Electronic device and method for manufacturing electronic device

Abstract

The present invention provides an electronic device including a first substrate, an insulating layer, a light-emitting component, and a light-conversion component. The insulating layer is disposed on the substrate and includes an opening and a side wall surrounding the opening. The light-emitting component is disposed in the opening. The light-conversion component is disposed in the opening, wherein the height of the side wall is greater than or equal to the height of the light-conversion component. The electronic device of an embodiment of the present invention can provide an enhanced light-emitting effect and has a thinned thickness. The present invention also provides a method for manufacturing an electronic device.

Description

Technical Field

[0001] The invention relates to an electronic device and a method for manufacturing the electronic device. Background Art

[0002] Electronic products have become an indispensable necessity in modern society. With the booming development of such electronic products, consumers have high expectations for the quality, function or price of these products.

[0003] Therefore, electronic products need to be improved, such as introducing materials with wavelength conversion functions, but there are still some problems that need to be solved. Summary of the invention

[0004] The present invention is directed to an electronic device and a manufacturing method thereof, which can provide an improved light-emitting effect or manufacture a thinner electronic device.

[0005] According to an embodiment of the present invention, an electronic device includes a substrate, an insulating layer, a light-emitting component, and a light-conversion component. The insulating layer is disposed on the substrate and includes an opening and a sidewall surrounding the opening. The light-emitting component is disposed in the opening. The light-conversion component is disposed in the opening, wherein the height of the sidewall is greater than or equal to the height of the light-conversion component.

[0006] According to an embodiment of the present invention, a method for manufacturing an electronic device includes at least the following steps: providing a substrate; forming an insulating layer on the substrate; the insulating layer includes an opening and a sidewall surrounding the opening; disposing a light emitting component in the opening; disposing a light conversion component in the opening and the height of the sidewall is greater than or equal to the height of the light conversion component.

[0007] In summary, the electronic device of the embodiment of the present invention sets the light conversion component and the light emitting component in the opening surrounded by the side wall of the insulating layer. Therefore, the thickness of the electronic device of the embodiment of the present invention can be reduced. In some embodiments, the light conversion component can surround the light emitting component and use the light emitted from the side of the light emitting component to expand the light emitting area of ​​the electronic device and reduce the phenomenon of light concentration. Overall, the light emitting device of the embodiment of the present invention can provide an improved light emitting effect and enhance the quality of the electronic device. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] The accompanying drawings are included to provide a further understanding of the present invention and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the present invention and together with the description serve to explain the principles of the present invention.

[0009] Figures 1A to 1G A schematic diagram of a partial manufacturing process of an electronic device according to an embodiment of the present invention;

[0010] Figure 2A is a top view schematic diagram of an electronic device according to another embodiment of the present invention;

[0011] Figure 2B for Figure 2A A cross-sectional schematic diagram of an electronic device;

[0012] Figure 3 is a cross-sectional schematic diagram of an electronic device according to another embodiment of the present invention;

[0013] Figure 4 is a cross-sectional schematic diagram of an electronic device according to another embodiment of the present invention;

[0014] Figure 5 is a cross-sectional schematic diagram of an electronic device according to yet another embodiment of the present invention;

[0015] Figure 6 is a cross-sectional schematic diagram of an electronic device according to yet another embodiment of the present invention;

[0016] Figure 7 is a cross-sectional schematic diagram of an electronic device according to yet another embodiment of the present invention;

[0017] Figure 8 is a cross-sectional schematic diagram of an electronic device according to yet another embodiment of the present invention;

[0018] Fig. 9 FIG. 4 is a cross-sectional schematic diagram of an electronic device according to yet another embodiment of the present invention. DETAILED DESCRIPTION

[0019] A structure (or layer, component, substrate) described in the present invention is located on / above another structure (or layer, component, substrate), which may refer to the two structures being adjacent and directly connected, or may refer to the two structures being adjacent but not directly connected, and indirect connection means that there is at least one intermediate structure (or intermediate layer, intermediate component, intermediate substrate, intermediate interval) between the two structures, the lower surface of one structure is adjacent to or directly connected to the upper surface of the intermediate structure, and the upper surface of the other structure is adjacent to or directly connected to the lower surface of the intermediate structure, and the intermediate structure may be composed of a single-layer or multi-layer physical structure or a non-physical structure, without limitation. In the present invention, when a certain structure is arranged "on" another structure, it may refer to the certain structure being "directly" on the other structure, or to the certain structure being "indirectly" on the other structure, that is, at least one structure is sandwiched between the certain structure and the other structure.

[0020] The electrical connection or coupling described in the present invention may refer to direct connection or indirect connection. In the case of direct connection, the endpoints of the components on the two circuits are directly connected or connected to each other by conductor segments, and in the case of indirect connection, there are switches, diodes, capacitors, inductors, resistors, other suitable components, or combinations of the above components between the endpoints of the components on the two circuits, but it is not limited to these.

[0021] In the present invention, the thickness, length and width can be measured by an optical microscope, and the thickness can be measured by a cross-sectional image in an electron microscope, but it is not limited to this. In addition, any two values ​​or directions used for comparison may have a certain error. If the first value is equal to the second value, it implies that there may be an error of about 10% between the first value and the second value; if the first direction is perpendicular to the second direction, the angle between the first direction and the second direction may be between 80 degrees and 100 degrees; if the first direction is parallel to the second direction, the angle between the first direction and the second direction may be between 0 degrees and 10 degrees.

[0022] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0023] Figures 1A to 1G Schematic diagram of a partial manufacturing process of an electronic device according to an embodiment of the present invention. It should be understood that, according to some embodiments, additional operation steps may be provided before, during and / or after the manufacturing method of the electronic device of the present invention. According to some embodiments, some of the operation steps may be replaced or deleted. According to some embodiments, the order of the operation steps is interchangeable.

[0024] exist Figure 1AIn the embodiment, a substrate 110 is provided. The material of the substrate 110 may include glass, quartz, sapphire, ceramic, polyimide (PI), liquid crystal polymer (LCP) material, polycarbonate (PC), photosensitive polyimide (PSPI), polyethylene terephthalate (PET), other suitable materials, or a combination of the foregoing materials, but not limited thereto. In the present embodiment, an active device T, such as a thin film transistor, may be disposed on the substrate 110, but not limited thereto. In one embodiment, the active device T may include a semiconductor layer SE, a gate GE, a first source / drain SD1, and a second source / drain SD2. The semiconductor layer SE may be disposed on the substrate 110, the gate GE may overlap with the semiconductor layer SE along the normal direction of the substrate 110, and the semiconductor layer SE may be located between the gate GE and the substrate 110. The first source / drain SD1 and the second source / drain SD2 may be disposed on both sides of the gate GE and may contact different portions of the semiconductor layer SE, respectively. The reflective layer RA may be disposed adjacent to the active device T. The semiconductor layer SE may include an amorphous semiconductor (e.g., amorphous silicon), a polycrystalline semiconductor (e.g., polycrystalline silicon), an organic semiconductor material, a metal oxide (e.g., indium gallium zinc oxide), other suitable materials, or a combination of the above materials, but is not limited thereto. In some embodiments, the material of the semiconductor layer SE of at least one active device T in the electronic device may be different from the material of the semiconductor layer SE of other active devices T. The materials of the gate GE, the first source / drain SD1 and the second source / drain SD2 may include conductive materials, such as copper (Cu), silver (Ag), tin (Sn), aluminum (Al), molybdenum (Mo), tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt), titanium (Ti), copper alloys, silver alloys, tin alloys, aluminum alloys, molybdenum alloys, tungsten alloys, gold alloys, chromium alloys, nickel alloys, platinum alloys, titanium alloys, other suitable conductive materials, or combinations of the foregoing materials, but are not limited thereto.

[0025] In order to form the required electrical connection relationship, a plurality of dielectric layers D1 to D4, a shared line CE, a connecting electrode P1, a connecting electrode P2, a connecting electrode P3, and / or other electronic components may also be provided on the substrate 110. A reflective layer RA may also be provided on the substrate 110 to provide the required light reflection, and / or a light shielding layer LS may be provided to provide light shielding. The dielectric layer D1 may cover the semiconductor layer SE, and the gate GE may be provided on the dielectric layer D1. In other words, the dielectric layer D1 may be provided between the gate GE and the semiconductor layer SE to serve as a gate dielectric layer. In this embodiment, the shared line CE and the light shielding layer LS may also be provided on the dielectric layer D1, but are not limited thereto. The light shielding layer LS may be provided adjacent to the active component T. In one embodiment, the gate GE, the shared line CE, and the light shielding layer LS may be components made of the same film layer, but are not limited thereto. The dielectric layer D2 may be provided on the gate GE, the shared line CE, and the light shielding layer LS, and the dielectric layer D3 may be provided on the dielectric layer D2. The reflective layer RA, the connecting electrode P1, the first source / drain SD1 and the second source / drain SD2 may be disposed on the dielectric layer D3, but are not limited thereto. The through holes V1 and V2 may penetrate the dielectric layer D1, the dielectric layer D2 and the dielectric layer D3 and extend to the semiconductor layer SE, and the through hole V3 may penetrate the dielectric layer D2 and the dielectric layer D3 and extend to the shared line CE. The first source / drain SD1 and the second source / drain SD2 may be disposed in the through hole V1 and the through hole V2 and contact the semiconductor layer SE through the through hole V1 and the through hole V2. The connecting electrode P1 may be filled in the through hole V3 and contact the shared line CE through the through hole V3. The dielectric layer D4 is disposed on the dielectric layer D3. The dielectric layer D4 is disposed on the reflective layer RA, the connecting electrode P1, the first source / drain SD1 and the second source / drain SD2. The reflective layer RA, the connecting electrode P1, the first source / drain SD1 and the second source / drain SD2 can be made of the same film layer. That is, the reflective layer RA, the connecting electrode P1, the first source / drain SD1 and the second source / drain SD2 can have the same material. The connecting electrode P2 and the connecting electrode P3 are disposed on the dielectric layer D4. The through holes V4 and V5 penetrate the dielectric layer D4 and extend to the connecting electrode P1 and the second source / drain SD2 respectively. The connecting electrode P2 can be disposed in the through hole V4 and contact the connecting electrode P1. The connecting electrode P3 can be disposed in the through hole V5 and contact the second source / drain SD2. In one embodiment, at least one of the dielectric layers D1 to D4 can include a multilayer structure, but is not limited thereto. It should be noted that although the above description takes a top-gate active component as an example, the active component T in the present invention can also include a bottom-gate active component, a dual-gate active component, or other appropriate active components.

[0026] Continue to refer to Figure 1A, a first sublayer 122 may be formed on the substrate 110. Specifically, the first sublayer 122 may be formed on the dielectric layer D4, and the first sublayer 122 is patterned to have a sublayer opening 122S. The method for making the first sublayer 122, for example, includes forming a whole layer of insulating material layer on the substrate 110, and patterning the insulating material layer using a lithography process or a lithography-etching process to form the first sublayer 122. The method for forming the whole layer of insulating material layer may include coating, deposition, etc., but is not limited thereto. Here, the material forming the first sublayer 122 may include perfluoroalkoxy polymer resin (PFA), polymer (polymer film on array), fluoroelastomers, other appropriate materials, or a combination of the above materials, but is not limited thereto. The width of the sublayer opening 122S in the cross section may, for example, be larger the further away from the substrate 110, but is not limited thereto.

[0027] Next, please refer to Figure 1B, the light emitting component 130 may be disposed on the substrate 110. In the present embodiment, the light emitting component 130 may be disposed in the sub-layer opening 122S defined by the first sub-layer 122. In one embodiment, the light shielding layer LS may overlap the light emitting component 130, for example, along the normal direction of the substrate 110, and may block the light emitted from the light emitting component 130 toward the substrate 110. In the present invention, if not specifically stated, "overlap" may include "complete overlap" and "partial overlap". For example, the orthographic projection area of ​​the light emitting component 130 on the substrate 110 may overlap the orthographic projection area of ​​the light shielding layer LS on the substrate 110. In the present embodiment, the light emitting component 130 may include a light emitting diode, an organic light-emitting diode (OLED), a quantum dot (QD), a fluorescence material, a phosphor material, a micro light-emitting diode (micro light-emitting diode or mini light-emitting diode), a quantum dot light-emitting diode (QLED / QDLED), other suitable materials, or a combination of the above materials, but the present invention is not limited thereto. For example, the light emitting component 130 may include a first semiconductor layer 132, a second semiconductor layer 134, an active layer 136, a first electrode LE1, and a second electrode LE2, but is not limited thereto. The active layer 136 may be disposed between the first semiconductor layer 132 and the second semiconductor layer 134 to form a stacked structure DIE. The first electrode LE1 may be connected to the first semiconductor layer 132, and the second electrode LE2 may be connected to the second semiconductor layer 134. The first electrode LE1 and the second electrode LE2 may be located on a first side of the stack structure DIE, and the dielectric layer D4 may be located on a second side of the stack structure DIE, and the first side and the second side are opposite sides. However, in other embodiments, the arrangement direction of the light emitting element 130 and the electrode configuration position of the light emitting element 130 may be adjusted according to different designs. Figure 1B In one embodiment, the light emitting component 130 and the connection electrode P2, and / or the light emitting component 130 connection electrode P3 may be separated by a distance DE to reduce the probability of leakage. The range of the distance DE may take into account the variation of the routing process or the light emitting component transfer process. Therefore, the range of the distance DE may be between 0.1 micrometers (μm) and 10 micrometers (0.1μm≦DE≦10μm), such as 0.5 micrometers, 1 micrometer, 3 micrometers, 5 micrometers, or 7 micrometers, but is not limited thereto.

[0028] Please refer to Figure 1CAfter the light emitting element 130 is disposed on the substrate 110, an insulating material layer 124' may be formed on the substrate 110. The insulating material layer 124' may cover the light emitting element 130, the first sub-layer 122 and the dielectric layer D4, and the insulating material layer 124' fills the sub-layer opening 122S. The material of the insulating material layer 124' may include perfluoroalkoxy polymer resin (PFA), polymer film on array, fluoroelastomers, other appropriate materials, or a combination of the above materials, but is not limited thereto.

[0029] Next, please refer to Figure 1C and 1D , the insulating material layer 124' can be patterned to become the second sublayer 124, so that the second sublayer 124 is disposed on the first sublayer 122. The first sublayer 122 and the second sublayer 124 can constitute the insulating layer 120. The insulating layer 120 has an opening 120S, and the sidewall 120V of the insulating layer 120 can define the opening 120S. In the present invention, if not specifically stated, "surrounding" may include "completely surrounding" and "partially surrounding". The light-emitting component 130 can be disposed in the opening 120S. In the present embodiment, the second sublayer 124 can cover the top surface of the first sublayer 122 and also cover the sidewalls of the first sublayer 122. The opening 120S can have a non-fixed width. For example, the width of the opening 120S farther away from the substrate 110 can be greater than the width of the opening closer to the substrate 110. In other embodiments, the second sub-layer 124 may selectively cover only the top surface of the first sub-layer 122 without covering the sidewalls of the first sub-layer 122 .

[0030] Part of the insulating material layer 124' may cover the light emitting component 130 to form a coating layer 126. However, in other embodiments, the coating layer 126 may not be formed by patterning the insulating material layer 124', but may be made in other ways. Therefore, the material of the coating layer 126 may be the same as or different from the second sublayer 124. In this embodiment, a connecting electrode CLE1 and a connecting electrode CLE2 may be provided on the coating layer 126, wherein the connecting electrode CLE1 may be connected between the first electrode LE1 of the light emitting component 130 and the connecting electrode P2 on the substrate 110, and the connecting electrode CLE2 may be connected between the second electrode LE2 of the light emitting component 130 and the connecting electrode P3 on the substrate 110. In some embodiments, the light emitting component 130, the coating layer 126, and the connecting electrodes CLE1 and CLE2 may be made in other ways, and are not limited to the above-mentioned manufacturing method. The width of the opening 120S may be greater than the width of the light emitting element 130 and may also be greater than the width of the cladding layer 126 , so a gap G may be formed between the cladding layer 126 and the insulating layer 120 . Figure 1DIt can be known that the orthographic projection area of ​​the reflective layer RA on the substrate 110 may overlap the orthographic projection area of ​​the gap G on the substrate 110 .

[0031] In addition, in the present embodiment, a covering layer 140 may be selectively further formed on the substrate 110 to protect the connecting electrode CLE1 and the connecting electrode CLE2. For example, the covering layer 140 may cover the insulating layer 120 in addition to covering the connecting electrode CLE1 and the connecting electrode CLE2. Moreover, the covering layer 140 may extend into the gap G between the insulating layer 120 and the light emitting element 130. However, in other embodiments, the covering layer 140 may be omitted, or the covering layer 140 may be configured to only cover the connecting electrode CLE1 and the connecting electrode CLE2, but is not limited thereto. The material of the covering layer 140 may include silicon oxide, silicon nitride, silicon oxynitride, hafnium oxynitride, or a combination thereof. In one embodiment, the covering layer 140 may be a multilayer structure, and the multilayer structure may include layers of different materials. The thickness of the covering layer 140 may range from 0.05 μm to 1 μm (0.05 μm≦thickness≦1 μm), for example, 0.1 μm, 0.3 μm, or 0.7 μm.

[0032] Then as Figure 1E As shown, a light conversion component 150 may be formed on the substrate 110, and the light conversion component 150 may be disposed in the opening 120S of the insulating layer 120. The material of the light conversion component 150 may include quantum dot (QD) material, fluorescence material, phosphor material, other suitable materials, or a combination of the above materials, but is not limited thereto. Specifically, the method for forming the light conversion component 150 is, for example, to first fill the light conversion material into the opening 120S, and then solidify the light conversion material in the opening 120S to form the light conversion component 150. In this way, the light conversion component 150 and the light emitting component 130 may both be disposed in the opening 120S defined by the insulating layer 120. At least a portion of the light conversion component 150 may be located in the gap G between the light emitting component 130 and the insulating layer 120. For example, the light conversion component 150 may be located around the light emitting component 130 and may surround the light emitting component 130. The light conversion component 150 may have an arc-shaped top surface T150. In one embodiment, the center of the top surface T150 of the light conversion component 150 may be farther away from the substrate 110 than the periphery of the top surface T150, but the present invention is not limited thereto. In addition, the orthographic projection area of ​​the light conversion component 150 on the substrate 110 may overlap the orthographic projection area of ​​the reflective layer RA on the substrate 110.

[0033] The insulating layer 120 may define a plurality of openings 120S on the substrate 110. At this time, if the material of the light conversion component 150 is a quantum dot material, the materials of the light conversion components 150 in two adjacent openings 120S may be different. The material of the light conversion component 150 may include a red light quantum dot material, a green light quantum dot material, a blue light quantum dot material, other suitable materials, or a combination of the above materials, but is not limited thereto. For example, the light conversion component 150 in one opening 120S may be selectively a red light quantum dot material, while the light conversion component 150 in the adjacent opening 120S may be a green light quantum dot material, but is not limited thereto. In the present embodiment, the sidewall 120V of the insulating layer 120 may have a sufficient height H120 to reduce the situation where the materials of the light conversion components 150 in the adjacent openings 120S are mixed with each other. Therefore, the design of the present embodiment can improve the quality of the light conversion component 150. In the present embodiment, the height H120 of the sidewall 120V may be, for example, greater than or equal to the height H150 of the light conversion component 150. Here, the so-called height H120 of the side wall 120V may be the maximum distance between the side wall 120V of the insulating layer 120 and the surface of the substrate 110 in the cross-sectional structure. Meanwhile, the so-called height H150 of the light conversion component 150 may be regarded as the maximum distance from the position where the light conversion component 150 contacts the cover layer 140 on the insulating layer 120 to the surface of the substrate 110. When the cover layer 140 is omitted, the height H150 of the light conversion component 150 may be the maximum distance from the light conversion component 150 to the surface of the substrate 110. In one embodiment, the light conversion component 150 on the light emitting component 130 has a thickness TC along the normal direction of the substrate 110, and the thickness TC may be the maximum thickness of the portion of the light conversion component 150 overlapping the light emitting component 130 along the normal direction of the substrate 110. The thickness TC may be between 0.1 micrometers and 4 micrometers (0.1μm≦TC≦4μm). The light conversion component 150 has a width WC in the gap G along the normal direction perpendicular to the substrate 110, and the width WC may be the minimum width of the light conversion component 150 in the gap G. The width WC may be between 1 micron and 5 microns (1 μm≦WC≦5 μm). The ratio between the thickness TC and the width WC (TC / WC) may be between 0.25 and 50 (0.25≦TC / WC≦50), for example, 0.5, 1, 5, 10, 20, or 30, but is not limited thereto.

[0034] Then, if Figure 1F As shown in Figure 1EA protective layer 160 is further formed on the structure. The protective layer 160 can be disposed on a component located on the substrate 110, such as the insulating layer 120, the light-emitting component 130, and the light-converting component 150. The material of the protective layer 160 may include perfluoroalkoxy polymer resin (PFA), polymer film on array, fluoroelastomers, and other materials, but is not limited thereto. The protective layer 160 may, for example, have the function of slowing down the intrusion of water vapor, but is not limited thereto. Afterwards, as Figure 1G As shown, a filter layer 170 may be further disposed on the protective layer 160 to form the electronic device 100. In one embodiment, the filter layer 170 may only allow red light, green light, blue light, yellow light, or light within a specific wavelength range to pass through, but is not limited thereto. Figure 1G In the embodiment, the electronic device 100 may include a substrate 110, an insulating layer 120, a light emitting component 130, a cover layer 140, a light conversion component 150, a protective layer 160, and a filter layer 170. In one embodiment, the filter layer 170 may extend into the opening 120S, for example, by reducing the thickness of the light conversion component 150, reducing the thickness of the protective layer 160, and / or increasing the height H120.

[0035] The substrate 110 may be provided with components such as active components T, shared lines CE, light shielding layers LS, reflective layers RA, connecting electrodes P1, P2, and P3, wherein these components may be formed of different conductive layers, semiconductor layers, etc. Furthermore, the substrate 110 may be provided with dielectric layers D1 to D4 that separate different conductive layers.

[0036] The insulating layer 120 may be disposed on the substrate 110. The insulating layer 120 includes an opening 120S and a sidewall 120V surrounding the opening 120S. The insulating layer 120 may be a multi-layer stack, but is not limited thereto. In other embodiments, the insulating layer 120 may be a single-layer structure, or a multi-layer stack structure of three or more layers. In this embodiment, the insulating layer 120 may include a first sublayer 122 and a second sublayer 124, and the materials of the first sublayer 122 and the second sublayer 124 may be the same or different. In addition, the thickness of the first sublayer 122 may be greater than, equal to, or less than the thickness of the second sublayer 124. The materials of the first sublayer 122 and the second sublayer 124 may respectively include organic insulating materials, inorganic insulating materials, or a combination thereof.

[0037] The first sublayer 122 may be disposed on the substrate 110 and on the dielectric layer D4. The second sublayer 124 may be disposed on the first sublayer 122. For example, the first sublayer 122 may be located between the second sublayer 124 and the substrate 110. The second sublayer 124 may be disposed on the top surface and the sidewall of the first sublayer 122, so that the second sublayer 124 may substantially cover the first sublayer 122. After the second sublayer 124 is disposed, the first sublayer 122 may be more firmly disposed on the substrate 110 or may not be easily peeled off, which helps to improve the reliability of the electronic device 100. For example, in some embodiments, the material of the dielectric layer D4 may include an inorganic insulating material, and the material of the first sublayer 122 may include an organic insulating material. Due to the different material properties, the adhesion properties of the first sublayer 122 and the dielectric layer D4 may not be stable, and the first sublayer 122 may peel off from the dielectric layer D4. Therefore, the second sublayer 124 may be disposed to improve such problems. However, in other embodiments, the second sub-layer 124 may selectively not cover the sidewall of the first sub-layer 122 so that the sidewall of the first sub-layer 122 contacts other film layers, such as the cover layer 140 .

[0038] The light emitting component 130 may include a light emitting diode. The light emitted by the light emitting component 130 may be irradiated laterally toward the adjacent light conversion component 150. Figure 1G In the figure, a light-emitting component 130 is represented by only a single light-emitting diode, but in other embodiments, the light-emitting component 130 may include a plurality of light-emitting diodes, such as two, three, or four, but not limited thereto. In addition, the light-emitting component 130 may include a packaged light-emitting diode package. The light emitted by the light-emitting component 130 may include white light, blue light, green light, red light, and / or ultraviolet light, but not limited thereto. In addition, the light-emitting component 130 may be coated by a coating layer 126. In some embodiments, the coating layer 126 may be selectively made together with the second sub-layer 124. Therefore, the material of the coating layer 126 may be the same as that of the second sub-layer 124, but not limited thereto.

[0039] The cladding layer 126 may be disposed on the sidewall and top surface (the surface of the light emitting component 130 away from the substrate 110) of the light emitting component 130 to protect the light emitting component 130. In other embodiments, the cladding layer 126 may also be omitted, or the cladding layer 126 and the light emitting component 130 may be a prefabricated package. Therefore, the material of the cladding layer 126 may also be different from the second sublayer 124. The cladding layer 126 may be provided with a connecting electrode CLE1 and / or a connecting electrode CLE2 to electrically connect the light emitting component 130 to the connecting electrode P2 and the connecting electrode P3 provided on the substrate 110. The covering layer 140 may cover the second sublayer 124 of the insulating layer 120 and the cladding layer 126. The thickness of the covering layer 140 may range from 0.05 micrometers to 1 micrometer (0.05μm≦thickness≦1μm), for example, 0.1 micrometers, 0.3 micrometers, 0.5 micrometers, or 0.7 micrometers, but is not limited thereto. The cover layer 140 may cover the connection electrode CLE1 and the connection electrode CLE2 to protect the connection electrode CLE1 and the connection electrode CLE2. However, in other embodiments, the cover layer 140 may also be omitted. In addition, the light emitting component 130 may not be limited to being connected to the connection electrode P2 and the connection electrode P3 on the substrate 110 by the connection electrode CLE1 and the connection electrode CLE2, but may be connected to the connection electrode P2 and the connection electrode P3 on the substrate 110 by other means.

[0040] The orthographic projection area of ​​the cladding layer 126 on the substrate 110 may be smaller than the orthographic projection area of ​​the opening 120S on the substrate 110, so a gap G may be provided between the insulating layer 120 and the cladding layer 126. The light conversion component 150 may be disposed in the opening 120S of the insulating layer 120, and the light conversion component 150 may be at least partially disposed between the insulating layer 120 and the cladding layer 126. The height H120 of the sidewall 120V of the insulating layer 120 may be, for example, greater than or equal to the height H150 of the light conversion component 150. Figure 1G It can be seen that the light conversion component 150 can be disposed adjacent to the light emitting component 130, for example, the light conversion component 150 can surround the light emitting component 130. Specifically, the light conversion component 150 can completely surround the periphery of the light emitting component 130, or only surround a portion of the periphery of the light emitting component 130. The light conversion component 150 can have an arc-shaped top surface, such as a lens-shaped top surface, which helps to improve light uniformity.

[0041] The material of the light conversion component 150 may include fluorescent materials, phosphorescent materials, quantum dot materials, other suitable materials, or a combination of the above materials, but is not limited thereto. The wavelength range of the light emitted by the light emitting component 130 can, for example, excite the light conversion component 150. When the material of the light conversion component 150 is a quantum dot material, the light conversion component 150 can emit red light, green light, blue light, or other colors of light based on the selection of the quantum dot material (e.g., adjustment of the particle size). In this way, the light conversion component 150 disposed adjacent to the light emitting component 130 can widen the light emitting area of ​​the electronic device 100, which helps to improve the phenomenon of uneven light emitting effect caused by the concentration of the light emitting area.

[0042] In the present embodiment, a reflective layer RA is disposed on the substrate 110, and the orthographic projection area of ​​the reflective layer RA on the substrate 110 may be adjacent to the orthographic projection area of ​​the light emitting component 130 on the substrate 110, for example, the orthographic projection area of ​​the reflective layer RA on the substrate 110 may surround the orthographic projection area of ​​the light emitting component 130 on the substrate 110. The orthographic projection area of ​​the reflective layer RA on the substrate 110 may overlap the orthographic projection area of ​​the light conversion component 150 on the substrate 110 surrounding the light emitting component 130. In this way, the reflective layer RA may reflect the light emitted by the light conversion component 150 so that the light is emitted away from the substrate 110. This helps to improve the light extraction efficiency and improve the situation where the light traveling toward the substrate 110 cannot be used. The material of the reflective layer RA may include a metal material or a Bragg reflection structure formed by stacking multiple material layers, but is not limited thereto. In some embodiments, at least two of the reflective layer RA, the first source / drain SD1, and the second source / drain SD2 may be made of the same film layer. Therefore, the material of the reflective layer RA may be the same as that of the first source / drain SD1 and the second source / drain SD2 , such as a metal material.

[0043] The protective layer 160 can be disposed on the insulating layer 120 and the light conversion component 150. The protective layer 160 can have the function of slowing down the intrusion of water vapor and reducing the deterioration or damage of the light conversion component 150 due to the intrusion of water vapor. The filter layer 170 is disposed on the protective layer 160. The orthographic projection area of ​​the filter layer 170 on the substrate 110 can overlap the orthographic projection area of ​​the corresponding light conversion component 150 on the substrate 110. The material of the filter layer 170 may include a color resist material, such as a dye, a pigment, or other appropriate materials. In addition, the color of the filter layer 170 can match the corresponding light conversion component 150. For example, the light conversion component 150 and the filter layer 170 corresponding to the same opening 120S can be both red or both green. The filter layer 170 can also include a yellow color resist, overlapping with the green or red light conversion component 150. In other embodiments, the stacking order of the protective layer 160 and the filter layer 170 can be adjusted so that the filter layer 170 is located between the protective layer 160 and the light conversion component 150. The filter layer 170 can be partially disposed in the opening 120S defined by the insulating layer 120. In addition, in other embodiments, the protective layer 160 can be omitted. In other embodiments, another protective layer (not shown) can be further formed on the filter layer 170 so that the filter layer 170 is disposed between the two protective layers.

[0044] Figure 2A is a top view schematically showing an electronic device according to another embodiment of the present invention, and Figure 2B for Figure 2A Please also refer to Figure 2A and Figure 2B The electronic device 200 includes a substrate 110, an insulating layer 120, a light emitting component 130, a light conversion component 150, a protective layer 160, a filter layer 170 and a light shielding layer 280. Specifically, Figure 2A and Figure 2B The substrate 110, the insulating layer 120, the light emitting component 130, the light conversion component 150, the protective layer 160 and the filter layer 170 in the electronic device 200 are similar to Figure 1G The electronic device 100 is a device of the present invention, and therefore the details of the structure, properties, configuration relationship, manufacturing method, alternative embodiments, etc. of the above-mentioned components are not repeated here. For example, the material of the light shielding layer 280 may include a black matrix, a reflective material, or a combination thereof, but is not limited thereto. In addition, the substrate 110 of the present embodiment may include components such as an active component T, a shared line CE, a light shielding layer LS, a reflective layer RA, a connecting electrode P1, a connecting electrode P2, and a connecting electrode P3. Figure 2AIt can be seen that the light conversion component 150 can surround the light emitting component 130 in this embodiment, but it is not limited to this. In this embodiment, the electronic device 200 may further include a light shielding layer 280, and the light shielding layer 280 can be disposed on the insulating layer 120. Specifically, when the insulating layer 120 of the electronic device 200 defines a plurality of openings 120S, the electronic device 200 may have a plurality of filter layers 170, adjacent filter layers 170 may partially overlap and the light shielding layer 280 may be correspondingly disposed at the junction of two adjacent filter layers 170. The light shielding layer 280 may reflect or absorb light, but is not limited to this. The provision of the light shielding layer 280 can reduce the mutual interference of light emitted by the light conversion component 150 in two adjacent openings 120S, and help to enhance the light emitting effect. In addition, the electronic device 200 may omit the covering layer 140 in the electronic device 100. In this way, the light conversion component 150 may contact the side wall of the insulating layer 120, but it is not limited to this. In other embodiments, other film layers may be disposed between the light conversion component 150 and the insulating layer 120 .

[0045] Figure 3 This is a cross-sectional diagram of an electronic device according to another embodiment of the present invention. Figure 3 , the electronic device 300 is substantially similar to the electronic device 200, and the electronic device 300 may include a substrate 110, an insulating layer 120, a light emitting component 130, a light conversion component 150, a protective layer 160, a filter layer 170, and a light shielding layer 280. Therefore, the details of the structure, properties, configuration relationship, manufacturing method, alternative embodiments, etc. of the above components are not repeated here. Specifically, the substrate 110 of the electronic device 300 may include components such as an active component T, a shared line CE, a light shielding layer LS, a connecting electrode P1, a connecting electrode P2, and a connecting electrode P3, and the electronic device 300 also includes a reflective layer RB.

[0046] The material of the reflective layer RB may include metal or a Bragg reflection structure, but is not limited thereto. The metal material may include gold, silver, copper, aluminum, or other appropriate metals. The Bragg reflection structure may be a multi-layer stack structure, which may include a plurality of insulating layers with different refractive indices stacked. In the present embodiment, the reflective layer RB may be at least located in the gap G between the insulating layer 120 and the light-emitting component 130. The reflective layer RB may, for example, reflect the light from the light conversion component 150 so that the light is emitted away from the substrate 110. Therefore, the provision of the reflective layer RB helps to improve the light utilization efficiency. In addition, the reflective layer RB of the present embodiment may be further provided on the side wall 122V of the first sublayer 122, or even on the top surface 122T of the first sublayer 122. The second sublayer 124 of the insulating layer 120 may be provided on the first sublayer 122 and the reflective layer RB. Therefore, the reflective layer RB may be partially covered by the second sublayer 124. In other words, the reflective layer RB may be partially provided between the first sublayer 122 and the second sublayer 124. However, in other embodiments, the reflective layer RB may not be disposed on the first sub-layer 122, but only disposed in the gap G between the insulating layer 120 and the light emitting element 130. Since the reflective layer RB can provide a function similar to that of the reflective layer RA in the aforementioned embodiment, the reflective layer RA may be omitted on the substrate 110 in this embodiment.

[0047] Figure 4 FIG. 1 is a cross-sectional diagram of an electronic device according to another embodiment of the present invention. Figure 4 , the electronic device 400 is substantially similar to the electronic device 300, and the electronic device 400 may include a substrate 110, an insulating layer 120, a light emitting component 130, a light conversion component 150, a protective layer 160, a filter layer 170 and a light shielding layer 280. Therefore, the details of the structure, properties, configuration relationship, manufacturing method, alternative embodiments and the like of the above-mentioned components are no longer repeated here. Specifically, the substrate 110 of the electronic device 400 may include components such as an active component T, a shared line CE, a light shielding layer LS, a connecting electrode P1, a connecting electrode P2 and a connecting electrode P3, and the electronic device 400 also includes a reflective layer RC. The electronic device 400 of this embodiment is substantially similar to the electronic device 300, but the difference between the two embodiments mainly lies in the setting position of the reflective layer RC of this embodiment. In this embodiment, the reflective layer RC may include a metal reflective layer or a Bragg reflection structure. The reflective layer RC may be located in the gap G between the insulating layer 120 and the light emitting component 130. The reflective layer RC may be further disposed on the sidewall 120V of the insulating layer 120, or even on the top surface 120T of the insulating layer 120. The light shielding layer 280 may be disposed on the reflective layer RC.

[0048] Figure 5 FIG. 1 is a cross-sectional diagram of an electronic device according to another embodiment of the present invention. Figure 5, the electronic device 500 includes a substrate 110, an insulating layer 120, a light emitting component 130, a light conversion component 150, a protective layer 160, a filter layer 170, a light shielding layer 280 and a light shielding layer 590. Specifically, the substrate 110, the insulating layer 120, the light emitting component 130, the light conversion component 150, the protective layer 160, the filter layer 170 and the light shielding layer 280 in the electronic device 500 are similar to Figure 2B The electronic device 200, therefore, the details of the structure, properties, configuration relationship, manufacturing method, alternative embodiments and the like of the above-mentioned components are no longer repeated here. In addition, the substrate 110 of the present embodiment may include components such as an active component T, a shared line CE, a shading layer LS, a reflective layer RA, a connecting electrode P1, a connecting electrode P2 and a connecting electrode P3. In the present embodiment, the electronic device 500 may also include a shading layer 590, and the shading layer 590 may be disposed on the light-emitting component 130. In other words, the light-emitting component 130 may be located between the shading layer 590 and the substrate 110. The shading layer 590 may include a white shading layer, a black shading layer, a metal shading layer, a Bragg reflection structure, other appropriate shading layers, or a combination thereof, but is not limited thereto. In addition to the function of blocking light, the shading layer 590 may also reflect light. In one embodiment, when the shading layer 590 is a metal shading layer, an insulating layer or a dielectric layer (for example Figure 1G The partial covering layer 140 may be disposed between the light shielding layer 590 and the connection electrode CLE. By disposing the light shielding layer 590, the light emitted by the light emitting component 130 can irradiate the light conversion component 150 surrounding the light emitting component 130 in a higher proportion in a side direction, thereby improving the light conversion efficiency of the light conversion component 150.

[0049] Figure 6 FIG. 1 is a cross-sectional diagram of an electronic device according to another embodiment of the present invention. Figure 6 , the electronic device 600 includes a substrate 110, an insulating layer 120, a light emitting component 130A, a light conversion component 150, a protective layer 160, a filter layer 170 and a light shielding layer 280. Specifically, the substrate 110, the insulating layer 120, the light conversion component 150, the protective layer 160, the filter layer 170 and the light shielding layer 280 in the electronic device 600 are similar to Figure 2B Therefore, the structure, properties, configuration relationship, manufacturing method, alternative embodiments and other details of the above components are not repeated here. In addition, the substrate 110 of this embodiment may include active components T, shared lines CE, light shielding layers LS, reflective layers RA, connecting electrodes P1, connecting electrodes P2 and connecting electrodes P3. In this embodiment, the structure of the light emitting component 130A is substantially the same as Figure 1G or Figure 2B The light emitting assembly 130 is shown, but the arrangement direction of the light emitting assembly 130A is different from that of the previous embodiment.

[0050] Specifically, the light emitting component 130A may include a first semiconductor layer 132, a second semiconductor layer 134, an active layer 136, a first electrode LE1, and a second electrode LE2. The active layer 136 is disposed between the first semiconductor layer 132 and the second semiconductor layer 134. The first electrode LE1 may be connected to the first semiconductor layer 132, and the second electrode LE2 may be connected to the second semiconductor layer 134. The first electrode LE1 and the second electrode LE2 may be located on a side of the stack structure formed by the first semiconductor layer 132, the second semiconductor layer 134, and the active layer 136 facing the substrate 110. That is, compared with the aforementioned embodiment, the light emitting component 130A of this embodiment is disposed on the substrate 110 in an upside-down manner. At this time, after the light emitting component 130A is disposed on the substrate 110, the first electrode LE1 and the second electrode LE2 are not exposed on the top surface but are disposed between the stack structure and the substrate 110.

[0051] Figure 7 This is a cross-sectional diagram of an electronic device according to yet another embodiment of the present invention. Figure 7 , the electronic device 700 includes a substrate 110, an insulating layer 120, a light emitting component 130B, a light conversion component 150, a protective layer 160, a filter layer 170 and a light shielding layer 280. Specifically, the substrate 110, the insulating layer 120, the light conversion component 150, the protective layer 160, the filter layer 170 and the light shielding layer 280 in the electronic device 700 are similar to Figure 2B Therefore, the structure, properties, configuration relationship, manufacturing method, alternative embodiments and other details of the above components are not repeated here. In addition, the substrate 110 of this embodiment may include active components T, shared lines CE, light shielding layers LS, reflective layers RA, connecting electrodes P1, connecting electrodes P2 and connecting electrodes P3. In this embodiment, the structure of the light emitting component 130B is substantially the same as Figure 1G or Figure 2B The light emitting component 130 is shown, but the electrode arrangement of the light emitting component 130B is different from that of the previous embodiment.

[0052] Specifically, the light emitting component 130B may include a first semiconductor layer 132, a second semiconductor layer 134, an active layer 136, a first electrode LE1' and a second electrode LE2. The active layer 136 is disposed between the first semiconductor layer 132 and the second semiconductor layer 134. The first electrode LE1' may be connected to the first semiconductor layer 132, and the second electrode LE2 may be connected to the second semiconductor layer 134. The first electrode LE1' and the second electrode LE2 are respectively located at opposite sides of a stack structure formed by the first semiconductor layer 132, the second semiconductor layer 134 and the active layer 136. Thus, the first electrode LE1' may be located at a side of the light emitting component 130 away from the substrate 110, and the second electrode LE2 may be located at a side of the light emitting component 130 close to the substrate 110. Therefore, the second electrode LE2 may be directly connected to the connection electrode P3 and the first electrode LE1' may be connected to the connection electrode P2 on the substrate 110 through the connection electrode CLE1'. In other words, the light emitting component 130 may be a vertically configured light emitting diode.

[0053] Figure 8 FIG. 1 is a cross-sectional diagram of an electronic device according to another embodiment of the present invention. Figure 8 , the electronic device 800 includes a substrate 110, an insulating layer 120, a light emitting component 830, a light conversion component 150 and a light shielding layer 280. Specifically, the substrate 110, the insulating layer 120, the light conversion component 150 and the light shielding layer 280 in the electronic device 800 are similar to Figure 2B The electronic device 200 of the embodiment. The substrate 110 of the embodiment may include active components T, shared lines CE, reflective layers RA, connecting electrodes P1, connecting electrodes P2, and connecting electrodes P3. The details of the structure, properties, configuration relationship, manufacturing method, alternative embodiments, etc. of the above components are not repeated here. In addition, the embodiment may also selectively further include the protective layer 160 and the filter layer 170 of the above embodiments.

[0054] Specifically, the light emitting element 830 of the present embodiment may include a first light emitting diode 830A and a second light emitting diode 830B. In addition, the structure of at least one of the first light emitting diode 830A and the second light emitting diode 830B may be similar to any one of the aforementioned light emitting elements 130, 130A and 130B. Figure 8 In the embodiment, the first LED 830A and the second LED 830B have similar structures and arrangement directions as the light emitting element 130, but the present invention is not limited thereto. In one embodiment, the colors of the light emitted by the first LED 830A and the second LED 830B may be the same or different.

[0055] In the present embodiment, the first light emitting diode 830A and the second light emitting diode 830B may be coated by the coating layer 126. The first light emitting diode 830A includes a first semiconductor layer 832A, a second semiconductor layer 834A, and an active layer 836A disposed between the first semiconductor layer 832A and the second semiconductor layer 834A. The second light emitting diode 830B includes a first semiconductor layer 832B, a second semiconductor layer 834B, and an active layer 836B disposed between the first semiconductor layer 832B and the second semiconductor layer 834B. In addition to the connection electrodes P1 to P3, the substrate 110 is also provided with connection electrodes P4 and P5, and the connection electrodes P4 and P5 are similar to the connection electrodes P1 and P2, and are connected to the shared line CE. In addition, the electronic device 800 further includes connection electrodes CLE3 to CLE5. The connection electrode CLE3 can connect the first semiconductor layer 832A to the connection electrode P2 on the substrate 110. The connection electrode CLE4 can connect the second semiconductor layer 834A and the second semiconductor layer 834B to the connection electrode P3. The connection electrode CLE5 can connect the first semiconductor layer 832B to the connection electrode P4. In this embodiment, the first light emitting diode 830A and the second light emitting diode 830B can be disposed on the substrate 110 in the following manner: Figure 1B In addition, the coating layer 126 can be coated with the first light emitting diode 830A and the second light emitting diode 830B in the following manner: Figure 1C to Figure 1D The material of the cladding layer 126 can be, for example, the same as the second sublayer 124 of the insulating layer 120, but is not limited thereto. In addition, at least one of the reflective layer RB, the reflective layer RC, the cover layer 140, the protective layer 160 and the filter layer 170 described in the above embodiments can be selectively applied to this embodiment. It should be noted that although Figure 8 Only two light emitting components are shown, but more light emitting components may be disposed in one opening 120S according to actual needs, such as three or four, but not limited thereto.

[0056] Fig. 9 FIG. 1 is a cross-sectional diagram of an electronic device according to another embodiment of the present invention. Fig. 9 , the electronic device 900 includes a substrate 110, an insulating layer 920, a light emitting component 930, a light conversion component 150 and a light shielding layer 280. The substrate 110 of this embodiment may include an active component T, a shared line CE, a reflective layer RA, a connecting electrode P1, a connecting electrode P2, a connecting electrode P3 and a connecting electrode P4. Specifically, the substrate 110 and the light shielding layer 280 in the electronic device 900 are similar to Figure 8The substrate 110 and the light shielding layer 280. The details of the structure, properties, configuration relationship, manufacturing method, alternative embodiments, etc. of the above-mentioned components are not repeated here. In the present embodiment, the insulating layer 920 may include a first sublayer 122, a second sublayer 124 and a third sublayer 922, wherein the first sublayer 122 and the second sublayer 124 are substantially similar to the insulating layer 120 of the aforementioned embodiment, and therefore are not repeated. In the present embodiment, the electronic device 900 may further selectively include a protective layer 931, and a portion of the protective layer 931 is stacked on the third sublayer 922 to constitute a portion of the insulating layer 920, and another portion is located on the light-emitting component 930, but is not limited thereto. In addition, the light-emitting component 930 of the present embodiment includes a first light-emitting diode 830A and a second light-emitting diode 930B, wherein the first light-emitting diode 830A is substantially similar to the first light-emitting diode 830A of the aforementioned embodiment, and therefore are not repeated.

[0057] In this embodiment, the manufacturing method of the first sub-layer 122, the first light emitting diode 830A and the second sub-layer 124 is the same as the above Figures 1B to 1D Therefore, the second sublayer 124 can be disposed on the first sublayer 122. The cladding layer 126 can be disposed on the first light-emitting diode 830A. Part of the connecting electrode CLE3, the connecting electrode CLE4 and part of the connecting electrode CLE5 can be disposed on the cladding layer 126. Part of the connecting electrode CLE3 can extend into the cladding layer 126 and be connected to the connecting electrode P2. Part of the connecting electrode CLE4 can extend into the cladding layer 126 and be connected to the connecting electrode P3. Part of the connecting electrode CLE5 can extend into the cladding layer 126 and be connected to the connecting electrode P4. The cladding layer 126 may have an opening 126S in this embodiment. For example, the opening 126S may be located between the first light-emitting diode 830A and the connecting electrode CLE5.

[0058] The second light emitting diode 930B may be disposed in the opening 126S, and in this embodiment, after the second light emitting diode 930B is disposed on the substrate 110, a third sublayer 922 and a cladding layer 926 may be formed. The third sublayer 922 may be disposed on the second sublayer 124. The cladding layer 926 may be disposed on the second light emitting diode 930B, for example, to cover the second light emitting diode 930B, but is not limited thereto. The electronic device 900 may further include a connecting electrode CLE6 and a connecting electrode CLE7. Part of the connecting electrode CLE6 and the connecting electrode CLE7 may be disposed on the cladding layer 926. Part of the connecting electrode CLE6 and the connecting electrode CLE7 may extend into the cladding layer 926, but is not limited thereto. The connecting electrode CLE6 may connect the second light emitting diode 930B to the connecting electrode CLE4, and the connecting electrode CLE7 may connect the second light emitting diode 930B to the connecting electrode CLE5. In addition, the insulating layer 920 of the electronic device 900 may further include a protective layer 931. A portion of the protective layer 931 may be selectively disposed on the third sub-layer 922, and a portion may be disposed on the connection electrode CLE6 and / or the connection electrode CLE7 to protect the connection electrode CLE6 and the connection electrode CLE7. The sidewall 920V of the insulating layer 920 may be formed by the third sub-layer 922 and / or the sidewall and the sidewall of the protective layer 931, and the light emitting component 930 may be located in the opening 920S surrounded by the sidewall 920V.

[0059] A portion of the connecting electrode CLE6 can be regarded as a repair line segment RPL. When it is necessary to disconnect the first light-emitting diode 830A and the second light-emitting diode 930B, the repair line segment RPL can be cut off to achieve a repair effect. In some embodiments, after the first light-emitting diode 830A is set on the substrate 110, it is possible to first detect whether the first light-emitting diode 830A is normally emitting light. If the first light-emitting diode 830A can emit light normally, the second light-emitting diode 930B can be omitted. Therefore, the opening 126S of the cladding layer 126 may not be provided with the second light-emitting diode 930B and may be directly filled with the cladding layer 926, or filled with the material of the light conversion component 150. In certain embodiments in which the second light-emitting diode 930B is not provided in the opening 126S of the cladding layer 126, the protective layer 931 may be omitted. In other embodiments, if the first light-emitting diode 830A is found to be unable to emit light normally after detection, then Fig. 9As shown, a second light-emitting diode 930B may be disposed in the opening 126S. In addition, in some embodiments, the first light-emitting diode 830A may not be tested before the second light-emitting diode 930B is disposed, but the test may be performed after the second light-emitting diodes 930B are disposed on the substrate 110. At this time, if a failed second light-emitting diode 930B is found, the repair line segment RPL may be cut off to achieve a repair effect. Cutting off the repair line segment RPL may include laser cutting, but is not limited thereto. In addition, the configuration directions and structural types of the various light-emitting components of the aforementioned embodiments may be selectively applied to the present embodiment, and at least one of the reflective layer RB, the reflective layer RC, the covering layer 140, the protective layer 160 and the filter layer 170 described in the aforementioned embodiments may be selectively applied to the present embodiment.

[0060] According to the above, in the electronic device of the embodiment of the present invention, the light-emitting component and the light-conversion component are both arranged in the opening of the insulating layer. In this way, the light-conversion component is not limited to being arranged at a height higher than the light-emitting component, which helps to reduce the thickness of the electronic device. In addition, the light-conversion component can surround the light-emitting component and can be illuminated by the light from the side of the light-emitting component to excite the light-emitting wavelength. Such an arrangement helps to increase the light-emitting surface of the electronic device and reduce the situation where the light-emitting area is concentrated. Therefore, the electronic device of the embodiment of the present invention has an improved light-emitting effect.

[0061] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein by equivalents. These modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present invention. In addition, each claim constitutes an individual embodiment, and the scope of protection of the present invention also includes the combination of each claim and embodiment. Any embodiment or claim of the present invention is not required to achieve all the purposes, advantages, and features disclosed in the present invention.

Claims

1. An electronic device, characterized in that: include: substrate; A first connecting electrode is arranged on the substrate; An insulating layer, disposed on the substrate and comprising an opening and a sidewall surrounding the opening; A light emitting component is disposed in the opening; A coating layer, disposed on the top surface of the light-emitting component and the side wall of the light-emitting component and coating the light-emitting component; A light conversion component is disposed in the opening, wherein at least a portion of the light conversion component is disposed between the insulating layer and the cladding layer, and the cladding layer covers the first connecting electrode; as well as The second connecting electrode is arranged on the coating layer, wherein the cladding layer comprises a first through hole and a second through hole, and the second connecting electrode is electrically connected to the light emitting component and the first connecting electrode via the first through hole and the second through hole; The height of the side wall is greater than or equal to the height of the light conversion component.

2. The electronic device according to claim 1, characterized in that: The light conversion component surrounds the light emitting assembly.

3. The electronic device according to claim 1, characterized in that: The insulating layer is a multi-layer stack.

4. The electronic device according to claim 3, characterized in that: The insulating layer includes a first sub-layer and a second sub-layer, the first sub-layer is disposed on the substrate, and the second sub-layer covers the first sub-layer.

5. The electronic device according to claim 1, characterized in that: The light emitting component includes at least two light emitting diodes.

6. The electronic device according to claim 1, characterized in that: The invention also comprises a reflective layer, which is arranged between the substrate and the light conversion component.

7. The electronic device according to claim 1, characterized in that: The invention also comprises a light shielding layer which is arranged on the insulating layer.

8. The electronic device according to claim 1, characterized in that: It also includes a light shielding layer overlapping the light emitting component.

9. The electronic device according to claim 1, characterized in that: It also includes a filter layer, which is arranged on the substrate, and the light conversion component is located between the filter layer and the substrate.

10. A method for manufacturing an electronic device, characterized in that: include: providing a substrate; Providing a first connecting electrode, disposed on the substrate; forming an insulating layer on the substrate, the insulating layer comprising an opening and a sidewall surrounding the opening; Disposing a light emitting component in the opening; A coating layer, disposed on the top surface of the light-emitting component and the side wall of the light-emitting component and coating the light-emitting component; Disposing a light conversion component in the opening, wherein at least a portion of the light conversion component is disposed between the insulating layer and the cladding layer, and the cladding layer covers the first connecting electrode; as well as A second connecting electrode is provided on the coating layer, The cladding layer includes a first through hole and a second through hole, and the second connecting electrode is electrically connected to the light emitting component and the first connecting electrode via the first through hole and the second through hole. The height of the side wall is greater than or equal to the height of the light conversion component.

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