Seamless electrical conduit

Abstract

Embodiments of the present disclosure generally relate to a unified electrical conduit comprising a center conductor, a socket coupled to a first end of the center conductor, a male connector coupled to a second end of the center conductor, a dielectric jacket surrounding the center conductor, and an outer conductor surrounding the dielectric jacket, wherein a substantially 90 degree bend is formed along its length.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to apparatus and methods utilized in the fabrication of semiconductor devices. More particularly, embodiments of the present disclosure relate to electrical conduits for providing power to an electrostatic chuck in a substrate processing chamber used to form semiconductor devices. Background Art

[0002] Integrated circuits have evolved into complex devices that can include millions of transistors, capacitors, and resistors on a single chip. This evolution in chip design has continuously driven faster circuits and greater circuit density. The demand for faster circuits with greater circuit density places corresponding demands on the materials used to fabricate these integrated circuits.

[0003] The demand for greater integrated circuit density also places demands on the processes used in the manufacture of integrated circuit components. For example, in processes using an electrostatic chuck in which radio frequency (RF) electrodes are mounted to facilitate plasma generation in a chamber, the electrical conductors that provide RF power to the electrodes in the electrostatic chuck tend to function properly only when low RF power is applied. When higher RF power is applied to conventional electrical conductors, arcing can occur.

[0004] Therefore, there is a need in the art for improved methods and apparatus for providing power to an electrical conduit of a chuck. Summary of the Invention

[0005] Embodiments of the present disclosure generally relate to apparatus and methods utilized in the fabrication of semiconductor devices. More particularly, embodiments of the present disclosure relate to electrical conduits for providing power to an electrostatic chuck in a substrate processing chamber.

[0006] In one embodiment, a unified electrical conduit is provided, comprising: a center conductor; a socket coupled to a first end of the center conductor; a male connector coupled to a second end of the center conductor; a dielectric jacket surrounding the center conductor; and an outer conductor surrounding the dielectric jacket, wherein a substantially 90-degree bend is formed along its length.

[0007] In another embodiment, a chamber is provided, comprising: a chamber body defining a processing volume; a substrate support movably disposed within the processing volume; and a unified electrical conduit coupled to the substrate support. The unified electrical conduit comprises: a center conductor; a dielectric sheath surrounding the center conductor; and an outer conductor surrounding the dielectric sheath, wherein a substantially 90-degree bend is formed along the length of the outer conductor.

[0008] In another embodiment, a method for forming a uniform electrical conduit is provided. The method includes forming a straight article, comprising: providing a first tube made of a conductive material; installing a dielectric jacket around a periphery of the first tube; providing a second tube made of a conductive material to surround an outer surface of the dielectric jacket; and forming a bend in the straight article, wherein the bend is substantially 90 degrees. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] In this manner, a more particular description of the disclosure, briefly summarized above, may be obtained by reference to the embodiments, certain of which are illustrated in the accompanying drawings. It should be understood, however, that the drawings illustrate only typical embodiments of the disclosure and are therefore not to be considered limiting of its scope, as the disclosure admits to other equally effective embodiments.

[0010] Figure 1 A schematic side cross-sectional view of a processing chamber is shown.

[0011] Figure 2A and Figure 2B A schematic cross-sectional view of a solenoid.

[0012] Figure 3A for Figure 2A An enlarged cross-sectional view of a first end of an electrical conduit.

[0013] Figure 3B for Figure 2A A cross-sectional view of the second end of the electrical conduit.

[0014] Figure 4 for Figure 2A An enlarged cross-sectional view of a portion of an electrostatic chuck.

[0015] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is understood that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION

[0016] Embodiments of the present disclosure relate to substrate processing chambers utilized in substrate processing in the manufacture of electronic devices. Substrate processes include deposition processes, etching processes, and other low-pressure processes, plasma processes, and thermal processes for manufacturing electronic devices on substrates. Examples of processing chambers and / or systems that may benefit from exemplary aspects of the present disclosure are commercially available from Applied Materials, Inc., located in Santa Clara, California, USA. APF TM PECVD System. It is contemplated that other processing chambers and / or processing platforms, including those from other manufacturers, may be adapted to benefit from aspects of the present disclosure.

[0017] Embodiments of the deposition chamber disclosed herein can be used in the manufacture of memory devices, and more specifically, for utilizing the deposition of a hard mask during the manufacture of memory devices. Current memory devices are able to retain stored data for a very long time without applying a voltage thereto, and the read rate of such memory devices is relatively high. Erasing stored data and rewriting data to memory devices is relatively easy. Therefore, memory devices have been widely used in microcomputers and automatic control systems, etc. In order to increase bit density and reduce the cost per bit of memory devices, 3D NAND (three-dimensional NAND) memory devices have been developed. Other memory devices, such as DRAM (dynamic random access memory), EM (extended memory) and ReRAM (resistance random access memory), as well as advanced hard mask materials for forming them, have also been developed to further promote the progress of the semiconductor industry.

[0018] Vertical gate 3D memory cells have been explored for use in 3D NAND technology to reduce costs as the number of memory cell layers increases. Oxide / silicon and oxide / nitride layer stacks are practical due to material integration advantages, but with the increasing number of memory cell layers, layer thickness becomes a limiting factor. Therefore, while reducing the thickness of the memory cell layers is advantageous, this reduction in layer thickness presents challenges with oxide quality (i.e., breakdown voltage), silicon resistance, and high-aspect-ratio etching.

[0019] Figure 1 is a schematic side cross-sectional view of an illustrative processing chamber 100 suitable for performing a deposition process. In one embodiment, the processing chamber 100 may be configured to deposit advanced patterned films onto a substrate, such as a hard mask film, for example, an amorphous carbon hard mask film.

[0020] The processing chamber 100 includes a lid assembly 105, a spacer 110 disposed on a chamber body 192, a substrate support 115, and a variable pressure system 120. The lid assembly 105 includes a lid plate 125 and a heat exchanger 130. In the illustrated embodiment, the lid assembly 105 also includes a showerhead 135. However, in other embodiments, the lid assembly 105 includes a concave or dome-shaped gas introduction plate (shown in FIG. 7 ).

[0021] The lid assembly 105 is coupled to a process gas source 140. The process gas source 140 contains a precursor gas for forming a film on a substrate 145 supported on a substrate support 115. As one example, the process gas source 140 includes a precursor gas, such as a carbon-containing gas, a hydrogen-containing gas, helium, or the like. In a specific example, the carbon-containing gas includes acetylene (C2H2). The process gas source 140 provides the precursor gas to a gas chamber 190 disposed in the lid assembly 105. The lid assembly includes one or more channels for directing the precursor gas from the process gas source 140 into the gas chamber 190. The precursor gas flows from the gas chamber through the showerhead 135 into the processing volume 160.

[0022] The lid assembly 105 is also coupled to an optional remote plasma source 150. The remote plasma source 150 is coupled to a cleaning gas source 155 for providing a cleaning gas to a processing volume 160 formed within the spacer 110 between the lid assembly 105 and the substrate 145. In one example, the cleaning gas is provided through a central conduit 191 formed axially through the lid assembly 105. In another example, the cleaning gas is provided through the same channel as the channel through which the precursor gas is directed. Example cleaning gases include oxygen-containing gases (such as oxygen and / or ozone) and fluorine-containing gases (such as NF3), or combinations thereof.

[0023] In addition to or as an alternative to the remote plasma source 150, the lid assembly 105 is also coupled to a first or upper radio frequency (RF) power source 165. The first RF power source 165 facilitates the maintenance and generation of a plasma, such as a plasma generated from a clean gas. In one example, the remote plasma source 150 is omitted, and the clean gas is ionized into a plasma in situ via the first RF power source 165. The substrate support 115 is coupled to a second or lower RF power source 170. The first RF power source 165 can be a high-frequency RF power source (e.g., approximately 13.56 MHz or approximately 40 MHz), and the second RF power source 170 can be a low-frequency RF power source (e.g., approximately 2 MHz or approximately 13.56 MHz). It should be understood that other frequencies are also contemplated. In some instances, the second RF power source 170 is a mixed-frequency RF power source, providing both high-frequency and low-frequency power. Utilizing a dual-frequency RF power source (specifically for the second RF power source 170) improves film deposition. When utilizing a second RF power source 170 that provides dual frequency power, such as 13.56 MHz and 40 MHz, the 13.56 MHz frequency improves species implantation in the deposited film, while the 40 MHz frequency increases film ionization and deposition rate.

[0024] A plasma is established or maintained in the processing volume 160 using one or both of the first RF power source 165 and the second RF power source 170. For example, the second RF power source 170 can be used during a deposition process, and the first RF power source 165 (alone or in combination with the remote plasma source 150) can be used during a cleaning process. In some deposition processes, the first RF power source 165 and the second RF power source 170 are used in combination. During the deposition process, one or both of the first RF power source 165 and the second RF power source 170 provide a power of about 4 kilowatts (kW) to about 9 kW, such as about 4 kW to about 6 kW, in the processing volume 160 to promote ionization of the precursor gas.

[0025] The substrate support 115 is coupled to an actuator 175 that provides movement in the Z direction. The substrate support 115 is also coupled to an electrical conduit 178 that allows vertical movement of the substrate support 115 while maintaining communication with the second RF power source 170 and other power and fluid connections. A spacer 110 is disposed on the chamber body 192. The height of the spacer 110 allows the substrate support 115 to move vertically within the processing volume 160. In one example, the substrate support 115 can be moved from a first distance 180A to a second distance 180B relative to the lid assembly 105 (e.g., relative to the lower surface of the showerhead 135). In certain embodiments, the first distance 180A is approximately 14 inches and the second distance is approximately 11.2 inches. The spacer 110 significantly increases the distance between the substrate support 115 and the lid assembly 105 (and therefore the space therebetween) relative to conventional plasma enhanced chemical vapor deposition (PECVD) processes. The increased distance between the substrate support 115 and the lid assembly 105 reduces corrosion by ionized species in the processing volume 160, resulting in the deposition of films with less tensile stress. Films deposited with less tensile stress promote improved flatness (e.g., less bow) of the substrate on which the film is formed. Reduced bowing of the substrate results in improved precision in downstream patterning operations.

[0026] The variable pressure system 120 includes a first pump 182 and a second pump 184. The first pump 182 is a roughing pump that can be utilized during cleaning processes and / or substrate transfer processes. Roughing pumps are generally configured to move higher volumetric flow rates and / or operate at relatively high (but still sub-atmospheric) pressures. In one example, during a cleaning process, the first pump maintains a pressure within the processing chamber of approximately 300 m-torr to approximately 800 m-torr, such as approximately 400 torr to approximately 6 m-torr. Utilizing the roughing pump during cleaning operations facilitates relatively higher pressures and / or volumetric flows of the cleaning gas (compared to deposition operations). The relatively higher pressures and / or volumetric flows during cleaning operations improve the cleaning of chamber surfaces.

[0027] The second pump 184 may be a turbo pump utilized during the deposition process. Turbopumps are generally configured to operate at relatively low volumetric flow rates and / or pressures. For example, during the deposition process, the tubular molecular pump is configured to maintain the processing volume 160 of the process chamber at a pressure of less than about 10 mtorr (such as about 5 mtorr or less). When depositing a carbon-based hard mask, the reduced pressure of the processing volume 160 maintained during deposition promotes the deposition of a film with reduced tensile stress and / or increased sp 2 -sp 3 Thus, the processing chamber 100 is configured to utilize both relatively low pressures to improve deposition and relatively high pressures to improve cleaning.

[0028] In certain embodiments, both the first pump 182 and the second pump 184 are utilized during the deposition process. A valve 186 is utilized to control the conductance path to one or both of the first pump 182 and the second pump 184. The valve 186 also provides for symmetrical pumping from the processing volume 160.

[0029] Figure 2A and Figure 2B FIG is a schematic cross-sectional view of the electrical conduit 178. The electrical conduit 178 includes a first end 200 and a second end 205. The first end 200 interfaces with the substrate support 115 and the second end 205 interfaces with the facility interface 215. The facility interface 215 includes the second RF power source 170 (shown in FIG. Figure 1 ) and RF matching (not shown).

[0030] The electrical conduit 178 is a single (unitary) composite conductor having bends 210 formed therein. The terms "single" and / or "unitary" may be defined as having the indivisible character of a unit (i.e., integral). The electrical conduit 178 comprises at least three pieces, each longitudinally formed as a unified or single unit. The terms "single" and / or "unitary" may be distinguished from conventional conductive components, which include modular or discrete parts that are welded, soldered, or bonded together.

[0031] The individual pieces are fabricated in a straight orientation and then bent to include bend 210. Thus, the three pieces of electrical conduit 178 have no welded joints or seams along their length, which increases their efficiency and / or operation. Bend 210 is substantially 90 degrees, with a substantially defined angle of + / - 5 degrees. The three pieces include a center conductor 220, a dielectric jacket 225, and an outer conductor 230. Center conductor 220 is typically a metal with good electrical and thermal conductivity, such as copper (Cu). Dielectric jacket 225 is an electrically insulating material, such as a polymer material, for example, polyetheretherketone (PEEK) or polytetrafluoroethylene (PTFE). Outer conductor 230 is a metallic material, such as aluminum.

[0032] The substrate support 115 includes an electrostatic chuck 235 and a facilities plate 240 separated by a dielectric layer 245. The center conductor 220 provides RF power to the facilities plate 240, while the outer conductor 230 acts as a ground connection (eg, electrically floating).

[0033] The electrical conduit 178 includes a first flange 246 at the first end 200 and a second flange 248 at the second end 205. The first flange 246 is coupled to the substrate support 115 and the second flange 248 is coupled to the facility interface 215.

[0034] exist Figure 2A The electrical conduits 178 in the apparatus include a central conduit 247 that can be utilized to transmit power or fluid from the facility interface 215 to the substrate support 115. For example, the central conduit 247 can be utilized to provide chucking power to the electrostatic chuck 235. In another example, the central conduit 247 can be utilized to provide coolant and / or backside gas to the substrate support 115.

[0035] Figure 2B for Figure 1 An enlarged partial cross-sectional view of the electrical conduit 178 is shown in Figure A. The electrical conduit 178 includes a cavity or central opening 250 formed through the inner diameter of the center conductor 220. Figure 2A The central catheter 247 shown in FIG. Figure 2B 2. A central conductor 220, which may be a tubular member, is shown between a first dielectric layer 255 and a second dielectric layer 260. The first dielectric layer 255 and the second dielectric layer 260 include a dielectric jacket 225. An outer conductor 230, which may be a tubular member, is shown outside the second dielectric layer 260.

[0036] The electrical conduit 178 according to this embodiment is an improvement over conventional cables or conductors. For example, the electrical conduit 178 includes a bend 210 (e.g., a curved or bowed section) where conventional conductors would have a sharp L-shaped or 90-degree connection between two discrete conductors. The bend 210 eliminates arcing at conventional 90-degree connections. Furthermore, conventional conductors include multiple blocks welded at the seam. The welded seam has a higher resistance than the center conductor 220. Therefore, providing a unitary electrical conduit 178 improves current flow along the center conductor 220. The single block design also provides more robust isolation while having a smaller outside diameter than conventional conductors.

[0037] Additionally, while the center conductor 220 is utilized to carry electrical power, it is also utilized to conduct heat away from the substrate support 115. For example, testing with the electrical conduit 178 coupled to the substrate support 115 compared to conventional conductors showed a significant reduction in the temperature of the electrostatic chuck 235.

[0038] One or both of the central opening 250 and the central conduit 247 can be used to deliver power to the electrostatic chuck 235, route a temperature probe (such as a thermocouple), and other electrical connections. The central opening 250 and / or the central conduit 247 effectively shields RF noise, which provides for noise-free (or minimally noisy) coupling with components disposed therein.

[0039] The electrical conduit 178 can be formed by fabricating the various conductors and dielectric layers in a straight (e.g., 180-degree) orientation and then bending the fabricated article from the straight orientation to include the bend 210. The center conduit 247 and outer conductor 230 are vacuum annealed during initial fabrication. Next, a dielectric jacket 225 is provided over the center conductor 220. Thereafter, the outer conductor 230 is provided over the dielectric jacket 225 to form an unbent assembly. The first flange 246 and the second flange 248 are then welded to the unbent assembly. After welding, the unbent assembly is attached to a fixture to form the bend 210. The electrical conduit 178 includes an outside diameter 270 before bending, and the outside diameter after bending can be + / - 0.06 inches at the bend 210.

[0040] Figure 3A FIG is an enlarged cross-sectional view of the first end 200 of the electrical conduit 178. The first end 200 includes a connector 320 extending from an outer dielectric sheath 325. Figure 3B is a cross-sectional view of the second end 205 of the electrical conduit 178. The second end 205 also includes a connector 330 extending from the outer dielectric sheath 325.

[0041] Connectors 320 and 330 include a first conductor 335 centrally located within an outer dielectric jacket 325. Outer dielectric jacket 325 does not extend to the end of electrical conduit 178 to allow coupling with substrate support 115. Connectors 320 and 330 also include a second conductor 340 substantially surrounding first conductor 335.

[0042] Referring to connector 320, first conductor 335 is connected to a socket 345 that is coupled to first conductor 335 through conductive housing 350. Socket 345 and conductive housing 350 include a threaded connection 355. Referring to connector 330, first conductor 335 is coupled to a male connector 360. Socket 345 is adapted to couple to a chuck electrode in electrostatic chuck 235.

[0043] The first conductor 335 and the second conductor 340 are electrically separated by one or both of a dielectric material 365 and a space or gap 370 (within the central opening 250). The dielectric material 365 can be a polymer material such as PEEK, PTFE, or other polymeric and / or insulating materials. The first conductor 335, the second conductor 340, the receptacle 345, the conductive housing 350, and the male connector 360 are made of a conductive metal such as copper.

[0044] The configuration of the electrical conduit 178 as described herein provides an exposed interface surface 375 of the second conductor 340 that includes a length 380 that is greater than a conventional conductor length. Additionally, the configuration of the electrical conduit 178 as described herein provides a shoulder area or stop 385 for the male connector 360.

[0045] Figure 4 2 is an enlarged cross-sectional view of a portion of the electrostatic chuck 235 and the connector 320. The electrostatic chuck 235 includes a puck 400. The puck 400 includes a plurality of radially oriented fluid channels 405 and a plurality of axially oriented fluid channels 410 formed therein that are in fluid communication with one another. Each of the fluid channels 405 is in fluid communication with an inlet conduit 412. The inlet conduit 412 is coupled to a cooling source 414. Each of the fluid channels 405 is sealed by a top plate 415. The top plate 415 can be made of the same material as the puck 400, or aluminum, and can be welded or otherwise bonded to the puck 400 to seal the fluid channels 405.

[0046] The cooling source 414 contains a coolant that cools the substrate support 115. For example, the coolant from the cooling source 414 flows to the fluid channel 405 and / or the fluid channel 410 to maintain the temperature of the electrostatic chuck 235 (and / or the substrate positioned thereon). The temperature of the substrate support 115 can be maintained at a temperature between about 0 degrees Celsius and about -10 degrees Celsius by the cooling fluid. The coolant includes a heat transfer fluid, for example, a heat transfer fluid such as ... Heat transfer fluid sold under.

[0047] Fluid channel 410 is coupled to circular channel 420 through central channel 425. Circular channel 420 substantially surrounds connector 320. Fluid flows from fluid channel 410 through central channel 425 to circular channel 420. Seal 430, such as an elastomeric O-ring, prevents fluid from leaking out of circular channel 420.

[0048] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof, the scope of which is to be determined by the claims that follow.

Claims

1. A unified electrical conduit, comprising: a center conductor, the center conductor comprising a first tube; a receptacle coupled to the first end of the center conductor, wherein the receptacle includes a threaded connection; a male connector coupled to the second end of the center conductor; a dielectric jacket surrounding the center conductor; as well as An outer conductor includes a second tube surrounding the first tube and the dielectric jacket, wherein a substantially 90 degree bend is formed along the length of the outer conductor.

2. The unified electrical conduit of claim 1, wherein the dielectric jacket comprises a first dielectric layer surrounded by a second dielectric layer.

3. The unified electrical conduit of claim 1, wherein the center conductor comprises copper (Cu) material.

4. The unified electrical conduit of claim 3, wherein the outer conductor comprises an aluminum (Al) material. The unified electrical conduit according to claim 3 , wherein the first tube is made of the copper (Cu) material. The unified electrical conduit of claim 1 , further comprising a first flange and a second flange coupled to the outer conductor.

7. The unified electrical conduit of claim 6, wherein the first flange is coupled to a first end of the outer conductor and the second flange is coupled to a second end of the outer conductor.

8. The unified electrical conduit of claim 1, wherein the outer conductor is used to conduct heat as well as electricity.

9. The unified electrical conduit of claim 1, wherein the second end comprises a connector having a first conductor and a second conductor, the second conductor surrounding the male insert.

10. The unified electrical conduit of claim 9, wherein the first conductor is electrically coupled to the male connector.

11. The unified electrical conduit of claim 9, wherein the first conductor extends to the first end, and the receptacle is electrically coupled to the first conductor.

12. The unified electrical conduit of claim 1, wherein the male insert extends beyond an end of the dielectric sheath.

13. The unified electrical conduit of claim 1, wherein the threaded connection provides electrical communication between the male connector and the receptacle.

14. A chamber comprising: a chamber body defining a processing space; a substrate support movably disposed in the processing space; as well as a unified electrical conduit coupled to the substrate support, wherein the unified electrical conduit comprises: a center conductor, the center conductor comprising a first tube; a receptacle coupled to the first end of the center conductor, wherein the receptacle includes a threaded connection; a male connector coupled to the second end of the center conductor; a dielectric jacket surrounding the center conductor; and An outer conductor includes a second tube surrounding the first tube and the dielectric jacket, wherein a substantially 90 degree bend is formed along the length of the outer conductor.

15. The chamber of claim 14, wherein the dielectric jacket comprises a first dielectric layer surrounded by a second dielectric layer.

16. The chamber of claim 14, wherein the first tube of the center conductor is made of a copper (Cu) material, and the outer conductor comprises an aluminum (Al) material.

17. The chamber of claim 14, further comprising a first flange and a second flange coupled to the outer conductor, wherein the first flange is coupled to a first end of the outer conductor and the second flange is coupled to a second end of the outer conductor.

18. A method for forming a unified electrical conduit, the method comprising: Forming straight products, including: positioning a first tube made of a conductive material; installing a dielectric sheath around a perimeter of the first tube; positioning a second tube made of a conductive material to surround the outer surface of the dielectric sheath; and forming a bend in the straight article along the length of the straight article, wherein the bend is substantially 90 degrees; coupling a socket to the first end of the first tube, wherein the socket includes a threaded connection; and A male connector is coupled to the second end of the first tube.

19. The method of claim 18, wherein the first tube and the second tube are annealed prior to installing the dielectric jacket, and the dielectric jacket comprises a first dielectric layer and a second dielectric layer.

20. The method of claim 18, wherein flanges are coupled to the second tube at opposite ends of the second tube, and the flanges are coupled to the second tube before forming the bend.

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