Substrate cleaning apparatus, substrate processing apparatus, and substrate cleaning method

Abstract

The present application relates to a substrate cleaning apparatus, a substrate processing apparatus, and a substrate cleaning method. The substrate cleaning apparatus includes a substrate holding mechanism that holds a substrate, a rotating mechanism that rotates the substrate held by the substrate holding mechanism, and a cleaning mechanism that cleans the substrate. The cleaning mechanism includes a support column, a support arm that extends from the support column and whose height position is not changed, a cleaning member that is supported by the support arm and cleans a surface by abutting against the surface of the substrate, a lifting mechanism that lifts the cleaning member with respect to the support arm between a lifted position where the cleaning member is separated from the substrate and a lowered position where the cleaning member abuts against the substrate, and a control unit that controls at least a speed when the cleaning member is lowered.

Description

TECHNICAL FIELD

[0001] The present application relates to a substrate cleaning apparatus and a substrate cleaning method.

[0002] This application claims priority based on Japanese Patent Application No. 2019-134833 filed on July 22, 2019, and the contents thereof are incorporated herein. BACKGROUND

[0003] An apparatus for cleaning a substrate such as a semiconductor wafer includes a substrate holding mechanism that holds a substrate, a rotating mechanism that rotates the substrate, and a cleaning mechanism that cleans the substrate. The cleaning mechanism includes a support column that is retractable, a support arm that extends horizontally from the support column, a cleaning member that is supported by the support arm, and a lifting mechanism that lifts the cleaning member (see, for example, Japanese Patent Application Publication No. 2000-188274).

[0004] The substrate cleaning apparatus lowers the cleaning member by retracting the support column, and cleans the surface of the substrate by rotating the substrate while the cleaning member is in contact with the surface of the substrate.

[0005] The configuration (support column, etc.) that supports the cleaning member of the above-described substrate cleaning apparatus is complex and large in size, and requires a wide installation space. Thus, it is not easy to change the design to add a cleaning mechanism, etc. In addition, the above-described substrate cleaning apparatus requires that the load applied to the substrate when the cleaning member is in contact with the substrate be suppressed, etc., in order to protect the substrate. SUMMARY

[0006] (PROBLEMS TO BE SOLVED BY THE INVENTION)

[0007] The present application has been made in view of the above-described circumstances, and provides a substrate cleaning apparatus and a substrate cleaning method that can miniaturize the configuration that supports a cleaning member and can suppress the load applied to a substrate by the cleaning member.

[0008] (MEANS FOR SOLVING THE PROBLEMS)

[0009] The substrate cleaning apparatus of the first aspect of the present application includes a substrate holding mechanism that holds a substrate, a rotating mechanism that rotates the substrate held by the substrate holding mechanism, and a cleaning mechanism that cleans the substrate. The cleaning mechanism includes a support column, a support arm that extends from the support column and whose height position does not change, a cleaning member that is supported by the support arm and cleans the surface of the substrate by being in contact with the surface, a lifting mechanism that lifts the cleaning member with respect to the support arm between a raised position where the cleaning member is separated from the substrate and a lowered position where the cleaning member is in contact with the substrate, and a control section that controls at least the speed at which the cleaning member is lowered.

[0010] The substrate cleaning apparatus of the second aspect of the present application is the substrate cleaning apparatus of the first aspect described above, and preferably further includes a cover that surrounds the substrate from the outer periphery.

[0011] The substrate cleaning apparatus according to the third aspect of the present application is the substrate cleaning apparatus according to the first aspect or the second aspect, wherein the lifting mechanism preferably includes a fluid supply section that supplies a fluid, a cylinder that supplies the fluid, and a lifting body that adjusts the height of the cleaning member in accordance with the pressure of the fluid in the cylinder.

[0012] The substrate cleaning apparatus according to the fourth aspect of the present application is the substrate cleaning apparatus according to the third aspect, wherein the control section preferably adjusts the amount of supply of the fluid to the cylinder to control the speed at which the cleaning member descends.

[0013] The substrate cleaning apparatus according to the fifth aspect of the present application is the substrate cleaning apparatus according to the third aspect or the fourth aspect, wherein the lifting mechanism preferably further includes an urging body that urges the lifting body in a direction opposite to the direction of movement of the lifting body when the pressure of the fluid rises.

[0014] The substrate cleaning apparatus according to the sixth aspect of the present application is the substrate cleaning apparatus according to any one of the first aspect to the fifth aspect, wherein the support arm preferably rotates about the support pillar to switch between a cleanable position in which the cleaning member overlaps the substrate when viewed in parallel with the thickness direction of the substrate and a retracted position in which the cleaning member is separated from the substrate.

[0015] The substrate cleaning apparatus according to the seventh aspect of the present application is the substrate cleaning apparatus according to any one of the first aspect to the sixth aspect, wherein the substrate cleaning apparatus preferably includes a plurality of the cleaning mechanisms.

[0016] The substrate cleaning method according to the eighth aspect of the present application uses the substrate cleaning apparatus according to any one of the first aspect to the seventh aspect to clean a substrate, and a control section reduces the speed at which the cleaning member descends from the raised position to the lowered position in stages or continuously.

[0017] The substrate cleaning apparatus and the substrate cleaning method according to the aspects of the present application can improve the substrate cleaning apparatus and the substrate cleaning method. Specifically, the aspects of the present application can miniaturize the structure that supports the cleaning member and suppress the load applied to the substrate when the cleaning member abuts against the substrate. More specifically, one embodiment of the present application can ensure the cleaning quality after the cleaning process using the cleaning member on the upper surface of the substrate and prevent the substrate from breaking. Thus, the aspects of the present application can ensure the availability of the substrate processing apparatus that includes the substrate cleaning apparatus and continuously perform the cleaning process of a plurality of substrates, and thus can provide a substrate processing apparatus with further improved operation rate. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 is a schematic view of a substrate cleaning apparatus according to a first embodiment.

[0019] Figure 2 is a plan view of a substrate processing apparatus using the substrate cleaning apparatus of the first embodiment.

[0020] Figure 3 is a schematic view of a cleaning member and a lifting mechanism.

[0021] Figure 4 is a schematic view illustrating the operation of the cleaning member and the lifting mechanism.

[0022] Figure 5 is a schematic view illustrating an example of the operation of the support arm.

[0023] Figure 6 is a graph showing an example of the change in the internal pressure of the cylinder of the lifting mechanism.

[0024] Figure 7 is a schematic view of a cleaning member and a lifting mechanism of the substrate cleaning apparatus of the second embodiment.

[0025] Figure 8 is a graph showing the load applied to the substrate in Example 1.

[0026] Figure 9 is a graph showing the load applied to the substrate in Example 2.

[0027] Figure 10 is a graph showing the load applied to the substrate in Comparative Example 1.

[0028] Symbol Explanation

[0029] 1: rack

[0030] 1a, 1b: partition wall

[0031] 2: loading / unloading section

[0032] 3: polishing section

[0033] 3A: first polishing unit

[0034] 3B: second polishing unit

[0035] 3C: third polishing unit

[0036] 3D: fourth polishing unit

[0037] 4: cleaning section

[0038] 5: control section

[0039] 6: first linear conveyer

[0040] 7: second linear conveyer

[0041] 10: substrate cleaning apparatus

[0042] 10A: polishing pad

[0043] 11: elevator

[0044] 12: swing conveyor

[0045] 20: front loading section

[0046] 21: traveling mechanism

[0047] 22: conveyance robot

[0048] 30A, 30B, 30C, 30D: polishing table

[0049] 31A, 31B, 31C, 31D: upper ring-shaped turntable

[0050] 32A, 32B, 32C, 32D: polishing liquid supply nozzle

[0051] 33A, 33B, 33C, 33D: dresser

[0052] 34A, 34B, 34C, 34D: atomizer

[0053] 40: substrate holding mechanism

[0054] 41: holding section

[0055] 42: pedestal section

[0056] 43: locking section

[0057] 50: rotation mechanism

[0058] 51: driving section

[0059] 52: rotation shaft

[0060] 53: base

[0061] 60: cleaning mechanism

[0062] 61: support

[0063] 62: support arm

[0064] 63: cleaning member

[0065] 63a: shaft section

[0066] 63b: holding section

[0067] 63c: cleaning part

[0068] 64: lifting mechanism

[0069] 64a: lifting driving section

[0070] 64b: support

[0071] 64c: force applying body

[0072] 64d: cylinder

[0073] 64e: lifting body

[0074] 64f: connecting portion

[0075] 64g: supply path

[0076] 65: cleaning member rotating mechanism

[0077] 65a: rotating drive portion

[0078] 65b: drive belt

[0079] 66: arm turning portion

[0080] 67: control portion

[0081] 70: cover

[0082] 180: temporary placement table

[0083] 190: first cleaning chamber

[0084] 191: first transfer chamber

[0085] 192: second cleaning chamber

[0086] 193: second transfer chamber

[0087] 194: drying chamber

[0088] 201: primary cleaning assembly

[0089] 202: secondary cleaning assembly

[0090] 205: drying assembly

[0091] 209: first transfer robot

[0092] 210: second transfer robot

[0093] C1, C2, C3: central axis

[0094] P1: raised position

[0095] P2: lowered position

[0096] P3: cleanable position

[0097] P4: retracted position

[0098] TP1: first transfer position

[0099] TP2: second transfer position

[0100] TP3: third transfer position

[0101] TP4: fourth transfer position

[0102] TP5: fifth transfer position

[0103] TP6: sixth transfer position

[0104] TP7: seventh transfer position

[0105] W: wafer DETAILED DESCRIPTION

[0106] Hereinafter, an embodiment of the present application will be described with reference to the drawings.

[0107] Further, unless otherwise specified, "upper" means a direction in which a cleaning member exists from a substrate as a starting point, and "lower" means the opposite direction. Further, with respect to the cleaning member and the constituent members constituting the same, "upper surface" and "surface" mean a surface of the side with which the cleaning member contacts the substrate.

[0108] Figure 1 is a schematic view of a substrate cleaning apparatus 10 of the first embodiment. Figure 2 is a plan view of a substrate processing apparatus 100 using the substrate cleaning apparatus 10.

[0109] As shown in Figure 2 , the substrate processing apparatus 100 has a roughly rectangular-shaped frame 1. The inside of the frame 1 is divided into a load / unload section 2, a polishing section 3, and a cleaning section 4 by partition walls la, lb. The load / unload section 2, the polishing section 3, and the cleaning section 4 are respectively independently assembled and independently exhausted. The substrate processing apparatus 100 has a control section 5 that controls the substrate processing operation.

[0110] The load / unload section 2 has two or more (four in the present embodiment) front load sections 20 in which wafer cassettes storing a plurality of wafers (substrates) are loaded. The front load sections 20 are arranged along the width direction (direction perpendicular to the length direction) of the substrate processing apparatus adjacent to the frame 1. An open cassette, an SMIF (Standard Manufacturing Interface) cassette, or a FOUP (Front Opening Unified Pod) can be mounted in the front load section 20. The SMIF and the FOUP are closed containers that store the wafer cassette inside and maintain an environment independent from the outside space by being covered with a partition wall.

[0111] On the front loading section 20, a traveling mechanism 21 is arranged. On the traveling mechanism 21, two transfer robots (loaders) 22 are arranged so as to be movable in the arrangement direction of the wafer cassettes. The transfer robots 22 are movable on the traveling mechanism 21, and can access the wafer cassettes mounted on the front loading section 20. Each of the transfer robots 22 has a hand on the upper portion and a hand on the lower portion. The upper hand of the transfer robot 22 is used when returning the processed wafers to the wafer cassettes. The lower hand of the transfer robot 22 is used when taking the unprocessed wafers from the wafer cassettes. The lower hand of the transfer robot 22 is rotatable about its axis, and can invert the wafers.

[0112] The loading / unloading section 2 is a section that needs to be kept in the cleanest state. The inside of the loading / unloading section 2 is always maintained at a higher pressure than the outside of the substrate processing apparatus, the polishing section 3, or the cleaning section 4. In the loading / unloading section 2, a filter fan unit (not shown) having a HEPA filter, a ULPA filter, or a chemical filter is provided. From the filter fan unit, clean air from which fine particles, toxic vapor, and toxic gas are removed is always blown.

[0113] The polishing section 3 is a section in which polishing (planarization) of the wafers is performed, and has a first polishing unit 3A, a second polishing unit 3B, a third polishing unit 3C, and a fourth polishing unit 3D. The first polishing unit 3A, the second polishing unit 3B, the third polishing unit 3C, and the fourth polishing unit 3D are arranged in the longitudinal direction of the substrate processing apparatus 100.

[0114] In the polishing section 3, a negative pressure is formed inside the polishing section 3, and the pressure is maintained lower than the inside pressure of the cleaning section 4, because slurry is used as the polishing liquid.

[0115] The first polishing unit 3A has a polishing table 30A, an upper ring-shaped turntable 31A, a polishing liquid supply nozzle 32A, a dresser 33A, and an atomizer 34A. The polishing table 30A has a polishing pad 10A having a polishing surface mounted thereon. The upper ring-shaped turntable 31A holds the wafer, and polishes the wafer while pressing the wafer against the polishing pad 10A on the polishing table 30A. The polishing liquid supply nozzle 32A supplies a polishing liquid and a dresser liquid (e.g., pure water) to the polishing pad 10A. The dresser 33A performs dressing of the polishing surface of the polishing pad 10A. The atomizer 34A sprays a mixed fluid of a liquid (e.g., pure water) and a gas (e.g., nitrogen) or a mist of a liquid (e.g., pure water) to the polishing surface.

[0116] The second polishing unit 3B has a polishing table 30B on which a polishing pad 10A is installed, an upper annular turntable 31B, a polishing liquid supply nozzle 32B, a dresser 33B, and an atomizer 34B. The third polishing unit 3C has a polishing table 30C on which a polishing pad 10A is installed, an upper annular turntable 31C, a polishing liquid supply nozzle 32C, a dresser 33C, and an atomizer 34C. The fourth polishing unit 3D has a polishing table 30D on which a polishing pad 10A is installed, an upper annular turntable 31D, a polishing liquid supply nozzle 32D, a dresser 33D, and an atomizer 34D.

[0117] A polishing pad 10A is attached to the upper surface of the polishing table 30A of the first polishing unit 3A. The upper surface of the polishing pad 10A constitutes a polishing surface for polishing a wafer. The polishing table 30A is rotated around the axis. A wafer is held by vacuum adsorption to the lower surface of the upper annular turntable 31A. During polishing, a polishing liquid is supplied to the polishing surface of the polishing pad 10A from the polishing liquid supply nozzle 32A. A wafer as a polishing target is pressed against the polishing surface of the polishing pad 10A by the upper annular turntable 31A to be polished.

[0118] The second polishing unit 3B, the third polishing unit 3C, and the fourth polishing unit 3D have the same structure as the first polishing unit 3A.

[0119] A first linear conveyer 6 is disposed adjacent to the first polishing unit 3A and the second polishing unit 3B. The first linear conveyer 6 conveys wafers between four conveyance positions arranged in parallel in the direction in which the polishing units 3A, 3B are arranged. The four conveyance positions are a first conveyance position TP1, a second conveyance position TP2, a third conveyance position TP3, and a fourth conveyance position TP4, which are disposed in order from the load / unload section side.

[0120] A temporary placement table 180 is provided in the vicinity of the first linear conveyer 6.

[0121] A second linear conveyer 7 is disposed adjacent to the third polishing unit 3C and the fourth polishing unit 3D. The second linear conveyer 7 conveys wafers between three conveyance positions arranged in parallel in the direction in which the polishing units 3C, 3D are arranged. The three conveyance positions are a fifth conveyance position TP5, a sixth conveyance position TP6, and a seventh conveyance position TP7, which are disposed in order from the load / unload section side.

[0122] The wafers are carried by the first linear conveyer 6 to the polishing units 3A, 3B. As described above, the upper ring-shaped turntable 31A of the first polishing unit 3A moves between a polishing position and a second carrying position TP2. Therefore, the wafer is transferred to the upper ring-shaped turntable 31A at the second carrying position TP2. Similarly, the upper ring-shaped turntable 31B of the second polishing unit 3B moves between a polishing position and a third carrying position TP3. The wafer is transferred to the upper ring-shaped turntable 31B at the third carrying position TP3. The upper ring-shaped turntable 31C of the third polishing unit 3C moves between a polishing position and a sixth carrying position TP6. The wafer is transferred to the upper ring-shaped turntable 31C at the sixth carrying position TP6. The upper ring-shaped turntable 31D of the fourth polishing unit 3D moves between a polishing position and a seventh carrying position TP7. The wafer is transferred to the upper ring-shaped turntable 31D at the seventh carrying position TP7.

[0123] A lift 11 is provided at the first carrying position TP1 to receive the wafers from the carrying robot 22. The lift 11 carries the wafers from the carrying robot 22 to the first linear conveyer 6.

[0124] A swing conveyer 12 is provided between the first linear conveyer 6, the second linear conveyer 7 and the cleaning section 4. The swing conveyer 12 has a robot that is movable between a fourth carrying position TP4 and a fifth carrying position TP5. The swing conveyer 12 transfers the wafers from the first linear conveyer 6 to the second linear conveyer 7. The wafers are carried by the second linear conveyer 7 to at least one of the third polishing unit 3C and the fourth polishing unit 3D. The wafers that have been polished by the polishing section 3 are carried to the cleaning section 4 via the swing conveyer 12.

[0125] The cleaning section 4 is divided into a first cleaning chamber 190, a first carrying chamber 191, a second cleaning chamber 192, a second carrying chamber 193 and a drying chamber 194.

[0126] A primary cleaning assembly 201 is provided in the first cleaning chamber 190. Two primary cleaning assemblies 201 are provided at different heights in the first cleaning chamber 190, and the two primary cleaning assemblies can be used alternately. A first carrying robot 209 is provided in the first carrying chamber 191. A secondary cleaning assembly 202 is provided in the second cleaning chamber 192. Two secondary cleaning assemblies 202 are provided at different heights in the second cleaning chamber 192, and the two secondary cleaning assemblies can be used alternately. A second carrying robot 210 is provided in the second carrying chamber 193. A drying assembly 205 is provided in the drying chamber 194. Two drying assemblies 205 are provided at different heights in the drying chamber 194, and the two drying assemblies can be used alternately.

[0127] The first transfer robot 209 transfers the wafer W between the temporary placement table 180, the first cleaning assembly 201, and the second cleaning assembly 202. The second transfer robot 210 transfers the wafer W between the second cleaning assembly 202 and the drying assembly 205.

[0128] The first cleaning assembly 201 and the second cleaning assembly 202 have the same structure. The first cleaning assembly 201 and the second cleaning assembly 202, for example, use the substrate cleaning apparatus 10 shown in Figure 1

[0129] As shown in Figure 1 The substrate cleaning apparatus 10 includes a substrate holding mechanism 40, a rotation mechanism 50, a plurality of cleaning mechanisms 60, and a cover 70.

[0130] In the following, the positional relationship of each part of the substrate cleaning apparatus 10 will be described. Figure 1 In the following, the positional relationship of each part of the substrate cleaning apparatus 10 will be described. Figure 1 In the following, the positional relationship of each part of the substrate cleaning apparatus 10 will be described. Figure 1 In the following, the positional relationship of each part of the substrate cleaning apparatus 10 will be described.

[0131] The substrate holding mechanism 40 includes a plurality of holding portions 41. The holding portion 41 includes a base portion 42 and a clamping portion 43. The clamping portion 43 is provided at the upper end of the base portion 42. The clamping portion 43 is clamped to the peripheral portion of the wafer W. The holding portion 41 holds the wafer W by clamping the clamping portion 43 to the peripheral portion of the wafer W. The plurality of holding portions 41 are provided at different positions in the circumferential direction of the wafer W.

[0132] C1 is the central axis of the substrate holding mechanism 40. The central axis C1 is in the height direction. The substrate holding mechanism 40 holds the wafer W such that the central axis of the wafer W coincides with the central axis C1. The substrate holding mechanism 40 preferably holds the wafer W in a horizontal state.

[0133] In addition, the structure of the substrate holding mechanism is not particularly limited. For example, instead of the clamping portion 43, a cylindrical holding body (not shown) that abuts against the peripheral portion of the wafer W in a pressing state and rotates about the central axis C1 can be used.

[0134] The rotation mechanism 50 includes a driving portion 51, a rotation shaft 52, and a base 53. The rotation mechanism 50 rotates the rotation shaft 52 and the base 53 about the central axis C1 by the driving portion 51, and rotates the holding portion 41 about the central axis C1. The rotation mechanism 50 rotates the wafer W about the central axis C1 by the rotation of the holding portion 41. The driving portion 51 is, for example, a motor.

[0135] ​Furthermore, the rotating mechanism is not particularly limited in structure as long as it can rotate the wafer. For example, the rotating mechanism may also have multiple roller-shaped holders. The roller-shaped holders hold the periphery of the wafer W and rotate the wafer W by their own rotation.

[0136] The cleaning mechanism 60 includes a support column 61, a support arm 62, a cleaning component 63, a lifting mechanism 64, a cleaning component rotation mechanism 65, a support arm rotation part 66, and a control part 67. In one embodiment, the support arm rotation part 66 is composed of a motor or the like, and is capable of rotating the support arm 62 around a predetermined rotation axis according to a control signal from the control part 67.

[0137] The support column 61 extends upwards from the installation surface, for example. Because the support column 61 does not have a telescopic mechanism or a lifting mechanism, its construction is simple. Therefore, the support column 61 requires little installation space.

[0138] The support arm 62 extends from the upper end of the support column 61 in a direction intersecting with the support column 61. For example, the support arm 62 extends horizontally from the upper end of the support column 61. Because the support column 61 does not have a telescopic mechanism, lifting mechanism, etc., the height position of the upper end of the support column 61 remains unchanged. Therefore, the height position of the support arm 62 does not change. The support arm 62 maintains a certain height position while operating.

[0139] The support column 61 and the arm 62 support the cleaning component 63.

[0140] Figure 3 This is a schematic diagram of the cleaning component 63 and the lifting mechanism 64.

[0141] like Figure 3 As shown, the cleaning member 63 includes a shaft portion 63a, a holding portion 63b, and a cleaning component 63c. The shaft portion 63a has a central axis C2 parallel to the central axis C1. The holding portion 63b is located at the lower end of the shaft portion 63a. The holding portion 63b holds the cleaning component 63c. The cleaning component 63c is, for example, an elastic material with liquid absorption properties. The cleaning component 63c is, for example, made of a porous resin material. The resin material constituting the cleaning component 63c includes, for example, PVF (polyvinyl formal), PVA (polyvinyl alcohol), and polyurethane foam. The cleaning component 63c is, for example, formed into a cylindrical shape having a central axis along the central axis C2. The cleaning component 63c cleans the surface of the wafer W by abutting against the surface (upper surface). The cleaning member 63 is rotatable about the central axis C2 of the shaft portion 63a. The cleaning member 63 is called a "pencil type" or "pencil type" cleaning member. The cleaning member 63 is movable up and down.

[0142] The lifting mechanism 64 includes a lifting drive unit 64a, a support body 64b, and a force-applying body 64c.

[0143] The lifting drive unit 64a includes, for example, a fluid supply unit (not shown), a cylinder 64d, a lifting body 64e, and a connecting part 64f. The fluid supply unit is a source of fluid such as air. Fluid is supplied from the supply unit to the cylinder 64d via a supply path 64g. The lifting body 64e is flexibly mounted within the cylinder 64d. The lifting body 64e rises and falls according to the fluid pressure within the cylinder 64d, thus adjusting the height of the cleaning member 63. For example, when the pressure within the cylinder 64d increases, the lifting body 64e descends. The fluid is preferably gas. The connecting part 64f connects the lifting body 64e to the support body 64b.

[0144] Support body 64b is connected to the upper end of shaft portion 63a of cleaning member 63. Support body 64b extends in a direction intersecting shaft portion 63a (e.g., horizontal direction). Force-applying body 64c is positioned higher than support arm 62. Support body 64b is positioned opposite a portion of support arm 62.

[0145] The force-applying body 64c is, for example, an elastic body such as a coil spring. The upper end of the force-applying body 64c is mounted on the support body 64b. The lower end of the force-applying body 64c is mounted on the support arm 62. When the fluid pressure in the cylinder 64d rises, the force-applying body 64c can apply a force to the lifting body 64e in the opposite direction to the direction of movement of the lifting body 64e (i.e., downward).

[0146] Figure 4 This is a schematic diagram illustrating the operation of the cleaning component 63 and the lifting mechanism 64.

[0147] like Figure 3 and Figure 4 As shown, the lifting mechanism 64 adjusts the internal pressure of the cylinder 64d by regulating, for example, the fluid supply flow rate from the fluid supply section (not shown) to the cylinder 64d, thereby causing the lifting body 64e to rise or fall. For example, increasing the internal pressure of the upper space of the lifting body 64e within the cylinder 64d causes the lifting body 64e to fall. Increasing the internal pressure of the lower space of the lifting body 64e causes the lifting body 64e to rise. An electro-pneumatic pressure regulating valve can be used, for example, to adjust the fluid supply flow rate.

[0148] The lifting mechanism 64 moves the cleaning component 63 (more specifically, the cleaning element 63c) to the rising position P1 (see reference) after it leaves the wafer W. Figure 3 ), and the falling position P2 that abuts the chip W (refer to Figure 4 The lifting mechanism 64 moves the entire support arm 62 up and down in the vertical direction according to the control signal from the control unit 67, thereby allowing the control unit 67 to also move the cleaning member 63 up and down.

[0149] The cleaning member rotating mechanism 65 has a rotating drive section 65a and a drive belt 65b. The rotating drive section 65a is, for example, a motor. The rotating drive section 65a is attached to the arm 62. The drive belt 65b transmits the driving force of the rotating drive section 65a to the shaft section 63a, and rotates the cleaning member 63 about the shaft (about the center axis C2).

[0150] As shown in Figure 1 , the arm rotating section 66 is, for example, a motor. The arm rotating section 66 rotates the arm 62 about the center axis C3 of the support 61. The center axis C3 is parallel to the center axis Cl.

[0151] Figure 5 is a schematic view illustrating an example of the operation of the arm 62. Figure 5 is a view (plan view) as viewed from a direction parallel to the center axis Cl. Figure 5 O shown in

[0152] As shown in Figure 5 , the arm rotating section 66 (see Figure 1 ) moves the arm 62 between the cleanable position P3 and the retracted position P4 by rotating the arm 62 about the support 61 as an axis. The cleanable position P3 is a position at which the cleaning member 63 overlaps the wafer W as viewed in plan. The retracted position P4 is a position at which the cleaning member 63 is away from the wafer W as viewed in plan. The cleaning member 63 moving between the cleanable position P3 and the retracted position P4 moves along a circular arc-shaped track Rl about the center axis C3. Further, to view in plan, for example, means to view in parallel to the thickness direction of the wafer W.

[0153] In the substrate cleaning apparatus 10, when the cleaning member 63 is at the retracted position P4, the wafer W can be attached to and detached from the substrate holding mechanism 40.

[0154] As shown in Figure 1 , the control section 67 generally controls the operation of the cleaning mechanism 60. The control section 67, for example, controls the operation of the lifting mechanism 64, the cleaning member rotating mechanism 65, the arm rotating section 66, and the like. The control section 67 can control the speed at which the cleaning member 63 is lowered by the lifting mechanism 64.

[0155] The cover 70 is formed in a cylindrical shape. The inner diameter of the cover 70 is larger than the outer diameter of the wafer W. The cover 70 can be configured to surround the wafer W held by the substrate holding mechanism 40 from the outer peripheral side. The portion of the cover 70 including the upper end gradually decreases in diameter as it goes upward. The cover 70 can withstand the cleaning liquid splashed when the wafer W is rotated.

[0156] The cover 70 is configured to be movable up and down, and can switch between a raised position in which the cover 70 surrounds the wafer W, and a lowered position in which the cover 70 is away from the wafer W. In the raised position, the upper end of the cover 70 is at a position higher than the wafer W.

[0157] Next, reference will be made toFigure 1 , Figure 3 and Figure 4 The method for cleaning wafer W using substrate cleaning apparatus 10 will be described.

[0158] like Figure 1 As shown, the wafer W is held in the substrate holding mechanism 40, and the wafer W is rotated about the central axis C1 by the rotating mechanism 50. Cleaning fluid is supplied to the surface of the wafer W by a cleaning fluid supply unit (not shown). Figure 3 As shown, in this stage, the cleaning unit 63 is at a rising position P1, which is higher than the wafer W.

[0159] The arm rotating part 66 causes the arm 62 to rotate as needed, using the support column 61 as an axis, and is positioned in the cleanable position P3 (the position where the cleaning element 63 overlaps with the wafer W when viewed from above). The cleaning element rotating mechanism 65 causes the cleaning element 63 to rotate about the central axis C2.

[0160] like Figure 4 As shown, the lifting mechanism 64, for example, increases the internal pressure of the cylinder 64d by adjusting the fluid supply flow rate from the fluid supply unit (not shown) to the cylinder 64d, thereby causing the lifting body 64e to descend. Since the cleaning component 63 is connected to the lifting body 64e, it also descends in conjunction with the lifting body 64e. The cleaning component 63c of the cleaning component 63 abuts against the upper surface of the wafer W. The position of the cleaning component 63 at this time is referred to as the descending position P2.

[0161] Because the support 64b is connected to the cleaning component 63, the support 64b also descends along with the cleaning component 63. As the support 64b descends and approaches the support arm 62, it compresses the force-applying body 64c.

[0162] The control unit 67 controls the speed at which the cleaning component 63 descends via the lifting mechanism 64. Figure 6 This diagram illustrates three examples of the time variation of the internal pressure command value of cylinder 64d sent from control unit 67 to a pressure regulator (not shown) that adjusts the internal pressure of cylinder 64d in the fluid supply unit. In the diagram, "double-line arrows only," "a combination of double-line and triple-line arrows," and "hollow arrows" respectively indicate the changes in the internal pressure command value of cylinder 64d in (Example 1), (Example 2), and (Comparative Example 1) described later. Figure 6 As shown, Examples 1, 2, and Comparative Example 1 respectively show that the control unit 67 increases the internal pressure of the cylinder 64d in multiple stages (specifically 5 or 6 stages) or without stages. In the initial stage, the cleaning element 63 is in the raised position P1 (refer to...). Figure 3 The internal pressure of cylinder 64d is 0 kPa (gauge pressure).

[0163] In the first stage SI, the internal pressure of the cylinder 64d is raised from 0 kPa to 11.8 kPa. In the second stage S2, the internal pressure of the cylinder 64d is raised from 11.8 kPa to 23.6 kPa. The average internal pressure of the cylinder 64d in the second stage S2 is greater than the average internal pressure of the cylinder 64d in the first stage SI. In the third stage S3, the internal pressure of the cylinder 64d is raised from 23.6 kPa to 35.4 kPa. The average internal pressure of the cylinder 64d in the third stage S3 is greater than the average internal pressure of the cylinder 64d in the second stage S2. In the fourth stage S4, the internal pressure of the cylinder 64d is raised from 35.4 kPa to 47.2 kPa. The average internal pressure of the cylinder 64d in the fourth stage S4 is greater than the average internal pressure of the cylinder 64d in the third stage S3. In the fifth stage S5, the internal pressure of the cylinder 64d is raised from 47.2 kPa to 59.0 kPa. The average internal pressure of the cylinder 64d in the fifth stage S5 is greater than the average internal pressure of the cylinder 64d in the fourth stage S4. The raising speed of the internal pressure in each of the stages from the first stage SI to the fifth stage S5 can be the same as each other.

[0164] At the end of the fifth stage S5, the cleaning member 63 (in detail, the cleaning part 63c) is close to the wafer W, but has not yet abutted against the wafer W.

[0165] Further, the number of stages at which the internal pressure of the cylinder 64d is raised stepwise is not particularly limited, and can be any number of 2 or more.

[0166] At the time of the raising of the internal pressure of the cylinder 64d in stages, a time-based interval tn can be provided. That is, an interval tn can be provided between the nth stage Sn and the (n+1)th stage Sn+1 (n: an integer of 1 to 4). The interval tn can be 0.1 seconds or more (for example, 0.1 seconds to 1 second). The internal pressure of the cylinder 64d in the interval can be constant.

[0167] The raising amplitude of the internal pressure in each of the stages from the first stage SI to the fifth stage S5 is constant, and the elastic reaction force of the force applying body 64c is increased from the first stage SI to the fifth stage S5 as the cleaning member 63 descends. Thus, the descending speed of the cleaning member 63 is gradually decreased in each stage. That is, the cleaning member 63 is decelerated in each stage. When the interval is provided, the descending speed of the cleaning member 63 is decreased in stages.

[0168] An interval at the time of the raising of the stages can also not be provided from the first stage SI to the fifth stage S5. The internal pressure command value of the cylinder 64d can be continuously raised in proportion to time, or can be raised in stages. The descending speed of the cleaning member 63 can be continuously decreased from the first stage SI to the fifth stage S5, or can be decreased in stages.

[0169] The control section 67 further increases the internal pressure of the cylinder 64d after the fifth stage S5. The internal pressure of the cylinder 64d shifts to the sixth stage S6 after the fifth stage S5. The internal pressure of the cylinder 64d is increased from 59.0 kPa to 74.9 kPa, for example, in the sixth stage S6. The average internal pressure of the cylinder 64d in the sixth stage S6 is greater than the average internal pressure of the cylinder 64d in the fifth stage S5.

[0170] The cleaning member 63 (specifically, the cleaning member 63c) reaches the lowered position P2 and abuts against the wafer W in the sixth stage S6. The lowering speed of the cleaning member 63 becomes the lowest at the lowered position P2 in the process from the raised position PI to the lowered position P2. The reaction force in the upward direction is applied to the cleaning member 63 by the elastic compression of the cleaning member 63c abutting against the wafer W at the lowered position P2. The elastic reaction force in the upward direction is also applied to the cleaning member 63 by the urging body 64c.

[0171] There can also be a time-based interval (interval t5) between the fifth stage S5 and the sixth stage S6. The interval t5 can be 0.3 seconds or more (for example, 0.3 seconds to 1 second). The internal pressure of the cylinder 64d can also be kept constant without being changed in the interval t5. The interval t5 between the fifth stage S5 and the sixth stage S6 is preferably longer than the intervals tl to t4 from the first stage Sl to the fifth stage S5.

[0172] In the case where the stroke of the lowering operation of the cleaning member is large, the load applied to the wafer when the cleaning member abuts against the wafer tends to be large.

[0173] Figure 1 The substrate cleaning apparatus 10 shown in FIGS. 1 to 8 has no expansion mechanism or the like in the support column 61, and thus the height of the support arm 62 does not change. Therefore, the cleaning member 63 is lowered only by the lifting mechanism 64. Thus, the substrate cleaning apparatus 10 can be said to have a configuration in which the stroke of the cleaning member 63 tends to be large. However, the substrate cleaning apparatus 10 can control the speed at which the cleaning member 63 is lowered by the control section 67. Thus, the speed at which the cleaning member 63 abuts against the wafer W can be reduced, and the load applied to the wafer W can be suppressed. Thus, the wafer W can be prevented from being damaged.

[0174] The support column 61 of the cleaning mechanism 60 of the substrate cleaning apparatus 10 has a simple configuration. Thus, the configuration for supporting the cleaning member 63 can be downsized, and the installation space can be reduced. Thus, the cleaning performance can be improved by adding a new cleaning mechanism to the space that is left empty. The substrate cleaning apparatus 10 can also reduce the cost because the support column 61 of the cleaning mechanism 60 has a simple configuration.

[0175] The substrate cleaning apparatus 10 can control the speed at which the cleaning member 63 descends via the control unit 67. Therefore, increasing the descent speed of the cleaning member 63 before it reaches the wafer W (for example, the descent speed from the first stage S1 to the fourth stage S4) can improve the efficiency of the cleaning process.

[0176] like Figure 6 As shown, the internal pressure of cylinder 64d increases in stages. Therefore, compared with the case where the internal pressure of cylinder 64d increases without stages, the descent speed of cleaning member 63 is suppressed when it approaches wafer W (at the end of the fifth stage S5). Therefore, it is possible to prevent cleaning member 63 from colliding with wafer W due to inertia.

[0177] Figure 1 The substrate cleaning apparatus 10 shown includes a cover 70 surrounding the wafer W. Therefore, in order to clean the wafer W, when the cleaning member 63 is moved from the retracted position P4 to the cleanable position P3, it is necessary to raise the cleaning member 63 to pass over the cover 70. Consequently, the stroke of the cleaning member 63 during descent becomes large. As described above, a large stroke of the cleaning member is detrimental to the load applied to the wafer. However, the substrate cleaning apparatus 10 can control the speed at which the cleaning member 63 descends via the control unit 67. Therefore, by appropriately controlling the speed at which the cleaning member 63 contacts the wafer W (reducing it), the load applied to the wafer W when the cleaning member 63 contacts the wafer W can be suppressed. Therefore, wafer W breakage can be prevented.

[0178] Therefore, the availability of the substrate cleaning apparatus 10 can be ensured, and multiple substrates can be continuously cleaned, thereby improving the operating rate of the apparatus.

[0179] The lifting mechanism 64 includes: a fluid supply unit (not shown); a cylinder 64d for supplying fluid; and a lifting body 64e for adjusting the height of the cleaning member 63 according to the fluid pressure in the cylinder 64d. Therefore, by adjusting the flow rate of the fluid supplied to the cylinder 64d, the internal pressure of the cylinder 64d can be adjusted, thereby causing the lifting body 64e to rise and fall. This simplifies the device structure. Furthermore, the descent speed of the cleaning member 63 can be precisely controlled.

[0180] The control unit 67 controls the descent speed of the cleaning component 63 by adjusting the flow rate of the fluid supplied to the cylinder 64d. Therefore, the descent speed of the cleaning component 63 can be set correctly.

[0181] The lifting mechanism 64 has a force-applying body 64c. Therefore, the descent speed of the cleaning component 63 can be controlled simply by constructing it.

[0182] The support arm 62 can be switched between a cleanable position P3 and a retracted position P4. Therefore, when the cleaning component 63 is in the retracted position P4, the wafer W can be installed and removed from the substrate holding mechanism 40. This improves the workability of cleaning the wafer W.

[0183] The substrate cleaning apparatus 10 has multiple (e.g., two) cleaning mechanisms 60. Therefore, the cleaning efficiency of the wafer W can be improved.

[0184] Figure 7 This is a schematic diagram of the cleaning component 63 and the lifting mechanism 164 used in the substrate cleaning apparatus 110 of the second embodiment. Additionally, regarding... Figure 3 The common components of the substrate cleaning apparatus 10 shown are marked with the same symbols and the description is omitted.

[0185] Lifting mechanism 164 and Figure 3 The difference in the lifting mechanism 64 shown is that a load sensor 165 is provided between the support body 64b and the connecting part 64f.

[0186] The lifting mechanism 164 includes a load sensor 165. For example, the load is detected by the load sensor 165, and the position of the cleaning member 63 can be selected based on the measured load value according to a formula representing the relationship between the load value stored in the load sensor or control unit 67 and the position P2 of the cleaning member 63. Furthermore, if there is a deviation between the target position of the cleaning member and the actual position of the cleaning member, a signal can be transmitted from the control unit 67 to activate the lifting mechanism 164 to change the position of the cleaning member. Therefore, the position can be corrected by always monitoring the position P2 of the cleaning member 63 (specifically, the cleaning component 63c) abutting the wafer W. Thus, it becomes easy to manage the increase in the load applied to the wafer W by the cleaning member 63.

[0187] The following describes the use of [the product / service] based on the embodiments and comparative examples. Figure 1 When the substrate cleaning apparatus 10 shown is used, it can suppress the load applied to the wafer W.

[0188] (Example 1)

[0189] use Figure 1 The substrate cleaning apparatus 10 shown performs cleaning of the wafer W under the conditions shown below.

[0190] The wafer W is rotated by the rotating mechanism 50, and as... Figure 6 As shown, the internal pressure of cylinder 64d is increased in five stages by the control unit 67. The internal pressure of cylinder 64d is transferred to the sixth stage S6 after the fifth stage S5. The cleaning member 63 comes into contact with the wafer W in the sixth stage S6. The intervals t1 to t4 between the first stage S1 and the fifth stage S5 are all 0.1 seconds. There is no interval set between the fifth stage S5 and the sixth stage S6.

[0191] Figure 8 This is a diagram illustrating the load applied to wafer W in Example 1. (As shown...) Figure 8As shown, the load applied to the wafer W increases when the cleaning unit 63 comes into contact with the wafer W (T1), but the increase is not high.

[0192] (Example 2)

[0193] Except for setting a 0.3-second interval t5 between the fifth stage S5 and the sixth stage S6, the wafer W is cleaned in the same manner as in Example 1.

[0194] Figure 9 This is a diagram illustrating the load applied to wafer W in Example 2. (As shown) Figure 9 As shown, the load applied to the wafer W did not increase significantly when the cleaning unit 63 came into contact with the wafer W.

[0195] (Comparative Example 1)

[0196] The internal pressure of cylinder 64d is increased from zero (no stage) in the initial stage to the highest value in the sixth stage S6. As a result, the cleaning element descends at a much faster rate than in Examples 1 and 2 before contacting the wafer. Other operations are the same as in Example 1.

[0197] Figure 10 This is a graph showing the load applied to the wafer in Comparative Example 1. (As shown) Figure 10 As shown, the load applied to the wafer increases significantly when the cleaning unit comes into contact with the wafer (T2). The increase in load is very large.

[0198] like Figure 8-10 As shown, in use Figure 1 In embodiments 1 and 2 of the substrate cleaning apparatus 10 shown, the load applied to the wafer W when the cleaning member 63 comes into contact with the wafer W can be suppressed. In particular, embodiment 2 can reduce the increase of the load applied to the wafer W.

[0199] This invention is not limited to the embodiments described above, and various modifications can be made without departing from the spirit of the invention. For example, the structure of the lifting mechanism is not limited to the aforementioned structure. The cleaning component can also be lifted and lowered using a lifting mechanism such as a ball screw or a servo motor. Furthermore, the cleaning component can also be a pad made of resin material or a brush component.

[0200] In the aforementioned cleaning method, the speed of the cleaning element as it descends from the rising position to the falling position is gradually reduced; however, the change in the descent speed of the cleaning element is not limited to this. For example, the cleaning element may descend from the rising position to the falling position at a constant first speed, and then descend at a second speed lower than the first speed until it contacts the wafer.

[0201] When adjusting the flow rate of the fluid supplied to the cylinder, the opening of the valve (not shown) located in the fluid supply path can also be adjusted.

[0202] The number of cleaning mechanisms included in the substrate cleaning apparatus is not limited to two, but can be one or more than three.

[0203] The substrate processing apparatus of the above embodiment is a polishing apparatus for polishing a wafer, but another substrate processing apparatus can be configured by replacing the plurality of polishing units with other substrate processing units. Examples of the "other substrate processing units" include a film forming processing unit (a plating processing unit, a CVD unit, etc.), a wet etching unit, a dry etching unit, and the like. In addition, different substrate processing units can be combined.

[0204] Figure 2 The primary cleaning assembly 201 and the secondary cleaning assembly 202 can have different structures. The primary cleaning assembly can be a roll cleaning type cleaning apparatus. The roll cleaning type cleaning apparatus includes a roll type cleaning member (a roll-shaped sponge) on each of the two sides of the substrate. The roll cleaning type cleaning apparatus can use the cleaning member to scrub both sides of the substrate.

[0205] Figure 3 The control section 67 can also obtain a signal that the cylinder 64d reaches a set internal pressure (the above-mentioned internal pressure command value) at each stage from a pressure sensor (not shown) connected to the inside of the cylinder 64d. The control section 67 can further output a command to the above-mentioned pressure adjuster of the fluid supply section so that the set internal pressure of the next stage is changed after waiting for a prescribed interval time.

[0206] In addition, the substrate cleaning apparatus of one embodiment can be a substrate cleaning apparatus including a substrate holder that rotatably holds a substrate in a vertical direction on a first shaft, a cleaning member supported on an arm so as to face the substrate held on the substrate holder, a driving device (an actuator or the like) that drives the cleaning member so as to approach and depart from the substrate, and a driving device that moves the cleaning member in a plane parallel to the surface of the substrate.

[0207] In addition, one embodiment can be a substrate processing apparatus that does not include a substrate polishing apparatus, but includes a substrate cleaning apparatus that performs cleaning and drying of a substrate subjected to dry processing.

[0208] In addition, in the modified one embodiment, the cleaning member 63 can be rotated while contacting the substrate W, and then the "torque" can be detected when the load cell becomes a load, and the speed of the cleaning member 63 at the time of lowering can be controlled in accordance with the measured value of the torque to change the position in the up-and-down direction of the cleaning member. As a result, it is possible to manage the increase in the load applied to the wafer W by the cleaning member 63.

[0209] In addition, the effects described in this specification are merely illustrative and are not limiting, and other effects can be included.

[0210] The above describes preferred embodiments of the present application, but the present application is not limited to these embodiments and examples. Additional, omission, substitution, and other changes of the structure can be made within the scope of the gist of the present application. The present application is not limited by the foregoing description, but only by the added patent claims.

Claims

1. A substrate cleaning apparatus, characterized in that, have: A substrate holding mechanism that holds the substrate; A rotating mechanism that rotates the substrate held in the substrate holding mechanism; and A cleaning mechanism that cleans the substrate. The cleaning mechanism has the following features: pillar; An outrigger extends from the support column, and the height of the outrigger remains constant. A cleaning component, which is supported by the support arm and cleans the surface by abutting against the surface of the substrate; A lifting mechanism that allows the cleaning component to move up and down relative to the support arm between an elevated position away from the substrate and a lowered position abutting the substrate. and The control unit controls at least the speed at which the cleaning component descends. The control unit reduces the speed of the cleaning component as it descends from the rising position to the falling position in multiple stages, and sets a time interval between the final stage when the cleaning component reaches the falling position and the stage preceding the final stage.

2. The substrate cleaning apparatus as described in claim 1, characterized in that, It also includes a cover that surrounds the substrate from the outer peripheral side.

3. The substrate cleaning apparatus as described in claim 1, characterized in that, The lifting mechanism has the following features: A fluid supply unit that supplies fluid; A cylinder, which is supplied with the fluid; and A lifting body that adjusts the height of the cleaning component based on the pressure of the fluid within the cylinder.

4. The substrate cleaning apparatus as described in claim 3, characterized in that, The control unit controls the speed at which the cleaning component descends by adjusting the amount of fluid supplied to the cylinder.

5. The substrate cleaning apparatus as described in claim 3, characterized in that, The lifting mechanism also includes a force-applying body that applies force to the lifting body in the opposite direction to the direction of movement of the lifting body when the pressure of the fluid increases.

6. The substrate cleaning apparatus as described in claim 1, characterized in that, The arm can rotate about the support pillar, switching between a washable position where the cleaning component overlaps with the substrate when viewed parallel to the thickness direction of the substrate, and a retracted position where the cleaning component moves away from the substrate.

7. The substrate cleaning apparatus as described in claim 1, characterized in that, It has multiple of the aforementioned cleaning mechanisms.

8. The substrate cleaning apparatus as described in claim 1, characterized in that, The time interval is 0.3 seconds or more.

9. A substrate processing apparatus, characterized in that, have: A substrate polishing apparatus for polishing a substrate; and The substrate cleaning apparatus of claim 7 cleans the substrate after it has been polished by the substrate grinding apparatus.

10. A substrate cleaning method, characterized in that, The substrate is cleaned using the substrate cleaning apparatus described in claim 1. The control system reduces the speed of the cleaning component as it descends from the rising position to the falling position in stages or continuously.

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