Method for processing substrate and apparatus for processing substrate

Abstract

A method for processing a substrate is provided, the method for processing the substrate comprising: removing a film formed on the substrate; performing pretreatment using a processing gas in a plasma state to surface-treat the film formed on the substrate; and performing liquid treatment to remove the film from the substrate by supplying a processing liquid to the substrate after the pretreatment.

Description

Technical Field

[0001] Embodiments of the inventive concepts disclosed herein relate to methods and apparatuses for processing a substrate, and more particularly, to methods and apparatuses for removing a film from a substrate. Background Art

[0002] Generally, a semiconductor device is manufactured by repeatedly performing various unit processes such as a thin film deposition process, a photolithography process, an etching process, a cleaning process, and a polishing process.

[0003] Among them, the etching process is to remove the film formed by the substrate. The film can be a thin film or a natural oxide film used to form a pattern. Depending on the method used to perform the process, the etching process is divided into a wet etching process and a dry etching process.

[0004] According to the dry etching process, a film on a substrate is etched using plasma. Typically, the dry etching process is performed by allowing ion particles contained in the plasma to collide with the substrate. Plasma refers to a state of ionized gas containing ions, electrons, and free radicals. Typically, in order to form plasma, an electromagnetic field is formed in the inner space of a chamber, and the electromagnetic field excites the process gas disposed in the chamber into a plasma state. Plasma is generated by very high temperatures, strong electric fields, or radio frequency (RF) electromagnetic fields.

[0005] The dry etching process can etch fine patterns in the substrate with higher precision. However, according to the dry etching process, byproducts such as polymers including carbon (C), oxygen (O), nitrogen (N) and fluorine (F) are generated and adhere to the peripheral portion of the substrate. In addition, the substrate can be easily damaged by plasma.

[0006] Generally, according to the wet etching process, an etchant is applied to a substrate through a liquid supply nozzle while the substrate is rotated so that the etchant is spread over the entire surface of the substrate by centrifugal force, thereby etching the substrate.

[0007] The wet etching process has the advantages of low cost, higher etching speed and higher selectivity. However, according to the wet etching process, toxic waste is generated by the etchant, and the etchant is supplied to the central area of ​​the rotating substrate, so that the central area of ​​the substrate is etched more than the edge area of ​​the substrate. Summary of the invention

[0008] Embodiments of the inventive concept provide a method for processing a substrate and an apparatus for processing a substrate, which can minimize damage to the substrate during etching of the substrate.

[0009] Embodiments of the inventive concept provide a method for processing a substrate and an apparatus for processing a substrate, which can minimize by-products in a process of etching the substrate.

[0010] Embodiments of the inventive concept provide a method for processing a substrate and an apparatus for processing a substrate, which can minimize the amount of an etchant used in a process of etching the substrate.

[0011] Embodiments of the inventive concept provide a method for processing a substrate and an apparatus for processing a substrate, which can improve etching efficiency used in a process of etching a substrate.

[0012] Embodiments of the inventive concept provide a method for processing a substrate and an apparatus for processing a substrate, which are capable of providing a uniform etching degree in an entire region of the substrate during etching of the substrate.

[0013] The present inventive concept provides a method for processing a substrate. According to an exemplary embodiment, the method for processing a substrate may include: removing a film formed on the substrate; performing pre-processing using a processing gas in a plasma state to surface-process the film formed on the substrate; and performing liquid processing by supplying a processing liquid onto the substrate after the pre-processing to remove the film from the substrate.

[0014] According to one embodiment, the surface treatment may include changing the properties of the film without etching the film.

[0015] According to one embodiment, in the pre-processing, the amount of plasma supplied to the edge region of the substrate may be different from the amount of plasma supplied to the central region of the substrate.

[0016] According to one embodiment, in the liquid processing step, the processing liquid may be supplied onto the rotating substrate.

[0017] According to one embodiment, the process liquid is fixed at a position opposite to the central area of ​​the substrate while the substrate is rotated.

[0018] According to one embodiment, the film may be a natural oxide film.

[0019] According to one embodiment, the process gas may include hydrogen atoms.

[0020] According to one embodiment, the process gas may include hydrogen and ammonia.

[0021] According to one embodiment, the process liquid may include fluorine.

[0022] In addition, the present invention contemplates providing an apparatus for processing a substrate. According to an exemplary embodiment, the apparatus for processing a substrate may include: a plasma processing unit for processing a surface of the substrate by supplying a processing gas in a plasma state; a liquid processing unit for removing a film from the substrate by supplying a processing liquid onto the substrate; a conveying unit for conveying the substrate between the plasma processing unit and the liquid processing unit; and a controller for controlling the plasma processing unit, the liquid processing unit, and the conveying unit. The controller may control the plasma processing unit, the liquid processing unit, and the conveying unit when removing the film from the substrate, so as to process the surface of the film of the substrate using the processing gas in the plasma state in the plasma processing unit, and remove the film from the substrate using the processing liquid in the liquid processing unit after conveying the substrate from the plasma processing unit to the liquid processing unit.

[0023] According to one embodiment, the surface treatment may include changing the properties of the film without etching the film.

[0024] According to one embodiment, the plasma processing unit includes a processing chamber having a processing space therein; a supporting unit for supporting the substrate; a gas supply unit for supplying the processing gas into the processing chamber; and a plasma source for putting the processing gas in a plasma state.

[0025] According to one embodiment, the gas supply unit may be configured to adjust an amount of gas supplied to a central region of the substrate and an amount of gas supplied to an edge region of the substrate.

[0026] According to one embodiment, the plasma processing unit may further include a showerhead for supplying the processing gas into the processing chamber. The showerhead may include a central region supply unit for spraying the processing gas to the central region of the substrate; and an edge region supply unit for spraying the processing gas to the edge region of the substrate. The controller may control the gas supply unit so that the amount of the processing gas supplied by the edge region supply unit is greater than the amount of the processing gas supplied by the central region supply unit.

[0027] According to one embodiment, the liquid processing unit may include a cup having a processing space therein; a supporting unit for supporting the substrate in the processing space and being rotatably arranged; and a liquid supply unit for supplying the processing liquid to the substrate supported by the supporting unit.

[0028] According to one embodiment, the liquid supply unit may supply the processing liquid to the central region of the rotating substrate.

[0029] According to one embodiment, the liquid supply unit may include a nozzle for supplying the processing liquid onto the substrate, and the nozzle may be disposed to be fixed at a position opposite to the central area of ​​the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The above and other objects and features will become apparent from the following description with reference to the accompanying drawings, in which like reference numerals refer to like parts throughout the various drawings unless otherwise specified, and in which:

[0031] Figure 1 is a diagram schematically illustrating an apparatus for processing a substrate according to an embodiment of the inventive concept;

[0032] Figure 2 is a cross-sectional view illustrating a plasma processing unit according to an embodiment of the inventive concept;

[0033] Figure 3 is a cross-sectional view illustrating a liquid processing unit according to an embodiment of the inventive concept;

[0034] Figure 4 is a flowchart illustrating a method for processing a substrate according to an embodiment of the inventive concept; and

[0035] Figures 5 to 8 are diagrams sequentially illustrating a method for processing a substrate according to an embodiment of the inventive concept. DETAILED DESCRIPTION

[0036] The embodiments of the inventive concept can be modified in various forms, and the scope of the inventive concept should not be interpreted as being limited by the embodiments of the inventive concept described below. The embodiments of the inventive concept are provided to more completely describe the inventive concept for those skilled in the art. Therefore, the shapes of the components in the drawings, etc. are enlarged to emphasize a clearer description. Throughout the specification, the same reference numerals refer to the same elements. The inventive concept is not limited to the embodiments disclosed herein.

[0037] Figure 1 Schematically illustrates an apparatus 1 for processing a substrate according to an embodiment of the inventive concept. Figure 1, an apparatus 1 for processing a substrate has an indexing module 10 and a process processing module 20, and the indexing module 10 includes a loading port 120 and a conveying frame 140. The loading port 120, the conveying frame 140, and the process processing module 20 may be arranged in a row in sequence. Hereinafter, a direction in which the loading port 120, the conveying frame 140, and the process processing module 20 are arranged is referred to as a first direction 12, a direction perpendicular to the first direction 12 when viewed from above is referred to as a second direction 14, and a direction orthogonal to a plane containing the first direction 12 and the second direction 14 when erected is referred to as a third direction 16.

[0038] The carrier 130 in which the substrate 'W' is received is seated on the load port 120. A plurality of load ports 120 are provided and arranged in a straight line in the second direction 14. The number of the load ports 120 may be increased or decreased depending on the processing efficiency and the occupied area condition or occupied area of ​​the process processing module 20. The carrier 130 has a plurality of slots (not shown) to receive the substrate 'W' arranged horizontally on the ground. A front opening unified wafer box (FOUP) may be used as the carrier 130.

[0039] The process treatment module 20 has a buffer unit 220, a transfer chamber 240 and a processing chamber 260. The transfer chamber 240 is arranged so that its length direction is parallel to the first direction 12. The processing chamber 260 is arranged at the opposite side of the transfer chamber 240. The processing chamber 260 can be arranged at one side and the opposite side of the transfer chamber 240 so as to be arranged symmetrically with each other around the transfer chamber 240. A plurality of processing chambers 260 are arranged at one side of the transfer chamber 240. Some of the processing chambers 260 are arranged in the length direction of the transfer chamber 240. In addition, some of the processing chambers 260 are arranged to be stacked on each other. That is, the processing chambers 260 can be arranged in an Ax B matrix at one side of the transfer chamber 240. In this case, "A" is the number of processing chambers 260 arranged in a row in the first direction 12, and "B" is the number of processing chambers 260 arranged in a row in the third direction 16. When four or six process chambers 260 are provided at one side of the transfer chamber 240, the process chambers 260 may be arranged as 2 x 2 or 3 x 2. The number of process chambers 260 may be increased or decreased. Alternatively, the process chambers 260 may be provided only at either side of the transfer chamber 240. In addition, differently, the process chambers 260 may be provided in a single layer at one side and the opposite side of the transfer chamber 240.

[0040] The buffer unit 220 is interposed between the transfer frame 140 and the transfer chamber 240. The buffer unit 220 provides a space in which the substrate 'W' stays before being transferred between the transfer chamber 240 and the transfer frame 140. A slot (not shown) is provided in the buffer unit 220, in which the substrate W is placed, and a plurality of slots (not shown) are spaced apart from each other in the third direction 16. The buffer unit 220 is open in a surface facing the transfer frame 140 and the transfer chamber 240.

[0041] The transfer frame 140 transfers the substrate 'W' between the carrier 130 seated on the loading port 120 and the buffer unit 220. The transfer frame 140 includes a graduation track 142 and a graduation robot 144. The graduation track 142 is arranged so that its length direction is parallel to the second direction 14. The graduation robot 144 is installed on the graduation track 142 and moves in the second direction 14 along the graduation track 142. The graduation robot 144 may include a base 144a, a main body 144b and a graduation arm 144c. The base 144a may be installed to be able to move along the graduation track 142. The main body 144b may be connected to the base 144a. The main body 144b may be arranged to be able to move on the base 144a in the third direction 16. In addition, the main body 144b may be arranged to be able to rotate on the base 144a. The indexing arm 144c can be connected to the main body 144b so that the indexing arm 144c can move forward and backward relative to the main body 144b. A plurality of indexing arms 144c can be provided and can be driven independently of each other. The indexing arms 114c are arranged to be stacked one on top of another in the third direction 16 while being spaced apart from each other. When the substrate 'W' is transferred from the process treatment module 20 to the carrier 130, some of the indexing arms 144c are used, and when the substrate 'W' is transferred from the carrier 130 to the process treatment module 20, other indexing arms 144c can be used. This structure can prevent particles generated by the substrate 'W' before the process treatment from sticking to the substrate 'W' after the process treatment in the process in which the indexing robot 144 introduces and takes out the substrate 'W'.

[0042] The transfer chamber 240 transfers the substrate 'W' between any two of the buffer unit 220 and the processing chamber 260 and between the processing chambers 260. A guide rail 242 and a main robot 244 are provided in the transfer chamber 240. The guide rail 242 is provided so that its length direction is parallel to the first direction 12. The main robot 244 is mounted on the guide rail 242 and moves linearly on the guide rail 242 in the first direction 12. The main robot 244 may include a base 244a, a main body 244b, and a main arm 244c. The base 244a may be installed to be able to move along the guide rail 242. The main body 244b may be coupled to the base 244a. The main body 244b may be provided to be able to move on the base 244a in the third direction 16. In addition, the main body 244b may be provided to be able to rotate on the base 244a. The main arm 244c can be connected to the main body 244b so that the main arm 244c can move forward and backward relative to the main body 244b. A plurality of main arms 244c can be provided and can be driven independently of each other. The main arms 244c are arranged to be stacked one on top of another in the third direction 16 while being spaced apart from each other.

[0043] The processing chambers 260 are divided into a plurality of groups, and the equipment for processing the substrates in the processing chambers 260 belonging to the same group has the same structure, and the equipment for processing the substrates belonging to the processing chambers 260 of different groups has mutually different structures. For example, when the processing chambers 260 are divided into two groups, the first group of processing chambers 260 is disposed at one side of the transfer chamber 240, and the second group of processing chambers 260 may be disposed at the opposite side of the transfer chamber 240. Alternatively, at the opposite sides of the transfer chamber 240, the first group of processing chambers 260 may be disposed at the lower layer, and the second group of processing chambers 260 may be disposed at the upper layer. The first group of processing chambers 260 and the second group of processing chambers 260 may be divided depending on the type of chemicals used and the type of the way of using the chemicals. Differently, the first group of processing chambers 260 and the second group of processing chambers 260 may be disposed so that the process may be performed in sequence with respect to one substrate 'W'. For example, a pre-treatment process for preparing to etch the substrate 'W' is performed with respect to the substrate 'W' in the first group of processing chambers 260, and an etching process may be performed in the second group of processing chambers 260. For example, the plasma processing unit 250 may be disposed in the first group of processing chambers 260, and the liquid processing unit 300 may be disposed in the second group of processing chambers 260. For example, the plasma processing unit 250 and the liquid processing unit 300 may be disposed in parallel. Alternatively, the plasma processing unit 250 and the liquid processing unit 300 may be disposed to face each other based on the first direction 12.

[0044] In the following, reference will be made to Figure 2 and Figure 3The plasma processing unit 250 and the liquid processing unit 300 are described. Figure 2 and Figure 3 2 is a diagram schematically illustrating a plasma processing unit 250 and a liquid processing unit 300 according to an embodiment of the inventive concept.

[0045] refer to Figure 2 , the plasma processing unit 250 includes a processing chamber 110 , a gas supply unit 2300 , a plasma source 2120 , and a support unit 2130 .

[0046] A processing space 2100 for performing a process is provided in the processing chamber 110. For example, the processing chamber 110 includes a metal sidewall 2114 and a metal base 2113. The metal sidewall 2114 and the metal base 2113 are grounded. An exhaust hole 2103 is formed in the metal base 2113. The exhaust hole 2103 is connected to an exhaust line 2432. A vacuum pump 2430 is connected to the processing chamber 110 through the exhaust line 2432. The vacuum pump 2430 exhausts the interior of the processing chamber 110 so that the interior of the processing chamber 110 maintains an appropriate pressure. The gas remaining in the processing chamber 110 is exhausted through the exhaust line 2432. Therefore, the gas can be exhausted from the processing chamber 110. In addition, the pressure of the internal space of the processing chamber 110 is reduced to a specific pressure through the exhaust process.

[0047] An opening (not shown) is formed in the metal sidewall 2114 of the process chamber 110. The opening serves as a passage for the substrate 'W' to enter the process chamber 110.

[0048] The gas supply unit 2300 supplies the process gas to the process space 2100. For example, the gas supply unit 2300 includes a showerhead 2116, a center gas supply line 2322, an edge gas supply line 2324, a distributor 2330, and a gas supply source 2500.

[0049] The showerhead 2116 supplies the processing gas to the processing space 2100 through a plurality of holes. The showerhead 2116 has a plurality of holes (gas injection holes) 2115a and 2115b. The processing gas is injected through the gas injection holes 2115a and 2115b. The showerhead 2116 has a plurality of gas injection holes 2115a and 2115b. The showerhead 2116 has a central area supply unit X1 and an edge area supply unit X2. The central area supply unit X1 injects the processing gas to the central area of ​​the substrate 'W' through the gas injection hole 2115a. The edge area supply unit X2 injects the processing gas to the edge area of ​​the substrate 'W' through the gas injection hole 2115b.

[0050] The central gas supply line 2322 supplies the process gas to the central area supply unit X1 of the showerhead 2116. The edge gas supply line 2324 supplies the process gas to the edge area supply unit X2 of the showerhead 2116. The distributor 2330 distributes a certain amount of process gas from the gas supply source 2500 to the central gas supply line 2322 and the edge gas supply line 2324. The process gas is supplied to the processing space 2100 through the gas injection holes 2115a and 2115b.

[0051] The plasma source 2120 excites the process gas supplied to the process space 2100 into a plasma state. For example, the plasma source 2120 includes a first electrode 2112, a second electrode 2132, a power supply 2122, and a matching network 2124.

[0052] The first electrode 2112 and the second electrode 2132 are disposed in the process chamber 110 to face each other. For example, the first electrode 2112 is disposed to be coupled to an upper portion of the shower head 2116. The first electrode 2112 is disposed to be electrically connected to the shower head 2116. The second electrode 2132 is disposed in the support unit 2130. The power supply 2122 provides a voltage to the first electrode 2112 and the second electrode 2132 through the matching network 2124.

[0053] The support unit 2130 supports the substrate 'W' in the process space 2100. The substrate 'W' is placed on the second electrode 2132. For example, the support unit 2130 includes an electrostatic chuck 2134, a second electrode 2132, a heating member 2135, and a cooling member 2136.

[0054] The electrostatic chuck 2134 holds the substrate 'W' by electrostatic force. The first electrode 2112 and the second electrode 2132 are positioned to face each other, and the substrate 'W' is biased by a voltage applied to each electrode. Therefore, the charged particles in the processing chamber 110 are attracted toward the substrate 'W'. During the process, the heating member 2135 and the cooling member 2136 maintain the substrate 'W' at the process temperature. For example, the heating member 2135 can be provided in the form of a heating wire, and the cooling member 2136 can be provided in the form of a cooling pipe through which a refrigerant flows.

[0055] refer to Figure 3, the liquid treatment unit 300 includes a cup 3200, a support unit 3400, a lifting unit 3600 and a liquid discharge unit 3800. The cup 3200 has a processing space for performing a substrate treatment process and an opened upper portion. The cup 3200 has an internal recovery barrel 3220, an intermediate recovery barrel 3240 and an external recovery barrel 3260. The internal recovery barrel 3220, the intermediate recovery barrel 3240 and the external recovery barrel 3260 recover different treatment liquids for the treatment liquid of the process. The internal recovery barrel 3220 is arranged in an annular shape to surround the support unit 3400, the intermediate recovery barrel 3240 is arranged in an annular shape to surround the internal recovery barrel 3220, and the external recovery barrel 3260 is arranged in an annular shape to surround the intermediate recovery barrel 3240.

[0056] The inner space 3220a of the inner recovery barrel 3220, the space 3240a between the inner recovery barrel 3220 and the middle recovery barrel 3240, and the space 3260a between the middle recovery barrel 3240 and the outer recovery barrel 3260 are used as inlets to introduce the treatment liquid into the inner recovery barrel 3220, the middle recovery barrel 3240 and the outer recovery barrel 3260, respectively. The inner recovery barrel 3220, the middle recovery barrel 3240 and the outer recovery barrel 3260 are connected to the recovery lines 3220b, 3240b and 3260b extending vertically downward from the bottom surface thereof. The recovery lines 3220b, 3240b and 3260b discharge the treatment liquid introduced into the inner recovery barrel 3220, the middle recovery barrel 3240 and the outer recovery barrel 3260, respectively. The discharged process liquid may be recycled through an external process liquid recycling system (not shown).

[0057] The lifting unit 3600 linearly moves the cup 3200 in the vertical direction. As the cup 3200 moves upward and downward, the relative height of the cup 3200 relative to the support 3400 changes. The lifting unit 3600 has a bracket 3620, a moving shaft 3640 and a driving unit 3660. The bracket 3620 is fixedly mounted on the outer wall of the cup 3200. The moving shaft 3640, which moves in the vertical direction by the driving unit 3660, is fixedly coupled to the bracket 3620. When the substrate 'W' is placed on or lifted from the support unit 3400, the cup 3200 moves downward so that the support unit 3400 protrudes from the upper part of the cup 3200. The height of the cup 3200 is adjusted so that the processing liquid is introduced into the recovery barrel 3220, 3240, 3260 preset according to the type of processing liquid supplied to the substrate 'W' when performing the process. Alternatively, the elevating unit 3600 may move the supporting unit 3400 in the vertical direction.

[0058] The liquid discharge unit 3800 may supply a processing liquid on the substrate 'W' during the process of processing the substrate 'W'. The liquid discharge unit 3800 has a support shaft 3860, a driving unit 3880, a nozzle support member 3820, and a nozzle 3840. The support shaft 3860 has a length direction set in the third direction 16, and the driving unit 3880 is coupled to the lower end of the support shaft 3860. The driving unit 3880 rotates and moves up and down the support shaft 3860. The nozzle support member 3820 is coupled to the end of the support shaft 3860 perpendicularly to the support shaft 386, and the end is opposite to the end of the support shaft 386 coupled to the driving unit 3880. The nozzle 3840 is installed on the bottom surface of the end portion of the nozzle support member 3820.

[0059] The nozzle 3840 is moved between the process position and the standby position by the driving unit 3880. The process position is a position where the nozzle 3840 is arranged at the vertical upper part of the cup 3200, and the standby position is a position not at the vertical upper part of the cup 3200.

[0060] The liquid discharge unit 3800 may receive liquid from the liquid storage tank 3420. The liquid storage tank 3420 is connected to the liquid supply line 3410. A valve may be provided in the liquid supply line 3410.

[0061] In the following, according to the present invention, reference will be made to Figures 4 to 8 A method for processing a substrate is described. A controller (not shown) may control each processing unit to perform the method for processing a substrate according to the inventive concept. Figure 4 is a diagram illustrating a method for processing a substrate according to an embodiment of the inventive concept, and Figures 5 to 8 1 is a diagram sequentially illustrating a method for processing a substrate according to an embodiment of the inventive concept. In detail, Figure 5 showing processing of a substrate in a plasma processing unit, Figure 6 shows plasma ions colliding with a film formed on a substrate, Figure 7 A substrate is shown being processed in a liquid handling unit, and Figure 8 Removal of the film from the substrate is shown.

[0062] According to the inventive concept, the method for processing a substrate includes a pre-processing step (S10) and a liquid processing step (S20). The pre-processing step (S10) is performed by a plasma processing unit 250. In the pre-processing step (S10), the plasma processing unit 250 performs surface processing on a film formed on the substrate by a processing gas in a plasma state. The liquid processing step (S20) is performed by a liquid processing unit 300. In the liquid processing step (S20), a liquid discharge unit 3800 supplies a processing liquid onto the substrate to remove the film from the substrate.

[0063] In the pre-processing step (S10), a substrate 'W' having a processing surface on which a film is formed is introduced into the plasma processing unit 250. The substrate 'W' is located between the first electrode 2112 and the second electrode 2132. In the pre-processing step (S10), a processing gas is supplied into the processing space 2100. The processing gas is sprayed onto the substrate 'W' through the central area supply unit X1 and the edge area supply unit X2 of the shower head 2116. Thereafter, the processing gas supplied into the processing space 2100 is excited between the first electrode 2112 and the second electrode 2132 to be in a plasma state.

[0064] refer to Figure 6 , ions 'i' contained in the processing gas in the plasma state collide with the substrate 'W'. In this case, the collision of ions 'i' with the substrate 'W' destroys the binding energy of the film 'F' formed on the pattern 'P' of the substrate 'W'. Therefore, the film 'F' is changed to a state in which the film 'F' is easily removed from the substrate 'W'. For example, in the pretreatment step (S10), the film 'F' formed on the substrate 'W' is not etched, but is subjected to surface treatment, so that the film 'F' becomes soft as the binding energy weakens. In the pretreatment step (S10), since the film 'F' is subjected to surface treatment, the etching efficiency and etching uniformity of the substrate 'W' are improved in the liquid treatment step (S20) performed subsequently.

[0065] For example, in order to allow the processing gas in a plasma state to only weaken the binding energy of the film 'F' without etching the film 'F' in the pre-treatment step (S10), in the pre-treatment step (S10), the type of the processing gas supplied, the amount of the processing gas, the number of times the processing gas is supplied, or the voltage that excites the processing gas in a plasma state may be adjusted.

[0066] The film 'F' formed on the substrate 'W' in the pre-treatment step (S10) becomes softer than the film 'F' before the pre-treatment step (S10) is performed. For example, the film 'F' formed on the substrate 'W' is a natural oxide film (SiO 2 In order to soften the natural oxide film (SiO 2), the processing gas supplied to the plasma processing unit 250 may include ammonia (NH 3 ) or fluorocarbon gases, such as hydrogen (H 2 ), helium (He), neon (Ne) or argon (Ar).

[0067] The extent to which ions 'i' collide with substrate 'W' varies depending on the weight of the gas during the collision between ions 'i' and substrate 'W'. For example, a heavier gas, such as argon (Ar), exerts a greater impact on substrate 'W' than a lighter gas, such as hydrogen (H 2 ) impact. Therefore, the film 'F' may be accidentally etched. Therefore, in order to prevent the gas in the plasma state from etching the film 'F', a lighter gas may be selected.

[0068] For example, the process gas supplied in the pre-processing step (S10) may include a gas containing hydrogen atoms (H). 2 ) or ammonia (NH 3 ).

[0069] In addition, as described above, in order to prevent etching of the film 'F' in the pre-treatment step (S10), the type of process gas, the amount of process gas, the number of times the process gas is supplied, or the voltage for exciting the process gas in a plasma state may be adjusted to not etch the film.

[0070] For example, in the liquid treatment step (S20), the treatment liquid is supplied to the central area of ​​the rotating substrate 'W'. Therefore, the edge area of ​​the substrate 'W' is etched more than the central area of ​​the substrate 'W'. Therefore, different amounts of gas may be supplied by the central area supply unit X1 and the edge area supply unit X2 in the pretreatment step (S10), so that the substrate 'W' is prevented from being etched more at the central area of ​​the substrate 'W' than at the edge area of ​​the substrate 'W'.

[0071] For example, the distributor 2330 distributes a larger amount of gas to the edge gas supply line 2324 rather than the central gas supply line 2322. Therefore, a larger amount of gas is supplied through the edge area supply unit X2 rather than the central area supply unit X1. Therefore, in the pre-treatment step (S10), the film formed at the edge area of ​​the substrate 'W' becomes softer than the film formed at the central area of ​​the substrate 'W'. Therefore, although the amount of the processing liquid reaching the edge area of ​​the substrate 'W' is less than the amount of the processing liquid reaching the central area of ​​the substrate 'W', the entire area of ​​the substrate 'W' is uniformly etched in the liquid treatment step (S20). For example, the amount of processing gas supplied by the central area supply unit X1 and the edge area supply unit X2 in the pre-treatment step (S10) can be adjusted based on the difference in the degree of etching performed in the liquid treatment step (S20).

[0072] When the pre-treatment step (S10) is terminated, the substrate 'W' is moved from the plasma treatment unit 250 to the liquid treatment unit 300 by the transfer unit. For example, the transfer unit may be provided at Figure 1 The main robot 244 in the transfer chamber 240.

[0073] In the liquid processing step (S20), the substrate 'W' is placed on the support unit 3400 provided in the liquid processing unit 300, as shown in FIG. Figure 7 As shown. During the process, the support unit 3400 supports and rotates the substrate W. The processing liquid is applied to the rotating substrate 'W'. For example, when the substrate 'W' is rotated by the support unit, the processing liquid is supplied to the central area of ​​the substrate 'W' and spreads to the edge area of ​​the substrate 'W'. The processing liquid applied on the substrate 'W' processes the surface of the substrate.

[0074] For example, the processing liquid is an etchant for etching the substrate 'W'. For example, the processing liquid may be SC-1, APM, diluted HF (DHF) or BOE. In addition, the processing liquid may be an etchant for natural oxide etching to remove the natural oxide film (SiO 2 ) of all types of chemicals. For example, according to the present invention, the processing liquid may be DHF. DHF etches SiO from the surface of the substrate 'W' 2 .like Figure 8 As shown, SiO 2 The processing liquid applied to the substrate 'W' is removed from the substrate 'W' so that only the pattern 'P' remains on the substrate 'W'.

[0075] The above-described embodiment has been made in which the process gas supplied to the process space 2100 is excited to be in a plasma state inside the process space 2100. Differently, the process gas may be supplied to the process space 2100 after being excited to be in a plasma state.

[0076] The above embodiment has been described in which the plasma source 2120 includes an electrode placed at the upper portion of the substrate and an electrode placed at the lower portion of the substrate. However, differently, the plasma source 2120 may include only an electrode placed at the upper portion of the substrate.

[0077] The above embodiment has been described in which the plasma source 2120 includes an electrode placed at the upper portion of the substrate and an electrode placed at the lower portion of the substrate. However, differently, an antenna may be provided instead of the electrode placed at the upper portion of the substrate.

[0078] The above embodiment has been described in which the process gas is hydrogen (H2) supplied to the process space in the pre-processing step (S10). 2 ). However, according to another embodiment, another gas other than hydrogen among the above gases may be supplied, and the amount of the process gas, the number of times the process gas is supplied, or the voltage for generating plasma may be adjusted so that etching is not performed in the pre-processing step (S10).

[0079] The above embodiment has been described in which different amounts of gas may be supplied to the central region of the substrate and the edge region of the substrate in the pre-treatment step (S10) to solve the problem associated with the difference in etching extent between the central region of the substrate and the edge region of the substrate in the liquid treatment step (S20). However, according to another embodiment, different supply times of gas in the pre-treatment step (S10) may be applied to the central region of the substrate and the edge region of the substrate to solve the problem associated with the difference in etching extent between the central region of the substrate and the edge region of the substrate in the liquid treatment step (S20).

[0080] The above embodiments have been described in which the film formed on the substrate is a natural oxide film (SiO 2 ). Thus, the above embodiment has been described in which the etchant supplied in the liquid processing step (S20) is DHF. However, differently, the film formed on the substrate may be a silicon nitride film. Therefore, the etchant supplied in the liquid processing step (S20) may be a liquid for removing the silicon nitride film. For example, the processing liquid may be phosphoric acid (H 3 PO 4 ) or dilute sulfuric acid (H 2 SO 4 ) in an aqueous solution.

[0081] The above embodiment has been described in which, when the central region of the substrate is etched more than the edge region of the substrate in the liquid treatment step (S20), a larger amount of gas is supplied to the edge region of the substrate rather than the central region of the substrate in the pretreatment step (S10). However, according to another embodiment, depending on the etching method of the substrate, a specific region of the substrate may be etched more rather than the central region of the substrate. Therefore, a larger amount of gas may be supplied to the region that is less etched in the pretreatment step (S10).

[0082] According to an embodiment of the inventive concept, since the film is not etched in the pre-treatment step (S10), but only the bonding energy is weakened, byproducts generated when etching a film formed on a substrate by a conventional dry etching method are not formed. In addition, damage to the substrate caused by plasma in a conventional dry etching method can be minimized.

[0083] In addition, according to an embodiment of the present inventive concept, when the properties of the film are changed so that the film becomes soft in the pretreatment step (S10) before the liquid treatment step (S20), the substrate is sufficiently etched in the liquid treatment step (S20). Therefore, the time spent on etching can be reduced in the liquid treatment step (S20), the amount of the treatment liquid can be minimized in the liquid treatment step (S20), and the contaminants generated by the treatment liquid can be minimized.

[0084] In addition, according to an embodiment of the inventive concept, since particles that may be generated in the pre-processing step ( S10 ) are removed in the liquid processing step ( S20 ), particles generated after the process may be minimized.

[0085] In addition, according to an embodiment of the inventive concept, when the amount of the treatment liquid supplied to each region of the substrate is adjusted in the pre-treatment step ( S10 ), the substrate may be uniformly etched in the entire region thereof in the liquid treatment step ( S20 ).

[0086] According to the inventive concept, damage to a substrate may be minimized during etching of the substrate.

[0087] According to the inventive concept, by-products may be minimized during etching of a substrate.

[0088] According to the inventive concept, the amount of etchant used may be minimized in a process of etching a substrate.

[0089] According to the inventive concept, etching efficiency can be improved in a process of etching a substrate.

[0090] According to the inventive concept, the entire region of a substrate may be uniformly etched in the process of etching the substrate.

[0091] The above description is for illustrative purposes. In addition, the above-mentioned contents describe exemplary embodiments of the inventive concept, and the inventive concept can be used for various other combinations, changes and environments. That is, the inventive concept can be modified and corrected without departing from the scope of the inventive concept disclosed in the specification, the equivalent scope of the written disclosure, and / or the technology or knowledge scope of those skilled in the art. The written embodiment describes the best state of the technical spirit for implementing the inventive concept, and various changes required for the detailed application field and purpose of the inventive concept can be made. Therefore, the detailed description of the inventive concept is not intended to limit the inventive concept to the disclosed embodiments. In addition, it should be understood that the attached claims include other embodiments.

[0092] Although the inventive concept has been described with reference to exemplary embodiments, it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the inventive concept. Therefore, it should be understood that the above embodiments are not restrictive but illustrative.

Claims

1. A method for processing a substrate, the method for removing a film formed on the substrate and comprising: performing a pre-treatment using a treatment gas in a plasma state to perform a surface treatment on the film formed on the substrate; as well as performing liquid treatment by supplying a treatment liquid onto the substrate after the pretreatment to remove the film from the substrate, The surface treatment includes causing ions in the processing gas in a plasma state to collide with the film to weaken the binding energy of the film without etching the film.

2. The method according to claim 1, wherein in the pre-processing, the amount of the processing gas per unit area of ​​the substrate supplied to the edge area of ​​the substrate is different from the amount of the processing gas per unit area of ​​the substrate supplied to the central area of ​​the substrate.

3. The method according to claim 2, wherein in the pre-treatment, the amount of the processing gas supplied to the edge area of ​​the substrate per unit area of ​​the substrate is greater than the amount of the processing gas supplied to the central area of ​​the substrate per unit area of ​​the substrate.

4. The method according to claim 1 or 2, wherein in the liquid treatment, the treatment liquid is supplied onto the rotating substrate, and Wherein the processing liquid is supplied to a central area of ​​the substrate at a fixed position while the substrate is rotating. The method according to claim 1 , wherein the film is a natural oxide film. The method of claim 1 , wherein the process gas comprises atomic hydrogen. The method of claim 6 , wherein the process gas comprises hydrogen or ammonia. The method of claim 7 , wherein the treatment liquid comprises fluorine.

9. An apparatus for processing a substrate, the apparatus comprising: a plasma processing unit configured to process the surface of the substrate by supplying a processing gas in a plasma state; a liquid processing unit configured to remove a film from the substrate by supplying a processing liquid onto the substrate; a transfer unit configured to transfer the substrate between the plasma processing unit and the liquid processing unit; as well as a controller configured to control the plasma processing unit, the liquid processing unit and the conveying unit, The controller is configured as follows: When removing the film from the substrate, the plasma processing unit, the liquid processing unit, and the transfer unit are controlled so that the film of the substrate is surface-processed using the processing gas in the plasma state in the plasma processing unit, and after the substrate is transferred from the plasma processing unit to the liquid processing unit, the film is removed from the substrate using the processing liquid in the liquid processing unit, The surface treatment includes causing ions in the processing gas in a plasma state to collide with the film to weaken the binding energy of the film without etching the film.

10. The apparatus according to claim 9, wherein the plasma processing unit comprises: a processing chamber having a processing space therein; a supporting unit configured to support the substrate; a gas supply unit configured to supply the process gas into the process chamber; as well as A plasma source is configured to excite the process gas into the plasma state. 11 . The apparatus of claim 10 , wherein the gas supply unit is configured to adjust an amount of gas supplied to a central region of the substrate and an amount of gas supplied to an edge region of the substrate.

12. The device according to claim 10, wherein the gas supply unit further comprises: a showerhead configured to supply the process gas into the process chamber, and The nozzle comprises: a central area supply unit configured to spray the process gas to the central area of ​​the substrate; and An edge region supply unit is configured to spray the process gas to the edge region of the substrate.

13. The apparatus of claim 12, wherein the controller is configured to: The gas supply unit is controlled so that the amount of the process gas supplied through the edge region supply unit is greater than the amount of the process gas supplied through the central region supply unit.

14. The device according to any one of claims 9 to 13, wherein the liquid processing unit comprises: a cup-shaped member having the processing space therein; a supporting unit configured to support the substrate in the processing space and rotatably disposed; as well as A liquid supply unit is configured to supply the processing liquid to the substrate supported on the supporting unit.

15. The device according to claim 14, wherein the liquid supply unit comprises: a nozzle configured to supply the processing liquid onto the substrate, and Wherein, when the processing liquid is supplied to the substrate, the nozzle is arranged to be fixed at a position opposite to a central area of ​​the substrate.

16. The device according to any one of claims 9 to 13, wherein the membrane is a natural oxide membrane.

17. The apparatus of any one of claims 9 to 13, wherein the process gas comprises atomic hydrogen.

18. The apparatus of claim 17, wherein the process gas comprises hydrogen or ammonia, and Wherein the processing liquid comprises fluorine.

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