Apparatus and method for processing a substrate

Abstract

An apparatus for processing a substrate includes: a chamber having a processing space for processing a substrate therein; a substrate supporting unit supporting the substrate in the processing space; a gas supply unit supplying gas into the processing space; an exhaust line connected to the chamber; and a decompression member reducing the pressure in the exhaust line and releasing process byproducts generated in the processing space. The exhaust line includes: a first line connected to the chamber; a second line equipped with a decompression member; and a filter tube connecting the first line and the second line, and the filter tube having a corrugated side surface.

Description

Technical Field

[0001] Embodiments of the inventive concepts described herein relate to apparatus and methods for processing a substrate with a gas. Background Art

[0002] Various processes such as photolithography, etching, thin film deposition, ion implantation, cleaning, etc. are performed to manufacture semiconductor elements. Among these processes, a substrate processing apparatus using a gas is used in the etching process, the thin film deposition process, the ion implantation process, and the cleaning process.

[0003] In the gas treatment process, process gas is supplied into the chamber, and the substrate is treated with the process gas. In the process of treating the substrate with the process gas, a large amount of process by-products are generated. The process by-products are released through the exhaust line. The exhaust line is equipped with a decompression member, and the process by-products are forcibly released by the negative pressure applied by the decompression member.

[0004] Generally, process byproducts adhere to the exhaust line and the decompression member while being forcibly released. The process byproducts adhered to the exhaust line and the decompression member may flow back to the space in which the substrate is processed, or may damage the decompression member. In particular, it is difficult to remove the process byproducts adhered to the exhaust line.

[0005] Therefore, in order to minimize the deposition of process byproducts, the exhaust line is equipped with a heater. The heater increases the temperature of the exhaust line and reduces the deposition of process byproducts. In this case, the amount of process byproducts deposited on the decompression member increases, and the replacement frequency of the decompression member increases. The decompression member is connected to multiple spaces, so it is not easy to replace the decompression member. Summary of the invention

[0006] Embodiments of the present inventive concept provide an apparatus for reducing process by-products adhering to exhaust lines and pressure relief components.

[0007] According to an exemplary embodiment, an apparatus for processing a substrate includes: a chamber having a processing space for processing a substrate therein; a substrate supporting unit supporting the substrate in the processing space; a gas supply unit supplying gas into the processing space; an exhaust line connected to the chamber; and a decompression member reducing pressure in the exhaust line and releasing process byproducts generated in the processing space. The exhaust line includes: a first line connected to the chamber; a second line equipped with a decompression member; and a filter tube connecting the first line and the second line, and the filter tube having a corrugated side surface.

[0008] The filter tube may be detachable from the first pipeline and the second pipeline. An outer peripheral surface of the filter tube may have a corrugated shape, and the filter tube may have a lower temperature than the first pipeline and the second pipeline.

[0009] The temperature outside the filter tube may be lower than the temperature inside the filter tube, and the filter tube may be formed of a material having a higher thermal conductivity than the first line and the second line.

[0010] The second line may be equipped with a valve, which opens or closes the exhaust line.

[0011] The filter tube may have a corrugated outer peripheral surface, and the filter tube may include a body having opposed open ends; and an inner protrusion protruding from an inner surface of the body.

[0012] The inner protrusion may have a spiral shape around the central axis of the body.

[0013] The inner protrusion may include a plurality of inner protrusions having an annular hole shape and arranged along a length direction of the body.

[0014] In a cut section obtained by cutting the filter tube in the length direction, the inner protrusion may be arranged to be inclined so that a direction from the inner surface of the body toward the inner end of the inner protrusion is oriented close to the central axis of the body in the upstream direction of the filter tube.

[0015] According to an exemplary embodiment, a method for processing a substrate using the apparatus includes: processing the substrate by supplying gas to the substrate in a processing space, and performing maintenance on the apparatus after unloading the substrate from the processing space. During the maintenance, the filter tube is separated from the first pipeline and the second pipeline and replaced.

[0016] During maintenance, a cleaning pump may be connected to the first pipeline to release residual particles in the processing space after the filter tube is separated and before the filter tube is replaced. The filter tube may have a larger exposed area than the first pipeline and the second pipeline, so that the filter tube has a lower temperature than the first pipeline and the second pipeline, and the exposed area is the area of ​​the filter tube exposed to the outside.

[0017] The gas may be a gas for etching a substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The above and other objects and features will become apparent from the following description with reference to the accompanying drawings, wherein like reference numerals refer to like parts throughout the various drawings unless otherwise specified, and wherein:

[0019] Figure 1 is a schematic plan view illustrating a substrate processing apparatus according to an embodiment of the present inventive concept;

[0020] Figure 2 It is shown Figure 1 A cross-sectional view of a substrate processing apparatus;

[0021] Figure 3 It is shown Figure 2 The plan view of the baffle;

[0022] Figure 4 It is shown Figure 2 An exploded perspective view of the exhaust pipe;

[0023] Figure 5 It is shown Figure 4 A cross-sectional view of a first embodiment of a filter tube;

[0024] Figures 6 to 8 The diagram shows the process of replacing the filter tube;

[0025] Fig. 9 It is shown Figure 5 A cross-sectional view of a second embodiment of a filter tube; and

[0026] Fig.10 It is shown Figure 5 A cross-sectional view of a third embodiment of a filter tube. DETAILED DESCRIPTION

[0027] Hereinafter, a substrate processing apparatus for etching a substrate using plasma according to an embodiment of the present inventive concept will be described. However, not limited thereto, the present inventive concept may be applied to various types of apparatuses for processing a substrate using gas.

[0028] Figure 1 is a schematic plan view illustrating a substrate processing apparatus according to an embodiment of the inventive concept.

[0029] refer to Figure 1 , the substrate processing apparatus 1 has an indexing module 10, a loading module 30, and a processing module 20. The indexing module 10 has a loading port 120, a conveying frame 140, and a buffer unit 2000. The loading port 120, the conveying frame 140, and the processing module 20 are arranged in a row in sequence. Hereinafter, the direction in which the loading port 120, the conveying frame 140, the loading module 30, and the processing module 20 are arranged is referred to as a first direction 12, the direction perpendicular to the first direction 12 when viewed from above is referred to as a second direction 14, and the direction perpendicular to the plane including the first direction 12 and the second direction 14 is referred to as a third direction 16.

[0030] The carrier 18 containing a plurality of substrates W therein is placed on the load port 120. A plurality of load ports 120 are provided. The load ports 120 are arranged in a row along the second direction 14. Figure 1An example in which the index module 10 has three load ports 120 is shown. However, the number of the load ports 120 may be increased or decreased according to circumstances such as processing efficiency and occupancy of the process module 20. A plurality of slots (not shown) supporting edges of the substrates W are formed in the carrier 18. The plurality of slots are arranged along the third direction 16, and the substrates W are located in the carrier 18 so as to be stacked one above the other along the third direction 16 with spacing gaps between the substrates W. A front opening unification unit (FOUP) may be used as the carrier 18.

[0031] The transfer frame 140 transfers the substrate W between the carrier 18 placed on the loading port 120, the buffer unit 2000 and the loading module 30. An indexing track 142 and an indexing robot 144 are provided in the transfer frame 140. The indexing track 142 is arranged so that its length direction is parallel to the second direction 14. The indexing robot 144 is mounted on the indexing track 142 and moves linearly along the indexing track 142 along the second direction 14. The indexing robot 144 has a base 144a, a main body 144b and an indexing arm 144c. The base 144a is mounted to be movable along the indexing track 142. The main body 144b is coupled to the base 144a. The main body 144b can move on the base 144a along the third direction 16. In addition, the main body 144b can rotate on the base 144a. The indexing arm 144c is coupled to the main body 144b and can move forward and backward relative to the main body 144b. A plurality of indexing arms 144c are provided. The indexing arms 144c are driven individually. The indexing arms 144c are stacked one above the other along the third direction 16, wherein there is a spacing gap between the indexing arms 144c. Some of the indexing arms 144c can be used to transfer the substrate W from the processing module 20 to the carrier 18, while other indexing arms 144c can transfer the substrate W from the carrier 18 to the processing module 20. Therefore, in the process of the indexing robot 144 transferring the substrate W between the carrier 18 and the processing module 20, particles generated from the substrate W to be processed can be prevented from being attached to the processed substrate W.

[0032] The buffer unit 2000 temporarily stores the substrate W. In the buffer unit 2000, process byproducts remaining on the substrate W are removed. The removal of process byproducts in the buffer unit 2000 is performed by supplying a purge gas into the buffer unit 2000. A plurality of buffer units 2000 may be provided. For example, two buffer units 2000 may be provided. The two buffer units 2000 may be provided on opposite sides of the conveying frame 140 and may be positioned opposite to each other with the conveying frame 140 located therebetween. Alternatively, only one buffer unit 2000 may be provided on one side of the conveying frame 140.

[0033] The loading module 30 is arranged between the transfer frame 140 and the transfer chamber 250. The loading module 30 provides a space for the substrate W to stay before the substrate W is transferred between the transfer chamber 250 and the transfer frame 140. The loading module 30 includes a loading lock chamber 32 and an unloading lock chamber 34. The loading lock chamber 32 and the unloading lock chamber 34 are configured so that the insides thereof can be switched between a vacuum atmosphere and an atmospheric atmosphere.

[0034] The load lock chamber 32 provides a space for temporarily staying the substrate W to be transferred from the index module 10 to the process module 20. When the substrate W is placed in the load lock chamber 32, the inner space of the load lock chamber 32 is isolated from the index module 10 and the process module 20. Thereafter, the inner space of the load lock chamber 32 is switched from the atmospheric atmosphere to the vacuum atmosphere, and the load lock chamber 32 is opened to the process module 20 in a state of being isolated from the index module 10.

[0035] The unloading lock chamber 34 provides a space for temporarily staying the substrate W to be transferred from the processing module 20 to the index module 10. When the substrate W is placed in the unloading lock chamber 34, the inner space of the unloading lock chamber 34 is isolated from the index module 10 and the processing module 20. Thereafter, the inner space of the unloading lock chamber 34 is switched from the vacuum atmosphere to the atmospheric atmosphere, and the unloading lock chamber 34 is opened to the index module 10 in a state of being isolated from the processing module 20.

[0036] The process module 20 includes a transfer chamber 250 and a plurality of process chambers 260 .

[0037] The transfer chamber 250 transfers the substrate W between the loading lock chamber 32, the unloading lock chamber 34, and the plurality of processing units 260. When viewed from above, the transfer chamber 250 may have a hexagonal shape. Alternatively, the transfer chamber 250 may have a rectangular or pentagonal shape. The loading lock chamber 32, the unloading lock chamber 34, and the plurality of processing chambers 260 are located around the transfer chamber 250. A transfer robot 242 is provided in the transfer chamber 250. The transfer robot 242 may be located at the center of the transfer chamber 250. The transfer robot 242 may have a plurality of hand-shaped parts 252 that may move in horizontal and vertical directions and may move forward or backward or rotate on a horizontal plane. The hand-shaped parts 252 may be driven independently, and the substrate W may be placed on the hand-shaped parts 252 in a horizontal state.

[0038] The substrate processing apparatus 1000 provided in each processing chamber 260 will be described below. The substrate processing apparatus 1000 performs an etching process on a substrate W.

[0039] Figure 2 It is shown Figure 1 A cross-sectional view of a substrate processing apparatus. Figure 2, the substrate processing apparatus 1000 includes a chamber 1100 , a substrate supporting unit 1200 , a gas supply unit 1300 , a plasma source 1400 , a baffle 1500 , and an exhaust unit 1600 .

[0040] The chamber 1100 has a processing space 1106 in which a substrate W is processed. The chamber 1100 has a cylindrical shape. The chamber 1100 is formed of a metal material. For example, the chamber 1100 can be formed of an aluminum material. The chamber 1100 has an inlet / outlet 1122 formed in its side wall 1102. The inlet / outlet 1122 is used as an opening for the substrate W to enter or leave the chamber 1100. The inlet / outlet 1122 is opened or closed by a door 1120. An exhaust port 1140 is provided at the bottom of the chamber 1100. The exhaust port 1140 is located below the substrate support unit 1200. The exhaust port 1140 is used as an outlet for draining the processing space 1106. The exhaust port 1140 is positioned so that its central axis coincides with the central axis of the chamber 1100.

[0041] The substrate supporting unit 1200 supports the substrate W in the processing space 1106. The substrate supporting unit 1200 may be implemented by an electrostatic chuck that supports the substrate W using an electrostatic force. Alternatively, the substrate supporting unit 1200 may support the substrate W in various ways such as mechanical clamping.

[0042] The substrate support unit 1200 includes a support plate 1210, a partition member, a base 1230 and a focusing ring 1250. The support plate 1210 has a circular plate shape. The support plate 1210 may be a dielectric plate formed of a dielectric substance. The support plate 1210 may have a radius smaller than that of the substrate W. The support plate 1210 may have a plurality of air holes in its upper surface, through which a temperature regulating gas is supplied to the lower surface of the substrate W placed on the support plate 1210. An electrode 1212 for clamping is installed inside the support plate 1210. A power supply (not shown) is connected to the electrode 1212 for clamping. Power is applied to the electrode 1212 from the power supply (not shown), and the substrate W is clamped on the support plate 1210 by an electrostatic force.

[0043] The base 1230 supports the support plate 1210. The base 1230 is located below the support plate 1210 and is fixedly connected to the support plate 1210. The upper surface of the base 1230 has a stepped shape so that the central area is located at a higher position than the edge area. The central area of ​​the upper surface of the base 1230 has an area corresponding to the lower surface of the support plate 1210. A cooling line 1232 is formed inside the base 1230. The cooling line 1232 is used as a channel for the circulation of a cooling fluid. The cooling line 1232 may be arranged in a spiral shape inside the base 1230. The base 1230 is connected to an RF power supply (not shown) located outside. The RF power supply (not shown) applies power to the base 1230. The power applied to the base 1230 guides the plasma generated in the chamber 1100 to the base 1230. The base 1230 may be formed of a metal material.

[0044] The focusing ring 1250 focuses plasma on the substrate W. The focusing ring 1250 is implemented by a ring member surrounding the support plate 1210. The focusing ring 1250 includes an inner ring 1252 and an outer ring 1254. The inner ring 1252 has a ring hole shape surrounding the support plate 1210. The inner ring 1252 is located on the edge area of ​​the base 1230. The upper surface of the inner ring 1252 has the same height as the upper surface of the support plate 1210. The inner part of the upper surface of the inner ring 1252 supports the edge area of ​​the lower surface of the substrate W. For example, the inner ring 1252 can be formed of a conductive material. The outer ring 1254 has a ring hole shape surrounding the inner ring 1252. The outer ring 1254 is adjacent to the inner ring 1252 on the edge area of ​​the base 1230. The upper end of the outer ring 1254 is located at a higher position than the upper end of the inner ring 1252. The outer ring 1254 can be formed of an insulating material.

[0045] The gas supply unit 1300 supplies a process gas onto the substrate W supported on the substrate supporting unit 1200. The gas supply unit 1300 includes a gas reservoir 1350, a gas supply line 1330, and a gas inlet 1310. The gas supply line 1330 connects the gas reservoir 1350 and the gas inlet 1310. The process gas stored in the gas reservoir 1350 is supplied to the gas inlet 1310 through the gas supply line 1330. The gas inlet 1310 is installed in the upper wall 1104 of the chamber 1100. The gas inlet 1310 is positioned to face the substrate supporting unit 1200. According to one embodiment, the gas inlet 1310 may be installed in the center of the upper wall 1104 of the chamber 1100. The gas supply line 1330 may be equipped with a valve that opens or closes an inner channel of the gas supply line 1330 or adjusts a flow rate of the process gas flowing through the inner channel of the gas supply line 1330. For example, the process gas may be an etching gas.

[0046] The plasma source 1400 excites the process gas in the chamber 1100 into plasma. An inductively coupled plasma (ICP) source may be used as the plasma source 1400. The plasma source 1400 includes an antenna 1410 and an external power supply 1430. The antenna 1410 is arranged above the chamber 1100. The antenna 1410 has a spiral shape wound multiple times and is connected to the external power supply 1430. The antenna 1410 receives power from the external power supply 1430. The antenna 1410 to which power is applied forms a discharge space in the inner space of the chamber 1100. The process gas staying in the discharge space may be excited into plasma.

[0047] The baffle 1500 uniformly releases plasma from the processing space 1106 by area. Figure 3 It is shown Figure 2 Reference Figure 3 , the baffle plate 1500 has a ring hole shape. In the processing space 1106, the baffle plate 1500 is located between the inner wall of the chamber 1100 and the substrate supporting unit 1200. The baffle plate 1500 has a plurality of baffle holes 1502 formed therein. The baffle holes 1502 are directed in the up-down direction. The baffle holes 1502 extend from the top of the baffle plate 1500 to the bottom of the baffle plate. The baffle holes 1502 are spaced apart from each other along the circumferential direction of the baffle plate 1500. The baffle holes 1502 have a slit shape and have a length direction directed in the radial direction.

[0048] Reference again Figure 2 , the exhaust unit 1600 forcibly discharges the processing space 1106. The exhaust unit 1600 includes an exhaust line 1610, an on / off valve 1660, and a decompression member 1680. The exhaust line 1610 is connected to the exhaust port 1140. The exhaust line 1610 includes a first pipeline 1620, a second pipeline 1640, and a filter tube 1700. The first pipeline 1620, the filter tube 1700, and the second pipeline 1640 are implemented by pipelines extending in sequence along the exhaust direction. The first pipeline 1620 extends from the exhaust port 1140. The second pipeline 1640 is located downstream of the first pipeline 1620 relative to the exhaust direction. The second pipeline 1640 may be equipped with an on / off valve 1660 and a decompression member 1680, and the negative pressure of the decompression member 1680 may be applied to the first pipeline 1620 and the processing space 1106. The on / off valve 1660 is located upstream of the decompression member 1680 relative to the exhaust direction.

[0049] The filter tube 1700 connects the first pipeline 1620 and the second pipeline 1640. The filter tube 1700 can be disassembled from the first pipeline 1620 and the second pipeline 1640. The filter tube 1700 filters the process byproducts generated in the processing space 1106. The filter tube 1700 minimizes the transmission of the process byproducts to the on / off valve 1660 and the pressure relief member 1680. A sealing member is provided between the filter tube 1700 and the first pipeline 1620 and between the filter tube 1700 and the second pipeline 1640. The sealing member seals the gap between the filter tube 1700 and each of the first pipeline and the second pipeline. The filter tube 1700 is fixedly connected to the first pipeline 1620 and the second pipeline 1640 by a clamp 1690. The filter tube 1700 has a corrugated side surface. The filter tube 1700 has a corrugated inner peripheral surface and a corrugated outer peripheral surface. The inner circumferential surface of the filter tube 1700 functions to filter process byproducts, and the outer circumferential surface of the filter tube 1700 functions to lower the temperature of the filter tube 1700 .

[0050] Next, the shape of the filter tube 1700 will be described in more detail. The filter tube 1700 has a body 1720, an inner protrusion 1740, and an outer protrusion 1760. Figure 5 It is shown Figure 4 A cross-sectional view of a first embodiment of a filter tube. Figure 5 , the body 1720 has a tubular shape that is open at its opposite ends. One end of the body 1720 is connected to the first pipeline 1620, and the opposite end of the body 1720 is connected to the second pipeline 1640. For example, the body 1720 may have a cylindrical shape. The internal protrusion 1740 protrudes from the inner circumferential surface of the body 1720. The internal protrusion 1740 may be arranged in a spiral shape around the central axis of the body 1720 and extend from one end of the body 1720 to its opposite end. Therefore, the internal protrusion 1740 can filter the process byproducts passing through the filter tube 1700 uniformly by area. The internal protrusion 1740 is arranged to be inclined so that the direction from the inner surface of the body 1720 toward the inner end thereof is oriented close to the central axis of the body 1720 along the upstream direction of the filter tube 1700. Therefore, the process byproducts passing through the filter tube 1700 are blocked and filtered by the internal protrusion 1740.

[0051] The external protrusion 1760 protrudes from the outer surface of the body 1720. The external protrusion 1760 is configured to increase the area of ​​the filter tube 1700 exposed to the outside. Generally, the process of processing the substrate W is performed at a temperature higher than room temperature. That is, the temperature outside the filter tube 1700 is lower than the temperature inside the filter tube 1700. By increasing the area of ​​the filter tube 1700 exposed to the outside, the external protrusion 1760 can adjust the temperature of the filter tube 1700 to a temperature lower than the temperature of the first pipeline 1620 or the second pipeline 1640. For example, the filter tube 1700 can be formed of a material having a higher thermal conductivity than the first pipeline 1620 and the second pipeline 1640. Therefore, the filter tube 1700 can dissipate heat to the outside more quickly than the first pipeline 1620 and the second pipeline 1620, and can be maintained at a lower temperature than the first pipeline 1620 and the second pipeline 1640. As the temperature of the filter tube 1700 decreases, the adhesion of the process byproducts to the filter tube 1700 increases. Therefore, by lowering the temperature of the filter tube 1700, a large amount of process by-products may be attached to the filter tube 1700, and the transfer of the process by-products to the on / off valve 1660 and the pressure reducing member 1680 may be minimized.

[0052] The on / off valve 1660 adjusts the exhaust pressure applied by the decompression member 1680. The on / off valve 1660 opens or closes the exhaust line 1610. The on / off valve 1660 is movable between an open position and a closed position. The on / off valve 1660 is movable in a direction perpendicular to the length direction of the exhaust line 1610. The on / off valve 1660 is capable of linear movement or swinging. Here, the open position is a position where the exhaust pipe 1610 is opened by the on / off valve 1660, and the closed position is a position where the exhaust pipe 1610 is closed by the on / off valve 1660. According to one embodiment, a partial area of ​​the exhaust line 1610 may be opened during processing.

[0053] Hereinafter, a method for processing a substrate W using the above-mentioned substrate processing apparatus will be described. When the substrate W is placed on the substrate supporting unit 1200, the processing space 1106 is isolated from the outside, and plasma is supplied into the processing space 1106 to etch the substrate W. The plasma reacts with the substrate W to form process by-products. The process by-products are released to the exhaust line 1610 through the baffle 1500. The process by-products are filtered by the filter pipe 1700 during the process of releasing the process by-products. When the substrate W is completely processed, the supply of plasma is stopped, and the substrate W is unloaded from the processing space 1106. Thereafter, the substrate processing device is maintained.

[0054] When maintenance is performed, the worker isolates the processing space 1106 from the outside and separates the filter tube 1700a from the first pipeline 1620 and the second pipeline 1640. The separated filter tube 1700a is moved to an external cleaning system and cleaned by the external cleaning system. A cleaning pump 1800 is connected to the first pipeline 1620 from which the filter tube 1700a is separated. The cleaning pump 1800 is implemented by a decompression member 1680 for forcibly draining the processing space 1106 during maintenance. When the cleaning pump 1800 forcibly drains the processing space 1106, the process byproducts remaining in the processing space 1106 are forcibly released by the cleaning pump 1800. Therefore, the amount of the process byproducts transmitted to the on / off valve 1660 and the decompression member 1680 can be reduced. When the maintenance is completed, the cleaning pump 1800 is separated from the first pipeline 1620 , and the cleaned filter tube 1700 a or a new filter tube 1700 b is connected to the first pipeline 1620 and the second pipeline 1640 .

[0055] Next, a second embodiment of the filter tube 1700 will be described. Fig. 9 It is shown Figure 5 A cross-sectional view of a second embodiment of a filter tube. Fig. 9 , the filter tube 1702 has a plurality of internal protrusions 1740. The internal protrusions 1740 may be spaced apart from each other along the length direction of the body 1720.

[0056] Fig.10 2 is a cross-sectional view showing a third embodiment of the filter tube. Fig.10 , the filter tube 1704 may have a shape in which the side wall has convexities and concave portions alternating with each other. The outer peripheral surface and the inner peripheral surface of the filter tube 1704 each have a convexity and a concave portion. When the outer peripheral surface has a convexity, the inner peripheral surface opposite to the outer peripheral surface may have a concave portion. Therefore, the filter tube 1704 may have a uniform inner diameter along its length direction, and the exhaust pressure disturbance of the decompression member 1680 may be minimized. In addition, since the filter tube 1704 has a uniform side wall thickness, the temperature of the filter tube 1704 may be uniformly maintained by region.

[0057] In this embodiment, the amount of process byproducts attached to the on / off valve 1660 and the decompression member 1680 is minimized by depositing a large amount of process byproducts on the filter tube 1700 and replacing the filter tube 1700. The decompression member 1680 may be connected to a plurality of process chambers 1100. In the event that the decompression member 1680 is damaged by the process byproducts attached thereto, the decompression member 1680 must be replaced. However, the decompression member 1680 is difficult to replace and the replacement cost is expensive.

[0058] However, in this embodiment, the filter tube 1700 is installed and replaced. Compared with the decompression member 1680 and the on / off valve 1660, the filter tube 1700 can be easily replaced, and the replacement cost can be reduced. In addition, the decompression member 1680 and the on / off valve 1660 are implemented with a device including an actuator such as a motor. Therefore, compared with the decompression member 1680 and the on / off valve 1660, the filter tube 1700 is easy to clean.

[0059] According to an embodiment of the present inventive concept, the exhaust line has a detachable filter tube. Therefore, the process byproducts attached to the filter tube can be easily removed by replacing the filter tube.

[0060] In addition, according to an embodiment of the present inventive concept, the filter tube has a corrugated inner surface. Therefore, a large amount of process by-products can be attached to the inner surface of the filter tube, and the amount of process by-products transmitted to the decompression member can be reduced.

[0061] In addition, according to an embodiment of the present inventive concept, the filter tube has a corrugated outer surface, so that the outer surface and the area exposed to the outside can be increased, the temperature of the filter tube can be reduced, and the amount of process byproducts attached to the filter tube can be increased.

[0062] Although the present invention has been described with reference to exemplary embodiments, it is apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the present invention. Therefore, it should be understood that the above embodiments are not restrictive but illustrative.

Claims

1. An apparatus for processing a substrate, the apparatus comprising: a chamber having a processing space for processing a substrate therein; a substrate supporting unit configured to support the substrate in the processing space; a gas supply unit configured to supply gas into the processing space; an exhaust line connected to the chamber; and a pressure reducing member configured to reduce the pressure in the exhaust line and release process byproducts generated in the processing space, The exhaust pipeline comprises: a first pipeline connected to the chamber; a second pipeline provided with the pressure reducing member; and a filter tube, the filter tube being configured to connect the first pipeline and the second pipeline, Wherein, the filter tube has a corrugated side surface, and The filter tube is formed of a material having a higher thermal conductivity than the first pipeline and the second pipeline, so that the filter tube dissipates heat from the inside of the filter tube to the outside of the filter tube and the temperature of the filter tube is maintained lower than the temperature of the first pipeline and the second pipeline.

2. The device according to claim 1, wherein: The filter tube is detachable from the first pipeline and the second pipeline.

3. The device according to claim 2, wherein: The outer peripheral surface of the filter tube has a corrugated shape, and The filter tube has a lower temperature than the first pipeline and the second pipeline.

4. The device according to claim 3, wherein: The second line is equipped with a valve configured to open or close the exhaust line.

5. The device according to any one of claims 1 to 4, wherein: The filter tube has a corrugated outer peripheral surface, and Wherein, the filter tube comprises: a body having opposed open ends; and An inner protrusion protrudes from an inner surface of the body.

6. The device according to claim 5, wherein: The inner protrusion has a spiral shape configured to surround a central axis of the body.

7. The device according to claim 5, wherein: The inner protrusion includes a plurality of inner protrusions having an annular hole shape and arranged along a length direction of the body.

8. The device according to claim 5, wherein: In a cut section obtained by cutting the filter tube in the length direction, the inner protrusion is arranged to be inclined so that the direction from the inner surface of the body toward the inner end of the inner protrusion is oriented close to the central axis of the body in the upstream direction of the filter tube.

9. A method of processing a substrate using the apparatus according to claim 2, the method comprising: processing the substrate by supplying a gas to the substrate located in the processing space; and performing maintenance on the device after unloading the substrate from the processing space, During the maintenance, the filter tube is separated from the first pipeline and the second pipeline and replaced.

10. The method according to claim 9, wherein: During the maintenance, a cleaning pump is connected to the first pipeline to release residual particles in the processing space after the filter tube is separated and before the filter tube is replaced.

11. The method according to claim 10, wherein: The filter tube has a larger exposed area than the first pipeline and the second pipeline, so that the filter tube has a lower temperature than the first pipeline and the second pipeline, wherein the exposed area is an area of ​​the filter tube exposed to the outside.

12. The method according to claim 10, wherein: The gas is a gas for etching the substrate.

13. An exhaust unit for releasing process byproducts generated in a processing space of a chamber, the exhaust unit comprising: an exhaust line connected to the chamber; and a pressure reducing member configured to reduce the pressure in the exhaust line, The exhaust pipeline comprises: a first pipeline connected to the chamber; a second pipeline provided with the pressure reducing member; and a filter tube, the filter tube being configured to connect the first pipeline and the second pipeline, Wherein, the filter tube has a corrugated side surface, and The filter tube is formed of a material having a higher thermal conductivity than the first pipeline and the second pipeline, so that the filter tube dissipates heat from the inside of the filter tube to the outside of the filter tube and the temperature of the filter tube is maintained lower than the temperature of the first pipeline and the second pipeline.

14. The exhaust unit according to claim 13, wherein: The filter tube is detachable from the first pipeline and the second pipeline.

15. The exhaust unit according to claim 14, wherein: The outer peripheral surface of the filter tube has a corrugated shape, and The filter tube has a lower temperature than the first pipeline and the second pipeline.

16. The exhaust unit according to claim 15, wherein: The second line is equipped with a valve configured to open or close the exhaust line.

17. An exhaust unit according to any one of claims 13 to 16, wherein: The filter tube has a corrugated outer peripheral surface, and Wherein, the filter tube comprises: a body having opposed open ends; and An inner protrusion protrudes from an inner surface of the body.

18. The exhaust unit according to claim 17, wherein: In a cut section obtained by cutting the filter tube in the length direction, the inner protrusion is arranged to be inclined so that the direction from the inner surface of the body toward the inner end of the inner protrusion is oriented close to the central axis of the body in the upstream direction of the filter tube.

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