Image sensor and electronic device

Abstract

The present application discloses an image sensor and an electronic device, the image sensor comprises a substrate and a first metal interconnection layer and a second metal interconnection layer sequentially formed on the substrate, the substrate, the first metal interconnection layer and the second metal interconnection layer constitute a pixel structure; the pixel structure comprises an effective pixel area and a reference pixel area, the first metal interconnection layer comprises a plurality of first light-transmitting areas and a first light-impermeable area located between the first light-transmitting areas, the second metal interconnection layer comprises a plurality of second light-transmitting areas and a second light-impermeable area located between the second light-transmitting areas; the first light-transmitting areas and the second light-impermeable areas in the effective pixel area are arranged correspondingly, and the first light-transmitting areas and the second light-transmitting areas in the reference pixel area are arranged completely staggered. The present application reduces the distance between the reference pixel and the effective pixel by changing the metal routing of the reference pixel area to block the incident light, while reducing the chip height, saving costs, and simplifying the manufacturing process.

Description

Technical Field

[0001] The present application generally relates to the field of image processing technology, and specifically relates to an image sensor and an electronic device. Background Art

[0002] Image sensor is a device that converts optical images into electronic signals. As an important component of the camera, image sensors are widely used in electronic devices such as digital cameras, mobile phones and computers. Depending on the components used, image sensors can be divided into two categories: charge coupled device (CCD) image sensors and complementary metal oxide semiconductor (CMOS) image sensors.

[0003] Dark current is one of the characteristic indicators of image sensors. It refers to the current flowing through a photoresistor when there is no light irradiation under a certain external voltage. The size of the dark current signal varies with the integration time and chip temperature. That is, the longer the integration time, the larger the dark current signal generated by the image sensor, or the higher the chip temperature, the larger the dark current signal. Since the dark current signal will affect the imaging quality, an optical reference pixel is generally set in the image sensor, and the effective pixel output and the optical reference pixel output are subtracted to eliminate the influence of the dark current on the effective signal.

[0004] In the process of implementing the present invention, the inventors found that there are at least the following problems in the prior art: since the optical reference pixel is not used to generate an image but is only used to eliminate dark current, the optical reference pixel needs to be shielded from light to prevent the optical reference pixel from being sensitive to light and affecting the image quality. The prior art generally sets a light shielding layer in the optical reference pixel to block the incident light, which not only increases the chip height of the image sensor, but also has high production costs and complex manufacturing processes; at the same time, this method also requires a longer distance between the optical reference pixel and the effective pixel, thereby increasing the area of ​​the image sensor. Summary of the invention

[0005] In view of the above-mentioned defects or deficiencies in the prior art, it is desirable to provide an image sensor and an electronic device that can reduce the chip height of the image sensor, while reducing the distance between the optical reference pixel and the effective pixel, saving production costs and simplifying the manufacturing process.

[0006] In a first aspect, the present application provides an image sensor, comprising a substrate and a first metal interconnection layer and a second metal interconnection layer sequentially formed on the substrate;

[0007] The substrate, the first metal interconnection layer and the second metal interconnection layer constitute a pixel structure, and the pixel structure includes an effective pixel area and a reference pixel area;

[0008] The first metal interconnect layer includes a plurality of first light-transmitting regions and a first light-impermeable region located between the first light-transmitting regions, and the second metal interconnect layer includes a plurality of second light-transmitting regions and a second light-impermeable region located between the second light-transmitting regions;

[0009] The first light-transmitting area and the second light-transmitting area in the effective pixel area are arranged correspondingly; the first light-transmitting area and the second light-transmitting area in the reference pixel area are arranged completely staggered.

[0010] Optionally, the first light-transmitting area in the reference pixel area is arranged corresponding to the second light-impermeable area, and the second light-transmitting area in the reference pixel area is arranged corresponding to the first light-impermeable area.

[0011] Optionally, the first light-transmitting region is formed by opening the first metal interconnection layer, and the second light-transmitting region is formed by opening the second metal interconnection layer.

[0012] Optionally, the first light-transmitting area in the reference pixel area is smaller than the first light-transmitting area in the effective pixel area, and the second light-transmitting area in the reference pixel area is smaller than the second light-transmitting area in the effective pixel area.

[0013] Optionally, the pixel structure further includes an invalid pixel region located between the valid pixel region and the reference pixel region;

[0014] The first light-transmitting area and the second light-transmitting area are correspondingly arranged in the invalid pixel area.

[0015] Optionally, the thickness of the pixel structure in the effective pixel area is smaller than the thickness in the reference pixel area.

[0016] Optionally, the pixel structure has a slope in a portion of the reference pixel area.

[0017] Optionally, the pixel structure further includes a color filter located on the second metal interconnect layer, and a plurality of lenses located on the color filter;

[0018] In the effective pixel area, the lens is disposed corresponding to the first light-transmitting area and the second light-transmitting area.

[0019] Optionally, the pixel structure further includes a photodiode array, and the photodiode array is located on a side of the substrate facing away from the first metal interconnection layer;

[0020] The photodiode array includes a plurality of photodiodes, and the photodiodes are arranged in the effective pixel area corresponding to the first light-transmitting area and the second light-transmitting area to receive light incident from the first light-transmitting area and the second light-transmitting area.

[0021] In a second aspect, the present application provides an electronic device, comprising at least one image sensor as described in the first aspect.

[0022] It can be seen from the above technical solutions that the embodiments of the present application have the following advantages:

[0023] The embodiment of the present application provides an image sensor and an electronic device, the image sensor comprising a substrate and a first metal interconnection layer and a second metal interconnection layer sequentially formed on the substrate, the substrate, the first metal interconnection layer and the second metal interconnection layer constitute a pixel structure. The pixel structure comprises an effective pixel region and a reference pixel region, the first metal interconnection layer comprises a plurality of first light-transmitting regions and a first light-impermeable region located between the first light-transmitting regions, the second metal interconnection layer comprises a plurality of second light-transmitting regions and a second light-impermeable region located between the second light-transmitting regions, the first light-transmitting region and the second light-impermeable region located between the second light-transmitting regions, the first light-transmitting region and the second light-transmitting region in the effective pixel region are arranged correspondingly, and the first light-transmitting region and the second light-transmitting region in the reference pixel region are arranged completely staggered. The embodiment of the present application blocks the light incident on the reference pixel by changing the metal routing of the reference pixel region, based on this method, the position of the reference pixel can be made closer to the position of the effective pixel, reducing the distance between the two, and also avoiding the use of light-blocking metal as the light-shielding layer of the reference pixel, reducing the chip height of the image sensor, saving production costs, and simplifying the manufacturing process. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Other features, objects and advantages of the present application will become more apparent by reading the detailed description of non-limiting embodiments made with reference to the following drawings:

[0025] Figure 1 A schematic diagram of the structure of an image sensor provided in an embodiment of the present application;

[0026] Figure 2 A schematic diagram of the structure of another image sensor provided in an embodiment of the present application;

[0027] Figure 3 An example diagram of an image sensor provided in an embodiment of the present application;

[0028] Figure 4In the embodiment of this application Figure 3 The schematic diagram of the AA' cross-sectional structure of the image sensor shown;

[0029] Figure 5 In the embodiment of this application Figure 4 An example of the AA' cross-sectional structure is shown;

[0030] Figure 6 A schematic diagram of the structure of an effective pixel in an effective pixel area provided in an embodiment of the present application;

[0031] Figure 7 A schematic diagram of the structure of a reference pixel in a reference pixel area provided in an embodiment of the present application;

[0032] Figure 8 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0033] In order to enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0034] The terms "first", "second", "third", "fourth", etc. (if any) in the specification and claims of this application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the numbers used in this way can be interchanged where appropriate, so that the embodiments of the application described can be implemented in an order other than those illustrated or described herein.

[0035] In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or apparatus that includes a series of steps or modules is not necessarily limited to those steps or modules explicitly listed, but may include other steps or modules not explicitly listed or inherent to these processes, methods, products, or apparatuses.

[0036] For ease of understanding and explanation, the following Figures 1 to 8 The image sensor and electronic device provided by the embodiments of the present application are described in detail.

[0037] Please refer to Figure 1, which is a schematic diagram of the structure of an image sensor provided in an embodiment of the present application. The image sensor 1 includes a substrate 11 and a first metal interconnection layer 12 and a second metal interconnection layer 13 sequentially formed on the substrate 11. The image sensor 1 in the embodiment of the present application may include but is not limited to a CCD image sensor and a CMOS image sensor.

[0038] It should be noted that the substrate 11, the first metal interconnection layer 12 and the second metal interconnection layer 13 constitute a pixel structure, and the pixel structure includes an effective pixel area 14 and a reference pixel area 15, and the effective pixel area 14 and the reference pixel area 15 are arranged adjacent to each other. Of course, the reference pixel area 15 can also be set around the effective pixel area 14, which is not limited in the embodiment of the present application.

[0039] The first metal interconnection layer 12 includes a plurality of first light-transmitting regions 121 and a first light-impermeable region 122 located between the first light-transmitting regions 121, and the second metal interconnection layer 13 includes a plurality of second light-transmitting regions 131 and a second light-impermeable region 132 located between the second light-transmitting regions 131. The first light-transmitting regions 121 and the second light-impermeable regions 131 in the effective pixel region 14 are arranged correspondingly, and the first light-transmitting regions 121 and the second light-transmitting regions 131 in the reference pixel region 15 are arranged completely dislocated. In other words, the first light-transmitting region 121 in the reference pixel region 15 is arranged correspondingly to the second light-impermeable region 132, and the second light-transmitting region 131 in the reference pixel region 15 is arranged correspondingly to the first light-impermeable region 122. Therefore, the embodiment of the present application changes the metal routing within the reference pixel area 15 so that the light incident on the reference pixel is blocked, thereby making the position of the reference pixel closer to the position of the effective pixel, reducing the distance between the two, and also avoiding the need to set a shading layer for the reference pixel, thereby reducing the chip height of the image sensor, saving production costs, and simplifying the manufacturing process.

[0040] Optionally, in the actual manufacturing process, the first light-transmitting region 121 in the embodiment of the present application is formed by opening the first metal interconnection layer 12, and the second light-transmitting region 131 is formed by opening the second metal interconnection layer 13. The advantage of such a setting is that the embodiment of the present application can improve production efficiency and further simplify the manufacturing process.

[0041] Optionally, in the embodiment of the present application, the first light-transmitting area 121 in the reference pixel area 15 may be smaller than the first light-transmitting area 121 in the effective pixel area 14, and the second light-transmitting area 131 in the reference pixel area 15 may be smaller than the second light-transmitting area 131 in the effective pixel area 14. The advantage of such a setting is that the embodiment of the present application can further bring the position of the reference pixel closer to the position of the effective pixel, shorten the distance between the two, and save the production cost of the chip.

[0042] Optionally, in the embodiment of the present application, the thickness of the pixel structure in the effective pixel region 14 is less than the thickness in the reference pixel region 15. For example, the pixel structure has a slope in the reference pixel region 15.

[0043] It should be noted that the pixel structure in the embodiment of the present application further includes a color filter 16 located on the second metal interconnect layer 13 and a plurality of lenses 17 located on the color filter 16, wherein in the effective pixel area 14, the lens 17 is arranged corresponding to the first light-transmitting area 121 and the second light-transmitting area 131. And the pixel structure further includes a photodiode array 18 ( Figure 1 The photodiode array 18 is located on the side of the substrate 11 facing away from the first metal interconnection layer 12, wherein the photodiode array 18 includes a plurality of photodiodes 181. The photodiodes 181 are arranged in the effective pixel area 14 corresponding to the first light-transmitting area 121 and the second light-transmitting area 131 to receive light incident from the first light-transmitting area 121 and the second light-transmitting area 131.

[0044] Of course, in other embodiments of the present application, such as Figure 2 As shown, the pixel structure of the image sensor 1 may also include an invalid pixel area 19, and the invalid pixel area 19 is located between the effective pixel area 14 and the reference pixel area 15. Among them, the first light-transmitting area 121 and the second light-transmitting area 131 in the invalid pixel area 19 are correspondingly arranged. In the embodiment of the present application, by changing the metal routing of the reference pixel area 15, the light incident on the reference pixel is blocked and cannot reach the photodiode, so that the reference pixel is not sensitive to light. Based on this method, the position of the reference pixel can be made closer to the position of the effective pixel, reducing the area occupied by the invalid pixel. In the actual production process, the embodiment of the present application avoids the use of light-blocking metal as a light-shielding layer for the reference pixel, so the chip height can be reduced by 20 to 30 μm. For example, for an image sensor with a chip height of 1800 μm, the embodiment of the present application can save 1.1% to 1.6% of the chip area, so that the chip cost can be reduced by more than 1%.

[0045] To facilitate a better understanding of the image sensor in the embodiment of the present application, Figure 3 As shown, the effective pixel region 14 , the reference pixel region 15 and the invalid pixel region 19 are arranged adjacent to each other as an example for explanation, and the invalid pixel region 19 is set in the middle of the effective pixel region 14 and the reference pixel region 15 .

[0046] Please refer to Figure 4 , which is in the embodiment of this application Figure 3The schematic diagram of the cross-sectional structure of the image sensor AA' shown in the figure shows that the effective pixel area 14 is located at the bottom of the groove in the groove area, and the reference pixel area 15 and the invalid pixel area 19 are located on the slope formed after the groove is dug, that is, the angle between the first plane where the reference pixel area 15 is located and the second plane where the effective pixel area 14 is located is an acute angle. It should be noted that the first plane may include multiple flat straight surfaces. In other words, when the first plane includes multiple flat straight surfaces, the angles between the two adjacent straight surfaces are different. Since the shorter the optical path of the effective pixel area stacking layer, the higher the quantum efficiency of the image sensor, the better the crosstalk, especially when the pixel size is getting smaller and smaller, the greater the influence of the thickness of the pixel area stacking layer on the crosstalk. Therefore, in the embodiment of the present application, the pixel area is grooved to reduce the thickness of the effective pixel area stacking layer, thereby improving the imaging quality of the image sensor.

[0047] Alternatively, if Figure 5 As shown, it is an embodiment of the present application Figure 4 For example, the image sensor 1 of the embodiment of the present application adopts the front side illumination (FSI) technology, the effective pixel area 14 is located at the bottom of the groove area, the reference pixel area 15 and the invalid pixel area 19 are located on the slope formed after the groove is dug, and the three pixel areas are all arranged on the same substrate.

[0048] Among them, the first metal interconnection layer 12 of the effective pixel area 14 and the first metal interconnection layer 12 of the reference pixel area 15 can be located at the same horizontal position, or they can be located at different horizontal positions. Similarly, the second metal interconnection layer 13 of the effective pixel area 14 and the second metal interconnection layer 13 of the reference pixel area 15 can be located at the same horizontal position, or they can be located at different horizontal positions. The advantage of such a setting is that the embodiment of the present application adopts the same number of metal wiring layers of the reference pixel area 15 and the effective pixel area 14, which can effectively prevent the crosstalk of the incident light.

[0049] Alternatively, if Figure 6 As shown, it is a schematic diagram of the structure of effective pixels in an effective pixel area 14 provided in an embodiment of the present application. Figure 6In addition to the first metal interconnect layer 12 and the second metal interconnect layer 13, the first color filter 161, the first lens 171 and the first photodiode 1811 are also included, wherein the first lens 171 is used to gather incident light, the first color filter 161 is used to filter out incident light corresponding to unnecessary wavelengths, and the first photodiode 1811 is used for light sensing. It should be noted that the light-transmitting area of ​​the first metal interconnect layer 12 and the light-transmitting area of ​​the second metal interconnect layer 13 in the effective pixel are correspondingly arranged so that the incident light can reach the first photodiode 1811. In addition, the lens 17 and the color filter 16 of the effective pixel should have good consistency, and the effective pixels in the effective pixel area 14 should be evenly distributed, so as to better receive the incident light and improve the imaging quality of the image sensor.

[0050] Alternatively, if Figure 7 As shown, it is a schematic diagram of the structure of a reference pixel in a reference pixel area 15 provided in an embodiment of the present application. Figure 7 In addition to the first metal interconnect layer 12 and the second metal interconnect layer 13, the second color filter 162, the second lens 172 and the second photodiode 1812 are also included, wherein the second lens 172 is used to gather incident light, the second color filter 162 is used to filter out incident light corresponding to unnecessary wavelengths, and the second photodiode 1812 is used for light sensing. It should be noted that the light-transmitting area of ​​the first metal interconnect layer 12 and the light-transmitting area of ​​the second metal interconnect layer 13 in the reference pixel are completely misaligned, so that the incident light cannot pass through and thus cannot reach the second photodiode 1812. Therefore, the embodiment of the present application sets the reference pixel area 15 in the transition area, that is, the slope formed by the groove, which reduces the area of ​​the chip and saves production costs.

[0051] The embodiment of the present application provides an image sensor, which includes a substrate and a first metal interconnection layer and a second metal interconnection layer sequentially formed on the substrate, wherein the substrate, the first metal interconnection layer and the second metal interconnection layer constitute a pixel structure. The pixel structure includes an effective pixel area and a reference pixel area, the first metal interconnection layer includes a plurality of first light-transmitting areas and a first light-impermeable area located between the first light-transmitting areas, the second metal interconnection layer includes a plurality of second light-transmitting areas and a second light-impermeable area located between the second light-transmitting areas, and the first light-transmitting areas and the second light-impermeable areas in the effective pixel area are arranged correspondingly, and the first light-transmitting areas and the second light-transmitting areas in the reference pixel area are arranged completely staggered. The embodiment of the present application changes the metal routing of the optical reference pixel area so that the light incident on the reference pixel is blocked and cannot reach the photodiode, so that the reference pixel array is not sensitive to light. Based on this method, the position of the reference pixel area can be made closer to the position of the effective pixel area, the area occupied by the invalid pixel area is reduced, and the imaging quality of the image sensor is improved. At the same time, it also avoids using light-blocking metal as a light-shielding layer of the optical reference pixel, reduces the chip height of the image sensor, saves production costs, and simplifies the manufacturing process.

[0052] Based on the above embodiments, the present application provides an electronic device, which includes the above image sensor 1. Figure 8 As shown, it is a structural block diagram of an electronic device provided in an embodiment of the present application.

[0053] The electronic device 801 includes a processor 8011 and a memory 8012, wherein the processor 8011 may include one or more processing cores, such as a 4-core processor, an 8-core processor, etc. The processor 8011 may be implemented in at least one hardware form of digital signal processing (DSP), field programmable gate array (FPGA), and programmable logic array (PLA).

[0054] The processor 8011 may also include a main processor and a coprocessor. The main processor is a processor for processing data in the awake state, also known as a central processing unit (CPU); the coprocessor is a low-power processor for processing data in the standby state.

[0055] In addition, the processor 8011 may be integrated with a graphics processing unit (GPU), which is used to render and draw the content to be displayed on the display screen. In some embodiments, the processor 8011 may also include an artificial intelligence (AI) processor, which is used to process computing operations related to machine learning.

[0056] The memory 8012 may include one or more computer-readable storage media, which may be non-transitory. The memory 8012 may also include high-speed random access memory and non-volatile memory, such as one or more disk storage devices and flash memory storage devices.

[0057] In some embodiments, the electronic device 801 may further include a peripheral device interface 8013 and at least one peripheral device. The processor 8011, the memory 8012 and the peripheral device interface 8013 may be connected via a bus or a signal line. Each peripheral device may be connected to the peripheral device interface 8013 via a bus, a signal line or a circuit board.

[0058] For example, the peripheral device includes at least one of a radio frequency circuit 8014, a display screen 8015, a camera assembly 8016, an audio circuit 8017, and a power supply 8018. The peripheral device interface 8013 can be used to connect at least one peripheral device related to input / output (I / O) to the processor 8011 and the memory 8012. In some embodiments, the processor 8011, the memory 8012, and the peripheral device interface 8013 are integrated on the same chip or circuit board; in some other embodiments, any one or two of the processor 8011, the memory 8012, and the peripheral device interface 8013 can be implemented on a separate chip or circuit board, which is not limited in the embodiments of the present application.

[0059] The radio frequency circuit 8014 is used to receive and transmit radio frequency (RF) signals, also known as electromagnetic signals. The radio frequency circuit 8014 communicates with communication networks and other communication devices through electromagnetic signals. The radio frequency circuit 8014 converts electrical signals into electromagnetic signals for transmission, or converts received electromagnetic signals into electrical signals. Optionally, the radio frequency circuit 8014 includes an antenna system, an RF transceiver, one or more amplifiers, a tuner, an oscillator, a digital signal processor, a codec chipset, a user identity module card, etc. The radio frequency circuit 8014 can communicate with other devices through at least one wireless communication protocol. The wireless communication protocol includes but is not limited to a metropolitan area network, various generations of mobile communication networks (2G, 3G, 4G and 5G), a wireless local area network and / or a wireless fidelity (Wireless Fidelity, WiFi) network. In some embodiments, the radio frequency circuit 8014 may also include circuits related to near field communication (NFC).

[0060] The display screen 8015 is used to display the user interface (UI). The UI may include graphics, text, icons, videos, and any combination thereof. When the display screen 8015 is a touch display screen, the display screen 8015 also has the ability to collect touch signals on the surface or above the surface of the display screen 8015. The touch signal can be input to the processor 8011 as a control signal for processing. At this time, the display screen 8015 can also be used to provide virtual buttons and / or virtual keyboards, also known as soft buttons and / or soft keyboards. In some embodiments, the display screen 8015 can be one, set on the front panel of the electronic device 801; in other embodiments, the display screen 8015 can be at least two, respectively set on different surfaces of the electronic device 801 or in a folding design; in some other embodiments, the display screen 8015 can be a flexible display screen, set on the curved surface or folding surface of the electronic device 801. Even, the display screen 8015 can also be set to a non-rectangular irregular shape, that is, a special-shaped screen. The display screen 8015 can be prepared using materials such as a liquid crystal display (LCD), an organic light-emitting diode (OLED), etc.

[0061] The camera assembly 8016 includes the above-mentioned image sensor 1 for collecting images or videos. Optionally, the camera assembly 8016 includes a front camera and a rear camera. Typically, the front camera is arranged on the front panel of the device, and the rear camera is arranged on the back of the device. In some embodiments, there are at least two rear cameras, which are any one of a main camera, a depth of field camera, a wide-angle camera, and a telephoto camera, so as to realize the fusion of the main camera and the depth of field camera to realize the background blur function, the fusion of the main camera and the wide-angle camera to realize the panoramic shooting and the virtual reality (VR) shooting function or other fusion shooting functions. In some embodiments, the camera assembly 8016 may also include a flash. The flash can be a monochrome temperature flash or a dual-color temperature flash. A dual-color temperature flash refers to a combination of a warm light flash and a cold light flash, which can be used for light compensation at different color temperatures.

[0062] The audio circuit 8017 may include a microphone and a speaker. The microphone is used to collect sound waves from the user and the environment, and convert the sound waves into electrical signals and input them into the processor 8011 for processing, or input them into the radio frequency circuit 8014 to achieve voice communication. For the purpose of stereo acquisition or noise reduction, there may be multiple microphones, which are respectively arranged at different parts of the electronic device 801. The microphone may also be an array microphone or an omnidirectional acquisition microphone. The speaker is used to convert the electrical signal from the processor 8011 or the radio frequency circuit 8014 into sound waves. The speaker may be a traditional film speaker or a piezoelectric ceramic speaker. When the speaker is a piezoelectric ceramic speaker, it can not only convert the electrical signal into sound waves audible to humans, but also convert the electrical signal into sound waves inaudible to humans for purposes such as ranging. In some embodiments, the audio circuit 8017 may also include a headphone jack.

[0063] The power supply 8018 is used to power various components in the electronic device 801. The power supply 8018 can be an alternating current, a direct current, a disposable battery, or a rechargeable battery. When the power supply 8018 includes a rechargeable battery, the rechargeable battery can support wired charging or wireless charging. The rechargeable battery can also be used to support fast charging technology.

[0064] In some embodiments, the electronic device 801 further includes one or more sensors 8019. The one or more sensors 8019 include but are not limited to an acceleration sensor 8020, a gyroscope sensor 8021, a pressure sensor 8022, a fingerprint sensor 8023, an optical sensor 8024, and a proximity sensor 8025.

[0065] Those skilled in the art will understand that Figure 8The structure shown in the figure does not constitute a limitation on the electronic device 801, and may include more or less components than those shown in the figure, or combine certain components, or adopt a different component arrangement.

[0066] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and modules described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0067] In the several embodiments provided in the present application, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic. For example, the division of the modules is only a logical function division. There may be other division methods in actual implementation, such as multiple modules or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be an indirect coupling or communication connection through some interfaces, devices or modules, which can be electrical, mechanical or other forms. The modules described as separate components may or may not be physically separated, and the components displayed as modules may or may not be physical units, that is, they may be located in one place, or they may be distributed on multiple network units. Some or all of the modules can be selected according to actual needs to achieve the purpose of the scheme of this embodiment.

[0068] In addition, each functional module in each embodiment of the present application may be integrated into a processing unit, or each module may exist physically separately, or two or more units may be integrated into one module. The above-mentioned integrated unit may be implemented in the form of hardware or in the form of a software functional unit. If the integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it may be stored in a computer-readable storage medium.

[0069] Based on this understanding, the technical solution of the present application, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product, and the computer software product is stored in a storage medium. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM), random access memory (RAM), magnetic disk or optical disk, etc., various media that can store program codes.

[0070] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. An image sensor, It is characterized in that comprising a substrate and a first metal interconnection layer and a second metal interconnection layer sequentially formed on the substrate; The substrate, the first metal interconnection layer and the second metal interconnection layer constitute a pixel structure, the pixel structure includes an effective pixel area and a reference pixel area; the pixel structure also includes an invalid pixel area located between the effective pixel area and the reference pixel area; The first metal interconnect layer includes a plurality of first light-transmitting regions and a first light-impermeable region located between the first light-transmitting regions, and the second metal interconnect layer includes a plurality of second light-transmitting regions and a second light-impermeable region located between the second light-transmitting regions; The first light-transmitting area and the second light-transmitting area in the effective pixel area are arranged correspondingly; the first light-transmitting area and the second light-transmitting area in the reference pixel area are arranged completely staggered; The thickness of the pixel structure in the effective pixel area is smaller than the thickness in the reference pixel area; The pixel structure has a slope in portions of the invalid pixel region and the reference pixel region.

2. The image sensor according to claim 1, It is characterized in that The first light-transmitting area in the reference pixel area is arranged corresponding to the second light-impermeable area, and the second light-transmitting area in the reference pixel area is arranged corresponding to the first light-impermeable area.

3. The image sensor according to claim 1, It is characterized in that The first light-transmitting region is formed by opening the first metal interconnection layer, and the second light-transmitting region is formed by opening the second metal interconnection layer.

4. The image sensor according to claim 1, It is characterized in that The first light-transmitting area in the reference pixel area is smaller than the first light-transmitting area in the effective pixel area, and the second light-transmitting area in the reference pixel area is smaller than the second light-transmitting area in the effective pixel area.

5. The image sensor according to claim 1, It is characterized in that The first light-transmitting area and the second light-transmitting area are correspondingly arranged in the invalid pixel area.

6. The image sensor according to claim 1, It is characterized in that The pixel structure further includes a color filter located on the second metal interconnect layer, and a plurality of lenses located on the color filter; In the effective pixel area, the lens is disposed corresponding to the first light-transmitting area and the second light-transmitting area.

7. The image sensor according to claim 1, It is characterized in that The pixel structure further includes a photodiode array, wherein the photodiode array is located on a side of the substrate facing away from the first metal interconnection layer; The photodiode array includes a plurality of photodiodes, and the photodiodes are arranged in the effective pixel area corresponding to the first light-transmitting area and the second light-transmitting area to receive light incident from the first light-transmitting area and the second light-transmitting area.

8. An electronic device, It is characterized in that The electronic device comprises at least one image sensor as claimed in any one of claims 1 to 7.

Images