Substrate transport apparatus and substrate transport method

Abstract

This invention provides a substrate transport apparatus and a substrate transport method. The substrate transport apparatus includes: a non-conductive support portion, the upper surface of which faces a substrate to support the substrate; a moving mechanism for moving the support portion to transport the substrate; a connecting portion connecting the support portion and the moving mechanism and grounding it; a conductive contact portion disposed on the upper surface of the support portion, which abuts against the lower surface of the substrate in a manner that the substrate does not contact the support portion to support the lower surface of the substrate; a strip-shaped conductive path disposed such that the contact portion is connected to the connecting portion; and a bend formed in the strip-shaped conductive path such that the spacing between the strip-shaped conductive paths is more than twice the width of the strip-shaped conductive path. In a substrate transport apparatus that grounds the substrate via a conductive path provided in the support portion of the substrate for de-energization, damage to the substrate can be reliably prevented.

Description

Technical Field

[0001] This invention relates to a substrate transport apparatus and a substrate transport method. Background Technology

[0002] In the manufacturing process of semiconductor devices, various processes are performed, such as coating a semiconductor wafer (hereinafter referred to as "wafer") as a substrate with a coating solution, exposure processing, and heat treatment. In order to perform the above-mentioned processes, for example, wafers are transported between modules included in the device, and this transport is performed using a substrate transport device that supports the substrate for transport.

[0003] However, static electricity accumulates on the wafer during processing. When this static electricity causes an electrostatic discharge (ESD), its energy can potentially damage films, electronic components, or circuits formed on the wafer. In recent years, the ESD tolerance of semiconductor devices has gradually decreased in device design. Patent Document 1 describes a substrate transport device (substrate transport apparatus) that includes a support portion (substrate support member) that releases the charge on the supported wafer to ground via a conductive material.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 8-227798 Summary of the Invention

[0007] The technical problem that the invention aims to solve

[0008] The present invention provides a technique for reliably preventing damage to a substrate in a substrate transport device that grounds the substrate via a conductive path provided in a support portion of the substrate for power removal.

[0009] Technical solutions for solving technical problems

[0010] The substrate transport device of the present invention includes:

[0011] A non-conductive support portion, the upper surface of which faces the substrate to support the substrate;

[0012] A moving mechanism for moving the support portion to transport the aforementioned substrate;

[0013] A connection part that connects the aforementioned support part to the moving mechanism and is grounded;

[0014] A conductive contact portion is provided on the upper surface of the support portion, and abuts against the lower surface of the substrate in such a way that the substrate does not contact the support portion to support the lower surface of the substrate;

[0015] A strip-shaped conductive path is provided in a manner that connects the aforementioned contact portion to the aforementioned connecting portion; and

[0016] The strip-shaped conductive path is formed at the bend in such a way that the spacing between the strip-shaped conductive paths is more than twice the width of the strip-shaped conductive path.

[0017] Invention Effects

[0018] According to the present invention, in a substrate transport device that grounds the substrate via a conductive path provided in the support portion of the substrate for power removal, damage to the substrate can be reliably prevented. Attached Figure Description

[0019] Figure 1 This is a three-dimensional view showing the support portion of the transport arm.

[0020] Figure 2 This is an exploded perspective view showing the branch of the aforementioned support section.

[0021] Figure 3 This is a side view showing the aforementioned support portion.

[0022] Figure 4 These are the top surface view and side view of the branch.

[0023] Figure 5 It is a planar unfolded diagram of the branch.

[0024] Figure 6 This is an explanatory diagram illustrating the spacing between the contact area and the covering area.

[0025] Figure 7 This is an explanatory diagram illustrating the spacing between the contact area and the covering area.

[0026] Figure 8 This is an explanatory diagram showing another example of a support portion.

[0027] Figure 9 This is a diagram showing another example of a banded conductive path.

[0028] Figure 10 This is a diagram showing another example of a banded conductive path.

[0029] Figure 11 This is a diagram showing another example of a banded conductive path.

[0030] Figure 12 This is a diagram showing another example of a banded conductive path.

[0031] Figure 13 This is a top view showing another example of a support.

[0032] Figure 14 This is a perspective view showing another example of a support portion.

[0033] Figure 15 This is a top view showing another example of a support.

[0034] Figure 16 This is a longitudinal cross-sectional view of the coating and developing apparatus.

[0035] Figure 17 This is a top view of the coating and developing apparatus.

[0036] Explanation of reference numerals in the attached figures

[0037] 2. Transport arm

[0038] 5. Strip-shaped conductive pathway

[0039] 6. Threaded components

[0040] 10 moving bodies

[0041] 20 Support section

[0042] 31 Adsorption Pad

[0043] 50. Turning point. Detailed Implementation

[0044] The substrate transport apparatus of the present invention will be described. Figure 1 This is a perspective view of the support portion 20 of the transport arm 2, a substrate transport device used to transport a semiconductor wafer (hereinafter referred to as "wafer") as a substrate in a non-vacuum environment, such as atmospheric conditions. The support portion 20 is a fork-shaped plate that supports the wafer W from below, with its upper surface facing the back side of the wafer W. The support portion 20 includes a base 23 and two branches 21 and 22 extending forward from the left and right sides of the base 23, respectively. The support portion 20 is made of a non-conductive material, such as ceramic, which allows for high rigidity even when relatively thin. Furthermore, non-conductive means, for example, exhibiting a conductivity of 10... 12 Resistance value of Ω or higher. In the following description of the support portion 20, left and right refer to left and right when looking forward; branch portion 22 is located on the left and branch portion 21 is located on the right. The support portion 20 is configured to be symmetrical from left to right.

[0045] Also refer to Figure 2The perspective view of branch 21 will be used for further explanation. Circular plate-shaped adsorption pads 3 are provided on the front ends and base 23 of branches 21 and 22 on the upper surface of the support portion 20. The lower ends of the adsorption pads 3 are embedded in circular recesses 24 provided in the support portion 20. Each adsorption pad 3 is made of a conductive material such as conductive resin, and contacts the back side of the wafer W, supporting the wafer W in a state of floating off the upper surface of the support portion 20.

[0046] Furthermore, regarding the inner wall of the recess 24 formed on the front end side of the branches 21 and 22, a portion on the left and a portion on the right respectively form notches facing outwards from the recess 24. This forms an elongated groove 29 connecting the edges of the branches 21 and 22 to the recess 24. The bottom surface of the recess 24 and the bottom surface of the groove 29 form a first surface, which forms the end of the strip-shaped conductive path described later. Moreover, on the upper surface of the support 20, a second surface higher than the first surface is formed on the outer side of the recess 24 and the groove 29.

[0047] Each adsorption pad 3 is shaped to expand in diameter towards the upper end to stably support the wafer W, and the wafer W can be placed on its upper surface. Furthermore, an adsorption hole 25 is provided at the center of the upper surface of each adsorption pad 3. Figure 3 As shown, the suction hole 25 is connected to the suction passage 26 formed inside the support portion 20, and the suction passage 26 is connected to the suction portion 27. A valve V26 is provided in the suction passage 26. By opening and closing the valve V26, the suction state and the non-suction state of the suction hole 25 are switched. When the back side of the wafer W is placed on each suction pad 3, it is in the suction state and the wafer W is attracted. Regarding the suction pad 3, the suction pads provided in the branches 21 and 22 are sometimes referred to as 31, and the suction pads provided in the base 23 are referred to as 32. The suction pads 31 and 32 are equivalent to contact portions and are connected to the conductive passage provided in the support portion 22.

[0048] As described in the background section, when static electricity accumulates on the wafer W and ESD occurs, there is a possibility of damage to the wafer W. The transport arm 2 is configured to remove static electricity from the wafer W to suppress the occurrence of ESD. Specifically, a coating, which is a conductive component, is formed on the support portion 20, configured as a conductive path connecting the adsorption pad 31 to the ground potential (the threaded component 6 described later). In this way, the support portion 20 has high rigidity and ensures a path for static electricity release.

[0049] However, assuming the impedance of the conductive path is too low, when the wafer W is placed on the adsorption pad 31, a rapid charge movement occurs in the conductive path from the wafer W to the adsorption pad 31 and to the support portion 20. That is, a large current flows through the conductive path formed in the support portion 20 for a short time, and the peak value of this current becomes large. When an excessive current flows through the conductive path in this way, an excessive current also flows into the conductive path on the wafer W side. Therefore, a large current flows through the circuit formed on the wafer W, generating Joule heating, which may cause damage to the junctions of the circuit elements constituting the circuit and melting of the wiring film. In addition, due to the rapid potential change generated in the circuit, a local electric field is generated, which may damage the oxide film. Therefore, in the transport arm 2, a portion of the conductive path is configured as a strip-shaped conductive path 5 so that the conductive path can be ensured to have sufficient length to obtain appropriate impedance.

[0050] The strip-shaped conductive path 5 prevents short circuits between parts of the path. Consequently, the resistance between the upper surface of the adsorption pad 3 and the threaded component 6 is, for example, within a range where proper static electricity removal is expected to be achieved, 1 × 10⁻⁶. 5 Ω or higher, less than 1×10 12 The value of Ω, specifically, for example, is 1 × 10⁻⁶. 7 Ω~9.9×10 9 Ω.

[0051] like Figure 1 As shown, the surfaces of the support portion 20, except for the front ends of each branch portion 21, 22 and the area around the adsorption pad 32, are covered, for example, by a covering portion 4, which is a film constituting the conductive component described above. Specifically, the covering portion 4 is made of, for example, a conductive fluororesin. Therefore, the adsorption pad 32 is surrounded by the covering portion 4, thus insulating the adsorption pad 32 from the covering portion 4. Furthermore, the covering portion 4 is also formed on the branches 21, 22; however, the front edge of the covering portion 4 is located rearward compared to the adsorption pad 31.

[0052] The front edge of the cover 4 is connected to the absorbent pad 3 (31) via a strip-shaped conductive passage 5, which, like the cover 4, forms a conductive coating. Furthermore, the strip-shaped conductive passage 5 is unbranched and forms a single strip-shaped conductive path. In the figure, the cover 4 and the strip-shaped conductive passage 5 are indicated by dots.

[0053] Before providing a detailed explanation of the strip-shaped conductive path 5, please refer to... Figure 3The configuration of the other parts of the transport arm 2 will be described. The transport arm 2 has a moving body 10 as a moving mechanism, which causes the support 20 to slide in the front-back direction, for example, and to move on the base 9. Although not shown in the figure, the transport arm 2 has a rotating mechanism that rotates the base 9 about a vertical axis and a lifting mechanism that raises and lowers the rotating mechanism in the vertical direction, etc., which enables the transport of the wafer W between the modules of the device described later.

[0054] The aforementioned support portion 20 is connected to the movable body 10 by a threaded member 6, which is a conductive connection portion configured to communicate with the cover portion 4. The housing 10A constituting the movable body 10 is, for example, made of a conductive material and connected to a ground potential. Thus, as... Figure 3 As shown schematically, a conductive path is formed that flows through the wafer W, the adsorption pad 31, the strip conductive passage 5, the cover 4, the threaded component 6, and the moving body 10, and is connected to the ground potential.

[0055] Reference Figure 4 , Figure 5 The structure of the strip conductive path 5 of the present invention will be described below. The strip conductive paths 5 are respectively provided at the front ends of the branches 21 and 22. When the extending direction of the branches 21 and 22 is set to forward, each strip conductive path 5 is formed to be mirror-symmetrical with respect to the axis extending in the front-rear direction. Therefore, the structure of the strip conductive path 5 formed in the branch 21 on the right side will be described here.

[0056] Figure 4 This indicates the upper surface and right side of branch 21. Figure 5 This is a diagram showing the unfolded front end of branch 21. Furthermore, in... Figure 5 In this text, the recess 24 formed on the upper surface of the support portion 20 is not described, and the upper surface is represented as a flat surface. Furthermore, the thickness of the cover portion 4 and the strip-shaped conductive passage 5 is ignored. Figure 4 , Figure 5 In the diagram, the upper surface of branch 21 is designated as 21A, the right side as 21B, the lower surface as 21C, and the left side as 21D.

[0057] like Figure 4 , Figure 5As shown, the strip-shaped conductive path 5 is configured to extend across four surfaces of the branch 21: the upper surface 21A (specifically, the bottom surface of the recess 24 and the groove 29), the lower surface 21C, and the left and right sides 21B and 21D. On the lower surface 21C of the branch 21, three conductive paths 51 to 53 extending in the left-right direction are formed side-by-side at equal intervals in the front-back direction. When the three conductive paths are designated as front, middle, and rear sections from the front side, the cover 4 and the rear section conductive path 53 are connected by a conductive path 54 provided on the left side 21D of the branch 21. Furthermore, the rear section conductive path 53 and the middle section conductive path 52 are connected by a conductive path 55 provided on the right side 21B of the branch 21. Also, the middle section conductive path 52 and the front section conductive path 51 are connected by a conductive path 56 provided on the left side 21D of the branch 21. The conductive paths 54 to 56 on the right side 21B or the left side 21D are formed to extend back and forth on each side.

[0058] Furthermore, at the right end of the conductive passage 51 at the front end, it is connected to the conductive passage 57 via the right side surface 21B of the branch 21 and the bottom surface of the groove 29. The front end of the conductive passage 57 extends to the bottom surface of the recess 24. Moreover, the conductive passage 57 extending to the bottom surface of the recess 24 and the lower surface of the adsorption pad 31 are connected to each other via a conductive adhesive (not shown). Therefore, on the upper surface 21A of the branch 21, on the outside of the adsorption pad 31A, the strip-shaped conductive passage 5 is only provided on the bottom surface of the groove 29.

[0059] Moreover, such as Figure 5 As shown, the strip conductive path 5 is formed such that a conductive path bends left and right multiple times in the direction from the cover portion 4 towards the front end of the branch portion 21, forming a periodic rectangular wave-like conductive pattern. Therefore, the strip conductive path 5 includes multiple bends 50. Furthermore, a bend 50 refers to the portion that bends when the conductive path is unfolded in plane; portions that bend along the outline of the support portion 20 by forming only straight conductive paths across different surfaces are not included in the bend 50. Additionally, in the strip conductive path 5, from the portion contacting the adsorption pad 31 to the portion connecting to the cover portion 4, the width of each portion is equal, and its size is represented by F in the figure. Conductive paths 51 to 57 are arranged with a spacing of 2F or more between them. Furthermore, in this example, the width F of the strip conductive path 5 is the thickness of the branch portion 21.

[0060] By providing a strip-shaped conductive path 5 with a bend 50 between the adsorption pad 31 and the threaded member 6, the length of the conductive path from the upper surface of the adsorption pad 31 to the threaded member 6 can be made suitable, and the impedance of the conductive path can be made suitable. Furthermore, when the strip-shaped conductive path 5 with the bend 50 is provided in this way, the width of the strip-shaped conductive path 5 and the spacing between its various portions are configured as described above. By providing this configuration, short circuits between one portion of the strip-shaped conductive path 5 and other portions can be prevented. That is, it can prevent the impedance and resistance values ​​of the conductive path from deviating from the desired range due to a short circuit, thus preventing excessive current from flowing through the conductive path and causing discharge. Furthermore, the width of the strip-shaped conductive path 5 and the spacing between its various portions will be explained in further detail later with another example.

[0061] Furthermore, when supplementation is made, to prevent short circuits in the conductive path provided in the support portion 20 as described above, the spacing between the conductive path 53 constituting the strip conductive path 5 and the coating 4 on the lower surface 21C of the branch portion 21 is also 2F or more (more than twice the width F of the strip conductive path 5). Moreover, as... Figure 6 As shown, on the upper surface 21A of the branch 21, the gap A1 formed between the edge of the covering portion 4 and the adsorption pad 31 is also made to be 2F or more to prevent circuitry within such conductive paths. Furthermore, when the coating portion 4 extends to below the upper surface of the adsorption pad 31, the gap between the adsorption pad 31 and the surface of the coating portion 4 is also made to be 2F or more, similar to the aforementioned gap A1. Specifically, this gap A1 is, for example, 4 mm or more. The appropriate value of this gap A1 is preferably varied according to the permissible charge level of the wafer W.

[0062] The function of the transport arm 2 of the present invention will be explained. The support portion 20 of the transport arm 2 rises from below the charged wafer W, such that the wafer W... Figure 3 As shown, the wafer W is horizontally supported in contact with three adsorption pads 3 (31, 32) and adsorbed onto them. The charge on the wafer W moves in the order of adsorption pad 31, conductive coating (strip conductive path 5 and cover 4), and threaded member 6, thereby de-energizing the wafer W.

[0063] By configuring the strip-shaped conductive path 5 constituting the conductive coating as described above, the impedance between the adsorption pad 31 and the threaded component 6 can be made to a suitable value, and short circuits between parts of the strip-shaped conductive path 5 can be prevented. Therefore, the excessive current mentioned above can be prevented. As a result, excessive current flowing through the wafer W can be suppressed, and damage to the wafer W can be prevented.

[0064] When removing power from the chip W as described above, such as Figure 6As explained, by setting the distance between the cover portion 4 and the adsorption pad 31 to 2F or more as described above, short circuits between the cover portion 4 and the adsorption pad 31 can be prevented. To further explain the positional relationship between the cover portion 4 and the adsorption pad 31, the distance formed by the cover portion 4 and the adsorption pad 31 is more specifically the minimum distance between the aforementioned components to prevent the aforementioned short circuits. Specifically, as described above, the adsorption pad 31 widens upwards, therefore the distance A1 between the upper end of the adsorption pad 31 and the edge of the cover portion 4 is the minimum distance between the aforementioned components, and therefore this distance A1 is set to 2F or more. However, if... Figure 7 As shown, when the adsorption pad 310 is a cylinder with a vertical wall, the lower end of the adsorption pad 310 is closest to the edge of the cover portion 4, so the distance A2 between the lower end and the edge of the cover portion 4 is 2F or more.

[0065] However, assuming the supported wafer W warps, and considering the contact between the wafer W and the support portion 20, the larger the area of ​​the strip-shaped conductive path 5 formed on the upper surface of the support portion 20, the higher the risk of the strip-shaped conductive path 5 being damaged by wear or peeling due to contact with the wafer W. The resistance value of the strip-shaped conductive path 5 is defined by its width; therefore, if it is disconnected from the threaded component 6 as wear or peeling progresses, there is a significant possibility of functional failure.

[0066] In the strip conductive path 5, only the end of the conductive path 57 is formed on the upper surface of the support portion 20, thereby preventing damage to the strip conductive path 5 due to such contact with the wafer W. That is, by only placing the end of the strip conductive path 5 on the upper surface of the support portion 20, it is more reliable to prevent the peak current increase flowing between the adsorption pad 31 and the threaded member 6, which is therefore preferred.

[0067] Furthermore, the conductive path 57 forming the end is preferably positioned sufficiently inward compared to the range described below, which is the range within which the wafer W may warp from the upper surface of the pad to the conductive path 57, considering the elasticity and rigidity of the substrate (here, wafer W) supported by the upper surface of the adsorption pad 31. In other words, the conductive path 57 forming the end in the strip conductive path 5 is preferably positioned at a location that does not contact the supported wafer W with respect to the adsorption pad 31.

[0068] Furthermore, the conductive path 57 is provided on the bottom surface of the groove 29 formed on the upper surface 21A of the branches 21 and 22. Therefore, the distance between the upper edge of the adsorption pad 31 and the conductive path 57 is relatively large, thus preventing a short circuit between the upper edge and the strip conductive path 5 when the wafer W is de-energized as described above. Therefore, the peak current rise between the adsorption pad 3 and the threaded member 6 can be prevented more reliably. In addition, when receiving the wafer W, the support portion 20 rises and approaches the back surface of the wafer W, but at this time the wafer W is further separated from the conductive path 57, thus preventing a short circuit from the wafer W to the conductive path 57, which is preferable.

[0069] Furthermore, when increasing the distance between the conductive path 57 and the adsorption pad 31 as described above, it is not limited to forming the conductive path 57 in the groove 29 (recess 24). Alternatively, it can be as follows... Figure 8 As shown, the surface of the front end of the branch 21 (22) is configured as an inclined surface, and the end 57 of the strip-shaped conductive path 5 is formed on the inclined surface.

[0070] However, when the wafer W is warped as described above, considering the contact between the wafer W and the support portion 20, the larger the area of ​​the strip-shaped conductive path 5 formed on the upper surface of the support portion 20, the higher the possibility of the strip-shaped conductive path 5 being damaged due to contact with the wafer W. As described above, forming the strip-shaped conductive path 5 on the side and lower surfaces of the branch portion 21 helps to reduce such risk and ensures an appropriate length of the strip-shaped conductive path 5, and is therefore preferred.

[0071] For example, the strip-shaped conductive path 5 is formed by covering a portion of the branches 21 and 22 to form a film constituting the conductive path. When the strip-shaped conductive path 5 is formed in this way, a straight mask pattern can be formed on each of the lower surface 21C, side surface 21B, and side surface 21D of the branches 21 and 22. That is, if the strip-shaped conductive path 5 is formed only on the lower surface 21C without utilizing the sides of the branches 21 and 22, the mask pattern is a complex pattern with bends. However, by forming the strip-shaped conductive path 5 using the sides of the branches 21 as described above, the mask pattern is simplified. That is, by forming a portion of the strip-shaped conductive path 5 on the side of the branches 21, it is easier to manufacture the support portion 20.

[0072] Furthermore, the fact that a strip-shaped conductive path 5 is formed on the sides 21B and 21D in addition to the lower surface 21C of the branches 21 and 22 allows for the formation of a sufficiently long strip-shaped conductive path 5 even for the transport arm 2 where the distance between the adsorption pad 31 and the threaded member 6 is relatively short. Moreover, this allows for a suitable impedance between the adsorption pad 31 and the threaded member 6. Therefore, forming a strip-shaped conductive path 5 on the sides of the branches 21 and 22 helps to allow for a higher degree of freedom in the layout of the adsorption pad 3 (31).

[0073] Alternatively, the strip-shaped conductive path 5 can be placed in only one of the branches 21 and 22. Furthermore, it can also be... Figure 1 The suction pad 32 on the base 23 side of the support portion 20 shown in the diagram, and having Figure 5 One end of the strip-shaped conductive passage 5 shown in the diagram is connected, and the other end of the strip-shaped conductive passage 5 is connected to the cover portion 4. That is, at least one of the two absorbent pads 31 and one absorbent pad 32 can be connected to the threaded member 6 via the strip-shaped conductive passage 5 and the cover portion 4.

[0074] Below, refer to Figures 9-12 Another example of the strip-shaped conductive path 5 will be described. Figures 9-12 This diagram shows the unfolded planar distribution of the strip conductive pathways 5A to 5D. The strip conductive pathways 5A to 5D can be formed across multiple surfaces of the support portion 20, or they can be formed on only one surface.

[0075] As in Figure 9 As illustrated in example 5A, a strip-shaped conductive path, the width of each section can be different. Using this... Figure 9 This section details the relationship between the width of the conductive strip and the spacing of its various sections. A line L1, orthogonal to the direction of the conductive strip's formation when observing a point P, is drawn from one end of the conductive strip to the other. The length of L1 is the width F of the conductive strip at point P. This extension L1, L2, is then extended to a length of 2F. This extension L2 should not intersect the conductive strip. Furthermore, this… Figure 9 5A of the strip-shaped conductive path and Figure 5 The strip-shaped conductive path 5 bends at a right angle. Regarding this bend 50, the line L representing the aforementioned width cannot be extended (when extended, it becomes a line representing the length direction of the strip-shaped conductive path). Therefore, the portion other than the bend 50 only needs to satisfy a relationship of at least 2F intervals relative to the aforementioned width F.

[0076] Furthermore, when extending line L2 of L1 to a length of 2F, this extension line L2 should not intersect with the strip-shaped conductive path 5. Therefore, as... Figure 10As shown, the strip-shaped conductive path 5B can be formed as a single bend 50. Furthermore, as... Figure 11 As shown, the conductive strip 5C can also be S-shaped. That is, when the conductive strip 5C is unfolded, it does not necessarily have to be a folded-back structure. Furthermore, as... Figure 12 As shown, the bend 50 of the strip-shaped conductive path 5D can also be formed in an arc shape.

[0077] in addition, Figure 13 This represents another example of transport arm 2. In this example, in... Figure 1 The support portion 20 shown is provided with a guide 204 for aligning the wafer W. The guide 204 is configured to protrude from the left and right sides of the base 23 of the support portion 20 to the outer periphery (sidewall) of the wafer W supported by the support portion 20. Details will be explained when describing other support portions later. The guide 204 acts as an aligner, abutting against the periphery of the wafer W for aligning the wafer W. The guide 204 is made of a conductive material, such as conductive resin. The guide 204 is connected to the base 23, and therefore the surface of the guide 204 is electrically connected to the threaded member 6 via the coating 4 of the base 23.

[0078] However, when a discharge is induced from any component, it is more likely to occur at the pointed end of that component. Therefore, compared to the center side of the planar body, a discharge from the charged wafer W is more likely to occur from the periphery of the wafer W located at a corner. Thus, when the support 20 comes into contact with the wafer W to receive it, a discharge from the wafer W to the guide 204 is more likely to occur. However, by providing a strip-shaped conductive path 5 in the conductive path between the adsorption pad 31 and the threaded component 6 as described above, the impedance of this conductive path can be adjusted to a suitable impedance. That is, when the charge moves mainly from the guide 204 to the threaded component 6 when receiving the wafer W, the peak value of the current flowing through the surface of the support 20 increases, and the strip-shaped conductive path 5 cannot fully perform its function.

[0079] Therefore, the resistance value R1 in the conductive path between the guide 204 and the threaded component 6 is configured to be higher than the resistance value R2 in the conductive path between the adsorption pad 31 and the threaded component 6. Consequently, when the support portion 20 receives the charged wafer W, and the guide 204 approaches the periphery of the wafer W and the adsorption pad 31 approaches the back surface of the wafer W, the charge on the wafer W moves towards the conductive path of the adsorption pad 31, which allows for easier flow. Thus, by suppressing the peak current value as described above, discharge can be suppressed.

[0080] In addition, when the measurement positions in each part are different, the resistance values between the guide member 204 and the threaded member 6 and between the adsorption pad 31 and the threaded member 6 change. Therefore, the above resistance values will be described in detail. The resistance value between the guide member 204 and the threaded member 6 is the resistance value of the path with the lowest resistance value between the contact position of the wafer W in the guide member 204 and the threaded member 6. Therefore, in this example, although multiple threaded members 6 are provided, the resistance value between the guide member 204 and the threaded member 6 is the resistance value between the threaded member 6 closest to the contact position of the wafer W in the guide member 204 and this contact position. Specifically, it is the resistance value between P12 and P13 in the figure. In addition, the contact position of the wafer W in the guide member 204 is the contact position of the wafer W in terms of design. That is, it is designed to be the position where the wafer W contacts the surface of the guide member 204 when the wafer W to be transported is not warped.

[0081] Similarly, the resistance value between the adsorption pad 3(31) and the threaded member 6 is also the resistance value of the path with the lowest resistance value between the contact position (i.e., the position on the upper surface) of the contact wafer W in the adsorption pad 3 and the threaded member 6. Specifically, it is the resistance value between P11 and P13 in the figure. Therefore, the resistance value R2 between P11 and P13 < the resistance value R1 between P12 and P13.

[0082] As described above, the guide member 204 is configured as a conductive member so that R2 < R1 with respect to the resistance value. However, for example, the guide member 204 can also be formed as an insulating member, and a pattern made of a conductive material is formed on the surface to electrically connect the wafer W and the threaded member 6. As such a conductive pattern, a strip-shaped conductive path 5 having a bent portion 50 as described in Figure 4 、 Figure 5 etc. can also be provided.

[0083] In addition, when the guide member 204 is made of a non-conductive material and its surface cannot be discharged, the guide member 204 is charged and attracts particles, and the attracted particles sometimes adhere to the wafer W. Therefore, it is preferable to configure the guide member 204 with a conductive material as described above and connect it to the ground potential so that it can be discharged to prevent particle contamination of the wafer W.

[0084] In addition, Figure 14The support portion 200 is provided with conductive contact portions, namely gap pins 300, protruding into the surface of the support portion 200 instead of the adsorption pad 3. In the support portion 200, the outer region of the gap pin 300 is covered by the coating portion 4, and the lower end of the gap pin 300 is electrically connected to the coating portion 4. Therefore, the wafer W supported on the gap pin 300 is de-energized in the same way as the wafer W supported on the adsorption pad 3. Regarding the support portion 200 of the transport arm 2, a plurality of gap pins 300 are distributed at the front end portions 201, 202 and the base portion 203.

[0085] In addition, the support portion 200 has a similar Figure 13 The guide 204, which is identical to the support portion 20 shown, is also de-energized through contact with the guide 204. After the guide 204 is replenished, the support portion 200 supporting the wafer W... Figure 3 The base 9 shown advances. At this time, the wafer W, which is intended to remain there due to inertia, abuts against the guide 204 and is pressed down. This prevents the wafer W from falling off the support 200 and allows for proper alignment on the support 200. Furthermore, regarding... Figure 13 The support portion 20 shown, which is equipped with the adsorption pad 3, can perform the above-mentioned position alignment when the suction from the adsorption pad 3 has stopped.

[0086] Each support portion 20, 200 has its upper surface facing the wafer W from below, but it may not be parallel to the wafer W, or it may be inclined relative to the back surface of the wafer W. Furthermore, in the examples described above, a strip-shaped conductive path 5 is provided on the support portion 20 facing the wafer W as described above; however, the strip-shaped conductive path 5 is not limited to being provided on such a component. Figure 15 In the example of the conveying arm 205 shown, a plurality of support portions 210 with suction pads 31, 32 are provided, and are connected to the inner periphery of the arc-shaped peripheral portion 212 surrounding the side periphery of the wafer W. The surrounding portion 6 is connected to the moving body 10 (in) via a threaded member 6. Figure 15 (Not shown in the diagram) Connection. The support portion 210 and the surrounding portion 212, which are provided with the adsorption pad 31, are covered by a conductive covering portion 4, just like the support portion 20. The adsorption pad 31 is electrically connected to the threaded component 6 via the covering portion 4. Regarding the covering portion 4, the coating on the upper surface of the surrounding portion 10 is as follows... Figure 5 As described herein, the strip-shaped conductive path 5 is configured with multiple bends 50. That is, the strip-shaped conductive path 5 is not limited to a component disposed opposite to the wafer W.

[0087] The coating and developing apparatus equipped with the aforementioned transport arm 2 will now be described. The coating and developing apparatus is as follows: Figure 16 and Figure 17 The configuration shown connects the carrier block B1, processing block B2, and interface block B3 in a straight line. Interface block B3 is also connected to exposure station B4.

[0088] The carrier block B1 has the function of feeding and transporting a wafer W, for example, with a diameter of 300 mm, from a carrier C (e.g., FOUP), which is a transport container for storing multiple substrates, into and out of the device. It includes a stage 101 of the carrier C, a door 102, and a transport arm 2 (103) for transporting the wafer W from the carrier C.

[0089] The processing block B2 is configured as 1st to 6th unit blocks D1 to D6 for liquid processing of wafer W, which are stacked sequentially from below. Each unit block D1 to D6 has a substantially the same configuration except that the processing liquid supplied to wafer W in the liquid processing unit 110 described later is different.

[0090] by Figure 17 To represent the structure of unit block D3, a transport arm 205 (A3) and a liquid processing unit 110 are provided in unit block D3. The transport arm 205 (A3) moves in a linear transport area R3 from the carrier block B1 side to the interface block B3. The liquid processing unit 110 has a cup-shaped portion 111, for example, for supplying resist liquid to the wafer W. The liquid processing unit 110 supplies processing liquid (here, resist liquid) to the rotating wafer W in the cup-shaped portion 111, for example, causing the resist liquid to diffuse on the surface of the wafer W to form a coating film.

[0091] In addition, in the liquid processing units 110 of unit blocks D1 to D3, a processing liquid as a resist film is applied to the wafer W. In unit blocks D4 to D6, a developing solution is supplied to the wafer W for developing treatment in the liquid processing units 110. Furthermore, heat treatment devices are stacked in shelf units U1 to U6. A shelf unit U7 composed of multiple modules stacked on top of each other is provided on the carrier block B1 side of the transport area R3. The transfer of wafer W between transport arm 2 (103) and transport arm 205 (A3) is carried out by means of the transfer module of shelf unit U7 and transport arm 205 (104).

[0092] Interface block B3 is used for the handover of wafer W between processing block B2 and exposure station B4, and has shelf units U8, U9, and U10 composed of multiple processing modules stacked on top of each other. Furthermore, Figure 15 Reference numerals 105 and 106 in the accompanying drawings refer to the transport arm 2 used for transferring wafers W between shelf units U8 and U9, and between shelf units U9 and U10, respectively. Figure 17 Reference numeral 107 in the figure refers to the transport arm 2 used for transferring the wafer W between the shelf unit U10 and the exposure station B4.

[0093] A brief overview of the transport path of the wafer W in the system consisting of the coating and developing apparatus and the exposure station B4 is provided below. The wafer W moves in the following sequence: carrier C → transport arm 2 (103) → transfer module of shelf unit U7 → transport arm 205 (104) → transfer module of shelf unit U7 → unit blocks D1-D3 → interface block B3 → exposure station B4. Here, a resist film is coated on the surface of the wafer W, and then the surface of the resist film is exposed. Afterward, the exposed wafer W is transported to unit blocks D4-D6 via interface block B3. Then, heat treatment is performed in unit blocks D4-D6, followed by transport to the liquid treatment unit 110 for developing. Afterward, the wafer W moves in the following sequence: transfer module TRS of shelf unit U7 → transport arm 2 (103) → carrier C.

[0094] In such a coating and developing apparatus, for example, when a processing liquid is supplied to a rotating wafer W in the liquid processing unit 110, the wafer W may become statically charged due to friction between the processing liquid and the rotating wafer W. Excessive current can be prevented from flowing instantaneously when such a wafer W is handed over to the transport arms 2, 205 (103, 104, 105, 106, 107, A3), and the static electricity in the wafer W can be removed.

[0095] As the above study has shown, the embodiments disclosed herein should be considered illustrative in all respects and not restrictive. The above embodiments can be omitted, substituted, modified, or combined in various ways without departing from the scope and spirit of the appended claims.

Claims

1. A substrate transport device, characterized in that, include: A non-conductive support portion, the upper surface of which faces the substrate to support the substrate; A moving mechanism for moving the support portion to transport the substrate; A connection part that connects the support part to the moving mechanism and is grounded; A conductive contact portion is provided on the upper surface of the support portion, and abuts against the lower surface of the substrate in such a way that the substrate does not contact the support portion to support the lower surface of the substrate; A strip-shaped conductive path provided in such a way as to connect the contact portion to the connecting portion; and The strip-shaped conductive path is formed at the bend in such a way that the spacing between the strip-shaped conductive paths is more than twice the width of the strip-shaped conductive path.

2. The substrate transport device as described in claim 1, characterized in that: It includes a cover portion formed of a conductive material, located in the support portion in a region spaced apart from the contact portion and connected to the connecting portion. The strip-shaped conductive path is configured such that by connecting the contact portion to the cover portion, the contact portion can be connected to the connecting portion. The gap between the cover and the contact portion is greater than or equal to the size of the strip-shaped conductive path between them.

3. The substrate transport device as described in claim 1, characterized in that: The strip-shaped conductive path is formed in the support portion in a manner that spans the upper surface and the surface other than the upper surface. Only one end of the strip-shaped conductive path connected to the contact portion is provided on the upper surface of the support portion.

4. The substrate transport device as described in claim 3, characterized in that: The strip-shaped conductive path is made of a conductive material disposed on the surface of the support portion. The strip-shaped conductive path forms part of the conductive component disposed on the upper surface of the support. The upper surface of the support includes a first surface and a second surface that is closer to the substrate than the first surface. Another part of the conductive component is disposed on the second surface, and one end of the strip-shaped conductive passage is disposed on the first surface.

5. The substrate transport device as described in any one of claims 1 to 4, characterized in that: A guide portion is provided in the support portion, which can abut against the sidewall of the substrate to limit the position of the substrate relative to the support portion. A conductive path is provided on the surface of each of the support portion and the guide portion to connect the guide portion to the connecting portion. The resistance between the guide portion and the connecting portion is higher than the resistance between the contact portion and the connecting portion.

6. A substrate transport method, characterized in that, include: The step of positioning the upper surface of the non-conductive support portion opposite the substrate to support the substrate; The step of moving the support portion to transport the substrate by means of a moving mechanism connected to the support portion via a grounded connection portion; The step of supporting the lower surface of the substrate by using a conductive contact portion provided on the upper surface of the support portion to abut against the lower surface of the substrate in a manner that the substrate does not contact the support portion; and The step of providing a strip-shaped conductive path to connect the contact portion and the connecting portion, thereby moving the charge on the substrate to the connecting portion. The strip-shaped conductive path is provided with a bend, which is formed in such a way that the spacing between the strip-shaped conductive paths is more than twice the width of the strip-shaped conductive path.

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