Optoelectronic semiconductor component having sections of a conductive layer and method for producing the same

Abstract

An optoelectronic semiconductor component (10) comprises a first semiconductor layer (110) of a first conductivity type and a second semiconductor layer (120) of a second conductivity type, a first contact structure (105), a contact layer (109) and a separation layer (108). A contact hole (123) is arranged in the separation layer (108). The optoelectronic semiconductor component further comprises a section (104) of a conductive layer (107) arranged on a side of the separation layer (108) facing away from the contact layer (109). Here, the sections (104) of the conductive layer (107) are respectively connected to the conductive material in the contact hole (123). The first contact structure (105) is connected to the contact layer (109) through a segment (104) of the conductive layer (107) and a conductive material in the contact hole (123), wherein the length of the segment (104) is respectively greater than the maximum width of the segment (104), wherein the length represents the shortest distance between the conductive material between the corresponding contact hole and the adjacent segment (104), and the width is measured perpendicular to the length.

Description

[0001] This patent application claims the priority of German patent application DE 10 2019 103 638.0, the disclosure content of which is hereby incorporated by reference.

[0002] A light emitting diode (LED) is a light emitting device based on semiconductor materials. For example, an LED includes a pn junction. When electrons and holes recombine with each other in the pn junction region, electromagnetic radiation is generated, for example, due to the application of an appropriate voltage.

[0003] In general, approaches to improving the supply of semiconductor layers are currently being investigated.

[0004] The object of the present invention is to provide an improved optoelectronic semiconductor component and an improved method for producing an optoelectronic semiconductor component.

[0005] According to the invention, this problem is solved by the subject matter and method of the independent claims. Advantageous developments are defined in the dependent claims. Summary of the invention

[0006] A photoelectric semiconductor component comprises a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type, wherein the first and second semiconductor layers are stacked on each other. The photoelectric semiconductor component also comprises a first contact structure, a contact layer arranged on a side of the first semiconductor layer facing away from the second semiconductor layer and connected to the first semiconductor layer, a separation layer arranged on a side of the contact layer facing away from the first semiconductor layer, and a contact hole arranged in the separation layer. The photoelectric semiconductor component also comprises a section of a conductive layer arranged on a side of the separation layer facing away from the contact layer. Here, the sections of the conductive layer are respectively connected to the conductive material in the contact hole. The first contact structure is connected to the contact layer through the sections of the conductive layer and the conductive material in the contact hole. Here, the length of the section is respectively greater than the maximum width of the section, wherein the length represents the shortest distance between the conductive material between the corresponding contact hole and the adjacent section, and the width is measured in a horizontal direction perpendicular to the length. Here, the conductive material can be, for example, a part of the first contact structure or a part of the conductive layer. At least two sections connecting the contact holes having different distances from the first contact structure to the first contact structure have mutually different widths.

[0007] According to an embodiment, most of the sections of the conductive layer are respectively electrically connected to exactly one contact hole. For example, the width of a section of the plurality of sections of the conductive layer is selected according to the distance of the corresponding contact hole from the first contact structure. Within the scope of the present disclosure, the term "most" means that more than 50%, such as more than 75% or even more than 90% of the sections of the conductive layer are respectively electrically connected to exactly one contact hole.

[0008] The optoelectronic semiconductor component may also have portions of an optical compensation layer between adjacent sections of the conductive layer. For example, the material of the optical compensation layer is selected from SiON, Y2O3, Sc2O3, HfO2, ZrO2, Ta2O5, TiO2 or Nb2O5.

[0009] According to another embodiment, the optoelectronic semiconductor component includes a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type, wherein the first and second semiconductor layers are stacked on each other. The optoelectronic semiconductor component also includes a first contact structure, a contact layer arranged on a side of the first semiconductor layer facing away from the second semiconductor layer and connected to the first semiconductor layer, and a separation layer arranged on a side of the contact layer facing away from the first semiconductor layer. The optoelectronic semiconductor component also includes a conductive layer arranged on a side of the separation layer facing away from the contact layer, wherein a gap is constructed in the conductive layer and the conductive layer is electrically connected to the first contact structure, and the optoelectronic semiconductor component also includes a contact hole arranged in the separation layer. Here, the conductive layer is connected to the contact layer through a conductive material in the contact hole.

[0010] For example, the slits may be arranged between the contact hole and the first contact structure and intersect with the shortest current path between the first contact structure and the contact hole. The slits may extend perpendicularly to the first contact structure. For example, the slits intersect or contact with the first contact structure.

[0011] A method for manufacturing an optoelectronic semiconductor component, comprising forming a semiconductor layer stack, the semiconductor layer stack comprising a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type, the method comprising forming a contact layer after forming the first semiconductor layer, wherein the contact layer is connected to the first semiconductor layer, and the method comprising forming a separation layer after forming the contact layer. The method also comprises forming a contact hole in the separation layer and forming a section of the conductive layer after forming the separation layer. Here, the sections of the conductive layer are respectively connected to the conductive material in the contact hole. In addition, the first contact structure is connected to the contact layer through the section of the conductive layer and the conductive material in the contact hole. Here, the length of the section is respectively greater than the maximum width of the section, wherein the length represents the shortest distance between the conductive material between the corresponding contact hole and the adjacent section, and the width is measured in a horizontal direction perpendicular to the length. Here, the conductive material can be, for example, part of the first contact structure. According to another embodiment, the conductive material can also be part of the conductive layer. At least two sections connecting the contact holes having different distances from the first contact structure to the first contact structure have mutually different widths.

[0012] For example, for most of the contact holes, the wiring resistance of the corresponding section of the conductive layer can be set according to the distance from the contact hole to the first contact structure. According to an embodiment, the horizontal width of the section of the conductive layer is set.

[0013] For example, the formation of the sections of the conductive layer comprises forming the conductive layer and subsequently structuring.The method may also comprise introducing a compensation layer between the sections of the conductive layer.

[0014] The conductive layer can be structured by etching using a mask. The method can also include, after etching, introducing a compensation layer between regions of the mask.

[0015] The method may further include defining or providing a gap in the conductive layer. For example, the gap may be defined between the contact hole and the first contact structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The accompanying drawings are used to understand the embodiments of the present invention. The accompanying drawings represent embodiments and are used to explain these embodiments in conjunction with the description. Further embodiments and many expected advantages are directly derived from the detailed description below. The elements and structures shown in the figures are not necessarily shown in proportion to each other. The same reference numerals refer to the same or corresponding elements and structures.

[0017] Figure 1A A schematic cross-sectional view of an optoelectronic semiconductor component according to one embodiment is shown.

[0018] Figure 1B A schematic layout of an optoelectronic semiconductor component according to one embodiment is shown.

[0019] Figure 1C Show Figure 1B An enlarged view of some components.

[0020] Figure 1D Show Figure 1B Schematic vertical cross-sectional view of a portion of an optoelectronic semiconductor device is shown.

[0021] Figure 2A A schematic layout of an optoelectronic semiconductor component according to a further embodiment is shown.

[0022] Figure 2B Show Figure 2A An enlarged view of a portion of the structure shown.

[0023] Figure 3 A vertical cross-sectional view of a portion of an optoelectronic semiconductor component is shown.

[0024] Figure 4A A schematic cross-sectional view of an optoelectronic semiconductor component according to a further embodiment is shown.

[0025] Figure 4B An enlarged view of a detail of an optoelectronic semiconductor component according to one embodiment is shown.

[0026] Figure 4C An enlarged view of a detail of an optoelectronic semiconductor component according to a further embodiment is shown.

[0027] Figure 4D A schematic layout of parts of an optoelectronic semiconductor component is shown.

[0028] Figure 5A Methods according to implementation modes are summarized.

[0029] Figure 5B A vertical cross-sectional view of a workpiece is shown when performing a method according to an embodiment.

[0030] Figure 6 An optoelectronic semiconductor device according to one embodiment is shown. DETAILED DESCRIPTION

[0031] In the following detailed description, reference is made to the accompanying drawings, which form a part of the present disclosure and in which specific embodiments are shown for illustration purposes. Herein, directional terms such as "top side", "bottom", "front side", "back side", "above", "above", "front", "rear", "front part", "rear part", etc. are based on the orientation of the above-mentioned drawings. Since the components of the embodiments can be positioned in different orientations, the directional terms are only used for explanation and are not limiting in any way.

[0032] The description of the embodiments is not restrictive, as other embodiments are possible and structural or logical changes may be made without departing from the scope defined by the claims. In particular, elements of the embodiments described below may be combined with elements of other described embodiments, unless the context indicates otherwise.

[0033] The terms "wafer" or "semiconductor substrate" may include any semiconductor-based structure having a semiconductor surface. Wafers and structures are understood to include doped and undoped semiconductors, epitaxial semiconductor layers, supported by a substrate if necessary, and further semiconductor structures. For example, a layer of a first semiconductor material may be grown on a growth substrate of a second semiconductor material or an insulating material, such as a sapphire substrate. Other examples of growth substrate materials include glass, silicon dioxide, quartz or ceramics.

[0034] Depending on the intended use, the semiconductor can be based on a direct or indirect semiconductor material. Examples of semiconductor materials that are particularly suitable for generating electromagnetic radiation include, in particular, nitride semiconductor compounds, by which, for example, ultraviolet, blue or longer wavelength light can be generated, such as GaN, InGaN, AlN, AlGaN, AlGaInN, AlGaInBN, phosphide semiconductor compounds, by which, for example, green or longer wavelength light can be generated, such as GaAsP, AlGaInP, GaP, AlGaP, and other semiconductor materials, such as GaAs, AlGaAs, InGaAs, AlInGaAs, SiC, ZnSe, ZnO, Ga2O3, diamond, hexagonal boron nitride, and combinations of the aforementioned materials. The stoichiometric ratios of the composite semiconductor materials can be different.

[0035] Other examples of semiconductor materials may include silicon, silicon germanium and germanium.In the context of this specification, the term "semiconductor" also includes organic semiconductor materials.

[0036] The term "substrate" generally includes insulating, conductive or semiconductor substrates.

[0037] The terms "lateral" and "horizontal" as used in this description intend to describe an orientation or direction extending substantially parallel to a first surface of a substrate or semiconductor body. This may be, for example, the surface of a wafer or a chip (Die).

[0038] For example, the horizontal direction may lie in a plane perpendicular to the growth direction during layer growth.

[0039] The term "vertical" as used in this description intends to describe an orientation extending substantially perpendicularly to the first surface of the substrate or semiconductor body. The vertical direction may correspond, for example, to a growth direction when a layer is grown.

[0040] When the terms "having", "comprising", "including", "having" and the like are used herein, they are open terms, indicating the presence of stated elements or features but not excluding the presence of additional elements or features. Indefinite and definite articles include the plural as well as the singular, unless the context clearly indicates otherwise.

[0041] In the context of the present invention, the term "electrically connected" means a low-resistance electrical connection between connected elements. Electrically connected elements are not necessarily directly connected to each other. Other elements may be arranged between electrically connected elements.

[0042] The term "electrical connection" also includes via contacts between connected elements.

[0043] Figure 1A Shown is a vertical cross-sectional view of an optoelectronic semiconductor component according to one embodiment. Figure 1AThe optoelectronic semiconductor component shown in the figure can be, for example, a light emitting diode (LED). The first semiconductor layer 110 and the second semiconductor layer 120 are arranged on a suitable carrier 100. For example, the first semiconductor layer 110 can be doped with a first conductivity type, such as a p-type, and the second semiconductor layer 120 can be doped with a second conductivity type, such as an n-type. For example, the first and second semiconductor layers 110, 120 are based on nitride compound semiconductor materials. The active region 115 can be arranged between the first semiconductor layer 110 and the second semiconductor layer 120.

[0044] The active region may have, for example, a pn junction, a double heterostructure, a single quantum well structure (SQW) or a multiple quantum well structure (MQW) for generating radiation.

[0045] The term “quantum well structure” does not have any meaning here with regard to the quantization dimension and therefore generally includes, in particular, quantum troughs, quantum wires and quantum dots and any combinations of these layers.

[0046] For example, the second semiconductor layer 120 can be arranged between the first semiconductor layer 110 and a suitable carrier 100. For example, the carrier 100 can be a growth substrate for the semiconductor layer sequence. Suitable materials for the growth substrate can include, for example, sapphire, silicon carbide or gallium nitride. A contact layer 109 made of a conductive material can be arranged on the first semiconductor layer 110. For example, the contact layer 109 can be composed of a conductive oxide, a so-called TCO ("transparent conductive oxide"). Examples include in particular ITO (indium tin oxide), IZO (indium zinc oxide) or other transparent conductive materials. For example, the contact layer 109 can be directly adjacent to the first semiconductor layer 110.

[0047] A separation layer 108 may be arranged on the contact layer 109. For example, the separation layer 108 may include one or more insulating layers. A contact hole 123 may be formed in the separation layer 108. The section 104 of the conductive layer 107 is arranged on the separation layer 108. A conductive material may be arranged in the contact hole 123. For example, the conductive material in the contact hole 123 may be part of the conductive layer 107. However, according to other embodiments, a conductive contact material may also be arranged in the contact hole 123.

[0048] also, Figure 1AThe optoelectronic semiconductor component shown in comprises a first contact structure 105 connected to a contact layer 109 via a section 104 of a conductive layer 107 and a conductive material in a contact hole 123. The conductive layer 107 is formed of a transparent conductive material, for example a conductive metal oxide, such as ITO or IZO. For example, the layer thickness of the conductive layer 107 can be greater than the layer thickness of the contact layer 109. For example, the layer thickness of the contact layer can be 5 to 25 nm. For example, the layer thickness of the conductive layer can be 50 to 150 nm. Figure 1A In the optoelectronic semiconductor component shown in , the functions of current distribution and electrical contact are separated from each other. Specifically, the thin contact layer 109 is arranged to contact the first semiconductor layer 110 over the entire surface or over a large area. Since its layer thickness is smaller, the thin contact layer 109 has a smaller lateral conductivity. On the contrary, since the layer thickness is reduced, less electromagnetic radiation is absorbed. The thicker conductive layer improves the lateral conductivity. Radiation losses can be reduced, for example, by the separation layer 108, which will be explained below. Through the section 104 of the conductive layer 107, the electrical contact between the first contact structure 105 and the contact layer 109 is realized by the conductive material in the contact hole 123 in the separation layer 108.

[0049] The separation layer 108 comprises a dielectric material, such as silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, titanium oxide, tantalum oxide, niobium oxide, and a combination of these materials. According to an embodiment, the separation layer 108 can be composed of a single dielectric material. For example, the separation layer can have a matching refractive index, where "matching" means that the refractive index of the dielectric material is greater than or equal to the refractive index of the medium surrounding the separation layer 108. The surrounding medium is arranged behind the separation layer 108 along the emission direction of the emitted electromagnetic radiation. The surrounding medium includes an element that encapsulates the semiconductor body and has a protective function in particular. For example, the semiconductor body can have a passivation layer and / or a packaging structure as a surrounding medium.

[0050] In an alternative design, the separation layer 108 is constructed as a multilayer and has at least two sublayers with different refractive indices. Preferably, the separation layer 108 includes a layer sequence consisting of a plurality of alternating sublayers with a higher refractive index and a lower refractive index. The sublayer with a higher refractive index has a smaller thickness than the sublayer with a lower refractive index.

[0051] For example, the separation layer 108 has a thickness in the range of 400 nm to 800 nm. When the thickness is in the range of 400 nm to 800 nm, an appropriate compromise can be achieved between the production cost of the separation layer 108 and the filtering characteristics.

[0052] According to the design scheme, the separation layer 108 can be designed in such a way that, for example, only radiation that reaches the separation layer 108 at a steep angle can reach the conductive layer 107. On the contrary, since the difference in refractive index between the semiconductor layer and the surrounding medium caused by total reflection at the transition between the optically thicker medium and the optically thinner medium prevents the relatively flat radiation component from being emitted, the relatively flat radiation component can be blocked by the separation layer 108. The absorption loss in the thicker conductive layer 107 is therefore basically limited to the propagable angle range. For example, the separation layer 108 has a filtering property, which makes the radiation that reaches the separation layer at an angle within the first angle range, that is, at a steep angle, mostly transmitted. In addition, the radiation that reaches the separation layer 108 at an angle within the second angle range, that is, at a relatively flat angle, is mostly reflected.

[0053] For example, the limit between the first angle range and the second angle range is determined by the limit angle of total reflection, which can be derived from the refractive index of the semiconductor layer and the refractive index of the surrounding medium. Here, the first angle range includes angles less than the limit. On the contrary, the second angle range includes angles greater than the limit.

[0054] For example, the separation layer 108 may include a layer stack including a first niobium oxide layer, a silicon oxide layer and a second niobium oxide layer.

[0055] For example, the semiconductor layer stack can be structured into a platform 121. Accordingly, a portion of the first main surface 119 of the second semiconductor layer 120 can be exposed. For example, a portion of the separation layer 108 can be arranged adjacent to the first main surface 119 of the second semiconductor layer 120. In addition, a portion of the separation layer 108 can be arranged on the side wall 122 of the platform 121. The second electrical contact element 126 can, for example, contact the second semiconductor layer 120 in the region of the exposed first main surface 119. For example, the second contact element 126 can be connected to the second semiconductor layer 120 via a conductive material 124. The insulating material 129 can be arranged between the second contact element 126 and the semiconductor material 120 located thereunder. For example, a structure arranged on the left side of the second contact element 126 can be repeated on the right side of the second contact element 126.

[0056] By applying a voltage between the first contact structure 105 and the second contact element 126, current can be introduced into the optoelectronic semiconductor component in order to emit electromagnetic radiation 20, for example, via the first main surface of the first semiconductor layer 102. Generally speaking, the more uniform the current injection, the higher the efficiency of the optoelectronic semiconductor component.

[0057] Figure 1BA schematic layout of an optoelectronic semiconductor component according to an embodiment is shown. Here, the first contact structure 105 is configured as a contact finger, for example. The contact finger can be configured in a rectangular, annular or arcuate shape. However, any other design of the contact finger is feasible. For example, it can be designed in a comb-like or leaf-like texture. In addition, the first contact structure 105 can have a plurality of contact fingers, which can be designed identically or differently from each other. The first contact structure 105 can be electrically connected via a first contact element 106. In addition, the optoelectronic semiconductor component 10 includes a second contact element 126.

[0058] according to Figure 1B , for example, the first contact structure 105 and the second contact structure ( Figure 1B (not shown) can be designed to overlap in the vertical direction. This will refer to Figure 1D Further elaboration. Figure 1B The optoelectronic semiconductor component 10 shown in FIG further comprises a plurality of contact holes 123 in the separating layer 108. The second contact element 126 can be arranged, for example, at a corner position of a rectangle, diagonally opposite to the first contact element 106. For example, contacting the second semiconductor layer can be achieved at a position surrounded by the first semiconductor layer 110 on both sides.

[0059] Figure 1C Shown in Figure 1B An enlarged view of the portion indicated by "C". Figure 1C A first contact structure 105 and a plurality of sections 104 of conductive material are shown. The sections 104 of conductive material can be connected to each other, for example, by material of a conductive layer 107 arranged below the first contact structure 105. The sections 104 of conductive material can also be connected even by a portion of a conductive layer 107 that is not necessarily arranged below the first contact structure 105. The length s of the sections 104 is respectively greater than the maximum width d of the sections 104. Here, the length s represents the shortest section between the corresponding contact hole 123 and the conductive material between adjacent sections 104. The conductive material can be, for example, a portion of the first contact structure 105 or a portion of the conductive layer 107. The width d is measured perpendicular to the length s. For example, the length s can be at least twice or at least three times or even at least four times the width d of the section 104. For example, the length s of the section 104 can be defined as a linear extension area of ​​the conductive material 107, wherein adjacent sections 104 are not directly adjacent to each other but are separated from each other, for example, by gaps or other, for example insulating, materials.

[0060] The term "segment of conductive material" here refers to a structured part of conductive material. Adjacent segments can be electrically and physically connected to one another, for example, via conductive material or even via the first contact structure 105. These segments can, for example, at least partially have a rectangular surface.

[0061] For example, each section 104 of the conductive layer 107 may correspond to exactly one contact hole 123 and be connected thereto. According to another embodiment, most of the sections 104 of the conductive layer 107, for example, greater than 50%, greater than 75%, or even greater than 90%, may correspond to exactly one contact hole 123 and be connected thereto. Figure 1C The electrical contact between the conductive layer 107 (not shown) and the segment 104 can be made only through the contact hole 123. For example, the width d of each segment 104 of the conductive layer 107 can be selected according to the length s of the segment 104. For example, the contact holes 123 with the smallest distance can correspond to the segments 104 with the smaller length s1 and the smallest width d1. In a corresponding manner, the contact holes 123 with the largest distances from the first contact structure 105 can correspond to the segments 104 with the largest length s3 and the smallest width d3. The larger the distance from the first contact structure 105, the wider the corresponding or belonging segment 104 is configured. The smaller the distance from the first contact structure 105, the narrower the corresponding or belonging segment 104 is configured. For example, if the segments 104 have different lengths from each other, the segments 104 have different widths. The lead resistances of the corresponding segments 104 through the conductive layer 107 can be set to substantially the same value. As a result, a particularly uniform current distribution can be achieved.

[0062] According to other embodiments, the respective widths of the segments 104 can be dimensioned according to other criteria. For example, current injection can be preferentially performed into areas with a higher output probability. The individual segments 104 are locally separated from one another, thereby enabling better ESD (“electrostatic discharge”) stability of the optoelectronic semiconductor component, thereby reducing the risk of failure. In addition, by means of a special design of the segments 104, i.e., segments 104 having a shorter distance to the corresponding contact holes 123 have an excessively reduced width, the lead resistance relative to the contact holes 123 located near the first contact structure 105 is increased compared to the lead resistance with a respectively proportionally adjusted width d. The current density in the environment of the first contact structure 105 is thereby reduced. As Figure 1C As shown in FIG. 1 , the section 104 of the conductive layer 107 extends approximately perpendicularly to the first contact structure 105 or approximately parallel to the current line.

[0063] Figure 1D Show Figure 1BSchematic cross-sectional view of an optoelectronic semiconductor component between I and I' shown in . The second semiconductor layer 120 and the first semiconductor layer 110 and, if necessary, the active region 115 are arranged on the carrier 100. A portion of the first semiconductor layer 110 and the active region 115 are locally removed so that a portion of the first surface 119 of the second semiconductor layer 120 is exposed. The second contact structure 125 is arranged in this region. Portions of the first and second semiconductor layers 110 and 120 are respectively arranged on both sides of the second contact structure 125. The second contact structure 125 is surrounded by a separation layer 108 on three sides, for example, so that the second contact structure 125 is electrically insulated by adjacent sections 104 of the conductive material 107. For example, the second contact structure 125 includes a layer stack, the layer stack includes one or more metal layers, or the second contact structure 125 includes a layer stack, the layer stack includes a conductive oxide layer (TCO, "transparent conductive oxide"). For example, the layer stack may include an Ag layer that is critical to the electrical function of the contact structure 125. The first contact structure 105 can be arranged in a vertical direction on the second contact structure 125. In this way, the absorption of the generated electromagnetic radiation can be reduced. In addition, the second semiconductor layer 120 can be contacted in a space-saving manner via the second contact structure 125. The first semiconductor layer 110 is electrically connected to the section 104 of the conductive layer 107 and the first contact structure 105 via the contact layer 109 and the conductive material in the contact hole 123.

[0064] Figure 2A Schematic layout of an optoelectronic semiconductor component 10 according to a further embodiment is shown. Figure 1B The embodiment shown in is different in that the first contact structure 105 is designed to be arc-shaped. For example, a part of the first contact structure 105 is configured as a first contact element 106. The second contact element 126 is isolated from the first contact structure 105 and connected to the second contact structure 125 not shown. The second contact structure is arranged in a plane below the drawing plane shown. A plurality of contact holes 123 are arranged, for example, along concentric circles inside and outside the circle or area defined by the first contact structure 105. Of course, alternative arrangement patterns of the contact holes 123 can also be realized.

[0065] Figure 2B Show Figure 2A Magnified view of area B shown. Figure 2BAs shown in , each individual contact hole 123 is connected to the first contact structure 105 via a segment 104 of the conductive layer 107. The segments 104 of the conductive layer 107 can be connected to each other via the contact structure 105. The width of the segment 104 is selected according to the distance between the corresponding contact hole 123 and the contact structure 105. In this case, the distance between the contact hole 123 and the first contact structure 105 or the conductive material between adjacent segments is measured perpendicularly to the extension of the first contact structure 105 or in the current direction. The width of the segment 104 is measured perpendicularly to the extension direction of the segment 104. Figure 2B In the embodiment shown in , the greater the distance of the corresponding contact hole 123 from the first contact structure 105, the greater the width of the segment 104. The resistance between the first contact structure 105 and the first semiconductor layer 110 can thus remain approximately constant. The segments 104 with different lengths also have different widths from each other.

[0066] According to an embodiment, for example, the section 104 of the conductive layer 107 can be produced by structuring the conductive layer 107. In this case, parts of the conductive layer are removed. Local removal of parts of the conductive layer 107 can have a negative impact on the optical properties, in particular the transmission, of the optoelectronic semiconductor component. In order to compensate for this effect, an optical compensation layer 118 can be additionally provided.

[0067] Figure 3 A cross-sectional view of a portion of an optoelectronic semiconductor component is shown, which has a compensation layer 118 arranged between adjacent sections 104 of a conductive layer 107. For example, the compensation layer can be as non-absorbing as possible. For example, a material with a refractive index similar to that of the etched conductive layer 107 can be selected, such as SiON, Y2O3, Sc2O3, HfO2, ZrO2, Ta2O5, Nb2O5, or TiO2. By adjusting the layer thickness, deviations in the refractive index can be partially compensated. According to an embodiment, the compensation layer can also include a layer stack of multiple individual layers of these materials. By depositing a Nb2O5 layer with a suitable layer thickness, it can be achieved that the optical properties of the optoelectronic semiconductor component, such as transmission, are changed as little as possible when removing areas of the conductive layer 107. In this way, the output efficiency of the optoelectronic semiconductor component can be further improved.

[0068] Figure 4A 1 shows a vertical cross-sectional view of an optoelectronic semiconductor component according to another embodiment. The optoelectronic semiconductor component has a first semiconductor layer 110 of a first conductivity type and a second semiconductor layer 120 of a second conductivity type, as shown in FIG. Figure 1A In addition, the optoelectronic semiconductor component includes a contact layer 109, a separation layer 108 and a conductive layer 117. The contact layer 109, the separation layer and the conductive layer 117 are, for example, as described in reference Figure 1AThe slots 112 are formed in the conductive layer 117 . The optoelectronic semiconductor component 10 furthermore has a contact hole 123 , and the conductive layer 117 is connected to the contact layer 109 via the conductive material in the contact hole 123 .

[0069] Other components and references for optoelectronic semiconductor components Figures 1A to 1D Unlike this, the conductive layer 117 is formed as a layer, wherein gaps are formed in the conductive layer.

[0070] Figure 4B An enlarged detail of a portion of an optoelectronic semiconductor component according to one embodiment is shown. Figure 4B The section shown in Figure 4D Marked as "A".

[0071] According to an embodiment, the gap 112 may be arranged between the contact hole 123 and the first contact structure 105. Figure 4B As shown. For example, the slits may surround the contact holes 123 on the side facing the first contact structure 105, so that the current path 113 cannot realize a direct path between the first contact structure 105 and the contact hole 123, but extends around the slits 112. The slits 112 intersect with multiple potential current paths between the contact hole 123 and the first contact structure. In the scope of this description, the term "slit" refers to an area where the conductive layer 117 is partially removed. For example, in a horizontal plane, the slits may be completely surrounded by the conductive layer 117, such as Figure 4B As shown. The gap may extend in an arc shape or in a straight line. According to an embodiment, the gap may also extend to the first contact structure 105, for example. Figure 4C As shown. For example, the length of the gap can be equivalent to several times, for example at least ten times or at least one hundred times, the width of the gap. Here, the length and width of the gap are respectively measured in the horizontal direction. The length of the gap is, for example, the larger horizontal dimension, and the width of the gap is, for example, the smaller horizontal dimension.

[0072] For example, the current path between the first contact structure 105 and the contact hole 123 located near the first contact structure 105 is extended in this way. Accordingly, for the contact hole 123 arranged at a smaller distance relative to the first contact structure 105, the resistance increases. In particular, those gaps 112 that are adjacent to or close to the contact hole of the first contact structure 105 may include an extension 112a, which extends from the contact hole 123 in a vertical direction away from the contact structure 105. For example, the extension 112a may extend radially outward, such as Figure 4BAs shown. The extension direction of the extension 112a can correspond to the current direction. For example, those contact holes 123 arranged at a medium distance from the first contact structure 105 only have the gap 112 without the extension 112a, and the contact holes 123 with a greater distance from the first contact structure do not have a gap. The resistance can thus be increased according to the distance from the first contact structure, so that a greater uniformity of the current density applied can be achieved, and thus a higher efficiency can be achieved.

[0073] Figure 4C A portion of an optoelectronic semiconductor component according to another embodiment is shown. Here, the gap 112 is arranged in a direction approximately perpendicular to the first contact structure 105. For example, the gap 112 extends in the current direction. According to an embodiment, the sections of the conductive layer 117 arranged between the contact hole 123 and the first contact structure 105 are separated from each other by the gap 112. For example, the gap 112 can extend in a straight line and intersect or contact the first contact structure 105 respectively. Here, the conductive layer 117 is removed in a region parallel to the extension in the forward current direction. Accordingly, in the case of a reverse voltage, the concentration of the current will be reduced to each individual contact hole 123. For example, when a reverse voltage is applied, a breakdown occurs locally due to inhomogeneity, and due to the presence of the gap 112, the flowing current is not only concentrated on each individual contact hole 123. The result is that the ESD strength of the optoelectronic semiconductor component increases.

[0074] Since only a small amount of conductive layer 117 material is removed and no current lines are interrupted, the additional influence on the voltage (Uf) in the forward direction is small. Accordingly, the presence of these gaps 112 can improve the robustness or reliability of the optoelectronic component to discharge and thereby improve ESD stability.

[0075] Figure 5A The method according to the embodiment is summarized. A method for manufacturing an optoelectronic semiconductor component includes forming (S100) a semiconductor layer stack, the semiconductor layer stack including a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type. The method also includes forming (S110) a contact layer after forming the first semiconductor layer, wherein the contact layer is connected to the first semiconductor layer. The method also includes forming (S120) a separation layer after forming the contact layer and forming (S130) a contact hole in the separation layer. The method also includes forming (S140) a segment of a conductive layer after forming the separation layer, wherein the segments of the conductive layer are respectively connected to the conductive material in the contact hole. The first contact structure is electrically connected to the contact layer through the segments of the conductive layer and the conductive material in the contact hole. The length of the segments is respectively greater than the maximum width of the segments, wherein the length represents the shortest distance between the conductive material between the corresponding contact hole and the adjacent segment, and the width is measured perpendicular to the length.

[0076] For example, the section 104 of the conductive layer 107 can be produced by forming the conductive layer and then structuring it. In this case, the structuring can be performed by an etching method, for example a chemical etching method. Depending on the embodiment, for example, the photoresist material is appropriately structured.

[0077] Then, an etching method is carried out using the photomask. For example, when a chemical etching method is used, a part of the conductive layer 107 can be underetched.

[0078] Depending on the embodiment, a compensation layer 118 may be additionally formed. For example, the same photomask used for etching the conductive layer may be used to form the compensation layer 118. The material of the compensation layer deposited on the photomask is then removed by a lift-off method.

[0079] Figure 5B Schematic cross-sectional views are shown for illustrating the steps of the method. A structured photoresist layer 128 is applied to the sections 104 of the conductive layer 107. When the compensation layer 118 is deposited using the mask used for structuring the conductive layer 107, it is ensured that the compensation layer 118 is deposited only in the exposed regions between the sections 104 of the conductive layer 107. After the regions of the compensation layer 118 have been formed, the photoresist mask 128 and the parts of the compensation layer deposited thereon are removed, for example by a lift-off method, so that a final product is obtained. Figure 3 The structure shown in .

[0080] Figure 6 A view of an optoelectronic device 25 according to an embodiment is shown. The optoelectronic device 25 includes an optoelectronic semiconductor component 10 or 15 as described herein. For example, the optoelectronic device 25 can be a light emitting diode. Although specific embodiments have been shown and described herein, those skilled in the art recognize that the specific embodiments shown and described can be replaced by a variety of alternative and / or equivalent designs without departing from the scope of protection of the present invention. This application is intended to cover any adjustments or changes to the specific embodiments discussed herein. Therefore, the present invention is limited only by the claims and their equivalents.

[0081] List of reference numerals:

[0082] 10 Optoelectronic semiconductor components

[0083] 15 Optoelectronic semiconductor components

[0084] 20 Emitted electromagnetic radiation

[0085] 25 Photoelectric devices

[0086] 100 vectors

[0087] 102 first main surface of the first semiconductor layer

[0088] 103 Passivation layer

[0089] 104 Sections

[0090] 105 first contact structure

[0091] 106 first contact element

[0092] 107 Conductive layer

[0093] 108 separation layer

[0094] 109 contact layer

[0095] 110 first semiconductor layer

[0096] 112 Gap

[0097] 112a Extension

[0098] 113 Current Path

[0099] 115 Active Area

[0100] 117 Conductive layer

[0101] 118 Compensation layer

[0102] 119 first main surface of the second semiconductor layer

[0103] 120 Second semiconductor layer

[0104] 121 Platform

[0105] 122 Platform side wall

[0106] 123 Contact hole

[0107] 124 Conductive materials

[0108] 125 Second Semiconductor Structure

[0109] 126 Second contact element

[0110] 127 Side wall insulation

[0111] 128 Structured glossy lacquer layer

[0112] 129 Insulation Materials

[0113] 131 First current distribution layer

[0114] 132 Insulation layer

[0115] 133 Sections

Claims

1. An optoelectronic semiconductor component (10), comprising: A first semiconductor layer (110) of a first conductivity type; A second semiconductor layer (120) of a second conductivity type, wherein the first semiconductor layer (110) and the second semiconductor layer (120) are stacked on each other; a first contact structure (105); a contact layer (109) arranged on a side of the first semiconductor layer (110) facing away from the second semiconductor layer (120) and connected to the first semiconductor layer (110); a separation layer (108) arranged on a side of the contact layer (109) facing away from the first semiconductor layer (110); a conductive layer (117) arranged on a side of the separating layer (108) facing away from the contact layer (109), wherein a gap (112) is formed in the conductive layer (117) and the conductive layer (117) is electrically connected to the first contact structure (105), and a contact hole (123) arranged in the separation layer (108), wherein the conductive layer (117) is connected to the contact layer (109) via a conductive material in the contact hole (123), The gaps (112) are respectively arranged in the shortest distance between the contact holes (123) and the first contact structures (105), and the current paths (113) bypass the gaps (112).

2. The optoelectronic semiconductor component (10) according to claim 1, wherein The gap (112) extends mostly perpendicularly to the first contact structure (105).

3. The optoelectronic semiconductor component (10) according to claim 1 or 2, wherein: The gap (112) intersects or contacts the first contact structure (105).

4. The optoelectronic semiconductor component (10) according to claim 1 or 2, wherein: The gap (112) is completely surrounded by the conductive layer (117) in a horizontal plane.

5. The optoelectronic semiconductor component (10) according to claim 1 or 2, wherein: The length of the slit is greater than 10 times the width of the slit.

6. An optoelectronic semiconductor component (10), comprising: A first semiconductor layer (110) of a first conductivity type; A second semiconductor layer (120) of a second conductivity type, wherein the first semiconductor layer (110) and the second semiconductor layer (120) are stacked on each other; a first contact structure (105); a contact layer (109) arranged on a side of the first semiconductor layer (110) facing away from the second semiconductor layer (120) and connected to the first semiconductor layer (110); a separation layer (108) arranged on a side of the contact layer (109) facing away from the first semiconductor layer (110); a contact hole (123) arranged in the separation layer (108), a section (104) of a conductive layer (107) arranged on a side of the separating layer (108) facing away from the contact layer (109), The sections (104) of the conductive layer (107) are respectively connected to the conductive material in the contact holes (123), and The first contact structure (105) is connected to the contact layer (109) via the section (104) of the conductive layer (107) and the conductive material in the contact hole (123), wherein the length of the segments (104) is respectively greater than the maximum width of the segments (104), the length representing the shortest distance between the conductive material between the corresponding contact hole and the adjacent segment (104), the width being measured in a horizontal direction perpendicular to the length, and At least two sections (104) connecting contact holes (123) each having different distances from the first contact structure (105) to the first contact structure (105) have different widths, wherein adjacent sections (104) are separated from each other by gaps or other materials.

7. The optoelectronic semiconductor component (10) according to claim 6, wherein: Most of the sections (104) of the conductive layer (107) are electrically connected to exactly one contact hole (123).

8. The optoelectronic semiconductor component (10) according to claim 7, wherein: The widths of most sections of the conductive layer (107) are selected according to the distances between the corresponding contact holes (123) and the first contact structure (105).

9. The optoelectronic semiconductor component (10) according to claim 6, wherein: The optoelectronic semiconductor component further comprises portions of an optical compensation layer (118) between adjacent sections (104) of the conductive layer (107).

10. The optoelectronic semiconductor component (10) according to claim 9, wherein: The material of the optical compensation layer (118) is selected from SiON, Y2O3, Sc2O3, HfO2, ZrO2, Ta2O5, TiO2 or Nb2O5.

11. A method for producing an optoelectronic semiconductor component, the method comprising forming (S100) a semiconductor layer stack, wherein the semiconductor layer stack comprises a first semiconductor layer (110) of a first conductivity type and a second semiconductor layer (120) of a second conductivity type; After forming the first semiconductor layer (110), a contact layer (109) is formed (S110), wherein: The contact layer (109) is connected to the first semiconductor layer (110); After forming the contact layer, forming (S120) a separation layer (108); forming (S130) a contact hole (123) in the separation layer; After forming the separation layer (108), a section (104) of a conductive layer (107) is formed (S140), The sections (104) of the conductive layer (107) are respectively connected to the conductive material in the contact holes (123). A first contact structure (105) is connected to the contact layer (109) via a section of the conductive layer (107) and the conductive material in the contact hole (123), and The length of the segments (104) is respectively greater than the maximum width of the segments (104), the length representing the shortest distance between the conductive material between the corresponding contact hole and the adjacent segment (104), the width being measured in a horizontal direction perpendicular to the length, and At least two sections (104) connecting contact holes (123) each having different distances from the first contact structure (105) to the first contact structure (105) have different widths, wherein adjacent sections (104) are separated from each other by gaps or other materials.

12. The method according to claim 11, wherein: For most of the contact holes (123), the wiring resistance of the corresponding section (104) of the conductive layer (107) is set according to the distance from the contact hole (123) to the first contact structure (105).

13. The method according to claim 11 or 12, wherein: A horizontal width of the section (104) of the conductive layer is set.

14. The method according to claim 11 or 12, wherein: Forming the section (104) of the conductive layer includes forming the conductive layer (107) and subsequent structuring.

15. The method according to claim 11 or 12, further comprising introducing a compensation layer (118) between sections of the conductive layer.

16. The method according to claim 14, wherein the conductive layer (107) is structured by etching using a mask, and wherein: The method also includes introducing a compensation layer (118) between regions of the mask after etching.

17. The method according to claim 11 or 12, further comprising defining gaps (112) in the conductive layer (107).

18. The method according to claim 17, wherein: The gap (112) is defined between the contact hole (123) and the first contact structure (105).

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