A coupled CVD reaction device for producing carbon nanotube films

By setting up multiple small reaction chambers and support tubes in the CVD reaction device, the problems of low output rate and poor resistance uniformity of carbon nanotube film are solved, and efficient production and product consistency are achieved.

CN112981363BActive Publication Date: 2025-08-26ZHONGWEI NANOMATERIAL TECH (ZHEJIANG) CO LTD
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Patent Information

Application Number
CN201911278328.9
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2019-12-13
Publication Date
2025-08-26
Estimated Expiration
2039-12-13

AI Technical Summary

Technical Problem

The existing CVD method has low output rate and poor resistance uniformity. Single-branch reaction tubes are susceptible to environmental disturbances and interruptions, affecting production efficiency and product consistency.

Method used

Using a grid CVD reaction device, multiple small reaction chambers are set up in the large reaction tube. Each reaction chamber is composed of small reaction tubes, and the gaps are filled with heat conduction and buffer materials. The support tube provides support, improving the number and stability of the reaction tubes.

Benefits of technology

It increases the output of carbon nanotubes, reduces energy waste, shortens collection time, enhances the resistance uniformity of carbon nanotube films, and reduces the impact of interruption due to single-branch reaction tubes.

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Abstract

The present invention provides a CVD reactor for producing carbon nanotube films with uniform resistance, specifically relating to the technical field of carbon nanotube film production devices. The reactor comprises a large reaction tube having a plurality of reaction chambers uniformly arranged circumferentially within its inner cavity, each of the reaction chambers being of identical shape and size. The present invention, on the one hand, increases the number of reaction chambers involved in producing carbon nanotube films within the CVD reactor, thereby increasing the carbon nanotube output per unit time and shortening the collection time of the carbon nanotube films, thereby effectively reducing energy waste. On the other hand, by increasing the number of carbon nanotube bundles, the impact of interruptions in individual carbon nanotube bundles on the resistance uniformity of the carbon nanotube films is effectively reduced.
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Description

Technical Field

[0001] The present invention belongs to the technical field of carbon nanotube film production equipment, and in particular relates to a coupled CVD reaction device for producing carbon nanotube films. Background Art

[0002] Carbon nanotube films have the characteristics of high specific strength, high electrical conductivity, high heat generation rate, and low density, and have important application prospects in the fields of aerospace, national defense and military, electrode materials, thermal insulation clothing, etc. The CVD method for preparing carbon nanotube films is simple to operate and low in cost, making it the first choice for industrial production of carbon nanotube films. At present, the CVD method for preparing carbon nanotube films can only be used with one reaction tube, resulting in a low output rate of carbon nanotube bundles in the CVD reaction device, which not only prolongs the collection time of carbon nanotubes, but also causes serious energy waste. In addition, when using a single reaction tube for production, if the carbon nanotube bundles in the reaction tube are interrupted due to a slight perturbation in the reaction system parameters, the carbon nanotube collection efficiency will be 0 for a period of time, seriously affecting the consistency of the performance of the carbon nanotube film.

[0003] Therefore, there is an urgent need for a coupled CVD reaction device for producing carbon nanotube films that can solve the existing problems. Summary of the Invention

[0004] The purpose of the present invention is to provide a coupled CVD reactor for producing carbon nanotube films, in which several reaction chambers are arranged in a large reaction tube to solve the problems of low yield of carbon nanotube bundles and poor resistance uniformity of carbon nanotube films in the CVD reactor.

[0005] The present invention provides the following technical solutions:

[0006] A parallel CVD reactor for producing carbon nanotube films comprises a large reaction tube with a plurality of reaction chambers uniformly arranged circumferentially within its inner cavity. Each reaction chamber has the same shape and size. By increasing the number of reaction chambers involved in producing carbon nanotube films within the CVD reactor, the carbon nanotube output per unit time is increased, the collection time of the carbon nanotube films is shortened, and energy waste is effectively reduced. Furthermore, by increasing the number of carbon nanotube bundles (one carbon nanotube bundle per reaction chamber), the effect of interruptions in individual carbon nanotube bundles on the resistance uniformity of the carbon nanotube films is effectively reduced.

[0007] Preferably, the reaction chamber is composed of small reaction tubes, with a support tube positioned within the large reaction tube. The axis of the large reaction tube coincides with the axis of the support tube, and all the small reaction tubes are tightly stacked around the support tube within the large reaction tube. The support tube provides support. Compared to fixed, non-detachable reaction chambers, the production cost of multiple small reaction tubes is lower. After a period of use at high temperatures, reaction tubes undergo certain changes, rendering them inoperable and requiring replacement with new ones. Using multiple small reaction tubes as multiple reaction chambers facilitates maintenance and replacement, saving costs.

[0008] Preferably, the gaps between adjacent small reaction tubes and the gaps between the small reaction tubes and the support tubes are filled with heat-conducting and buffering materials, so that the small reaction tubes can be more stably stacked in the large reaction tube.

[0009] Preferably, the heat conducting and buffering material is silicon carbide or aluminum oxide powder.

[0010] Preferably, the support tube is a solid filling tube. Because the temperature conditions at the center are different from those at the surrounding reaction tubes, it is not appropriate to place a small reaction tube there.

[0011] Preferably, the outer diameters of the small reaction tube and the support tube are the same, which facilitates installation.

[0012] Preferably, the number of the reaction chambers is 6-10.

[0013] The beneficial effects of the present invention are:

[0014] 1. By increasing the number of reaction tubes involved in the production of carbon nanotube films in the CVD reaction device, the output of carbon nanotubes per unit time can be increased, the collection time of carbon nanotube films can be shortened, and energy waste can be effectively reduced.

[0015] 2. By increasing the number of carbon nanotube bundles, the influence of the interruption of a single carbon nanotube bundle on the resistance uniformity of the carbon nanotube film can be effectively reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation of the present invention. In the accompanying drawings:

[0017] Figure 1 It is a longitudinal cross-sectional view of the present invention;

[0018] Figure 2 is a transverse cross-sectional view of the present invention;

[0019] Figure 3This is a graph of carbon nanotube collection efficiency when using a traditional single-tube reactor to produce carbon nanotube films;

[0020] Figure 4 This is a graph showing the collection efficiency of carbon nanotubes when the CVD reaction device of the present invention is used to produce a carbon nanotube film.

[0021] The markings in the figure are: 1. large reaction tube; 2. solid filling tube; 3. small reaction tube. DETAILED DESCRIPTION

[0022] like Figure 1-2 As shown, a parallel CVD reactor for producing carbon nanotube films comprises a large reaction tube 1, six small reaction tubes 3, and a support tube. The support tube is a solid filling tube 2. The six small reaction tubes 3 are all identical in shape and size, and the outer diameters of the small reaction tubes 3 and the solid filling tube 2 (i.e., the support tube) are the same, facilitating installation. The six small reaction tubes 3 are tightly packed around the solid filling tube 2 within the large reaction tube 1. Specifically, the six small reaction tubes 3 are circumferentially distributed within the lumen of the large reaction tube 1. The solid filling tube 2 is positioned within the lumen of the large reaction tube 1, with its axis coinciding with the axis of the large reaction tube 1. The tight stacking of the small reaction tubes 3 and the solid filling tube 2 fully utilizes the space within the lumen of the large reaction tube 1.

[0023] Specifically, the gaps between the small reaction tubes 3 and the gaps between the small reaction tubes 3 and the solid filling tube 2 are filled with suitable heat-conducting and buffering materials. The heat-conducting and buffering materials can be silicon carbide, aluminum oxide powder, etc.

[0024] In this embodiment, when used to produce carbon nanotube films, six small reaction tubes 3 are involved in the production, and the solid filling tube 2 in the middle serves as a support. Because the temperature conditions in the middle are different from those in the surrounding reaction tubes, it is not appropriate to install a small reaction tube 3 there.

[0025] like Figure 3 As shown, when a single reaction tube is used to produce a carbon nanotube film, when the carbon nanotube bundle in the reaction tube is interrupted due to environmental disturbances in the tube, the collection efficiency of the carbon nanotube bundle is always 0 during the interruption period, which seriously affects the consistency of the performance of the carbon nanotube film.

[0026] like Figure 4 As shown, when the CVD reaction apparatus of this embodiment is used to produce a carbon nanotube film, when the carbon nanotube bundle in a small reaction tube 3 is interrupted due to environmental disturbances within the tube, the collection efficiency of the carbon nanotube bundle can still be maintained at 83.3%, which can effectively alleviate the problem of uneven resistance of the carbon nanotube film caused by the interruption of the carbon nanotube bundle.

[0027] The above description is only a preferred specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any technician familiar with the technical field, within the technical scope disclosed by the present invention, who makes equivalent replacements or changes based on the technical solution and inventive concept of the present invention, should be covered by the scope of protection of the present invention.

Claims

1. A coupled CVD reactor for producing carbon nanotube films, characterized in that: The invention comprises a large reaction tube, wherein a plurality of reaction chambers are evenly arranged in the inner cavity of the large reaction tube in a circumferential direction, and each of the reaction chambers has the same shape and size; The reaction chamber is composed of small reaction tubes. A support tube is provided in the large reaction tube. The axis of the large reaction tube coincides with the axis of the support tube. All the small reaction tubes are tightly stacked around the support tube and arranged in the large reaction tube. The outer diameters of the small reaction tube and the support tube are the same; The gaps between the adjacent small reaction tubes and the gaps between the small reaction tubes and the support tubes are filled with heat-conducting and buffering materials; The support tube is a solid filling tube.

2. The coupled CVD reaction device for producing carbon nanotube films according to claim 1, characterized in that: The heat conducting and buffering material is silicon carbide or aluminum oxide powder.

3. The coupled CVD reaction device for producing carbon nanotube films according to claim 1, characterized in that: The number of the reaction chambers is 6-10.

Citation Information

Patent Citations

  • Producing device for carbon nano-tube

    CN201567235U

  • Row CVD reaction device for producing carbon nanotube film

    CN211367716U