Power semiconductor module and method for manufacturing a power semiconductor module

Abstract

A method for manufacturing a power semiconductor module arrangement, comprising: arranging at least one semiconductor substrate (10) in an enclosure (40), each semiconductor substrate (10) comprising a dielectric insulation layer (11) and a first metallization layer (111) attached to the dielectric insulation layer (11), and the enclosure (40) comprising at least one through-hole (64) extending through a component (66, 662) of the enclosure (40); inserting at least one pin or bolt (62) into the at least one through-hole (64), wherein an upper end of the pin or bolt (62) is not inserted into the through-hole (64); arranging a printed circuit board (44) on the enclosure (40); arranging the enclosure (40) on a heat sink (12), the heat sink (12) comprising at least one hole (64), wherein the enclosure (40) is arranged on the heat sink (12) such that each of the at least one through-hole (64) is aligned with one of the at least one hole (64) in the heat sink (12); and using a first pressing tool (70), thereby exerting a force on at least one defined contact area of the printed circuit board (44) and pressing each of the at least one pin or bolt (62) into a respective hole (64) in the heat sink (12), wherein each of the at least one defined contact area is arranged directly above one of the at least one pin or bolt (62).

Description

Technical Field

[0001] This disclosure relates to power semiconductor modules and methods for manufacturing such power semiconductor modules. Background Technology

[0002] Power semiconductor modules typically include a semiconductor substrate disposed within a housing. A semiconductor device comprising multiple controllable semiconductor elements (e.g., two IGBTs in a half-bridge configuration) can be disposed on the substrate. The substrate typically includes a substrate layer (e.g., a ceramic layer), a first metallization layer deposited on a first side of the substrate layer, and a second metallization layer deposited on a second side of the substrate layer. For example, the controllable semiconductor elements are mounted on the first metallization layer. The second metallization layer may be attached to a heat sink, a substrate, or a ground surface of the housing. The controllable semiconductor devices are typically mounted to the semiconductor substrate using soldering or sintering techniques. One or more contact elements are typically provided, allowing access to the semiconductor device from outside the housing. Power semiconductor modules are known in which contact elements are disposed on the substrate and protrude through a cover of the housing in a direction substantially perpendicular to the main surface of the substrate. The protruding sections of the contact elements from the housing can be mechanically and electrically coupled to a printed circuit board. The printed circuit board typically includes vias, and the contact elements are inserted through the corresponding vias.

[0003] To attach a housing containing a semiconductor substrate to a heat sink, the housing (or a suitable protrusion attached to the housing) and the heat sink may include threaded holes. Screws can be inserted through these threaded holes, thereby securing the housing, to which the printed circuit board is attached, to the heat sink. The vias in the printed circuit also need to allow the screws to be secured in the threaded holes using appropriate tools (e.g., a screwdriver). However, a disadvantage of providing vias in a printed circuit board is that certain areas of the printed circuit board are lost and cannot be used to provide conductive paths. Therefore, the printed circuit board needs to be larger or requires conductive paths with more layers, which increases the overall cost of the device.

[0004] There is a need for a semiconductor module device that can be mounted on a heat sink, wherein the printed circuit board of the device is as small and inexpensive as possible. Summary of the Invention

[0005] A method for manufacturing a power semiconductor module device includes: arranging at least one semiconductor substrate in a housing, each semiconductor substrate including a dielectric insulating layer and a first metallization layer attached to the dielectric insulating layer, and the housing including at least one through-hole of a component extending through the housing; inserting at least one pin or bolt into the at least one through-hole, wherein the upper end of the pin or bolt is not inserted into the through-hole; arranging a printed circuit board on the housing; arranging the housing on a heat sink, the heat sink including at least one hole, wherein the housing is arranged on the heat sink such that each of the at least one through-hole is aligned with one of the at least one holes in the heat sink; and using a first pressing tool to apply force to at least one defined contact area of ​​the printed circuit board and press each of the at least one pin or bolt into a corresponding hole in the heat sink, wherein each of the at least one defined contact area is directly disposed above one of the at least one pin or bolt.

[0006] A power semiconductor module device includes: a housing having at least one through-hole extending through the housing; at least one semiconductor substrate disposed in the housing and including a dielectric insulating layer and a first metallization layer attached to the dielectric insulating layer; a printed circuit board disposed outside the housing; a heat sink including at least one hole, wherein the housing is disposed on the heat sink such that each of the at least one through-hole is aligned with one of the at least one holes in the heat sink; and at least one pin or bolt, wherein each of the at least one pin or bolt extends through one of the at least one through-hole and into a corresponding hole in the heat sink, and wherein an upper end of the pin or bolt is not inserted into the through-hole; wherein each of the at least one pin or bolt is disposed below at least one defined contact area of ​​the printed circuit board, wherein the at least one defined contact area is configured to be exposed to pressure applied by a first pressing tool.

[0007] The invention can be better understood by referring to the following figures and description. The components in the figures are not necessarily drawn to scale; rather, the focus is on illustrating the principles of the invention. Furthermore, similar reference numerals designate corresponding parts in different views within the figures. Attached Figure Description

[0008] Figure 1 This is a cross-sectional view of a power semiconductor module device.

[0009] Figure 2 This is a cross-sectional view of the power semiconductor module device based on the example.

[0010] Figure 3 This is a cross-sectional view of a power semiconductor module device based on another example.

[0011] Figure 4This is a cross-sectional view of a power semiconductor module device based on another example.

[0012] Figure 5 This is a cross-sectional view of a power semiconductor module device based on another example.

[0013] Figure 6 This is a cross-sectional view of a power semiconductor module device based on another example.

[0014] include Figures 7A to 7D Figure 7 schematically illustrates a method for manufacturing a power semiconductor module device. Detailed Implementation

[0015] In the following detailed description, reference is made to the accompanying drawings. The drawings illustrate specific examples in which the invention can be practiced. It should be understood that, unless otherwise specifically indicated, the features and principles described with respect to the various examples can be combined with each other. The designation of certain elements as “first element,” “second element,” “third element,” etc., in the specification and claims should not be construed as enumerative. Rather, such designations are only used to address different “elements.” That is, for example, the presence of a “third element” does not require the presence of a “first element” and a “second element.” A wire or electrical connection as described herein may be a single conductive element or may comprise at least two separate conductive elements connected in series and / or in parallel. Wires and electrical connections may comprise metallic and / or semiconductor materials and may be permanently conductive (i.e., non-switchable). A semiconductor body as described herein may be made of (doped) semiconductor material and may be a semiconductor chip or may be included within a semiconductor chip. The semiconductor body has electrical connection pads and includes at least one semiconductor element having electrodes.

[0016] refer to Figure 1 The diagram shows a cross-sectional view of a power semiconductor module. The power semiconductor module includes a housing and a semiconductor substrate 10. The semiconductor substrate 10 includes a dielectric insulating layer 11, a (structured) first metallization layer 111 attached to the dielectric insulating layer 11, and a second (structured) metallization layer 112 attached to the dielectric insulating layer 11. The dielectric insulating layer 11 is disposed between the first metallization layer 111 and the second metallization layer 112. However, it is also possible for the semiconductor substrate 10 to include only the first metallization layer 111, omitting the second metallization layer 112.

[0017] Each of the first metallization layer 111 and the second metallization layer 112 may be composed of or include one of the following materials: copper; copper alloy; aluminum; aluminum alloy; any other metal or alloy that remains solid during operation of the power semiconductor module device. The semiconductor substrate 10 may be a ceramic substrate, that is, a substrate in which the dielectric insulating layer 11 is a ceramic substrate (e.g., a thin ceramic layer). The ceramic may be composed of or include one of the following materials: alumina; aluminum nitride; zirconium oxide; silicon nitride; boron nitride; or any other dielectric ceramic. For example, the dielectric insulating layer 11 may be composed of or include one of the following materials: Al2O3, AlN, SiC, BeO, or Si3N4. For example, the substrate 10 may be, for example, a direct copper bonding (DCB) substrate, a direct aluminum bonding (DAB) substrate, or an active metal bonding (AMB) substrate. Furthermore, the substrate 10 may be an insulating metal substrate (IMS). For example, the insulating metal substrate generally includes a dielectric insulating layer 11, which comprises (filled with) a material such as epoxy resin or polyimide. For example, the material filling the dielectric insulating layer 11 can be ceramic particles. Such particles can include, for example, Si2O, Al2O3, AlN, or BN, and can have a diameter between about 1 μm and about 50 μm. The substrate 10 can also be a conventional printed circuit board (PCB) having a non-ceramic dielectric insulating layer 11. For example, the non-ceramic dielectric insulating layer 11 can be composed of or comprise a curable resin.

[0018] The semiconductor substrate 10 is disposed in the housing 40. Figure 1 The housing 40 shown only includes sidewalls and a cover, but no ground surface. Instead, the semiconductor substrate 10 forms the ground surface of the housing. However, this is merely an example. The housing 40 may also include a ground surface, such that the housing 40 forms a closed enclosure. For example, the semiconductor substrate 10 may be disposed on the heat sink 12. However, it is also possible for the power semiconductor module to include an additional substrate (not shown in the figures) disposed between the semiconductor substrate 10 and the heat sink 12. For example, such a substrate may form the ground surface of the housing 40. Figure 1 In this diagram, only one semiconductor substrate 10 is shown. In some power semiconductor module devices, more than one semiconductor substrate 10 may be arranged in a single housing 40. For example, housing 40 may include metal or metal alloy. However, for example, it is also possible for housing 40 to include an electrically insulating material such as plastic or ceramic. For example, housing 40 may also include a liquid crystal polymer.

[0019] One or more semiconductor bodies 20 may be disposed on the semiconductor substrate 10. Each of the semiconductor bodies 20 disposed on the semiconductor substrate 10 may include a diode, an IGBT (Insulated Gate Bipolar Transistor), a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), a JFET (Junction Field-Effect Transistor), a HEMT (High Electron Mobility Transistor), or any other suitable controllable semiconductor element.

[0020] One or more semiconductor bodies 20 may be formed on the semiconductor substrate 10 to create a semiconductor device. Figure 1 In the example shown are only two semiconductor bodies 20. Figure 1 The second metallization layer 112 of the semiconductor substrate 10 is a continuous layer. Figure 1 The first metallization layer 111 in the example is also a continuous layer. However, the first metallization layer 111 or the second metallization layer 112, or both, can also be structured layers. "Structured layer" means, for example, that the corresponding metallization layers 111, 112 are not continuous layers, but rather include recesses between different segments of the layer. Different semiconductor bodies 20 can be mounted to the same or different segments of the first metallization layer 111. Different segments of the first metallization layer 111 may not have electrical connections, or may be electrically connected to one or more other segments using, for example, bonding wires. For example, to name just a few, electrical connections may also include connecting plates or conductor rails. One or more semiconductor bodies 20 can be electrically and mechanically connected to the semiconductor substrate 10 via a conductive connection layer 22. For example, such a conductive connection layer 22 can be a solder layer, a conductive adhesive layer, or a sintered metal powder (e.g., sintered silver powder) layer. The semiconductor bodies 20 can also be electrically connected to the semiconductor substrate 10 via electrical connections 24, such as bonding wires or bonding strips.

[0021] The power semiconductor module also includes terminal elements 30. Terminal elements 30 are electrically connected to the semiconductor substrate 10, for example, electrically connected to a first metallization layer 111 of the semiconductor substrate 10, and form contact elements providing electrical connection between the interior and exterior of the housing 40. A first end of the terminal element 30 may be electrically and mechanically connected to the first metallization layer 111 via a conductive connection layer (not specifically shown). For example, such a conductive connection layer may be a solder layer, a conductive adhesive layer, or a sintered metal powder (e.g., sintered silver powder) layer. A second end of the terminal element 30 protrudes from the housing 40 to allow external electrical contact with the contact elements. The cover of the housing 40 may include an opening through which the terminal elements 30 protrude, such that their first side is inside the housing 40 and their second side is outside the housing 40. When the housing 40 is arranged to surround the semiconductor substrate 10, the terminal elements 30 may protrude vertically from the housing 40.

[0022] The power semiconductor module may also include a casting compound 5. For example, the casting compound 5 may be composed of or include silicon gel, or it may be a rigid molding compound. The casting compound 5 may partially fill the interior of the housing 40, thereby covering the semiconductor substrate 10 and the semiconductor body 20, as well as any other components and electrical connections 24 disposed on the semiconductor substrate 10. The electrical connections 24 (e.g., bonding wires or bonding strips) may electrically couple the semiconductor body 20 to the first metallization layer 111, to other semiconductor bodies 20, or to any other components that may be disposed within the housing. Terminal elements 30 may be partially embedded in the casting compound 5. However, at least the second end of the terminal element 30 may not be covered by the casting compound 5 and may protrude from it. The casting compound 5 is configured to protect the components and electrical connections inside the power semiconductor module device (particularly inside the housing 40) from certain environmental conditions, mechanical damage, and insulation failures.

[0023] The semiconductor substrate 10 can be connected through a bonding layer (in Figure 1 (Not specifically shown) is connected to heat sink 12. For example, this connection layer can be a solder layer, an adhesive material layer, or a sintered metal powder (e.g., sintered silver powder) layer. Any other kind of conductive or non-conductive connection layer is also possible.

[0024] The sidewalls of housing 40 are generally mechanically connected to the semiconductor substrate 10 via connectors (not specifically shown in the figures). For example, the connector can be a solder connector, a cold solder joint, or an adhesive connector. Any other suitable connector can also mechanically connect the sidewalls of housing 40 to the semiconductor substrate, providing a suitable seal so that no or at least minimal gas can enter housing 40. The sidewalls and ground surface can alternatively be provided as a single piece (not specifically shown). This means there is no connector between the sidewalls of housing 40 and the ground surface.

[0025] The terminal element 30, protruding from the housing 40, can be mechanically and electrically coupled to the printed circuit board 44. Typically, the printed circuit board 44 includes through-holes, and the terminal element 30 is inserted through the corresponding through-hole. The printed circuit board 44 may include conductive traces (not specifically shown), and the terminal element 30 can be electrically coupled to one or more other terminal elements 30 via one or more conductive traces. In this way, electrical connections can be provided between different segments of the first metallization layer 111, between different semiconductor bodies 20, and / or between any other components disposed on the semiconductor substrate 10 or on other substrates within the same housing 40. Typically, power semiconductor modules having semiconductor devices including semiconductor bodies 20 and terminal elements 30 are prefabricated, and customers can mount their own custom printed circuit boards 44 onto the prefabricated power semiconductor modules.

[0026] When the semiconductor module device having semiconductor substrate 10, housing 40 and printed circuit board 44 is fully assembled, the device is mounted to heat sink 12. Typically, housing 40 includes a protrusion with a threaded hole 54. Heat sink 12 may also include a threaded hole 54. Thus, housing 40 can be attached to heat sink 12 by screws 52 inserted into the threaded hole 54.

[0027] When the housing is mounted onto the heat sink 12, the printed circuit board 44 is typically already attached to the housing 40. In many cases, a large number of conductive traces are required on the printed circuit board 44. Therefore, the printed circuit board 44 is typically large in size and / or includes two or more conductive layers (e.g., a multilayer circuit board). The cross-sectional area of ​​the printed circuit board 44 is typically larger than that of the housing 40. Therefore, the printed circuit board 44 can protrude significantly beyond the sidewalls of the housing 40 in a horizontal plane. However, this makes it difficult to access the threaded holes 54 and screws 52 in order to mount the housing 40 onto the heat sink 12. For this reason, an opening 56 is provided in the printed circuit board 44. This opening 56 is arranged directly above the corresponding protrusion with the through hole 54 and is large enough in diameter to allow the screw 52 to be inserted into the threaded hole 54 and to allow the screw 52 to be accessed with a suitable tool for tightening. However, this opening 56 requires space in the printed circuit board 44, so this space cannot be used to provide conductive traces. This further increases the overall size of the printed circuit board 44 and the cost of the entire power semiconductor module device.

[0028] Now for reference Figure 2 The example shown schematically illustrates a power semiconductor module that does not require any openings in the printed circuit board 44 in order to allow the housing 40 to be mounted onto the heat sink 12. Figure 2 The device shown includes a pin or bolt 62 (i.e., a press bolt) for mounting the housing 40 onto the heat sink 12, rather than as described above. Figure 1The screw 52 is described. A pin or bolt 62 can be inserted into a through-hole 64 provided in a component of the housing 40. For example, this component can be a sidewall of the housing 40. Alternatively, for example, the component can include a protrusion 66 coupled to the sidewall of the housing 40. This protrusion 66 can be integrally formed with the sidewall of the housing 40, or can be attached to the sidewall in any suitable manner (e.g., via an adhesive layer). Before mounting the printed circuit board 44 onto the housing 40, the pin or bolt 62 can be inserted into the through-hole 64 provided in the component of the housing 40. At this time, the through-hole 64 remains easily accessible. After mounting the printed circuit board 44 onto the housing 40, the housing 40 can then be easily mounted onto the heat sink 12. The heat sink 12 also includes a hole 64. The pin or bolt 62 can be pushed into the hole 64 provided in the heat sink 12. Rotational movement of the pin or bolt 62 is not required. The diameter of the hole 64 in the heat sink 12 can be equal to or only slightly larger than the diameter of the pin or bolt 62. Each of at least one pin or bolt 62 is pressed into a corresponding hole 64 in the heat sink 12 by pressing force.

[0029] The through-hole 64 of the housing 40 into which the pin or bolt 62 is inserted can be directly disposed below the defined contact area of ​​the printed circuit board 44. A first pressing tool 70 can be used to apply force to at least one defined contact area of ​​the printed circuit board 44, thereby pressing each of at least one pin or bolt 62 into a corresponding hole 64 in the heat sink 12. The housing 40 can be disposed on the heat sink 12 such that the through-hole 64 in a component of the housing 40 aligns with the hole 64 provided in the heat sink 12. The pin or bolt 62 can have a sufficiently long length in the vertical direction y to allow the pin or bolt 62 to be inserted into the hole 64 in the heat sink 12 and still in direct contact with the printed circuit board 44, as... Figure 3 The diagram illustrates the fully assembled state. Figure 2 The device.

[0030] The pin or bolt 62 may include a body and a head, the head having a larger diameter than the body to prevent the pin or bolt 62 from falling through the through-hole 64 of the housing 40. Therefore, the upper end of the pin or bolt 62 (the end pointing towards the printed circuit board 44) ​​always remains outside the through-hole 64 in the component of the housing 40. The larger the diameter of the head, the more pressure applied to the pin or bolt 62 will be dispersed. That is, if the diameter of the head of the pin or bolt 62 becomes larger, the diameter of the defined area of ​​the printed circuit board 44 will become larger. Therefore, the pressure required to be applied to the printed circuit board 44 per unit area is reduced, which reduces the risk of damage to the printed circuit board 44. For example, the diameter of the first pressing tool 70 can be selected based on the diameter of the head. Even if pressure is applied directly to the printed circuit board 44, conductive traces can be provided in the defined contact area. It is not necessary to keep the contact area of ​​the printed circuit board 44 free of conductive traces. To reduce the risk of damage to any conductive traces arranged in the contact area, conductive traces can be implemented, for example, by depositing a thicker layer of conductive material when forming the conductive traces.

[0031] The pin or bolt 62 may comprise a material that does not deform or shrink when exposed to high temperatures. During use of the power semiconductor module device, heat is typically generated by the semiconductor device disposed on at least one semiconductor substrate 10. This heat is transferred to the heat sink 12 to prevent the component from overheating. The pin or bolt 62 should be securely pressed into the hole 64 of the heat sink 12 at all times to prevent the housing from detaching from the heat sink 12. Therefore, the pin or bolt 62 may be made of a material or mixture of materials that maintains its shape even at temperatures above 50°C or above 100°C. In this way, even at high temperatures, the diameter of the pin or bolt 62 remains substantially constant and remains securely pressed into the hole 62.

[0032] exist Figure 2 and Figure 3 In the example shown, pin or bolt 62 is in direct contact with printed circuit board 44. However, this is merely an example. Figure 4 As schematically shown in the example, a spacer element 68 may be arranged between the upper end of each of at least one pin or bolt 62 and the printed circuit board 44, and below the corresponding contact area of ​​the printed circuit board 44. In this way, the total length of the pin or bolt 62 in the vertical direction can be reduced. For example, the spacer element 68 may be a separate part or may be attached to the housing 40. The spacer element 68 is configured to span and bypass the distance between the pin or bolt 62 and the printed circuit board 44. The pressure applied to the printed circuit board 44 by the first pressing tool 70 is then transmitted to the spacer element 68, and from there to the pin or bolt 62, which is then pushed into the hole 64 in the heat sink 12. However, regardless of whether the device includes a spacer element 68 (see...), Figure 4 ) or does it exclude spacer element 68 (see Figure 2 and Figure 3 The pressing force is always applied via the printed circuit board 44 and is transmitted directly or indirectly to the pin or bolt 62.

[0033] exist Figure 2 , Figure 3 and Figure 4 In the example shown, the hole 64 in the heat sink 12 has a depth in the vertical direction y, which is less than the thickness of the heat sink 12 in the same direction y. However, this is merely an example. Figure 5 As exemplarily shown, the hole 64 in the heat sink 12 can also be a through hole having a depth in the vertical direction y equal to the thickness of the heat sink 12 in the same direction y. In this way, the pin or bolt 62 can be accessed from the bottom side of the power semiconductor module device, wherein the bottom side is the side of the power semiconductor module device on which the heat sink 12 is disposed. If the pin or bolt 62 is accessible from the bottom side, it can be pushed out from the hole 64 in the heat sink 12 if needed to remove the housing 40 from the heat sink 12. For example, a special removal tool (not specifically shown) can be used. For example, such a removal tool may include a pin having a diameter smaller than the diameter of the hole 64. In this way, force can be applied to the pin or bolt 62 from the bottom side, and the removal tool can be inserted into the hole 64 from the bottom side to completely push the pin or bolt 62 out of the hole 64.

[0034] Now for reference Figure 6 A resilient or elastic element 661 may be disposed between components 66, 662 (e.g., protrusions) of housing 40 and printed circuit board 44. The head of a pin or bolt 62 may be disposed between the resilient or elastic element 661 and printed circuit board 44. Each resilient or elastic element 661 may include a through-hole 64. At least one resilient or elastic element 661 may be disposed on components 66, 662 of housing 40 such that the through-hole 64 of the resilient or elastic element 661 aligns with the through-hole 64 of the corresponding component 66, 662. The resilient or elastic element 661 may be configured to limit the force applied to heat sink 12. The resilient or elastic element 661 may maintain its original shape as long as the pressure applied to it is below a defined threshold. If the pressure exceeds the threshold, the resilient or elastic element 661 deforms or is compressed.

[0035] exist Figure 5 and Figure 6 In the example shown, the device includes, as already mentioned... Figure 4 The spacer element 68 is described. However, in these examples, the spacer element 68 may also be omitted. Furthermore, as regarding... Figure 5The through-hole 64 in the described heat sink 12 can exist in any other example shown.

[0036] Using the above-mentioned Figures 2 to 6 When describing a pin or bolt 62, less time may be required to perform the actual installation process compared to a device including a screw 52, ​​since screwing in a screw 52 generally takes more time than pushing in a pin or bolt 62.

[0037] Referring now to Figure 7, an exemplary method for manufacturing a power semiconductor module device is shown. Figure 7A The method may include arranging at least one semiconductor substrate 10 in a housing 40. Each semiconductor substrate 10 may include a dielectric insulating layer 11 and a first metallization layer 111 attached to the dielectric insulating layer 11. The housing 40 may include at least one through-hole 64 extending through components 66, 662 of the housing 40. (Reference) Figure 7B The method further includes inserting at least one pin or bolt 62 into at least one through hole 64, wherein the upper end of the pin or bolt 62 is not inserted into the through hole 64. Subsequently, as... Figure 7C As shown, a printed circuit board 44 is arranged on a housing 40. Now refer to... Figure 7D The method further includes arranging a housing 40 on a heat sink 12, the heat sink 12 including at least one hole 64, wherein the housing 40 is arranged on the heat sink 12 such that each of the at least one through hole 64 is aligned with one of the at least one hole 64 in the heat sink 12. Using a first pressing tool 70, force is applied to at least one defined contact area of ​​the printed circuit board 44. This thereby presses each of at least one pin or bolt 62 into a corresponding hole 64 in the heat sink 12, wherein each of the at least one defined contact area is directly disposed above one of the at least one pin or bolt 62.

Claims

1. A method for manufacturing a power semiconductor module device, the method comprising: At least one semiconductor substrate (10) is disposed in a housing (40), each semiconductor substrate (10) including a dielectric insulating layer (11) and a first metallization layer (111) attached to the dielectric insulating layer (11), and the housing (40) including at least one through hole of a component (66, 662) extending through the housing (40); At least one pin or bolt (62) is inserted into the at least one through hole, wherein the upper end of the pin or bolt (62) is not inserted into the at least one through hole; The printed circuit board (44) is arranged on the housing (40); The housing (40) is disposed on a heat sink (12), the heat sink (12) including at least one hole, wherein the housing (40) is disposed on the heat sink (12) such that each of the at least one through hole is aligned with one of the at least one holes in the heat sink (12); and Using a first pressing tool (70), force is applied to at least one defined contact area of ​​the printed circuit board (44) and each of the at least one pin or bolt (62) is pressed into a corresponding hole in the heat sink (12), wherein each of the at least one defined contact area is directly positioned above one of the at least one pin or bolt (62).

2. The method according to claim 1, further comprising: Each of at least one conductive terminal element (30) is disposed on one of the at least one semiconductor substrate (10), thereby electrically and mechanically coupling a first end of each of the at least one conductive terminal element (30) to the corresponding semiconductor substrate (10), wherein Arranging the printed circuit board (44) on the housing (40) also includes electrically and mechanically coupling the printed circuit board (44) to a second end of each of the at least one conductive terminal element (30).

3. The method according to claim 1 or 2, further comprising arranging a spacer element (68) between the upper end of each of the at least one pin or bolt (62) and the printed circuit board (44), and arranging it below the corresponding contact area of ​​the printed circuit board (44).

4. The method according to any one of claims 1 to 2, wherein, Each of the at least one pin or bolt (62) is pressed into the corresponding hole in the heat sink (12) by a pressing force without performing any rotational movement of the at least one pin or bolt (62).

5. The method according to any one of claims 1 to 2, further comprising: At least one elastic or resilient element (661) is arranged on the components (66, 662) of the housing (40), wherein Each of the elastic or resilient elements (661) includes a through hole. Arranging the at least one elastic or resilient element (661) on the components (66, 662) of the housing (40) includes aligning the through-hole of each elastic or resilient element (661) with one of the at least one through-hole in the components (66, 662) of the housing (40), and As long as the pressure applied to the elastic or resilient element (661) is below a defined threshold, the elastic or resilient element (661) retains its original form, and if the pressure exceeds the defined threshold, the elastic or resilient element (661) deforms or is compressed.

6. A power semiconductor module device, comprising: A housing (40) having at least one through hole of a component (66, 662) extending through the housing (40); At least one semiconductor substrate (10) is disposed in the housing (40) and includes a dielectric insulating layer (11) and a first metallization layer (111) attached to the dielectric insulating layer (11); A printed circuit board (44) is disposed outside the housing (40); A heat sink (12), the heat sink (12) including at least one hole, wherein the housing (40) is disposed on the heat sink (12) such that each of the at least one through hole is aligned with one of the at least one holes in the heat sink (12); and At least one pin or bolt (62), wherein each of the at least one pin or bolt (62) extends through one of the at least one through holes and into a corresponding hole in the heat sink (12), and wherein the upper end of the pin or bolt (62) is not inserted into the at least one through hole; wherein Each of the at least one pin or bolt (62) is disposed below one of at least one defined contact area of ​​the printed circuit board (44), wherein the at least one defined contact area is configured to be exposed to pressure applied by the first pressing tool (70).

7. The power semiconductor module device according to claim 6, further comprising at least one conductive terminal element (30), said at least one conductive terminal element (30) being electrically and mechanically coupled to one of said at least one semiconductor substrate (10) via a first end, wherein, The printed circuit board (44) is electrically and mechanically coupled to the second end of each of the at least one conductive terminal element (30).

8. The power semiconductor module device according to claim 6 or 7, further comprising a spacer element (68) between the upper end of each of the at least one pin or bolt (62) and the printed circuit board (44), and below a corresponding contact area of ​​the printed circuit board (44).

9. The power semiconductor module device according to any one of claims 6 to 7, further comprising at least one elastic or resilient element (661) disposed on the components (66, 662) of the housing (40), wherein, Each of the elastic or resilient elements (661) includes a through hole, wherein the through hole of each elastic or resilient element (661) is aligned with one of the at least one through hole in the components (66, 662) of the housing (40), and wherein each of the at least one pin or bolt (62) extends through the through hole of one of the at least one elastic or resilient elements (661), through the at least one through hole in the corresponding component (66, 662), and into the corresponding hole in the heat sink (12).

10. The power semiconductor module device according to any one of claims 6 to 7, wherein, The at least one elastic or resilient element (661) is configured to deform when the pressure applied to the elastic or resilient element (661) exceeds a predefined threshold.

11. The power semiconductor module device according to any one of claims 6 to 7, wherein, The at least one hole in the heat sink (12) is a through hole extending from the upper surface of the heat sink (12) to the bottom surface opposite the upper surface, wherein the at least one pin or bolt (62) extends from the upper surface toward the printed circuit board (44), and wherein the at least one pin or bolt (62) is accessible from the bottom surface of the heat sink (12).

12. The power semiconductor module device according to any one of claims 6 to 7, wherein, The at least one pin or bolt (62) comprises a material that substantially retains its original shape at temperatures above 50°C or above 100°C.

13. The power semiconductor module device according to any one of claims 6 to 7, wherein, Each of the at least one pin or bolt (62) includes a body and a head at the upper end of the body, wherein the cross-sectional area of ​​the head is greater than the cross-sectional area of ​​the body.

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