Method for monitoring oxide depression after copper grinding by special pattern defects

Abstract

The present invention discloses a method for monitoring the degree of oxide depression after copper grinding through special pattern defects, which comprises the following steps: step 1, grinding copper and oxide; step 2, thin film deposition after grinding; step 3, photolithography after thin film deposition; step 4, etching after photolithography; step 5, defect scanning after etching, so as to judge the degree of oxide depression. The present invention realizes monitoring of depression by reflecting the depression through defects in subsequent processes.

Description

Technical Field

[0001] The invention relates to the field of semiconductor technology, and in particular to a method for monitoring the degree of oxide depression after copper grinding through special pattern defects. Background Art

[0002] During the copper grinding process, the grinding rates of copper and oxide are different. Oxide grinding is faster, so there will be oxide depression after copper grinding. Severe depression will cause yield loss and affect subsequent processes. It is difficult to monitor such depression. Summary of the invention

[0003] In view of the above situation, in order to overcome the defects of the prior art, the present invention provides a method for monitoring the degree of oxide depression after copper grinding through special pattern defects.

[0004] The present invention solves the above technical problems through the following technical solutions: a method for monitoring the degree of oxide depression after copper grinding through special pattern defects, characterized in that it comprises the following steps:

[0005] Step 1, grinding copper and oxide;

[0006] Step 2, thin film deposition after grinding;

[0007] Step 3, photolithography after thin film deposition;

[0008] Step 4, etching after photolithography;

[0009] Step 5: Perform defect scanning after etching to determine the extent of oxide depression.

[0010] Preferably, the defect scanning in step five is achieved by an electron beam scanner to improve accuracy.

[0011] Preferably, if severe defects are produced after the oxide grinding in step one, subsequent thin film deposition, photolithography, and etching will be affected by the depression. Severe defects will cause thin film residues to form during the subsequent etching process, which can be discovered by defect scanning. Ultimately, the area of ​​the thin film residue can be used to determine the degree of depression of the entire oxide, thereby determining abnormal grinding conditions.

[0012] Preferably, in step 1, a plurality of marks are set on the oxide, which facilitates subsequent scanning.

[0013] Preferably, in step 1, a chemical mechanical polishing process is used to polish the copper and the oxide to improve the polishing effect.

[0014] The positive and progressive effect of the present invention is that the present invention can display the depression through defects in subsequent processes, thereby realizing the monitoring of the depression. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 The present invention is a flow chart of a method for monitoring oxide recessing after copper grinding through special pattern defects. DETAILED DESCRIPTION

[0016] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0017] like Figure 1 As shown, the method for monitoring the degree of oxide depression after copper grinding by special pattern defects of the present invention comprises the following steps:

[0018] Step 1, grinding copper and oxide;

[0019] Step 2: Thin film deposition (FILM DEP) after grinding;

[0020] Step 3, photolithography after thin film deposition;

[0021] Step 4, etching after photolithography;

[0022] Step 5: Perform defect scanning after etching to determine the extent of oxide depression.

[0023] The defect scanning in step five is achieved by an electron beam scanner to improve accuracy.

[0024] If serious defects are produced after the oxide grinding in step one, the subsequent thin film deposition, photolithography, and etching will be affected by the depression. Severe defects will cause the formation of thin film residues in the subsequent etching process, which can be discovered by defect scanning. Ultimately, the area of ​​the thin film residue can be used to determine the degree of depression of the entire oxide, thereby determining the abnormal grinding situation.

[0025] Step 1 sets multiple marks on the oxide to facilitate subsequent scanning.

[0026] Step 1: Grind copper and oxide using chemical mechanical grinding process to improve grinding effect.

[0027] In summary, the present invention realizes monitoring of the depression by making the depression appear as a defect through subsequent processes.

[0028] The above specific implementation modes are preferred embodiments of the present invention and cannot be used to limit the present invention. Any other changes or other equivalent replacement methods that do not deviate from the technical solution of the present invention are included in the protection scope of the present invention.

Claims

1. A method for monitoring the degree of oxide depression after copper grinding by special pattern defects, characterized in that: It includes the following steps: Step 1, grinding copper and oxide; Step 2, thin film deposition after grinding; Step 3, photolithography after thin film deposition; Step 4, etching after photolithography; Step 5: After etching, perform defect scanning to determine the degree of depression of the entire oxide by the area of ​​the remaining film, thereby determining the abnormal grinding situation.

2. The method for monitoring the degree of oxide depression after copper grinding by special pattern defects according to claim 1, characterized in that: The defect scanning in step five is achieved by an electron beam scanner.

3. The method for monitoring the degree of oxide depression after copper grinding by special pattern defects according to claim 1, characterized in that: The step 1 is to set a plurality of marks on the oxide.

4. The method for monitoring the degree of oxide depression after copper grinding by special pattern defects according to claim 1, characterized in that: In the step 1, the copper and the oxide are ground by a chemical mechanical grinding process.

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