An electrostatic device, a substrate processing system in which the electrostatic device is located, and a replacement cleaning method thereof

Abstract

The present invention discloses an electrostatic device, a substrate processing system in which the electrostatic device is located, and a replacement cleaning method thereof. The substrate processing system comprises a plasma processing device, a transmission chamber, and an electrostatic device. A transmission manipulator is provided in the transmission chamber. The electrostatic device is used to generate adsorption static electricity to adsorb an edge ring in a vacuum reaction chamber in the plasma processing device, and the edge ring is moved into or out of the vacuum reaction chamber by the transmission manipulator, so as to replace the edge ring without opening the vacuum reaction chamber. The present invention has a simple structure and is easy to operate, greatly reducing the maintenance cost of the substrate processing system.

Description

Technical Field

[0001] The present invention relates to the field of manufacturing semiconductor devices, and in particular to an electrostatic device, a substrate processing system in which the electrostatic device is located, and a replacement cleaning method thereof. Background Art

[0002] The plasma processing device has a vacuum reaction chamber and processes semiconductor substrates using the working principle of the vacuum reaction chamber. The working principle of the vacuum reaction chamber is to introduce a reaction gas containing an appropriate etchant or deposition source gas into the vacuum reaction chamber, and then input radio frequency energy into the vacuum reaction chamber to activate the reaction gas to ignite and maintain plasma, so as to etch the material layer on the substrate surface or deposit the material layer on the substrate surface, thereby processing the semiconductor substrate.

[0003] The vacuum reaction chamber of the plasma processing device contains a pedestal, on which an electrostatic chuck is arranged, and the electrostatic chuck is used to adsorb the semiconductor substrate so as to perform plasma processing (etching or deposition) on it. The pedestal and the electrostatic chuck are also surrounded by edge rings such as a focusing ring, a cover ring, and an isolation ring to adjust the temperature, electric field strength, and gas distribution parameters in the vacuum reaction chamber of the plasma processing device, thereby ensuring the uniformity of etching (or deposition) in the center and edge areas of the semiconductor substrate.

[0004] When a plasma processing device performs plasma processing on a semiconductor substrate, it often encounters the problem of large edge ring loss and short service life. Due to the loss of the edge ring, the edge ring's adjustment of parameters such as the temperature, electric field strength, and gas distribution in the edge area will change, resulting in a deterioration in the uniformity of substrate processing in different time periods. In addition, after the edge ring is lost, the gap between the electrostatic chuck and the edge ring becomes larger, causing more corrosive and polluting etching gases, free radicals, plasma and other gases to pass through the enlarged gap between the electrostatic chuck and the edge ring, corroding and attacking the electrostatic chuck side wall, the electrostatic chuck side wall sealing ring, and other components. At the same time, impurities such as polymers and metal particles will be generated to contaminate the semiconductor wafer, thereby affecting the quality of the finished product.

[0005] To solve the above problems, the commonly used method is to regularly replace the edge ring and regularly clean the base and electrostatic chuck in the vacuum reaction chamber. However, the process of replacing the edge ring is relatively complicated and requires opening the vacuum reaction chamber in the plasma processing device, which is time-consuming and labor-intensive.

[0006] The statements herein merely provide background art related to the present invention and do not necessarily constitute prior art. Summary of the invention

[0007] The present invention proposes an electrostatic device, a substrate processing system in which the electrostatic device is located, and a replacement and cleaning method thereof. The electrostatic device capable of generating electrostatic adsorption force is moved into or out of a vacuum reaction chamber of a plasma processing device by a robotic arm. A damaged edge ring can be replaced or particulate impurities on a base and an electrostatic suction cup in the vacuum reaction chamber can be cleaned without opening the vacuum reaction chamber. The operation is simple and the maintenance cost of the substrate processing system can be reduced.

[0008] In order to achieve the above-mentioned purpose, a technical solution of the present invention is to provide an electrostatic device for a plasma processing device, wherein the plasma processing device comprises a vacuum reaction chamber, wherein a lower electrode for supporting a substrate is arranged in the vacuum reaction chamber, and an edge ring is arranged around the lower electrode, wherein the electrostatic device is used to generate adsorption static electricity to adsorb the edge ring to move into or out of the vacuum reaction chamber.

[0009] Optionally, the electrostatic device comprises a high-voltage module capable of generating static electricity and a battery module for providing electrical energy to the high-voltage module.

[0010] Optionally, the electrostatic device further includes a control module that wirelessly communicates with the battery module, and controls the voltage of the high-voltage module by controlling the voltage of the battery module, thereby ultimately controlling the electrostatic force of the electrostatic device.

[0011] Optionally, a clamping portion is provided on the electrostatic device to facilitate the placement and transportation of the electrostatic device.

[0012] Optionally, the clamping portion is a handle-shaped structure arranged on the top of the electrostatic device.

[0013] Optionally, the clamping portion is a groove structure arranged on the periphery of the electrostatic device.

[0014] Optionally, the electrostatic device has a positioning component, which is arranged on the lower surface of the electrostatic device and is used to locate the position of the edge ring.

[0015] Optionally, the positioning component is an annular protrusion structure, or a plurality of fan-shaped annular protrusion structures, or at least one point-shaped protrusion structure.

[0016] Optionally, an inner edge of the positioning member matches an outer edge of the edge ring.

[0017] Optionally, an outer edge of the positioning component matches an inner edge of the edge ring.

[0018] Optionally, at least one groove or hole is provided on the edge ring, and the positioning component matches the groove or hole on the edge ring.

[0019] The second technical solution of the present invention is to provide a substrate processing system, comprising: a plasma processing device, comprising a vacuum reaction chamber for processing a substrate, a lower electrode for supporting the substrate is arranged in the vacuum reaction chamber, and an edge ring is arranged around the lower electrode;

[0020] The electrostatic device is used to generate adsorption static electricity to adsorb the edge ring to move into or out of the vacuum reaction chamber;

[0021] A transfer chamber is provided with a transfer robot inside, and the transfer robot is used to move the electrostatic device into or out of the vacuum reaction chamber.

[0022] Optionally, the system further comprises a front-end module, and the front-end module is used to store the substrate and / or the electrostatic device.

[0023] Optionally, the plasma processing device is a capacitively coupled plasma processing device or an inductively coupled plasma processing device.

[0024] Optionally, a substrate transfer port is provided on the vacuum reaction chamber in the plasma processing device, and the substrate transfer port is used to transfer the substrate and / or the electrostatic device.

[0025] Optionally, the edge ring is a focus ring.

[0026] A third technical solution of the present invention is to provide a method for replacing an edge ring in a vacuum reaction chamber in a plasma processing device in a substrate processing system, the method comprising the following process:

[0027] The electrostatic device is moved into or out of the vacuum reaction chamber in the plasma processing device by the transfer robot; the vacant electrostatic device moved into the vacuum reaction chamber generates adsorption static electricity, adsorbs the edge ring to be replaced, and moves the edge ring to be replaced out of the vacuum reaction chamber; after the electrostatic device adsorbing the new edge ring is moved into the vacuum reaction chamber, the new edge ring is released to complete the replacement of the edge ring.

[0028] Optionally, after the electrostatic device is positioned and contacts the edge ring to be replaced or the new edge ring, adsorption electrostatics are generated to adsorb the edge ring to be replaced or the new edge ring.

[0029] Optionally, the electrostatic device is positioned to contact the edge ring to be replaced or the new edge ring through a positioning component.

[0030] Optionally, by controlling the voltage of the battery module in the electrostatic device, the voltage of the high-voltage module is controlled, and finally the electrostatic force of the electrostatic device is controlled, so that the electrostatic device can adsorb or release the edge ring.

[0031] Optionally, the transport robot transfers the electrostatic device via a clamping portion on the electrostatic device.

[0032] A fourth technical solution of the present invention is to provide a method for cleaning a lower electrode in a vacuum reaction chamber of a plasma processing device in a substrate processing system, the method comprising the following process:

[0033] The electrostatic device is moved into or out of the vacuum reaction chamber in the plasma processing device through the transfer robot; the electrostatic device moved into the vacuum reaction chamber generates static electricity to adsorb the impurity particles on the lower electrode; the electrostatic device adsorbing the impurity particles is transferred out of the vacuum reaction chamber to complete the cleaning of the electrostatic suction cup.

[0034] Optionally, by controlling the voltage of the battery module and thus the voltage of the high-voltage module, the electrostatic force of the electrostatic device is finally controlled, so that the electrostatic device can adsorb or release the impurity particles on the lower electrode.

[0035] Compared with the prior art, the present invention has the following beneficial effects:

[0036] The electrostatic device of the present invention generates electrostatic adsorption to adsorb the edge ring in the vacuum reaction chamber of the plasma processing device, and moves the edge ring into or out of the vacuum reaction chamber through the substrate transmission port on the vacuum reaction chamber, so that the edge ring can be replaced without opening the vacuum reaction chamber, which is simple to operate and saves time and effort. In addition, the present invention also provides a positioning component at the bottom of the electrostatic device to achieve positioning between the edge ring and the electrostatic device, ensuring that the edge ring is in the same position in the vacuum reaction chamber before and after replacement. Moreover, the electrostatic device of the present invention can also clean the impurity particles on the lower electrode in the vacuum reaction chamber of the plasma processing device, greatly reducing the maintenance cost of the substrate processing system. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 A schematic structural diagram of a substrate processing system provided by the present invention;

[0038] Figure 2 It is a schematic diagram of the partial structure of the vacuum reaction chamber in the plasma processing device of the present invention;

[0039] Figure 3 A schematic diagram of a first structure of a clamping portion of an electrostatic device provided by the present invention;

[0040] Figure 4 A second structural schematic diagram of the clamping portion of the electrostatic device provided by the present invention;

[0041] Figure 5 A cross-sectional view of the overall structure when the electrostatic device provided by the present invention acts on a plasma processing device;

[0042] Figure 6 The first embodiment of the present invention provides Figure 5 The enlarged view of point A in the middle;

[0043] Figure 7 The second embodiment of the present invention provides Figure 5 The enlarged view of point A in the middle;

[0044] Figure 8 The third embodiment of the present invention provides Figure 5 Enlarged view of point A in the middle. DETAILED DESCRIPTION

[0045] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0046] like Figure 1 As shown, the substrate processing system of the present invention includes: at least one plasma processing device 1, a transmission chamber 2 and a front-end module 3, wherein the plasma processing device 1 is used to perform plasma processing on a substrate, the front-end module 3 is used to store the substrate, the transmission chamber 2 is arranged between the plasma processing device 1 and the front-end module 3, and a transmission robot 201 is arranged in the transmission chamber 2 for moving the substrate into or out of the plasma processing device 1.

[0047] like Figure 2 As shown, the plasma processing device 1 includes a vacuum reaction chamber 101 for processing a substrate, a substrate transmission port 105 is arranged on the side wall of the vacuum reaction chamber 101, and a transmission robot 201 inside the transmission chamber 2 transmits a substrate (not shown in the figure) through the substrate transmission port 105; a base 103 for supporting an electrostatic chuck 102 is arranged in the vacuum reaction chamber 101, and the electrostatic chuck 102 is used to place a substrate, and further, the electrostatic chuck 102 and the base 103 are collectively referred to as a lower electrode; an edge ring 104 is arranged around the lower electrode to adjust parameters such as electric field strength, temperature and gas distribution in the vacuum reaction chamber of the plasma processing device, so as to ensure the uniformity of plasma processing rate in the central area and edge area of ​​the substrate.

[0048] The substrate processing system further includes an electrostatic device 4. When the plasma processing device 1 is working, the electrostatic device 4 is located outside the vacuum reaction chamber 101. The electrostatic device can be stored in the front-end module 3 or in other storage modules. After the edge ring works in the vacuum reaction chamber for a period of time, it is bombarded and corroded by the plasma, and the shape and thickness of the edge ring will change, thereby affecting the uniformity of the substrates processed at different times. Therefore, when it is detected that the shape or thickness of the edge ring has changed to a certain extent, it is necessary to use the electrostatic device to replace the edge ring. Specifically, after the process of the plasma processing device 1 is completed, the electrostatic device 4 is moved into the vacuum reaction chamber 101 through the substrate transmission port 105 by the transmission manipulator 201 inside the transmission chamber 2, and the electrostatic device 4 generates adsorption static electricity to adsorb the edge ring 104 of the plasma processing device 1, thereby replacing the edge ring 104 without opening the vacuum reaction chamber. At the same time, the electrostatic device also generates adsorption static electricity to adsorb the impurity particles on the lower electrode, thereby cleaning the impurity particles on the surface of the lower electrode.

[0049] Furthermore, the electrostatic device 4 has a high-voltage module that can generate static electricity and a battery module that provides power to the high-voltage module; the electrostatic device 4 is wirelessly connected to a control module, and the control module controls the operation of the high-voltage module or the size of the adsorbed static electricity generated by the high-voltage module by controlling the power on and off of the battery module or the output voltage. By controlling the size of the electrostatic force generated by the electrostatic device 4, the function switching of the electrostatic device 4 in different application scenarios can be achieved.

[0050] The electrostatic device is provided with a clamping portion 401 to facilitate the transfer robot 201 to take and place the electrostatic device 4 and move it into or out of the vacuum reaction chamber 101. Further, the clamping portion is preferably as follows Figure 3 The groove structure shown disposed on the periphery of the electrostatic device 4 may also be other structures that facilitate the transfer robot 201 to pick up and transfer the electrostatic device 4, such as: Figure 4 The handle-like structure is shown as being arranged on the top of the electrostatic device 4. Specifically, when the clamping portion 401 adopts a groove structure, the transmission robot 201 inserts into the groove structure to pick up and transfer the electrostatic device 4; when the clamping portion 401 adopts a handle-like structure, the transmission robot 201 picks up and transfers the electrostatic device 4 by clamping the handle-like structure.

[0051] A positioning component is also provided on the lower surface of the electrostatic device, so that the electrostatic device 4 can locate the position of the edge ring 104 and ensure that the position of the edge ring in the vacuum reaction chamber 101 in the plasma processing device 1 is the same before and after the edge ring is replaced.

[0052] Embodiment 1

[0053] like Figure 1 , Figure 2 and Figure 3 As shown, the substrate processing system of the present invention comprises: at least one plasma processing device 1, a transmission chamber 2, a front-end module 3 and an electrostatic device 4; the transmission chamber 2 is arranged between the plasma processing device 1 and the front-end module 3;

[0054] The plasma processing device 1 comprises a vacuum reaction chamber 101 for processing a substrate, a substrate transmission port 105 is arranged on the side wall of the reaction chamber for transmitting a substrate or the electrostatic device 4; an electrostatic chuck 102 for supporting a substrate is arranged in the vacuum reaction chamber 101, and the electrostatic chuck 102 is placed on a base 103. Further, the electrostatic chuck 102 and the base 103 are collectively referred to as a lower electrode; an edge ring 104 is arranged around the lower electrode. Preferably, the edge ring 104 is a focusing ring 106.

[0055] like Figure 3 As shown, in this embodiment, the electrostatic device 4 is circular, and its outer diameter is larger than the inner diameter of the edge ring 104. Optionally, the outer diameter of the electrostatic device is larger than the outer diameter of the edge ring 104. The electrostatic device 4 has a high-voltage module that can generate static electricity and a battery module that provides power to the high-voltage module; the electrostatic device 4 is wirelessly connected to a control module, and the control module controls the operation of the high-voltage module or the size of the adsorption static electricity generated by the high-voltage module by controlling the power on and off of the battery module or the output voltage. By controlling the size of the electrostatic force generated by the electrostatic device 4, the function switching of the electrostatic device 4 in different application scenarios can be achieved.

[0056] The electrostatic device 4 is provided with a clamping portion 401, which facilitates the transfer robot 201 to take and place the electrostatic device and move it into or out of the vacuum reaction chamber. In this embodiment, the clamping portion adopts a groove structure arranged on the periphery of the electrostatic device, and the transfer robot 201 can take and place and transfer the electrostatic device 4 by inserting into the groove structure of the electrostatic device 4.

[0057] like Figure 5 and Figure 6 As shown, a positioning component 402 is also provided on the lower surface of the electrostatic device 4, so as to facilitate the electrostatic device 4 to position the edge ring 104, and ensure that the position of the edge ring 104 in the vacuum reaction chamber 101 remains unchanged before and after the replacement. In this embodiment, the positioning component 402 is a plurality of fan-shaped protrusion structures, and the inner edge of the positioning component 402 matches the outer edge of the edge ring 104. Figure 6 In this embodiment Figure 5The local enlarged view of point A in the middle is as follows: Figure 6 As shown, when the electrostatic device 4 absorbs the edge ring 104 , the inner edge of the positioning component 402 of the electrostatic device 4 clamps the outer edge of the edge ring 104 , and the electrostatic device 4 is positioned to contact the edge ring 104 to achieve alignment between the electrostatic device 4 and the edge ring 104 .

[0058] The electrostatic device 4 proposed in the present invention can be used to replace the edge ring 104 in the plasma processing device in the substrate processing system in which it is located. The edge ring 104 replacement method in the plasma processing device 1 in the substrate processing system in this embodiment includes the following steps:

[0059] S1. An empty electrostatic device is moved into a vacuum reaction chamber to generate electrostatic adsorption to adsorb the edge ring to be replaced, and then the edge ring to be replaced is moved out of the vacuum reaction chamber by a transfer robot.

[0060] Specifically, the transfer robot 201 in the transfer chamber 2 is inserted into the clamping part 401 with a groove structure of an empty electrostatic device 4 to take and place the electrostatic device 4, and transfers the electrostatic device 4 to the vacuum reaction chamber 101 in the plasma processing device 1 through the substrate transfer port 105 on the vacuum reaction chamber 101, and the inner edge of the positioning component 402 of the electrostatic device 4 clamps the outer edge of the edge ring to be replaced in the vacuum reaction chamber 101 in the plasma processing device 1, so that the electrostatic device 4 is positioned to contact the edge ring to be replaced.

[0061] The electrostatic device 4 controls the conduction between the battery module and the high-voltage module of the electrostatic device 4 to control the electrostatic device 4 to generate adsorption static electricity to adsorb the edge ring to be replaced. The electrostatic device 4 controls the output voltage of the battery module of the electrostatic device 4 to control the size of the adsorption static electricity generated by the electrostatic device 4, and the adsorption static electricity generated by the electrostatic device 4 is sufficient to overcome the gravity of the edge ring to be replaced.

[0062] The transfer robot 201 transfers the electrostatic device 4 adsorbing the edge ring to be replaced to the front-end module 3 through the substrate transfer port 105 of the vacuum reaction chamber 101 to realize the recovery of the edge ring to be replaced.

[0063] The electrostatic device 4 controls the battery module of the electrostatic device 4 to disconnect from the high-voltage module or controls to reduce the output voltage of the battery module of the electrostatic device 4, thereby controlling the electrostatic device to release the edge ring to be replaced, thereby achieving the removal of the edge ring to be replaced without opening the vacuum reaction chamber.

[0064] S2. The electrostatic device absorbs the new edge ring and moves it into the vacuum reaction chamber, and then releases the new edge ring to complete the replacement of the edge ring.

[0065] Specifically, the inner edge of the positioning component 402 of the electrostatic device 4 clamps the outer edge of the new edge ring to be positioned and contact the new edge ring, and the electrostatic device 4 then generates adsorption static electricity to adsorb the new edge ring.

[0066] The transfer robot 201 transfers the electrostatic device 4 with a new edge ring adsorbed thereon from the front-end module 3 to the vacuum reaction chamber 101, and ensures that the position where the electrostatic device 4 with a new edge ring adsorbed thereon is transferred by the transfer robot 201 into the vacuum reaction chamber 101 is the same as the position where the transfer robot 201 previously transferred an empty electrostatic device 4 into the vacuum reaction chamber 101; the edge ring may also be provided with a component that is positioned relative to a base or a component that supports the edge ring; thereby ensuring that the position where the new edge ring is positioned and placed in the vacuum reaction chamber 101 is the same as the position of the edge ring to be replaced previously in the vacuum reaction chamber 101.

[0067] The electrostatic device 4 controls the battery module of the electrostatic device 4 to be disconnected from the high-voltage module or controls the output voltage of the battery module of the electrostatic device 4 to be reduced, thereby controlling the electrostatic device to release a new edge ring and completing the replacement of the edge ring.

[0068] Finally, the transfer robot 201 transfers the idle electrostatic device 4 from the vacuum reaction chamber 101 in the plasma processing device 1 to the front-end module 3 .

[0069] The electrostatic device 4 proposed in the present invention can also be used to clean the impurity particles on the lower electrode of the plasma processing device in the substrate processing system. The method for cleaning the impurity particles on the lower electrode of the plasma processing device 1 in the substrate processing system in this embodiment includes the following steps:

[0070] The transfer robot 201 in the transfer chamber 2 is inserted into the clamping portion 401 of the electrostatic device 4 in a groove structure to take and place the electrostatic device 4, and transfers the electrostatic device 4 to the vacuum reaction chamber 101 in the plasma processing device 1 through the substrate transfer port 105 on the vacuum reaction chamber 101, and the electrostatic device 4 contacts the lower electrode in the vacuum reaction chamber 101.

[0071] The electrostatic device 4 generates adsorption static electricity by controlling the conduction between the battery module and the high-voltage module of the electrostatic device 4, and generates adsorption electrostatic force that is capable of adsorbing impurity particles but insufficient to overcome the gravity of the edge ring 104 by controlling the output voltage of the battery module in the electrostatic device 4. In this step, the electrostatic device 4 only adsorbs impurity particles on the lower electrode without taking or placing the edge ring. In another embodiment, the electrostatic device can complete the adsorption of impurity particles while taking or placing the edge ring, thereby cleaning the lower electrode.

[0072] The transfer robot 201 transfers the electrostatic device 4 with adsorbed impurity particles to the front-end module 3 through the substrate transfer port 105 of the vacuum reaction chamber 101;

[0073] The electrostatic device 4 controls the battery module of the electrostatic device 4 to be disconnected from the high-voltage module to control the electrostatic device 4 to release the impurity particles, thereby completing the cleaning of the lower electrode in the vacuum reaction chamber 101 during the plasma treatment transfer.

[0074] The electrostatic device of the present invention generates an electrostatic adsorption to adsorb an edge ring in a vacuum reaction chamber in a plasma processing device, and moves the edge ring into or out of the vacuum reaction chamber through a substrate transmission port on the vacuum reaction chamber, thereby replacing the edge ring without opening the vacuum reaction chamber, which is simple to operate, time-saving and labor-saving. Moreover, the electrostatic device of the present invention can also clean impurity particles on the lower electrode in the vacuum reaction chamber in the plasma processing device, greatly reducing the maintenance cost of the substrate processing system.

[0075] Embodiment 2

[0076] In this embodiment, Figure 1 , Figure 2 , Figure 3 , Figure 5 and Figure 6 On the basis of the above-described first embodiment, the positioning component 402 of the electrostatic device 4 in the substrate processing system in the first embodiment is adjusted.

[0077] like Figure 5 and Figure 7 As shown, in this embodiment, the positioning component 402 of the electrostatic device 4 is an annular protruding structure, and the outer edge of the positioning component 402 matches the inner edge of the edge ring 104 . Figure 7 In this embodiment Figure 5 The local enlarged view of point A in the middle is as follows: Figure 7As shown, when the electrostatic device 4 absorbs the edge ring 104 , the outer edge of the positioning component 402 of the electrostatic device 4 clamps the inner edge of the edge ring 104 , and the electrostatic device 4 is positioned to contact the edge ring 104 to achieve alignment between the electrostatic device 4 and the edge ring 104 .

[0078] In this embodiment, the method for replacing the edge ring 106 in the plasma processing device 1 in the substrate processing system and the method for cleaning impurity particles on the lower electrode in the plasma processing device 1 are the same as those in the first embodiment and will not be described in detail in this embodiment.

[0079] The electrostatic device of the present invention generates an electrostatic adsorption to adsorb an edge ring in a vacuum reaction chamber in a plasma processing device, and moves the edge ring into or out of the vacuum reaction chamber through a substrate transmission port on the vacuum reaction chamber, thereby replacing the edge ring without opening the vacuum reaction chamber, which is simple to operate, time-saving and labor-saving. Moreover, the electrostatic device of the present invention can also clean impurity particles on the lower electrode in the vacuum reaction chamber in the plasma processing device, greatly reducing the maintenance cost of the substrate processing system.

[0080] Embodiment 3

[0081] In this embodiment, Figure 1 , Figure 2 , Figure 3 , Figure 5 and Figure 6 Based on the embodiment 1, the positioning component 402 of the electrostatic device 4 in the substrate processing system in the embodiment 1 is adjusted. In addition, at least one groove or positioning hole is provided in the top of the edge ring 104 in the vacuum reaction chamber 101 of the plasma processing device 1 in this embodiment.

[0082] like Figure 5 and Figure 8 As shown, in this embodiment, the positioning component 402 of the electrostatic device 4 is at least one dot-shaped protruding structure, and the positioning component 402 matches the groove or positioning hole on the edge ring 104 . Figure 8 In this embodiment Figure 5 The local enlarged view of point A in the middle is as follows: Figure 8 As shown, when the electrostatic device 4 absorbs the edge ring 104 , the positioning component 402 of the electrostatic device 4 is inserted into the groove or positioning hole on the edge ring 104 , and the electrostatic device 4 is positioned to contact the edge ring 104 to achieve alignment between the electrostatic device 4 and the edge ring 104 .

[0083] In this embodiment, the method for replacing the edge ring 106 in the plasma processing device 1 in the substrate processing system and the method for cleaning impurity particles on the lower electrode in the plasma processing device 1 are the same as those in the first embodiment and will not be described in detail in this embodiment.

[0084] The electrostatic device of the present invention generates an electrostatic adsorption to adsorb an edge ring in a vacuum reaction chamber in a plasma processing device, and moves the edge ring into or out of the vacuum reaction chamber through a substrate transmission port on the vacuum reaction chamber, thereby replacing the edge ring without opening the vacuum reaction chamber, which is simple to operate, time-saving and labor-saving. Moreover, the electrostatic device of the present invention can also clean impurity particles on the lower electrode in the vacuum reaction chamber in the plasma processing device, greatly reducing the maintenance cost of the substrate processing system.

[0085] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. An electrostatic device for a plasma processing device, the plasma processing device comprising a vacuum reaction chamber, a lower electrode for supporting a substrate is arranged in the vacuum reaction chamber, an edge ring is arranged around the lower electrode, characterized in that: The electrostatic device is used to generate adsorption static electricity to adsorb the edge ring to move into or out of the vacuum reaction chamber; The electrostatic device has a positioning component, which is arranged on the lower surface of the electrostatic device and is used to locate the position of the edge ring; A clamping portion is provided on the electrostatic device to facilitate the placement and transportation of the electrostatic device.

2. The electrostatic device for a plasma processing device according to claim 1, characterized in that: The electrostatic device comprises a high-voltage module capable of generating static electricity and a battery module for providing electric energy to the high-voltage module.

3. The electrostatic device for a plasma processing device according to claim 1, characterized in that: The electrostatic device also includes a control module that wirelessly communicates with the battery module, and controls the voltage of the high-voltage module by controlling the voltage of the battery module, thereby ultimately controlling the electrostatic force of the electrostatic device.

4. The electrostatic device for a plasma processing device according to claim 1, characterized in that: The clamping portion is a handle-shaped structure arranged on the top of the electrostatic device.

5. The electrostatic device for a plasma processing device according to claim 1, characterized in that: The clamping portion is a groove structure arranged on the periphery of the electrostatic device.

6. The electrostatic device for a plasma processing device according to claim 1, characterized in that: The positioning component is an annular protrusion structure, or a plurality of fan-shaped annular protrusion structures, or at least one dot-shaped protrusion structure.

7. The electrostatic device for a plasma processing device according to claim 6, characterized in that: The inner edge of the positioning member matches the outer edge of the edge ring.

8. The electrostatic device for a plasma processing device according to claim 6, characterized in that: The outer edge of the positioning member matches the inner edge of the edge ring.

9. The electrostatic device for a plasma processing device according to claim 6, characterized in that: The edge ring is provided with at least one groove or hole, and the positioning component matches the groove or hole on the edge ring.

10. A substrate processing system, characterized in that: Include: The plasma processing device comprises a vacuum reaction chamber for processing a substrate, wherein a lower electrode for supporting the substrate is arranged in the vacuum reaction chamber, and an edge ring is arranged around the lower electrode; The electrostatic device according to any one of claims 1 to 9, wherein the electrostatic device is used to generate adsorption static electricity to adsorb the edge ring to move into or out of the vacuum reaction chamber; A transfer chamber is provided with a transfer robot inside, and the transfer robot is used to move the electrostatic device into or out of the vacuum reaction chamber.

11. The substrate processing system according to claim 10, wherein: The system further comprises a front-end module, and the front-end module is used for storing the substrate and / or the electrostatic device.

12. The substrate processing system according to claim 10, wherein: A substrate transfer port is arranged on the vacuum reaction chamber in the plasma processing device, and the substrate transfer port is used to transfer the substrate and / or the electrostatic device.

13. The substrate processing system according to claim 10, wherein: The edge ring is a focus ring.

14. A method for replacing an edge ring in a plasma processing device in a substrate processing system according to any one of claims 10 to 13, characterized in that: The electrostatic device is moved into or out of the vacuum reaction chamber in the plasma processing device by the transfer robot; the vacant electrostatic device moved into the vacuum reaction chamber generates adsorption static electricity, adsorbs the edge ring to be replaced, and moves the edge ring to be replaced out of the vacuum reaction chamber; after the electrostatic device adsorbing the new edge ring is moved into the vacuum reaction chamber, the new edge ring is released to complete the replacement of the edge ring.

15. The edge ring replacement method according to claim 14, wherein: After the electrostatic device is positioned and contacts the edge ring to be replaced or the new edge ring, it generates adsorption electrostatics to adsorb the edge ring to be replaced or the new edge ring.

16. The edge ring replacement method according to claim 15, characterized in that: The electrostatic device is positioned to contact the edge ring through the positioning component.

17. The edge ring replacement method of claim 14, wherein: The transport robot transports the electrostatic device through a clamping portion on the electrostatic device.

18. The edge ring replacement method of claim 14, wherein: By controlling the voltage of the battery module in the electrostatic device, the voltage of the high-voltage module is controlled, and finally the adsorption static electricity generated by the electrostatic device is controlled, so that the electrostatic device can adsorb or release the edge ring.

19. A method for cleaning a lower electrode in a plasma processing device in a substrate processing system according to any one of claims 10 to 13, characterized in that: The electrostatic device is moved into or out of the vacuum reaction chamber in the plasma processing device through the transfer robot; the electrostatic device moved into the vacuum reaction chamber generates static electricity to adsorb the impurity particles on the lower electrode, and the electrostatic device adsorbing the impurity particles is transferred out of the vacuum reaction chamber to complete the cleaning of the electrostatic suction cup.

20. The lower electrode cleaning method according to claim 19, characterized in that: By controlling the voltage of the battery module, the voltage of the high-voltage module is controlled, and finally the adsorption static electricity generated by the electrostatic device is controlled, so that the electrostatic device can adsorb or release the impurity particles on the lower electrode.

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