Electronic device, method for manufacturing electronic device and vapor deposition mask set

Abstract

The present invention relates to an electronic device, a method for manufacturing an electronic device, and a vapor deposition mask set. The method for manufacturing an electronic device comprises the following steps: a preparation step of preparing a laminated body, the laminated body comprising a substrate having a first surface and a second surface located on the opposite side of the first surface, two or more first electrodes located on the first surface of the substrate, and an organic layer on the first electrode; a second electrode forming step of forming a second electrode on the organic layer in a manner that the second electrode overlaps the two or more first electrodes when viewed along the normal direction of the first surface of the substrate; and a removal step of locally removing a region of the second electrode located between the first electrodes when viewed from above.

Description

Technical Field

[0001] Embodiments of the present invention relate to an electronic device, a method for manufacturing the electronic device, and a vapor deposition mask set. Background Art

[0002] The display device used in portable devices such as smartphones and tablet computers is preferably high-definition, for example, the pixel density is preferably 400 ppi or more. In addition, in portable devices, the demand for ultra-high definition (UHD) is also increasing. In this case, the pixel density of the display device is preferably 800 ppi or more.

[0003] Among display devices, organic EL display devices have attracted attention due to their good responsiveness, low power consumption and high contrast. As a method for forming pixels of an organic EL display device, a method of forming pixels or electrodes in a desired pattern using a vapor deposition mask is known, wherein the vapor deposition mask is formed with through holes arranged in a desired pattern. For example, first, a substrate having a first electrode formed in a pattern corresponding to the pixel is prepared. Then, an organic material is attached to the first electrode through the through holes of the vapor deposition mask, and a light-emitting layer is formed on the first electrode. Then, a conductive material is attached to the light-emitting layer through the through holes of the vapor deposition mask, and a second electrode is formed on the light-emitting layer.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Laid-Open No. 9-115672 Summary of the invention

[0007] Problems to be solved by the invention

[0008] As the type of the second electrode in the organic EL display device, there are a type in which the second electrode is spread over the entire area of ​​the substrate and a type in which the second electrode is formed so as to have an area on the substrate where the second electrode does not exist. In the latter case, a method for appropriately controlling the shape of the second electrode when viewed from above is required.

[0009] Means for solving problems

[0010] A method for manufacturing an electronic device according to one embodiment of the present invention comprises the following steps: a preparation step of preparing a laminate comprising a substrate having a first surface and a second surface located on the opposite side of the first surface, two or more first electrodes located on the first surface of the substrate, and an organic layer on the first electrode; a second electrode forming step of forming a second electrode on the organic layer in a manner overlapping on the two or more first electrodes when viewed along a normal direction of the first surface of the substrate; and a removal step of locally removing an area of ​​the second electrode that does not overlap with the first electrode when viewed from above.

[0011] Effects of the Invention

[0012] According to the present invention, the shape of the second electrode in plan view can be appropriately controlled. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 This is a cross-sectional view showing an example of an electronic device according to an embodiment of the present invention.

[0014] Figure 2 Yes Figure 1 An enlarged cross-sectional view of an electronic device is shown.

[0015] Figure 3 Yes Figure 1 An enlarged top view of the electronic device is shown.

[0016] Figure 4A Yes Figure 2 The electronic device is further enlarged to show a cross-sectional view.

[0017] Figure 4B Yes Figure 4A FIG. 1 is an enlarged cross-sectional view of the second electrode.

[0018] Figure 4C It is a diagram for explaining a method of calculating the average value of the thickness of the second electrode.

[0019] Figure 4D It is a top view showing an example of the second electrode.

[0020] Figure 5 This is a cross-sectional view showing an example of a substrate in a state where a first electrode is formed.

[0021] Figure 6 This is a plan view showing an example of a substrate in a state where a first electrode is formed.

[0022] Figure 7 This is a cross-sectional view showing an example of a substrate in a state where a first electrode and an organic layer are formed.

[0023] Figure 8 It is a plan view showing an example of a substrate in a state where a first electrode and an organic layer are formed.

[0024] Fig. 9 This is a cross-sectional view showing an example of a process of forming the first organic layer.

[0025] Fig.10 This is a cross-sectional view showing an example of a process of forming the second organic layer.

[0026] Fig.11 This is a cross-sectional view showing an example of a process of forming the second organic layer.

[0027] Fig.12 It is a cross-sectional view showing an example of a process of forming the second electrode.

[0028] Fig.13 It is a plan view showing an example of a process of forming the second electrode.

[0029] Fig.14 This is a cross-sectional view showing an example of a step of partially removing the second electrode.

[0030] Fig.15 This is a diagram showing an example of a process of irradiating the second electrode with laser light.

[0031] Fig.16 This is a diagram showing an example of laser light including pulses.

[0032] Fig.17 This is a cross-sectional view showing an example of an electronic device according to an embodiment of the present invention.

[0033] Fig.18A Yes Fig.17 Elements of the electronic device are further enlarged to show a cross-sectional view.

[0034] Fig.18B It is shown Fig.17 A cross-sectional view of an example of an element of an electronic device.

[0035] Fig.19 This is a cross-sectional view showing an example of a substrate in a state where an insulating layer and a first electrode are formed.

[0036] Fig. 20 It is a plan view showing an example of a substrate in a state where an insulating layer and a first electrode are formed.

[0037] Fig.21 This is a cross-sectional view showing an example of a substrate in a state where an insulating layer, a first electrode, and an organic layer are formed.

[0038] Fig. 22 It is a cross-sectional view showing an example of a process of forming the second electrode.

[0039] Fig.23 This is a cross-sectional view showing an example of a step of partially removing the second electrode.

[0040] Fig.24A This is a cross-sectional view showing an example of an electronic device according to an embodiment of the present invention.

[0041] Fig. 24B This is a cross-sectional view showing an example of an electronic device according to an embodiment of the present invention.

[0042] Fig.25This is a cross-sectional view showing an example of an electronic device according to an embodiment of the present invention.

[0043] Fig.26 This is a cross-sectional view showing an example of a substrate in a state where an insulating layer and a first electrode are formed.

[0044] Fig. 27 It is a cross-sectional view showing an example of a process of forming the second electrode.

[0045] Fig.28 This is a cross-sectional view showing an example of a step of partially removing the second electrode.

[0046] Fig.29 It is a top view showing an example of the first vapor deposition mask.

[0047] Fig.30 It is a top view showing an example of the second vapor deposition mask.

[0048] Fig.31 It is a top view showing an example of the third vapor deposition mask.

[0049] Fig.32 It is a top view showing an example of a mask laminate.

[0050] Fig.33 is shown by using Figures 29 to 31 A top view of an organic layer formed by using a vapor deposition mask.

[0051] Fig.34 It is shown in Fig.33 A top view of an example of a second electrode formed on an organic layer.

[0052] Fig.35 It is a plan view showing an example of a second electrode opening formed in the second electrode.

[0053] Fig.36 Observe along the XXXVI-XXXVI line Fig.35 A cross-sectional view of an electronic device.

[0054] Fig.37 This is a plan view showing an example of an electronic device according to an embodiment of the present invention.

[0055] Fig.38 Yes Fig.37 FIG. 1 is a top view showing an enlarged second display area of ​​the electronic device.

[0056] Fig.39 This is a plan view showing an example of the first display area.

[0057] Fig.40 This is a plan view showing an example of the second display area.

[0058] Fig.41 This is a plan view showing an example of the organic layer in the second display region. DETAILED DESCRIPTION

[0059] In the present specification and the drawings, unless otherwise specified, terms such as “substrate”, “base material”, “plate”, “sheet” or “film” indicating a material serving as a basis for a certain structure are not distinguished from each other merely based on differences in name.

[0060] In this specification and the drawings, unless otherwise specified, terms such as "parallel" and "orthogonal" or values ​​of lengths and angles that limit shapes, geometric conditions and their degrees are not limited to strict meanings, but are interpreted to include a range of degrees that can be expected to have the same function.

[0061] In this specification and the drawings, unless otherwise specified, when a certain structure such as a certain component or a certain region is “on” or “below”, “on the upper side” or “lower side”, or “above” or “below” other components or other regions or other structures, this includes the case where the certain structure is in direct contact with the other structure. In addition, this also includes the case where another structure is included between the certain structure and the other structure, that is, the case of indirect contact. Unless otherwise specified, the up-down direction may be reversed in the phrases such as “on”, “upper side”, “above”, or “below”, “lower side”, or “below”.

[0062] In this specification and the drawings, unless otherwise specified, the same or similar symbols are used for the same parts or parts having the same functions, and their repeated descriptions are sometimes omitted. For the sake of convenience, the dimensional ratio of the drawings is sometimes different from the actual ratio, and sometimes a part of the structure is omitted from the drawings.

[0063] In this specification and the drawings, unless otherwise specified, one embodiment of the present specification can be combined with other embodiments within the scope that no contradiction occurs. Other embodiments can also be combined with each other within the scope that no contradiction occurs.

[0064] In this specification and the drawings, unless otherwise specified, when a plurality of steps are disclosed in a method such as a manufacturing method, other undisclosed steps may be implemented between the disclosed steps. The order of the disclosed steps is arbitrary within the range that no contradiction occurs.

[0065] In this specification and the drawings, unless otherwise specified, a numerical range represented by the symbol "to" includes the numerical values ​​placed before and after the symbol "to". For example, the numerical range defined by the expression "34 to 38 mass %" is the same as the numerical range defined by the expression "34 mass % or more and 38 mass % or less".

[0066] Hereinafter, one embodiment of the present invention will be described in detail with reference to the accompanying drawings. It should be noted that the embodiment described below is an example of the embodiment of the present invention, and the present invention is not limited to these embodiments.

[0067] A first aspect of the present invention relates to a method for manufacturing an electronic device, comprising the following steps:

[0068] A preparation step of preparing a laminate including a substrate having a first surface and a second surface located on the opposite side of the first surface, two or more first electrodes located on the first surface of the substrate, and an organic layer on the first electrode;

[0069] a second electrode forming step of forming a second electrode on the organic layer so as to overlap with two or more first electrodes when viewed along a normal direction of the first surface of the substrate; and

[0070] The removing step is to locally remove a region of the second electrode that does not overlap with the first electrode in a plan view.

[0071] In a second aspect of the present invention, in the method for manufacturing an electronic device according to the first aspect, the removing step may locally remove a region of the second electrode located between the first electrodes in a plan view.

[0072] In a third aspect of the present invention, in the method for manufacturing an electronic device according to the first aspect or the second aspect, the removing step may include an irradiation step of irradiating the second electrode with laser light to form a second electrode opening.

[0073] According to a fourth aspect of the present invention, in the method for manufacturing an electronic device according to the third aspect, the irradiation step includes a step of irradiating the second electrode with a laser beam through a through hole of a laser mask to form a second electrode opening.

[0074] In a fifth aspect of the present invention, in the method for manufacturing an electronic device according to the third aspect or the fourth aspect, the second electrode may include a side surface facing the opening of the second electrode.

[0075] The height of the side surface of the second electrode may be greater than the thickness of a region of the second electrode overlapping with the first electrode in a plan view.

[0076] In a sixth aspect of the present invention, in the method for manufacturing an electronic device of the fifth aspect, the height of the side surface of the second electrode may be 1.1 times or more the thickness of a region of the second electrode overlapping with the first electrode in a plan view.

[0077] In a seventh aspect of the present invention, in the method for manufacturing an electronic device according to any one of the third to sixth aspects, the manufacturing method may include a step of forming a protective layer that overlaps with the second electrode and the second electrode opening in a plan view.

[0078] In an eighth aspect of the present invention, in the method for manufacturing each electronic device of the third to seventh aspects, the irradiation step may include a step of forming an organic layer opening by irradiating a region of the organic layer overlapping with the second electrode opening when viewed from above with laser light.

[0079] In a ninth aspect of the present invention, in the method for manufacturing an electronic device according to the eighth aspect, a width of a side surface of the organic layer facing the opening of the organic layer may be 2.0 μm or less.

[0080] In a tenth aspect of the present invention, in the method for manufacturing an electronic device according to any one of the first to ninth aspects, the organic layer of the laminate may include a first organic layer and a second organic layer that overlap each other at a position that does not overlap the first electrode when viewed from above.

[0081] The removing step may include a step of at least partially removing the first organic layer and the second organic layer that overlap each other.

[0082] In the 11th embodiment of the present invention, in the manufacturing method of each electronic device of the above-mentioned 1st embodiment to the above-mentioned 7th embodiment, the above-mentioned laminate may include an organic layer opening located between two adjacent organic layers when viewed from above, the above-mentioned second electrode forming step may form the above-mentioned second electrode in a manner that the above-mentioned second electrode overlaps with the above-mentioned organic layer and the above-mentioned organic layer opening when viewed from above, and the above-mentioned removal step may locally remove the area of ​​the above-mentioned second electrode that overlaps with the above-mentioned organic layer opening when viewed from above.

[0083] In a twelfth aspect of the present invention, in the method for manufacturing an electronic device according to any one of the first to eleventh aspects, the laminate may include an insulating layer located between the first electrodes in a plan view.

[0084] In a 13th aspect of the present invention, in the method for manufacturing an electronic device according to the 12th aspect, the removing step may include a step of partially removing the insulating layer.

[0085] In a fourteenth aspect of the present invention, in the method for manufacturing an electronic device according to any one of the first to thirteenth aspects, the preparation step may include a step of vapor-depositing a material for the organic layer onto the first electrode through a through hole of a vapor deposition mask.

[0086] A fifteenth aspect of the present invention relates to an electronic device comprising:

[0087] A substrate having a first surface and a second surface located on the opposite side of the first surface;

[0088] Two or more first electrodes located on the first surface of the substrate;

[0089] an organic layer on the first electrode; and

[0090] a second electrode located on the organic layer and extending so as to overlap two or more of the first electrodes in a plan view;

[0091] The second electrode includes a second electrode opening that does not overlap with the first electrode in a plan view, and a side surface facing the second electrode opening.

[0092] The height of the side surface of the second electrode is larger than an average value of thickness of a region of the second electrode overlapping with the first electrode in a plan view.

[0093] In a sixteenth aspect of the present invention, in the electronic device of the fifteenth aspect, a height of the side surface of the second electrode may be 1.1 times or more an average value of a thickness of a region overlapping with the first electrode in a plan view.

[0094] In a seventeenth aspect of the present invention, in each of the electronic devices according to the fifteenth aspect or the sixteenth aspect, the second electrode opening may be surrounded by the second electrode in a plan view.

[0095] In an eighteenth aspect of the present invention, in each of the electronic devices of the fifteenth to seventeenth aspects, the upper end of the side surface of the second electrode may have an outline surrounding the opening of the second electrode in a plan view.

[0096] In the 19th aspect of the present invention, in the electronic device of the above-mentioned 18th aspect, the above-mentioned second electrode may include a base having an outline of the outline of the upper end of the above-mentioned side surface surrounding the above-mentioned second electrode when viewed from above, and the thickness of the above-mentioned second electrode at the above-mentioned base may be 1.05 times the average value of the thickness of the area overlapping with the above-mentioned first electrode when viewed from above.

[0097] In a twentieth aspect of the present invention, in each of the electronic devices of the fifteenth to nineteenth aspects, the electronic device may include a protective layer overlapping the second electrode and the second electrode opening in a plan view.

[0098] In the 21st aspect of the present invention, in the electronic device of the 20th aspect, the surface of the protective layer overlapping with the second electrode opening can be located between the surface of the second electrode overlapping with the first electrode and the first surface in the thickness direction of the substrate.

[0099] In the 22nd aspect of the present invention, in the electronic device of the 20th aspect, the surface of the second electrode overlapping the first electrode can be located between the surface of the protective layer overlapping the second electrode opening and the first surface in the thickness direction of the substrate.

[0100] In a 23rd aspect of the present invention, in each of the electronic devices according to the 15th to 22nd aspects, the organic layer may include an organic layer opening overlapping with the second electrode opening in a plan view.

[0101] In a 24th aspect of the present invention, in the electronic device of the 23rd aspect, the organic layer may include a side surface facing the opening of the organic layer,

[0102] An upper end of the side surface of the organic layer may be in contact with a lower end of the side surface of the second electrode.

[0103] In a 25th aspect of the present invention, in the electronic device of the 24th aspect, the width of the side surface of the organic layer may be 2.0 μm or less.

[0104] In a 26th aspect of the present invention, in each of the electronic devices of the 15th to 22nd aspects, the organic layer may include an organic layer opening overlapping a part of the second electrode and the second electrode opening in a plan view.

[0105] In a 27th aspect of the present invention, in the electronic device of the 26th aspect, the organic layer may include a side surface facing the opening of the organic layer, and the second electrode may overlap the side surface of the organic layer in a plan view.

[0106] In the 28th embodiment of the present invention, in each electronic device of the above-mentioned 15th embodiment to the above-mentioned 27th embodiment, there may be an insulating layer, which may include a first opening of the insulating layer overlapping with the above-mentioned first electrode when viewed from above, and is located between the first surface of the above-mentioned substrate and the above-mentioned organic layer in the normal direction of the above-mentioned first surface of the above-mentioned substrate.

[0107] In a 29th aspect of the present invention, in the electronic device of the 28th aspect, the insulating layer may include a second opening of the insulating layer which is located between the first electrodes and overlaps with the second electrode opening in a plan view.

[0108] A 30th aspect of the present invention relates to a vapor deposition mask set,

[0109] It has two or more vapor deposition masks.

[0110] The above-mentioned vapor deposition mask has a shielding area and a through hole,

[0111] The mask laminate formed by stacking two or more of the vapor deposition masks includes an overlapping shielding region where the shielding regions of the respective vapor deposition masks overlap each other.

[0112] Hereinafter, one embodiment of the present invention will be described in detail with reference to the accompanying drawings. It should be noted that the embodiment described below is an example of the embodiment of the present invention, and the present invention is not limited to these embodiments.

[0113] Figure 1 1 is a cross-sectional view showing an example of an electronic device 10. The electronic device 10 may include: a substrate 15 including a first surface 16 and a second surface 17; and a plurality of elements 20 arranged along the in-plane direction of the first surface 16 of the substrate 15. Although not shown in the figure, the elements 20 may also be arranged on the first surface 16 of the substrate 15. Figure 1 The element 20 may include: two or more first electrodes 30 located on the first surface 16; two or more organic layers 40 located on the first electrode 30; and a second electrode 50 located on the organic layer 40. The first electrode 30 may be an anode and the second electrode 50 may be a cathode. Alternatively, the first electrode 30 may be a cathode and the second electrode 50 may be an anode.

[0114] The electronic device 10 may be an active matrix type. For example, although not shown, the electronic device 10 may include switches electrically connected to the plurality of elements 20. The switches are, for example, transistors. The switches can control the conduction / interruption of the voltage applied to the element 20 or the current flowing through the element 20.

[0115] The substrate 15 may be a plate-shaped member having insulating properties. The substrate 15 preferably has transparency to allow light to pass therethrough. The substrate 15 is, for example, glass. Although not shown, a wiring layer may be located between the substrate 15 and the element 20. The wiring layer can transmit electrical signals, power, etc. to the element 20.

[0116] The element 20 is configured to achieve a certain function by applying a voltage between the first electrode 30 and the second electrode 50 or by flowing a current between the first electrode 30 and the second electrode 50 .

[0117] The first electrode 30 includes a conductive material. For example, the first electrode 30 includes a metal, a conductive metal oxide, or other inorganic material. The first electrode 30 may include a transparent and conductive metal oxide such as indium tin oxide.

[0118] The organic layer 40 includes an organic material. If the organic layer 40 is energized, the organic layer 40 can perform a certain function. Energizing means applying a voltage to the organic layer 40 or flowing a current through the organic layer 40. As the organic layer 40, a light-emitting layer that emits light by energizing, a layer that changes the transmittance or refractive index of light by energizing, etc. can be used. The organic layer 40 can include an organic semiconductor material. In the case where the organic layer 40 is a light-emitting layer, when a current flows through the organic layer 40 by applying a voltage between the first electrode 30 and the second electrode 50, light is emitted from the organic layer 40, and the light is taken out to the outside from the second electrode 50 side or the first electrode 30 side.

[0119] When the organic layer 40 includes a light-emitting layer that emits light when electricity is supplied, the organic layer 40 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like.

[0120] For example, when the first electrode 30 is an anode, the organic layer 40 may have a hole injection transport layer between the light-emitting layer and the first electrode 30. The hole injection transport layer may be a hole injection layer having a hole injection function, a hole transport layer having a hole transport function, or both a hole injection function and a hole transport function. In addition, the hole injection transport layer may be a layer formed by laminating a hole injection layer and a hole transport layer.

[0121] When the second electrode 50 is a cathode, the organic layer 40 may have an electron injection transport layer between the light-emitting layer and the second electrode 50. The electron injection transport layer may be an electron injection layer having an electron injection function, an electron transport layer having an electron transport function, or both an electron injection function and an electron transport function. In addition, the electron injection transport layer may be a layer formed by laminating an electron injection layer and an electron transport layer.

[0122] The light-emitting layer comprises a light-emitting material and may comprise an additive for improving leveling.

[0123] As the light-emitting material, a known material can be used, and for example, a light-emitting material such as a pigment material, a metal complex material, or a polymer material can be used.

[0124] As pigment materials, for example, cyclopentadiene derivatives, tetraphenylbutadiene derivatives, triphenylamine derivatives, oxadiazole derivatives, pyrazoloquinoline derivatives, distyrylbenzene derivatives, distyrylarylene derivatives, silole derivatives, thiophene ring compounds, pyridine ring compounds, perirone derivatives, perylene derivatives, oligothiophene derivatives, oxadiazole dimers, pyrazoline dimers, etc. can be used.

[0125] As metal complex materials, metal complexes such as hydroxyquinoline aluminum complexes, benzohydroxyquinoline beryllium complexes, benzoxazole zinc complexes, benzothiazole zinc complexes, azomethyl zinc complexes, porphyrin zinc complexes, europium complexes, etc. can be used, wherein the central metal has Al, Zn, Be or rare earth metals such as Tb, Eu, Dy, and the ligands have oxadiazole, thiadiazole, phenylpyridine, phenylbenzimidazole, quinoline structures, etc.

[0126] As the polymer material, for example, polyparaphenylene vinylene derivatives, polythiophene derivatives, polyparaphenylene derivatives, polysilane derivatives, polyacetylene derivatives, polyvinylcarbazole derivatives, polyfluorene derivatives, polyquinoxaline derivatives, and copolymers thereof can be used.

[0127] For the purpose of improving luminous efficiency or changing the wavelength of emitted light, the luminescent layer may include a dopant. As a dopant, for example, perylene derivatives, coumarin derivatives, rubrene derivatives, quinacridone derivatives, squarylium salt derivatives, porphyrin derivatives, styryl pigments, tetracene derivatives, pyrazoline derivatives, decacyclic ene, phenoxazine ketone, quinoxaline derivatives, carbazole derivatives, fluorene derivatives, etc. can be cited. In addition, as a dopant, an organic metal complex having a heavy metal ion such as platinum or iridium in the center and showing phosphorescence can also be used. One dopant can be used alone, or two or more can be used.

[0128] In addition, as the light-emitting material and the dopant, for example, materials described in

[0094] to

[0099] of JP-A-2010-272891 and

[0053] to

[0057] of WO-2012 / 132126 may be used.

[0129] The thickness of the light-emitting layer is not particularly limited as long as it can provide a recombination site for electrons and holes to exhibit a light-emitting function, and may be, for example, 1 nm or more and 500 nm or less.

[0130] As hole injection transport materials for the hole injection transport layer, known materials can be used. For example, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styryl anthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, silazane derivatives, polythiophene derivatives, polyaniline derivatives, polypyrrole derivatives, phenylamine derivatives, anthracene derivatives, carbazole derivatives, fluorene derivatives, distyrylbenzene derivatives, polyphenylene vinyl derivatives, porphyrin derivatives, styrylamine derivatives, etc. can be used. In addition, spiro compounds, phthalocyanine compounds, metal oxides, etc. can be exemplified. In addition, the compounds described in

[0106] of, for example, JP-A-2011-119681, International Publication No. 2012 / 018082, JP-A-2012-069963, and International Publication No. 2012 / 132126 may be appropriately selected and used.

[0131] It should be noted that when the hole injection and transport layer is a layer formed by laminating a hole injection layer and a hole transport layer, the hole injection layer may contain additive A, the hole transport layer may contain additive A, or the hole injection layer and the hole transport layer may contain additive A. Additive A may be a low molecular compound or a high molecular compound. Specifically, fluorine compounds, ester compounds, hydrocarbon compounds, etc. may be used.

[0132] As the electron injection transport material for the electron injection transport layer, a known material can be used. For example, alkali metals, alkali metal alloys, alkali metal halides, alkaline earth metals, alkaline earth metal halides, alkaline earth metal oxides, alkali metal organic complexes, magnesium halides or oxides, aluminum oxide, etc. can be used. In addition, as the electron injection transport material, for example, bathocuproin, bathophenanthroline, phenanthroline derivatives, triazole derivatives, oxadiazole derivatives, pyridine derivatives, nitro-substituted fluorene derivatives, anthraquinone dimethane derivatives, diphenylquinone derivatives, thiopyran dioxide derivatives, naphthalene or perylene and other aromatic ring tetracarboxylic anhydrides, carbodiimides, fluorenyl methane derivatives, anthraquinone dimethane derivatives, anthrone derivatives, quinoxaline derivatives, hydroxyquinoline complexes and other metal complexes, phthalocyanine compounds, distyryl pyrazine derivatives, etc. can be used.

[0133] In addition, a metal doping layer in which an alkali metal or alkaline earth metal is doped in an organic material having electron transport properties can also be formed and used as an electron injection transport layer. As an organic material having electron transport properties, metal complexes such as bathocuproin, bathophenanthroline, phenanthroline derivatives, triazole derivatives, oxadiazole derivatives, pyridine derivatives, tris (8-hydroxyquinoline complex) aluminum (Alq3) and their polymer derivatives can be used. In addition, as a metal to be doped, Li, Cs, Ba, Sr, etc. can be used.

[0134] The second electrode 50 includes a conductive material such as a metal. The second electrode 50 is formed on the organic layer 40 by a vapor deposition method using a vapor deposition mask described later. Examples of materials constituting the second electrode 50 include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, chromium, carbon, and alloys thereof.

[0135] When the electronic device 10 is an organic EL display device, the element 20 is a pixel, and the organic layer 40 includes a light-emitting layer.

[0136] like Figure 1 As shown, a plurality of elements 20 corresponding to a plurality of electronic devices 10 may be provided on one substrate 15. When the electronic device 10 is a display device such as an organic EL display device, one electronic device 10 corresponds to one screen.

[0137] Figure 2 is a cross-sectional view showing an electronic device 10 in an enlarged manner. Figure 3 It is a plan view showing the electronic device 10 in an enlarged manner. Figure 2 Equivalent to Figure 3 The electronic device 10 is shown in a cross-sectional view along line II-II.

[0138] like Figure 2 and Figure 3 As shown, the organic layer 40 may be the first organic layer 40A, the second organic layer 40B, or the third organic layer 40C. The first organic layer 40A, the second organic layer 40B, and the third organic layer 40C are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer. In the following description, when describing the common structure of the first organic layer 40A, the second organic layer 40B, and the third organic layer 40C in the structure of the organic layer, the term and symbol "organic layer 40" are used.

[0139] like Figure 2As shown, the organic layer 40 may be located not only in a region overlapping with the first electrode 30 when viewed along the normal direction of the first surface 16 of the substrate 15, but also in a region not overlapping with the first electrode 30. Similarly, the second electrode 50 may be located not only in a region overlapping with the first electrode 30 when viewed along the normal direction of the first surface 16 of the substrate 15, but also in a region not overlapping with the first electrode 30. It should be noted that in the following description, the situation where two components overlap when viewed along the normal direction of the surface of a plate-like component such as the substrate 15 is sometimes simply expressed as "overlapping". In addition, the situation where the surface of a plate-like component such as the substrate 15 is viewed along the normal direction is sometimes simply expressed as "looking down".

[0140] Figure 3 In FIG. 5 , the organic layer 40 covered by the second electrode 50 in a plan view and the first electrode 30 covered by the organic layer 40 in a plan view are indicated by dotted lines, respectively. Figure 3 As shown, the plurality of first electrodes 30 and the organic layer 40 may be arranged along the third direction D3 and the fourth direction D4 intersecting the third direction D3. The fourth direction D4 may be orthogonal to the third direction D3. The third direction D3 may be a direction that is 45° with respect to the first direction D1. In addition, the fourth direction D4 may be a direction that is 45° with respect to the second direction D2. The fourth direction D4 may be orthogonal to the third direction D3.

[0141] The first direction D1 and the second direction D2 may be directions in which the outer edge of the substrate 15 extends. The second direction D2 may be orthogonal to the first direction D1.

[0142] like Figure 3 As shown, the second electrode 50 may be developed in a manner overlapping on more than two first electrodes 30. In this case, the second electrode 50 may function as a common electrode for electrifying the plurality of organic layers 40. In addition, the second electrode 50 may include a second electrode opening 51 that does not overlap with the first electrode 30 when viewed from above. The second electrode opening 51 may be surrounded by the second electrode 50 when viewed from above. The second electrode opening 51 may be located between two first electrodes 30 that are adjacent when viewed from above. For example, the second electrode opening 51 may be located between two first electrodes 30 that are adjacent in the first direction D1 when viewed from above. In addition, the second electrode opening 51 may be located between two first electrodes 30 that are adjacent in the second direction D2 when viewed from above.

[0143] Since the second electrode 50 includes the second electrode opening 51, light can more easily pass through the electronic device 10 than when the second electrode 50 is extended over the entire area of ​​the first surface 16. Thus, the transmittance of the entire electronic device 10 can be improved.

[0144] like Figure 2 and Figure 3As shown, the organic layer 40 may include an organic layer opening 41 that overlaps with the second electrode opening 51 when viewed from above. A portion of the light passes through the organic layer opening 41, thereby further improving the transmittance of the entire electronic device 10. Similar to the second electrode opening 51, the organic layer opening 41 may be located between two first electrodes 30 adjacent to each other in the first direction D1 when viewed from above. In addition, similar to the second electrode opening 51, the organic layer opening 41 may be located between two first electrodes 30 adjacent to each other in the second direction D2 when viewed from above.

[0145] Figure 4A Yes Figure 2 The electronic device 10 is further enlarged and shown in a cross-sectional view. The second electrode 50 includes a side surface 52 facing the second electrode opening 51. Similarly, the organic layer 40 includes a side surface 42 facing the organic layer opening 41. Figure 4A As shown, the upper end 43 of the side surface 42 of the organic layer 40 may contact the lower end 54 of the side surface 52 of the second electrode 50. Such a relationship between the side surfaces 42 and 52 may be achieved when the organic layer opening 41 and the second electrode opening 51 are formed by laser processing.

[0146] Figure 4B Yes Figure 4A The cross-sectional view of the second electrode 50 is enlarged. Figure 4A and Figure 4B As shown in FIG. 1 , the upper end 53 of the side surface 52 of the second electrode 50 may be raised higher than the surrounding second electrode 50. Such a raised portion may be produced by melting the second electrode 50 during laser processing. By raising the upper end 53 of the side surface 52 of the second electrode 50, the height of the side surface 52 of the second electrode 50 increases, thereby reducing the resistance of the second electrode 50.

[0147] Figure 4A and Figure 4B In FIG. 1 , symbol t1 represents the height of the side surface 52 of the second electrode 50. In addition, symbol t2 represents the average value of the thickness of the region of the second electrode 50 that overlaps with the first electrode 30 when viewed from above. The height t1 is the distance between the upper end 53 and the lower end 54 of the side surface 52 in the normal direction of the first surface 16 of the substrate 15. The height t1 of the side surface 52 and the thickness of the second electrode 50 are calculated based on the image of the cross section of the electronic device 10. The cross-sectional image is obtained by observing the cross section of the electronic device 10 using a scanning electron microscope.

[0148] Reference Figure 4C , a method for calculating the average value t2 of the thickness of the second electrode 50 is described. The average value t2 is calculated by averaging the thickness t21, the thickness t22, and the thickness t23. The thickness t21 is the thickness of the second electrode 50 overlapping the center position of the first electrode 30 in the in-plane direction of the first surface 16. Figure 4CIn FIG. 1 , a straight line passing through the center position of the first electrode 30 and extending in the thickness direction of the substrate 15 is represented by the symbol Lc. The thickness t22 and the thickness t23 are the thicknesses of the second electrode 50 at the intermediate position between the end 30a of the first electrode 30 and the straight line Lc in the in-plane direction of the first surface 16.

[0149] The height t1 of the side surface 52 may be greater than the average value t2 of the thickness of the second electrode 50. That is, t1 / t2 may be greater than 1.0. The range of t1 / t2 may be determined by the first group consisting of 1.1, 1.2, 1.3 and 1.4 and / or the second group consisting of 1.5, 1.6, 1.8 and 2.0. The lower limit of the range of t1 / t2 may be determined by any one of the values ​​included in the above-mentioned first group. For example, the lower limit of the range of t1 / t2 may be greater than 1.1, greater than 1.2, greater than 1.3, or greater than 1.4. In addition, the upper limit of the range of t1 / t2 may be determined by any one of the values ​​included in the above-mentioned second group. For example, the upper limit of the range of t1 / t2 may be less than 1.5, less than 1.6, less than 1.8, or less than 2.0.

[0150] The range of t1 / t2 can be determined by a combination of any one of the values ​​included in the above-mentioned first group and any one of the values ​​included in the above-mentioned second group, for example, it can be greater than 1.1 and less than 2.0, it can be greater than 1.2 and less than 1.8, it can be greater than 1.3 and less than 1.6, or it can be greater than 1.4 and less than 1.5. In addition, the range of t1 / t2 can be determined by a combination of any two of the values ​​included in the above-mentioned first group, for example, it can be greater than 1.1 and less than 1.4, it can be greater than 1.1 and less than 1.3, it can be greater than 1.2 and less than 1.4, or it can be greater than 1.2 and less than 1.3. In addition, the range of t1 / t2 can be determined by a combination of any two of the values ​​included in the above-mentioned second group, for example, it can be greater than 1.5 and less than 2.0, it can be greater than 1.5 and less than 1.8, it can be greater than 1.6 and less than 2.0, or it can be greater than 1.6 and less than 1.8.

[0151] When the organic layer opening 41 is formed in the organic layer 40 by laser processing, the angle formed by the side surface 42 facing the organic layer opening 41 with respect to the first surface 16 of the substrate 15 can be adjusted by adjusting the irradiation direction of light. Therefore, for example, the organic layer opening 41 can be formed in such a way that the side surface 42 rises steeply. In this case, the width u1 of the side surface 42 of the organic layer 40 is smaller than the width of the side surface of the organic layer formed by the vapor deposition method. Since the side surface 42 of the organic layer 40 rises steeply, the deviation of the effective area of ​​each organic layer 40 is reduced. Therefore, the deviation of the characteristics of each organic layer 40 is reduced. For example, in the case where the organic layer 40 is a light-emitting layer, the deviation of the luminance of the light emitted from each light-emitting layer is reduced. Therefore, it is possible to suppress the brightness distribution of the electronic device 10 from changing depending on the position in the plane of the electronic device 10. The "effective area of ​​the organic layer 40" refers to the area of ​​the portion having the thickness required for the function of the organic layer 40 and overlapping with the first electrode 30 and the second electrode 50 when viewed from above.

[0152] In the present application, the width u1 of the side surface 52 is defined as the distance in the in-plane direction of the first surface 16 from the position where the height of the side surface 52 reaches t4 to the position where the height reaches t5. t4 is 0.2×t3, and t5 is 0.8×t3. Symbol t3 represents the average value of the thickness of the region between the side surface 42 and the end 31 of the first electrode 30 in the organic layer 40 when viewed from above. Similar to the thickness of the second electrode 50, the thickness of the organic layer 40 is calculated based on the image of the cross section of the electronic device 10.

[0153] The range of the width u1 of the side surface 42 of the organic layer 40 can be determined by the first group consisting of 0.1 μm, 0.2 μm, 0.3 μm and 0.4 μm and / or the second group consisting of 0.5 μm, 1.0 μm, 1.5 μm and 2.0 μm. The lower limit of the range of the width u1 of the side surface 42 can be determined by any one of the values ​​included in the above-mentioned first group. For example, the lower limit of the range of the width u1 of the side surface 42 can be greater than 0.1 μm, greater than 0.2 μm, greater than 0.3 μm, or greater than 0.4 μm. In addition, the upper limit of the range of the width u1 of the side surface 42 can be determined by any one of the values ​​included in the above-mentioned second group. For example, the upper limit of the range of the width u1 of the side surface 42 can be less than 0.5 μm, less than 1.0 μm, less than 1.5 μm, or less than 2.0 μm.

[0154] The range of the width u1 of the side surface 42 of the organic layer 40 can be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group, for example, it can be 0.1 μm to 2.0 μm, 0.2 μm to 1.5 μm, 0.3 μm to 1.0 μm, or 0.4 μm to 0.5 μm. In addition, the range of the width u1 of the side surface 42 can be determined by a combination of any two of the values ​​included in the first group, for example, it can be 0.1 μm to 0.4 μm, 0.1 μm to 0.3 μm, 0.2 μm to 0.4 μm, or 0.2 μm to 0.3 μm. In addition, the range of the width u1 of the side 42 can be determined by a combination of any two of the values ​​included in the above-mentioned second group, for example, it can be greater than 0.5μm and less than 2.0μm, greater than 0.5μm and less than 1.5μm, greater than 1.0μm and less than 2.0μm, or greater than 1.0μm and less than 1.5μm.

[0155] When the side surface 52 of the second electrode 50 is raised, Figure 4A and Figure 4B As shown in FIG. 1 , the second electrode 50 includes a base 55 located outside the upper end 53. The thickness of the second electrode 50 decreases as it moves from the upper end 53 toward the outside. "Outside" refers to the side away from the center of the second electrode opening 51 when viewed from above. The base 55 is a position where the thickness of the second electrode 50 is sufficiently smaller than the height t1 of the side surface 52. For example, the thickness t6 of the second electrode 50 at the base 55 is 1.05 times the average value t2 of the thickness of the second electrode 50.

[0156] Figure 4D 1 is a top view showing an example of the second electrode 50. Reference numeral 51a denotes the outer edge of the second electrode opening 51 in a top view. The upper end 53 of the side surface 52 of the second electrode 50 may have a contour surrounding the second electrode opening 51 in a top view. The base 55 may have a contour surrounding the contour of the upper end 53 in a top view.

[0157] Symbol u2 represents the distance from the outer edge 51a of the second electrode opening 51 to the base 55 when viewed from above. The distance u2 may be, for example, greater than 0.05 μm, greater than 0.1 μm, or greater than 0.5 μm. The distance u2 may be, for example, less than 2.0 μm, less than 3.0 μm, or less than 5.0 μm. The range of the distance u2 may be determined by the first group consisting of 0.05 μm, 0.1 μm, and 0.5 μm and / or the second group consisting of 2.0 μm, 3.0 μm, and 5.0 μm. The range of the distance u2 may be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the distance u2 may be determined by a combination of any two of the values ​​included in the first group. The range of the distance u2 may be determined by a combination of any two of the values ​​included in the second group. For example, it can be greater than 0.05μm and less than 5.0μm, greater than 0.05μm and less than 3.0μm, greater than 0.05μm and less than 2.0μm, greater than 0.05μm and less than 0.5μm, greater than 0.05μm and less than 0.1μm, greater than 0.1μm and less than 5.0μm, greater than 0.1μm and less than 3.0μm, greater than 0.1μm and less than 2.0μm, greater than 0.1μm and less than 0.5μm, greater than 0.5μm and less than 5.0μm, greater than 0.5μm and less than 3.0μm, greater than 0.5μm and less than 2.0μm, greater than 2.0μm and less than 5.0μm, greater than 2.0μm and less than 3.0μm, or greater than 3.0μm and less than 5.0μm.

[0158] The dimensions of the components of the electronic device 10 , the distances between the components, and the like can be measured by observing an image of a cross section of the electronic device 10 using a scanning electron microscope.

[0159] The second electrode 50 may include a uniform region 56. The uniform region 56 is, for example, a region having a thickness of 1.05 times or less of the average value t2. The uniform region 56 is extended so as to surround the second electrode opening 51 when viewed from above. The uniform region 56 may be extended to the outside of the base 55. The uniform region 56 may occupy most of the second electrode 50. The occupancy rate of the uniform region 56 in the second electrode 50 may be, for example, 90% or more, 95% or more, 98% or more, or 99% or more. When most of the second electrode 50 is the uniform region 56, light easily passes through the second electrode 50. Thus, the transmittance of the electronic device 10 can be improved.

[0160] Next, an example of a method for manufacturing the electronic device 10 will be described.

[0161] First, the substrate 15 on which the first electrode 30 is formed is prepared. Figure 5 and Figure 6 1 and 2 are a cross-sectional view and a plan view showing a substrate 15 in a state where the first electrode 30 is formed. Figure 5 Equivalent to Figure 6 The first electrode 30 is formed by forming a conductive layer constituting the first electrode 30 on the substrate 15 by sputtering or the like, and then patterning the conductive layer by photolithography or the like, thereby forming the first electrode 30.

[0162] Next, an organic layer forming step of forming the organic layer 40 on the first electrode 30 is performed. Figure 7 and Figure 8 1 and 2 are a cross-sectional view and a plan view showing a substrate 15 in a state where the first electrode 30 and the organic layer 40 are formed. Figure 7 Equivalent to Figure 8 1 is a cross-sectional view of the substrate 15 along the line VII-VII shown in FIG. The organic layer 40 is formed, for example, by attaching an organic material or the like onto the substrate 15 or onto the first electrode 30 by a vapor deposition method using a vapor deposition mask having through holes corresponding to the organic layer 40, thereby forming the organic layer 40. In this way, a laminate 18 can be prepared, which includes: the substrate 15; two or more first electrodes 30 located on the first surface 16 of the substrate 15; and the organic layer 40 on the first electrode 30.

[0163] like Figure 8 As shown, the plurality of first organic layers 40A may be arranged along the third direction D3 and the fourth direction D4 intersecting the third direction D3. Similar to the first organic layer 40A, the plurality of second organic layers 40B may also be arranged along the third direction D3 and the fourth direction D4 intersecting the third direction D3. The plurality of third organic layers 40C may be arranged along the first direction D1 and the second direction D2.

[0164] Fig. 9 1 is a cross-sectional view showing an example of a process for forming the first organic layer 40A. First, a first vapor deposition mask 80A including a plurality of through holes 81 is prepared. Next, the first vapor deposition mask 80A is made to face the substrate 15 on which the first electrode 30 is formed. Next, a first vapor deposition process is performed: the material of the first organic layer 40A is vapor-deposited onto the first electrode 30 through the through holes 81 of the first vapor deposition mask 80A. Fig. 9 As shown, the first organic layer 40A may be formed not only in a region overlapping with the first electrode 30 in a plan view but also in a region not overlapping with the first electrode 30 .

[0165] Fig.101 is a cross-sectional view showing an example of a process for forming the second organic layer 40B. First, a second vapor deposition mask 80B including a plurality of through holes 81 is prepared. Next, the second vapor deposition mask 80B is placed opposite to the substrate 15 on which the first electrode 30 and the first organic layer 40A are formed. Next, a second vapor deposition process is performed: the material of the second organic layer 40B is vapor-deposited onto the first electrode 30 through the through holes 81 of the second vapor deposition mask 80B. Fig.10 As shown, the second organic layer 40B may be formed not only in a region overlapping with the first electrode 30 in a plan view but also in a region not overlapping with the first electrode 30 .

[0166] Although not shown, a third evaporation step is performed similarly to the first organic layer 40A and the second organic layer 40B: a material of the third organic layer 40C is evaporated onto the first electrode 30 through the through hole of the evaporation mask. In this way, an organic layer 40 including the first organic layer 40A, the second organic layer 40B, and the third organic layer 40C can be formed on the first electrode 30.

[0167] Fig.11 4 is a cross-sectional view showing an example of a process for forming the second organic layer 40B. Fig.11 As shown in the figure, the second evaporation step can be performed in a manner that a portion of the second organic layer 40B overlaps the first organic layer 40A. In this case, the first organic layer 40A and the second organic layer 40B include an overlapping portion 45 that partially overlaps each other at a position that does not overlap the first electrode 30. Although not shown, the first organic layer 40A and the third organic layer 40C may partially overlap each other. In addition, the second organic layer 40B and the third organic layer 40C may partially overlap each other.

[0168] Next, a second electrode forming step of forming the second electrode 50 is performed. Fig.12 and Fig.13 It is a cross-sectional view and a plan view showing an example of a process of forming the second electrode 50 . Fig.12 Equivalent to Fig.13 1 is a cross-sectional view of the substrate 15 along the line XII-XII shown in FIG. In the second electrode forming step, the second electrode 50 is formed on the organic layer 40 in such a manner that the second electrode 50 overlaps with two or more first electrodes 30 when viewed from above. For example, the second electrode 50 is formed on the entire area of ​​the first surface 16 side of the substrate 15 by a vapor deposition method.

[0169] The second electrode 50 may be formed over the entire display region of the electronic device 10. The second electrode 50 may include a layer that is continuously developed without gaps. The second electrode 50 may also be composed of a single layer that is continuously developed without gaps. The second electrode 50 may be formed by a single vapor deposition process.

[0170] Next, a removal step is performed to partially remove the region of the second electrode 50 that does not overlap with the first electrode 30 when viewed from above, thereby forming a second electrode opening 51. Fig.14 As shown, the removal step may include an irradiation step of irradiating the second electrode 50 with the laser light L1. The irradiation step may include a step of irradiating the second electrode 50 with the laser light L1 through the through hole 91 of the laser mask 90. ​​By irradiating the second electrode 50 with the laser light L1, as described above Figure 2 As shown in FIG. 1 , the second electrode opening 51 can be formed in the second electrode 50. In this way, the electronic device 10 including the second electrode 50 including the second electrode opening 51 can be obtained.

[0171] The removal step may locally remove the region of the second electrode 50 located between the first electrodes 30 in a plan view. For example, the region of the second electrode 50 located between the first electrodes 30 in a plan view may be irradiated with the laser light L1.

[0172] The irradiation step may include the following step: after forming the second electrode opening 51 in the second electrode 50, irradiating the region of the organic layer 40 overlapping with the second electrode opening 51 with the laser light L1. By irradiating the organic layer 40 with the laser light L1, as described above, Figure 2 As shown, the organic layer opening 41 overlapping with the second electrode opening 51 can be formed in the organic layer 40 .

[0173] As mentioned above Fig.11 As shown in FIG. 1 , when the first organic layer 40A and the second organic layer 40B partially overlap each other, the overlapping portion 45 may be irradiated with the laser light L1 . Thus, the overlapping portion 45 can be removed.

[0174] Fig.15 This is a diagram showing an example of the irradiation step. Fig.15 In FIG. 5 , the dotted line indicates the area where the second electrode opening 51 is to be formed. Fig.15 As shown, the spot 92 of the laser irradiated to the second electrode 50 may have a spot diameter r smaller than the size of the second electrode opening 51. In this case, the laser light source may be scanned in the in-plane direction of the first surface 16 of the substrate 15 with the laser mask 90 sandwiched between the laser light source and the second electrode 50, thereby irradiating the laser light to the area of ​​the second electrode 50 where the second electrode opening 51 is to be formed.

[0175] As the laser, for example, a YAG laser can be used. The light source for generating the YAG laser can include an oscillation medium including a crystal in which neodymium is added to yttrium, aluminum, and garnet. In this case, as a fundamental wave, a laser with a wavelength of about 1064 nm can be generated. In addition, by passing the fundamental wave through a nonlinear optical crystal, a second high-frequency wave with a wavelength of about 532 nm can be generated. In addition, by passing the fundamental wave and the second high-frequency wave through a nonlinear optical crystal, a third high-frequency wave with a wavelength of about 355 nm can be generated. The laser irradiated onto the second electrode 50 includes one, two, or three of the fundamental wave, the second high-frequency wave, and the third high-frequency wave.

[0176] The laser light irradiating the second electrode 50 may be a laser light other than the YAG laser light.

[0177] In the irradiation step, the pulses of the laser light L1 may be intermittently irradiated to the second electrode 50. That is, the laser light L1 including pulses obtained by pulse oscillation may be used instead of continuous light as the laser light L1 irradiated to the second electrode 50. Thus, it is easy to control the heat generated in the second electrode 50 by the irradiation of the laser light L1. Fig.16 This is a diagram showing an example of the laser light L1 including pulses. Fig.16 In FIG. 1 , symbol W1 represents the pulse width of laser light L1 , symbol W2 represents the period W2 of the pulse of laser light L1 , and symbol P1 represents the peak output of laser light L1 . Pulse width W1 is the half-peak width of the peak of the pulse.

[0178] In the irradiation process, the parameters such as the spot diameter r, pulse width W1, pulse period W2, peak output P1, pulse energy, etc. of the laser light L1 can be appropriately adjusted. Thus, the degree of the protrusion of the upper end 53 formed on the side surface 52 of the second electrode 50 can be adjusted. In addition, the width u1 of the side surface 42 of the organic layer 40 can be adjusted.

[0179] The range of the spot diameter r of the laser L1 can be determined by the first group consisting of 2μm, 5μm, 10μm and 15μm and / or the second group consisting of 20μm, 30μm, 40μm and 50μm. The lower limit of the range of the spot diameter r can be determined by any one of the values ​​included in the above-mentioned first group. For example, the lower limit of the range of the spot diameter r can be greater than 2μm, greater than 5μm, greater than 10μm, or greater than 15μm. In addition, the upper limit of the range of the spot diameter r can be determined by any one of the values ​​included in the above-mentioned second group. For example, the upper limit of the range of the spot diameter r can be less than 20μm, less than 30μm, less than 40μm, or less than 50μm.

[0180] The range of the spot diameter r of the laser L1 can be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group, for example, it can be 2 μm to 50 μm, 5 μm to 40 μm, 10 μm to 30 μm, or 15 μm to 20 μm. In addition, the range of the spot diameter r can be determined by a combination of any two of the values ​​included in the first group, for example, it can be 2 μm to 15 μm, 2 μm to 10 μm, 5 μm to 15 μm, or 5 μm to 10 μm. In addition, the range of the spot diameter r can be determined by a combination of any two of the values ​​included in the second group, for example, it can be 20 μm to 50 μm, 20 μm to 40 μm, 30 μm to 50 μm, or 30 μm to 40 μm.

[0181] The range of the pulse width W1 of the laser L1 can be determined by the first group consisting of 0.1ns, 0.2ns, 0.5ns and 1ns and / or the second group consisting of 2ns, 5ns, 10ns and 20ns. The lower limit of the range of the pulse width W1 can be determined by any one of the values ​​included in the above-mentioned first group. For example, the lower limit of the range of the pulse width W1 can be greater than 0.1ns, greater than 0.2ns, greater than 0.5ns, or greater than 1ns. In addition, the upper limit of the range of the pulse width W1 can be determined by any one of the values ​​included in the above-mentioned second group. For example, the upper limit of the range of the pulse width W1 can be less than 2ns, less than 5ns, less than 10ns, or less than 20ns.

[0182] The range of the pulse width W1 of the laser L1 can be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group, for example, it can be 0.1ns to 20ns, 0.2ns to 10ns, 0.5ns to 5ns, or 1ns to 2ns. In addition, the range of the pulse width W1 can be determined by a combination of any two of the values ​​included in the first group, for example, it can be 0.1ns to 1ns, 0.1ns to 0.5ns, 0.2ns to 1ns, or 0.2ns to 0.5ns. In addition, the range of the pulse width W1 can be determined by a combination of any two of the values ​​included in the second group, for example, it can be 2ns to 20ns, 2ns to 10ns, 5ns to 20ns, or 5ns to 10ns.

[0183] The range of the period W2 of the pulse of the laser L1 can be determined by the first group consisting of 1ns, 2ns, 5ns and 10ns and / or the second group consisting of 20ns, 50ns, 100ns and 200ns. The lower limit of the range of the period W2 can be determined by any one of the values ​​included in the above-mentioned first group. For example, the lower limit of the range of the period W2 can be more than 1ns, more than 2ns, more than 5ns, or more than 10ns. In addition, the upper limit of the range of the period W2 can be determined by any one of the values ​​included in the above-mentioned second group. For example, the upper limit of the range of the period W2 can be less than 20ns, less than 50ns, less than 100ns, or less than 200ns.

[0184] The range of the period W2 of the pulse of the laser L1 can be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group, for example, it can be from 1 ns to 200 ns, from 2 ns to 100 ns, from 5 ns to 50 ns, or from 10 ns to 20 ns. In addition, the range of the period W2 can be determined by a combination of any two of the values ​​included in the first group, for example, it can be from 1 ns to 10 ns, from 1 ns to 5 ns, from 2 ns to 10 ns, or from 2 ns to 5 ns. In addition, the range of the period W2 can be determined by a combination of any two of the values ​​included in the second group, for example, it can be from 20 ns to 200 ns, from 20 ns to 100 ns, from 50 ns to 200 ns, or from 50 ns to 100 ns.

[0185] The range of the peak output P1 of the laser L1 can be determined by the first group consisting of 100kW, 200kW, 300kW and 400kW and / or the second group consisting of 500kW, 600kW, 800kW and 1000kW. The lower limit of the range of the peak output P1 can be determined by any one of the values ​​included in the above-mentioned first group. For example, the lower limit of the range of the peak output P1 can be above 100kW, above 200kW, above 300kW, or above 400kW. In addition, the upper limit of the range of the peak output P1 can be determined by any one of the values ​​included in the above-mentioned second group. For example, the upper limit of the range of the peak output P1 can be below 500kW, below 600kW, below 800kW, or below 1000kW.

[0186] The range of the peak output P1 can be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group, for example, it can be 100 kW to 1000 kW, 200 kW to 800 kW, 300 kW to 600 kW, or 400 kW to 500 kW. In addition, the range of the peak output P1 can be determined by a combination of any two of the values ​​included in the first group, for example, it can be 100 kW to 400 kW, 100 kW to 300 kW, 200 kW to 400 kW, or 200 kW to 300 kW. In addition, the range of the peak output P1 can be determined by a combination of any two of the values ​​included in the second group, for example, it can be 500 kW to 1000 kW, 500 kW to 800 kW, 600 kW to 1000 kW, or 600 kW to 800 kW.

[0187] The pulse energy and pulse width W1 of the laser L1 can be set to suppress the wide scattering of the second electrode 50. For example, the laser L1 can have a pulse energy of 1.5 mJ to 2.0 mJ and a pulse width W1 of 5 ns to 7 ns. In this case, the laser L1 can have a pulse period W2 of 1 ns to 60 ns.

[0188] The values ​​of the pulse energy, pulse width W1, and peak output P1 of the laser light L1 are not limited to the above ranges, and these values ​​are appropriately adjusted according to the characteristics of the second electrode 50, the characteristics of the laser light L1, and the like.

[0189] according to Figures 1 to 16 In the embodiment shown, the laser L1 is irradiated to the area of ​​the second electrode 50 that does not overlap with the first electrode 30 when viewed from above, thereby forming the second electrode opening 51 in the second electrode 50. Therefore, compared with the case where the second electrode 50 is extended over the entire area of ​​the first surface 16, light is more likely to pass through the electronic device 10. As a result, the transmittance of the entire electronic device 10 can be improved. In addition, by using the laser L1, the second electrode 50 can be processed with good accuracy. For example, it is possible to suppress the shape of the second electrode opening 51 when viewed from above from deviating from the designed shape. The same is true for the shape of the organic layer opening 41 of the organic layer 40. The processing accuracy can be improved by using the above-mentioned laser mask 90.

[0190] In addition, by using the laser L1, it is easy to control the inclination angle of the side surface 52 of the second electrode opening 51 of the second electrode 50 and the side surface 42 of the organic layer opening 41 of the organic layer 40. For example, compared with when the side surface is formed by the end of the layer composed of the material attached to the substrate 15 by the evaporation method using an evaporation mask, the angle formed by the side surface 52 of the second electrode 50 or the side surface 42 of the organic layer 40 with respect to the normal direction of the first surface 16 of the substrate 15 can be reduced.

[0191] As a comparison method, the case where the second electrode is formed by an evaporation method using an evaporation mask is considered. In this case, if the direction in which the material of the second electrode flies in the evaporation process is inclined relative to the normal direction of the first surface 16 of the substrate 15, the shape of the second electrode formed on the substrate 15 when viewed from above is likely to deviate from the shape of the through hole of the evaporation mask. In order to suppress this deviation, it is required to reduce the thickness of the evaporation mask. However, if the thickness of the evaporation mask is reduced, it is believed that the strength of the evaporation mask is reduced, and the evaporation mask is easily damaged. In addition, it is also believed that it is difficult to clean and reuse the evaporation mask to which the material of the second electrode is attached, and the manufacturing cost of the electronic device 10 increases.

[0192] On the other hand, according to the present embodiment, since the second electrode 50 is processed by the laser light L1 , the second electrode 50 can be processed with high accuracy.

[0193] It should be noted that various changes may be made to the above-mentioned one embodiment. Hereinafter, other embodiments will be described with reference to the accompanying drawings as needed. In the following description and the accompanying drawings used in the following description, for parts that can be constructed in the same manner as the above-mentioned one embodiment, the same symbols as those used for the corresponding parts in the above-mentioned one embodiment are used, and repeated descriptions are omitted. In addition, in other embodiments, when the effects obtained in the above-mentioned one embodiment can also be obviously obtained, the description thereof is sometimes omitted.

[0194] Reference Figures 17 to 23 , an electronic device 10 and a method for manufacturing the same according to another embodiment of the present invention will be described. Fig.17 is a cross-sectional view showing an example of the electronic device 10. In addition, Fig.18A Yes Fig.17 1 is an enlarged cross-sectional view of an electronic device 10. The electronic device 10 may include an insulating layer 60 located between the first surface 16 of the substrate 15 and the organic layer 40 in the normal direction of the first surface 16. The insulating layer 60 may include an insulating layer first opening 61. When viewed from above, the first electrode 30 may be located in the insulating layer first opening 61. Although not shown in the figure, a portion of the first electrode 30 may be located between the insulating layer 60 and the first surface 16 of the substrate 15.

[0195] In addition, the insulating layer 60 may include an insulating layer second opening 62. The insulating layer second opening 62 may overlap with the second electrode opening 51 of the second electrode 50 in a plan view. In addition, the insulating layer second opening 62 may overlap with the organic layer opening 41 of the organic layer 40 in a plan view. The insulating layer 60 includes a side surface 63 facing the insulating layer second opening 62. Fig.18A As shown, the upper end of the side surface 63 of the insulating layer 60 may contact the lower end of the side surface 42 of the organic layer 40. Such a relationship between the side surface 63 and the side surface 42 may be achieved when the organic layer opening 41 and the insulating layer second opening 62 are formed by laser processing.

[0196] The insulating layer 60 includes a material having insulating properties, such as, for example, a resin material such as polyimide resin.

[0197] Next, Fig.17 An example of a method for manufacturing the electronic device 10 shown will be described.

[0198] First, with Figure 5 and Figure 6 As in the case of the above-described embodiment shown, the substrate 15 having the first electrode 30 formed thereon is prepared. Next, an insulating layer forming step is performed to form the insulating layer 60 having the insulating layer first opening 61 on the first surface 16 of the substrate 15 . Fig.19 and Fig. 20 It is a cross-sectional view and a plan view showing an example of the substrate 15 in a state where the first electrode 30 and the insulating layer 60 are formed. Fig.19 Equivalent to Fig. 20 The cross-sectional view of the substrate 15 is shown along the line XIX-XIX.

[0199] In the insulating layer forming step, for example, first, a solution containing a material of the insulating layer 60 is applied to the first surface 16 side of the substrate 15, and the solution is dried, thereby forming the insulating layer 60 over the entire area of ​​the first surface 16. Next, the insulating layer 60 is exposed and developed, thereby forming the insulating layer first opening 61 in the insulating layer 60. In this way, the insulating layer 60 can be formed between the first electrodes 30.

[0200] Then, if Fig.21 As shown, an organic layer forming step of forming an organic layer 40 on the first electrode 30 is performed. The organic layer 40 may be formed so as to overlap the first electrode 30 and the insulating layer 60 in a plan view. In this way, a laminate 18 may be prepared, which includes: a substrate 15; two or more first electrodes 30 located on the first surface 16 of the substrate 15; an insulating layer 60 located between the first electrodes 30; and an organic layer 40 located on the first electrode 30.

[0201] Then, if Fig. 22As shown in FIG. 1 , a second electrode forming step of forming the second electrode 50 is performed. In the second electrode forming step, Figure 5 and Figure 6 As in the case of the above-described embodiment shown, the second electrode 50 is formed on the organic layer 40 so as to overlap with two or more first electrodes 30 in a plan view.

[0202] Then, if Fig.23 As shown in FIG. 1 , a removal step is performed: a region of the second electrode 50 that does not overlap with the first electrode 30 when viewed from above is partially removed to form a second electrode opening 51. Fig.23 As shown, in the removal step, the region of the second electrode 50 that overlaps with the insulating layer 60 in a plan view can be partially removed to form the second electrode opening 51. Fig.23 As shown, the removal step may include an irradiation step of irradiating the second electrode 50 with the laser light L1. By irradiating the second electrode 50 with the laser light L1, as described above, Fig.17 As shown in FIG. 1 , the second electrode opening 51 can be formed in the second electrode 50. In this way, the electronic device 10 including the second electrode 50 including the second electrode opening 51 can be obtained.

[0203] The irradiation step may include the following step: after forming the second electrode opening 51 in the second electrode 50, irradiating the region of the organic layer 40 overlapping with the second electrode opening 51 with the laser light L1. By irradiating the organic layer 40 with the laser light L1, as described above, Fig.17 As shown, the organic layer opening 41 overlapping with the second electrode opening 51 can be formed in the organic layer 40 .

[0204] In addition, the irradiation step may include the following step: after the organic layer opening 41 is formed in the organic layer 40, the region of the insulating layer 60 overlapping with the organic layer opening 41 is irradiated with the laser L1. By irradiating the insulating layer 60 with the laser L1, as described above Fig.17 As shown, the insulating layer second opening 62 overlapping with the second electrode opening 51 and the organic layer opening 41 can be formed in the insulating layer 60 .

[0205] In the organic layer opening 41, the first surface 16 of the substrate 15 may be exposed or not exposed. "Exposed" means that no layer is formed on the first surface 16. "Not exposed" means that a certain layer is formed on the first surface 16. Fig.18BAs shown, in the organic layer opening 41, the insulating layer 60 may be located on the first surface 16 of the substrate 15. The thickness of the insulating layer 60 located in the organic layer opening 41 when viewed from above may be smaller than the thickness of the insulating layer 60 overlapping with the organic layer 40 when viewed from above. For example, in the process of irradiating the region of the insulating layer 60 overlapping with the organic layer opening 41 with the laser L1, the insulating layer 60 is partially removed in the thickness direction, thereby generating such an insulating layer 60. By leaving the insulating layer 60 in the organic layer opening 41, it is possible to prevent the two first electrodes 30 adjacent to each other with the organic layer opening 41 sandwiched therebetween from being electrically connected when viewed from above.

[0206] Although not shown, a layer having insulating properties and different from the insulating layer 60 may be located on the first surface 16 of the substrate 15 in the insulating layer second opening 62. This can prevent two adjacent first electrodes 30 sandwiching the insulating layer second opening 62 from being electrically connected.

[0207] Reference Fig.24A Next, an electronic device 10 according to another embodiment of the present invention will be described. The electronic device 10 may include a protective layer 70 that overlaps with the second electrode 50 and the second electrode opening 51 in a plan view.

[0208] The protective layer 70 includes a material having insulation and transparency. The material of the protective layer 70 may be an organic material or an inorganic material. For example, the protective layer 70 may include a resin material such as a polyimide resin, an acrylic resin, or an epoxy resin. For example, the protective layer 70 may include an inorganic material. The inorganic material may be an inorganic nitride such as silicon nitride, or an inorganic oxide such as silicon oxide or aluminum oxide. The protective layer 70 is composed of these materials and may include two or more layers stacked in the thickness direction of the substrate 15.

[0209] like Fig.24A As shown in FIG. 1 , when the upper end 53 of the side surface 52 of the second electrode 50 is raised higher than the surrounding second electrodes 50, the upper end 53 of the side surface 52 of the second electrode 50 can enter the protective layer 70. Therefore, the contact area between the second electrode 50 and the protective layer 70 increases. Thus, it is possible to suppress the protective layer 70 from being peeled off from the second electrode 50.

[0210] like Fig.24A As shown, the protective layer 70 may cover the side surface of the organic layer 40. The protective layer 70 can prevent water vapor, oxygen, etc. in the atmosphere from entering the organic layer 40. Thus, the degradation of the organic layer 40 can be prevented.

[0211] The protective layer 70 may be extended along the cross-sectional shape of the organic layer 40. For example, Fig.24A As shown, the surface of the protective layer 70 overlapping the second electrode opening 51 may be located between the surface of the second electrode 50 overlapping the first electrode 30 and the first surface 16 in the thickness direction of the substrate 15 .

[0212] The protective layer 70 may have a thickness greater than the total thickness of the first electrode 30, the organic layer 40, and the second electrode 50. For example, Fig. 24B As shown, the surface of the second electrode 50 overlapping the first electrode 30 may be located between the surface of the protective layer 70 overlapping the second electrode opening 51 and the first surface 16 in the thickness direction of the substrate 15 .

[0213] The step of forming the protective layer 70 may include a step of applying a liquid containing a material of the protective layer 70 to the second electrode 50 and the second electrode opening 51. The protective layer 70 may also be formed by other methods.

[0214] Reference Figure 25 to Figure 28 , an electronic device 10 and a manufacturing method thereof according to another embodiment of the present invention are described. In the above embodiment, an example is shown in which the second electrode 50 located on the organic layer 40 is removed to form the second electrode opening 51. Here, an example in which the second electrode opening 51 is formed by removing a region of the second electrode 50 that does not overlap with the organic layer 40 when viewed from above is described.

[0215] Fig.25 1 is a cross-sectional view showing an example of the electronic device 10 of this embodiment. Fig.25 As shown, the organic layer 40 does not face the second electrode opening 51 of the second electrode 50 , and the end 47 of the organic layer 40 may overlap with the second electrode 50 in a plan view.

[0216] Next, Fig.25 An example of a method for manufacturing the electronic device 10 shown will be described.

[0217] First, with Figure 5 and Figure 6 As in the case of the above-mentioned embodiment shown in FIG. 1 , a substrate 15 having a first electrode 30 formed thereon is prepared. Fig.26 As shown in FIG. 1 , an organic layer forming step of forming an organic layer 40 on the first electrode 30 is performed. Fig.26 As shown, there may be a gap where no organic layer 40 exists between two adjacent organic layers 40 in a plan view.

[0218] Then, if Fig. 27 As shown in FIG. 1 , a second electrode forming step of forming the second electrode 50 is performed. In the second electrode forming step, Figure 5 and Figure 6 Similar to the case of the above-described embodiment, the second electrode 50 is formed on the organic layer 40 and on the first surface 16 of the substrate 15 so that the second electrode 50 overlaps with two or more first electrodes 30 in a plan view.

[0219] Then, if Fig.28As shown in FIG. 1 , a removal step is performed: a region of the second electrode 50 that does not overlap with the first electrode 30 when viewed from above is partially removed to form a second electrode opening 51. Fig.28 As shown, in the removal step, the region of the second electrode 50 that does not overlap with the organic layer 40 in a plan view may be partially removed to form the second electrode opening 51. Fig.28 As shown, the removal step may include an irradiation step of irradiating the second electrode 50 with the laser light L1. By irradiating the second electrode 50 with the laser light L1, as described above, Fig.25 As shown in FIG. 1 , the second electrode opening 51 can be formed in the second electrode 50. In this way, the electronic device 10 including the second electrode 50 including the second electrode opening 51 can be obtained.

[0220] Reference Figure 29 to Figure 36 , an electronic device 10 and a method for manufacturing the same according to another embodiment of the present invention will be described.

[0221] The method of forming the organic layer 40 on the first electrode 30 in this embodiment is described. The organic layer forming step of forming the organic layer 40 includes a step of vapor depositing an organic material on the substrate 15 using two or more vapor deposition masks 80. For example, three vapor deposition masks 80 are used.

[0222] Fig.29 1 is a top view showing an example of the first vapor deposition mask 80A. The first vapor deposition mask 80A includes a first shielding area 82A and a first through hole 81A. The first through hole 81A can be arranged along the third direction D3 and the fourth direction D4. The first organic layer 40A is formed by the organic material that passes through the first through hole 81A and adheres to the substrate 15.

[0223] Fig.30 1 is a top view showing an example of the second vapor deposition mask 80B. The second vapor deposition mask 80B includes a second shielding area 82B and a second through hole 81B. The second through hole 81B can be arranged along the third direction D3 and the fourth direction D4. The second organic layer 40B is formed by the organic material that passes through the second through hole 81B and adheres to the substrate 15.

[0224] Fig.31 1 is a top view showing an example of the third vapor deposition mask 80C. The third vapor deposition mask 80C includes a third shielding area 82C and a third through hole 81C. The third through hole 81C can be arranged along the first direction D1 and the second direction D2. The third organic layer 40C is formed by the organic material that passes through the third through hole 81C and adheres to the substrate 15.

[0225] Two or more vapor deposition masks 80 used to form the organic layer 40 are also referred to as a “vapor deposition mask set”.

[0226] Next, the positional relationship among the first vapor deposition mask 80A, the second vapor deposition mask 80B, and the third vapor deposition mask 80C will be described. Fig.32 1 is a plan view showing an example of a mask laminate 85. The mask laminate 85 includes two or more vapor deposition masks 80 stacked on each other. Fig.32 The mask laminate 85 shown includes a first vapor deposition mask 80A, a second vapor deposition mask 80B, and a third vapor deposition mask 80C which are stacked on each other.

[0227] In the mask laminate 85, the alignment marks of the vapor deposition masks 80A to 80C may overlap. Alternatively, the vapor deposition masks 80A to 80C may overlap based on the arrangement of the through holes 81A to 81C and the shielding regions 82A to 82C of the vapor deposition masks 80A to 80C. When overlapping the vapor deposition masks 80A to 80C, tension may or may not be applied to the vapor deposition masks 80A to 80C.

[0228] The image of the state where two or more vapor deposition masks 80 are overlapped can be obtained by overlapping the image data of each vapor deposition mask 80. For example, first, the image data related to the contours of the through holes 81A to 81C of each vapor deposition mask 80A to 80C is obtained using a camera. Then, the image data of each vapor deposition mask 80A to 80C is overlapped using an image processing device. In this way, it is possible to produce Fig.32 When acquiring the image data, tension may be applied to each vapor deposition mask 80A to 80C, or tension may not be applied. The image of the state where two or more vapor deposition masks 80 are overlapped can be obtained by overlapping the design drawings used to manufacture each vapor deposition mask 80A to 80C.

[0229] Fig.32 , the contour of the first through hole 81A is indicated by a dashed line, the contour of the second through hole 81B is indicated by a dotted line, and the contour of the third through hole 81C is indicated by a solid line. The mask laminate 85 includes an overlapping shielding region 83. The overlapping shielding region 83 refers to a region where the shielding regions 82A to 82C of each vapor deposition mask 80 overlap each other when viewed from above.

[0230] A portion of the overlapping shielding region 83 may be located between the first through hole 81A and the second through hole 81B adjacent to each other in the first direction D1, and between two third through holes 81C adjacent to each other in the second direction D2. The other overlapping shielding region 83 may be located between two third through holes 81C adjacent to each other in the first direction D1, and between the first through hole 81A and the second through hole 81B adjacent to each other in the second direction D2.

[0231] Fig.33 is shown by using Figures 29 to 31FIG. 1 is a top view of an example of organic layers 40A to 40C formed by using vapor deposition masks 80A to 80C. The organic material constituting the first organic layer 40A, the organic material constituting the second organic layer 40B, and the organic material constituting the third organic layer 40C cannot reach the substrate 15 at the position of the overlapping shielding area 83. In this case, the organic layer 40 includes an organic layer opening 41. The organic layer opening 41 is generated at a position corresponding to the overlapping shielding area 83.

[0232] A portion of the organic layer openings 41 may be located between the first organic layer 40A and the second organic layer 40B adjacent to each other in the first direction D1, and between two third organic layers 40C adjacent to each other in the second direction D2. Other organic layer openings 41 may be located between two third organic layers 40C adjacent to each other in the first direction D1, and between the first organic layer 40A and the second organic layer 40B adjacent to each other in the second direction D2.

[0233] Fig.34 It is shown that the Fig.33 The second electrode 50 includes a region overlapping with the organic layers 40A to 40C when viewed from above, and a region overlapping with the organic layer opening 41 when viewed from above. The second electrode 50 may be formed over the entire display region of the electronic device 10. The second electrode 50 may include a layer continuously developed without gaps. The second electrode 50 may also be composed of one layer continuously developed without gaps. The second electrode 50 may be formed by a single vapor deposition process.

[0234] The removal step may locally remove the region of the second electrode 50 that overlaps the organic layer opening 41 in a plan view. For example, in the removal step, the region of the second electrode 50 that overlaps the organic layer opening 41 in a plan view may be irradiated with laser light. Thus, the second electrode opening 51 is formed in the second electrode 50. Fig.35 1 is a plan view showing an example of a second electrode 50 having a second electrode opening 51 formed therein. The second electrode opening 51 overlaps with the organic layer opening 41 in a plan view. The second electrode opening 51 may be surrounded by the organic layer opening 41 in a plan view. A portion of the second electrode 50 may overlap with the organic layer opening 41 in a plan view.

[0235] Fig.36 Observe along the XXXVI-XXXVI line Fig.35 A cross-sectional view of an electronic device 10 is shown. Fig.36 As shown in FIG. 5 , the outer edge 51 a of the second electrode opening 51 may be located inside the end 47 of the organic layer 40 . Fig.36 As shown, the second electrode 50 can overlap with the side surface 42 of the organic layer 40 in a plan view. The "inner side" refers to a side close to the center of the second electrode opening 51 in a plan view.

[0236] Symbol K1 represents the distance from the outer edge 51a of the second electrode opening 51 to the end 47 of the organic layer 40 when viewed from above. The distance K1 may be, for example, greater than 0.1 μm, greater than 0.5 μm, or greater than 1.0 μm. The distance K1 may be, for example, less than 2.0 μm, less than 4.0 μm, or less than 8.0 μm. The range of the distance K1 may be determined by the first group consisting of 0.1 μm, 0.5 μm, and 1.0 μm and / or the second group consisting of 2.0 μm, 4.0 μm, and 8.0 μm. The range of the distance K1 may be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the distance K1 may be determined by a combination of any two of the values ​​included in the first group. The range of the distance K1 may be determined by a combination of any two of the values ​​included in the second group. For example, it can be greater than 0.1μm and less than 8.0μm, greater than 0.1μm and less than 4.0μm, greater than 0.1μm and less than 2.0μm, greater than 0.1μm and less than 1.0μm, greater than 0.1μm and less than 0.5μm, greater than 0.5μm and less than 8.0μm, greater than 0.5μm and less than 4.0μm, greater than 0.5μm and less than 2.0μm, greater than 0.5μm and less than 1.0μm, greater than 1.0μm and less than 8.0μm, greater than 1.0μm and less than 4.0μm, greater than 1.0μm and less than 2.0μm, greater than 2.0μm and less than 8.0μm, greater than 2.0μm and less than 4.0μm, or greater than 4.0μm and less than 8.0μm.

[0237] According to the present embodiment, the second electrode 50 includes a region overlapping with the organic layer opening 41 when viewed from above. In other words, the removal step is performed without irradiating the organic layer 40 with laser light. Thus, it is possible to suppress the scattering of the material of the organic layer 40. Therefore, it is possible to suppress the electronic device 10 from being contaminated by the scattered material of the organic layer 40.

[0238] Reference Figures 37 to 41 , an electronic device 10 according to another embodiment of the present invention is described. Fig.37 1 is a plan view showing an example of the electronic device 10. The electronic device 10 is, for example, a smartphone.

[0239] like Fig.37 As shown, the electronic device 10 may include a first display area 101 and a second display area 102. The second display area 102 may have an area smaller than the first display area 101. Fig.37As shown, the second display area 102 may be surrounded by the first display area 101. Although not shown, a portion of the outer edge of the second display area 102 may be located on the same straight line as a portion of the outer edge of the first display area 101.

[0240] Fig.38 Yes Fig.37 The second display area 102 and its surroundings are shown in an enlarged top view. In the first display area 101, the elements 20 can be arranged along two different directions. Fig.38 In the example shown, the elements 20 of the first display area 101 may be arranged along the third direction D3 and the fourth direction D4.

[0241] The element 20 includes a second electrode 50. The second electrode 50 located in the first display region 101 is also referred to as a second electrode 50X. The second electrode 50 located in the second display region 102 is also referred to as a second electrode 50Y.

[0242] The second electrode 50X has a first occupancy. The first occupancy is calculated by dividing the total area of ​​the second electrodes 50 located in the first display region 101 by the area of ​​the first display region 101. The second electrode 50Y has a second occupancy. The second occupancy is calculated by dividing the total area of ​​the second electrodes 50 located in the second display region 102 by the area of ​​the second display region 102. The second occupancy may be smaller than the first occupancy. For example, Fig.38 As shown, the second display area 102 may include the second electrode opening 51. The second electrode opening 51 may not overlap with the second electrode 50Y in a plan view.

[0243] The ratio of the second occupancy to the first occupancy may be, for example, greater than 0.2, greater than 0.3, or greater than 0.4. The ratio of the second occupancy to the first occupancy may be, for example, less than 0.6, less than 0.7, or less than 0.8. The range of the ratio of the second occupancy to the first occupancy may be determined by the first group consisting of 0.2, 0.3, and 0.4 and / or the second group consisting of 0.6, 0.7, and 0.8. The range of the ratio of the second occupancy to the first occupancy may be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the ratio of the second occupancy to the first occupancy may be determined by a combination of any two of the values ​​included in the first group. The range of the ratio of the second occupancy to the first occupancy may be determined by a combination of any two of the values ​​included in the second group. For example, it may be greater than 0.2 and less than 0.8, greater than 0.2 and less than 0.7, greater than 0.2 and less than 0.6, greater than 0.2 and less than 0.4, greater than 0.2 and less than 0.3, greater than 0.3 and less than 0.8, greater than 0.3 and less than 0.7, greater than 0.3 and less than 0.6, greater than 0.3 and less than 0.4, greater than 0.4 and less than 0.8, greater than 0.4 and less than 0.7, greater than 0.4 and less than 0.6, greater than 0.8 and less than 0.6, greater than 0.7 and less than 0.7.

[0244] When the second occupancy is less than the first occupancy, the second display area 102 has a higher transmittance than the first display area 101. In this case, in the second display area 102, the light reaching the electronic device 10 easily reaches the optical components on the back side of the substrate 15. The optical components are components such as cameras that realize a certain function by detecting light. The functions of the second display area 102 realized by detecting light are, for example, sensors such as cameras, fingerprint sensors, and facial recognition sensors.

[0245] The second electrode 50 of the first display area 101 may be extended over substantially the entire area of ​​the first display area 101. For example, the first occupancy rate may be 90% or more, 95% or more, 98% or more, 99% or more, 99.5% or more, 99.9% or more, or 100%.

[0246] Fig.39 FIG. 1 is a top view showing an example of the first display area 101. Fig.38 and Fig.39As shown, the elements 20 in the first display region 101 may be arranged along the third direction D3 with a 31st period P31. The elements 20 in the first display region 101 may be arranged along the fourth direction D4 with a 41st period P41.

[0247] Fig.40 It is a plan view showing an example of the second display area 102 . Fig.41 1 is a top view showing an example of the organic layer 40 of the second display area 102. Fig.38 , Fig.40 and Fig.41 As shown, the elements 20 of the second display area 102 may be arranged along the third direction D3 with a 32nd period P31. The 32nd period P32 may be greater than the 31st period P31. The elements 20 of the second display area 102 may be arranged along the fourth direction D4 with a 42nd period P42. The 42nd period P42 may be greater than the 41st period P41.

[0248] Since the second display area 102 includes the element 20, when the element 20 is a pixel, an image can be displayed in the second display area 102. As described above, in the second display area 102, light reaching the electronic device 10 easily reaches the optical components on the back side of the substrate 15. Therefore, the second display area 102 can detect light and display an image.

[0249] The ratio of the 32nd period P32 to the 31st period P31 may be, for example, greater than 1.1, greater than 1.3, or greater than 1.5. The ratio of the 32nd period P32 to the 31st period P31 may be, for example, less than 2.0, less than 3.0, or less than 4.0. The range of the ratio of the 32nd period P32 to the 31st period P31 may be determined by the first group consisting of 1.1, 1.3, and 1.5 and / or the second group consisting of 2.0, 3.0, and 4.0. The range of the ratio of the 32nd period P32 to the 31st period P31 may be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the ratio of the 32nd period P32 to the 31st period P31 may be determined by a combination of any two of the values ​​included in the first group. The range of the ratio of the 32nd period P32 to the 31st period P31 may be determined by a combination of any two of the values ​​included in the second group. For example, it may be 1.1 to 4.0, 1.1 to 3.0, 1.1 to 2.0, 1.1 to 1.5, 1.1 to 1.3, 1.3 to 4.0, 1.3 to 3.0, 1.3 to 2.0, 1.3 to 1.5, 1.5 to 4.0, 1.5 to 3.0, 1.5 to 2.0, 2.0 to 4.0, 2.0 to 3.0, or 3.0 to 4.0. When the ratio of the 32nd period P32 to the 31st period P31 is small, the difference in the pixel density of the second display area 102 relative to the pixel density of the first display area 101 is reduced. Thus, it is possible to suppress the visual difference between the first display area 101 and the second display area 102.

[0250] As the numerical range of the ratio of the 42nd period P42 to the 41st period P41, the above-mentioned numerical range of the ratio of the 32nd period P32 to the 31st period P31 can be adopted.

[0251] In the above-mentioned embodiments, an example is shown in which the second electrode 50 is partially removed by irradiating the second electrode 50 with laser. However, the method of partially removing the second electrode 50 is not limited to laser irradiation. For example, the second electrode 50 may be partially removed by etching such as dry etching or wet etching.

Claims

1. A method for manufacturing an electronic device, comprising the following steps: A preparation step of preparing a laminate including a substrate having a first surface and a second surface located on the opposite side of the first surface, two or more first electrodes located on the first surface of the substrate, and an organic layer on the first electrode; a second electrode forming step of forming a second electrode on the organic layer so as to overlap with two or more first electrodes when viewed along a normal direction of the first surface of the substrate; and a removing step of locally removing a region of the second electrode that does not overlap with the first electrode when viewed from above, The organic layer of the laminate includes a first organic layer and a second organic layer that overlap each other at a position that does not overlap the first electrode when viewed from above. The removing step includes a step of at least partially removing the first organic layer and the second organic layer that overlap each other. The removing step includes an irradiation step of irradiating the second electrode with laser light to form a second electrode opening. The irradiation step includes the step of irradiating a region of the organic layer that overlaps with the second electrode opening in a plan view with laser light to form an organic layer opening.

2. The method for manufacturing an electronic device according to claim 1, wherein: The removing step locally removes a region of the second electrode that is located between the first electrodes in a plan view.

3. The method for manufacturing an electronic device according to claim 1, wherein: The irradiation step includes a step of irradiating the second electrode with laser light through a through hole of a laser mask to form a second electrode opening.

4. The method for manufacturing an electronic device according to claim 1, wherein: The second electrode includes a side surface facing the second electrode opening, The height of the side surface of the second electrode is greater than the thickness of a region of the second electrode overlapping with the first electrode in a plan view.

5. The method for manufacturing an electronic device according to claim 4, wherein: The height of the side surface of the second electrode is 1.1 times or more the thickness of a region of the second electrode overlapping with the first electrode in a plan view. 6 . The method for manufacturing an electronic device according to claim 1 , further comprising the step of forming a protective layer overlapping the second electrode and the second electrode opening in a plan view.

7. The method for manufacturing an electronic device according to claim 1, wherein: A width of a side surface of the organic layer facing the organic layer opening is 2.0 μm or less.

8. The method for manufacturing an electronic device according to any one of claims 1 to 5, wherein: The laminate includes an organic layer opening located between two adjacent organic layers in a plan view, The second electrode forming step forms the second electrode in such a manner that the second electrode overlaps the organic layer and the organic layer opening in a plan view. The removing step partially removes a region of the second electrode that overlaps with the organic layer opening in a plan view.

9. The method for manufacturing an electronic device according to any one of claims 1 to 5, wherein: The laminate includes an insulating layer located between the first electrodes in a plan view.

10. The method for manufacturing an electronic device according to claim 9, wherein: The removing step includes a step of partially removing the insulating layer.

11. The method for manufacturing an electronic device according to any one of claims 1 to 5, wherein: The preparation step includes a step of vapor-depositing a material of the organic layer onto the first electrode through a through hole of a vapor deposition mask.

12. An electronic device comprising: A substrate having a first surface and a second surface located on the opposite side of the first surface; Two or more first electrodes located on the first surface of the substrate; an organic layer on the first electrode; and a second electrode located on the organic layer and extending so as to overlap on two or more of the first electrodes in a plan view, The second electrode includes a second electrode opening that does not overlap with the first electrode in a plan view, and a side surface facing the second electrode opening. The height of the side surface of the second electrode is greater than an average value of the thickness of a region of the second electrode overlapping with the first electrode in a plan view. The organic layer includes an organic layer opening overlapping with the second electrode opening in a plan view, The organic layer comprises a first organic layer and a second organic layer, The first organic layer includes a side surface facing the organic layer opening, The second organic layer includes a side surface of the organic layer opening which the side surface facing the first organic layer faces.

13. The electronic device according to claim 12, wherein: The height of the side surface of the second electrode is 1.1 times or more the average value of the thickness of a region overlapping with the first electrode in a plan view.

14. The electronic device according to claim 12, wherein: The second electrode opening is surrounded by the second electrode in a plan view.

15. The electronic device according to claim 12, wherein: The upper end of the side surface of the second electrode has an outline surrounding the second electrode opening in a plan view.

16. The electronic device according to claim 15, wherein: The second electrode includes a base having an outline surrounding an outline of an upper end of the side surface of the second electrode in a plan view. The thickness of the second electrode at the base portion is 1.05 times the average value of the thickness of a region overlapping with the first electrode in a plan view. 17 . The electronic device according to claim 12 , further comprising a protective layer overlapping the second electrode and the second electrode opening in a plan view.

18. The electronic device according to claim 17, wherein: The surface of the protective layer overlapping with the second electrode opening is located between the surface of the second electrode overlapping with the first electrode and the first surface in the thickness direction of the substrate.

19. The electronic device according to claim 17, wherein: The surface of the second electrode overlapping the first electrode is located between the surface of the protective layer overlapping the second electrode opening and the first surface in the thickness direction of the substrate.

20. The electronic device according to claim 12, wherein: An upper end of the side surface of the first organic layer and an upper end of the side surface of the second organic layer are in contact with a lower end of the side surface of the second electrode.

21. The electronic device according to claim 20, wherein: The width of the side surface of the organic layer is 2.0 μm or less.

22. The electronic device according to any one of claims 12 to 16, wherein: The organic layer includes an organic layer opening that overlaps with a portion of the second electrode and the second electrode opening in a plan view.

23. The electronic device according to claim 22, wherein: The second electrode overlaps with the side surface of the organic layer in a plan view.

24. The electronic device according to any one of claims 12 to 16, comprising an insulating layer including a first opening of the insulating layer overlapping the first electrode in a plan view and located between the first surface of the substrate and the organic layer in a normal direction of the first surface of the substrate.

25. The electronic device according to claim 24, wherein: The insulating layer includes an insulating layer second opening located between the first electrodes and overlapping with the second electrode opening in a plan view.

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