A highly integrated IPM packaging structure

Abstract

The present invention discloses a highly integrated IPM packaging structure, comprising a chip carrier and an IPM module fixed on the chip carrier, wherein the outer surfaces of the chip carrier and the IPM module are covered with a plastic package shell for packaging, wherein the IPM module is composed of three IPM units with identical structures to form a three-phase inverter output; wherein the IPM unit comprises an upper tube power arm unit and a lower tube power arm unit respectively arranged on both sides of an insulating gasket, wherein the upper tube power arm unit and the lower tube power arm unit are connected via a copper bridge, wherein the upper tube power arm unit comprises an upper tube IGBT chip, a FWD chip, a high-voltage driver chip, and a copper bridge arranged between the chips for connecting, wherein the upper tube IGBT chip is arranged on the upper surface of the insulating gasket via the copper bridge, the high-voltage driver chip is arranged on the copper bridge and connected to the copper bridge and the gate of the upper tube IGBT chip via a gold wire to connect with the copper bridge and control the switching of the upper tube IGBT chip.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor packaging, and in particular to a highly integrated IPM packaging structure. Background Art

[0002] Intelligent Power Module (IPM), short for Intelligent Power Module, is a power-driven semiconductor package structure that combines power electronics and integrated circuit technologies. Compared to traditional discrete semiconductor packages, IPMs are gaining increasing popularity due to their high integration and reliability. Traditional IPMs typically assemble various electronic components onto a planar substrate. However, as semiconductor packaging structures evolve towards smaller and more integrated designs, increasing the integration and size of IPMs is a growing concern for engineers. Driven by green environmental strategies, frequency conversion technology is shifting from speed regulation to energy conservation. With the advancement of frequency converter technology and the continuous increase in power levels, the use of multiple power components inevitably increases the size of the converter, increasing design complexity and increasing costs.

[0003] With the development of power electronics technology, the demand for miniaturization of power electronics systems is becoming increasingly prominent. In existing technologies, traditional modules use wire bonding for electrical connection, which can lead to high stray inductance, fatigue damage at the bond points, insufficient current carrying capacity, and low efficiency. Furthermore, the wire bonding process can cause aluminum shavings, chip pitting, wire disconnection, and wire collapse, among other module reliability issues that have not been fully addressed. Furthermore, this connection method significantly limits the further miniaturization of IPM modules. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to provide a highly integrated IPM packaging structure in response to the above-mentioned defects of the prior art, so as to solve the technical problem that the process and module cannot be further miniaturized due to the use of wire bonding technology in traditional modules.

[0005] The purpose of the present invention is to achieve the following technical solution: a highly integrated IPM packaging structure, comprising a chip carrier and an IPM module fixed on top of the chip carrier, wherein the outer surfaces of the chip carrier and the IPM module are covered with a plastic package for packaging, the chip carrier is an insulating gasket, and the IPM module is composed of three IPM units with the same structure to form a three-phase inverter output; the IPM unit includes an upper tube power arm unit and a lower tube power arm unit respectively arranged on both sides of the insulating gasket, and the upper tube power arm unit and the lower tube power arm unit are connected by a copper bridge, The upper tube power arm unit includes an upper tube IGBT chip, an FWD chip, a high-voltage driver chip and a copper bridge arranged between the chips for connecting purposes. The upper tube IGBT chip is arranged on the upper surface of the insulating gasket through the copper bridge, and the FWD chip is stacked on the side of the upper tube IGBT chip away from the insulating gasket through the copper bridge. The high-voltage driver chip is arranged on the copper bridge and connected to the copper bridge and the gate of the upper tube IGBT chip through gold wire to connect with the copper bridge and control the disconnection of the upper tube IGBT chip; the copper bridge on one side of the upper tube power arm unit extends to the outside of the plastic package shell to serve as the input end.

[0006] Furthermore, the lower tube power arm unit includes a lower tube IGBT chip, an FWD chip, a low-voltage driver chip and a copper bridge arranged between the chips for connecting purposes. The lower tube IGBT chip is arranged on the upper surface of the insulating gasket through the copper bridge, and the FWD chip is stacked on the side of the lower tube IGBT chip away from the insulating gasket through the copper bridge. The low-voltage driver chip is arranged on the copper bridge and connected to the copper bridge and the gate of the lower tube IGBT chip through gold wire to connect with the copper bridge and control the disconnection of the lower tube IGBT chip; the copper bridge on one side of the lower tube power arm unit extends to the outside of the plastic package shell to serve as an output end.

[0007] Furthermore, a heat dissipation copper sheet is provided at the bottom of the insulating gasket for improving the heat dissipation effect of the packaging structure.

[0008] Furthermore, the plastic package shell packages the chip carrier and the IPM module by injecting packaging resin, and the height of the plastic package shell is not lower than the top of the chip.

[0009] The beneficial technical effect of the present invention is that the IPM packaging structure described in the present invention abandons the traditional method of bonding aluminum wires to implement circuit topology, effectively solves the process problems caused by traditional bonding aluminum wires, and also improves the power density of the overall IPM module, providing a solution for the miniaturization of the system. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 This is a process flow chart of the IPM packaging structure of the present invention;

[0011] Figure 2 This is a schematic diagram of the IPM packaging structure circuit of the present invention;

[0012] Figure 3 This is a schematic diagram of the IPM packaging structure of the present invention. DETAILED DESCRIPTION

[0013] In order to enable those skilled in the art to more clearly understand the objectives, technical solutions and advantages of the present invention, the present invention is further described below with reference to the accompanying drawings and embodiments.

[0014] In the description of the present invention, it should be understood that the orientations or positional relationships indicated by terms such as “upper”, “lower”, “left”, “right”, “inside”, “outside”, “horizontal” and “vertical” are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention, rather than indicating or implying that the device or component referred to must have a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0015] like Figure 1-3 As shown, a highly integrated IPM packaging structure according to the present invention includes a chip carrier and an IPM module fixed on top of the chip carrier, and the outer surface of the chip carrier and the IPM module is covered with a plastic package 1 for packaging. The chip carrier is an insulating gasket 2. The IPM module is composed of three IPM units with the same structure to form a three-phase inverter output; the IPM unit includes an upper tube power arm unit 3 and a lower tube power arm unit 4 respectively arranged on both sides of the insulating gasket (as shown in FIG. Figure 2 As shown, IGBT1~ IGBT3 are upper tube power arm units, IGBT4~ IGBT6 is an upper tube power arm unit), the upper tube power arm unit 3 and the lower tube power arm unit 4 are connected by a copper bridge 5. The copper bridge 5 used for the docking circuit topology is responsible for connecting the IGBT chip, the FWD chip and the output and output lead-out ports, and serves to fix the connected chips and form a complete bridge arm switch unit with the IGBT chip unit; the upper tube power arm unit 3 includes an upper tube IGBT chip 6, a FWD chip 7, a high-voltage driver chip 8 and a copper bridge 5 arranged between the chips for connecting. The upper tube IGBT chip 6 is arranged on the upper surface of the insulating gasket 2 through the copper bridge, and the FWD chip 7 is stacked on the side of the upper tube IGBT chip 6 away from the insulating gasket 2 through the copper bridge 5. The high-voltage driver chip 8 is arranged on the copper bridge 5 and connected to the copper bridge and the gate of the upper tube IGBT chip 6 through a gold wire 9 to connect with the copper bridge and control the disconnection of the upper tube IGBT chip 6; the copper bridge on one side of the upper tube power arm unit 3 extends to the outside of the plastic package housing 1 to serve as an input end.

[0016] Reference Figure 2-3As shown, the lower tube power arm unit 4 includes a lower tube IGBT chip 10, an FWD chip 7, a low-voltage driver chip 11 and a copper bridge 5 arranged between the chips for connecting purposes. The lower tube IGBT chip 10 is arranged on the upper surface of the insulating gasket 2 through the copper bridge, and the FWD chip 7 is stacked on the side of the lower tube IGBT chip 40 away from the insulating gasket 2 through the copper bridge. The low-voltage driver chip 11 is arranged on the copper bridge and connected to the copper bridge and the gate of the lower tube IGBT chip 10 through a gold wire 9 to connect with the copper bridge and control the disconnection of the lower tube IGBT chip 10; the copper bridge on one side of the lower tube power arm unit 4 extends to the outside 1 of the plastic package shell to serve as an output end.

[0017] Reference Figure 3 As shown, a heatsink copper sheet 12 is provided at the bottom of the insulating gasket 2 to enhance the heat dissipation of the packaging structure. The plastic housing 1 encapsulates the chip carrier and IPM module by injecting encapsulating resin, and the height of the plastic housing is no lower than the top of the chip. Furthermore, the FWD chip is stacked on the IGBT chip, and the second chip is a flip-chip. It is worth noting that the copper bridge prevents damage to the IGBT chip during packaging, while ensuring the IGBT chip's overcurrent capability and supporting the FWD chip, thus ensuring the stability of the chip stack formed by the FWD and IGBT chips.

[0018] The IPM packaging structure described in the present invention abandons the traditional method of bonding aluminum wires to implement circuit topology, effectively solving the process problems caused by traditional bonding aluminum wires, while also improving the power density of the overall IPM module, providing a solution for system miniaturization.

[0019] The specific embodiments described herein are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by one of ordinary skill in the art without departing from the spirit and technical concepts disclosed herein are intended to be covered by the claims of the present invention.

Claims

1. A highly integrated IPM packaging structure, comprising a chip carrier and an IPM module fixed on top of the chip carrier, wherein the outer surfaces of the chip carrier and the IPM module are covered with a plastic package for packaging, characterized in that: The chip carrier is an insulating gasket, and the IPM module is composed of three IPM units with the same structure to form a three-phase inverter output; the IPM unit includes an upper tube power arm unit and a lower tube power arm unit respectively arranged at both ends of the insulating gasket, and the upper tube power arm unit and the lower tube power arm unit are connected by a first copper bridge, and the upper tube power arm unit includes an upper tube IGBT chip, an upper tube FWD chip, and a high-voltage driver chip. The upper tube IGBT chip is arranged on the upper surface of the insulating gasket through the second copper bridge, and the FWD chip is stacked on the side of the upper tube IGBT chip away from the insulating gasket through the first copper bridge. The high-voltage driver chip is arranged on the fourth copper bridge and connected to the fourth copper bridge and the gate of the upper tube IGBT chip through a gold wire to communicate with the fourth copper bridge and control the disconnection of the upper tube IGBT chip, and the fourth copper bridge extends out of the plastic package shell; The upper tube FWD chip is connected to the second copper bridge through the third copper bridge on its upper side, and the second copper bridge on one side of the upper tube power arm unit extends outside the plastic package to serve as an input end; the lower tube power arm unit includes a lower tube IGBT chip, a lower tube FWD chip, and a low-voltage driver chip. The lower tube IGBT chip is arranged on the upper surface of the insulating gasket through the first copper bridge, and the lower tube FWD chip is stacked on the side of the lower tube IGBT chip away from the insulating gasket through the seventh copper bridge. The low-voltage driver chip is arranged on the eighth copper bridge and connected to the eighth copper bridge and the gate of the lower tube IGBT chip through a gold wire to connect with the eighth copper bridge and control the disconnection of the lower tube IGBT chip. The eighth copper bridge extends outside the plastic package; the lower tube FWD is connected to the first copper bridge through the sixth copper bridge on its upper side, and the first copper bridge on one side of the lower tube power arm unit extends outside the plastic package to serve as an output end.

2. The highly integrated IPM packaging structure according to claim 1, wherein: A heat dissipation copper sheet is provided at the bottom of the insulating gasket to improve the heat dissipation effect of the packaging structure.

3. The highly integrated IPM packaging structure according to claim 2, wherein: The plastic package shell packages the chip carrier and the IPM module by injecting packaging resin, and the height of the plastic package shell is not lower than the top of the chip.

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