Substrate processing equipment

Abstract

The present invention provides a substrate processing device capable of shortening the time from when a rectifying member is installed to when a stable operation can be performed. The substrate processing device comprises: an air supply unit that supplies air to a position where a substrate is located; and a rectifying member that has a plurality of through holes and rectify the air supplied from the air supply unit, wherein the rectifying member comprises a substrate and a charge dissipation layer disposed on a surface of the substrate, wherein charges attached to a surface of the rectifying member are dissipated along the charge dissipation layer.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing device. Background Art

[0002] In a substrate processing device such as a single-wafer cleaning device, a fan filter unit is provided at the top of a chamber, and a rectifying plate is provided between the fan filter unit and a substrate holding mechanism for holding the substrate. The rectifying plate rectify the airflow emitted by the fan filter unit.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2005-72374 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] The present disclosure provides a substrate processing apparatus capable of shortening the time from when a rectifying member is mounted to when a stable operation can be performed.

[0008] Solutions for solving problems

[0009] A substrate processing device in one embodiment of the present invention comprises: an air supply unit that supplies air to a position where a substrate is located; and a rectifying component that has a plurality of through holes that rectify the air supplied from the air supply unit, wherein the rectifying component comprises: a substrate; and a charge dissipation layer that is disposed on a surface of the substrate, wherein charges attached to the surface of the rectifying component are dissipated along the charge dissipation layer.

[0010] Effects of the Invention

[0011] According to the present disclosure, the time from when the flow regulating member is mounted until when stable operation can be performed can be shortened. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a diagram showing a schematic configuration of a substrate processing system according to an embodiment.

[0013] Figure 2 It is a diagram showing a schematic structure of an etching unit.

[0014] Figure 3 This is a diagram showing a schematic structure of an example of a rectifying plate.

[0015] Figure 4 is a flowchart showing a procedure of substrate processing performed by the substrate processing system.

[0016] Figure 5 1 is a schematic diagram showing the distribution of charges on the rectifier plate.

[0017] Figure 6 This is a schematic diagram showing the distribution of charges on the rectifier plate (part 2).

[0018] Figure 7 It is a cross-sectional view showing the method for manufacturing the flow rectifying plate according to the first example.

[0019] Figure 8 It is a diagram showing a schematic structure of another example of the rectifying plate.

[0020] Fig. 9 It is a cross-sectional view showing a method for manufacturing a flow straightening plate according to the second example.

[0021] Fig.10 It is a cross-sectional view showing a method for manufacturing a flow rectifying plate according to the third example.

[0022] Fig.11 It is a plan view showing a schematic structure of a modified example of the rectifying plate.

[0023] Fig.12 It is a diagram showing a schematic structure of an example of a supporting member.

[0024] Fig.13 It is a cross-sectional view showing a schematic structure of a rail member.

[0025] Fig.14 It is a cross-sectional view showing a schematic structure of a relay member.

[0026] Fig.15 It is a diagram showing a schematic structure of another example of the support member.

[0027] Fig.16 It is a cross-sectional view showing a schematic structure of a block.

[0028] Description of Reference Numerals

[0029] W: wafer; 20: chamber; 22: side wall; 60, 160, 260, 360: rectifying plate; 61: substrate; 64, 65, 262, 362: charge dissipation layer; 68: optical sensor; 70: supporting member; 170: guide rail member; 180: relay member; 270: short-circuit member; 370: block; 461: central area; 462: peripheral area. DETAILED DESCRIPTION

[0030] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. In each of the drawings, the same or corresponding components are denoted by the same or corresponding reference numerals and their description may be omitted.

[0031] <Structure of substrate processing system>

[0032] First, the configuration of a substrate processing system according to an embodiment will be described. Figure 1 1 is a diagram showing a schematic configuration of a substrate processing system according to an embodiment. In the following, in order to clarify the positional relationship, mutually orthogonal X-axis, Y-axis, and Z-axis are defined, and the positive direction of the Z-axis is defined as the vertically upward direction.

[0033] like Figure 1 As shown, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are provided adjacent to each other.

[0034] The loading / unloading station 2 includes a carrier placement unit 11 and a conveying unit 12. A plurality of carriers C for accommodating a plurality of wafers W in a horizontal state are placed on the carrier placement unit 11.

[0035] The conveying unit 12 is disposed adjacent to the carrier placement unit 11, and includes a substrate conveying device 13 and a delivery unit 14 inside the conveying unit 12. The substrate conveying device 13 includes a wafer holding mechanism for holding the wafer W. In addition, the substrate conveying device 13 can rotate around a vertical axis while moving in the horizontal direction and the vertical direction, and conveys the wafer W between the carrier C and the delivery unit 14 using the wafer holding mechanism.

[0036] The processing station 3 is provided adjacent to the conveying unit 12. The processing station 3 includes a conveying unit 15 and a plurality of etching units 16. The plurality of etching units 16 are arranged on both sides of the conveying unit 15. In addition, the number of etching units 16 is not limited to Figure 1 Example shown.

[0037] The conveying unit 15 includes a substrate conveying device 17 inside. The substrate conveying device 17 includes a wafer holding mechanism for holding the wafer W. In addition, the substrate conveying device 17 can rotate around a vertical axis while moving in the horizontal direction and the vertical direction, and conveys the wafer W between the interface 14 and the etching unit 16 using the wafer holding mechanism.

[0038] The etching unit 16 performs a predetermined substrate process on the wafer W transported by the substrate transport device 17 .

[0039] Furthermore, the substrate processing system 1 includes a control device 4 . The control device 4 includes a control unit 18 and a storage unit 19 .

[0040] The control unit 18 includes, for example, a microcomputer and various circuits including a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), an input / output port, etc. The CPU uses the RAM as a work area to execute a program stored in the ROM, thereby controlling the operation of the substrate processing system 1.

[0041] In addition, the above-mentioned program may be recorded in a computer-readable recording medium and installed from the recording medium into the storage unit 19 of the control device 4. Examples of computer-readable recording media include a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), and a memory card.

[0042] The storage unit 19 is realized by, for example, a semiconductor memory element such as a RAM or a flash memory, or a storage device such as a hard disk or an optical disk.

[0043] <Structure of etching unit>

[0044] Next, the structure of the etching unit 16 will be described. Figure 2 1 is a diagram showing a schematic structure of the etching unit 16 .

[0045] like Figure 2 As shown, the etching unit 16 includes a chamber 20 , a substrate holding mechanism 30 , a supply unit 40 , and a recovery cup 50 .

[0046] The chamber 20 contains a substrate holding mechanism 30, a supply unit 40, and a recovery cup 50. For example, the chamber 20 is grounded. A fan filter unit (FFU) 21 is provided on the top of the chamber 20. The FFU 21 forms a downward airflow in the chamber 20. The chamber 20 is an example of a housing, and the FFU 21 is an example of an air supply unit.

[0047] The substrate holding mechanism 30 includes a holding portion 31, a support column 32, and a driving portion 33. The holding portion 31 holds the wafer W horizontally. The wafer W is held by the holding portion 31 in a state where the surface on which the film to be etched is formed faces upward.

[0048] In the present embodiment, the holding unit 31 includes a plurality of gripping units 31 a and holds the wafer W by gripping the periphery of the wafer W using the plurality of gripping units 31 a . However, the present invention is not limited thereto and the holding unit 31 may be a vacuum chuck that holds the wafer W by suction.

[0049] The support part 32 is a member extending in the vertical direction, and the base end of the support part 32 is rotatably supported by the driving part 33, and the holding part 31 is horizontally supported at the top end of the support part 32. The driving part 33 rotates the support part 32 around the vertical axis. The substrate holding mechanism 30 rotates the holding part 31 supported by the support part 32 by rotating the support part 32 using the driving part 33, thereby rotating the wafer W held by the holding part 31.

[0050] The supply unit 40 is arranged above the wafer W held by the holding unit 31. The supply unit 40 is connected to one end of the supply passage 41, and the other end of the supply passage 41 is connected to a supply source 42 of the processing liquid. A flow regulating valve 43 capable of regulating the opening and closing action of the supply passage 41 and the supply flow rate of the processing liquid is inserted in the middle end of the supply passage 41. Therefore, when the flow regulating valve 43 is opened, the processing liquid is supplied from the supply unit 40 to the wafer W held by the holding unit 31. Thus, the processing liquid is supplied to the wafer W. The processing liquid is, for example, pure water (DIW), an aqueous solution (SC1 liquid) of NH4OH (ammonium hydroxide) and H2O2 (hydrogen peroxide), dilute hydrofluoric acid (DHF), isopropyl alcohol (IPA), etc. Figure 2 A set of the supply unit 40, the supply passage 41, the supply source 42, and the flow rate regulating valve 43 is shown in the figure, but the combination of the supply unit 40, the supply passage 41, the supply source 42, and the flow rate regulating valve 43 is provided separately for each processing liquid.

[0051] The recovery cup 50 is arranged to surround the holding portion 31, and is used to collect the processing liquid scattered from the wafer W due to the rotation of the holding portion 31. A drain port 51 is formed at the bottom of the recovery cup 50, and the processing liquid collected by the recovery cup 50 is discharged to the outside of the etching unit 16 from the drain port 51. In addition, an exhaust port 52 is formed at the bottom of the recovery cup 50, and the exhaust port 52 discharges the gas supplied from the FFU 21 to the outside of the etching unit 16.

[0052] Inside the chamber 20, a rectifying plate 60 is provided below the FFU 21. A support member 70 for supporting the rectifying plate 60 is attached to the side wall 22 of the chamber 20, and the rectifying plate 60 is supported by the support member 70. The rectifying plate 60 is an example of a rectifying member.

[0053] <Structure of the rectifier plate>

[0054] Next, the structure of the rectifying plate 60 will be described. Figure 3 1 is a diagram showing a schematic structure of an example of the rectifying plate 60 . Figure 3 (a) is a top view, Figure 3 (b) is a cross-sectional view.

[0055] like Figure 3As shown, the rectifier plate 160 involved in the first example of the rectifier plate 60 includes a plate-shaped substrate 61, a charge dissipation layer 64, and a charge dissipation layer 65. For example, the substrate 61 is made of an insulating material. For the material of the substrate 61, for example, a resin such as polyvinyl chloride (PVC), polypropylene (PP), polytetrafluoroethylene (PTFE), polychlorotrifluoroethylene (PCTFE) is used. The charge dissipation layer 64 covers the upper surface 62 of the substrate 61, and the charge dissipation layer 65 covers the lower surface 63 of the substrate 61. The charge dissipation layers 64 and 65 are made of conductive or electrostatically dissipative materials. When charges are attached to the surface of the rectifier plate 60, the charges are dissipated along the charge dissipation layer 64 or 65. Preferably, the charge dissipation layers 64 and 65 are resistant to corrosion by the treatment liquid. As conductive materials, precious metals such as gold and platinum are listed. As electrostatically dissipative materials, tin oxide, antimony-doped tin oxide (ATO), tin-doped indium oxide, etc. are listed. A plurality of through holes 69 are formed in the rectifying plate 160. The through holes 69 penetrate the charge dissipation layer 64, the substrate 61, and the charge dissipation layer 65. The thickness of the charge dissipation layers 64 and 65 is, for example, about 0.1 μm or more and 0.3 μm or less. The sheet resistance of the charge dissipation layers 64 and 65 is, for example, about 10 5 Ω / sq~10 11 The diameter of the through hole 69 is, for example, about 3 mm to 5 mm.

[0056] <Specific Operations of the Substrate Processing System>

[0057] Next, specific operations of the substrate processing system 1 will be described. Figure 4 1 is a flowchart showing the process of substrate processing performed by the substrate processing system 1. Each device provided in the substrate processing system 1 performs the following operations under the control of the control unit 18. Figure 4 The processing procedures shown.

[0058] like Figure 4 As shown, in the substrate processing system 1, first, a wafer W is carried into the etching unit 16 (step S101). Specifically, the substrate transfer device 13 of the loading and unloading station 2 takes out the wafer W from the carrier C placed on the carrier placement portion 11, and places the taken-out wafer W on the delivery portion 14. The wafer W placed on the delivery portion 14 is taken out from the delivery portion 14 by the substrate transfer device 17 of the processing station 3, and is carried into the etching unit 16. The wafer W carried into the etching unit 16 is held by the holding portion 31 of the etching unit 16.

[0059] Next, an etching process is performed in the substrate processing system 1 (step S102). In the etching process, the holding part 31 holding the wafer W is rotated by the driving part 33, and a processing liquid for etching is supplied from the supply part 40 to the wafer W held by the holding part 31. In addition, the holding part 31 holding the wafer W is rotated by the driving part 33, and a processing liquid for cleaning is supplied from the supply part 40 to the wafer W held by the holding part 31.

[0060] Next, a drying process is performed in the substrate processing system 1 (step S103). In the drying process, the supply of the cleaning process liquid is stopped while the wafer W is continuously rotated. Thus, the process liquid remaining on the wafer W is removed, and the wafer W is dried.

[0061] Next, the substrate processing system 1 performs a carry-out process (step S104). In the carry-out process, the wafer W after the drying process is carried out from the etching unit 16 by the substrate transport device 17 and placed on the delivery unit 14. Then, the substrate transport device 13 returns the processed wafer W placed on the delivery unit 14 to the carrier C of the carrier placement unit 11. Thus, a series of substrate processes performed on one wafer W are completed.

[0062] During such a series of substrate processing, the FFU 21 forms a downward airflow in the chamber 20. The rectifying plate 60 causes pressure loss in the downward airflow formed by the FFU 21, and functions as a buffer of a positive pressure state. Therefore, the rectifying plate 60 adjusts the flow rate of the downward airflow.

[0063] <Function of rectifier plate>

[0064] Usually, when performing maintenance on a substrate processing system, the rectifier plate is sometimes removed from the chamber. At this time, the rectifier plate is touched by the operator. In addition, the removed rectifier plate is sometimes wiped. In this way, the rectifier plate sometimes carries static electricity due to friction. When the rectifier plate is strongly charged, foreign matter such as dust sometimes adheres to the rectifier plate. Foreign matter attached to the rectifier plate may fall off the rectifier plate and contaminate the chamber. Therefore, it takes time from the installation of the rectifier plate until stable operation can be performed. In other words, it takes time until the cleanliness in the chamber reaches a predetermined cleanliness level that allows stable operation.

[0065] In this embodiment, since the rectifier plate 60 is provided with the charge dissipation layers 64 and 65 made of conductive or electrostatic dissipative materials, the electric field generated by the concentration of charges can be alleviated even if charged, compared with the rectifier plate without the charge dissipation layers 64 and 65. Figure 5 and Figure 6 Schematic diagram showing the distribution of charges in the rectifier plate. Figure 5(a) shows the change in the distribution of the charge in the rectifier plate 60X which is not provided with the charge dissipation layers 64 and 65 and is not grounded, Figure 5 (b) shows a change in the distribution of charges in the rectifying plate 60X which is not provided with the charge dissipation layers 64 and 65 but is grounded. Figure 6 (a) shows the change in the distribution of the charge in the rectifier plate 60 which is not grounded but in an electrically floating state. Figure 6 (b) shows a change in the distribution of charges in the grounded rectifying plate 60. Here, the rectifying plate 60X is formed of an insulating base material 61.

[0066] like Figure 5 As shown in (a), when the charges 80 are concentrated and attached to an arbitrary area in the rectifying plate 60X, the charges 80 remain in the attached area even after a certain period of time. Therefore, a local high potential area is generated, and foreign matter such as dust is easily attached to the area.

[0067] Even if the rectifier plate 60X is grounded, since the rectifier plate 60X is formed of an insulating substrate 61, Figure 5 As shown in (b), the charge 80 cannot move, and even after a period of time, the charge 80 remains in the region where it is attached. Therefore, a local high potential region is generated, and foreign matter such as dust is easily attached to this region.

[0068] On the other hand, Figure 6 As shown in (a), when the charges 80 are attached to a random area in the rectifying plate 60, the charges 80 are quickly dissipated along the charge dissipation layers 64 and 65. Therefore, even if the charge dissipation layers 64 and 65 are in an electrically floating state and the charges 80 remain in the rectifying plate 60, the generation of a local high potential area can be suppressed, and the adhesion of foreign matter such as dust can be suppressed.

[0069] In addition, when the rectifier plate 60 is grounded, Figure 6 As shown in (b), the electric charge 80 is drawn to the ground potential and removed from the rectifying plate 60. Therefore, the generation of a local high potential region can be further suppressed, and the adhesion of foreign matter such as dust to the rectifying plate 60 can be further suppressed.

[0070] Thus, in this embodiment, the use of the rectifying plate 60 can suppress the generation of local high potential areas, thereby suppressing the adhesion of foreign matter to the rectifying plate 60. In addition, by suppressing the adhesion of foreign matter, the time from mounting the rectifying plate 60 to stable operation can be shortened.

[0071] The reason why the rectifier plate is charged is not limited to friction during maintenance. Sometimes the rectifier plate is charged due to the adhesion of mist-like processing liquid scattered in the chamber during substrate processing. When the potential of the rectifier plate is locally increased during substrate processing, it is possible that an unexpected discharge occurs in the chamber and electrostatic breakdown occurs on the film formed on the wafer W, or the electrical properties of the film are affected. In this embodiment, since the generation of local high potential areas can be suppressed, such discharge can also be suppressed. In other words, the stability of the operation can be further improved.

[0072] Furthermore, since foreign matter is less likely to adhere to the rectifying plate 60 , maintenance work can be simplified.

[0073] In addition, when the material of the base material 61 is made of a material that transmits visible light, such as polyvinyl chloride (PVC), an optical sensor 68 can also be provided at a position above the rectifying plate 60 (see Figure 2 ) and the presence or absence of wafer W is detected by an optical sensor 68.

[0074] Furthermore, the through holes 69 do not need to be formed at a fixed density, and the rectifying plate 60 may include a region with a higher density of the through holes 69 and a region with a lower density of the through holes 69. In addition, the diameter of the through holes 69 may not be fixed. By adjusting the density and diameter of the through holes 69, the distribution and flow rate of the air supply can be adjusted.

[0075] <Manufacturing method of rectifier plate>

[0076] Next, Figure 3 A method for manufacturing the flow straightening plate 160 according to the first example shown will be described. Figure 7 It is a cross-sectional view showing a method of manufacturing the flow straightening plate 160 according to the first example.

[0077] First, if Figure 7 As shown in (a), a substrate 61 is prepared, a charge dissipation layer 64 is formed on the upper surface 62 of the substrate 61, and a charge dissipation layer 65 is formed on the lower surface 63 of the substrate 61. In forming the charge dissipation layers 64 and 65, for example, a paste containing particles of a material constituting the charge dissipation layers 64 and 65 is applied, and the paste is fired. Next, as Figure 7 As shown in (b), a plurality of through holes 69 are formed in the composite of the substrate 61 and the charge dissipation layers 64 and 65. The through holes 69 can be formed by machining, for example. After the through holes 69 are formed, burrs generated when the through holes 69 are formed are preferably removed.

[0078] In this way, it is possible to produce Figure 3 The rectifying plate 160 is shown.

[0079] <Structure of Other Examples of Rectifier Plate>

[0080] Next, the structure of another example of the rectifying plate 60 will be described. Figure 8 It is a diagram showing a schematic structure of another example of the rectifying plate 60 . Figure 8 (a) is a cross-sectional view showing a second example of the rectifying plate 60, Figure 8 (b) is a cross-sectional view showing a third example of the rectifying plate 60 .

[0081] like Figure 8 As shown in (a), the rectifier plate 260 involved in the second example of the rectifier plate 60 includes a substrate 61, a charge dissipation layer 64, a charge dissipation layer 65, and a charge dissipation layer 262. The charge dissipation layer 262 is connected to the charge dissipation layers 64 and 65, and covers the side surface 66 of the substrate 61. The charge dissipation layer 262 is made of a conductive or electrostatically dissipative material like the charge dissipation layers 64 and 65. The thickness of the charge dissipation layer 262 is, for example, about 0.1 μm to 0.3 μm, and the sheet resistance of the charge dissipation layer 262 is, for example, 10 5 Ω / sq~10 11 Ω / sq.

[0082] In the rectifying plate 160, the charge dissipation layer 64 and the charge dissipation layer 65 are insulated and separated from each other, whereas in the rectifying plate 260, the charge dissipation layer 64 and the charge dissipation layer 65 are electrically connected to each other via the charge dissipation layer 262. Therefore, if one of the charge dissipation layers 64 or 65 is grounded, the other is also grounded.

[0083] like Figure 8 As shown in (b), the rectifier plate 360 ​​involved in the third example of the rectifier plate 60 includes a substrate 61, a charge dissipation layer 64, a charge dissipation layer 65, a charge dissipation layer 262, and a charge dissipation layer 362. The charge dissipation layer 362 is connected to the charge dissipation layers 64 and 65, and covers the inner wall surface 67 of the through hole 69. The charge dissipation layer 362 is made of a conductive or electrostatically dissipative material like the charge dissipation layers 64 and 65. The thickness of the charge dissipation layer 362 is, for example, about 0.1 μm to 0.3 μm, and the sheet resistance of the charge dissipation layer 362 is, for example, 10 5 Ω / sq~10 11 Ω / sq.

[0084] In the rectifying plate 360, the charge dissipation layer 64 and the charge dissipation layer 65 are electrically connected to each other via the charge dissipation layers 262 and 362. Therefore, compared with the rectifying plate 260, the resistance between the charge dissipation layer 64 and the charge dissipation layer 65 can be reduced.

[0085] <Other Examples of Methods of Manufacturing Rectifier Plates>

[0086] Next, Figure 8A method for manufacturing a rectifying plate 260 according to a second example shown in (a) and Figure 8 A method for manufacturing the rectifying plate 360 ​​according to the third example shown in (b) will be described. Fig. 9 It is a cross-sectional view showing a method of manufacturing the flow straightening plate 260 according to the second example. Fig.10 It is a cross-sectional view showing a method of manufacturing the flow straightening plate 360 ​​according to the third example.

[0087] In the manufacturing method of the rectifying plate 260 according to the second example, first, Fig. 9 As shown in (a), a substrate 61 is prepared, a charge dissipation layer 64 is formed on the upper surface 62 of the substrate 61, a charge dissipation layer 65 is formed on the lower surface 63 of the substrate 61, and a charge dissipation layer 262 is formed on the side surface 66 of the substrate 61. In forming the charge dissipation layers 64, 65, and 262, for example, a paste containing particles of materials constituting the charge dissipation layers 64, 65, and 262 is applied, and the paste is baked. Next, as Fig. 9 As shown in (b), a plurality of through holes 69 are formed in the composite of the substrate 61 and the charge dissipation layers 64, 65 and 262. The through holes 69 can be formed, for example, by machining. After the through holes 69 are formed, burrs generated when the through holes 69 are formed are preferably removed.

[0088] In this way, it is possible to produce Figure 8 The rectifying plate 260 shown in (a).

[0089] In the method for manufacturing the rectifying plate 360 ​​according to the third example, first, Fig.10 As shown in (a), a substrate 61 is prepared, and a plurality of through holes 69 are formed in the substrate 61. The through holes 69 can be formed, for example, by machining. After the through holes 69 are formed, it is preferred to remove the burrs generated when the through holes 69 are formed. Next, as shown in FIG. Fig.10 As shown in (b), a charge dissipation layer 64 is formed on the upper surface 62 of the substrate 61, a charge dissipation layer 65 is formed on the lower surface 63 of the substrate 61, a charge dissipation layer 262 is formed on the side surface 66 of the substrate 61, and a charge dissipation layer 362 is formed on the inner wall surface 67 of the through hole 69. In forming the charge dissipation layers 64, 65, 262, and 362, a paste containing particles of materials constituting the charge dissipation layers 64, 65, 262, and 362 is applied, and the paste is fired.

[0090] In this way, it is possible to produce Figure 8 The rectifying plate 360 ​​shown in (b).

[0091] Furthermore, the charge dissipation function (charge dissipation capability) of the charge dissipation layers 64 and 65 does not necessarily have to be equalized within a plane parallel to the upper surface 62 and the lower surface 63 . Fig.11It is a plan view showing a schematic structure of a modified example of the flow straightening plate 60 .

[0092] For example, Fig.11 As shown, when looking down at the charge dissipation layers 64 and 65, the first charge dissipation capacity of the central region 461 overlapping with the wafer W may be higher than the second charge dissipation capacity of the peripheral region 462 surrounding it. In other words, the charge may be more easily dissipated in the central region 461 than in the peripheral region 462. In this modification, static electricity is particularly difficult to be retained in the central region 461, and the falling of foreign matter onto the wafer W and the discharge near the wafer W can be further suppressed. The central region 461 is an example of the first region, and the peripheral region 462 is an example of the second region.

[0093] When manufacturing the rectifying plate 60 of this modification, for example, the content of particles constituting the charge dissipation layers 64 and 65 in the portion serving as the central region 461 is greater than the content of particles constituting the charge dissipation layers 64 and 65 in the portion serving as the peripheral region 462 .

[0094] <Rectifier board grounding>

[0095] As described above, when the charge dissipation layers 64 and 65 of the rectifying plate 60 are grounded, static electricity can be easily removed and the generation of a local high potential region can be suppressed. Here, a structure in which the charge dissipation layers 64 and 65 are grounded will be described. Fig.12 It is a diagram showing a schematic structure of an example of the support member 70 .

[0096] In this example, the rectifying plate 60 moves in the positive direction of the Y axis when installed, and moves in the negative direction of the Y axis when removed. That is, the rectifying plate 60 is inserted and pulled out along the Y axis direction. The supporting member 70 has a guide rail member 170 extending along the Y axis direction. The guide rail member 170 is installed on the inner side of two side walls 22 having a surface perpendicular to the X axis direction of the chamber 20. The supporting member 70 has a short-circuit member 270, which is installed on the side wall 22 located on the positive direction side of the Y axis among the two side walls 22 having a surface perpendicular to the Y axis direction of the chamber 20. Fig.13 2 is a cross-sectional view showing a schematic structure of the rail member 170 . Fig.14 2 is a cross-sectional view showing the schematic structure of the short-circuit member 270. Fig.13 and Fig.14 , the through hole 69 is omitted.

[0097] like Fig.13As shown, the cross section perpendicular to the Y-axis direction of the guide member 170 is an L-shape having two flat plate portions. One of the flat plate portions contacts the side wall 22, and the other flat plate portion contacts the rectifying plate 60. The guide member 170 includes a substrate 171 and a charge dissipation layer 172 formed on the surface of the substrate 171. For example, the material of the substrate 171 is the same as that of the substrate 61, and the material of the charge dissipation layer 172 is the same as that of the charge dissipation layers 64 and 65. The guide member 170 is fixed to the side wall 22 using a metal screw 173. The charge dissipation layer 172 is formed so as to connect at least a portion in contact with the charge dissipation layer 65 and a portion to which the metal screw 173 is mounted. By connecting the metal screw 173 to a ground wire, for example, to ground, the charge dissipation layer 65 can be grounded via the charge dissipation layer 172. Alternatively, the pipe 174 included in the supply passage 41 may be grounded, the pipe 174 may be sandwiched between two conductive resins 175, and the conductive resins 175 may be fixed to the rail member 170 by metal screws 176. In this case, if the charge dissipation layer 172 is connected to the conductive resin 175 or the metal screws 176, the charge dissipation layer 65 may be grounded.

[0098] In the case where the charge dissipation layer 64 and the charge dissipation layer 65 are insulated and separated from each other, for example, a relay member 180 connected to the charge dissipation layer 64 may also be used. The relay member 180 includes a substrate 181 and a charge dissipation layer 182 formed on the surface of the substrate 181. For example, the material of the substrate 181 is the same as that of the substrate 61, and the material of the charge dissipation layer 182 is the same as that of the charge dissipation layers 64 and 65. The relay member 180 is fixed to the side wall 22 using a metal screw 183. The charge dissipation layer 182 is formed so as to connect at least a portion in contact with the charge dissipation layer 64 and a portion to which the metal screw 183 is mounted. By connecting the metal screw 183 to a grounding wire, for example, to ground the charge dissipation layer 64, the charge dissipation layer 64 can be grounded via the charge dissipation layer 182. In the case where the charge dissipation layer 64 and the charge dissipation layer 65 are electrically connected to each other, the relay member 180 may also be used.

[0099] like Fig.14As shown, the cross section perpendicular to the X-axis direction of the short-circuit member 270 is a U-shape having three flat plate portions. Two mutually parallel flat plate portions are in contact with the rectifier plate 60, and the other flat plate portion is in contact with the side wall 22. The short-circuit member 270 includes a substrate 271 and a charge dissipation layer 272 formed on the surface of the substrate 271. For example, the material of the substrate 271 is the same as that of the substrate 61, and the material of the charge dissipation layer 272 is the same as that of the charge dissipation layers 64 and 65. The charge dissipation layer 272 is formed to connect at least the portion in contact with the charge dissipation layer 64 and the portion in contact with the charge dissipation layer 65. If the charge dissipation layer 65 is grounded through the guide rail member 170, the charge dissipation layer 64 is also grounded via the short-circuit member 270. In addition, the short-circuit member 270 can be fixed to the side wall 22 using a metal screw 273, or the metal screw 273 can be grounded by connecting it to a ground wire, etc., so that the charge dissipation layers 64 and 65 are grounded.

[0100] Fig.15 : is a diagram showing the schematic structure of another example of the support member 70. In this example as well, the rectifying plate 60 moves in the positive direction of the Y axis when installed, and moves in the negative direction of the Y axis when removed. That is, the rectifying plate 60 is inserted and pulled out along the Y axis direction. A frame 376 extending along the Z axis direction is provided in the chamber 20, and the support member 70 has a block 370, which is fixed to the frame 376 using metal screws 373. A connecting member 374 is fixed to the lower surface of the rectifying plate 60. The connecting member 374 is fixed to the rectifying plate 60 by, for example, welding or welding. When the rectifying plate 60 is installed in the chamber 20, the connecting member 374 contacts the surface of the block 370. The connecting member 374 is detachably fixed to the block 370 using metal screws 375. As described later, the metal screws 375 penetrate the side wall 22 and the block 370 to reach the connecting member 374. Fig.16 370 is a cross-sectional view showing the schematic structure of the block 370. Fig.15 and Fig.16 , the through hole 69 is omitted.

[0101] like Fig.16As shown, the block 370 includes a substrate 371 and a charge dissipation layer 372 formed on the surface of the substrate 371. For example, the material of the substrate 371 is the same as that of the substrate 61, and the material of the charge dissipation layer 372 is the same as that of the charge dissipation layers 64 and 65. The metal screw 375 penetrates the side wall 22 and the block 370 to reach the connecting member 374. The charge dissipation layer 372 is formed to connect at least a portion in contact with the charge dissipation layer 65 and a portion to which the metal screw 375 is mounted. For example, by connecting the metal screw 375 to a grounding wire or the like to be grounded, the charge dissipation layer 65 can be grounded via the charge dissipation layer 372. The charge dissipation layer 372 can also be formed to connect at least a portion in contact with the charge dissipation layer 65 and a side surface of the substrate 371. By grounding a portion of the charge dissipation layer 372 formed on the side surface of the substrate 371, the charge dissipation layer 65 can be grounded.

[0102] In addition, the number of the rectifying plates 60 provided in the chamber 20 is not limited, and for example, two rectifying plates 60 may be arranged along the Z-axis direction in the chamber 20. In this case, the charge dissipation layer may be provided on the two rectifying plates 60, or the charge dissipation layer may be provided only on the rectifying plate 60 arranged at the bottom.

[0103] In addition, the rectifying plate 60 may be applied not only to the etching unit but also to a substrate processing unit such as a film forming unit that forms a film on a wafer W. The rectifying plate 60 may be applied not only to a single-wafer type substrate processing unit but also to a batch type substrate processing unit that processes a plurality of wafers W. The rectifying plate 60 may be applied not only to the substrate processing unit but also to a portion where an FFU such as the conveyor 15 is provided.

[0104] Although preferred embodiments and the like have been described in detail above, the present invention is not limited to the above-described embodiments and the like, and various modifications and substitutions may be made to the above-described embodiments and the like without departing from the scope described in the claims.

Claims

1. A substrate processing device, characterized in that: have: an air supply unit that supplies air to a position where the substrate is located; and a rectifying member having a plurality of through holes for rectifying the air supplied from the air supply unit, Wherein, the rectifying component has: substrate; and a charge dissipation layer disposed on the surface of the substrate, The electric charges attached to the surface of the rectifying member are dissipated along the charge dissipation layer, The charge dissipation layer is arranged on the upper surface, lower surface and side surface of the substrate and the inner wall surface of the plurality of through holes, and the charge dissipation layer arranged on the upper surface is electrically connected to the charge dissipation layer arranged on the lower surface via the charge dissipation layer arranged on the side surface and the inner wall surface.

2. The substrate processing device according to claim 1, characterized in that: The charge dissipation layer comprises a layer of conductive or static dissipative material.

3. The substrate processing device according to claim 1 or 2, characterized in that: The charge dissipation layer has a thickness of 0.1 μm or more and 0.3 μm or less.

4. The substrate processing device according to claim 1 or 2, characterized in that: The charge dissipation layer has: a first region having a first charge dissipation capability; as well as The second region is provided so as to be farther from the substrate than the first region in a plan view and has a second charge dissipation capability lower than the first charge dissipation capability.

5. The substrate processing apparatus according to claim 1, wherein: The charge dissipation layer disposed on the upper surface and the charge dissipation layer disposed on the lower surface are insulated and separated from each other.

6. The substrate processing device according to claim 1 or 2, characterized in that: The charge dissipation layer is in an electrically floating state.

7. The substrate processing device according to claim 1 or 2, characterized in that: The charge dissipation layer is grounded.

8. The substrate processing device according to claim 7, characterized in that: A housing is provided, the housing accommodating the rectifying member and being grounded, The charge dissipation layer is electrically connected to the housing.

9. The substrate processing device according to claim 8, characterized in that: A support member is provided, the support member being electrically connected to the housing and the charge dissipation layer and supporting the rectifying member in the housing.

10. The substrate processing apparatus according to claim 1 or 2, characterized in that: An optical sensor is provided between the air supply unit and the rectifying member and is used to detect the state of the substrate.

Images