Method for manufacturing electronic device

Abstract

The present invention provides a method for manufacturing an electronic device, the steps including providing a conductive carrier, on which at least one electronic component is arranged, picking up the at least one electronic component, at least in the step of picking up the electronic component, setting the conductive carrier to have a ground voltage, and transferring the electronic component to a target substrate.

Description

Technical Field

[0001] The invention relates to a method for manufacturing an electronic device, and in particular to a method for transferring microelectronic components of an electronic device. Background Art

[0002] With the evolution and development of science and technology, electronic devices have become indispensable items in daily life. Take displays or touch displays in electronic devices as an example. Displays and touch displays have the characteristics of thin and light appearance, low power consumption and low radiation pollution. Therefore, they have been widely used in various portable or wearable electronic products such as notebooks, smart phones, watches and car displays to provide more convenient information transmission and display.

[0003] Electronic components such as micro LEDs or sub-millimeter LEDs (mini LEDs) are display technologies that miniaturize and matrix traditional LED structures and drive and address each pixel individually. They have attracted widespread attention and are considered a new generation of display technology. How to efficiently and accurately transfer the above electronic devices to the target substrate is an active research topic in this field. Summary of the invention

[0004] One of the objectives of the present invention is to provide a method for manufacturing an electronic device, which can improve the efficiency and accuracy of transferring electronic components to a target substrate.

[0005] An embodiment of the present invention provides a method for manufacturing an electronic device, the steps including providing a conductive carrier, on which at least one electronic component is disposed, picking up the at least one electronic component, setting the conductive carrier to have a ground voltage at least in the step of picking up the electronic component, and transferring the electronic component to a target substrate.

[0006] Another embodiment of the present invention provides a method for manufacturing an electronic device, the steps including providing a conductive carrier having at least one electronic component disposed thereon, picking up the at least one electronic component, setting the conductive carrier to have a reference voltage, and transferring the electronic component to a target substrate.

[0007] The present invention removes the sacrificial layer after covering the electronic component with an insulating layer, and uses the insulating layer to place the electronic component on a conductive carrier, thereby reducing the risk of difficulty in picking up the electronic component due to the sacrificial layer's adhesion being greater than the electrostatic attraction between the transfer head and the electronic component. In addition, the present invention controls the charge of the electronic component through the conductive structure of the conductive carrier, thereby improving the efficiency and accuracy of the transfer. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] For ease of understanding, the same reference numerals are used to indicate the same elements shared by the figures where possible, and it is expected that the elements invented in one embodiment can be used in other embodiments without specific description. Unless otherwise specified, the drawings herein should not be understood as being drawn to scale, and for the sake of clear expression and explanation, the drawings are usually simplified and details or elements are omitted, and the drawings and detailed descriptions herein are used to explain the principles discussed below, and the same elements are represented by similar reference numerals.

[0009] Figure 1 The figure is a flowchart of a method for manufacturing an electronic device according to an embodiment of the present invention.

[0010] Figures 2 to 5 FIG. 4 is a cross-sectional view of a step of transferring an electronic component from a temporary substrate to a conductive carrier according to an embodiment of the present invention.

[0011] Figure 6 FIG. 4 is a cross-sectional diagram of the steps of picking up an electronic component from a conductive carrier according to an embodiment of the present invention.

[0012] Figure 7 FIG. 4 is a cross-sectional diagram of a step of transferring an electronic component to a target substrate according to an embodiment of the present invention.

[0013] Figure 8 A conductive carrier according to another embodiment of the present invention and a cross-sectional view of the steps of picking up electronic components from the conductive carrier are illustrated.

[0014] Fig. 9 A conductive carrier according to another embodiment of the present invention and a cross-sectional view of the steps of picking up electronic components from the conductive carrier are illustrated.

[0015] Fig.10 A conductive carrier according to another embodiment of the present invention and a cross-sectional view of the steps of picking up electronic components from the conductive carrier are illustrated.

[0016] Explanation of reference numerals: P1, P2, P3-pitch; 10-method; 100-temporary substrate; 100a-surface; 102-electronic component; 104-electrode; 108-sacrificial layer; 108a-sidewall; 110-insulating layer; 112-gap; 200-conductive carrier; 211-conductive structure; 211-1, 211-2, 211-3, 211-4-sub-conductive structure; 200a-upper surface; 200b-lower surface; 201, 201'-base layer; 202-conductive pad; 202-1, 202-2-sub-conductive pad; 204-connecting portion ; 206-conductive circuit; 208-pad layer; 209-intermediate insulating layer; 210-gap; 220-control circuit; 300-transfer element; 301, 301'-base layer; 302-1, 302-2, 302-3, 302-4-transfer head; 304-through hole; 306-conductive circuit; 309-intermediate insulating layer; 310-gap; 320-control circuit; 400-target substrate; 402-bonding pad; 102a-top surface; 102b-bottom surface; 12, 14, 16, 18, 20, 22, 24, 26, 28, 30-steps. DETAILED DESCRIPTION

[0017] The present invention may be understood by referring to the following detailed description in conjunction with the accompanying drawings. It should be noted that in order to facilitate the reader's understanding and the simplicity of the drawings, the various drawings in the present invention only depict a portion of the display device, and certain elements in the drawings are not drawn according to actual proportions. In addition, the number and size of each element in the drawings are for illustration only and are not intended to limit the scope of the present invention.

[0018] Certain words are used throughout the specification and claims of the present invention to refer to specific components. It should be understood by those skilled in the art that electronic equipment manufacturers may refer to the same components by different names. This document does not intend to distinguish between components that have the same function but different names. In the following specification and claims, the words "including", "comprising" and "having" are open-ended words and should therefore be interpreted as "including but not limited to..."

[0019] It should be understood that when an element or film layer is referred to as being "on another element or film layer" or "connected to another element or film layer", it can be directly on another element or film layer, or directly connected to another element or film layer, or other elements or film layers may exist between the two. Conversely, when an element is referred to as being "directly on another element or film layer" or "directly connected to another element or film layer", there are no intervening elements or film layers between the two.

[0020] Although terms such as "first", "second", "third", etc. may be used to describe or name different components, these components are not limited to these terms. These terms are only used to distinguish one component from other components in the specification, and have nothing to do with the order in which these components are manufactured. The same terms may not be used in the claims, and may be replaced by "first", "second", "third", etc. according to the order in which the elements are declared in the claims. Accordingly, in the following description, the first component may be the second component in the claims.

[0021] Please refer to Figure 1 and Figures 2 to 7 . Figure 1 FIG. 1 is a flow chart of steps of a method 10 for manufacturing an electronic device according to an embodiment of the present invention. Figures 2 to 5 Can be matched to Figure 1 Steps 14 to 26 are schematic cross-sectional views of the steps of transferring at least one electronic component from a first substrate (e.g., a temporary substrate) to a second substrate (e.g., a conductive carrier) to provide a second substrate (e.g., a conductive carrier) having at least one electronic component disposed thereon according to an embodiment of the present invention. Figure 6 Can be matched to Figure 1 Step 28 is a cross-sectional view illustrating the step of picking up at least one electronic component from the second substrate (eg, a conductive carrier) according to an embodiment of the present invention. Figure 7 Can be matched to Figure 1 Step 30 is a schematic cross-sectional view of a step of transferring at least one electronic component to a third substrate (eg, a target substrate) according to an embodiment of the present invention. It should be understood that the method for manufacturing an electronic device of the present invention is not limited to Figure 1 In the steps of the method 10 shown, additional steps may be performed before, after, or between any of the steps shown in the method 10. In addition, some steps may be performed simultaneously or in a sequential manner. Figure 1 The different orders are shown in .

[0022] Please refer to Figure 1 and Figure 2 The method for manufacturing an electronic device of the present invention includes providing a conductive carrier, on which at least one electronic component is disposed. The step of providing the conductive carrier is, for example, firstly performed in step 14, providing a temporary substrate 100, on which at least one electronic component 102 is disposed on a surface 100a of the temporary substrate 100. Then, performed in step 16, a sacrificial layer 108 is disposed on the temporary substrate 100 to cover the at least one electronic component 102. Figure 2 In the illustrated embodiment, a plurality of electronic components 102 may be disposed on the temporary substrate 100 , and the electronic components 102 may be arranged in an array with equal or non-equal spacing. The sacrificial layer 108 may cover the electronic components 102 and / or cover the gaps between adjacent electronic components 102 .

[0023] The temporary substrate 100 is, for example, a semiconductor epitaxial substrate for manufacturing the electronic component 102 thereon, such as a silicon substrate, a III-V substrate, a sapphire substrate or a suitable substrate thereof, but not limited thereto. The electronic component 102 may be a semiconductor component, such as a light emitting diode (LED), and the light emitting diode LED may include a micro light emitting diode (micro LED), a sub-millimeter light emitting diode (mini LED), a quantum dot light emitting diode (quantum LED), a nanowire light emitting diode (nano wire LED), a bar type LED, an organic light emitting diode (OLED), a quantum dot light emitting diode (QD-LED) or a combination thereof, but not limited thereto. Figure 2 As shown, the electronic component 102 may have a top surface 102a and a bottom surface 102b opposite to each other, wherein the top surface 102a is close to the surface 100a of the temporary substrate 100, and the bottom surface 102b is far away from the surface 100a of the temporary substrate 100. The bottom surface 102b is provided with an electrode 104 for electrical connection with an external circuit.

[0024] The sacrificial layer 108 can be used to fix the electronic component 102 on the temporary substrate 100. The material of the sacrificial layer 108 is, for example, a patternable photoresist or adhesive, or other suitable materials. In the present embodiment, after the sacrificial layer 108 is coated on the temporary substrate 100 and cured, an etching back process can be performed to remove a portion of the sacrificial layer 108 to expose the electrode 104 of the electronic component 102, but the present invention is not limited thereto.

[0025] Please refer to Figure 1 and Figure 3 Then, step 18 is performed to orient the surface 100a of the temporary substrate 100 in a vertical direction (e.g., Z direction), that is, to arrange the surface 100a of the temporary substrate 100 close to the upper surface 200a of a conductive carrier 200, so that the sacrificial layer 108 is arranged on the conductive carrier 200 so as to be attached to the conductive carrier 200. The sacrificial layer 108 can be adhered to the conductive carrier 200 by thermal compression bonding, or a glue layer can be arranged to adhere the sacrificial layer 108 and the conductive carrier 200, but the invention is not limited thereto.

[0026] The base layer 201 of the conductive carrier 200 may include a semiconductor material layer, such as a silicon layer, a silicon-on-insulator (SOI) layer, or other suitable semiconductor material layer, but not limited thereto. The conductive carrier 200 may include a single-layer or multi-layer structure, and may be provided with a conductive structure, such as a conductive structure formed by a semiconductor process such as a thin film deposition process, a patterning process, an etching process, an implantation process, etc., but not limited thereto. In some embodiments, the conductive carrier 200 may include other structures formed therein or on its surface, such as a transistor, a metallization structure, an integrated circuit, a passivation layer, a packaging layer, an insulating layer, etc., but not limited thereto.

[0027] The conductive carrier 200 may include at least one conductive structure 211, and the conductive structure 211 may include a plurality of conductive pads 202 disposed on the upper surface 200a of the conductive carrier 200, a conductive circuit 206 disposed on the lower surface 200b, and a connecting portion 204 electrically connecting the conductive pads 202 and the conductive circuit 206, wherein the connecting portion 204 is disposed in a through hole 207 penetrating the conductive carrier 200. The conductive pad 202 and the conductive circuit 206 and the connecting portion 204 electrically connected thereto may be regarded as a sub-conductive structure, such as sub-conductive structures 211-1, 211-2, 211-3, and 211-4, each of which may be an independent circuit, or may be designed such that a plurality of sub-conductive structures are electrically connected to each other to form a group of combined circuits. Furthermore, the sub-conductive structures in the same group of combined circuits may be disposed adjacent to each other or spaced apart from each other, and the present invention is not limited to the above design. The material of the conductive structure 211 may include metal materials or other suitable conductive materials, such as copper (Cu), aluminum (Al), tungsten (W), titanium (Ti), platinum (Pt), nickel (Ni) and other metal materials or their alloys, but is not limited thereto.

[0028] In some embodiments, step 18 may include electrically connecting the electronic component 102 to the conductive carrier 200, for example, disposing the electrode 104 of the electronic component 102 on the conductive pad 202 of the corresponding conductive structure 211 and electrically connecting the electrode 104 and the conductive pad 202. According to one embodiment of the present invention, the electronic component 102 may be disposed on the conductive carrier 200 by forming a metal-metal bond between the electrode 104 and the corresponding conductive pad 202 using thermocompression bonding. In other embodiments, a conductive adhesive such as anisotropic conductive film (ACF) (not shown) may also be used to bond the electrode 104 and the conductive pad 202, but is not limited thereto.

[0029] It should be noted that the structures and configurations of the conductive pad 202, conductive circuit 206, and connecting portion 204 shown in the figure are examples for the purpose of drawing and explanation. The conductive pad 202, conductive circuit 206, and connecting portion 204 can be configured according to design requirements. For example, the conductive pad 202 can be patterned according to design requirements to match the electrode 104 of the electronic component 102. For example, in this embodiment, the electrode 104 of the electronic component 102 is disposed on the same conductive pad 202. In other embodiments (such as Figure 8 or Fig.10 ), the conductive pad 202 corresponding to the same electronic component 102 can be patterned into multiple blocks, so that the electrodes 104 of the electronic component 102 are respectively disposed on the conductive pads 202 in different blocks.

[0030] Please refer to Figure 1 and Figure 4 Then, step 20 is performed to remove the temporary substrate 100 to expose the top surface 102a of the electronic component 102, and then step 22 is performed to remove part of the sacrificial layer 108 so that the sacrificial layer 108 adjacent to the electronic component 102 surrounds the electronic component 102. Part of the conductive carrier 200 can be exposed from between the sacrificial layers 108 surrounding the electronic component 102. The method of removing part of the sacrificial layer 108 is, for example, to perform a patterning process on the sacrificial layer 108, such as an exposure-development process or a lithography-etching process, to remove part of the sacrificial layer 108 and retain the sacrificial layer 108 adjacent to the electronic component 102. Figure 4 In the illustrated embodiment, the sacrificial layer 108 adjacent to the electronic component 102 surrounds the electronic component 102 (for example, in a plane formed by the XY directions, with the electronic component 102 as the center, and surrounding the electronic component 102), and may expose a portion of the upper surface 200a of the conductive carrier 200. Figure 4 As shown, the sidewall 108a of the sacrificial layer 108 adjacent to the electronic element 102 may have an angle with the upper surface 200a of the conductive carrier 200 to form an inclined plane, or may be perpendicular to the upper surface 200a. In other embodiments, the sidewall 108a may also be curved, but is not limited thereto. After the sacrificial layer 108 is patterned, a portion of the conductive pad 202 may be exposed and contact the insulating layer 110 that is subsequently disposed. In other embodiments, after the sacrificial layer 108 is patterned, the conductive pad 202 may be completely covered by the adjacent sacrificial layer 108.

[0031] Please continue to refer to Figure 1 and Figure 4. Next, step 24 is performed to form an insulating layer 110 to cover the top surface 102a of the electronic component 102 and the sacrificial layer 108 adjacent to the electronic component 102. The insulating layer 110 may cover and / or directly contact the top surface 102a of the electronic component, the sacrificial layer 108 around the electronic component 102, and the exposed portion of the upper surface 200a of the conductive carrier 200. The insulating layer 110 may be made of a dielectric material, which may include silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon carbonitride, or a high dielectric constant (high-k) dielectric material, but is not limited thereto. The insulating layer 110 may be formed by processes such as chemical vapor deposition (CVD), physical vapor deposition (PVD), or atomic layer deposition (ALD), but is not limited thereto.

[0032] Please refer to Figure 1 and Figure 5 , then proceed to step 26, removing the sacrificial layer 108 to provide a gap 112 between the insulating layer 110 and the conductive carrier 200, that is, the electronic component 102 is disposed in the gap 112. The method for removing the sacrificial layer 108 in step 26 may be, for example: first patterning the insulating layer 110 by an etching process or other suitable process to form an opening (not shown) in the insulating layer 110, and then performing a wet etching process or other suitable process through the opening to remove the sacrificial layer 108. After removing the sacrificial layer 108, the electronic component 102 may be fixed on the conductive carrier 200 by the insulating layer 110 disposed on the top surface 102a thereof. In some embodiments, the step of patterning the insulating layer 110 may not remove the insulating layer 110 between the electronic components 102.

[0033] Please refer to Figure 1 and Figure 6 , then proceed to step 28, picking up the electronic component 102 from the conductive carrier 200, wherein at least in the step of picking up the electronic component 102, the conductive carrier 200 is set to have a voltage, such as a reference voltage. The electronic component 102 can be picked up using a transfer element 300. The transfer element 300 may include a plurality of conductive transfer heads 302-1, 302-2, 302-3, 302-4, and may optionally include a conductive circuit 306 and a connecting circuit located in a through hole 304, for selectively providing a voltage to each transfer head 302-1, 302-2, 302-3, 302-4. The transfer element 300 may be electrically connected to at least one control circuit 320, and the voltage provided to each transfer head 302-1, 302-2, 302-3, 302-4 may be controlled respectively through the conductive circuit 306. For example, Figure 6As shown, when picking up the electronic component 102, the control circuit 320 can provide a pull-in voltage to the transfer heads 302-2 and 302-4 that are scheduled to pick up the electronic component 102, so that they generate electrostatic attraction with the corresponding electronic component 102 to pick up the electronic component 102, thereby achieving the purpose of selectively picking up the electronic component 102. The conductive circuits 306 of each transfer head 302-1, 302-2, 302-3, and 302-4 can be independent circuits, or they can be designed so that multiple transfer heads are electrically connected to each other to form a group of transfer heads. Furthermore, the same group of transfer heads can be arranged adjacent to each other or spaced apart, and the present invention is not limited to the above design.

[0034] According to some embodiments, the transfer element 300 may include an elastic mechanism design, for example, an intermediate insulating layer 309 is sandwiched between two substrate layers 301, 301', and a gap 310 may be provided between the substrate layers 301, 301' and the intermediate insulating layer 309. The gap 310 may be formed by removing part of the intermediate insulating layer 309, but is not limited thereto. The materials of the substrate layers 301, 301' and the intermediate insulating layer 309 may include semiconductor materials such as silicon and silicon oxide, but are not limited thereto. The substrate layer 301' may be selected from elastic materials, or its thickness may be adjusted to give it an elastic function, but is not limited thereto. In the present embodiment, the substrate layers 301, 301' may be silicon layers. The above structure can provide elastic displacement of the transfer heads 302-1, 302-2, 302-3, and 302-4 in the vertical direction, which can compensate for the ups and downs caused by the warpage of the conductive carrier 200 and / or the transfer element 300, and / or the thickness variation of the electronic component 102, and can improve the accuracy of the transfer heads 302-1, 302-2, 302-3, and 302-4 in picking up the electronic component 102.

[0035] The "reference voltage" may be an AC voltage or a DC voltage, and is mainly used to electrically connect the conductive carrier 200 to a base potential or reference potential of a circuit. In other words, it represents an electrical connection to an endless charge source or charge absorption sink, which can provide or absorb charges without limit. In this embodiment, the reference voltage may be less than the pickup voltage, so that the potential of the conductive carrier 200 is less than the potential of the transfer element 300. In some embodiments, the AC voltage may be, for example, a ground voltage, which may be between 10E-12 and 10E-5 volts (V), 10E-6 and 10E-5 volts (V), or 10E-12 and 10E-6 volts (V). In some embodiments, the DC voltage may be, for example, close to 0 volts, and may be adjusted according to actual needs.

[0036] In detail, the process of step 28 includes placing the transfer heads 302-1, 302-2, 302-3, and 302-4 above the corresponding electronic components 102, and then moving the transfer component 300 (and / or moving the conductive carrier 200) so that the transfer heads 302-1, 302-2, 302-3, and 302-4 are close to and / or directly contact the insulating layer 110. At least during this process, the control circuit 320 provides a pull-in voltage to the transfer heads 302-2 and 302-4 that are scheduled to perform the pull-in action, and sets the conductive carrier 200 to have a reference voltage (such as a ground voltage) so that the electric field generated by the pull-in voltage can polarize the insulating layer 110, and accumulate induced charges opposite to the pull-in voltage on the top surface 102a of the electronic component 102, and the charges in the conductive carrier 200 and / or the electronic component 102 can be turned on. For example, when the pickup voltage is a positive voltage, an induced negative charge will be accumulated on the top surface 102a of the electronic component 102; when the pickup voltage is a negative voltage, an induced positive charge will be accumulated near the top surface 102a of the electronic component 102. Through the above mechanism, an electrostatic attractive force can be generated between the transfer heads 302-2, 302-4 and the corresponding electronic components 102 to adsorb the electronic components 102 on the transfer heads 302-2, 302-4. When the transfer element 300 is away from the conductive carrier 200, the adsorbed electronic component 102 can be separated from the conductive carrier 200. In some embodiments, the conductive carrier 200 can be selectively heated or the electronic component 102 can be heated from the transfer head 302 during the above process of picking up the electronic component 102 to help the electrode 104 separate from the conductive carrier 200.

[0037] In the process of step 28, the timing of the control circuit 320 providing the pickup voltage to the transfer heads 302-2 and 302-4 that are scheduled to pick up the electronic component 102 can be selected before the transfer heads 302-1, 302-2, 302-3, and 302-4 contact the insulating layer 110, after the transfer heads 302-3 and 302-4 contact the insulating layer 110, or when the transfer heads 302-1, 302-2, 302-3, and 302-4 contact the insulating layer 110, but is not limited thereto. The timing of setting the conductive carrier 200 to have a reference voltage can be at the same time or before the control circuit 320 provides the pickup voltage, or at least when the transfer heads 302-2 and 302-4 pick up the electronic component 102, but is not limited thereto.

[0038] exist Figure 6 In the embodiment shown, when the electronic component 102 is separated from the conductive carrier 200, the insulating layer 110 fixing the electronic component 102 is pulled off, so that part of the insulating layer 110b remains on the conductive carrier 200, and part of the insulating layer 110 (110a) moves with the electronic component 102. The thickness of the insulating layer 110 can be adjusted according to actual needs, for example, between a few angstroms. To 100 nanometers (nm), but not limited thereto. It should be noted that the position of the break of the insulating layer 110 is not limited to Figure 6 The portion shown near the conductive carrier 200 may be any other portion of the insulating layer 110. In addition, when picking up different electronic components 102, the positions where the insulating layer 110 is broken may be different. In some embodiments, the insulating layer 110 may not be broken, but may be completely peeled off from 200.

[0039] Please refer to Figure 1 and Figure 7 , then proceed to step 30, transferring the electronic component 102 to a target substrate 400. In some embodiments, the electrode 104 of the electronic component 102 can be disposed on a bonding pad 402 on the target substrate 400. The material of the bonding pad 402 can include a metal material or other suitable conductive material, such as copper (Cu), aluminum (Al), tungsten (W), titanium (Ti), platinum (Pt), nickel (Ni) and other metal materials or alloys thereof, but is not limited thereto. Subsequently, the insulating layer 110 can be selectively removed.

[0040] The target substrate 400 may be any suitable substrate having a control circuit, and the substrate may have a driving circuit board, such as a flexible printed circuit board (FPC) or a printed circuit board (PCB), etc., but is not limited thereto. In some embodiments, the target substrate 400 may include a thin film transistor, such as a top gate, a bottom gate, a dual gate thin film transistor, or a combination thereof, but is not limited thereto. The target substrate 400 may be used for electronic components, such as display devices including liquid crystal (LC), organic light-emitting diodes (OLED), quantum dots (quantum dots), fluorescent materials (fluorescent material), phosphor materials (phosphor material), light-emitting diodes (light-emitting diode.LED), sub-millimeter light-emitting diodes (mini LED), micro light-emitting diodes (micro LED) or other display media, but is not limited thereto. In order to simplify the illustration, Figure 7 Only the bonding pads 402 on the target substrate 400 for disposing the electronic components 102 are shown.

[0041] In some embodiments, thermocompression bonding may be used to form a metal-metal bond between the electrode 104 and the corresponding bonding pad 402 to place the electronic component 102 on the target substrate 400. In other embodiments, conductive adhesive such as anisotropic conductive film (ACF) (not shown) may also be used to bond the electrode 104 and the conductive pad 202, but is not limited thereto.

[0042] It should be noted that Figures 2 to 7 The electronic components 102 are arranged on the conductive carrier 200 at a spacing P1 (eg Figure 3 ), the spacing P2 between the transfer heads 302-1, 302-2, 302-3, and 302-4 (e.g. Figure 6 ), the pitch P3 of the bonding pads 402 (such as Figure 7 ), the number and spacing of the electronic components 102 picked up in each batch, and the position of the electronic components 102 set to the target substrate 400, etc., are all for the purpose of convenience of explanation and drawing, and the present invention is not limited to this. For example, the pitch P2 of the transfer heads 302-1, 302-2, 302-3, and 302-4 can be equal to the pitch P1 of the electronic components 102, or greater than the pitch P1 of the electronic components 102, for example, an integer multiple of the pitch P1 of the electronic components 102. The pitch P3 of the bonding pads 402 may not be equal to the pitch P1 of the electronic components 102 set on the conductive carrier 200. The pitch P3 of the bonding pads 402 may be greater than, less than, or equal to the pitch P2 of the transfer heads 302-1, 302-2, 302-3, and 302-4. The "pitch" of the present invention above refers to the spacing of the same sides of adjacent components.

[0043] The following will be described with respect to different embodiments of the present invention, and for the sake of simplicity, the following description will mainly describe in detail the different parts of each embodiment, and will not repeat the same parts. In addition, the same elements in each embodiment of the present invention are marked with the same reference numerals to facilitate comparison between the embodiments.

[0044] Please refer to Figure 8 , depicts a conductive carrier according to another embodiment of the present invention, and the steps of picking up electronic components from the conductive carrier. Figures 1 to 6 The difference between the embodiments shown is that Figure 8 The conductive pads 202 of the sub-conductive structures corresponding to the same electronic component 102 can be divided into sub-conductive pads 202-1 and sub-conductive pads 202-2, which correspond to one electrode 104 and another electrode of the electronic component 102, respectively. In addition, a pad layer 208 can be disposed on the sub-conductive pads 202-1 and 202-2 to electrically insulate the electronic component 102 from the conductive carrier 200, that is, to electrically insulate the sub-conductive pads 202-1 and 202-2. In some embodiments, the pad layer 208 material can include an insulating material, which can be the same as the insulating layer 110. In addition, the conductive carrier 200 is also electrically connected to a control circuit 220, and the control circuit 220 can selectively provide equal or unequal voltages to each sub-conductive structure.

[0045] In this embodiment, before the electronic component 102 is picked up from the conductive carrier 200 in step 28, the control circuit 220 may set the conductive carrier 200 to have a first voltage, for example, providing an adsorption voltage to each conductive pad 202, and then the electric field generated by the adsorption voltage may polarize the pad layer 208, and accumulate induced charges opposite to the adsorption voltage at the electrode 104 of the electronic component 102. Through the above mechanism, an electrostatic attraction force may be generated between the conductive pad 202 and the electrode 104, adsorbing the electronic component 102 on the conductive carrier 200, and preventing the electronic component 102 from being displaced before being picked up.

[0046] Please continue to refer to Figure 8 When the electronic component 102 is picked up, at least when the transfer heads 302-1, 302-2, 302-3, 302-4 contact the insulating layer 110, the control circuit 220 may set the conductive carrier 200 to have a voltage, for example, provide a reference voltage (such as an AC voltage or a DC voltage) to the sub-conductive pads 202-1, 202-2 of each sub-conductive structure to eliminate the electrostatic attraction or residual induced charge between the electronic component 102 and the sub-conductive pads 202-1, 202-2, and maintain the conductive carrier 200 at the potential of different transfer elements 300, for example, the potential of the conductive carrier 200 is lower than the potential of the transfer element 300, so that when the electronic component 102 is picked up from the conductive carrier 200 in step 28, the transfer heads 302-2, 302-4 can smoothly pick up the electronic component 102. In this embodiment, the control circuit 220 of the conductive carrier 200 can selectively release the electronic component 102 to be picked up. According to some embodiments of the present invention, the aforementioned reference voltage is not equal to the first voltage, or the reference voltage may be smaller than the first voltage.

[0047] After the electronic component 102 is picked up from the conductive carrier 200 in step 28, the control circuit 220 may set the conductive carrier 200 to have a second voltage, for example, to provide another adsorption voltage to the conductive pad 202 to adsorb the remaining electronic components 102 that have not been picked up. The first voltage and the second voltage may be substantially equal, but not limited to this. The first voltage and the second voltage are not equal to the aforementioned reference voltage. For example, the first voltage and the second voltage may be greater than the reference voltage.

[0048] The present invention can achieve the purpose of selecting the electronic component 102 to be picked up by adjusting the voltage provided to each transfer head 302-1, 302-2, 302-3, 302-4 through the control circuit 320 and / or adjusting the voltage provided to each sub-conductive structure 211-1, 211-2, 211-3, 211-4 through the control circuit 220. For example, please continue to refer to Figure 8, while or before the control circuit 320 provides the pickup voltage, or at least when the transfer heads 302-2 and 302-4 pick up the electronic component 102, the control circuit 220 can selectively provide the reference voltage to the sub-conductive pads 202-1, 202-2 of the sub-conductive structures 211-2 and 211-4, but not to the sub-conductive pads 202-1, 202-2 of the sub-conductive structures 211-1 and 211-1.

[0049] Please refer to Fig. 9 , depicts a conductive carrier according to another embodiment of the present invention, and the steps of picking up electronic components from the conductive carrier. Figures 1 to 6 The difference between the embodiments shown is that Fig. 9 The conductive carrier 200 shown may include an elastic mechanism design, for example, an intermediate insulating layer 209 is sandwiched between two base layers 201 and 201', and a gap 210 may be provided between the base layers 201 and 201'. The gap 210 may be formed by removing part of the intermediate insulating layer 209, but is not limited thereto. The materials of the base layers 201, 201' and the intermediate insulating layer 209 may include semiconductor materials, such as silicon and silicon oxide, but are not limited thereto. The intermediate insulating layer 209 may be made of an elastic material, or its thickness may be adjusted to give it an elastic function, but is not limited thereto. In the present embodiment, the base layers 201 and 201' may be silicon layers.

[0050] Please refer to Fig.10 , depicts a conductive carrier according to yet another embodiment of the present invention, and the steps of picking up electronic components from the conductive carrier. Figures 1 to 6 The difference between the embodiments shown is that Fig.10 Each sub-conductive structure of the conductive carrier 200 can also be electrically connected to different control circuits 220 respectively, and have the following configurations: Fig. 9 In addition, this embodiment may include the following: Figure 8 The liner layer 208 shown electrically insulates the electronic component 102 from the sub-conductive pad 202, that is, electrically insulated from the conductive carrier 200, and adsorbs the electronic component 102 onto the conductive carrier 200 by the mechanism described above.

[0051] Fig. 9 and Fig.10 The implementation force has an elastic mechanism design, which can provide elastic displacement of the conductive pad 202 and / or the electronic component 102 disposed on the conductive pad 202 in the vertical direction, and can compensate for the ups and downs caused by the warpage of the conductive carrier 200 and / or the transfer element 300, and / or the thickness variation between the electronic components 102, and can improve the accuracy of the transfer heads 302-1, 302-2, 302-3, and 302-4 in picking up the electronic component 102.

[0052] In summary, the present invention uses the insulating layer 110 to fix the electronic component 102 on the conductive carrier 200, which can reduce the position deviation of the electronic component 102 during the transfer process, and can also reduce the risk of difficulty in picking up the electronic component 102 due to the adhesion of the sacrificial layer 108 being greater than the electrostatic attraction between the transfer head 302 and the electronic component 102. On the other hand, the present invention can selectively set the conductive carrier 200 to have a reference voltage to remove the residual charge of the electronic component 102 so that the transfer head 302 can use the electrostatic attraction to absorb the electronic component 102 for transfer, which can improve the efficiency and yield of the transfer. In addition, when the insulating layer 208 is provided between the electronic component 102 and the conductive carrier 200, the control circuit 220 can provide the conductive carrier 200 with an adsorption voltage to generate an electrostatic attraction to the electronic component 102, so as to help the electronic component 102 be fixed on the conductive carrier 200 before being picked up, and the conductive carrier 200 can be set to have a reference voltage to release the electronic component 102 when picking up the electronic component 102.

[0053] The above description is only an embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may be subject to various modifications and variations. It should be noted that, without departing from the spirit of the present invention, the features in several different embodiments may be replaced, reorganized, or mixed to complete other embodiments. Any modification, equivalent substitution, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A method for manufacturing an electronic device, characterized in that: The following steps are involved: Providing a conductive carrier, on which at least one electronic component is disposed; Disposing a sacrificial layer to cover the at least one electronic component; removing a portion of the sacrificial layer so that the sacrificial layer adjacent to the at least one electronic component surrounds the at least one electronic component; Disposing an insulating layer covering and directly contacting a top surface of the at least one electronic component and the sacrificial layer adjacent to the at least one electronic component; removing the sacrificial layer adjacent to the at least one electronic component to form a gap; The transfer head contacts the insulating layer on the top surface of the at least one electronic component to pick up the at least one electronic component; At least in the step of picking up the at least one electronic component, setting the conductive carrier to have a ground voltage; and The at least one electronic component is transferred to a target substrate.

2. The method for manufacturing an electronic device according to claim 1, wherein: The at least one electronic component is electrically connected to the conductive carrier.

3. The method for manufacturing an electronic device according to claim 1, wherein: The at least one electronic component is electrically insulated from the conductive carrier.

4. The method for manufacturing an electronic device according to claim 3, wherein: The method further includes setting the conductive carrier to have a first voltage before the step of picking up the at least one electronic component, wherein the first voltage is not equal to the ground voltage.

5. The method for manufacturing an electronic device according to claim 3, wherein: The method further includes setting the conductive carrier to have a second voltage after the step of picking up the at least one electronic component, wherein the second voltage is not equal to the ground voltage.

6. The method for manufacturing an electronic device according to claim 1, wherein: The at least one electronic component is picked up by an electrostatic attraction.

7. The method for manufacturing an electronic device according to claim 1, wherein: The conductive carrier includes two base layers and an intermediate insulating layer arranged between the two base layers.

8. The method for manufacturing an electronic device according to claim 7, wherein: Part of the intermediate insulating layer is removed.

9. A method for manufacturing an electronic device, characterized in that: The following steps are involved: Providing a conductive carrier, on which at least one electronic component is disposed; Disposing a sacrificial layer to cover the at least one electronic component; removing a portion of the sacrificial layer so that the sacrificial layer adjacent to the at least one electronic component surrounds the at least one electronic component; Disposing an insulating layer covering and directly contacting a top surface of the at least one electronic component and the sacrificial layer adjacent to the at least one electronic component; removing the sacrificial layer adjacent to the at least one electronic component to form a gap; The transfer head contacts the insulating layer on the top surface of the at least one electronic component and sets the conductive carrier to have a reference voltage to pick up the at least one electronic component; as well as The at least one electronic component is transferred to a target substrate.

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