Data storage method of solid state hard disk, solid state hard disk and terminal device

Abstract

The embodiment of the present application provides a data storage method of a solid-state hard disk, a solid-state hard disk and a terminal device, wherein the method includes: determining a target storage unit from a solid-state hard disk, the number of error bits of the target storage unit is less than a preset threshold, and the preset threshold is less than the error bit setting value in the original factory screening rule; storing data in the target storage unit. In this way, by determining a target storage unit in which the number of error bits in the solid-state hard disk is less than the preset threshold, the quality of the target storage unit is ensured to be reliable, and the data is stored in the target storage unit, thereby improving the security of storing preset data and improving the data storage reliability of the solid-state hard disk.

Description

Technical Field

[0001] The present application relates to the field of storage technology, and in particular to a data storage method for a solid-state hard disk, a solid-state hard disk, and a terminal device. Background Art

[0002] After receiving data, the existing non-volatile memory express (NVME) solid state disk (SSD) usually selects a certain data block to save separately for the designated important image data. The data block is the data storage flash memory (NAND Flash) operation unit, but the NAND Flash medium is a wear-and-tear type of material, and after the original factory production, the NAND Flash has bad blocks and unstable blocks. If the selected data block has quality problems, it is very likely that the designated data will be lost, resulting in low data storage reliability of the existing non-volatile solid state disk. Summary of the invention

[0003] In order to solve the above technical problems, the embodiments of the present application provide a data storage method of a solid state drive, a solid state drive, and a terminal device.

[0004] In a first aspect, an embodiment of the present application provides a method for storing data in a solid state drive, the method comprising:

[0005] Determine a target storage unit from the solid state drive, wherein the number of error bits of the target storage unit is less than a preset threshold, and the preset threshold is less than the error bit setting value in the original factory screening rule;

[0006] The data is stored in the target storage unit.

[0007] In a second aspect, an embodiment of the present application provides a solid-state hard disk, including a target storage unit, wherein the number of error bits of the target storage unit is less than a preset threshold, and the preset threshold is less than the error bit setting value in the original factory screening rule.

[0008] In a third aspect, an embodiment of the present application provides a terminal device, including a memory and a processor, wherein the memory is used to store a computer program, and the computer program executes the data storage method of the solid-state hard disk provided in the first aspect when the processor is running.

[0009] In a fourth aspect, an embodiment of the present application provides a computer-readable storage medium storing a computer program, which, when running on a processor, executes the data storage method for a solid-state hard disk provided in the first aspect.

[0010] The data storage method, solid-state hard disk and terminal device provided by the present application above determine a target storage unit from the solid-state hard disk, the number of error bits of the target storage unit is less than a preset threshold, and the preset threshold is less than the error bit setting value in the original factory screening rule; and store data in the target storage unit. In this way, by determining the target storage unit in the solid-state hard disk with the number of error bits less than the preset threshold, the quality of the target storage unit is ensured to be reliable, and the data is stored in the target storage unit, thereby improving the security of the stored data and improving the data storage reliability of the solid-state hard disk. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] In order to more clearly illustrate the technical solution of the present application, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present application and should not be regarded as limiting the scope of protection of the present application. In each of the drawings, similar components are numbered similarly.

[0012] Figure 1 A schematic diagram of a process of a data storage method of a solid state drive provided by an embodiment of the present application is shown;

[0013] Figure 2 A schematic diagram of the structure of a target storage unit provided by an embodiment of the present application is shown;

[0014] Figure 3 A schematic diagram of a process of determining a target storage unit of a solid state drive provided in an embodiment of the present application is shown. DETAILED DESCRIPTION

[0015] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0016] The components of the embodiments of the present invention generally described and shown in the drawings herein may be arranged and designed in a variety of different configurations. Therefore, the following detailed description of the embodiments of the present invention provided in the drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0017] Hereinafter, the terms "including", "having" and their cognates, which may be used in various embodiments of the present invention, are intended only to indicate specific features, numbers, steps, operations, elements, components or combinations of the foregoing items, and should not be understood as first excluding the existence of one or more other features, numbers, steps, operations, elements, components or combinations of the foregoing items or adding the possibility of one or more features, numbers, steps, operations, elements, components or combinations of the foregoing items.

[0018] Furthermore, the terms “first”, “second”, “third”, etc. are merely used for distinguishing descriptions and are not to be understood as indicating or implying relative importance.

[0019] Unless otherwise defined, all terms (including technical terms and scientific terms) used herein have the same meanings as those generally understood by those skilled in the art to which the various embodiments of the present invention belong. The terms (such as those defined in generally used dictionaries) will be interpreted as having the same meanings as the contextual meanings in the relevant technical field and will not be interpreted as having idealized meanings or overly formal meanings unless clearly defined in the various embodiments of the present invention.

[0020] Example 1

[0021] The embodiment of the present disclosure provides a data storage method of a solid state drive.

[0022] For details, see Figure 1 The data storage method of the solid state drive provided by the embodiment of the present disclosure includes:

[0023] Step S101, determining a target storage unit from a solid state drive, wherein the number of error bits of the target storage unit is less than a preset threshold, and the preset threshold is less than an error bit setting value in the original factory screening rule.

[0024] In this embodiment, the solid state drive can be a non-volatile solid state drive, which is not limited here. Generally speaking, the solid state drive will set the corresponding original factory screening rules when it leaves the factory, set the corresponding predetermined mark for the bad block, or set the corresponding predetermined mark for the good block. The bad block of the non-volatile solid state drive can be determined according to the predetermined mark of the designated address of the non-volatile solid state drive scanned. For example, the predetermined mark can be set to FFh mark, and the designated address of the non-volatile solid state drive is scanned to see if there is an FFh mark. If there is an FFh mark, it means that the designated address is a good block. The original factory screening rules include error bit setting values. In consideration of saving resources or other reasons, the error bit setting values ​​of the general original factory screening rules are relatively large, and the reliability of data storage cannot be ensured. In this embodiment, the number of error bits of the selected target storage unit is less than the preset threshold, and the preset threshold is less than the error bit setting value in the original factory screening rules, so that the number of error bits of the target storage unit is relatively small, which can ensure the reliability of the target storage unit.

[0025] Step S102, storing the data into the target storage unit.

[0026] In this embodiment, since the number of error bits of the target storage unit is relatively small, the reliability of the target storage unit can be ensured, and storing data in the target storage unit can improve the security and reliability of data storage.

[0027] In this embodiment, step S101 may include the following steps:

[0028] The target storage unit is determined from the solid state drive according to the dislocation screening principle.

[0029] In this embodiment, the solid-state drive may include different logical units (die) and different planes. To ensure data security, according to the principle of dislocation screening, target storage units are selected through different dies and different planes, and data is double-backed up through at least two selected target storage units to improve data security.

[0030] Specifically, determining the target storage unit from the solid state drive according to the dislocation screening principle includes:

[0031] Determine a first candidate block group from the solid state drive that satisfies the requirement that the number of error bits is less than the error bit setting value;

[0032] Performing a control operation on the first candidate block group under a preset test condition to obtain a control operation result corresponding to the first candidate block group, and determining a second candidate block group having a number of error bits less than or equal to a preset threshold from the first candidate block group according to the control operation result;

[0033] Determine at least two storage units located in different logical units or on different surfaces of the same logical unit from the second candidate block group;

[0034] The at least two storage units are used as the target storage units.

[0035] In this embodiment, the solid state drive may have an impact on the quality of the hard disk at different temperatures and voltages, and the preset test conditions may include temperature test conditions and / or voltage test conditions. The preset threshold value is related to the model of the solid state drive and can be obtained through experiments or customized by the tester.

[0036] In this embodiment, the management and control operation refers to various editing and processing operations on the solid-state hard disk. Specifically, the management and control operation includes at least one of the following: single-sided erasing, single-sided read and write operations, multi-sided erasing, and multi-sided read and write operations.

[0037] In this way, by performing reliability selection on the target storage unit of the solid state drive under preset test conditions, the stability and reliability of the target storage unit can be guaranteed from the source.

[0038] See also Figure 2 , the second candidate block group 20 includes the first logical unit die 0, the second logical unit die 1, and the third logical unit die 2, each logical unit includes plane 0 and plane 1, plane 0 includes blocks block 0, block 2, block 4, block 6, block 8, and block 10, and plane 1 includes blocks block 1, block 3, block 5, block 7, block 9, and block 11. Block block 6 on plane 0 of the first logical unit die 0 and block block 11 on plane 1 of the third logical unit die 2 can be selected as target storage units for storing preset data by the dislocation screening principle.

[0039] Please refer again Figure 2 , the block block4 on plane0 of the first logical unit die 0 and the block block9 on plane1 of the first logical unit die 0 can be selected as the target storage unit for storing preset data through the dislocation screening principle. The data stored in the block block4 on plane0 of the first logical unit die 0 can be the same as the data stored in the block block9 on plane1 of the first logical unit die 0, which plays the role of double backup data and ensures data security.

[0040] It should be supplemented that the preset test condition may include a temperature test condition or a voltage test condition, and the preset threshold value includes a temperature test preset threshold value or a voltage test preset threshold value; in this embodiment, the step of performing a control operation on the first candidate block group under the preset test condition to obtain a control operation result corresponding to the first candidate block group, and determining a second candidate block group having a number of error bits less than or equal to the preset threshold value from the first candidate block group according to the control operation result may include the following steps:

[0041] Under the temperature test condition or the voltage test condition, the control operation is performed on the first candidate block group to obtain a first control operation result corresponding to the first candidate block group, and a second candidate block group having a number of error bits less than or equal to the temperature test preset threshold or the voltage test preset threshold is determined from the first candidate block group according to the first control operation result.

[0042] In this embodiment, the management operation includes at least one of the following: single-side erasing, single-side read-write operation, multi-side erasing, and multi-side read-write operation.

[0043] In this embodiment, in order to test the results under different temperature scenarios, the temperature test conditions may include high temperature test conditions, normal temperature test conditions and low temperature test conditions, and the voltage test conditions may be set to a voltage deviation test, which can also be understood as a condition in which the voltage deviation is set to an abnormal working voltage for testing.

[0044] In this embodiment, the temperature test preset threshold value or the voltage test preset threshold value is related to the model of the solid state drive, and can be obtained through experiments or customized by a tester.

[0045] In this embodiment, by performing control operations under temperature test conditions or voltage test conditions, the second candidate block group is determined based on the first control operation result corresponding to the first candidate block group, which can effectively ensure that the second candidate block group can have better quality assurance and improve the security of data storage.

[0046] It is further supplemented that the preset test condition includes a temperature test condition and a voltage test condition, and the preset threshold includes a temperature test preset threshold and a voltage test preset threshold; in this embodiment, the step of performing a control operation on the first candidate block group under the preset test condition to obtain a control operation result corresponding to the first candidate block group, and determining a second candidate block group having a number of error bits less than or equal to the preset threshold from the first candidate block group according to the control operation result may include the following steps:

[0047] Under the temperature test condition, performing the control operation on the first candidate block group to obtain a first control operation result corresponding to the first candidate block group, and determining a target block group having a number of error bits less than or equal to a preset threshold value of the temperature test from the first candidate block group according to the first control operation result;

[0048] Under the voltage test condition, performing the control operation on the target block group to obtain a second control operation result corresponding to the target block group;

[0049] The second candidate block group having the number of error bits less than or equal to the voltage test preset threshold is determined from the target block group according to the second control operation result.

[0050] In this embodiment, control operations are performed under temperature test conditions and voltage test conditions, and the second candidate block group finally selected is blocks with reliable quality under temperature test conditions and voltage test conditions, which can effectively improve the quality of the blocks and improve the security of data storage.

[0051] In this embodiment, since it is necessary to comprehensively consider the test results of the blocks of the solid state drive at different temperatures, the temperature test conditions can be set to high temperature test conditions, normal temperature test conditions and low temperature test conditions for joint testing. Specifically, the following steps are included:

[0052] Under the first temperature test condition, performing the control operation on the first candidate block group to obtain a control operation result at the first temperature corresponding to the first candidate block group, and determining a first block group having a number of error bits less than or equal to a preset threshold value of the first temperature test from the first candidate block group according to the control operation result at the first temperature;

[0053] Under the second temperature test condition, performing the control operation on the first block group to obtain the control operation result at the second temperature corresponding to the first block group, and determining a second block group having a number of error bits less than or equal to a preset threshold value of the second temperature test from the first block group according to the control operation result at the second temperature;

[0054] Under the third temperature test condition, the control operation is performed on the second block group to obtain the control operation result at the third temperature corresponding to the second block group, and a target block group having a number of error bits less than or equal to a preset threshold value of the third temperature test is determined from the second block group according to the control operation result at the third temperature;

[0055] The temperature of the first temperature test condition is lower than the temperature of the second temperature test condition, and the temperature of the first temperature test condition is higher than the temperature of the third temperature test condition.

[0056] In this embodiment, the first temperature test condition may be equivalent to the normal temperature test condition, the second temperature test condition may be equivalent to the high temperature test condition, and the third temperature test condition may be equivalent to the low temperature test condition. For example, the temperature of the first temperature test condition may be set to 20-30 degrees, the temperature of the second temperature test condition may be set to 40-50 degrees, and the temperature of the third temperature test condition may be set to 0-10 degrees, which is not limited here.

[0057] For ease of understanding, the following Figure 3 A detailed description of the data storage method of the solid state drive is provided. For a solid state drive, the original bad blocks are first selected. Specifically, the original factory bad blocks of the solid state drive are removed according to the preset bad block screening rules to obtain the block group BlockGroupA.

[0058] Then, normal temperature selection is performed. Specifically, single-sided erasing, single-sided writing, single-sided reading, double-sided erasing, double-sided writing, and double-sided reading are performed on the block group BlockGroupA under normal temperature test conditions, and the number of error bits of the corresponding blocks in the block group BlockGroupA is detected, and the blocks with the number of error bits in the block group BlockGroupA less than or equal to the preset threshold a are screened out to form the block group BlockGroupB, and the blocks with the number of error bits in the block group BlockGroupA greater than the preset threshold a are eliminated. Among them, the preset threshold a can be configured according to the analysis of different particle characteristics of the solid-state drive.

[0059] Then, high-temperature selection is performed. Specifically, single-sided erasing, single-sided writing, single-sided reading, double-sided erasing, double-sided writing, and double-sided reading are performed on the block group BlockGroupB under high-temperature test conditions, and the number of error bits of the corresponding blocks in the block group BlockGroupB is detected, and the blocks with the number of error bits in the block group BlockGroupB less than or equal to the preset threshold value b are selected to form the block group BlockGroupC, and the blocks with the number of error bits in the block group BlockGroupB greater than the preset threshold value b are eliminated. Among them, the preset threshold value b can be configured according to the analysis of different particle characteristics of the solid-state drive.

[0060] Then, low-temperature selection is performed. Specifically, single-sided erasing, single-sided writing, single-sided reading, double-sided erasing, double-sided writing, and double-sided reading are performed on the block group BlockGroupC under low-temperature test conditions, and the number of error bits of the corresponding blocks in the block group BlockGroupC is detected, and the blocks with the number of error bits in the block group BlockGroupC less than or equal to the preset threshold value c are selected to form the block group BlockGroupD, and the blocks with the number of error bits in the block group BlockGroupC greater than the preset threshold value c are eliminated. Among them, the preset threshold value c can be configured according to the analysis of different particle characteristics of the solid-state drive.

[0061] Then, voltage bias selection is performed. Specifically, single-sided erasing, single-sided writing, single-sided reading, double-sided erasing, double-sided writing, and double-sided reading are performed on the block group BlockGroupD under voltage test conditions, and the number of error bits of the corresponding blocks in the block group BlockGroupD is detected, and the blocks with the number of error bits in the block group BlockGroupD less than or equal to the preset threshold d are screened out to form the block group BlockGroupE, and the blocks with the number of error bits in the block group BlockGroupD greater than the preset threshold d are eliminated. Among them, the preset threshold d can be configured according to the analysis of different particle characteristics of the solid-state drive.

[0062] Finally, the dislocation selection is performed. Specifically, for the block group BlockGroupE, separation selection is performed according to the dislocation selection principle, and blocks (blocks) under different logical units (die) and different planes (plane) are selected to form a pair of backup blocks (blockbackgroup). For example, please refer again Figure 2 , determine block 4 on plane 0 of the first logic unit die 0 and block 9 on plane 1 of the first logic unit die 0 as the target storage unit for storing data. In this way, data in the same logic unit and the same plane are prevented from interfering with each other, thereby causing data loss. In this way, it can be ensured that the selected blocks can be normally erased, written, and read at normal temperature, low temperature, high temperature, and voltage bias, and it can be ensured that the selected blocks will not appear in the same logic unit or the same plane. The selected blocks can be backed up for data, avoiding the risk of data loss, and improving the data storage security of the solid-state drive.

[0063] The data storage method, solid-state hard disk and terminal device provided by the present application determine a target storage unit from the solid-state hard disk, the number of error bits of the target storage unit is less than a preset threshold, and the preset threshold is less than the error bit setting value in the original factory screening rule; and store data in the target storage unit. In this way, by determining the target storage unit in the solid-state hard disk with the number of error bits less than the preset threshold, the quality of the target storage unit is ensured to be reliable, and the data is stored in the target storage unit, thereby improving the security of the stored data and improving the data storage reliability of the solid-state hard disk.

[0064] Example 2

[0065] In addition, an embodiment of the present disclosure provides a solid state drive, including a target storage unit, wherein the number of error bits of the target storage unit is less than a preset threshold, and the preset threshold is less than the error bit setting value in the original factory screening rule.

[0066] It should be understood that the target storage unit in the solid state drive provided in this embodiment can be obtained according to the determination process of the target storage unit provided in Example 1. For related descriptions, please refer to the contents of Example 1. To avoid repetition, it will not be described here.

[0067] Example 3

[0068] In addition, an embodiment of the present disclosure provides a terminal device, including a memory and a processor, wherein the memory stores a computer program, and when the computer program runs on the processor, the data storage method of the solid state drive provided in the above-mentioned embodiment 1 is executed.

[0069] It should be understood that the terminal device provided in this embodiment can implement the data storage method of the solid state hard disk provided in Example 1. For related descriptions, please refer to the content of Example 1. To avoid repetition, it will not be repeated here.

[0070] Example 4

[0071] In addition, an embodiment of the present disclosure provides a computer-readable storage medium, including a memory and a processor, wherein the memory stores a computer program, and when the computer program runs on the processor, the data storage method of the solid state drive provided in the above-mentioned embodiment 1 is executed.

[0072] It should be understood that the computer-readable storage medium provided in this embodiment can implement the data storage method of the solid-state hard disk provided in Example 1. For related descriptions, please refer to the content of Example 1. To avoid repetition, it will not be repeated here.

[0073] In several embodiments provided in the present application, it should be understood that the disclosed devices and methods can also be implemented in other ways. The device embodiments described above are merely schematic. For example, the flowcharts and structure diagrams in the accompanying drawings show the possible architecture, functions and operations of the devices, methods and computer program products according to multiple embodiments of the present invention. In this regard, each box in the flowchart or block diagram can represent a module, a program segment or a part of a code, and the module, a program segment or a part of a code contains one or more executable instructions for implementing the specified logical function. It should also be noted that in an alternative implementation, the functions marked in the box can also occur in a different order from the order marked in the accompanying drawings. For example, two consecutive boxes can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the structure diagram and / or the flow chart, and the combination of boxes in the structure diagram and / or the flow chart, can be implemented with a dedicated hardware-based system that performs a specified function or action, or can be implemented with a combination of dedicated hardware and computer instructions.

[0074] In addition, the functional modules or units in the various embodiments of the present invention may be integrated together to form an independent part, or each module may exist independently, or two or more modules may be integrated to form an independent part.

[0075] If the functions are implemented in the form of software function modules and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art or the part of the technical solution, can be embodied in the form of a software product, which is stored in a storage medium and includes several instructions for a computer device (which can be a smart phone, a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the methods described in each embodiment of the present invention. The aforementioned computer-readable storage medium includes: various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk.

[0076] The above description is only a specific implementation mode of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A data storage method for a solid state hard disk, characterized in that: The method comprises: Determine a target storage unit from the solid-state hard disk according to the misalignment screening principle, wherein the target storage unit is at least two storage units located in different logical units or located on different surfaces of the same logical unit; the number of error bits of the target storage unit is less than a preset threshold, and the preset threshold is less than the error bit setting value in the original factory screening rule; Storing the data in at least two of the target storage units for double data backup; The step of determining a target storage unit from the solid state drive according to the dislocation screening principle includes: Determine a first candidate block group from the solid state drive that satisfies the requirement that the number of error bits is less than the error bit setting value; Performing a control operation on the first candidate block group under a preset test condition to obtain a control operation result corresponding to the first candidate block group, and determining a second candidate block group having a number of error bits less than or equal to a preset threshold from the first candidate block group according to the control operation result; Determine, from the second candidate block group, the at least two storage units located in different logical units or located on different surfaces of the same logical unit; The at least two storage units are used as the target storage units.

2. The method according to claim 1, characterized in that The preset test condition includes a temperature test condition or a voltage test condition, and the preset threshold includes a temperature test preset threshold or a voltage test preset threshold; The step of performing a control operation on the first candidate block group under a preset test condition to obtain a control operation result corresponding to the first candidate block group, and determining a second candidate block group having a number of error bits less than or equal to the preset threshold from the first candidate block group according to the control operation result includes: Under the temperature test condition or the voltage test condition, the control operation is performed on the first candidate block group to obtain a first control operation result corresponding to the first candidate block group, and a second candidate block group having a number of error bits less than or equal to the temperature test preset threshold or the voltage test preset threshold is determined from the first candidate block group according to the first control operation result.

3. The method according to claim 1, characterized in that The preset test conditions include temperature test conditions and voltage test conditions, and the preset thresholds include temperature test preset thresholds and voltage test preset thresholds; The step of performing a control operation on the first candidate block group under a preset test condition to obtain a control operation result corresponding to the first candidate block group, and determining a second candidate block group having a number of error bits less than or equal to a preset threshold from the first candidate block group according to the control operation result includes: Under the temperature test condition, performing the control operation on the first candidate block group to obtain a first control operation result corresponding to the first candidate block group, and determining a target block group having a number of error bits less than or equal to a preset threshold value of the temperature test from the first candidate block group according to the first control operation result; Under the voltage test condition, performing the control operation on the target block group to obtain a second control operation result corresponding to the target block group; The second candidate block group having the number of error bits less than or equal to the voltage test preset threshold is determined from the target block group according to the second control operation result.

4. The method according to claim 3, characterized in that The step of performing the control operation on the first candidate block group under the temperature test condition to obtain a first control operation result corresponding to the first candidate block group, and determining a target block group having a number of error bits less than or equal to a preset threshold value of the temperature test from the first candidate block group according to the first control operation result includes: Under the first temperature test condition, performing the control operation on the first candidate block group to obtain a control operation result at the first temperature corresponding to the first candidate block group, and determining a first block group having a number of error bits less than or equal to a preset threshold value of the first temperature test from the first candidate block group according to the control operation result at the first temperature; Under the second temperature test condition, performing the control operation on the first block group to obtain the control operation result at the second temperature corresponding to the first block group, and determining a second block group having a number of error bits less than or equal to a preset threshold value of the second temperature test from the first block group according to the control operation result at the second temperature; Under the third temperature test condition, the control operation is performed on the second block group to obtain the control operation result at the third temperature corresponding to the second block group, and a target block group having a number of error bits less than or equal to a preset threshold value of the third temperature test is determined from the second block group according to the control operation result at the third temperature; The temperature of the first temperature test condition is lower than the temperature of the second temperature test condition, and the temperature of the first temperature test condition is higher than the temperature of the third temperature test condition.

5. The method according to any one of claims 1 to 4, characterized in that The management operation includes at least one of the following: single-side erasing, single-side read-write operation, multi-side erasing and multi-side read-write operation.

6. A solid state hard disk, characterized in that: include: A target storage unit is determined from the solid state drive according to the misalignment screening principle, wherein the target storage unit is at least two storage units located in different logical units or located on different surfaces of the same logical unit; the number of error bits of the target storage unit is less than a preset threshold, and the preset threshold is less than the error bit setting value in the original factory screening rule; Storing the data in at least two of the target storage units for double data backup; Determine the target storage unit from the solid state drive according to the dislocation screening principle, including: Determine a first candidate block group from the solid state drive that satisfies the requirement that the number of error bits is less than the error bit setting value; Performing a control operation on the first candidate block group under a preset test condition to obtain a control operation result corresponding to the first candidate block group, and determining a second candidate block group having a number of error bits less than or equal to a preset threshold from the first candidate block group according to the control operation result; Determine, from the second candidate block group, the at least two storage units located in different logical units or located on different surfaces of the same logical unit; The at least two storage units are used as the target storage units.

7. A terminal device, characterized in that: The method comprises a memory and a processor, wherein the memory stores a computer program, and the computer program executes the data storage method of a solid state drive according to any one of claims 1 to 5 when the processor is running.

8. A computer-readable storage medium, characterized in that: The computer program is stored therein, and when the computer program is run on a processor, the data storage method of the solid state hard disk described in any one of claims 1 to 5 is executed.

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