Substrate processing apparatus and substrate processing method

Abstract

A substrate processing apparatus and a substrate processing method capable of efficiently processing a substrate with ozone water are provided. A substrate processing apparatus of one embodiment of the present application includes a substrate rotating portion, an ozone water releasing portion, a pressurizing portion, and a control portion. The substrate rotating portion holds and rotates a substrate. The ozone water releasing portion has a length of more than or equal to the radius of the substrate and can release ozone water to the substrate. The pressurizing portion pressurizes ozone water to a pressure higher than atmospheric pressure at a position upstream of the ozone water releasing portion. The control portion controls each portion. In addition, the control portion controls the substrate rotating portion to rotate the substrate while releasing ozone water, and reduces the release rate of ozone water to the substrate after the ozone water is released. The control portion increases the release rate of ozone water to the substrate after the release rate of ozone water is reduced. Furthermore, the control portion rotates the substrate at least while the release rate of ozone water to the substrate is reduced.

Description

Technical Field

[0001] The embodiments of the present invention relate to a substrate processing apparatus and a substrate processing method. Background Technology

[0002] In the prior art, there are known techniques for treating substrates such as semiconductor wafers (hereinafter also referred to as wafers) using ozone water (see Patent Document 1).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2001-326210 Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] This invention provides a technique for efficiently treating substrates using ozone water.

[0008] Technical solutions for solving technical problems

[0009] One aspect of the substrate processing apparatus of the present invention includes a substrate rotation unit, an ozone water release unit, a pressurization unit, and a control unit. The substrate rotation unit holds and rotates the substrate. The ozone water release unit has a length exceeding the radius of the substrate and is capable of releasing ozone water onto the substrate. The pressurization unit pressurizes the ozone water to a pressure higher than atmospheric pressure at an upstream position above the ozone water release unit. The control unit controls each unit. Furthermore, the control unit releases ozone water onto the substrate held by the substrate rotation unit, reduces the release flow rate of the ozone water onto the substrate after releasing the ozone water, and increases the release flow rate of the ozone water onto the substrate after reducing the release flow rate. Furthermore, the control unit rotates the substrate at least when reducing the release flow rate of the ozone water onto the substrate.

[0010] Invention Effects

[0011] According to the present invention, substrates can be treated efficiently using ozone water. Attached Figure Description

[0012] Figure 1 This is a schematic diagram showing the outline structure of the substrate processing system in the implementation method.

[0013] Figure 2 This is a schematic diagram showing the piping structure of the substrate processing system in an embodiment.

[0014] Figure 3 This is a schematic diagram illustrating an example of the structure of the processing unit in an implementation method.

[0015] Figure 4 This is a top view showing an example of the structure of the release nozzle in an embodiment.

[0016] Figure 5 This is a flowchart illustrating the substrate processing flow performed by the substrate processing system in the implementation method.

[0017] Figure 6 This is a flowchart illustrating the ozone water treatment process performed by the substrate processing system in the embodiment.

[0018] Figure 7 This is a top view showing a structural example of the release nozzle of a modified embodiment 1.

[0019] Figure 8 This is a flowchart illustrating the ozone water treatment process performed by the substrate processing system of Modified Example 1 of the embodiments.

[0020] Figure 9 This is a top view showing a structural example of the release nozzle in a modified embodiment 2.

[0021] Figure 10 This is a cross-sectional view showing the structure of the processing unit in Modified Example 3 of the implementation method.

[0022] Figure 11 This is a flowchart illustrating the ozone water treatment process performed by the substrate processing system in Modified Example 3 of the implementation.

[0023] Figure 12 This is a schematic diagram showing the outline structure of the substrate processing system of Variation 4 of the implementation method.

[0024] Figure 13 This is a schematic diagram showing the piping structure of the substrate processing system in Variation 4 of the implementation method.

[0025] Explanation of reference numerals in the attached figures

[0026] W-shaped wafer (an example of a substrate)

[0027] 1.1A Substrate Processing System (An Example of a Substrate Processing Device)

[0028] 5. Ozone Water Generation Section

[0029] 16 processing units

[0030] 18 Control Department

[0031] 33. Pump (an example of a pressurization unit)

[0032] 64 Heaters

[0033] 80 housing

[0034] 90 Substrate Rotation Section

[0035] 94 Heating Mechanism

[0036] 95 Embankment Department

[0037] 101. Release nozzle (an example of an ozone water release unit)

[0038] 120 Gas Inlet Section

[0039] L Ozone water. Detailed Implementation

[0040] Hereinafter, with reference to the accompanying drawings, embodiments of the substrate processing apparatus and substrate processing method disclosed in this application will be described in detail. Furthermore, the present invention is not limited to the embodiments shown below. It should also be noted that the drawings are merely illustrative, and the dimensional relationships and ratios of the elements may sometimes differ from reality. Moreover, the drawings may sometimes include portions with different dimensional relationships and ratios.

[0041] There are known techniques for treating substrates such as semiconductor wafers (hereinafter also referred to as wafers) using ozone water. However, there is room for further improvement in the aforementioned prior art, which can efficiently treat substrates using ozone water.

[0042] Therefore, people are looking for a technology that can overcome the above problems and use ozone water to efficiently treat substrates.

[0043] <Overview of Substrate Processing System>

[0044] First, refer to Figure 1 The general structure of the substrate processing system 1 of the embodiment will be described. Figure 1 This is a diagram showing the outline structure of the substrate processing system 1 according to the embodiment. The substrate processing system 1 is an example of a substrate processing apparatus. In the following text, to clarify positional relationships, the X-axis, Y-axis, and Z-axis are defined as mutually orthogonal, with the positive direction of the Z-axis being the vertically upward direction.

[0045] like Figure 1 As shown, the substrate processing system 1 includes an infeed / outfeed station 2 and a processing station 3. The infeed / outfeed station 2 and the processing station 3 are arranged adjacent to each other.

[0046] The infeed / outfeed station 2 includes a transmitter placement section 11 and a transport section 12. The transmitter placement section 11 holds a plurality of transmitters (FOUP) C, which hold multiple substrates, in this embodiment, semiconductor wafers W (hereinafter referred to as "wafer W"), in a horizontal position.

[0047] The transport section 12 is disposed adjacent to the transporter placement section 11, and a substrate transport device 13 and a transfer section 14 are disposed inside it. The substrate transport device 13 includes a wafer holding mechanism for holding the wafer W. In addition, the substrate transport device 13 is movable in the horizontal and vertical directions and can rotate about the vertical axis, and the wafer holding mechanism transports the wafer W between the transporter C and the transfer section 14.

[0048] Processing station 3 is disposed adjacent to conveying unit 12. Processing station 3 includes conveying unit 15 and multiple processing units 16. Processing unit 16 is an example of substrate processing unit. Multiple processing units 16 are arranged on both sides of conveying unit 15.

[0049] The transport unit 15 has a substrate transport device 17 inside. The substrate transport device 17 includes a wafer holding mechanism for holding the wafer W. In addition, the substrate transport device 17 is movable in the horizontal and vertical directions and can rotate about the vertical axis, and the wafer holding mechanism transports the wafer W between the transfer unit 14 and the processing unit 16.

[0050] Processing unit 16 performs prescribed substrate processing on the wafer W transported by substrate transport device 17. Details of the processing unit 16 will be described later.

[0051] Additionally, the substrate processing system 1 includes a control device 4. The control device 4 is, for example, a computer, including a control unit 18 and a storage unit 19. The storage unit 19 stores programs for controlling various processes executed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the programs stored in the storage unit 19.

[0052] Furthermore, the aforementioned program can also be stored in a computer-readable storage medium and installed from that storage medium into the storage unit 19 of the control device 4. Examples of computer-readable storage media include hard disks (HD), floppy disks (FD), optical disks (CD), magneto-optical disks (MO), and memory cards.

[0053] The substrate processing system 1 also includes an ozone water generation unit 5. The ozone water generation unit 5 generates ozone water with a predetermined ozone concentration and supplies the generated ozone water to the processing unit 16. Details regarding the ozone water generation unit 5 will be explained later.

[0054] In the substrate processing system 1 configured as described above, firstly, the substrate transport device 13 of the delivery station 2 takes out the wafer W from the transporter C placed in the transporter placement section 11 and places the taken-out wafer W in the transfer section 14. The wafer W placed in the transfer section 14 is taken out from the transfer section 14 by the substrate transport device 17 of the processing station 3 and sent to the processing unit 16.

[0055] After being processed by the processing unit 16, the wafer W fed into the processing unit 16 is sent out from the processing unit 16 by the substrate transport device 17 and placed in the transfer section 14. Then, the processed wafer W placed in the transfer section 14 is sent back to the carrier C of the transmitter placement section 11 by the substrate transport device 13.

[0056] <Piping Structure of Substrate Processing System>

[0057] Below, refer to Figure 2 The piping structure of substrate processing system 1 will be described. Figure 2 This is a schematic diagram showing the piping structure of the substrate processing system 1 according to the embodiment.

[0058] exist Figure 2 The example shows a configuration with six processing regions X, each containing a processing unit 16. For ease of understanding, the piping structure within processing regions X other than those shown in the lower left diagram is omitted from the illustration.

[0059] like Figure 2 As shown, the substrate processing system 1 of the embodiment includes an ozone water generation unit 5 and multiple processing units 16.

[0060] The ozone water generation unit 5 generates ozone water with a specified ozone concentration. The aforementioned "specified ozone concentration" refers to, for example, the ability to remove (strip) ozone formed on the wafer W (refer to...). Figure 1 The ozone concentration of the resist film is, for example, in the range of 100 mg / L to 400 mg / L.

[0061] Furthermore, the substrate processing system 1 of the embodiment includes a processing liquid supply passage 21 provided from the ozone water generation unit 5 to a plurality of processing units 16. The processing liquid supply passage 21 is connected between the DIW supply source 22a and the processing units 16.

[0062] The processing liquid supply passage 21 is formed by sequentially connecting the first supply passage 22, the tank 23, the second supply passage 24, and the third supply passage 60.

[0063] The first supply passage 22 supplies DIW (Deionized Water), which serves as the raw material for ozone water, to tank 23. The first supply passage 22 includes, from the upstream side, a DIW supply source 22a, a degassing module 22b, a cooler 22c, a valve 22d, a pressure regulating valve 22e, and a flow meter 22f.

[0064] The DIW supply source 22a is, for example, a tank for storing DIW. The degassing module 22b removes dissolved gases such as nitrogen from the DIW supplied from the DIW supply source 22a. By removing the dissolved gases contained in the DIW using the degassing module 22b, ozone gas can be efficiently dissolved in the DIW.

[0065] Cooler 22c cools the DIW flowing through the first supply passage 22 to a specified temperature (e.g., 10°C to 20°C). By cooling the DIW with cooler 22c, ozone gas can be effectively dissolved in the DIW.

[0066] The pressure regulating valve 22e adjusts the flow rate of DIW supplied to tank 23 based on the flow rate of DIW measured by the flow meter 22f. That is, the pressure regulating valve 22e implements feedback control based on the flow rate of DIW measured by the flow meter 22f.

[0067] Downstream of the flow meter 22f in the first supply passage 22, a confluence section 27 is provided. Furthermore, an acidic liquid supply section 26 is connected to the confluence section 27.

[0068] The acid solution supply unit 26 supplies acid solutions such as organic acids (citric acid, acetic acid, etc.), hydrochloric acid, and sulfuric acid to the first supply passage 22 of the treatment solution supply passage 21. In this embodiment, by supplying acid solutions to the DIW to adjust the pH value of the DIW to acidic, the concentration of ozone dissolved in the DIW can be increased.

[0069] The acid solution supply unit 26 includes, in sequence from the upstream side of the acid solution supply passage 26a, an acid solution supply source 26b, a valve 26c, a pressure regulating valve 26d, and a flow meter 26e. The acid solution supply source 26b is, for example, a generation cabinet or a circulation pipeline capable of generating acid solution.

[0070] The pressure regulating valve 26d adjusts the flow rate of the acid solution supplied to the first supply passage 22 based on the flow rate of the acid solution measured by the flow meter 26e. That is, the pressure regulating valve 26d implements feedback control based on the flow rate of the acid solution measured by the flow meter 26e.

[0071] A filter 28 and a concentration meter 29 are provided downstream of the confluence section 27 in the first supply passage 22. The filter 28 is used to remove particulate matter and other contaminants contained in the DIW flowing through the first supply passage 22 and the acid solution flowing through the acid solution supply passage 26a. The concentration meter 29 measures the pH value of the DIW flowing through the first supply passage 22.

[0072] Then, the DIW, whose pH value has been adjusted by mixing with the acidic solution in the confluence section 27, is stored in tank 23. A second supply passage 24 is connected to the bottom of the tank 23.

[0073] Additionally, tank 23 is connected to the discharge unit DR via valve 31. Therefore, control unit 18 (see reference) Figure 1 When replacing the DIW in tank 23, valve 31 can be controlled to discharge the DIW in tank 23 to the discharge section DR.

[0074] The second supply passage 24 is located between the tank 23 and the multiple branches 50, and sequentially includes, from the upstream side, a mixing section 32, a pump 33, a filter 34, a flow meter 35, a concentration meter 36, and a valve 37. The pump 33 is an example of a pressurization section. In addition, an ozone gas supply passage 38 is connected to the mixing section 32.

[0075] Ozone gas supply passage 38 supplies ozone gas to mixing section 32. Ozone gas supply passage 38 includes, from upstream side, ozone gas generating section 39, filter 40, valve 41 and check valve 42.

[0076] The ozone gas generating unit 39 generates ozone gas from oxygen using known technology. Oxygen, as a raw material for ozone gas, is supplied to the ozone gas generating unit 39 from the oxygen supply unit 44. The oxygen supply unit 44 has, in sequence from the upstream side of the oxygen supply passage 44a, an oxygen supply source 44b, a pressure regulating valve 44c, and a valve 44d. The oxygen supply source 44b is, for example, a tank for storing oxygen.

[0077] In addition, Figure 2 Although not illustrated, the ozone gas generating unit 39 is connected to a cooling water supply unit for supplying cooling water and a cooling water discharge unit for discharging the used cooling water.

[0078] Filter 40 is used to remove particulate matter and other pollutants contained in the ozone gas flowing through ozone gas supply passage 38. Check valve 42 prevents ozone gas from flowing back from mixing section 32.

[0079] Furthermore, in this embodiment, the ozone water generation unit 5 is connected to the ozone gas removal unit 46 via a valve 45. The ozone gas removal unit 46 renders the ozone gas harmless and discharges the rendered ozone gas from the exhaust gas unit EXH to the outside.

[0080] Therefore, when ozone gas generating unit 39 is not able to generate ozone gas of sufficient quality, control unit 18 can use ozone gas removal unit 46 to render the ozone gas of insufficient quality harmless by opening valve 45.

[0081] Therefore, according to the embodiment, only ozone gas of sufficient quality can be supplied to the mixing unit 32, so that ozone water of good quality can be generated.

[0082] The mixing unit 32 mixes ozone gas supplied from the ozone gas supply passage 38 into the DIW liquid flowing in the second supply passage 24, whose pH value has been adjusted, thereby dissolving the ozone in the DIW. The mixing unit 32 can, for example, use a foaming method with a bubbler having fine holes or a jetting method that blows ozone gas into a high-speed water flow to dissolve the ozone in the pH-adjusted DIW.

[0083] Furthermore, the mixing unit 32 in the embodiment is not limited to devices that dissolve ozone in the DIW by foaming or spraying. For example, ozone gas can also be mixed into the DIW by membrane dissolution through a membrane.

[0084] Pump 33 pressurizes the mixture obtained by dissolving ozone in DIW to a pressure higher than atmospheric pressure. In this way, by pressurizing the mixture obtained by dissolving ozone in DIW, ozone water with a specified ozone concentration can be generated efficiently.

[0085] This is because the mole fraction M of ozone gas dissolved in DIW, which is the raw material liquid, is presumed to follow Henry's law as shown in equation (1), according to which the mole fraction M of dissolved ozone gas is proportional to the partial pressure P of ozone in the gas.

[0086] M=H -1 ·P……(1)

[0087] H: Henry's constant

[0088] Furthermore, in the embodiment, by pressurizing the ozone water in the second supply passage 24 with pump 33, the ozone water can be evenly supplied to multiple processing units 16.

[0089] Filter 34 removes particulate matter and other pollutants from the ozone water flowing through the second supply passage 24. Furthermore, filter 34 is connected to a curved pipeline that removes gases mixed into the ozone water and returns them to tank 23; however, the diagram of this curved pipeline is omitted.

[0090] The concentration meter 36 measures the ozone concentration of the ozone water flowing through the second supply passage 24. The control unit 18 adjusts the ozone concentration of the ozone water generated by the ozone water generating unit 5 based on the ozone concentration of the ozone water measured by the concentration meter 36.

[0091] For example, if the ozone concentration of the ozone water measured by the concentration meter 36 is lower than the specified ozone concentration, the control unit 18 increases the flow rate of the acid solution supplied from the acid solution supply unit 26. As a result, the pH value of the DIW supplied from the first supply passage 22 decreases, thereby increasing the ozone concentration of the ozone water generated by the ozone water generation unit 5.

[0092] In addition, if the ozone concentration of the ozone water measured by the concentration meter 36 is lower than the specified ozone concentration, the control unit 18 may increase at least one of the flow rate and concentration of ozone gas supplied from the ozone gas supply passage 38.

[0093] As a result, the amount of ozone molecules mixed in the mixing section 32 increases, thereby increasing the ozone concentration of the ozone water generated by the ozone water generation section 5.

[0094] On the other hand, if the ozone concentration of the ozone water measured by the concentration meter 36 is higher than the specified ozone concentration, the control unit 18 reduces the flow rate of the acid solution supplied from the acid solution supply unit 26.

[0095] As a result, the pH value of the DIW supplied from the first supply passage 22 increases, thereby reducing the ozone concentration of the ozone water generated by the ozone water generation unit 5.

[0096] In addition, if the ozone concentration of the ozone water measured by the concentration meter 36 is higher than the specified ozone concentration, the control unit 18 may also reduce at least one of the flow rate and concentration of ozone gas supplied from the ozone gas supply passage 38.

[0097] As a result, the amount of ozone molecules mixed in the mixing section 32 is reduced, thus reducing the ozone concentration of the ozone water generated by the ozone water generation section 5.

[0098] In this embodiment, the ozone concentration of the ozone water generated by the ozone water generation unit 5 is controlled by feedback based on the ozone concentration of the ozone water measured by the concentration meter 36. This allows for the stable supply of ozone water with a predetermined ozone concentration to the treatment unit 16.

[0099] Downstream of the valve 37 in the second supply passage 24, the second supply passage 24 branches in a parallel manner. Then, a third supply passage 60 further branches out from the branch portion 50 of the parallel branching second supply passage 24, and the third supply passage 60 is connected to the processing unit 16.

[0100] exist Figure 2 In the example, the second supply path 24 branches in a parallel three-row manner, and the branched second supply path 24 supplies ozone water to the two processing units 16 respectively.

[0101] The third supply passage 60, starting from the upstream side, includes a pressure regulating valve 61, a flow meter 62, a valve 63, and a heater 64. The pressure regulating valve 61 adjusts the flow rate of ozone water flowing in the third supply passage 60 based on the flow rate of ozone water measured by the flow meter 62. That is, the pressure regulating valve 61 implements feedback control based on the flow rate of ozone water measured by the flow meter 62.

[0102] Heater 64 heats the ozone water flowing through the second supply passage 24 to a specified temperature (e.g., 60°C). This allows the heated ozone water to be supplied to the processing unit 16, thereby improving the ozone water's processing performance on the wafer W.

[0103] Furthermore, the processing unit 16 is connected to the discharge section DR via the discharge passage 65. This allows the processing liquid used in the processing of the wafer W within the processing unit 16 to be discharged to the discharge section DR.

[0104] As explained above, in this embodiment, after ozone gas is mixed into the DIW in the mixing unit 32 to generate ozone water, the ozone water is pressurized to a pressure higher than atmospheric pressure using a pump 33. This allows for the efficient generation of high-concentration ozone water. Therefore, according to this embodiment, the wafer W can be efficiently processed using ozone water.

[0105] Furthermore, in this embodiment, after the ozone water is pressurized by pump 33, it is heated by heater 64 just before being released into wafer W. Therefore, compared to heating the ozone water before pressurizing it with pump 33 or before generating ozone water in mixing section 32, ozone water with a predetermined ozone concentration can be generated more efficiently. This is because ozone is difficult to dissolve in DIW at higher temperatures.

[0106] In addition, in the substrate processing system 1 of the embodiment, a plurality of second supply passages 24 are connected to the ozone water generation unit 5 via circulation passages 70.

[0107] Therefore, unused ozone water in the processing unit 16 can be returned to the ozone water generation unit 5 via the circulation path 70. Thus, according to the embodiment, unused ozone water can be effectively utilized to further generate ozone water, thereby enabling efficient generation of ozone water in the ozone water generation unit 5.

[0108] The circulation passage 70 branches into circulation passage 70a and circulation passage 70b at branch 71. Circulation passage 70a, starting from the upstream side, includes a valve 72, a pressure regulating valve 73, a flow meter 74, and a cooler 75, and is connected to the tank 23 of the ozone water generating unit 5. Circulation passage 70b, starting from the upstream side, includes a valve 76 and a pressure regulating valve 77, and is connected to the upstream side of the mixing section 32 in the second supply passage 24.

[0109] The pressure regulating valve 73 adjusts the flow rate of ozone water returning to tank 23 based on the flow rate of ozone water measured by the flow meter 74. That is, the pressure regulating valve 73 implements feedback control based on the flow rate of ozone water measured by the flow meter 74.

[0110] Cooler 75 cools the ozone water flowing through circulation passage 70a to a specified temperature (e.g., 10°C to 20°C). In this embodiment, by cooling the ozone water flowing through circulation passage 70a with the aforementioned cooler 75, the temperature rise of the DIW supplied from DIW supply source 22a to tank 23 can be suppressed.

[0111] Therefore, according to the embodiment, ozone water generating unit 5 can stably generate ozone water of the desired concentration.

[0112] In this embodiment, the control unit 18 keeps valve 72 of circulation passage 70a open and valve 76 of circulation passage 70b closed until the ozone water generated by the ozone water generating unit 5 reaches a predetermined ozone concentration. Then, the control unit 18 returns the ozone water generated by the ozone water generating unit 5 to the tank 23 of the ozone water generating unit 5 via circulation passage 70 and circulation passage 70a.

[0113] Therefore, in this implementation method, ozone water with a specified ozone concentration can be generated efficiently in a short time.

[0114] Then, when the processing of wafer W begins in the processing unit 16 after generating ozone water with a specified ozone concentration, the control unit 18 changes valve 72 of circulation passage 70a from the open state to the closed state and changes valve 76 of circulation passage 70b from the closed state to the open state.

[0115] In this way, by returning the temporarily generated high-concentration ozone water to the upstream of the mixing section 32, it is possible to prevent the ozone concentration of the temporarily generated ozone water from decreasing before the next generation of ozone water. Therefore, according to the embodiment, high-concentration ozone water can be generated more efficiently.

[0116] <Structure of the Processing Unit>

[0117] Below, refer to Figure 3 and Figure 4 The structure of the processing unit 16 will be described. Figure 3 This is a schematic diagram illustrating an example of the structure of the processing unit 16 in the embodiment. For example... Figure 3 As shown, the processing unit 16 includes a housing 80, a substrate rotation section 90, a liquid supply section 100, a recovery cup-shaped body 110, and a gas inlet section 120.

[0118] The housing 80 houses the substrate rotating part 90, the liquid supply part 100, and the recovery cup-shaped body 110. An FFU (Fan Filter Unit) 81 is provided on the top of the housing 80. The FFU 81 forms a downflow within the housing 80.

[0119] The substrate rotation section 90 includes a holding section 91, a support section 92, a drive section 93, and a heating mechanism 94, and performs liquid treatment on the placed wafer W. The holding section 91 holds the wafer W horizontally. The support section 92 is a member extending in the vertical direction, with its root end rotatably supported by the drive section 93, and its front end horizontally supporting the holding section 91. The drive section 93 rotates the support section 92 about a vertical axis.

[0120] The aforementioned substrate rotation section 90 rotates the holding section 91 supported by the support section 92 by rotating the support section 92 with the drive section 93, thereby rotating the wafer W held by the holding section 91.

[0121] On the upper surface of the holding portion 91 of the substrate rotation portion 90, a holding member 91a is provided to hold the wafer W from the side. The wafer W is held horizontally by the holding member 91a in a state slightly away from the upper surface of the holding portion 91. Furthermore, the wafer W is held by the holding portion 91 with the surface to be processed facing upward.

[0122] The heating mechanism 94 heats the wafer W held by the holding part 91 to a predetermined temperature. The heating mechanism 94 is provided, for example, in a manner that allows it to move up and down on the lower surface side of the wafer W held by the holding part 91. Moreover, the heating mechanism 94 can uniformly heat the entire wafer W by approaching or contacting the entire lower surface of the wafer W.

[0123] In addition, a gas release section (not shown) is provided in the substrate rotation section 90. This gas release section releases inactive gas to the lower surface of the wafer W so that the processing liquid does not spread to the lower surface of the wafer W.

[0124] The liquid supply unit 100 supplies ozone water to the wafer W. The liquid supply unit 100 includes: a release nozzle 101; an arm 102 that horizontally supports the release nozzle 101; and a moving mechanism 103 that rotates and raises the arm 102.

[0125] The release nozzle 101 is an example of an ozone water release unit, and is a nozzle connected to the third supply passage 60 of the treatment liquid supply passage 21. The lower surface 101a of the release nozzle 101 is opposite to the upper surface of the wafer W. Details regarding the release nozzle 101 will be explained later.

[0126] The recovery cup 110 is configured to surround the holding part 91, and the rotation of the holding part 91 collects the processing liquid that splashes from the wafer W. A drain port 111 is formed at the bottom of the recovery cup 110, and the processing liquid collected by the recovery cup 110 is discharged from the drain port 111 to the outside of the processing unit 16 via the valve 113.

[0127] In addition, an exhaust port 112 is formed at the bottom of the recovery cup 110, and the gas supplied from the FFU81 is discharged from the exhaust port 112 to the outside of the processing unit 16 via the valve 114.

[0128] The gas inlet 120 introduces an inert gas into the interior of the housing 80. The gas inlet 120 includes, sequentially from the upstream side of the gas supply passage 120a, an inert gas supply source 120b, a pressure regulating valve 120c, and a valve 120d. The inert gas supply source 120b is, for example, a tank storing inert gases such as nitrogen or argon.

[0129] Figure 4 This is a top view showing a structural example of the release nozzle 101 according to the embodiment. (See attached image.) Figure 4 As shown, the release nozzle 101 covers the substrate rotating part 90 (see reference). Figure 3 The entire upper surface of the wafer W is maintained in a specific manner.

[0130] Furthermore, on the lower surface 101a of the release nozzle 101 (refer to...) Figure 3 The wafer W has multiple release ports 104, each corresponding to a region on the upper surface of the wafer W. Thus, the release port 101 of this embodiment can simultaneously release ozone water onto the entire wafer W.

[0131] Furthermore, according to the inventor's evaluation, it is effective to allow the ozone water from the release nozzle to come into direct contact with the resist film in order to peel off the resist film on the wafer W.

[0132] As an example, a resist film is formed on wafer W, and ozone water is released onto wafer W while it is being rotated using a slender nozzle that extends radially from the center of wafer W to the outer periphery.

[0133] Then, through this process, the resist film is peeled off in a circular pattern from the center to the outer periphery of the wafer W at intervals provided at the release ports of the elongated nozzle. That is, the portion where the ozone water is in direct contact with the resist film is peeled off.

[0134] It can be assumed, for example, as shown in Chemical Formula 1 below, that when the resist film reacts with ozone water, the resist film becomes a water-soluble polymer and is removed, while the ozone decomposes and disappears (i.e., the ozone water is deactivated).

[0135] [Chemical Formula 1]

[0136]

[0137] Therefore, in the processing of wafer W with ozone water, it is preferable to directly release ozone water onto the entire upper surface of wafer W and bring it into contact with it.

[0138] <Substrate Processing Flow>

[0139] Below, refer to Figure 5 and Figure 6 The substrate processing flow of the implementation method is explained. Figure 5 This is a flowchart illustrating the substrate processing flow performed by the substrate processing system 1 in the embodiment.

[0140] First, the control unit 18 controls the processing unit 16, etc., to hold the wafer W that is fed into the processing unit 16 using the holding part 91 of the substrate rotation part 90 (step S101). Then, the control unit 18 controls the heating mechanism 94, etc., to heat the wafer W to a predetermined temperature (step S102).

[0141] In this embodiment, by heating the wafer W before the subsequent ozone water treatment, the ozone water treatment of the wafer W can be carried out at a high temperature environment, thereby improving the treatment performance of the ozone water on the wafer W.

[0142] Next, the control unit 18 performs ozone water treatment on the wafer W (step S103). Details of the ozone water treatment will be explained later. Then, the control unit 18 controls the rinsing fluid release nozzle (not shown) provided in the processing unit 16 to perform rinsing treatment on the wafer W using a rinsing fluid such as DIW (step S104).

[0143] Next, the control unit 18 controls the cleaning fluid release nozzle (not shown) provided in the processing unit 16 to perform a cleaning process on the wafer W using a cleaning fluid such as SC-1 (an aqueous solution containing ammonium hydroxide and hydrogen peroxide) (step S105). Then, the control unit 18 controls the aforementioned rinsing fluid release nozzle to perform a rinsing process on the wafer W using a rinsing fluid such as DIW (step S106).

[0144] Finally, the control unit 18 controls the processing unit 16 to perform a drying process (e.g., spin drying) on ​​the wafer W (step S107), ending the series of processes on the wafer W.

[0145] Figure 6 This is a flowchart illustrating the ozone water treatment process performed by the substrate processing system 1 in the embodiment. First, the control unit 18 sets the count value (counter) n, which is used to count the number of repetitions of ozone water treatment, to 1 (step S201).

[0146] Next, the control unit 18 controls the processing unit 16 to increase the pressure of the processing space of the chip W to a pressure higher than atmospheric pressure (step S202).

[0147] Specifically, firstly, the control unit 18 closes the inlet (not shown) of the wafer W located in the housing 80, and changes the valve 113 of the drain port 111 and the valve 114 of the exhaust port 112 to the closed state. As a result, the control unit 18 isolates the interior of the housing 80 from the external space.

[0148] Next, the control unit 18 controls the gas introduction unit 120 to introduce an inactive gas into the interior of the housing 80, which is isolated from the external space. As a result, the control unit 18 can pressurize the processing space of the wafer W located within the housing 80 to a pressure higher than atmospheric pressure.

[0149] Following the high-pressure treatment of the processing space of the wafer W, the control unit 18 controls the processing unit 16 to release ozone water onto the upper surface of the wafer W held by the substrate rotation unit 90 (step S203).

[0150] In step S203, the process is performed without rotating the wafer W (i.e., the wafer W rotates at zero speed), and ozone water is sprayed onto the entire upper surface of the wafer W using the release nozzle 101. Furthermore, the ozone water released from the release nozzle 101 is heated by the heater 64 (see reference). Figure 2 Heat to the specified temperature.

[0151] Next, the control unit 18 controls the processing unit 16 to stop releasing ozone water to the wafer W (step S204). That is, the control unit 18 makes the release flow rate of ozone water released to the wafer W zero.

[0152] As a result, the released ozone water remains on the upper surface of wafer W due to surface tension, forming a layer of ozone water (the so-called puddle).

[0153] Then, the control unit 18 holds the wafer W for a predetermined time while the ozone pool has formed. As described above, the ozone in the pool reacts with the resist film on the upper surface of the wafer W, and the resist film is removed from the wafer W.

[0154] Here, in the embodiment, the processing space of the wafer W is pressurized during the process of step S202 described above, so that the ozone concentration of the ozone water released into the wafer W can be suppressed from decreasing due to the pressure reduction in the processing space.

[0155] That is, in the embodiment, by pressurizing the processing space of the wafer W, the concentration of ozone water can be maintained even after release, thereby improving the processing performance of ozone water on the wafer W.

[0156] Next, the control unit 18 controls the processing unit 16 to reduce the pressure in the processing space of the wafer W to the same as atmospheric pressure (step S205). Specifically, first, the control unit 18 controls the gas introduction unit 120 to stop introducing inactive gas into the interior of the housing 80.

[0157] Next, the control unit 18 changes the valve 113 of the drain port 111 and the valve 114 of the vent port 112 to the open state. As a result, the control unit 18 is able to reduce the pressure of the processing space of the wafer W located in the housing 80 to the same pressure as atmospheric pressure.

[0158] Next, the control unit 18 controls the processing unit 16 to rotate the wafer W at a predetermined speed (step S206). As a result, the control unit 18 removes the puddles of ozone water formed on the upper surface of the wafer W.

[0159] Next, the control unit 18 controls the processing unit 16 to stop the wafer W from rotating (step S207). That is, the control unit 18 makes the rotational speed of the wafer W zero.

[0160] Next, the control unit 18 determines whether the count value n is greater than or equal to the predetermined number N (step S208). The information related to the predetermined number N is pre-stored in the storage unit 19.

[0161] Then, if the count value n is more than the prescribed number of times N (step S208, Yes), the control unit 18 completes a series of processes related to ozone water treatment.

[0162] On the other hand, if the count value n is not greater than the prescribed number of times N (step S208, No), the control unit 18 increases the count value n used to count the number of times ozone water treatment is repeated (step S209) and returns to the processing of step S202.

[0163] As explained above, in the ozone water treatment of the embodiment, after the release of ozone water to the wafer W is stopped and a puddle is formed, the wafer W is rotated to remove the puddle, and then ozone water is released after the wafer W stops rotating to form a puddle on the wafer W.

[0164] That is, in the ozone water treatment of this embodiment, the release and cessation of ozone water on the wafer W are repeatedly performed, and the wafer W is rotated when the release of ozone water stops. In other words, in the ozone water treatment of this embodiment, the process of forming a pool of ozone water on the wafer W is repeated a predetermined number of times.

[0165] Therefore, ozone water treatment can be repeatedly performed using fresh, undeactivated ozone water. Thus, according to the embodiment, wafer W can be efficiently treated using ozone water.

[0166] In addition, in the implementation, an example is given of releasing ozone water onto wafer W with the rotation speed of wafer W being zero. However, it is not necessary to make the rotation speed zero. It is sufficient to make the rotation speed smaller than the rotation speed at which the ozone water is thrown off the surface of wafer W.

[0167] That is, the rotational speed of the wafer W in steps S203-S204 and step S207 can be any value smaller than the rotational speed of the wafer W in step S206.

[0168] On the other hand, by releasing ozone water into the wafer W while keeping the wafer W's rotation speed at zero, the operation of the substrate rotation section 90 can be stopped, thus maintaining the interior of the housing 80 under better high pressure.

[0169] Therefore, according to the implementation method, by releasing ozone water into the wafer W while keeping the rotation speed of the wafer W at zero, the wafer W can be treated more efficiently using ozone water.

[0170] In addition, in the implementation, an example is given of removing ozone water from wafer W when the release flow rate of ozone water released to wafer W is zero, but it is not necessarily necessary to start removing ozone water after the release flow rate of ozone water is zero.

[0171] That is, the ozone water release flow rate in step S204 can be a smaller value than the ozone water release flow rate in step S203.

[0172] On the other hand, by removing the ozone water from the wafer W while keeping the release flow rate of the ozone water released to the wafer W at zero, the amount of ozone water used can be reduced.

[0173] Furthermore, in this embodiment, by simultaneously releasing ozone water onto the entire wafer W using the release nozzle 101, a good pool of ozone water can be formed across the entire wafer W even when the wafer W's rotational speed is low (e.g., zero). Therefore, according to this embodiment, the wafer W can be processed more efficiently using ozone water.

[0174] <Variation Example 1>

[0175] Below, refer to Figures 7-13 Various variations of the implementation method will be described. Figure 7 This is a top view showing a structural example of the release nozzle 101 of a modified embodiment 1.

[0176] like Figure 7 As shown, the release nozzle 101 in Modified Example 1 is a bar nozzle. The front end portion 101b of the release nozzle 101 is disposed above the center portion of the wafer W, and the root end portion 101c of the release nozzle 101 is disposed above the periphery portion of the wafer W.

[0177] Furthermore, on the lower surface 101a of the release nozzle 101, a plurality of release ports 104 are formed in a straight line from the front end 101b to the root end 101c. Moreover, in Modified Example 1, the substrate rotation portion 90 (see reference) is rotated along one side... Figure 2 Rotate one side to release ozone water through the release nozzle 101, which can release ozone water to the entire chip W.

[0178] Figure 8 This is a flowchart illustrating the ozone water treatment process performed by the substrate processing system 1 in a modified embodiment 1, showing the process compared to... Figure 5 The processing flow corresponding to step S103 shown is as follows.

[0179] First, the control unit 18 controls the processing unit 16 to rotate the wafer W at a low speed (step S301). Here, "rotating at a low speed" means rotating at a speed that does not dislodge the ozone water released onto the wafer W.

[0180] Next, the control unit 18 controls the processing unit 16 to release ozone water from the release nozzle 101, which is a strip-shaped nozzle, onto the upper surface of the wafer W, which is rotating at a low speed (step S302). As a result, the control unit 18 releases ozone water onto the entire upper surface of the wafer W.

[0181] Next, the control unit 18 controls the processing unit 16 to stop releasing ozone water onto the wafer W (step S303). Then, the control unit 18 controls the processing unit 16 to rotate the wafer W at high speed (step S304). As a result, the control unit 18 removes the ozone water from the surface of the wafer W.

[0182] That is, "rotating at high speed" means rotating at a speed sufficient to remove the ozone water released onto the wafer W. Therefore, the rotational speed of the wafer W in step S304 can be a greater value than the rotational speed of the wafer W in step S301.

[0183] Finally, the control unit 18 controls the processing unit 16 to stop the chip W from rotating (step S305), completing a series of processes related to ozone water treatment.

[0184] In this way, when using the release nozzle 101 as a strip nozzle, ozone gas is mixed into a low-temperature raw material liquid with an acidic pH value, and the generated ozone water is pressurized by pump 33, thus generating high-concentration ozone water. Therefore, according to Modified Example 1, wafer W can be efficiently processed using high-concentration ozone water.

[0185] In addition, in Modification 1, the ozone water to be released is heated by heater 64, and the wafer W is heated by heating mechanism 94, thereby enabling more efficient treatment of wafer W using ozone water.

[0186] <Variation Example 2>

[0187] Figure 9 This is a top view showing a structural example of the release nozzle 101 in modified embodiment 2. Figure 9 As shown, the release nozzle 101 of Modified Example 2 is a strip-shaped nozzle, which is different from that of Modified Example 1.

[0188] The front end portion 101b of the release nozzle 101 is configured to hang on the periphery of the chip W furthest from the moving mechanism 103, and the root end portion 101c of the release nozzle 101 is configured to hang on the periphery of the chip W closest to the moving mechanism 103.

[0189] Furthermore, a straight, slit-shaped release port 104 is formed on the lower surface 101a of the release nozzle 101, extending from the front end 101b to the root end 101c. Moreover, in Modified Example 2, ozone water can be released from the release nozzle 101 while moving it approximately perpendicular to the extension direction of the release port 104 using the moving mechanism 103, thus releasing ozone water onto the entire upper surface of the wafer W.

[0190] When using the release nozzle 101 as described above, ozone gas is mixed into a low-temperature raw material solution with an acidic pH, and the generated ozone water is pressurized using pump 33, thus generating high-concentration ozone water. Therefore, according to Modification 2, wafer W can be efficiently processed using high-concentration ozone water.

[0191] In addition, in Modification 2, the ozone water to be released is heated by heater 64, and the wafer W is heated by heating mechanism 94, thereby enabling more efficient treatment of wafer W using ozone water.

[0192] <Variation Example 3>

[0193] Figure 10 This is a cross-sectional view showing a structural example of the processing unit 16 in the modified example 3 of the implementation method.

[0194] In the above-described variation 3, the difference from the embodiment is that in the substrate rotation portion 90 (refer to...) Figure 3 A dam section of 95 is provided.

[0195] The aforementioned embankment section 95 is configured to move within the processing unit 16, and the embankment section 95 is as follows: Figure 10As shown, it is configured to, for example, contact the end Wa of the wafer W, and the upper end 95a can be positioned at a position higher than the upper surface Wb of the wafer W.

[0196] Therefore, when the ozone water L is sprayed onto the wafer W from the release nozzle 101, the ozone water L can be stored on the wafer W by the dam section 95 for processing. Moreover, in the modified example 3, the wafer W can be processed while supplying new ozone water L through the release nozzle 101, so the wafer W can be processed efficiently using ozone water L.

[0197] Figure 11 This is a flowchart illustrating the ozone water treatment process performed by the substrate processing system 1 in Modified Example 3 of the implementation scheme, showing the process in relation to... Figure 5 The processing flow corresponding to step S103 shown is as follows.

[0198] First, the control unit 18 controls the processing unit 16 to place the dam portion 95 on the end Wa of the wafer W (step S401). The processing in step S401 is performed with the wafer W not rotating.

[0199] Next, the control unit 18 controls the processing unit 16 to release ozone water L from the release nozzle 101 (which serves as a nozzle) onto the upper surface of the wafer W (step S402). As a result, the control unit 18 stores ozone water L on the wafer W and processes the wafer W with ozone water L while allowing it to overflow from the dam section 95.

[0200] Next, the control unit 18 controls the processing unit 16 to stop releasing ozone water L onto the wafer W (step S403). Then, the control unit 18 controls the processing unit 16 to cause the dam section 95 to leave the wafer W (step S404).

[0201] Next, the control unit 18 controls the processing unit 16 to rotate the wafer W at a predetermined speed (step S405). As a result, the control unit 18 removes the ozone water L from the wafer W.

[0202] Finally, the control unit 18 controls the processing unit 16 to stop the chip W from rotating (step S406), completing a series of processes related to ozone water treatment.

[0203] In this case, when using the dam section 95 for ozone water treatment, ozone gas is mixed into a low-temperature raw material solution with an acidic pH value, and the generated ozone water L is pressurized using pump 33, thereby generating high-concentration ozone water L. Therefore, according to Modification 3, the wafer W can be efficiently treated using high-concentration ozone water L.

[0204] Therefore, in Modification 3, the ozone water L to be released is heated by heater 64, and the wafer W is heated by heating mechanism 94, thereby enabling more efficient treatment of wafer W using ozone water L.

[0205] <Variation Example 4>

[0206] In the embodiments and various modifications described above, an example of ozone water treatment of wafer W is shown in a wafer-by-wafer processing manner, but the ozone water treatment in the embodiments is not limited to wafer-by-wafer processing. Figure 12 This is a schematic diagram showing the outline structure of the substrate processing system 1A of the modified embodiment 4.

[0207] Figure 12 The substrate processing system 1A of Modified Example 1 shown is another example of a substrate processing apparatus, capable of processing multiple wafers W simultaneously. The substrate processing system 1A of Modified Example 4 includes a carrier feeding and discharging unit 202, a batch forming unit 203, a batch mounting unit 204, a batch transport unit 205, a batch processing unit 206, and a control device 207.

[0208] The carrier feeding and discharging unit 202 includes: a carrier stage 220, a carrier conveying mechanism 221, carrier stock 222 and 223, and a carrier placement platform 224.

[0209] The carrier stage 220 holds multiple carriers 210 transported from the outside. The carrier 210 is a container that holds multiple (e.g., 25) wafers W arranged vertically in a horizontal orientation. The carrier transport mechanism 221 transports the carriers 210 between the carrier stage 220, carrier stacks 222 and 223, and carrier placement stage 224.

[0210] From the carrier 210 placed on the carrier stage 224, a plurality of wafers W before processing are delivered to the batch processing unit 206 by the substrate transport mechanism 230 described later. Moreover, the substrate transport mechanism 230 delivers the plurality of processed wafers W from the batch processing unit 206 into the carrier 210 placed on the carrier stage 224.

[0211] The batch forming unit 203 has a substrate transport mechanism 230, which is capable of forming batches. The batch consists of multiple (e.g., 50) wafers W that are processed simultaneously by combining wafers W housed in one or more carriers 210. The multiple wafers W forming a batch are arranged at intervals, for example, with their surfaces facing each other.

[0212] The substrate transport mechanism 230 transports multiple wafers W between the carrier 210 placed on the carrier stage 224 and the batch loading section 204.

[0213] The batch placement unit 204 has a batch transport table 240, which holds the batches transported by the batch transport unit 205 between the batch forming unit 203 and the batch processing unit 206 (and puts them into standby mode).

[0214] The batch transport stage 240 includes: a batch placement stage 241, which holds batches formed by the batch forming unit 203 before processing; and a batch placement stage 242, which holds batches processed by the batch processing unit 206. Multiple wafers W in a batch are placed in a front-to-back arrangement in an upright posture on the batch placement stages 241 and 242.

[0215] The batch transport unit 205 has a batch transport mechanism 250 that transports batches between the batch placement unit 204 and the batch processing unit 206, and inside the batch processing unit 206. The batch transport mechanism 250 has a track 251, a moving body 252, and a substrate holder 253.

[0216] Track 251 is arranged along the X-axis between batch placement section 204 and batch processing section 206. Moving body 252 is configured to hold multiple wafers W moving along track 251. Substrate holder 253 is provided on moving body 252 to hold multiple wafers W arranged in an upright position.

[0217] The batch processing unit 206 performs etching, cleaning, and drying processes on multiple wafers W in a batch. In the batch processing unit 206, two surface-level processing units 260, a cleaning device 270, and a drying device 280 are arranged along track 251.

[0218] The surface treatment unit 260 performs ozone water treatment and rinsing on multiple wafers W in a batch. The cleaning treatment device 270 cleans the substrate holder 253. The drying treatment device 280 dries multiple wafers W in a batch. Furthermore, the number of surface treatment units 260, cleaning treatment devices 270, and drying treatment devices 280 is not limited to [specific number missing]. Figure 12 Examples.

[0219] The surface treatment unit 260 includes a treatment tank 261 for ozone water treatment, a treatment tank 262 for rinsing, and retractable substrate holding sections 263 and 264. The treatment tanks 261 and 262 can hold a batch of wafers W. Furthermore, the treatment tank 261 stores ozone water L (see reference). Figure 13 Details regarding the processing slot 261 of the full-surface processing unit 260 will be explained later.

[0220] The processing tank 262 contains rinsing fluid for rinsing. In the substrate holding sections 263 and 264, multiple wafers W forming a batch are held in a front-to-back arrangement in an upright posture.

[0221] The surface treatment unit 260 holds the batches conveyed by the batch transport unit 205 using the substrate holding part 263, and immerses them in the ozone water L of the treatment tank 261 for ozone water treatment. In addition, the surface treatment unit 260 holds the batches conveyed by the batch transport unit 205 to the treatment tank 262 using the substrate holding part 264, and immerses them in the rinsing liquid of the treatment tank 262 for rinsing treatment.

[0222] The drying apparatus 280 includes a processing tank 281 and a liftable substrate holding section 282. A drying gas is supplied to the processing tank 281. In the substrate holding section 282, a batch of multiple wafers W are held in an upright, front-to-back arrangement.

[0223] The drying apparatus 280 holds the batches transported by the batch transport unit 205 in the substrate holding unit 282 and dries them with the processing gas supplied to the processing tank 281. The batches that have undergone drying in the processing tank 281 are then transported by the batch transport unit 205 to the batch placement unit 204.

[0224] The cleaning process device 270 supplies a cleaning solution to the substrate holder 253 of the batch conveying mechanism 250, and then supplies a drying gas, thereby performing a cleaning process on the substrate holder 253.

[0225] The control device 207 is, for example, a computer, including a control unit 208 and a storage unit 209. The storage unit 209 stores programs that control various processes executed in the substrate processing system 1A. The control unit 208 controls the operation of the substrate processing system 1A by reading and executing the programs stored in the storage unit 209.

[0226] In addition, the above program can also be stored in a computer-readable storage medium and installed from the storage medium into the storage unit 209 of the control device 207.

[0227] Figure 13 This is a schematic diagram showing the piping structure of the substrate processing system 1 in Modified Example 4 of the embodiment. For example... Figure 13 As shown, the treatment tank 261 for ozone water treatment includes an inner tank 261a and an outer tank 261b. The inner tank 261a is a box-shaped tank with an open top, capable of storing ozone water L inside.

[0228] A batch formed from multiple wafers W can be immersed in the inner tank 261a. The outer tank 261b is open at the top and is disposed around the upper part of the inner tank 261a. Ozone water L overflowing from the inner tank 261a flows into the outer tank 261b.

[0229] In addition, such as Figure 13 As shown, in the substrate processing system 1A of Modified Example 4, the ozone water generating unit 5 is constructed using an ozone water generating unit 6 capable of generating ozone water L internally.

[0230] For example, DIW is supplied from DIW supply source 22a via first supply passage 22 to the ozone water generating unit 6, and acid solution is supplied from acid solution supply unit 26. In addition, a second supply passage 24 is connected between the ozone water generating unit 6 and the processing unit 16, and a valve 48 is provided upstream of the specific pump 33 in the second supply passage 24.

[0231] Then, the ozone water L generated by the ozone water generating unit 5 is supplied to the inner tank 261a of the treatment tank 261 via the second supply passage 24.

[0232] Furthermore, in Modification 4, the outer tank 261b of the treatment tank 261 is connected to the ozone water generating unit 5 via the circulation passage 300. This allows the used ozone water L that overflows from the inner tank 261a and flows into the outer tank 261b to be returned to the ozone water generating unit 5.

[0233] Therefore, according to Modification Example 4, the used ozone water L can be effectively utilized to further generate ozone water L, so ozone water L can be generated efficiently in the ozone water generation section 5.

[0234] The circulation passage 300 has a valve 301, a pump 302, a filter 303 and a cooler 304 in sequence from the upstream side, and is connected to the ozone water generating unit 6 of the ozone water generating section 5.

[0235] Pump 302 creates a circulating flow of ozone water L through circulation passage 300. Filter 303 removes particulate matter and other pollutants contained in the used ozone water L flowing through circulation passage 300.

[0236] Cooler 304 cools the used ozone water L flowing through circulation passage 300 to a specified temperature (e.g., 10°C to 20°C). In Modification 4, by cooling the ozone water L flowing through circulation passage 300 with the aforementioned cooler 304, the temperature rise of the DIW supplied from DIW supply source 22a to ozone water generation unit 6 can be suppressed.

[0237] Therefore, according to Modification 4, the desired concentration of ozone water L can be stably generated using the ozone water generating unit 6.

[0238] Additionally, the upstream side of the recirculation passage 300, relative to valve 301, is connected to the discharge section DR via valve 305. Therefore, the control section 208 (see reference) Figure 12 When removing used ozone water L from the outer tank 261b and the circulation passage 300, the valve 305 can be controlled to discharge the used ozone water L to the discharge section DR.

[0239] In this way, when multiple wafers W are processed together using processing tank 261, ozone gas is mixed into a low-temperature raw material solution with an acidic pH value, and the generated ozone water L is pressurized using pump 33, thereby generating high-concentration ozone water L. Therefore, according to Modification 4, the ozone water L can be used to efficiently process wafers W.

[0240] Furthermore, in Modification 4, multiple wafers W can be processed simultaneously using ozone water L in the full-surface processing unit 260. Therefore, according to Modification 4, multiple wafers W with resist films formed can be processed with high throughput.

[0241] In addition, in Modification 4, by heating the ozone water L that is about to be released into the inner tank 261a with the heater 64 provided in the second supply passage 24, the wafer W can be processed more efficiently using the ozone water L.

[0242] The substrate processing apparatus (substrate processing system 1) of this embodiment includes a substrate rotation unit 90, an ozone water release unit (release nozzle 101), a pressurization unit (pump 33), and a control unit 18. The substrate rotation unit 90 holds the substrate (wafer W) and rotates it. The ozone water release unit (release nozzle 101) has a length exceeding the radius of the substrate (wafer W) and releases ozone water onto the substrate (wafer W). The pressurization unit (pump 33) pressurizes the ozone water to a pressure higher than atmospheric pressure upstream of the ozone water release unit (release nozzle 101). The control unit 18 controls each unit. Furthermore, the control unit 18 releases ozone water onto the substrate (wafer W) held by the substrate rotation unit 90, and after releasing ozone water, the control unit 18 reduces the release flow rate of the ozone water released onto the substrate (wafer W). Furthermore, after reducing the release flow rate of the ozone water, the control unit 18 increases the release flow rate of the ozone water released onto the substrate (wafer W). Furthermore, the control unit 18 rotates the substrate (wafer W) at least when the release flow rate of ozone water released to the substrate (wafer W) is reduced. This allows for more efficient processing of the wafer W using ozone water.

[0243] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the control unit 18 releases ozone water onto the substrate (wafer W) held by the substrate rotation unit 90. After releasing ozone water onto the substrate (wafer W), the control unit 18 reduces the release flow rate of the ozone water onto the substrate (wafer W) to zero. Moreover, after reducing the release flow rate of the ozone water to zero, the control unit 18 increases the release flow rate of the ozone water onto the substrate (wafer W), and rotates the substrate (wafer W) at least when the release flow rate of the ozone water onto the substrate (wafer W) is reduced to zero. This reduces the amount of ozone water used.

[0244] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the control unit 18 releases ozone water onto the substrate (wafer W) held by the substrate rotation unit 90. After releasing the ozone water, the control unit 18 reduces the release flow rate of the ozone water onto the substrate (wafer W) to zero and rotates the substrate (wafer W). After rotating the substrate (wafer W), the control unit 18 stops rotating the substrate (wafer W) and releases ozone water onto the substrate (wafer W). This allows for more efficient processing of the wafer W using ozone water.

[0245] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the substrate rotation unit 90 has a dam portion 95 that surrounds the end of the substrate (wafer W) when holding the substrate (wafer W). In addition, the control unit 18 releases ozone water onto the substrate (wafer W) held by the substrate rotation unit 90, causing the ozone water to overflow from the dam portion 95. Therefore, the wafer W can be processed more efficiently using ozone water L.

[0246] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the ozone water release unit (release nozzle 101) simultaneously releases ozone water onto the entire substrate (wafer W). This allows for more efficient processing of the wafer W using ozone water.

[0247] Furthermore, the substrate processing apparatus (substrate processing system 1) of the embodiment also includes a heater 64 for heating ozone water just before it is released onto the substrate (wafer W). This allows for more efficient processing of the wafer W using ozone water.

[0248] Furthermore, the substrate processing apparatus (substrate processing system 1) of the embodiment also includes a heating mechanism 94 for heating the substrate (wafer W) held by the substrate rotation unit 90. This allows for more efficient processing of the wafer W using ozone water.

[0249] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the heating mechanism 94 can move up and down to approach or contact the lower surface of the substrate (wafer W). This allows for more efficient processing of the wafer W using ozone water.

[0250] Furthermore, the substrate processing apparatus (substrate processing system 1) of the embodiment also includes: a housing 80 that isolates the processing space, which includes the substrate rotation section 90 and the ozone water release section (release nozzle 101), from the external space; and a gas inlet section 120 for introducing gas into the processing space. In addition, the control unit 18 controls the gas inlet section 120 to make the processing space operate at a pressure higher than atmospheric pressure. This allows for more efficient processing of the wafer W using ozone water.

[0251] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the control unit 18 sets the processing space to a pressure higher than atmospheric pressure before releasing ozone water into the substrate (wafer W) held by the substrate rotation unit 90. This allows for more efficient processing of the wafer W using ozone water.

[0252] The embodiments of the present invention have been described above, but the present invention is not limited to the above embodiments, and various changes can be made as long as they do not depart from its spirit.

[0253] It should be considered that the embodiments disclosed herein are illustrative in all respects and not limiting. In fact, the above embodiments can be implemented in a variety of ways. Furthermore, the above embodiments can be omitted, substituted, or modified in various ways without departing from the appended claims and their spirit.

Claims

1. A substrate processing apparatus, characterized in that, include: A substrate rotating section that holds and rotates the substrate; An ozone water release section having a length exceeding the radius of the substrate, capable of releasing ozone water onto the substrate; The pressurization section pressurizes the ozone water to a pressure higher than atmospheric pressure at a location upstream of the ozone water release section. and The control department that controls all departments. The control unit performs control so that: Ozone water is released onto the substrate held by the substrate rotation section. After releasing ozone water, the release rate of ozone water to the substrate is reduced. After reducing the ozone water release flow rate, the ozone water release flow rate to the substrate is increased. The substrate is rotated at least when the release flow rate of ozone water released onto the substrate is reduced.

2. The substrate processing apparatus as described in claim 1, characterized in that: The control unit performs control so that: Ozone water is released onto the substrate held by the substrate rotation section. After releasing ozone water onto the substrate, the release rate of the ozone water onto the substrate is reduced to zero. After reducing the ozone water release flow rate to zero, the ozone water release flow rate to the substrate is increased. The substrate is rotated at least when the release flow rate of ozone water released onto the substrate is reduced to zero.

3. The substrate processing apparatus as described in claim 1 or 2, characterized in that: The control unit performs control so that: Ozone water is released onto the substrate held by the substrate rotation section. After releasing the ozone water, the release rate of the ozone water onto the substrate is reduced to zero, and the substrate is rotated. After the substrate is rotated, the substrate is stopped rotating, and ozone water is released onto the substrate.

4. The substrate processing apparatus as described in claim 1 or 2, characterized in that: The substrate rotating portion has a dam portion that surrounds the end of the substrate when holding the substrate. The control unit releases ozone water onto the substrate held by the substrate rotation unit, causing the ozone water to overflow from the embankment unit.

5. The substrate processing apparatus as described in claim 1 or 2, characterized in that: The ozone water release unit simultaneously releases ozone water onto the entire substrate.

6. The substrate processing apparatus as described in claim 1 or 2, characterized in that: It also includes a heater for heating the ozone water that is about to be released onto the substrate.

7. The substrate processing apparatus as described in claim 1 or 2, characterized in that: It also includes a heating mechanism for heating the substrate held by the substrate rotating part.

8. The substrate processing apparatus as described in claim 7, characterized in that: The heating mechanism can move up and down to approach or contact the lower surface of the substrate.

9. The substrate processing apparatus as described in claim 1 or 2, characterized in that, Also includes: The housing isolates the processing space, which includes the substrate rotating section and the ozone water releasing section, from the external space; and The gas inlet section for introducing gas into the processing space, The control unit controls the gas inlet to make the processing space a pressure higher than atmospheric pressure.

10. The substrate processing apparatus as described in claim 9, characterized in that: Before releasing ozone water onto the substrate held by the substrate rotation unit, the control unit makes the processing space a pressure higher than atmospheric pressure.

11. A substrate processing method, characterized in that, include: The step of releasing ozone water onto the substrate from an ozone water release section having a length exceeding the radius of the substrate; A step of reducing the release flow rate of ozone water released onto the substrate after the step of releasing ozone water onto the substrate; and After the step of reducing the release flow rate of ozone water released to the substrate, the step of increasing the release flow rate of ozone water released to the substrate... The substrate is rotated at least when the release flow rate of ozone water released onto the substrate is reduced.

12. The substrate processing method as described in claim 11, characterized in that, include: The step of releasing ozone water onto the substrate from an ozone water release section having a length exceeding the radius of the substrate; After the step of releasing ozone water to the substrate, the step of reducing the release flow rate of ozone water to the substrate to zero. and After the step of making the release flow rate of the ozone water released to the substrate zero, the step of increasing the release flow rate of the ozone water released to the substrate. The substrate is rotated at least when the release flow rate of ozone water released onto the substrate is reduced to zero.

13. The substrate processing method as described in claim 11 or 12, characterized in that, include: The step of releasing ozone water onto the substrate held by the substrate rotating part that holds and rotates the substrate; After the step of releasing ozone water onto the substrate, the release flow rate of ozone water onto the substrate is reduced to zero, and the substrate is rotated. and After the step of rotating the substrate, the step of stopping the rotation of the substrate and releasing ozone water onto the substrate.

14. The substrate processing method as described in claim 11 or 12, characterized in that: It also includes a step of making the processing space for the substrate at a pressure higher than atmospheric pressure before the step of releasing ozone water onto the substrate.

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