-sectional view of the imaging device of Example 1.

[0026] Figure 2 This is a schematic partial cross-sectional view of the imaging device of Example 2.

[0027] Figure 3 This is a schematic partial cross-sectional view of the imaging device of Example 3.

[0028] Figure 4This is a schematic partial cross-sectional view of an imaging device according to a fourth embodiment.

[0029] Figure 5 This is a schematic partial cross-sectional view of the imaging device of Example 5.

[0030] Figure 6 This is a schematic partial cross-sectional view of a modified example of the imaging device of Example 5.

[0031] Figure 7 This is a schematic partial cross-sectional view of the imaging device of Example 6.

[0032] Figure 8 This is a schematic partial cross-sectional view of a modified example of the imaging device of Example 6.

[0033] Fig. 9 This is a schematic partial cross-sectional view of the imaging device of Example 7.

[0034] Fig.10 This is a schematic partial cross-sectional view of a modified example of the imaging device of Example 7.

[0035] Fig.11A and Fig. 11B 1 is a diagram schematically showing the arrangement of components of the imaging device of Embodiment 1 and its modified examples.

[0036] Fig. 12A and Fig. 12B 1 is a diagram schematically showing the arrangement of components of the imaging device of Embodiment 2 and the imaging device of Embodiment 3.

[0037] Fig.13 This is a schematic partial cross-sectional view of the imaging element-A included in the imaging device of Example 1.

[0038] Fig.14 This is a schematic partial cross-sectional view of a modification of the imaging element-A included in the imaging device of Example 1.

[0039] Fig.15 is a schematic plan view of the arrangement of the first electrode, the charge storage electrode, etc. in the image pickup device of Embodiment 1.

[0040] Fig.16A , Fig. 16B and Fig. 16C It is used to illustrate Fig.17 (Example 1), Fig.33 and 34 (Example 11) and Fig.45 and 46 (Example 13) is an equivalent circuit diagram of the imaging element-A of Example 1, Example 11 and Example 13 showing each part.

[0041] Fig.17 1 is a diagram schematically showing potential states at various parts during operation of the image pickup element-A included in the image pickup device of Example 1.

[0042] Fig.18 This is a schematic partial cross-sectional view of an imaging element-A included in the imaging device of Example 8.

[0043] Fig.19 This is an equivalent circuit diagram of the imaging element-A included in the imaging device of Example 8.

[0044] Fig. 20 This is an equivalent circuit diagram of the imaging element-A included in the imaging device of Example 8.

[0045] Fig.21 1 is a schematic layout diagram of a first electrode, a charge storage electrode, and a transistor constituting a control unit in an image pickup element-A included in the image pickup device of Example 8.

[0046] Fig. 22 1 is a schematic layout diagram of the first electrode and the charge storage electrode in the imaging element-A constituting the imaging device of Example 8.

[0047] Fig.23 This is a schematic perspective view of a first electrode, a charge storage electrode, a second electrode, and a contact hole portion in the imaging element-A constituting the imaging device of Example 8.

[0048] Fig.24 This is an equivalent circuit diagram of a modified example of the imaging element-A included in the imaging device of Example 8.

[0049] Fig.25 yes Fig.24 Schematic layout diagram of a first electrode, a charge storage electrode, and transistors constituting a control unit in a modified example of the imaging element-A included in the imaging device of Example 8 shown.

[0050] Fig.26 This is a schematic partial cross-sectional view of an imaging element-A included in the imaging device of Example 9.

[0051] Fig. 27 This is a schematic partial cross-sectional view of an image pickup element-A included in the image pickup device of Example 10.

[0052] Fig.28 This is a schematic partial cross-sectional view of a modification of the imaging element-A included in the imaging device of Example 10.

[0053] Fig.29 This is a schematic partial cross-sectional view of a portion of the imaging element-A included in the imaging device of Example 11.

[0054] Fig.30 This is an equivalent circuit diagram of the imaging element-A included in the imaging device of Example 11.

[0055] Fig.31 This is an equivalent circuit diagram of the imaging element-A included in the imaging device of Example 11.

[0056] Fig.32 1 is a schematic layout diagram of a first electrode, a transfer control electrode, a charge storage electrode, and a transistor constituting a control unit in the image pickup element-A included in the image pickup device of Example 11.

[0057] Fig.33 11 is a diagram schematically showing potential states at various parts during operation of the image pickup element-A included in the image pickup device of Example 11.

[0058] Fig.34 11 is a diagram schematically showing potential states at various parts during another operation of the image pickup element-A included in the image pickup device of Example 11.

[0059] Fig.35 1 is a schematic layout diagram of the first electrode, the transfer control electrode, and the charge storage electrode in the imaging element-A constituting the imaging device of Example 11.

[0060] Fig.36 It is a schematic stereoscopic diagram of a first electrode, a transfer control electrode, a charge storage electrode, a second electrode, and a contact hole portion in the imaging element-A constituting the imaging device of Example 11.

[0061] Fig.37 This is a schematic layout diagram of a first electrode, a transfer control electrode, a charge storage electrode, and a transistor constituting a control unit in a modified example of the imaging element-A included in the imaging device of Example 11.

[0062] Fig.38 This is a schematic partial cross-sectional view of a portion of the imaging element-A included in the imaging device of Example 12.

[0063] Fig.39 14 is a schematic layout diagram of a first electrode, a charge storage electrode, and a charge discharge electrode in the image pickup element-A constituting the image pickup device of Example 12.

[0064] Fig.40 This is a schematic stereoscopic diagram of a first electrode, a charge storage electrode, a charge discharge electrode, a second electrode, and a contact hole portion in the imaging element-A constituting the imaging device of Example 12.

[0065] Fig.41This is a schematic partial cross-sectional view of the imaging element-A included in the imaging device of Example 13.

[0066] Fig.42 This is an equivalent circuit diagram of the imaging element-A included in the imaging device of Example 13.

[0067] Fig.43 This is an equivalent circuit diagram of the imaging element-A included in the imaging device of Example 13.

[0068] Fig.44 This is a schematic layout diagram of a first electrode, a charge storage electrode, and transistors constituting a control unit in an image pickup element-A included in the image pickup device of Example 13.

[0069] Fig.45 13 is a diagram schematically showing potential states at various parts during operation of the imaging element-A included in the imaging device of Example 13.

[0070] Fig.46 14 is a diagram schematically showing potential states at various parts during another operation period (transfer operation period) of the imaging element-A included in the imaging device of Example 13.

[0071] Fig.47 14 is a schematic layout diagram of the first electrode and the charge storage electrode in the imaging element-A constituting the imaging device of Example 13.

[0072] Fig.48 It is a schematic stereoscopic diagram of a first electrode, a charge storage electrode, a second electrode, and a contact hole portion in the imaging element-A constituting the imaging device of Example 13.

[0073] Fig.49 14 is a schematic layout diagram of the first electrode and the charge storage electrode in a modified example of the imaging element-A included in the imaging device of Example 13.

[0074] Fig.50 This is a schematic partial cross-sectional view of the imaging element-A included in the imaging device of Example 14.

[0075] Fig.51 is a schematic partial cross-sectional view showing an enlarged view of a portion in which a charge storage electrode, a photoelectric conversion layer, and a second electrode are stacked in the image pickup element-A included in the image pickup device of Embodiment 14.

[0076] Fig.52 This is a schematic layout diagram of a first electrode, a charge storage electrode, and transistors constituting a control unit in a modified example of the imaging element-A included in the imaging device of Example 14.

[0077] Fig.53is a schematic partial cross-sectional view showing an enlarged view of a portion in which a charge storage electrode, a photoelectric conversion layer, and a second electrode are stacked in the image pickup element-A included in the image pickup device of Example 15.

[0078] Fig.54 This is a schematic partial cross-sectional view of the imaging element-A included in the imaging device of Example 16.

[0079] Fig.55 It is a schematic partial cross-sectional view of the imaging element-A included in the imaging devices of Example 17 and Example 18.

[0080] Fig.56A and Fig.56B 14 is a schematic plan view of a charge storage electrode segment in the image pickup element-A included in the image pickup device of Example 18.

[0081] Fig.57A and Fig.57B 14 is a schematic plan view of a charge storage electrode segment in the image pickup element-A included in the image pickup device of Example 18.

[0082] Fig.58 This is a schematic layout diagram of a first electrode, a charge storage electrode, and transistors constituting a control unit in an image pickup element-A included in the image pickup device of Example 18.

[0083] Fig.59 This is a schematic layout diagram of the first electrode and the charge storage electrode in a modified example of the imaging element-A included in the imaging device of Example 18.

[0084] Fig.60 This is a schematic partial cross-sectional view of the imaging element-A included in the imaging devices of Example 19 and Example 18.

[0085] Fig.61A and Fig.61B 19 is a schematic plan view of a charge storage electrode segment in the image pickup element-A included in the image pickup device of Example 19.

[0086] Fig.62 This is a schematic partial cross-sectional view of another modified example of the imaging element-A included in the imaging device of Example 8.

[0087] Fig.63 This is a conceptual diagram of the imaging device (solid-state imaging device) of the first embodiment.

[0088] Fig.64 : is a conceptual diagram of an example in which a solid-state imaging device formed of the imaging device of the present disclosure or the like is used in an electronic device (camera).

[0089] Fig.65This is a conceptual diagram of a conventional stacked imaging element (stacked imaging device).

[0090] Fig.66 is a block diagram schematically showing an exemplary configuration of a vehicle control system.

[0091] Fig.67 1 is an explanatory diagram showing an example of the installation positions of the vehicle exterior information detection unit and the imaging unit.

[0092] Fig.68 is a diagram schematically showing an exemplary configuration of an endoscopic surgery system.

[0093] Fig.69 is a block diagram showing an example of the functional configuration of a camera head and a CCU. DETAILED DESCRIPTION

[0094] The following is a description of the present disclosure based on the embodiments with reference to the drawings. However, the present disclosure is not limited to the embodiments, and the various numerical values ​​and materials mentioned in the embodiments are only exemplary. Note that the description will be given in the following order.

[0095] 1. Overview of Image Capture Devices According to First and Second Embodiments of the Present Disclosure

[0096] 2. Example 1 (Image pickup device according to the first embodiment of the present disclosure)

[0097] 3. Example 2 (Variation of Example 1)

[0098] 4. Example 3 (Variation of Examples 1 and 2)

[0099] 5. Embodiment 4 (Variation of Embodiments 1 to 3)

[0100] 6. Embodiment 5 (Variation of Embodiments 1 to 4)

[0101] 7. Example 6 (Variation of Examples 1 to 5)

[0102] 8. Example 7 (Image capture device according to the second embodiment of the present disclosure)

[0103] 9. Embodiment 8 (Variation of Embodiments 1 to 7)

[0104] 10. Example 9 (Variation of Example 8)

[0105] 11. Example 10 (Variation of Examples 8 and 9)

[0106] 12. Example 11 (Variation of Examples 8 to 10)

[0107] 13. Example 12 (Variation of Examples 8 to 11)

[0108] 14. Example 13 (Variation of Examples 8 to 12)

[0109] 15. Example 14 (Modification of Examples 8 to 13 and Image Pickup Elements of the First and Sixth Structures)

[0110] 16. Example 15 (Image pickup element of the second and sixth structures)

[0111] 17. Example 16 (Image pickup element of the third structure)

[0112] 18. Example 17 (Image pickup element of the fourth structure)

[0113] 19. Example 18 (Image pickup element of the fifth structure)

[0114] 20. Example 19 (Sixth Structure of Image Pickup Element)

[0115] 21. Other aspects

[0116] <Overview of Image Pickup Devices According to First and Second Embodiments of the Present Disclosure>

[0117] In the imaging device according to the first embodiment of the present disclosure, the outer edge electrode can be positioned to face the common photoelectric conversion layer via the insulating layer. In addition, in this case, a potential having the same sign as the sign of the signal charge can be applied to the outer edge electrode, and the potential having the same sign as the sign of the signal charge can be continuously applied to the outer edge electrode during the operation of the imaging device.

[0118] Alternatively, in the imaging device according to the first embodiment of the present disclosure, the outer edge electrodes may be connected to a common photoelectric conversion layer. In this case, a potential having a sign different from that of the signal charge is applied to the outer edge electrodes, and further, a potential having a sign different from that of the signal charge may be continuously applied to the outer edge electrodes during operation of the imaging device.

[0119] Alternatively, in the imaging device according to the first embodiment of the present disclosure, the outer edge electrode may include: a first outer edge electrode positioned to face the common photoelectric conversion layer via the insulating layer; and a second outer edge electrode arranged outside the first outer edge electrode and connected to the common photoelectric conversion layer.

[0120] In the camera device according to the first embodiment of the present disclosure including the above-mentioned various preferred modes, the outer edge electrode can be designed to surround the optical black region. In this case, the outer edge electrode surrounding the optical black region can have a continuous form, or the outer edge electrode surrounding the optical black region can have a discontinuous form.

[0121] Furthermore, in the imaging device according to the first embodiment of the present disclosure including the above-described various preferred modes and configurations,

[0122] Both the imaging element-A and the imaging element-B include:

[0123] a photoelectric conversion unit in which a first electrode, a photoelectric conversion layer, and a second electrode are stacked,

[0124] The photoelectric conversion unit further includes a charge storage electrode arranged at a distance from the first electrode and positioned to face the photoelectric conversion layer via the insulating layer,

[0125] The photoelectric conversion layer forming the imaging element-A and the photoelectric conversion layer forming the imaging element-B are formed of a common photoelectric conversion layer,

[0126] The second electrode forming the imaging element-A and the second electrode forming the imaging element-B are formed by a common second electrode, and

[0127] Light enters from the common second electrode side. In addition, in this case, the outer edge electrode may be arranged on the first electrode side relative to the common photoelectric conversion layer, or the outer edge electrode may be arranged on the second electrode side relative to the common photoelectric conversion layer.

[0128] In the imaging device according to the second embodiment of the present disclosure,

[0129] The imaging element-A, the imaging element-B and the imaging element-C each include:

[0130] a photoelectric conversion unit in which a first electrode, a photoelectric conversion layer, and a second electrode are stacked,

[0131] The photoelectric conversion unit further includes a charge storage electrode arranged at a distance from the first electrode and positioned to face the photoelectric conversion layer via the insulating layer,

[0132] The photoelectric conversion layer forming the imaging element-A, the photoelectric conversion layer forming the imaging element-B, and the photoelectric conversion layer forming the imaging element-C are formed of a common photoelectric conversion layer,

[0133] The second electrode forming the imaging element-A, the second electrode forming the imaging element-B, and the second electrode forming the imaging element-C are formed by a common second electrode,

[0134] During the operation of the image pickup device, a potential having a sign opposite to that of the signal charge is continuously applied to the first electrode forming the image pickup element-C, and,

[0135] During operation of the image pickup device, a potential having the same sign as that of the signal charge is applied to the charge storage electrode forming the image pickup element-C.

[0136] In the image pickup device according to the second embodiment of the present disclosure including the above-described preferred modes, the thickness of the insulating layer forming the image pickup element-C may be smaller than the thickness of the insulating layer forming the image pickup element-A and the image pickup element-B.

[0137] In the following description, there is a case where an outer edge electrode positioned to face the common photoelectric conversion layer via an insulating layer is referred to as a "first outer edge electrode", and an outer edge electrode connected to the common photoelectric conversion layer is referred to as a "second outer edge electrode". In addition, there is a case where the imaging device according to the first embodiment and the second embodiment of the present disclosure including the above-mentioned various preferred modes and configurations is collectively referred to as "the imaging device of the present disclosure, etc."

[0138] The imaging element-A and the imaging element-B constituting the imaging device or the like of the present disclosure may be stacked imaging elements (which will be described in detail later).

[0139] On the other hand, in the case where an organic semiconductor material is used for the photoelectric conversion layer, the imaging element can perform photoelectric conversion on a specific color (wavelength band). In the case where such an imaging element is used in an imaging device, due to this characteristic, a structure in which sub-pixels are stacked (stacked imaging element) can be obtained, which is impossible in a conventional imaging device in which an on-chip color filter layer (OCCF: on-chip color filter) and an imaging element constitute sub-pixels and the sub-pixels are arranged two-dimensionally (for example, see Japanese Patent Application Laid-Open No. 2011-138927). In addition, since demosaicing is not required, there is an advantage that no false color appears. In the following description, in some cases, for convenience, an imaging element arranged on or above a semiconductor substrate and including a photoelectric conversion unit may be referred to as a "first type imaging element", a photoelectric conversion unit forming the first type imaging element may be referred to as a "first type photoelectric conversion unit", an imaging element arranged in a semiconductor substrate may be referred to as a "second type imaging element", and a photoelectric conversion unit forming the second type imaging element may be referred to as a "second type photoelectric conversion unit".

[0140] In some cases, the material forming the photoelectric conversion layer located above the charge storage electrode may be different from the material forming the photoelectric conversion layer located above the first electrode.

[0141] Fig.65 FIG. 2 shows an exemplary configuration of a conventional stacked image pickup element (stacked image pickup device). Fig.65In the example shown, the third photoelectric conversion unit 543A and the second photoelectric conversion unit 541A as the second type photoelectric conversion unit of the third imaging element 543 and the second imaging element 541 as the second type photoelectric conversion unit are stacked and formed in the semiconductor substrate 570. In addition, the first photoelectric conversion unit 510A as the first type photoelectric conversion unit is arranged above the semiconductor substrate 570 (specifically, above the second imaging element 541). Here, the first photoelectric conversion unit 510A includes a first electrode 521, a photoelectric conversion layer 523 formed of an organic material, and a second electrode 522, and forms the first imaging element 510 as the first type imaging element. For example, the second photoelectric conversion unit 541A and the third photoelectric conversion unit 543A perform photoelectric conversion on blue light and red light, respectively, according to the difference in absorption coefficient. On the other hand, for example, the first photoelectric conversion unit 510A performs photoelectric conversion on green light.

[0142] The charges generated by photoelectric conversion in the second photoelectric conversion unit 541A and the third photoelectric conversion unit 543A are transferred to the second floating diffusion layer FD2 and the third floating diffusion layer FD3 through a vertical transistor (shown as a gate portion 545) and a transfer transistor (shown as a gate portion 546) respectively after being temporarily stored in the second photoelectric conversion unit 541A and the third photoelectric conversion unit 543A, and are further output to an external readout circuit (not shown). These transistors and the floating diffusion layers FD2 and FD3 are also formed in the semiconductor substrate 570.

[0143] The charge generated by photoelectric conversion in the first photoelectric conversion unit 510A is stored in the first floating diffusion layer FD1 formed in the semiconductor substrate 570 via the contact hole portion 561 and the wiring layer 562. The first photoelectric conversion unit 510A is also connected to the gate portion 552 of the amplifier transistor that converts the charge amount into a voltage via the contact hole portion 561 and the wiring layer 562. In addition, the first floating diffusion layer FD1 forms a part of the reset transistor (shown as the gate portion 551). Reference numeral 571 denotes an element separation region, reference numeral 572 denotes an oxide film formed on the surface of the semiconductor substrate 570, reference numerals 576 and 581 denote interlayer insulating layers, reference numeral 583 denotes an insulating layer, and reference numeral 514 denotes an on-chip microlens.

[0144] exist Fig.65In the conventional imaging element shown, the charges generated by photoelectric conversion in the second photoelectric conversion unit 541A and the third photoelectric conversion unit 543A are temporarily stored in the second photoelectric conversion unit 541A and the third photoelectric conversion unit 543A, and then transferred to the second floating diffusion layer FD2 and the third floating diffusion layer FD3. Therefore, the second photoelectric conversion unit 541A and the third photoelectric conversion unit 543A can be completely exhausted. However, the charges generated by photoelectric conversion in the first photoelectric conversion unit 510A are directly stored in the first floating diffusion layer FD1. Therefore, it is difficult to completely exhaust the first photoelectric conversion unit 510A. For the above reasons, kTC noise may become larger, random noise may deteriorate, and imaging quality may be reduced.

[0145] As described above, in the camera device and the like of the present disclosure, the photoelectric conversion unit includes a charge storage electrode arranged at a certain distance from the first electrode and positioned to face the photoelectric conversion layer via the insulating layer. With this arrangement, when light is emitted onto the photoelectric conversion unit and photoelectrically converted at the photoelectric conversion unit, the charge can be accumulated in the photoelectric conversion layer. Therefore, at the start of exposure, the charge storage unit can be completely depleted and the charge can be erased. Thus, the occurrence of a phenomenon in which kTC noise becomes larger, random noise deteriorates, and imaging quality decreases can be reduced or prevented.

[0146] The effective pixel area is formed of a plurality of pixels regularly arranged in a two-dimensional array form.

[0147] The imaging device and the like of the present disclosure will be described in detail in Embodiment 1 described below.

[0148] The imaging element in the present disclosure may be a CCD element, a CMOS image sensor, a contact image sensor (CIS) or a signal amplification type image sensor of a charge modulation device (CMD). For example, the imaging device according to the first or second embodiment of the present disclosure or the imaging device of the first or second structure described below may form a digital camera, a digital video camera, a portable video camera, a surveillance camera, a camera installed in a vehicle, a smartphone camera, a game user interface camera or a camera for biometric authentication.

[0149] [Example 1]

[0150] Example 1 relates to an image pickup device according to a first embodiment of the present disclosure. Figure 1 This is a schematic partial cross-sectional view of the imaging device of Example 1. Fig.11A The arrangement of components of the image pickup device of Embodiment 1 is schematically shown. Fig.13 and Fig.14Each shows a schematic partial cross-sectional view of an image pickup element-A forming the image pickup device of Example 1. Fig.15 is a schematic plan view of the arrangement of the first electrode and the charge storage electrode in the image pickup device of Example 1. Note that Figures 1 to 9 In order to simplify the drawing, the interlayer insulating layer 81 is not indicated by hatching. Fig.11A , Fig. 11B and Fig. 12B In FIG. 1 , a region in the outer edge region in which an outer edge electrode (third electrode) 201 as an electrode located in the outer edge region is arranged is denoted by reference numeral 201A and is provided with hatching for the sake of clarity. Fig. 12A and Fig. 12B , an area of ​​the outer edge region in which the outer edge electrode 211 is arranged is denoted by reference numeral 211A and is provided with hatching for the sake of clarity.

[0151] The imaging device of Example 1 includes: an effective pixel area, which includes a plurality of imaging elements-A, receives light, amplifies signal charges generated by photoelectric conversion, and reads the signal charges into a driving circuit; and an optical black area (also referred to as a black reference pixel area, an optical black pixel area, or OPB), which includes a plurality of imaging elements-B, surrounds the effective pixel area, and outputs optical black used as a reference for a black level. In addition, the photoelectric conversion layer 23 forming the plurality of imaging elements-A and imaging elements-B is common between the imaging elements-A and the imaging elements-B, and the common photoelectric conversion layer 23 extends to an outer edge area located outside the optical black area and surrounding the optical black area. The outer edge electrode (third electrode) 201 is arranged in the outer edge area.

[0152] In addition, for example, the camera device of Example 1 forms a digital camera, a digital video camera, a portable video camera, a surveillance camera, a camera installed in a vehicle (vehicle-mounted camera), a smartphone camera, a game user interface camera, or a camera for biometric authentication, etc.

[0153] Each imaging element-A arranged in the effective pixel area includes a photoelectric conversion unit in which a first electrode 21 formed of a conductive material, a photoelectric conversion layer 23 formed of an organic material (specifically, an organic semiconductor material), and a second electrode 22 formed of a transparent conductive material are stacked. Each imaging element-B arranged in the optical black area includes a photoelectric conversion unit in which a first electrode 121, a photoelectric conversion layer 23, and a second electrode 22 are stacked. As described above, the photoelectric conversion layer 23 forming a plurality of imaging elements-A and a plurality of imaging elements-B is common between the imaging elements-A and the imaging elements-B, and the second electrode 22 forming a plurality of imaging elements-A and a plurality of imaging elements-B is also common between the imaging elements-A and the imaging elements-B.

[0154] In each imaging element-A, the photoelectric conversion unit also includes an insulating layer 82 and a charge storage electrode 24 formed of a conductive material. The charge storage electrode 24 is arranged at a certain distance from the first electrode 21 and is positioned to face the photoelectric conversion layer 23 via the insulating layer 82. The photoelectric conversion layer 23 includes: an area in contact with the first electrode 21; an area in contact with the insulating layer 82 and where the charge storage electrode 24 does not exist below the photoelectric conversion layer 23; and an area in contact with the insulating layer 82 and where the charge storage electrode 24 exists below the photoelectric conversion layer 23. Then, light enters from the second electrode 22. In Embodiment 1, holes generated in the photoelectric conversion layer 23 by light irradiation flow into the second electrode 22, and electrons eventually flow into the first electrode 21. In each imaging element-A, an on-chip microlens 14 is provided above the second electrode 22. In Figures 1 to 9 In the figure, the boundaries between the imaging elements are indicated by dotted lines.

[0155] In each imaging element-B, the photoelectric conversion unit further includes an insulating layer 82 and a charge storage electrode 124 arranged at a certain distance from the first electrode 121 and positioned to face the photoelectric conversion layer 23 via the insulating layer 82. The photoelectric conversion layer 23 includes: a region in contact with the first electrode 121; a region in contact with the insulating layer 82 and where the charge storage electrode 124 does not exist below the photoelectric conversion layer 23; and a region in contact with the insulating layer 82 and where the charge storage electrode 124 exists below the photoelectric conversion layer 23. The light shielding layer 15 is formed above the second electrode 22 on the light incident side of the second electrode 22. In addition, in each imaging element-B, an on-chip microlens 14 is provided above the second electrode 22. Holes generated in the photoelectric conversion layer 23 flow into the second electrode 22, and electrons eventually flow into the first electrode 121.

[0156] In Embodiment 1, one imaging element block is formed by four imaging elements-A. Fig.15 As shown in FIG. 1 , one first electrode 21 for four imaging elements-A is shared. Specifically, the first electrode 211 includes charge storage electrodes 24 11 ,twenty four 12 ,twenty four 13 and 24 14 The first electrode 212 is shared among the four imaging elements-A. 21 ,twenty four 22 ,twenty four 23 and 24 24 The first electrode 213 is shared among the four imaging elements-A. The first electrode 213 includes the charge storage electrode 24 31 ,twenty four 32 ,twenty four 33 and 24 34The first electrode 214 is shared among the four imaging elements-A. 41 ,twenty four 42 ,twenty four 43 and 24 44 However, the configuration of the imaging element-A is not limited to this configuration, and the imaging element-A may include one first electrode 21 , or a plurality of imaging elements-A may share one first electrode 21 .

[0157] In addition, the charge transfer control electrode 27 is arranged between the imaging element-A and the imaging element-A. Similarly, the charge transfer control electrode 27 is arranged between the imaging element-B and the imaging element-B. Since the charge transfer control electrode 27 is provided, the charge transfer between the imaging elements-A sandwiching the charge transfer control electrode 27, the charge transfer between the imaging elements-B sandwiching the charge transfer control electrode 27, and the charge transfer between the imaging elements-A and the imaging elements-B sandwiching the charge transfer control electrode 27 can be reliably reduced or prevented. Note that the potential to be applied to the charge transfer control electrode 27 is denoted by V 17 Indicates that, we only need to satisfy V 12 >V 17 V will be explained below. 12 .

[0158] In Embodiment 1, the outer edge electrode 201 is used as a barrier-forming electrode. In addition, the outer edge electrode 201 is arranged to face the common photoelectric conversion layer 23 via the insulating layer 82. In this case, a potential having the same sign as that of the signal charge (electrons in Embodiment 1) (negative potential in Embodiment 1) is applied to the outer edge electrode 201. In addition, during the operation of the image pickup device, a potential having the same sign as that of the signal charge continues to be continuously applied to the outer edge electrode 201. The outer edge electrode 201 surrounds the optical black region (see Fig.11A ). In addition, the outer edge electrode 201 is arranged on the first electrode side relative to the common photoelectric conversion layer 23. Specifically, the outer edge electrode 201 is arranged on the interlayer insulating layer 81 at the same level as the first electrode 21.

[0159] In the effective pixel region, the optical black region, and the outer edge region, the upper insulating layer 83 (83A and 83B) is formed on the second electrode 22, and the light shielding layer 15 is formed between the upper insulating layer 83A and the upper insulating layer 83B in the optical black region and the outer edge region. The first electrodes 21 and 121, the charge storage electrodes 24 and 124, the charge transfer control electrode 27, and the outer edge electrode 201 are formed on the interlayer insulating layer 81, and the charge storage electrodes 24 and 124, the charge transfer control electrode 27, and the outer edge electrode 201 are covered by the insulating layer 82.

[0160] In the following description, reference will be made to Fig.13 or Fig.14 The imaging element-A will be described. On the other hand, the imaging element-B has a configuration and structure basically similar to those of the imaging element-A, and thus the configuration and structure of the imaging element-B will not be described below.

[0161] like Fig.13 As shown, the image pickup element-A of Example 1 is a back-illuminated image pickup element and is formed by a first type image pickup element. Fig.14 As shown in the schematic partial cross-sectional view in , a modified example of the imaging element of Example 1 is a front-illuminated imaging element and is formed by a first type of imaging element. Here, imaging element-A is formed by three types of imaging elements: an imaging element that absorbs red light, an imaging element that absorbs green light, and an imaging element that absorbs blue light. In addition, a plurality of these imaging elements constitute an imaging device. A plurality of these imaging elements can be arranged in a Bayer array. On the light incident side of each imaging element, a color filter layer for performing blue, green, or red spectral separation can be arranged as needed.

[0162] Each imaging element-A also includes a semiconductor substrate (more specifically, a silicon semiconductor layer 70), and a photoelectric conversion unit is arranged above the semiconductor substrate 70. In addition, a control unit is also provided in the semiconductor substrate 70, and the control unit includes a drive circuit connected to the first electrode 21, the second electrode 22, and the outer edge electrode 201 or 211. Here, the light incident surface of the semiconductor substrate 70 is the upper side, and the opposite side of the semiconductor substrate 70 is the lower side. A wiring layer 62 formed of a plurality of wirings is provided below the semiconductor substrate 70.

[0163] In each imaging element-A, the first electrode 21 and the charge storage electrode 24 are formed on the interlayer insulating layer 81 at a certain distance from each other. The interlayer insulating layer 81 and the charge storage electrode 24 are covered by the insulating layer 82. The photoelectric conversion layer 23 is formed on the insulating layer 82, and the second electrode 22 is formed on the photoelectric conversion layer 23. The upper insulating layer 83 (83A and 83B) is formed on the entire surface including the second electrode 22, and the on-chip microlens 14 is provided on the upper insulating layer 83. No color filter layer is provided. The interlayer insulating layer 81, the insulating layer 82, and the upper insulating layer 83 are formed of a known insulating material (for example, SiO2 or SiN). The photoelectric conversion layer 23 and the first electrode 21 are connected by a connection portion 67 formed in the insulating layer 82. The photoelectric conversion layer 23 extends in the connection portion 67. In other words, the photoelectric conversion layer 23 extends in the opening portion 85 formed in the insulating layer 82 and is connected to the first electrode 21.

[0164] The size of the charge storage electrode 24 is larger than the size of the first electrode 21. The area of ​​the charge storage electrode 24 is represented by S1', and the area of ​​the first electrode 21 is represented by S1.

[0165] Preferably meet:

[0166] 4≤S1' / S1,

[0167] However, this is not restrictive.

[0168] In Example 1,

[0169] For example, S1' / S1=8,

[0170] Note that in Embodiments 13 to 17 described below, the three photoelectric conversion unit segments 10'1, 10'2, and 10'3 have the same size and also have the same planar shape.

[0171] The charge storage electrode 24 is connected to the driving circuit. Specifically, the charge storage electrode 24 is connected to the driving circuit via the connection hole 66 provided in the interlayer insulating layer 81, the pad portion 64 and the wiring V OA The outer edge electrode 201 is connected to a vertical driving circuit 312 (described later) forming a driving circuit. Similarly, the outer edge electrode 201 is also connected to the driving circuit.

[0172] In the semiconductor substrate 70, at least a floating diffusion layer FD1 and an amplifier transistor TR1 forming a control unit are provided. amp , and the first electrode 21 is connected to the floating diffusion layer FD1 and the amplification transistor TR1 amp In the semiconductor substrate 70, a reset transistor TR1 forming a control unit is further provided. rst and select transistor TR1 sel The floating diffusion layer FD1 is connected to the reset transistor TR1 rst One of the source / drain regions of the amplifier transistor TR1 amp One of the source / drain regions is connected to the select transistor TR1 sel one of the source / drain regions of the transistor TR1 and selects sel The other of the source / drain regions is connected to the signal line VSL1. The amplifying transistor TR1 amp , reset transistor TR1 rst and select transistor TR1 sel Constitute a driving circuit.

[0173] More specifically, the element separation region 71 is formed on the first surface (front surface) 70A side of the semiconductor substrate 70, and the oxide film 72 is also formed on the first surface 70A of the semiconductor substrate 70. In addition, on the first surface side of the semiconductor substrate 70, a reset transistor TR1 constituting a control unit of the imaging element-A is provided. rst , Amplifier transistor TR1 amp and select transistor TR1 sel , and a first floating diffusion layer FD1 is also provided.

[0174] Reset transistor TR1 rst The reset transistor TR1 includes a gate portion 51, a channel formation region 51A, and source / drain regions 51B and 51C. rst The gate portion 51 is connected to the reset line RST1, the reset transistor TR1 rst One source / drain region 51C also serves as the first floating diffusion layer FD1, and the other source / drain region 51B is connected to the power supply V DD .

[0175] The first electrode 21 is connected to the reset transistor TR1 via the connection hole 65 and the pad portion 63 provided in the interlayer insulating layer 81, the contact hole portion 61 formed in the semiconductor substrate 70 and the interlayer insulating layer 76, and the wiring layer 62 formed in the interlayer insulating layer 76. rst A source / drain region 51C (first floating diffusion layer FD1 ) is formed.

[0176] Amplifier transistor TR1 amp The gate portion 52 includes a gate portion 52, a channel formation region 52A, and source / drain regions 52B and 52C. The gate portion 52 is connected to the first electrode 21 and the reset transistor TR1 via a wiring layer 62. rst A source / drain region 51C (first floating diffusion layer FD1) is connected to the power supply V DD .

[0177] Select transistor TR1 sel The transistor includes a gate portion 53, a channel forming region 53A, and source / drain regions 53B and 53C. The gate portion 53 is connected to the selection line SEL1. In addition, one source / drain region 53B forms an amplifying transistor TR1. amp The other source / drain region 52C shares a region, and the other source / drain region 53C is connected to the signal line (data output line) VSL1 (317).

[0178] The reset line RST1 and the selection line SEL1 are connected to the vertical driving circuit 312 forming the driving circuit, and the signal line (data output line) VSL1 is connected to the column signal processing circuit 313 forming the driving circuit.

[0179] In the interlayer insulating layer 76 , wiring is formed on a plurality of layers, but is not shown in the figure. The HfO 2 film 74 is formed in the rear surface 70B of the semiconductor substrate 70 and in the formation portion of the contact hole portion 61 in the semiconductor substrate 70 .

[0180] The HfO2 film 74 is a film having a negative fixed charge. Since this film is included, the generation of dark current can be reduced. Instead of the HfO2 film, an aluminum oxide (Al2O3) film, a zirconium oxide (ZrO2) film, a tantalum oxide (Ta2O5) film, a titanium oxide (TiO2) film, a lanthanum oxide (La2O3) film, a praseodymium oxide (Pr2O3) film, a cerium oxide (CeO2) film, a neodymium oxide (Nd2O3) film, a promethium oxide (Pm2O3) film, a samarium oxide (Sm2O3) film, Europium oxide (Eu2O3) film, gadolinium oxide (Gd2O3) film, terbium oxide (Tb2O3) film, dysprosium oxide (Dy2O3) film, holmium oxide (Ho2O3) film, thulium oxide (Tm2O3) film, ytterbium oxide (Yb2O3) film, lutetium oxide (Lu2O3) film, yttrium oxide (Y2O3) film, hafnium nitride film, aluminum nitride film, hafnium oxynitride film or aluminum nitride oxide film. For example, these films can be formed by CVD method, PVD method or ALD method.

[0181] In the following description, reference will be made to Fig.16A and Fig.17 The operation of the imaging element including the charge storage electrode of Embodiment 1 is described. Here, the potential of the first electrode 21 is higher than the potential of the second electrode 22. Specifically, for example, the first electrode 21 has a positive potential, the second electrode 22 has a negative potential, and the electrons generated by photoelectric conversion in the photoelectric conversion layer 23 are read out to the floating diffusion layer. The same is true for other embodiments. In addition, in the following description, the operation of the imaging element-A will be described, but the operation of the imaging element-B can be basically similar to the operation of the imaging element-A except that there is no light irradiation. Therefore, the operation of the imaging element-B will not be described below.

[0182] exist Fig.17 , used in Example 11 described below Fig.33 and Fig.34 and for Example 13 described below Fig.45 and Fig.46 The symbols used in are as follows.

[0183] P AA point P in the photoelectric conversion layer 23 facing a region between the charge storage electrode 24 or the transfer control electrode (charge transfer electrode) 25 and the first electrode 21 A The potential at

[0184] P B Point P in the region of the photoelectric conversion layer 23 facing the charge storage electrode 24 B The potential at

[0185] P C1 Point P in the region of the photoelectric conversion layer 23 facing the charge storage electrode segment 24A C1 The potential at

[0186] P C2 Point P in the region of the photoelectric conversion layer 23 facing the charge storage electrode segment 24B C2 The potential at

[0187] P C3 Point P in the region of the photoelectric conversion layer 23 facing the charge storage electrode segment 24C C3 The potential at

[0188] P D Point P in the region of the photoelectric conversion layer 23 facing the transfer control electrode (charge transfer electrode) 25 D The potential at

[0189] FD Potential in the first floating diffusion layer FD1

[0190] V OA The potential at the charge storage electrode 24

[0191] V OA-A The potential at the charge storage electrode segment 24A

[0192] V OA-B The potential at the charge storage electrode segment 24B

[0193] V OA-C The potential at the charge storage electrode segment 24C

[0194] V OT The potential at the transfer control electrode (charge transfer electrode) 25

[0195] RST reset transistor TR1 rst The potential at the gate portion 51

[0196] V DD Potential at the power supply

[0197] VSL1 signal line (data output line) VSL1

[0198] TR1 rstReset transistor TR1 rst

[0199] TR1 amp Amplifier transistor TR1 amp

[0200] TR1 sel Select transistor TR1 sel

[0201] During the charge accumulation period, the driver circuit sets the potential V 11 is applied to the first electrode 21, and the potential V 12 The light having entered the photoelectric conversion layer 23 causes photoelectric conversion in the photoelectric conversion layer 23. The holes generated by the photoelectric conversion are transferred to the charge storage electrode 24 via the wiring V OU On the other hand, since the potential of the first electrode 21 is higher than that of the second electrode 22, or a positive potential is applied to the first electrode 21 and a negative potential is applied to the second electrode 22, for example, V 12 ≥V 11 , or preferably V 12 >V 11 Therefore, the electrons generated by the photoelectric conversion are attracted to the charge storage electrode 24 and stay in the region of the photoelectric conversion layer 23 facing the charge storage electrode 24. In other words, the charges are accumulated in the photoelectric conversion layer 23. 12 >V 11 , so the electrons generated in the photoelectric conversion layer 23 will not move toward the first electrode 21. As the time of photoelectric conversion passes, the potential in the region of the photoelectric conversion layer 23 facing the charge storage electrode 24 becomes a more negative value.

[0202] A reset operation is performed at the later stage of the charge accumulation period. Therefore, the potential of the first floating diffusion layer FD1 is reset, and the potential of the first floating diffusion layer FD1 becomes equal to the potential V DD .

[0203] After the reset operation is completed, the charge is read out. In other words, during the charge transfer period, the driver circuit sets the potential V 21 is applied to the first electrode 21, and the potential V 22 is applied to the charge storage electrode 24. Here, V 22 <V 21 Therefore, the electrons remaining in the region of the photoelectric conversion layer 23 facing the charge storage electrode 24 are read out into the first electrode 21 and further into the first floating diffusion layer FD1. In other words, the charges accumulated in the photoelectric conversion layer 23 are read out to the control unit.

[0204] In the above-described manner, a series of operations including charge accumulation, reset operation, and charge transfer are completed.

[0205] The outer edge electrode 201 is also connected to the drive circuit. As described above, a potential having the same sign as that of the signal charge (electrons in Embodiment 1) (negative potential in Embodiment 1) is applied to the outer edge electrode 201. Furthermore, during the operation of the image pickup device, a potential having the same sign as that of the signal charge continues to be continuously applied to the outer edge electrode 201. Specifically, when the potential applied to the outer edge electrode 201 is V 201 In the case of 201 The value is always lower than V 12 Therefore, during a series of operations such as charge accumulation, reset operation, and charge transfer, electrons generated in the outer edge region cannot exceed the potential barrier generated by the outer edge electrode 201, and electrons generated in the outer edge region cannot flow into the optical black region.

[0206] After the electrons are read out into the first floating diffusion layer FD1, the amplifying transistor TR1 amp and select transistor TR1 sel The operation of the first floating diffusion layer FD1 is the same as that of the conventional amplifying transistor and the selecting transistor. In addition, a series of operations including charge accumulation, reset operation, and charge transfer performed in the second imaging element and the third imaging element described below are also similar to a series of conventional operations including charge accumulation, reset operation, and charge transfer. In addition, as in the conventional operation, the reset noise in the first floating diffusion layer FD1 can be eliminated by the correlated double sampling (CDS) process.

[0207] Fig.63 31 is a conceptual diagram of the imaging device of Example 1. The imaging device 300 of Example 1 includes an imaging area (effective pixel area) 311 in which imaging elements 301 are arranged in a two-dimensional array, a vertical drive circuit 312 as a drive circuit (peripheral circuit) for the imaging elements 301, a column signal processing circuit 313, a horizontal drive circuit 314, an output circuit 315, a drive control circuit 316, and the like. These circuits may be formed by known circuits, or may of course be formed by other circuit configurations (for example, various circuits used in conventional CCD imaging devices or CMOS imaging devices). Fig.63 , the reference numeral “ 301 ” of the imaging element 301 is shown only in one row.

[0208] Based on the vertical synchronization signal, the horizontal synchronization signal, and the main clock, the drive control circuit 316 generates a clock signal and a control signal used as a reference for the operations of the vertical drive circuit 312, the column signal processing circuit 313, and the horizontal drive circuit 314. Then, the generated clock signal and control signal are input to the vertical drive circuit 312, the column signal processing circuit 313, and the horizontal drive circuit 314.

[0209] The vertical drive circuit 312 is formed of a shift register, for example, and selectively scans each imaging element 301 in the imaging area 311 row by row in sequence in the vertical direction. Then, a pixel signal (image signal) based on a current (signal) generated according to the amount of light received in each imaging element 301 is sent to the column signal processing circuit 313 via a signal line (data output line) 317 and VSL.

[0210] For example, the column signal processing circuit 313 is provided for each column of the imaging element 301, and performs signal processing such as noise removal and signal amplification on the image signal output from one row of the imaging element 301 based on the signal of the black reference pixel (formed around the effective pixel area, although not shown) from each imaging element. A horizontal selection switch (not shown) is provided between the output stage of the column signal processing circuit 313 and the horizontal signal line 318 and connected therebetween.

[0211] The horizontal drive circuit 314 is formed of a shift register, for example. The horizontal drive circuit 314 sequentially selects each column signal processing circuit 313 by sequentially outputting horizontal scanning pulses, and causes each column signal processing circuit 313 to output a signal to a horizontal signal line 318 .

[0212] The output circuit 315 performs signal processing on the signals sequentially supplied from the column signal processing circuits 313 through the horizontal signal line 318 , and outputs the processed signals.

[0213] As described above, in the image pickup device of Example 1, the outer edge electrode is arranged in the outer edge area. Therefore, the charge generated at the edge of the photoelectric conversion layer is prevented from moving toward the image pickup element-B and entering the image pickup element-B. Therefore, any problem that hinders the function of the optical black area does not occur. As described above, in Example 1, the charge storage electrode is arranged at a certain distance from the first electrode and is positioned to face the photoelectric conversion layer via the insulating layer. Therefore, when light is emitted onto the photoelectric conversion layer and photoelectric conversion is performed in the photoelectric conversion layer, a capacitor is formed by the photoelectric conversion layer, the insulating layer and the charge storage electrode, and the charge can be stored in the photoelectric conversion layer. Therefore, at the beginning of exposure, the charge storage portion can be completely depleted and the charge can be erased. Therefore, the occurrence of a phenomenon in which kTC noise becomes larger, random noise deteriorates, and imaging quality decreases can be reduced or prevented. In addition, all pixels can be reset at the same time, and a so-called global shutter function can be realized.

[0214] like Fig. 11B As shown in the schematic layout diagram of the components of the modified example of the camera device of Example 1 in FIG. 1 , the outer edge electrode 201 (or the outer edge electrode 211 described below) surrounding the optical black area can be formed in a discontinuous manner. In addition, although not shown in the figure, the outer edge electrode 201 (or the outer edge electrode 211 described below) can be formed along a partial area in the optical black area (or, for example, can be formed along one side, two sides, or three sides of the optical black area having a rectangular planar shape).

[0215] The imaging element-A and the imaging element-B constituting the imaging device and the like of the present disclosure will be described in detail and comprehensively in Embodiment 7 and Embodiment 8.

[0216] [Example 2]

[0217] Example 2 is a variation of Example 1. Figure 2 is a schematic partial cross-sectional view of an imaging device, and Fig. 12A The arrangement of components of the camera device is schematically shown. Figure 2 and Fig. 12A As shown, in the image pickup device of Embodiment 2, the outer edge electrode (fourth electrode) 211, which is an electrode located in the outer edge region, is connected to the common photoelectric conversion layer 23. The outer edge electrode 211 serves as a charge discharge electrode. A potential having a sign different from that of the signal charge (specifically, a positive potential) is applied to the outer edge electrode 211, and during the operation of the image pickup device, a potential having a sign different from that of the signal charge (specifically, a positive potential) continues to be continuously applied to the outer edge electrode 211. Specifically, when the potential applied to the outer edge electrode 211 is V 211 In the case of 211 The value is always higher than V12 .

[0218] Therefore, during a series of operations such as charge accumulation, reset operation, and charge transfer, electrons generated in the outer edge region flow into the outer edge electrode, and electrons generated in the outer edge region do not flow into the optical black region. In addition, since the charge transfer control electrode is provided in the optical black region, electrons generated in the outer edge region can be more reliably prevented from flowing into the optical black region.

[0219] Except for the above-mentioned aspects, the configuration and structure of the camera device of Example 2 may be similar to the configuration and structure of the camera device of Example 1, and therefore, will not be described in detail here.

[0220] [Example 3]

[0221] Embodiment 3 is a modification of Embodiments 1 and 2. Figure 3 A schematic partial cross-sectional view of a camera device is shown, and Fig. 12B The arrangement of components of the camera device is schematically shown. Figure 3 and Fig. 12B As shown, in the camera device of Example 3, the outer edge electrode is formed by a first outer edge electrode (third electrode) 201 (the outer edge electrode 201 in Example 1) arranged to face the common photoelectric conversion layer via the insulating layer 82 and a second outer edge electrode (fourth electrode) 211 (the outer edge electrode 211 in Example 2) arranged on the outside of the first outer edge electrode 201 and connected to the common photoelectric conversion layer 23.

[0222] Except for the above-mentioned aspects, the configuration and structure of the camera device of Embodiment 3 may be similar to the configuration and structure of the camera device of Embodiments 1 and 2, and therefore, will not be described in detail here.

[0223] [Example 4]

[0224] Embodiment 4 is a variation of Embodiments 1 to 3. Figure 4As shown, it is a schematic partial cross-sectional view of a modified example of the camera device of Example 3. In the camera device of Example 4, the first outer edge electrode (third electrode) 201 (the outer edge electrode 201 in Example 1) arranged to face the common photoelectric conversion layer via the insulating layer 82 and the second outer edge electrode (fourth electrode) 211 (the outer edge electrode 211 in Example 2) arranged on the outside of the first outer edge electrode 201 and connected to the common photoelectric conversion layer 23 are formed into a pair, and two pairs are provided. However, the number of these pairs does not have to be two pairs, and may be three or more pairs, or may be the same as or different from the number of the first outer edge electrodes 201 and the number of the second outer edge electrodes 211. Alternatively, zero or one first outer edge electrode 201 may be provided, and two or more second outer edge electrodes 211 may be provided. Zero or one second outer edge electrode 211 may be provided, and two or more first outer edge electrodes 201 may be provided.

[0225] In addition, the widths of the plurality of first outer edge electrodes 201 may be changed, the intervals between the first outer edge electrodes 201 may be changed, the widths of the plurality of second outer edge electrodes 211 may be changed, the intervals between the second outer edge electrodes 211 may be changed, or the intervals between the first outer edge electrodes 201 and the second outer edge electrodes 211 may be changed. The potential applied to each of the first outer edge electrodes 201 may be changed for each first outer edge electrode 201, and the potential applied to each of the second outer edge electrodes 211 may be changed for each second outer edge electrode 211.

[0226] Except for the above-mentioned aspects, the configuration and structure of the camera device of Embodiment 4 may be similar to the configuration and structure of the camera device of Embodiments 1 and 2, and therefore, will not be described in detail here.

[0227] [Example 5]

[0228] Embodiment 5 is a variation of Embodiments 1 to 4. Figure 5 As shown in the schematic partial cross-sectional view of the imaging device in , in the imaging device of Example 5, the photoelectric conversion layer 23 has a two-layer structure including an organic semiconductor material layer 23A and an oxide semiconductor material layer 23B formed of IGZO or the like. The work function of the oxide semiconductor material layer 23B is different from the work function of the first electrode 21. In addition, the LUMO value E1 of the material forming the portion of the organic semiconductor material layer 23A located near the oxide semiconductor material layer 23B and the LUMO value E2 of the material forming the oxide semiconductor material layer 23B preferably satisfy the following expression:

[0229] E2-E1 ≥ 0.1 eV,

[0230] Or, more preferably, the following expression is satisfied:

[0231] E2-E1>0.1eV

[0232] Since the photoelectric conversion layer has the above-mentioned two-layer structure, recombination during charge accumulation can be prevented, the efficiency of transferring the charges stored in the photoelectric conversion layer to the first electrode can be improved, and the generation of dark current can be reduced.

[0233] In addition, if Figure 6 , which is a schematic partial cross-sectional view of an image pickup device, in a modified example of the image pickup device of Embodiment 5, the photoelectric conversion layer 23 in the effective pixel region and the optical black region has a two-layer structure including an organic semiconductor material layer 23A and an oxide semiconductor material layer 23B, and the photoelectric conversion layer 23 in the outer edge region has a single-layer structure formed of the organic semiconductor material layer 23A. With this arrangement, the movement of electrons in the photoelectric conversion layer 23 in the outer edge region to the first outer edge electrode 201 and the second outer edge electrode 211 can be made slower than the movement of electrons in the photoelectric conversion layer 23 in the effective pixel region and the optical black region to the first electrodes 21 and 121. Therefore, the movement of electrons from the outer edge region to the optical black region can be more effectively reduced or prevented.

[0234] Except for the above-mentioned aspects, the configuration and structure of the camera device of Example 5 may be similar to the configuration and structure of the camera device of Examples 1 to 4, and therefore, will not be described in detail here.

[0235] [Example 6]

[0236] Embodiment 6 is a variation of Embodiments 1 to 5. Figure 7 , which is a schematic partial cross-sectional view of a modification of the imaging device of Embodiment 1, in the imaging device of Embodiment 6 which is a modification of Embodiment 1, the outer edge electrode (third electrode) 201 is arranged on the second electrode side relative to the common photoelectric conversion layer 23. Figure 8, which is a schematic partial cross-sectional view of an image pickup device, in a modification of the image pickup device of Example 6 which is a modification of Example 3, the outer edge electrode 201 is arranged on the second electrode side relative to the common photoelectric conversion layer 23. The outer edge electrode (fourth electrode) 211 is arranged on the first electrode side relative to the common photoelectric conversion layer 23. Alternatively, although not shown in any figure, in a modification of the image pickup device of Example 6 which is a modification of Example 2, the outer edge electrode 211 may be arranged on the second electrode side relative to the common photoelectric conversion layer 23. Alternatively, the outer edge electrode 201 may be arranged on the second electrode side relative to the common photoelectric conversion layer 23, the outer edge electrode 211 may be arranged on the second electrode side relative to the common photoelectric conversion layer 23, the outer edge electrode 201 may be arranged on the first electrode side relative to the common photoelectric conversion layer 23, and the outer edge electrode 211 may be arranged on the second electrode side relative to the common photoelectric conversion layer 23.

[0237] Except for the above-mentioned aspects, the configuration and structure of the camera device of Example 6 may be similar to the configuration and structure of the camera device of Examples 1 to 5, and therefore, will not be described in detail here.

[0238] [Example 7]

[0239] Example 7 relates to an image pickup device according to a second embodiment of the present disclosure.

[0240] like Fig. 9 As shown in the schematic partial cross-sectional view of , the imaging device of Embodiment 7 includes: an effective pixel region including a plurality of imaging elements-A, amplifying signal charges generated by photoelectric conversion and reading out the signal charges to a driving circuit; an optical black region including a plurality of imaging elements-B, surrounding the effective pixel region and outputting optical black used as a reference for a black level; and an outer edge region including a plurality of imaging elements-C and surrounding the optical black region. In addition, the photoelectric conversion layer 23 forming the plurality of imaging elements-A, the plurality of imaging elements-B, and the plurality of imaging elements-C is a common photoelectric conversion layer, and during the operation of the imaging device, the imaging element-C is always in an operating state.

[0241] In the imaging device according to the second embodiment of the present disclosure, each imaging element-A includes a photoelectric conversion unit formed by stacking a first electrode 21, a photoelectric conversion layer 23, and a second electrode 22, and the photoelectric conversion unit also includes a charge storage electrode 24 arranged at a distance from the first electrode 21 and positioned to face the photoelectric conversion layer 23 via the insulating layer 82. Each imaging element-B includes a photoelectric conversion unit formed by stacking a first electrode 121, a photoelectric conversion layer 23, and a second electrode 22, and the photoelectric conversion unit also includes a charge storage electrode 124 arranged at a distance from the first electrode 121 and positioned to face the photoelectric conversion layer 23 via the insulating layer 82. Each imaging element-C includes a photoelectric conversion unit formed by stacking a first electrode 221, a photoelectric conversion layer 23, and a second electrode 22, and the photoelectric conversion unit also includes a charge storage electrode 224 arranged at a distance from the first electrode 221 and positioned to face the photoelectric conversion layer 23 via the insulating layer 82.

[0242] In addition, the charge transfer control electrode 27 is arranged between the imaging element-A and the imaging element-A. Similarly, the charge transfer control electrode 27 is arranged between the imaging element-B and the imaging element-B, and the charge transfer control electrode 27 is arranged between the imaging element-C and the imaging element-B. In addition, the charge transfer control electrode 227 is also arranged between the imaging element-C and the imaging element-C. Since the charge transfer control electrodes 27 and 227 are provided, the charge transfer between the imaging element-A sandwiched by the charge transfer control electrode 27, the charge transfer between the imaging element-B sandwiched by the charge transfer control electrode 27, the charge transfer between the imaging element-A and the imaging element-B sandwiched by the charge transfer control electrode 27, the charge transfer between the imaging element-B and the imaging element-C sandwiched by the charge transfer control electrode 27, and the charge transfer between the imaging element-C sandwiched by the charge transfer control electrode 227, etc. can be reliably reduced or prevented. Note that when the potential applied to the charge transfer control electrode 27 or 227 is V 17 In the case of 12 >V 17 V will be explained below. 12 .

[0243] In addition, the photoelectric conversion layer forming imaging element-A, the photoelectric conversion layer forming imaging element-B, and the photoelectric conversion layer forming imaging element-C are formed by a common photoelectric conversion layer 23, and the second electrode forming imaging element-A, the second electrode forming imaging element-B, and the second electrode forming imaging element-C are formed by a common second electrode 22.

[0244] During the operation of the imaging device, a potential having a sign opposite to that of the signal charge (specifically, a positive potential) is continuously applied to the first electrode 221 forming the imaging element-C, and further, during the operation of the imaging device, a charge having a sign identical to that of the signal charge (specifically, a negative potential) is continuously applied to the charge storage electrode 224 forming the imaging element-C. Specifically, for example, when the potential applied to the first electrode 221 is V 221 In the case of 221 The value is always higher than V 21 For example, when the potential applied to the charge storage electrode 224 is V 224 In the case of 224 The value is always less than V 22 . Note that the operations of the imaging element-A and the imaging element-B may be similar to the operations of the imaging element-A and the imaging element-B described in Example 1. In addition, the construction and structure of the imaging element-A and the imaging element-B may be similar to the construction and structure of the imaging element-A and the imaging element-B described in Example 1, and the construction and structure of the imaging element-C may be substantially similar to the construction and structure of the imaging element-A or the imaging element-B described in Example 1. Therefore, detailed description will not be given here.

[0245] like Fig.10 As shown in the schematic partial cross-sectional view in FIG, in a modification of the imaging device of Example 7, the thickness of the insulating layer 82 forming the imaging element-C can be smaller than the thickness of the insulating layer 82 forming the imaging element-A and the imaging element-B. In this way, the electric field generated in the imaging element-C can be different from the electric field generated in the imaging element-A and the imaging element-B.

[0246] In addition, the distance between the imaging element-B and the imaging element-C is appropriately selected so that the charge transfer can be optimized. Specifically, for example, it is only required that the distance between the imaging element-B and the imaging element-C is longer than the distance between the imaging element-A and the imaging element-B. Alternatively, the size of the imaging element-B may be different from the size of the imaging element-C.

[0247] In the imaging device of Example 7, imaging elements-C are provided in the outer edge area surrounding the optical black area, and these imaging elements-C are always in operation during the operation of the imaging device. Therefore, the charge generated at the edge of the photoelectric conversion layer moves to the imaging element-C, but does not enter the imaging element-B. Therefore, any problem of hindering the function of the optical black area does not occur.

[0248] In the following description, the imaging element-A, imaging element-B, and imaging element-C (imaging elements) constituting the imaging device of the present disclosure will be described in detail and comprehensively. Note that in some cases, imaging element-A, imaging element-B, and imaging element-C may be simply collectively referred to as "imaging elements".

[0249] The camera device of the present disclosure may further include:

[0250] semiconductor substrate, and

[0251] A photoelectric conversion unit, which may be arranged over a semiconductor substrate. Note that the first electrode, the charge storage electrode, and the second electrode are connected to a drive circuit.

[0252] In addition, in the imaging device of the present disclosure including the above-mentioned various modes and configurations, the first electrode may extend in the opening formed in the insulating layer and may be connected to the photoelectric conversion layer. Alternatively, the photoelectric conversion layer may extend in the opening formed in the insulating layer and be connected to the first electrode.

[0253] in this case,

[0254] An edge portion of the upper surface of the first electrode may be covered by an insulating layer,

[0255] The first electrode may be exposed through a bottom surface of the opening, and

[0256] Wherein, the surface of the insulating layer in contact with the upper surface of the first electrode is the first surface, and the surface of the insulating layer in contact with the portion of the photoelectric conversion layer facing the charge storage electrode is the second surface, the side of the opening may be an inclined surface extending from the first surface to the second surface, and further, the side of the opening having the inclined surface extending from the first surface to the second surface may be located on the charge storage electrode side. Note that this includes an embodiment in which another layer is formed between the photoelectric conversion layer and the first electrode (for example, an embodiment in which a material layer suitable for charge accumulation is formed between the photoelectric conversion layer and the first electrode).

[0257] Furthermore, in the imaging device and the like of the present disclosure including the above-described various preferred modes and configurations,

[0258] A control unit may further be provided, which is arranged in the semiconductor substrate and includes a drive circuit,

[0259] The first electrode and the charge storage electrode may be connected to a drive circuit,

[0260] During the charge accumulation period, the drive circuit can 11 is applied to the first electrode and the potential V 12 applied to the charge storage electrode to accumulate charges in the photoelectric conversion layer, and,

[0261] During the charge transfer period, the driver circuit can set the potential V 21 is applied to the first electrode and the potential V 22 Applied to the charge storage electrode to read out the charge accumulated in the photoelectric conversion layer to the control unit through the first electrode. However, in the case where the potential of the first electrode is higher than the potential of the second electrode,

[0262] V 12 ≥V 11 , and V 22 <V 21 ,and

[0263] When the potential of the first electrode is lower than the potential of the second electrode,

[0264] V 12 ≤V 11 , and V 22 >V 21 .

[0265] In addition, the imaging device of the present disclosure including the above-mentioned various preferred modes and configurations may further include a transfer control electrode (charge transfer electrode), which is provided between the first electrode and the charge storage electrode, and is arranged at a certain distance from the first electrode and the charge storage electrode and positioned to face the photoelectric conversion layer via the insulating layer. For convenience, the imaging device of the present disclosure of this mode is also referred to as "the imaging device of the present disclosure including the transfer control electrode".

[0266] Furthermore, in the imaging device and the like of the present disclosure including the transfer control electrode,

[0267] A control unit arranged in the semiconductor substrate and including a drive circuit may be further provided.

[0268] The first electrode, the charge storage electrode and the transfer control electrode may be connected to a driving circuit,

[0269] During the charge accumulation period, the drive circuit can 11 Applied to the first electrode, the potential V 12 applied to the charge storage electrode and the potential V 13 applied to the transfer control electrode to accumulate charges in the photoelectric conversion layer, and,

[0270] During the charge transfer period, the driver circuit can set the potential V 21 Applied to the first electrode, the potential V 22 applied to the charge storage electrode and the potential V 23Applied to the transfer control electrode to read out the charge accumulated in the photoelectric conversion layer to the control unit through the first electrode. However, in the case where the potential of the first electrode is higher than the potential of the second electrode,

[0271] V 12 >V 13 , and V 22 ≤V 23 ≤V 21 ,and,

[0272] When the potential of the first electrode is lower than the potential of the second electrode,

[0273] V 12 <V 13 , and V 22 ≥V 23 ≥V 21 .

[0274] In addition, the camera device of the present disclosure, etc. including the above-mentioned various preferred modes and structures may further include a charge discharge electrode, which is connected to the photoelectric conversion layer and is arranged at a certain distance from the first electrode and the charge storage electrode. For convenience, the camera device of the present disclosure, etc. of this mode is also referred to as "the camera device of the present disclosure, etc. including the charge discharge electrode". In addition, in the camera device of the present disclosure, etc. including the charge discharge electrode, the charge discharge electrode can be positioned to surround the first electrode and the charge storage electrode (in other words, like a frame). The charge discharge electrode can be shared by multiple imaging elements (made common). In addition, in this case,

[0275] The photoelectric conversion layer may extend in the second opening formed in the insulating layer and be connected to the charge exhaust electrode,

[0276] The edge portion of the upper surface of the charge discharge electrode may be covered with an insulating layer.

[0277] The charge discharge electrode may be exposed through the bottom surface of the second opening, and

[0278] The side of the second opening may be a slope extending from a third surface to the second surface, the third surface being the surface of the insulating layer in contact with the upper surface of the charge discharge electrode, and the second surface being the surface of the insulating layer in contact with a portion of the photoelectric conversion layer facing the charge storage electrode.

[0279] Furthermore, in the imaging device or the like of the present disclosure including the charge discharge electrode,

[0280] A control unit arranged in the semiconductor substrate and including a drive circuit may be further provided.

[0281] The first electrode, the charge storage electrode and the charge discharge electrode may be connected to a driving circuit,

[0282] During the charge accumulation period, the drive circuit can 11 Applied to the first electrode, the potential V 12 applied to the charge storage electrode and the potential V 14 applied to the charge discharge electrode to accumulate charges in the photoelectric conversion layer, and

[0283] During the charge transfer period, the driver circuit can set the potential V 21 Applied to the first electrode, the potential V 22 applied to the charge storage electrode and the potential V 24 Applied to the charge discharge electrode to read out the charge accumulated in the photoelectric conversion layer to the control unit through the first electrode. However, in the case where the potential of the first electrode is higher than the potential of the second electrode,

[0284] V 14 >V 11 , and V 24 <V 21 ,and,

[0285] When the potential of the first electrode is lower than the potential of the second electrode,

[0286] V 14 <V 11 , and V 24 >V 21 .

[0287] In addition, in the above-mentioned various preferred modes and configurations in the camera device and the like of the present disclosure, the charge storage electrode can be formed by a plurality of charge storage electrode segments. For the sake of convenience, this form of the camera device and the like of the present disclosure is also referred to as "the camera device and the like of the present disclosure including a plurality of charge storage electrode segments". The number of charge storage electrode segments only needs to be two or more. In addition, in the camera device and the like including a plurality of charge storage electrode segments of the present disclosure, when a different potential is applied to each of the plurality of (N) charge storage electrode segments,

[0288] In the case where the potential of the first electrode is higher than the potential of the second electrode, during charge transfer, the potential applied to the charge storage electrode segment closest to the first electrode (the first photoelectric conversion unit segment) may be higher than the potential applied to the charge storage electrode segment farthest from the first electrode (the Nth photoelectric conversion unit segment), and

[0289] When the potential of the first electrode is lower than the potential of the second electrode, during charge transfer, the potential applied to the charge storage electrode segment closest to the first electrode (the first photoelectric conversion unit segment) may be lower than the potential applied to the charge storage electrode segment farthest from the first electrode (the Nth photoelectric conversion unit segment).

[0290] In the imaging device and the like of the present disclosure including the above-described various preferred modes and configurations,

[0291] At least a floating diffusion layer and an amplifying transistor constituting a control unit may be arranged in the semiconductor substrate, and

[0292] The first electrode may be connected to the floating diffusion layer and the gate portion of the amplifying transistor. In addition, in this case,

[0293] A reset transistor and a selection transistor constituting the control unit may be further arranged in the semiconductor substrate.

[0294] The floating diffusion layer may be connected to one source / drain region of the reset transistor, and

[0295] One source / drain region of the amplification transistor may be connected to one source / drain region of the selection transistor, and the other source / drain region of the selection transistor may be connected to the signal line.

[0296] In addition, in the camera device of the present disclosure including the above-mentioned various preferred modes and configurations, the size of the charge storage electrode may be larger than the size of the first electrode. The area of ​​the charge storage electrode is represented by S1', and the area of ​​the first electrode is represented by S1.

[0297] Preferably, but not necessarily, the following conditions are met

[0298] 4≤S1' / S1.

[0299] Alternatively, a modified example of the imaging device of the present disclosure including the above-mentioned various preferred modes may include the imaging elements of the first to sixth structures described below. Specifically, in the imaging elements of the first to sixth structures in the imaging device of the present disclosure including the above-mentioned various preferred modes,

[0300] The photoelectric conversion unit is formed by N (N≥2) photoelectric conversion unit segments,

[0301] The photoelectric conversion layer is formed by N photoelectric conversion layer segments,

[0302] The insulating layer is formed by N insulating layer segments,

[0303] In the image pickup elements of the first to third configurations, the charge storage electrode is formed of N charge storage electrode segments,

[0304] In the image pickup elements of the fourth and fifth configurations, the charge storage electrode is formed of N charge storage electrode segments which are arranged apart from each other,

[0305] The nth (n=1, 2, 3, ..., N) photoelectric conversion unit segment includes an nth charge storage electrode segment, an nth insulating layer segment and an nth photoelectric conversion layer segment, and

[0306] The photoelectric conversion unit segment having a larger n value is located farther away from the first electrode.

[0307] In addition, in the imaging element of the first structure, the thickness of the insulating layer segment gradually changes from the first photoelectric conversion unit segment to the Nth photoelectric conversion unit segment. On the other hand, in the imaging element of the second structure, the thickness of the photoelectric conversion layer segment gradually changes from the first photoelectric conversion unit segment to the Nth photoelectric conversion unit segment. It should be noted that in the photoelectric conversion layer segment, the thickness of a part of the photoelectric conversion layer may change, and the thickness of another part of the photoelectric conversion layer may be constant, so that the thickness of the photoelectric conversion layer segment changes. The thickness of a part of the photoelectric conversion layer may change, and the thickness of another part of the photoelectric conversion layer may change, so that the thickness of the photoelectric conversion layer segment changes. In addition, in the imaging element of the third structure, the material forming the insulating layer segment is different between adjacent photoelectric conversion unit segments. In addition, in the imaging element of the fourth structure, the material forming the charge storage electrode segment is different between adjacent photoelectric conversion unit segments. In addition, in the imaging element of the fifth structure, the area of ​​the charge storage electrode segment gradually decreases from the first photoelectric conversion unit segment to the Nth photoelectric conversion unit segment. The area may decrease continuously or stepwise.

[0308] Alternatively, in the imaging element of the sixth configuration in the imaging device of the present disclosure and the like including the above-mentioned various preferred modes, the cross-sectional area of ​​the stacked portion of the charge storage electrode, the insulating layer, and the photoelectric conversion layer taken along the YZ virtual plane changes according to the distance from the first electrode, wherein the stacking direction of the charge storage electrode, the insulating layer, and the photoelectric conversion layer is the Z direction, and the direction away from the first electrode is the X direction. The change in the cross-sectional area may be continuous or stepwise.

[0309] In the first and second imaging elements, N photoelectric conversion layer segments are arranged continuously, N insulating layer segments are also arranged continuously, and N charge storage electrode segments are also arranged continuously. In the third to fifth imaging elements, N photoelectric conversion layer segments are arranged continuously. In addition, in the fourth and fifth imaging elements, N insulating layer segments are arranged continuously. On the other hand, in the third imaging element, N insulating layer segments are provided for each photoelectric conversion unit segment in a one-to-one correspondence. In addition, in the fourth and fifth imaging elements, and in some cases in the third imaging element, N charge storage electrode segments are provided for each photoelectric conversion unit segment in a one-to-one correspondence. In the first to sixth imaging elements, the same potential is applied to all charge storage electrode segments. Alternatively, in the fourth and fifth imaging elements, and in some cases in the third imaging element, different potentials may be applied to each of the N charge storage electrode segments.

[0310] In the imaging device of the present disclosure formed by the imaging element of the first to sixth structures, the thickness of each insulating layer segment is specified, the thickness of each photoelectric conversion layer segment is specified, the materials forming the insulating layer segments are different, the materials forming the charge storage electrode segments are different, the area of ​​each charge storage electrode segment is specified, or the cross-sectional area of ​​each stacked portion is specified. Therefore, a charge transfer gradient is formed, and thus the charge generated by the photoelectric conversion can be transferred to the first electrode more easily and reliably. Therefore, the generation of residual images and the generation of transfer residues are then prevented.

[0311] In the first to fifth imaging elements, a photoelectric conversion unit segment having a larger n value is located farther away from the first electrode, and whether the photoelectric conversion unit segment is located away from the first electrode is determined based on the X direction. In addition, in the sixth imaging element, the direction away from the first electrode is the X direction. However, the definition of the "X direction" is as follows. Specifically, in a pixel area in which a plurality of imaging elements or stacked imaging elements are arranged, a plurality of pixels are formed in a two-dimensional array or regularly arranged in the X direction and the Y direction. In the case where the planar shape of each pixel is a rectangle, the extension direction of the side closest to the first electrode is set to the Y direction, and the direction orthogonal to the Y direction is set to the X direction. Alternatively, in the case where the planar shape of each pixel is a desired shape, the approximate direction including the straight line or curve closest to the first electrode is set to the Y direction, and the direction orthogonal to the Y direction is set to the X direction.

[0312] In the following description, the image pickup elements of the first to sixth configurations are described in the case where the potential of the first electrode is higher than the potential of the second electrode.

[0313] In the imaging element of the first configuration, the thickness of the insulating layer segment gradually changes from the first photoelectric conversion unit segment to the Nth photoelectric conversion unit segment. However, the thickness of the insulating layer segment preferably gradually increases, and a charge transfer gradient is formed by this change. In addition, when |V 12 |≥|V 11 |, the nth photoelectric conversion unit segment can store more charge than the n+1th photoelectric conversion unit segment and apply a strong electric field, thereby reliably preventing the charge from flowing from the first photoelectric conversion unit segment to the first electrode. In addition, when |V 22 |<|V 21 |, it is possible to reliably ensure that charges flow from the first photoelectric conversion unit segment to the first electrode and to reliably ensure that charges flow from the (n+1)th photoelectric conversion unit segment to the nth photoelectric conversion unit segment.

[0314] In the imaging element of the second configuration, the thickness of the photoelectric conversion layer segment gradually changes from the first photoelectric conversion unit segment to the Nth photoelectric conversion unit segment. However, the thickness of the photoelectric conversion layer segment preferably gradually increases, and a charge transfer gradient is formed by this change. In addition, when V 12 ≥V 11 , the electric field applied to the nth photoelectric conversion unit segment is stronger than the electric field applied to the n+1th photoelectric conversion unit segment, thereby reliably preventing the charge from flowing from the first photoelectric conversion unit segment to the first electrode. In addition, when V 22 <V 21 When the charge is reliably ensured to flow from the first photoelectric conversion unit segment to the first electrode, the charge can be reliably ensured to flow from the (n+1)th photoelectric conversion unit segment to the nth photoelectric conversion unit segment.

[0315] In the imaging element of the third configuration, the material forming the insulating layer segments is different between adjacent photoelectric conversion unit segments, thereby forming a charge transfer gradient. However, preferably, the value of the relative dielectric constant of the material forming the insulating layer segments gradually decreases from the first photoelectric conversion unit segment to the Nth photoelectric conversion unit segment. When this configuration is adopted, when V 12 ≥V 11 , the nth photoelectric conversion unit segment can subsequently store more charge than the (n+1)th photoelectric conversion unit segment. In addition, when V 22 <V 21 When the charge flows from the first photoelectric conversion unit segment to the first electrode, the charge flows from the (n+1)th photoelectric conversion unit segment to the nth photoelectric conversion unit segment can be reliably ensured.

[0316] In the image pickup element of the fourth configuration, the material forming the charge storage electrode segment is different between adjacent photoelectric conversion unit segments, thereby forming a charge transfer gradient. However, preferably, the value of the work function of the material forming the insulating layer segment gradually increases from the first photoelectric conversion unit segment to the Nth photoelectric conversion unit segment. When this configuration is adopted, a potential gradient that is conducive to signal charge transfer can be formed regardless of whether the voltage is positive or negative.

[0317] In the imaging element of the fifth configuration, the area of ​​the charge storage electrode segment gradually decreases from the first photoelectric conversion unit segment to the Nth photoelectric conversion unit segment, and thereby a charge transfer gradient is formed. 12 ≥V 11 , the nth photoelectric conversion unit segment can store more charge than the (n+1)th photoelectric conversion unit segment. In addition, when V 22 <V 21 When the charge flows from the first photoelectric conversion unit segment to the first electrode, the charge flows from the (n+1)th photoelectric conversion unit segment to the nth photoelectric conversion unit segment can be reliably ensured.

[0318] In the imaging element of the sixth configuration, the cross-sectional area of ​​the stacked portion changes depending on the distance from the first electrode, and thereby a charge transfer gradient is formed. Specifically, in a configuration in which the thickness of the cross section of the stacked portion is uniform while the width of the cross section of the stacked portion is smaller at a position farther from the first electrode, when V 12 ≥V 11 When V is greater than V, as in the above-mentioned fifth configuration of the imaging element, the region closer to the first electrode can accumulate more charge than the region farther from the first electrode. 22 <V 21 When V is 1.5 V, it is possible to reliably ensure that charges flow from a region closer to the first electrode to the first electrode, and to reliably ensure that charges flow from a region farther away to a region closer to the first electrode. On the other hand, in a configuration in which the width of the cross section of the stacked portion is uniform while the thickness of the cross section of the stacked portion (or specifically, the thickness of the insulating layer segment) gradually increases, when V is 1.5 V during charge accumulation, 12 ≥V 11 When V is greater than 1.5 V, the area closer to the first electrode can accumulate more charge than the area farther from the first electrode, and a stronger electric field is applied to the area closer to the first electrode. Therefore, as in the imaging element of the first configuration described above, it is possible to reliably prevent charge from flowing from the area closer to the first electrode to the first electrode. 22 <V 21When V is 1.5 V, it is possible to reliably ensure that charges flow from a region closer to the first electrode to the first electrode, and to reliably ensure that charges flow from a region farther away to a region closer to the first electrode. In addition, in a configuration in which the thickness of the photoelectric conversion layer segment gradually increases, as in the imaging element of the second configuration described above, when V is 1.5 V during charge accumulation, 12 ≥V 11 When V is applied to a region closer to the first electrode, a stronger electric field can be applied to a region closer to the first electrode than to a region farther away from the first electrode, and charge can be reliably prevented from flowing from the region closer to the first electrode to the first electrode. 22 <V 21 When the first electrode is connected to the first electrode, it is then possible to reliably ensure that charges flow from a region closer to the first electrode, and to reliably ensure that charges flow from a region farther away to a region closer to the first electrode.

[0319] A modified example of the imaging device according to the first or second embodiment of the present disclosure may be an imaging device including:

[0320] a plurality of imaging elements having any of the first to sixth structures,

[0321] an image pickup element block formed of a plurality of image pickup elements, and

[0322] A first electrode is shared by a plurality of imaging elements constituting the imaging element block. For convenience, an imaging device having such a configuration is referred to as a "first configuration imaging device". Alternatively, a modified example of the imaging device according to the first or second embodiment of the present disclosure may be an imaging device including:

[0323] a plurality of imaging elements having any of the first to sixth configurations, or a plurality of stacked imaging elements including at least one imaging element having any of the first to sixth configurations,

[0324] an image pickup element block formed of a plurality of image pickup elements or a stacked image pickup element, and

[0325] The first electrode is shared by a plurality of imaging elements or stacked imaging elements constituting the imaging element block. For convenience, the imaging device having such a configuration is referred to as a "second configuration imaging device". In addition, in the case where the first electrode is shared by a plurality of imaging elements constituting the imaging element block as described above, the configuration and structure in the pixel region where the plurality of imaging elements are arranged can be simplified and miniaturized.

[0326] In the first and second configurations of the imaging device, a floating diffusion layer is provided for a plurality of imaging elements (or an imaging element block). Here, the plurality of imaging elements provided for a floating diffusion layer may be formed by a plurality of first-type imaging elements, or may be formed by at least one first-type imaging element and one or more second-type imaging elements. Then, the timing during charge transfer is appropriately controlled so that a plurality of imaging elements can share a floating diffusion layer. The plurality of imaging elements operate in conjunction with each other and are connected to a drive circuit as an imaging element block. In other words, a plurality of imaging elements constituting the imaging element block are connected to a drive circuit. However, charge storage electrode control is performed for each imaging element. In addition, a plurality of imaging elements may share a contact hole portion. With respect to the layout relationship between the first electrode shared by a plurality of imaging elements and the charge storage electrode of each imaging element, in some cases, the first electrode may be arranged adjacent to the charge storage electrode of each imaging element. Alternatively, the first electrode is arranged adjacent to the charge storage electrode of one of the plurality of imaging elements, and not adjacent to the charge storage electrodes of the remaining plurality of imaging elements. In this case, the charge is transferred from the plurality of remaining image pickup elements to the first electrode through one of the plurality of image pickup elements. In order to ensure that the charge is transferred from each image pickup element to the first electrode, the distance between the charge storage electrode of the image pickup element and the charge storage electrode of another image pickup element (for convenience, referred to as "distance A") is preferably longer than the distance between the first electrode and the charge storage electrode in the image pickup element adjacent to the first electrode (for convenience, referred to as "distance B"). In addition, the farther the image pickup element is located from the first electrode, the greater the value of distance A is preferably.

[0327] Two or more types of image pickup elements in the above-mentioned first to sixth configurations may be combined as desired.

[0328] In addition, in the camera device of the present disclosure including the above-mentioned various preferred modes and configurations, light can enter from the second electrode side, and the light shielding film can be formed on the light incident side closer to the second electrode. Alternatively, light can enter from the second electrode side, while the light does not enter the first electrode (or in some cases, does not enter the first electrode and the transmission control electrode). In addition, in this case, the light shielding film can be formed on the light incident side closer to the second electrode and formed above the first electrode (or in some cases, the first electrode and the transmission control electrode). Alternatively, an on-chip microlens can be provided above the charge storage electrode and the second electrode, and the light entering the on-chip microlens can be gathered to the charge storage electrode. Here, the light shielding film can be arranged above the surface of the light incident side of the second electrode, or can be arranged on the surface of the light incident side of the second electrode. In some cases, the light shielding film can be formed in the second electrode. Examples of materials forming the light shielding film include chromium (Cr), copper (Cu), aluminum (Al), tungsten (W), and opaque resins (e.g., polyimide resins). The light shielding layer formed in the optical black area can have a configuration and structure similar to that of the light shielding film.

[0329] Furthermore, in the first and second configurations of the imaging devices, one on-chip microlens may be disposed above one imaging device of the present disclosure, etc. Alternatively, the imaging element block may be formed of two imaging devices of the present disclosure, etc., and one on-chip microlens may be disposed above the imaging element block.

[0330] Specific examples of the imaging device and the like of the present disclosure include: an imaging element (for convenience, referred to as a “first type blue light imaging element”) including a photoelectric conversion layer or a photoelectric conversion unit (for convenience, referred to as a “first type blue light photoelectric conversion layer” or a “first type blue light photoelectric conversion unit”) that absorbs blue light (light of 425 nm to 495 nm) and is sensitive to blue light; an imaging element (for convenience, referred to as a “first type green light photoelectric conversion layer” or a “first type green light photoelectric conversion unit”) including a photoelectric conversion layer or a photoelectric conversion unit (for convenience, referred to as a “first type green light photoelectric conversion layer” or a “first type green light photoelectric conversion unit”) An imaging element (for convenience, referred to as a “first type green light imaging element”) including a photoelectric conversion layer or a photoelectric conversion unit that absorbs green light (light of 495nm to 570nm) and is sensitive to green light; and an imaging element (for convenience, referred to as a “first type red light photoelectric conversion layer” or a “first type red light photoelectric conversion unit”) that absorbs red light (light of 620nm to 780nm) and is sensitive to red light. In addition, in a conventional imaging element that does not include any charge storage electrode, for convenience, an imaging element that is sensitive to blue light is referred to as a "second type blue light imaging element", for convenience, an imaging element that is sensitive to green light is referred to as a "second type green light imaging element", for convenience, an imaging element that is sensitive to red light is referred to as a "second type red light imaging element", for convenience, a photoelectric conversion layer or a photoelectric conversion unit that forms a second type blue light imaging element is referred to as a "second type blue light photoelectric conversion layer" or a "second type blue light photoelectric conversion unit", for convenience, a photoelectric conversion layer or a photoelectric conversion unit that forms a second type green light imaging element is referred to as a "second type green light photoelectric conversion layer" or a "second type green light photoelectric conversion unit", and for convenience, a photoelectric conversion layer or a photoelectric conversion unit that forms a second type red light imaging element is referred to as a "second type red light photoelectric conversion layer" or a "second type red light photoelectric conversion unit".

[0331] The stacked image pickup element according to the present disclosure includes at least one image pickup element (photoelectric conversion element) according to the present disclosure, and specifically has:

[0332] [A] A configuration and structure in which a first-type blue photoelectric conversion unit, a first-type green photoelectric conversion unit, and a first-type red photoelectric conversion unit are stacked in a vertical direction, and

[0333] The respective control units of the first type blue light imaging element, the first type green light imaging element, and the first type red light imaging element are arranged in the semiconductor substrate;

[0334] [B] A configuration and structure in which a first-type blue photoelectric conversion unit and a first-type green photoelectric conversion unit are stacked in a vertical direction,

[0335] The second type red light photoelectric conversion unit is arranged below the two first type photoelectric conversion units, and

[0336] The respective control units of the first type blue light imaging element, the first type green light imaging element, and the second type red light imaging element are arranged in the semiconductor substrate;

[0337] [C] A configuration and structure in which the second-type blue photoelectric conversion unit and the second-type red photoelectric conversion unit are arranged below the first-type green photoelectric conversion unit, and

[0338] Respective control units of the first type green light imaging element, the second type blue light imaging element, and the second type red light imaging element are arranged in the semiconductor substrate; or

[0339] [D] A configuration and structure in which the second type green photoelectric conversion unit and the second type red photoelectric conversion unit are arranged below the first type blue photoelectric conversion unit, and

[0340] For example, the respective control units of the first type blue light imaging element, the second type green light imaging element, and the second type red light imaging element are arranged in a semiconductor substrate. The arrangement order of the photoelectric conversion units of these imaging elements in the vertical direction is preferably as follows: from the direction of light incidence, a blue light photoelectric conversion unit, a green light photoelectric conversion unit, and a red light photoelectric conversion unit, or from the direction of light incidence, a green light photoelectric conversion unit, a blue light photoelectric conversion unit, and a red light photoelectric conversion unit. This is because shorter wavelength light is more effectively absorbed on the incident surface side. Since red has the longest wavelength among the three colors, the red light photoelectric conversion unit is preferably arranged in the bottom layer when viewed from the light incident surface. The stacked structure formed by these imaging elements forms a pixel. In addition, a first type near-infrared light photoelectric conversion unit (or infrared light photoelectric conversion unit) may be included. Here, for example, the photoelectric conversion layer of the first type infrared light photoelectric conversion unit is composed of an organic material, and it is preferably arranged in the bottom layer of the stacked structure of the first type imaging element and above the second type imaging element. Alternatively, the second type near-infrared light photoelectric conversion unit (or the infrared light photoelectric conversion unit) may be arranged below the first type photoelectric conversion unit.

[0341] For example, in the first type imaging element, the first electrode is formed on an interlayer insulating layer provided on a semiconductor substrate. The imaging element formed on the semiconductor substrate may be a back-illuminated type or a front-illuminated type.

[0342] In the case where the photoelectric conversion layer is composed of an organic material, the photoelectric conversion layer may have one of the following four modes:

[0343] (1) Formed by p-type organic semiconductor;

[0344] (2) formed by n-type organic semiconductor;

[0345] (3) formed by a stacked structure of a p-type organic semiconductor layer and an n-type organic semiconductor layer,

[0346] It is formed by a stacked structure of a p-type organic semiconductor layer, a mixed layer of a p-type organic semiconductor and an n-type organic semiconductor (bulk heterostructure), and an n-type organic semiconductor layer.

[0347] A stacked structure of a p-type organic semiconductor layer and a mixed layer of a p-type organic semiconductor and an n-type organic semiconductor (bulk heterostructure), or

[0348] formed of a stacked structure of an n-type organic semiconductor layer and a mixed layer (bulk heterostructure) of a p-type organic semiconductor and an n-type organic semiconductor; and

[0349] (4) Formed of a mixed layer of a p-type organic semiconductor and an n-type organic semiconductor (bulk heterostructure) However, the stacking order may be appropriately changed in each configuration.

[0350] Examples of p-type organic semiconductors include naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, pyrene derivatives, perylene derivatives, tetracene derivatives, pentacene derivatives, quinacridone derivatives, thiophene derivatives, thienothiophene derivatives, benzothiophene derivatives, benzothienobenzothiophene derivatives, triallylamine derivatives, carbazole derivatives, chrysene derivatives, Derivatives, fluoranthene derivatives, phthalocyanine derivatives, subphthalocyanine derivatives, subporphyrazine derivatives, metal complexes having heterocyclic compounds as ligands, polythiophene derivatives, polybenzothiadiazole derivatives, and polyfluorene derivatives, etc. Examples of n-type organic semiconductors include fullerenes and fullerene derivatives (e.g., fullerenes (higher order fullerenes) such as C60, C70, and C74, and endohedral fullerenes) or fullerene derivatives (e.g., fullerene fluorides, PCBM fullerene compounds, and fullerene polymers, etc.), organic semiconductors having larger (deeper) HOMO and LUMO than p-type organic semiconductors, and transparent inorganic metal oxides. Specific examples of n-type organic semiconductors include heterocyclic compounds containing nitrogen atoms, oxygen atoms and sulfur atoms, for example, pyridine derivatives, pyrazine derivatives, pyrimidine derivatives, triazine derivatives, quinoline derivatives, quinoxaline derivatives, isoquinoline derivatives, acridine derivatives, phenazine derivatives, phenanthroline derivatives, tetrazole derivatives, pyrazole derivatives, imidazole derivatives, thiazole derivatives, oxazole derivatives, benzimidazole derivatives, benzotriazole derivatives, benzoxazole derivatives, carbazole derivatives, benzofuran derivatives, dibenzofuran derivatives, porphyrin derivatives, polyphenylene vinylene derivatives, polybenzothiadiazole derivatives, organic molecules containing polyfluorene derivatives and the like as part of a molecular skeleton, organic metal complexes, and subphthalocyanine derivatives. Examples of the group contained in the fullerene derivative include: a halogen atom; a linear, branched or cyclic alkyl group or a phenyl group; a group containing a linear or condensed aromatic compound; a group containing a halide; a partially fluorinated alkyl group; a perfluoroalkyl group; a silyl alkyl group; a silyl alkoxy group; an aryl silyl group; an aryl sulfanyl group; an alkyl sulfanyl group; an aryl sulfonyl group; an alkylsulfonyl group; an aryl sulfide group; an alkylsulfide group; an amino group; an alkylamino group; an arylamino group; a hydroxyl group; an alkoxy group; an acylamino group; an acyloxy group; a carbonyl group; a carboxyl group; a carboxamide group; an alkoxycarbonyl group; an acyl group; a sulfonyl group; a cyano group; a nitro group; a group containing a chalcogenide; a phosphine group; a phosphono ... group); and derivatives of these materials.For example, the thickness of a photoelectric conversion layer formed of an organic material (also referred to as an "organic photoelectric conversion layer" in some cases) is not limited to any particular value, but may be 1×10. -8 m to 5×10 -7 m, preferably 2.5×10 -8 m to 3×10 -7 m, more preferably 2.5×10 -8 m to 2×10 -7 m, or even more preferably 1×10 -7 m to 1.8×10 -7 m. It should be noted that organic semiconductors are generally classified as p-type or n-type. P-type means that holes can be easily transported, and n-type means that electrons can be easily transported. Unlike inorganic semiconductors, organic semiconductors cannot be interpreted as containing holes or electrons as thermally excited bulk carriers.

[0351] Alternatively, examples of materials forming an organic photoelectric conversion layer for photoelectric conversion of green light include rhodamine dyes, merocyanine dyes, quinacridone derivatives, and subphthalocyanine dyes (subphthalocyanine derivatives), etc. Examples of materials forming an organic photoelectric conversion layer for photoelectric conversion of blue light include coumaric acid dyes, tris-8-hydroxyquinoline aluminum (Alq3), and merocyanine dyes, etc. Examples of materials forming an organic photoelectric conversion layer for photoelectric conversion of red light include phthalocyanine dyes and subphthalocyanine dyes (subphthalocyanine derivatives).

[0352] Alternatively, examples of inorganic materials forming the photoelectric conversion layer include: crystalline silicon, amorphous silicon, microcrystalline silicon, crystalline selenium, amorphous selenium, and the following compound semiconductors: chalcopyrite compounds such as CIGS (CuInGaSe), CIS (CuInSe2), CuInS2, CuAlS2, CuAlSe2, CuGaS2, CuGaSe2, AgAlS2, AgAlSe2, AgInS2 and AgInSe2, III-V compounds such as GAs, InP, AlGAs, InGaP, AlGaInP and InGAsP, and such as CdSe, CdS, In2Se3, In2S3, Bi2Se3, Bi2S3, ZnSe, ZnS, PbSe, or PbS, etc. In addition, quantum dots composed of these materials can be used for the photoelectric conversion layer.

[0353] Alternatively, the photoelectric conversion layer may have a stacked structure formed by a lower semiconductor layer and an upper photoelectric conversion layer. By providing a lower semiconductor layer, recombination during charge accumulation can be prevented, the transfer efficiency of the charge stored in the photoelectric conversion layer to the first electrode can be improved, and the generation of dark current can be reduced. The material forming the upper photoelectric conversion layer only needs to be appropriately selected from the above-mentioned various materials that can form the photoelectric conversion layer. On the other hand, the material forming the lower semiconductor layer is preferably a material having a large band gap value (for example, a band gap value of 3.0 eV or more) and having a higher mobility than the mobility of the material forming the photoelectric conversion layer. Specific examples thereof include: oxide semiconductor materials such as IGZO; transition metal dihalides; silicon carbide; diamond; graphene; carbon nanotubes; and organic semiconductor materials such as fused polycyclic hydrocarbon compounds and fused heterocyclic compounds. Alternatively, in the case where the accumulated charge is an electron, the material forming the lower semiconductor layer may be a material having an ionization potential higher than the ionization potential of the material forming the photoelectric conversion layer. In the case where the accumulated charges are holes, the material forming the lower semiconductor layer may be a material having an electron affinity lower than that of the material forming the photoelectric conversion layer. Alternatively, the impurity concentration in the material forming the lower semiconductor layer is preferably equal to or less than 1×10 18 cm -3 The lower semiconductor layer may have a single layer structure or a multi-layer structure. In addition, the material forming the lower semiconductor layer located above the charge storage electrode may be different from the material forming the lower semiconductor layer located above the first electrode.

[0354] The single-panel color image pickup device may be formed of the image pickup device according to the first or second embodiment of the present disclosure.

[0355] The imaging device of the present disclosure including a stacked imaging element is different from the imaging device including a Bayer array imaging element (in other words, the color separation of blue, green and red is not performed using a color filter layer). In this imaging device, in the same pixel, imaging elements sensitive to light of multiple wavelengths are stacked in the light incident direction to form one pixel. Therefore, the sensitivity can be increased, and the pixel density per unit volume can also be increased. In addition, organic materials have a high absorption coefficient. Therefore, the thickness of the organic photoelectric conversion layer can be smaller than that of a conventional silicon-based photoelectric conversion layer. Therefore, light leakage from adjacent pixels and restrictions on the light incident angle are reduced. In addition, in conventional silicon-based imaging elements, false colors appear because interpolation processing is performed between three-color pixels to generate color signals. On the other hand, in a solid-state imaging device according to the second embodiment of the present disclosure including a stacked imaging element, the generation of false colors is reduced. Since the organic photoelectric conversion layer is also used as a color filter layer, color separation can be performed without any color filter layer.

[0356] On the other hand, in the imaging device of the present disclosure including an imaging element that is not a stacked imaging element, the use of a color filter layer can alleviate the requirements for the spectral characteristics of blue, green, and red, and achieve high mass production. Examples of arrays of imaging elements include not only a Bayer array, but also an inter-row array, a G-striped RB square array, a G-striped RB complete square array, a square complementary color array, a stripe array, an oblique striped array, a primary color difference array, a field color difference sequence array, a frame color difference sequence array, a MOS type array, an improved MOS type array, a frame interlaced array, and a field interlaced array. Here, one imaging element forms one pixel (or sub-pixel).

[0357] For example, the color filter layer (wavelength selection means) may be a color filter layer that transmits not only red, green, and blue but also, in some cases, specific wavelengths of cyan, magenta, yellow, etc. The color filter layer is not necessarily formed of a color filter layer based on an organic material using an organic compound such as a pigment or a dye, but may be formed of a photonic crystal, a wavelength selection element using plasmon (for example, refer to Japanese Patent Application Publication No. 2008-177191: a color filter layer having a conductive grid structure by providing a grid-shaped hole structure in a conductive film), or a thin film including an inorganic material such as amorphous silicon.

[0358] In the camera device of the present disclosure including the above-mentioned various preferred embodiments and configurations, light is received, photoelectric conversion occurs in the photoelectric conversion layer, and carriers are separated into holes and electrons. Then, the electrode for extracting holes is set as an anode, and the electrode for extracting electrons is set as a cathode. In some embodiments, the first electrode can form an anode and the second electrode forms a cathode, and conversely in some embodiments, the first electrode can form a cathode and the second electrode forms an anode.

[0359] In the case of forming a stacked imaging element, the first electrode, the charge storage electrode, the transfer control electrode, the charge discharge electrode, and the second electrode may be formed of a transparent conductive material. In some cases, the first electrode, the charge storage electrode, the transfer control electrode, and the charge discharge electrode are collectively referred to as "first electrode, etc.". Alternatively, for example, in the case where the imaging device of the present disclosure has a planar arrangement such as a Bayer array, the second electrode may be formed of a transparent conductive material, and the first electrode, etc. may be formed of a metal material. In this case, specifically, the second electrode located on the light incident side may be formed of a transparent conductive material, and, for example, the first electrode, etc. may be formed of, for example, Al-Nd (an alloy of aluminum and neodymium) or ASC (an alloy of aluminum, samarium, and copper). In some cases, an electrode formed of a transparent conductive material is referred to as a "transparent electrode." Here, the band gap energy of the transparent conductive material is preferably 2.5 eV or more, and more preferably 3.1 eV or more. Examples of transparent conductive materials that form transparent electrodes include conductive metal oxides. Specifically, these examples include: indium oxide, indium tin oxide (including ITO, Indium TinOxide, In2O3 doped with Sn, crystalline ITO and amorphous ITO), indium zinc oxide (IZO) in which indium is added as a dopant to zinc oxide, indium gallium oxide (IGO) in which indium is added as a dopant to gallium oxide, indium gallium zinc oxide (IGZO, In-GaZnO4) in which indium and gallium are added as dopants to zinc oxide, indium tin zinc oxide (ITZO) in which indium and tin are added as dopants to zinc oxide, IFO (F-doped In2O3), tin oxide (SnO2), ATO (Sb-doped SnO2), FTO (F-doped SnO2), zinc oxide (including ZnO doped with other elements), aluminum zinc oxide (AZO) in which aluminum is added as a dopant to zinc oxide, gallium zinc oxide (GZO) in which gallium is added as a dopant to zinc oxide, titanium oxide (TiO2), niobium titanium oxide (TNO) in which niobium is added as a dopant to titanium oxide, antimony oxide, spinel type oxides, and oxides having a YbFe2O4 structure. Alternatively, the transparent electrode may have a base layer including gallium oxide, titanium oxide, niobium oxide, nickel oxide, etc. The thickness of the transparent electrode may be 2×10 -8 m to 2×10 -7 m, preferably 3×10 -8 m to 1×10 -7 m. In the case where the first electrode needs to have transparency, the charge discharge electrode is also preferably formed of a transparent conductive material from the viewpoint of simplifying the manufacturing process.

[0360] Alternatively, when transparency is not required, the conductive material forming the anode having a function as a hole extraction electrode is preferably a conductive material with a high work function (e.g., ), and specific examples of the conductive material include gold (Au), silver (Ag), chromium (Cr), nickel (Ni), palladium (Pd), platinum (Pt), iron (Fe), iridium (Ir), germanium (Ge), osmium (Os), rhenium (Re), and tellurium (Te). On the other hand, the conductive material forming the cathode having a function as an electrode for extracting electrons is preferably a material having a low work function (e.g., The conductive material may be a conductive material having a voltage of 4.5 eV to 4.5 eV, and specific examples of the conductive material include: alkali metals (e.g., Li, Na, K, etc.) and fluorides or oxides thereof, alkaline earth metals (e.g., Mg, Ca, etc.) and fluorides or oxides thereof, aluminum (Al), zinc (Zn), tin (Sn), thallium (Tl), sodium potassium alloys, aluminum lithium alloys, magnesium silver alloys, and rare earth metals such as indium or ytterbium or alloys thereof. Alternatively, examples of materials forming the anode or cathode include: metals such as platinum (Pt), gold (Au), palladium (Pd), chromium (Cr), nickel (Ni), aluminum (Al), silver (Ag), tantalum (Ta), tungsten (W), copper (Cu), titanium (Ti), indium (In), tin (Sn), iron (Fe), cobalt (Co), molybdenum (Mo), etc.; alloys containing these metal elements; conductive particles containing these metals; conductive particles containing alloys of these metals; polycrystalline silicon containing impurities; carbon-based materials; oxide semiconductor materials; carbon nanotubes; and conductive materials such as graphene. The cathode may also be formed of a stacked structure containing these elements. In addition, the material forming the anode or cathode may be an organic material (conductive polymer) such as poly(3,4-ethylenedioxythiophene) / polystyrene sulfonate (PEDOT / PSS: poly(3,4-ethylenedioxythiophene) / polystyrene sulfonate). Alternatively, any of these conductive materials may be mixed with a binder (polymer) to form a paste or ink, and the paste or ink may then be cured to be used as an electrode.

[0361] The film forming method for forming the first electrode etc. and the second electrode (anode or cathode) can be a dry method or a wet method. The example of the dry method includes physical vapor deposition (PVD method) and chemical vapor deposition (CVD method). The example of the film forming method using the PVD method principle includes vacuum vapor deposition, electron beam (EB) vapor deposition, various sputtering methods (magnetron sputtering, RF-DC coupled bias sputtering, ECR sputtering, opposing target sputtering and radio frequency sputtering), ion plating, laser ablation, molecular beam epitaxy and laser transfer. In addition, the example of the CVD method includes plasma CVD method, thermal CVD method, organic metal (MO) CVD method and optical CVD method. On the other hand, the example of the wet method includes electrolytic plating and electroless plating, spin coating, inkjet, spraying, stamping, micro-contact printing, flexographic printing, offset printing, gravure printing, impregnation, etc. Examples of patterning methods include shadow mask technique, laser transfer, chemical etching such as photolithography, and physical etching using ultraviolet light, laser, etc. The planarization technique for the first electrode and the second electrode may be a laser planarization method, a reflow method, a chemical mechanical polishing (CMP) method, etc.

[0362] Examples of materials for forming the insulating layer include inorganic materials that are usually metal oxide high dielectric insulating materials, such as silicon oxide materials; silicon nitride (SiN Y ); aluminum oxide (Al2O3), but also includes organic insulating materials (organic polymers), which are generally straight-chain hydrocarbons having a functional group capable of bonding to a control electrode at one end, such as: polymethyl methacrylate (PMMA); polyvinyl phenol (PVP); polyvinyl alcohol (PVA); polyimide; polycarbonate (PC); polyethylene terephthalate (PET); polystyrene; silanol derivatives (silane coupling agents) such as N-2 (aminoethyl) 3-aminopropyltrimethoxysilane (AEAPTMS), 3-mercaptopropyltrimethoxysilane (MPTMS) and octadecyltrichlorosilane (OTS); novolac-type phenol resin; fluorocarbon resin; octadecyl mercaptan; and dodecyl isocyanate, etc. Combinations of these materials may also be used. Examples of silicon oxide materials include silicon oxide (SiO X), BPSG, PSG, BSG, AsSG, PbSG, silicon oxynitride (SiON), spin-on glass (SOG), and low dielectric constant insulating materials (such as polyarylether, cycloperfluorocarbon polymer and benzocyclobutene, cyclofluorocarbon resin, polytetrafluoroethylene, fluorinated arylether, fluorinated polyimide, amorphous carbon, and organic SOG). The insulating layer can be formed by a single layer, or by a stacked plurality of layers (for example, two layers). In the latter case, the insulating layer / lower layer is formed at least on the charge storage electrode and in the region between the charge storage electrode and the first electrode, and the insulating layer / lower layer is planarized. In this way, the insulating layer / lower layer remains in the region between the charge storage electrode and the first electrode, and the insulating layer / upper layer is formed on the remaining insulating layer / lower layer and the charge storage electrode. Therefore, the insulating layer can be reliably planarized. It is only necessary to appropriately select the materials for forming the various interlayer insulating layers, the upper insulating layer, and the insulating material film from these materials.

[0363] The configuration and structure of the floating diffusion layer, the amplifying transistor, the reset transistor and the selecting transistor constituting the control unit may be similar to those of a conventional floating diffusion layer, a conventional amplifying transistor, a conventional reset transistor and a conventional selecting transistor. The driving circuit may also have a well-known configuration and structure.

[0364] The first electrode is connected to the floating diffusion layer and the gate portion of the amplifying transistor, but only a contact hole portion needs to be formed to connect the first electrode to the floating diffusion layer and the gate portion of the amplifying transistor. Examples of materials forming the contact hole portion include: polysilicon doped with impurities; high melting point metals such as tungsten, Ti, Pt, Pd, Cu, TiW, TiN, TiNW, WSi2, MoSi2, etc.; metal silicide; and a stacked structure formed of these materials (e.g., Ti / TiN / W).

[0365] The first carrier blocking layer may be disposed between the organic photoelectric conversion layer and the first electrode, or the second carrier blocking layer may be disposed between the organic photoelectric conversion layer and the second electrode. In addition, the first charge injection layer may be disposed between the first carrier blocking layer and the first electrode, or the second charge injection layer may be disposed between the second carrier blocking layer and the second electrode. For example, the material forming the electron injection layer may be an alkali metal such as lithium (Li), sodium (Na) or potassium (K), and its fluoride and oxide, an alkaline earth metal such as magnesium (Mg) and calcium (Ca), and its fluoride and oxide.

[0366] Examples of film forming methods for forming various organic layers include dry film forming methods and wet film forming methods. Examples of dry film forming methods include: resistance heating or radio frequency heating, vacuum vapor deposition using electron beam heating, flash vapor deposition, plasma vapor deposition, EB vapor deposition, various sputtering methods (bipolar sputtering, DC sputtering, DC magnetron sputtering, radio frequency sputtering, magnetron sputtering, RF-DC coupled bias sputtering, ECR sputtering, facing target sputtering, radio frequency sputtering, and ion beam sputtering), direct current (DC) method, RF method, multi-cathode method, activation reaction method, electric field deposition method, various ion plating methods such as radio frequency ion plating and reactive ion plating, laser ablation, molecular beam epitaxy, laser transfer, and molecular beam epitaxy (MBE). In addition, examples of CVD methods include plasma CVD, thermal CVD, MOCVD, and optical CVD. On the other hand, specific examples of the wet method include various printing methods such as spin coating, dipping, casting, microcontact printing, drop casting, screen printing, inkjet printing, offset printing, gravure printing, and flexographic printing, and various coating methods such as stamping, spraying, air knife coating, blade coating, rod coating, knife coating, extrusion coating, reverse roll coating, transfer roll coating, gravure coating, kiss coating, cast coating, spraying, slit hole coating, and calendar coating. For example, in the coating method, a non-polar or low-polar organic solvent such as toluene, chloroform, hexane, and ethanol can be used as a solvent. Examples of the patterning method include a shadow mask technique, laser transfer, chemical etching such as photolithography, and physical etching using ultraviolet light, laser, etc. A planarization technique for various organic layers may be a laser planarization method, a reflow method, and the like.

[0367] As described above, in an imaging element or imaging device, an on-chip microlens and a light shielding layer can be provided as needed, and a driving circuit and wiring for driving the imaging element can be provided. If necessary, a shutter for controlling incident light of the imaging element can be provided, and the imaging device can include an optical cutoff filter according to its purpose.

[0368] For example, in the case where an imaging device and a readout integrated circuit (ROIC) are stacked, a drive substrate on which the readout integrated circuit and a connection portion made of copper (Cu) are formed is stacked with an imaging element on which a connection portion is formed so that the connection portions are in contact with each other and the connection portions are bonded to each other. In this way, the imaging device and the readout integrated circuit can be stacked, and the connection portions can be bonded to each other by solder bumps or the like.

[0369] On the other hand, the driving method of the imaging device according to the first or second embodiment of the present disclosure may be a method of driving the imaging device by repeating the following steps:

[0370] In all the imaging elements, while the charges are accumulated in the photoelectric conversion layer, the charges in the first electrode are simultaneously released from the system;

[0371] Thereafter, in all the image pickup elements, the charges accumulated in the photoelectric conversion layer are simultaneously transferred to the first electrode; and

[0372] After the transfer is completed, the charge transferred to the first electrode in each imaging element is sequentially read out.

[0373] In this driving method of the imaging device, each imaging element has a structure in which light incident from the second electrode side does not enter the first electrode, and in all imaging elements, the charge in the first electrode is released from the system while the charge is accumulated in the photoelectric conversion layer. Therefore, the first electrode can be reliably reset in all imaging elements at the same time. Thereafter, the charge accumulated in the photoelectric conversion layer is simultaneously transferred to the first electrode in all imaging elements, and after the transfer is completed, the charge transferred to the first electrode in each imaging element is sequentially read out. Therefore, the so-called global shutter function can be easily realized.

[0374] [Example 8]

[0375] Example 8 is a variation of Examples 1 to 7. Fig.18 A schematic partial cross-sectional view showing an image pickup element-A included in the image pickup device of Example 8. Fig.19 and Fig. 20 An equivalent circuit diagram of an imaging element-A included in the imaging device of Example 8 is shown. Fig.21 A schematic layout diagram of a first electrode, a charge storage electrode, and a transistor constituting a control unit included in the image pickup device of Example 8 is shown. Fig. 22 A schematic layout diagram showing a first electrode and a charge storage electrode in an image pickup element-A included in the image pickup device of Example 8. Fig.23A schematic perspective view of a first electrode, a charge storage electrode, a second electrode, and a contact hole portion in an imaging element-A included in an imaging device of Example 8 is shown. Note that imaging element-B and imaging element-C have a configuration and structure that are substantially similar to those of imaging element-A. In the following description, imaging element-A, imaging element-B, and imaging element-C are collectively referred to as "imaging elements".

[0376] Specifically, the imaging element of Embodiment 1 is a back-illuminated imaging element and has a structure in which three imaging elements are stacked. The three imaging elements are: a green light imaging element of Embodiment 1 of the first type, which includes a first type green light photoelectric conversion layer that absorbs green light and is sensitive to green light (hereinafter, the imaging element is referred to as the "first imaging element"); a conventional blue light imaging element of the second type, which includes a second type blue light photoelectric conversion layer that absorbs blue light and is sensitive to blue light (hereinafter, the imaging element is referred to as the "second imaging element"); and a conventional red light imaging element of the second type, which includes a second type red light photoelectric conversion layer that absorbs red light and is sensitive to red light (hereinafter, the imaging element is referred to as the "third imaging element"). Here, the red light imaging element (third imaging element) and the blue light imaging element (second imaging element) are arranged in the semiconductor substrate 70, and the second imaging element is located closer to the light incident side than the third imaging element. In addition, the green light imaging element (first imaging element) is arranged above the blue light imaging element (second imaging element). One pixel is formed by a stacked structure of a first imaging element, a second imaging element, and a third imaging element. No color filter layer is provided.

[0377] In Example 8 or Example 9 and subsequent embodiments, as in Example 5, the photoelectric conversion layer 23 in the effective pixel area and the optical black area has a two-layer structure formed by an organic semiconductor material layer 23A and an oxide semiconductor material layer 23B. However, the photoelectric conversion layer 23 in the effective pixel area and the optical black area does not necessarily have such a structure, but may have a single-layer structure formed by an organic semiconductor material layer. The construction and structure of the first imaging element are substantially similar to the construction and structure of each imaging element-A described in Example 1, and therefore, the construction and structure of the first imaging element are not described here. The photoelectric conversion layer 23 is formed by a layer containing a known organic photoelectric conversion material (such as an organic material such as a rhodamine dye, a merocyanine dye, or a quinacridone) that is sensitive to at least green light.

[0378] In Embodiment 8, as described above, the first imaging element is formed by the imaging element described in Embodiment 1. In addition, the p+ layer 44 is provided between the n-type semiconductor region 43 and the front surface 70A of the semiconductor substrate 70 to reduce the generation of dark current. The p+ layer 42 is formed between the n-type semiconductor region 41 and the n-type semiconductor region 43, and in addition, a part of the side surface of the n-type semiconductor region 43 is surrounded by the p+ layer 42. The p+ layer 73 is formed on one side of the rear surface 70B of the semiconductor substrate 70, and the HfO2 film 74 and the insulating material film 75 are formed in the part extending from the p+ layer 73 to the formation area of ​​the contact hole portion 61 in the semiconductor substrate 70.

[0379] The second imaging element includes a photoelectric conversion layer which is an n-type semiconductor region 41 provided in a semiconductor substrate 70. The transfer transistor TR2 formed of a vertical transistor trs The gate portion 45 of the semiconductor substrate 70 extends to the n-type semiconductor region 41 and is connected to the transfer gate line TG2. In addition, the second floating diffusion layer FD2 is arranged in the transfer transistor TR2 in the semiconductor substrate 70. trs The charges stored in the n-type semiconductor region 41 are read out to the second floating diffusion layer FD2 via the transfer channel formed along the gate portion 45 .

[0380] In the second imaging element, a reset transistor TR2 constituting a control unit of the second imaging element is further provided on the first surface side of the semiconductor substrate 70. rst , Amplifier transistor TR2 amp and select transistor TR2 sel .

[0381] Reset transistor TR2 rst It includes a gate portion, a channel formation region, and a source / drain region. Reset transistor TR2 rst The gate portion of the reset transistor TR2 is connected to the reset line RST2. rst One of the source / drain regions is connected to the power supply V DD And the other source / drain region also functions as a second floating diffusion layer FD2.

[0382] Amplifier transistor TR2 amp The gate portion is connected to the reset transistor TR2. rst Another source / drain region (second floating diffusion layer FD2) of the PDMS layer. In addition, one of the source / drain regions is connected to the power supply V DD .

[0383] Select transistor TR2 selThe transistor includes a gate portion, a channel forming region, and a source / drain region. The gate portion is connected to a selection line SEL2. In addition, one of the source / drain regions is connected to a transistor that forms an amplifier TR2. amp The other source / drain region shares a region, and the other source / drain region is connected to the signal line (data output line) VSL2.

[0384] The third imaging element includes a photoelectric conversion layer as an n-type semiconductor region 43 provided in a semiconductor substrate 70. The transfer transistor TR3 trs The gate portion 46 of the semiconductor substrate 70 is connected to the transfer gate line TG3. In addition, the third floating diffusion layer FD3 is arranged near the transfer transistor TR3 in the semiconductor substrate 70. trs The charges stored in the n-type semiconductor region 43 are read out to the third floating diffusion layer FD3 via a transfer channel 46A formed along the gate portion 46 .

[0385] In the third imaging element, a reset transistor TR3 constituting a control unit of the third imaging element is further arranged on the first surface side of the semiconductor substrate 70. rst , Amplifier transistor TR3 amp and select transistor TR3 sel .

[0386] Reset transistor TR3 rst It includes a gate portion, a channel formation region, and a source / drain region. Reset transistor TR3 rst The gate portion is connected to the reset line RST3, and the reset transistor TR3 rst One of the source / drain regions is connected to the power supply V DD , and the other source / drain region also serves as a third floating diffusion layer FD3.

[0387] Amplifier transistor TR3 amp The gate portion is connected to the reset transistor TR3. rst Another source / drain region (third floating diffusion layer FD3) of the PDMS layer. In addition, one of the source / drain regions is connected to the power supply V DD .

[0388] Select transistor TR3 sel The transistor includes a gate portion, a channel forming region, and a source / drain region. The gate portion is connected to a selection line SEL3. In addition, one of the source / drain regions is connected to a transistor forming an amplifier TR3. amp The other source / drain region shares a region, and the other source / drain region is connected to a signal line (data output line) VSL3.

[0389] Reset lines RST1, RST2 and RST3, selection lines SEL1, SEL2 and SEL3 and transfer gate lines TG2 and TG3 are connected to a vertical drive circuit 312 forming a drive circuit, and signal lines (data output lines) VSL1, VSL2 and VSL3 are connected to a column signal processing circuit 313 forming a drive circuit.

[0390] Fig.24 An equivalent circuit diagram of a modified example of the imaging element-A included in the imaging device of Example 8 is shown, and Fig.25 Schematic layout diagram of the first electrode, the charge storage electrode and the transistor constituting the control unit is shown. Fig.24 and Fig.25 As shown, the reset transistor TR1 rst The other source / drain region 51B may be grounded instead of being connected to the power supply V DD .

[0391] For example, the imaging element of Example 8 can be manufactured by the following method. Specifically, first, an SOI substrate is prepared. Then, a first silicon layer is formed on the surface of the SOI substrate by an epitaxial growth method, and p is formed in the first silicon layer. + Next, a second silicon layer is formed on the first silicon layer by an epitaxial growth method, and an element isolation region 71, an oxide film 72, a p-type semiconductor region 41 are formed in the second silicon layer. + layer 42, n-type semiconductor region 43 and p + Layer 44. In addition, various transistors and the like constituting the control unit of the imaging element are formed in the second silicon layer, and a wiring layer 62, an interlayer insulating layer 76 and various wirings are formed thereon. Thereafter, the interlayer insulating layer 76 and a supporting substrate (not shown) are bonded to each other. Thereafter, the SOI substrate is removed to expose the first silicon layer. The surface of the second silicon layer corresponds to the front surface 70A of the semiconductor substrate 70, and the surface of the first silicon layer corresponds to the rear surface 70B of the semiconductor substrate 70. In addition, the first silicon layer and the second silicon layer are collectively referred to as a semiconductor substrate 70. Then, an opening for forming the contact hole portion 61 is formed on the rear surface 70B side of the semiconductor substrate 70, and a HfO2 film 74, an insulating material film 75 and a contact hole portion 61 are formed. In addition, pad portions 63 and 64, an interlayer insulating layer 81, connection holes 65 and 66, a first electrode 21, a charge storage electrode 24 and an insulating layer 82 are formed. Next, an opening is formed in the connection portion 67, and the oxide semiconductor material layer 23B, the organic semiconductor material layer 23A, the second electrode 22, the upper insulating layer 83 (83A and 83B), the light shielding layer 15, and the on-chip microlens 14 are formed. In this way, the imaging element of Example 8 can be obtained.

[0392] In addition, although not shown in the figure, the insulating layer 82 may have a two-layer structure including an insulating layer / lower layer and an insulating layer / upper layer. That is, the insulating layer / lower layer is formed at least on the charge storage electrode 24 and in the region between the charge storage electrode 24 and the first electrode 21 (more specifically, the insulating layer / lower layer is formed on the interlayer insulating layer 81 including the charge storage electrode 24), and a planarization process is performed on the insulating layer / lower layer. Thereafter, an insulating layer / upper layer is formed on the insulating layer / lower layer and the charge storage electrode 24. Therefore, the insulating layer 82 can be reliably planarized. Then, an opening can be formed in the insulating layer 82 thus obtained, thereby forming the connection portion 67.

[0393] [Example 9]

[0394] Example 9 is a variation of Example 8. Fig.26 A schematic partial cross-sectional view of an imaging element-A included in the imaging device of Example 9 is shown. The imaging element of Example 9 is a front-illuminated imaging element, and has a structure in which three imaging elements are stacked. The three imaging elements are: a first type of green light imaging element (first imaging element) of Example 8, which includes a first type of green light photoelectric conversion layer that absorbs green light and is sensitive to green light; a second type of conventional blue light imaging element (second imaging element), which includes a second type of blue light photoelectric conversion layer that absorbs blue light and is sensitive to blue light; and a second type of conventional red light imaging element (third imaging element), which includes a second type of red light photoelectric conversion layer that absorbs red light and is sensitive to red light. Here, the red light imaging element (third imaging element) and the blue light imaging element (second imaging element) are arranged in a semiconductor substrate 70, and the second imaging element is located closer to the light incident side than the third imaging element. In addition, the green light imaging element (first imaging element) is arranged above the blue light imaging element (second imaging element).

[0395] As in Embodiment 8, various transistors constituting the control unit are provided on the front surface 70A side of the semiconductor substrate 70. These transistors may have a configuration and structure substantially similar to those of the transistors described in Embodiment 8. In addition, the second imaging element and the third imaging element are provided in the semiconductor substrate 70, and these imaging elements may have a configuration and structure substantially similar to those of the second imaging element and the third imaging element described in Embodiment 8.

[0396] An interlayer insulating layer 81 is formed above the front surface 70A of the semiconductor substrate 70, and a photoelectric conversion unit (first electrode 21, oxide semiconductor material layer 23B, organic semiconductor material layer 23A, second electrode 22, charge storage electrode 24, etc.) including a charge storage electrode that forms the imaging element of Example 8 is arranged above the interlayer insulating layer 81.

[0397] As described above, the configuration and structure of the imaging element of Example 9 may be similar to those of the imaging element of Example 8 except that it is a front-illuminated type, and thus will not be described in detail here.

[0398] [Example 10]

[0399] Example 10 is a variation of Examples 8 and 9.

[0400] Fig. 27 A schematic partial cross-sectional view of a back-illuminated image pickup element of Embodiment 10 is shown. The image pickup element has a structure in which two image pickup elements of a first type as Embodiment 8 and a second type as a second image pickup element are stacked. In addition, Fig.28 A schematic partial cross-sectional view of a modification of the image pickup element of Embodiment 10 is shown. This modification is a front-illuminated image pickup element, and has a structure in which two image pickup elements, a first image pickup element of the first type and a second image pickup element of the second type, are stacked. Here, the first image pickup element absorbs primary color light, and the second image pickup element absorbs complementary color light. Alternatively, the first image pickup element absorbs white light, and the second image pickup element absorbs infrared rays.

[0401] Instead of one photoelectric conversion unit including the first type charge storage electrode of Embodiment 8, two photoelectric conversion units may be stacked (in other words, two photoelectric conversion units each including a charge storage electrode may be stacked, and a control unit for the two photoelectric conversion units may be provided in the semiconductor substrate). Alternatively, three photoelectric conversion units may be stacked (in other words, three photoelectric conversion units each including a charge storage electrode may be stacked, and a control unit for the three photoelectric conversion units may be provided in the semiconductor substrate). An example of a stacked structure formed by the first type imaging element and the second type imaging element is shown in the following table.

[0402]

[0403] [Example 11]

[0404] Embodiment 11 is a modification of Embodiments 8 to 10, and relates to an image pickup device or the like including a transfer control electrode (charge transfer electrode). Fig.29 A schematic partial cross-sectional view showing a part of the image pickup element of Example 11. Fig.30 and Fig.31 An equivalent circuit diagram of the imaging element of Example 11 is shown. Fig.32 A schematic layout diagram showing a first electrode, a transfer control electrode, and a charge storage electrode constituting a photoelectric conversion unit of an image pickup element of Example 11, and a transistor constituting a control unit. Fig.33 and Fig.34The potential states at various parts during operation of the image pickup element of Embodiment 11 are schematically shown. Fig. 16B An equivalent circuit diagram of each part of the imaging element of Example 11 is shown. Fig.35 A schematic layout diagram showing a first electrode, a transfer control electrode, and a charge storage electrode constituting a photoelectric conversion unit of an image pickup element of Example 11. Fig.36 A schematic perspective view of a first electrode, a transfer control electrode, a charge storage electrode, a second electrode, and a contact hole portion is shown.

[0405] In the imaging element of Example 11, a transfer control electrode (charge transfer electrode) 25 is further provided between the first electrode 21 and the charge storage electrode 24. The transfer control electrode 25 is arranged at a certain distance from the first electrode 21 and the charge storage electrode 24, and is positioned to face the oxide semiconductor material layer 23B via the insulating layer 82. The transfer control electrode 25 is connected to the first electrode 21 via the connection hole 68B formed in the interlayer insulating layer 81, the pad portion 68A, and the wiring V OT It is connected to the pixel driving circuit forming the driving circuit. It should be noted that in order to simplify the drawing, various image pickup element components located below the interlayer insulating layer 81 are collectively denoted by reference numeral 13 for convenience.

[0406] In the following instructions, refer to Fig.33 and Fig.34 The operation of the image pickup element (first image pickup element) of Embodiment 11 is described. It should be noted that the value of the potential applied to the charge storage electrode 24 is different from the value at point P D The potential value at Fig.33 and Fig.34 Different between.

[0407] During the charge accumulation period, the driver circuit sets the potential V 11 applied to the first electrode 21, the potential V 12 is applied to the charge storage electrode 24 and the potential V 13 The light incident on the organic semiconductor material layer 23A causes photoelectric conversion in the organic semiconductor material layer 23A. The holes generated by the photoelectric conversion are transmitted through the wiring V OU On the other hand, since the potential of the first electrode 21 is higher than that of the second electrode 22, or, for example, a positive potential is applied to the first electrode 21 and a negative potential is applied to the second electrode 22, V 12 >V 13 (For example, V 12 >V 11 >V 13 or V 11 >V 12 >V 13). Therefore, the electrons generated by the photoelectric conversion are attracted to the charge storage electrode 24 and stay in the region of the oxide semiconductor material layer 23B etc. facing the charge storage electrode 24. That is, the charge is accumulated in the oxide semiconductor material layer 23B etc. 12 >V 13 , thus electrons generated in the organic semiconductor material layer 23A can be reliably prevented from moving toward the first electrode 21. As time of photoelectric conversion elapses, the potential in the region of the oxide semiconductor material layer 23B and the like facing the charge storage electrode 24 becomes a more negative value.

[0408] A reset operation is performed at the latter stage of the charge accumulation period. Therefore, the potential of the first floating diffusion layer FD1 is reset, and the potential of the first floating diffusion layer FD1 becomes equal to the potential V DD .

[0409] After the reset operation is completed, the charge is read out. In other words, during the charge transfer period, the driver circuit sets the potential V 21 Applied to the first electrode, the potential V 22 is applied to the charge storage electrode 24 and the potential V 23 is applied to the transmission control electrode 25. Here, V 22 ≤V 23 ≤V 21 (Preferably V 22 <V 23 <V 21 ). When the potential V 13 When applied to the transmission control electrode 25, it is only necessary to satisfy V 22 ≤V 13 ≤V 21 (Preferably V 22 <V 13 <V 21 ). Therefore, the electrons remaining in the region of the oxide semiconductor material layer 23B etc. facing the charge storage electrode 24 are reliably read out to the first electrode 21, and further read out to the first floating diffusion layer FD1. In other words, the charges accumulated in the oxide semiconductor material layer 23B etc. are read out to the control unit.

[0410] In the above-described manner, a series of operations including charge accumulation, reset operation, and charge transfer are completed.

[0411] After the electrons are read out to the first floating diffusion layer FD1, the amplifying transistor TR1 amp and select transistor TR1 selThe operation is the same as that of a conventional amplifying transistor and a selecting transistor. In addition, for example, a series of operations including charge accumulation, reset operation, and charge transfer performed in the second imaging element and the third imaging element are similar to a series of conventional operations including charge accumulation, reset operation, and charge transfer.

[0412] Fig.37 FIG. 1 shows a schematic layout diagram of a first electrode, a charge storage electrode, and a transistor constituting a control unit of a modified example of the imaging element of Example 11. Fig.37 As shown, the reset transistor TR1 rst The other source / drain region 51B can be grounded instead of connected to the power supply V DD .

[0413] [Example 12]

[0414] Embodiment 12 is a modification of Embodiments 8 to 11, and relates to an image pickup device or the like including a charge discharge electrode. Fig.38 A schematic partial cross-sectional view showing a part of the image pickup element of Example 12. Fig.39 The configuration of the image pickup element of Embodiment 12 is shown as a schematic layout diagram of a first electrode of a photoelectric conversion unit including a charge storage electrode, a charge storage electrode, and a charge discharge electrode. Fig.40 A schematic perspective view of a first electrode, a charge storage electrode, a charge discharge electrode, a second electrode, and a contact hole portion is shown.

[0415] In the imaging element of Example 12, a charge discharge electrode 26 is also provided. The charge discharge electrode 26 is connected to the oxide semiconductor material layer 23B via the connecting portion 69, and is arranged at a certain distance from the first electrode 21 and the charge storage electrode 24. Here, the charge discharge electrode 26 is arranged to surround the first electrode 21 and the charge storage electrode 24 (or in a frame-like shape). The charge discharge electrode 26 is connected to a pixel driving circuit forming a driving circuit. The oxide semiconductor material layer 23B extends in the connecting portion 69. In other words, the oxide semiconductor material layer 23B extends in the second opening 86 formed in the insulating layer 82 and is connected to the charge discharge electrode 26. The charge discharge electrode 26 is shared (becomes common) by a plurality of imaging elements.

[0416] In Example 12, during the charge accumulation period, the drive circuit sets the potential V 11 applied to the first electrode 21, the potential V 12 is applied to the charge storage electrode 24 and the potential V 14The light incident on the organic semiconductor material layer 23A causes photoelectric conversion in the organic semiconductor material layer 23A. The holes generated by the photoelectric conversion are transferred to the organic semiconductor material layer 23A via the wiring V OU On the other hand, since the potential of the first electrode 21 is higher than that of the second electrode 22, or, for example, a positive potential is applied to the first electrode 21 and a negative potential is applied to the second electrode 22, V 14 >V 11 (For example, V 12 >V 14 >V 11 ). Therefore, the electrons generated by the photoelectric conversion are attracted to the charge storage electrode 24 and stay in the region of the oxide semiconductor material layer 23B etc. facing the charge storage electrode 24. Therefore, it is possible to reliably prevent the movement of the electrons to the first electrode 21. However, the electrons that are not sufficiently attracted to the charge storage electrode 24 or the electrons that are not accumulated in the oxide semiconductor material layer 23B etc. (so-called overflow electrons) are transmitted to the drive circuit via the charge discharge electrode 26.

[0417] A reset operation is performed at the latter stage of the charge accumulation period. Therefore, the potential of the first floating diffusion layer FD1 is reset, and the potential of the first floating diffusion layer FD1 becomes equal to the potential V DD .

[0418] After the reset operation is completed, the charge is read out. In other words, during the charge transfer period, the driver circuit sets the potential V 21 applied to the first electrode 21, the potential V 22 is applied to the charge storage electrode 24, and the potential V 24 is applied to the charge discharge electrode 26. Here, V 24 <V 21 (For example, V 24 <V 22 <V 21 ). Therefore, the electrons remaining in the region of the oxide semiconductor material layer 23B etc. facing the charge storage electrode 24 are reliably read out to the first electrode 21 and further read out to the first floating diffusion layer FD1. In other words, the charges accumulated in the oxide semiconductor material layer 23B etc. are read out to the control unit.

[0419] In the above-described manner, a series of operations including charge accumulation, reset operation, and charge transfer are completed.

[0420] After the electrons are read out to the first floating diffusion layer FD1, the amplifying transistor TR1 amp and select transistor TR1 selThe operation is the same as that of a conventional amplifying transistor and a selecting transistor. In addition, for example, a series of operations including charge accumulation, a reset operation, and charge transfer performed in the second imaging element and the third imaging element are similar to a series of conventional operations including charge accumulation, a reset operation, and charge transfer.

[0421] In Embodiment 12, so-called overflow electrons are transferred to the drive circuit via the charge discharge electrode 26, so that leakage to the charge storage portion of the adjacent pixel can be reduced and blooming can be prevented. Therefore, the imaging performance of the imaging element can be improved.

[0422] [Example 13]

[0423] Embodiment 13 is a modification of Embodiments 8 to 12, and relates to an image pickup device or the like including a plurality of charge storage electrode segments.

[0424] Fig.41 A schematic partial cross-sectional view showing a part of the image pickup element of Example 13. Fig.42 and Fig.43 An equivalent circuit diagram of the imaging element of Example 13 is shown. Fig.44 The configuration of the image pickup element of Embodiment 13 is shown as a schematic layout diagram of a first electrode and a charge storage electrode of a photoelectric conversion unit including a charge storage electrode, and a transistor constituting a control unit. Fig.45 and Fig.46 The potential states at various parts during operation of the image pickup element of Embodiment 13 are schematically shown. Fig. 16C An equivalent circuit diagram of each part of the imaging element of Example 13 is shown. Fig.47 The configuration of the image pickup element of Example 13 is shown as a schematic layout diagram of a first electrode of a photoelectric conversion unit including a charge storage electrode and a charge storage electrode. Fig.48 A schematic perspective view of a first electrode, a charge storage electrode, a second electrode, and a contact hole portion is shown.

[0425] In Embodiment 13, the charge storage electrode 24 is formed of a plurality of charge storage electrode segments 24A, 24B, and 24C. The number of the charge storage electrode segments only needs to be two or more, and is "3" in Embodiment 13. Also, for example, in the image pickup element of Embodiment 13, the potential of the first electrode 21 is higher than the potential of the second electrode 22, or a positive potential is applied to the first electrode 21 and a negative potential is applied to the second electrode 22. Also, during charge transfer, the potential applied to the charge storage electrode segment 24A closest to the first electrode 21 is higher than the potential applied to the charge storage electrode segment 24C farthest from the first electrode 21. When such a potential gradient is formed in the charge storage electrode 24, the electrons remaining in the region of the oxide semiconductor material layer 23B and the like facing the charge storage electrode 24 are read out to the first electrode 21 and further to the first floating diffusion layer FD1 with higher reliability. In other words, the charge accumulated in the oxide semiconductor material layer 23B and the like is read out to the control unit.

[0426] exist Fig.45 In the example shown, during charge transfer, the potential of the charge storage electrode segment 24C < the potential of the charge storage electrode segment 24B < the potential of the charge storage electrode segment 24A. With this arrangement, electrons remaining in the region of the oxide semiconductor material layer 23B and the like are simultaneously read out into the first floating diffusion layer FD1. Fig.46 In the example shown, during the charge transfer, the potential of the charge storage electrode segment 24C, the potential of the charge storage electrode segment 24B, and the potential of the charge storage electrode segment 24A gradually change (in other words, change in a stepwise or ramp-like manner). With this arrangement, the electrons remaining in the region of the oxide semiconductor material layer 23B etc. facing the charge storage electrode segment 24C are reliably moved to the region of the oxide semiconductor material layer 23B etc. facing the charge storage electrode segment 24B, and then the electrons remaining in the region of the oxide semiconductor material layer 23B etc. facing the charge storage electrode segment 24B are reliably moved to the region of the oxide semiconductor material layer 23B etc. facing the charge storage electrode segment 24A, and then the electrons remaining in the region of the oxide semiconductor material layer 23B etc. facing the charge storage electrode segment 24A are reliably read out into the first floating diffusion layer FD1.

[0427] Fig.49 FIG. 1 shows a schematic layout diagram of a first electrode, a charge storage electrode, and a transistor of a control unit constituting a modified example of an imaging element of Example 13. Fig.49 As shown, the reset transistor TR1 rst The other source / drain region 51B can be grounded instead of connected to the power supply V DD .

[0428] [Example 14]

[0429] Embodiment 14 is a modification of Embodiments 8 to 13, and relates to the image pickup element of the first configuration and the sixth configuration.

[0430] Fig.50 A schematic partial cross-sectional view of an image pickup element according to Example 14 is shown. Fig.51 Schematic partial enlarged cross-sectional view of a portion in which a charge storage electrode, an inorganic oxide semiconductor material layer, an organic semiconductor material layer, and a second electrode are stacked. Fig.19 and Fig. 20 The equivalent circuit diagram of the imaging element of the embodiment 8 is similar. The schematic layout diagram of the imaging element of the embodiment 14 including the first electrode of the photoelectric conversion unit of the charge storage electrode and the charge storage electrode and the transistor constituting the control unit is similar to that of the reference. Fig.21 The schematic layout diagram of the image pickup element of the embodiment 8 described above is similar. In addition, the operation of the image pickup element (first image pickup element) of the embodiment 14 is basically similar to the operation of the image pickup element of the embodiment 8.

[0431] Here, in the imaging element of Example 14 or the imaging elements of Examples 15 to 19 described below,

[0432] The photoelectric conversion unit is formed by N (N≥2) photoelectric conversion unit segments (specifically, three photoelectric conversion unit segments 10'1, 10'2, 10'3),

[0433] The oxide semiconductor material layer 23B and the organic semiconductor material layer 23A are formed of N photoelectric conversion layer segments (specifically, three photoelectric conversion layer segments 23'1, 23'2, and 23'3), and

[0434] The insulating layer 82 is formed of N insulating layer segments (specifically, three insulating layer segments 82 ′ 1 , 82 ′ 2 , and 82 ′ 3 ).

[0435] In Embodiments 14 to 16, the charge storage electrode 24 is formed by N charge storage electrode segments (specifically, three charge storage electrode segments 24'1, 24'2, 24'3 in each example).

[0436] In Embodiment 17 and Embodiment 18, and in some cases in Embodiment 16, the charge storage electrode 24 is formed of N charge storage electrode segments (specifically, three charge storage electrode segments 24'1, 24'2, and 24'3) arranged separately from each other,

[0437] The nth (where n=1, 2, 3, . . . , N) photoelectric conversion unit segment 10 ′ n By the nth charge storage electrode segment 24' n, nth insulating layer segment 82' n and the nth photoelectric conversion layer segment 23' n Formed, and

[0438] The photoelectric conversion unit segment with a larger n value is farther from the first electrode 21. Here, the photoelectric conversion layer segments 23'1, 23'2, and 23'3 refer to segments formed by stacking an organic semiconductor material layer and an inorganic oxide semiconductor material layer, but are shown as one layer in the drawings for simplicity. The same applies in the following description.

[0439] It should be noted that in the photoelectric conversion layer segment, the thickness of the photoelectric conversion layer portion can be changed, and the thickness of the inorganic oxide semiconductor material layer portion can be constant to change the thickness of the photoelectric conversion layer segment. The thickness of the photoelectric conversion layer portion can be constant, and the thickness of the inorganic oxide semiconductor material layer portion can be changed to change the thickness of the photoelectric conversion layer segment. The thickness of the photoelectric conversion layer portion can be changed, and the thickness of the inorganic oxide semiconductor material layer portion can be changed to change the thickness of the photoelectric conversion layer segment.

[0440] Alternatively, the image pickup element of Embodiment 14 or the image pickup element of Embodiment 15 or Embodiment 18 described below further includes a photoelectric conversion unit in which the first electrode 21 , the oxide semiconductor material layer 23B, the organic semiconductor material layer 23A, and the second electrode 22 are stacked.

[0441] The photoelectric conversion unit further includes a charge storage electrode 24 which is arranged at a distance from the first electrode 21 and is positioned to face the oxide semiconductor material layer 23B via the insulating layer 82 .

[0442] When the stacking direction of the charge storage electrode 24, the insulating layer 82, the oxide semiconductor material layer 23B and the organic semiconductor material layer 23A is the Z direction, and the direction away from the first electrode 21 is the X direction, the cross-sectional area of ​​the stacked portion of the charge storage electrode 24, the insulating layer 82, the oxide semiconductor material layer 23B and the organic semiconductor material layer 23A cut along the YZ virtual plane varies according to the distance from the first electrode.

[0443] In the imaging element of Example 14, the thickness of the insulating layer segment is from the first photoelectric conversion unit segment 10'1 to the Nth photoelectric conversion unit segment 10'1. N Gradually changes. Specifically, the thickness of the insulating layer segment gradually increases. Alternatively, in the imaging element of Example 14, the width of the cross section of the stacked portion is constant, and the thickness of the cross section of the stacked portion (specifically, the thickness of the insulating layer segment) gradually increases according to the distance from the first electrode 21. It should be noted that the thickness of the insulating layer segment increases stepwise. In the nth photoelectric conversion unit segment 10' nInsulation layer segment 82' n The thickness is constant. In the nth photoelectric conversion unit segment 10' n Insulation layer segment 82' n When the thickness is "1", in the (n+1)th photoelectric conversion unit segment 10' (n+1) Insulation layer segment 82' (n+1) The thickness of can be, for example, a value between 2 and 10, but is not limited to this value. In Embodiment 14, the thickness of the charge storage electrode segments 24'1, 24'2, and 24'3 is gradually reduced, so that the thickness of the insulating layer segments 82'1, 82'2, and 82'3 is gradually increased. The thickness of the photoelectric conversion layer segments 23'1, 23'2, and 23'3 is constant.

[0444] Hereinafter, the operation of the image pickup element of Embodiment 14 will be described.

[0445] During the charge accumulation period, the driver circuit sets the potential V 11 is applied to the first electrode 21, and the potential V 12 The light incident on the organic semiconductor material layer 23A causes photoelectric conversion in the organic semiconductor material layer 23A. The holes generated by the photoelectric conversion are connected to the charge storage electrode 24 via the wiring V OU On the other hand, since the potential of the first electrode 21 is higher than that of the second electrode 22, or, for example, a positive potential is applied to the first electrode 21 and a negative potential is applied to the second electrode 22, V 12 ≥V 11 , or preferably V 12 >V 11 Therefore, the electrons generated by the photoelectric conversion are attracted to the charge storage electrode 24 and stay in the region of the oxide semiconductor material layer 23B and the like facing the charge storage electrode 24. That is, the charges are accumulated in the oxide semiconductor material layer 23B and the like. 12 >V 11 , therefore, the electrons generated in the photoelectric conversion layer 23A will not move toward the first electrode 21. As time of photoelectric conversion elapses, the potential in the region of the oxide semiconductor material layer 23B and the like facing the charge storage electrode 24 becomes a more negative value.

[0446] The image pickup element of Example 14 has a configuration in which the thickness of the insulating layer segments gradually increases. Therefore, during charge accumulation, when V 12 ≥V 11 When the (n+1)th photoelectric conversion unit segment 10' (n+1) In comparison, the nth photoelectric conversion unit segment 10' nMore charges can be stored, and a strong electric field is applied, so that charges can be reliably prevented from flowing from the first photoelectric conversion unit segment 10 ′ 1 to the first electrode 21 .

[0447] A reset operation is performed at the latter stage of the charge accumulation period. Therefore, the potential of the first floating diffusion layer FD1 is reset, and the potential of the first floating diffusion layer FD1 becomes equal to the potential V of the power supply. DD .

[0448] After the reset operation is completed, the charge is read out. In other words, during the charge transfer period, the driver circuit sets the potential V 21 The potential V is applied to the first electrode 21. 22 is applied to the charge storage electrode 24. Here, V 21 >V 22 Therefore, the electrons remaining in the region of the oxide semiconductor material layer 23B etc. facing the charge storage electrode 24 are read out to the first electrode 21 and further to the first floating diffusion layer FD1. In other words, the charges accumulated in the oxide semiconductor material layer 23B etc. are read out to the control unit.

[0449] More specifically, when V 21 >V 22 When the charge flows from the first photoelectric conversion unit segment 10'1 to the first electrode 21, the charge flows from the (n+1)th photoelectric conversion unit segment 10'1 to the first electrode 21. (n+1) Flows to the nth photoelectric conversion unit segment 10' n .

[0450] In the above-described manner, a series of operations including charge accumulation, reset operation, and charge transfer are completed.

[0451] In the imaging element of Example 14, since the thickness of the insulating layer segment gradually changes from the 1st photoelectric conversion unit segment to the Nth photoelectric conversion unit segment, or since the cross-sectional area of ​​the stacked portion of the charge storage electrode, the insulating layer, the inorganic oxide semiconductor material layer and the organic semiconductor material layer taken along the YZ virtual plane changes according to the distance from the first electrode, a charge transfer gradient is formed, and the charge generated by the photoelectric conversion can be transferred more easily and reliably.

[0452] The image pickup element of Example 14 can be manufactured by a method basically similar to the method of manufacturing the image pickup element of Example 8, and therefore, a detailed description thereof will not be given here.

[0453] It should be noted that in the image pickup element of Embodiment 14, in order to form the first electrode 21, the charge storage electrode 24, and the insulating layer 82, a conductive material layer for forming the charge storage electrode 24'3 is first formed on the interlayer insulating layer 81, and patterning is performed on the conductive material layer to leave the conductive material layer in the region where the photoelectric conversion unit segments 10'1, 10'2, and 10'3 and the first electrode 21 are to be formed. In this way, a portion of the first electrode 21 and the charge storage electrode 24'3 can be obtained. Then, an insulating layer for forming the insulating layer segment 82'3 is formed on the entire surface, and patterning and planarization are performed on the insulating layer to obtain the insulating layer segment 82'3. Then, a conductive material layer for forming the charge storage electrode 24'2 is formed on the entire surface, and patterning is performed on the conductive material layer to leave the conductive material layer in the region where the photoelectric conversion unit segments 10'1 and 10'2 and the first electrode 21 are to be formed. In this way, a portion of the first electrode 21 and the charge storage electrode 24'2 can be obtained. Then, an insulating layer for forming the insulating layer segment 82'2 is formed on the entire surface, and patterning and planarization are performed on the insulating layer to obtain the insulating layer segment 82'2. Then, a conductive material layer for forming the charge storage electrode 24'1 is formed on the entire surface, and patterning is performed on the conductive material layer to leave the conductive material layer in the region where the photoelectric conversion unit segment 10'1 and the first electrode 21 will be formed. In this way, the first electrode 21 and the charge storage electrode 24'1 can be obtained. Then, an insulating layer is formed on the entire surface and planarization is performed to obtain the insulating layer segment 82'1 (insulating layer 82). Then, an oxide semiconductor material layer 23B and an organic semiconductor material layer 23A are formed on the insulating layer 82. Thus, the photoelectric conversion unit segments 10'1, 10'2, and 10'3 can be obtained.

[0454] Fig.52 FIG. 1 shows a schematic layout diagram of a first electrode, a charge storage electrode, and transistors constituting a control unit of a modified example of an imaging element of Example 14. Fig.52 As shown, the reset transistor TR1 rst The other source / drain region 51B may be grounded without being connected to the power supply V DD .

[0455] [Example 15]

[0456] The image pickup element of Example 15 relates to the image pickup elements according to the second configuration and the sixth configuration of the present disclosure. Fig.53 1 is a schematic partial cross-sectional view showing an enlarged view of a portion in which a charge storage electrode, an inorganic oxide semiconductor material layer, an organic semiconductor material layer, and a second electrode are stacked. Fig.53As shown, in the imaging element of Example 15, the thickness of the photoelectric conversion layer segment is from the first photoelectric conversion unit segment 10'1 to the Nth photoelectric conversion unit segment 10' N Alternatively, in the imaging element of Embodiment 15, the width of the cross section of the stacked portion is constant, and the thickness of the cross section of the stacked portion (or specifically, the thickness of the photoelectric conversion layer segment) gradually increases according to the distance from the first electrode 21. More specifically, the thickness of the photoelectric conversion layer segment gradually increases. It should be noted that the thickness of the photoelectric conversion layer segment increases stepwise. In the nth photoelectric conversion unit segment 10' n Photoelectric conversion layer segment 23' n The thickness is constant. In the nth photoelectric conversion unit segment 10' n Photoelectric conversion layer segment 23' n When the thickness is "1", in the (n+1)th photoelectric conversion unit segment 10' (n+1) Photoelectric conversion layer segment 23' (n+1) The thickness of can be, for example, 2 to 10, but is not limited to this value. In Embodiment 15, the thickness of the charge storage electrode segments 24'1, 24'2, and 24'3 is gradually reduced so that the thickness of the photoelectric conversion layer segments 23'1, 23'2, and 23'3 is gradually increased. The thickness of the insulating layer segments 82'1, 82'2, and 82'3 is constant. In addition, for example, in the photoelectric conversion layer segment, the thickness of the photoelectric conversion layer portion can be changed while the thickness of the inorganic oxide semiconductor material layer portion is constant. In this way, the thickness of the photoelectric conversion layer segment can be changed.

[0457] In the imaging element of Example 15, the thickness of the photoelectric conversion layer segment is gradually increased. Therefore, during the charge accumulation period, when V 12 ≥V 11 When the (n+1)th photoelectric conversion unit segment 10' (n+1) In comparison, a stronger electric field is applied to the nth photoelectric conversion unit segment 10'. n , and can reliably prevent the charge from flowing from the first photoelectric conversion unit segment 10'1 to the first electrode 21. In addition, when V 22 <V 21 When the charge flows from the first photoelectric conversion unit segment 10'1 to the first electrode 21, the charge flows from the (n+1)th photoelectric conversion unit segment 10'1 to the first electrode 21. (n+1) Flows to the nth photoelectric conversion unit segment 10' n .

[0458] As described above, in the imaging element of Example 15, since the thickness of the photoelectric conversion layer segment gradually changes from the 1st photoelectric conversion unit segment to the Nth photoelectric conversion unit segment, or since the cross-sectional area of ​​the stacked portion of the charge storage electrode, the insulating layer, the inorganic oxide semiconductor material layer and the organic semiconductor material layer taken along the YZ virtual plane changes according to the distance from the first electrode, a charge transfer gradient is formed, and the charge generated by the photoelectric conversion can be transferred more easily and reliably.

[0459] In the image pickup element of Embodiment 15, in order to form the first electrode 21, the charge storage electrode 24, the insulating layer 82, the oxide semiconductor material layer 23B, and the organic semiconductor material layer 23A, a conductive material layer for forming the charge storage electrode 24'3 is first formed on the interlayer insulating layer 81, and patterning is performed on the conductive material layer so as to leave the conductive material layer in the region where the photoelectric conversion unit segments 10'1, 10'2, and 10'3 and the first electrode 21 are to be formed. In this way, a portion of the first electrode 21 and the charge storage electrode 24'3 can be obtained. Then, a conductive material layer for forming the charge storage electrode 24'2 is formed on the entire surface, and patterning is performed on the conductive material layer so as to leave the conductive material layer in the region where the photoelectric conversion unit segments 10'1 and 10'2 and the first electrode 21 are to be formed. In this way, a portion of the first electrode 21 and the charge storage electrode 24'2 can be obtained. Then, a conductive material layer for forming the charge storage electrode 24'1 is formed on the entire surface, and patterning is performed on the conductive material layer to leave the conductive material layer in the region where the photoelectric conversion unit segment 10'1 and the first electrode 21 will be formed. In this way, the first electrode 21 and the charge storage electrode 24'1 can be obtained. Then, the insulating layer 82 is conformally formed on the entire surface. Then, the oxide semiconductor material layer 23B and the organic semiconductor material layer 23A are formed on the insulating layer 82, and a planarization process is performed on the organic semiconductor material layer 23A. Thus, the photoelectric conversion unit segments 10'1, 10'2, and 10'3 can be obtained.

[0460] [Example 16]

[0461] Example 16 relates to an imaging element having the third structure. Fig.54 FIG. 1 is a schematic partial cross-sectional view of an imaging element of Example 16. In the imaging element of Example 16, the material forming the insulating layer segment is different between adjacent photoelectric conversion unit segments. Here, the relative dielectric constant of the material forming the insulating layer segment varies from the first photoelectric conversion unit segment 10'1 to the Nth photoelectric conversion unit segment 10' NIn the imaging element of Embodiment 16, the same potential may be applied to all the N charge storage electrode segments, or different potentials may be applied to the N charge storage electrode segments, respectively. In the latter case, the charge storage electrode segments 24'1, 24'2, and 24'3 arranged separately from each other only need to be connected to the vertical drive circuit 312 forming the drive circuit via the pad portions 641, 642, and 643 in a manner similar to that described in Embodiment 17 below.

[0462] When this configuration is adopted, a charge transfer gradient is formed, and when V 12 ≥V 11 , the nth photoelectric conversion unit segment can store more charge than the (n+1)th photoelectric conversion unit segment. In addition, when V 22 <V 21 When the charge flows from the first photoelectric conversion unit segment to the first electrode, the charge flows from the (n+1)th photoelectric conversion unit segment to the nth photoelectric conversion unit segment can be reliably ensured.

[0463] [Example 17]

[0464] Example 17 relates to an image pickup element of the fourth structure. Fig.55 FIG. 1 is a schematic partial cross-sectional view of an imaging element of Embodiment 17. In the imaging element of Embodiment 17, the material forming the charge storage electrode segment is different between adjacent photoelectric conversion unit segments. Here, the value of the work function of the material forming the insulating layer segment varies from the first photoelectric conversion unit segment 10'1 to the Nth photoelectric conversion unit segment 10' N In the imaging element of Embodiment 17, the same potential may be applied to all the N charge storage electrode segments, or different potentials may be applied to the N charge storage electrode segments, respectively. In the latter case, the charge storage electrode segments 24'1, 24'2, and 24'3 are connected to the vertical drive circuit 312 forming the drive circuit via the pad portions 641, 642, and 643.

[0465] [Example 18]

[0466] The imaging element of Example 18 relates to the imaging element of the fifth structure. Fig.56A , Fig.56B , Fig.57A and Fig.57B A schematic plan view of a charge storage electrode segment in Example 18 is shown. Fig.58 The configuration of the imaging element of Example 18 is shown, including a first electrode of a photoelectric conversion unit and a charge storage electrode of a charge storage electrode, and a schematic layout diagram of a transistor constituting a control unit. Fig.55 or Fig.60 In the imaging element of the embodiment 18, the area of ​​the charge storage electrode segment is from the first photoelectric conversion unit segment 10'1 to the Nth photoelectric conversion unit segment 10' N In the imaging element of Embodiment 18, the same potential may be applied to all the N charge storage electrode segments, or different potentials may be applied to the N charge storage electrode segments, respectively. Specifically, in a manner similar to that described in Embodiment 17, the charge storage electrode segments 24'1, 24'2, and 24'3 arranged separately from each other only need to be connected to the vertical drive circuit 312 forming the drive circuit via the pad portions 641, 642, and 643.

[0467] In Embodiment 18, the charge storage electrode 24 is formed of a plurality of charge storage electrode segments 24'1, 24'2, and 24'3. The number of the charge storage electrode segments only needs to be 2 or more, and is "3" in Embodiment 18. Also, for example, in the image pickup element of Embodiment 18, the potential of the first electrode 21 is higher than the potential of the second electrode 22, or a positive potential is applied to the first electrode 21 and a negative potential is applied to the second electrode 22. Therefore, during charge transfer, the potential applied to the charge storage electrode segment 24'1 closest to the first electrode 21 is higher than the potential applied to the charge storage electrode segment 24'3 farthest from the first electrode 21. When such a potential gradient is formed in the charge storage electrode 24, the electrons remaining in the region of the oxide semiconductor material layer 23B and the like facing the charge storage electrode 24 are more reliably read out to the first electrode 21, and further read out to the first floating diffusion layer FD1. In other words, the charge accumulated in the oxide semiconductor material layer 23B and the like is read out to the control unit.

[0468] Furthermore, during the charge transfer, the potential of the charge storage electrode segment 24'3 < the potential of the charge storage electrode segment 24'2 < the potential of the charge storage electrode segment 24'1. With this arrangement, the electrons remaining in the region of the oxide semiconductor material layer 23B and the like are simultaneously read out to the first floating diffusion layer FD1. Alternatively, during the charge transfer, the potential of the charge storage electrode segment 24'3, the potential of the charge storage electrode segment 24'2, and the potential of the charge storage electrode segment 24'1 gradually change (in other words, change in a stepwise or ramp-like manner). Through this arrangement, the electrons remaining in the area of ​​the oxide semiconductor material layer 23B etc. facing the charge storage electrode segment 24'3 move to the area of ​​the oxide semiconductor material layer 23B etc. facing the charge storage electrode segment 24'2, and then the electrons remaining in the area of ​​the oxide semiconductor material layer 23B etc. facing the charge storage electrode segment 24'2 move to the area of ​​the oxide semiconductor material layer 23B etc. facing the charge storage electrode segment 24'1, and thereafter, the electrons remaining in the area of ​​the oxide semiconductor material layer 23B etc. facing the charge storage electrode segment 24'1 are reliably read out to the first floating diffusion layer FD1.

[0469] Fig.59 FIG. 1 shows a schematic layout diagram of a first electrode, a charge storage electrode, and a transistor constituting a modified example of the image pickup element of Example 18. Fig.59 As shown, reset transistor TR3 rst The other source / drain region 51B may be grounded without being connected to the power supply V DD .

[0470] In the imaging element of the embodiment 18, this structure is adopted, so that a charge transfer gradient is also formed. In other words, the area of ​​the charge storage electrode segment is from the first photoelectric conversion unit segment 10'1 to the Nth photoelectric conversion unit segment 10' N Therefore, when V 12 ≥V 11 , the nth photoelectric conversion unit segment can store more charge than the (n+1)th photoelectric conversion unit segment. In addition, when V 22 <V 21 When the charge flows from the first photoelectric conversion unit segment to the first electrode, the charge flows from the (n+1)th photoelectric conversion unit segment to the nth photoelectric conversion unit segment can be reliably ensured.

[0471] [Example 19]

[0472] Example 19 relates to an imaging element of the sixth structure. Fig.60 A schematic partial cross-sectional view of the imaging element of Example 19 is shown. Fig.61A and Fig.61B is a schematic plan view of a charge storage electrode segment in Embodiment 19. The image pickup element of Embodiment 19 includes a photoelectric conversion unit formed by stacking a first electrode 21, an oxide semiconductor material layer 23B, an organic semiconductor material layer 23A, and a second electrode 22, and the photoelectric conversion unit also includes a charge storage electrode 24 (24"1, 24"2, 24"3), which is arranged at a certain distance from the first electrode 21 and positioned to face the oxide semiconductor material layer 23B via the insulating layer 82. In addition, in a case where the stacking direction of the charge storage electrode 24 (24"1, 24"2, 24"3), the insulating layer 82, the oxide semiconductor material layer 23B, and the organic semiconductor material layer 23A is the Z direction and the direction away from the first electrode 21 is the X direction, the cross-sectional area of ​​the stacked portion of the charge storage electrode 24 (24"1, 24"2, 24"3), the insulating layer 82, the oxide semiconductor material layer 23B, and the organic semiconductor layer 23A taken along the YZ virtual plane varies depending on the distance from the first electrode 21.

[0473] Specifically, in the image pickup element of Embodiment 19, the thickness of the cross section of the stacked portion is constant, and the width of the cross section of the stacked portion is narrower at a longer distance from the first electrode 21. Note that the width may be narrowed continuously (see Fig.61A ), or can be gradually narrowed (see Fig.61B ).

[0474] As described above, in the imaging element of Example 19, since the cross-sectional area of ​​the stacked portion of the charge storage electrode 24 (24"1, 24"2, 24"3), the insulating layer 82 and the organic semiconductor material layer 23A cut along the YZ virtual plane varies according to the distance from the first electrode 21, a charge transfer gradient is formed, and the charges generated by photoelectric conversion can be transferred more easily and reliably.

[0475] Although the present disclosure has been described so far based on the preferred embodiments, the present disclosure is not limited to the embodiments. The structures, constructions, manufacturing conditions, manufacturing methods and materials for stacked imaging elements, imaging elements and imaging devices described in the embodiments are merely exemplary and may be modified as appropriate. The imaging elements of the various embodiments may be appropriately combined. For example, the imaging element of embodiment 14, the imaging element of embodiment 15, the imaging element of embodiment 16, the imaging element of embodiment 17 and the imaging element of embodiment 18 may be combined in a desired manner. The imaging element of embodiment 14, the imaging element of embodiment 15, the imaging element of embodiment 16, the imaging element of embodiment 17 and the imaging element of embodiment 19 may also be combined in a desired manner. For example, the construction and structure of the imaging element of the present disclosure may be applied to light-emitting elements such as organic EL elements. In the optical black area, as in the conventional case, a virtual imaging element may be arranged between imaging element-B and imaging element-A.

[0476] In some cases, the floating diffusion layers FD1 , FD2 , FD3 , 51C, 45C, and 46C may be shared.

[0477] For example, a modified example of the imaging element described in Example 8 is shown. Fig.62 As shown, the first electrode 21 may extend in the opening 85A formed in the insulating layer 82 and be connected to the oxide semiconductor material layer 23B.

[0478] Fig.64 4 is a conceptual diagram showing an example in which the imaging device of the present disclosure is used for an electronic device (camera) 400. The electronic device 400 includes an imaging device 401, an optical lens 410, a shutter device 411, a drive circuit 412, and a signal processing circuit 413. The optical lens 410 gathers image light (incident light) from a subject and forms an image on an imaging surface of the imaging device 401. Thus, signal charges are stored in the imaging device 401 for a certain period of time. The shutter device 411 controls the light irradiation period and the light shielding period of the imaging device 401. The drive circuit 412 provides a drive signal for controlling the transmission operation of the imaging device 401 and the shutter operation of the shutter device 411. According to the drive signal (timing signal) provided from the drive circuit 412, the imaging device 401 performs signal transmission. The signal processing circuit 413 performs various signal processing. The video signal after signal processing is stored in a storage medium such as a memory or output to a display. In such an electronic device 400, miniaturization of pixel size and improvement of transmission efficiency can be achieved in the camera device 401. Therefore, an electronic device 400 with improved pixel characteristics can be obtained. The electronic device 400 to which the camera device 401 can be applied is not necessarily a camera, but may be a camera device, for example, a camera module for a mobile device such as a digital camera or a portable phone device.

[0479] In the exemplary case described in the embodiment, the present disclosure is applied to a CMOS camera device, and in each CMOS solid-state camera device, a signal charge corresponding to the amount of incident light is detected as a unit pixel of a physical quantity and is arranged in a matrix form. However, the present disclosure is not necessarily applied to such a CMOS camera device, and can also be applied to a CCD camera device. In the latter case, the signal charge is transmitted in the vertical direction through the vertical transfer register of the CCD structure, and in the horizontal direction through the horizontal transfer register, and is amplified to output a pixel signal (image signal). In addition, the present disclosure is not necessarily applied to a general column-type camera device, in which pixels are arranged in a two-dimensional matrix and a column signal processing circuit is provided for each pixel row. In addition, in some cases, the selection transistor can also be omitted.

[0480] In addition, the imaging element in the present disclosure is not necessarily used in an imaging device that senses the distribution of visible incident light and captures the distribution as an image, but can also be used in an imaging device that captures the distribution of incident light amounts of infrared rays, X-rays, particles, etc. as an image. In addition, in a broad sense, the present disclosure can be applied to any imaging device (physical quantity distribution detection device), such as a fingerprint detection sensor, etc., which detects the distribution of other physical quantities such as pressure and capacitance and captures the distribution as an image.

[0481] In addition, the present disclosure is not limited to an imaging device that sequentially scans each unit pixel in the imaging area row by row and reads out pixel signals from each unit pixel. The present disclosure can also be applied to an XY addressing type imaging device that selects desired pixels one by one and reads out pixel signals from the selected pixels one by one. The imaging device may be in a single chip form or may be in a modular form in which the imaging area is packaged together with a driving circuit or an optical system and has an imaging function.

[0482] Furthermore, the imaging device may be incorporated into a camera system such as a digital camera or a video camera, or an electronic device such as a portable telephone device having an imaging function.

[0483] The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure can be implemented as a device installed on any type of mobile body, such as: an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility device, an airplane, a drone, a ship, or a robot.

[0484] Fig.66 is a block diagram schematically showing an exemplary configuration of a vehicle control system as an example of a mobile structure control system to which the technology according to the present disclosure can be applied.

[0485] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. Fig.66 In the example shown, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and an overall control unit 12050. In addition, as functional components of the overall control unit 12050, a microcomputer 12051, a sound / image output unit 12052, and an in-vehicle network interface (I / F) 12053 are shown.

[0486] The drive system control unit 12010 controls the operation of devices related to the drive system of the vehicle according to various programs. For example, the drive system control unit 12010 functions as a control device for a drive force generating device such as an internal combustion engine or a drive motor for generating a drive force of the vehicle; a drive force transmitting mechanism for transmitting the drive force to the wheels; a steering mechanism for adjusting the steering angle of the vehicle; a braking device for generating a braking force of the vehicle, and the like.

[0487] The body system control unit 12020 controls the operation of various devices installed on the vehicle body according to various programs. For example, the body system control unit 12020 acts as a control device for a keyless entry system, a smart key system, a power window device, or various lights such as headlights, rear lights, brake lights, turn signal lights, and fog lights. In this case, the body system control unit 12020 can receive radio waves sent from a portable device that replaces the key or signals from various switches. The body system control unit 12020 receives input of these radio waves or signals and controls the door lock device, power window device, lights, etc. of the vehicle.

[0488] The vehicle exterior information detection unit 12030 detects information on the exterior of the vehicle in which the vehicle control system 12000 is installed. For example, the camera unit 12031 is connected to the vehicle exterior information detection unit 12030. The vehicle exterior information detection unit 12030 causes the camera unit 12031 to capture an image of the exterior of the vehicle and receive the captured image. The vehicle exterior information detection unit 12030 may perform object detection processing for detecting a person, a vehicle, an obstacle, a sign, or characters on a road surface, etc., or perform distance detection processing based on the received image.

[0489] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image, and can output the electrical signal as distance measurement information. In addition, the light received by the imaging unit 12031 may be visible light or may be invisible light such as infrared light.

[0490] The in-vehicle information detection unit 12040 detects information about the interior of the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. For example, the driver state detection unit 12041 includes a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 can calculate the driver's fatigue level or concentration level based on the detection information input from the driver state detection unit 12041, or can determine whether the driver is dozing off.

[0491] The microcomputer 12051 calculates the control target value of the driving force generating device, the steering mechanism or the braking device based on the information outside / inside the vehicle obtained by the vehicle outside information detection unit 12030 or the vehicle inside information detection unit 12040, and can output a control instruction to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control to realize the functions of the advanced driver assistance system (ADAS), which includes collision avoidance or collision mitigation of the vehicle, following driving based on the vehicle-to-vehicle distance, speed maintenance driving, collision warning of the vehicle, and lane departure warning of the vehicle.

[0492] In addition, the microcomputer 12051 controls the driving force generating device, steering mechanism or braking device, etc. based on the information about the vehicle's surroundings obtained by the external information detection unit 12030 or the internal information detection unit 12040 to perform collaborative control such as automatic driving of automatic driving that does not rely on the driver's operation.

[0493] In addition, the microcomputer 12051 can output a control instruction to the body system control unit 12020 based on the information outside the vehicle obtained by the vehicle exterior information detection unit 12030. For example, the microcomputer 12051 controls the headlights according to the position of the front vehicle or the oncoming vehicle detected by the vehicle exterior information detection unit 12030 and performs cooperative control to achieve a glare-free effect by switching the high beam to the low beam, etc.

[0494] The sound / image output unit 12052 transmits an audio output signal and / or an image output signal to an output device that can visually or auditorily notify information to a passenger of the vehicle or the outside of the vehicle. Fig.66 In the example of , as output devices, an audio speaker 12061, a display unit 12062, and a dashboard 12063 are exemplarily shown. For example, the display unit 12062 may include an in-vehicle display and / or a head-up display.

[0495] Fig.67 12031 is a diagram showing an example of the installation position of the imaging unit 12031.

[0496] exist Fig.67In the figure, the vehicle 12100 includes camera units 12101, 12102, 12103, 12104 and 12105 as the camera unit 12031.

[0497] For example, the camera units 12101, 12102, 12103, 12104, and 12105 are arranged at the following positions: the front edge of the vehicle 12100, the side mirror, the rear bumper, the rear door, and the upper part of the front windshield in the vehicle. The camera unit 12101 arranged at the front edge and the camera unit 12105 arranged at the upper part of the front windshield in the vehicle mainly obtain images in front of the vehicle 12100. The camera units 12102 and 12103 arranged on the side mirror mainly obtain images of the side of the vehicle 12100. The camera unit 12104 arranged on the rear bumper or the rear door mainly obtains images of the rear of the vehicle 12100. The front images obtained by the camera units 12101 and 12105 are mainly used to detect vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc. traveling in front of the vehicle 12100.

[0498] It should be noted that Fig.67 An example of the imaging ranges of the imaging units 12101 to 12104 is shown. The imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front edge, the imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the respective side mirrors, and the imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or the rear door. For example, the image data captured by the imaging units 12101 to 12104 are superimposed to obtain an overhead image of the vehicle 12100 observed from above.

[0499] At least one of the imaging units 12101 to 12104 may have a function of obtaining distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera including a plurality of imaging elements, or may be an imaging element having pixels for phase difference detection.

[0500] For example, the microcomputer 12051 calculates the distance to each three-dimensional object within the imaging range 12111 to 12114 and the time change of the distance (relative to the speed of the vehicle 12100) based on the distance information obtained from the imaging units 12101 to 12104. In this way, a three-dimensional object that is the closest three-dimensional object on the driving path of the vehicle 12100 and is traveling in the same direction as the vehicle 12100 at a predetermined speed (for example, 0 km / h or more) can be extracted as a vehicle traveling in front of the vehicle 12100. In addition, the microcomputer 12051 can pre-set the vehicle-to-vehicle distance to be ensured in front of the vehicle traveling in front of the vehicle 12100, and perform automatic braking control (including follow-up stop control) and automatic acceleration control (including follow-up start control) and the like. In this way, cooperative control such as automatic driving that realizes automatic driving that does not rely on the operation of the driver can be performed.

[0501] For example, the microcomputer 12051 can extract three-dimensional object data about three-dimensional objects based on the distance information obtained from the camera units 12101 to 12104, which are classified into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, and utility poles, etc., and the three-dimensional object data can be used to automatically avoid obstacles. For example, the microcomputer 12051 distinguishes obstacles near the vehicle 12100 into obstacles that can be recognized by the driver of the vehicle 12100 and obstacles that cannot be recognized. Then, the microcomputer 12051 determines the collision risk representing the risk of collision with each obstacle. If the collision risk is equal to or higher than the set value and there is a possibility of collision, the microcomputer 12051 can output a warning to the driver via the audio speaker 12061 and the display unit 12062 and can perform driving support for collision avoidance by performing forced deceleration or evasive steering by the drive system control unit 12010.

[0502] At least one of the camera units 12101 to 12104 may be an infrared camera that detects infrared light. For example, the microcomputer 12051 may identify a pedestrian by determining whether there is a pedestrian in the image captured by the camera units 12101 to 12104. For example, such identification of pedestrians is performed by a process of extracting feature points from the image captured by the camera units 12101 to 12104 as infrared cameras and a process of pattern matching a series of feature points representing the outline of an object and determining whether there is a pedestrian. For example, if the microcomputer 12051 determines that there is a pedestrian in the image captured by the camera units 12101 to 12104 and identifies the pedestrian, the sound / image output unit 12052 controls the display unit 12062 to display a rectangular contour line for emphasizing the identified pedestrian in a superimposed manner. In addition, the sound / image output unit 12052 may also control the display unit 12062 to display an icon representing a pedestrian, etc., at a desired position.

[0503] For example, the technology according to the present disclosure may also be applied to an endoscopic surgery system.

[0504] Fig.68 is a diagram schematically showing an example configuration of an endoscopic surgery system to which the technology according to the present disclosure (the present technology) can be applied.

[0505] Fig.68 The figure shows a state where an operator (doctor) 11131 is using an endoscopic surgery system 11000 to perform surgery on a patient 11132 on a bed 11133. As shown in the figure, the endoscopic surgery system 11000 includes an endoscope 11100, other surgical tools 11110 such as a pneumoperitoneum tube 11111 and an energy treatment tool 11112, a support arm device 11120 for supporting the endoscope 11100, and a cart 11200 on which various devices for endoscopic surgery are mounted.

[0506] The endoscope 11100 includes a lens barrel 11101, a region of a predetermined length from the top of the lens barrel is inserted into the body cavity of a patient 11132, and a camera head 11102, which is connected to the base end of the lens barrel 11101. In the example shown in the figure, the endoscope 11100 is designed as a so-called rigid scope having a rigid lens barrel 11101. However, the endoscope 11100 may also be designed as a flexible scope having a flexible lens barrel.

[0507] An opening into which an objective lens is inserted is provided at the top of the lens barrel 11101. The light source device 11203 is connected to the endoscope 11100, and the light generated by the light source device 11203 is guided to the top of the lens barrel 11101 through a light guide extending into the interior of the lens barrel 11101, and is irradiated through the objective lens onto a current observation target in the body cavity of the patient 11132. It should be noted that the endoscope 11100 may be a forward-looking endoscope, an oblique-looking endoscope, or a side-looking endoscope.

[0508] The optical system and the imaging element are arranged inside the camera head 11102, and the reflected light (observation light) from the current observation target is gathered on the imaging element through the optical system. The observation light is photoelectrically converted by the imaging element, and an electrical signal corresponding to the observation light, or an image signal corresponding to the observation image is generated. The image signal is transmitted to the camera control unit (CCU) 11201 as raw (RAW) data.

[0509] The CCU 11201 is formed of a central processing unit (CPU), a graphics processing unit (GPU), etc., and generally controls the operations of the endoscope 11100 and the display device 11202. Further, for example, the CCU 11201 receives an image signal from the camera head 11102, and performs various image processing such as development processing (demosaic processing) on ​​the image signal to display an image based on the image signal.

[0510] The display device 11202 displays an image based on an image signal that has been image-processed by the CCU 11201 under the control of the CCU 11201 .

[0511] For example, the light source device 11203 is formed of a light source such as a light emitting diode (LED), and provides irradiation light for imaging a surgical site, etc., to the endoscope 11100 .

[0512] The input device 11204 is an input interface of the endoscopic surgery system 11000. The user can input various information or instructions to the endoscopic surgery system 11000 through the input device 11204. For example, the user may input instructions to change the imaging conditions (type of irradiation light, magnification, focal length, etc.) of the endoscope 11100.

[0513] The treatment tool control device 11205 controls the driving of the energy treatment tool 11112 to perform tissue cauterization, incision, blood vessel sealing, etc. The pneumoperitoneum device 11206 supplies gas into the body cavity of the patient 11132 through the pneumoperitoneum tube 11111 to expand the body cavity in order to ensure the field of view of the endoscope 11100 and to ensure the working space of the operator. The recorder 11207 is a device capable of recording various information related to the operation. The printer 11208 is a device capable of printing various information related to the operation in various forms such as text, images, or graphics.

[0514] It should be noted that, for example, the light source device 11203 that provides irradiation light for imaging the surgical site to the endoscope 11100 can be composed of an LED, a laser light source, or a white light source that is a combination of an LED and a laser light source. In the case where the white light source is composed of a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision. Therefore, the white balance of the image captured by the light source device 11203 can be adjusted. Alternatively, in this case, the lasers from the respective RGB laser light sources can be irradiated on the current observation target in a time-division manner, and the drive of the imaging element of the camera head 11102 can be controlled in synchronization with the light irradiation timing. Therefore, images corresponding to R, G, and B colors, respectively, can be captured in a time-division manner. According to this method, a color image can be obtained even if no color filter is provided in the imaging element.

[0515] Furthermore, the drive of the light source device 11203 can also be controlled so as to change the intensity of the light to be output at a predetermined time interval. The drive of the imaging element of the camera head 11102 is controlled synchronously with the timing of the change in light intensity, and images are acquired and synthesized in a time-division manner. Therefore, an image with a high dynamic range can be generated without black parts and white spots.

[0516] Further, the light source device 11203 can also be designed to provide light of a predetermined wavelength band compatible with special light observation. For example, in special light observation, by utilizing the wavelength dependence of light absorption of body tissue, a narrower band of light than the irradiation light (i.e., white light) during ordinary observation is irradiated. Therefore, narrow-band observation (narrow-band imaging) is performed on predetermined tissues such as blood vessels on the surface of the mucosa with high contrast. Alternatively, in special light observation, fluorescence observation for obtaining an image from fluorescence generated by irradiating excitation light can be performed. In fluorescence observation, excitation light is irradiated on body tissue, so that fluorescence from body tissue can be observed (autofluorescence observation). Alternatively, for example, reagents such as indocyanine green (ICG) are locally injected into body tissue and excitation light corresponding to the fluorescence wavelength of the reagent is irradiated on the body tissue, so that a fluorescent image can be obtained. The light source device 11203 can be designed to provide narrow-band light and / or excitation light compatible with such special light observation.

[0517] Fig.69 It shows Fig.68 A block diagram of an example of the functional configuration of the camera head 11102 and the CCU 11201 shown in FIG.

[0518] The camera head 11102 includes a lens unit 11401, an imaging unit 11402, a driving unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other for communication via a transmission cable 11400.

[0519] The lens unit 11401 is an optical system provided at a connection portion with the lens barrel 11101. Observation light captured from the top end of the lens barrel 11101 is guided to the camera head 11102 and enters the lens unit 11401. The lens unit 11401 is composed of a combination of a plurality of lenses including a zoom lens and a focus lens.

[0520] The imaging unit 11402 is formed by an imaging element. The imaging unit 11402 may be formed by one imaging element (so-called single-board type), or may be formed by a plurality of imaging elements (so-called multi-board type). For example, in the case where the imaging unit 11402 is a multi-board type, image signals corresponding to the respective R, G, and B colors may be generated by the respective imaging elements, and the image signals may be synthesized to obtain a color image. Alternatively, the imaging unit 11402 may be designed to include a pair of imaging elements for acquiring a right-eye image signal and a left-eye image signal compatible with a three-dimensional (3D) display. When performing a 3D display, the operator 11131 may more accurately grasp the depth of the living tissue of the surgical site. It should be noted that in the case where the imaging unit 11402 is a multi-board type, a plurality of lens units 11401 are provided for each imaging element.

[0521] Further, the camera unit 11402 may not necessarily be disposed in the camera head 11102. For example, the camera unit 11402 may be disposed just behind the objective lens inside the lens barrel 11101.

[0522] The driving unit 11403 is composed of an actuator, and moves the zoom lens and the focus lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera head control unit 11405. With this configuration, the magnification and focus of the image captured by the imaging unit 11402 can be appropriately adjusted.

[0523] The communication unit 11404 is constituted by a communication device for sending and receiving various information to and from the CCU 11201. The communication unit 11404 transmits the image signal acquired from the imaging unit 11402 to the CCU 11201 as RAW data via the transmission cable 11400.

[0524] In addition, the communication unit 11404 also receives a control signal for controlling the driving of the camera head 11102 from the CCU 11201, and provides the control signal to the camera head control unit 11405. For example, the control signal includes information related to imaging conditions, such as information specifying a frame rate of an image to be captured, information specifying an exposure value when capturing an image, and / or information specifying a magnification and a focus of an image to be captured.

[0525] It should be noted that the above imaging conditions such as frame rate, exposure value, magnification or focus can be appropriately specified by the user or can be automatically set based on the acquired image signal by the control unit 11413 of the CCU 11201. In the latter case, the endoscope 11100 has a so-called automatic exposure (AE) function, an automatic focus (AF) function, and an automatic white balance (AWB) function.

[0526] The camera head control unit 11405 controls the driving of the camera head 11102 based on a control signal received from the CCU 11201 through the communication unit 11404 .

[0527] The communication unit 11411 is constituted by a communication device for transmitting and receiving various information to and from the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 through the transmission cable 11400.

[0528] Further, the communication unit 11411 also transmits a control signal for controlling the driving of the camera head 11102 to the camera head 11102. The image signal and the control signal may be transmitted through electrical communication, optical communication, or the like.

[0529] The image processing unit 11412 performs various image processing on the image signal transmitted from the camera head 11102 as RAW data.

[0530] The control unit 11413 performs various controls related to the display of images of the surgical site, etc. captured by the endoscope 11100 and captured images obtained by capturing the surgical site, etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102 .

[0531] Further, the control unit 11413 also causes the display device 11202 to display a captured image showing the surgical site, etc., based on the image signal that has been image-processed by the image processing unit 11412. At this time, the control unit 11413 can use various image recognition technologies to recognize various objects in the captured image. For example, the control unit 11413 can detect the shape, color, etc. of the edge of the object shown in the captured image to recognize surgical tools such as surgical forceps, specific living parts, bleeding, fog when using the energy treatment tool 11112, etc. When the control unit 11413 causes the display device 11202 to display the captured image, it can use the recognition result to cause the display device 11202 to superimpose various surgical auxiliary information on the displayed image of the surgical site. When the surgical auxiliary information is superimposed and displayed and presented to the operator 11131, the burden of the operator 11131 can be reduced and the operator 11131 can reliably perform the operation.

[0532] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electric signal cable compatible with electric signal communication, an optical fiber compatible with optical communication, or a composite cable thereof.

[0533] Here, in the example shown in the figure, communication is performed in a wired manner using a transmission cable 11400. However, communication between the camera head 11102 and the CCU 11201 may be performed in a wireless manner.

[0534] It should be noted that, although the description is given here using an endoscopic surgery system as an example, the technology according to the present disclosure can be applied to a microsurgery system or the like, for example.

[0535] It should be noted that the present disclosure can also be implemented as the configurations described below.

[0536] [A01] "Camera device: first implementation scheme"

[0537] A camera device, comprising:

[0538] an effective pixel region including a plurality of image pickup elements-A, amplifying signal charges generated by photoelectric conversion, and reading the signal charges to a drive circuit; and

[0539] An optical black area, which includes a plurality of imaging elements-B, surrounds the effective pixel area and outputs optical black used as a reference of a black level, wherein

[0540] The photoelectric conversion layer forming the plurality of imaging elements-A and the plurality of imaging elements-B is a common photoelectric conversion layer,

[0541] The common photoelectric conversion layer is located outside the optical black area and extends toward an outer edge area surrounding the optical black area, and

[0542] The outer edge electrode is arranged in the outer edge region.

[0543] [A02] The imaging device according to [A01], wherein the outer edge electrode is positioned to face the common photoelectric conversion layer via an insulating layer.

[0544] [A03] The imaging device according to [A02], wherein a potential having the same sign as that of the signal charge is applied to the outer edge electrode.

[0545] [A04] The imaging device according to [A03], wherein, during operation of the imaging device, a potential having the same sign as that of the signal charge is continuously applied to the outer edge electrode.

[0546] [A05] The imaging device according to [A01], wherein the outer edge electrode is connected to the common photoelectric conversion layer.

[0547] [A06] An imaging device according to [A01], wherein the outer edge electrode includes a first outer edge electrode and a second outer edge electrode, the first outer edge electrode is positioned to face the common photoelectric conversion layer via an insulating layer, and the second outer edge electrode is arranged on the outside of the first outer edge electrode and connected to the common photoelectric conversion layer.

[0548] [A07] The imaging device according to any one of [A01] to [A06], wherein the outer edge electrode surrounds the optical black area.

[0549] [A08] The imaging device according to [A07], wherein the outer edge electrode surrounding the optical black area has a continuous form.

[0550] [A09] The imaging device according to [A07], wherein the outer edge electrode surrounding the optical black area has a discontinuous form.

[0551] [A10] The imaging device according to any one of [A01] to [A09], wherein:

[0552] Each of the imaging element-A and the imaging element-B includes:

[0553] a photoelectric conversion unit in which a first electrode, the photoelectric conversion layer, and a second electrode are stacked,

[0554] The photoelectric conversion unit further includes: a charge storage electrode arranged at a distance from the first electrode and positioned to face the photoelectric conversion layer via an insulating layer,

[0555] The photoelectric conversion layer forming the imaging element-A and the photoelectric conversion layer forming the imaging element-B are formed of the common photoelectric conversion layer,

[0556] The second electrode forming the imaging element-A and the second electrode forming the imaging element-B are formed by a common second electrode, and

[0557] Light enters from the common second electrode side.

[0558] [A11] The image pickup device according to [A10], wherein the outer edge electrode is arranged on the first electrode side relative to the common photoelectric conversion layer.

[0559] [A12] The image pickup device according to [A10], wherein the outer edge electrode is arranged on the second electrode side relative to the common photoelectric conversion layer.

[0560] [A13] "Camera device: second implementation scheme"

[0561] A camera device, comprising:

[0562] an effective pixel region including a plurality of image pickup elements-A, amplifying signal charges generated by photoelectric conversion, and reading the signal charges to a drive circuit;

[0563] an optical black area including a plurality of imaging elements-B, surrounding the effective pixel area, and outputting an optical black used as a reference of a black level; and

[0564] an outer edge region, which includes a plurality of imaging elements-C and surrounds the optical black region, wherein

[0565] The photoelectric conversion layer forming the plurality of imaging elements-A, the plurality of imaging elements-B, and the plurality of imaging elements-C is a common photoelectric conversion layer, and

[0566] During the operation of the imaging device, the imaging element-C is always in an operating state.

[0567] [A14] The imaging device according to [A13], wherein:

[0568] Each of the imaging element-A, the imaging element-B, and the imaging element-C includes:

[0569] a photoelectric conversion unit in which a first electrode, the photoelectric conversion layer, and a second electrode are stacked,

[0570] The photoelectric conversion unit further includes: a charge storage electrode arranged at a distance from the first electrode and positioned to face the photoelectric conversion layer via an insulating layer,

[0571] The photoelectric conversion layer forming the imaging element-A, the photoelectric conversion layer forming the imaging element-B, and the photoelectric conversion layer forming the imaging element-C are formed from the common photoelectric conversion layer,

[0572] The second electrode forming the imaging element-A, the second electrode forming the imaging element-B, and the second electrode forming the imaging element-C are formed by a common second electrode,

[0573] During operation of the imaging device, a potential having a sign opposite to that of the signal charge is continuously applied to the first electrode forming the imaging element-C, and

[0574] During operation of the image pickup device, a potential having the same sign as that of the signal charge is applied to the charge storage electrode forming the image pickup element-C.

[0575] [A15] The imaging device according to [A13] or [A14], wherein the thickness of the insulating layer forming the imaging element-C is smaller than the thickness of the insulating layer forming the imaging element-A and the imaging element-B.

[0576] [B01] The imaging device according to [A10] or [A14], wherein the photoelectric conversion unit further includes: an insulating layer and a charge storage electrode arranged at a certain distance from the first electrode and positioned to face the photoelectric conversion layer via the insulating layer.

[0577] [B01] The camera device according to [A10] or [A14], further comprising:

[0578] Semiconductor substrates,

[0579] Wherein, the photoelectric conversion unit is arranged above the semiconductor substrate.

[0580] [B02] The imaging device according to [B01], wherein the first electrode extends in an opening formed in the insulating layer and is connected to the photoelectric conversion layer.

[0581] [B03] The imaging device according to [B01], wherein the photoelectric conversion layer extends in an opening formed in the insulating layer and is connected to the first electrode.

[0582] [B04]《Potential control of the first electrode and the charge storage electrode》

[0583] The imaging device according to any one of [B01] to [B03], further comprising:

[0584] A control unit is arranged in a semiconductor substrate and includes a drive circuit, wherein:

[0585] The first electrode and the charge storage electrode are connected to a driving circuit,

[0586] During the charge accumulation period, the driver circuit sets the potential V 11 is applied to the first electrode and the potential V 12 applied to the charge storage electrode to accumulate charges in the photoelectric conversion layer, and

[0587] During the charge transfer period, the driver circuit sets the potential V 21 is applied to the first electrode and the potential V 22 Applied to the charge storage electrode to read out the charge accumulated in the photoelectric conversion layer to the control unit through the first electrode.

[0588] Here, the potential of the first electrode is higher than the potential of the second electrode to satisfy the following conditions:

[0589] V 12 ≥V 11 , and V 22 <V 21 .

[0590] [B05]《Transmission Control Electrode》

[0591] The imaging device according to any one of [B01] to [B04], further comprising:

[0592] The transfer control electrode is arranged between the first electrode and the charge storage electrode, is arranged at a distance from the first electrode and the charge storage electrode, and is positioned to face the photoelectric conversion layer via the insulating layer.

[0593] [B06]《Potential control of the first electrode, charge storage electrode and transfer control electrode》

[0594] The camera device according to [B05] further includes:

[0595] A control unit is arranged in a semiconductor substrate and includes a drive circuit, wherein:

[0596] connecting the first electrode, the charge storage electrode and the transfer control electrode to a drive circuit,

[0597] During the charge accumulation period, the driver circuit sets the potential V 11 Applied to the first electrode, the potential V 12 applied to the charge storage electrode and the potential V 13 applied to the transfer control electrode to accumulate charges in the photoelectric conversion layer, and,

[0598] During the charge transfer period, the driver circuit sets the potential V 21 Applied to the first electrode, the potential V 22 applied to the charge storage electrode and the potential V 23 Applied to the transfer control electrode to read out the charges accumulated in the photoelectric conversion layer to the control unit through the first electrode.

[0599] Here, the potential of the first electrode is higher than the potential of the second electrode to satisfy the following conditions:

[0600] V 12 >V 13 , and V 22 ≤V 23 ≤V 21 .

[0601] [B07]《Charge discharge electrode》

[0602] The imaging device according to any one of [B01] to [B06], further comprising:

[0603] A charge discharge electrode is connected to the photoelectric conversion layer and is arranged at a distance from the first electrode and the charge storage electrode.

[0604] [B08] The image pickup device according to [B07], wherein the charge discharge electrode is positioned to surround the first electrode and the charge storage electrode.

[0605] [B09]《Potential control of the first electrode, charge storage electrode and charge discharge electrode》

[0606] The imaging device according to any one of [B01] to [B08], further comprising:

[0607] A control unit is arranged in a semiconductor substrate and includes a drive circuit, wherein:

[0608] The first electrode, the charge storage electrode and the charge discharge electrode are connected to a driving circuit,

[0609] During the charge accumulation period, the driver circuit sets the potential V 11 Applied to the first electrode, the potential V 12 applied to the charge storage electrode and the potential V 14 applied to the charge discharge electrode to accumulate charges in the photoelectric conversion layer, and

[0610] During the charge transfer period, the driver circuit sets the potential V 21 Applied to the first electrode, the potential V 22 applied to the charge storage electrode and the potential V 24 Applied to the charge discharge electrode to read out the charge accumulated in the photoelectric conversion layer to the control unit through the first electrode.

[0611] Here, the potential of the first electrode is higher than the potential of the second electrode to satisfy the following conditions:

[0612] V 14 >V 11 , and V 24 <V 21 .

[0613] [B10] Charge storage electrode segment

[0614] An image pickup device according to any one of [B01] to [B09], wherein the charge storage electrode is formed of a plurality of charge storage electrode segments.

[0615] [B11] The imaging device according to [B10], wherein:

[0616] When the potential of the first electrode is higher than the potential of the second electrode, during charge transfer, the potential applied to the charge storage electrode segment closest to the first electrode is higher than the potential applied to the charge storage electrode segment farthest from the first electrode, and

[0617] When the potential of the first electrode is lower than that of the second electrode, during charge transfer, the potential applied to the charge storage electrode segment closest to the first electrode is lower than the potential applied to the charge storage electrode segment farthest from the first electrode.

[0618] [B12] The imaging device according to any one of [B01] to [B11], wherein:

[0619] At least a floating diffusion layer and an amplifying transistor constituting a control unit are arranged in a semiconductor substrate, and

[0620] The first electrode is connected to the floating diffusion layer and the gate portion of the amplification transistor.

[0621] [B13] The imaging device according to [B12], wherein:

[0622] The reset transistor and the selection transistor constituting the control unit are also arranged in the semiconductor substrate.

[0623] The floating diffusion layer is connected to one source / drain region of the reset transistor, and

[0624] One source / drain region of the amplification transistor is connected to one source / drain region of the selection transistor, and the other source / drain region of the selection transistor is connected to the signal line.

[0625] [B14] An imaging device according to any one of [B01] to [B13], wherein a size of the charge storage electrode is larger than a size of the first electrode.

[0626] [B15] "Image capture element: first structure"

[0627] An imaging device according to any one of [B01] to [B14], wherein:

[0628] The photoelectric conversion unit is formed by N (N≥2) photoelectric conversion unit segments,

[0629] The photoelectric conversion layer is formed by N photoelectric conversion layer segments,

[0630] The insulating layer is formed by N insulating layer segments,

[0631] The charge storage electrode is formed by N charge storage electrode segments,

[0632] The nth (n=1, 2, 3, ..., N) photoelectric conversion unit segment is composed of the nth charge storage electrode segment, the nth insulating layer segment and the nth photoelectric conversion layer segment,

[0633] The photoelectric conversion unit segment having a larger n value is located farther away from the first electrode, and

[0634] The thickness of the insulating layer segment gradually changes from the first photoelectric conversion unit segment to the Nth photoelectric conversion unit segment.

[0635] [B16] "Image capture element: Second structure"

[0636] An imaging device according to any one of [B01] to [B14], wherein:

[0637] The photoelectric conversion unit is formed by N (N≥2) photoelectric conversion unit segments,

[0638] The photoelectric conversion layer is formed by N photoelectric conversion layer segments,

[0639] The insulating layer is formed by N insulating layer segments,

[0640] The charge storage electrode is formed by N charge storage electrode segments,

[0641] The nth (n=1, 2, 3, ..., N) photoelectric conversion unit segment is composed of the nth charge storage electrode segment, the nth insulating layer segment and the nth photoelectric conversion layer segment,

[0642] The photoelectric conversion unit segment having a larger n value is located farther away from the first electrode, and

[0643] The thickness of the photoelectric conversion layer segment gradually changes from the first photoelectric conversion unit segment to the Nth photoelectric conversion unit segment.

[0644] [B17] "Image capture element: the third structure"

[0645] An imaging device according to any one of [B01] to [B14], wherein:

[0646] The photoelectric conversion unit is formed by N (N≥2) photoelectric conversion unit segments,

[0647] The photoelectric conversion layer is formed by N photoelectric conversion layer segments,

[0648] The insulating layer is formed by N insulating layer segments,

[0649] The charge storage electrode is formed by N charge storage electrode segments,

[0650] The nth (n=1, 2, 3, ..., N) photoelectric conversion unit segment is composed of the nth charge storage electrode segment, the nth insulating layer segment and the nth photoelectric conversion layer segment,

[0651] The photoelectric conversion unit segment having a larger n value is located farther away from the first electrode, and

[0652] The material forming the insulating layer segments is different between adjacent photoelectric conversion unit segments.

[0653] [B18] "Image capture element: the fourth structure"

[0654] An imaging device according to any one of [B01] to [B14], wherein:

[0655] The photoelectric conversion unit is formed by N (N≥2) photoelectric conversion unit segments,

[0656] The photoelectric conversion layer is formed by N photoelectric conversion layer segments,

[0657] The insulating layer is formed by N insulating layer segments,

[0658] The charge storage electrode is formed by N charge storage electrode segments arranged separately from each other,

[0659] The nth (n=1, 2, 3, ..., N) photoelectric conversion unit segment is composed of the nth charge storage electrode segment, the nth insulating layer segment and the nth photoelectric conversion layer segment,

[0660] The photoelectric conversion unit segment having a larger n value is located farther away from the first electrode, and

[0661] The material forming the charge storage electrode segments is different between adjacent photoelectric conversion unit segments.

[0662] [B19] "Image Element: The Fifth Structure"

[0663] An imaging device according to any one of [B01] to [B14], wherein:

[0664] The photoelectric conversion unit is formed by N (N≥2) photoelectric conversion unit segments,

[0665] The photoelectric conversion layer is formed by N photoelectric conversion layer segments,

[0666] The insulating layer is formed by N insulating layer segments,

[0667] The charge storage electrode is formed by N charge storage electrode segments arranged separately from each other,

[0668] The nth (n=1, 2, 3, ..., N) photoelectric conversion unit segment includes an nth charge storage electrode segment, an nth insulating layer segment and an nth photoelectric conversion layer segment,

[0669] The photoelectric conversion unit segment having a larger n value is located farther away from the first electrode, and

[0670] The area of ​​the charge storage electrode segment gradually decreases from the first photoelectric conversion unit segment to the Nth photoelectric conversion unit segment.

[0671] [B20] "Image capture element: the sixth structure"

[0672] An imaging device according to any one of [B01] to [B14], wherein, when the stacking direction of the charge storage electrode, the insulating layer and the photoelectric conversion layer is the Z direction and the direction away from the first electrode is the X direction, the cross-sectional area of ​​the stacked portion of the charge storage electrode, the insulating layer and the photoelectric conversion layer cut along the YZ virtual plane varies according to the distance from the first electrode.

[0673] Reference numerals list

[0674] 10'1, 10'2, 10'3 Photoelectric conversion unit segment

[0675] 13 Various camera components located under the interlayer insulation layer

[0676] 14 On-Chip Microlens (OCL)

[0677] 15 Shading layer

[0678] 21, 121, 221 First electrode

[0679] 22. Second electrode

[0680] 23 Photoelectric conversion layer

[0681] 23A Organic semiconductor material layer

[0682] 23B Oxide semiconductor material layer

[0683] 23'1, 23'2, 23'3 Photoelectric conversion layer

[0684] 24, 124, 224, 24”1, 24”2, 24”3 Charge storage electrodes

[0685] 24A, 24B, 24C, 24'1, 24'2, 24'3 Charge storage electrode segments

[0686] 25. Transfer control electrode (charge transfer electrode)

[0687] 26 Charge discharge electrode

[0688] 27, 227 Charge transfer control electrode

[0689] 201 outer edge electrode (third electrode potential barrier forming electrode)

[0690] 211 outer edge electrode (fourth electrode charge discharge electrode)

[0691] 201A, 211A wherein the outer edge electrode is disposed in the region of the outer edge region

[0692] 31, 33, 41, 43 n-type semiconductor region

[0693] 32, 34, 42, 44, 73 p+ layer

[0694] 35, 36, 45, 46 Gate portion of the transfer transistor

[0695] 51 Reset transistor TR1 rst The gate portion

[0696] 51A Reset transistor TR1 rst Channel formation region

[0697] 51B, 51C Reset transistor TR1 rst The source / drain region

[0698] 52 Amplifier transistor TR1 amp The gate portion

[0699] 52A amplifier transistor TR1 amp Channel formation region

[0700] 52B, 52C Amplifier transistor TR1 amp The source / drain region

[0701] 53 Select transistor TR1 sel The gate portion

[0702] 53A Select transistor TR1 sel Channel formation region

[0703] 53B, 53C select transistor TR1 sel The source / drain region

[0704] 61 Contact hole part

[0705] 62 wiring layers

[0706] 63, 64, 68A pad

[0707] 65, 68B connection hole

[0708] 66, 67, 69 connection

[0709] 70 Semiconductor substrate

[0710] 70A: first surface (front surface) of semiconductor substrate

[0711] 70B Second surface (rear surface) of semiconductor substrate

[0712] 71 Component separation area

[0713] 72 Oxide film

[0714] 74 HfO2 film

[0715] 75 Insulation material film

[0716] 76, 81 interlayer insulation layer

[0717] 82 Insulation layer

[0718] 82'1, 82'2, 82'3 Insulation layer section

[0719] 83, 83A, 83B Insulation layer

[0720] 85, 85A Open

[0721] 86 Second Opening

[0722] 300 Image pickup device (solid-state image pickup device)

[0723] 301 Stacked Camera Element

[0724] 311 Camera Area

[0725] 312 vertical drive circuit

[0726] 313 column signal processing circuit

[0727] 314 Horizontal drive circuit

[0728] 315 Output Circuit

[0729] 316 drive control circuit

[0730] 317 signal line (data output line)

[0731] 318 horizontal signal line

[0732] 400 Electronic equipment (camera)

[0733] 401 Camera device (solid-state camera device)

[0734] 410 Optical lens

[0735] 411 Shutter Device

[0736] 412 drive circuit

[0737] 413 Signal Processing Circuit

[0738] FD1, FD2, FD3, 45C, 46C floating diffusion layer

[0739] TR1 trs TR2 trs 、TR3 trs Pass transistor

[0740] TR1 rst TR2 rst TR3 rst Reset transistor

[0741] TR1 amp TR2 amp 、TR3 amp Amplifier transistor

[0742] TR1 sel 、TR3 sel 、TR3 sel Selecting transistors

[0743] V DD power supply

[0744] TG1, TG2, TG3 transmission gate lines

[0745] RST1, RST2, RST3 reset lines

[0746] SEL1, SEL2, SEL3 selection lines

[0747] VSL, VSL1, VSL2, VSL3 signal lines (data output lines)

[0748] V OA 、V OT 、V OU wiring

Claims

1. A camera device, include: an effective pixel region including a plurality of image pickup elements-A, amplifying signal charges generated by photoelectric conversion, and reading the signal charges to a drive circuit; an optical black area including a plurality of imaging elements-B, surrounding the effective pixel area, and outputting optical black used as a reference of a black level; and an outer edge region, which includes a plurality of imaging elements-C and surrounds the optical black region, wherein The photoelectric conversion layer forming the plurality of imaging elements-A, the plurality of imaging elements-B, and the plurality of imaging elements-C is a common photoelectric conversion layer, and During the operation of the imaging device, the imaging element-C is always in an operating state.

2. The imaging device according to claim 1, in, Each of the imaging element-A, the imaging element-B, and the imaging element-C includes: a photoelectric conversion unit in which a first electrode, the photoelectric conversion layer, and a second electrode are stacked, The photoelectric conversion unit further includes: a charge storage electrode arranged at a distance from the first electrode and positioned to face the photoelectric conversion layer via an insulating layer, The photoelectric conversion layer forming the imaging element-A, the photoelectric conversion layer forming the imaging element-B, and the photoelectric conversion layer forming the imaging element-C are formed from the common photoelectric conversion layer, The second electrode forming the imaging element-A, the second electrode forming the imaging element-B, and the second electrode forming the imaging element-C are formed by a common second electrode, During operation of the imaging device, a potential having a sign opposite to that of the signal charge is continuously applied to the first electrode forming the imaging element-C, and During operation of the image pickup device, a potential having the same sign as that of the signal charge is applied to the charge storage electrode forming the image pickup element-C.

3. The imaging device according to claim 1 or 2, in, The thickness of the insulating layer forming the imaging element-C is smaller than the thickness of the insulating layer forming the imaging element-A and the imaging element-B.

Images