A magnetic heterojunction structure and a method for controlling and realizing logic and polymorphic storage functions

Abstract

The present invention relates to a magnetic heterojunction structure and a method for controlling and realizing logic and multi-state storage functions, which comprises, from bottom to top, a substrate, an in-plane antiferromagnetic layer, an in-plane ferromagnetic layer, a non-magnetic layer, a perpendicular ferromagnetic layer, and a perpendicular antiferromagnetic layer; the in-plane ferromagnetic layer and the perpendicular ferromagnetic layer are coupled together through the intermediate non-magnetic layer; the in-plane ferromagnetic layer and the perpendicular antiferromagnetic layer have an in-plane exchange bias, i.e., an in-plane exchange bias; the in-plane antiferromagnetic layer and the perpendicular antiferromagnetic layer have an out-of-plane exchange bias, i.e., an out-of-plane exchange bias. Effectively controlling the in-plane exchange bias and out-of-plane exchange bias effects simultaneously in a single magnetic heterojunction not only greatly expands the degree of freedom in the design of new spin electronic devices, but is also expected to promote the research and development of three-dimensional multifunctional spin electronic devices.

Description

Technical Field

[0001] The present invention relates to a single magnetic heterojunction structure having both in-plane and out-of-plane exchange bias effects and a method for realizing spin logic and multi-state storage functions by regulating the exchange bias in both in-plane and out-of-plane directions, belonging to the technical field of data storage and logic operation of information technology. Background Art

[0002] The exchange bias effect originates from the interfacial exchange coupling between the ferromagnetic layer and the antiferromagnetic layer, and is manifested as the shift of the hysteresis loop relative to the zero field on a macroscopic scale. The exchange bias effect has been widely used in giant magnetoresistance sensors, spin valves, and magnetic random access memories, and plays an important role in spintronic devices. In recent years, with the rapid development of antiferromagnetic spin electronics, a new wave of research on the exchange bias effect has been launched. This is because studies have found that the pinned layer materials commonly used in the exchange bias effect, such as antiferromagnetic materials such as IrMn and PtMn, can also generate spin currents, and can achieve magnetization reversal driven by spin-orbit torque without external field assistance in a system with perpendicular magnetization. On the other hand, with the increase of perpendicular magnetization structures in modern magnetic memories and magnetic tunnel junctions, and the rapid development of in-plane and out-of-plane hybrid magnetic anisotropy devices such as spin nano-oscillators, more and more single device structures require ferromagnetic layer materials with both in-plane magnetic anisotropy and perpendicular magnetic anisotropy. In order to improve the thermal stability of such hybrid in-plane and out-of-plane magnetic anisotropy devices, it is urgent to have both in-plane exchange bias and out-of-plane exchange bias effects in a single heterostructure. Although the coexistence of in-plane exchange bias and out-of-plane exchange bias effects has been found in special ferromagnetic / antiferromagnetic / ferromagnetic three-layer films and magnetic multilayer film structures, experiments have also attempted to control the exchange bias effect through different methods such as thermal annealing, mechanical strain, magnetoelectric coupling, and spin-orbit moment. However, so far, it has not been possible to effectively control both in-plane exchange bias and out-of-plane exchange bias in a single magnetic heterostructure. Effectively controlling both in-plane exchange bias and out-of-plane exchange bias in a single magnetic heterojunction can not only greatly expand the freedom of design of new spintronic devices, but also promote the development of three-dimensional multifunctional spintronic devices. Summary of the invention

[0003] In view of the shortcomings of the prior art, the present invention provides a single magnetic heterojunction structure having both in-plane and out-of-plane exchange bias effects; the present invention also provides a method for regulating exchange bias in two directions in a single magnetic heterojunction to realize logic and multi-state storage functions;

[0004] The present invention realizes effective regulation of both in-plane exchange bias and out-of-plane exchange bias effects in a single magnetic heterostructure, and obtains polymorphic storage and spin logic prototype devices based on the regulation of the exchange bias effect.

[0005] Terminology explanation:

[0006] Hallbar is used for Hall test. A constant current source is added to the electrodes at both ends of the Hall bar, and the voltage on both sides of the Hall bar is measured under an external magnetic field. The semiconductor's Hall resistance, doping concentration, conductivity type and other properties can be determined.

[0007] The technical solution of the present invention is:

[0008] A single magnetic heterojunction structure having both in-plane and out-of-plane exchange bias effects comprises, from bottom to top, a substrate, an in-plane antiferromagnetic layer, an in-plane ferromagnetic layer, a non-magnetic layer, a perpendicular ferromagnetic layer, and a perpendicular antiferromagnetic layer; the in-plane ferromagnetic layer and the perpendicular ferromagnetic layer are coupled together via the non-magnetic layer in the middle; there is an in-plane exchange bias between the in-plane ferromagnetic layer and the in-plane antiferromagnetic layer, namely, an in-plane exchange bias, and there is an out-of-plane exchange bias between the perpendicular ferromagnetic layer and the perpendicular antiferromagnetic layer.

[0009] Preferably, according to the present invention, the in-plane antiferromagnetic layer is any antiferromagnetic material selected from IrMn, PtMn, PdMn, FeMn, CrMn, NiMn, NiO, CoO, MnO, FeO, and Fe2O3; the perpendicular antiferromagnetic layer is any antiferromagnetic material selected from IrMn, PtMn, PdMn, FeMn, CrMn, NiMn, NiO, CoO, MnO, FeO, and Fe2O3; the in-plane ferromagnetic layer is a ferromagnetic material having in-plane magnetic anisotropy. , is any one of Co, Fe, Ni, CoFe, CoFeB, CoNi, NiFe, CoPt, CoTb, and FePt; the perpendicular ferromagnetic layer is a ferromagnetic material with perpendicular magnetic anisotropy, which is any one of Co, Fe, Ni, CoFe, CoFeB, CoNi, NiFe, CoPt, CoTb, and FePt; the non-magnetic layer is any one of Ta, Ru, Gd, Ti, W, Cr, Cu, Hf, Mo, Pd, Au, and Pt.

[0010] Preferably according to the present invention, the thickness of the in-plane antiferromagnetic layer is 1-20nm; the thickness of the perpendicular antiferromagnetic layer is 1-20nm; the thickness of the in-plane ferromagnetic layer is 0.5-10nm; the thickness of the perpendicular ferromagnetic layer is 0.5-10nm; the thickness of the non-magnetic layer is 0.3-3nm.

[0011] Most preferably, the material of the in-plane antiferromagnetic layer is IrMn, with a thickness of 8nm; the material of the perpendicular antiferromagnetic layer is CoO, with a thickness of 6nm; the material of the in-plane ferromagnetic layer is Co, with a thickness of 2nm; the material of the perpendicular ferromagnetic layer is CoPt, with a thickness of 3.3nm; and the material of the non-magnetic layer is Ru, with a thickness of 0.8nm.

[0012] Further preferably, CoPt is a ferromagnetic alloy with a composition gradient, which is achieved by alternately sputtering Co and Pt with a thickness of several atomic layers, and CoPt includes, from bottom to top, Pt with a thickness of 0.7nm, Co with a thickness of 0.3nm, Pt with a thickness of 0.5nm, Co with a thickness of 0.5nm, Pt with a thickness of 0.3nm, and Co with a thickness of 1.0nm.

[0013] A method for realizing a multi-state storage function by regulating exchange bias in two directions in a single magnetic heterojunction, specifically:

[0014] (1) Applying an external magnetic field and a current pulse simultaneously to set the in-plane exchange bias to a specific direction;

[0015] (2) Only current pulses are applied without applying an external magnetic field, and the direction of the in-plane exchange bias is not changed. The spin-orbit moment effect is used to regulate the exchange bias in the vertical direction to achieve multi-state storage. Specifically, it means: by controlling the amplitude of the applied current pulse, the spin arrangement at the interface of the perpendicular ferromagnetic layer and the perpendicular antiferromagnetic layer is regulated. Different spin arrangements correspond to different Hall resistances. Different Hall resistance states are used to store different information, thereby achieving a multi-state storage function.

[0016] According to the preferred embodiment of the present invention, in step (1), the external magnetic field H x The value range is -1000Oe<H x <-50Oe and +50Oe<H x <+1000Oe, pulse current I x The value range is -20mA<I x <-10mA and +10mA<H x <+20mA, pulse current density is 10 6 -10 7 A / cm 2 , H x and I x They are all set along the length direction of the Hall bar.

[0017] Further preferably, in step (1), the external magnetic field H x The value range is -100Oe≤H x <-50Oe and +50Oe<H x ≤+100Oe, pulse current I x The value range is -19mA≤I x <-12mA and +12mA<H x ≤+19mA.

[0018] Preferably, according to the present invention, by simultaneously applying an external magnetic field and a pulse current, the in-plane exchange bias and the out-of-plane exchange bias are set to different arrangements to achieve a non-volatile ten-state storage function, specifically referring to:

[0019] A. Apply external magnetic field and current pulse at the same time, external magnetic field H x = +100Oe, current pulse I x = +19mA, so that the magnetization state of the in-plane ferromagnetic layer is along the +x direction, and the interface magnetic moment of the perpendicular ferromagnetic layer and the perpendicular antiferromagnetic layer is along the +z direction; the x direction is the length direction of the Hall bar, and the current is applied along this direction; the y direction is the width direction of the Hall bar, and the Hall voltage is detected along this direction; the z direction is the sample growth direction;

[0020] B. After removing the external magnetic field and current pulse applied in step A, apply a current pulse I x = +19mA, and change the write current pulse I x The pulse intensity makes I x In the range of -14mA to -19mA, the out-of-plane anomalous Hall curve was measured and a stable resistance state was obtained;

[0021] Repeat step B nine times, writing a current pulse I in each step B. x The pulse intensity is different, corresponding to ten stable resistance states. These ten residual magnetic states are used to represent 0 to 9 in decimal system, realizing non-volatile ten-state storage function.

[0022] When step B is performed for the first time, the first current pulse I is applied x =+19mA, that is, the first stable state is obtained. Each subsequent execution of step B will produce another stable state, and a total of ten stable states are obtained.

[0023] A method for controlling exchange bias in two directions in a single magnetic heterojunction to realize spin logic function, specifically:

[0024] ① Design a Hallbar device having two current channels and sharing one voltage channel, wherein the two current channels include a first channel and a second channel;

[0025] ② Simultaneously applying an external magnetic field and a current pulse to set the direction of the in-plane exchange bias in the first channel, and simultaneously applying an external magnetic field and a current pulse to set the direction of the in-plane exchange bias in the second channel;

[0026] The arrangement direction of the magnetic moments in the first channel and the second channel is controlled by controlling the direction of the in-plane exchange bias in the first channel and the second channel, as well as the size and direction of the input current pulse in the first channel and the second channel; specifically, when performing logic operations, first, the in-plane exchange bias in the first channel and the second channel is set to different configurations, and secondly, under zero magnetic field, different current pulses are input into the first channel and the second channel as logic inputs, and the Hall voltage or Hall resistance of the entire device is used as logic output to realize the spin logic function.

[0027] According to the preferred embodiment of the present invention, in step ②, the process of implementing the AND logic function is:

[0028] Apply an external magnetic field H to both the first channel and the second channel. x = +100Oe and current pulse I x = +19mA, the direction of the in-plane exchange bias and the in-plane ferromagnetic layer magnetization direction in the first channel and the second channel are both set to be along the +x direction; at this time, R H -I x The loop is reversed counterclockwise when a current pulse I is applied x = +18mA, the vertical ferromagnetic layer magnetic moment of a single channel is upward; when the current pulse I x =-18mA, the magnetic moment of the perpendicular ferromagnetic layer of a single channel is downward; when I1=I2=+18mA, that is, when both logic inputs are "1", I1 and I2 refer to the current pulses applied by the first channel and the second channel respectively, and the magnetization directions of the perpendicular ferromagnetic layers in the first channel and the second channel are both upward, and the corresponding logic output is "1", realizing the AND logic function.

[0029] According to the preferred embodiment of the present invention, in step ②, the process of implementing the NOR logic function is:

[0030] Apply an external magnetic field H to both the first channel and the second channel. x = -100Oe and current pulse I x = +19 mA, the direction of the in-plane exchange bias and the in-plane ferromagnetic layer magnetization direction in the first channel and the second channel are both set to be along the -x direction; at this time, R H -I x The loop is flipped clockwise when a current pulse I is applied x = +18mA, the vertical ferromagnetic layer magnetic moment of a single channel is downward; when the current pulse I x=-18mA, the magnetic moment of the perpendicular ferromagnetic layer of a single channel is upward; when I1=I2=-18mA, that is, when both logic inputs are "1", I1 and I2 refer to the current pulses applied by the first channel and the second channel respectively, and the magnetization directions of the perpendicular ferromagnetic layers in the first channel and the second channel are both upward, and the corresponding logic output is "1", realizing the NOR logic function.

[0031] According to the preferred embodiment of the present invention, in step ②, the process of implementing the NIMP logic function is:

[0032] Apply an external magnetic field H to the first channel. x = +100Oe and current pulse I1 = +19mA, the direction of the in-plane exchange bias in the first channel and the in-plane ferromagnetic layer magnetization direction are both set along the +x direction;

[0033] Apply an external magnetic field H to the second channel. x = -100 Oe and current pulse I2 = +19 mA, the direction of the in-plane exchange bias in the second channel and the in-plane ferromagnetic layer magnetization direction are both set along the -x direction;

[0034] At this time, R in the first channel H -I x The loop is flipped counterclockwise. When the current pulse I1 = +18mA is applied, the magnetic moment of the perpendicular ferromagnetic layer of the first channel is upward. When the current pulse I1 = -18mA is applied, the magnetic moment of the perpendicular ferromagnetic layer of the first channel is downward.

[0035] R in the second channel H -I x The loop is flipped clockwise. When the current pulse I2 = +18mA is applied, the magnetic moment of the perpendicular ferromagnetic layer of the second channel is downward. When the current pulse I2 = -18mA is applied, the magnetic moment of the perpendicular ferromagnetic layer of the second channel is upward.

[0036] Therefore, when the input in the first channel is "1", i.e., I1 = +18 mA, and the input in the second channel is "0", i.e., I2 = -18 mA, the magnetization directions of the perpendicular ferromagnetic layers in both the first channel and the second channel are upward, and the corresponding logic output is "1", realizing the NIMP logic function.

[0037] According to the preferred embodiment of the present invention, in step ②, the process of implementing the Converse NIMP logic function is:

[0038] Apply an external magnetic field H to the first channel. x = -100 Oe and current pulse I1 = +19 mA, the direction of the in-plane exchange bias in the first channel and the in-plane ferromagnetic layer magnetization direction are both set along the -x direction;

[0039] Apply an external magnetic field H to the second channel.x = +100Oe and current pulse I2 = +19mA, the direction of the in-plane exchange bias in the second channel and the in-plane ferromagnetic layer magnetization direction are both set along the +x direction;

[0040] At this time, R in the first channel H -I x The loop is flipped clockwise. When the current pulse I1 = +18mA is applied, the magnetic moment of the perpendicular ferromagnetic layer of the first channel is downward. When the current pulse I1 = -18mA is applied, the magnetic moment of the perpendicular ferromagnetic layer of the first channel is upward.

[0041] R in the second channel H -I x The loop is flipped counterclockwise. When the current pulse I2 = +18mA is applied, the magnetic moment of the perpendicular ferromagnetic layer of the second channel is upward. When the current pulse I2 = -18mA is applied, the magnetic moment of the perpendicular ferromagnetic layer of the first channel is downward.

[0042] Therefore, when the input in the first channel is "0", i.e., I1 = -18 mA, and the input in the second channel is "1", i.e., I2 = +18 mA, the magnetization directions of the perpendicular ferromagnetic layers in both the first channel and the second channel are upward, and the corresponding logic output is "1", realizing the Converse NIMP logic function.

[0043] The beneficial effects of the present invention are:

[0044] The simultaneous effective control of the in-plane exchange bias and out-of-plane exchange bias effects in a single magnetic heterojunction not only greatly expands the freedom in the design of new spin electronic devices, but also is expected to promote the research and development of three-dimensional multifunctional spin electronic devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] Figure 1 A schematic diagram of the structure and electrical transport measurement of a single magnetic heterojunction of the present invention;

[0046] Figure 2 Schematic diagram of simultaneously regulating the in-plane and out-of-plane exchange bias through magnetic field and current pulse;

[0047] Figure 3 A schematic diagram of realizing multi-state storage by controlling the intensity of current pulses;

[0048] Figure 4 Schematic diagram of realizing logic functions by regulating exchange bias. DETAILED DESCRIPTION

[0049] The present invention will be further described below with reference to the accompanying drawings and embodiments, but is not limited thereto.

[0050] Example 1

[0051] A single magnetic heterojunction structure having both in-plane and out-of-plane exchange bias effects comprises, from bottom to top, a substrate, an in-plane antiferromagnetic layer, an in-plane ferromagnetic layer, a non-magnetic layer, a perpendicular ferromagnetic layer (out-of-plane ferromagnetic layer), and a perpendicular antiferromagnetic layer (out-of-plane antiferromagnetic layer); the in-plane ferromagnetic layer and the perpendicular ferromagnetic layer are coupled together via the intermediate non-magnetic layer; there is an in-plane exchange bias between the in-plane ferromagnetic layer and the in-plane antiferromagnetic layer, namely, an in-plane exchange bias; there is an out-of-plane exchange bias between the perpendicular ferromagnetic layer and the perpendicular antiferromagnetic layer, namely, an out-of-plane exchange bias.

[0052] The structural features of the above-mentioned single magnetic heterojunction include: (1) There is an in-plane exchange bias between the in-plane ferromagnetic layer and the in-plane antiferromagnetic layer, i.e., an in-plane exchange bias. (2) There is an out-of-plane exchange bias between the perpendicular ferromagnetic layer and the perpendicular antiferromagnetic layer, i.e., an out-of-plane exchange bias. (3) There is interlayer exchange coupling between the in-plane ferromagnetic layer and the perpendicular ferromagnetic layer. (4) With the assistance of interlayer coupling, the spin current generated by the perpendicular magnetic layer itself or the non-magnetic layer can drive the magnetic moment of the perpendicular magnetic layer to flip through the spin-orbit torque effect.

[0053] Example 2

[0054] The single magnetic heterojunction structure having both in-plane and out-of-plane exchange bias effects according to Embodiment 1 is different in that:

[0055] The in-plane antiferromagnetic layer is any antiferromagnetic material selected from IrMn, PtMn, PdMn, FeMn, CrMn, NiMn, NiO, CoO, MnO, FeO, and Fe2O3; the perpendicular antiferromagnetic layer is any antiferromagnetic material selected from IrMn, PtMn, PdMn, FeMn, CrMn, NiMn, NiO, CoO, MnO, FeO, and Fe2O3; the in-plane ferromagnetic layer is a ferromagnetic material with in-plane magnetic anisotropy, which is Co, F The vertical ferromagnetic layer is a ferromagnetic material with perpendicular magnetic anisotropy, which is any one of Co, Fe, Ni, CoFe, CoFeB, CoNi, NiFe, CoPt, CoTb, and FePt; the non-magnetic layer is any one of Ta, Ru, Gd, Ti, W, Cr, Cu, Hf, Mo, Pd, Au, and Pt.

[0056] The thickness of the in-plane antiferromagnetic layer is 1-20nm; the thickness of the perpendicular antiferromagnetic layer is 1-20nm; the thickness of the in-plane ferromagnetic layer is 0.5-10nm; the thickness of the perpendicular ferromagnetic layer is 0.5-10nm; and the thickness of the non-magnetic layer is 0.3-3nm.

[0057] Example 3

[0058] The single magnetic heterojunction structure having both in-plane and out-of-plane exchange bias effects according to Embodiment 1 is different in that:

[0059] like Figure 1 As shown in a, the material of the in-plane antiferromagnetic layer is IrMn, with a thickness of 8nm; the material of the perpendicular antiferromagnetic layer is CoO, with a thickness of 6nm; the material of the in-plane ferromagnetic layer is Co, with a thickness of 2nm; Co has in-plane magnetic anisotropy, forming an in-plane exchange bias at the IrMn / Co interface; the material of the perpendicular ferromagnetic layer is CoPt, with a thickness of 3.3nm; the CoPt alloy has perpendicular magnetic anisotropy, forming an out-of-plane exchange bias at the CoPt / CoO interface; the material of the non-magnetic layer is Ru, with a thickness of 0.8nm.

[0060] The above single magnetic heterojunction structure was prepared on a Si / SiO2 substrate using a magnetron sputtering apparatus; the single magnetic heterojunction structure was annealed at 250°C with an in-plane magnetic field of 5000 Oe for 1 hour.

[0061] CoPt is a ferromagnetic alloy with a composition gradient, which is achieved by alternately sputtering Co and Pt with a thickness of several atomic layers. CoPt includes, from bottom to top, Pt with a thickness of 0.7nm, Co with a thickness of 0.3nm, Pt with a thickness of 0.5nm, Co with a thickness of 0.5nm, Pt with a thickness of 0.3nm, and Co with a thickness of 1.0nm.

[0062] A Hallbar structure with a length of 70 μm and a width of 5 μm was prepared by photolithography and argon ion etching, in which the width of the Hall voltage detection channel was 2 μm.

[0063] Figure 2 The results of simultaneously regulating the in-plane exchange bias and out-of-plane exchange bias in a single magnetic heterojunction are demonstrated.

[0064] First, set H x = ±100Oe, then apply I x = Single current pulse of ±19mA.

[0065] Then, set H x = 0Oe and measure R H -H z Loop and R H -I x The in-plane exchange bias and the magnetization direction of the in-plane ferromagnetic layer Co can be detected by the polarity of the magnetic moment reversal driven by the spin-orbit moment (R H -I x loop), while the out-of-plane exchange bias is detected via the anomalous Hall effect (R H -H z return line).

[0066] Figure 2 The results were measured at 200K with different H x and I x The measurement results after the application of the conditions are:

[0067] a:H x =+100Oe,I x = +19mA( Figure 2 (shown in a);

[0068] b:H x =+100Oe,I x =-19mA( Figure 2 (as shown in b);

[0069] c:H x =-100Oe,I x = +19mA( Figure 2 (as shown in c);

[0070] d:H x =-100Oe,I x =-19mA( Figure 2 (shown in d).

[0071] from Figure 2 A and Figure 2 As can be seen in b, when H is applied x = +100Oe, regardless of the current direction, R H -I x The polarity of the loop is always counterclockwise. This means that the magnetization direction of the in-plane ferromagnetic layer Co is always in the +x direction, and the effective field provided to the perpendicular ferromagnetic layer CoPt by the interlayer antiferromagnetic exchange coupling is always in the -x direction. x = +100Oe, but when the direction of the applied current pulse is different, R H -H z Specifically, when a current pulse is applied in the +x direction, the observed R H -H z The loop is deflected in the -z direction, while the current pulse applied in the -x direction is deflected in the +z direction. x =-100Oe, I x = ±19mA, both get R flipped in clockwise direction H -I x loop, indicating that the magnetization direction of the in-plane ferromagnetic layer Co is along the -x direction. H -H z Loop in I x = +19mA obviously shifted towards +z direction ( Figure 2c), while in I x = -19mA, it deviates to the -z direction ( Figure 2 In summary, when the magnetic field and current pulse are applied simultaneously, the direction of the in-plane exchange bias is along the direction of the external magnetic field, while the out-of-plane exchange bias is determined by the relative direction between the external magnetic field and the current pulse. Figure 2 A and Figure 2 As shown in (d), R offset in the -z direction is obtained. H -H z loop, that is, the out-of-plane exchange bias is positive; when the magnetic field and current pulse are applied in opposite directions (as shown in Figure 2b and 2c), R is obtained that is offset to the +z direction. H -H z loop, that is, the out-of-plane exchange bias is negative. Figure 2 As shown, by controlling the direction of the external magnetic field and the current pulse, the in-plane exchange bias and the out-of-plane exchange bias can be effectively controlled to obtain four exchange bias arrangements.

[0072] Example 4

[0073] A method for controlling the exchange bias in two directions in a single magnetic heterojunction described in any one of Examples 1-3 to realize a multi-state storage function, wherein a Hallbar structure with a length of 70 μm and a width of 5 μm is prepared by photolithography and argon ion etching, wherein the detection channel width of the Hall voltage is 2 μm, specifically refers to:

[0074] (1) Applying an external magnetic field and a current pulse simultaneously to set the in-plane exchange bias to a specific direction;

[0075] (2) Only current pulses are applied without applying an external magnetic field, and the direction of the in-plane exchange bias is not changed. The spin-orbit moment effect is used to regulate the exchange bias in the vertical direction to achieve multi-state storage. Specifically, it means: by controlling the amplitude of the applied current pulse, the spin arrangement at the interface of the perpendicular ferromagnetic layer and the perpendicular antiferromagnetic layer is regulated. Different spin arrangements correspond to different Hall resistances. Different Hall resistance states are used to store different information, thereby achieving a multi-state storage function.

[0076] Therefore, by changing the amplitude of the applied current pulse, different Hall resistance states can be obtained, and different Hall resistance states can be used to store different information.

[0077] In step (1), the external magnetic field H x The value range is -1000Oe<H x <-50Oe and +50Oe<H x <+1000Oe, pulse current I x The value range is -20mA<Ix <-10mA and +10mA<H x <+20mA, pulse current density is 10 6 -10 7 A / cm 2 , H x and I x They are all set along the length direction of the Hall bar. Figure 1 As shown in b, the positive direction is "+" and the negative direction is "-".

[0078] Example 5

[0079] The difference between the method for realizing a multi-state storage function by regulating exchange bias in two directions in a single magnetic heterojunction described in Example 4 is that:

[0080] In step (1), the external magnetic field H x The value range is -100Oe≤H x <-50Oe and +50Oe<H x ≤+100Oe, pulse current I x The value range is -19mA≤I x <-12mA and +12mA<H x ≤+19mA.

[0081] Example 6

[0082] A method for realizing a multi-state storage function by regulating exchange bias in two directions in a single magnetic heterojunction as described in Example 3, wherein a Hallbar structure with a length of 70 μm and a width of 5 μm is prepared by photolithography and argon ion etching, wherein the detection channel width of the Hall voltage is 2 μm, and the in-plane exchange bias and the out-of-plane exchange bias are set to different arrangements by simultaneously applying an external magnetic field and a pulse current, R H -I x The height of the loop will change with I x The strength of the current pulse increases gradually, so by controlling the amplitude of the applied current pulse, different spin alignment states of the CoPt / CoO interface can be obtained, corresponding to different residual Hall resistances. Figure 3 In this paper, it is demonstrated how to realize non-volatile ten-state memory by regulating the spin arrangement of CoPt / CoO interface at 200K. Specifically, it means:

[0083] A. Apply external magnetic field and current pulse at the same time, external magnetic field H x = +100Oe, current pulse I x = +19mA, making the magnetization state of the in-plane ferromagnetic layer along the +x direction, and the interface magnetic moment of the perpendicular ferromagnetic layer and the perpendicular antiferromagnetic layer along the +z direction; this "initial" state only needs to apply Ix = +19mA current pulse can be restored, and also provide a same initial state for each write operation. Figure 2 As shown in a. The coordinate system is Figure 1 As shown in b, the x direction is the length direction of the Hall bar, and the current is applied along this direction; the y direction is the width direction of the Hall bar, and the Hall voltage is detected along this direction; the z direction is the sample growth direction; +z is the direction from the substrate to the film, and -z is the direction from the film to the substrate.

[0084] B. After removing the external magnetic field and current pulse applied in step A, Figure 3 As shown in a, a current pulse I is applied x = +19mA, and change the write current pulse I x The pulse intensity makes I x In the range of -14mA to -19mA, the out-of-plane anomalous Hall curve (R H -H z Loop, R H is the Hall resistance, Hz is the magnetic field along the z direction), and a stable resistance state is obtained;

[0085] Repeat step B nine times, writing a current pulse I in each step B. x The pulse intensity is different, corresponding to ten stable resistance states. These ten residual magnetic states are used to represent 0 to 9 in decimal system, realizing non-volatile ten-state storage function.

[0086] When step B is performed for the first time, the first current pulse I is applied x =+19mA, that is, the first stable state is obtained. Each subsequent execution of step B will produce another stable state, and a total of ten stable states are obtained.

[0087] Such a ten-state memory can not only realize electrical "writing" and electrical "reading", but also these non-volatile states are highly stable and repeatable. Figure 3 As shown in b, when different sizes of I x The residual Hall resistance was directly detected, and each state was repeated 30 to 100 times. The high stability proves that the large current pulse in the heterojunction can effectively change the spin alignment state of the CoPt / CoO interface based on the spin-orbit moment effect. Due to the existence of the exchange bias effect, this interface spin alignment state remains unchanged during the entire Hall effect measurement process, indicating that the device has a strong ability to resist magnetic field interference.

[0088] In step A, the current pulse I x The interface magnetic moment between the perpendicular ferromagnetic layer and the perpendicular antiferromagnetic layer is set to the +z direction. Therefore, after removing the external magnetic field and current pulse applied in step A, a current pulse I in the negative direction needs to be applied.x (-14~-19mA) Set the interface magnetic moment between the perpendicular ferromagnetic layer and the perpendicular antiferromagnetic layer to the -z direction, and the current pulse I x The larger the value, the more the interface magnetic moments in the perpendicular ferromagnetic layer and the perpendicular antiferromagnetic layer will be set to the -z direction. It can be considered that the current pulse I x There is a one-to-one correspondence between the interface magnetic moments in the perpendicular ferromagnetic layer and the perpendicular antiferromagnetic layer set to the -z direction. This one-to-one correspondence is reflected in the different Hall resistances in the remanent state. For example, applying -14mA sets a small amount of magnetic moment to the -z direction, while -19mA sets most of the magnetic moment to the -z direction. In order to ensure that the starting point of this one-to-one correspondence is the same each time, a current pulse of +19mA needs to be applied, such as Figure 3 As shown in b.

[0089] The specific situation is similar to: applying -14mA, the corresponding Hall resistance is obtained (state 1); applying +19mA, returning to the initial state; applying -15mA again, another Hall resistance is obtained (state 2); applying +19mA, returning to the initial state; applying -16mA again, another Hall resistance is obtained (state 3). Because +19mA is applied each time, the starting point is the same, so only the corresponding current needs to be applied to obtain the corresponding states 1, 2, and 3. Figure 3 In b, each state from 0 to 9 was measured 30 or 100 times, with good repeatability.

[0090] Example 7

[0091] A method for controlling the exchange bias in two directions in a single magnetic heterojunction described in any one of Examples 1-3 to realize a spin logic function, wherein a Hallbar structure with a length of 70 μm and a width of 5 μm is prepared by photolithography and argon ion etching, wherein the detection channel width of the Hall voltage is 2 μm, specifically refers to:

[0092] ① Design a Hallbar device with two current channels and a shared voltage channel, the two current channels include a first channel and a second channel; Figure 4 As shown in Figure a, two Hallbars with the same current channel width of 5 μm are connected in parallel to form a composite device, in which the exchange bias direction in each Hall channel can be independently manipulated.

[0093] The present invention can artificially control the direction of the in-plane exchange bias in the first channel and the second channel, so the exchange bias of the first channel and the second channel can be set in opposite directions.

[0094] ② Simultaneously applying an external magnetic field and a current pulse to set the direction of the in-plane exchange bias in the first channel, and simultaneously applying an external magnetic field and a current pulse to set the direction of the in-plane exchange bias in the second channel;

[0095] The arrangement direction of the magnetic moments in the first channel and the second channel is controlled by controlling the direction of the in-plane exchange bias in the first channel and the second channel, as well as the size and direction of the input current pulse in the first channel and the second channel; specifically, when performing logic operations, first, the in-plane exchange bias in the first channel and the second channel is set to different configurations, and secondly, under zero magnetic field, different current pulses are input into the first channel and the second channel as logic inputs, and the Hall voltage or Hall resistance of the entire device is used as logic output to realize the spin logic function.

[0096] The material of the in-plane antiferromagnetic layer is IrMn, with a thickness of 8nm; the material of the perpendicular antiferromagnetic layer is CoO, with a thickness of 6nm; the material of the in-plane ferromagnetic layer is Co, with a thickness of 2nm; Co has in-plane magnetic anisotropy, forming an in-plane exchange bias at the IrMn / Co interface; the material of the perpendicular ferromagnetic layer is CoPt, with a thickness of 3.3nm; the CoPt alloy has perpendicular magnetic anisotropy, forming an out-of-plane exchange bias at the CoPt / CoO interface; the material of the non-magnetic layer is Ru, with a thickness of 0.8nm.

[0097] To set the exchange bias in a channel, apply H to the channel at the same time. x =±100Oe and I x = 19 mA current pulse can set the magnetic moment of the in-plane ferromagnetic layer Co in the channel to the applied H x The exchange bias field between the in-plane antiferromagnetic layer IrMn and the in-plane ferromagnetic layer Co also moves along the direction of the applied H x In this process, due to the key role of Joule heat in controlling the in-plane exchange bias, the magnetization state of the in-plane ferromagnetic layer Co in the other channel without the simultaneous application of the current pulse and the exchange bias between the in-plane antiferromagnetic layer IrMn and the in-plane ferromagnetic layer Co remain unchanged. Figure 4 As shown in b, if the magnetic moments of the in-plane ferromagnetic layer Co in the two current channels are arranged in opposite directions, then when the magnetic field is zero, the effective interlayer exchange coupling field felt by the perpendicular ferromagnetic layer CoPt is also opposite, resulting in the opposite polarity of the spin-orbit moment driving the magnetic moment reversal in the two channels (clockwise or counterclockwise reversal). During the logic operation, the input currents I1 and I2 are used as logic inputs (I = +18mA represents logic "1", I = -18mA represents logic "0"), and the Hall resistance of the composite device is used as the logic output. During the Hall resistance measurement process, I1 = I2 = 0.1mA. It should be noted that there are four arrangements of the magnetic moments of the two channels, namely up-up, up-down, down-up and down-down. Since the Hall resistance is proportional to the perpendicular component of the magnetic moment, both the up-down and up-down states give a Hall resistance close to zero. Therefore, define R H>0.1Ω and R H ≤0.1Ω as output logic "1" and "0".

[0098] Example 8

[0099] The difference between the method for realizing spin logic function by regulating exchange bias in two directions in a single magnetic heterojunction described in Example 7 is that:

[0100] The single magnetic heterojunction is the single magnetic heterojunction described in Example 3;

[0101] In step ②, the process of implementing the AND logic function is:

[0102] Apply an external magnetic field H to both the first channel and the second channel. x = +100Oe and current pulse I x = +19mA, the direction of the in-plane exchange bias and the in-plane ferromagnetic layer magnetization direction in the first channel and the second channel are both set to be along the +x direction; at this time, R H -I x The loop is reversed counterclockwise when a current pulse I is applied x = +18mA, the vertical ferromagnetic layer magnetic moment of a single channel is upward; when the current pulse I x =-18mA, the magnetic moment of the vertical ferromagnetic layer of a single channel is downward; when I1=I2=+18mA, that is, when both logic inputs are "1", I1 and I2 refer to the current pulses applied by the first channel and the second channel respectively, and the magnetization directions of the vertical ferromagnetic layers in the first channel and the second channel are both upward, and the corresponding logic output is "1", realizing the AND logic function. Figure 4 As shown in c.

[0103] Example 9

[0104] The difference between the method for realizing spin logic function by regulating exchange bias in two directions in a single magnetic heterojunction described in Example 7 is that:

[0105] The single magnetic heterojunction is the single magnetic heterojunction described in Example 3;

[0106] In step ②, the process of implementing the NOR logic function is:

[0107] Apply an external magnetic field H to both the first channel and the second channel. x = -100Oe and current pulse I x = +19 mA, the direction of the in-plane exchange bias and the in-plane ferromagnetic layer magnetization direction in the first channel and the second channel are both set to be along the -x direction; at this time, R H -I xThe loop is flipped clockwise when a current pulse I is applied x = +18mA, the vertical ferromagnetic layer magnetic moment of a single channel is downward; when the current pulse I x =-18mA, the magnetic moment of the vertical ferromagnetic layer of a single channel is upward; when I1=I2=-18mA, that is, when both logic inputs are "1", I1 and I2 refer to the current pulses applied by the first channel and the second channel respectively, and the magnetization directions of the vertical ferromagnetic layers in the first channel and the second channel are both upward, and the corresponding logic output is "1", realizing the NOR logic function. Figure 4 As shown in middle d.

[0108] Example 10

[0109] The difference between the method for realizing spin logic function by regulating exchange bias in two directions in a single magnetic heterojunction described in Example 7 is that:

[0110] The single magnetic heterojunction is the single magnetic heterojunction described in Example 3;

[0111] In step ②, the process of implementing the NIMP logic function is:

[0112] Apply an external magnetic field H to the first channel. x = +100Oe and current pulse I1 = +19mA, the direction of the in-plane exchange bias in the first channel and the in-plane ferromagnetic layer magnetization direction are both set along the +x direction;

[0113] Apply an external magnetic field H to the second channel. x = -100 Oe and current pulse I2 = +19 mA, the direction of the in-plane exchange bias in the second channel and the in-plane ferromagnetic layer magnetization direction are both set along the -x direction;

[0114] At this time, R in the first channel H -I x The loop is flipped counterclockwise. When the current pulse I1 = +18mA is applied, the magnetic moment of the perpendicular ferromagnetic layer of the first channel is upward. When the current pulse I1 = -18mA is applied, the magnetic moment of the perpendicular ferromagnetic layer of the first channel is downward.

[0115] R in the second channel H -I x The loop is flipped clockwise. When the current pulse I2 = +18mA is applied, the magnetic moment of the perpendicular ferromagnetic layer of the second channel is downward. When the current pulse I2 = -18mA is applied, the magnetic moment of the perpendicular ferromagnetic layer of the second channel is upward.

[0116] Therefore, when the input in the first channel is "1" (i.e., I1 = +18 mA) and the input in the second channel is "0" (i.e., I2 = -18 mA), the magnetization direction of the perpendicular ferromagnetic layer in both the first and second channels is upward, and the corresponding logic output is "1", realizing the NIMP logic function. Figure 4 As shown in figure e.

[0117] Embodiment 11

[0118] The difference between the method for realizing spin logic function by regulating exchange bias in two directions in a single magnetic heterojunction described in Example 7 is that:

[0119] The single magnetic heterojunction is the single magnetic heterojunction described in Example 3;

[0120] In step ②, the process of implementing the Converse NIMP logic function is:

[0121] Apply an external magnetic field H to the first channel. x = -100 Oe and current pulse I1 = +19 mA, the direction of the in-plane exchange bias in the first channel and the in-plane ferromagnetic layer magnetization direction are both set along the -x direction;

[0122] Apply an external magnetic field H to the second channel. x = +100Oe and current pulse I2 = +19mA, the direction of the in-plane exchange bias in the second channel and the in-plane ferromagnetic layer magnetization direction are both set along the +x direction;

[0123] At this time, R in the first channel H -I x The loop is flipped clockwise. When the current pulse I1 = +18mA is applied, the magnetic moment of the perpendicular ferromagnetic layer of the first channel is downward. When the current pulse I1 = -18mA is applied, the magnetic moment of the perpendicular ferromagnetic layer of the first channel is upward.

[0124] R in the second channel H -I x The loop is flipped counterclockwise. When the current pulse I2 = +18mA is applied, the magnetic moment of the perpendicular ferromagnetic layer of the second channel is upward. When the current pulse I2 = -18mA is applied, the magnetic moment of the perpendicular ferromagnetic layer of the first channel is downward.

[0125] Therefore, when the input in the first channel is "0" i.e. I1 = -18mA and the input in the second channel is "1" i.e. I2 = +18mA, the magnetization direction of the perpendicular ferromagnetic layer in both the first channel and the second channel is upward, and the corresponding logic output is "1", realizing the Converse NIMP logic function, such as Figure 4 As shown in figure f.

[0126] Figure 4This is a schematic diagram of realizing logic functions by regulating exchange bias at room temperature 300K.

[0127] The above are application examples of the present invention. It should be pointed out that several improvements can be made without departing from the principles of the present invention, such as changes in the film structure, changes in the Hallbar structure, etc. These improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A single magnetic heterojunction structure having both in-plane and out-of-plane exchange bias effects, characterized in that: From bottom to top, it includes a substrate, an in-plane antiferromagnetic layer, an in-plane ferromagnetic layer, a non-magnetic layer, a perpendicular ferromagnetic layer, and a perpendicular antiferromagnetic layer; the in-plane ferromagnetic layer and the perpendicular ferromagnetic layer are coupled together through the non-magnetic layer in the middle; there is an in-plane exchange bias between the in-plane ferromagnetic layer and the in-plane antiferromagnetic layer, that is, an in-plane exchange bias, and there is an out-of-plane exchange bias between the perpendicular ferromagnetic layer and the perpendicular antiferromagnetic layer.

2. A single magnetic heterojunction structure having both in-plane and out-of-plane exchange bias effects according to claim 1, characterized in that: The in-plane antiferromagnetic layer is any antiferromagnetic material selected from IrMn, PtMn, PdMn, FeMn, CrMn, NiMn, NiO, CoO, MnO, FeO, and Fe2O3; the perpendicular antiferromagnetic layer is any antiferromagnetic material selected from IrMn, PtMn, PdMn, FeMn, CrMn, NiMn, NiO, CoO, MnO, FeO, and Fe2O3; the in-plane ferromagnetic layer is a ferromagnetic material having in-plane magnetic anisotropy, which is Co, Any one of Fe, Ni, CoFe, CoFeB, CoNi, NiFe, CoPt, CoTb, and FePt; the perpendicular ferromagnetic layer is a ferromagnetic material with perpendicular magnetic anisotropy, and is any one of Co, Fe, Ni, CoFe, CoFeB, CoNi, NiFe, CoPt, CoTb, and FePt; the non-magnetic layer is any one of Ta, Ru, Gd, Ti, W, Cr, Cu, Hf, Mo, Pd, Au, and Pt.

3. A single magnetic heterojunction structure having both in-plane and out-of-plane exchange bias effects according to claim 1, characterized in that: The thickness of the in-plane antiferromagnetic layer is 1-20nm; the thickness of the perpendicular antiferromagnetic layer is 1-20nm; the thickness of the in-plane ferromagnetic layer is 0.5-10nm; the thickness of the perpendicular ferromagnetic layer is 0.5-10nm; and the thickness of the non-magnetic layer is 0.3-3nm.

4. A single magnetic heterojunction structure having both in-plane and out-of-plane exchange bias effects according to claim 3, characterized in that: The material of the in-plane antiferromagnetic layer is IrMn, with a thickness of 8nm; the material of the perpendicular antiferromagnetic layer is CoO, with a thickness of 6nm; the material of the in-plane ferromagnetic layer is Co, with a thickness of 2nm; the material of the perpendicular ferromagnetic layer is CoPt, with a thickness of 3.3nm; the material of the non-magnetic layer is Ru, with a thickness of 0.8nm.

5. A method for controlling exchange bias in two directions in a single magnetic heterojunction structure according to any one of claims 1 to 4 to realize a multi-state storage function, characterized in that: Specifically: (1) Applying an external magnetic field and a current pulse simultaneously to set the in-plane exchange bias to a specific direction; (2) Only current pulses are applied without applying an external magnetic field, and the direction of the in-plane exchange bias is not changed. The spin-orbit moment effect is used to regulate the exchange bias in the vertical direction to achieve multi-state storage. Specifically, it means: by controlling the amplitude of the applied current pulse, the spin arrangement at the interface of the perpendicular ferromagnetic layer and the perpendicular antiferromagnetic layer is regulated. Different spin arrangements correspond to different Hall resistances. Different Hall resistance states are used to store different information, thereby achieving a multi-state storage function.

6. The method for realizing a polymorphic storage function by regulating two-way exchange bias according to claim 5, characterized in that: In step (1), the value range of the external magnetic field Hx is -1000Oe<Hx<-50Oe and +50Oe<Hx<+1000Oe, the value range of the pulse current Ix is -20mA<Ix<-10mA and +10mA<Hx<+20mA, and the pulse current density is 10 6 ~10 7 A / cm 2 , Hx and Ix are both set along the length direction of the Hall bar; By applying an external magnetic field and a pulse current simultaneously, the in-plane exchange bias and the out-of-plane exchange bias are set to different arrangements to achieve a non-volatile ten-state storage function, specifically: A. Apply an external magnetic field and a current pulse at the same time, the external magnetic field Hx = +100Oe, the current pulse Ix = +19mA, so that the magnetization state of the in-plane ferromagnetic layer is along the +x direction, and the interface magnetic moment of the perpendicular ferromagnetic layer and the perpendicular antiferromagnetic layer is along the +z direction; the x direction is the length direction of the Hall bar, and the current is applied along this direction; the y direction is the width direction of the Hall bar, and the Hall voltage is detected along this direction; the z direction is the sample growth direction; B. After removing the external magnetic field and current pulse applied in step A, a current pulse Ix=+19mA is applied, and the pulse intensity of the write current pulse Ix is changed so that Ix is in the range of -14mA to -19mA, and the out-of-plane anomalous Hall curve is measured to obtain a stable resistance state; Repeat step B nine times, each time the pulse intensity of the current pulse Ix written in step B is different, correspondingly obtaining ten stable resistance states, and these ten residual magnetic states are used to represent 0 to 9 in decimal, realizing a non-volatile ten-state storage function.

7. The method for realizing a polymorphic storage function by regulating two-way exchange bias according to claim 6, characterized in that: In step (1), the value range of the external magnetic field Hx is -100Oe≤Hx<-50Oe and +50Oe<Hx≤+100Oe, and the value range of the pulse current Ix is -19mA≤Ix<-12mA and +12mA<Hx≤+19mA.

8. A method for controlling exchange bias in two directions in a single magnetic heterojunction structure according to any one of claims 1 to 4 to realize spin logic function, characterized in that: Specifically: ① Design a Hallbar device having two current channels and sharing one voltage channel, wherein the two current channels include a first channel and a second channel; ② Simultaneously applying an external magnetic field and a current pulse to set the direction of the in-plane exchange bias in the first channel, and simultaneously applying an external magnetic field and a current pulse to set the direction of the in-plane exchange bias in the second channel; The arrangement direction of the magnetic moments in the first channel and the second channel is controlled by controlling the direction of the in-plane exchange bias in the first channel and the second channel, as well as the size and direction of the input current pulse in the first channel and the second channel; specifically, when performing logic operations, first, the in-plane exchange bias in the first channel and the second channel is set to different configurations, and secondly, under zero magnetic field, different current pulses are input into the first channel and the second channel as logic inputs, and the Hall voltage or Hall resistance of the entire device is used as logic output to realize the spin logic function.

9. The method for realizing spin logic function by regulating exchange bias in two directions according to claim 8, characterized in that: In step ②, the process of implementing the AND logic function is: An external magnetic field Hx = +100 Oe and a current pulse Ix = +19 mA are applied to both the first channel and the second channel, and the directions of the in-plane exchange bias and the magnetization directions of the in-plane ferromagnetic layers in the first channel and the second channel are set to be along the +x direction; at this time, R H - The Ix loop is flipped counterclockwise. When the current pulse Ix = +18mA is applied, the magnetic moment of the vertical ferromagnetic layer of a single channel is upward. When the current pulse Ix=-18mA is applied, the magnetic moment of the perpendicular ferromagnetic layer of a single channel is downward; when I1=I2=+18mA, that is, when both logic inputs are "1", I1 and I2 refer to the current pulses applied by the first channel and the second channel respectively, and the magnetization directions of the perpendicular ferromagnetic layers in the first channel and the second channel are both upward, and the corresponding logic output is "1", realizing the AND logic function.

10. The method for realizing spin logic function by regulating exchange bias in two directions according to claim 8, characterized in that: In step ②, the process of implementing the NOR logic function is: An external magnetic field Hx = -100 Oe and a current pulse Ix = +19 mA are applied to both the first channel and the second channel, and the directions of the in-plane exchange bias and the magnetization directions of the in-plane ferromagnetic layers in the first channel and the second channel are set to be along the -x direction; at this time, R H -Ix loop is flipped clockwise. When the current pulse Ix = +18mA is applied, the vertical ferromagnetic layer magnetic moment of a single channel is downward; when the current pulse Ix = -18mA is applied, the vertical ferromagnetic layer magnetic moment of a single channel is upward. When I1=I2=-18mA, that is, when both logic inputs are "1", I1 and I2 refer to the current pulses applied by the first channel and the second channel respectively. The magnetization directions of the perpendicular ferromagnetic layers in the first channel and the second channel are both upward, and the corresponding logic output is "1", realizing the NOR logic function.

11. The method for realizing spin logic function by regulating exchange bias in two directions according to claim 8, characterized in that: In step ②, the process of implementing the NIMP logic function is: An external magnetic field Hx = +100 Oe and a current pulse I1 = +19 mA are applied to the first channel, and the direction of the in-plane exchange bias and the in-plane magnetization direction of the ferromagnetic layer in the first channel are both set to be along the +x direction; Apply an external magnetic field Hx = -100 Oe and a current pulse I2 = +19 mA to the second channel, and the direction of the in-plane exchange bias and the in-plane magnetization direction of the ferromagnetic layer in the second channel are both set to be along the -x direction; At this time, R in the first channel H -Ix loop is counterclockwise flipped. When the current pulse I1 = +18mA is applied, the vertical ferromagnetic layer magnetic moment of the first channel is upward. When the current pulse I1 = -18mA is applied, the vertical ferromagnetic layer magnetic moment of the first channel is downward. R in the second channel H -Ix loop is flipped clockwise. When the current pulse I2 = +18mA is applied, the magnetic moment of the perpendicular ferromagnetic layer of the second channel is downward. When the current pulse I2 = -18mA is applied, the magnetic moment of the perpendicular ferromagnetic layer of the second channel is upward. Therefore, when the input in the first channel is "1", i.e., I1 = +18 mA, and the input in the second channel is "0", i.e., I2 = -18 mA, the magnetization directions of the perpendicular ferromagnetic layers in both the first channel and the second channel are upward, and the corresponding logic output is "1", realizing the NIMP logic function.

12. The method for realizing spin logic function by regulating exchange bias in two directions according to claim 8, characterized in that: In step ②, the process of implementing the Converse NIMP logic function is: Apply an external magnetic field Hx = -100 Oe and a current pulse I1 = +19 mA to the first channel, and the direction of the in-plane exchange bias and the in-plane magnetization direction of the ferromagnetic layer in the first channel are both set to be along the -x direction; Apply an external magnetic field Hx = +100 Oe and a current pulse I2 = +19 mA to the second channel, and the direction of the in-plane exchange bias and the in-plane magnetization direction of the ferromagnetic layer in the second channel are both set to be along the +x direction; At this time, R in the first channel H -Ix loop is flipped clockwise. When the current pulse I1=+18mA is applied, the vertical ferromagnetic layer magnetic moment of the first channel is downward. When the current pulse I1=-18mA is applied, the vertical ferromagnetic layer magnetic moment of the first channel is upward. R in the second channel H -Ix loop is reversed counterclockwise. When the current pulse I2 = +18mA is applied, the magnetic moment of the perpendicular ferromagnetic layer of the second channel is upward. When the current pulse I2 = -18mA is applied, the magnetic moment of the perpendicular ferromagnetic layer of the first channel is downward. Therefore, when the input in the first channel is "0", i.e., I1 = -18 mA, and the input in the second channel is "1", i.e., I2 = +18 mA, the magnetization directions of the perpendicular ferromagnetic layers in both the first and second channels are upward, and the corresponding logic output is "1", realizing the ConverseNIMP logic function.

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