Circuit device

Abstract

The present invention improves the inductance reduction effect by reducing the distortion of the inductance loop generated when the switching element is turned on and off. The upper arm circuit section (201U) and the lower arm circuit section (201L) are arranged offset in a second direction orthogonal to the first direction in which the upper arm circuit section (201U) and the lower arm circuit section (201L) are separated, and at least a part of the buffer circuit connection section area (202) composed of the positive terminal section (181), the negative terminal section (155), and the buffer element (30) is arranged in the first area generated by the offset of the upper arm circuit section (201U) and the lower arm circuit section (201L) in the second direction.

Description

Technical Field

[0001] The present invention relates to a circuit device. Background Art

[0002] Circuit devices such as power semiconductor modules having switching elements for power and performing power conversion are widely used in consumer, automotive, railway, power conversion equipment, etc. due to their high conversion efficiency. In such a circuit device having a switching element, when the switching element is turned on and off, the voltage rises due to self-inductance, and thus a surge-like high voltage may be generated.

[0003] As a structure for suppressing the voltage rise caused by inductance, there is known the following power semiconductor module, in which a buffer element including a buffer capacitor is disposed between a power switching element and a smoothing capacitor, thereby reducing the wiring inductance. As an example of such a power semiconductor module, there is a structure in which an upper arm circuit portion and a lower arm circuit portion are juxtaposed, a positive electrode side lead connected to the upper arm circuit portion and a negative electrode side lead connected to the lower arm circuit portion extend above the upper arm circuit portion and the lower arm circuit portion, respectively, and the buffer element is disposed between the positive electrode side lead and the negative electrode side lead (for example, refer to Patent Document 1).

[0004] Prior Art Documents

[0005] Patent Documents

[0006] Patent Document 1: Japanese Patent Application Laid-Open No. 2014-53516 Summary of the Invention

[0007] Technical Problem to be Solved by the Invention

[0008] In the power semiconductor module disclosed in Patent Document 1, the buffer element is disposed above the upper arm circuit portion and the lower arm circuit portion. The length of the circuit in the buffer element connection portion region is shorter than the length of the circuit in the arrangement direction of the upper and lower arm series circuit portions formed by juxtaposing the upper arm circuit portion and the lower arm circuit portion. Therefore, in the inductance loop generated by the on and off of the switching element, the buffer element connection portion region is formed in a convex shape having a width narrower than that of the upper and lower arm series circuit portions. That is, the inductance loop is a convex-shaped loop obtained by forming a depression between the region flowing from the upper and lower arm series circuit portions to the buffer element connection portion region and the region flowing from the buffer element connection portion region to the upper and lower arm series circuit portions. Therefore, since a distortion is formed in the inductance loop and a useless region is generated, the inductance reduction effect cannot be obtained sufficiently.

[0009] Technical Solution for Solving the Technical Problem

[0010] A circuit device according to an embodiment of the present invention includes: an upper arm circuit portion having a first switching element; a lower arm circuit portion disposed separately from the upper arm circuit portion in a first direction and having a second switching element; a positive terminal portion electrically connected to the upper arm circuit portion; a negative terminal portion disposed at a gap from the upper arm circuit portion in the first direction and electrically connected to the lower arm circuit portion; a buffer element disposed in a region of the gap including the positive terminal portion and the negative terminal portion and connecting the positive terminal portion and the negative terminal portion; and a heat dissipation member stacked on the upper arm circuit portion and the lower arm circuit portion via an insulating layer. The upper arm circuit portion and the lower arm circuit portion are offset in a second direction orthogonal to the first direction, and at least a part of a buffer circuit connection portion region formed by the positive terminal portion, the negative terminal portion, and the buffer element is disposed in the first region generated by the offset of the upper arm circuit portion and the lower arm circuit portion in the second direction.

[0011] Advantages of the Invention

[0012] According to the present invention, distortion of an inductance loop can be reduced, thereby improving the inductance reduction effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 is an external perspective view of an embodiment of the circuit device of the present invention.

[0014] Figure 2 is a perspective view of the state after removing Figure 1 the sealing resin of the illustrated circuit device.

[0015] Figure 3 is a perspective view of the state after removing Figure 2 the heat dissipation member of the intermediate body of the illustrated circuit device.

[0016] Figure 4 is a circuit diagram showing an example of the circuit of the circuit device shown in Figure 1 above.

[0017] Figure 5 shows the conductor pattern of the insulating member provided in the intermediate body of the circuit device shown in Figure 3 above, Figure 5 (A) is a perspective view of the source-side insulating member viewed from above, Figure 5 (B) is a perspective view of the drain-side insulating member viewed from above.

[0018] Figure 6 shows the mounting structure of the intermediate body of the circuit device shown in Figure 3 above, Figure 6(A) is a top view showing the mounting state on the drain-side insulating substrate as viewed from above through the source-side insulating substrate. Figure 6 (B) is a top view showing the mounting state on the source-side insulating substrate as viewed from above.

[0019] Figure 7 is Figure 1 a cross-sectional view taken along line VII-VII of the illustrated circuit device. Figure 1 The line VII-VII of the illustrated circuit device passes through Figure 6 the line VII-VII in the mounting state on the drain-side insulating substrate side of (B).

[0020] Figure 8 is Figure 1 a cross-sectional view taken along line VIII-VIII of the illustrated circuit device. Figure 1 The line VIII-VIII of the illustrated circuit device passes through Figure 6 the line VIII-VIII in the mounting state on the drain-side insulating substrate side of (B).

[0021] Figure 9 is Figure 6 a layout view of the mounting state on the drain-side insulating substrate side shown in (A).

[0022] Figure 10 (A) shows Figure 6 a top view of the eddy current loop generated on the plane in the mounting state on the drain-side insulating substrate side shown in (A), Figure 10 (B) is a perspective view showing the eddy current loop generated by the heat dissipation member of the circuit device.

[0023] Figure 11 Shows a modified example of the circuit device of the present invention, Figure 11 (A) is a layout view of the mounting state on the drain-side insulating substrate side corresponding to Figure 9 and Figure 11 (B) is a top view showing the conductor pattern of the source-side insulating member. Detailed Embodiments

[0024] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The following description and drawings are examples for explaining the present invention, and for clarity of explanation, appropriate omissions and simplifications are made. The present invention can also be implemented in various other forms. Unless otherwise specifically limited, each component can be either singular or plural.

[0025] For ease of understanding of the present invention, the positions, dimensions, shapes, ranges, etc. of the respective constituent elements shown in the drawings sometimes do not represent the actual positions, dimensions, shapes, ranges, etc. Therefore, the present invention is not necessarily limited to the positions, dimensions, shapes, ranges, etc. disclosed in the drawings.

[0026] Figure 1 is a perspective external view of an embodiment of the circuit device of the present invention, Figure 2 is removing Figure 1 a perspective view of the state after removing the sealing resin of the illustrated circuit device, Figure 3 is removing Figure 2 a perspective view of the state after removing the heat dissipation member of the intermediate body of the illustrated circuit device.

[0027] In addition, in the following description, the x-direction, y-direction, and z-direction are as shown in the figure.

[0028] As Figure 1 shown, the circuit device 100 has a substantially flat cuboid shape.

[0029] The circuit device 100 includes a pair of upper and lower heat dissipation members 140 (refer to Figure 2 ) and a sealing resin 70 that seals the peripheral area between the pair of heat dissipation members 140. As will be described later, a plurality of semiconductor elements 21U, 21L (refer to Figure 6 etc.) are sealed inside the pair of heat dissipation members 140 and the sealing resin 70. The semiconductor elements 21U and 21L are power semiconductor elements, and hereinafter, the circuit device 100 is exemplified as a power semiconductor module.

[0030] As Figure 1 , Figure 2 shown, the positive lead terminal 111 and the negative lead terminal 112 of the high-voltage circuit system protrude from one side edge in the -y direction of the circuit device 100. In addition, the drain lead terminal 121U, the source lead terminal 122U, and the gate lead terminal 123U of the control circuit system protrude from one side edge in the -y direction of the circuit device 100.

[0031] The AC lead terminal 113 of the high-voltage circuit system protrudes from one side edge in the +y direction of the circuit device 100. In addition, the drain lead terminal 121L, the source lead terminal 122L, and the gate lead terminal 123L of the control circuit system protrude from one side edge in the +y direction of the circuit device 100. Sensing lead terminals (not numbered), etc. also protrude from one side edge in the +y direction of the circuit device 100.

[0032] The heat dissipation member 140 has a plurality of heat dissipation pins 141 protruding outward. In the heat dissipation member 140, for example, the heat dissipation pins 141 are integrally formed by die casting of aluminum or the like. The heat dissipation pins 141 can be separately formed and fixed to the base member. The heat dissipation member 140 can be formed of other metal materials with good heat dissipation properties other than aluminum.

[0033] As Figure 3 shown, the circuit device 100 has a pair of upper and lower insulating members 151, 153 that are thermally coupled to the heat dissipation member 140 respectively. Between the pair of upper and lower insulating members 151, 153, a plurality of semiconductor elements 21U, 21L (refer to Figure 6 etc.) and members for mounting the respective semiconductor elements 21U, 21L to be described below are provided.

[0034] Figure 4 is a circuit diagram showing an example of the circuit of the circuit device shown in Figure 1 above.

[0035] The circuit device 100 has an upper and lower arm series circuit formed by serially connecting a semiconductor element 21U that operates as an upper arm circuit portion and a semiconductor element 21L that operates as a lower arm circuit portion.

[0036] In addition, the semiconductor elements 21U, 21L of the upper and lower arm circuit portions are usually each composed of a plurality of semiconductor elements.

[0037] In the present embodiment, the circuit device 100 exemplifies a two - in - one package in which the upper arm circuit portion and the lower arm circuit portion are integrated. The semiconductor elements 21U and 21L are formed of, for example, MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). In the circuit device 100 of the present embodiment, particularly, high - speed operating SiC (Silicon Carbide) - MOSFETs or the like can be used. Hereinafter, the semiconductor elements 21U and 21L will be described as MOSFETs.

[0038] Also referring to Figure 1 and Figure 2 for description. The drain lead terminal 121U is connected to the drain terminal 21UD of the semiconductor element 21U, the source lead terminal 122U is connected to the source terminal 21US, and the gate lead terminal 123U is connected to the gate terminal 21UG.

[0039] The positive electrode lead terminal 111 is connected to the positive terminal portion 21UP of the semiconductor element 21U.

[0040] The drain lead terminal 121L is connected to the drain terminal 21LD of the semiconductor element 21L, the source lead terminal 122L is connected to the source terminal 21LS, and the gate lead terminal 123L is connected to the gate terminal 21LG. The negative lead terminal 112 is connected to the negative terminal portion 21LN of the semiconductor element 21L.

[0041] The source terminal 21US of the semiconductor element 21U and the drain terminal 21LD of the semiconductor element 21L are connected by a conductor 22. The gate terminal 21UG of the semiconductor element 21U and the gate terminal 21LG of the semiconductor element 21L are connected to a drive circuit (not shown). The upper and lower arm series circuit outputs AC power of any one of the three phases of U phase, V phase, and W phase corresponding to each phase winding of the armature winding of an electric generator (not shown) etc. from the AC terminal portion 22a of the conductor 22. The AC lead terminal 123 is connected to the AC terminal portion 22a.

[0042] Figure 5 The conductor pattern of the insulating member provided in the intermediate body of the Figure 3 illustrated circuit device is shown. Figure 5 (A) is a perspective view of the source side insulating member viewed from above. Figure 5 (B) is a perspective view of the drain side insulating member viewed from above.

[0043] As Figure 5 shown in (A), in the source side insulating member 153, the source side conductor patterns 154U, 154L are integrally formed on one surface on the semiconductor element 21U, 21L side (-z direction side). As Figure 5 shown in (B), in the drain side insulating member 151, the drain side conductor patterns 152U, 152L and the negative electrode connection pattern 155 are integrally formed on one surface on the semiconductor element 21U, 21L side (+z direction side).

[0044] The source side conductor patterns 154U, 154L, the drain side conductor patterns 152U, 152L, and the negative electrode connection pattern 155 are formed of, for example, a copper-based metal. A metal material having good electrical conductivity and thermal conductivity other than the copper-based metal may also be used.

[0045] Explaining in more detail Figure 3 The bonding structure between the positive lead terminal 111, the negative lead terminal 112, and the AC lead terminal 113, which are also shown, and Figure 5 the drain side conductor patterns 152U, 152L and the source side conductor patterns 154U, 154L shown in (A) and (B).

[0046] The positive lead terminal 111 is bonded to a partial region pattern 152UP of the conductor pattern 152U provided on the drain side insulating member 151 (equivalent toFigure 4 the positive terminal portion 21UP of Figure 9 and the positive electrode connection terminal 181). Further, the drain-side conductor pattern 152U is electrically connected to the drain terminal 21UD of the semiconductor element 21U that constitutes the Figure 4 upper arm circuit in

[0047] The AC lead terminal 113 is joined to a partial region pattern 152LA of the conductor pattern 152L provided on the drain-side insulating member 151 (corresponding to Figure 4 the AC terminal portion 22a of Figure 9 and the conductor pattern of the AC terminal connection portion 203). Further, the drain-side conductor pattern 152L is electrically connected to the source terminal 21US of the semiconductor element 21U that constitutes the Figure 4 upper arm circuit in

[0048] A partial region 154UA of the conductor pattern 154U provided in the source-side insulating member 153 and a partial region 152LA of the conductor pattern 152L provided in the drain-side insulating member 151 are electrically connected by the up-and-down conduction conductor 115 described below. That is, the source terminal 21US of the semiconductor element 21U of the upper arm circuit and the drain terminal 21LD of the semiconductor element 21L of the lower arm circuit are electrically connected. Figure 7 as shown in

[0049] A partial region 154LN of the conductor pattern 154L provided on the source-side insulating member 153 and the negative electrode connection pattern 155 that is an isolation pattern formed on the drain-side insulating member 151 are electrically connected by the up-and-down conduction conductor 116 shown in Figure 6 (A) below, and the negative electrode lead terminal 112 is joined to the negative electrode connection pattern 155. Accordingly, the conductor pattern 154L is electrically connected to the negative electrode lead terminal 112.

[0050] Figure 6 The buffer element 30 described later is inserted and mounted in Figure 5 (B) between the isolated source-side conductor pattern 155 and a partial region pattern 152UP of the drain-side conductor pattern 152U. That is, the buffer element 30 is provided between the partial region pattern 152UP on the drain side to which the positive electrode lead terminal 111 is connected and the isolated negative electrode connection pattern 155 to which the negative electrode lead terminal 112 is connected. In other words, it is inserted and mounted between the drain terminal 21UD of the semiconductor element 21U of the upper arm circuit and the source terminal 21LS of the semiconductor element 21L of the lower arm circuit.

[0051] Figure 6 shows Figure 3 the mounting structure of the intermediate body of the circuit device illustrated in Figure 6(A) is a top view showing the mounting state on the drain-side insulating substrate side as viewed from above through the source-side insulating substrate. Figure 6 (B) is a top view showing the mounting state on the source-side insulating substrate side as viewed from above.

[0052] Figure 7 Is Figure 1 A cross-sectional view taken along line VII-VII of the illustrated circuit device. Figure 1 The line VII-VII of the illustrated circuit device passes through Figure 6 The line VII-VII in the mounting state on the drain-side insulating substrate side of (A). Figure 8 Is Figure 1 A cross-sectional view taken along line VIII-VIII of the illustrated circuit device. Figure 1 The line VIII-VIII of the illustrated circuit device passes through Figure 6 The line VIII-VIII in the mounting state on the drain-side insulating substrate side of (A).

[0053] The heat sinks 161U and 161L are joined to the drain-side conductor patterns 152U and 152L of the drain-side insulating member 151. The drain-side conductor patterns 152U and 152L and the heat sinks 161U and 161L are joined by a conductive joining material 51 such as solder or a joining paste for forming sintered metal ( Figure 7 , Figure 8 ).

[0054] As Figure 6 shown in (A), eight semiconductor elements 21U and eight semiconductor elements 21L are respectively mounted on the drain-side conductor pattern 152U and the drain-side conductor pattern 152L. The eight semiconductor elements 21U are arranged in two columns in the x direction, with four provided in each column, and the eight semiconductor elements 21L are also arranged in two columns in the x direction, with four provided in each column (in the y direction).

[0055] Among the semiconductor elements 21U in each column, two are connected as a pair to one heat sink 161U. The heat sinks 161U are arranged in two columns separately in the x direction. The gate conductors 165 are arranged between the heat sinks 161U arranged in two columns.

[0056] Similarly, among the semiconductor elements 21L in each column, two are connected as a pair to one heat sink 161L. The heat sinks 161L are arranged in two columns separately in the x direction. The gate conductors 165 are arranged between the heat sinks 161U arranged in two columns.

[0057] Each gate conductor 165 passes through the insulating layer 171 (see Figure 6 (A), Figure 8)Fixed to the drain-side conductor patterns 152U and 152L.

[0058] Also as Figure 7 , Figure 8 shown, the drain terminals 21UD and 21LD of the semiconductor elements 21U and 21L (refer to Figure 4 ) are joined to the heat sinks 161U and 161L by the conductive bonding material 51. The gate terminals 21UG and 21LG of the semiconductor elements 21U and 21L are joined to the gate conductor 165 by the wire 172 (refer to Figure 6 (A) and Figure 8 ).

[0059] As Figure 7 shown, the positive lead terminal 111 is joined to the drain-side conductor pattern 152U by the conductive bonding material 51. Although not shown, similarly, the negative lead terminal 112 (refer to Figure 1 ) is joined to the drain-side conductor pattern 152L by the conductive bonding material 51.

[0060] Although not shown, the drain lead terminal 121U (refer to Figure 1 ) is connected to the drain-side conductor pattern 152U, and the gate lead terminal 123U (refer to Figure 1 ) is connected to the gate conductor 165. Similarly, although not shown, the drain lead terminal 121L (refer to Figure 1 ) is connected to the drain-side conductor pattern 152L, and the gate lead terminal 123L (refer to Figure 1 ) is connected to the gate conductor 165.

[0061] In addition, as Figure 7 shown, the AC lead terminal 113 is joined to the drain-side conductor pattern 152L by the conductive bonding material 51.

[0062] The up-down conduction conductor 115 is integrally formed in the AC lead terminal 113, for example, by riveting or the like. The up-down conduction conductor 115 can be joined to the AC lead terminal 113 by the conductive bonding material. As described according to Figure 7 , the up-down conduction conductor 115 corresponds to the conductor 22 in Figure 4 .

[0063] As Figure 6As shown, the drain-side conductor pattern 152U to which the positive electrode lead terminal 111 is joined and the negative electrode connection pattern 155 to which the negative electrode lead terminal 112 is joined are separated from each other between the positive electrode lead terminal 111 and the negative electrode lead terminal 112. A buffer element 30 that connects the drain-side conductor pattern 152U and the negative electrode connection pattern 155 is mounted in a region where the positive electrode lead terminal 111 and the negative electrode lead terminal 112 are separated. Although not shown, the buffer element 30 has a resistor and a capacitor connected in series therein.

[0064] As Figure 6 (B) shows, the heat sinks 162U and 162L are joined to the source-side conductor patterns 154U and 154L provided on the source-side insulating member 153 through conductive joining materials 51 (see Figure 7 and Figure 8 ).

[0065] As Figure 7 shown, the source terminals 21US and 21LS of the semiconductor elements 21U and 21L (see Figure 4 ) are joined to the heat sinks 162U and 162L through conductive joining materials 51, respectively.

[0066] As Figure 6 and 8 shown, grooves 164 extending in the Y direction are respectively formed in the central portions of the heat sinks 162U and 162L, thereby forming a structure that avoids contact with the wires 172 connecting the gate terminals 21UG and 21LG of the semiconductor elements 21U and 21L and the gate conductor 165.

[0067] The heat sinks 161U, 161L, 162U, and 162L are formed to be thicker and have a larger heat capacity than the drain-side conductor patterns 152U, 152L, the source-side conductor patterns 154U, and 154L. Therefore, even when the temperatures of the semiconductor elements 21U and 21L suddenly and rapidly rise, heat is stored, delayed, and dissipated. As a result, the change in the amount of heat dissipated from the heat sinks 161U, 161L, 162U, and 162L becomes gentle, and damage to the semiconductor elements 21U and 21L can be suppressed.

[0068] As Figure 7 shown, the upper and lower conduction conductors 115 are joined to the source-side conductor pattern 154U provided on the source-side insulating member 153 through the conductive joining material 51. The upper and lower conduction conductors 115 correspond to Figure 4 the conductor 22 in Figure 4 and electrically connect the source terminal 21US of the semiconductor element 21U constituting the upper arm circuit portion (see Figure 4 ) and the drain terminal 21LD of the semiconductor element 21L constituting the lower arm circuit portion (see

[0069] Although not shown in the sectional view, Figure 6 The upper and lower conduction conductor 116 shown in (A) also electrically connects the negative connection pattern 155 to the source-side conductor pattern 154L formed on the source-side insulating member 153 with the same structure as the upper and lower conduction conductor 115.

[0070] The surfaces on the opposite sides of the semiconductor element 21U and 21L sides of the drain-side insulating member 151 and the source-side insulating member 153 are joined to the heat dissipation member 140 through a conductive bonding material 51. The semiconductor elements 21U, 21L, heat sinks 161U, 161L, 162U, 162L, and the drain-side insulating member 151 and the source-side insulating member 153 are sandwiched and mounted between a pair of upper and lower heat dissipation members 140, and in this state, they are sealed with a sealing resin 70 filled between the pair of upper and lower heat dissipation members 140. The sealing resin 70 is provided to cover the outer peripheral edges of the pair of upper and lower heat dissipation members 140.

[0071] Figure 9 is Figure 6 The layout diagram of the mounting state on the drain-side insulating substrate side shown in (A).

[0072] The circuit device 100 has four regions, namely the upper arm circuit portion 201U, the lower arm circuit portion 201L, the buffer circuit connection portion region 202, and the AC terminal connection portion 203.

[0073] The four regions form a rectangular planar region. Hereinafter, this will be described.

[0074] The upper arm circuit portion 201U is a region disposed between the drain-side conductor pattern 152U and the source-side conductor pattern 154U and on which eight semiconductor elements 21U are mounted.

[0075] The lower arm circuit portion 201L is a region disposed between the drain-side conductor pattern 152L and the source-side conductor pattern 154L and on which eight semiconductor elements 21L are mounted.

[0076] The buffer circuit connection portion region 202 is a region on which the positive terminal portion 181 (equivalent to the positive terminal portion 21UP in Figure 6 (A)) that extends along the lower arm circuit portion side (+x direction) of the drain-side conductor pattern 152U and is joined to the positive lead terminal 111 (refer to Figure 4 ), the negative connection pattern 155, and the buffer element 30 that connects the drain-side conductor pattern 152U and the negative connection pattern 155 are mounted.

[0077] The AC terminal connection portion 203 is a region where the drain-side conductor pattern 152L extends along the lower arm circuit portion side (-x direction) and is connected to the AC terminal portion 22a (refer to Figure 4 ).

[0078] The upper arm circuit section 201U and the lower arm circuit section 201L are arranged separately in the x direction. The upper arm circuit section 201U and the lower arm circuit section 201L have substantially the same length in the separating direction (x direction) and in the direction (y direction) orthogonal to the separating direction, and have a rectangular shape.

[0079] The upper arm circuit section 201U and the lower arm circuit section 201L are offset in the direction (y direction) orthogonal to the separating direction. Figure 9 Among them, the upper arm circuit section 201U is offset to a position protruding in the -y direction with respect to the lower arm circuit section 201L. In other words, one side extending in the x direction on the -y direction end side of the lower arm circuit section 201L is offset by a predetermined length in the +y direction from one side extending in the x direction on the -y direction end side of the upper arm circuit section 201U.

[0080] The buffer circuit connection part area 202 is provided in a rectangular area formed by offsetting the lower arm circuit section 201L in the +y direction with respect to the upper arm circuit section 201U.

[0081] One side extending in the x direction on the +y direction end side of the upper arm circuit section 201U is offset by a predetermined length in the -y direction from one side extending in the x direction on the +y direction end side of the lower arm circuit section 201L. The AC terminal connection part 203 is provided in a rectangular area formed by offsetting the upper arm circuit section 201U in the -y direction with respect to the lower arm circuit section 201L.

[0082] As described above, the upper arm circuit section 201U and the lower arm circuit section 201L are formed into a rectangular shape having substantially the same length in the x direction and the y direction. Therefore, the buffer circuit connection part area 202 and the AC terminal connection part 203 are formed into a rectangular shape having substantially the same length in the x direction and the y direction.

[0083] That is, the four areas of the upper arm circuit section 201U, the lower arm circuit section 201L, the buffer circuit connection part area 202, and the AC terminal connection part 203 respectively form planar areas having a rectangular shape.

[0084] Figure 10 (A) is a top view showing an eddy current loop generated on a plane in a mounting state on the drain side insulating substrate side as shown in Figure 6 (A).

[0085] When the semiconductor elements 21U and 21L are turned on or off, self-inductance is generated, and thus an eddy current loop is generated in a direction that obstructs the steady-state current. In the present embodiment, as described above, the four areas of the upper arm circuit section 201U, the lower arm circuit section 201L, the buffer circuit connection part area 202, and the AC terminal connection part 203 form planar areas having a rectangular shape.

[0086] Therefore, as Figure 10 (A) shows, the eddy current generated in the circuit of this embodiment forms a loop with a substantially rectangular shape without distortion. Thus, the distortion of the inductance loop can be reduced, thereby achieving an improvement in the inductance reduction effect.

[0087] Figure 10 (B) is a perspective view showing the eddy current loop generated in the heat dissipation member of the circuit device.

[0088] As Figure 10 (B) shows, in the heat dissipation member 140 provided in the circuit where eddy current is generated via an insulating layer, an eddy current loop in the direction opposite to the circuit is generated.

[0089] -Variant example-

[0090] Figure 11 A variant example of the circuit device of the present invention is shown. Figure 11 (A) is a layout diagram of the mounting state on the drain-side insulating substrate corresponding to Figure 9 and (B) is a top view showing the conductor pattern of the source-side insulating member. Figure 11 (B) is a top view showing the conductor pattern of the source-side insulating member.

[0091] Figure 9 In the layout on the drain-side insulating substrate side shown, the upper arm circuit portion 201U is configured to protrude in the -y direction with respect to the lower arm circuit portion 201L. In contrast, in Figure 11 the variant example shown, the lower arm circuit portion 201L has a structure that protrudes in the -y direction with respect to the upper arm circuit portion 201U.

[0092] As Figure 11 (A) shows, the heat sinks 161U and 161L are joined to the drain-side conductor patterns 152U and 152L of the drain-side insulating member 151. Three semiconductor elements 21U are provided on the heat sink 161U, and three semiconductor elements 21L are provided on the heat sink 161L. The drain terminals 21UD and 21LD of the semiconductor elements 21U and 21L are electrically connected to the heat sinks 161U and 161L respectively.

[0093] In addition, the gate conductor 165 is provided on the drain-side conductor patterns 152U and 152L via an insulating layer (not shown). The gate terminals 21UG and 21LG of the semiconductor elements 21U and 21L are electrically connected to the gate conductor 165 through wires 172 respectively.

[0094] The positive terminal portion 181 is provided on the -y direction end side of the drain side conductor pattern 152u. The negative connection pattern 155 is provided on the -y direction end side of the drain side insulating member 151. The negative connection pattern 155 is provided separately from the drain side conductor pattern 152L and the positive terminal portion 181. The buffer element 30 is mounted on the separated portion between the negative connection pattern 155 and the positive terminal portion 181. The buffer element 30 is electrically connected to the negative connection pattern 155 and the positive terminal portion 181. The positive lead terminal 111 is connected to the positive terminal portion 181. The negative lead terminal 112 is connected to the negative connection pattern 155.

[0095] having Figure 11 (B) The source side conductor patterns 154U and 154L having the shown shape are formed on the source side insulating member 153. The heat sinks 162U and 162L are respectively joined to the source side conductor patterns 154U and 154L. The heat sinks 162U and 162L are respectively joined to the drain terminals 21UD and 21LD of the semiconductor elements 21U and 21L.

[0096] The source side conductor pattern 154U has an extension portion 182 extending along the drain side conductor pattern 152L side (-x direction) on the +y direction end side. The extension portion 182 of the source side conductor pattern 154U is electrically connected to the drain side conductor pattern 152L through the vertical conduction conductor 115. The AC lead terminal 113 is connected to the vicinity of the connection portion of the drain side conductor pattern 152L and the vertical conduction conductor 115.

[0097] The source side conductor pattern 154L has an extension portion 183 extending along the negative connection pattern 155 side (+x direction) on the -y direction end side. The extension portion 183 of the source side conductor pattern 154L is electrically connected to the negative connection pattern 155 through the vertical conduction conductor 116.

[0098] The upper arm circuit portion 201U is a rectangular region having the drain side conductor pattern 152U, the source side conductor pattern 154U, and three semiconductor elements 21U.

[0099] The lower arm circuit portion 201L is a rectangular region having the drain side conductor pattern 152L, the source side conductor pattern 154L, and three semiconductor elements 21L.

[0100] The buffer circuit connection portion region 202 is a region where the negative connection pattern (equivalent to Figure 4 the negative terminal portion 21LN in Figure 4 ) 155, the positive terminal portion 181 (equivalent to

[0101] The AC terminal connection portion 203 is a region where the drain-side conductor patterns 154U and 154L extend along the lower arm circuit portion side (-x direction) and are connected to the AC terminal portion 22a (see Figure 4 ).

[0102] The upper arm circuit portion 201U and the lower arm circuit portion 201L are formed in a rectangular shape having substantially the same length in the x direction and the y direction.

[0103] The upper arm circuit portion 201U has a structure that protrudes in the +y direction with respect to the lower arm circuit portion 201L. Therefore, one side extending in the x direction on the -y direction end side of the upper arm circuit portion 201U is offset by a predetermined length in the +y direction with respect to one side extending in the x direction on the -y direction end side of the lower arm circuit portion 201L. The buffer circuit connection portion region 202 is provided in a rectangular region formed by offsetting the upper arm circuit portion 201U in the +y direction with respect to the lower arm circuit portion 202L.

[0104] One side extending in the x direction on the +y direction end side of the lower arm circuit portion 201L is offset by a predetermined length in the +y direction with respect to one side extending in the x direction on the +y direction end side of the upper arm circuit portion 201U (however, the drain-side conductor pattern 152L constituting the semiconductor element 21L of the lower arm circuit portion 201L extends to the position of one side extending in the x direction on the +y direction end side of the upper arm circuit portion 201U). The AC terminal connection portion 203 is provided in a rectangular region formed by offsetting the lower arm circuit portion 201L in the -y direction with respect to the upper arm circuit portion 201U.

[0105] As described above, the upper arm circuit portion 201U and the lower arm circuit portion 201L are formed in a rectangular shape having substantially the same length in the x direction and the y direction. Therefore, the buffer circuit connection portion region 202 and the AC terminal connection portion 203 are formed in a rectangular shape having substantially the same length in the x direction and the y direction.

[0106] That is, the four regions of the upper arm circuit portion 201U, the lower arm circuit portion 201L, the buffer circuit connection portion region 202, and the AC terminal connection portion 203 form a planar region having a rectangular shape.

[0107] Therefore, even in the modified example, the eddy current generated in the circuit forms a substantially rectangular distortion-free loop. As a result, the distortion of the inductance loop can be reduced, thereby improving the inductance reduction effect.

[0108] In addition, it is not necessary to dispose the entire buffer circuit connection portion region 202 within a rectangular region obtained by offsetting one of the upper arm circuit portion 201U or the lower arm circuit portion 201L from the other in the x direction or the y direction. It is sufficient that at least a part of the buffer circuit connection portion region 202 is disposed within the rectangular region after the offset of the arm circuit portion, and the other part may be disposed outside the rectangular region after the offset of the arm circuit portion.

[0109] Similarly, it is not necessary to dispose the entire AC terminal connection portion 203 within a rectangular region obtained by offsetting one of the upper arm circuit portion 201U or the lower arm circuit portion 201L from the other in the x direction or the y direction. It is sufficient that at least a part of the AC terminal connection portion 203 is disposed within the rectangular region after the offset of the arm circuit portion, and the other part may be disposed outside the rectangular region after the offset of the arm circuit portion. In short, within the region after the offset of the arm circuit portion, it is sufficient that one side of the AC terminal connection portion 203 faces the upper arm circuit portion 201U and the other side of the AC terminal connection portion 203 faces the lower arm circuit portion 201L.

[0110] According to the above-described embodiment, the following effects are achieved.

[0111] (1) The circuit device 100 includes: an upper arm circuit portion 201U having a semiconductor element 21U (first switching element); a lower arm circuit portion 201L having a semiconductor element 21L (second switching element) and separated from the upper arm circuit portion in a first direction; a positive terminal portion 181 electrically connected to the upper arm circuit portion 201U; a negative connection pattern (negative terminal portion) 155 disposed at a gap from the upper arm circuit portion 201U in the first direction and electrically connected to the lower arm circuit portion 201L; a buffer element 30 disposed in a region including the gap between the positive terminal portion 181 and the negative terminal portion 155 and connecting the positive terminal portion 181 and the negative terminal portion 155; and a heat dissipation member 140 laminated on the upper arm circuit portion 201U and the lower arm circuit portion 201L via a drain-side insulating member 151 and a source-side insulating member 153. The upper arm circuit portion 201U and the lower arm circuit portion 201L are offset in a second direction orthogonal to the direction in which the upper arm circuit portion 201U and the lower arm circuit portion 201L are separated, and at least a part of the buffer circuit connection portion region 202 formed by the positive terminal portion, the negative terminal portion, and the buffer element 30 is disposed within a first region generated by the offset of the upper arm circuit portion 201U and the lower arm circuit portion 201L in the second direction. Therefore, eddy currents generated due to inductance generated when the switching element is turned on or off form a substantially rectangular and distortion-free loop. Thereby, the distortion of the inductance loop can be reduced, and thus the improvement of the inductance reduction effect can be achieved.

[0112] (2) For the upper arm circuit section 201U and the lower arm circuit section 201L, by shifting in the positive direction of the second direction, a first region is generated on the end side in the positive direction of the lower arm circuit section 201L, a second region is generated on the end side in the negative direction of the upper arm circuit section 201U, and at least a part of the AC terminal connection section 203 is provided in the second region. Therefore, a closed loop formed by the upper arm circuit section 201U, the lower arm circuit section 201L, the buffer circuit connection section region 202, and the AC terminal connection section 203 forms a substantially rectangular loop with small distortion, thereby further improving the inductance reduction effect.

[0113] (3) A pair of heat dissipation members 140 are provided vertically so as to sandwich the upper arm circuit section 201U and the lower arm circuit section 201L. Therefore, since the heat dissipation members 140 are provided above and below the upper arm circuit section 201U and the lower arm circuit section 201L, the heat dissipation effect can be improved as compared with a structure in which the heat dissipation members 140 are provided on one of the upper and lower sides of the upper arm circuit section 201U and the lower arm circuit section 201L.

[0114] (4) The heat dissipation member 140 extends from the upper arm circuit section 201U and the lower arm circuit section 201L to the buffer circuit connection section region 202. Therefore, the heat generated from the buffer element 30 can be dissipated through the heat dissipation member 140.

[0115] In addition, in the above embodiment, the switching element is exemplified as a MOSFET. However, for example, switching elements other than MOSFETs such as IGBTs (Insulated Gate Bipolar Transistors) can also be used. In addition, when an IGBT is used as the switching element, a diode needs to be arranged between the emitter and the collector.

[0116] In the above embodiment, the circuit device 100 is exemplified as a two-in-one module. However, the present invention can be applied to an n (n≥2)-in-one module.

[0117] In the above embodiments, the upper arm circuit section 201U and the lower arm circuit section 201L are exemplified as having substantially the same length in the x direction and the y direction. However, the upper arm circuit section 201U and the lower arm circuit section 201L can have different lengths in the x direction or the y direction.

[0118] In the above, various modification examples have been described, but the present invention is not limited to these. Various embodiments and modification examples described above can be combined or appropriately changed, and other modes considered within the technical idea of the present invention are also included in the scope of the present invention.

[0119] Reference numeral description

[0120] 21L Semiconductor Element (Second Switching Element)

[0121] 21U Semiconductor Element (First Switching Element)

[0122] 21LD Drain Terminal (First Terminal)

[0123] 21LN Negative Terminal Portion

[0124] 21UD Drain Terminal (First Terminal)

[0125] 21UP Positive Terminal Portion

[0126] 21LS Source Terminal (Second Terminal)

[0127] 21US Source Terminal (Second Terminal)

[0128] 30 Buffer Element

[0129] 100 Circuit Device

[0130] 115, 116 Upper and Lower Conductive Conductors

[0131] 140 Heat Dissipation Component

[0132] 151 Drain-Side Insulating Component (Insulating Layer)

[0133] 152L Drain-Side Conductor Pattern (Second Conductor Pattern)

[0134] 152U Drain-Side Conductor Pattern (First Conductor Pattern)

[0135] 153 Source-Side Insulating Component (Insulating Layer)

[0136] 154L Source-Side Conductor Pattern (Fourth Conductor Pattern)

[0137] 154U Source-Side Conductor Pattern (Third Conductor Pattern)

[0138] 155 Negative Connection Pattern (Negative Terminal Portion)

[0139] 161L Radiator (Second Radiator)

[0140] 161U Radiator (First Radiator)

[0141] 162L Radiator (Fourth Radiator)

[0142] 162U Radiator (Third Radiator)

[0143] 181 Positive Terminal Portion

[0144] 201L Lower Arm Circuit Portion

[0145] 201U Upper arm circuit section

[0146] 202 Buffer circuit connection section area

[0147] 203 AC terminal connection section.

Claims

1. A circuit device, characterized in that, Comprising: An upper arm circuit portion having a first switching element; A lower arm circuit portion disposed separately from the upper arm circuit portion in a first direction and having a second switching element; A positive terminal portion electrically connected to the upper arm circuit portion; A negative terminal portion disposed at a gap from the upper arm circuit portion in the first direction and electrically connected to the lower arm circuit portion; A buffer element disposed in a region of the gap including the positive terminal portion and the negative terminal portion and connecting the positive terminal portion and the negative terminal portion; And A heat dissipation member laminated on the upper arm circuit portion and the lower arm circuit portion via an insulating layer, The upper arm circuit portion and the lower arm circuit portion are offset in a second direction orthogonal to the first direction, A buffer circuit connection portion region formed by the positive terminal portion, the negative terminal portion, and the buffer element is disposed in a first region generated by the offset of the upper arm circuit portion and the lower arm circuit portion in the second direction, The upper arm circuit portion is offset in the positive direction of the second direction with respect to the lower arm circuit portion, thereby generating the first region on the end side in the positive direction of the lower arm circuit portion and generating a second region on the end side in the negative direction of the upper arm circuit portion, and an AC terminal connection portion is disposed in the second region, The upper arm circuit portion and the lower arm circuit portion are formed in a rectangular shape having the same length in the first direction and the second direction, The buffer circuit connection portion region and the AC terminal connection portion are formed in a rectangular shape having the same length in the first direction and the second direction.

2. The circuit device according to claim 1, wherein A pair of the heat dissipation members are provided above and below in a manner sandwiching the upper arm circuit portion and the lower arm circuit portion.

3. The circuit device according to claim 1, wherein The heat dissipation member extends from above the upper arm circuit portion and above the lower arm circuit portion to above the buffer circuit connection portion region.

4. The circuit device according to any one of claims 1 to 3, wherein Further comprising: A first heat sink joined to a first terminal of the first switching element; A first conductor pattern joined to the first heat sink; A second heat sink joined to a second terminal of the first switching element; A second conductor pattern joined to the second heat sink; A third heat sink joined to a first terminal of the second switching element; A third conductor pattern joined to the third heat sink; A fourth heat sink joined to a second terminal of the second switching element; A fourth conductor pattern joined to the fourth heat sink; and An upper and lower conduction conductor connecting the second conductor pattern and the third conductor pattern.

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