A spectrum-enhanced light-emitting device and a method for manufacturing the same

Abstract

A spectrum-enhanced light-emitting device and a manufacturing method, the spectrum-enhanced light-emitting device comprises a substrate, a first light-emitting diode unit with a cavity structure, a second light-emitting diode unit, and a fluorescent powder colloid; the first light-emitting diode unit is inverted and arranged on the surface of the substrate; the second light-emitting diode unit is inverted and arranged on the surface of the substrate and is located inside the cavity of the first light-emitting diode unit; the fluorescent powder colloid covers the surface of the first light-emitting diode unit. Integrating multiple different light-emitting diode units into a smaller volume can avoid uneven spatial color distribution and surface color differences caused by differences in the excitation positions of the fluorescent body due to the different positions of the different wavelength diode units in the bracket; finally, a single light-emitting body center is conducive to reducing the overall area of ​​the packaged light source and is also convenient for secondary optical design.

Description

Technical Field

[0001] The invention belongs to the technical field of LEDs, and in particular relates to a spectrum-enhanced light-emitting device and a manufacturing method thereof. Background Art

[0002] With the popularization of semiconductor lighting technology, more and more lighting designs use light-emitting diode light sources. At the same time, due to its advantages such as energy saving, environmental protection, and small size, it has derived more and more application design solutions in the fields of general lighting, special lighting, automotive lighting, etc.

[0003] In daily life, people have been pursuing beautiful scene designs. When designing lighting, we need to consider controllability and intelligence, as well as the impact of lighting on people's feelings and emotions. Some current studies have shown that special spectra have an important impact on people's work efficiency and life experience. Adding special designs to light-emitting diode units and changing the spectrum distribution have a greater impact on people themselves. Therefore, human-centered lighting has gradually become popular.

[0004] For example, some studies have shown that adding a 490nm wavelength spectrum to the ordinary lighting spectrum can affect the hormone secretion of the human body. Other studies have shown that simulating the color changes of natural sunlight from sunrise to sunset can return lighting to nature, reduce damage and reduce fatigue. There are even papers that prove that different light spectra have a significant impact on the efficacy of treating Alzheimer's disease in clinical practice, so a good lighting has a great impact on human health.

[0005] In order to meet the changing needs of light sources in lighting design, multiple light-emitting diode units with different wavelengths are generally packaged in a bracket, and the phosphor is excited by different wavelengths to produce the required spectrum. However, after the multiple light-emitting diode units are packaged side by side to excite the phosphor, the spatial color distribution (color over Angle: COA) and surface color (color over surface: COS) of the packaged light source are quite different, and the volume of the packaged light source cannot be effectively reduced, which limits the design in occasions with limited space. Finally, the different light-emitting center points of multiple side-by-side light-emitting diode units are not conducive to secondary optical design. Summary of the invention

[0006] In order to overcome the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a spectrum-enhanced light-emitting device, aiming to solve the existing problems of large packaging volume and different light-emitting center points of multiple side-by-side light-emitting diode units being unfavorable for secondary optical design.

[0007] In order to achieve the purpose, the technical solution adopted by the present invention is as follows:

[0008] A spectrum-enhanced light-emitting device comprises a substrate, at least one first light-emitting diode unit with a cavity structure, at least one second light-emitting diode unit, and fluorescent powder colloid;

[0009] The light emitted by the first light emitting diode unit has a first wavelength, and the light emitted by the second light emitting diode unit has a second wavelength;

[0010] The first light emitting diode unit is flip-chip mounted on the surface of the substrate;

[0011] The second light emitting diode unit is flip-chip mounted on the surface of the substrate and is located inside the cavity of the first light emitting diode unit;

[0012] The fluorescent powder colloid covers the surface of the first light emitting diode unit.

[0013] Preferably, the substrate of the first light emitting diode unit is made of sapphire or gallium nitride.

[0014] Preferably, the cavity of the first light emitting diode unit is filled with a light guiding material, and the light guiding material is one of silicone material, resin material, glass material, acrylic material, or a combination of the above materials.

[0015] Preferably, the structure of the cavity is a cuboid, a cube, a cylinder, a sphere, a hemisphere, a spherical table, a cone, a frustum, a truncated cone, or a combination of the above.

[0016] Preferably, the cavity depth of the cavity is equal to or greater than the thickness of the epitaxial layer of the second light emitting diode unit.

[0017] Preferably, the refractive index of the light-guiding material is between that of the first light-emitting diode unit and the second wavelength light-emitting diode unit.

[0018] The present invention also discloses a method for manufacturing a spectrum-enhanced light-emitting device, comprising the following steps:

[0019] Manufacturing a P-type electrode, an N-type electrode and a cavity suitable for a flip-chip process on the first light-emitting diode unit and the second light-emitting diode unit by photolithography, chemical corrosion, etching, ion bombardment, metal evaporation and sputtering;

[0020] Mounting the second light emitting diode unit on the substrate to achieve electrical connection;

[0021] The substrate of the second light emitting diode unit mounted on the substrate is peeled off by laser ablation and chemical etching method;

[0022] Filling a light-guiding material in the cavity of the first light-emitting diode unit;

[0023] Mounting the substrate with the second LED unit onto the first LED unit, wherein the cavity of the first LED unit accommodates the second LED unit, the light-guiding material surrounds the second LED unit and fills the cavity of the first LED unit, and the substrate realizes electrical connection with the first LED unit;

[0024] The surface of the first light emitting diode unit is covered with fluorescent colloid to complete the encapsulation.

[0025] Preferably, the light-guiding material is one of silicone material, resin material, glass material, acrylic material, or a combination of the above materials.

[0026] Preferably, the refractive index of the light-guiding material is between that of the first light-emitting diode unit and the second light-emitting diode unit.

[0027] Compared with the prior art, the solution of the present invention has the following specific beneficial effects:

[0028] First, by integrating light-emitting diode units of different wavelengths together, different wavelength and spectrum requirements can be realized in one packaging unit, and spectrum changes and color gamut adjustments can be arbitrarily realized; secondly, by integrating multiple light-emitting diode units of different wavelengths in a smaller volume, uneven spatial color distribution and surface color differences caused by differences in the excitation positions of the phosphors due to the different positions of the diode units of different wavelengths in the bracket can be avoided; finally, a single light-emitting body center is conducive to reducing the overall area of ​​the packaged light source and is also convenient for secondary optical design. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying any creative work.

[0030] Figure 1 is a structural cross-sectional view of a spectrum-enhanced light-emitting device according to Embodiment 1 of the present invention;

[0031] Figure 2 This is a schematic diagram of a spectrum excited by the spectrum-enhanced light-emitting device of Example 1 of the present invention;

[0032] Figure 3 It is a schematic diagram of the prior art solution;

[0033] Figure 4 is a structural diagram corresponding to S2 of the manufacturing method of Example 1 of the present invention;

[0034] Figure 5 is a structural diagram corresponding to S4 of the manufacturing method of Example 1 of the present invention;

[0035] Figure 6 is a structural diagram corresponding to S5 of the manufacturing method of Example 1 of the present invention;

[0036] Figure 7 is a structural cross-sectional view of a spectrum-enhanced light-emitting device according to Embodiment 2 of the present invention;

[0037] Figure 8 This is a schematic diagram of a spectrum excited by the spectrum-enhanced light-emitting device of Example 2 of the present invention;

[0038] Fig. 9 It is a structural cross-sectional view of the spectrum-enhanced light-emitting device of Example 3 of the present invention.

[0039] Description of reference numerals:

[0040] 1-substrate, 2-first light emitting diode unit, 3-substrate, 4-second light emitting diode unit, 5-light guiding material, 6-phosphor colloid, 7-third light emitting diode unit. DETAILED DESCRIPTION

[0041] In order to more clearly understand the above-mentioned objects, features and advantages of the present invention, the present invention is described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other. In the following description, many specific details are set forth in order to fully understand the present invention, and the embodiments described are only part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in the field without making creative work are within the scope of protection of the present invention.

[0042] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used in the specification of the present invention herein are only for the purpose of describing specific embodiments and are not intended to limit the present invention.

[0043] Example 1

[0044] See also Figure 1 , is a structural cross-sectional view of a spectrum-enhanced light-emitting device according to Example 1 of the present invention.

[0045] The spectrum-enhanced light-emitting device comprises: a substrate 1, a first light-emitting diode unit 2, a second light-emitting diode unit 4 and a fluorescent powder colloid 6;

[0046] The light emitted by the first light emitting diode unit has a first wavelength, and the light emitted by the second light emitting diode unit has a second wavelength; the first light emitting diode unit 2 is provided with a cavity structure;

[0047] The first light-emitting diode unit 2 is inverted on the substrate 1, the second light-emitting diode unit 4 is inverted on the substrate 1 and accommodated in the cavity of the first light-emitting diode unit, the phosphor colloid 6 is placed on the first light-emitting diode unit 2 and covers the surface of the light-emitting diode unit; the light-guiding material 5 is filled in the cavity of the first light-emitting diode unit 2 and surrounds the second light-emitting diode unit 4.

[0048] The light from the second LED unit 4 penetrates the substrate 3 of the first LED unit, passes through the light-guiding material 5, and then penetrates the first LED unit 2 and the substrate 3, and together with the wavelength emitted by the first LED unit 2, excites the phosphor layer to achieve a change in the spectral structure and realize the desired spectral range and color gamut targets. Figure 2 for Figure 1 A schematic diagram of a spectrum excited by the spectrum-enhanced light-emitting device, wherein the first wavelength is 440-445 nm and the second wavelength is 465-470 nm.

[0049] Reference Figure 3 Compared with the existing technical solutions, the spectrum-enhanced light-emitting device of the present invention can effectively adjust the spectrum emitted by the first light-emitting diode unit 2 to excite the phosphor colloid 6 by selecting different second light-emitting diode units 4, enhance the required spectrum intensity, and expand the spectrum range lacking in the first light-emitting diode unit 2; secondly, the first light-emitting diode unit 2 encapsulating the second light-emitting diode unit 4 can shorten the distance between different light-emitting center points, overlap the light-emitting points, effectively improve the distribution of light in space between the first light-emitting diode unit 2 and the second light-emitting diode unit 4, improve the excitation of the phosphor colloid, and reduce the spatial color distribution and surface color differences. Thirdly, the first light-emitting diode unit 2 encapsulating the second light-emitting diode unit 4 can reduce the area of ​​the chip in the substrate 1, reduce the size of the packaging space, make the package more compact, and be beneficial for applications in places with limited space. The overlapping light-emitting point centers also facilitate secondary optical design.

[0050] Furthermore, the substrate 3 of the first light-emitting diode unit is made of sapphire or gallium nitride. Sapphire or gallium nitride is light-transmissive. Specifically, the first light-emitting diode unit is a sapphire gallium nitride emitting a wavelength of 450-460nm, and the second light-emitting diode unit is a sapphire gallium nitride emitting a wavelength of 405-415nm. Then, the light with a wavelength of 405-415nm can penetrate the first light-emitting diode unit to optimize the light-emitting effect.

[0051] Furthermore, the cavity of the first light emitting diode unit is filled with a light guiding material, and the light guiding material is one of silicone material, resin material, glass material, acrylic material, or a combination of the above materials.

[0052] Furthermore, the structure of the cavity is a cuboid, a cube, a cylinder, a sphere, a hemisphere, a spherical table, a cone, a frustum, a truncated cone, or a group of the above.

[0053] Furthermore, the cavity depth of the cavity is equal to or greater than the thickness of the epitaxial layer of the second light-emitting diode unit. Because the cavity of the first light-emitting diode unit needs to accommodate the thickness of the second light-emitting diode unit, and generally the thickness of the epitaxial layer of the first light-emitting diode unit is consistent with the thickness of the epitaxial layer of the second light-emitting diode unit, the epitaxial layer of the first light-emitting diode unit must be completely etched away to have enough space to accommodate the second light-emitting diode unit.

[0054] Furthermore, the refractive index of the light-guiding material is between that of the first LED unit and the second LED unit, which can effectively reduce the light loss of the light emitted by the second LED unit in the cavity of the first LED unit.

[0055] Reference Figures 4 to 6 , is the corresponding production method, the steps are as follows:

[0056] S1. Fabricating a P-type electrode, an N-type electrode and a cavity suitable for a flip-chip process on the first light-emitting diode unit and the second light-emitting diode unit by photolithography, chemical corrosion, etching, ion bombardment, metal evaporation and sputtering;

[0057] S2, installing the second light emitting diode unit on the substrate to achieve electrical connection;

[0058] S3, peeling off the substrate of the second light emitting diode unit mounted on the substrate by laser ablation or chemical etching;

[0059] S4, filling the cavity of the first light emitting diode unit with a light guiding material;

[0060] S5, mounting the substrate with the second LED unit on the first LED unit, wherein the cavity of the first LED unit accommodates the second LED unit, the light-guiding material surrounds the second LED unit and fills the cavity of the first LED unit, and the substrate realizes electrical connection with the first LED unit;

[0061] S6. Cover the surface of the first light emitting diode unit with fluorescent colloid to complete the packaging.

[0062] Example 2

[0063] See also Figure 7 , is a side view of another embodiment of a spectrum-enhanced light-emitting device of the present invention.

[0064] The structure of the spectrum-enhanced light-emitting device includes: a first light-emitting diode unit 2 , a second light-emitting diode unit 4 , and a third light-emitting diode unit 7 .

[0065] The light emitted by the first LED unit has a first wavelength, the light emitted by the second LED unit has a second wavelength, and the light emitted by the third LED unit has a third wavelength. The second LED unit 4 and the third wavelength LED unit 7 are flip-chip fixed on the substrate and accommodated in the cavity of the first LED unit 2.

[0066] The difference between this spectrum enhanced light-emitting device and Example 1 is that the second light-emitting diode unit and the third wavelength light-emitting diode unit covered by the first light-emitting diode unit, the second light-emitting diode unit and the third wavelength light-emitting diode unit jointly penetrate the substrate of the first light-emitting diode unit to adjust the spectral structure of the package. Figure 8 This is a spectrum structure description of this embodiment, wherein the first wavelength is 440-445nm, the second wavelength is 465-470nm, and the third wavelength is 480-485nm.

[0067] Furthermore, this embodiment does not limit the number of other light emitting semiconductors outside the first light emitting diode unit.

[0068] Example 3

[0069] See also Fig. 9 , is a side view of an embodiment of a spectrum enhanced light-emitting device of the present invention.

[0070] The structure of the spectrum enhanced light-emitting device includes: the third light-emitting diode unit 7 is flip-chip fixed on the substrate; the second light-emitting diode unit 4 is flip-chip fixed on the substrate, and the cavity of the second light-emitting diode unit accommodates the third light-emitting diode unit 7; the first light-emitting diode unit is flip-chip fixed on the substrate, and the cavity of the first light-emitting diode unit accommodates the second light-emitting diode unit with the third light-emitting diode unit.

[0071] The difference between the spectrum-enhanced light-emitting device and the above-mentioned embodiments 1 and 2 is that the first light-emitting diode unit 2 and the second light-emitting diode unit 4 both contain cavities, and the first light-emitting diode unit 2 covers the second light-emitting diode unit 4, and the second light-emitting diode unit 4 covers the third light-emitting diode unit 7. This structure can achieve the overlap of the three light-emitting points of the first light-emitting diode unit, the second light-emitting diode unit, and the third light-emitting diode unit, while providing more spectral spectra, it can also avoid the degradation of spatial color and surface color quality.

[0072] Furthermore, this embodiment does not limit the number of covers and stacks of light-emitting diode units of different wavelengths.

[0073] The above description is only a preferred embodiment of the present invention and does not limit the present invention in any form. Therefore, any modification, equivalent change and modification made to the above embodiment according to the technical essence of the present invention without departing from the technical solution of the present invention shall still fall within the scope of the technical solution of the present invention.

Claims

1. A spectrum-enhanced light-emitting device, characterized in that: It includes a substrate, at least one first light-emitting diode unit with a cavity structure, at least one second light-emitting diode unit, and fluorescent powder colloid; The light emitted by the first light emitting diode unit has a first wavelength, and the light emitted by the second light emitting diode unit has a second wavelength; The first light emitting diode unit is flip-chip mounted on the surface of the substrate; The fluorescent powder colloid covers the surface of the first light emitting diode unit; Manufacturing a P-type electrode, an N-type electrode and a cavity suitable for a flip-chip process on the first light-emitting diode unit and the second light-emitting diode unit by photolithography, chemical corrosion, etching, ion bombardment, metal evaporation and sputtering; The second light emitting diode unit is flip-chip mounted on the surface of the substrate and is located inside the cavity of the first light emitting diode unit. The cavity of the first light emitting diode unit is filled with a light guiding material, and the light guiding material surrounds the second light emitting diode unit. The refractive index of the light-guiding material is between the first light-emitting diode unit and the second light-emitting diode unit.

2. The spectrum-enhanced light-emitting device according to claim 1, characterized in that: The substrate of the first light emitting diode unit is made of sapphire or gallium nitride.

3. The spectrum-enhanced light-emitting device according to claim 1, characterized in that: The structure of the cavity is a cuboid, a cube, a cylinder, a sphere, a hemisphere, a spherical table, a cone, a frustum, a truncated cone, or a combination of the above.

4. The spectrum-enhanced light-emitting device according to claim 1, characterized in that: The cavity depth of the cavity is equal to or greater than the thickness of the epitaxial layer of the second light emitting diode unit.

5. A method for manufacturing a spectrum-enhanced light-emitting device, characterized in that: The method for manufacturing a spectrum-enhanced light-emitting device according to any one of claims 1 to 4 comprises the following steps: Manufacturing a P-type electrode, an N-type electrode and a cavity suitable for a flip-chip process on the first light-emitting diode unit and the second light-emitting diode unit by photolithography, chemical corrosion, etching, ion bombardment, metal evaporation and sputtering; Mounting the second light emitting diode unit on the substrate to achieve electrical connection; The substrate of the second light emitting diode unit mounted on the substrate is peeled off by laser ablation and chemical etching method; Filling a light-guiding material in the cavity of the first light-emitting diode unit; Mounting the substrate with the second LED unit onto the first LED unit, wherein the cavity of the first LED unit accommodates the second LED unit, the light-guiding material surrounds the second LED unit and fills the cavity of the first LED unit, and the substrate realizes electrical connection with the first LED unit; The surface of the first light emitting diode unit is covered with fluorescent colloid to complete the encapsulation.

6. The method for manufacturing a spectrum-enhanced light-emitting device according to claim 5, characterized in that: The light-guiding material is one of silicone material, resin material, glass material, acrylic material, or a combination of the above materials.

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