Stretchable device, display panel, sensor, and electronic device

Abstract

A stretchable device, a display panel, a sensor, and an electronic device are disclosed. A stretchable device includes: a substrate including a first region having a first stiffness and a second region between adjacent first regions and having a second stiffness lower than the first stiffness; a unit device array including unit devices on respective separate first regions of the substrate; and an encapsulation covering the unit device array. The unit device array includes: pixel electrodes isolated on respective separate first regions of the substrate; common electrodes isolated on the separate first regions, and each common electrode facing a separate pixel electrode, the stretchable device being configured to apply the same voltage to the common electrodes; and active layers on the separate first regions, and each active layer being between a separate pixel electrode and a separate common electrode.

Description

Technical Field

[0001] A stretchable device, a display panel, a sensor, and an electronic device are disclosed. Background Art

[0002] Recently, research has been conducted on attachable devices that directly attach a display device or a biological device such as a smart skin device, a soft robot, and a biomedical device to the skin or clothing.

[0003] However, since such attachable devices need to be stretchable in any direction according to the movement of a living body and at the same time be able to maintain their original performance after recovery, a new structure different from conventional devices is required. Summary of the Invention

[0004] Some example embodiments provide a stretchable device having a new structure.

[0005] Some example embodiments provide a display panel including a stretchable device.

[0006] Some example embodiments provide a sensor including a stretchable device.

[0007] Some example embodiments provide an electronic device including a stretchable device, a display panel, or a sensor.

[0008] According to some example embodiments, a stretchable device may include a substrate. The substrate may include a plurality of first regions having a first stiffness and second regions having a second stiffness lower than the first stiffness between adjacent first regions among the plurality of first regions. The stretchable device may include a unit device array. The unit device array may include a plurality of unit devices on separate respective first regions among the plurality of first regions of the substrate. The stretchable device may include a package covering the unit device array. The unit device array may include: a plurality of pixel electrodes isolated on separate respective first regions among the plurality of first regions of the substrate; a plurality of common electrodes isolated on separate respective first regions among the plurality of first regions of the substrate, each common electrode among the plurality of common electrodes facing a separate pixel electrode among the plurality of pixel electrodes, the stretchable device being configured to apply the same voltage to the plurality of common electrodes; and a plurality of active layers on separate respective first regions among the plurality of first regions of the substrate, each active layer being between a separate pixel electrode among the plurality of pixel electrodes and a separate common electrode among the plurality of common electrodes.

[0009] The substrate may include an elastomer.

[0010] The difference between the elastic modulus of the plurality of first regions of the substrate and the elastic modulus of the second region of the substrate may be about 100 times or more.

[0011] The elongation rate of the first region of the substrate can be less than or equal to about 5%, and the elongation rate of the second region of the substrate can be from about 10% to about 100%.

[0012] The plurality of first regions of the substrate can each have an island shape and be separated from direct contact with each other, and the second region of the substrate can be a single continuous structure in the substrate.

[0013] The stretchable device can further include a connection electrode connecting the plurality of common electrodes.

[0014] The connection electrode can be on the second region of the substrate, or the connection electrode can be on both the first region and the second region of the substrate.

[0015] The connection electrode can be a stretchable electrode.

[0016] The connection electrode can include a conductive nanostructure.

[0017] The stretchable device can further include a pixel defining layer between adjacent unit devices in the unit device array, and the pixel defining layer has via holes corresponding to the separate individual unit devices of the unit device array. Each common electrode can be connected to the connection electrode through a separate via hole in the via holes of the pixel defining layer.

[0018] The pixel defining layer can include an elastomer.

[0019] The encapsulation can include a plurality of encapsulations, the plurality of encapsulations being separated from direct contact with each other and on separate individual first regions among the plurality of first regions of the substrate.

[0020] The plurality of encapsulations and the plurality of common electrodes can have the same planar shape.

[0021] The encapsulation can be on the entire surface of the substrate and include a cured product of a photosensitive elastomer.

[0022] The encapsulation can include a cured product of a photosensitive elastomer that can be cured at a temperature less than or equal to about 100 °C.

[0023] The active layer can be a light-emitting layer or a photoelectric conversion layer.

[0024] The active layer can be a light-emitting layer, and the light-emitting layer can include an organic light-emitting material, an inorganic light-emitting material, quantum dots, perovskite, or a combination thereof.

[0025] A display panel can include a stretchable device.

[0026] A sensor can include a stretchable device.

[0027] The sensor may include: a light-emitting diode configured to emit first light; and a photoelectric conversion device configured to sense second light generated based on reflection of the first light by an object. At least one of the light-emitting diode and the photoelectric conversion device may include a stretchable device.

[0028] The sensor may be a biosensor.

[0029] An electronic device may include a stretchable device, a display panel, and / or a sensor.

[0030] According to some example embodiments, a stretchable device may include a substrate. The substrate may include a first region having a first stiffness and a second region adjacent to the first region and having a second stiffness lower than the first stiffness. The stretchable device may include a unit device on the first region of the substrate and an encapsulant covering the unit device. The unit device may include a pixel electrode on the first region of the substrate, a common electrode on the pixel electrode, and an active layer between the pixel electrode and the common electrode.

[0031] The substrate may include an elastomer.

[0032] The difference between the elastic modulus of the first region of the substrate and the elastic modulus of the second region of the substrate may be about 100 times or more.

[0033] The elongation rate of the first region of the substrate may be less than or equal to about 5%, and the elongation rate of the second region of the substrate may be about 10% to about 100%.

[0034] The second region of the substrate may completely surround the first region of the substrate in a horizontal direction extending parallel to the substrate.

[0035] The stretchable device may further include a connection electrode connected to the common electrode. The connection electrode may be on the second region of the substrate, or the connection electrode may be on both the first region and the second region of the substrate.

[0036] The connection electrode may be a stretchable electrode.

[0037] The connection electrode may include a conductive nanostructure.

[0038] The active layer may be a light-emitting layer or a photoelectric conversion layer.

[0039] The stretchable device may flexibly respond to an external force or an external movement such as twisting, pressing, and pulling it in a specific (or alternatively, predetermined) direction while preventing damage or destruction of the unit device, so that it can be effectively applied to an attachable device directly attached to the skin or clothing. Description of the Drawings

[0040] Figure 1is a schematic view showing an example of the pixel arrangement of a stretchable device according to some example embodiments,

[0041] Figure 2 is according to some example embodiments Figure 1 a cross-sectional view taken along line II-II of an example of a stretchable device,

[0042] Figure 3 is a top view showing an example of a substrate of a stretchable device according to some example embodiments Figure 1 and Figure 2 of,

[0043] Figure 4 、 Figure 5 、 Figure 6 、 Figure 7 、 Figure 8 、 Figure 9 、 Figure 10 、 Figure 11 and Figure 12 are cross-sectional views sequentially showing examples of methods for manufacturing a stretchable device according to some example embodiments Figure 1 and Figure 2 of,

[0044] Figure 13 、 Figure 14 、 Figure 15 and Figure 16 are cross-sectional views sequentially showing examples of methods for manufacturing a stretchable device according to some example embodiments Figure 1 and Figure 2 of,

[0045] Figure 17 is according to some example embodiments Figure 1 a cross-sectional view taken along line II-II of another example of a stretchable device,

[0046] Figure 18 is according to some example embodiments Figure 1 a cross-sectional view taken along line II-II of another example of a stretchable device,

[0047] Figure 19 is according to some example embodiments Figure 1 a cross-sectional view taken along line II-II of another example of a stretchable device,

[0048] Figure 20 is according to some example embodiments Figure 1 a cross-sectional view taken along line II-II of another example of a stretchable device,

[0049] Figure 21 is according to some example embodimentsFigure 1 A cross-sectional view taken along line II-II of another example of a stretchable device,

[0050] Figure 22 is a schematic view showing an example of a skin-type display panel,

[0051] Figure 23 and Figure 24 is a schematic view showing an example of an attachable biosensor according to some example embodiments,

[0052] Figure 25 is a schematic view showing an example of the operation of a biosensor according to some example embodiments, and

[0053] Figure 26 is a schematic diagram of an electronic device according to some example embodiments. Detailed Description

[0054] Hereinafter, some example embodiments are described in detail so that those skilled in the art can easily implement them. However, the actual applied structure can be implemented in various different forms and is not limited to the example embodiments described herein.

[0055] In the drawings, for clarity, the thicknesses of layers, films, panels, regions, etc. are exaggerated.

[0056] It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, the element can be directly on the other element or there can also be intervening elements (i.e., indirectly on the other element). In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements.

[0057] It will be understood that an element and / or its properties can be stated herein as being "the same" or "equal" to other elements and / or their properties, and it will also be understood that elements and / or their properties stated herein as being "the same" or "equal" to other elements and / or their properties can be "the same" or "equal" or "substantially the same" or "substantially equal" to the other elements and / or their properties. Elements and / or their properties that are "substantially the same" or "substantially equal" to other elements and / or their properties will be understood to include elements and / or their properties that are the same or equal to the other elements and / or their properties within manufacturing tolerances and / or material tolerances. Elements and / or their properties that are the same or substantially the same as other elements and / or their properties can be the same or substantially the same structurally, the same or substantially the same functionally, and / or the same or substantially the same compositionally as the other elements and / or their properties.

[0058] It will be understood that elements and / or their properties described herein as "substantially" the same encompass elements and / or their properties having a relative difference with a magnitude equal to or less than 10%. Further, whether or not elements and / or their properties are modified as "substantially", it will be understood that these elements and / or their properties should be interpreted to include manufacturing or operating tolerances (e.g., ±10%) around the recited elements and / or their properties.

[0059] When the terms "about" or "substantially" are used in connection with a numerical value in this specification, it is intended that the associated numerical value include a tolerance of ±10% around the recited numerical value. When a range is specified, the range includes all values therebetween, such as increments of 0.1%.

[0060] Hereinafter, the term "combination" includes mixtures as well as two or more stacked structures.

[0061] Hereinafter, a stretchable device according to some example embodiments is described with reference to the accompanying drawings.

[0062] Figure 1 is a schematic view showing an example of a pixel arrangement of a stretchable device according to some example embodiments.

[0063] Referring to Figure 1 , the stretchable device 200 may include a plurality of pixels PX, and the plurality of pixels PX may be repeatedly arranged in a matrix form along rows and / or columns. The stretchable device 200 may include a group of unit pixels "A" arranged repeatedly, and the plurality of pixels PX included in the group of unit pixels "A" may have an arrangement such as 3×1, 2×2, 3×3, or 4×4, but is not limited thereto. In some example embodiments, the arrangement of the pixels PX may be a Bayer matrix, a PenTile matrix, and / or a diamond matrix, but is not limited thereto.

[0064] In some example embodiments, each pixel PX may include a unit device 150A, and each unit device 150A may independently display red R, green G, blue B, or a combination thereof such as white W. In some example embodiments, the group of unit pixels "A" may have an arrangement such as RGB, RGBG, or RGBW, but is not limited thereto.

[0065] In some example embodiments, each pixel PX may include a unit device 150A, and each unit device 150A may be configured to selectively absorb or sense light in the red wavelength spectrum R, light in the green wavelength spectrum G, light in the blue wavelength spectrum B, light in the entire visible light wavelength spectrum W, or light in the infrared wavelength spectrum IR. In some example embodiments, the group of unit pixels "A" may have an arrangement such as RGB, RGBG, RGBW, or RGBIR, but is not limited thereto. In some example embodiments, for example, as Figure 1As shown, each individual pixel PX can be defined as an individual unit device 150A. As Figure 2 shown, in some example embodiments, each individual pixel PX can be defined as an individual portion of a stretchable device having a horizontal boundary defined by an individual opening 161, and includes some or all of the stretchable device that vertically overlaps (e.g., overlaps in a direction perpendicular to the substrate 110) the individual opening 161. As described herein, the horizontal direction can refer to a direction extending parallel to the substrate 110, and the vertical direction can refer to a direction extending perpendicular to the substrate 110.

[0066] The unit devices 150A can be repeatedly arranged along rows and / or columns to form a unit device array 150.

[0067] In the drawings, although all pixels PX are depicted as having the same size, the present disclosure is not limited thereto. One or more pixels PX belonging to the unit pixel group "A" can be larger or smaller than the other pixels PX. In the drawings, although all pixels PX are depicted as having the same shape, the present disclosure is not limited thereto. One or more pixels PX belonging to the unit pixel group "A" can have a different shape from the other pixels PX.

[0068] Figure 2 is Figure 1 a cross-sectional view taken along line II-II of an example of the stretchable device, Figure 3 is a top view showing Figure 1 and Figure 2 an example of the arrangement of the first region and the second region of the substrate of the stretchable device.

[0069] Referring to Figure 2 , a stretchable device 200 according to some example embodiments includes a substrate 110, a transistor 120, a connection electrode 130, an insulating layer 140, a unit device 150A, a pixel defining layer 160, and a package 170. The package 170 can be interchangeably referred to herein as a package layer, a package structure, etc. As further shown, the package 170 can include a plurality of separate packages 170S.

[0070] The substrate 110 may be a stretchable substrate and may include an elastomer. The elastomer may include an organic elastomer, an organic-inorganic elastomer, a quasi-inorganic elastomer material, or a combination thereof. In some example embodiments, the organic elastomer or the organic-inorganic elastomer may be a substituted or unsubstituted polysiloxane (such as polydimethylsiloxane), an elastomer containing a substituted or unsubstituted butadiene moiety (such as styrene-ethylene-butene-styrene), an elastomer containing a urethane moiety, an elastomer containing an acrylic moiety, an elastomer containing an olefin moiety, or a combination thereof, but is not limited thereto. The quasi-inorganic elastomer material may include an elastic ceramic, an elastic solid metal, a liquid metal, or a combination thereof, but is not limited thereto.

[0071] Referring to Figure 3 , the substrate 110 may include regions having different stiffnesses. In some example embodiments, it may include a first region 110A having a relatively high stiffness (e.g., a first stiffness) and a second region 110B having a relatively low stiffness compared to the first region 110A (e.g., having a second stiffness, where the second stiffness is lower than the first stiffness). Here, the stiffness (e.g., the first and / or second stiffness) may represent the degree of resistance to deformation when a force is applied from the outside. The relatively high stiffness (e.g., the first stiffness) may mean a relatively large resistance to deformation, such that the deformation is small, while the relatively low stiffness (e.g., the second stiffness) may mean a relatively small resistance to deformation, such that the deformation is large.

[0072] The stiffness may be evaluated by the elastic modulus (e.g., a specific stiffness or its range may correspond to a specific elastic modulus or its range), and a high elastic modulus may mean a high stiffness, and a low elastic modulus may mean a low stiffness. In some example embodiments, the elastic modulus may be the Young's modulus at room temperature (about 25 °C). The difference between the elastic moduli of the first region 110A and the second region 110B of the substrate 110 may be about 100 times or more. The elastic modulus of the first region 110A may be about 100 times the elastic modulus of the second region 110B (e.g., the elastic modulus of the first region 110A may be greater than the elastic modulus of the second region 110B by a factor equal to or greater than about 100). The difference between the elastic modulus of the first region 110A and the elastic modulus of the second region 110B may be about 100 to 100,000 times within the above range. The elastic modulus of the first region 110A may be about 100 times to about 100,000 times the elastic modulus of the second region 110B (e.g., the elastic modulus of the first region 110A may be greater than the elastic modulus of the second region 110B by a factor equal to or greater than about 100 and less than or equal to about 100,000), but is not limited thereto. In some example embodiments, the elastic modulus of the first region 110A may be about 10 7 Pa to about 1012 Pa, the elastic modulus of the second region 110B can be greater than or equal to about 10 2 Pa and less than about 10 7 Pa, but not limited thereto. For example, the first region 110A having the first stiffness can have an elastic modulus of about 10 7 Pa to about 10 12 Pa, and the second region 110B having a second stiffness lower than the first stiffness can have an elastic modulus greater than or equal to about 10 2 Pa and less than about 10 7 Pa and an elastic modulus smaller than that of the first region 110A. Thus, it will be understood that a substrate having a first region with a first stiffness and a second region with a second stiffness lower than the first stiffness can mean a substrate having a first region with a first elastic modulus and a second region with a second elastic modulus smaller than the first elastic modulus.

[0073] The elongation rates of the first region 110A and the second region 110B of the substrate 110 can be different from each other due to the aforementioned stiffness difference, and the elongation rate of the second region 110B can be higher than that of the first region 110A. Here, the elongation rate can be the percentage change in length from the initial length to the breaking point. In some example embodiments, the elongation rate of the first region 110A of the substrate 110 can be less than or equal to about 5%, and within this range, it can be about 0% to about 5%, about 0% to about 4%, about 0% to about 3%, about 0% to about 2%, about 0% to about 1%, about 0.5% to about 5%, about 0.5% to about 4%, about 0.5% to about 3%, about 0.5% to about 2%, or about 1% to about 2%. In some example embodiments, the elongation rate of the second region 110B of the substrate 110 can be greater than or equal to about 10%, and within this range, it can be about 10% to about 1000%, about 10% to about 800%, about 10% to about 700%, about 10% to about 500%, about 10% to about 300%, about 10% to about 200%, about 10% to about 100%, about 10% to about 90%, about 10% to about 80%, about 10% to about 70%, about 10% to about 60%, about 10% to about 50%, about 10% to about 40%, about 20% to about 70%, about 20% to about 60%, about 20% to about 50%, or about 20% to about 40%. Thus, it will be understood that a substrate having a first region with a first stiffness and a second region with a second stiffness lower than the first stiffness can mean a substrate having a first region with a first elongation rate and a second region with a second elongation rate higher than the first elongation rate.

[0074] The plurality of first regions 110A of the substrate 110 may have an island shape separated from each other (e.g., a plurality of island structures separated from direct contact with each other), and may be repeatedly arranged in a matrix form along rows and / or columns to correspond to the pixels PX of the stretchable device 200. However, the arrangement of the plurality of first regions 110A of the substrate 110 is not limited thereto, and may be changed according to the arrangement of the pixels PX. The unit device 150A, which will be described later, is disposed on each first region 110A of the substrate 110.

[0075] Although at least Figures 1 to 3 The illustrated example embodiments show a stretchable device 200 in which the substrate 110 includes a number of first regions 110A and a surrounding second region 110B, but the example embodiments are not limited thereto. For example, in some example embodiments, the stretchable device may include a single first region 110A and a single second region 110B adjacent to and partially or completely surrounding the first region 110A. Such a stretchable device 200 may include a single unit device 150A on the first region 110A.

[0076] The second region 110B of the substrate 110 may be a region other than the plurality of first regions 110A, and may be continuously connected as a whole (e.g., may be a single continuous structure within the substrate 110, or a single piece of material surrounding a number of separate first regions 110A in the substrate 110). For example, in the case where the substrate 110 includes a plurality of first regions 110A (e.g., first regions 110A having an island structure and separated from direct contact with each other), the second region 110B may be between adjacent first regions 110A (e.g., the second region 110B may be a single region between some or all adjacent first regions 110A of the substrate 110). The second region 110B of the substrate 110 may be a region that provides stretchability to the stretchable device 200. Due to the relatively low stiffness and relatively high elongation rate of the second region 110B, the substrate 110 may flexibly respond to external forces or external movements such as twisting, pressing, and / or pulling, and may easily return to its original state.

[0077] In some example embodiments, the first region 110A of the substrate 110 may have a different shape from the second region 110B of the substrate 110. In some example embodiments, the first region 110A of the substrate 110 may be flat, and the second region 110B may include a two-dimensional or three-dimensional stretchable structure. In some example embodiments, the two-dimensional or three-dimensional stretchable structure may have a wave shape, a wrinkled shape, a pop-up shape, or a non-coplanar grid shape, but is not limited thereto.

[0078] In some example embodiments, the first region 110A of the substrate 110 may include a different material from the second region 110B. In some example embodiments, the first region 110A of the substrate 110 may include an inorganic material, an organic material, and / or an organic-inorganic material having a relatively high stiffness and a relatively low elongation rate, and the second region 110B of the substrate 110 may include an inorganic material, an organic material, and / or an organic-inorganic material having a relatively low stiffness and a relatively high elongation rate. In some example embodiments, the first region 110A of the substrate 110 may include an organic material (including polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylenenaphthalate, polyimide, polyamide, polyamideimide, polyethersulfone, or a combination thereof), a carbon structure (such as diamond carbon), or a combination thereof, and the second region 110B of the substrate 110 may include an organic elastomer or an organic-inorganic elastomer (including a substituted or unsubstituted polysiloxane (such as polydimethylsiloxane), an elastomer containing a substituted or unsubstituted butadiene moiety (such as styrene-ethylene-butene-styrene), an elastomer containing a urethane moiety, an elastomer containing an acrylic moiety, an elastomer containing an olefin moiety, or a combination thereof), an inorganic-like elastomeric material (such as an elastomeric ceramic, an elastomeric solid metal, a liquid metal, or a combination thereof), but is not limited thereto. In some example embodiments, the first region 110A and the second region 110B may be joined together, for example, by applying an epoxy resin, and / or may be at least partially welded together.

[0079] In some example embodiments, the first region 110A and the second region 110B of the substrate 110 may be formed of the same material (for example, may be parts of a monolithic material), and may be at least partially defined as separate regions having different stiffnesses due to different conditions such as degree of polymerization and / or degree of curing. In some example embodiments, the substrate 110 may include a first region 110A having a relatively high stiffness and a second region 110B having a relatively low stiffness, and the first region 110A and the second region 110B are formed by varying the degree of polymerization, the type and content of a curing agent, and / or the curing temperature based on polydimethylsiloxane (for example, by varying the application of one or more curing agents and / or varying the curing temperature over different regions of a monolithic polydimethylsiloxane material).

[0080] The transistor 120 and the connection electrode 130 are formed on the substrate 110. The transistor 120 may be on the first region 110A of the substrate 110, on the second region 110B of the substrate 110, or on both the first region 110A and the second region 110B of the substrate 110. The connection electrode 130 may be on the first region 110A of the substrate 110, on the second region 110B of the substrate 110, or on both the first region 110A and the second region 110B of the substrate 110. When the transistor 120 is on the second region 110B of the substrate 110, the transistor 120 may be a stretchable transistor.

[0081] One or two or more transistors 120 may be included in each pixel PX and may be connected to a plurality of signal lines (not shown). The plurality of signal lines may include a gate line for transmitting a gate signal (or a scan signal), a data line for transmitting a data signal, and a driving voltage line for transmitting a driving voltage. At least a portion of the plurality of signal lines may be stretchable wirings.

[0082] In some example embodiments, the transistor 120 may include a switching transistor and / or a driving transistor. The switching transistor may be electrically connected to the gate line and the data line and may include a first gate electrode connected to the gate line, a first source electrode connected to the data line, a first drain electrode facing the first source electrode, and a first semiconductor electrically connected to the first source electrode and the first drain electrode, respectively. The driving transistor may include a second gate electrode electrically connected to the first drain electrode, a second source electrode connected to the driving voltage line, a second drain electrode facing the second source electrode, and a second semiconductor electrically connected to the second source electrode and the second drain electrode, respectively. In some example embodiments, the first semiconductor and the second semiconductor may each include a semiconductor material and an elastomer. In some example embodiments, the first semiconductor and the second semiconductor may each include an organic semiconductor material and an elastomer.

[0083] The connection electrode 130 may be electrically connected to a plurality of common electrodes 152A to be described later and may be an electrode to which a common voltage is applied for the operation of the unit device 150A. The connection electrode 130 may be on the second region 110B of the substrate 110, or may be disposed on both the first region 110A and the second region 110B of the substrate 110. The connection electrode 130 may be a single continuous electrode that is connected to each of the plurality of common electrodes 152A (e.g., the connection electrode 130 may be a monolithic material). As shown at least Figure 1 as shown, the connection electrode 130 may have a wavy shape such that although at least Figure 2The cross-sectional view shown shows separate portions of the connection electrode 130 connected to separate common electrodes 152A, but the separate portions of the connection electrode 130 are portions of a single continuous (e.g., monolithic) connection electrode 130 that are connected (e.g., electrically connected) to each common electrode 152A.

[0084] The connection electrode 130 can be a stretchable electrode, and in some example embodiments, can include a stretchable conductor or can have a stretchable wavy shape. In some example embodiments, the stretchable conductor can include conductive nanostructures, such as conductive nanoparticles, conductive nanosheets, conductive nanowires, conductive nanotubes, or combinations thereof, such as nanoparticles, nanosheets, nanowires, nanotubes, or combinations thereof that include low-resistance conductors (such as silver, gold, copper, aluminum, etc.) or carbon conductors (such as silver nanoparticles, silver nanosheets, silver nanowires, silver nanotubes, graphene, graphite, or combinations thereof), but is not limited thereto. When the connection electrode 130 has a stretchable wavy shape, the connection electrode 130 can include a low-resistance conductor, such as silver, gold, copper, aluminum, an alloy thereof, or a combination thereof.

[0085] The insulating layer 140 is formed on the transistor 120 and the connection electrode 130. The insulating layer 140 can include an organic insulating material, an inorganic insulating material, or an organic-inorganic insulating material, and in some example embodiments, can include: an inorganic insulating material such as silicon oxide, silicon nitride, or silicon oxynitride; an organic insulating material such as polyimide; or an organic-inorganic insulating material such as polyorganosiloxane or polyorganosilazane. The insulating layer 140 can be a stretchable insulating layer, and in some example embodiments can include an elastomer. The elastomer can include the aforementioned organic elastomers, organic-inorganic elastomers, inorganic-like elastomeric materials, or combinations thereof, but is not limited thereto. The insulating layer 140 has a plurality of contact holes 142 that expose the transistor 120.

[0086] The unit device array 150 is formed on the insulating layer 140. The unit device array 150 can include a plurality of unit devices 150A arranged repeatedly along rows and / or columns, and each of the plurality of unit devices 150A can be disposed on a first region 110A of the substrate 110. In the case where the substrate 110 includes a plurality of first regions 110A, the unit device array 150 can include a plurality of unit devices 150A on separate respective first regions 110A of the plurality of first regions 110A of the substrate 110. Each unit device 150A can be a diode or a transistor in some example embodiments.

[0087] The unit device array 150 may include: a plurality of pixel electrodes 151A, which are respectively isolated on a plurality of first regions 110A of the substrate 110 (for example, respectively isolated on separate respective first regions 110A of the substrate 110); a plurality of common electrodes 152A, which are respectively isolated on a plurality of first regions 110A of the substrate 110 (for example, respectively isolated on separate respective first regions 110A of the substrate 110) and face the plurality of pixel electrodes 151A (for example, each individual common electrode 152A faces an individual pixel electrode 151A among the plurality of pixel electrodes 151A); and a plurality of active layers 153A, which are between the plurality of pixel electrodes 151A and the plurality of common electrodes 152A (for example, each individual active layer 153A is between an individual pixel electrode 151A and an individual common electrode 152A) and on the plurality of first regions 110A of the substrate 110 (for example, each individual active layer 153A is on an individual first region 110A among the plurality of first regions 110A).

[0088] The pixel electrodes 151A may be arranged repeatedly along rows and / or columns to form a pixel electrode array, the common electrodes 152A may be arranged repeatedly along rows and / or columns to form a common electrode array, and the active layers 153A may be arranged repeatedly along rows and / or columns to form an active layer array.

[0089] The unit device 150A including the pixel electrode 151A, the common electrode 152A, and the active layer 153A may be on the first region 110A of the substrate 110 having relatively high stiffness, and the unit device 150A may not be on the second region 110B of the substrate 110 having relatively low stiffness. Accordingly, the unit device 150A including the pixel electrode 151A, the common electrode 152A, and the active layer 153A is substantially not affected by external forces or external movements such as torsion, pressing, and / or pulling of the stretchable device 200. Accordingly, materials for improving the performance of the pixel electrode 151A, the common electrode 152A, and the active layer 153A can be freely selected, and damage or breakage caused by stretching deformation due to external forces or external movements can be reduced or prevented.

[0090] Each of the pixel electrode 151A and the common electrode 152A can be independently made of a low-resistance conductor, and in some example embodiments, can be independently made of a metal, a conductive oxide, and / or a conductive organic material. In some example embodiments, the pixel electrode 151A and the common electrode 152A can be independently made of: a metal such as aluminum, silver, gold, copper, magnesium, nickel, molybdenum, or an alloy thereof; a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc tin oxide (ZTO), aluminum tin oxide (ATO), and aluminum zinc oxide (AZO); and / or a conductive organic material such as polyacetylene (PA), polypyrrole (PPy), polythiophene (PT), polyaniline (PA), and poly(3,4-ethylenedioxythiophene).

[0091] The pixel electrode 151A and the common electrode 152A can be a transparent or opaque electrode, respectively. The transparent electrode can have a transmittance greater than or equal to about 80%, and can include a metal thin film or the aforementioned conductive oxide, conductive organic material, and / or carbon conductor. In some example embodiments, the opaque electrode can have a transmittance less than about 10% or a reflectance greater than or equal to about 5%, and can include a metal.

[0092] Each pixel electrode 151A can be electrically connected to a transistor 120 in a corresponding pixel PX, and can be independently driven for the corresponding pixel PX. A plurality of common electrodes 152A are electrically connected to a connection electrode 130, and based on a specific voltage (in some example embodiments, a reference voltage) being applied to the connection electrode 130 connected to each common electrode 152A, a common voltage (e.g., the same voltage) can be applied to each common electrode 152A. Thus, it will be understood that the stretchable device 200 according to some example embodiments is configured to apply a common voltage (e.g., the same voltage) to the common electrodes 152A (e.g., applying the same voltage to the common electrodes 152A simultaneously or substantially simultaneously). It will be understood that in some example embodiments, the stretchable device 200 includes a plurality of connection electrodes 130 connected to separate groups of common electrodes 152A (e.g., a plurality of separate material blocks that can be at least partially separated from direct contact with each other), and the stretchable device 200 is configured to enable a common voltage (e.g., the same voltage) to be applied to the common electrodes 152A based on the common voltage being applied to the plurality of connection electrodes 130 (e.g., by the common voltage being applied to a single block connection circuit electrically connected to each connection electrode 130).

[0093] The active layer 153A can include a light-emitting layer or a photoelectric conversion layer.

[0094] The light-emitting layer may include an organic material, an inorganic material, an organic-inorganic material, or a combination thereof configured to emit light. In some example embodiments, it may include an organic light-emitting material, an inorganic light-emitting material, quantum dots, perovskite, or a combination thereof, but is not limited thereto.

[0095] When the light-emitting layer includes an organic light-emitting material, the unit device 150A may be an organic light-emitting diode. When the light-emitting layer includes an inorganic light-emitting material, the unit device 150A may be an inorganic light-emitting diode.

[0096] When the light-emitting layer includes quantum dots, the unit device 150A may be a quantum dot light-emitting diode. When the light-emitting layer includes perovskite, the unit device 150A may be a perovskite light-emitting diode.

[0097] The photoelectric conversion layer may be configured to selectively absorb at least a portion of the light in the wavelength spectrum and convert the absorbed light into an electrical signal, and may be configured to absorb, for example, light in the blue wavelength spectrum (hereinafter referred to as "blue light"), light in the green wavelength spectrum (hereinafter referred to as "green light"), light in the red wavelength spectrum (hereinafter referred to as "red light"), and light in the infrared wavelength spectrum (hereinafter referred to as "infrared light") and convert the absorbed light into an electrical signal.

[0098] In some example embodiments, the photoelectric conversion layer may be configured to selectively absorb one of blue light, green light, red light, and infrared light, and may convert the absorbed light into an electrical signal. Here, the selective absorption of one of blue light, green light, red light, and infrared light means that the absorption spectrum has a maximum absorption wavelength (λ max ) in a wavelength spectrum of greater than or equal to about 380 nm and less than about 500 nm, about 500 nm to about 600 nm, greater than about 600 nm and less than or equal to about 700 nm, or greater than about 700 nm and less than or equal to about 3000 nm, and the absorption spectrum in the corresponding wavelength spectrum is significantly higher than the absorption spectra in other wavelength spectra. Here, "significantly high" may mean that about 70% to about 100%, about 75% to about 100%, about 80% to about 100%, about 85% to about 100%, about 90% to about 100%, or about 95% to about 100% of the total area of the absorption spectrum may, for example, belong to the corresponding wavelength spectrum.

[0099] The optoelectronic conversion layer may include a p-type semiconductor and an n-type semiconductor to form a pn junction. At least one of the p-type semiconductor and the n-type semiconductor may be a light-absorbing material, and at least one of the p-type semiconductor and the n-type semiconductor may be a wavelength-selective light-absorbing material. In some exemplary embodiments, at least one of the p-type semiconductor and the n-type semiconductor may have a maximum absorption wavelength (λ max ) in a wavelength spectrum of greater than or equal to about 380 nm and less than 500 nm, about 500 nm to about 600 nm, greater than about 600 nm and less than or equal to about 700 nm, or greater than about 700 nm and less than or equal to about 3000 nm. The p-type semiconductor and the n-type semiconductor may have peak absorption wavelengths (λ max ) in the same or different wavelength spectra. The p-type semiconductor and the n-type semiconductor may be an organic material, an inorganic material, or an organic-inorganic material, respectively. In some exemplary embodiments, at least one of the p-type semiconductor and the n-type semiconductor may be an organic material.

[0100] The unit device 150A may further include an auxiliary layer (not shown) between the pixel electrode 151A and the active layer 153A and / or between the common electrode 152A and the active layer 153A. In some exemplary embodiments, the auxiliary layer may be a charge auxiliary layer, a light-emitting auxiliary layer, and / or an absorption auxiliary layer. In some exemplary embodiments, the charge auxiliary layer may be one or more layers selected from a hole injection layer, a hole transport layer, an electron blocking layer, an electron injection layer, an electron transport layer, and a hole blocking layer. The auxiliary layers may each independently include an organic material, an inorganic material, or an organic-inorganic material.

[0101] The pixel defining layer 160 may be formed on the entire surface of the insulating layer 140 and may be a layer having a plurality of openings 161 and vias 162 (see Figure 10) continuous film. As shown, the pixel defining layer 160 can be at least partially between adjacent unit devices 150A of the unit device array 150 (e.g., between adjacent unit devices 150A of the unit device array 150 in a horizontal direction extending parallel to the substrate 110). A plurality of openings 161 can be provided on the first region 110A of the substrate 110 to define each pixel PX and expose each unit device 150A. In some example embodiments, the shape and size of each pixel PX can be determined according to the shape and size of the corresponding opening 161. The plurality of via holes 162 can be channels for electrically connecting the common electrode 152A to the connection electrode 130, and can be filled with a conductor the same as or different from the conductor forming the common electrode 152A. Thus, the pixel defining layer 160 can be understood as having via holes 162 corresponding to the separate individual unit devices 150A and / or separate individual pixels PX. The pixel defining layer 160 can be understood as having openings 161 corresponding to the separate individual unit devices 150A and / or corresponding to (e.g., at least partially defining) the separate individual pixels PX. As Figure 2 shown, the pixel PX can be defined by the horizontal outer boundary of the sidewall of the opening 161 (e.g., the inclined sidewall) (e.g., the edge between the sidewall of the opening 161 and the upper surface of the pixel defining layer 160). In some example embodiments, the pixel PX can be defined by the horizontal inner boundary of the sidewall of the opening 161 (e.g., the edge between the sidewall of the opening 161 and the upper surface of the corresponding common electrode 151A exposed by each opening 161).

[0102] It will be understood that in some example embodiments, there may be no pixel defining layer 160 in the stretchable device 200. In some example embodiments, when there is no pixel defining layer 160, the aforementioned openings 161 can be at least partially formed in the upper surface of the insulating layer 140 (e.g., as depressions) to define the pixel PX, and at least the pixel electrode 151A and / or all the unit devices 150A can be located thereon (e.g., separate unit devices 150A on separate depressions in the insulating layer 140), and the via holes 162 and the contact holes 142 can extend through the insulating layer 140 as described and shown in the drawings.

[0103] The pixel defining layer 160 can include an organic insulating material, an inorganic insulating material, and / or an organic-inorganic insulating material, such as: an inorganic insulating material such as silicon oxide, silicon nitride, or silicon oxynitride; an organic insulating material such as polyimide; or an organic-inorganic insulating material such as polyorganosiloxane or polyorganosilazane. The pixel defining layer 160 can be a stretchable insulating layer, and in some example embodiments can include an elastomer. The elastomer can include the aforementioned organic elastomer, organic-inorganic elastomer, inorganic-like elastomeric material, or a combination thereof, but is not limited thereto.

[0104] The encapsulant 170 can be separately isolated on the first region 110A of the substrate 110. Each encapsulant 170 can individually cover the corresponding unit device 150A or the corresponding pixel PX, such that the encapsulant 170 covers the unit device array 150. Restated, in the case where the substrate 110 includes a plurality of first regions 110A, the encapsulant 170 can include a plurality of separate encapsulants 170S (which can be separated from direct contact with each other), where the plurality of encapsulants 170S are on respective individual unit devices 150A and are on respective separate first regions 110A among the plurality of first regions 110A and overlap with respective separate first regions 110A among the plurality of first regions 110A in a vertical direction extending perpendicular to the substrate 110. Thus, as Figure 2 shown, the plurality of encapsulants 170S can cover respective individual unit devices 150A to protect them from vertical exposure. Although the side edges of the common electrode 152A are exposed by the encapsulant 170S as Figure 2 shown, it will be understood that in some example embodiments, the encapsulant 170S can completely cover respective individual underlying unit devices 150A in both the vertical direction and the side direction, including the side edges of their respective common electrodes 152A (e.g., as shown in at least Figure 16 ). Adjacent encapsulants 170S are separated from each other (e.g., separated from direct contact with each other) and the second region 110B of the substrate 110 is disposed therebetween (e.g., the plurality of encapsulants 170S may not vertically overlap with the second region 110B, e.g., may not overlap with the second region 110B in a direction extending perpendicular to the substrate 110). In some example embodiments, the encapsulant 170 (e.g., the plurality of encapsulants 170S) can have the same planar shape as the common electrode 152A.

[0105] As described above, the encapsulant 170 is formed to individually cover each unit device 150A or each pixel PX on the first region 110A of the substrate 110 (e.g., the encapsulant 170 can include a plurality of encapsulants 170S separated from direct contact with each other, and each individual encapsulant 170S is configured to cover an individual unit device 150A or pixel PX), so that the encapsulant 170 can be substantially unaffected by external forces or external movements such as torsion, pressing, and / or pulling of the stretchable device 200. Thus, materials for improving the performance of the encapsulant 170 can be freely selected, and damage or destruction caused by stretching deformation due to external forces or external movements can be reduced or prevented.

[0106] In some example embodiments, the encapsulant 170 may include organic materials, inorganic materials, and / or organic / inorganic materials, and may include one or more layers. In some example embodiments, the encapsulant 170 may include oxides, nitrides, and / or oxynitrides, such as oxides, nitrides, and / or oxynitrides including aluminum (Al), titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), silicon (Si), or combinations thereof. In some example embodiments, the encapsulant 170 may include layers having different refractive indices stacked alternately. In some example embodiments, a first layer and a second layer may be stacked alternately, the first layer including a first material selected from oxides, nitrides, and oxynitrides, and the second layer including a second material selected from oxides, nitrides, and oxynitrides having a refractive index higher than that of the first material.

[0107] The encapsulant 170 may protect the unit device 150A and effectively block or prevent the inflow of oxygen, moisture, and / or contaminants from the outside. In some example embodiments, when the stretchable device 200 is included in a display device or a biological device attached to a living body, the encapsulant 170 may prevent biological secretions such as sweat from flowing into the stretchable device 200, thereby preventing deterioration of the stretchable device 200.

[0108] In this way, the stretchable device 200 according to some example embodiments includes a substrate 110 that includes a first region 110A having a relatively high stiffness and a relatively low elongation rate and a second region 110B having a relatively low stiffness and a relatively high elongation rate, and thus can flexibly respond to external forces or external movements such as torsion, pressing, and / or pulling in a specific (or alternatively, predetermined) direction.

[0109] In addition, since the stretchable device 200 according to some example embodiments includes the unit device 150A disposed on the first region 110A of the substrate 110, materials for improving the performance of the components of the unit device 150A can be freely selected, and when the substrate 110 is stretched by an external force or an external movement, the unit device 150A can be prevented from being stretched and deformed and thus damaged or destroyed.

[0110] In addition, when the substrate 110 is stretched by an external force or an external movement, by separately isolating the common electrode 152A and the encapsulant 170 in each unit device 150A rather than continuously, the stretchable device 200 according to some example embodiments can prevent or reduce damage or destruction of the common electrode 152A and the encapsulant 170. Therefore, materials for improving the performance of the common electrode 152A and the encapsulant 170 can be freely selected, and thus the stretchable device 200 can be effectively realized without degrading the performance of the common electrode 152A and the encapsulant 170.

[0111] In the following, examples of a method of manufacturing a stretchable device according to some example embodiments are described with reference to the accompanying drawings. Figure 1 and Figure 2 of the stretchable device are given.

[0112] Figure 4 、 Figure 5 、 Figure 6 、 Figure 7 、 Figure 8 、 Figure 9 、 Figure 10 、 Figure 11 and Figure 12 are cross-sectional views sequentially showing examples of a method of manufacturing a stretchable device according to some example embodiments. Figure 1 and Figure 2 of the stretchable device.

[0113] In conjunction with Figure 3 reference is made to Figure 4 , a substrate 110 is prepared, which includes a first region 110A having a relatively high stiffness and a relatively low elongation rate and a second region 110B having a relatively low stiffness and a relatively high elongation rate. The first region 110A of the substrate 110 may be repeatedly arranged in an island shape along rows and / or columns and disposed at positions where the unit devices 150A will be formed. The second region 110B of the substrate 110 may be a region other than the first region 110A and may be continuously connected to the first region 110A.

[0114] The first region 110A and the second region 110B of the substrate 110 may be formed by various methods for changing stiffness and elongation rate, but are not limited to a specific method.

[0115] In some example embodiments, after setting the positions for the first region 110A and the second region 110B of the substrate 110, a two-dimensional or three-dimensional stretchable structure may be disposed at the position for the second region 110B of the substrate 110. In some example embodiments, the two-dimensional or three-dimensional stretchable structure may have a wavy shape, a wrinkled shape, a pop-up shape, or a non-coplanar grid shape, but is not limited thereto. In some example embodiments, the two-dimensional or three-dimensional structure may be achieved by imprinting or lithography, but is not limited thereto.

[0116] In some example embodiments, after preparing a substrate 110 including an elastomer having a relatively low stiffness and a relatively high elongation rate, a structure including a material having a relatively high stiffness and a relatively low elongation rate is selectively disposed at a position where a first region 110A will be formed to provide a plurality of first regions 110A. In some example embodiments, the material having a relatively high stiffness and a relatively low elongation rate may be an organic material (such as polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylenenaphthalate, polyimide, polyamide, polyamideimide, polyethersulfone, or a combination thereof), a carbon structure (such as diamond carbon), but is not limited thereto. Here, the region where the structure is not disposed may be a second region 110B of the substrate 110.

[0117] In some example embodiments, after setting positions for forming the first region 110A and the second region 110B of the substrate 110, the type, degree of polymerization, and / or degree of curing of the base polymer may be changed to form the first region 110A and the second region 110B having different stiffnesses and elongation rates at positions where the first region 110A and the second region 110B of the substrate 110 will be formed.

[0118] In some example embodiments, the stiffness of the substrate 110 may be different by using polydimethylsiloxane (PDMS) as a base polymer but changing the degree of polymerization of the polymer chains composed of Si-O bonds.

[0119] In some example embodiments, the stiffness of the substrate 110 may be different by using polydimethylsiloxane (PDMS) as a base polymer but changing the type and number of side chains linked to polydimethylsiloxane (PDMS).

[0120] In some example embodiments, the stiffness of the substrate 110 may be different by using polydimethylsiloxane (PDMS) as a base polymer but adjusting the composition ratio of polydimethylsiloxane and a curing agent. As the amount of the curing agent increases, the stiffness may increase. In some example embodiments, the amount of the curing agent relative to the amount of the base polymer at the position where the first region 110A of the substrate 110 will be formed may be greater than the amount of the curing agent relative to the amount of the base polymer at the position where the second region 110B of the substrate 110 will be formed.

[0121] In some example embodiments, the stiffness of the substrate 110 can vary by using polydimethylsiloxane (PDMS) as the base polymer but changing the curing temperature and / or time. As the curing temperature is higher and the curing time is longer, the stiffness can be higher. In some example embodiments, the curing temperature at the location where the first region 110A of the substrate 110 will be formed can be higher than the curing temperature at the location where the second region 110B of the substrate 110 will be formed. In some example embodiments, the curing time at the location where the first region 110A of the substrate 110 will be formed can be longer than the curing time at the location where the second region 110B of the substrate 110 will be formed.

[0122] Referring Figure 5 , a plurality of signal lines (not shown), transistors 120, and connection electrodes 130 are formed on the substrate 110. The connection electrodes 130 can be formed together with the signal lines, but are not limited thereto.

[0123] Referring Figure 6 , an insulating layer 140 is formed on the entire surface of the substrate 110. The insulating layer 140 can be formed by coating, deposition, imprinting, etc., but is not limited thereto. The insulating layer 140 has contact holes 142 that expose the transistors 120 of each pixel (PX).

[0124] Referring Figure 7 , a conductor for the pixel electrode is formed on the insulating layer 140, and then the conductor is lithographed to form pixel electrodes 151A. Each pixel electrode 151A is formed isolatedly in the first region 110A of the substrate 110 and is electrically connected to the transistor 120 through the contact holes 142 of the insulating layer 140.

[0125] Referring Figure 8 , an organic layer is formed on the entire surface of the insulating layer 140 and the organic layer is patterned to form a pixel defining layer 160 having a plurality of openings 161 that expose the pixel electrodes 151A.

[0126] Referring Figure 9 , an active layer 153A is formed on each pixel electrode 151A. The active layer 153A can be formed by coating, depositing, or imprinting a light-emitting material or a light-absorbing material, but is not limited thereto.

[0127] In some example embodiments, the active layer 153A may be formed by arranging side by side or stacking light-emitting materials configured to emit light in different wavelength spectra in a vertical direction. In some example embodiments, among the first pixel, the second pixel, and the third pixel arranged adjacent to each other, the active layer 153A of the first pixel may include a light-emitting material configured to emit light in a red wavelength spectrum, the active layer 153A of the second pixel may include a light-emitting material configured to emit light in a green wavelength spectrum, and the active layer 153A of the third pixel may include a light-emitting material configured to emit light in a blue wavelength spectrum.

[0128] In some example embodiments, the active layer 153A may be formed by arranging side by side (e.g., arranged parallel to the substrate 110) or stacking light-absorbing materials configured to absorb light in different wavelength spectra in a vertical direction (e.g., in a direction perpendicular to the substrate 110). In some example embodiments, among the first pixel, the second pixel, and the third pixel arranged adjacent to each other, the active layer 153A of the first pixel may include a light-absorbing material configured to absorb light in a red wavelength spectrum, the active layer 153A of the second pixel may include a light-absorbing material configured to absorb light in a green wavelength spectrum, and the active layer 153A of the third pixel may include a light-absorbing material configured to absorb light in a blue wavelength spectrum.

[0129] Referring to Figure 10 , via holes 162 exposing the connection electrode 130 are formed in the pixel defining layer 160 and the insulating layer 140. Subsequently, a conductive layer 152 for a common electrode is formed on the entire surfaces of the pixel defining layer 160 and the active layer 153A. The conductive layer 152 for the common electrode is electrically connected to the connection electrode 130 through the via holes 162 in the pixel defining layer 160 and the insulating layer 140. Accordingly, each common electrode 152A to be formed later may be connected to the connection electrode 130 through separate via holes 162 (e.g., via holes corresponding to the respective unit devices 150A including the common electrode 152A) in the pixel defining layer 160 and the insulating layer 140.

[0130] Referring to Figure 11 , a film 170-1 for an encapsulant is formed on the entire surface of the conductive layer 152 for the common electrode. The film 170-1 for the encapsulant may be formed by a coating, deposition, or imprinting method, but is not limited thereto.

[0131] Referring to Figure 12 , photolithography is performed on the film 170-1 for the encapsulant to form an encapsulant 170 including a plurality of encapsulants 170S respectively isolated on a first region 110A of the substrate 110. The encapsulants 170S may individually cover each unit device 150A, and adjacent encapsulants 170S may be separated from each other with a second region 110B of the substrate 110 therebetween.

[0132] Referring to Figure 2 , using the encapsulant 170 as a mask, a photolithography process is performed on the conductive layer 152 for the common electrode to form a plurality of common electrodes 152A that are respectively isolated on the first region 110A of the substrate 110. Here, since the encapsulant 170 is used as a mask to form the common electrodes 152A, the encapsulant 170 and the common electrodes 152A can have substantially the same planar shape. The photolithography process can be wet etching or dry etching.

[0133] Hereinafter, examples of methods for manufacturing Figure 1 and Figure 2 a stretchable device are shown.

[0134] Figure 13 , Figure 14 , Figure 15 and Figure 16 are cross-sectional views sequentially showing examples of methods for manufacturing Figure 1 and Figure 2 a stretchable device according to some example embodiments.

[0135] First, as Figures 4 to 9 shown, transistors 120, connection electrodes 130, insulating layer 140, pixel defining layer 160, pixel electrodes 151A, and active layer 153A are formed on the substrate 110 having a first region 110A and a second region 110B as described above.

[0136] Referring to Figure 13 and Figure 14 , a mask 70 is disposed over the active layer 153A. The mask 70 can have fine opening portions 70A and fine blocking portions 70B, and in some example embodiments, can be a fine metal mask FMM. The fine opening portions 70A of the mask 70 can have substantially the same dimensions as the dimensions of the common electrodes 152A to be formed later. After a source for supplying a conductor is disposed on the mask 70, the conductor is selectively deposited through the fine opening portions 70A of the mask 70 on the active layer 153A and a part of the pixel defining layer 160 adjacent thereto to form the common electrodes 152A. Subsequently, the mask 70 is removed.

[0137] Referring to Figure 15 , a thin film 170-1 for the encapsulant is formed on the entire surfaces of the common electrodes 152A and the pixel defining layer 160. The thin film 170-1 for the encapsulant can be formed by a method such as coating, deposition, or imprinting, but is not limited thereto.

[0138] Referring to Figure 16, the thin film 170-1 for the encapsulant is lithographed to form an encapsulant 170 including a plurality of encapsulant units 170S respectively isolated on the first region 110A of the substrate 110. The encapsulant units 170S can individually cover each unit device 150A, and adjacent encapsulant units 170S can be separated from each other with the second region 110B of the substrate 110 therebetween.

[0139] In the following, another example of a stretchable device according to some example embodiments is described.

[0140] Figure 17 is according to some example embodiments Figure 1 A cross-sectional view taken along line II-II of another example of a stretchable device.

[0141] Referring to Figure 17 , and Figure 2 shown in the example embodiment, according to Figure 17 The stretchable device 200 shown in the example embodiment includes: a substrate 110 having a first region 110A and a second region 110B; transistors 120; connection electrodes 130; an insulating layer 140; a plurality of unit devices 150A, each including a pixel electrode 151A, an active layer 153A, and a common electrode 152A; a pixel defining layer 160; and an encapsulant 170.

[0142] However, in the stretchable device 200 according to Figure 17 the example embodiment shown, different from Figure 2 the example embodiment shown, the connection electrodes 130 can be disposed on the insulating layer 140, and in some example embodiments, can be disposed on the same layer as the pixel electrode 151A. The connection electrodes 130 can be electrically connected to the common electrode 152A through via holes 162 in the pixel defining layer 160.

[0143] In the following, another example of a stretchable device according to some example embodiments is described.

[0144] Figure 18 is according to some example embodiments Figure 1 A cross-sectional view taken along line II-II of another example of a stretchable device.

[0145] Referring to Figure 18 , and Figure 2 shown in the example embodiment, according to Figure 18The stretchable device 200 of the illustrated exemplary embodiment includes: a substrate 110 having a first region 110A and a second region 110B; a transistor 120; a connection electrode 130; an insulating layer 140; a plurality of unit devices 150A, each including a pixel electrode 151A, an active layer 153A, and a common electrode 152A; a pixel defining layer 160; and a package 170.

[0146] However, in the stretchable device 200 of the illustrated exemplary embodiment according to Figure 18 Unlike the illustrated exemplary embodiment, in the stretchable device 200 of the illustrated exemplary embodiment, Figure 2 the pixel defining layer 160, like the package 170, may exist separately and isolatedly on the first region 110A of the substrate 110, and is separated in each pixel PX with the second region 110B of the substrate 110 therebetween. Each individual pixel defining layer 160 has an opening 161 and a via hole 162, and its specific details are described above.

[0147] Because the stretchable device 200 of the illustrated exemplary embodiment according to Figure 18 includes the common electrode 152A, the package 170, and the pixel defining layer 160 that are separately isolated in each pixel PX on the first region 110A of the substrate 110, compared with the case where the common electrode 152A, the package 170, and / or the pixel defining layer 160 are formed continuously, when the substrate 110 is stretched by an external force or external movement, the common electrode 152A, the package 170, and the pixel defining layer 160 can be prevented from being damaged or destroyed, and thus materials for improving the performance of the common electrode 152A, the package 170, and the pixel defining layer 160 can be freely selected. Therefore, the stretchable device 200 can be effectively realized without degrading the performance of the common electrode 152A, the package 170, and the pixel defining layer 160.

[0148] Hereinafter, another example of a stretchable device according to some exemplary embodiments is described.

[0149] Figure 19 is a cross-sectional view taken along line II-II of another example of a stretchable device according to some exemplary embodiments. Figure 1

[0150] Referring to Figure 19 and, like the illustrated exemplary embodiment, according to Figure 2 the illustrated exemplary embodiment, according to Figure 19 ​The stretchable device 200 of the illustrated exemplary embodiment includes: a substrate 110 having a first region 110A and a second region 110B; a transistor 120; a connection electrode 130; an insulating layer 140; a plurality of unit devices 150A, each including a pixel electrode 151A, an active layer 153A, and a common electrode 152A; a pixel defining layer 160; and a package 170.

[0151] However, different from Figure 2 the illustrated exemplary embodiment, the stretchable device 200 according to Figure 19 the illustrated exemplary embodiment may include a package 170 continuously disposed on the entire surface of the substrate 110. The package 170 may include a cured product of a photosensitive elastomer. Here, the package 170 may include an elastomer that can be stretched together when the substrate 110 is stretched by an external force or external movement. Thus, when the substrate 110 is stretched by an external force or external movement, the package 170 can also be flexibly stretchable without breaking or being damaged, thereby effectively blocking or preventing oxygen, moisture, and / or contaminants from flowing in from the outside and thus effectively protecting the plurality of unit devices 150A. In addition, since patterning including photolithography and development of the film 170-1 for the package can be omitted in some exemplary embodiments, the process can be simplified, and the unit devices 150A thereunder can be prevented from being damaged during patterning.

[0152] In some exemplary embodiments, the package 170 may be formed of an elastomer crosslinkable by heat or light, a mixture of an elastomer and a light-reactive material sensitive to heat or light, or a combination thereof. In some exemplary embodiments, the package 170 may be formed of a photosensitive elastomer, a mixture of an elastomer and a photosensitive material, or a combination thereof. In some exemplary embodiments, the package 170 may be formed of a photosensitive elastomer capable of low-temperature treatment (e.g., a cured product of the photosensitive elastomer), and in some exemplary embodiments, may be formed of a photosensitive elastomer curable at a temperature lower than the glass transition temperature (Tg) of the substrate 110, e.g., formed of a photosensitive elastomer curable at a temperature less than or equal to about 150 °C, less than or equal to about 120 °C, less than or equal to about 100 °C, about 28 °C to about 150 °C, about 28 °C to about 120 °C, about 28 °C to about 100 °C, about 40 °C to about 150 °C, about 40 °C to about 120 °C, about 40 °C to about 100 °C, about 50 °C to about 150 °C, about 50 °C to about 120 °C, or about 50 °C to about 100 °C. In this way, the package 170 is formed of a photosensitive elastomer capable of low-temperature treatment, thereby preventing the substrate 110 made of an elastomer from being thermally damaged such as thermal expansion or thermal contraction during curing.

[0153] In some example embodiments, the photosensitive elastomer may be selected from elastomers having photosensitive functional groups and may have an elastomer as the main chain and at least one photosensitive functional group in the side chain. The photosensitive elastomer may include, for example, a substituted or unsubstituted polysiloxane (such as polydimethylsiloxane), an elastomer containing a substituted or unsubstituted butadiene moiety (such as styrene-ethylene-butene-styrene), an elastomer containing a urethane moiety, an elastomer containing an acrylic moiety, an elastomer containing an olefin moiety, or a combination thereof as the main chain of the elastomer, and includes a photosensitive functional group bonded to the main chain, such as a substituted or unsubstituted ethylene group, or a substituted or unsubstituted (meth)acrylic group. In some example embodiments, the photosensitive elastomer may be polyisoprene having an acrylic group having the following structural unit shown in Chemical Formula 1, but is not limited thereto.

[0154] [Chemical Formula 1]

[0155]

[0156] In some example embodiments, the mixture of an elastomer and a photo-responsive material sensitive to heat or light may include an elastomer selected from a substituted or unsubstituted polysiloxane (such as polydimethylsiloxane), an elastomer containing a substituted or unsubstituted butadiene moiety (such as styrene-ethylene-butene-styrene), an elastomer containing a urethane moiety, an elastomer containing an olefin moiety, or a combination thereof with an azide-containing elastomer, but is not limited thereto.

[0157] Hereinafter, another example of a stretchable device according to some example embodiments is described.

[0158] Figure 20 is a cross-sectional view taken along line II-II of another example of a stretchable device Figure 1 according to some example embodiments.

[0159] Referring to Figure 20 and, similar to the example embodiment shown in Figure 2 the stretchable device 200 according to the example embodiment shown in Figure 20 includes: a substrate 110 having a first region 110A and a second region 110B; a transistor 120; a connection electrode 130; an insulating layer 140; a plurality of unit devices 150A, each including a pixel electrode 151A, an active layer 153A, and a common electrode 152A; a pixel defining layer 160; and a package 170.

[0160] However, with respect to the stretchable device 200 according to the example embodiment shown in Figure 20 similar to Figure 2Unlike the example embodiment shown, the connection electrode 130 may be disposed on the insulating layer 140 and, in some example embodiments, may be disposed on the same layer as the pixel electrode 151A. The connection electrode 130 may be electrically connected to the common electrode 152A through a via hole 162 in the pixel defining layer 160.

[0161] In the following, another example of a stretchable device according to some example embodiments is described.

[0162] Figure 21 is according to some example embodiments Figure 1 Another example of a stretchable device taken along line II-II.

[0163] Referring to Figure 21 and Figure 2 As in the example embodiment shown, according to Figure 21 The stretchable device 200 according to the example embodiment shown includes: a substrate 110 having a first region 110A and a second region 110B; a transistor 120; a connection electrode 130; an insulating layer 140; a plurality of unit devices 150A, each including a pixel electrode 151A, an active layer 153A, and a common electrode 152A; a pixel defining layer 160; and a package 170.

[0164] However, in the stretchable device 200 according to Figure 21 the example embodiment shown, unlike Figure 2 the example embodiment shown, the pixel defining layer 160 is separately isolated on the first region 110A of the substrate 110 and is separated in each pixel PX with the second region 110B of the substrate 110 therebetween. Each individual pixel defining layer 160 has an opening 161 and a via hole 162, and its specific details are described above.

[0165] The aforementioned stretchable device 200 can be applied to various devices that require stretchability. In some example embodiments, it can be applied to wearable devices, skin-like devices, large-area conformal displays, smart clothing, etc., but is not limited thereto.

[0166] In some example embodiments, the aforementioned stretchable device 200 may be included in a skin-type display panel.

[0167] Figure 22 is a schematic view showing an example of a skin-type display panel according to some example embodiments.

[0168] The skin-type display panel 300A may be an ultra-thin display panel and may be attached to a part of a living body such as a hand. The skin-type display panel 300A may display specific (or alternatively, predetermined) information such as various characters and / or images. In some example embodiments, the skin-type display panel 300A may include an inorganic light-emitting diode, a micro light-emitting diode, an organic light-emitting diode, a quantum dot light-emitting diode, or a perovskite light-emitting diode, but is not limited thereto.

[0169] In some example embodiments, the stretchable device 200 may be included in the sensor. As Figures 23 - 24 shown, the sensor may be a biosensor, but the example embodiments are not limited thereto.

[0170] Figure 23 and Figure 24 are schematic views showing examples of biosensors according to some example embodiments.

[0171] The biosensor 300B may be an attachable biosensor and may be attached to the surface of a living body (such as the skin), a living body (such as an organ), or an indirect mechanism for contacting a living body (such as clothing) to detect and measure biological information such as biological signals. In some example embodiments, the biosensor 300B includes an electroencephalogram (EGG) sensor, an electrocardiogram (ECG) sensor, a blood pressure (BP) sensor, an electromyogram (EMG) sensor, a blood glucose (BG) sensor, a photoplethysmography (PPG) sensor, an accelerometer, a radio frequency identification (RFID) antenna, an inertial sensor, an activity sensor, a strain sensor, a motion sensor, or a combination thereof, but is not limited thereto. The biosensor 300B may be attached to a living body in a very thin patch type or band type, so that biological information can be monitored in real time.

[0172] Figure 25 are schematic views showing examples of the operation of biosensors according to some example embodiments.

[0173] Referring to Figure 25 , the biosensor 300B includes a light-emitting diode 310 and a photoelectric conversion device 320. In some example embodiments, the light-emitting diode 310 may include an inorganic light-emitting diode, an organic light-emitting diode, or a micro light-emitting diode. In some example embodiments, the photoelectric conversion device 320 may include a photodiode or a photoelectric conversion layer.

[0174] The light-emitting diode 310 can be configured to emit a first light L1 (e.g., light having a first wavelength spectrum) for sensing a biological signal. The light-emitting diode 310 can be, for example, an infrared light-emitting diode configured to emit the first light (L1) in the infrared wavelength region (e.g., wavelength spectrum), or a visible light-emitting diode configured to emit the first light (L1) in the visible wavelength region. The first light (L1) emitted from the light-emitting diode 310 can be reflected by an object 400 (e.g., a body such as skin or blood vessels) or absorbed into the object 400. In some example embodiments, the aforementioned stretchable device 200 can be included in the light-emitting diode 310.

[0175] The photoelectric conversion device 320 can be configured to sense a second light L2 reflected by the object 400 from the first light (L1) emitted from the light-emitting diode 310, and thus convert the second light (L2) into an electrical signal. Restated, the photoelectric conversion device 320 can be configured to sense the second light (L2) based on the reflection of the first light (L1) by an object such as the object 400. The electrical signal converted from the reflected second light (L2) can include biometric information. The electrical signal including biometric information can be transmitted to a sensor integrated circuit (IC) (not shown) or a processor (not shown). In some example embodiments, the aforementioned stretchable device 200 can be included in the photoelectric conversion device 320.

[0176] In some example embodiments, the aforementioned stretchable device 200 can be included in the light-emitting diode 310 and the photoelectric conversion device 320, respectively. Thus, it will be understood that at least one of the light-emitting diode 310 and the photoelectric conversion device 320 can include the stretchable device 200.

[0177] As an example, the biosensor 300B can be a photoplethysmography (PPG) sensor, and the biological information can include heart rate, oxygen saturation, stress, arrhythmia, blood pressure, etc., and can be obtained by analyzing the waveform of the electrical signal.

[0178] In some example embodiments, the biosensor 300B can be an electromyogram (EMG) sensor or a strain sensor attached to a joint for rehabilitation treatment of patients with joint and muscle problems. The electromyogram (EMG) sensor or the strain sensor can be attached to a desired position to quantitatively measure muscle movement or joint movement to obtain data required for rehabilitation.

[0179] The aforementioned skin-type display panel or biosensor can be included in various electronic devices, and the electronic device can further include a processor (not shown) and a memory (not shown).

[0180] Figure 26Schematic diagram of an electronic device according to some example embodiments. Figure 26 The illustrated electronic device 2600 can be an electronic device according to any example embodiment.

[0181] Referring Figure 26 , the electronic device 2600 includes a processor 2620, a memory 2630, a sensor 2640, and a display device 2650 electrically connected via a bus 2610. The sensor 2640 can be any sensor according to any example embodiment. The display device 2650 can be any display panel according to any example embodiment. In Figure 26 the illustrated example embodiment, the electronic device 2600 can include both the sensor 2640 and the display device 2650, but the example embodiment is not limited thereto: in some example embodiments, the electronic device 2600 can include one of the sensor 2640 and the display device 2650.

[0182] In some example embodiments, some or all components of the electronic device 2600 can include a stretchable device according to any example embodiment or be included in a stretchable device according to any example embodiment. For example, in some example embodiments, the electronic device 2600 can include a stretchable device 200 that includes at least one of the sensor 2640 and the display device 2650, and the memory 2630, the processor 2620, and the bus 2610 can be on a substrate 110 of the stretchable device 200 and be coupled to the stretchable device 200, for example, based on (a plurality of) connection electrodes 130, coupled to the bus 2610, coupled to the processor 2620 independently of the bus 2610, etc., to a unit device array 150 of the stretchable device 200. In some example embodiments, the stretchable device 200 can be limited to the sensor 2640 and / or the display device 2650 included in the electronic device 2600, where the bus 2610, the memory 2630, and the processor 2620 are external to the stretchable device 200 and are coupled thereto (e.g., via the bus 2610), thereby establishing the electronic device 2600.

[0183] The processor 2620 can execute a stored program and thus perform at least one function, including controlling the sensor 2640 and / or displaying an image on the display device 2650. The processor 2620 can generate an output.

[0184] Although the inventive concept has been described in connection with currently considered actual example embodiments, it will be understood that the inventive concept is not limited to the above example embodiments. Instead, the inventive concept is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

[0185] This application claims priority and benefit of Korean Patent Application No. 10-2020-0032719, filed with the Korean Intellectual Property Office on March 17, 2020, the entire contents of which are incorporated herein by reference.

Claims

1. A stretchable device, comprising: A substrate, the substrate comprising a plurality of first regions having a first stiffness and second regions having a second stiffness lower than the first stiffness between adjacent first regions among the plurality of first regions; Transistors and connection electrodes on the substrate; An insulating layer on the transistors and the connection electrodes; A pixel defining layer on the entire surface of the insulating layer, the pixel defining layer being a continuous film having openings and vias, the openings corresponding to the first regions of the substrate; An array of unit devices, the array of unit devices comprising a plurality of unit devices on separate respective first regions among the plurality of first regions of the substrate, each unit device being located in each of the openings of the pixel defining layer; And A package covering the array of unit devices, Wherein the array of unit devices comprises: A plurality of pixel electrodes isolated on separate respective first regions among the plurality of first regions of the substrate, each pixel electrode being electrically connected to the transistor; A plurality of common electrodes isolated on separate respective first regions among the plurality of first regions of the substrate, each common electrode being electrically connected to the connection electrode through the via, the stretchable device being configured to apply the same voltage to the plurality of common electrodes; and A plurality of active layers on separate respective first regions among the plurality of first regions of the substrate, each active layer being between a single pixel electrode among the plurality of pixel electrodes and a single common electrode among the plurality of common electrodes.

2. The stretchable device according to claim 1, wherein the substrate comprises an elastomer.

3. The stretchable device according to claim 1, wherein the difference between the elastic modulus of the plurality of first regions of the substrate and the elastic modulus of the second regions of the substrate is 100 times or more.

4. The stretchable device according to claim 1, wherein The elongation rate of the plurality of first regions of the substrate is less than or equal to 5%, and The elongation rate of the second regions of the substrate is 10% to 100%.

5. The stretchable device according to claim 1, wherein The plurality of first regions of the substrate each have an island shape and are separated from direct contact with each other, and The second regions of the substrate are a single continuous structure in the substrate.

6. The stretchable device according to claim 1, wherein The connection electrode is on the second region of the substrate, or The connection electrode is on both the first region and the second region of the substrate.

7. The stretchable device according to claim 1, wherein the connection electrode is a stretchable electrode.

8. The stretchable device according to claim 7, wherein the connection electrode comprises a conductive nanostructure.

9. The stretchable device according to claim 1, wherein the pixel defining layer comprises an elastomer.

10. The stretchable device according to claim 1, wherein the encapsulation includes a plurality of encapsulations that are separated from direct contact with each other and are on separate respective first regions among the plurality of first regions of the substrate.

11. The stretchable device according to claim 10, wherein the plurality of encapsulations and the plurality of common electrodes have the same planar shape.

12. The stretchable device according to claim 1, wherein the encapsulation is on the entire surface of the substrate and includes a cured product of a photosensitive elastomer.

13. The stretchable device according to claim 12, wherein the photosensitive elastomer is curable at a temperature less than or equal to 100 °C.

14. The stretchable device according to claim 1, wherein each active layer is a light-emitting layer or a photoelectric conversion layer.

15. The stretchable device according to claim 14, wherein each active layer is the light-emitting layer, and the light-emitting layer includes an organic light-emitting material, an inorganic light-emitting material, quantum dots, perovskite, or a combination thereof.

16. A display panel, comprising the stretchable device according to claim 1.

17. A sensor, comprising the stretchable device according to claim 1.

18. The sensor according to claim 17, wherein the sensor includes: a light-emitting diode configured to emit a first light; and a photoelectric conversion device configured to sense a second light generated based on reflection of the first light by an object, wherein at least one of the light-emitting diode and the photoelectric conversion device includes the stretchable device.

19. The sensor according to claim 17, wherein the sensor is a biosensor.

20. An electronic device, comprising the stretchable device according to claim 1.

21. An electronic device, comprising the display panel according to claim 16.

22. An electronic device, comprising the sensor according to claim 17.

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