Semiconductor annealing equipment and its control method

Abstract

The present invention provides a semiconductor annealing device and a control method thereof. The semiconductor annealing device includes 3N positioning parts, 3N adjusting parts, a movement control part, a first heating part and a second heating part. The free end of each second supporting structure of the 3N positioning parts is close to the edge of the process loading area surrounded, increasing the heating area of the target wafer, which is beneficial to heating the front and back sides of the target wafer simultaneously, improving the process efficiency and heating uniformity; the distance between adjacent second supporting structures allows the first supporting structure of the adjusting part to pass through, and the movement control part is set to control the movement of the 3N adjusting parts, so as to drive the 3N first supporting structures to move, thereby quickly adjusting the relative position relationship between the target wafer and the process loading area, and improving the process efficiency.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor device manufacturing, and particularly to a semiconductor annealing apparatus and a control method thereof. Background Art

[0002] The wafer stage of the semiconductor annealing apparatus in the prior art holds the wafer by completely contacting the back surface of the wafer. Since heating devices cannot be arranged below the wafer stage, if the back surface of the wafer needs to be heated, the wafer needs to be removed, flipped and then placed back on the wafer stage, which significantly affects the efficiency of the annealing process.

[0003] Therefore, it is necessary to develop a new type of semiconductor annealing apparatus and a control method thereof to solve the above problems existing in the prior art. Summary of the Invention

[0004] The purpose of the present invention is to provide a semiconductor annealing apparatus and a control method thereof, which are beneficial to improving the process efficiency and heating uniformity.

[0005] To achieve the above purpose, the semiconductor annealing apparatus of the present invention includes:

[0006] 3N adjustment parts surrounding a transfer and holding area capable of accommodating a target wafer, each of the adjustment parts including a first supporting structure, and the free end of the first supporting structure being close to the center of the transfer and holding area;

[0007] 3N positioning parts surrounding a process holding area capable of accommodating the target wafer, each of the positioning parts including a second supporting structure, the free end of the second supporting structure being close to the edge of the process holding area, and the distance between adjacent second supporting structures allowing the first supporting structure to pass through;

[0008] A movement control part communicatively connected to the 3N adjustment parts to drive the 3N first supporting structures to move, so as to adjust the relative position relationship between the target wafer and the process holding area; N is a positive integer greater than or equal to 1.

[0009] The beneficial effect of the semiconductor annealing apparatus of the present invention lies in that: the free end of each second supporting structure of the 3N positioning parts is close to the edge of the surrounded process holding area, increasing the heating area of the target wafer, which is beneficial to subsequent heating of the front and back surfaces of the target wafer simultaneously, improving the process efficiency and heating uniformity; the distance between adjacent second supporting structures allows the first supporting structure of the adjustment part to pass through, and the movement control part is provided to control the movement of the 3N adjustment parts, which can drive the 3N first supporting structures to move, so as to quickly adjust the relative position relationship between the target wafer and the process holding area, improving the process efficiency.

[0010] Preferably, the semiconductor annealing equipment further includes a first heating part and a second heating part, which are respectively arranged on both sides of the process loading area to heat the front and back sides of the target wafer.

[0011] Preferably, the second supporting structure is a light-transmitting and heat-conducting supporting structure. The beneficial effect is that it improves the heating uniformity of the target wafer.

[0012] Preferably, the second supporting structure includes a convex structure to contact the target wafer. The beneficial effect is that it increases the heat-receiving area of the target wafer.

[0013] Preferably, it further includes a position information acquisition part communicatively connected to the mobile control part. The position information acquisition part is arranged on at least one side of the process loading area to acquire and feedback the position information of the target wafer to the mobile control part. The beneficial effect is that it accurately positions the target wafer to the process loading area.

[0014] Preferably, each adjustment part further includes a first inclined structure inclined relative to the first supporting structure. The first inclined structure and the first supporting structure intersect to form a first limiting area, and the 3N first limiting areas define the range of the transfer loading area. The beneficial effect is that it avoids unnecessary position deviation of the target wafer.

[0015] Preferably, each positioning part further includes a second inclined structure inclined relative to the second supporting structure. The second inclined structure and the second supporting structure are connected to form a second limiting area, and the 3N second limiting areas define the range of the process loading area. The beneficial effect is that it ensures that the target wafer is limited within the range of the process loading area and prevents unnecessary position deviation.

[0016] Further preferably, the second inclined structure is a light-transmitting and heat-conducting inclined structure. The beneficial effect is that it improves the heating uniformity of the target wafer.

[0017] Further preferably, the 3N adjustment parts and / or the 3N positioning parts are distributed in a circular array.

[0018] Further preferably, the included angle formed between any two adjacent adjustment parts and positioning parts is equal.

[0019] The control method of the semiconductor annealing equipment of the present invention includes the following steps:

[0020] S1: Control the 3N adjustment parts and the 3N positioning parts by the mobile control part to enclose an initial positioning area, and place the target wafer in the initial positioning area;

[0021] S2: Determine whether position adjustment of the target wafer is required through the movement control unit;

[0022] S3: Control the 3N adjustment units to move away from the 3N positioning units, so that each of the first support structures supports the target wafer, and so that each of the second support structures is disengaged from the contact relationship with the target wafer;

[0023] S4: Control the 3N adjustment units to perform position adjustment through the movement control unit until it is determined through the movement control unit that the center of the target wafer coincides with the center of the process load area;

[0024] S5: While controlling the 3N adjustment units to move towards the 3N positioning units through the movement control unit, maintain the coincidence of the center of the target wafer and the center of the process load area until the target wafer comes into contact with each of the second support structures, and each of the first support structures is disengaged from the contact relationship with the target wafer.

[0025] The beneficial effect of the control method of the semiconductor annealing equipment of the present invention is that: through the steps S2 - S5, the relative position relationship between the target wafer and the process load area can be quickly adjusted, improving the process efficiency.

[0026] Preferably, after the step S5 is completed, the target wafer is heated through the first heating unit and the second heating unit. Its beneficial effect is that: it is beneficial to improve the process efficiency and heating uniformity.

[0027] Preferably, in the step S2, the step of determining whether position adjustment of the target wafer is required through the movement control unit includes: obtaining and feeding back the position information of the target wafer to the movement control unit through the position information acquisition unit, and the movement control unit determines whether position adjustment of the target wafer is required according to the position information of the target wafer fed back by the position information acquisition unit. Description of the Drawings

[0028] Figure 1 It is a schematic diagram of the first working state of several adjustment units in some embodiments of the present invention;

[0029] Figure 2 It is a schematic diagram of the second working state of several adjustment units in some embodiments of the present invention;

[0030] Figure 3 It is a schematic diagram of the first working state of several positioning units in some embodiments of the present invention;

[0031] Figure 4 It is a schematic diagram of the second working state of several positioning units in some embodiments of the present invention;

[0032] Figure 5 Schematic diagrams of the working states of several adjustment parts and several positioning parts according to some embodiments of the present invention. Detailed implementation manners

[0033] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Apparently, the described embodiments are some but not all of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without making creative efforts belong to the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein shall have the ordinary meanings understood by those of ordinary skill in the art to which the present invention pertains. The words such as "including" used herein mean that the elements or items appearing before this word cover the elements or items listed after this word and their equivalents, without excluding other elements or items.

[0034] The embodiments of the present invention provide a semiconductor annealing device to improve process efficiency and heating uniformity.

[0035] The semiconductor annealing device of the embodiments of the present invention includes 3N adjustment parts and 3N positioning parts. N is a positive integer greater than or equal to 1.

[0036] Figure 1 Schematic diagram of the first working state of several adjustment parts according to some embodiments of the present invention. Figure 2 Schematic diagram of the second working state of several adjustment parts according to some embodiments of the present invention.

[0037] Referring to Figure 1 and Figure 2 , three adjustment parts 10 enclose a transfer and bearing area 1 capable of accommodating a target wafer 3. Each of the adjustment parts 10 includes a first supporting structure 101. The free end of the first supporting structure 101 is an adjustment part free end 104, and the adjustment part free end 104 is close to the center of the transfer and bearing area 1.

[0038] Specifically, the adjustment part free end 104 is close to the center of the transfer and bearing area 1, effectively increasing the contact area between the first supporting structure 101 and the target wafer 3, and further ensuring the movement stability of the target wafer 3 during the transfer process.

[0039] Specifically, the contact manner between the first supporting structure 101 and the target wafer 3 is not limited, and can be at least one of surface contact, line contact and point contact, as long as the cooperation between several first supporting structures 101 can ensure the stability of the target wafer 3 during the transfer process.

[0040] Specifically, the material of the first supporting structure 101 is not limited. The material and surface properties of the first supporting structure 101 should not damage the target wafer 3 and avoid generating wafer stress.

[0041] In some specific embodiments, the material of the first supporting structure 101 is quartz.

[0042] In some embodiments, all the first supporting structures 101 are distributed in a circular array to further ensure the smooth movement of the target wafer 3 during the transfer process.

[0043] In some embodiments, referring to Figure 1 and Figure 2 , each adjusting part 10 further includes a first inclined structure 102 inclined relative to the first supporting structure 101. The first inclined structure 102 and the first supporting structure 101 intersect to form a first limiting area 103. All the first limiting areas 103 define the range of the transfer and bearing area 1 to prevent the target wafer 3 from undergoing unnecessary position offset. Even if the target wafer 3 undergoes position offset and contacts the first inclined structure 102, it can slide down to the top surface of the first supporting structure 101 under the action of its own gravity.

[0044] Specifically, the meaning that all the first limiting areas 103 define the range of the transfer and bearing area 1 is: referring to Figure 2 , the first limiting area 103 defines the limit position that the target wafer 3 can reach when it undergoes displacement along the top surface of the first supporting structure 101 towards the first inclined structure 102.

[0045] Specifically, the material of the first inclined structure 102 is not limited, as long as it can ensure the supporting strength for the first supporting structure 101.

[0046] In some embodiments, the first inclined structure 102 and the first supporting structure 101 are an integrated structure.

[0047] In some specific embodiments, the material of the first inclined structure 102 is quartz.

[0048] Figure 3 Schematic diagram of the first working state of several positioning parts in some embodiments of the present invention. Figure 4 Schematic diagram of the second working state of several positioning parts in some embodiments of the present invention.

[0049] Referring to Figure 3 and Figure 4, the three positioning parts 20 enclose a process loading area 2 capable of accommodating a target wafer (not labeled in the figure). Each of the positioning parts 20 includes a second supporting structure 201. The free end of the second supporting structure 201 is a positioning part free end 205, and the positioning part free end 205 is close to the edge of the process loading area 2.

[0050] Specifically, during the annealing process, several of the positioning parts 20 not only play a role in supporting the target wafer. To improve the process efficiency and the heat uniformity of the target wafer, the positioning part free end 205 is arranged close to the edge of the process loading area 2, so that as much surface of the front and back of the target wafer as possible can be exposed through several of the positioning parts 20.

[0051] In some embodiments, referring to Figure 3 and Figure 4 , the second supporting structure 201 includes a convex structure 204 to contact the target wafer 3, increase the exposed area of the target wafer 3, and improve the heat uniformity.

[0052] In some specific embodiments, the convex structure 204 contacts the target wafer 3 in a point contact manner.

[0053] In some embodiments, the second supporting structure 201 does not include the convex structure 204. The top surface area of the second supporting structure 201 is as small as possible to increase the exposed area of the target wafer 3 and improve the heat uniformity.

[0054] In the embodiments of the present invention, the composition material of the second supporting structure 201 is not limited. The composition material and surface properties of the second supporting structure 201 are required not to damage the target wafer 3 and avoid generating wafer stress.

[0055] In some embodiments, the second supporting structure 201 is a light-transmitting and heat-conducting supporting structure to improve the heating uniformity of the target wafer 3.

[0056] In some specific embodiments, the second supporting structure 201 is a transparent quartz supporting structure.

[0057] In some embodiments, all the second supporting structures 201 are distributed in a circular array to further ensure the movement stability of the target wafer 3 during the transfer process.

[0058] In some embodiments, the distance between adjacent second supporting structures 201 allows the first supporting structure 101 to pass through, so as to facilitate the transfer of the target wafer 3 to several second supporting structures 201 through several first supporting structures 101.

[0059] In some embodiments, referring to Figure 3 andFigure 4 Each of the positioning portions 20 further includes a second inclined structure 202 that is inclined relative to the second supporting structure 201. The second inclined structure 202 and the second supporting structure 201 intersect to form a second limiting region 203. All the second limiting regions 203 define the range of the process loading region 2 to prevent unnecessary position offset of the target wafer 3. Even if the target wafer 3 is positionally offset and contacts the second inclined structure 202, it can slide down to the top surface of the second supporting structure 201 under the action of its own gravity.

[0060] Specifically, the meaning that all the second limiting regions 203 define the range of the process loading region 2 is that the second limiting regions 203 define the extreme positions that the target wafer 3 can reach when it is displaced along the top surface of the second supporting structure 201 towards the second inclined structure 202.

[0061] Specifically, the material composition of the second inclined structure 202 is not limited as long as it can ensure the supporting strength for the second supporting structure 201.

[0062] In some embodiments, the second inclined structure 202 and the second supporting structure 201 are an integral structure.

[0063] In some specific embodiments, the material composition of the second inclined structure 202 is transparent quartz.

[0064] In the embodiments of the present invention, the semiconductor annealing equipment further includes a movement control unit, and the movement control unit is communicatively connected to 3N of the adjustment portions 10. The movement control unit can drive the 3N first supporting structures 101 to move until the center of the transfer loading region 1 coincides with the center of the process loading region 2, and can drive the 3N first supporting structures 101 away from the process loading region 2.

[0065] Specifically, the movement control unit is arranged in a position that is convenient for operation and does not hinder the movement of all the adjustment portions 10.

[0066] The specific implementation form of the movement control unit is a conventional technical means for those skilled in the art. For example: the movement control unit includes a robotic arm with a plurality of clamping members and a first upper computer electrically connected to the robotic arm. Each clamping member is connected to one of the first supporting structures 101, and the movement of the robotic arm is controlled by the first upper computer.

[0067] In some embodiments, the movement control unit can drive the 3N first supporting structures 101 to move synchronously.

[0068] In some embodiments, the movement control unit can separately control each of the first support structures 101.

[0069] In an embodiment of the present invention, the semiconductor annealing equipment further includes a first heating unit and a second heating unit. The specific installation positions of the first heating unit and the second heating unit are such that uniform heating of the target wafer 3 can be achieved, and the movement of all the adjustment units 10 is not hindered.

[0070] Specifically, the implementation manner of any one of the first heating unit and the second heating unit is a conventional technical means for those skilled in the art. For example, any one of the first heating unit and the second heating unit includes a laser light source and a second host computer electrically connected to the laser light source. The laser light source is respectively arranged on both sides of the process carrying area 2, and the second host computer electrically connected to the laser light source can control the laser incident direction and incident energy of the laser light source.

[0071] In some specific embodiments, referring to Figure 2 and Figure 4 , the first laser light source 301 and the second laser light source 302 are respectively arranged on both sides of the process carrying area 2 to be able to heat the front and back surfaces of the target wafer 3 simultaneously, improving the process efficiency.

[0072] In some embodiments of the present invention, the semiconductor equipment further includes a position information acquisition unit communicatively connected to the movement control unit. The position information acquisition unit is arranged towards at least one side of the process carrying area 2 to acquire and feedback the position information of the target wafer 3 to the movement control unit.

[0073] Specifically, the installation manner of the position information acquisition unit is such that accurate acquisition of the position information of the target wafer 3 can be achieved, and the movement of all the adjustment units 10 is not hindered.

[0074] Specifically, the implementation form of the position information acquisition unit is a conventional technical means for those skilled in the art. For example, the position information acquisition unit includes an image sensor. The first host computer receives the position information fed back by the image sensor and determines whether to control several of the adjustment units 10 to perform position adjustment according to the position information. The number of the image sensors can be flexibly adjusted according to process requirements.

[0075] In some specific embodiments, referring to Figure 1 and Figure 2, the first image sensor 401 and the second image sensor 402 are disposed on one side of the areas where several of the adjustment parts 10 are located, and both face the edge of the target wafer 3. Specifically, the first image sensor 401 and the second image sensor 402 are respectively close to both ends of the second laser light source 302.

[0076] In some embodiments, the first host computer and the second host computer are the same host computer, which can realize the control of all the adjustment parts 10 and the first heating part and the second heating part.

[0077] In some embodiments, each adjustment part 10 is located between two adjacent positioning parts 20 to ensure the stability of the target wafer 3 during the transfer process.

[0078] In some embodiments, the angles formed between any two adjacent adjustment parts 10 and positioning parts 20 are equal.

[0079] Figure 5 This is a schematic diagram of the working states of several adjustment parts and several positioning parts according to some embodiments of the present invention.

[0080] The following combines Figures 1 to 5 to elaborate in detail on the operation method of the semiconductor annealing equipment according to the embodiments of the present invention.

[0081] In some embodiments, the control method of the semiconductor annealing equipment includes:

[0082] S1: Control 3N adjustment parts 10 and 3N positioning parts 20 by the movement control part (not marked in the figure) to enclose an initial positioning area, and place the target wafer 3 in the initial positioning area;

[0083] S2: Judge whether the target wafer 3 needs to be position-adjusted by the movement control part (not marked in the figure);

[0084] S3: Control 3N adjustment parts 10 to move away from 3N positioning parts 20, so that each first supporting structure 101 supports the target wafer 3, and each second supporting structure 201 releases the contact relationship with the target wafer 3;

[0085] S4: Control 3N adjustment parts 10 to perform position adjustment by the movement control part (not marked in the figure) until it is judged by the movement control part (not marked in the figure) that the center of the target wafer 3 coincides with the center of the process loading area 2;

[0086] S5: While controlling the 3N adjustment parts 10 to move towards the 3N positioning parts 20 through the movement control part (not marked in the figure), maintain the coincidence of the center of the target wafer 3 and the center of the process loading area 2 until the target wafer 3 contacts each second supporting structure 201, and each first supporting structure 101 releases the contact relationship with the target wafer 3.

[0087] In the step S1 of some embodiments, several of the positioning parts 20 are Figure 5 shown in a circular array distribution. After adjusting several of the adjustment parts 10 and several of the positioning parts 20 to be both shown in a circular array and distributed around the same area through the movement control part, place the target wafer 3 in the same area. Figure 5 shown in a circular array distribution. After adjusting several of the adjustment parts 10 and several of the positioning parts 20 to be both shown in a circular array and distributed around the same area through the movement control part, place the target wafer 3 in the same area.

[0088] In the step S3 of some embodiments, control the positions of all the adjustment parts 10 to rise synchronously through the movement control part to support the target wafer 3 through the adjustment parts 10.

[0089] In the step S2 of some embodiments, the steps for the movement control part to judge whether position adjustment of the target wafer is needed include: obtaining the position information of the target wafer 3 through the position information acquisition part and sending it to the movement control part, and the movement control part judges whether position adjustment of the target wafer is needed according to the received position information of the target wafer 3.

[0090] When it is judged by the movement control part that the center of the target wafer 3 does not coincide with the center of the process loading area 2, repeat the steps S3 and S4 until it is judged by the movement control part that the center of the target wafer coincides with the center of the process loading area.

[0091] In the step S5 of some embodiments, control all the adjustment parts 10 to descend synchronously through the movement control part until the target wafer 3 contacts the second supporting structures 201 of all the positioning parts 20, and then control all the adjustment parts 10 to move outwards along the radial direction of the target wafer 3 until all the adjustment parts 10 release the contact relationship with the target wafer 3.

[0092] After the step S5 of some embodiments is completed, heat the target wafer 3 through the first heating part and the second heating part to realize heating of the front and back sides of the target wafer 3 and improve heating uniformity and process efficiency.

[0093] Although the embodiments of the present invention have been described in detail above, it will be obvious to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are all within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein can have other embodiments and can be implemented or realized in various ways.

Claims

1. A semiconductor annealing device, characterized in that, Comprising: 3N adjusting parts surrounding a transfer and bearing area capable of accommodating a target wafer. Each adjusting part includes a first supporting structure, and the free end of the first supporting structure is close to the center of the transfer and bearing area; 3N positioning parts surrounding a process bearing area capable of accommodating the target wafer. Each positioning part includes a second supporting structure, and the free end of the second supporting structure is close to the edge of the process bearing area. The distance between adjacent second supporting structures allows the first supporting structure to pass through; A movement control part communicatively connected to the 3N adjusting parts to drive the 3N first supporting structures to move until the center of the transfer and bearing area coincides with the center of the process bearing area, and to drive the 3N first supporting structures away from the process bearing area; N is a positive integer greater than or equal to 1.

2. The semiconductor annealing apparatus according to claim 1, wherein It further includes a first heating part and a second heating part, which are respectively arranged on both sides of the process bearing area to heat the front and back of the target wafer.

3. The semiconductor annealing apparatus according to claim 1, wherein The second supporting structure is a light-transmitting and heat-conducting supporting structure.

4. The semiconductor annealing apparatus according to claim 1, wherein, It further includes a position information acquisition part communicatively connected to the movement control part. The position information acquisition part is arranged on at least one side of the process bearing area to acquire and feedback the position information of the target wafer to the movement control part.

5. The semiconductor annealing apparatus according to claim 1, wherein Each adjusting part further includes a first inclined structure inclined relative to the first supporting structure. The first inclined structure and the first supporting structure intersect to form a first limiting area, and the 3N first limiting areas define the scope of the transfer and bearing area.

6. The semiconductor annealing apparatus according to claim 1, wherein Each positioning part further includes a second inclined structure inclined relative to the second supporting structure. The second inclined structure and the second supporting structure are connected to form a second limiting area, and the 3N second limiting areas define the scope of the process bearing area.

7. The semiconductor annealing apparatus according to claim 1, wherein, The 3N adjusting parts and / or the 3N positioning parts are distributed in a circular array.

8. A control method for a semiconductor annealing device, characterized in that, Including the following steps: S0: Provide the semiconductor annealing equipment according to any one of claims 1 to 7; S1: Control the 3N adjusting parts and the 3N positioning parts by the movement control part to surround an initial positioning area, and place the target wafer in the initial positioning area; S2: Judge whether the position of the target wafer needs to be adjusted by the movement control part; S3: Control the 3N adjusting parts to move away from the 3N positioning parts, so that each first supporting structure supports the target wafer, and each second supporting structure releases the contact relationship with the target wafer; S4: Control the 3N adjusting parts to perform position adjustment by the movement control part until it is judged by the movement control part that the center of the target wafer coincides with the center of the process bearing area; S5: Control the 3N adjusting parts to move towards the 3N positioning parts by the movement control part while maintaining the coincidence of the center of the target wafer and the center of the process bearing area until the target wafer contacts each second supporting structure, and each first supporting structure releases the contact relationship with the target wafer.

9. The control method of the semiconductor annealing equipment according to claim 8, wherein The semiconductor annealing equipment further includes a first heating part and a second heating part respectively arranged towards two sides of the process carrying area. After the step S5 is completed, the target wafer is heated by the first heating part and the second heating part.

10. The control method of the semiconductor annealing equipment according to claim 8, characterized in that, The semiconductor annealing equipment further includes a position information acquisition part communicatively connected to the movement control part. In the step S2, the step of determining whether position adjustment of the target wafer is required by the movement control part includes: acquiring the position information of the target wafer through the position information acquisition part and feeding it back to the movement control part, and the movement control part determines whether position adjustment of the target wafer is required according to the position information of the target wafer fed back by the position information acquisition part.

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