A semiconductor laser beam combining system and semiconductor laser

Abstract

In the semiconductor laser beam combining system provided by the present invention, any group of the quasi-parallel light beams is incident on the corresponding shaping unit, and the quasi-parallel light beams after passing through the corresponding shaping unit are incident on the grating stripe mirror, and the grating stripe mirror transmits and reflects the incident quasi-parallel light beams to form a combined light beam; or any group of the quasi-parallel light beams is incident on the corresponding shaping unit, and the quasi-parallel light beams after passing through the corresponding shaping unit are incident on the reflective step mirror group, and the reflective step mirror group reflects the incident quasi-parallel light beams to form a combined light beam. Through the two beam combining methods provided in the present application, a good spatial beam combining effect is achieved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor laser technology, and in particular to a semiconductor laser beam combining system and a semiconductor laser. Background Art

[0002] High-power semiconductor laser modules are currently widely used in the pumping field of fiber lasers and solid-state lasers due to their high electro-optical conversion efficiency, small size, high reliability and low price per watt. Semiconductor lasers usually require beam shaping and beam combining before the modules can be applied in practice. Although some of these beam combining methods can increase the output power, they sacrifice the beam quality. At the same time, due to the specific properties of the semiconductor laser itself, the output wavelength will drift with temperature and current, reducing the pumping efficiency. The above shortcomings make the beam combining module have certain defects in practical applications. Summary of the invention

[0003] In view of this, it is necessary to provide a semiconductor laser beam combining system with higher beam quality.

[0004] In order to solve the above problems, the present invention adopts the following technical solutions:

[0005] On the one hand, the present application provides a semiconductor laser beam combining system, comprising a plurality of groups of quasi-parallel light beams, a shaping unit with positive optical power and a grating stripe mirror arranged corresponding to any group of quasi-parallel light beams, wherein:

[0006] Any group of the quasi-parallel light beams is incident on the corresponding shaping unit, and the quasi-parallel light beams after passing through the corresponding shaping unit are incident on the grating stripe mirror, and the grating stripe mirror transmits and reflects the incident quasi-parallel light beams to form a combined light beam, wherein:

[0007] After the quasi-parallel light beam passes through the positive optical power shaping unit, the duty cycle of the light beam within one focal length on the image side and the light beam outside one focal length to two focal lengths changes. The shaping unit can realize the process of light beam change without distortion. By utilizing the change of the duty cycle of the light beam, the appropriate duty cycle position is selected to match the grating stripe mirror of the corresponding period for beam combining.

[0008] Some of the embodiments further include a collimating unit, through which the combined light beams are collimated to reduce the divergence angle after the combination.

[0009] In some embodiments, the shaping unit includes but is not limited to a glass spherical lens, a glass aspherical lens, a glass cylindrical lens, a glass spherical lens group, a glass aspherical lens group and a glass cylindrical lens group.

[0010] In some of the embodiments, the grating stripe mirror is coated with a reflective film corresponding to the wavelength of the semiconductor laser light source, and the grating angle of the grating stripe mirror matches the angle of the two combined beam paths.

[0011] On the other hand, the present application provides a semiconductor laser beam combining system, comprising a plurality of groups of quasi-parallel light beams, a shaping unit with positive optical power arranged corresponding to any group of quasi-parallel light beams, a collimating unit and a reflective step mirror assembly, wherein:

[0012] Any group of the quasi-parallel light beams is incident on the corresponding shaping unit, and the quasi-parallel light beams after passing through the corresponding shaping unit are incident on the collimating unit, and the light beams collimated by the collimating unit enter the reflective step mirror group, and the reflective step mirror group reflects the incident quasi-parallel light beams to form a combined light beam, wherein:

[0013] After the quasi-parallel light beam passes through the positive optical power shaping unit, the duty ratio of the light beam within one focal length on the image side and the light beam outside one focal length to twice the focal length changes, and the shaping unit can realize the process of light beam change without distortion.

[0014] In some embodiments, the shaping unit includes but is not limited to a glass spherical lens, a glass aspherical lens, a glass cylindrical lens, a glass spherical lens group, a glass aspherical lens group and a glass cylindrical lens group.

[0015] In some of the embodiments, after the quasi-parallel light beam is incident on the shaping unit, the collimating unit is placed at a position of 2 times the focal length on the image side.

[0016] In addition, the present application also provides a semiconductor laser including the semiconductor laser beam combining system.

[0017] By adopting the above technical solution, the technical effects achieved by the present invention are as follows:

[0018] The semiconductor laser beam combining system provided by the present invention has any group of quasi-parallel light beams incident on the corresponding shaping unit, and the quasi-parallel light beams after passing through the corresponding shaping unit are incident on the grating stripe mirror, and the grating stripe mirror transmits and reflects the incident quasi-parallel light beams to form a combined light beam; or any group of quasi-parallel light beams are incident on the corresponding shaping unit, and the quasi-parallel light beams after passing through the corresponding shaping unit are incident on the reflective step mirror group, and the reflective step mirror group reflects the incident quasi-parallel light beams to form a combined light beam. By using the beam combining method provided by the present invention, stripe light spots with different duty cycles can be obtained, and the light spots are distortion-free after passing through the shaping system. When the period of the stripe mirror matches the period of the provided combined light beam, the efficiency loss of the combined light beam is mainly due to the loss of reflectivity of the reflective film coated on the stripe mirror, and the reflection efficiency of the current process reflective medium film can reach more than 99.8%, so using these two beam combining methods, a good beam combining effect is achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments of the present invention or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0020] Figure 1 This is a schematic diagram of the structure of the semiconductor laser beam combining system provided in Example 1 of the present invention.

[0021] Figure 2 This is a schematic diagram of the structure of a semiconductor laser beam combining system provided in Example 2 of the present invention. DETAILED DESCRIPTION

[0022] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present invention, and should not be construed as limiting the present invention.

[0023] In the description of the present invention, it is necessary to understand that the terms "upper", "lower", "horizontal", "inside", "outside", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0024] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0025] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments.

[0026] Example 1

[0027] See also Figure 1 , is a schematic diagram of the structure of a semiconductor laser beam combining system provided in Example 1 of the present invention, comprising a plurality of groups of quasi-parallel light beams 110, a shaping unit 120 with positive optical power and a grating stripe mirror 130 arranged corresponding to any group of quasi-parallel light beams 110, wherein:

[0028] Any group of the quasi-parallel light beams 110 is incident on the corresponding shaping unit 120, and the quasi-parallel light beams after passing through the corresponding shaping unit 120 are incident on the grating stripe mirror 130, and the grating stripe mirror 130 transmits and reflects the incident quasi-parallel light beams to form a combined light beam.

[0029] Among them: the duty cycle of the quasi-parallel light beam after passing through the shaping unit 120 within one focal length on the image side and the light beam outside one focal length to two focal lengths is changing, and the speed of the duty cycle change depends on the focal length of the shaping unit 120 with positive optical focal length. The shorter the focal length, the faster the duty cycle changes. The shaping unit 120 can realize the process of light beam change without distortion, and the change of the duty cycle of the light beam is utilized to select the appropriate duty cycle position, and match the grating stripe mirror of the corresponding period to perform beam combining.

[0030] It can be understood that the change in the duty cycle of the light beam is related to the focal length of the shaping unit. The shorter the focal length, the faster the change in the duty cycle of the light beam.

[0031] Some of the embodiments further include a collimating unit 140 , through which the combined light beams are collimated to reduce the divergence angle after the combination.

[0032] It can be understood that when quasi-parallel light is not required, the beam can be shaped by matching the corresponding optical system according to the requirements after beam combining.

[0033] In some embodiments, the shaping unit 120 includes but is not limited to a glass spherical lens, a glass aspherical lens, a glass cylindrical lens, a glass spherical lens group, a glass aspherical lens group and a glass cylindrical lens group.

[0034] It can be understood that the shaping unit 120 is made of glass material, which can avoid the defocusing phenomenon caused by high temperature to the plastic material and the defect that the transmittance of the plastic material is lower than that of the glass material.

[0035] In some of the embodiments, the grating stripe mirror 130 is coated with a reflective film corresponding to the wavelength of the semiconductor laser light source, and the grating angle of the grating stripe mirror matches the angle of the two combined light paths.

[0036] In the semiconductor laser beam combining system provided by the embodiment of the present invention, any group of the quasi-parallel light beams is incident on the corresponding shaping unit, and the quasi-parallel light beams after passing through the corresponding shaping unit are incident on the grating stripe mirror, and the grating stripe mirror transmits and reflects the incident quasi-parallel light beams to form a combined light beam. By the beam combining method provided by this embodiment, stripe light spots with different duty cycles can be obtained, and the light spots are distortion-free after passing through the shaping system. When the period of the stripe mirror matches the period of the provided combined light beam, the efficiency loss of the combined light beam is mainly due to the loss of reflectivity of the reflective film coated on the stripe mirror, and the reflection efficiency of the current process reflective medium film can reach more than 99.8%, so using this beam combining method, a good beam combining effect is achieved.

[0037] Example 2

[0038] See also Figure 2 , which is a schematic diagram of the structure of a semiconductor laser beam combining system provided in the present application, including a plurality of quasi-parallel light beams 210, a shaping unit 220 with positive optical power arranged corresponding to any group of quasi-parallel light beams 210, a collimating unit 230 and a reflective step mirror group 240, wherein:

[0039] Any group of the quasi-parallel light beams 210 is incident on the corresponding shaping unit 220, and the quasi-parallel light beams after passing through the corresponding shaping unit 220 are incident on the collimating unit 230, and the light beams collimated by the collimating unit 230 enter the reflective step mirror group 240, and the reflective step mirror group 240 reflects the incident quasi-parallel light beams to form a combined light beam, wherein:

[0040] After the quasi-parallel light beam passes through the positive optical power shaping unit 220, the duty ratio of the light beam within one focal length on the image side and the light beam outside one focal length to two focal lengths changes. The shaping unit 220 can realize the process of light beam change without distortion.

[0041] In some embodiments, the shaping unit 220 includes but is not limited to a glass spherical lens, a glass aspherical lens, a glass cylindrical lens, a glass spherical lens group, a glass aspherical lens group and a glass cylindrical lens group.

[0042] In some embodiments, after the quasi-parallel light beam is incident on the shaping unit 220, the collimating unit is placed at a position of 2 times the focal length on the image side.

[0043] In the semiconductor laser beam combining system provided by the embodiment of the present invention, any group of the quasi-parallel light beams is incident on the corresponding shaping unit, and the quasi-parallel light beams after passing through the corresponding shaping unit are incident on the reflective step mirror group, and the reflective step mirror group reflects the incident quasi-parallel light beams to form a combined light beam. By using the beam combining method provided by the embodiment of the present application, stripe light spots with different duty cycles can be obtained, and the light spots are distortion-free after passing through the shaping system. When the period of the stripe mirror matches the period of the provided combined light beam, the efficiency loss of the combined light beam is mainly due to the loss of reflectivity of the reflective film coated on the stripe mirror, and the reflection efficiency of the current process reflective medium film can reach more than 99.8%, so a good beam combining effect is achieved by using these two beam combining methods.

[0044] The above are only preferred embodiments of the present invention, and only specifically describe the technical principles of the present invention. These descriptions are only for explaining the principles of the present invention and cannot be interpreted as limiting the scope of protection of the present invention in any way. Based on the explanations here, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention, and other specific implementations of the present invention that can be associated with by technicians in this field without creative labor, should be included in the scope of protection of the present invention.

Claims

1. A semiconductor laser beam combining system, characterized in that: The invention comprises a plurality of groups of quasi-parallel light beams, a shaping unit with positive optical power and a grating stripe mirror arranged corresponding to any group of quasi-parallel light beams, wherein: The shaping unit is made of glass material, and any group of the quasi-parallel light beams is incident on the corresponding shaping unit. The quasi-parallel light beams after passing through the corresponding shaping unit are incident on the grating stripe mirror, and the grating stripe mirror transmits and reflects the incident quasi-parallel light beams to form a combined light beam, wherein: After the quasi-parallel light beam passes through the positive optical power shaping unit, the duty cycle of the light beam within one focal length on the image side and the light beam outside one focal length to two focal lengths changes. The shaping unit can realize the process of light beam change without distortion. By utilizing the change of the duty cycle of the light beam, the appropriate duty cycle position is selected to match the grating stripe mirror of the corresponding period for beam combining.

2. The semiconductor laser beam combining system according to claim 1, characterized in that: It also includes a collimating unit, through which the combined light beams are collimated to reduce the divergence angle after the combination.

3. The semiconductor laser beam combining system according to claim 1, characterized in that: The grating stripe mirror is plated with a reflective film corresponding to the wavelength of the semiconductor laser light source, and the grating angle of the grating stripe mirror matches the angle of the two-way combined beam light path.

4. A semiconductor laser, characterized in that: A semiconductor laser beam combining system comprising any one of claims 1 to 3.

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