Substrate processing equipment and substrate supporting unit

Abstract

An embodiment of the present invention provides a substrate processing device. The substrate processing device includes: a process chamber configured to form a processing space; a gas supply unit configured to supply process gas to the interior of the process chamber; a plasma generating unit configured to generate plasma from the process gas introduced into the interior of the process chamber; and a substrate supporting unit disposed in the processing space and configured to support a substrate, the substrate supporting unit may include: a first plate; and a second plate, which is adjacent to the first plate, and a gap may be formed between the first plate and the second plate, and a supply pipe is configured to supply gas to the space defined by the gap.

Description

Technical Field

[0001] Embodiments of the present invention relate to a substrate processing apparatus and a unit for supporting a substrate in the substrate processing apparatus. Background Art

[0002] In a processing device that processes a substrate by using plasma through a specific process, the substrate is controlled at a specific temperature. In the process using plasma, it is necessary to cool the semiconductor wafer to maintain the temperature of the semiconductor wafer because the substrate is heated by the plasma. For example, the substrate supported by the substrate supporting unit is cooled by circulating a coolant having a temperature lower than room temperature in the substrate supporting unit.

[0003] However, since the temperature of the substrate supporting unit becomes lower than the room temperature due to the coolant circulating inside the substrate supporting unit, components in a portion contacting the outside air may be dew-condensed. If components of the processing system are dew-condensed, serious problems such as malfunction of electrical components may occur in the operation of the facility due to moisture generated by the condensation.

[0004] An extremely low temperature plasma device that performs plasma processing in an extremely low temperature environment of -30°C or lower is particularly susceptible to condensation. Summary of the invention

[0005] Embodiments of the present invention provide a substrate processing apparatus and a substrate supporting unit that can effectively prevent condensation of components of the substrate supporting unit that are exposed to the atmosphere.

[0006] Embodiments of the present invention also provide a substrate processing apparatus and a substrate supporting unit having a relatively simple configuration that can effectively prevent condensation of components of the substrate supporting unit that are exposed to the atmosphere.

[0007] The technical objectives of the present invention are not limited to the above objectives, and other unmentioned technical objectives will be obvious to those skilled in the art from the following description.

[0008] An embodiment of the present invention provides a substrate processing device. The substrate processing device includes: a process chamber that forms a processing space; a gas supply unit that supplies process gas to the interior of the process chamber; a plasma generating unit that generates plasma from the process gas introduced into the interior of the process chamber; and a substrate supporting unit that is disposed in the processing space and supports the substrate, and the substrate supporting unit may include: a first plate; and a second plate that is adjacent to the first plate and may form a gap between the first plate and the second plate, and a supply pipe is configured to supply gas to the space defined by the gap.

[0009] In an embodiment, the first plate may include: a dielectric plate embedded with an electrostatic electrode which adsorbs a supported substrate using electrostatic force; and an electrode plate disposed under the dielectric plate and receiving power for generating plasma, and the second plate may be an insulator plate disposed under the first plate.

[0010] In an embodiment, the substrate supporting unit may further include: a dielectric plate embedded with an electrostatic electrode which adsorbs the supported substrate using electrostatic force; and an electrode plate disposed under the dielectric plate and receiving power for generating plasma, the first plate may be an insulator plate disposed under the electrode plate, and the second plate may be a bottom plate disposed under the insulator plate.

[0011] In an embodiment, a gap may be formed between the electrode plate and the insulator plate, and a supply pipe may supply gas to any one or more of the gap between the electrode plate and the insulator plate and the gap between the insulator plate and the bottom plate.

[0012] In an embodiment, a partial region of a side surface forming the supply pipe may be configured to be exposed to a gap between the insulator plate and the bottom plate, and one or more distribution holes may be formed in the partial region.

[0013] In an embodiment, the gap may be defined by a step formed in the insulator plate.

[0014] In an embodiment, the gap may be defined by a groove formed in any one or more of the first plate or the second plate.

[0015] In an embodiment, when viewing the trench from the top, the maximum diameter of the trench may be equal to or greater than the diameter of the wafer.

[0016] In an embodiment, the gas may be dry air or an inert gas.

[0017] In an embodiment, a substrate processing apparatus may process a substrate by using a very low temperature plasma.

[0018] The present invention provides a substrate supporting unit for supporting a substrate, the substrate supporting unit including an upper plate and a lower plate disposed below the upper plate, a gap may be formed between the upper plate and the lower plate, and the substrate supporting unit may further include a supply pipe that supplies gas into a space formed by the gap when passing through the lower plate.

[0019] In an embodiment, the upper plate includes a dielectric plate embedded with an electrostatic electrode which adsorbs a supported substrate using electrostatic force, and an electrode plate disposed under the dielectric plate and receiving power for generating plasma, and the lower plate may be an insulator plate.

[0020] In an embodiment, the substrate supporting unit may further include: a dielectric plate embedded with an electrostatic electrode which adsorbs the supported substrate using electrostatic force; and an electrode plate disposed under the dielectric plate and receiving power for generating plasma, the upper plate may be an insulator plate disposed under the electrode plate, and the lower plate may be a bottom plate.

[0021] In an embodiment, a gap may be formed between the electrode plate and the insulator plate, and a supply pipe may supply gas to any one or more of the gap between the electrode plate and the insulator plate and the gap between the insulator plate and the bottom plate.

[0022] In an embodiment, the supply pipe may have one or more distribution holes on a side surface exposed to a gap between the insulator plate and the bottom plate.

[0023] In an embodiment, the gap may be defined by a groove formed in the insulator plate.

[0024] In an embodiment, the gap may be defined by a groove formed on any one or more of the lower surface of the upper plate and the upper surface of the lower plate.

[0025] In an embodiment, the electrode plates may have channels through which a coolant flows.

[0026] According to another aspect of the inventive concept, a substrate processing device processes a substrate by using plasma, and includes: a process chamber that forms a processing space; a gas supply unit that supplies a process gas into the interior of the process chamber; a plasma generating unit that generates plasma from the process gas introduced into the interior of the process chamber; and a substrate supporting unit that is disposed in the processing space and supports the substrate, the substrate supporting unit including: a dielectric plate embedded with an electrostatic electrode that adsorbs the substrate; an electrode plate that is disposed below the dielectric plate and has a channel inside thereof for a coolant to flow through; an annular focusing ring that is disposed at the circumference of the dielectric plate; an insulator plate that is disposed below the electrode plate and is formed of an insulator; and a bottom plate that is disposed below the insulator plate and is grounded, a gap is formed at any one or more of positions between the electrode plate and the insulator plate and between the insulator plate and the bottom plate, and the gap includes a supply pipe for supplying dry air or an inert gas.

[0027] In an embodiment, the gap may include: a first gap formed between the electrode plate and the insulator plate; and a second gap formed between the insulator plate and the bottom plate, the upper end of the supply tube is located in the first gap, and a partial area of ​​the side surface of the supply tube is exposed to the second gap, and one or more distribution holes are formed in a partial area of ​​the side surface of the supply tube. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The above and other objects and features will become apparent from the description with reference to the following drawings, wherein like reference numerals refer to like parts throughout the various drawings unless otherwise specified.

[0029] Figure 1 2 is a view illustrating a substrate processing apparatus according to an embodiment of the inventive concept.

[0030] Figure 2 yes Figure 1 An enlarged cross-sectional view of portion "A" of FIG.

[0031] Figure 3 is a view illustrating a perspective view of an insulator plate according to an embodiment, viewed from the top.

[0032] Figure 4 is a view illustrating a perspective view of an insulator plate according to an embodiment, viewed from the bottom.

[0033] Figure 5 1 is a view illustrating a state in which a low-humidity gas is supplied to a gap in a cross-sectional view of a substrate supporting unit according to the first embodiment.

[0034] Figure 6 1 is a view illustrating a state in which a low-humidity gas is supplied to a gap in a cross-sectional view of a substrate supporting unit according to a second embodiment.

[0035] Figure 7 1 is a view illustrating a state in which a low-humidity gas is supplied to a gap in a cross-sectional view of a substrate supporting unit according to a third embodiment.

[0036] Figure 8 is a flowchart illustrating a method for operating a device according to an embodiment of the inventive concept. DETAILED DESCRIPTION

[0037] The above and other aspects, features and advantages of the inventive concept will become apparent from the following description of the following embodiments given in conjunction with the accompanying drawings. However, the inventive concept is not limited to the embodiments disclosed below, but may be implemented in various forms. The embodiments of the inventive concept are provided to make the disclosure of the inventive concept complete and fully inform those skilled in the art within the scope of the inventive concept.

[0038] Although undefined, all terms used herein (including technical or scientific terms) can have the same meaning generally accepted by the known technology in the field to which the inventive concept belongs. The terms defined by the general dictionary can be interpreted as the same meaning as the disclosure content of the related art and application, and even if not clearly defined in this article, it will not become conceptualized, nor will it be interpreted as too formal. The terms used herein are provided to describe the embodiments without limiting the inventive concept. In this specification, unless otherwise mentioned, the singular form includes the plural form. The expression "including (include)" and its various combinations (such as "including (including)") used in this specification do not exclude the existence or addition of one or more compositions, materials, elements, steps, operations and devices.

[0039] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0040] Figure 1 1 is an exemplary view illustrating a substrate processing device 10 according to an embodiment of the inventive concept. The substrate processing device 10 according to the illustrated embodiment is a plasma processing device (inductively coupled plasma processing device). The substrate processing device 10 processes a wafer W by using plasma. A semiconductor wafer (hereinafter referred to as "wafer W") is provided as an example of a substrate. For example, the substrate processing device 10 may perform an etching process on the wafer W. The substrate processing device 10 may include a process chamber 100, a substrate supporting unit 200, a plasma generating unit 300, a gas supply unit 400, a baffle unit 500, and a controller (not shown).

[0041] The process chamber 100 provides a processing space 101 in its interior, and a substrate processing process is performed in the processing space 101. The processing space 101 can be maintained at a process pressure lower than the atmospheric pressure, and can be a closed space. The process chamber 100 can be formed of a metal material. As an example, the process chamber 100 can be formed of aluminum. The surface of the process chamber 100 can be anodized. The process chamber 100 can be electrically grounded. The exhaust hole 102 can be formed on the bottom surface of the process chamber 100. The exhaust hole 102 can be connected to the exhaust line 151. The reaction byproducts generated in the process and the gas remaining in the internal space of the chamber can be discharged to the outside via the exhaust line 151. The pressure inside the process chamber 100 can be reduced to a specific pressure via the exhaust process.

[0042] According to an embodiment, a liner 130 may be provided in the interior of the process chamber 100. The liner 130 may have a cylindrical shape, the upper and lower surfaces of which are open. The liner 130 may be configured to contact the inner surface of the process chamber 100. By protecting the inner wall of the process chamber 100, the liner 130 may prevent the inner wall of the process chamber 100 from being damaged due to arc discharge. In addition, the liner 130 may prevent impurities generated during the substrate treatment process from being deposited on the inner wall of the process chamber 100. The liner 130 may be exposed to the processing space inside the process chamber 100 to react with the first cleaning gas, and may include yttrium oxide (Y2O3).

[0043] The window 140 is disposed at an upper portion of the process chamber 100. The window 140 has a plate shape. The window 140 seals the process space 101 by covering an opened upper surface of the process chamber 100. The window 140 may include a dielectric substance.

[0044] The substrate support unit 200 is disposed in the interior of the process chamber 100. In an embodiment, the substrate support unit 200 may be located in the interior of the process chamber 100 to be spaced apart from the bottom surface of the process chamber 100 by a certain distance upward. The substrate support unit 200 may support the wafer W. The substrate support unit 200 may include an electrostatic chuck ESC including an electrostatic electrode 223 that adsorbs the wafer W by using an electrostatic force. Different from this, the substrate support unit 200 may support the wafer W in various methods such as mechanical clamping. Hereinafter, the substrate support unit 200 including the electrostatic chuck ESC will be described as an example.

[0045] The substrate supporting unit 200 may include a dielectric plate 220 , an electrode plate 230 , a bottom plate 250 , an insulator plate 270 , and a supply pipe 280 .

[0046] The dielectric plate 220 and the electrode plate 230 may constitute an electrostatic chuck (ESC). The dielectric plate 220 may support the wafer W. The circumference of the dielectric plate 220 may be surrounded by the focusing ring 240. The dielectric plate 220 may be located at the upper end of the electrode plate 230. The dielectric plate 220 may be formed of a dielectric material and may have a disc shape. The wafer W may be positioned on the upper surface of the dielectric plate 220. The radius of the upper surface of the dielectric plate 220 may be smaller than the radius of the wafer W. Therefore, the edge area of ​​the wafer W may be located on the outer side of the dielectric plate 220. The edge of the wafer W may be positioned on the upper surface of the focusing ring 240.

[0047] The electrostatic electrode 223, the heater 225, and the first supply channel 221 may be included in the interior of the dielectric plate 220. The first supply channel 221 may extend from the upper surface of the dielectric plate 220 through the bottom surface of the dielectric plate 220. A plurality of first supply channels 221 are formed to be spaced apart from each other, and may serve as channels through which the heat transfer medium is supplied to the bottom surface of the wafer W.

[0048] The electrostatic electrode 223 may be electrically connected to the first power source 223a. The first power source 223a may include a DC power source. The switch 223b may be installed between the electrostatic electrode 223 and the first power source 223a. The electrostatic electrode 223 may be electrically connected or disconnected from the first power source 223a via the on / off of the switch 223b. When the switch 223b is turned on, a DC current may be applied to the electrostatic electrode 223. An electrostatic force may be applied between the electrostatic electrode 223 and the wafer W by the current applied to the electrostatic electrode 223, and the wafer W may be adsorbed to the dielectric plate 220 by the electrostatic force.

[0049] The heater 225 may be located below the electrostatic electrode 223. The heater 225 may be electrically connected to the second power source 225a. The heater 225 may generate heat while resisting the current applied to the second power source 225a. The generated heat may be transferred to the wafer W via the dielectric plate 220. The wafer W may be maintained at a specific temperature by the heat generated by the heater 225. The heater 225 may include a spiral coil.

[0050] The electrode plate 230 may be located at the lower portion of the dielectric plate 220. The bottom surface of the dielectric plate 220 and the upper surface of the electrode plate 230 may be bonded to each other by an adhesive 236. The electrode plate 230 may be formed of aluminum. The upper surface of the electrode plate 230 may be stepped so that its central area is higher than its edge area. The central area of ​​the upper surface of the electrode plate 230 may have a range corresponding to the bottom surface of the dielectric plate 220, and may be bonded to the bottom surface of the dielectric plate 220. The electrode plate 230 may have a first circulation channel 231, a second circulation channel 232, and a second supply channel 233 in its interior.

[0051] The first circulation channel 231 may be provided as a channel for the heat transfer medium to circulate through. The first circulation channel 231 may be formed in the interior of the electrode plate 230 to have a spiral shape. In addition, the first circulation channel 231 may be arranged so that the channels of the annular shape with different radii have the same center. The first circulation channels 231 may be connected to each other. The first circulation channels 231 may be formed at the same height.

[0052] The second circulation channel 232 may be provided as a channel for the coolant to circulate through. The second circulation channel 232 may be formed in the interior of the electrode plate 230 to have a spiral shape. In addition, the second circulation channel 232 may be arranged so that the channels of the annular shape with different radii have the same center. The second circulation channels 232 may be connected to each other. The cross-sectional area of ​​the second circulation channel 232 may be greater than the cross-sectional area of ​​the first circulation channel 231. The second circulation channel 232 may be formed at the same height. The second circulation channel 232 may be formed below the first circulation channel 231.

[0053] The second supply channels 233 may extend upward from the first circulation channels 231 and may be disposed on the upper surface of the electrode plate 230. The number of the second supply channels 233 corresponds to the number of the first supply channels 221 and may connect the first circulation channels 231 and the first supply channels 221.

[0054] The first circulation channel 231 may be connected to the heat transfer medium storage device 231a via a heat transfer medium supply line 231b. The heat transfer medium may be stored in the heat transfer medium storage device 231a. The heat transfer medium may include an inert gas. According to an embodiment, the heat transfer medium may include helium (He) gas. Helium may be supplied to the first circulation channel 231 via a supply line 231b, and may be supplied to the bottom surface of the wafer W after sequentially passing through the second supply channel 233 and the first supply channel 221. Helium may be used as a medium, and the heat transferred from the plasma to the wafer W by the helium is transferred to the dielectric plate 220.

[0055] The second circulation channel 232 can be connected to the coolant storage device 232a via a coolant supply line 232c. The coolant storage device 232a can store coolant. The cooler 232b can be arranged in the coolant storage device 232a. The cooler 232b can cool the coolant to a specific temperature. Different from this, the cooler 232b can be installed on the coolant supply line 232c. The coolant supplied to the second circulation channel 232 via the coolant supply line 232c can cool the electrode plate 230 while circulating along the second circulation channel 232. The electrode plate 230 can cool the dielectric plate 220 and the wafer W together, and cool to maintain the wafer W at a specific temperature. In an embodiment, the coolant can be cooled to 0°C (low temperature) or lower to be supplied. In a preferred embodiment, the coolant can be cooled to -30°C or lower (extremely low temperature) to be supplied. In an embodiment, the coolant cools the electrode plate 230 to an extremely low temperature of -30°C to -100°C, more preferably -30°C to -60°C.

[0056] The electrode plate 230 may include a metal plate. According to an embodiment, the entire electrode plate 230 may be formed by a metal plate. The electrode plate 230 may be electrically connected to a third power source 235a. The third power source 235a may be provided as a high-frequency power source for generating high-frequency power. The high-frequency power source may include an RF power source. The electrode plate 230 may receive high-frequency power from the third power source 235a. Therefore, the electrode plate 230 may be used as an electrode, that is, a lower electrode.

[0057] The focus ring 240 may be arranged at an edge region of the dielectric plate 220. The focus ring 240 may have a ring shape and may be arranged along the circumference of the dielectric plate 220. The upper surface of the focus ring 240 may be stepped so that its outer side 240a is higher than its inner side 240b. The inner side 240b of the upper surface of the focus ring 240 may be located at the same height as the height of the upper surface of the dielectric plate 220. The inner side 240b of the upper surface of the focus ring 240 may support an edge region of the wafer W located on the outer side of the dielectric plate 220. The outer side 240a of the focus ring 240 may be provided to surround the edge region of the wafer W. The focus ring 240 may control the electromagnetic field so that the density of the plasma is uniformly distributed throughout the entire region of the wafer W. Therefore, plasma is uniformly formed over the entire region of the wafer W so that a region of the wafer W may be uniformly etched.

[0058] The bottom plate 250 may be located at the lower end of the substrate support unit 200. The bottom plate 250 may be spaced apart upward from the bottom surface of the process chamber 100. A space 255 may be formed in the interior of the bottom plate 250. Although not illustrated, according to an embodiment, the lower portion of the bottom plate 250 may be open. In addition, although not illustrated, according to an embodiment, the upper portion of the bottom plate 250 may be open. The space 255 formed by the bottom plate 250 may be in fluid communication with the outside of the space 255. The outer diameter of the bottom plate 250 may have the same outer diameter as the outer diameter of the electrode plate 230. A lifting pin module (not shown) that moves the transferred wafer W from the transfer component on the outside to the dielectric plate 220 may be located in the space 255 inside the bottom plate 250. The lifting pin module (not shown) may be spaced apart from the bottom plate 250 by a specific interval. The bottom plate 250 may be formed of a metal material. The space 255 inside the bottom plate 250 may be provided with air. Since the dielectric constant of air is lower than that of an insulator, the air may reduce the electromagnetic field in the interior of the substrate supporting unit 200 .

[0059] The insulator plate 270 may be located between the dielectric plate 220 and the bottom plate 250. The insulator plate 270 may cover the upper surface of the bottom plate 250. The insulator plate 270 may have a cross-sectional area corresponding to the electrode plate 230. The insulator plate 270 may include an insulator. The insulator plate 270 may play a role in increasing the electrical distance between the electrode plate 230 and the bottom plate 250. The upper surface of the insulator plate 270 may have a step formed when its edge protrudes upward. The upper surface of the insulator plate 270 may have a groove formed by the step. The lower surface of the insulator plate 270 may have a step formed when its edge protrudes downward. The lower surface of the insulator plate 270 may have a groove formed by the step. The first gap 273 between the insulator plate 270 and the electrode plate 230 is defined by the groove formed on the upper surface of the insulator plate 270. A second gap 278 between the insulator plate 270 and the bottom plate 250 is defined by a groove formed on the lower surface of the insulator plate 270 .

[0060] The supply pipe 280 supplies low-humidity gas having a humidity lower than that of the external air of the substrate processing apparatus 10 to the first gap 273, the second gap 278, and the inner space 255. In an embodiment, the low-humidity gas is dry air, that is, air obtained after removing moisture in advance through a facility or a bomb in a factory, dry air obtained by removing moisture from air supplied to a room (e.g., a clean room) in which the substrate processing apparatus 10 is installed, or gas having a low moisture content, and the low-humidity gas may be oxygen, nitrogen, or an inert gas such as a bluff.

[0061] The cross section of the supply pipe 280 may be circular, and the supply pipe 280 may be cylindrical. The supply pipe 280 may be configured to pass through the bottom plate 250 and the insulator plate 270. When the substrate support unit 200 is viewed from the top, the supply pipe 280 is disposed at a position that deviates from the center of the substrate support unit 200 by a certain distance. In an embodiment, when the substrate support unit 200 is viewed from the top, a rod (not shown) that supplies power to the electrode plate 230 may be arranged at the center of the substrate support unit 200, and the supply pipe 280 may be disposed at a position that avoids the position of the rod (not shown). The supply pipe 280 may be formed of engineering plastics. The upper end of the supply pipe 280 is positioned to be exposed to the first gap 273. The supply pipe 280 is connected to the low humidity gas storage device 285a via a low humidity gas supply line 285b. The low humidity gas storage device 285a may be a dryer that produces dry air by removing moisture from the air of the clean room. In addition, the low humidity gas storage device 285a may be a gas tank in which the low humidity gas is stored. The low humidity gas storage device 285a may be disposed outside the process chamber 100. A flow meter (not shown) and a regulator (not shown) may be installed in the low humidity gas supply line 285b to constantly maintain the pressure and flow rate of the supplied low humidity gas.

[0062] Figure 2 yes Figure 1 The enlarged cross-sectional view of the portion "A" of the Figure 2 The low humidity gas supply structure using the supply pipe 280 is described in more detail. The upper end 281 of the supply pipe 280 is positioned to be exposed to the first gap 273. A partial area 284a of the side surface 284 of the supply pipe 280 is exposed to the second gap 278. One or more first distribution holes 282 are formed at the upper end 281 of the supply pipe 280. One or more second distribution holes 285 are formed in a partial area 284a of the side surface 284 of the supply pipe 280, and the partial area 284a is exposed to the second gap 278. One or more third distribution holes 286 are formed in an area of ​​the side surface 284 of the supply pipe 280, which is exposed to the internal space 255.

[0063] The interval G1 of the first gap 273 defined by the groove formed on the upper surface of the insulator plate 270 may be 0.3 mm to 0.7 mm. The interval G1 of the second gap 278 defined by the groove formed on the lower surface of the insulator plate 270 may be 0.3 mm to 0.7 mm. The suggested numerical ranges of the first gap 273 and the second gap 278 are only disclosed to make the concept of the present invention clear, and it is suggested that the numerical ranges are not intended to limit the scope of the concept of the present invention through the description of the concept of the present invention.

[0064] The diameter d1 of the first distribution hole 282, the diameter d2 of the second distribution hole 285, and the diameter d3 of the third distribution hole 286 formed in the supply pipe 280 may be 0.1 mm to 0.5 mm. The suggested numerical ranges of the diameter d1 of the first distribution hole 282, the diameter d2 of the second distribution hole 285, and the diameter d3 of the third distribution hole 286 are only disclosed to make the concept of the present invention clear, and the suggested numerical ranges are not intended to limit the scope of the concept of the present invention through the description of the concept of the present invention. The diameter d1 of the first distribution hole 282, the diameter d2 of the second distribution hole 285, and the diameter d3 of the third distribution hole 286 can be appropriately adjusted according to the design to control the injection speed and injection amount of the low humidity gas.

[0065] The existing gas existing in the first gap 273, the second gap 278, and the space 255 inside can be replaced by the low-humidity gas distributed to the first gap 273, the second gap 278, and the space 255 inside through the supply pipe 280. The low-humidity gas has a low dew point and can prevent condensation that may occur in the first gap 273, the second gap 278, and the space 255 inside. Preferably, the amount of the supplied low-humidity gas is minimized within the range of preventing condensation in the first gap 273, the second gap 278, and the space 255 inside. In the substrate supporting unit 200, the air in the first gap 273, the second gap 278, and the space 255 inside is controlled to a specific pressure and is continuously replaced by the supplied low-humidity gas while preventing condensation.

[0066] Figure 3 is a view illustrating a perspective view of an insulator plate according to an embodiment, viewed from the top. Figure 4 1 is a view illustrating a perspective view of an insulator plate according to an embodiment, viewed from the bottom. Figure 3 and Figure 4 The step defining the first gap 273 and the step defining the second gap 278 are described in more detail.

[0067] The upper surface of the insulator plate 270 has a step formed when its edge 271 protrudes. Due to the protrusion of the edge of the upper surface of the insulator plate 270, a groove is formed on the inner surface 272 of the insulator plate 270. For convenience of description, the edge of the groove is described as being circular, but the shape of the edge of the groove may be constrained for design reasons, such as constraints on coupling with other components or the position of the groove with other components. However, preferably, the depth of the entire groove is uniform. A hole 275 through which the supply pipe 280 passes is formed in the insulator plate 270. Basically, holes through which the first power line 223c, the second power line 225c, the third power line 235c, the heat transfer medium supply pipeline 231b and the coolant supply pipeline 232c pass are formed in the insulator plate 270, but their description will be omitted.

[0068] The lower surface of the insulator plate 270 has a step formed when its edge 276 protrudes. Due to the protrusion of the edge of the lower surface of the insulator plate 270, a groove is formed on the inner surface 277 of the insulator plate 270. For convenience of description, the edge of the groove is described as being round, but the shape of the edge of the groove may be constrained for design reasons, such as constraints on coupling with other components or the position of the groove with other components.

[0069] The maximum diameter D1 of the edge of the groove formed on the upper surface of the insulator plate 270 may be equal to or greater than the diameter of the supported wafer W. Since the area obtained by protruding the first gap 273 up and down corresponds to the wafer W, a higher insulation effect can be obtained by the gas layer filled in the gap. The maximum diameter D2 of the edge of the groove formed on the lower surface of the insulator plate 270 may be equal to or greater than the diameter of the supported wafer W.

[0070] Reference again Figure 1 , the bottom plate 250 may have a connection part 253. The connection part 253 may connect the outer surface of the bottom plate 250 and the inner wall of the process chamber 100. A plurality of connection parts 253 may be disposed on the outer surface of the bottom plate 250 at certain intervals. The connection part 253 may support the substrate supporting unit 200 in the interior of the process chamber 100. In addition, the bottom plate 250 may be connected to the inner wall of the process chamber 100 to be electrically grounded. A first power line 223c connected to the first power supply 223a, a second power line 225c connected to the second power supply 225a, third power lines 236c, 237c and 238c connected to the third power supply 235a, a heat transfer medium supply pipeline 231b connected to the heat transfer medium storage device 231a, a coolant supply pipeline 232c connected to the coolant storage device 232a, a low humidity gas supply pipeline 285b connected to the low humidity gas storage device 285a, and the like can extend into the base plate 250 via the space 255 inside the connecting component 253.

[0071] The plasma generating unit 300 can excite the process gas in the process chamber 100 into a plasma state. The plasma generating unit 300 can use an inductively coupled plasma (ICP) type plasma source. When using an ICP type plasma source, an antenna 330 disposed at the upper portion of the process chamber 100 and an electrode plate 230 provided as a lower electrode disposed in the process chamber 100 can be included. The antenna 330 and the electrode plate 230 can be arranged vertically parallel to each other, with the processing space 101 in between. The antenna 330 and the electrode plate 230 can receive an RF signal from the RF power supply 310 and can receive energy for generating plasma. An electromagnetic field can be formed in the space between the two electrodes, and the process gas supplied to the space can be excited into a plasma state. The substrate processing process is performed by using plasma. The RF signal applied to the antenna 330 and the electrode plate 230 can be controlled by a controller (not shown). According to an embodiment of the inventive concept, the waveguide 320 may be disposed above the antenna 330, and the waveguide 320 delivers the RF signal provided from the RF power source 310 to the antenna 330. The waveguide 320 may have a conductor that may be inserted into the waveguide. The plasma generated by the plasma generating unit 300 processes the wafer W cooled to an extremely low temperature (-30° C. or lower). The process of processing the wafer W into plasma in an extremely low temperature environment is called an extremely low temperature plasma process.

[0072] The gas supply unit 400 may supply process gas into the interior of the process chamber 100. The gas supply unit 400 may include a gas supply nozzle 410, a gas supply line 420, and a gas storage device 430. The gas supply nozzle 410 may be installed at a central portion of the window 140 corresponding to the upper surface of the process chamber 100. A spray hole may be formed on the bottom surface of the gas supply nozzle 410. The process gas may be supplied into the interior of the process chamber 100 via the spray hole. The gas supply line 420 may connect the gas supply nozzle 410 and the gas storage device 430. The gas supply line 420 may supply the process gas stored in the gas storage device 430 to the gas supply nozzle 410. A valve 421 may be installed in the gas supply line 420. The valve 421 may open and close the gas supply line 420, and may adjust the flow rate of the process gas supplied via the gas supply line 420.

[0073] The process gas supplied by the gas supply unit 400 may be methane (CF 4 ), hydrogen (H 2 ), hydrogen bromide (HBr), nitrogen trifluoride (NF 3 ), difluoromethane (CH 2 F 2), oxygen (O 2 ) 2 ) and hydrogen fluoride (HF) or a combination thereof. Meanwhile, regardless of the embodiment, the suggested process gas may be selected differently as needed. The process gas according to an embodiment of the inventive concept etches the substrate after being excited into a plasma state.

[0074] The baffle unit 500 may be located between the inner wall of the process chamber 100 and the substrate supporting unit 200. The baffle 510 may have a ring shape. The baffle 510 may have a plurality of through holes 511. The process gas provided into the process chamber 100 may pass through the through holes 511 of the baffle 510 to be exhausted through the exhaust hole 102. The flow rate of the process gas may be controlled according to the shape of the baffle 510 and the shape of the through holes 511.

[0075] The controller (not shown) can control the overall operation of the substrate processing device 10. The controller (not shown) may include a central processing unit (CPU), a read only memory (ROM) and a random access memory (RAM). The CPU performs the desired processing according to various recipes stored in the memory area, such as etching described below. The control information of the equipment on the process conditions (such as process time, process pressure, high frequency power or voltage, various gas flow rates, chamber temperature (electrode temperature, temperature of the side wall of the chamber and temperature of the electrostatic chuck) and the temperature of the cooler 232b) is input as a recipe. At the same time, the recipe representing the program or processing conditions can be stored in a hard disk or a semiconductor memory. In addition, the recipe can be set at a specific location in the memory area and contained in a non-temporary computer-readable storage medium (such as a CD-ROM or a DVD).

[0076] Figure 5 1 is a view illustrating a state in which low-humidity gas is supplied to the gap in a cross-sectional view of the substrate supporting unit according to the first embodiment. Figure 5 The substrate supporting unit according to the first embodiment described is different from the substrate supporting unit according to the reference Figures 1 to 4 The embodiment described is the same. The supply pipe 280 supplies low humidity gas to the first gap 273, the second gap 278 and the inner space 255 at the same time. The filled gas is continuously replaced by the supplied low humidity gas. The filled gas is discharged to the outside of the substrate support unit through the gap that is inevitably formed when assembling the components. Therefore, condensation caused between the components of the substrate support unit can be prevented.

[0077] Figure 61 is a view illustrating a state in which low humidity gas is supplied to a gap in a cross-sectional view of a substrate support unit according to a second embodiment. According to the substrate support unit of the second embodiment, a first gap 1273 is formed between a first plate (or upper plate) formed by a dielectric plate 220 and an electrode plate 230 and an insulator plate 1270 as a second plate (or lower plate) disposed below the electrode plate 230. The first gap 1273 is defined by a step formed on an upper surface of the insulator plate 1270. An upper end of a supply pipe 1280 is located within the first gap 1273, and the supply pipe 1280 supplies low humidity gas to the first gap 1273. One or more holes are formed on a side surface of the supply pipe 1280 exposed to an internal space 255, and low humidity gas can be supplied to the internal space 255.

[0078] Figure 7 2 is a view illustrating a state in which low humidity gas is supplied to a gap in a cross-sectional view of a substrate support unit according to a third embodiment. The substrate support unit according to the third embodiment is provided with an electrostatic chuck formed by a dielectric plate 220 and an electrode plate 230, and is provided with an insulator plate 2270, which is a first plate (or upper plate) disposed below the electrode plate 230. A bottom plate 250 as a second plate (or lower plate) is disposed below the insulator plate 2270. A second gap 2278 is formed between the insulator plate 2270 and the bottom plate 250. The second gap 2278 is defined by a step formed on the lower surface of the insulator plate 1270. The upper end of the supply pipe 2280 is located in the second gap 2278, and the supply pipe 1280 supplies low humidity gas to the second gap 2278. One or more holes are formed on the side surface of the supply pipe 2280 exposed to the internal space 255, and the low humidity gas can be supplied to the internal space 255.

[0079] Figure 8 1 is a flow chart illustrating a method for operating an apparatus according to an embodiment of the inventive concept. According to an embodiment of the inventive concept, the internal atmosphere of the processing space 101 is prepared to perform an extremely low temperature process. When preparing the internal atmosphere, the substrate support unit 200 is controlled to an extremely low temperature by supplying a coolant to the second circulation channel 232 of the substrate support unit 200. Low-humidity gas is supplied through the supply pipe 280 that controls the substrate support unit 200 to an extremely low temperature (step S10). Thereafter, the substrate W is moved into the interior of the processing space 101 (step S20), and the process is performed in a state where the temperature of the substrate W is controlled to an extremely low temperature (step S30). The substrate W on which the process has been completely performed is taken out from the processing space 101 of the process chamber 100 (step S40). The supply of low-humidity gas is continuously performed in all the processing processes.

[0080] Although it is described as a representative example in the above embodiment that the step forming the gap is formed in the insulator plate, the step forming the gap may be formed in the electrode plate or the bottom plate.

[0081] Although it is described as a representative example in the above embodiment that the step forming the gap is formed only in the insulator plate, it may be formed in both the electrode plate and the bottom plate.

[0082] In the above embodiment, the gap may be a gap caused by a machining tolerance during assembly. Meanwhile, the gap formed by a step is defined as a gap that is artificially formed to have a distance of the machining tolerance or more. When a gap of the machining tolerance or more is artificially formed, the coolant can be communicated more smoothly, and an additional insulation effect can be obtained by the gap.

[0083] Although not illustrated, a plurality of supply pipes may be provided. Using a plurality of supply pipes, the low humidity gas may be advantageously replaced more quickly. However, since the configuration associated with the supply unit becomes more complicated as the number of supply pipes increases, the number of supply pipes may be appropriately adjusted according to the design.

[0084] According to the inventive concept, even if only one supply pipe is used, low-humidity gas can be supplied and filled in gaps due to assembly.

[0085] As in an embodiment of the inventive concept, when a groove formed by steps is formed, low humidity gas may be filled in the groove at a constant pressure, and thus the gas may flow and communicate uniformly and smoothly, so that condensation may be effectively prevented.

[0086] In an embodiment, when the amount of low-humidity gas deviates from a control range, the controller may ensure the safety of the facility by controlling so as to generate an interlock.

[0087] The substrate support unit according to the concept of the present invention can be applied not only to an inductively coupled plasma device but also to other plasma processing devices, including a capacitively coupled plasma (CCP) device, a plasma processing device using a radial line slot antenna, a helicon wave plasma (HWP) device, and an electron cyclotron resonance (ECR) plasma device.

[0088] Furthermore, the substrate processed by the substrate processing apparatus according to the inventive concept is not limited to a wafer, and may be, for example, a large substrate for a flat panel display, an EL device, or a substrate for a solar cell.

[0089] The etching process has been described as an embodiment, and the inventive concept may be applied to a substrate processing apparatus that performs a deposition process.

[0090] According to various embodiments of the inventive concept, dew condensation components of a substrate supporting unit exposed to the atmosphere may be effectively prevented.

[0091] According to various embodiments of the inventive concept, a dew condensation assembly of a substrate supporting unit exposed to the atmosphere may be prevented in a relatively simple configuration.

[0092] The effects of the present invention are not limited to the above-mentioned effects, and those skilled in the art can clearly understand the unmentioned effects from this specification and the accompanying drawings.

[0093] Although the preferred embodiments of the inventive concept have been illustrated and described so far, the inventive concept is not limited to the specific embodiments described above, and it should be noted that those skilled in the art to which the inventive concept belongs can implement the inventive concept in various ways without departing from the essence of the inventive concept claimed in the scope of the patent application, and the modifications should not be interpreted separately from the technical spirit or prospects of the inventive concept.

[0094] Explanation of symbols

[0095] 10: Substrate processing equipment

[0096] 100: Process chamber

[0097] 101: Dealing with Space

[0098] 102: Exhaust hole

[0099] 130: Pad

[0100] 140: Window

[0101] 151: Exhaust line

[0102] 200: Substrate support unit

[0103] 220: Dielectric board

[0104] 221: First supply channel

[0105] 223: Electrostatic Electrode

[0106] 223a: First Power Source

[0107] 223b: Switch

[0108] 223c: First power line

[0109] 225: Heater

[0110] 225a: Second power supply

[0111] 225c: Second power cord

[0112] 230: Electrode plate

[0113] 231: First loop channel

[0114] 231a: Heat transfer medium storage device

[0115] 231b: Heat transfer medium supply pipeline

[0116] 232: Second loop channel

[0117] 232a: Coolant storage device

[0118] 232b: Cooler

[0119] 232c: Coolant supply line

[0120] 233: Second supply channel

[0121] 235a: Third power supply

[0122] 235c, 236c, 237c, 238c: Third power line

[0123] 236: Adhesive

[0124] 240: Focus ring

[0125] 240a: Outer side

[0126] 240b: Inside

[0127] 250: Base plate

[0128] 253: Connecting parts

[0129] 255: Space

[0130] 270, 1270, 2270: Insulator plate

[0131] 271, 276: Edge

[0132] 272, 277: Inner surface

[0133] 273, 1273: First gap

[0134] 275: Hole

[0135] 278, 2278: Second gap

[0136] 280, 1280, 2280: Supply pipe

[0137] 281: Top

[0138] 282: First distribution hole

[0139] 284: Side surface

[0140] 284a: Part of the area

[0141] 285: Second distribution hole

[0142] 285a: Low humidity gas storage device

[0143] 285b: Low humidity gas supply line

[0144] 286: The third distribution hole

[0145] 300: Plasma generation unit

[0146] 310: RF Power

[0147] 320: Waveguide

[0148] 330: Antenna

[0149] 400: Gas supply unit

[0150] 410: Gas supply nozzle

[0151] 420: Gas supply line

[0152] 421: Valve

[0153] 430: Gas storage device

[0154] 500: Baffle unit

[0155] 510: Bezel

[0156] 511: Through hole

[0157] A: Partial

[0158] D1, D2: Maximum diameter

[0159] d1, d2, d3: diameter

[0160] ESC: Electrostatic Chuck

[0161] G1: Interval

[0162] S10, S20, S30, S40: Steps

[0163] W: wafer.

Claims

1. A substrate processing device, comprising: a process chamber configured to form a processing space; a gas supply unit configured to supply a process gas to the interior of the process chamber; a plasma generating unit configured to generate plasma from the process gas introduced into the interior of the process chamber; as well as a substrate supporting unit disposed in the processing space and configured to support a substrate, The substrate supporting unit comprises: First board; as well as a second plate adjacent to the first plate, and wherein a gap is formed between the first plate and the second plate, and the supply pipe is configured to supply gas into a space defined by the gap, wherein a partial area of ​​the side surface forming the supply pipe is configured to be exposed to the gap, and one or more distribution holes are formed in the partial area, The gas is a low-humidity gas.

2. The substrate processing apparatus of claim 1, wherein the first plate comprises: a dielectric plate embedded with an electrostatic electrode configured to adsorb a supported substrate using an electrostatic force; as well as an electrode plate disposed below the dielectric plate and configured to receive power for generating the plasma, and The second plate is an insulator plate arranged below the first plate.

3. The substrate processing apparatus according to claim 1, wherein the substrate supporting unit further comprises: a dielectric plate embedded with an electrostatic electrode configured to adsorb a supported substrate using an electrostatic force; as well as an electrode plate disposed below the dielectric plate and configured to receive power for generating the plasma, The first plate is an insulator plate disposed below the electrode plate, and The second plate is a bottom plate arranged below the insulator plate.

4. The substrate processing apparatus according to claim 3, wherein a gap is formed between the electrode plate and the insulator plate, and The supply pipe supplies the gas to any one or more of the gap between the electrode plate and the insulator plate and the gap between the insulator plate and the bottom plate. 5 . The substrate processing apparatus of claim 4 , wherein a partial area of ​​a side surface forming the supply pipe is configured to be exposed to the gap between the insulator plate and the bottom plate. 6 . The substrate processing apparatus of claim 1 , wherein the gap is defined by a step formed in an insulator plate. 7 . The substrate processing apparatus of claim 1 , wherein the gap is defined by a groove formed in any one or more of the first plate or the second plate. 8 . The substrate processing apparatus of claim 7 , wherein when viewing the groove from the top, a maximum diameter of the groove is equal to or greater than a diameter of a wafer.

9. The substrate processing apparatus of claim 1, wherein the gas is dry air or an inert gas. 10 . The substrate processing apparatus of claim 1 , wherein the substrate processing apparatus processes the substrate by using extremely low temperature plasma.

11. A substrate supporting unit for supporting a substrate, the substrate supporting unit comprising: upper plate; as well as a lower plate, disposed below the upper plate, wherein a gap is formed between the upper plate and the lower plate, and wherein the substrate supporting unit further includes a supply pipe configured to supply a gas into a space formed by the gap while passing through the lower plate, wherein a partial area of ​​the side surface forming the supply pipe is configured to be exposed to the gap, and one or more distribution holes are formed in the partial area, The gas is a low-humidity gas.

12. The substrate supporting unit of claim 11, wherein the upper plate comprises: a dielectric plate embedded with an electrostatic electrode configured to adsorb a supported substrate using an electrostatic force; as well as an electrode plate disposed below the dielectric plate and configured to receive power for generating plasma, and The lower plate is an insulator plate.

13. The substrate supporting unit of claim 11, further comprising: a dielectric plate embedded with an electrostatic electrode configured to adsorb a supported substrate using an electrostatic force; as well as an electrode plate disposed below the dielectric plate and configured to receive power for generating plasma, The upper plate is an insulator plate disposed below the electrode plate, and The lower plate is a bottom plate.

14. The substrate supporting unit of claim 13, wherein a gap is formed between the electrode plate and the insulator plate, and The supply pipe supplies the gas to any one or more of the gap between the electrode plate and the insulator plate and the gap between the insulator plate and the bottom plate. 15 . The substrate supporting unit of claim 14 , wherein the supply pipe has one or more distribution holes on a side surface exposed to the gap between the insulator plate and the bottom plate.

16. The substrate supporting unit of claim 12 or 13, wherein the gap is defined by a groove formed in the insulator plate. 17 . The substrate supporting unit of claim 12 , wherein the gap is defined by a groove formed on any one or more of a lower surface of the upper plate and an upper surface of the lower plate.

18. The substrate supporting unit of claim 12 or 13, wherein the electrode plate has a channel through which a coolant flows.

19. A substrate processing apparatus for processing a substrate by using plasma, the substrate processing apparatus comprising: a process chamber configured to form a processing space; a gas supply unit configured to supply a process gas to the interior of the process chamber; a plasma generating unit configured to generate plasma from the process gas introduced into the interior of the process chamber; as well as a substrate supporting unit disposed in the processing space and configured to support a substrate, The substrate supporting unit comprises: a dielectric plate embedded with an electrostatic electrode configured to adsorb the substrate; an electrode plate disposed below the dielectric plate and having a channel in an interior of the electrode plate for a coolant to flow through; an annular focusing ring disposed at the circumference of the dielectric plate; an insulator plate disposed below the electrode plate and formed of an insulator; and a bottom plate, disposed below the insulator plate and grounded, wherein a gap is formed at any one or more of the positions between the electrode plate and the insulator plate and between the insulator plate and the bottom plate, and wherein the gap includes a supply pipe configured to supply dry air or an inert gas, the dry air or the inert gas being supplied to an inner space formed in the bottom plate, A partial region of a side surface forming the supply pipe is configured to be exposed to the gap, and one or more distribution holes are formed in the partial region.

20. The substrate processing apparatus of claim 19, wherein the gap further comprises: a first gap formed between the electrode plate and the insulator plate; as well as A second gap is formed between the insulator plate and the bottom plate, The upper end of the supply pipe is positioned in the first gap, and a partial area of ​​a side surface forming the supply pipe is exposed to the second gap.

Images