Deposition apparatus

Abstract

Embodiments provide a deposition apparatus including a mask frame, an opening sheet, a deposition mask, and an electrostatic chuck. In the mask frame, a first opening part is defined. The opening sheet is disposed on the mask frame. In the opening sheet, a second opening part is defined which overlaps the first opening part. The deposition mask is disposed on the opening sheet. In the deposition mask, a plurality of third opening parts are defined which overlap the second opening part. The electrostatic chuck is disposed on the deposition mask and a substrate is disposed thereon. The substrate is disposed on a surface of the electrostatic chuck, and AC power is applied to the deposition mask.

Description

[0001] This patent application claims priority to Korean Patent Application No. 10-2020-0117119, filed on September 11, 2020, the entire contents of which are incorporated herein by reference. Technical Field

[0002] This disclosure relates to a deposition apparatus and a method for placing a mask for the deposition apparatus. Background Technology

[0003] Organic light-emitting diode (OLED) displays typically possess excellent brightness and viewing angle characteristics, and are attracting attention as the next generation of flat panel displays. OLED displays do not require a separate light source, as is the case with liquid crystal displays. Because OLED displays do not require a separate light source, they can be manufactured in a lightweight and thin form. Furthermore, OLED displays offer characteristics such as low power consumption, high brightness, and fast response times.

[0004] OLED display devices include multiple light-emitting elements, each comprising an anode, an emissive layer, and a cathode. Holes and electrons are injected from the anode and cathode into the emissive layer, respectively, to form excitons. When the excitons transition to the ground state, the light-emitting element emits light. During the fabrication of the light-emitting element, a mask is placed on a substrate, and an organic material for forming the emissive layer through openings in the mask is disposed on the substrate. Summary of the Invention

[0005] This disclosure provides a deposition apparatus capable of easily placing a deposition mask on a substrate, and a method for placing the mask in the deposition apparatus.

[0006] Embodiments of the inventive concept provide a deposition apparatus including a mask frame, an aperture plate, a deposition mask, and an electrostatic chuck. A first opening is defined in the mask frame. The aperture plate is disposed on the mask frame. A second opening, overlapping the first opening, is defined in the aperture plate. The deposition mask is disposed on the aperture plate. A plurality of third openings, overlapping the second opening, are defined in the deposition mask. An electrostatic chuck is disposed on the deposition mask, and a substrate is disposed thereon. The substrate is disposed on the surface of the electrostatic chuck, and AC power is applied to the deposition mask.

[0007] In an embodiment of the inventive concept, a deposition apparatus includes a mask frame, an aperture plate, a deposition mask, and an electrostatic chuck. A first opening is defined in the mask frame. The aperture plate is disposed on the mask frame. A second opening, overlapping the first opening, is defined in the aperture plate. The deposition mask is disposed on the aperture plate. A plurality of third openings, overlapping the second opening, are defined in the deposition mask. The electrostatic chuck is disposed on the deposition mask and a substrate is disposed thereon. The substrate is disposed on the surface of the electrostatic chuck. The deposition mask includes a polymer mask and a conductive layer disposed on the surface of the polymer mask. The substrate and the conductive layer are charged with different polarities.

[0008] In an embodiment of the inventive concept, a mask placement method for a deposition apparatus includes providing an opening patch on a mask frame, the mask frame defining a first opening, and the opening patch defining a second opening overlapping the first opening. A deposition mask is disposed on the opening patch, the deposition mask defining a plurality of third openings overlapping the second opening. An electrostatic chuck is disposed on the deposition mask. An electrostatic force is generated in the electrostatic chuck to place a substrate on the surface of the electrostatic chuck. The substrate is grounded, and AC power is applied to the deposition mask to position the deposition mask close to the substrate. Attached Figure Description

[0009] The accompanying drawings are included to provide a further understanding of the inventive concept and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the inventive concept and, together with the description, serve to explain the principles of the inventive concept.

[0010] Figure 1 This is a perspective view of a deposition apparatus according to an embodiment of the inventive concept.

[0011] Figure 2 Is it as in Figure 1 The plan view of the mask frame, opening plate, and deposition mask as seen from above.

[0012] Figure 3 This shows the connection of the opening plate to... Figure 1 A diagram illustrating the mask frame method shown.

[0013] Figure 4A and Figure 4B This is used to illustrate connecting the deposition mask to... Figure 1 A diagram showing the method of opening the plate.

[0014] Figure 5 It shows along Figure 1 The diagram shows the base support portion for the movement of the first guide groove, the second guide groove, and the third guide groove.

[0015] Figure 6 It is along Figure 1 The cross-sectional view shown is taken by line I-I'.

[0016] Figure 7 It shows that the base and Figure 6 The view shown depicts the contact state of the lower surface of the electrostatic chuck.

[0017] Figure 8 It is shown that Figure 7 The diagram shows the state in which the substrate moves downwards and is set on the deposition mask.

[0018] Figure 9 It shows that it is positioned close to the base. Figure 8 The diagram shows the state of the deposition mask.

[0019] Figure 10 It is used to explain when Figure 9 The image shows a view of the deposition process performed when the deposition mask is placed on the substrate.

[0020] Figure 11 It is through the use of Figure 1 The diagram shows a plan view of a display panel manufactured by the deposition equipment shown.

[0021] Figure 12 It is shown through examples Figure 11 The image shows a cross-section of one pixel.

[0022] Figure 13A It is used for explanation Figure 10 A diagram of the deposition process shown.

[0023] Figure 13B This is a diagram used to illustrate a deposition process performed in a state where the deposition mask is not placed on the substrate.

[0024] Figure 14 , Figure 15 and Figure 16 This is a view showing a deposition apparatus according to an embodiment of the inventive concept. Detailed Implementation

[0025] In this specification, when a component such as an element, region, layer, part, etc., is referred to as being "on" another component, "connected to" or "integrated into" another component, it means that it may be placed directly on / directly connected to / directly integrated into the other component, or a third component may be arranged between them.

[0026] The same reference numerals denote the same elements. Additionally, the thickness, proportions, and dimensions of the components are exaggerated in the accompanying drawings for the purpose of effective description.

[0027] "And / or" includes all of one or more combinations defined by the relevant components.

[0028] It should be understood that the terms "first" and "second" are used herein to describe various components, but these components should not be limited by these terms. The terms are used only to distinguish one component from another. For example, without departing from the scope of the inventive concept, a first component may be referred to as a second component, and vice versa. Unless otherwise stated, singular terms may include plural forms.

[0029] Additionally, terms such as “below,” “lower,” “above,” and “upper” are used to describe the relationships of the structures shown in the accompanying drawings. These terms are described as relative concepts based on the directions shown in the drawings and not necessarily on a gravitational reference.

[0030] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which the inventive concept pertains. Furthermore, terms defined in common dictionaries shall be interpreted as having a meaning consistent with their meaning in the context of the relevant art, and shall not be interpreted in an idealized or overly formal sense unless explicitly defined herein.

[0031] In various embodiments of the inventive concept, the terms "comprising," "including," or variations thereof describe properties, areas, fixed quantities, steps, processes, elements, and / or components, but do not exclude other properties, areas, fixed quantities, steps, processes, elements, and / or components.

[0032] In the following, embodiments of the inventive concept will be described in detail with reference to the accompanying drawings.

[0033] Figure 1 This is a perspective view of the deposition apparatus DEA according to an embodiment of the inventive concept.

[0034] Reference Figure 1 The deposition apparatus DEA according to embodiments of the inventive concept may include a mask frame MF, an opening plate OPS, a deposition mask DMK, an electrostatic chuck ESC, and a transfer unit MOV.

[0035] The mask frame MF can have a quadrilateral shape, having side surfaces extending in a first direction DR1 and side surfaces extending in a second direction DR2 intersecting the first direction DR1. The mask frame MF can also have a rectangular frame shape, but the shape of the mask frame MF can be any shape other than a rectangular shape.

[0036] The first opening OP1 can be defined within the mask frame MF. The first opening OP1 can have a rectangular shape, but the shape of the first opening OP1 can be any shape other than a rectangular shape.

[0037] The mask frame MF can be made of metallic material. For example, the mask frame MF can be made of Invar alloy or stainless steel.

[0038] In the following text, the direction intersecting the plane defined by the first direction DR1 and the second direction DR2 is defined as the third direction DR3. The third direction DR3 may intersect the plane defined by the first direction DR1 and the second direction DR2 substantially perpendicularly. In this specification, "when viewed from a plane" can mean the state of being viewed from the third direction DR3.

[0039] Multiple first guide grooves GG1 may be defined on the edge of the mask frame MF. An inner surface IS of the mask frame MF, opposite the outer surface OS of the mask frame MF, defines a first opening OP1. The outer surface OS may be defined as the edge of the mask frame MF. The first guide grooves GG1 may be defined on the outer surface OS of the mask frame MF.

[0040] The first guide groove GG1 can be formed by recessing a predetermined depth from the outer surface OS of the mask frame MF toward the inner surface IS of the mask frame MF. The first guide groove GG1 can extend on the third direction DR3.

[0041] An opening piece (OPS) can be disposed on a mask frame (MF). The opening piece (OPS) can have a plane defined by a first direction (DR1) and a second direction (DR2). The opening piece (OPS) can have a quadrilateral shape, having side surfaces extending in the first direction (DR1) and side surfaces extending in the second direction (DR2), but the shape of the opening piece (OPS) can be any shape other than a quadrilateral shape.

[0042] Multiple second openings OP2 can be defined within an opening plate OPS. The second openings OP2 can be arranged in a first direction DR1 and a second direction DR2. When viewed in a plane, the second openings OP2 can overlap with the first opening OP1. The second openings OP2 can have a rectangular shape, but their shape can be any shape other than a rectangle.

[0043] The connecting groove CG can be defined on the upper surface of the opening piece OPS, adjacent to the edge of the opening piece OPS. The connecting groove CG can be formed by recessing a predetermined depth from the upper surface of the opening piece OPS toward the lower surface of the opening piece OPS.

[0044] The connecting groove CG can extend along the edge of the opening piece OPS. The connecting groove CG can have a single closed curve shape that is rectangular, but the shape of the connecting groove CG can be any shape other than a single closed curve shape that is rectangular. The function of the connecting groove CG will be described in detail below. The second opening OP2 can be set in the area defined by the connecting groove CG.

[0045] Multiple second guide grooves GG2 may be defined at the edge of the opening piece OPS. The edge of the opening piece OPS may be defined as a side surface defining a quadrilateral shape (e.g., a square shape) of the opening piece OPS. The second guide grooves GG2 may be formed by recessing at the edge of the opening piece OPS toward a predetermined depth toward the connecting groove CG. When viewed in a plane, the second guide grooves GG2 may overlap with the first guide grooves GG1.

[0046] Based on the third-party DR3, the opening piece OPS can have a thickness less than that of the mask frame MF. For example, the opening piece OPS can have a thickness from 10 μm to 150 μm. The opening piece OPS can include metallic materials. For example, the opening piece OPS can include Invar alloy or stainless steel.

[0047] A deposition mask DMK can be disposed on an aperture plate OPS. The deposition mask DMK can be supported by the aperture plate OPS. The deposition mask DMK can have a plane defined by a first direction DR1 and a second direction DR2. The deposition mask DMK can have a quadrilateral shape, having side surfaces extending in the first direction DR1 and side surfaces extending in the second direction DR2, but the shape of the deposition mask DMK can be any shape other than a quadrilateral shape.

[0048] Multiple cell regions CEA can be defined within a deposition mask DMK. The cell regions CEA can be arranged along a first direction DR1 and a second direction DR2. When viewed in a plane, the cell regions CEA can be superimposed on a second opening OP2. The cell regions CEA can have a shape corresponding to the second opening OP2. For example, the cell regions CEA can have a rectangular shape.

[0049] Multiple third openings OP3 may be defined in each of the cell regions CEA. The third openings OP3 may be arranged in the first direction DR1 and the second direction DR2. When viewed in a plane, the third openings OP3 may overlap with the second openings OP2. For example, the third openings OP3 may have a rectangular shape, but the shape of the third openings OP3 may be any shape other than a rectangle.

[0050] Multiple third guide trenches GG3 may be defined at the edge of the deposition mask DMK. The edge of the deposition mask DMK may be defined as the side defining the quadrilateral shape (e.g., a square shape) of the deposition mask DMK. The third guide trenches GG3 may be formed by recessing a predetermined depth from the edge of the deposition mask DMK toward the interior of the deposition mask DMK. When viewed in a plane, the third guide trenches GG3 may be superimposed on the second guide trenches GG2.

[0051] The deposition mask DMK may include a polymer mask PM and a conductive layer CDL disposed beneath the polymer mask PM. The polymer mask PM and the conductive layer CDL may have planes defined by a first direction DR1 and a second direction DR2. The polymer mask PM and the conductive layer CDL may have quadrilateral shapes, having side surfaces extending in the first direction DR1 and side surfaces extending in the second direction DR2.

[0052] The polymer mask PM can include plastic materials. For example, the polymer mask PM can include a polymer film. The polymer mask PM can include polymer materials such as polyimide (PI), polycarbonate (PC), or polyethylene terephthalate (PET). For example, based on the third-party DR3, the polymer mask PM can have a thickness of 5 μm to 15 μm.

[0053] Polymer masks (PMs) can be cheaper than metal masks. Furthermore, polymer masks (PMs) can exhibit lower corrosion rates and higher corrosion resistance compared to metal masks.

[0054] A conductive layer CDL can be disposed on the lower surface of a polymer mask PM. The conductive layer CDL can be configured to contact the lower surface of the polymer mask PM. The conductive layer CDL can include a metallic material. For example, the conductive layer CDL can include titanium (Ti), but the metallic material of the conductive layer CDL can include metallic materials other than titanium. Based on a third-party DR3, the conductive layer CDL can have… to The thickness.

[0055] The aforementioned third opening OP3 can be defined within the polymer mask PM and the conductive layer CDL. The aforementioned third guiding trench GG3 can be defined within the polymer mask PM and the conductive layer CDL.

[0056] An electrostatic chuck (ESC) can be mounted on a deposition mask (DMK). The ESC can have a plane defined by a first direction DR1 and a second direction DR2. The ESC can have a quadrilateral shape, with side surfaces extending in the first direction DR1 and side surfaces extending in the second direction DR2; however, the shape of the ESC can be any shape other than a quadrilateral. The ESC can generate electrostatic electricity, sometimes referred to as electrostatic force.

[0057] The transfer unit MOV can be mounted on the electrostatic chuck ESC. The transfer unit MOV can have a cylindrical shape extending in the third direction DR3. The transfer unit MOV can be attached to the upper part of the electrostatic chuck ESC. The transfer unit MOV can move in the third direction DR3 to transfer the electrostatic chuck ESC on the third direction DR3.

[0058] Figure 2 Is it as in Figure 1 The plan view of the mask frame MF, the opening plate OPS, and the deposition mask DMK as seen above.

[0059] Reference Figure 2 When viewed in a plane, the edge of the opening piece OPS can be positioned between the outer surface OS of the mask frame MF and the inner surface IS of the mask frame MF. When viewed in a plane, the second opening OP2 defined in the opening piece OPS can overlap with the first opening OP1. When viewed in a plane, the connecting groove CG defined in the opening piece OPS can be positioned between the inner surface IS of the mask frame MF and the edge of the opening piece OPS.

[0060] When viewed in a plane, the edge of the deposition mask DMK can be positioned between the outer surface OS of the mask frame MF and the inner surface IS of the mask frame MF. When viewed in a plane, the cell region CEA defined in the deposition mask DMK can be superimposed on the first opening OP1.

[0061] When viewed in a plane, the cell region CEA can be superimposed on the second opening OP2. When viewed in a plane, the third opening OP3, which is defined in the cell region CEA, can be superimposed on the corresponding second opening OP2 in the second opening OP2.

[0062] When viewed on a plane, the first guide groove GG1, the second guide groove GG2, and the third guide groove GG3 can be stacked on top of each other.

[0063] The deposition apparatus DEA may include multiple connecting strips CB configured to overlap with the connecting trench CG. The connecting strips CB may be disposed on the deposition mask DMK and may be adjacent to the edge of the deposition mask DMK. The connecting strips CB may be disposed along the edge of the deposition mask DMK.

[0064] The connecting strip CB may include a connecting strip CB extending in a first direction DR1 and a connecting strip CB extending in a second direction DR2. The ends of the connecting strip CB may be arranged adjacent to each other or may be arranged to contact each other. The connecting strip CB may be made of a metallic material. For example, the connecting strip CB may include Invar alloy or stainless steel.

[0065] Figure 3 This illustrates connecting the open plate OPS to... Figure 1 A diagram of the mask frame MF method shown.

[0066] For example, in Figure 3 The image shows a cross-section of a portion of the mask frame MF and a portion of the opening piece OPS as viewed from the first direction DR1.

[0067] Reference Figure 3 An opening piece (OPS) can be set on the mask frame MF. The lower surface of the opening piece (OPS) can contact the upper surface of the mask frame MF.

[0068] The opening piece (OPS) can be attached to the mask frame (MF) by laser welding. For example, a laser laser ablation (LAR) can be applied to the contact surface (CTS) between the opening piece (OPS) and the mask frame (MF). By melting the contact surface (CTS) between the opening piece (OPS) and the mask frame (MF) with laser LAR, the opening piece (OPS) can be attached to the mask frame (MF).

[0069] Figure 4A and Figure 4B This is used to illustrate connecting the deposition mask DMK to... Figure 1 A diagram illustrating the OPS method for opening the flap.

[0070] For example, in Figure 4A and Figure 4B The image shows a cross-section of a portion of the mask frame MF, a portion of the opening plate OPS, and a portion of the deposition mask DMK, as viewed from the first direction DR1.

[0071] Reference Figure 4A Connecting strips CB can be set on the deposition mask DMK. The connecting strips CB can be set to overlap with the connecting trench CG. The portion of the deposition mask DMK that overlaps with the connecting trench CG and the connecting strip CB can be recessed towards the connecting trench CG.

[0072] The portion of the deposition mask DMK that overlaps with the connecting trench CG can be recessed within the connecting trench CG. The connecting strip CB can be positioned at the recessed portion CGP of the deposition mask DMK that passes through the connecting trench CG.

[0073] If the connecting trench CG is not defined within the opening plate OPS, the deposition mask DMK is disposed on the flat opening plate OPS, and the connecting strip CB can be disposed on the flat deposition mask DMK. Therefore, the connecting strip CB can protrude above the deposition mask DMK. In this case, when the substrate, as described below, is positioned adjacent to the upper surface of the deposition mask DMK, the substrate may be damaged due to contact with the connecting strip CB.

[0074] In an embodiment of the inventive concept, the connecting strip CB can be disposed within the recess CGP of the deposition mask DMK. Therefore, the connecting strip CB can be positioned at least at the same height as the upper surface of the deposition mask DMK or below the upper surface of the deposition mask DMK. Because the connecting strip CB does not protrude above the deposition mask DMK, the substrate will not contact the connecting strip CB.

[0075] Reference Figure 4B The deposition mask DMK can be connected to the aperture piece OPS via a connecting strip CB. For example, a laser LAR can be provided for the deposition mask DMK and the aperture piece OPS stacked with the connecting trench CG. The connecting strip CB, the deposition mask DMK, and the aperture piece OPS are melted by the laser LAR, so that the connecting strip CB can be connected to the conductive layer CDL of the deposition mask DMK and the aperture piece OPS.

[0076] Figure 5 It shows along Figure 1 A diagram of the base support SSP that moves with the first guide groove GG1, the second guide groove GG2, and the third guide groove GG3.

[0077] For example, Figure 5 A portion of a mask frame MF, a portion of an opening piece OPS, and a portion of a deposition mask DMK are shown, which defines a first guide trench GG1, a second guide trench GG2, and a third guide trench GG3.

[0078] Reference Figure 5 The deposition apparatus DEA may also include a substrate support section (SSP). Multiple substrate support sections (SSPs) can be provided to support the substrate, and this configuration will be below... Figure 6 As shown in the diagram, the base support SSP can move on the third direction DR3. The base support SSP can reciprocate in the upward and downward directions, for example, reciprocating up and down on the third direction DR3.

[0079] When the substrate support SSP moves along the third direction DR3, it can move along the first guide trench GG1, the second guide trench GG2, and the third guide trench GG3. Therefore, when moving along the third direction DR3, the substrate support SSP can avoid contacting the mask frame MF, the opening plate OPS, and the deposition mask DMK.

[0080] The base support portion SSP may include a support portion SP for supporting the base and an extension portion EXP extending from the support portion SP on a third-direction DR3. Basically, the support portion SP is movable along the first guide groove GG1, the second guide groove GG2, and the third guide groove GG3.

[0081] Figure 6 It is along Figure 1 The sectional view shown is taken by line I-I'.

[0082] In the following text, refer to Figure 6 , Figure 7 , Figure 8 and Figure 9 The method of placing the deposition mask DMK on the substrate SUB will be described.

[0083] Reference Figure 6 An opening plate (OPS) can be set on the mask frame (MF), a deposition mask (DMK) can be set on the opening plate (OPS), and a substrate (SUB) can be set on the deposition mask (DMK). An electrostatic chuck (ESC) can be set on the substrate (SUB). The substrate (SUB) can have a plane defined by a first direction (DR1) and a second direction (DR2).

[0084] Multiple substrate support portions SSPs can support a substrate SUB. For example, the substrate SUB can be disposed on a support portion SP of the substrate support portion SSP. The support portion SP can be disposed below the portion of the substrate SUB adjacent to its edge to support the substrate SUB. The substrate SUB supported by the substrate support portion SSP can be disposed between the electrostatic chuck ESC and the deposition mask DMK.

[0085] When viewed in a plane, the base support portion SSP can be configured to overlap with the first guide groove GG1, the second guide groove GG2, and the third guide groove GG3. For example, the base support portion SSP can be configured to overlap with... Figure 1 The first guide trench GG1, the second guide trench GG2, and the third guide trench GG3 shown are stacked. Therefore, the substrate support SSP can be positioned along the edge of the electrostatic chuck ESC, the edge of the opening plate OPS, and the edge of the deposition mask DMK.

[0086] The support portion SP can extend in a direction parallel to the plane of the base SUB. (See reference...) Figure 1 and Figure 6The support portion SP, which is provided in the first guide groove GG1, the second guide groove GG2 and the third guide groove GG3 on the two sides opposite each other in the first direction DR1 of the electrostatic chuck ESC, the opening plate OPS and the deposition mask DMK, can extend in the first direction DR1.

[0087] Although not shown in the figure, the support portion SP disposed in the first guide groove GG1, the second guide groove GG2 and the third guide groove GG3 on opposite sides of the electrostatic chuck ESC, the opening plate OPS and the deposition mask DMK in the second direction DR2 can extend in the second direction DR2.

[0088] The electrostatic chuck (ESC) may include a housing (HOS), a plurality of first electrodes (EL1) disposed within the housing (HOS), and a plurality of second electrodes (EL2) disposed within the housing (HOS). The first electrodes (EL1) and second electrodes (EL2) may be alternately disposed in a first direction (DR1). Although not shown in the figure, the first electrodes (EL1) and second electrodes (EL2) may also be alternately disposed in a second direction (DR2).

[0089] The first electrode EL1 may have a first polarity. The second electrode EL2 may have a second polarity opposite to the first polarity. For example, the first polarity may be positive (+) and the second polarity may be negative (-). However, in an embodiment, the first polarity may be negative (-) and the second polarity may be positive (+).

[0090] The electrostatic chuck ESC can be connected to a power supply PS. The power supply PS can be connected to a first electrode EL1 and a second electrode EL2. The power supply PS may include a terminal defined as the anode and another terminal defined as the cathode. One terminal of the power supply PS is connected to the first electrode EL1, allowing the first electrode EL1 to have a positive polarity. The other terminal of the power supply PS is connected to the second electrode EL2, allowing the second electrode EL2 to have a negative polarity.

[0091] When a power source PS is applied to the electrostatic chuck ESC, electrostatic electricity (electrostatic force) can be generated in the electrostatic chuck ESC. For example, when the power source PS is applied to the first electrode EL1 and the second electrode EL2, electrostatic electricity (electrostatic force) can be generated.

[0092] The electrostatic chuck (ESC) can be transferred to DR3 via the transfer unit (MOV). The electrostatic chuck (ESC) can move towards the substrate (SUB).

[0093] An opening patch (OPS) disposed on a mask frame (MF) can contact the upper surface of the mask frame (MF). A deposition mask (DMK) disposed on the opening patch (OPS) can contact the upper surface of the opening patch (OPS). A conductive layer (CDL) of the deposition mask (DMK) can contact the upper surface of the opening patch (OPS).

[0094] AC power AC_PS can be applied to the deposition mask DMK. AC power AC_PS can also be applied to the conductive layer CDL of the deposition mask DMK. When positive and negative voltages (+, -) of AC power AC_PS are applied to the deposition mask DMK, they can alternate.

[0095] AC power AC_PS can be connected to the mask frame MF. AC power AC_PS can be applied to the conductive layer CDL through the mask frame MF and the opening plate OPS that are in contact with each other.

[0096] The substrate SUB can be grounded. For example, the substrate SUB may include a metal layer, and a ground terminal GND may be connected to the metal layer. Specifically, the metal layer of the substrate SUB may include wiring and pads (also called solder pads) connected to the wiring. The pads are connected to the ground terminal GND, allowing the substrate SUB to be grounded. The pads and wiring will be described below. Figure 11 As shown in the image.

[0097] Figure 7 It shows that the base SUB and Figure 6 The view shown depicts the contact state of the lower surface of the electrostatic chuck ESC.

[0098] Reference Figure 7 The electrostatic chuck (ESC) can move towards the substrate SUB on the third-party direction DR3 to become adjacent to the substrate SUB. The ESC generates electrostatic electricity, which can create an attractive force between the substrate SUB and the ESC. In other words, the ESC generates static electricity, thus creating an attractive electrostatic force between the substrate SUB and the ESC. Therefore, the substrate SUB can make close contact with the lower surface of the ESC.

[0099] When performing the deposition process, the substrate SUB should be secured. The substrate SUB can be secured to the electrostatic chuck ESC by electrostatic power generated from the electrostatic chuck ESC through the lower surface of the contact electrostatic chuck ESC.

[0100] For example, the base SUB is in Figure 6 The image shows the base SUB as flat, but in reality, when the base support SSP supports the edge of the base SUB, the base SUB may sag due to gravity. Because the base SUB is in contact with the lower surface of the electrostatic chuck ESC via electrostatic electricity, the base SUB can unfold flat without sagging.

[0101] Although not shown in the figure, the transfer unit MOV can rotate based on a rotation axis parallel to the third direction DR3 to rotate the electrostatic chuck ESC. The rotation of the electrostatic chuck ESC allows the substrate SUB to be aligned for proper stacking with the deposition mask DMK.

[0102] Figure 8 It is shown that Figure 7 The diagram shows the state in which the substrate SUB moves downward and is set on the deposition mask DMK. Figure 9 This shows the SUB setting near the base. Figure 8 The diagram shows the state of the deposition mask DMK.

[0103] Reference Figure 8 The electrostatic chuck (ESC) can be moved toward the deposition mask (DMK) via the transfer unit (MOV). Additionally, the substrate (SUB) can be moved along the third direction (DR3) via the substrate support (SSP) and can also be moved toward the deposition mask (DMK).

[0104] The substrate support portion SSP can move along the first guide trench GG1, the second guide trench GG2, and the third guide trench GG3. The substrate support portion SSP can be disposed within the first guide trench GG1, the second guide trench GG2, and the third guide trench GG3, such that the substrate SUB is positioned adjacent to the deposition mask DMK. For example, the support portion SP can be disposed within the first guide trench GG1, the second guide trench GG2, and the third guide trench GG3, such that the substrate SUB is positioned adjacent to the deposition mask DMK.

[0105] The electrostatic discharge generated by the electrostatic chuck (ESC) is blocked by the metal layer of the substrate SUB and will not be transmitted to the deposition mask (DMK). Therefore, a device is needed to pull the deposition mask (DMK) onto the substrate SUB.

[0106] In an embodiment of the inventive concept, because the substrate SUB is grounded and positive and negative voltages (+, -) are alternately applied to the conductive layer CDL, electrostatic electricity can be generated between the substrate SUB and the conductive layer CDL. That is, by grounding the substrate SUB and applying positive and negative voltages (+, -) alternately to the conductive layer CDL, an attractive force can be generated between the substrate SUB and the conductive layer CDL.

[0107] The deposition mask DMK and the aperture plate OPS may sag due to gravity. The deposition mask DMK and the aperture plate OPS can be moved toward the substrate SUB by the attractive force generated between the substrate SUB and the conductive layer CDL.

[0108] Reference Figure 8 and Figure 9The conductive layer CDL of the deposition mask DMK can move towards the substrate SUB due to the attractive force generated between the substrate SUB and the conductive layer CDL. As the conductive layer CDL moves towards the substrate SUB, the polymer mask PM disposed on the conductive layer CDL can also move towards the substrate SUB.

[0109] The deposition mask DMK can be moved toward the substrate SUB, allowing the deposition mask DMK to be positioned close to the substrate SUB. Therefore, the spacing between the deposition mask DMK and the substrate SUB can be minimized. The state of the deposition mask DMK can be defined as the state in which the deposition mask DMK is placed on the substrate SUB.

[0110] The deposition mask DMK can be positioned close to or in contact with the substrate SUB. The polymer mask PM can also be positioned close to or in contact with the substrate SUB. A drooping deposition mask DMK can be moved upwards toward the substrate SUB to unfold more flat. More specifically, due to the attraction between the drooping deposition mask DMK and the substrate SUB, the drooping deposition mask DMK can be positioned as follows: Figure 9 The area shown becomes flat to reduce or eliminate any space between the drooping deposition mask DMK and the substrate SUB (see [link]). Figure 8 ).

[0111] When performing a deposition process, the deposition mask DMK must be positioned close to the substrate SUB to ensure proper material delivery within the deposition zone. See below for further details. Figure 13A and Figure 13B Describe the deposition process.

[0112] In an embodiment of the inventive concept, by providing a conductive layer CDL beneath the polymer mask PM, the polymer mask PM can be positioned close to the substrate SUB via the conductive layer CDL. Therefore, the deposition process can be performed normally.

[0113] AC power AC_PS can be applied to the opening plate OPS through the mask frame MF. The substrate SUB is grounded, and alternating positive and negative voltages (+, -) are applied to the opening plate OPS, thereby generating an electrostatic force between the substrate SUB and the opening plate OPS. In other words, an attractive force can also be generated between the substrate SUB and the opening plate OPS.

[0114] The opening piece OPS can move towards the base SUB by the attraction generated between the base SUB and the opening piece OPS. A drooping opening piece OPS can move upward towards the base SUB to unfold more flat.

[0115] Figure 10 It is used to explain when Figure 9The image shows a view of the deposition process performed when the deposition mask DMK is placed on the substrate SUB.

[0116] Reference Figure 10 The crucible CR can be positioned under the mask frame MF to face the deposition mask DMK. For example, one crucible CR is shown, but in practice, multiple crucible CRs can be positioned under the deposition mask DMK.

[0117] Nozzle NZ can be positioned on crucible CR. Deposited material DPM can be contained within crucible CR. Although not shown in the figure, a heat source for heating crucible CR can be positioned within crucible CR. Although not shown in the figure, crucible CR, deposition mask DMK, opening plate OPS, mask frame MF, and electrostatic chuck ESC can be positioned within a vacuum chamber used in the manufacturing process of the display device.

[0118] The crucible CR can be heated, the deposited material DPM can be evaporated, and the deposited material DPM can be sprayed upwards through the nozzle NZ. The evaporated deposited material DPM can pass through the first opening OP1, the second opening OP2, and the third opening OP3 to be provided to the substrate SUB. The deposited material DPM may include materials for forming a light-emitting layer. The deposited material DPM is disposed on the lower surface of the substrate SUB, allowing the formation of a light-emitting layer. The light-emitting layer will be on the lower surface... Figure 12 As shown in the image.

[0119] Figure 11 It is through the use of Figure 1 The diagram shows a plan view of a display panel DP manufactured by the DEA deposition equipment shown.

[0120] Reference Figure 11 The display panel DP may have a rectangular shape, having a long side extending in the first direction DR1 and a short side extending in the second direction DR2, but the shape of the display panel DP may be any shape other than a rectangular shape. The display panel DP may include a display section DA and a non-display section NDA surrounding the display section DA.

[0121] Display panel DP can be a light-emitting display panel. Display panel DP can be an organic light-emitting display panel or a quantum dot light-emitting display panel. The light-emitting layer of an organic light-emitting display panel may include organic light-emitting materials. The light-emitting layer of a quantum dot light-emitting display panel may include quantum dots and / or quantum rods. Hereinafter, display panel DP is described as an organic light-emitting display panel.

[0122] The display panel DP may include multiple pixels PX, multiple scan lines SL1 to SLm, multiple data lines DL1 to DLn, multiple emission lines ECL1 to ECLm, a first control line CSL1 and a second control line CSL2, a first power line PL1 and a second power line PL2, a connecting line CNL, and multiple pads PD, where m and n are natural numbers.

[0123] Pixels (PX) can be located in the display unit (DA). Scan driver (SDV) and transmit driver (EDV) can each be located in the non-display unit (NDA), adjacent to the long side of the display panel (DP). Data driver (DDV) can be located in the non-display unit (NDA), adjacent to one of the short sides of the display panel (DP). When viewed in a flat surface, the data driver (DDV) can be located adjacent to the bottom edge of the display panel (DP).

[0124] Scan lines SL1 to SLm can extend in the second direction DR2 and can connect to the pixel PX and the scan driver SDV. Data lines DL1 to DLn can extend in the first direction DR1 to connect to the pixel PX and the data driver DDV. Transmit lines ECL1 to ECLm extend in the second direction DR2 and can connect to the pixel PX and the transmit driver EDV.

[0125] The first power line PL1 may extend along the first direction DR1 and may be disposed in the non-display unit NDA. The first power line PL1 may be disposed between the display unit DA and the transmit driver EDV. However, in an embodiment, the first power line PL1 may be disposed between the display unit DA and the scan driver SDV.

[0126] The connecting line CNL can extend along the second direction DR2 and can be arranged along the first direction DR1. The connecting line CNL can be connected to the first power line PL1 and the pixel PX. A first voltage can be applied to the pixel PX through the first power line PL1 and the connecting line CNL connected to each other.

[0127] The second power line PL2 can be located in the non-display unit NDA. The second power line PL2 can extend along the long side of the display panel DP and along the other short side of the display panel DP where the data driver DDV is not located. The second power line PL2 can be located outside the scan driver SDV and the transmit driver EDV.

[0128] Although not shown, the second power line PL2 can extend toward the display unit DA to connect to the pixel PX. A second voltage having a level lower than the first voltage can be applied to the pixel PX through the second power line PL2.

[0129] When viewed in a flat surface, the first control line CSL1 can be connected to the scan driver SDV and can extend towards the lower end of the display panel DP. When viewed in a flat surface, the second control line CSL2 can be connected to the transmit driver EDV and can extend towards the lower end of the display panel DP. The data driver DDV can be positioned between the first control line CSL1 and the second control line CSL2.

[0130] The pad PD can be placed on the display panel DP. The pad PD can be closer to the bottom of the display panel DP than the data driver DDV. The data driver DDV, the first power line PL1, the second power line PL2, the first control line CSL1, and the second control line CSL2 can be connected to the pad PD. Data lines DL1 to DLn can be connected to the data driver DDV, and the data driver DDV can be connected to the pad PD corresponding to the data lines DL1 to DLn.

[0131] Figure 1 Each of the cell regions CEA shown can correspond to Figure 11 The display panel DP shown is illustrated. The light-emitting elements of a single display panel DP can be formed using a single cell area CEA. Multiple display panel DPs can be formed using cell areas CEAs of a deposition mask DMK.

[0132] The cell area corresponding to the display panel (DP) can be defined within the aforementioned substrate (SUB). After the light-emitting element is formed in the cell area, the cell area can be cut. Therefore, it is possible to manufacture... Figure 11 The display panel DP shown is shown.

[0133] Although not shown in the figure, the timing controller for controlling the operation of the scan driver SDV, data driver DDV, and transmit driver EDV, as well as the voltage generation unit for generating the first and second voltages, can be mounted on the printed circuit board. The timing controller and voltage generation unit can be connected to the corresponding pad PD via the printed circuit board.

[0134] The scan driver SDV generates multiple scan signals, which are applied to pixel PX via scan lines SL1 to SLm. The data driver DDV generates multiple data voltages, which are applied to pixel PX via data lines DL1 to DLn. The transmit driver EDV generates multiple transmit signals, which are applied to pixel PX via transmit lines ECL1 to ECLm.

[0135] In response to a scan signal, pixel PX can provide a data voltage. In response to a transmit signal, pixel PX can display an image by emitting light with a brightness corresponding to the data voltage. The emission time of pixel PX can be controlled by the transmit signal.

[0136] The aforementioned wiring may include data lines DL1 to DLn. The pads connected to the aforementioned wiring may include... Figure 11 The pad PD shown is a display panel DP on which no light-emitting layer of pixels PX is formed. This panel can be defined as the substrate SUB described above.

[0137] See below for reference. Figure 13A and Figure 13B Describes the cross-sectional structure of a substrate SUB without a light-emitting layer formed thereon. A pad PD is formed on the substrate SUB, and the substrate SUB can be defined in a state where no printed circuit board is connected. The pad PD is connected to the ground terminal GND, so that the pad PD and data lines DL1 to DLn can be grounded.

[0138] Figure 12 It is shown through examples Figure 11 The image shows a cross-section of a pixel PX.

[0139] Reference Figure 12 The pixel PX is disposed on the substrate BS and may include a transistor TR and a light-emitting element OLED. The transistor TR and light-emitting element OLED of the pixel PX may be connected to the aforementioned data lines DL1 to DLn and the first power line PL1 and the second power line PL2.

[0140] The transistor TR of pixel PX and the light-emitting element OLED can be connected to the aforementioned pad PD via data lines DL1 to DLn and the first power line PL1 and the second power line PL2. The transistor TR of pixel PX can be connected to the pad PD via data lines DL1 to DLn.

[0141] An OLED (Optical Display Cell) may include a first electrode AE, a second electrode CE, a hole control layer HCL, an electron control layer ECL, and an emissive layer EML. The first electrode AE ​​may be an anode electrode, and the second electrode CE may be a cathode electrode.

[0142] The transistor TR and the light-emitting element OLED can be disposed on the substrate BS. For example, a transistor TR is shown, but in reality, a pixel PX may include multiple transistor TRs for driving the light-emitting element OLED and at least one capacitor.

[0143] The display unit DA may include a light-emitting unit PA corresponding to a pixel PX and a non-light-emitting unit NPA surrounding the light-emitting unit PA. An OLED light-emitting element may be disposed within the light-emitting unit PA.

[0144] The substrate BS may include a flexible plastic substrate. For example, the substrate BS may include transparent polyimide (PI). A buffer layer BFL is disposed on the substrate BS, and the buffer layer BFL may be an inorganic layer.

[0145] Semiconductor patterns can be disposed on the buffer layer BFL. The semiconductor pattern may include polycrystalline silicon. However, in this embodiment, the semiconductor pattern may include amorphous silicon or metal oxide.

[0146] Semiconductor patterns can be doped with N-type or P-type dopants. Semiconductor patterns can include highly doped and lightly doped regions. The conductivity of the highly doped region is greater than that of the lightly doped region, and it can essentially serve as the source (S) and drain (D) of a transistor TR. The lightly doped region can essentially correspond to the active region (A) or channel of the transistor TR.

[0147] The source (S), active region (A), and drain (D) of transistor TR can be formed from a semiconductor pattern. A first insulating layer (INS1) can be disposed on the semiconductor pattern. The gate (G) of transistor TR can be disposed on the first insulating layer (INS1). A second insulating layer (INS2) can be disposed on the gate (G). A third insulating layer (INS3) can be disposed on the second insulating layer (INS2).

[0148] A connecting electrode CNE is disposed between the transistor TR and the light-emitting element OLED to connect the transistor TR and the light-emitting element OLED. The connecting electrode CNE may include a first connecting electrode CNE1 and a second connecting electrode CNE2.

[0149] The first connecting electrode CNE1 can be disposed on the third insulating layer INS3, and can be connected to the drain electrode D through the first contact hole CH1 defined in the first insulating layer INS1 to the third insulating layer INS3. The fourth insulating layer INS4 can be disposed on the first connecting electrode CNE1. The fifth insulating layer INS5 can be disposed on the fourth insulating layer INS4.

[0150] The second connecting electrode CNE2 can be disposed on the fifth insulating layer INS5. The second connecting electrode CNE2 can be connected to the first connecting electrode CNE1 through the second contact hole CH2 defined in the fourth insulating layer INS4 and the fifth insulating layer INS5. The sixth insulating layer INS6 can be disposed on the second connecting electrode CNE2. The first insulating layer INS1 to the sixth insulating layer INS6 can be inorganic layers or organic layers.

[0151] A first electrode AE ​​can be disposed on a sixth insulating layer INS6. The first electrode AE ​​can be connected to a second connecting electrode CNE2 through a third contact hole CH3 defined in the sixth insulating layer INS6. A pixel defining film PDL exposing a predetermined portion of the first electrode AE ​​can be disposed on the first electrode AE ​​and the sixth insulating layer INS6. An opening PX_OP for exposing the predetermined portion of the first electrode AE ​​can be defined in the pixel defining film PDL.

[0152] The hole control layer HCL can be disposed on the first electrode AE ​​and the pixel defining film PDL. The hole control layer HCL can be commonly disposed in the light-emitting part PA and the non-light-emitting part NPA. The hole control layer HCL may include a hole transport layer and a hole injection layer.

[0153] The light-emitting layer (EML) can be disposed on the hole control layer (HCL). The EML can be disposed in the region corresponding to the opening (PX_OP). The EML can comprise organic and / or inorganic materials. The EML can produce any of the following: red, green, and blue light.

[0154] The electronic control layer (ECL) can be disposed on the light-emitting layer (EML) and the hole control layer (HCL). The ECL can also be commonly disposed in the light-emitting part (PA) and the non-light-emitting part (NPA). The ECL may include an electron transport layer and an electron injection layer.

[0155] The second electrode CE can be disposed on the electronic control layer ECL. The second electrode CE can also be commonly disposed in the pixel PX. The layer from the buffer layer BFL to the light-emitting element OLED can be defined as the pixel layer.

[0156] A thin-film sealing layer (TFE) can be disposed on the light-emitting element (OLED). The TFE can also be disposed on the second electrode (CE) to cover the pixel (PX). The TFE may include at least two inorganic layers and an organic layer disposed between the inorganic layers. The inorganic layers protect the pixel (PX) from moisture / oxygen. The organic layers protect the pixel (PX) from foreign substances such as dust particles.

[0157] A first voltage can be applied to the first electrode AE ​​via transistor TR, and a second voltage with a level lower than the first voltage can be applied to the second electrode CE. Holes and electrons injected into the light-emitting layer EML combine to form excitons, and when the excitons transition to the ground state, the light-emitting element OLED can emit light.

[0158] Figure 13A It is used for explanation Figure 10 A diagram showing the deposition process. Figure 13B This is a diagram used to illustrate a deposition process performed in a state where the deposition mask is not placed on the substrate.

[0159] For example, Figure 13A and Figure 13B It corresponds to Figure 12 A sectional view, and any third opening OP3 is shown in Figure 13A and Figure 13B In Chinese. For ease of explanation, Figure 10 The substrate SUB and deposition mask DMK shown are in Figure 13A and Figure 13B It is shown in an upside-down format.

[0160] Reference Figure 13A The substrate SUB is defined from the substrate BS to the first electrode AE. As described above, the transistor TR can be connected to the pad PD via data lines DL1 to DLn. That is, the substrate SUB may include the data lines DL1 to DLn defined by the above wiring and the pad PD connected to the data lines DL1 to DLn.

[0161] The deposition mask DMK can be set to face the substrate SUB. The deposition mask DMK can also be set to be close to the substrate SUB. Figure 13A The location of the deposition mask DMK shown can be substantially corresponding to Figure 9 The location of the deposition mask DMK is shown in the figure.

[0162] The deposition material DPM can be deposited on the substrate SUB through the third opening OP3 defined in the deposition mask DMK. The luminescent layer EML can be formed on the substrate SUB by depositing the material DPM.

[0163] Reference Figure 13B The deposition mask DMK does not need to be set close to the substrate SUB. For example, with Figure 13A Compared to the position of the deposition mask DMK shown, Figure 13B The deposition mask DMK shown can be spaced further away from the substrate SUB. Figure 13B The location of the deposition mask DMK shown can correspond to Figure 8 The location of the deposition mask DMK is shown in the figure.

[0164] The deposited material DPM can be ejected from the nozzle NZ at a predetermined ejection angle. Because the deposited material DPM is ejected at a predetermined ejection angle, when the deposition mask DMK is spaced further away from the substrate SUB, the deposited material DPM may be deposited on unwanted areas. That is, the luminescent layer EML' may form abnormally.

[0165] Reference Figure 13A In an embodiment of the inventive concept, because the deposition mask DMK is positioned close to the substrate SUB, a normal light-emitting layer EML can be formed even if the deposition material DPM is sprayed at a predetermined spray angle.

[0166] Figure 14 , Figure 15 and Figure 16 This is a view showing deposition apparatus DEA_1, DEA_2, and DEA_3 according to embodiments of the inventive concept.

[0167] For example, Figures 14 to 16 To correspond to Figure 9A cross-section is shown. In the following description, the construction will be based primarily on a construction different from that of the DEA deposition apparatus. Figures 14 to 16 The diagram shows the construction of deposition devices DEA_1, DEA_2, and DEA_3. In practice, except for the power application method, the construction can be the same as that of deposition device DEA.

[0168] Reference Figure 14 In the deposition apparatus DEA_1, AC power AC_PS can be applied to the aperture plate OPS. AC power AC_PS can then be applied to the conductive layer CDL of the deposition mask DMK via the aperture plate OPS. The substrate SUB can be grounded. Therefore, a constant current can be generated between the conductive layer CDL to which AC power AC_PS is applied and the substrate SUB.

[0169] Reference Figure 15 and Figure 16 Voltage can be applied to the substrate (SUB) and the deposition mask (DMK). For example, voltages of different polarities can be applied to the conductive layer (CDL) of the substrate (SUB) and the deposition mask (DMK). Therefore, the substrate (SUB) and the conductive layer (CDL) can be charged with different polarities.

[0170] Reference Figure 15 In the deposition apparatus DEA_2, a positive voltage (i.e., a positive voltage) V+ can be applied to the substrate SUB, and a negative voltage (i.e., a negative voltage) V- can be applied to the conductive layer CDL. The positive voltage V+ can be applied to the pad PD of the substrate SUB.

[0171] A negative voltage V- can be applied to the conductive layer CDL through the mask frame MF and the opening plate OPS. Therefore, an attraction is generated between the substrate SUB and the deposition mask DMK, allowing the deposition mask DMK to be placed on the substrate SUB.

[0172] Reference Figure 16 In the deposition apparatus DEA_3, a negative voltage V- can be applied to the substrate SUB, and a positive voltage V+ can be applied to the conductive layer CDL. The negative voltage V- can be applied to the pad PD of the substrate SUB.

[0173] A positive voltage V+ can be applied to the conductive layer CDL through the mask frame MF and the opening plate OPS. Therefore, an attraction is generated between the substrate SUB and the deposition mask DMK, allowing the deposition mask DMK to be mounted on the substrate SUB.

[0174] According to embodiments of the inventive concept, when the substrate is grounded and AC power, in which positive and negative voltages alternately, is applied to the deposition mask, the deposition mask can be more easily placed on the substrate. As a result, the spacing between the substrate and the deposition mask can be minimized.

[0175] Although embodiments of the inventive concept have been described, it should be understood that the inventive concept is not limited to these embodiments, and various changes and modifications can be made by those skilled in the art within the spirit and scope of the claimed inventive concept.

Claims

1. A deposition apparatus, the deposition apparatus comprising: A mask frame, wherein a first opening is defined; An opening is provided on the mask frame, and a second opening is defined therein that overlaps with the first opening; A deposition mask is disposed on the opening plate, and wherein a plurality of third openings are defined thereon overlapping the second opening; as well as An electrostatic chuck is disposed on the deposition mask, and a substrate is disposed thereon. The substrate is disposed on the surface of the electrostatic chuck, and AC power is applied to the deposition mask and the substrate is grounded to generate an electrostatic force between the deposition mask and the substrate.

2. The deposition apparatus as described in claim 1, wherein, The substrate includes: Multiple cabling lines; and Multiple pads are connected to the wiring. The pad is grounded.

3. The deposition apparatus as described in claim 1, wherein, The deposition mask includes: Polymer masks; and A conductive layer is disposed on the surface of the polymer mask. The AC power is applied to the conductive layer.

4. The deposition apparatus as described in claim 3, wherein, The polymer mask comprises a polymer film.

5. The deposition apparatus as described in claim 3, wherein, The deposition mask is positioned close to the substrate due to the electrostatic force between the conductive layer and the substrate.

6. The deposition apparatus as claimed in claim 3, wherein, Each of the mask frame and the deposition mask is in contact with the opening plate, and the AC power is applied to the conductive layer through the mask frame and the opening plate.

7. The deposition apparatus of claim 6, wherein, The AC power is connected to the mask frame.

8. The deposition apparatus of claim 6, wherein, The AC power is connected to the opening plate.

9. The deposition apparatus as claimed in claim 1, wherein, The electrostatic chuck includes: The first electrode has a first polarity; and The second electrode has a second polarity opposite to that of the first electrode. The substrate contacts the surface of the electrostatic chuck through the electrostatic force generated by the first electrode and the second electrode.

10. The deposition apparatus of claim 1, further comprising a connecting strip disposed on the deposition mask. in, The connecting strip is positioned adjacent to the edge of the deposition mask.

11. The deposition apparatus of claim 10, wherein, The deposition mask is connected to the opening plate via the connecting strip.

12. The deposition apparatus of claim 10, wherein, The connecting groove, which overlaps with the connecting strip, is defined on the surface of the opening piece, adjacent to the edge of the opening piece.

13. The deposition apparatus of claim 12, wherein, The portion of the deposition mask that overlaps with the connecting trench is recessed into the connecting trench, and the connecting strip is disposed at the recessed portion of the deposition mask that is recessed into the connecting trench.

14. The deposition apparatus of claim 13, wherein, The connecting strip is positioned at a height equal to or lower than the surface of the deposition mask.

15. The deposition apparatus of claim 1, further comprising a substrate support portion supporting the edge of the substrate.

16. The deposition apparatus of claim 15, wherein, The first guide groove is defined at the edge of the mask frame, and when viewed in a plane, the first guide groove overlaps with the base support. The second guide groove is defined at the edge of the opening piece, and when viewed in a plane, the second guide groove overlaps with the first guide groove. The third guiding trench is defined at the edge of the deposition mask, and when viewed in a plane, the third guiding trench overlaps with the second guiding trench. When the base support moves up and down, the base support moves along the first guide groove, the second guide groove and the third guide groove.

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