Touch panel with dummy pattern

Abstract

The present invention relates to the field of touch control technology, and provides a touch panel with a dummy pattern, comprising a first metal nanowire layer and a second metal nanowire layer. The first metal nanowire layer comprises a plurality of first electrode lines, a plurality of first axes connected to the first electrode lines, and a plurality of first dummy patterns. The second metal nanowire layer comprises a plurality of second electrode lines and a plurality of second axes connected to the second electrode lines. The first dummy patterns are electrically insulated and arranged in an area outside the first electrode lines and the first axes, and each first dummy pattern comprises a plurality of first etched areas extending along the first direction and the second direction. The first dummy pattern does not have a first etched area extending along the first direction in an area where only the vertical projection of the second axis is located, so that the electrode pattern is not easily perceived.

Description

Technical Field

[0001] The present invention relates to a touch panel, and in particular to a touch panel with a dummy pattern. Background Art

[0002] With the development of touch panel technology in recent years, touch panels have been widely used in various electronic devices. Touch panels are widely used as an input device to replace a mouse or keyboard, allowing users to directly input information on the panel with their fingers or a pen.

[0003] Usually, a touch panel is placed on the outer surface of a display device such as a liquid crystal display device or an organic light-emitting display device to provide a touch function. In other words, the touch panel is closer to the user than the display device. Therefore, the optical effect of the touch panel will affect the display visual effect of the entire electronic device. In terms of design, the electrode material, electrode pattern, and laminated structure of the touch panel will all affect the optical effect of the touch panel.

[0004] Therefore, how to design the electrode pattern to be imperceptible and improve the optical effect of the touch panel is a problem that needs to be improved. Summary of the invention

[0005] In order to solve the above-mentioned problem of visibility of metal conductors and overcome the shortcomings of the prior art, an object of the present invention is to provide a touch panel with a dummy pattern. Through the design of the dummy pattern, the visibility of the electrode pattern of the double electrode layer is significantly reduced.

[0006] The technical solution adopted by the present invention is:

[0007] A touch panel with a dummy pattern comprises a first metal nanowire layer and a second metal nanowire layer electrically insulated above or below the first metal nanowire layer. The first metal nanowire layer comprises a plurality of first electrode lines, a plurality of first axes and a plurality of first dummy patterns. The first electrode lines extend along a first direction and are arranged at intervals along a second direction, wherein the first direction is perpendicular to the second direction. The first axes extend along the second direction and are arranged at intervals along the first direction, and each of the first axes is connected to a plurality of the first electrode lines. The first dummy patterns are electrically insulated in areas outside the first electrode lines and the first axes, and each of the first dummy patterns comprises a plurality of first etching areas extending along the first direction and the second direction, respectively. The second metal nanowire layer comprises a plurality of second electrode lines and a plurality of second axes. The second electrode lines extend along the second direction and are arranged at intervals along the first direction. The second axes extend along the first direction and are arranged at intervals along the second direction, and each of the second axes is connected to a plurality of the second electrode lines. The first dummy pattern does not have the first etching region extending along the first direction in a region only perpendicular to the second axis.

[0008] In some embodiments, the first dummy pattern is disposed in a vertical projection region where the second electrode line intersects the second axis, and the first etching region is extended along the first direction.

[0009] In some embodiments, the first dummy pattern includes a plurality of first dummy sub-patterns separated by the first etch region.

[0010] In some embodiments, in the first dummy pattern, an area of ​​the first dummy sub-pattern in a vertical projection region at least partially overlapping the second axis is larger than areas of other first dummy sub-patterns.

[0011] In some embodiments, the first etched region is a line, and the line width of the line is between 15 micrometers and 25 micrometers.

[0012] In some embodiments, the first etching regions extending along the first direction are arranged at intervals along the second direction, and the first etching regions extending along the second direction are arranged at intervals along the first direction, wherein the spacing distance between two adjacent first etching regions in the first direction or the second direction is greater than the line width of the second axis.

[0013] In some embodiments, the second metal nanowire layer includes a plurality of second dummy patterns electrically insulated and disposed in a region outside the second electrode line and the second axis, and each of the second dummy patterns includes a plurality of second etching regions extending along the first direction and the second direction, respectively.

[0014] In some embodiments, the second dummy pattern does not include the first etching region extending along the second direction in a region only perpendicular to the first axis.

[0015] In some embodiments, the second dummy pattern is provided in a vertical projection area where the first electrode line intersects the first axis, and the second etching area is extended along the second direction.

[0016] In some embodiments, the second dummy pattern includes a plurality of second dummy sub-patterns separated by the second etch region.

[0017] In some embodiments, in the second dummy pattern, an area of ​​the second dummy sub-pattern at least partially overlapping a vertical projection region of the first axis is larger than areas of other second dummy sub-patterns.

[0018] In some embodiments, the second etched region is a line, and the line width of the line is between 15 micrometers and 25 micrometers.

[0019] In some embodiments, the second etching regions extending along the first direction are arranged at intervals along the second direction, and the second etching regions extending along the second direction are arranged at intervals along the first direction, wherein the spacing distance between two adjacent second etching regions in the first direction or the second direction is greater than the line width of the first axis.

[0020] In some embodiments, the first electrode line and the second electrode line are long strip-shaped electrode lines.

[0021] In some embodiments, the strip shape includes a straight line shape, a sinusoidal wave shape, or a zigzag line shape.

[0022] In some embodiments, the width of the first electrode line and the second electrode line is between 300 micrometers and 500 micrometers.

[0023] In some embodiments, the width of the first axis and the second axis is between 150 microns and 250 microns.

[0024] In some embodiments, the first axis is connected to three of the first electrode lines to form a first electrode of the first nanometal layer; the second axis is connected to three of the second electrode lines to form a second electrode of the second nanometal layer.

[0025] The present invention is described in detail below with reference to the accompanying drawings and specific embodiments, but is not intended to limit the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 is a plan view showing a touch panel according to an embodiment of the present invention;

[0027] Figure 2 is a schematic diagram illustrating a first metal nanowire layer according to an embodiment of the present invention;

[0028] Figure 3 is a schematic diagram illustrating a second metal nanowire layer according to an embodiment of the present invention;

[0029] Figure 4 It is shown Figure 1 An enlarged schematic diagram of the dashed box A;

[0030] Figure 5 It is shown Figure 1 Enlarged schematic diagram of the dashed box B. DETAILED DESCRIPTION

[0031] The present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0032] In order to make the description of the present invention more detailed and complete, the following is an illustrative description of the implementation and specific embodiments of the present invention, but this is not the only form of implementing or using the specific embodiments of the present invention. The various embodiments of the invention described below can be combined or replaced with each other in a beneficial situation, and other embodiments can be added to one embodiment without further recording or explanation. In the following description, many specific details will be described in detail so that the reader can fully understand the following embodiments. However, the embodiments of the present invention can also be practiced without these specific details.

[0033] In addition, spatially relative terms, such as "below," "above," etc., are used to conveniently describe the relative relationship of a component or feature to other components or features in the drawings. These spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation shown in the drawings. The device may be otherwise oriented (e.g., rotated 90 degrees or at other orientations), and the spatially relative descriptions used herein should be interpreted accordingly.

[0034] In this document, unless the context specifically limits the use of an article, "a", "an" and "the" may refer to one or more. It will be further understood that "comprising", "including", "having" and similar words used in this document specify the features, regions, integers, steps, operations, components and / or elements recorded therein, but do not exclude other features, regions, integers, steps, operations, components, components, and / or groups thereof.

[0035] In this article, the term "merge" means merging in various situations, such as partial merging, full merging, discontinuous merging, etc. For example, the original etching line between two adjacent patterns is not etched, presenting the appearance of two patterns merged; the original etching line can also be partially etched, presenting the appearance of partial merging; the original etching line can also be partially discontinuously etched, presenting the appearance of discontinuous merging, etc.

[0036] Several embodiments and experimental examples are listed below to further illustrate the touch panel of the present invention. However, they are only for illustration and are not intended to limit the present invention. The protection scope of the present invention shall be determined by the scope of the appended claims.

[0037] Figure 1 A plan view of a touch panel according to an embodiment of the present invention is shown. The touch panel 100 of the present embodiment is a double-layer electrode layer structure, including a first metal nanowire layer 110 and a second metal nanowire layer 120. In addition, the touch panel 100 also includes a substrate. In order to make the pattern of the electrode layer more clearly presented in this embodiment, part of the substrate is omitted and not shown. In some embodiments, the first metal nanowire layer 110 and the second metal nanowire layer 120 are respectively disposed on opposite sides of the substrate; while in other embodiments, the first metal nanowire layer 110 and the second metal nanowire layer 120 may be disposed on the same side of the substrate, and the first metal nanowire layer 110 and the second metal nanowire layer 120 are electrically insulated by an insulating layer. The first metal nanowire layer 110 and the second metal nanowire layer 120 are electrically insulated by a substrate or an insulating layer, wherein the upper and lower layer position relationship of the first metal nanowire layer 110 and the second metal nanowire layer 120 is not limited by the present invention and can be adjusted according to actual design requirements.

[0038] In some embodiments, the substrate is ideally a transparent substrate. Specifically, it can be a rigid transparent substrate or a flexible transparent substrate, and its material can be selected from glass, acrylic (polymethylmethacrylate; PMMA), polyvinyl chloride (polyvinyl Chloride; PVC), polypropylene (polypropylene; PP), polyethylene terephthalate (polyethylene terephthalate; PET), polyethylene naphthalate (polyethylenenaphthalate; PEN), polycarbonate (polycarbonate; PC), polystyrene (polystyrene; PS), polyimide (polyimide; PI), cyclo-olefin polymers (cyclo-olefin polymers; COP) and other transparent materials.

[0039] Please also refer to Figure 2 and Figure 3 , Figure 2 FIG. 1 is a schematic diagram of a first metal nanowire layer according to an embodiment of the present invention. Figure 3 A schematic diagram of a second metal nanowire layer according to an embodiment of the present invention is shown. The first metal nanowire layer 110 includes a plurality of first electrode lines 111, a plurality of first axes 112, and a plurality of first dummy patterns 113. The first electrode lines 111 extend along a first direction and are arranged at intervals along a second direction. In this embodiment, the first direction is, for example, the X-axis direction; the second direction is, for example, the Y-axis direction, and the first direction is perpendicular to the second direction. The first axes 112 extend along the second direction and are arranged at intervals along the first direction, so that the first axes 112 are connected to the plurality of first electrode lines 111.

[0040] In this embodiment, two adjacent first electrode lines 111 are spaced a predetermined distance apart from each other, specifically, two adjacent first electrode lines 111 are spaced about 0.8 mm to about 1.7 mm apart from each other. In one embodiment, the line width L11 of these first electrode lines 111 is between 300 microns and 500 microns; in some embodiments, the line width L11 is about 300 microns, about 320 microns, about 340 microns, about 360 microns, about 380 microns, about 400 microns, about 420 microns, about 440 microns, about 460 microns, about 480 microns, about 500 microns, or any value between any two of these values. In one embodiment, the line width L12 of these first axes 112 is between 150 microns and 250 microns. In some embodiments, the line width L12 is about 150 microns, about 170 microns, about 200 microns, about 230 microns, about 250 microns, or any value between any two of these values.

[0041] In addition, the first axis 112 of the present embodiment is connected to three first electrode lines 111 for example to form a first electrode 1101 representing an X-axis electrode in the first metal nanowire layer 110. In other words, the first metal nanowire layer 110 includes a plurality of first electrodes 1101, and each first electrode 1101 is a group of three first electrode lines 111, and the first axis 112 in each first electrode 1101 is electrically connected to the three first electrode lines 111 in parallel.

[0042] The first dummy pattern 113 is electrically insulated and disposed in an area outside the first electrode line 111 and the first axis 112, that is, disposed in an area between each first electrode line 111 and between each first axis 112. The first dummy pattern 113 includes a plurality of first etching regions 1130 extending along the first direction and the second direction, respectively, and a plurality of first dummy sub-patterns 1131 separated by the first etching regions 1130, wherein the first dummy sub-patterns 1131 are electrically insulated from each other due to the arrangement of the first etching regions 1130. In one embodiment, the first etching region 1130 is a linear shape, that is, a state of forming an etching line, which may specifically include a curve and / or a straight line, and the line width D of the etching line is between 15 microns and 25 microns. In some embodiments, the line width D is about 15 microns, about 16 microns, about 18 microns, about 20 microns, about 22 microns, about 24 microns, about 25 microns, or any value between any two of these values.

[0043] The second metal nanowire layer 120 includes a plurality of second electrode lines 121 and a plurality of second axes 122. The second electrode lines 121 extend along the second direction and are arranged at intervals along the first direction. The second axes 122 extend along the first direction and are arranged at intervals along the second direction, so that the second axes 122 are connected to the plurality of second electrode lines 121. Similarly, the second axis 122 of the present embodiment is connected to three second electrode lines 121 as an example to form a second electrode 1201 representing a Y-axis electrode in the second metal nanowire layer 120. In other words, the second metal nanowire layer 120 includes a plurality of second electrodes 1201, and each second electrode 1201 is a group of three second electrode lines 121, and the second axis 122 in each second electrode 1201 is electrically connected to the three second electrode lines 121 in parallel.

[0044] In this embodiment, two adjacent second electrode lines 121 are spaced a predetermined distance apart from each other, specifically, two adjacent second electrode lines 121 are spaced about 0.8 mm to about 1.7 mm apart from each other. In one embodiment, the line width L21 of these second electrode lines 121 is between 300 microns and 500 microns; in some embodiments, the line width L21 is about 300 microns, about 320 microns, about 340 microns, about 360 microns, about 380 microns, about 400 microns, about 420 microns, about 440 microns, about 460 microns, about 480 microns, about 500 microns, or any value between any two of these values. In one embodiment, the line width L22 of these second axes 122 is between 150 microns and 250 microns. In some embodiments, the line width L22 is about 150 microns, about 170 microns, about 200 microns, about 230 microns, about 250 microns, or any value between any two of these values.

[0045] It should be further explained that, since the line width L22 of the second axis 122 is relatively smaller than the line width L21 of the second electrode line 121, when the first etching area 1130 (etching line) corresponds to the vertical projection area of ​​the second axis 122, it is easy to cause the edge of the first etching area 1130 (etching line) to be relatively too close to the edge of the second axis 122, resulting in an optically visible situation. More specifically, from the vertical projection direction of the touch panel, if there is any area formed by the etching line between the two edge lines of the second axis 122 (line width L22) (the area has at least two edge lines), then, within the range of the line width L12 of the second axis 122, four edge lines will be formed with relatively close spacing, resulting in optical visibility.

[0046] Please refer to Figure 4 , picture Figure 1 , Figure 2 The enlarged diagram of the dotted box A. To avoid the figure being too complex and difficult to identify, Figure 4 The first metal nanowire layer 110 is only provided with the first dummy pattern 113 as an example. In fact, it is preferred that both the first metal nanowire layer 110 and the second metal nanowire layer 120 are provided with dummy patterns. In the first dummy pattern 113 of this embodiment, only a vertical projection area of ​​the second axis 122 is not provided with the first etching area 1130 extending along the first direction. It is further explained that in the first dummy pattern 113, the first etching areas 1130 (etching lines) extend along the first direction and the second direction respectively and are arranged at intervals along another direction (the second direction and the first direction), and the spacing distance between two adjacent first etching areas 1130 (etching lines) in the first direction or the second direction is greater than the line width L22 of the second axis 122. In one embodiment, assuming that they are arranged at equal intervals in the first direction and the second direction, if the first etching area 1130 (etching line) between two adjacent first dummy sub-patterns 1131 originally arranged along the second direction overlaps with the second axis 122 in the vertical projection direction, then the two adjacent first dummy sub-patterns 1131 are arranged in a merged form, so that among the multiple first dummy sub-patterns 1131 in the first metal nanowire layer 110, the area of ​​the first dummy sub-pattern 1131 that at least partially overlaps with the second axis 122 in the vertical projection direction is larger than the area of ​​other first dummy sub-patterns 1131 that do not overlap with the second axis 122 in the vertical projection direction.

[0047] Next, with respect to the design of the intersection V of the second electrode line 121 and the second axis 122, since the second axis 122 is arranged at the intersection V with the second electrode line 121 extending along the second direction, the second axis 122 does not constitute an etching edge at the intersection V, that is, the first etching region 1130 (etching line) corresponding to the intersection V does not have the problem of being far from the edge of the second axis 122. Therefore, in some embodiments, the first dummy pattern 113 may be arranged at the vertical projection region of the intersection V of the second electrode line 121 and the second axis 122 with the first etching region 1130 (etching line) extending along the first direction.

[0048] It should be supplemented that the first electrode line 111 and the second electrode line 121 of the present embodiment are, for example, designed as long strip electrode lines, that is, similar to slender electrode lines, wherein the so-called long strip shape may further include a straight line shape, a sine wave shape, or a bent line shape. In addition, the first direction of the present embodiment refers to the broad X-axis direction, and the second direction refers to the broad Y-axis direction, so the long strip electrode line of a sine wave shape or a bent line shape can be determined from the direction of its center line. In order to reduce the visibility of the electrode pattern of the touch panel 100 and also to improve the bending ability of the metal nanowire layer, the first electrode line 111 and the second electrode line 121 are preferably designed as the long strip electrode line of the sine wave shape shown in the present embodiment, that is, the so-called S-type electrode line. In addition, the design of the first axis 112 and the second axis 122 is to strengthen the structural integrity of the first metal nanowire layer 110 and the second metal nanowire layer 120. When at least one of the first electrode lines 111 in the first electrode 1101 or at least one of the second electrode lines 121 in the second electrode 1201 is broken, the impedance value of the first electrode 1101 and / or the second electrode 1201 can be avoided from abnormally increasing, thereby maintaining the touch sensing function.

[0049] Please refer to Figure 3 In order to reduce the visibility problem of the touch electrodes of the touch panel, it is preferred to set dummy patterns on both the first metal nanowire layer 110 and the second metal nanowire layer 120. Therefore, in one embodiment, the second metal nanowire layer 120 further includes a second dummy pattern 123. The design of the second dummy pattern 123 is substantially the same as that of the first dummy pattern 113, and the only difference is that the two are designed for electrodes in different axes.

[0050] The second dummy pattern 123 is electrically insulated and disposed in an area outside the second electrode line 121 and the second axis 122, that is, disposed in an area between each second electrode line 121 and between each second axis 122. The second dummy pattern 123 includes a plurality of second etching regions 1230 extending along the first direction and the second direction, respectively, and a plurality of second dummy sub-patterns 1231 separated by the second etching regions 1230, wherein the second dummy sub-patterns 1231 are electrically insulated from each other due to the arrangement of the second etching regions 1230. In one embodiment, the second etching region 1230 is a linear shape, that is, a state of forming an etching line, which may specifically include a curve and / or a straight line, and the line width D of the etching line is between 15 microns and 25 microns. In some embodiments, the line width D is about 15 microns, about 16 microns, about 18 microns, about 20 microns, about 22 microns, about 24 microns, about 25 microns, or any value between any two of these values.

[0051] In addition, please refer to Figure 5 , picture Figure 1 , Figure 3 The enlarged diagram of the dotted box B. To avoid the figure being too complex and difficult to identify, Figure 5 The second dummy pattern 123 is only provided in the second metal nanowire layer 120 as an example. In fact, it is preferred that both the first metal nanowire layer 110 and the second metal nanowire layer 120 are provided with dummy patterns. In the second dummy pattern 123 of this embodiment, only a vertical projection area of ​​the first axis 112 is not provided with the second etching area 1230 extending along the second direction. In addition, in the second dummy pattern 123, the second etching areas 1230 (etching lines) extend along the first direction and the second direction respectively and are arranged in another direction (the second direction and the first direction) at intervals, and the interval distance between two adjacent second etching areas 1230 (etching lines) in the first direction or the second direction is greater than the line width L12 of the first axis 112. Therefore, among the plurality of second dummy sub-patterns 1231 of the second metal nanowire layer 120, the area of ​​the second dummy sub-pattern 1231 at least partially overlaps the first axis 112 in the vertical projection direction is greater than the area of ​​the other second dummy sub-patterns 1231 that do not overlap the first axis 112 in the vertical projection direction.

[0052] Further, with respect to the design of the intersection W of the first electrode line 111 and the first axis 112, since the first axis 112 is arranged at the intersection W with the first electrode line 111 extending along the first direction, the first axis 112 does not constitute an etching edge at the intersection W, that is, the second etching region 1230 (etching line) corresponding to the intersection W does not have the problem of being far from the edge of the first axis 112. Therefore, in some embodiments, the second dummy pattern 123 may be arranged at the vertical projection region of the intersection W of the first electrode line 111 and the first axis 112 with the second etching region 1230 (etching line) extending along the second direction.

[0053] Next, the specific manufacturing methods of the first metal nanowire layer 110 and the second metal nanowire layer 120 are further described. The manufacturing methods of the two layers are the same, and the first metal nanowire layer 110 is used as a representative for the following description. The first metal nanowire layer 110 is formed by coating a dispersion or slurry containing metal nanowires, drying / curing and forming, and patterning.

[0054] The coating step includes, but is not limited to, screen printing, nozzle coating, roller coating and other processes; in one embodiment, a roll-to-roll process can be used to coat the dispersion or slurry containing metal nanowires on the surface of a continuously supplied substrate. The dispersion containing metal nanowires can be a solvent, such as water, alcohol, ketone, ether, hydrocarbon or aromatic solvent (benzene, toluene, xylene, etc.); the above dispersion can also contain additives, surfactants or adhesives, such as carboxymethyl cellulose (CMC), 2-hydroxyethyl cellulose (HEC), hydroxypropyl methylcellulose (HPMC), sulfonates, sulfates, disulfonates, sulfosuccinates, phosphates or fluorine-containing surfactants, etc. The metal nanowire layer can be, for example, a silver nanowire layer, a gold nanowire layer or a copper nanowire layer. In more detail, the term "metal nanowires" as used herein is a collective term, which refers to a collection of metal wires comprising multiple elemental metals, metal alloys or metal compounds (including metal oxides), wherein the number of metal nanowires contained therein does not affect the scope of protection claimed by the present invention; and at least one cross-sectional dimension (i.e., the diameter of the cross section) of a single metal nanowire is less than 500 nm, preferably less than 100 nm, and more preferably less than 50 nm; and the metal nanostructure referred to as "wire" in the present invention mainly has a high aspect ratio, for example, between 10 and 100,000, and in more detail, the aspect ratio (length: cross-sectional diameter) of the metal nanowire may be greater than 10, preferably greater than 50, and more preferably greater than 100; the metal nanowire may be any metal, including (but not limited to) silver, gold, copper, nickel and gold-plated silver. Other terms, such as silk, fiber, tube, etc., if they also have the above-mentioned dimensions and high aspect ratio, are also within the scope of the present invention.

[0055] In some embodiments, the metal nanowires may be silver nanowires or silver nanofibers, which may have an average diameter of about 20 to 100 nanometers and an average length of about 20 to 100 micrometers, preferably an average diameter of about 20 to 70 nanometers and an average length of about 20 to 70 micrometers (i.e., an aspect ratio of 1000). In some embodiments, the diameter of the metal nanowires may be between 70 nanometers and 80 nanometers, and the length may be about 8 micrometers.

[0056] The curing / drying step is mainly to volatilize the solvent and other substances so that the metal nanowires are randomly distributed on the surface of the substrate; preferably, the metal nanowires are fixed on the surface of the substrate without falling off to form the first metal nanowire layer 110, and the metal nanowires can contact each other to provide a continuous current path, thereby forming a conductive network.

[0057] In addition, in some embodiments, an overcoat (not shown) may be disposed on the first metal nanowire layer 110, and after curing, the overcoat and the first metal nanowire layer 110 form a composite structure layer. In one embodiment, a suitable polymer or a mixture thereof may be formed on the first metal nanowire layer 110 by a coating method, and the polymer may penetrate between the metal nanowires to form a filler, and a curing step may be performed to form an overcoat. In other words, the metal nanowires may be considered to be embedded in the overcoat. In a specific embodiment, the curing step may be: the polymer or the mixture thereof may be formed into an overcoat on the first metal nanowire layer 110 by heating and baking (at a temperature of about 60° C. to about 150° C.). The present invention does not limit the physical structure between the overcoat and the first metal nanowire layer 110, for example, the overcoat and the first metal nanowire layer 110 may be a stack of two layers, or the overcoat and the first metal nanowire layer 110 may be combined to form a composite layer. Preferably, the metal nanowires are embedded in the base coating to form a composite structure and are patterned in a subsequent process.

[0058] The above polymers can preferably impart certain specific chemical, mechanical and optical properties to the metal nanowires, such as providing adhesion between the metal nanowires and the substrate, or better physical mechanical strength, so the base coating can also be called a matrix. On the other hand, the base coating can be made of certain specific polymers to give the metal nanowires additional surface protection against scratches and wear. The use of materials such as polyacrylates, epoxy resins, polyurethanes, polysilanes, polysiloxanes, poly(silicon-acrylic acid) can give the metal nanowires higher surface strength to improve scratch resistance. Furthermore, crosslinking agents, polymerization inhibitors, stabilizers (such as but not limited to antioxidants, UV stabilizers), surfactants or the like or mixtures thereof can be added to the above polymers to improve the UV resistance of the composite structure CS or achieve a longer shelf life.

[0059] In addition, the aforementioned metal nanowires may be further post-treated to improve their conductivity, and this post-treatment may be a process step including heating, plasma, corona discharge, UV ozone or pressure. For example, after the step of curing to form the first metal nanowire layer 110, pressure may be applied thereto using a roller. In one embodiment, a pressure of 50 to 3400 psi may be applied to the metal nanowire layer by one or more rollers, preferably 100 to 1000 psi, 200 to 800 psi or 300 to 500 psi. In some embodiments, post-treatments of heating and pressure may be performed simultaneously; in detail, the formed metal nanowires may be subjected to pressure by one or more rollers as described above, and heated at the same time, for example, the pressure applied by the roller is 10 to 500 psi, preferably 40 to 100 psi; and the roller is heated to between about 70°C and 200°C, preferably between about 100°C and 175°C, which may improve the conductivity of the first metal nanowire layer 110. In some embodiments, the metal nanowires are preferably exposed to a reducing agent for post-treatment. For example, the metal nanowires comprising silver nanowires are preferably exposed to a silver reducing agent for post-treatment. The silver reducing agent includes borohydride, such as sodium borohydride; boron nitrogen compounds, such as dimethylaminoborane (DMAB); or gas reducing agents, such as hydrogen (H 2 The exposure time is about 10 seconds to about 30 minutes, preferably about 1 minute to about 10 minutes. The above-mentioned step of applying pressure can be implemented in an appropriate step according to actual needs.

[0060] Finally, the patterning step may be, for example, performing exposure / development (i.e., a well-known lithography process) and etching on the cured first metal nanowire layer 110 to form patterns of the first electrode 1101 and the first dummy pattern 113. In one embodiment, the first metal nanowire layer 110 preferably has the following characteristics: the light transmittance (transmission) of visible light (e.g., wavelength between about 400nm-700nm) may be greater than about 80%, and the surface resistivity (surface resistance) is between about 10 and 1000 ohms / square; preferably, the light transmittance (transmission) of the nanowire layer (e.g., wavelength between about 400nm-700nm) of visible light (transmission) is greater than about 85%, and the surface resistivity (surface resistance) is between about 50 and 500 ohms / square.

[0061] In some embodiments of the present invention, the touch panel with a virtual pattern can be used as a touch sensing film in a touch display device (not shown). The touch sensing film is located on the liquid crystal display module, and the glass cover is disposed on the touch sensing film. The touch sensing film is bonded to the glass cover and the liquid crystal display module with optical colloid (OCA) respectively. Both sides of the touch sensing film can have a protective layer, such as a protective ink, for protection.

[0062] In multiple embodiments of the present invention, in a touch panel with two electrode layers, by designing a dummy pattern, when the etching area in the dummy pattern of one of the metal nanowire layers at least partially overlaps with the axis of the other metal nanowire layer in the vertical projection direction, the dummy pattern is merged to design a design, which not only reduces the visibility of the overall visual pattern, but also prevents the dummy pattern design from causing dense and visible etching lines.

[0063] Of course, the present invention may have many other embodiments. Without departing from the spirit and essence of the present invention, those skilled in the art may make various corresponding changes and modifications based on the present invention, but these corresponding changes and modifications should all fall within the scope of protection of the claims attached to the present invention.

Claims

1. A touch panel with a dummy pattern, characterized in that: Include: A first metal nanowire layer, comprising: A plurality of first electrode lines extending along a first direction and arranged at intervals along a second direction, wherein the first direction is perpendicular to the second direction; A plurality of first axes extending along the second direction and arranged at intervals along the first direction, each of the first axes being connected to a plurality of the first electrode lines; and A plurality of first dummy patterns are electrically insulated and disposed in a region outside the first electrode line and the first axis, each of the first dummy patterns comprising a plurality of first etching regions extending along the first direction and the second direction respectively; as well as a second metal nanowire layer, electrically insulated and disposed above or below the first metal nanowire layer, the second metal nanowire layer comprising: A plurality of second electrode lines extending along the second direction and arranged in intervals along the first direction; and A plurality of second axes extending along the first direction and arranged at intervals along the second direction, each of the second axes being connected to a plurality of the second electrode lines; The first dummy pattern does not have the first etching region extending along the first direction in a region only perpendicular to the second axis.

2. The touch panel according to claim 1, wherein: The first dummy pattern is provided in a vertical projection area where the second electrode line intersects the second axis, and the first etching area is extended along the first direction.

3. The touch panel according to claim 1, wherein: The first dummy pattern includes a plurality of first dummy sub-patterns separated by the first etching region.

4. The touch panel according to claim 3, wherein: In the first dummy pattern, an area of ​​the first dummy sub-pattern at least partially overlapping a vertical projection region of the second axis is larger than areas of other first dummy sub-patterns.

5. The touch panel according to claim 1, wherein: The first etching area is in a linear shape, and the line width of the linear shape is between 15 micrometers and 25 micrometers.

6. The touch panel according to claim 1, wherein: The first etching regions extending along the first direction are arranged at intervals along the second direction, and the first etching regions extending along the second direction are arranged at intervals along the first direction, wherein the spacing distance between two adjacent first etching regions in the first direction or the second direction is greater than the line width of the second axis.

7. The touch panel according to claim 1, wherein: The second metal nanowire layer includes a plurality of second dummy patterns which are electrically insulated and arranged in a region outside the second electrode line and the second axis. Each of the second dummy patterns includes a plurality of second etching regions extending along the first direction and the second direction respectively.

8. The touch panel according to claim 7, characterized in that: The second dummy pattern does not have the second etching region extending along the second direction in a region only perpendicular to the first axis.

9. The touch panel according to claim 8, wherein: The second dummy pattern is provided in a vertical projection area where the first electrode line intersects the first axis, and the second etching area is extended along the second direction.

10. The touch panel according to claim 8, wherein: The second dummy pattern includes a plurality of second dummy sub-patterns separated by the second etched region.

11. The touch panel according to claim 10, wherein: In the second dummy pattern, an area of ​​the second dummy sub-pattern at least partially overlapping a vertical projection region of the first axis is larger than areas of other second dummy sub-patterns.

12. The touch panel according to claim 7, wherein: The second etching area is in the shape of a line, and the line width of the line is between 15 micrometers and 25 micrometers.

13. The touch panel according to claim 7, wherein: The second etching regions extending along the first direction are arranged at intervals along the second direction, and the second etching regions extending along the second direction are arranged at intervals along the first direction, wherein the spacing distance between two adjacent second etching regions in the first direction or the second direction is greater than the line width of the first axis.

14. The touch panel according to claim 1, wherein: The first electrode line and the second electrode line are long strip electrode lines.

15. The touch panel according to claim 14, wherein: The strip shape includes a straight line shape, a sine wave shape or a bent line shape.

16. The touch panel according to claim 1, wherein: The width of the first electrode line and the second electrode line is between 300 micrometers and 500 micrometers.

17. The touch panel according to claim 1, wherein: The widths of the first axis and the second axis are between 150 micrometers and 250 micrometers.

18. The touch panel according to claim 1, wherein: The first axis is connected to the three first electrode lines to form a first electrode of the first metal nanowire layer; the second axis is connected to the three second electrode lines to form a second electrode of the second metal nanowire layer.

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