Organic light-emitting diode display devices

Abstract

An organic light emitting diode display device includes: a substrate, a pixel structure, a lower barrier member, an upper barrier member, and a metal member. The substrate includes a display area and a peripheral area. The pixel structure is on the substrate in the display area. The lower barrier member is on the substrate in the peripheral area and surrounds the pixel structure, and includes a first side surface, a second side surface, and a top surface adjacent to the pixel structure. The upper barrier member is on the top surface and the second side surface of the lower barrier member, and forms a first barrier structure with the lower barrier member. The metal member is between the first barrier structure and the substrate, and is in contact with the bottom surface of the upper barrier member on the second side surface of the lower barrier member.

Description

Technical Field

[0001] The exemplary embodiments generally relate to an organic light emitting diode display device and more particularly to an organic light emitting diode display device including a blocking member. Background Art

[0002] Flat panel display devices are replacing cathode ray tube display devices due to their light weight and thin characteristics. For example, such flat panel display devices include liquid crystal display devices and organic light emitting diode display devices.

[0003] Recently, a flexible organic light emitting diode display device has been developed. In the organic light emitting diode display device, a lower substrate and an upper substrate are formed of a flexible material so that a portion of the organic light emitting diode display device can be bent or folded. For example, the lower substrate may include a flexible substrate, and the upper substrate may include a thin film encapsulation structure. In this case, the thin film encapsulation structure may have a structure in which an inorganic layer and an organic layer are alternately stacked, and a blocking structure may be arranged at a peripheral portion of the flexible organic light emitting diode display device to prevent backflow of the organic layer. Summary of the invention

[0004] As the etchant used in the process of manufacturing the lower electrode of the flexible organic light emitting diode display device is changed, the roughness of the insulating layer arranged under the blocking structure can be relatively reduced so that the contact surface between the blocking structure and the insulating layer can be reduced, which may cause contact failure, and as a result, failure of the flexible organic light emitting diode display device may occur.

[0005] Some exemplary embodiments provide an organic light emitting diode display device including a blocking member.

[0006] According to an exemplary embodiment, an organic light emitting diode display device includes: a substrate, a pixel structure, a lower barrier member, an upper barrier member, and a metal member. The substrate includes a display area and a peripheral area. The pixel structure is arranged on the substrate in the display area. The lower barrier member is arranged on the substrate in the peripheral area and surrounds the pixel structure, and includes a first side surface adjacent to the pixel structure, a second side surface opposite to the first side surface, and a top surface arranged between the first side surface and the second side surface. The upper barrier member is arranged on the top surface and the second side surface of the lower barrier member, and together with the lower barrier member, constitutes a first barrier structure. The metal member is arranged between the first barrier structure and the substrate, and contacts the bottom surface of the upper barrier member arranged on the second side surface of the lower barrier member.

[0007] In an exemplary embodiment, the organic light emitting diode display device may further include: an insulating interlayer disposed between the first barrier structure and the substrate, and the insulating interlayer may include an inorganic material. The metal member may be disposed between the bottom surface of the upper barrier member and the insulating interlayer and prevent the bottom surface of the upper barrier member from contacting the insulating interlayer.

[0008] In an exemplary embodiment, the organic light emitting diode display device may further include: a second blocking structure arranged in the peripheral area on the substrate while being spaced apart from the first side surface of the lower barrier member in a first direction, the first direction being a direction from the peripheral area to the display area.

[0009] In an exemplary embodiment, the organic light emitting diode display device may further include: a first power supply line disposed between the second barrier structure and the substrate.

[0010] In an exemplary embodiment, the organic light emitting diode display device may further include: a connecting electrode arranged between the second blocking structure and the first power line, and the connecting electrode may extend in a second direction opposite to the first direction and be arranged on at least a portion of the top surface of the lower blocking member and the first side surface.

[0011] In exemplary embodiments, the upper barrier member may extend in the first direction and be disposed on a first side surface of the lower barrier member, and a bottom surface of the upper barrier member may be further disposed on the first side surface of the lower barrier member and contact the connection electrode.

[0012] In an exemplary embodiment, the upper barrier member may completely overlap the lower barrier member in a plan view so that the lower barrier member is prevented from being exposed.

[0013] In exemplary embodiments, the connection electrode may be disposed on the second side surface of the lower barrier member, and the connection electrode may contact the metal member.

[0014] In an exemplary embodiment, the connection electrode may completely overlap the lower barrier member in a plan view so that the lower barrier member is prevented from being exposed.

[0015] In an exemplary embodiment, the organic light emitting diode display device may further include: a semiconductor element arranged in the display area on the substrate while being spaced apart from the first power line in the first direction; and a second power line arranged between the first power line and the semiconductor element on the substrate.

[0016] In an exemplary embodiment, the pixel structure may include a lower electrode disposed on the semiconductor element, a light emitting layer disposed on the lower electrode, and an upper electrode disposed on the light emitting layer, and the connection electrode may extend in the first direction and contact the upper electrode.

[0017] In an exemplary embodiment, the organic light emitting diode display device may further include: a first inorganic thin film encapsulation layer, an organic thin film encapsulation layer, and a second inorganic thin film encapsulation layer. The first inorganic thin film encapsulation layer may be arranged on the upper electrode, the first barrier structure, and the second barrier structure, and the organic thin film encapsulation layer may be arranged on the first inorganic thin film encapsulation layer. The second inorganic thin film encapsulation layer may be arranged on the first inorganic thin film encapsulation layer and the organic thin film encapsulation layer, and may constitute a thin film encapsulation structure together with the first inorganic thin film encapsulation layer and the organic thin film encapsulation layer.

[0018] According to an exemplary embodiment, an organic light emitting diode display device includes: a substrate, a pixel structure, a lower barrier member, an upper barrier member, and a connecting electrode. The substrate includes a display area and a peripheral area. The pixel structure is arranged on the substrate in the display area. The lower barrier member is arranged on the substrate in the peripheral area and surrounds the pixel structure, and includes a first side surface adjacent to the pixel structure, a second side surface opposite to the first side surface, and a top surface arranged between the first side surface and the second side surface. The upper barrier member is arranged on the lower barrier member and constitutes a first barrier structure together with the lower barrier member. The connecting electrode is arranged on the first side surface and the top surface of the lower barrier member, and is arranged between the lower barrier member and the upper barrier member, and completely overlaps with the top surface of the lower barrier member in a plan view.

[0019] In an exemplary embodiment, the upper barrier member may extend in a first direction and be disposed on a first side surface of the lower barrier member, the first direction being a direction from the peripheral area to the display area, and a bottom surface of the upper barrier member may be further disposed on the first side surface of the lower barrier member and contact the connection electrode.

[0020] In exemplary embodiments, the connection electrode may extend in a second direction opposite to the first direction and be disposed on the second side surface of the lower barrier member.

[0021] In an exemplary embodiment, the connection electrode may completely overlap the lower barrier member in a plan view so that the lower barrier member is prevented from being exposed.

[0022] In exemplary embodiments, the upper barrier member may extend in the second direction and be disposed on the second side surface of the lower barrier member, and a bottom surface of the upper barrier member may be disposed on the second side surface of the lower barrier member and contact the connection electrode.

[0023] In an exemplary embodiment, the upper barrier member may completely overlap the lower barrier member in a plan view so that the lower barrier member is prevented from being exposed.

[0024] In an exemplary embodiment, the organic light emitting diode display device may further include: an insulating interlayer disposed between the first barrier structure and the substrate, and the insulating interlayer may include an inorganic material. The connecting electrode may be disposed between the bottom surface of the upper barrier member and the insulating interlayer, and prevent the bottom surface of the upper barrier member from contacting the insulating interlayer.

[0025] In exemplary embodiments, a plurality of grooves may be defined in the top surface of the lower barrier member.

[0026] The organic light emitting diode display device in an exemplary embodiment of the present invention includes a metal member so that the bottom surface of the upper barrier member disposed on the second side surface of the lower barrier member can directly contact the top surface of the metal member so that the upper barrier member does not directly contact the insulating interlayer. Therefore, a delamination phenomenon between the upper barrier member and the insulating interlayer can be prevented.

[0027] The organic light emitting diode display device in an exemplary embodiment of the present invention includes a connection electrode that completely overlaps with the lower barrier member in a plan view, so that the bottom surface of the upper barrier member can contact the top surface of the connection electrode and the upper barrier member may not contact the insulating interlayer. Therefore, the delamination phenomenon can be prevented from occurring. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The exemplary embodiments may be understood in more detail from the following description taken in conjunction with the accompanying drawings, in which:

[0029] Figure 1 is a plan view showing an exemplary embodiment of an organic light emitting diode display device according to the present invention;

[0030] Figure 2 is along Figure 1 A cross-sectional view taken along line II';

[0031] Figure 3 It is shown that the Figure 2 A plan view of a lower barrier member in an organic light emitting diode display device;

[0032] Figures 4 to 10 is a cross-sectional view showing an exemplary embodiment of a method of manufacturing an organic light emitting diode display device according to the present invention;

[0033] Fig.11 is a cross-sectional view showing an exemplary embodiment of an organic light emitting diode display device according to the present invention;

[0034] Fig.12is a cross-sectional view showing an exemplary embodiment of an organic light emitting diode display device according to the present invention;

[0035] Fig.13 is a cross-sectional view showing an exemplary embodiment of an organic light emitting diode display device according to the present invention;

[0036] Fig.14 is a cross-sectional view showing an exemplary embodiment of an organic light emitting diode display device according to the present invention;

[0037] Fig.15 It is shown that the Fig.13 and Fig.14 A cross-sectional view of an exemplary embodiment of a lower barrier member in an organic light emitting diode display device of FIG.

[0038] Fig.16 It is shown that the Fig.13 and Fig.14 FIG. 2 is a cross-sectional view of another exemplary embodiment of a lower barrier member in an organic light emitting diode display device. DETAILED DESCRIPTION

[0039] The present invention will now be described more fully below with reference to the accompanying drawings in which various embodiments are shown. However, the present invention can be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, these embodiments are provided so that the present invention will be thorough and comprehensive, and will fully convey the scope of the present invention to those skilled in the art. Throughout the text, the same reference numerals refer to the same elements.

[0040] It will be understood that when an element is referred to as being "on" another element, it can be directly on the other element or intervening elements may be present between the element and the other element. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements.

[0041] It will be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of this article, the first element, component, region, layer or part discussed below may be referred to as the second element, second component, second region, second layer or second part.

[0042] The terms used herein are only for the purpose of describing specific embodiments and are not intended to be limiting. As used herein, the singular forms "one" and "the" are intended to include plural forms including "at least one", unless the context clearly indicates otherwise. "Or" means "and / or". As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. It will be further understood that when used in this specification, the terms "include" and / or "comprising" specify the presence of stated features, regions, entireties, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, regions, entireties, steps, operations, elements, components and / or groups thereof.

[0043] In addition, related terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship of one element to another element as illustrated in the figure. It will be understood that, in addition to the orientation depicted in the figure, the related terms are intended to include different orientations of the device. In an exemplary embodiment, when the device in one of the figures is turned over, the element described as being on the "lower" side of the other elements will subsequently be oriented on the "upper" side of the other elements. Therefore, depending on the specific orientation of the figure, the exemplary term "lower" can include both the orientation of "lower" and "upper". Similarly, when the device in one of the figures is turned over, the element described as being "below" or "below" the other elements will subsequently be oriented "above" the other elements. Therefore, the exemplary terms "below" and "below" can include both the orientation of the above and below.

[0044] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those commonly understood by those skilled in the art to which the present invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with the context of the relevant art and their meaning in the present invention, and will not be interpreted in an idealized or overly formal sense, unless explicitly defined as such herein.

[0045] In this article, exemplary embodiments are described with reference to cross-sectional illustrations, which are schematic illustrations of idealized embodiments. In this way, variations in the shapes of the illustrations due to, for example, manufacturing techniques and / or tolerances are expected. Therefore, the embodiments described herein should not be interpreted as being limited to the specific shapes of the regions as illustrated herein, but should include deviations in shapes caused by, for example, manufacturing. In exemplary embodiments, the regions illustrated or described as flat may generally have rough and / or nonlinear features. Moreover, the illustrated sharp corners may be rounded. Therefore, the regions illustrated in the figures are schematic in nature, and their shapes are not intended to illustrate the precise shapes of the regions and are not intended to limit the scope of the claims.

[0046] Hereinafter, an organic light emitting diode display device and a method of manufacturing the organic light emitting diode display device according to the present invention will be described in detail with reference to the accompanying drawings. In the accompanying drawings, the same or similar reference numerals refer to the same or similar elements.

[0047] Figure 1 is a plan view showing an exemplary embodiment of an organic light emitting diode display device according to the present invention.

[0048] refer to Figure 1 , the organic light emitting diode display device 100 may include a display region 10 and a peripheral region 20 surrounding the display region 10. The display region 10 may include a plurality of pixel regions 30.

[0049] Pixel structure (e.g. Figure 2 A pixel structure 200 of the embodiment of the present invention may be arranged in each of the pixel regions 30. An image (e.g., a video image) may be displayed in the display region 10 through the pixel structure. Wiring (e.g., gate line, data line, power line, etc.), a first blocking structure 350, a second blocking structure 345, etc. may be arranged in the peripheral region 20. The wiring may extend in a direction from the peripheral region 20 to the display region 10 so as to be electrically connected to the pixel structure.

[0050] In an exemplary embodiment, the first barrier structure 350 may be arranged in the peripheral area 20, and the second barrier structure 345 may be spaced inwardly from the first barrier structure 350. In other words, the second barrier structure 345 may surround the display area 10, and the first barrier structure 350 may surround the second barrier structure 345 and the display area 10. For example, in an exemplary embodiment, the first barrier structure 350 and the second barrier structure 345 may not contact each other and may be parallel to each other. The barrier structure (e.g., the first barrier structure 350 and the second barrier structure 345) may prevent leakage of an organic thin film encapsulation layer included in a thin film encapsulation structure to be described below. In addition, the organic light emitting diode display device 100 includes a flexible substrate and a thin film encapsulation structure so that the organic light emitting diode display device 100 can be used as a flexible organic light emitting diode display device.

[0051] Although each of the display region 10, the peripheral region 20, and the pixel region 30 has been Figure 1 1 and 2. The display area 10, the peripheral area 20, and the pixel area 30 are shown to have a rectangular shape in a plan view, but the shapes of the display area 10, the peripheral area 20, and the pixel area 30 are not limited thereto. For example, in an exemplary embodiment, each of the display area 10, the peripheral area 20, and the pixel area 30 may have a triangular shape, a diamond shape, a polygonal shape, a circular shape, an orbital shape, or an elliptical shape in a plan view.

[0052] Figure 2 is along Figure 1 A cross-sectional view taken along line II' of Figure 3 It is shown that the Figure 2 A plan view of a lower barrier member in an organic light emitting diode display device.

[0053] refer to Figure 2 and Figure 3 , the organic light emitting diode display device 100 may include a substrate 110, a buffer layer 115, a semiconductor element 250, a first power line 380, a second power line 390, a metal member 400, a planarization layer 270, a first barrier structure 350, a second barrier structure 345, a pixel structure 200, a connection electrode 295, a pixel defining layer 310, a thin film encapsulation structure 450, and the like. In this case, the pixel structure 200 may include a lower electrode 290, a light emitting layer 330, and an upper electrode 340, and the semiconductor element 250 may include an active layer 130, a gate insulating layer 150, a gate electrode 170, an insulating interlayer 190, a source electrode 210, and a drain electrode 230. In addition, the thin film encapsulation structure 450 may include a first inorganic thin film encapsulation layer 451, an organic thin film encapsulation layer 452, and a second inorganic thin film encapsulation layer 453, and the first barrier structure 350 may include a lower barrier member 360 and an upper barrier member 370. In addition, as Figure 3 As shown in , the lower barrier member 360 may include a first side surface 361 , a second side surface 362 opposite to the first side surface 361 , and a top surface 363 disposed between the first and second side surfaces 361 and 362 , and the first side surface 361 may be adjacent to the pixel structure 200 .

[0054] As described above, the organic light emitting diode display device 100 may include a display region 10 including a pixel region 30 and a peripheral region 20 surrounding the display region 10. An image may be displayed by the pixel structure 200 in the pixel region 30, and a first blocking structure 350, a second blocking structure 345, wirings, etc. may be arranged in the peripheral region 20 which may correspond to a non-display region. A plurality of transistors (e.g., semiconductor elements 250), a plurality of capacitors, a plurality of wirings, etc. may be additionally arranged in the display region 10. The organic light emitting diode display device 100 includes a flexible substrate 110 and a thin film encapsulation structure 450 so that the organic light emitting diode display device 100 may be used as a flexible organic light emitting diode display device.

[0055] A substrate 110 including a transparent material or an opaque material may be provided. The substrate 110 may be configured as a transparent resin substrate. Examples of transparent resin substrates that may be used as the substrate 110 include polyimide substrates. For example, in an exemplary embodiment, the substrate 110 may have a configuration in which a first organic layer, a first barrier layer, a second organic layer, and a second barrier layer are sequentially stacked. The first barrier layer and the second barrier layer may include an inorganic material such as silicon oxide. In addition, the first organic layer and the second organic layer may include an organic material such as a polyimide-based resin. For example, in an exemplary embodiment, each of the first organic layer and the second organic layer may help the substrate so that the substrate may be flexible, and each of the first barrier layer and the second barrier layer may block moisture from penetrating through the first organic layer and the second organic layer.

[0056] In the method of manufacturing the organic light emitting diode display device 100, the substrate 110 is thin and flexible so that the substrate 110 can be arranged on a rigid glass to support the formation of an upper structure (e.g., a semiconductor element 250, a pixel structure 200, a thin film encapsulation structure 450, etc.). For example, in an exemplary embodiment, after the buffer layer 115 is arranged on the second barrier layer, the upper structure can be arranged on the buffer layer 115. After the upper structure is provided, the glass substrate can be removed. In other words, due to the flexible physical properties of the substrate 110, it may be difficult to form the upper structure directly on the substrate 110. From this point of view, the upper structure is provided by a rigid glass substrate, and then the glass substrate is removed so that the first organic layer, the first barrier layer, the second organic layer, and the second barrier layer can be used as the substrate 110. For example, in some exemplary embodiments, the substrate 110 may include at least one of a quartz substrate, a synthetic quartz substrate, a calcium fluoride substrate, a fluorine-doped quartz substrate (F-doped quartz substrate), a soda-lime glass substrate, a non-alkali glass substrate, and the like.

[0057] Although the substrate 110 has been described as including four layers, the configuration of the present invention is not limited thereto. For example, in other exemplary embodiments, the substrate 110 may include a single layer or multiple layers other than four layers.

[0058] The organic light emitting diode display device 100 has a display region 10 , a pixel region 30 , and a peripheral region 20 , so that the substrate 110 may also be divided into the display region 10 , the pixel region 30 , and the peripheral region 20 .

[0059] The buffer layer 115 may be disposed on the substrate 110. The buffer layer 115 may be disposed above the substrate 110. The buffer layer 115 may prevent metal atoms or impurities from diffusing from the substrate 110 into the upper structure, and may control the heat transfer rate during the crystallization process for forming the active layer 130 to obtain a substantially uniform active layer 130. In addition, when the surface of the substrate 110 is uneven, the buffer layer 115 may be used to improve the flatness of the surface of the substrate 110. Depending on the type of the substrate 110, at least two buffer layers 115 may be provided on the substrate 110, or no buffer layer 115 may be provided. The buffer layer 115 may include an organic material or an inorganic material. In an exemplary embodiment, the buffer layer 115 may include an inorganic material such as a silicon compound, a metal oxide, and the like. For example, in an exemplary embodiment, the buffer layer 115 may include silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), Silicon Oxycarbide (SiO x C y ), Silicon Carbonitride (SiC x N y ), aluminum oxide (AlO x ), aluminum nitride (AlN x ), tantalum oxide (TaO x ), hafnium oxide (HfO x )、ZrO x ), titanium oxide (TiO x ) etc.

[0060] The active layer 130 may be disposed on the buffer layer 115 in the pixel region 30. For example, the active layer 130 may include a metal oxide semiconductor, an inorganic semiconductor (eg, an amorphous silicon or polysilicon semiconductor), an organic semiconductor, etc. The active layer 130 may include a source region and a drain region.

[0061] The gate insulating layer 150 may be disposed on the buffer layer 115 and the active layer 130. For example, in an exemplary embodiment, the gate insulating layer 150 may fully cover the active layer 130 in the display area 10 on the buffer layer 115, and may include a substantially flat top surface without generating steps around the active layer 130. In an alternative exemplary embodiment, the gate insulating layer 150 may be disposed with a uniform thickness along the contour of the active layer 130 to cover the active layer 130 on the buffer layer 115. For example, the gate insulating layer 150 may include a silicon compound, a metal oxide, etc. In other exemplary embodiments, the gate insulating layer 150 may have a multilayer structure including a plurality of insulating layers. For example, in an exemplary embodiment, the insulating layers may have mutually different thicknesses or may include mutually different materials.

[0062] The gate electrode 170 may be disposed on the gate insulating layer 150 in the pixel region 30. In other words, the gate electrode 170 may be disposed on a portion of the gate insulating layer 150 under which the active layer 130 is disposed. For example, the gate electrode 170 may include a metal, a metal alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc., which may be used alone or in combination with each other. In other exemplary embodiments, the gate electrode 170 may have a multilayer structure including a plurality of metal layers. For example, in an exemplary embodiment, the metal layers may have mutually different thicknesses or may include mutually different materials.

[0063] The insulating interlayer 190 may be arranged on the gate insulating layer 150 and the gate electrode 170. In an exemplary embodiment, the insulating interlayer 190 and the upper barrier member 370 may not contact each other. The insulating interlayer 190 may fully cover the gate electrode 170 in the display area 10 on the gate insulating layer 150, and may include a substantially flat top surface without generating steps around the gate electrode 170. In an alternative exemplary embodiment, the insulating interlayer 190 may be arranged with a uniform thickness along the contour of the gate electrode 170 to cover the gate electrode 170 on the gate insulating layer 150. For example, the insulating interlayer 190 may include a silicon compound, a metal oxide, etc. In other exemplary embodiments, the insulating interlayer 190 may have a multilayer structure including a plurality of insulating layers. For example, in an exemplary embodiment, the insulating layers may have mutually different thicknesses or may include mutually different materials.

[0064] The source electrode 210 and the drain electrode 230 may be arranged on the insulating interlayer 190 in the pixel region 30. The source electrode 210 may be connected to the source region of the active layer 130 by removing the contact hole defined by the first portion of the gate insulating layer 150 and the insulating interlayer 190, and the drain electrode 230 may be connected to the drain region of the active layer 130 by removing the contact hole defined by the second portion of the gate insulating layer 150 and the insulating interlayer 190. For example, each of the source electrode 210 and the drain electrode 230 may include a metal, a metal alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc., which may be used alone or in combination with each other. In other exemplary embodiments, each of the source electrode 210 and the drain electrode 230 may have a multilayer structure including a plurality of metal layers. For example, in an exemplary embodiment, the metal layers may have mutually different thicknesses or may include mutually different materials.

[0065] Thus, a semiconductor element 250 including an active layer 130, a gate insulating layer 150, a gate electrode 170, an insulating interlayer 190, a source electrode 210, and a drain electrode 230 may be provided. For example, in an exemplary embodiment, the semiconductor element 250 may be arranged in the display region 10 on the substrate 110 while being spaced apart from the first power line 380 in the first direction D1, which is a direction from the peripheral region 20 to the display region 10.

[0066] Although the organic light emitting diode display device 100 has been described as having a configuration including one transistor (e.g., semiconductor element 250), the configuration of the present invention is not limited thereto. For example, in an exemplary embodiment, the organic light emitting diode display device 100 may have a configuration including at least two transistors and at least one capacitor.

[0067] In addition, although the semiconductor element 250 has been described as having a top gate structure, the configuration of the present invention is not limited thereto. For example, in an exemplary embodiment, the semiconductor element 250 may have a bottom gate structure and / or a dual gate structure.

[0068] The metal member 400 may be disposed on the insulating interlayer 190 in the peripheral region 20. In other words, the metal member 400 may be disposed at the outermost portion on the insulating interlayer 190 in the peripheral region 20. In an exemplary embodiment, the metal member 400 may be disposed between the first barrier structure 350 and the substrate 110 (or the insulating interlayer 190), and may directly contact the bottom surface of the upper barrier member 370 disposed on the second side surface 362 of the lower barrier member 360. For example, in an exemplary embodiment, the metal member 400 may protrude from the second side surface 362 of the lower barrier member 360 in a direction (e.g., the second direction D2) from the display region 10 to the peripheral region 20, so that the upper barrier member 370 may not directly contact the insulating interlayer 190. In other words, as Figure 1 As shown in FIG. 1 , the first barrier structure 350 has a shape surrounding the display area 10, so that the metal member 400 may also have a closed loop shape surrounding the display area 10. In some exemplary embodiments, the metal member 400 may have a shape in which the closed loop is partially opened.

[0069] For example, the metal member 400 may include a metal, a metal alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc. For example, in an exemplary embodiment, the metal member 400 may include gold (Au), silver (Ag), aluminum (Al), platinum (Pt), nickel (Ni), titanium (Ti), palladium (Pd), magnesium (Mg), calcium (Ca), lithium (Li), chromium (Cr), tantalum (Ta), tungsten (W), copper (Cu), molybdenum (Mo), scandium (Sc), neodymium (Nd), iridium (Ir), an alloy containing aluminum, aluminum nitride (AlN), or the like.x ), alloys containing silver, tungsten nitride (WN x ), alloys containing copper, alloys containing molybdenum, titanium nitride (TiN x ), chromium nitride (CrN x ), Tantalum Nitride (TaN x ), strontium ruthenium oxide (SrRu x O y ), zinc oxide (ZnO x )、Indium Tin Oxide (ITO), Tin Oxide (SnO x ), indium oxide (InO x ), gallium oxide (GaO x ), indium zinc oxide (IZO), etc. The metal member 400 may have a multilayer structure including a plurality of metal layers. In an exemplary embodiment, the metal layers may have mutually different thicknesses or may include mutually different materials.

[0070] For example, in a conventional method of manufacturing an organic light emitting diode display device, a first etchant used in a process of forming a lower electrode may include phosphoric acid, nitric acid, acetic acid, etc. When the lower electrode is etched by the first etchant, a portion of the insulating interlayer may be etched by the first etchant so that the top surface of the insulating interlayer may have a relatively high roughness (for example, the top surface of the insulating interlayer may be uneven or may have concave and convex portions). Therefore, even when the upper barrier member is disposed on the insulating interlayer located in the peripheral region after forming the lower electrode, the contact area between the top surface of the insulating interlayer and the bottom surface of the upper barrier member is relatively increased so that the upper barrier member is rarely separated from the insulating interlayer.

[0071] In the method of manufacturing the organic light emitting diode display device 100 according to the present invention, the lower electrode 290 may have a stacked structure in which ITO / Ag / ITO is stacked. In the process of etching the lower electrode 290, the lower electrode 290 may be etched by a second etchant to prevent Ag particles from reprecipitating from the lower electrode 290 due to Ag reduction. In this case, in addition to phosphoric acid, the second etchant may include nitric acid, acetic acid, etc. When the lower electrode 290 is etched by the second etchant, the insulating interlayer 190 may not be etched by the second etchant. In other words, the top surface of the insulating interlayer 190 may have a relatively low roughness (for example, the insulating interlayer 190 may have a uniform or flat top surface). Therefore, when the upper barrier member 370 is arranged on the insulating interlayer 190 arranged in the peripheral region 20 after the lower electrode 290 is arranged, the contact area between the top surface of the insulating interlayer 190 and the bottom surface of the upper barrier member 370 may be relatively reduced so that the upper barrier member 370 can be separated from the insulating interlayer 190 (for example, a delamination phenomenon). In an exemplary embodiment, the bottom surface of the upper barrier member 370 contacts the metal member 400 after the metal member 400 is arranged, so that the adhesion between the upper barrier member 370 and the metal member 400 can be relatively increased. For example, in an exemplary embodiment, the adhesion between the upper barrier member 370 including an organic material and the metal member 400 including a metal can be greater than the adhesion between the upper barrier member 370 including an organic material and the insulating interlayer 190 including an inorganic material. Therefore, the organic light emitting diode display device 100 includes the metal member 400 so that the delamination phenomenon between the upper barrier member 370 and the insulating interlayer 190 can be prevented.

[0072] The first power line 380 may be arranged on the insulating interlayer 190 in the peripheral region 20 while being spaced apart from the metal member 400 in the first direction D1. In other words, the first power line 380 may be adjacent to the boundary between the display region 10 and the peripheral region 20. In addition, the first power line 380 may be provided with a low power voltage. In this case, the low power voltage may be applied to the upper electrode 340 through the connecting electrode 295. For example, in an exemplary embodiment, the first power line 380 may include a metal, a metal alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc., which may be used alone or in combination with each other. In other exemplary embodiments, the first power line 380 may have a multilayer structure including a plurality of metal layers. For example, in an exemplary embodiment, the metal layers may have mutually different thicknesses or may include mutually different materials.

[0073] The second power line 390 may be arranged on the insulating interlayer 190 in the display area 10. In other words, the second power line 390 may be adjacent to the boundary between the display area 10 and the peripheral area 20, and may be arranged between the first power line 380 and the drain electrode 230 (or the semiconductor element 250) on the insulating interlayer 190. In addition, the second power line 390 may be provided with a high power supply voltage having a voltage level relatively higher than the low power supply voltage. In this case, the high power supply voltage may be applied to the lower electrode 290. For example, in an exemplary embodiment, the second power line 390 may include a metal, a metal alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc., which may be used alone or in combination with each other. In other exemplary embodiments, the second power line 390 may have a multilayer structure including a plurality of metal layers. For example, in an exemplary embodiment, the metal layers may have mutually different thicknesses or may include mutually different materials.

[0074] In an exemplary embodiment, the metal member 400, the first power line 380, the second power line 390, the source electrode 210, and the drain electrode 230 may be arranged in the same layer and may be provided simultaneously by the same material. In other exemplary embodiments, the organic light emitting diode display device 100 may further include a plurality of wirings arranged in the display area 10. For example, in an exemplary embodiment, the wiring may be arranged between the first power line 380 and the drain electrode 230.

[0075] The planarization layer 270 may be arranged on the insulating interlayer 190, the second power line 390, the source electrode 210, and the drain electrode 230, and the planarization layer 270 may not overlap with the first power line 380. In some exemplary embodiments, a portion of the planarization layer 270 may overlap at least a portion of the first power line 380. The planarization layer 270 may have a relatively thick thickness to fully cover the second power line 390 and the source electrode 210 and the drain electrode 230 on the insulating interlayer 190. In this case, the planarization layer 270 may have a substantially flat top surface. In order to achieve such a flat top surface of the planarization layer 270, a planarization process may be additionally performed on the planarization layer 270. In addition, a contact hole exposing the top surface of the drain electrode 230 may be defined in the planarization layer 270. The planarization layer 270 may include an organic material or an inorganic material. In an exemplary embodiment, the planarization layer 270 may include an organic material.

[0076] The lower barrier member 360 may be disposed on a portion of the metal member 400 and the insulating interlayer 190 in the peripheral region 20. In other words, the lower barrier member 360 may overlap a portion of the metal member 400 and may surround the pixel structure 200. In addition, the lower barrier member 360 may be used to block leakage of the organic thin film encapsulation layer 452, and the lower barrier member 360 may be disposed in the same layer as the planarization layer 270. The lower barrier member 360 may include an organic material or an inorganic material. For example, in an exemplary embodiment, the lower barrier member 360 may include an organic material, and the organic material may include at least one of a photoresist, a polyacrylic resin, a polyimide resin, a polyamide resin, a siloxane resin, an acrylic resin, an epoxy resin, and the like.

[0077] In an exemplary embodiment, the planarization layer 270 and the lower barrier member 360 may be provided from the same material at the same time.

[0078] The lower electrode 290 may be arranged on the planarization layer 270 in the pixel region 30. The lower electrode 290 may directly contact the drain electrode 230 through the contact hole of the planarization layer 270, and the lower electrode 290 may be electrically connected to the semiconductor element 250. For example, the lower electrode 290 may include a metal, a metal alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc., which may be used alone or in combination with each other. In other exemplary embodiments, the lower electrode 290 may have a multilayer structure including a plurality of metal layers. For example, in an exemplary embodiment, the metal layers may have mutually different thicknesses or may include mutually different materials.

[0079] The connection electrode 295 may be disposed on the planarization layer 270, the first power supply line 380, and a portion of the top surface 363 and the first side surface 361 of the lower barrier member 360. In other words, the connection electrode 295 may be spaced apart from the lower electrode 290 on the planarization layer 270 to extend in the second direction D2 (e.g., a direction from the display area 10 to the peripheral area 20) opposite to the first direction D1, and the connection electrode 295 may be disposed in the display area 10 and the peripheral area 20 adjacent to the boundary between the display area 10 and the peripheral area 20 on the substrate 110. The connection electrode 295 may be interposed between the second barrier structure 345 and the first power supply line 380 in the peripheral area 20, and a portion of the connection electrode 295 may be interposed between the lower barrier member 360 and the upper barrier member 370. In other words, the connection electrode 295 may be disposed on a portion of the top surface 363 and the first side surface 361 of the lower barrier member 360.

[0080] The connection electrode 295 may electrically connect the first power line 380 to the upper electrode 340, the connection electrode 295 may receive a low power voltage from the first power line 380, and the low power voltage may be applied to the upper electrode 340. For example, the connection electrode 295 may include a metal, a metal alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc., which may be used alone or in combination with each other. In other exemplary embodiments, the connection electrode 295 may have a multilayer structure including a plurality of metal layers. For example, in an exemplary embodiment, the metal layers may have mutually different thicknesses or may include mutually different materials.

[0081] In an exemplary embodiment, the lower electrode 290 and the connection electrode 295 may be provided from the same material at the same time.

[0082] The pixel defining layer 310 may be disposed on a portion of the lower electrode 290, a portion of the connecting electrode 295, and the planarization layer 270. The pixel defining layer 310 may cover both sides of the lower electrode 290, and an opening exposing a portion of the top surface of the lower electrode 290 may be defined in the pixel defining layer 310. The pixel defining layer 310 may include an organic material or an inorganic material. In an exemplary embodiment, the pixel defining layer 310 may include an organic material.

[0083] The upper barrier member 370 may be disposed on a portion of the connection electrode 295, the metal member 400, and the lower barrier member 360. In other words, the upper barrier member 370 may be disposed on the top surface 363 and the second side surface 362 of the lower barrier member 360, and the bottom surface of the upper barrier member 370 disposed on the second side surface 362 of the lower barrier member 360 may contact the metal member 400. The upper barrier member 370 may serve to block leakage of the organic thin film encapsulation layer 452 together with the lower barrier member 360. The upper barrier member 370 may include an organic material or an inorganic material. In an exemplary embodiment, the upper barrier member 370 may include an organic material.

[0084] The second barrier structure 345 may be disposed on the connection electrode 295 in the peripheral region 20. In other words, the second barrier structure 345 may be disposed on a portion of the connection electrode 295 under which the first power line 380 is disposed on the substrate 110 while being spaced apart from the first side surface 361 of the lower barrier member 360 in the first direction D1. Figure 1 As shown in , the second barrier structure 345 may surround the display area 10. In an exemplary embodiment, the second barrier structure 345 may be used to block leakage of the organic thin film encapsulation layer 452 together with the first barrier structure 350. The second barrier structure 345 may include an organic material or an inorganic material. In an exemplary embodiment, the second barrier structure 345 may include an organic material.

[0085] In an exemplary embodiment, the pixel defining layer 310 , the second blocking structure 345 , and the upper blocking member 370 may be provided from the same material at the same time.

[0086] Therefore, a first barrier structure 350 including a lower barrier member 360 and an upper barrier member 370 may be provided. Figure 1 As shown in , the first blocking structure 350 may be spaced apart from the second blocking structure 345 in the second direction D2, and the first blocking structure 350 may surround the second blocking structure 345.

[0087] For example, in a conventional method of manufacturing an organic light emitting diode display device, depending on the manufacturing process margin, the upper barrier member may be arranged only on the top surface of the lower barrier member, may be arranged on the top surface and the first side surface of the lower barrier member, may be arranged on the top surface and the second side surface of the lower barrier member, or may be formed on the top surface and the first side surface and the second side surface of the lower barrier member. In this case, when the upper barrier member is formed only on the top surface of the lower barrier member, the upper barrier member may not contact the insulating interlayer. In addition, when the upper barrier member is arranged on the top surface and the first side surface of the lower barrier member, the upper barrier member may not contact the insulating interlayer. In this case, delamination may not occur. However, when the upper barrier member is formed on the top surface and the second side surface of the lower barrier member, the bottom surface of the upper barrier member located on the second side surface may contact the insulating interlayer. In addition, when the upper barrier member is formed on the top surface and the first and second side surfaces of the lower barrier member, the bottom surface of the upper barrier member on the second side surface may contact the insulating interlayer (for example, since the bottom surface of the upper barrier member on the first side surface of the lower barrier member is formed on the connection electrode, delamination may not occur). In this case, delamination may occur.

[0088] The organic light emitting diode display device 100 in an exemplary embodiment of the present invention includes a metal member 400 disposed under an upper barrier member 370, and the upper barrier member 370 is disposed on the second side surface 362 of the lower barrier member 360 so that the upper barrier member 370 may not contact the insulating interlayer 190 and a delamination phenomenon may be prevented from occurring between the upper barrier member 370 and the insulating interlayer 190.

[0089] The light emitting layer 330 may be arranged on the lower electrode 290 exposed by the opening of the pixel defining layer 310. The light emitting layer 330 may be provided by at least one of the light emitting materials for emitting light of different colors (i.e., red light, green light, blue light, etc.) according to the sub-pixel. In an alternative exemplary embodiment, the light emitting layer 330 may be provided by stacking a plurality of light emitting materials for emitting light of different colors such as red light, green light, and blue light to emit white light as a whole. In this case, a color filter may be arranged on the light emitting layer 330 (e.g., to overlap with the light emitting layer 330 on the top surface of the thin film encapsulation structure 450). For example, in an exemplary embodiment, the color filter may include at least one of a red color filter, a green color filter, and a blue color filter, but is not limited thereto. For example, in some exemplary embodiments, the color filter may include a yellow color filter, a cyan color filter, and a magenta color filter. The color filter may include a photosensitive resin or a color photoresist.

[0090] The upper electrode 340 may be arranged on the pixel defining layer 310 and the light emitting layer 330. The upper electrode 340 may be arranged on the substrate 110 above the display region 10 to cover the light emitting layer 330 and the pixel defining layer 310. The upper electrode 340 may be electrically connected to the connection electrode 295 adjacent to the boundary of the display region 10 and the peripheral region 20 in the display region 10. The upper electrode 340 may include a metal, a metal alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc. that may be used alone or in combination with each other. In other exemplary embodiments, the upper electrode 340 may have a multilayer structure including a plurality of metal layers. For example, in an exemplary embodiment, the metal layers may have mutually different thicknesses or may include mutually different materials.

[0091] Thus, the pixel structure 200 including the lower electrode 290 , the light emitting layer 330 , and the upper electrode 340 may be provided.

[0092] The first inorganic thin film encapsulation layer 451 may be arranged on the upper electrode 340, the connecting electrode 295, the first barrier structure 350, the second barrier structure 345, the insulating interlayer 190, etc. The first inorganic thin film encapsulation layer 451 may be arranged with a uniform thickness along the contours of the upper electrode 340, the connecting electrode 295, the first barrier structure 350, and the second barrier structure 345 to cover the upper electrode 340, the connecting electrode 295, the first barrier structure 350, and the second barrier structure 345. The first inorganic thin film encapsulation layer 451 may prevent the pixel structure 200 from being degraded due to the penetration of moisture, oxygen, etc. In addition, the first inorganic thin film encapsulation layer 451 may be used to protect the pixel structure 200 from external impact. The first inorganic thin film encapsulation layer 451 may include an inorganic material having flexibility.

[0093] The organic thin film encapsulation layer 452 may be disposed on the first inorganic thin film encapsulation layer 451. The organic thin film encapsulation layer 452 may improve the flatness of the organic light emitting diode display device 100 and protect the pixel structure 200 together with the first inorganic thin film encapsulation layer 451. The organic thin film encapsulation layer 452 may include an organic material having flexibility.

[0094] The second inorganic thin film encapsulation layer 453 may be disposed on the organic thin film encapsulation layer 452. The second inorganic thin film encapsulation layer 453 may be disposed with a uniform thickness along the contours of the first inorganic thin film encapsulation layer 451 and the organic thin film encapsulation layer 452 to cover the organic thin film encapsulation layer 452. The second inorganic thin film encapsulation layer 453 may prevent the pixel structure 200 from being degraded due to the penetration of moisture, oxygen, etc. together with the first inorganic thin film encapsulation layer 451. In addition, the second inorganic thin film encapsulation layer 453 may be used to protect the pixel structure 200 from external impacts together with the first inorganic thin film encapsulation layer 451 and the organic thin film encapsulation layer 452. The second inorganic thin film encapsulation layer 453 may include an inorganic material having flexibility.

[0095] Thus, a thin film encapsulation structure 450 including a first inorganic thin film encapsulation layer 451 , an organic thin film encapsulation layer 452 , and a second inorganic thin film encapsulation layer 453 may be provided.

[0096] In other exemplary embodiments, the thin film encapsulation structure 450 may have a five-layer structure provided by stacking three inorganic thin film encapsulation layers and two organic thin film encapsulation layers or a seven-layer structure provided by stacking four inorganic thin film encapsulation layers and three organic thin film encapsulation layers.

[0097] The organic light emitting diode display device 100 in the exemplary embodiment of the present invention includes the metal member 400 so that the bottom surface of the upper barrier member 370 disposed on the second side surface 362 of the lower barrier member 360 can directly contact the top surface of the metal member 400, so that the upper barrier member 370 does not directly contact the insulating interlayer 190. Therefore, the delamination phenomenon between the upper barrier member 370 and the insulating interlayer 190 can be prevented.

[0098] Figures 4 to 10 are cross-sectional views showing an exemplary embodiment of a method of manufacturing an organic light emitting diode display device according to the present invention. These cross-sectional views are perpendicular to the third direction D3.

[0099] refer to Figure 4, a glass substrate 105 that is rigid may be provided. A substrate 110 including a transparent material or an opaque material may be arranged on the glass substrate 105. The substrate 110 may be configured as a transparent resin substrate having flexibility. For example, in an exemplary embodiment, the substrate 110 may have a configuration in which a first organic layer, a first barrier layer, a second organic layer, and a second barrier layer are stacked in sequence. The first barrier layer and the second barrier layer may be provided by an inorganic material such as silicon oxide, and the first organic layer and the second organic layer may be provided by an organic material such as a polyimide-based resin. The substrate 110 may be divided into a display area 10, a pixel area 30, and a peripheral area 20.

[0100] For example, in some exemplary embodiments, the substrate 110 may be provided by at least one of a quartz substrate, a synthetic quartz substrate, a calcium fluoride substrate, a F-doped quartz substrate, a soda-lime glass substrate, a non-alkali glass substrate, and the like.

[0101] The buffer layer 115 may be disposed on the substrate 110. The buffer layer 115 may be disposed on the substrate 110. Depending on the type of the substrate 110, at least two buffer layers 115 may be provided on the substrate 110, or no buffer layer 115 may be provided. The buffer layer 115 may be provided by an inorganic material such as a silicon compound, a metal oxide, etc. For example, in an exemplary embodiment, the buffer layer 115 may include SiO x 、SiN x 、SiO x N y 、SiO x C y 、SiC x N y 、AlO x 、AlN x 、TaO x , HfO x 、ZrO x 、TiO x At least one of the above.

[0102] The active layer 130 may be disposed on the buffer layer 115 in the pixel region 30. For example, the active layer 130 may be provided by at least one of a metal oxide semiconductor, an inorganic semiconductor, an organic semiconductor, etc. The active layer 130 may include a source region and a drain region.

[0103] The gate insulating layer 150 may be disposed on the buffer layer 115 and the active layer 130. For example, in an exemplary embodiment, the gate insulating layer 150 may fully cover the active layer 130 in the display area 10 on the buffer layer 115, and may include a substantially flat top surface without generating steps around the active layer 130. In an alternative exemplary embodiment, the gate insulating layer 150 may be disposed with a uniform thickness along the contour of the active layer 130 to cover the active layer 130 on the buffer layer 115. For example, the gate insulating layer 150 may be provided by at least one of a silicon compound, a metal oxide, and the like.

[0104] The gate electrode 170 may be disposed on the gate insulating layer 150 in the pixel region 30. In other words, the gate electrode 170 may be disposed on a portion of the gate insulating layer 150 under which the active layer 130 is disposed. For example, the gate electrode 170 may be provided by a metal, a metal alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc., which may be used alone or in combination with each other.

[0105] The insulating interlayer 190 may be disposed on the gate insulating layer 150 and the gate electrode 170. The insulating interlayer 190 may sufficiently cover the gate electrode 170 in the display region 10 on the gate insulating layer 150, and may include a substantially flat top surface without generating a step around the gate electrode 170. In an alternative exemplary embodiment, the insulating interlayer 190 may be disposed with a uniform thickness along the contour of the gate electrode 170 to cover the gate electrode 170 on the gate insulating layer 150. For example, the insulating interlayer 190 may be provided by at least one of a silicon compound, a metal oxide, and the like.

[0106] refer to Figure 5 , the source electrode 210 and the drain electrode 230 may be disposed on the insulating interlayer 190 in the pixel region 30. The source electrode 210 may be connected to the source region of the active layer 130 by removing a contact hole defined by a first portion of the gate insulating layer 150 and the insulating interlayer 190, and the drain electrode 230 may be connected to the drain region of the active layer 130 by removing a contact hole defined by a second portion of the gate insulating layer 150 and the insulating interlayer 190. For example, each of the source electrode 210 and the drain electrode 230 may be provided by a metal, a metal alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc., which may be used alone or in combination with each other.

[0107] Thus, the semiconductor element 250 including the active layer 130 , the gate insulating layer 150 , the gate electrode 170 , the insulating interlayer 190 , the source electrode 210 , and the drain electrode 230 may be provided.

[0108] The metal member 400 may be disposed on the insulating interlayer 190 in the peripheral region 20. In other words, the metal member 400 may be disposed on the insulating interlayer 190 at the outermost portion in the peripheral region 20. For example, the metal member 400 may be provided by at least one of a metal, a metal alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like. For example, in an exemplary embodiment, the metal member 400 may include Au, Ag, Al, Pt, Ni, Ti, Pd, Mg, Ca, Li, Cr, Ta, W, Cu, Mo, Sc, Nd, Ir, an alloy containing aluminum, AlN, or the like. x 、Alloys containing silver、WN x , alloys containing copper, alloys containing molybdenum, TiN x CrN x 、TaN x 、SrRu x O y 、ZnO x 、ITO、SnO x 、InO x 、GaO x , IZO, etc.

[0109] The first power line 380 may be disposed on the insulating interlayer 190 in the peripheral region 20 while being spaced apart from the metal member 400 in the first direction D1. For example, in an exemplary embodiment, the first power line 380 may be provided by a metal, a metal alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc., which may be used alone or in combination with each other.

[0110] The second power line 390 may be disposed on the insulating interlayer 190 in the display region 10. The second power line 390 may be disposed between the first power line 380 and the drain electrode 230 (or the semiconductor element 250) on the insulating interlayer 190. For example, the second power line 390 may be provided by a metal, a metal alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc., which may be used alone or in combination with each other.

[0111] In an exemplary embodiment, the metal member 400, the first power line 380, the second power line 390, the source electrode 210, and the drain electrode 230 may be arranged in the same layer at the same time by the same material. For example, in an exemplary embodiment, the metal member 400, the first power line 380, the second power line 390, the source electrode 210, and the drain electrode 230 may be provided at the same time by forming a preliminary electrode layer on the insulating interlayer 190 and selectively etching the preliminary electrode layer.

[0112] refer to Figure 6, the planarization layer 270 may be arranged on the insulating interlayer 190, the second power line 390, the source electrode 210, and the drain electrode 230. The planarization layer 270 may have a relatively thick thickness to fully cover the second power line 390 and the source electrode 210 and the drain electrode 230 on the insulating interlayer 190. In this case, the planarization layer 270 may have a substantially flat top surface. In order to achieve such a flat top surface of the planarization layer 270, a planarization process may be additionally performed on the planarization layer 270. The planarization layer 270 may be provided by an organic material.

[0113] The lower barrier member 360 may be disposed on a portion of the metal member 400 and the insulating interlayer 190 in the peripheral region 20. In other words, the lower barrier member 360 may overlap a portion of the metal member 400. The lower barrier member 360 may include a first side surface 361, a second side surface 362, and a top surface 363 (refer to Figure 3 The lower barrier member 360 may be provided by an organic material. For example, in an exemplary embodiment, the organic material may include at least one of photoresist, polyacrylic resin, polyimide resin, polyamide resin, siloxane resin, acrylic resin, epoxy resin, etc.

[0114] In an exemplary embodiment, the planarization layer 270 and the lower barrier member 360 may be simultaneously disposed in the same layer from the same material. For example, in an exemplary embodiment, the planarization layer 270 and the lower barrier member 360 may be simultaneously disposed on the insulating interlayer 190 by forming an organic layer over the insulating interlayer 190 and partially removing the organic layer through a slit mask, a half-tone mask, a half-tone slit mask, etc.

[0115] refer to Figure 7 , the lower electrode 290 may be disposed on the planarization layer 270 in the pixel region 30. The lower electrode 290 may directly contact the drain electrode 230 through a contact hole defined by removing a portion of the planarization layer 270. For example, the lower electrode 290 may be provided by a metal, a metal alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc., which may be used alone or in combination with each other.

[0116] The connection electrode 295 may be disposed on a portion of the top surface 363 of the lower barrier member 360, the planarization layer 270, and the first power supply line 380. In other words, the connection electrode 295 may be spaced apart from the lower electrode 290 on the planarization layer 270 to extend in the second direction D2, and the connection electrode 295 may be disposed in the display region 10 and the peripheral region 20 adjacent to the boundary between the display region 10 and the peripheral region 20 on the substrate 110. The connection electrode 295 may be disposed on a portion of the top surface 363 of the lower barrier member 360 and the first side surface 361 in the peripheral region 20. For example, the connection electrode 295 may be provided by a metal, a metal alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc., which may be used alone or in combination with each other.

[0117] In an exemplary embodiment, the lower electrode 290 and the connecting electrode 295 may be provided simultaneously from the same material. For example, in an exemplary embodiment, the lower electrode 290 and the connecting electrode 295 may be provided simultaneously by forming a preliminary electrode layer over the insulating interlayer 190, the lower barrier member 360, and the planarization layer 270 and partially etching the preliminary electrode layer.

[0118] refer to Figure 8 , a pixel defining layer 310 may be disposed on a portion of the lower electrode 290, a portion of the connection electrode 295, and the planarization layer 270. The pixel defining layer 310 may cover both sides of the lower electrode 290, and an opening exposing a portion of the top surface of the lower electrode 290 may be defined in the pixel defining layer 310. The pixel defining layer 310 may be provided by an organic material.

[0119] The upper barrier member 370 may be disposed on a portion of the connection electrode 295, the metal member 400, and the lower barrier member 360. In other words, the upper barrier member 370 may be disposed on the top surface 363 and the second side surface 362 of the lower barrier member 360, and the bottom surface of the upper barrier member 370 disposed on the second side surface 362 of the lower barrier member 360 may contact the metal member 400. The upper barrier member 370 may be provided by an organic material.

[0120] The second barrier structure 345 may be disposed on the connection electrode 295 in the peripheral region 20. In other words, the second barrier structure 345 may be disposed on a portion of the connection electrode 295 under which the first power line 380 is disposed on the substrate 110 while being spaced apart from the first side surface 361 of the lower barrier member 360 in the first direction D1. The second barrier structure 345 may be provided by an organic material.

[0121] In an exemplary embodiment, the pixel defining layer 310, the second blocking structure 345, and the upper blocking member 370 may be provided from the same material at the same time. For example, in an exemplary embodiment, the upper blocking member 370, the second blocking structure 345, and the pixel defining layer 310 may be simultaneously disposed on the substrate 110 by forming an organic layer over the substrate 110 and partially removing the organic layer through a slit mask, a half-tone mask, a half-tone slit mask, etc. In this case, the height of the top surface of the upper blocking member 370 may be higher than the height of each of the top surfaces of the second blocking structure 345 and the top surface of the pixel defining layer 310.

[0122] Therefore, a first barrier structure 350 including a lower barrier member 360 and an upper barrier member 370 may be provided.

[0123] refer to Fig. 9 , the light emitting layer 330 may be arranged on the lower electrode 290 exposed by the opening of the pixel defining layer 310. The light emitting layer 330 may be provided by at least one of the light emitting materials for emitting light of different colors (i.e., red light, green light, blue light, etc.) according to the sub-pixel. In an alternative exemplary embodiment, the light emitting layer 330 may be provided by stacking a plurality of light emitting materials for emitting light of different colors such as red light, green light, and blue light to emit white light as a whole. In this case, a color filter may be arranged on the light emitting layer 330. For example, in an exemplary embodiment, the color filter may be provided by at least one of a red color filter, a green color filter, and a blue color filter, but is not limited thereto. The color filter may be provided by a photosensitive resin or a color photoresist.

[0124] The upper electrode 340 may be disposed on the pixel defining layer 310 and the light emitting layer 330. The upper electrode 340 may be disposed above the display region 10 on the substrate 110 to cover the light emitting layer 330 and the pixel defining layer 310. For example, the upper electrode 340 may be provided by a metal, a metal alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc., which may be used alone or in combination with each other.

[0125] Thus, the pixel structure 200 including the lower electrode 290 , the light emitting layer 330 , and the upper electrode 340 may be provided.

[0126] The first inorganic thin film encapsulation layer 451 may be disposed on the upper electrode 340, the connection electrode 295, the first barrier structure 350, the second barrier structure 345, the insulating interlayer 190, etc. The first inorganic thin film encapsulation layer 451 may be disposed with a uniform thickness along the contours of the upper electrode 340, the connection electrode 295, the first barrier structure 350, and the second barrier structure 345 to cover the upper electrode 340, the connection electrode 295, the first barrier structure 350, and the second barrier structure 345. The first inorganic thin film encapsulation layer 451 may be provided by an inorganic material having flexibility.

[0127] refer to Fig.10 and Figure 2 , the organic thin film encapsulation layer 452 may be disposed on the first inorganic thin film encapsulation layer 451. The organic thin film encapsulation layer 452 may be provided by an organic material having flexibility.

[0128] The second inorganic thin film encapsulation layer 453 may be disposed on the organic thin film encapsulation layer 452. The second inorganic thin film encapsulation layer 453 may be disposed with a uniform thickness along the contours of the first inorganic thin film encapsulation layer 451 and the organic thin film encapsulation layer 452 to cover the organic thin film encapsulation layer 452. The second inorganic thin film encapsulation layer 453 may be provided by an inorganic material having flexibility.

[0129] Thus, a thin film encapsulation structure 450 including a first inorganic thin film encapsulation layer 451 , an organic thin film encapsulation layer 452 , and a second inorganic thin film encapsulation layer 453 may be provided.

[0130] After the thin film encapsulation structure 450 is disposed, the glass substrate 105 can be peeled off from the substrate 110. Thus, it is possible to manufacture Figure 2 The organic light emitting diode display device 100 shown in FIG.

[0131] Fig.11 3 is a cross-sectional view showing an exemplary embodiment of an organic light emitting diode display device according to the present invention. In addition to the shape of the upper barrier member 370, Fig.11 The organic light emitting diode display device 500 shown in FIG. Figures 1 to 3 The configuration of the organic light emitting diode display device 100 described above is substantially the same or similar to the configuration. Fig.11 In, with reference Figures 1 to 3 Redundant descriptions of components that are described as being substantially the same or similar will be omitted.

[0132] refer to Fig.11 , the organic light emitting diode display device 500 may include a substrate 110, a buffer layer 115, a semiconductor element 250, a first power line 380, a second power line 390, a metal member 400, a planarization layer 270, a first barrier structure 350, a second barrier structure 345, a pixel structure 200, a connection electrode 295, a pixel defining layer 310, a thin film encapsulation structure 450, etc. In this case, the first barrier structure 350 may include a lower barrier member 360 and an upper barrier member 370. In addition, as Figure 3 As shown in , the lower barrier member 360 may include a first side surface 361 , a second side surface 362 opposite to the first side surface 361 , and a top surface 363 disposed between the first and second side surfaces 361 and 362 , and the first side surface 361 may be adjacent to the pixel structure 200 .

[0133] The upper barrier member 370 may be disposed on the metal member 400, the lower barrier member 360, and the connection electrode 295. The upper barrier member 370 may completely overlap the lower barrier member 360 in a plan view, so that the lower barrier member 360 may be prevented from being exposed. In other words, the upper barrier member 370 may be disposed on the top surface 363, the first side surface 361, and the second side surface 362 of the lower barrier member 360. For example, in an exemplary embodiment, a first bottom surface of the upper barrier member 370 disposed on the first side surface 361 of the lower barrier member 360 may contact the connection electrode 295, and a second bottom surface of the upper barrier member 370 disposed on the second side surface 362 of the lower barrier member 360 may contact the metal member 400.

[0134] In an exemplary embodiment, the first and second bottom surfaces of the upper barrier member 370 contact metal (eg, the metal member 400 and the connection electrode 295 ) but not the inorganic insulating layer (eg, the insulating interlayer 190 ) so that separation from the lower barrier member 360 may be prevented.

[0135] Fig.12 2 is a cross-sectional view showing an exemplary embodiment of an organic light emitting diode display device according to the present invention. In addition to the shape of the connection electrode 295, Fig.12 The organic light emitting diode display device 600 shown in FIG. Fig.11 The configuration of the organic light emitting diode display device 500 described above is substantially the same or similar to the configuration. Fig.12 In, with reference Fig.11 Redundant descriptions of components that are described as being substantially the same or similar will be omitted.

[0136] refer to Fig.12 , the organic light emitting diode display device 600 may include a substrate 110, a buffer layer 115, a semiconductor element 250, a first power line 380, a second power line 390, a metal member 400, a planarization layer 270, a first barrier structure 350, a second barrier structure 345, a pixel structure 200, a connection electrode 295, a pixel defining layer 310, a thin film encapsulation structure 450, etc. In this case, the first barrier structure 350 may include a lower barrier member 360 and an upper barrier member 370. In addition, as Figure 3 As shown in , the lower barrier member 360 may include a first side surface 361 , a second side surface 362 opposite to the first side surface 361 , and a top surface 363 disposed between the first and second side surfaces 361 and 362 , and the first side surface 361 may be adjacent to the pixel structure 200 .

[0137] The connection electrode 295 may be disposed on the planarization layer 270, the first power line 380, and the top surface 363, the first side surface 361, and the second side surface 362 of the lower barrier member 360. In other words, the connection electrode 295 may be spaced apart from the lower electrode 290 on the planarization layer 270 to extend in the second direction D2 opposite to the first direction D1, and the connection electrode 295 may be disposed in the display region 10 and the peripheral region 20 adjacent to the boundary between the display region 10 and the peripheral region 20 on the substrate 110. The connection electrode 295 may be inserted between the second barrier structure 345 and the first power line 380 in the peripheral region 20, and may extend in the second direction D2 so that the connection electrode 295 may be inserted between the lower barrier member 360 and the upper barrier member 370. In other words, the connection electrode 295 may be disposed on the first side surface 361, the second side surface 362, and the top surface 363 of the lower barrier member 360. In an exemplary embodiment, the connection electrode 295 may contact the metal member 400. In other words, the connection electrode 295 may completely overlap the lower barrier member 360 in a plan view, so that the lower barrier member 360 may be prevented from being exposed.

[0138] In an exemplary embodiment, the connection electrode 295 is disposed on substantially the entire portion of the bottom surface of the upper barrier member 370 so that the adhesion between the upper barrier member 370 and the connection electrode 295 can be relatively increased. In addition, the connection electrode 295 contacts the metal member 400 so that the wiring resistance of the connection electrode 295 can be relatively reduced.

[0139] Fig.13 is a cross-sectional view showing an exemplary embodiment of an organic light emitting diode display device according to the present invention.

[0140] refer to Fig.13 , the organic light emitting diode display device 700 may include a substrate 110, a buffer layer 115, a semiconductor element 250, a first power line 380, a second power line 390, a planarization layer 270, a first blocking structure 350, a second blocking structure 345, a pixel structure 200, a connection electrode 295, a pixel defining layer 310, a thin film encapsulation structure 450, and the like. In this case, the pixel structure 200 may include a lower electrode 290, a light emitting layer 330, and an upper electrode 340, and the semiconductor element 250 may include an active layer 130, a gate insulating layer 150, a gate electrode 170, an insulating interlayer 190, a source electrode 210, and a drain electrode 230. In addition, the thin film encapsulation structure 450 may include a first inorganic thin film encapsulation layer 451, an organic thin film encapsulation layer 452, and a second inorganic thin film encapsulation layer 453, and the first blocking structure 350 may include a lower blocking member 360 and an upper blocking member 370. In addition, as Figure 3As shown in , the lower barrier member 360 may include a first side surface 361 , a second side surface 362 opposite to the first side surface 361 , and a top surface 363 disposed between the first and second side surfaces 361 and 362 , and the first side surface 361 may be adjacent to the pixel structure 200 .

[0141] The organic light emitting diode display device 700 may include a display region 10 including a pixel region 30 and a peripheral region 20 surrounding the display region 10. An image may be displayed by the pixel structure 200 in the pixel region 30, and a first blocking structure 350, a second blocking structure 345, wirings, etc. may be arranged in the peripheral region 20 which may correspond to a non-display region. A plurality of transistors (e.g., semiconductor elements 250), a plurality of capacitors, a plurality of wirings, etc. may be additionally arranged in the display region 10. The organic light emitting diode display device 700 includes a flexible substrate 110 and a thin film encapsulation structure 450 so that the organic light emitting diode display device 700 may be used as a flexible organic light emitting diode display device.

[0142] The connection electrode 295 may be disposed on the planarization layer 270, the first power line 380, and the lower barrier member 360. In other words, the connection electrode 295 may be spaced apart from the lower electrode 290 on the planarization layer 270 to extend in the second direction D2, and the connection electrode 295 may be disposed in the display region 10 and the peripheral region 20 adjacent to the boundary between the display region 10 and the peripheral region 20 on the substrate 110. The connection electrode 295 may be inserted between the second barrier structure 345 and the first power line 380 in the peripheral region 20, and may extend in the second direction D2 so that the connection electrode 295 may be inserted between the lower barrier member 360 and the upper barrier member 370. In other words, the connection electrode 295 may be disposed on the first side surface 361, the second side surface 362, and the top surface 363 of the lower barrier member 360. In an exemplary embodiment, the connection electrode 295 may completely overlap with the lower barrier member 360 in a plan view, so that the lower barrier member 360 may be prevented from being exposed.

[0143] The upper barrier member 370 may be disposed on a portion of the connection electrode 295 and the lower barrier member 360. In other words, the upper barrier member 370 may extend in the first direction D1 on the top surface 363 of the lower barrier member 360 so as to be disposed on the first side surface 361 of the lower barrier member 360, and the bottom surface of the upper barrier member 370 disposed on the first side surface 361 of the lower barrier member 360 may contact the connection electrode 295. The upper barrier member 370 may serve to block leakage of the organic thin film encapsulation layer 452 together with the lower barrier member 360. The upper barrier member 370 may include an organic material or an inorganic material. In an exemplary embodiment, the upper barrier member 370 may include an organic material.

[0144] The organic light emitting diode display device 700 in the exemplary embodiment of the present invention includes the connection electrode 295 completely overlapping the lower barrier member 360 in a plan view, so that the bottom surface of the upper barrier member 370 may contact the top surface of the connection electrode 295 and the upper barrier member 370 may not contact the insulating interlayer 190. Therefore, the delamination phenomenon may be prevented from occurring.

[0145] Fig.14 3 is a cross-sectional view showing an exemplary embodiment of an organic light emitting diode display device according to the present invention. In addition to the shape of the upper barrier member 370, Fig.14 The organic light emitting diode display device 800 shown in FIG. Fig.13 The configuration of the organic light emitting diode display device 700 described above is substantially the same as or similar to the configuration. Fig.14 In, with reference Fig.13 Redundant descriptions of components that are described as being substantially the same or similar will be omitted.

[0146] refer to Fig.14 , the organic light emitting diode display device 800 may include a substrate 110, a buffer layer 115, a semiconductor element 250, a first power line 380, a second power line 390, a planarization layer 270, a first blocking structure 350, a second blocking structure 345, a pixel structure 200, a connection electrode 295, a pixel defining layer 310, a thin film encapsulation structure 450, etc. In this case, the first blocking structure 350 may include a lower blocking member 360 and an upper blocking member 370. In addition, as Figure 3 As shown in , the lower barrier member 360 may include a first side surface 361 , a second side surface 362 opposite to the first side surface 361 , and a top surface 363 disposed between the first and second side surfaces 361 and 362 , and the first side surface 361 may be adjacent to the pixel structure 200 .

[0147] The upper barrier member 370 may be disposed on the connection electrode 295. The upper barrier member 370 may completely overlap the lower barrier member 360 in a plan view, so that the lower barrier member 360 may be prevented from being exposed. In other words, the upper barrier member 370 may extend in the first direction D1 on the top surface 363 of the lower barrier member 360 so as to be disposed on the first side surface 361 of the lower barrier member 360, and may extend in the second direction D2 on the top surface 363 of the lower barrier member 360 so as to be disposed on the second side surface 362 of the lower barrier member 360. That is, the upper barrier member 370 may be disposed on the top surface 363, the first side surface 361, and the second side surface 362 of the lower barrier member 360. For example, in an exemplary embodiment, a first bottom surface of the upper barrier member 370 disposed on the first side surface 361 of the lower barrier member 360 and a second bottom surface of the upper barrier member 370 disposed on the second side surface 362 of the lower barrier member 360 may contact the connection electrode 295.

[0148] In an exemplary embodiment, the first and second bottom surfaces of the upper barrier member 370 contact metal (eg, the metal member 400 and the connection electrode 295 ) but not the inorganic insulating layer (eg, the insulating interlayer 190 ) so that separation from the lower barrier member 360 may be prevented.

[0149] Fig.15 It is shown that the Fig.13 and Fig.14 A cross-sectional view of an exemplary embodiment of a lower barrier member in an organic light emitting diode display device of FIG. Fig.16 It is shown that the Fig.13 and Fig.14 FIG. 2 is a cross-sectional view of another exemplary embodiment of a lower barrier member in an organic light emitting diode display device.

[0150] refer to Fig.13 , Fig.14 , Fig.15 and Fig.16 as well as Figure 3 In the process of manufacturing the lower barrier member 360, the top surface 363 of the lower barrier member 360 may be provided to be uneven by a half-tone slit mask. In an exemplary embodiment, as shown in FIG. Fig.15 As shown in , a plurality of grooves 441 may be defined in the top surface 363 of the lower barrier member 360. In an alternative exemplary embodiment, as shown in FIG. Fig.16As shown in , the concavo-convex portion 442 may be defined on the top surface 363 of the lower barrier member 360. In this case, the connection electrode 295 disposed on the lower barrier member 360 may be arranged along the contour of the top surface 363 of the lower barrier member 360 so that the groove 441 or the concavo-convex portion 442 may be defined in the connection electrode 295 overlapping the top surface 363 of the lower barrier member 360. When the upper barrier member 370 is disposed on the groove 441 or the concavo-convex portion 442 of the connection electrode 295, the contact area between the connection electrode 295 and the upper barrier member 370 may be relatively increased. Therefore, the upper barrier member 370 may be prevented from being separated from the connection electrode 295.

[0151] The present invention can be applied to various electronic devices including organic light emitting diode display devices. For example, in an exemplary embodiment, the present invention can be applied to a vehicle display device, a ship display device, an aircraft display device, a portable communication device, a display device for display or for information transmission, a medical display device, etc.

[0152] The foregoing describes exemplary embodiments and should not be construed as limiting the exemplary embodiments. Although some exemplary embodiments have been described, it will be readily appreciated by those skilled in the art that many modifications are possible in the exemplary embodiments without departing substantially from the novel teachings and advantages of the present invention. Therefore, all such modifications are intended to be included within the scope of the present invention as defined in the claims. Therefore, it is to be understood that the foregoing describes various exemplary embodiments and should not be construed as being limited to the specific exemplary embodiments disclosed, and modifications to the disclosed exemplary embodiments as well as other exemplary embodiments are intended to be included within the scope of the appended claims.

Claims

1. An organic light emitting diode display device, include: A substrate including a display area and a peripheral area; a pixel structure arranged on the substrate in the display area; a lower barrier member disposed on the substrate in the peripheral region and surrounding the pixel structure, the lower barrier member including a first side surface adjacent to the pixel structure, a second side surface opposite to the first side surface, and a top surface disposed between the first side surface and the second side surface; an upper barrier member disposed on the top surface and the second side surface of the lower barrier member, the upper barrier member and the lower barrier member forming a first barrier structure; as well as A metal member is disposed between the first barrier structure and the substrate and contacts a bottom surface of the upper barrier member disposed on the second side surface of the lower barrier member.

2. The organic light emitting diode display device according to claim 1, further comprising: include: an insulating interlayer disposed between the first barrier structure and the substrate, the insulating interlayer comprising an inorganic material, wherein the metal member is disposed between the bottom surface of the upper barrier member and the insulating interlayer, and prevents the bottom surface of the upper barrier member from contacting the insulating interlayer.

3. The organic light emitting diode display device according to claim 1, further comprising: include: a second barrier structure disposed in the peripheral region on the substrate while being spaced apart from the first side surface of the lower barrier member in a first direction, the first direction being a direction from the peripheral region to the display region.

4. The organic light emitting diode display device according to claim 3, further comprising: include: A first power supply line is disposed between the second blocking structure and the substrate.

5. The organic light emitting diode display device according to claim 4, further comprising: include: A connection electrode is disposed between the second barrier structure and the first power line, the connection electrode extending in a second direction opposite to the first direction and disposed on at least a portion of the top surface of the lower barrier member and the first side surface.

6. The organic light emitting diode display device according to claim 5, in, The upper barrier member extends in the first direction and is arranged on the first side surface of the lower barrier member, and The bottom surface of the upper barrier member is further disposed on the first side surface of the lower barrier member and contacts the connection electrode, and The upper barrier member completely overlaps with the lower barrier member in a plan view, so that the lower barrier member is prevented from being exposed.

7. The organic light emitting diode display device according to claim 5, in, The connection electrode is disposed on the second side surface of the lower barrier member, and The connecting electrode contacts the metal member, and The connection electrode completely overlaps the lower barrier member in a plan view, so that the lower barrier member is prevented from being exposed.

8. The organic light emitting diode display device according to claim 5, further comprising: include: a semiconductor element arranged in the display region on the substrate while being spaced apart from the first power line in the first direction; as well as A second power supply line is arranged on the substrate between the first power supply line and the semiconductor element.

9. The organic light emitting diode display device according to claim 8, in, The pixel structure comprises: a lower electrode disposed on the semiconductor element; a light emitting layer disposed on the lower electrode; and an upper electrode disposed on the light emitting layer, and The connection electrode extends in the first direction to contact the upper electrode.

10. The organic light emitting diode display device according to claim 9, further comprising: include: a first inorganic thin film encapsulation layer disposed on the upper electrode, the first barrier structure, and the second barrier structure; an organic thin film encapsulation layer disposed on the first inorganic thin film encapsulation layer; as well as A second inorganic thin film encapsulation layer is disposed on the first inorganic thin film encapsulation layer and the organic thin film encapsulation layer, and the second inorganic thin film encapsulation layer, the first inorganic thin film encapsulation layer and the organic thin film encapsulation layer together constitute a thin film encapsulation structure.

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