Method for forming transition metal dichalcogenide thin film on substrate

Abstract

A method for forming a transition metal dichalcogenide thin film on a substrate includes treating the substrate with a metal organic material and providing a transition metal precursor and a chalcogenide precursor around the substrate to synthesize the transition metal dichalcogenide on the substrate. The transition metal precursor may include a transition metal element, and the chalcogenide precursor may include a chalcogenide element.

Description

Technical Field

[0001] The present disclosure relates to methods of forming transition metal dichalcogenide thin films. Background Art

[0002] Transition metal dichalcogenides (TMDs) are two-dimensional materials with semiconductor properties. Transition metal dichalcogenides include: two chalcogenide atomic layers, each chalcogenide atomic layer having a two-dimensional hexagonal honeycomb structure; and a metal atomic layer interposed between the two chalcogenide atomic layers.

[0003] Transition metal dichalcogenide is a material that can be applied to various devices because it has excellent electrical properties, its characteristics do not change greatly even when its thickness is reduced to a nanometer scale, and it has high mobility. Summary of the invention

[0004] One or more embodiments provide a method of forming a transition metal dichalcogenide thin film.

[0005] According to one embodiment, a method for forming a transition metal dichalcogenide thin film on a substrate is provided. The method includes treating the substrate with a metal organic material and providing a transition metal precursor and a chalcogenide precursor around the substrate to synthesize a transition metal dichalcogenide on the substrate. The transition metal precursor includes a transition metal element, and the chalcogenide precursor includes a chalcogenide element.

[0006] Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the embodiments presented in the disclosure.

[0007] In some embodiments, the metal-organic material includes a metal for inducing adsorption of the transition metal precursor and the chalcogenide precursor.

[0008] In some embodiments, the metal organic material may include at least one of Al, Ti and Ni. The metal organic material may include at least one of trimethylaluminum, tri(demethylamido)aluminum, triisobutylaluminum, titanium isopropoxide, tetrakis(dimethylamido)titanium, bis(cyclopentadienyl)nickel and bis(ethylcyclopentadienyl)nickel.

[0009] In some embodiments, the transition metal dichalcogenide may be represented by the following Formula 1:

[0010] M 1-a M a 'X 2(1-b) X 2b '………<Formula 1>

[0011] Among them, in formula 1,

[0012] M and M' may be transition metal elements different from each other,

[0013] X and X' may be different chalcogen elements from each other,

[0014] 0≤a<1, and

[0015] 0≤b<1.

[0016] In some embodiments, the transition metal element may include at least one of Ti, Zr, Hf, V, Nb, Ta, Mo, W, Tc, Re, Co, Rh, Ir, Ni, Pd, Pt, Zn and Sn, and the chalcogen element may include at least one of S, Se and Te.

[0017] In some embodiments, the transition metal precursor may include a transition metal halide.

[0018] In some embodiments, the transition metal halide may include MoF 3 、MoF 6 、MoF 4 、Mo 4 F 20 、MoCl 2 、MoCl 3 、MoCl 6 、MoCl 4 、MoCl 5 、MoBr 3 、MoBr 4 、MoI 2 、MoI 3 、MoI 4 、WF 6 、WF 4 、[WF 5 ] 4 、WCl 2 、WCl 6 、WCl 4 、[WCl 5 ] 2 , [W 6 Cl 12 ]Cl 6 , WBr 3 , WBr 6 , WBr 4 , WBr 5 , W 6 Br 14 , WI 2 , WI 3 , WI 4 、VF 2 、VF 3 、VF 4 、VF<h2 style=";text-align:left;direction:ltr"> 5 <h2 style=";text-align:left;direction:ltr"> VCl<h2 style=";text-align:left;direction:ltr"> 2 <h2 style=";text-align:left;direction:ltr"> VCl<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> VCl<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> VBr<h2 style=";text-align:left;direction:ltr"> 2 <h2 style=";text-align:left;direction:ltr"> VBr<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> VBr<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> VI<h2 style=";text-align:left;direction:ltr"> 2 <h2 style=";text-align:left;direction:ltr"> VI<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> VI<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> NbCl<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> NbCl<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> NbCl<h2 style=";text-align:left;direction:ltr"> 5 <h2 style=";text-align:left;direction:ltr"> NbBr<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> NbBr<h2 style=";text-align:left;direction:ltr"> 5 <h2 style=";text-align:left;direction:ltr"> NbI<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> NbI<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> NbI<h2 style=";text-align:left;direction:ltr"> 5 <h2 style=";text-align:left;direction:ltr"> TaF<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> 、[TaF<h2 style=";text-align:left;direction:ltr"> 5 <h2 style=";text-align:left;direction:ltr"> ]<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> TaCl<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> TaCl<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> TaCl<h2 style=";text-align:left;direction:ltr"> 5 <h2 style=";text-align:left;direction:ltr"> TaBr<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> TaBr<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> TaBr<h2 style=";text-align:left;direction:ltr"> 5 <h2 style=";text-align:left;direction:ltr"> TaI<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> TaI<h2 style=";text-align:left;direction:ltr"> 5 <h2 style=";text-align:left;direction:ltr"> TIF<h2 style=";text-align:left;direction:ltr"> 2 <h2 style=";text-align:left;direction:ltr"> TIF<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> TIF<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> TiCl<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> TiCl<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> TiCl<h2 style=";text-align:left;direction:ltr"> 2 <h2 style=";text-align:left;direction:ltr"> TiBr<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> TiBr<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> HfCl<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> HfBr<h2 style=";text-align:left;direction:ltr"> 2 <h2 style=";text-align:left;direction:ltr"> HfBr<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> HfI<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> HfI<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> ZrF<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> ZrCl<h2 style=";text-align:left;direction:ltr"> 2 <h2 style=";text-align:left;direction:ltr"> ZrCl<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> ZrCl<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> ZrBr<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> ZrBr<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> ZrI<h2 style=";text-align:left;direction:ltr"> 2 <h2 style=";text-align:left;direction:ltr"> ZrI<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> ZrI<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> TcF<h2 style=";text-align:left;direction:ltr"> 6 <h2 style=";text-align:left;direction:ltr"> TcF<h2 style=";text-align:left;direction:ltr"> 5 <h2 style=";text-align:left;direction:ltr"> TcCl<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> TcCl<h2 style=";text-align:left;direction:ltr"> 6 <h2 style=";text-align:left;direction:ltr"> TcBr<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> ReF<h2 style=";text-align:left;direction:ltr"> 6 <h2 style=";text-align:left;direction:ltr"> ReF<h2 style=";text-align:left;direction:ltr"> 4、ReF 5 、ReF 7 ,Too 3 Cl 9 、ReCl 5 、ReCl 4 、ReCl 6 、ReBr 3 、ReBr 4 、ReBr 5 、ReI 3 、ReI 4 、CoF 2 、CoF 3 、CoF 4 、CoCl 2 、CoCl 3 、CoBr 2 、CoI 2 、RhF 3 、RhF 6 、RhF 4 、[RhF 5 ] 4 、RhCl 3 、RhBr 3 、RhI 3 、IrF 3 、IrF 6 、IrF 4 、[IrF 5 ] 4 、IrCl 2 、IrCl 3 、IrCl 4 、IrBr 2 、IrBr 3 、IrBr 4 、IrI 2 、IrI 3 、IrI 4 、NiF 2 、NiCl 2 、NiBr 2 、NiI 2 、PdF 2 、PdF 4 、PdCl 2 、PdBr 2 、PdI 2 、PtF 6 、PtF 4 、[PtF 5 ] 4 、PtCl 2 、PtCl 3 、PtCl 4 、Pt 6Cl 12 , PtBr 2 , PtBr 3 , PtBr 4 , PtI 2 , PtI 3 , PtI 4 , GaF 3 、GaCl 2 、GaCl 3 , GaBr 3 ,GaI 3 、SnF 2 、SnF 4 SnCl 2 SnCl 4 SnBr 2 SnBr 4 SnI 2 and SnI 4 At least one of .

[0019] In some embodiments, the chalcogenide precursor may include sulfur, hydrosulfide (H 2 S), diethyl sulfide, dimethyl disulfide, ethyl methyl sulfide, (Et 3 Si) 2 S, selenium vapor, hydrogen selenide (H 2 Se), diethyl selenide, dimethyl diselenide, ethylmethyl selenide, (Et 3 Si) 2 Se, tellurium vapor, hydrogen telluride (H 2 Te), dimethyl telluride, diethyl telluride, ethyl methyl telluride, and (Et 3 Si) 2 At least one of Te.

[0020] In some embodiments, the substrate may include at least one of silicon, silicon oxide, aluminum oxide, magnesium oxide, silicon carbide, silicon nitride, glass, quartz, sapphire, graphite, graphene, polyimide copolymer, polyimide, polyethylene naphthalate (PEN), fluoropolymer (FEP), and polyethylene terephthalate (PET).

[0021] In some embodiments, treating the substrate with the metal-organic material may include: providing the metal-organic material around the substrate; and performing a heat treatment near the substrate to decompose the metal-organic material.

[0022] In some embodiments, the heat treatment near the substrate generates metal by decomposing metal organic materials on the substrate. The heat treatment near the substrate may be performed at 300°C to 500°C.

[0023] In some embodiments, providing a transition metal precursor and a chalcogenide precursor around a substrate may form a transition metal dichalcogenide thin film by an atomic layer deposition (ALD) process or a chemical vapor deposition (CVD) process.

[0024] In some embodiments, treating the substrate with a metal organic material may be performed before or during providing a transition metal precursor and a chalcogenide precursor around the substrate to synthesize a transition metal dichalcogenide.

[0025] In some embodiments, the transition metal precursor and the chalcogenide precursor may be provided to the substrate simultaneously or may be provided to the substrate alternately.

[0026] According to another embodiment, a method for forming a transition metal dichalcogenide thin film on a substrate is provided. The method includes treating the substrate with a metal organic material and synthesizing the transition metal dichalcogenide on the substrate using an atomic layer deposition (ALD) process.

[0027] In some embodiments, forming the transition metal dichalcogenide thin film may be performed at 300°C to 500°C.

[0028] According to another embodiment, a method for forming a transition metal dichalcogenide thin film on a substrate is provided. The method includes treating the substrate with a metal organic material and synthesizing a transition metal dichalcogenide on the substrate using a chemical vapor deposition (CVD) process.

[0029] In some embodiments, forming the transition metal dichalcogenide thin film may be performed at 300°C to 500°C.

[0030] According to another embodiment, a method of forming a transition metal dichalcogenide thin film on a substrate is provided. The method may include processing a substrate to provide a metal on a surface of the substrate and depositing a transition metal dichalcogenide layer on the surface of the substrate. The metal may include at least one of Al, Ti, and Ni. Processing the substrate and depositing the transition metal dichalcogenide layer may be performed at a process chamber temperature in a range of 300° C. to 500° C.

[0031] In some embodiments, the process of depositing the transition metal dichalcogenide layer may be an atomic layer deposition (ALD) process or a chemical vapor deposition (CVD) process.

[0032] In some embodiments, the substrate may include at least one of silicon, silicon oxide, aluminum oxide, magnesium oxide, silicon carbide, silicon nitride, glass, quartz, sapphire, graphite, graphene, polyimide copolymer, polyimide, polyethylene naphthalate (PEN), fluoropolymer (FEP), and polyethylene terephthalate (PET).

[0033] In some embodiments, treating the substrate can be performed prior to depositing the transition metal dichalcogenide layer.

[0034] In some embodiments, treating the substrate is performed during deposition of the transition metal dichalcogenide layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The above and other aspects, features and advantages of certain embodiments of the present disclosure will be more apparent from the following description in conjunction with the accompanying drawings, in which:

[0036] Figure 1 is a flow chart illustrating a method of forming a transition metal dichalcogenide thin film according to an example embodiment;

[0037] Figure 2 is a flow chart illustrating a method of forming a transition metal dichalcogenide thin film according to another example embodiment;

[0038] Figure 3A and Figure 3B It is shown that without using trimethylaluminum (TMA) to SiO 2 When the substrate is surface treated, the ALD process is used to form SiO 2 MoS deposited on substrate 2 Raman and PL spectra of thin films;

[0039] Figure 4A and Figure 4B The ALD process using trimethylaluminum (TMA) to deposit SiO 2 After 20 cycles of surface treatment, MoS was deposited 2 Raman and PL spectra of thin films.

[0040] Figure 5A and Figure 5B The ALD process using trimethylaluminum (TMA) to deposit SiO 2 After 50 cycles of surface treatment, MoS was deposited by ALD process. 2 Raman and PL spectra of thin films; and

[0041] Figure 6 is a flow chart illustrating a method of forming a transition metal dichalcogenide thin film according to another example embodiment. DETAILED DESCRIPTION

[0042] Reference will now be made in detail to the embodiments illustrated in the accompanying drawings, examples of which are shown in the drawings, wherein the same reference numerals refer to the same elements throughout. In this regard, the embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Therefore, the embodiments are described below with reference to the accompanying drawings only to explain various aspects. When used herein, the term "and / or" includes any and all combinations of one or more of the relevant listed items.

[0043] Expressions such as “at least one of,” when preceding a list of elements, modify the entire list of elements and do not modify the individual elements of the list.

[0044] Hereinafter, when a layer, film, region, plate, etc. is referred to throughout the specification as being "on" or "over" another part, this includes not only the case of being directly on another part, but also the case of having another part in between. When used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. When used in this specification, the terms "comprising", "including", "having", etc. indicate the presence of stated features, wholes, steps, operations, elements, parts, and / or combinations thereof, but do not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, parts, and / or combinations thereof.

[0045] The term "above" and similar terms may be used in singular and plural forms. If the steps constituting the method are not explicitly stated or are contrary to the steps, the steps may be performed in an appropriate order. The description order of the above steps is not necessarily limited. The use of all example terms or exemplary terms is only for the purpose of describing the technical concept in detail, and its scope is not limited by the example terms or exemplary terms unless it is defined by the claims.

[0046] Transition metal dichalcogenide (TMD) includes: two chalcogenide atomic layers, each chalcogenide atomic layer having a two-dimensional hexagonal honeycomb structure; and a metal atomic layer interposed between the two chalcogenide atomic layers. Transition metal dichalcogenide can be represented by Formula 1 below.

[0047] M 1-a M a 'X 2(1-b) X 2b '………<Formula 1>

[0048] Here, M and M' are transition metal elements different from each other, X and X' are chalcogen elements different from each other, and 0≤a<1 and 0≤b<1 are satisfied.

[0049] The transition metal element may include at least one (and / or at least two) selected from Ti, Zr, Hf, V, Nb, Ta, Mo, W, Tc, Re, Co, Rh, Ir, Ni, Pd, Pt, Zn, and Sn. In addition, the chalcogen element may include at least one (and / or at least two) selected from S, Se, and Te. However, the inventive concept is not limited thereto.

[0050] In the following embodiment, a method of forming a transition metal dichalcogenide thin film on a substrate will be described.

[0051] Figure 1 is a flow chart illustrating a method of forming a transition metal dichalcogenide thin film according to an example embodiment.

[0052] Reference Figure 1 First, a substrate (110) on which a transition metal dichalcogenide thin film is to be formed is prepared. Here, the substrate may include various materials. For example, the substrate may include a metal, a semiconductor, a dielectric, or a combination thereof (eg, a semiconductor on a dielectric).

[0053] For example, the substrate may include at least one selected from silicon, silicon oxide, aluminum oxide, magnesium oxide, silicon carbide, silicon nitride, glass, quartz, sapphire, graphite, graphene, polyimide copolymer, polyimide, polyethylene naphthalate (PEN), fluorinated polymer (FEP), and polyethylene terephthalate (PET). However, the material of the substrate is not limited thereto.

[0054] Next, the surface of the substrate is treated with a metal organic material (120). Here, the process of treating the surface of the substrate includes: providing the metal organic material around the substrate; and performing a heat treatment near the substrate. Here, the heat treatment near the substrate can be performed at about 500°C or lower (e.g., 300°C to 500°C).

[0055] Like this, when a metal organic material is provided around a substrate and heat treatment near the substrate is performed at 500°C or less, the metal organic material is decomposed to generate a metal, and the metal is formed on the surface of the substrate. The metal formed on the surface of the substrate in this way can be used as a catalyst in a process for synthesizing a transition metal dichalcogenide to be described later.

[0056] The metal organic material may include at least one selected from Al, Ti and Ni. In this case, for example, the metal organic material may include at least one selected from trimethylaluminum, tri(demethylamido)aluminum, triisobutylaluminum, titanium isopropoxide, tetrakis(dimethylamido)titanium, bis(cyclopentadienyl)nickel and bis(ethylcyclopentadienyl)nickel. However, the inventive concept is not limited thereto.

[0057] Subsequently, a transition metal dichalcogenide is synthesized on the surface of the substrate and a transition metal dichalcogenide thin film is deposited (130). The thin film deposition process may be performed at a temperature of about 500°C (eg, 300°C to 500°C).

[0058] By providing a transition metal precursor including a transition metal element and a chalcogenide precursor including a chalcogenide element around the substrate, the synthesis of transition metal dichalcogenide can be performed on the surface of the substrate. Here, the transition metal precursor and the chalcogenide precursor can be provided to the substrate simultaneously or alternately.

[0059] The transition metal precursor may include, for example, a transition metal halide. Here, for example, the transition metal halide includes at least one selected from the following: MoF 3 、MoF 6 、MoF 4 、Mo 4 F 20 、MoCl 2 、MoCl 3 、MoCl 6 、MoCl 4 、MoCl 5 、MoBr 3 、MoBr 4 、MoI 2 、MoI 3 、MoI 4 、WF 6 、WF 4 、[WF 5 ] 4 、WCl 2 、WCl 6 、WCl 4 、[WCl 5 ] 2 , [W 6 Cl 12 ]Cl 6 , WBr 3 , WBr 6 , WBr 4 , WBr 5 , W 6 Br 14 , WI 2 , WI 3 , WI 4 、VF 2 、VF 3 、VF 4 、VF 5 、VCl 2 、VCl 3 、VCl 4 , VBr 2 , VBr<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> VBr<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> VI<h2 style=";text-align:left;direction:ltr"> 2 <h2 style=";text-align:left;direction:ltr"> VI<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> VI<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> NbCl<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> NbCl<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> NbCl<h2 style=";text-align:left;direction:ltr"> 5 <h2 style=";text-align:left;direction:ltr"> NbBr<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> NbBr<h2 style=";text-align:left;direction:ltr"> 5 <h2 style=";text-align:left;direction:ltr"> NbI<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> NbI<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> NbI<h2 style=";text-align:left;direction:ltr"> 5 <h2 style=";text-align:left;direction:ltr"> TaF<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> 、[TaF<h2 style=";text-align:left;direction:ltr"> 5 <h2 style=";text-align:left;direction:ltr"> ]<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> TaCl<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> TaCl<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> TaCl<h2 style=";text-align:left;direction:ltr"> 5 <h2 style=";text-align:left;direction:ltr"> TaBr<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> TaBr<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> TaBr<h2 style=";text-align:left;direction:ltr"> 5 <h2 style=";text-align:left;direction:ltr"> TaI<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> TaI<h2 style=";text-align:left;direction:ltr"> 5 <h2 style=";text-align:left;direction:ltr"> TIF<h2 style=";text-align:left;direction:ltr"> 2 <h2 style=";text-align:left;direction:ltr"> TIF<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> TIF<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> TiCl<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> TiCl<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> TiCl<h2 style=";text-align:left;direction:ltr"> 2 <h2 style=";text-align:left;direction:ltr"> TiBr<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> TiBr<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> HfCl<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> HfBr<h2 style=";text-align:left;direction:ltr"> 2 <h2 style=";text-align:left;direction:ltr"> HfBr<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> HfI<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> HfI<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> ZrF<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> ZrCl<h2 style=";text-align:left;direction:ltr"> 2 <h2 style=";text-align:left;direction:ltr"> ZrCl<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> ZrCl<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> ZrBr<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> ZrBr<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> ZrI<h2 style=";text-align:left;direction:ltr"> 2 <h2 style=";text-align:left;direction:ltr"> ZrI<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> ZrI<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> TcF<h2 style=";text-align:left;direction:ltr"> 6 <h2 style=";text-align:left;direction:ltr"> TcF<h2 style=";text-align:left;direction:ltr"> 5 <h2 style=";text-align:left;direction:ltr"> TcCl<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> TcCl<h2 style=";text-align:left;direction:ltr"> 6 <h2 style=";text-align:left;direction:ltr"> TcBr<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> ReF<h2 style=";text-align:left;direction:ltr"> 6 <h2 style=";text-align:left;direction:ltr"> ReF<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> ReF<h2 style=";text-align:left;direction:ltr"> 5 <h2 style=";text-align:left;direction:ltr"> ReF<h2 style=";text-align:left;direction:ltr"> 7 <h2 style=";text-align:left;direction:ltr"> Re<h2 style=";text-align:left;direction:ltr"> 3 <h2 style=";text-align:left;direction:ltr"> Cl<h2 style=";text-align:left;direction:ltr"> 9 <h2 style=";text-align:left;direction:ltr"> ReCl<h2 style=";text-align:left;direction:ltr"> 5、ReCl 4 、ReCl 6 、ReBr 3 、ReBr 4 、ReBr 5 、ReI 3 、ReI 4 、CoF 2 、CoF 3 、CoF 4 、CoCl 2 、CoCl 3 、CoBr 2 、CoI 2 、RhF 3 、RhF 6 、RhF 4 、[RhF 5 ] 4 、RhCl 3 、RhBr 3 、RhI 3 、IrF 3 、IrF 6 、IrF 4 、[IrF 5 ] 4 、IrCl 2 、IrCl 3 、IrCl 4 、IrBr 2 、IrBr 3 、IrBr 4 、IrI 2 、IrI 3 、IrI 4 、NiF 2 、NiCl 2 、NiBr 2 、NiI 2 、PdF 2 、PdF 4 、PdCl 2 、PdBr 2 、PdI 2 、PtF 6 、PtF 4 、[PtF 5 ] 4 、PtCl 2 、PtCl 3 、PtCl 4 、Pt 6 Cl 12 、PtBr 2 、PtBr 3 、PtBr 4 、PtI 2, PtI 3 , PtI 4 , GaF 3 、GaCl 2 、GaCl 3 , GaBr 3 ,GaI 3 、SnF 2 、SnF 4 SnCl 2 SnCl 4 SnBr 2 SnBr 4 SnI 2 and SnI 4 However, the inventive concept is not limited thereto.

[0060] The chalcogenide precursor includes at least one selected from the group consisting of sulfur, hydrosulfide (H 2 S), diethyl sulfide, dimethyl disulfide, ethyl methyl sulfide, (Et 3 Si) 2 S, selenium vapor, hydrogen selenide (H 2 Se), diethyl selenide, dimethyl diselenide, ethylmethyl selenide, (Et 3 Si) 2 Se, tellurium vapor, hydrogen telluride (H 2 Te), dimethyl telluride, diethyl telluride, ethyl methyl telluride, and (Et 3 Si) 2 Te. However, the inventive concept is not limited thereto.

[0061] The metal organic material is decomposed by surface treatment of the substrate to form a metal on the surface of the substrate, the metal including at least one selected from Al, Ti and Ni, and the metal induces the adsorption of the transition metal precursor and the chalcogenide precursor on the substrate, thereby effectively synthesizing the transition metal dichalcogenide on the surface of the substrate.

[0062] Heretofore, the case where the surface treatment of the substrate using the metal organic material is performed before synthesizing the transition metal dichalcogenide has been described. However, the inventive concept is not limited thereto, and the surface treatment of the substrate using the metal organic material may be performed while synthesizing the transition metal dichalcogenide.

[0063] The surface treatment of the substrate and the synthesis of the transition metal dichalcogenide may be performed by an atomic layer deposition (ALD) process or a chemical vapor deposition (CVD) process. However, the inventive concept is not limited thereto.

[0064] Generally, transition metal dichalcogenides are synthesized at a high temperature of 600°C or higher to form a thin film. Meanwhile, there is a method of forming a thin film by synthesizing transition metal dichalcogenides at a low temperature of 600°C or lower. However, in this case, in order to improve the quality of the thin film, it is necessary to perform heat treatment at a high temperature of 600°C or higher. In addition, in order to reduce the activation energy for synthesizing transition metal dichalcogenides, a method of forming a catalyst metal layer on a substrate or using H 2 However, the method of forming a catalyst metal layer on a substrate has a problem that in order to form the catalyst metal layer, a metal is additionally deposited on the substrate by a separate process, while using H 2 The method of treating the substrate surface with S has the problem that it is difficult to pass H 2 S-processed substrate (eg, silicon substrate).

[0065] According to this embodiment, the surface of the substrate can be treated with a metal organic material at a relatively low temperature of about 500°C or lower, thereby effectively forming a high-quality transition metal dichalcogenide thin film on the surface of the substrate through a process such as an ALD process or a CVID process.

[0066] Figure 2 is a flow chart illustrating a method of forming a transition metal dichalcogenide thin film according to another example embodiment. Figure 2 A method of forming a transition metal dichalcogenide thin film using an ALD process is shown.

[0067] Reference Figure 2 First, a substrate (210) is provided in a process chamber for performing an ALD process. The substrate may, for example, include a metal, a semiconductor, a dielectric, or a combination thereof (e.g., a semiconductor on a dielectric). As described above, the substrate may include at least one selected from silicon, silicon oxide, aluminum oxide, magnesium oxide, silicon carbide, silicon nitride, glass, quartz, sapphire, graphite, graphene, polyimide copolymer, polyimide, polyethylene naphthalate (PEN), fluorinated polymer (FEP), and polyethylene terephthalate (PET). However, the inventive concept is not limited thereto.

[0068] Next, the surface of the substrate is treated with a metal organic material. Here, the metal organic material may include a metal for inducing adsorption of a transition metal precursor and a chalcogenide precursor to be described later.

[0069] The metal organic material may include at least one selected from Al, Ti and Ni. Specifically, for example, the metal organic material may include at least one selected from trimethylaluminum, tri(demethylamido)aluminum, triisobutylaluminum, titanium isopropoxide, tetrakis(dimethylamido)titanium, bis(cyclopentadienyl)nickel and bis(ethylcyclopentadienyl)nickel. However, the inventive concept is not limited thereto.

[0070] The process of treating the surface of the substrate includes: providing a metal organic material around the substrate (220); and performing a heat treatment near the substrate (230). Here, the heat treatment near the substrate can be performed at about 500°C or less (eg, 300°C to 500°C).

[0071] In the ALD process, a process of treating a substrate surface with a metal-organic material may be performed by repeatedly providing the metal-organic material around the substrate in a plurality of cycles at a desired and / or alternatively predetermined heat treatment temperature.

[0072] Specifically, first, in a state where a metal organic material is supplied into a process chamber to provide the metal organic material around a substrate, the temperature in the process chamber is maintained at a heat treatment temperature of 500°C or lower (e.g., 300°C to 500°C). Therefore, the metal organic material supplied into the process chamber is decomposed to produce a metal, and the metal produced in this manner is formed on the surface of the substrate. In the process of synthesizing transition metal dichalcogenides to be described later, the metal formed on the surface of the substrate can be used as a catalyst. That is, the metal formed on the surface of the substrate can induce the adsorption of a transition metal precursor and a chalcogen precursor. The metal organic material remaining in the process chamber after the metal is formed on the substrate is discharged to the outside. Subsequently, by repeatedly performing the aforementioned supply and discharge process of the metal organic material in a plurality of cycles, a desired amount of metal can be formed on the surface of the substrate.

[0073] After the metal is formed on the surface of the substrate, a transition metal dichalcogenide is synthesized on the surface of the substrate using a general ALD process, thereby depositing a transition metal dichalcogenide thin film (240). Such a thin film deposition process can be performed at a temperature of 500°C or lower (e.g., 300°C to 500°C).

[0074] Specifically, first, a transition metal precursor including a transition metal element is supplied into a process chamber. Here, the transition metal element may include at least one selected from Ti, Zr, Hf, V, Nb, Ta, Mo, W, Tc, Re, Co, Rh, Ir, Ni, Pd, Pt, Zn, and Sn. However, the inventive concept is not limited thereto.

[0075] The transition metal precursor may include a transition metal halide. As described above, the transition metal halide may include at least one selected from the following: MoF3 、MoF 6 、MoF 4 、Mo 4 F 20 、MoCl 2 、MoCl 3 、MoCl 6 、MoCl 4 、MoCl 5 、MoBr 3 、MoBr 4 、MoI 2 、MoI 3 、MoI 4 、WF 6 、WF 4 , [WF 5 ] 4 、WCl 2 、WCl 6 、WCl 4 , [WCl 5 ] 2 , [W 6 Cl 12 ]Cl 6 、WBr 3 、WBr 6 、WBr 4 、WBr 5 、W 6 Br 14 、WI 2 、WI 3 、WI 4 、VF 2 、VF 3 、VF 4 、VF 5 、VCl 2 、VCl 3 、VCl 4 、VBr 2 、VBr 3 、VBr 4 、VI 2 、VI 3 、VI 4 、NbCl 3 、NbCl 4 、NbCl 5 、NbBr 4 、NbBr 5 、NbI 3 、NbI 4 、NbI 5 、TaF 3 , [TaF 5 ] 4 、TaCl3 、TaCl 4 、TaCl 5 、TaBr 3 、TaBr 4 、TaBr 5 、TaI 4 、TaI 5 、TiF 2 、TiF 3 、TiF 4 、TiCl 4 、TiCl 3 、TiCl 2 、TiBr 3 、TiBr 4 、HfCl 4 、HfBr 2 、HfBr 4 、HfI 3 、HfI 4 、ZrF 4 、ZrCl 2 、ZrCl 3 、ZrCl 4 、ZrBr 3 、ZrBr 4 、ZrI 2 、ZrI 3 、ZrI 4 、TcF 6 、TcF 5 、TcCl 4 、TcCl 6 、TcBr 4 、ReF 6 、ReF 4 、ReF 5 、ReF 7 ,Too 3 Cl 9 、ReCl 5 、ReCl 4 、ReCl 6 、ReBr 3 、ReBr 4 、ReBr 5 、ReI 3 、ReI 4 、CoF 2 、CoF 3 、CoF 4 、CoCl 2 、CoCl 3 、CoBr 2 、CoI 2 、RhF 3 、RhF6 , RhF 4 , [RhF 5 4 , RhCl 3 , RhBr 3 , RhI 3 , IrF 3 , IrF 6 , IrF 4 , [IrF 5 4 , IrCl 2 , IrCl 3 , IrCl 4 , IrBr 2 , IrBr 3 , IrBr 4 , IrI 2 , IrI 3 , IrI 4 , NiF 2 , NiCl 2 , NiBr 2 , NiI 2 , PdF 2 , PdF 4 , PdCl 2 , PdBr 2 , PdI 2 , PtF 6 , PtF 4 , [PtF 5 4 , PtCl 2 , PtCl 3 , PtCl 4 , Pt 6 Cl 12 , PtBr 2 , PtBr 3 , PtBr 4 , PtI 2 , PtI 3 , PtI 4 , GaF 3 , GaCl 2 , GaCl 3 , GaBr 3 , GaI 3 , SnF 2 , SnF 4 , SnCl 2 , SnCl 4 , SnBr 2 , SnBr 4 , SnI 2 and SnI 4 .​​​

[0076] Next, a chalcogen precursor including a chalcogen element is supplied into the process chamber. Here, the chalcogen element may include at least one selected from S, Se, and Te. However, the inventive concept is not limited thereto.

[0077] As described above, the chalcogenide precursor may include at least one selected from the group consisting of sulfur, hydrosulfide (H 2 S), diethyl sulfide, dimethyl disulfide, ethyl methyl sulfide, (Et 3 Si) 2 S, selenium vapor, hydrogen selenide (H 2 Se), diethyl selenide, dimethyl diselenide, ethylmethyl selenide, (Et 3 Si) 2 Se, tellurium vapor, hydrogen telluride (H 2 Te), dimethyl telluride, diethyl telluride, ethyl methyl telluride, and (Et 3 Si) 2 Te.

[0078] While the temperature in the process chamber is maintained at a temperature of about 500° C. or less (eg, 300° C. to 500° C.), the transition metal precursor reacts with the chalcogenide precursor on the surface of the substrate to synthesize a transition metal dichalcogenide.

[0079] As described above, since the metal is formed on the surface of the substrate using a metal organic material through a heat treatment process, the transition metal precursor and the chalcogenide precursor can be effectively adsorbed on the surface of the substrate, and thus the transition metal dichalcogenide can be easily synthesized. Then, the transition metal precursor and the chalcogenide precursor remaining in the process chamber are discharged to the outside. Subsequently, by repeatedly performing the aforementioned supply and discharge process of the transition metal precursor and the chalcogenide precursor in multiple cycles, a transition metal dichalcogenide thin film having a desired thickness is deposited on the surface of the substrate.

[0080] As described above, according to the present embodiment, the surface of the substrate is treated at a temperature of about 500° C. or lower using a metal organic material through an ALD process, and then a transition metal dichalcogenide is synthesized on the surface of the substrate, thereby effectively forming a high-quality transition metal dichalcogenide thin film on the surface of the substrate.

[0081] Heretofore, the case where the surface treatment of the substrate using the metal organic material is performed before the transition metal dichalcogenide is synthesized by the ALD process has been described. However, the inventive concept is not limited thereto, and the surface treatment of the substrate using the metal organic material may also be performed while the transition metal dichalcogenide is synthesized by the ALD process.

[0082] Figure 3A and Figure 3BIt is shown that without using trimethylaluminum (TMA) to SiO 2 When the substrate is surface treated, the ALD process is used to form SiO 2 MoS deposited on substrate 2 Raman and PL spectra of thin films.

[0083] exist Figure 3A and Figure 3B In MoS 2 In the film deposition process, M℃l 5 was used as a transition metal precursor, and H 2 S was used as a chalcogen precursor. In addition, SiO 2 The chamber is used as a deposition device and is used to supply MoCl 5 The precursor tank was maintained at a temperature of 160°C. In addition, MoCl 5 The supply time and purge time were 2 s and 10 s, respectively, as 1 cycle, and H 2 The supply time and purge time of S were 20 seconds and 10 seconds respectively as one cycle. 5 Supply and purge of H 2 The supply and purge of S were each performed for a total of 400 cycles.

[0084] Reference Figure 3A and Figure 3B It can be found that when trimethylaluminum (TMA) is not used to treat SiO 2 When the surface of the substrate is almost free of transition metal dichalcogenide film, it forms on the SiO 2 on the surface of the substrate.

[0085] Figure 4A and Figure 4B The ALD process using trimethylaluminum (TMA) to deposit SiO 2 After 20 cycles of surface treatment, MoS was deposited 2 Raman and PL spectra of thin films.

[0086] Reference Figure 4A and Figure 4B , in the surface treatment process using TMA, the supply time and purge time of TMA at 420 °C were 1 second and 20 seconds, respectively, as 1 cycle. The supply and purge of TMA were performed for a total of 20 cycles. 2 In the film deposition process, MoCl 5 was used as a transition metal precursor, and H 2 S was used as a chalcogen precursor. In addition, SiO 2 The chamber is used as a deposition device and is used to supply MoCl5 The precursor tank was maintained at a temperature of 160°C. In addition, MoCl 5 The supply time and purge time were 2 s and 10 s, respectively, as 1 cycle, and H 2 The supply time and purge time of S were 20 seconds and 10 seconds respectively as one cycle. 5 Supply and purge of H 2 The supply and purge of S were each performed for a total of 400 cycles.

[0087] Reference Figure 4A and Figure 4B It can be found that when SiO is treated with TMA 2 After 20 cycles, a transition metal dichalcogenide film with monolayer characteristics is formed on the surface of the SiO 2 on the surface of the substrate.

[0088] Figure 5A and Figure 5B The ALD process using trimethylaluminum (TMA) to deposit SiO 2 After 50 cycles of surface treatment, MoS was deposited by ALD process. 2 Raman and PL spectra of thin films.

[0089] Reference Figure 5A and Figure 5B , in the surface treatment process using TMA, the supply time and purge time of TMA at 420 °C were 1 s and 20 s, respectively, as 1 cycle. The supply and purge of TMA were performed for a total of 50 cycles. 2 In the film deposition process, MoCl 5 was used as a transition metal precursor, and H 2 S was used as a chalcogen precursor. In addition, SiO 2 The chamber is used as a deposition device and is used to supply MoCl 5 The precursor tank was maintained at a temperature of 160°C. In addition, MoCl 5 The supply time and purge time were 2 s and 10 s, respectively, as 1 cycle, and H 2 The supply time and purge time of S were 20 seconds and 10 seconds respectively as one cycle. 5 Supply and purge of H 2 The supply and purge of S were each performed for a total of 400 cycles.

[0090] Reference Figure 5A and Figure 5B It can be found that when SiO is treated with TMA 2After 50 cycles, a transition metal dichalcogenide film with monolayer characteristics is formed on the surface of the SiO 2 Furthermore, it was found that when the surface treatment using TMA was performed for 50 cycles, a high-quality transition metal dichalcogenide thin film was formed, compared with when the surface treatment using TMA was performed for 20 cycles.

[0091] Figure 6 is a flow chart illustrating a method of forming a transition metal dichalcogenide thin film according to another example embodiment. Figure 6 A method of forming a transition metal dichalcogenide thin film using a CVD process is shown.

[0092] Reference Figure 6 First, a substrate is provided in a process chamber for performing a CVD process (310). The substrate may include, for example, metal, semiconductor, dielectric, or a combination thereof (eg, semiconductor on dielectric).

[0093] Next, the surface of the substrate is treated with a metal organic material. Here, the metal organic material may include a metal for inducing adsorption of a transition metal precursor and a chalcogenide precursor to be described later.

[0094] The metal organic material may include at least one selected from Al, Ti and Ni. Specifically, for example, the metal organic material may include at least one selected from trimethylaluminum, tri(demethylamido)aluminum, triisobutylaluminum, titanium isopropoxide, tetrakis(dimethylamido)titanium, bis(cyclopentadienyl)nickel and bis(ethylcyclopentadienyl)nickel. However, the inventive concept is not limited thereto.

[0095] The process of treating the surface of the substrate includes: providing a metal organic material around the substrate (320); and performing a heat treatment near the substrate (330). Here, the heat treatment near the substrate can be performed at about 500°C or less (eg, 300°C to 500°C).

[0096] Specifically, in a state where a metal organic material is supplied into a process chamber to provide the metal organic material around a substrate, the temperature in the process chamber is maintained at a heat treatment temperature of 500°C or lower (e.g., 300°C to 500°C). Therefore, the metal organic material supplied into the process chamber is decomposed to generate a metal, and the metal generated in this manner is formed on the surface of the substrate. Here, the metal formed on the surface of the substrate can induce adsorption of a transition metal precursor and a chalcogen precursor. The metal organic material remaining in the process chamber after forming the metal on the substrate is discharged to the outside.

[0097] After the metal is formed on the surface of the substrate, a transition metal dichalcogenide is synthesized on the surface of the substrate using a general CVD process, thereby depositing a transition metal dichalcogenide thin film (340). Such a thin film deposition process can be performed at a temperature of 500°C or lower (e.g., 300°C to 500°C).

[0098] Specifically, a transition metal precursor including a transition metal element is supplied into the process chamber. Here, the transition metal element may include at least one selected from Ti, Zr, Hf, V, Nb, Ta, Mo, W, Tc, Re, Co, Rh, Ir, Ni, Pd, Pt, Zn, and Sn. The transition metal precursor may include a transition metal halide. The chalcogenide element may include at least one selected from S, Se, and Te. However, the inventive concept is not limited thereto.

[0099] When the temperature in the process chamber is maintained at about 500° C. or less (eg, 300° C. to 500° C.), the transition metal precursor reacts with the chalcogenide precursor on the surface of the substrate to synthesize a transition metal dichalcogenide.

[0100] As described above, since the metal is formed on the surface of the substrate using a metal organic material through a heat treatment process, the transition metal precursor and the chalcogenide precursor can be effectively adsorbed on the surface of the substrate, and thus the transition metal dichalcogenide can be easily synthesized. Therefore, a transition metal dichalcogenide thin film having a desired thickness can be deposited on the surface of the substrate.

[0101] As described above, according to the present embodiment, the surface of the substrate is treated at a temperature of about 500° C. using a metal organic material through a CVD process, and then a transition metal dichalcogenide is synthesized on the surface of the substrate, thereby effectively forming a high-quality transition metal dichalcogenide thin film on the surface of the substrate.

[0102] So far, the case where the surface treatment of the substrate using the metal organic material is performed before the transition metal dichalcogenide is synthesized by the CVD process has been described. However, the inventive concept is not limited thereto, and the surface treatment of the substrate using the metal organic material may also be performed while the transition metal dichalcogenide is synthesized by the CVD process.

[0103] According to the aforementioned embodiment, the surface of the substrate can be treated with a metal organic material at a relatively low temperature of about 500°C or lower, thereby effectively forming a high-quality transition metal dichalcogenide thin film on the surface of the substrate through a process such as an ALD process or a CVD process.

[0104] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. The description of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those of ordinary skill in the art that various changes in form and details may be made herein without departing from the spirit and scope as defined by the appended claims.

[0105] This application claims the benefit of Korean Patent Application No. 10-2019-0085821 filed on Jul. 16, 2019, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety.

Claims

1. A method for forming a transition metal dichalcogenide thin film on a substrate, the method comprising: treating the substrate with a metal organic material; as well as providing a transition metal precursor and a chalcogenide precursor around the substrate to synthesize a transition metal dichalcogenide on the substrate, wherein the transition metal precursor includes a transition metal element and the chalcogenide precursor includes a chalcogenide element, in: processing the substrate to provide a metal on a surface of the substrate, The processing of the substrate is performed without using a reaction gas that chemically reacts with the metal organic material and includes heat treating the vicinity of the substrate to decompose the metal organic material, wherein the heat treating the vicinity of the substrate is performed at 300° C. to 500° C., The metal organic material includes a metal for inducing the transition metal precursor and the chalcogenide precursor to be adsorbed onto the substrate, The metal organic material includes at least one of Al, Ti and Ni.

2. The method according to claim 1, wherein The metal organic material includes at least one of trimethylaluminum, tri(demethylamido)aluminum, triisobutylaluminum, titanium isopropoxide, tetrakis(dimethylamido)titanium, bis(cyclopentadienyl)nickel and bis(ethylcyclopentadienyl)nickel.

3. The method according to claim 1, wherein The transition metal dichalcogenide is represented by the following formula 1: M 1-a M a 'X 2(1-b) X 2b '………<Formula 1> in, In formula 1, M and M' are transition metal elements different from each other, X and X' are different chalcogen elements from each other, 0≤a<1, and 0≤b<1。 4. The method according to claim 1, wherein The transition metal element includes at least one of Ti, Zr, Hf, V, Nb, Ta, Mo, W, Tc, Re, Co, Rh, Ir, Ni, Pd, Pt, Zn and Sn, and The chalcogen element includes at least one of S, Se and Te.

5. The method according to claim 1, wherein The transition metal precursor includes a transition metal halide.

6. The method according to claim 5, wherein The transition metal halides include MoF3, MoF6, MoF4, Mo4F 20 , MoCl2, MoCl3, MoCl6, MoCl4, MoCl5, MoBr3, MoBr4, MoI2, MoI3, MoI4, WF6, WF4, [WF5]4, WCl2, WCl6, WCl4, [WCl5]2, [W6Cl 12 ]Cl6, WBr3, WBr6, WBr4, WBr5, W6Br 14 , WI2, WI3, WI4, VF2, VF3, VF4, VF5, VCl2, VCl3, VCl4, VBr2, VBr3, VBr4, VI2, VI3, VI4, NbCl3, NbC l4, NbCl5, NbBr4, NbBr5, NbI3, NbI4, NbI5, TaF3, [TaF5]4, TaCl3, TaCl4, TaCl5, TaBr3, TaBr4, T aBr5, TaI4, TaI5, TiF2, TiF3, TiF4, TiCl4, TiCl3, TiCl2, TiBr3, TiBr4, HfCl4, HfBr2, HfBr4, Hf I3, HfI4, ZrF4, ZrCl2, ZrCl3, ZrCl4, ZrBr3, ZrBr4, ZrI2, ZrI3, ZrI4, TcF6, TcF5, TcCl4, TcCl6, TcBr4, ReF6, ReF4, ReF5, ReF7, Re3Cl9, ReCl5, ReCl4, ReCl6, ReBr3, ReBr4, ReBr5, ReI3, ReI4, C oF2, CoF3, CoF4, CoCl2, CoCl3, CoBr2, CoI2, RhF3, RhF6, RhF4, [RhF5]4, RhCl3, RhBr3, RhI3, IrF 3. IrF6, IrF4, [IrF5]4, IrCl2, IrCl3, IrCl4, IrBr2, IrBr3, IrBr4, IrI2, IrI3, IrI4, NiF2, NiCl 2. NiBr2, NiI2, PdF2, PdF4, PdCl2, PdBr2, PdI2, PtF6, PtF4, [PtF5]4, PtCl2, PtCl3, PtCl4, Pt6Cl 12 , at least one of PtBr2, PtBr3, PtBr4, PtI2, PtI3, PtI4, GaF3, GaCl2, GaCl3, GaBr3, GaI3, SnF2, SnF4, SnCl2, SnCl4, SnBr2, SnBr4, SnI2 and SnI4.

7. The method according to claim 1, wherein The chalcogenide precursor includes at least one of sulfur, hydrosulfide (H2S), diethyl sulfide, dimethyl disulfide, ethyl methyl sulfide, (Et3Si)2S, selenium vapor, hydrogen selenide (H2Se), diethyl selenide, dimethyl diselenide, ethyl methyl selenide, (Et3Si)2Se, tellurium vapor, hydrogen telluride (H2Te), dimethyl telluride, diethyl telluride, ethyl methyl telluride and (Et3Si)2Te.

8. The method according to claim 1, wherein The substrate includes at least one of silicon, silicon oxide, aluminum oxide, magnesium oxide, silicon carbide, silicon nitride, glass, quartz, sapphire, graphite, graphene, polyimide copolymer, polyimide, polyethylene naphthalate (PEN), fluoropolymer, and polyethylene terephthalate (PET).

9. The method according to claim 1, wherein Treating the substrate with the metal organic material further comprises: The metal-organic material is provided around the substrate.

10. The method according to claim 9, wherein The heat treatment near the substrate generates metal by the decomposition of the metal organic material on the substrate.

11. The method according to claim 1, wherein The transition metal precursor and the chalcogenide precursor are provided around the substrate to form the transition metal dichalcogenide thin film by an atomic layer deposition (ALD) process or a chemical vapor deposition (CVD) process.

12. The method according to claim 1, wherein The treating of the substrate with the metal organic material is performed before providing the transition metal precursor and the chalcogenide precursor around the substrate to synthesize the transition metal dichalcogenide, or is performed during providing the transition metal precursor and the chalcogenide precursor around the substrate to synthesize the transition metal dichalcogenide.

13. The method according to claim 1, wherein The transition metal precursor and the chalcogenide precursor are provided to the substrate simultaneously or alternately.

14. A method for forming a transition metal dichalcogenide thin film on a substrate, the method comprising: treating a substrate to provide a metal on a surface of the substrate; as well as providing a transition metal precursor and a chalcogenide precursor around the substrate to deposit a transition metal dichalcogenide layer on the surface of the substrate, the transition metal precursor comprising a transition metal element, the chalcogenide precursor comprising a chalcogenide element, processing the substrate and depositing the transition metal dichalcogenide layer are performed at a process chamber temperature in a range of 300° C. to 500° C., processing the substrate using a metal organic material without using a reactive gas that chemically reacts with the metal organic material, The metal organic material includes a metal for inducing the transition metal precursor and the chalcogenide precursor to be adsorbed onto the substrate, The metal organic material includes at least one of Al, Ti and Ni.

15. The method according to claim 14, wherein The process of depositing the transition metal dichalcogenide layer is an atomic layer deposition (ALD) process or a chemical vapor deposition (CVD) process.

16. The method according to claim 14, wherein The substrate includes at least one of silicon, silicon oxide, aluminum oxide, magnesium oxide, silicon carbide, silicon nitride, glass, quartz, sapphire, graphite, graphene, polyimide copolymer, polyimide, polyethylene naphthalate (PEN), fluoropolymer, and polyethylene terephthalate (PET).

17. The method of claim 14, wherein treating the substrate is performed prior to depositing the transition metal dichalcogenide layer.

18. The method of claim 14, wherein processing the substrate is performed during deposition of the transition metal dichalcogenide layer.

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