Process chambers, semiconductor process apparatuses, and semiconductor process methods

Abstract

This invention provides a process chamber for semiconductor process equipment, including a transfer chamber and multiple reaction chambers located above the transfer chamber. The reaction chambers are all connected to the transfer chamber through bottom openings. Multiple bases within the process chamber can be raised and lowered between the reaction chambers and the transfer chamber. The chamber also includes a transfer mechanism and a support mechanism mounted on the bottom wall of the transfer chamber. The transfer mechanism is used to transfer wafers from outside the process chamber to the support mechanism or the multiple bases, and to transfer wafers from the multiple bases out of the process chamber. The support mechanism is used to support multiple wafers and, after the transfer mechanism removes wafers from the multiple bases, transfers the multiple wafers it supports to the multiple bases. In this invention, the transfer mechanism can first transfer the next batch of wafers to the support mechanism, and the support mechanism transfers the wafers it supports to the bases after the semiconductor process is completed, saving wafer transfer time. This invention also provides semiconductor process equipment and a semiconductor process method.

Description

Technical Field

[0001] This invention relates to the field of semiconductor process equipment, and more specifically, to a process chamber, a semiconductor process apparatus including the process chamber, and a semiconductor process method implemented through the process chamber. Background Technology

[0002] In recent years, with the rapid development of the semiconductor industry, the miniaturization trend of electronic components has become increasingly apparent, leading to a growing demand for material processing at the atomic scale. Atomic Layer Deposition (ALD) technology, especially Plasma Enhanced Atomic Layer Deposition (PEALD), has become a subject of increasing interest. AALD technology requires multiple reactive gases to enter the chamber sequentially and continuously, maintaining independent gaseous states before entering the chamber. This ensures the deposition of a film of a predetermined thickness within the reaction chamber, thereby obtaining a thin film with the required performance.

[0003] Existing atomic layer deposition (PALD) equipment mainly includes a front-end module, a transfer platform, and a process chamber. The transfer platform is equipped with a robotic arm for transferring wafers between the front-end module and the process chamber. As PALD process capacity demands increase, to improve equipment throughput, the process chamber can adopt a multi-chamber structure. This means that multiple reaction chambers are set up within the same process chamber, allowing for simultaneous loading of wafers, gas intake, and pressure control within multiple reaction chambers. This ensures the independence of each reaction chamber while improving wafer processing efficiency.

[0004] However, the robotic arms configured in the transfer platform were originally used in conjunction with single-chamber process chambers. The existing robotic arms' wafer transfer efficiency is far from meeting the process requirements of multi-chamber structures, becoming a new technical bottleneck for improving the production capacity of existing atomic layer deposition equipment. Summary of the Invention

[0005] The present invention aims to provide a process chamber, semiconductor process equipment, and semiconductor process method, which can save wafer transfer time and increase machine capacity.

[0006] To achieve the above objectives, the present invention provides a process chamber for semiconductor process equipment, comprising a transfer chamber and a plurality of reaction chambers located above the transfer chamber. The plurality of reaction chambers are connected to the transfer chamber through bottom openings. The process chamber is provided with a plurality of bases for supporting wafers, the positions of which correspond one-to-one with the positions of the reaction chambers. These bases can be raised and lowered between the reaction chambers and the transfer chamber to close or open the bottom openings. The process chamber further includes a transfer mechanism and a support mechanism disposed on the bottom wall of the transfer chamber. The transfer mechanism is used to transfer wafers from outside the process chamber to the support mechanism or the plurality of bases, and to transfer wafers from the plurality of bases out of the process chamber. The support mechanism is used to support multiple wafers and, after the transfer mechanism removes wafers from the plurality of bases, transfers the multiple wafers it supports to the plurality of bases.

[0007] Optionally, a plurality of the bases are arranged around the carrier mechanism, the carrier mechanism having a plurality of wafer carrier positions, the number of wafer carrier positions being the same as the number of bases, and the carrier mechanism being able to drive the plurality of wafer carrier positions to simultaneously approach the corresponding bases and transfer multiple wafers to the plurality of bases, and after transferring the wafers to the bases, drive the plurality of wafer carrier positions to simultaneously leave the corresponding bases.

[0008] Optionally, the carrier mechanism includes a driver, a connector, and a plurality of finger pieces. The upper surface of the finger pieces forms the wafer carrier position. The plurality of finger pieces are fixed around the connector. The driver can drive the connector to move the plurality of finger pieces up and down and rotate them around the rotation axis of the connector.

[0009] Optionally, the base has a plurality of base holes distributed around the base axis, and a plurality of support columns are provided in a corresponding manner in the plurality of base holes. The support columns are used to descend relative to the base along the base holes when the base rises, and rise together with the base after the top surface of the support column is level with the bearing surface of the base. They also support and lift the wafer on the base after the base descends to the point where the bottom end of the support column contacts the bottom wall of the transmission cavity.

[0010] The finger member has a clearance opening on the side facing the corresponding base, and when the driver drives the connector to rotate the multiple finger members to a position where the multiple finger members are located above the multiple bases in a corresponding manner, the multiple support columns on each base are located in the clearance opening of the corresponding finger member.

[0011] Optionally, the process chamber has two wafer transfer ports formed on the sidewall corresponding to the transfer chamber. The transfer mechanism is used to acquire wafers from outside the process chamber through the two wafer transfer ports and transfer the wafers out of the process chamber through the two wafer transfer ports.

[0012] Optionally, the process chamber further includes multiple sealing rings, each corresponding to one of the bases. The sealing rings are circumferentially fitted onto the sidewalls of the bases, and the sealing rings can seal the bottom opening of the reaction chamber when the base rises to the corresponding reaction chamber.

[0013] Optionally, the top wall of the transmission cavity is formed with multiple sets of annular sealing grooves corresponding one-to-one with the bottom openings of the multiple reaction chambers. The multiple annular sealing grooves in each set are concentric and surround the corresponding bottom opening. The sealing ring has an annular positioning surface facing the top wall of the transmission cavity. Multiple concentric annular protrusions are formed on the annular positioning surface. The multiple annular protrusions correspond one-to-one with the multiple annular sealing grooves. When the base rises to the reaction chamber, the annular protrusions at least partially enter the corresponding annular sealing grooves.

[0014] Optionally, the transmission mechanism includes a drive unit, a finger unit, and multiple swing arm units. The multiple swing arm units are sequentially connected between the drive unit and the finger unit. The multiple swing arm units are hinged to each other and to the drive unit and the finger unit. The multiple hinge axes all extend in a vertical direction. The drive unit is used to drive the finger unit and the multiple swing arm units to rotate around the corresponding hinge axes and to drive the multiple swing arm units and the finger unit to move up and down.

[0015] As a second aspect of the present invention, a semiconductor process apparatus is provided, the semiconductor process apparatus including the process chamber described above.

[0016] As a third aspect of the present invention, a semiconductor processing method is provided, applied to the aforementioned process chamber, the method comprising:

[0017] Step S1: Control the transfer mechanism to transfer the wafer outside the process chamber to the multiple bases;

[0018] Step S2: Control the multiple bases to rise into the corresponding reaction chambers and perform semiconductor processes, while controlling the transfer mechanism to transfer the wafers outside the process chambers to the carrier mechanism;

[0019] Step S3: After the semiconductor process is completed, control the multiple substrates to descend into the transfer cavity, and control the transfer mechanism to transfer the wafers on the multiple substrates out of the process chamber;

[0020] Step S4: Control the carrier mechanism to transfer the multiple wafers it carries to the multiple bases;

[0021] Repeat steps S2 to S4.

[0022] In the process chamber, semiconductor process equipment, and semiconductor process method provided by this invention, the process chamber is provided with a transfer mechanism and a carrier mechanism in the transfer cavity. The carrier mechanism can temporarily store wafers. When multiple bases carry wafers to the corresponding reaction chambers and perform semiconductor processes simultaneously, the transfer mechanism can first transfer the next batch of wafers from outside the process chamber to the carrier mechanism. After the semiconductor process of the previous batch of wafers is completed, the transfer mechanism will transfer the wafers out of the process chamber, and then the carrier mechanism will transfer the multiple wafers it carries to multiple bases. This saves the time that the transfer mechanism spends transferring the wafers outside the process chamber to each base sequentially between the semiconductor process steps of two adjacent batches of wafers, thereby improving the machine's productivity.

[0023] Furthermore, the transfer and positioning of wafers can be achieved by the transfer mechanism and the carrier mechanism. There is no need to set up a transfer platform with a robot arm on the outside of the process chamber. The wafer transfer port 10 of the process chamber can be directly docked with the pre-loading stage, which makes the overall structure of the semiconductor process equipment more compact, reduces the equipment footprint, and thus improves the economic efficiency of the semiconductor production line. Attached Figure Description

[0024] The accompanying drawings are provided to further illustrate the invention and form part of the specification. They are used together with the following detailed description to explain the invention, but do not constitute a limitation thereof. In the drawings:

[0025] Figure 1 This is a schematic diagram of the structure of the process chamber provided in an embodiment of the present invention;

[0026] Figure 2 This is a partially enlarged schematic diagram of the process chamber provided in an embodiment of the present invention;

[0027] Figure 3 This is a schematic diagram of the structure of the base in the process chamber provided in an embodiment of the present invention;

[0028] Figure 4 This is a schematic diagram showing the relative positions of the bearing mechanism, the transmission mechanism, and the base in the transmission cavity within the process chamber provided in this embodiment of the invention.

[0029] Figure 5 This is a partial structural schematic diagram of the transfer mechanism in the process chamber provided in an embodiment of the present invention;

[0030] Figure 6This is a schematic diagram illustrating the principle of the transfer mechanism in the process chamber of the present invention, which obtains wafers from outside the process chamber.

[0031] Figure 7 This is a schematic diagram illustrating the principle of placing a wafer on a support mechanism in a process chamber, as provided in an embodiment of the present invention.

[0032] Figure 8 This is a schematic diagram of the structure of the semiconductor process equipment provided in an embodiment of the present invention. Detailed Implementation

[0033] The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustration and explanation only and are not intended to limit the present invention.

[0034] To address the aforementioned technical problems, as one aspect of the present invention, a process chamber for use in semiconductor process equipment is provided, such as... Figure 1 , Figure 4 As shown, the process chamber includes a transfer chamber 4 and multiple reaction chambers 2 located above the transfer chamber 4. Each reaction chamber 2 communicates with the transfer chamber 4 through a bottom opening. Multiple bases 8 for supporting wafers are disposed within the process chamber. The positions of the multiple bases 8 correspond one-to-one with the positions of the multiple reaction chambers 2, and they can be raised and lowered between the reaction chambers 2 and the transfer chamber 4 to close or open the bottom openings of the corresponding reaction chambers 2. The process chamber also includes a robotic arm assembly 7, which includes a transfer mechanism 22 and a support mechanism 21 disposed on the bottom wall of the transfer chamber 4. Figure 1 (The portion of the robotic arm assembly 7 located in the transfer cavity is not shown in the diagram). The transfer mechanism 22 is used to transfer wafers from outside the process chamber to the carrier mechanism 21 or multiple bases 8, and to transfer wafers from multiple bases 8 out of the process chamber. The carrier mechanism 21 is used to carry multiple wafers, and after the transfer mechanism 22 takes away the wafers from multiple bases 8, it transfers the multiple wafers it carries to multiple bases 8.

[0035] In the existing technology, the wafer transfer function is achieved independently by the robot in the transfer platform. After the previous batch of wafers (each batch of wafers refers to multiple wafers that are processed by semiconductor technology on multiple bases at the same time) completes the semiconductor process, the robot in the transfer platform takes the wafers from the multiple bases in the process chamber in sequence and then transfers the next batch of wafers into the process chamber and places them on each base.

[0036] In this invention, the transmission cavity 4 is equipped with a transmission mechanism 22 and a carrier mechanism 21. The carrier mechanism 21 can temporarily store the wafers 3 to be processed. Thus, when multiple bases 8 carry the wafers 3 to the corresponding reaction cavities 2 and perform semiconductor processes simultaneously, the transmission mechanism 22 can first transfer the next batch of wafers from outside the process cavity to the carrier mechanism 21. After the semiconductor process of the previous batch of wafers 3 is completed, the transmission mechanism 22 transfers the processed wafers 3 out of the process cavity, and then the carrier mechanism 21 transfers the multiple wafers it carries to multiple bases 8. This saves the time between the semiconductor process steps of two adjacent batches of wafers 3, which is equivalent to adjusting the operation time of the transmission mechanism 22 to transfer the next batch of wafers into the process cavity and perform positioning to overlap with the time of the semiconductor process of the previous batch of wafers, thereby improving the machine's productivity.

[0037] Furthermore, the transfer and positioning of the wafer can be achieved by the transfer mechanism 22 and the carrier mechanism 21, so there is no need to set up a transfer platform with a robot arm outside the process chamber. The wafer transfer port 10 of the process chamber can be directly connected to the pre-loading stage (Loadlock, which is used to evacuate its own chamber to (close to) vacuum after receiving the wafer, so that after communicating with the process chamber and performing the wafer transfer operation, there is no need to perform a vacuum operation on the process chamber again. It can also have functions such as wafer integrity detection). This makes the overall structure of the semiconductor process equipment more compact, reduces the equipment footprint, and improves the economic efficiency of the semiconductor production line.

[0038] As an optional embodiment of the present invention, such as Figure 1 , Figure 2 As shown, the process chamber includes an upper cover 1, an upper cavity 210, and a lower cavity 410 stacked along the height direction. Multiple reaction chambers 2 are formed in the upper cavity 210, and a transfer cavity 4 is formed in the lower cavity 410. The upper cover 1 closes the top openings formed by the multiple reaction chambers 2 at the top of the upper cavity 210. Optionally, the upper cavity 210 also has multiple exhaust passages surrounding each reaction chamber 2. Exhaust assemblies are installed in the exhaust passages, and these exhaust assemblies communicate with the corresponding reaction chamber 2 through multiple circumferentially distributed exhaust holes to extract exhaust gas from the reaction chamber 2 and discharge it from the process chamber.

[0039] As an optional embodiment of the present invention, the process chamber includes four reaction chambers 2.

[0040] To improve the wafer transfer efficiency of the carrier mechanism 21 in transferring wafers 3 to multiple bases 8, in a preferred embodiment of the present invention, the number of wafers 3 that the carrier mechanism 21 can carry is the same as the number of bases 8, and the carrier mechanism 21 can simultaneously transfer wafers 3 to multiple bases 8. Specifically, as shown in the figure... Figure 4 , Figure 6As shown, multiple bases 8 (e.g., including a first base 25, a second base 23, a third base 24, and a fourth base 26) are arranged around the carrier mechanism 21. The carrier mechanism 21 has multiple wafer carrier positions, the number of which is the same as the number of bases 8. The carrier mechanism 21 can drive multiple wafer carrier positions to simultaneously approach the corresponding bases 8 and transfer multiple wafers to the multiple bases 8. After transferring the wafers to the bases 8, it can also drive multiple wafer carrier positions to simultaneously leave the corresponding bases 8.

[0041] As an optional embodiment of the present invention, the support mechanism 21 drives multiple wafer support positions to synchronously move closer to or further away from each base 8 by rotation. Specifically, as shown in the figure... Figure 4 , Figure 6 As shown, the carrier mechanism 21 includes a driver (located below the connector in the view of the figure, not shown), a connector, and multiple finger pieces (e.g., finger piece 211, finger piece 212, finger piece 213, and finger piece 214). The upper surface of the finger piece forms a wafer carrier position. The multiple finger pieces are fixed around the connector. The driver can drive the connector to move the multiple finger pieces up and down and rotate around the rotation axis of the connector, so that the multiple finger pieces can simultaneously approach the corresponding base 8 and synchronously transfer the wafer to the corresponding base 8, or after transferring the wafer to the base 8, the multiple finger pieces can simultaneously leave the corresponding base 8.

[0042] To save space in the process chamber, in a preferred embodiment of the present invention, the driver can be located outside the process chamber and connected to the connector via a drive shaft passing through a through hole in the bottom wall of the transmission chamber.

[0043] To improve the smoothness of the transfer of wafer 3 between the base 8, the fingers, and the transfer mechanism 22, as a preferred embodiment of the present invention, such as... Figure 4 As shown, the base 8 has multiple base holes distributed around the axis of the base 8. Multiple support columns 11 are arranged in the multiple base holes one by one. The support columns 11 are used to descend relative to the base 8 along the base holes when the base 8 rises, and rise together with the base 8 after the top surface of the support column 11 is level with the bearing surface of the base 8. After the base 8 descends to the point where the bottom end of the support column 11 contacts the bottom wall of the transmission cavity 4, it supports and lifts the wafer on the base 8.

[0044] That is, when the finger or transfer mechanism 22 is transferring the wafer to the base 8, the base 8 is in a low position, and the top of the support column 11 extends above the bearing surface of the base 8. Thus, the finger or transfer mechanism 22 first carries the wafer and moves it above the support column 11, and then lowers its height so that the wafer 3 falls on the corresponding multiple support columns 11 of the base 8. Then, the finger or transfer mechanism 22 is removed horizontally. As the base 8 rises, the support column 11 assembly retracts to the top and is level with the bearing surface of the base 8, so that the wafer 3 falls smoothly on the bearing surface of the base 8.

[0045] To improve wafer positioning stability, as a preferred embodiment of the present invention, such as... Figure 4 , Figure 6 As shown, the finger member has a clearance opening on the side facing the corresponding base 8, and when the driver drives the connector to rotate the multiple finger members until the multiple finger members are positioned one-to-one above the multiple bases 8, the multiple support posts 11 on each base 8 are located in the clearance opening of the corresponding finger member. Preferably, as shown... Figure 4 , Figure 6 As shown, the finger can be formed in a hook shape to reduce the contact area between the finger and the wafer 3. The opening of the hook-shaped finger is the clearance opening.

[0046] In this embodiment of the invention, the finger has a clearance opening on the side facing the corresponding base 8, so that when the wafer 3 is transferred to the base 8, the finger will be radially offset from the multiple support pillars 11 on the base 8, avoiding scratching and collision between the finger and the support pillars 11, and improving the safety and positional stability of the wafer.

[0047] Specifically, such as Figure 4 , Figure 6 As shown, taking an example where the clearance openings of multiple finger components all face clockwise:

[0048] After the transmission mechanism 22 removes the wafers from the multiple bases 8, the driver drives the connector to raise and lower the multiple finger pieces and the wafers 3 they carry to a height above the support column 11 on the base 8. Then, the driver drives the connector to rotate the multiple finger pieces clockwise until the wafers 3 on the multiple finger pieces are all aligned vertically with the corresponding bases 8. At this time, finger piece 211 is located above the first base 25, finger piece 212 is located above the second base 23, finger piece 213 is located above the third base 24, and finger piece 214 is located above the fourth base 26.

[0049] Subsequently, the driver drives the connector to lower multiple finger pieces to a height lower than the top of the multiple support pillars 11 and higher than the bearing surface of the base 8, so that the wafer falls onto the support pillars 11. That is, the wafer 3 carried by the finger piece 211 falls onto the support pillar 11 of the first base 25, the wafer 3 carried by the finger piece 212 falls onto the support pillar 11 of the second base 23, the wafer 3 carried by the finger piece 213 falls onto the support pillar 11 of the third base 24, and the wafer 3 carried by the finger piece 214 falls onto the support pillar 11 of the fourth base 26;

[0050] Finally, the driver drives the connector to rotate multiple finger pieces counterclockwise, causing the multiple finger pieces to leave the corresponding base 8 synchronously, thus completing the wafer handover operation.

[0051] As an optional embodiment of the present invention, such as Figure 5 As shown, the transmission mechanism 22 includes a drive unit (not shown), a finger unit 221, and multiple swing arm units. The multiple swing arm units are sequentially connected between the drive unit and the finger unit 221. The multiple swing arm units are hinged to each other and to the drive unit and the finger unit 221. The multiple hinge axes all extend in the vertical direction. The drive unit is used to drive the finger unit 221 and the multiple swing arm units to rotate around the corresponding hinge axes and to drive the multiple swing arm units and the finger unit 221 to move up and down.

[0052] To save space inside the process chamber, in a preferred embodiment of the present invention, the drive unit can be located outside the process chamber and connected to the swing arm unit via a drive shaft passing through a through hole in the bottom wall of the transmission chamber. In some embodiments of the present invention, the structure in the driver of the bearing mechanism 21 that drives the connecting member to raise and lower multiple finger pieces can be integrated with the drive unit of the transmission mechanism 22 into the same structure.

[0053] In this embodiment of the invention, the driving unit is used to control the height of the finger part 221. At the same time, the horizontal position and orientation of the finger part 221 can be controlled by adjusting the hinge angle between multiple swing arms and between the swing arms and the driving unit and the finger part 221. This controls the finger part 221 to carry the wafer sequentially to the top of the support column 11 of the finger member or the base 8, and controls the finger part 221 to descend so that the wafer 3 lands on the corresponding support column 11 of the finger member or the base 8. Then, the finger part 221 is controlled to withdraw horizontally, thereby realizing the wafer handover operation.

[0054] As an optional embodiment of the present invention, such as Figure 5As shown, the transmission mechanism 22 includes two swing arm parts: a first swing arm part 222 and a second swing arm part 223. The first end of the first swing arm part 222 is hinged to the tail end of the finger part 221, the second end of the first swing arm part 222 is hinged to the first end of the second swing arm part 223, and the second end of the second swing arm part 223 is hinged to the output shaft of the drive part. The rotation angle of each hinge position can be automatically adjusted by the corresponding drive structure to change the posture of the transmission mechanism 22.

[0055] For example, 6. Figure 7 The diagram shows the process by which the transmission mechanism 22 drives the finger section 221 to upload the piece to the finger component. Preferably, as shown... Figure 7 As shown, during wafer transfer, the head of the finger part 221 faces the clearance opening of the corresponding finger component to avoid the finger part 221 scraping or colliding with the finger component during the lifting and lowering process, thereby improving the safety and positional stability of the wafer.

[0056] To improve the chip transmission efficiency of the transmission mechanism 22, as a preferred embodiment of the present invention, such as... Figure 4 , Figure 6 , Figure 7 As shown, two wafer transfer ports 10 are formed on the side wall of the process chamber corresponding to the transfer chamber 4. The transfer mechanism 22 is used to obtain wafers from outside the process chamber through the two wafer transfer ports 10 and transfer the wafers out of the process chamber through the two wafer transfer ports 10.

[0057] To improve the sealing performance of each reaction chamber 2, as a preferred embodiment of the present invention, such as... Figures 1 to 3 As shown, the process chamber also includes multiple sealing rings 9, which correspond one-to-one with multiple bases 8. The sealing rings 9 are circumferentially sleeved on the side walls of the corresponding bases 8, and the sealing rings 9 can seal the bottom opening of the corresponding reaction chamber 2 when the base 8 rises to the corresponding reaction chamber 2.

[0058] In this embodiment of the invention, a sealing ring 9 is fitted on the side wall of each base 8. When each base 8 rises to the corresponding reaction chamber 2, the bottom opening of the corresponding reaction chamber 2 is closed by the base 8 and the sealing ring 9, forming an independent process environment for the reaction chamber 2. Thus, according to process requirements, it is possible not only to realize two or more processes in a single process chamber (i.e., wafers in multiple reaction chambers 2 undergo different processes), but also to simultaneously perform the same process on multiple wafers in a single process chamber (i.e., wafers in multiple reaction chambers 2 undergo the same process), further improving the machine's production capacity.

[0059] To further improve the sealing performance of each reaction chamber 2, as a preferred embodiment of the present invention, such as... Figures 1 to 3As shown, the top wall of the transmission cavity 4 has multiple sets of annular sealing grooves 201 that correspond one-to-one with the bottom openings of multiple reaction cavities 2. The multiple annular sealing grooves 201 in each set are concentric and arranged around the corresponding bottom opening. The sealing ring 9 has an annular positioning surface facing the top wall of the transmission cavity 4. Multiple concentric annular protrusions 901 are formed on the annular positioning surface. The multiple annular protrusions 901 correspond one-to-one with the multiple annular sealing grooves 201. When the base 8 rises to the reaction cavity 2, the annular protrusions 901 at least partially enter the corresponding annular sealing grooves 201.

[0060] In this embodiment of the invention, as the base 8 rises into the corresponding reaction chamber 2, the multiple annular protrusions 901 on the sealing ring 9 also enter the corresponding annular sealing grooves 201, thereby forming a labyrinth seal structure between the annular positioning surface of the sealing ring 9 and the top wall of the transmission chamber 4, further improving the sealing performance of each reaction chamber 2. In some embodiments of the invention, the height of the annular protrusions 901 on the sealing ring 9 is different from the depth of the annular sealing grooves 201 (for example, the height of the annular protrusions 901 is less than the depth of the annular sealing grooves 201 to ensure that the annular positioning surface of the sealing ring 9 contacts the top wall of the transmission chamber 4), so as to ensure the effect of the mechanical seal.

[0061] To improve the stability of the axial relative position between the sealing ring 9 and the base 8, and to further improve the sealing performance of each reaction chamber 2, as a preferred embodiment of the present invention, such as... Figures 1 to 3 As shown, the top of the inner wall of the sealing ring 9 has an inner protrusion, the upper surface of which is flush with the top end face of the sealing ring 9. The top of the base 8 has an annular positioning groove surrounding the bearing surface of the base 8, and the inner protrusion is disposed in the annular positioning groove, with its upper surface flush with the bearing surface of the base 8. The bottom of the outer wall of the sealing ring 9 has an outer protrusion, and an annular positioning surface is formed on the outer protrusion.

[0062] In this embodiment of the invention, the top end of the sealing ring 9 overlaps the top of the base 8 via an inner convex edge, and the bottom end contacts the top wall of the transmission cavity 4 via an outer convex edge, thereby allowing the lifting device (e.g., such as...) below the base 8 to... Figure 1 As shown, when the motor 5 drives the base 8 to rise into the reaction chamber 2 through the support shaft, the sealing ring 9 can maintain the axial relative position with the base 8 through the cooperation between the inner convex edge and the annular positioning groove, and then accurately position the height of the base 8 through the inner convex edge and outer convex edge structure.

[0063] As an optional embodiment of the present invention, the top of the support column 11 has a limiting head, the side of which is a tapered limiting surface that narrows from top to bottom. The top of the base hole has a corresponding tapered section. The diameter of the base hole gradually narrows from the bearing surface of the base 8 downwards in the tapered section. After the top surface of the support column 11 (i.e. the top surface of the limiting head) is level with the bearing surface of the base 8, the tapered limiting surface of the limiting head contacts the inner wall of the tapered section of the base hole, so that the base 8 can drive the support column 11 to rise together.

[0064] To improve the cleanliness of the transfer chamber 4, in a preferred embodiment of the present invention, the process chamber further includes a gas pipeline 6. Each of the multiple reaction chambers 2 is equipped with a first process gauge, and the transfer chamber 4 is equipped with a second process gauge. The control device of the semiconductor process equipment can detect and compare the gas pressure in the reaction chamber 2 and the transfer chamber 4 using the first and second process gauges. Based on the comparison result, it controls the flow of gas through the gas pipeline 6, ensuring that the gas pressure in the transfer chamber 4 is greater than the gas pressure in each reaction chamber 2. This prevents the process gas in the reaction chamber 2 from flowing into the transfer chamber 4 through the labyrinth seal structure formed between the annular positioning surface of the sealing ring 9 and the top wall of the transfer chamber 4, or through the gap between the support column 11 and the base hole. This eliminates particulate sources in the transfer chamber 4, improves the cleanliness of the transfer chamber 4, and also ensures that each reaction chamber 2 is always in an independent process environment during the semiconductor process.

[0065] As a second aspect of the present invention, a semiconductor process apparatus is provided, the semiconductor process apparatus including the process chamber provided in the embodiments of the present invention.

[0066] In the semiconductor process equipment provided by the present invention, the transfer cavity 4 is provided with a transfer mechanism 22 and a carrier mechanism 21. The carrier mechanism 21 can temporarily store the wafers 3 to be processed. Thus, when multiple bases 8 carry the wafers 3 to rise to the corresponding reaction cavities 2 and perform semiconductor processes simultaneously, the transfer mechanism 22 can first transfer the next batch of wafers from outside the process cavity to the carrier mechanism 21. After the semiconductor process of the previous batch of wafers 3 is completed, the transfer mechanism 22 will transfer the processed wafers 3 out of the process cavity, and then the carrier mechanism 21 will transfer the multiple wafers it carries to multiple bases 8. This saves the time between the steps of semiconductor processing of two adjacent batches of wafers 3, in which the transfer mechanism 22 sequentially transfers the wafers outside the process cavity to each base 8, thereby improving the machine's productivity.

[0067] Furthermore, the transfer and positioning of the wafer can both be achieved by the transfer mechanism 22 and the carrier mechanism 21, thus eliminating the need for a transfer platform with a robotic arm outside the process chamber. As a preferred embodiment of the present invention, such as... Figure 8As shown, the wafer transfer port 10 of the process chamber can be directly connected to the pre-loading stage 42 (Loadlock), which makes the overall structure of the semiconductor process equipment more compact, reduces the equipment footprint, and thus improves the economic efficiency of the semiconductor production line.

[0068] As an optional embodiment of the present invention, such as Figure 8 As shown, the semiconductor process equipment also includes a front-end module 43 and multiple loading stages 44. The front-end module 43 is equipped with a robotic arm, which is used to remove wafers from wafer storage devices (e.g., wafer cassettes) on the loading stages 44 to a pre-loading stage 42 in an atmospheric environment, or to transfer wafers from the pre-loading stage 42 back to the wafer storage devices on the loading stages 44. The pre-loading stage 42 is used to evacuate its chamber to (near) vacuum after receiving the wafer, so that the transfer mechanism 22 in the transfer cavity 4 can pick up the wafer in a (near) vacuum environment; it is also used to restore atmospheric pressure after receiving the wafer transferred from the transfer mechanism 22, so that the robotic arm of the front-end module 43 can remove the wafer.

[0069] To improve transfer efficiency, as a preferred embodiment of the present invention, such as... Figure 4 , Figure 6 , Figure 7 , Figure 8 As shown, two wafer transfer ports 10 are formed on the side wall of the process chamber corresponding to the transfer chamber 4. Two preloading stages 42 are arranged on the outside of the process chamber corresponding to the positions of the two wafer transfer ports 10. The transfer mechanism 22 is used to obtain wafers from the two preloading stages 42 through the two wafer transfer ports 10 and transfer the wafers to the two preloading stages 42 through the two wafer transfer ports 10.

[0070] As a third aspect of the present invention, a semiconductor process method is provided, applied to a process chamber provided in the embodiments of the present invention, the method comprising:

[0071] Step S1: Control the transfer mechanism 22 to transfer the wafer outside the process chamber to multiple bases 8;

[0072] Step S2: Control multiple bases 8 to rise into the corresponding reaction chambers 2 and perform semiconductor processing, while controlling the transfer mechanism 22 to transfer the wafers outside the process chambers to the carrier mechanism 21.

[0073] Step S3: After the semiconductor process is completed, control the multiple bases 8 to descend into the transfer cavity 4, and control the transfer mechanism 22 to transfer the wafers on the multiple bases 8 out of the process cavity.

[0074] Step S4: Control the carrier mechanism 21 to transfer the multiple wafers it carries to multiple bases 8;

[0075] Repeat steps S2 to S4.

[0076] It should be noted that in step S1, the base 8 is located at a low position, and the support column 11 extends to the top, which is higher than the bearing surface of the base 8. When performing the semiconductor process of the last batch of wafers, only steps S2 and S3 need to be performed, and in step S2, it is not necessary to control the transfer mechanism 22 to transfer the wafers outside the process chamber to the bearing mechanism 21 (there are no next batch of wafers waiting to be transferred into the process chamber outside the process chamber).

[0077] In the semiconductor process method provided by the present invention, the wafers 3 to be processed are temporarily stored by the carrier mechanism 21. When multiple bases 8 carry the wafers 3 to rise to the corresponding reaction chambers 2 and perform semiconductor processes simultaneously, the transfer mechanism 22 can first transfer the next batch of wafers from outside the process chamber to the carrier mechanism 21. After the semiconductor process of the previous batch of wafers 3 is completed, the transfer mechanism 22 transfers the processed wafers 3 out of the process chamber, and then the carrier mechanism 21 transfers the multiple wafers it carries to multiple bases 8. This saves the time between the semiconductor process steps of two adjacent batches of wafers 3, which is used to transfer the wafers outside the process chamber to each base 8 in sequence, thereby improving the machine's productivity.

[0078] Furthermore, the transfer and positioning of the wafers are both achieved by the transfer mechanism 22 and the carrier mechanism 21, so there is no need to set up a transfer platform with a robot arm outside the process chamber. The wafer transfer port 10 of the process chamber can be directly connected to the pre-loading stage 42 (Loadlock), which makes the overall structure of the semiconductor process equipment more compact, reduces the equipment footprint, and improves the economic efficiency of the semiconductor production line.

[0079] When the process chamber includes four reaction chambers 2, step S1 may specifically include:

[0080] Step S11: Control the transmission mechanism 22 to correct the height so that the finger part 221 is higher than the top of the support column 11, and obtain the wafer 3 to be processed from the pre-loading stage 42 outside the process chamber. Control the multiple swing arms of the transmission mechanism 22 to swing so that the finger part 221 and the wafer carried on it move to above the support column 11 of the first base 25.

[0081] The control transmission mechanism 22 drives the finger part 221 to descend, so that the wafer 3 to be processed falls on the support post 11, and drives the finger part 221 back to the initial position (for example, between the second base 23 and the fourth base 26, in a position that does not interfere with the base 8 and the support mechanism 21).

[0082] Step S12: Control the transfer mechanism 22 to correct the height so that the finger part 221 is higher than the top of the support column 11, and obtain the wafer 3 to be processed from the pre-loading stage 42 outside the process chamber. Control the multiple swing arms of the transfer mechanism 22 to swing so that the finger part 221 and the wafer carried on it move to above the support column 11 of the second base 23.

[0083] The control transmission mechanism 22 drives the finger part 221 to descend, so that the wafer 3 to be processed falls on the support column 11, and drives the finger part 221 back to the initial position.

[0084] Step S13: Control the transmission mechanism 22 to correct the height so that the finger part 221 is higher than the top of the support column 11, and obtain the wafer 3 to be processed from the pre-loading stage 42 outside the process chamber. Control the multiple swing arms of the transmission mechanism 22 to swing so that the finger part 221 and the wafer carried on it move to above the support column 11 of the third base 24.

[0085] The control transmission mechanism 22 drives the finger part 221 to descend, so that the wafer 3 to be processed falls on the support column 11, and drives the finger part 221 back to the initial position.

[0086] Step S14: Control the transmission mechanism 22 to correct the height so that the finger part 221 is higher than the top of the support column 11, and obtain the wafer 3 to be processed from the pre-loading stage 42 outside the process chamber. Control the multiple swing arms of the transmission mechanism 22 to swing so that the finger part 221 and the wafer carried on it move to above the support column 11 of the fourth base 26.

[0087] The control transmission mechanism 22 drives the finger part 221 to descend, so that the wafer 3 to be processed falls on the support column 11, and drives the finger part 221 back to the initial position.

[0088] To prevent the bearing mechanism 21 and the transmission mechanism 22 from scratching or colliding with each other, preferably, step S1 may also include step S10, which is performed before step S11, to control the bearing mechanism 21 to correct its height so that the bearing mechanism 21 is located at the bearing position, which is higher than the highest limit position of the transmission mechanism 22.

[0089] In step S2, controlling the transfer mechanism 22 to transfer the wafer outside the process chamber to the carrier mechanism 21 may specifically include:

[0090] Step S21: Control the height of the bearing mechanism 21 to make the bearing mechanism 21 located at the transmission position, which is lower than the highest limit position of the transmission mechanism 22.

[0091] Step S22: Control the transfer mechanism 22 to correct the height, and obtain the wafer 3 to be processed (e.g., from the pre-loading stage 42 outside the process chamber) Figure 6As shown), the control transmission mechanism 22 is raised until the finger portion 221 is higher than the finger member, and the multiple swing arms of the control transmission mechanism 22 are swung, causing the finger portion 221 and the wafer it carries to move above the finger member 211 (as shown). Figure 7 (as shown);

[0092] The control transmission mechanism 22 drives the finger part 221 to descend, so that the wafer 3 to be processed falls on the finger part 211, and drives the finger part 221 back to the initial position.

[0093] Step S23: Control the transfer mechanism 22 to correct the height, obtain the wafer 3 to be processed from outside the process chamber, control the transfer mechanism 22 to rise until the finger part 221 is higher than the finger piece, and control the multiple swing arms of the transfer mechanism 22 to swing so that the finger part 221 and the wafer carried on it move above the finger piece 212.

[0094] The control transmission mechanism 22 drives the finger part 221 to descend, so that the wafer 3 to be processed falls on the finger part 212, and drives the finger part 221 back to the initial position.

[0095] Step S24: Control the transfer mechanism 22 to correct the height, obtain the wafer 3 to be processed from outside the process chamber, control the transfer mechanism 22 to rise until the finger part 221 is higher than the finger piece, and control the multiple swing arms of the transfer mechanism 22 to swing so that the finger part 221 and the wafer carried on it move above the finger piece 213.

[0096] The control transmission mechanism 22 drives the finger part 221 to descend, so that the wafer 3 to be processed falls on the finger part 213, and drives the finger part 221 back to the initial position.

[0097] Step S25: Control the transfer mechanism 22 to correct the height, obtain the wafer 3 to be processed from outside the process chamber, control the transfer mechanism 22 to rise until the finger part 221 is higher than the finger piece, and control the multiple swing arms of the transfer mechanism 22 to swing so that the finger part 221 and the wafer carried on it move above the finger piece 214.

[0098] The control transmission mechanism 22 drives the finger part 221 to descend, so that the wafer 3 to be processed falls on the finger part 214, and drives the finger part 221 back to the initial position.

[0099] Step S26: Control the bearing mechanism 21 to return to the bearing position.

[0100] To improve the safety of the semiconductor process chamber, preferably, the initial circumferential position of the support mechanism 21 is such that each finger is located between two adjacent bases 8. That is, when the process chamber includes four reaction chambers 2, the circumferential angle between two adjacent bases 8 is 90°, and the circumferential angle between the finger and the adjacent base 8 is 45°, so as to avoid collision between the base 8 and the finger during the lifting process.

[0101] To increase the movement space of the finger portion 221, preferably, step S21 further includes controlling the support mechanism 21 to drive the connecting member to rotate multiple finger pieces counterclockwise by a preset angle (e.g., 15°), thereby providing sufficient movement space for the finger portion 221 between the finger piece 211 and the first base 25 (at this time, the base 8 has been raised into the reaction chamber 2, and the finger pieces will not contact the thinner shaft structure below the base 8). Step S26 further includes controlling the support mechanism 21 to drive the connecting member to rotate multiple finger pieces clockwise by the same preset angle (i.e., restoring the circumferential position of the multiple finger pieces).

[0102] In the case where the process chamber includes four reaction chambers 2, as an optional embodiment of the present invention, step S4 specifically includes:

[0103] Step S41: Control the transmission mechanism 22 to drive the connector to rotate multiple finger pieces and the wafer 3 carried on them clockwise (45°), so that finger piece 211 is above the first base 25, finger piece 212 is above the second base 23, finger piece 213 is above the third base 24, and finger piece 214 is above the fourth base 26.

[0104] Step S42: Control the transmission mechanism 22 to drive the connector to move multiple finger pieces down to a height lower than the top of multiple support columns 11 and higher than the bearing surface of the base 8, so that the wafer 3 on the finger piece 211 falls on the support column 11 of the first base 25, the wafer 3 on the finger piece 212 falls on the support column 11 of the second base 23, the wafer 3 on the finger piece 213 falls on the support column 11 of the third base 24, and the wafer 3 on the finger piece 214 falls on the support column 11 of the fourth base 26.

[0105] Step S43: Control the transmission mechanism 22 to drive the connector to rotate multiple finger pieces counterclockwise (45°), so that the multiple finger pieces return to their initial circumferential positions, and drive the connector to raise the multiple finger pieces to the bearing position.

[0106] It is understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, and the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A process chamber for semiconductor process equipment, comprising a transfer chamber and a plurality of reaction chambers located above the transfer chamber, wherein the plurality of reaction chambers are connected to the transfer chamber through bottom openings, and the process chamber is provided with a plurality of bases for supporting wafers, wherein the positions of the plurality of bases correspond one-to-one with the plurality of reaction chambers, and the bases are movable between the reaction chambers and the transfer chambers to close or open the bottom openings, characterized in that, The process chamber further includes a transfer mechanism and a carrier mechanism disposed on the bottom wall of the transfer chamber. The transfer mechanism is used to transfer wafers from outside the process chamber to the carrier mechanism or the plurality of the bases. During the semiconductor process of a batch of wafers, the transfer mechanism is used to transfer wafers outside the process chamber to the carrier mechanism. After the semiconductor process of the batch of wafers is completed, the transfer mechanism is also used to transfer the processed wafers from the plurality of bases out of the process chamber. The carrier mechanism is used to carry multiple wafers and, after the transfer mechanism removes the wafers from the plurality of bases, is used to transfer the multiple wafers it carries to the plurality of bases.

2. The process chamber according to claim 1, characterized in that, Multiple bases are arranged around the carrier mechanism, and the carrier mechanism has multiple wafer carrier positions. The number of wafer carrier positions is the same as the number of bases. The carrier mechanism can drive multiple wafer carrier positions to simultaneously approach the corresponding bases and transfer multiple wafers to the multiple bases. After transferring the wafers to the bases, it can drive multiple wafer carrier positions to simultaneously leave the corresponding bases.

3. The process chamber according to claim 2, characterized in that, The carrier mechanism includes a driver, a connector, and multiple finger components. The upper surface of each finger component forms the wafer carrier position. The multiple finger components are fixed around the connector. The driver can drive the connector to move the multiple finger components up and down and rotate them around the axis of rotation of the connector.

4. The process chamber according to claim 3, characterized in that, The base has a plurality of base holes distributed around the base axis, and a plurality of support columns are provided in a corresponding manner in the plurality of base holes. The support columns are used to descend relative to the base along the base holes when the base rises, and rise together with the base after the top surface of the support column is level with the bearing surface of the base. They also support and lift the wafer on the base after the base descends to the point where the bottom end of the support column contacts the bottom wall of the transmission cavity. The finger member has a clearance opening on the side facing the corresponding base, and when the driver drives the connector to rotate the multiple finger members to a position where the multiple finger members are located above the multiple bases in a corresponding manner, the multiple support columns on each base are located in the clearance opening of the corresponding finger member.

5. The process chamber according to any one of claims 1 to 4, characterized in that, The process chamber has two wafer transfer ports on its sidewall corresponding to the transfer chamber. The transfer mechanism is used to acquire wafers from outside the process chamber through the two wafer transfer ports and transfer the wafers out of the process chamber through the two wafer transfer ports.

6. The process chamber according to any one of claims 1 to 4, characterized in that, The process chamber also includes multiple sealing rings, each corresponding to one of the bases. The sealing rings are circumferentially fitted onto the sidewalls of the bases, and the sealing rings can seal the bottom opening of the reaction chamber when the base rises to the corresponding reaction chamber.

7. The process chamber according to claim 6, characterized in that, The top wall of the transmission cavity is formed with multiple sets of annular sealing grooves that correspond one-to-one with the bottom openings of the multiple reaction chambers. The multiple annular sealing grooves in each set are concentric and surround the corresponding bottom opening. The sealing ring has an annular positioning surface facing the top wall of the transmission cavity. Multiple concentric annular protrusions are formed on the annular positioning surface, and the multiple annular protrusions correspond one-to-one with the multiple annular sealing grooves. When the base rises to the reaction chamber, the annular protrusion at least partially enters the corresponding annular sealing groove.

8. The process chamber according to any one of claims 1 to 4, characterized in that, The transmission mechanism includes a drive unit, a finger unit, and multiple swing rod units. The multiple swing rod units are sequentially connected between the drive unit and the finger unit. The multiple swing rod units are hinged to each other and to the drive unit and the finger unit. The multiple hinge axes all extend in a vertical direction. The drive unit is used to drive the finger unit and the multiple swing rod units to rotate around the corresponding hinge axes and to drive the multiple swing rod units and the finger unit to move up and down.

9. A semiconductor process apparatus, characterized in that, The semiconductor process equipment includes the process chamber as described in any one of claims 1 to 8.

10. A semiconductor manufacturing process, characterized in that, The method, applied to the process chamber according to any one of claims 1 to 8, comprises: Step S1: Control the transfer mechanism to transfer the wafer outside the process chamber to the multiple bases; Step S2: Control the multiple bases to rise into the corresponding reaction chambers and perform semiconductor processes, while controlling the transfer mechanism to transfer the wafers outside the process chambers to the carrier mechanism; Step S3: After the semiconductor process is completed, control the multiple substrates to descend into the transfer cavity, and control the transfer mechanism to transfer the wafers on the multiple substrates out of the process chamber; Step S4: Control the carrier mechanism to transfer the multiple wafers it carries to the multiple bases; Repeat steps S2 to S4.

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