Silicon wafer etching equipment

Abstract

The present invention relates to the technical field of silicon wafer production equipment, and in particular to a silicon wafer etching device, comprising a spray device for spraying a medium on a single side of a silicon wafer, a supporting mechanism for supporting the silicon wafer, and a first limiting mechanism for limiting the displacement range of the silicon wafer, wherein the supporting mechanism is located between the spray mechanism and the first limiting mechanism. When the silicon wafer is placed on the supporting mechanism, a gap is provided between the silicon wafer and the first limiting mechanism. When the spray device sprays the medium on a single side of the silicon wafer, during use, the silicon wafer is placed on the supporting mechanism for support, while the spray mechanism sprays the medium on a single side of the silicon wafer. Under the action of the medium, the silicon wafer is suspended and contacts the limiting mechanism. The limiting mechanism limits the displacement range of the silicon wafer between the supporting mechanism and the limiting mechanism. By changing from the original immersion to spraying, the silicon wafer will not flip over to the other side of the silicon wafer due to medium fluctuations, thereby ensuring stable and reliable silicon wafer production.

Description

Technical Field

[0001] The present invention relates to the technical field of silicon wafer production equipment, and in particular to a silicon wafer etching device. Background Art

[0002] A process that removes the thin film layer not masked by the resist, thereby creating a pattern on the thin film that is identical to the pattern on the resist film. In the integrated circuit manufacturing process, the desired pattern is copied onto the resist film through mask registration, exposure, and development, or directly drawn onto the resist film using an electron beam. This pattern is then precisely transferred to the dielectric film (such as silicon oxide, silicon nitride, polysilicon) or metal film (such as aluminum and its alloys) beneath the resist to produce the desired thin layer pattern. Etching techniques are mainly divided into dry etching and wet etching. Wet etching mainly uses chemical reagents to react with the etched material to cause etching.

[0003] In the traditional silicon wafer production process, single-sided etching is required using a reagent solution in an etching tank. However, the reagent solution will fluctuate when the conveyor wheel transports the silicon wafer, and the fluctuating reagent solution can easily swirl to the other side, causing the silicon wafer to be contacted and etched by the reagent solution. In severe cases, the silicon wafer may be scrapped, increasing production costs and reducing work efficiency. Summary of the Invention

[0004] The technical problem to be solved by the present invention is: in order to solve the problem that in the traditional silicon wafer production process, single-sided etching needs to be performed by solution in the etching tank, and the solution will fluctuate during the transportation of the silicon wafer by the conveyor wheel, and the fluctuating solution will easily churn to the other side, thus causing the silicon wafer to be contacted and etched by the solution. In severe cases, the silicon wafer may be scrapped, which increases production costs and reduces work efficiency. A silicon wafer etching device is now provided.

[0005] The technical solution adopted by the present invention to solve its technical problems is: a silicon wafer etching device, including a spray device for spraying a medium on a single side of a silicon wafer, a supporting mechanism for supporting the silicon wafer, and a first limiting mechanism for limiting the displacement range of the silicon wafer. The supporting mechanism is located between the spray mechanism and the first limiting mechanism. When the silicon wafer is placed on the supporting mechanism, there is a gap between the silicon wafer and the first limiting mechanism. When the spray device sprays the medium on a single side of the silicon wafer, the silicon wafer is suspended and detached from the supporting mechanism under the action of the medium. At the same time, the silicon wafer contacts the first limiting mechanism and limits the displacement of the silicon wafer.

[0006] The present invention supports the silicon wafer by placing it on a support mechanism, and spraying the medium on one side of the silicon wafer by a spraying mechanism. Under the force of the medium, the silicon wafer is suspended and contacts the limiting mechanism. The limiting mechanism limits the displacement range of the silicon wafer between the support mechanism and the limiting mechanism. By changing the original immersion to spraying, the silicon wafer will not flip over to the other side of the silicon wafer due to medium fluctuations, thereby ensuring stable and reliable silicon wafer production.

[0007] In order to facilitate the recovery of the medium, the device further comprises a tank body, and the spray device, the support mechanism and the limit mechanism are all arranged on the tank body. By arranging the spray device, the support mechanism and the limit mechanism on the tank body, it is convenient for the medium to be recovered through the tank body.

[0008] In order to better recycle the medium, the tank body further includes an upper tank and a lower tank, the upper tank is arranged above the lower tank, and the upper and lower tanks are connected to each other. By dividing the tank body into the upper tank and the lower tank, and the upper tank is located above the lower tank and connected to each other, the medium is retained in the upper tank and transferred to the lower tank, and the medium is recycled by the spray mechanism.

[0009] In order to prevent the medium from splashing out of the tank body, a cover plate is further provided on the tank body. By providing the cover plate on the tank body, the medium is effectively prevented from splashing out of the tank body.

[0010] In order to realize the first limiting mechanism, further, the first limiting mechanism includes a core shaft arranged above the silicon wafer. By arranging the core shaft above the silicon wafer, the displacement range of the silicon wafer is limited.

[0011] To prevent the silicon wafer from being broken by excessive force from the spraying medium, the first limiting mechanism further includes a floating pressure wheel. The floating pressure wheel is provided with a mounting hole having a diameter larger than the diameter of the mandrel, through which the mandrel passes. By floating the floating pressure wheel on the mandrel, the pressure wheel provides a certain cushioning effect on the silicon wafer, preventing the silicon wafer from being broken by excessive force when it contacts the limiting mechanism.

[0012] To better cushion the silicon wafer, the floating pressure wheel is in contact with the silicon wafer when the silicon wafer is placed on the support mechanism. This provides cushioning when the medium is sprayed on one side of the silicon wafer, ensuring that the silicon wafer is not subjected to excessive impact during contact.

[0013] In order to realize the support mechanism, further, the support mechanism includes a plurality of ejector pins arranged above the spray device. By arranging a plurality of ejector pins above the spray device, the support mechanism can support the silicon wafer.

[0014] In order to prevent the silicon wafer from being displaced on the support mechanism, the support mechanism is further provided with a second limiting mechanism for limiting the radial position of the silicon wafer. The second limiting mechanism limits the displacement of the silicon wafer on the support surface of the support mechanism.

[0015] In order to realize the second limiting mechanism, the second limiting mechanism further comprises a plurality of limiting posts provided on the support mechanism, wherein the plurality of limiting posts enclose a limiting area for limiting the displacement of the silicon wafer.

[0016] In order to realize the spray mechanism, the nozzle device further comprises a delivery pump and a spray head, wherein the output end of the delivery pump is connected to the spray head. The output end of the delivery pump is connected to the spray head, and the structure is simple, and the spray mechanism is realized.

[0017] To prevent the spray mechanism from concentrating the spray on a single spot on the silicon wafer, which could cause uneven force on the wafer and cause it to deflect, the ejector pins are further arranged on a plate body, which has a plurality of spray holes arranged in an array. The array of spray holes allows the medium to act evenly on the silicon wafer, thereby evenly applying force to the wafer and preventing the spray mechanism from concentrating the spray on a single spot on the wafer.

[0018] The beneficial effects of the present invention are as follows: when the silicon wafer etching device of the present invention is in use, the silicon wafer is supported by placing it on a supporting mechanism, and the spraying mechanism sprays the medium on a single side of the silicon wafer. Under the action of the medium, the silicon wafer is suspended and contacts the limiting mechanism. The limiting mechanism limits the displacement range of the silicon wafer between the supporting mechanism and the limiting mechanism. The original immersion is changed to spraying, and the silicon wafer will not flip over to the other side of the silicon wafer due to medium fluctuations, thereby ensuring stable silicon wafer production and avoiding the need for single-sided etching with a solution in an etching tank during the traditional silicon wafer production process. The solution will fluctuate during the transportation of the silicon wafer by the conveying wheel, and the fluctuating solution will easily flip to the other side, thus causing the silicon wafer to be contacted and etched by the solution. In severe cases, the silicon wafer will be scrapped, which increases production costs and reduces work efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The present invention will be further described below with reference to the accompanying drawings and examples.

[0020] Figure 1 It is a front view of the present invention;

[0021] Figure 2 yes Figure 1 A partial enlarged view of middle A;

[0022] Figure 3 It is a schematic diagram of the internal structure of the present invention.

[0023] In the figure: 1. trough body, 101. upper trough, 102. lower trough, 103. through hole, 2. cover plate, 3. core shaft, 4. floating pressure wheel, 401. mounting hole, 5. ejector pin, 6. limiting column, 7. spray head, 8. silicon wafer, 9. delivery pump, 10. plate body, 11. spray hole. DETAILED DESCRIPTION

[0024] The present invention is further described in detail below in conjunction with the embodiments:

[0025] The present invention is not limited to the following specific embodiments. Based on the disclosure of the present invention, a person skilled in the art may adopt a variety of other specific embodiments to implement the present invention. Any simple changes or modifications made to the design structure and concept of the present invention fall within the scope of protection of the present invention. It should be noted that the embodiments and features of the embodiments of the present invention may be combined with each other unless they conflict.

[0026] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, features defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0027] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed connections, detachable connections, or integral connections; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0028] like Figure 1-3As shown, a silicon wafer etching device includes a spray device for spraying a medium on a single side of a silicon wafer 8, a supporting mechanism for supporting the silicon wafer 8, and a first limiting mechanism for limiting the displacement range of the silicon wafer 8. The supporting mechanism is located between the spray mechanism and the first limiting mechanism. When the silicon wafer 8 is placed on the supporting mechanism, there is a gap between the silicon wafer 8 and the first limiting mechanism. When the spray device sprays the medium on a single side of the silicon wafer 8, the silicon wafer 8 is suspended and separated from the supporting mechanism under the force of the medium. At the same time, the silicon wafer 8 contacts the first limiting mechanism and limits the displacement of the silicon wafer 8.

[0029] It also includes a trough body 1, and the spraying device, supporting mechanism and limiting mechanism are all arranged on the trough body 1.

[0030] The tank body 1 includes an upper tank 101 and a lower tank 102 . The upper tank 101 is arranged above the lower tank 102 . The upper tank 101 and the lower tank 102 are connected to each other.

[0031] A cover plate 2 is provided on the top of the tank body 1 .

[0032] The first limiting mechanism includes a core shaft 3 arranged above the silicon wafer 8 .

[0033] The first limiting mechanism further includes a floating pressure wheel 4 , which is provided with a mounting hole 401 . The diameter of the mounting hole 401 is larger than the diameter of the core shaft 3 , and the core shaft 3 passes through the mounting hole 401 .

[0034] When the silicon wafer 8 is placed on the supporting mechanism, the floating pressure wheel 4 contacts the silicon wafer 8 .

[0035] The supporting mechanism includes a plurality of ejector pins 5 arranged above the spraying device.

[0036] The supporting mechanism is provided with a second limiting mechanism for limiting the radial position of the silicon wafer 8 .

[0037] The second limiting mechanism includes a plurality of limiting posts 6 disposed on the support mechanism, which enclose a restricted area for restraining the silicon wafer 8. The radial limiting mechanism of the second limiting mechanism here means that the silicon wafer can move between the spray device and the first limiting mechanism, that is, in the height direction, while limiting the planar displacement of the silicon wafer.

[0038] The nozzle device includes a delivery pump 9 and a spray head 7 , and the output end of the delivery pump 9 is connected to the spray head 7 .

[0039] The ejector pins 5 are mounted on a plate 10, which is arrayed with a plurality of spray holes 11. The ejector pins 5 and the limiting posts 6 are all threadedly connected to the plate 10. The cover plate 2 is mounted within the upper groove 101, and the core shaft 3 is fixedly mounted on the cover plate 2. The cover plate 2 is mounted on the upper groove 101. The input end of the delivery pump 9 is connected to the lower groove 102. The upper groove 101 is provided with a through hole 103 that connects to the lower groove 102. The spray head 7 is fixed in the upper groove 101, the ejector pins 5 are located above the spray head 7, and the floating pressure roller 4 is located above the ejector pins 5.

[0040] When the above-mentioned silicon wafer etching device is in use, the silicon wafer 8 is first placed on the ejector pin 5, and the silicon wafer 8 is restricted on the limiting column 6. At this time, the silicon wafer 8 can only move in the direction of the floating pressure roller 4 in the spray head 7. The cover plate 2 of the upper groove 101 is covered, and the floating pressure roller 4 contacts the silicon wafer 8. The delivery pump 9 is started to deliver the medium in the lower groove 102 to the spray head 7. The spray head 7 outputs the medium through the spray hole 11 on the plate body 10. At the same time, the medium is evenly sprayed onto a single side of the silicon wafer 8. Under the action of the medium, the silicon wafer 8 gradually floats and drives the pressure roller to rise and be restricted within a certain range. The sprayed medium falls into the upper groove 101, and then the medium enters the lower groove 102 through the through hole 103, realizing the recycling of the medium. After the completion time, the delivery pump 9 is stopped, and the silicon wafer 8 gradually falls onto the ejector pin 5. Then, the cover plate 2 is opened, the silicon wafer 8 is taken out and transferred to the next process.

[0041] The above description of the preferred embodiments of the present invention is intended to serve as a guide. Based on the above description, relevant personnel are fully capable of making various changes and modifications without departing from the technical scope of this invention. The technical scope of this invention is not limited to the contents of the specification and must be determined according to the scope of the claims.

Claims

1. A silicon wafer etching device, characterized in that: The invention comprises a spray device for spraying a medium on a single side of a silicon wafer (8), a support mechanism for supporting the silicon wafer (8), and a first limiting mechanism for limiting the displacement range of the silicon wafer (8), wherein the supporting mechanism is located between the spray device and the first limiting mechanism. When the spray device sprays the medium on a single side of the silicon wafer (8), the silicon wafer (8) is suspended and separated from the supporting mechanism under the action of the medium, and at the same time, the silicon wafer (8) contacts the first limiting mechanism and limits the displacement of the silicon wafer (8); The first limiting mechanism comprises a core shaft (3) arranged above the silicon wafer (8); The first limiting mechanism further comprises a floating pressure wheel (4), wherein the floating pressure wheel (4) is provided with a mounting hole (401), wherein the diameter of the mounting hole (401) is larger than the diameter of the core shaft (3), and the core shaft (3) passes through the mounting hole (401). When the silicon wafer (8) is placed on the supporting mechanism, the floating pressure wheel (4) contacts the silicon wafer (8). By floatingly arranging the floating pressure wheel (4) on the core shaft (3), the floating pressure wheel (4) plays a buffering role on the silicon wafer (8).

2. The silicon wafer etching device according to claim 1, wherein: It also comprises a trough body (1), on which the spraying device, the supporting mechanism and the first limiting mechanism are all arranged.

3. The silicon wafer etching device according to claim 2, wherein: The trough body (1) comprises an upper trough (101) and a lower trough (102); the upper trough (101) is arranged above the lower trough (102); and the upper trough (101) and the lower trough (102) are communicated with each other.

4. The silicon wafer etching device according to claim 2 or 3, characterized in that: A cover plate (2) is provided above the trough body (1).

5. The silicon wafer etching device according to claim 1, wherein: When the silicon wafer (8) is placed on the support mechanism, the floating pressure wheel (4) contacts the silicon wafer (8).

6. The silicon wafer etching device according to claim 1, wherein: The supporting mechanism comprises a plurality of ejector pins (5) arranged above the spraying device.

7. The silicon wafer etching device according to claim 1 or 6, characterized in that: The support mechanism is provided with a second limiting mechanism for radially limiting the silicon wafer (8).

8. The silicon wafer etching device according to claim 7, wherein: The second limiting mechanism comprises a plurality of limiting columns (6) arranged on the supporting mechanism, wherein the plurality of limiting columns (6) enclose a limiting area for limiting the silicon wafer (8).

9. The silicon wafer etching device according to claim 1, wherein: The spraying device comprises a delivery pump (9) and a spray head (7), and the output end of the delivery pump (9) is connected to the spray head (7).

10. The silicon wafer etching device according to claim 6, wherein: The ejector pin (5) is arranged on a plate body (10), and a plurality of spray holes (11) are arranged in an array on the plate body (10).

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