Magnet arrangement of a plasma source for performing plasma processing

Abstract

In order to improve the etching depth and / or etching uniformity at the substrate, a plasma source is proposed which has one or more separate electrodes or one or more magnets. The magnets generate a magnetic field near the electrodes, which can be on the rear side or on the front side.

Description

Technical Field

[0001] In general, the present invention relates to a plasma source and, in particular, a plasma source having a magnet device. Background Technology

[0002] On the one hand, to generate plasma, an electroglow discharge can be used, which is formed by applying a sufficiently high voltage between the cathode and anode to allow current to flow through a gas, such as argon or other inert gases at a defined low pressure. On the other hand, plasma generation in the form of low-pressure plasma from a gas or gas mixture can be achieved through the interaction of high-energy electrons with the gas, provided by an electron source and accelerated to a defined energy by appropriate electrodes. Such an electron source can be, for example, a cathode vacuum arc evaporator, which consists of a suitably shielded arc cathode and an arc anode that absorbs arc electrons. To generate plasma, these arc electrons are absorbed by appropriate electrodes and accelerated at high energy. The resulting gaseous plasma can be used for various plasma treatments of the substrate. For example, the resulting inert gas ions (e.g., argon ions) can be used for ion purification of the substrate. Compounds excited in the plasma that may be decomposed, as well as atomized molecules of gases and gas mixtures, can be used for thermochemical treatment of the substrate or even for layer deposition. Applicable here: localized plasma generation can be tuned with respect to the treatment objectives using electrodes with appropriate shape, arrangement, and operating parameters. Here, the objective is to implement the electrodes in a way that allows them to extend into the processing chamber without causing interference, to withstand high power densities, and to be maintained as simply as possible. A further objective of the invention is to enable, by means of a suitable magnetic field at least at the electrodes introduced into the processing chamber, the plasma at the electrodes generating the gas plasma to be modulated in time and space, thereby allowing for the adjustment of the spatial and temporal plasma distribution within the processing chamber. Summary of the Invention

[0003] This invention relates to a vacuum chamber for performing plasma processing, the vacuum chamber comprising: a plasma processing zone surrounded by a chamber wall; and a plasma source. In this case, the plasma source comprises: at least one cathode arranged in the vacuum chamber for cathode vacuum arc evaporation, the cathode having an arc anode connected to the vacuum chamber; and at least one electrode arranged in the vacuum chamber. A shield may be arranged in front of the cathode, and the electrode has a working surface for capturing electrons emitted by the cathode, characterized in that the working surface is a two-dimensional surface for capturing electrons emitted by the cathode. The two-dimensional surface has a first orthogonal extension and a second orthogonal extension relative to the surface normal, wherein the first orthogonal extension is perpendicular to the second orthogonal extension, and the length ratio of the first orthogonal extension to the second orthogonal extension is between 0.1 and 1. Here, a magnet for generating a magnetic field is arranged in the vacuum chamber, on the vacuum chamber, or both in and on the vacuum chamber, the magnetic field acting on the working surface of the electrode.

[0004] Typically, the magnet may include a front magnet and / or a rear magnet. The front magnet is arranged in a region of the working surface to generate a front magnetic field, while the rear magnet is arranged behind the working surface to generate a rear magnetic field. The magnet according to the invention can be designed as a magnetic circuit, i.e., designed as a coil or multiple magnets. This magnetic circuit surrounds the working surface or is arranged in front of the working surface. Particularly preferably, the electrode according to the invention comprises a total magnet system including a front magnetic circuit and a rear magnetic circuit.

[0005] In embodiments of the invention, any number of electrodes and cathodes can be arranged in the vacuum chamber. In this case, a magnet can be arranged at each electrode or only at a subset of the electrodes. In this case, rear and / or front magnets can be arranged at these electrodes.

[0006] According to the invention, at least one magnet for generating a magnetic field at the electrodes is arranged in the vacuum chamber. In this case, a first electrode and a second electrode may be present. In this case, the first electrode may be affected by a first front magnetic field, and the second electrode may be affected by a second front magnetic field. In embodiments of the invention, it is also conceivable that the first electrode has a first rear magnetic field and the second electrode has a second rear magnetic field. In the case of multiple electrodes, a portion of these electrodes (or the first electrode) may have a rear magnetic field, while another portion of these electrodes (or the second electrode) may have a front magnetic field. If multiple electrodes are present, they may preferably be connected to a common power source, or of course, they may be connected to different power sources (current sources). The magnet in the vacuum chamber according to the invention may include a permanent magnet system and / or an electromagnet. If the magnet includes an electromagnet, the electromagnet may be designed as an electromagnetic coil coupled to the electrode. If multiple electrodes are present, any number of electrodes may have an adjustable magnetic field. The adjustable magnetic field according to the invention can be adjusted, in particular, by different current intensities, specific magnet arrangements, and different polarities. If multiple magnets are present, the polarities of these magnets, especially the rear or front magnets, may be reversible. The electrode according to the invention can in particular be an evaporator comprising at least one metal. All the above-described measures can be used, in particular, to adjust and influence the uniformity of the plasma. This is because the discharge can be altered at one or more electrodes via a magnetic field. Here, by operating multiple electrodes using a single power supply, the uniformity can be controlled while maintaining a stronger plasma excitation through the specification and adaptation of current values. The etching rate and etching uniformity can also be adjusted, for example, by adjusting the plasma uniformity and thus by using the magnetic field according to the invention. In particular, the etching profile can also be influenced by controlling the coils and / or arranging the magnets.

[0007] A typical industrial cathode vacuum arc evaporator can be used as the electron source. A shield can be placed in front of the cathode vacuum arc evaporator (hereinafter referred to as the arc evaporator) used as the electron source. This shield is designed to withstand the heat input caused by the vacuum arc evaporation. The area of ​​this shield should be larger than the total area of ​​the cathode vacuum arc evaporator, including the surface to be evaporated, in order to prevent substrate deposition.

[0008] Electrodes that collect one or more electrons can be used as uncooled electrodes. However, using uncooled electrodes can limit the power available to power these electrodes. Therefore, it is more advantageous to use cooled electrodes, such as water-cooled electrodes.

[0009] One or more typical (arc) grid devices can be used as energy supply devices for the electrodes, providing voltages up to 100V and currents up to 400A. In this case, given the corresponding dimensions of the working surface and the corresponding operating mode at these electrodes, a current of 0.1 to 5 A / cm² can be achieved. 2 The current density ranges from 0.25 to 500 W / cm². 2 The power density.

[0010] In this chamber, the total pressure should be maintained in the range of 0.01 Pa to 5 Pa during plasma treatment, preferably in the range of 0.1 Pa to 2 Pa. Typical gases used here are argon, hydrogen, nitrogen, or hydrocarbon gases (e.g., C2H2, acetylene), which are used as pure gases or gas mixtures depending on the treatment objective.

[0011] The vacuum chamber according to the invention can include not only multiple electrodes but also multiple cathodes, especially cathode vacuum arc evaporators. In this case, the multiple cathodes may have a single shield or multiple shields. Here, multiple cathodes, especially cathode vacuum arc evaporators, with a single shield can advantageously be arranged in the vacuum chamber together with at least one electrode. In particular, the vacuum chamber may also include the same number of electrodes and cathodes (especially cathode vacuum arc evaporators), with more electrodes than cathodes (especially cathode vacuum arc evaporators), or more cathodes (especially cathode vacuum arc evaporators) than electrodes. In this case, the electrodes and cathodes can be arranged at different locations (walls, top, bottom) in the vacuum chamber. The plasma distribution in the vacuum chamber can be adjusted not only by the arrangement of the electrodes and cathodes (especially cathode vacuum arc evaporators) but also by the number of electrodes and cathodes (especially cathode vacuum arc evaporators). Furthermore, this can, for example, achieve an improvement in the etching depth and / or etching uniformity on the substrate in an ion etching process. Using more than one electrode allows for the use of different currents at the electrodes and the time-selective application of these currents, enabling improved control over plasma generation.

[0012] The electron current at the electrode can be adjusted by adapting the electrode voltage. A low electrode voltage results in a low electron current and low plasma activity.

[0013] The typical maximum electron current at one or more electrodes should be selected to be approximately 120% of the current of the cathode vacuum arc evaporator. For example, if a cathode vacuum arc evaporator is used as the electron source in a vacuum chamber containing argon gas at a pressure of 0.5 Pa, and the evaporator operates at an arc current of 100 A, then the total electrode current should be adjusted to approximately 120 A. That is, the current at a single electrode, or the sum of the currents at each electrode when using more than one electrode, should be adjusted to a maximum of 120 A. Electrode currents less than or equal to the arc current are preferred.

[0014] If multiple electrodes (more than one) are arranged along the chamber wall such that they are distributed along the height of the vacuum chamber, each electrode can be operated on a separate power supply or on a specific power supply group. The electrodes can be switched to operate at maximum current or to operate in parallel at maximum current by applying different voltages to different electrodes. Typical electrode voltages range from 10 V to 50 V, and typical electrode currents range from 10 A to 200 A.

[0015] This invention can also be used to perform coating processes, such as coating diamond-like carbon (DLC) layers. In cases where an aC:H type DLC layer should be coated, a mixture of acetylene (C2H2) and argon gas streams should be supplied to the chamber.

[0016] In fact, any coating apparatus designed to perform vacuum coating processes, such as PVD arc evaporation or PVD sputtering processes, including HiPIMS, or plasma-assisted chemical deposition (PA-CVD) processes, can be adapted according to this invention to perform plasma processing.

[0017] In the apparatus according to the invention, a magnet for generating a magnetic field at the electrode should be arranged in the chamber. Here, the magnet can be a front magnet that can be manually controlled so that its magnetic field can be changed. However, the front magnet can also be a permanent magnet.

[0018] In the apparatus according to the invention, the electron accelerating electrode is not spatially linear in terms of the ratio of its length to a cross-section that is often rectangular, circular, or elliptical. A substantially two-dimensional electrode is used. That is, the two-dimensional surface has a first orthogonal extension and a second orthogonal extension relative to the surface normal, wherein the first orthogonal extension is perpendicular to the second orthogonal extension. The length ratio of the first orthogonal extension to the second orthogonal extension is between 0.1 and 1. The length ratio of the first orthogonal extension to the second orthogonal extension can also be between 0.2 and 1, particularly between 0.4 and 1, and especially 1. Here, the working surface can be from 5 to 2000 cm. 2 Especially those between 25 and 320 cm 2 Within the range between [specific values]. The two-dimensional surface can be circular, elliptical, but it can also be rectangular or have other suitable shapes. If the two-dimensional surface is circular, the first orthogonal extension and the second orthogonal extension specifically correspond to the diameter of the two-dimensional surface. If the two-dimensional surface is rectangular, the first orthogonal extension corresponds to the first side length of the two-dimensional surface and the second orthogonal extension corresponds to the second side length of the two-dimensional surface. If the two-dimensional surface is elliptical, the first orthogonal extension and the second orthogonal extension specifically correspond to the distance between the opposite vertices of the two-dimensional surface. Two-dimensional also specifically refers to an electron incident on a substantially flat surface. However, due to manufacturing or use, the surface itself may have a certain structure. This structure may occur due to corrosion of the electrode when used as a coating source or due to cleaning the electrode by, for example, spraying or grinding. Here, due to this corrosion, the electrode may be eroded, so that the electrode no longer has a flat or regular structure / edge. Such a structured and corroded electrode is also considered substantially flat within the framework of this invention. The ratio of the maximum depth of the structuring to the smaller orthogonal extension of the two-dimensional surface of the electrode (in terms of the first or second orthogonal extension according to the invention) is at most 0.4, especially at most 0.3, and particularly at most 0.2. That is, the maximum depth of the structuring should always be less than the smaller orthogonal extension. In this case, the two-dimensional surface of the electrode preferably has an active magnetic field.

[0019] In the simplest case, a circular electrode is used, preferably with an electrode diameter of 100 mm. In this case, the electrode can be fixed to the wall of the vacuum chamber or at least partially arranged in the chamber wall. If the electrode is at least partially arranged in the chamber wall, this has a significant advantage: the electrode does not extend significantly into the coating space. If multiple two-dimensional electrodes are present as described above, these electrodes can be fixed to different chamber walls. If, for example, two two-dimensional electrodes are constructed, these two two-dimensional electrodes are preferably arranged on opposite chamber walls. However, it is also possible, of course, for multiple two-dimensional electrodes to be arranged on adjacent chamber walls and / or multiple two-dimensional electrodes to be arranged on the same chamber wall. Here, when the first and second electrodes are operated overlapping or side by side on the chamber wall, the first and second electrodes preferably have a distance of 20 to 400 mm, especially 100 to 300 mm, particularly 200 mm.

[0020] Here, the arrangement of two-dimensional electrodes on the chamber wall has advantages over existing technologies with linear electrodes in a vacuum chamber, particularly in the plasma processing zone at the center of the vacuum chamber. More free space is provided within the vacuum chamber, especially in this central plasma processing area. Therefore, better utilization of the chamber is possible through this free space. To better utilize the chamber, the substrate to be processed can be better distributed within the vacuum chamber because more space is available for its distribution due to the free space provided within the chamber. This also allows for uniform plasma processing of the substrate surface, especially when the substrate to be processed can be more uniformly arranged within the chamber. Another advantage of the apparatus according to the invention is the ability to achieve simple cooling of these electrodes according to the invention. Of course, the two-dimensional surfaces present in the electrodes according to the invention can be cooled significantly more simply and effectively than in linear electrodes. Cooling of the electron absorption surface can be direct (water flow) or indirect. Indirect cooling involves clamping a suitable electrode material onto a cooling body.

[0021] The cathode material of the cathode of the cathode-based vacuum arc evaporator (hereinafter referred to as the evaporator) of the electron source is preferably a metal, especially titanium (Ti), zirconium (Zr), or aluminum (Al). Of course, the cathode material can also be composed of other suitable elements, other suitable alloys (titanium alloys and / or zirconium alloys and / or aluminum and aluminum alloys), or other suitable metals that facilitate the adsorption of hydrogen and / or oxygen. Such characteristics of the cathode of the vacuum arc evaporator can, in particular, enable better vacuum quality for performing plasma processes. All possible target materials known from the prior art for the cathode vacuum arc evaporator are suitable as electrode materials. In particular, carbon targets composed of pure carbon or alloys such as copper-carbon alloys can also be used as electrode materials. Steel, copper, copper alloys, aluminum, aluminum alloys, or conductive evaporator materials such as aluminum-titanium, chromium, or vanadium are also suitable as electrode materials.

[0022] In embodiments of the invention, multiple electrodes may be arranged in the vacuum chamber. Preferably, each electrode includes a working surface according to the invention. If first and second electrodes are present in the vacuum chamber, a second front magnet may be arranged in front of the second working surface of the second electrode. The second front magnet may also be arranged at least partially beside or around the second working surface. Furthermore, a first front magnet may be arranged in front of the first working surface and / or the first front magnet may be arranged at least partially beside or around the first working surface.

[0023] The polarity of the magnet or magnetic circuit according to the invention can be arbitrarily adapted. In this case, the front and rear magnets (or magnetic circuits) can have the same or opposite polarities. In the case of multiple electrodes, the first front magnet can have the same polarity as the second front magnet. It is also possible that the first polarity of the first front magnet is opposite to the second polarity of the second front magnet. This also applies to the rear magnet. In particular, these magnets can have variable polarity.

[0024] In practice, the first electrode and the second electrode can be connected to a common power source, or the first electrode can be connected to a first power source and the second electrode can be connected to a second power source. Specifically, the plurality of electrodes may include a first set of electrodes and a second set of electrodes, the first set connected to the first power source and the second set connected to the second power source. If the first electrode and the second electrode are connected to a common power source, the variable pole performance of the first front magnet and / or the second front magnet is adjusted by reversing or regulating the current applied to the first magnet and / or the second magnet. Attached Figure Description

[0025] Unless otherwise described, the same reference numerals denote the same elements, features, and structures in all the accompanying drawings and throughout the description. The relative sizes and representations of these elements may not be to scale for reasons of clarity, clarification, or convenience.

[0026] Figure 1 An example of a known vacuum chamber for performing plasma processing is shown.

[0027] Figure 2 A schematic diagram of a vacuum chamber for performing plasma processing using electrodes, according to a first embodiment of the present invention, is shown.

[0028] Figure 2a A schematic diagram of a vacuum chamber for performing plasma processing using rectangular electrodes, according to another embodiment of the invention, is shown.

[0029] Figure 2b A schematic diagram of a vacuum chamber for performing plasma processing using electrodes according to another embodiment of the invention is shown, the electrodes having a switch between the electrodes and a power supply device.

[0030] Figure 2c A schematic diagram of a vacuum chamber for performing plasma processing using electrodes according to another embodiment of the invention is shown, the electrodes having switches for reversing the polarity of a power supply device.

[0031] Figure 3 A schematic diagram of a vacuum chamber according to another embodiment of the invention for performing plasma processing using two electrodes according to the invention, each having a power source.

[0032] Figure 4 A schematic diagram of a vacuum chamber according to another embodiment of the invention for performing plasma processing using two electrodes according to the invention, each having a power source.

[0033] Figure 5 A schematic diagram of a vacuum chamber for performing plasma processing using an electrode and two cathodes according to another embodiment of the invention is shown.

[0034] Figure 6 A schematic diagram of a vacuum chamber for performing plasma processing using two electrodes and two cathodes according to another embodiment of the invention is shown.

[0035] Figure 7 A schematic diagram of a vacuum chamber for performing plasma processing using two electrodes and two cathodes according to another embodiment of the invention is shown.

[0036] Figure 8 A schematic diagram of a vacuum chamber for performing plasma processing using three electrodes and three cathodes according to another embodiment of the invention is shown.

[0037] Figure 8a A schematic diagram of a vacuum chamber for performing plasma processing using three electrodes and three cathodes according to another embodiment of the invention is shown.

[0038] Figure 9 A schematic diagram of a vacuum chamber according to another embodiment of the invention is shown for performing plasma processing using three electrodes according to the invention on different chamber walls.

[0039] Figure 9a A schematic diagram of a vacuum chamber according to another embodiment of the invention is shown for performing plasma processing using three electrodes according to the invention on different chamber sections.

[0040] Figure 10 A schematic diagram of a vacuum chamber for performing plasma processing using a front magnet, according to an embodiment of the present invention, is shown.

[0041] Figure 11 A schematic diagram of a vacuum chamber for performing plasma processing using front and rear magnets, according to another embodiment of the invention, is shown.

[0042] Figure 12 A schematic diagram of a vacuum chamber for performing plasma processing using front and rear magnets, according to another embodiment of the invention, is shown.

[0043] Figure 13 A schematic diagram of a magnetic field configuration for two electrodes according to one embodiment is shown.

[0044] Figure 14 A schematic diagram of a vacuum chamber according to one embodiment of the invention for performing plasma processing using two rear magnets having separate power supply devices is shown.

[0045] Figure 15 A schematic diagram of an electrode device having front and rear magnets according to another embodiment is shown.

[0046] Figure 16 A graph showing magnetic field measurements according to one embodiment is shown.

[0047] Figure 17 A schematic diagram of a magnetic field configuration for two electrodes having front and rear magnets, according to another embodiment, is shown.

[0048] Figure 18 A graph showing the etching depth affected by a magnetic field according to one embodiment is presented.

[0049] Figure 19 A graph showing the etching depth of an example system according to the present invention is presented.

[0050] Figure 20 A table showing the experimental results compared to different glow discharge systems with known existing technologies is presented. DETAILED DESCRIPTION

[0051] Examples including one or more embodiments are depicted in the accompanying drawings. The invention is not limited to the described examples. For instance, one or more features of one embodiment may be implemented in another embodiment or even provided in another type of device.

[0052] Before performing coating processes, such as coatings applied via physical vapor deposition (PVD) or diamond-like carbon coatings, an auxiliary glow discharge process (also known as ion etching) can be performed on one or more substrates using an electric arc. Here, ion etching is used to prepare or pretreat the surface; that is, the substrate surface is heated and etched by ion bombardment. This pretreatment improves the adhesion between the substrate and the coating. Figure 1The diagram illustrates a conventional ion etching process system. The system includes a vacuum chamber 1 with evaporators 7 (the arc cathode of a cathode vacuum arc evaporator, hereinafter simply referred to as evaporators), arranged on opposite sides of the chamber 1. The evaporators 7 are connected to a direct current source 8 and can operate at a voltage of 40 V and a current of up to 300 A. Baffles or shields 12 are connected to the walls of the chamber 1 and are rotatably arranged such that the baffles 12 can be rotated so that the corresponding electrodes 7 are either shielded or unshielded. Linear electrodes 13 are connected to the chamber and are equidistantly spaced from the evaporators 7. The linear electrodes 13 can be connected to current sources 11 and 14 via switches 15, 16, and 17 and have the same voltage along the electrodes 3 during operation. Current sources 11 and 14 are also connected to the walls of the chamber 1 and can be selectively connected to a rotatable substrate support 10 via switches 15 and 16. Gases, such as argon, are introduced into chamber 1 from gas source 6 through inlet 4 via valve 5. If an arc discharge is ignited, electrons are generated by evaporator 7 and accelerated toward linear electrode 13. These electrons excite argon atoms, thus producing partially ionized argon atoms that are deposited on the surface of substrate 9, thereby preparing the surface for coating. The system can only be adjusted by means of DC current sources 8, 11, and 14 and a rotating substrate support 10. Therefore, the system is characterized by limited ionization, limited adjustability of plasma activation due to linear electrode 13, and limited adjustability of uniformity in chamber 1.

[0053] according to Figure 2 The embodiment illustrates a schematically shown vacuum-sealed chamber 100 and an evaporator 110 disposed within the chamber 100 and may be directly mounted on the wall of the chamber 100. A power supply 111 with a negative terminal is also provided. This negative terminal of the power supply 111 or current source 111 is connected to the evaporator 110. In the current embodiment, the evaporator 110 is therefore a cathode 110. As shown, the evaporator 110 emits arc electrons, which are first partially drawn away and accelerated by the electrodes according to the invention, thus exciting the working gas—argon (Ar) (often accompanied by neon (Ne) or any other suitable gas or gas mixture)—and thus generating plasma. For this purpose, a positive accelerating voltage is applied to the electrode 120, which enables an electrode current to the electrode. Control of the electrode can typically be achieved by voltage or current, but can also be achieved by energy consisting of the product of voltage and current. Next, plasma ions are sprayed onto the surface of a substrate S, which is preferably centrally located in chamber 100, in order to prepare and activate the surface of the substrate for subsequent coating processes, for example by purification or etching. Figure 2Within chamber 100, a shield 115 can be movably arranged such that it can be selectively positioned between the evaporator 110 and the substrate S. Therefore, before ignition of the cathode vacuum arc evaporation, the shield 115 can be rotatably or otherwise moved in front of the evaporator 110 to protect the substrate S from contamination caused by the evaporator 110 during the process. If cathode vacuum arc evaporation is not present, the shield can be moved to another suitable location.

[0054] according to Figure 2 A single electrode 120 is provided. Electrode 120 is connected to the positive terminal of power supply 121 and is therefore the anode 120. The plasma generated in the system can be affected by using different currents and / or different time periods at the current source 121 at the anode 120.

[0055] like Figure 2 As shown, electrons emitted by the evaporator 110 are guided to the position of the electrode / anode 120 along the first and second electron paths 150. Therefore, the plasma generated in the chamber 100 can be accelerated in the same direction. By properly positioning the first electrode 120 at the desired location, better / simpler control of the plasma flow in the chamber 100 can be achieved, and thus improved control of the ion bombardment and etching of the substrate can be realized.

[0056] according to Figure 2a The embodiment illustrates a schematically shown vacuum-sealed chamber 100, which has a configuration consistent with... Figure 2 The chamber 100 of the embodiment has a similar construction. However, according to Figure 2a The two-dimensional surface of the first electrode 120a, used to capture electrons emitted by the cathode, is rectangular, while according to... Figure 2 The two-dimensional surface of the first electrode 120 is circular. In this case, the two-dimensional surface for capturing electrons emitted by the evaporator has a first orthogonal extension and a second orthogonal extension relative to the surface normal, wherein the first orthogonal extension is perpendicular to the second orthogonal extension, and the length ratio of the first orthogonal extension to the second orthogonal extension is between 0.1 and 1. In the case of the circular electrode 120, the first orthogonal extension and the second orthogonal extension specifically correspond to the diameter of the two-dimensional surface. In the case of the rectangular electrode 120a, the first orthogonal extension corresponds to a first side length of the two-dimensional surface, and the second orthogonal extension corresponds to a second side length of the two-dimensional surface.

[0057] according to Figure 2b The embodiment illustrates a schematically shown vacuum-sealed chamber 100, which has a configuration consistent with... Figure 2 The chamber 100 of the embodiment has a similar construction. However, according to Figure 2bAn embodiment includes a switching device 123 connected between the first electrode 120 and power supplies 121 and 122. Power supply 121 is arranged with its positive terminal at switch S1 of the switching device 123, and power supply 122 is arranged with its negative terminal at switch S2 of the switching device 123. If switch S1 is closed and switch S2 is open, electrode 120 can be used as a plasma electrode (i.e., also an anode) according to the invention. If switch S1 is open and switch S2 is closed, electrode 120 can be used in (arc) coating processes or sputtering processes (i.e., targets).

[0058] according to Figure 2c The embodiment illustrates a schematically shown vacuum-sealed chamber 100, which has a configuration consistent with... Figure 2 The chamber 100 of the embodiment has a similar construction. However, according to Figure 2c An embodiment includes a switching device 123 connected between the first electrode 120 and a power supply 121. The power supply 121 is positioned with its positive terminal at switch S1 and its negative terminal at switch S2 of the switching device 123. Furthermore, the positive terminal of the power supply 121 is connected to ground via switch S3, and the negative terminal of the power supply 121 is connected to ground via switch S4. If switch S1 is closed, switch S2 is open, switch S3 is open, and switch S4 is closed, the electrode 120 can be used as a plasma electrode according to the invention. If switch S1 is open and switch S2 is closed, switch S3 is closed, and switch S4 is open, the electrode 120 can be used in (arc) coating processes or sputtering processes.

[0059] according to Figure 3 The embodiment illustrates a schematically shown vacuum-sealed chamber 100. In this case, the first electrode 120 and the second electrode 130 are connected to the positive terminal of the same power source 121 or the same current source 121. Therefore, the first electrode 120 and the second electrode 130 are the first anode 120 and the second anode 130. By using different currents and / or different time periods at the current source 121 of the anodes 120 and 130, the plasma generated in this system can be affected.

[0060] Since a common power source is connected to the first electrode 120 and the second electrode 130, the same voltage can be applied to the first electrode 120 and the second electrode 130 using this device. The current can be applied to both electrodes 120 and 130 at the same time and for the same duration.

[0061] according to Figure 4 An embodiment illustrates a schematically shown vacuum-sealed chamber 100. In accordance with... Figure 4In one embodiment, a first power supply 121 is arranged on the first electrode 120 and a second power supply 131 is arranged on the second electrode 130. In this case, by using different currents and / or different time periods at the first power supply 121 and the second power supply 131, the plasma generated in the system can be affected, especially since the first power supply can supply a first current to the first electrode 120 and the second power supply can supply a second current to the second electrode 130. In this case, the first and second currents can be adjusted independently of each other, such that a plasma distribution can be formed by the first and second currents. In this case, the first power supply 121 can supply a first current to the first electrode 120 during a first time period and the second power supply 131 can supply a second current to the second electrode 130 during a second time period. The first and second time periods can be separated from each other or overlapped as needed.

[0062] In accordance with Figure 2-4 In one embodiment, there is a single evaporator 110 and at least one anode 120, 130, thereby generating a plasma arc.

[0063] exist Figure 3 、 4 In Figure 9, an embodiment of the plasma source is now schematically shown. To enable better control of the flow of electrons in chamber 100 (i.e., the vacuum chamber according to the invention, hereinafter referred to as the chamber), unlike in the embodiment... Figure 1 In the case of a device including linear electrodes, a plurality of electrodes 120, 130, 140 according to the invention are provided, these electrodes having two-dimensional surfaces for capturing electrons emitted by the cathode, and these electrodes can be arranged in the chamber. A very important advantage of this device is the possibility of positioning these electrodes on one or more walls of the chamber, thereby enabling an improved distribution of the substrate to be processed using plasma within the chamber. Thus, the plasma processing area within the chamber can be better utilized, thereby achieving higher efficiency. For example, in Figure 3A vacuum-sealed chamber 100 is schematically shown in diagram 4. An evaporator 110 is disposed within chamber 100 and may be directly disposed within or on the wall of chamber 110. Evaporator 110 may comprise one or more metals, such as titanium and / or any other metal disposed for evaporation. The negative terminal of a power source or current source is connected to evaporator 110 and thus connected to evaporator 110 as a cathode. If evaporator 110 is ignited, for example by means of a triggering unit, arc electrons are emitted, which are accelerated by means of electrodes according to the invention and collide with one or more gases, such as argon (Ar), neon (Ne), or one or more other suitable gases, placed in chamber 110, thereby generating plasma. The plasma ions then bombard the surface of one or more substrates (not shown here) disposed in chamber 100 to prepare the surface of the substrates for subsequent coating processes, for example by cleaning or etching. One or more shielding elements 115 are movably disposed within chamber 100 such that the shielding elements 115 can be selectively positioned between the evaporator 110 and the substrate. Therefore, prior to ignition of the cathode vacuum arc evaporation, the shielding elements 115 can be rotatably or otherwise moved in front of the evaporator to protect the substrate from contamination caused by the evaporator 110 during the process. If cathode vacuum arc evaporation is not present, the shielding elements can be moved to other suitable locations.

[0064] according to Figure 3 and 4 Two electrodes, a first electrode 120 and a second electrode 130, are disposed in chamber 100. The first and second electrodes 120 and 130 are connected to the positive terminal of at least one power source or current source, thereby serving as first and second anodes. For example, as... Figure 3 As shown, a common power supply 121 can be connected to the first electrode 120 and the second electrode 130. In this device, the same voltage can be applied to the first electrode 120 and the second electrode 130. This voltage can be applied to both electrodes 120 and 130 simultaneously and for the same duration. Alternatively, according to Figure 4A first power source 121 can supply current to a first electrode 120 during a first time period, and a second power source 131 can supply current to a second electrode 130 during a second time period. The first and second time periods can be separated or overlapped as needed. In another example, the first electrode 120 can be connected to the first power source 121, and the second electrode 130 can be connected to the second power source 131. Therefore, the first power source 121 can supply a first current to the first electrode 120, and the second power source 131 can supply a second current to the second electrode 130. By using different currents and / or different time periods, the plasma generated in this system can be influenced, controlled, or homogenized.

[0065] like Figure 3 and 4 As shown, electrons emitted by the evaporator 110 flow to the positions of the first and second electrodes 120, 130. By properly positioning the individual first electrode 120 and second electrode 130 at the desired locations, better control of the plasma flow in the chamber 100 can be achieved, and thus improved control of the ion bombardment and etching of the substrate S can be achieved. Figure 9 The diagram illustrates an embodiment in which three separate electrodes are arranged: a first electrode 120, a second electrode 130, and a third electrode 140. This results in corresponding first, second, and third electron paths 160, which point in the directions of the first, second, and third electrodes 120, 130, and 140, respectively. Following... Figure 3 and 4 In the schematic accompanying drawings, electrodes 120 and 130 are arranged opposite to the evaporator 110. However, according to... Figure 9 In the schematic accompanying drawings, electrodes 120, 130, and 140 are arranged in different chamber sections. However, it is readily understood that any suitable positioning of the first, second, or optionally third electrodes is possible to influence the electron flow, thereby achieving improved plasma activation and homogenization within the chamber. Correspondingly, any number of electrodes within the chamber is possible to deflect the electron flow onto a desired path. Figure 3 、 4 The evaporator 110 of 9 can be used with an applied current of 100 A; however, any other suitable current intensity can certainly be used.

[0066] Figure 5Another embodiment of a chamber 200 in which multiple evaporators are disposed is shown. The chamber 200 includes a first evaporator 210 and a second evaporator 220, which are connected as cathodes, i.e., connected to the negative terminals of a first power supply 211 and a second power supply 221. The first and second evaporators 210, 220 are disposed on the walls of the chamber 200. Alternatively, the first or second evaporators 210, 220 may also be arranged on a suitable structure of the walls of the chamber 200 or disposed within the chamber 200. A rotatable or otherwise movable shield 230 is disposed near the first and second evaporators 210, 220. The shield 230 may be large enough to shield two evaporators 210, 220. Alternatively, the chamber 200 may include first and second shields, which are respectively attached to the first evaporator 210 and the second evaporator 220 (not shown here). Furthermore, a first electrode 240 is disposed in chamber 200, which is connected as an anode, i.e., connected to the positive terminal of the first current source 241. As shown by electron path 260, electrons emitted by the first evaporator 210 and electrons emitted by the second evaporator 220 both flow toward the first electrode 240. It is readily understood that any desired number of evaporators can be used with any desired number of individual electrodes, such that the system may include an appropriate number of evaporators and an appropriate number of electrodes.

[0067] according to Figure 6 The embodiment illustrates a schematically shown vacuum-sealed chamber 200, which has a configuration consistent with... Figure 5 The chamber 200 of the embodiment has a similar construction. However, according to Figure 6 Implementation examples and Figure 5 The difference lies in the presence of a first electrode 240 and a second electrode 250. In this case, the first electrode 240 and the second electrode 250 are connected to the positive terminal of the same power supply 241 or the same current source 241. Therefore, the first electrode 240 and the second electrode 250 are connected as the first anode 240 and the second anode 250.

[0068] Because a common power source is connected to the first electrode 240 and the second electrode 250, the same current can be applied to the first electrode 240 and the second electrode 250 in this device. This current can be applied to both electrodes 240 and 250 at the same time and for the same duration.

[0069] Figure 6Another embodiment of the plasma source is shown, in which multiple evaporators are provided. Chamber 200 includes a first evaporator 210 and a second evaporator 220, both connected as cathodes. The first and second evaporators 210, 220 may be disposed in the wall of chamber 200 or elsewhere on chamber 200. Alternatively, the first or second evaporators 210, 220 may be arranged on a suitable structure of chamber 200 or disposed within chamber 200. A rotatable or otherwise movable shield 230 is disposed near the first and second evaporators 210, 220. The shield 230 may be large enough to shield both evaporators 210, 220. Alternatively, chamber 200 may include first and second shields, which belong to the first evaporator 110 and the second evaporator 220, respectively. Furthermore, a first electrode 240 and a second electrode 250 are provided in chamber 200, both connected as anodes. As shown via electron path 260, electrons emitted by the first evaporator 210 flow toward the first electrode 240, and electrons emitted by the second evaporator 220 flow toward the second electrode 250. It is readily understood that any desired number of evaporators can be used with any desired number of individual electrodes. Thus, Figure 6 The system may include, for example, two evaporators and four separate electrodes, such that electrons from the first evaporator 210 flow to two separate electrodes and electrons from the second evaporator flow to the other two separate electrodes.

[0070] according to Figure 7 The embodiment illustrates a schematically shown vacuum-sealed chamber 200, which has a configuration consistent with... Figure 6 The chamber 200 of the embodiment has a similar construction. However, according to Figure 7 Implementation examples and Figure 6 The difference lies in that a first power supply 241 is arranged at the first electrode 240 and a second power supply 251 is arranged at the second electrode 250. In this case, by using different currents and / or different time periods at the first power supply 241 and the second power supply 251, the plasma that can be generated in the system can be affected, especially since the first power supply can supply a first current to the first electrode 240 and the second power supply can supply a second current to the second electrode 250. In this case, the first and second currents can be adjusted independently of each other, so that a plasma distribution can be formed by the first and second currents. In this case, the first power supply 241 can supply a first current to the first electrode 240 during a first time period and the second power supply 251 can supply a second current to the second electrode 250 during a second time period. The first and second time periods can be separated from each other or overlapped as needed.

[0071] In accordance with Figure 5-7 In one embodiment, there are two evaporators 210, 220 and at least one anode 240, 250.

[0072] according to Figure 8 This embodiment is particularly applicable to large systems. Multiple plasma sources can be arranged in the chamber such that evaporators 311, 321, 331 and electrodes 340, 350, 360 are arranged along the height of the chamber, that is, along the height of the plasma processing area. Each plasma source in any case includes at least one evaporator and one, two, or more individual electrodes. Each electrode can be powered by its own power source, but multiple electrodes can simultaneously use a switchable power source.

[0073] Here, Figure 8 The chamber 300 includes a first evaporator 310, a second evaporator 320, and a third evaporator 330, which are connected as cathodes, i.e., connected to the negative terminals of the first power supply 311, the second power supply 321, and the third power supply 331. The first, second, and third evaporators 310, 320, and 330 are disposed on the same wall of the chamber 300. Alternatively, the first, second, and third evaporators 310, 320, and 330 may be arranged on a suitable structure of the wall of the chamber 300 or disposed within the chamber 300. Furthermore, the first, second, and third evaporators 310, 320, and 330 may be disposed on different walls, or the first and third evaporators 310 and 330 may be disposed on one wall while the second evaporator 320 may be disposed on another wall. Three rotatable or otherwise movable shielding members 334, 332, and 333 are respectively disposed near the first, second, and third evaporators 310, 320, and 330. Alternatively, chamber 300 may include a shielding element of sufficient size to shield all evaporators 310, 320, and 330. Furthermore, a first electrode 340, a second electrode 350, and a third electrode 360 ​​are disposed in chamber 300, which are connected as anodes 340, 350, and 360, respectively, to the positive terminals of the first power supply 341, the second power supply 351, and the third power supply 361. As shown by the electron path, electrons emitted by the first evaporator 310, the second evaporator 320, and the third evaporator 330 flow toward the three electrodes 340, 350, and 360.

[0074] In accordance with Figure 8In the schematic diagram, electrodes 340, 350, and 360 are arranged opposite evaporators 310, 320, and 330. However, it is readily understood that any suitable positioning of the first, second, and third electrodes is possible to influence the electron flow, thereby achieving improved plasma activation and homogenization within the chamber. Correspondingly, any number of electrodes within the chamber is possible to deflect the electron flow onto a desired path. The current applied to evaporators 310, 320, and 330 can be 100 A, but of course, any other suitable current intensity can be used.

[0075] That is, in accordance with Figure 8 In one embodiment, there are three evaporators 310, 320 and 330 and three anodes 340, 350 and 360.

[0076] Figure 8a Another embodiment of chamber 300 is shown, which has a similar configuration to... Figure 8 The structure is similar to that of the chamber in the example, however, the power supplies for the first electrode 340, the second electrode 350, and the third electrode 360 ​​operate at different energies. By using different energies, plasma homogeneity can be improved, and plasma distribution can be better controlled, by adjusting these energies accordingly at the respective power supplies.

[0077] As from Figure 4-8 It is evident that the substrate S can be negatively biased or positively biased, wherein the positive bias must be less than the positive bias of the electrodes, otherwise all electrons would flow to the substrate. Of course, a correspondingly pre-biased substrate is also suitable for additional plasma control. Furthermore, working gas and process gas are supplied to chambers 100 and 200 during operation. In this case, the working gas is preferably argon (Ar) and hydrogen (H2), and the process gas is preferably nitrogen (N2).

[0078] according to Figure 9 The embodiment illustrates a schematically shown vacuum-sealed chamber 100, which has a configuration consistent with... Figure 2 The chamber 100 of the embodiment has a similar construction. However, according to Figure 9 Implementation examples and Figure 2The difference lies in the presence of a first electrode 120, a second electrode 130, and a third electrode 140. A first power supply 121 is arranged at the first electrode 120, a second power supply 131 at the second electrode 130, and a third power supply 141 at the third electrode 140. In this configuration, by using different energies and / or different time periods at the first power supply 121, the second power supply 131, and the third power supply 141, the plasma generated in the system can be influenced, especially since the first power supply 121 supplies first energy to the first electrode 120, the second power supply 131 can supply second energy to the second electrode 130, and the third power supply 141 can supply third energy to the third electrode 140. In this case, the first, second, and third energies can be adjusted independently of each other, allowing for the formation of a plasma distribution through the first, second, and third energies.

[0079] Figure 9 The diagram illustrates an embodiment in which three separate electrodes are arranged: a first electrode 120, a second electrode 130, and a third electrode 140. This results in corresponding first, second, and third electron paths 160, which point in the directions of the first, second, and third electrodes 120, 130, and 140, respectively. Following... Figure 13 In the schematic drawings, electrodes 120, 130, and 140 are arranged opposite to evaporator 110. However, it is readily understood that any suitable positioning of the first, second, or optionally third electrodes is possible to influence the electron flow, thereby achieving improved plasma activation and homogeneity within the chamber. Correspondingly, any number of electrodes within the chamber is possible to deflect the electron flow onto a desired path.

[0080] according to Figure 9a The embodiment illustrates a schematically shown vacuum-sealed chamber 100, which has a configuration consistent with... Figure 9 The chamber 100 of the embodiment has a similar construction. However, in accordance with Figure 9a In this embodiment, electrodes 120, 130, and 140 are not only arranged on the walls of chamber 100. The first electrode 120 is arranged on the chamber wall, the second electrode 130 is arranged at the top of the chamber, and the third electrode 140 is arranged at the bottom of the chamber. The arrangement of these electrodes in the chamber can be arbitrarily adapted to control plasma distribution in particular.

[0081] Different exemplary configurations have been shown and described within the framework of this application, while other embodiments with any number of evaporators and any number of electrodes also fall within the scope of protection of the invention claimed herein. Furthermore, the vacuum chamber according to the invention can be used in ion etching processes and is equipped with multiple individual electrodes, wherein different currents can be supplied to different electrodes. The same or different currents can also be applied to different electrodes at different times to manipulate plasma activation and etching in a desired manner.

[0082] The electronic paths 150, 160, and 260 included in these figures are shown only schematically, as they pass by shields 115, 230, 332, 333, and 334 and do not pass through them.

[0083] exist Figures 2 to 9a In the vacuum chamber, particularly near the electrodes, or near at least one of the electrodes in the case of multiple electrodes, a magnet (not shown here) is arranged to generate a magnetic field. Particularly preferably, the magnet is arranged at the working surface of the electrode. Typically, the magnet may comprise a front magnet and / or a rear magnet. The front magnet is arranged in the region of the working surface to generate a front magnetic field, while the rear magnet is arranged behind the working surface to generate a rear magnetic field. In the presence of multiple electrodes, the front and / or rear magnets may also be arranged at one electrode or at a subset of the multiple electrodes. The substrate S can be negatively biased or positively biased, wherein the positive bias should be less than the positive bias of the electrodes, because otherwise all electrons would flow to the substrate. In operation, argon (Ar) and hydrogen (H2) are preferably supplied as working gases, and nitrogen (N2) is preferably supplied as a process gas.

[0084] Turn now Figure 10-12 The accompanying figures illustrate an embodiment in which a magnetic field can be applied to the individual electrodes of the vacuum chamber. The electron path can be controlled within the magnetic field, which correspondingly affects the charged particles in the plasma. More specifically, the diffusion of charged particles is hindered by the magnetic field. Thus, the loss of electrons and ions is reduced and the electron density is increased. Typically, an electromagnet is positioned from one end to the opposite end in the form of a coil surrounding the chamber to generate a magnetic field within it. Other conventional systems use permanent magnets arranged beneath a substrate and moved to generate the magnetic field. However, these configurations do not allow for control of the electron flow to the point that uniformity can be tuned and improved. In the embodiment described herein, a magnetic field is applied to each individual electrode. Figure 10An example is shown in which the electrode 300 is arranged near or within the electromagnet 302. For example, the electromagnet 302 may be a coil wound around the electrode 30, i.e., arranged in the region of the working surface of the electrode. In this case, the magnetic field is on the front side of the electrode 30. No rear magnetic field is generated.

[0085] Figure 11-12 An embodiment with a rear magnet 320 and a front magnet 310 is shown. Figure 11 In this configuration, electrode 30 includes an electromagnetic coil 302 disposed near or around electrode 30 (i.e., within the area of ​​the working surface and / or at least partially adjacent to the working surface). Electromagnetic coil 301 is positioned near electrode 30 behind the working surface to generate a rear magnetic field as a rear magnet. Depending on the desired magnetic field strength, the electromagnetic coil may include, but may not include, a ferrite core. As shown, the two coils 301 and 302 are arranged such that they have the same polarity. Figure 12 In this configuration, the magnetic fields between electromagnetic coils 301 and 302 have opposite polarities. By changing the direction of the current flowing through coil 301, this change in the polarity of the magnetic field (front and rear sides) can be achieved. Therefore, the magnetic field at a single coil can be adjusted. Figure 16 The graph shows an example of magnetic field strength (in mT, Y-axis), measured perpendicularly to a surface (circular electrode, 5 cm radius, zero point corresponding to the center of the electrode, X-axis being a radius in cm from the center of the electrode) with a coil current of 3 A. The middle curve shows... Figure 10 The magnetic field strength, in which no rear magnetic field was generated. The curve above shows the magnetic field strength according to... Figure 11 The magnetic field strength, where the magnetic field is generated by coils with the same polarization; and the curve below shows the magnetic field strength according to... Figure 12 The magnetic field strength is determined by coils with opposite polarization. In the case of the upper curve, a tunneling field exists because the upper curve extends from approximately ±3.2 in the negative region, and therefore the magnetic field has an opposite direction starting from that radius. In the case of the lower curve, the magnetic field emanating from the working surface has only one direction.

[0086] Figure 13 Another embodiment of the invention is shown. Figure 13The system shown is a vacuum chamber for performing plasma processing using a magnetic field configuration for two electrodes. An evaporator 450 is disposed within the chamber and can be directly (at least partially) embedded in or connected to the chamber wall. The negative terminal of a 100A current source can be connected to the evaporator, thereby connecting the evaporator as a cathode. Therefore, if the evaporator is ignited, electrons are emitted, and these electrons collide with argon (Ar) gas introduced into the chamber, thus generating plasma. Ions in the plasma then bombard the surface of one or more substrates (not shown) disposed in the chamber for purification and / or etching. One or more shielding elements are movably positioned in the chamber such that they can be selectively positioned between the evaporator and the substrate. Thus, the shielding elements can be moved in front of the evaporator 450 in a rotating or otherwise manner before ignition of the cathode vacuum arc evaporator to protect the substrate from contamination. If the arc generated by the cathode vacuum arc evaporator is absent, the shielding elements can be moved to an unshielded position. In the chamber according to the invention, at least one separate electrode should be provided in the chamber. However, in… Figure 13 In this configuration, a first electrode 460 and a second electrode 470 are provided. These electrodes are connected to the positive terminal of a power supply (also serving as a current source), for example, at an 80A, thus connecting electrodes 460 and 470 as anodes. Correspondingly, electrons flow from the evaporator 450 toward the positions of electrodes 460 and 470. This causes the generated plasma to accelerate in the same direction. Behind the working surfaces of electrodes 460 and 470, a first rear magnet 480 and a second rear magnet 490 are arranged to generate a rear magnetic field. The rear magnetic field can be applied to these electrodes by means of an electromagnet, which is achieved by arranging an electromagnetic coil behind the working surfaces of electrodes 460 and 470. When using electrodes with a magnetic field, one of the substrate currents can be increased, in particular, doubled, while maintaining substantially the same ion etching performance, thus resulting in increased etching of the substrate.

[0087] Despite Figure 13 Only the evaporator 450 is shown separately, but (as already mentioned in the section on...) Figure 5-8a As shown in the implementation scheme, any number of evaporators and electrodes can be used in the system. Larger systems and / or larger chambers may require two or more evaporators to generate a greater number of electrons.

[0088] Figure 14 It shows having the same as according to Figure 17 Examples of chambers 400 with similar construction to the embodiments described above. Unlike... Figure 15 , Figure 14The first and second electrodes are connected to different power supply devices (power supply device U1 and power supply device U2). In this way, the polarity of the two coils can be controlled and changed independently, thereby improving the etching uniformity.

[0089] In this case, Figure 14 In the vacuum chamber 400, front magnets (also called magnetic circuits) are arranged at the first electrode 460 and the second electrode 470, respectively. Furthermore, a first rear magnet 480 is arranged at the first electrode 460 and a second rear magnet 490 is arranged at the second electrode 470. As described above, the rear magnets 480 and 490 are connected to different power supply devices (power supply device 1 and power supply device 2). The front magnets are arranged in the vacuum chamber 400 (i.e., under vacuum), while the rear magnets 480 and 490 are arranged outside the vacuum chamber 400 (i.e., under atmospheric pressure). It is readily understood that the magnets may also include permanent magnets. As described above, the vacuum chamber according to the invention should include magnets arranged, beside, or around the (two-dimensional) working surface of the electrodes, either inside or outside the (vacuum) chamber, to generate a magnetic field. In this case, the magnets may include front magnets and / or rear magnets. Figure 15 In this configuration, the front magnet 302 is arranged in the region of the working surface 461 to generate a front magnetic field, while the rear magnet 301 is arranged behind the working surface 461 to generate a rear magnetic field. Alternatively, the front magnet can be arranged at least partially beside the working surface. Both the front and rear magnets can be designed as electromagnets, particularly as coils. By using electromagnets, it is possible to control the magnetic field (the rear or front magnetic field, especially the magnetic field obtained when using both rear and front magnets) over time. Here, the magnetic field can not only be pulsed, but its intensity can also be adapted with substantially the same magnetic field direction, and the magnetic field direction can also be reversed. The polarity of the magnetic field can be adapted by changing the direction of the current in the coil. Particularly preferably, when using the vacuum chamber according to the invention, a pre-defined program for the change of current in the coil can be provided. In this case, for example, a current of 3 A can be used in a first time period and a current of 3 A with the opposite current direction can be used in a second time period. The first and second time periods can be the same, but of course, they can also be different. The current intensities can also be different. In summary, the magnetic field generated by the coil can be controlled with respect to time, direction, and current intensity.

[0090] The system according to the invention may also include a plurality of front and / or rear magnets arranged in a ring, i.e., front and / or rear magnetic circuits. For example... Figure 15As shown, the front magnet 302 can be annular or multiple front magnets 302 can be arranged annularly to form a magnetic circuit. The multiple magnets may include, for example, 20 magnets arranged in a specific pattern, wherein each magnet is spaced apart from the others. To generate the front magnetic field, a second number of permanent magnets may be radially arranged within the first number of magnets. The multiple magnets may have polarities opposite to the second number of permanent magnets. The rear magnet 301 can also be designed as multiple magnets arranged in a pre-defined structure behind the working surface 461 of the electrode.

[0091] according to Figure 15 The annular front magnet 302 has a larger diameter than the circular working surface 461 of the electrode 460. In embodiments of the invention, the diameter of the front magnet can be 1.1 to 2 times larger than the diameter of the electrode.

[0092] In principle, the magnetization of the magnets should extend as parallel as possible to the surface normal of the working surface 461. For this purpose, the front magnets 302 can be arranged in front of, beside, and around the working surface 461. Alternatively, the magnetic route may consist of two magnets, with one pole arranged in front of the working surface and the other pole arranged beside (above or below) the working surface. In particular, these front magnets can also be movably arranged so that their positions relative to the working surface can be changed.

[0093] In summary, the magnet (or these magnets) is arranged such that any magnetic field structure (shape and intensity) can be generated on the working surface of the two-dimensional electrode. Here, for example, it is possible that the magnetic field strength in the outer region of the working surface is greater than that in the inner region of the working surface, but the reverse is also possible.

[0094] Typically, the magnet according to the invention can be at least partially designed as a permanent magnet, wherein all typical magnetic materials, such as hard ferrite, AlNiCo, NdFeB, and SmCo, can be used as bulk materials or as plastic-bonded magnets. The magnet can be made from a molded body, but it can also be segmented. A typical magnetic field strength preferably used in the vacuum chamber according to the invention has a magnetic field strength with the vertical component of the magnetic field on the electrodes according to the invention between 0.1 and 100 mT, preferably 1 to 50 mT, and especially 2 to 20 mT.

[0095] In all the listed embodiments, a substrate support can be arranged in the chamber. The substrate support preferably comprises multiple high-speed steel substrates arranged vertically at different heights. The substrate support is rotatably arranged in the chamber such that the substrate support plate can rotate about the central axis of the substrate support. Additionally, any vertical arrangement of the substrates can rotate about its individual axis. The first electrode and, if present, the second electrode, for example, have a diameter of 100 mm and are arranged in the chamber at a pre-defined vertical position. To observe the effects at the various electrodes and magnetic field during the experiment, measurements can be taken at three different electrode heights: 210 mm corresponding to the lower end of the second electrode B; 340 mm corresponding to 30 mm above the lower end of the first electrode; and 470 mm corresponding to 60 mm above the upper end of the first electrode A. The etched substrate is a steel body (100Cr6), which is rotated twice in the vacuum chamber.

[0096] exist Figure 17 Now, a chamber similar to the one described above is shown, in which a front magnetic field is additionally applied to the electrodes. The front magnetic fields of the first electrode 460 (A) and the second electrode 470 (B) have opposite polarities. These magnetic fields can be used to adapt the plasma near the first and second electrodes 460, 470, which can be achieved by changing the direction of the current applied to the corresponding coils. If a current of 80 A is applied to the electrodes, a current of 40 A is supplied to the first electrode 460 (A) and a current of 40 A is supplied to the second electrode 470 (B). As can be seen, if the magnetic fields applied to the electrodes 460, 470 have opposite polarities, the currents at both the first electrode 460 (A) and the second electrode 470 (B) remain close to 40 A. However, if the applied magnetic fields have the same polarity, the current at the first electrode is close to 80 A, while the current at the second electrode is close to 0 A. This is because the electron flow at the second electrode is almost completely shielded in this case.

[0097] Figure 18 and 20 The charts and tables illustrate measurements taken at a pre-given height, as with equipment conforming to 17. Figure 18 The results are shown in a graph. The X-axis represents the vertical position (210 mm) above the lower edge of the circular electrode B below, or in other words, the pre-defined height measured in mm, and the Y-axis represents the etch depth in nm. From this graph, it can be seen that substrates positioned at higher vertical positions on the substrate support exhibit weaker etch than those positioned at lower positions on the substrate support. The upper line in the graph shows... Figure 17An example is shown; while the line below illustrates a known system with linear electrodes. This is based on the principle that two separate electrodes operate in parallel. Figure 17 Due to the higher substrate current, a significantly higher etching rate was observed in this chamber. However, uniformity was not improved, as can be seen where the etching depth decreased with decreasing height. Figure 19 The following embodiment is shown, in which uniformity is improved over time by changing the polarity of the magnet compared to the prior art (below the line). The X-axis represents the vertical position (210 mm) above the lower edge of the circular electrode B below, or in other words, a pre-given height measured in mm, and the Y-axis represents the etching depth in nm.

[0098] Figure 20The first row of the table, marked "Stand.", shows measurements taken at a known system with conventional linear electrodes. 80 A was applied at the linear electrodes, and the substrate current was measured to be 1.9 A. The etch depth at the bottom measurement (bottom, 210 mm) was 250 nm. The depth at the middle measurement (mid, 340 mm) was 210 nm, corresponding to 84% of the bottom etch depth, while the depth at the top measurement point (top, 470 mm) was 110 nm, corresponding to 48% of the bottom etch depth. In the described embodiment with two separate electrodes, where only the backside magnetic field is applied to these electrodes, enhanced etching is exhibited due to the increased substrate current of 3.4 A; however, the same problem with uniformity exists. A current of 40 A was applied to each electrode. The etch depth at the bottom measurement (bottom, 210 mm) was 420 nm. The etching depth was 350 nm (83%) in the mid-measurement (340 mm) and 180 nm (43%) in the top-measurement (470 mm). The next two lines show the results when a magnetic field was applied to these electrodes. When a magnetic field of the same polarity was applied, the current at the first electrode was 75 A and at the second electrode was 5 A. The substrate current was as high as 4.5 A, and the etching depth at the top measurement (470 mm) was 760 nm. The mid-measurement (340 mm) was 620 nm (86%), and the bottom measurement (340 mm) was 300 nm (39%). If the polarity was reversed by reversing the direction of the current applied to the coil, the opposite effect was observed in terms of etching depth. The current applied to the first electrode was 49 A, and the current applied to the second electrode was 31 A. The substrate current was measured at 4 A. The maximum measurement depth in this configuration was 640 nm at the bottom measurement (210 mm). The middle measurement (340 mm) provides 490 nm (76%) while the top measurement (470 mm) provides 240 nm (38%).

[0099] The desired outcome is to achieve uniformity within the chamber, where the etching rate remains substantially constant across the entire height of the substrate support. Since the etching profiles exhibit opposite trends from top to bottom under the same magnetic field polarity and under opposite polarity, this uniformity can be achieved by superimposing these etching profiles over a certain time interval. The chosen time can be short, such as 1 to 10 revolutions of the substrate support, or longer if desired. Following... Figure 17 Examples of configurations have been found to show that if 2 / 3 of the processing time (e.g., 40 min) is used when applying a front magnetic field of the same polarity (as in the example of...). Figure 20 The third line of the result and Figure 19(as shown in the curve above) and one-third of the processing time (20 min) uses a front magnetic field of opposite polarity (as shown in) Figure 20 As shown in the fourth row of the results, good uniformity can be achieved.

[0100] Different exemplary configurations have been shown and described within the framework of this application, and other embodiments with any number of evaporators and any number of electrodes also fall within the scope of protection of the invention claimed herein. Furthermore, the ion etching system according to the invention can be equipped with multiple individual electrodes, wherein different currents can be supplied to different electrodes. The same or different currents can also be applied to different electrodes at different times to manipulate plasma activation and etching in a desired manner.

[0101] Although a series of embodiments have been described within the framework of this application, it is readily understood that other variations are possible. For example, the described embodiments can be combined and supplemented in a suitable manner or replaced by equivalent features with the same effect. Correspondingly, such other solutions also fall within the protection scope of the claimed invention.

Claims

1. A vacuum chamber for performing plasma processing, the vacuum chamber comprising a plasma processing region and a plasma source, the plasma processing region being surrounded by a chamber wall, the plasma source comprising: At least one cathode (110, 210, 220, 310, 320, 330, 450) for cathodic vacuum arc evaporation arranged in the vacuum chamber (100, 200, 300, 400) and an arc anode connected to the vacuum chamber (100, 200, 300, 400); a shield (115, 230, 332, 333, 334) that can be arranged in front of the cathode; at least one electrode (30, 120, 120a, 130, 140, 240, 250, 340, 350, 360, 460, 470) arranged in the vacuum chamber (100, 200, 300, 400), wherein the electrode is fixed to a wall of the vacuum chamber or is at least partially arranged in the chamber wall, wherein the electrode (30, 120, 120a, 130, 140, 240, 250, 340, 350, 360, 460, 470) comprises a working surface (461) for capturing electrons emitted by the cathode (110, 210, 220, 310, 320, 330, 450), It is characterized in that The working surface (461) is a two-dimensional surface for capturing electrons emitted by the cathode (110, 210, 220, 310, 320, 330, 450), and the two-dimensional surface has a first orthogonal extension and a second orthogonal extension relative to a surface normal, wherein the first orthogonal extension is perpendicular to the second orthogonal extension, and the length ratio of the first orthogonal extension to the second orthogonal extension is between 0.1 and 1; and At least one magnet (301, 302, 480, 490) for generating a magnetic field is arranged in the vacuum chamber (100, 200, 300, 400), on the vacuum chamber, or in and on the vacuum chamber, the magnetic field acting on the working surface (461) of the electrode (30, 120, 120a, 130, 140, 240, 250, 340, 350, 360, 460, 470), The magnets (301, 302, 480, 490) include front magnets (302) and / or rear magnets (301, 480, 490), wherein the front magnets (302) are arranged in the area of ​​the working surface (461) for generating a front magnetic field and the rear magnets (301, 480, 490) are arranged behind the working surface (461) for generating a rear magnetic field.

2. The vacuum chamber according to claim 1, wherein the front side magnet (302) is arranged in front of the working surface (461) and / or the front side magnet (302) is at least partially arranged beside or around the working surface (461); and / or The front side magnet (302) and / or the rear side magnet (301, 480, 490) are arranged in the vacuum chamber (100, 200, 300, 400), or the rear side magnet (301, 480, 490) is arranged outside the vacuum chamber (100, 200, 300, 400).

3. The vacuum chamber according to claim 1 or 2, wherein the front magnet (302) and / or the rear magnet (301, 480, 490) comprise a permanent magnet and / or an electromagnet, or the front magnet (302) and / or the rear magnet (301, 480, 490) are designed to be coupled to an electromagnetic coil (480, 490) on the electrode (30, 120, 120a, 130, 140, 240, 250, 340, 350, 360, 460, 470).

4. The vacuum chamber according to claim 1 or 2, comprising: A first electrode having a first working surface for capturing electrons emitted by the cathode (110, 210, 220, 310, 320, 330, 450); and a second electrode having a second working surface for capturing electrons emitted by the cathode (110, 210, 220, 310, 320, 330, 450); and / or multiple cathodes (110, 210, 220, 310, 320, 330, 450).

5. The vacuum chamber according to claim 1 or 2, comprising a plurality of electrodes (30, 120, 120a, 130, 140, 240, 250, 340, 350, 360, 460, 470), wherein a front magnet (302) located in front of the working surface (461) and a rear magnet (301, 480, 490) located behind the working surface (461) are arranged at at least one of the electrodes (30, 120, 120a, 130, 140, 240, 250, 340, 350, 360, 460, 470).

6. The vacuum chamber according to claim 1 or 2, wherein the front magnet (302) and the rear magnet (301, 480, 490) are both electromagnets and the vacuum chamber (100, 200, 300, 400) further comprises a current source connected to the rear magnet (302) and the front magnet (301, 480, 490), wherein the current source is designed so that the passing current reaching the rear magnet (302) and the front magnet (301, 480, 490) can be adjusted so that the polarity of the rear magnet and the front magnet can be reversed.

7. The vacuum chamber according to claim 5, wherein the plurality of electrodes (30, 120, 120a, 130, 140, 240, 250, 340, 350, 360, 460, 470) are connected to a common power supply or the plurality of electrodes (30, 120, 120a, 130, 140, 240, 250, 340, 350, 360, 460, 470) include a first group of electrodes (30, 120, 120a, 130, 140, 240, 250, 340, 350, 360, 460, 470) and a second group of electrodes (30, 120, 120a, 130, 140, 240, 250, 340, 350, 360, 460, 470), the first group of electrodes being connected to a first power supply, and the second group of electrodes being connected to a second power supply.

8. The vacuum chamber according to claim 4, wherein a first front magnet is arranged in the area of ​​the first working surface for generating a front magnetic field, and a second rear magnet is arranged behind the second working surface for generating a second rear magnetic field.

9. The vacuum chamber of claim 8, wherein the first front magnet is arranged in front of and / or beside and / or around the first working surface.

10. The vacuum chamber according to claim 1 or 2, wherein the magnetic field strength of the perpendicular component on the electrode (30, 120, 120a, 130, 140, 240, 250, 340, 350, 360, 460, 470) is between 0.1 and 100 mT.

11. The vacuum chamber of claim 10, wherein the magnetic field strength is between 1 and 50 mT.

12. The vacuum chamber of claim 10, wherein the magnetic field strength is between 2 and 20 mT.

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