Substrate processing apparatus, method for manufacturing semiconductor device, and computer-readable recording medium

Abstract

The present invention provides a substrate processing device, a method for manufacturing a semiconductor device, and a computer-readable recording medium, which is a technology for inhibiting the gas in the processing chamber from flowing into the transfer chamber and the gas in the transfer chamber from flowing into the processing chamber during the substrate processing process. The device comprises: a substrate loading portion having a substrate loading surface for loading a substrate; a processing container forming a processing chamber for storing the substrate loading portion and processing the substrate loaded on the substrate loading surface; a gas supply portion for supplying processing gas to the processing chamber; a first wall portion arranged on the outer peripheral side of the substrate loading portion; a second wall portion arranged at a position further to the outer peripheral side of the substrate loading portion than the first wall portion; an exhaust flow path formed between the first wall portion and the second wall portion for exhausting the gas in the processing chamber; and a shielding plate configured to be arranged below the substrate loading portion and extend at least to the lower side of the lower end of the second wall portion.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus, a method for manufacturing a semiconductor device, and a computer-readable recording medium. Background Art

[0002] As one form of a substrate processing apparatus used in a manufacturing process of a semiconductor device, there is an apparatus including, for example, a processing chamber for processing a substrate and a transfer chamber adjacent to the processing chamber (see, for example, Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2017-183393 Summary of the invention

[0006] In the substrate processing apparatus having such a structure, in the process of processing the substrate, there are cases where the gas in the processing chamber flows into the transfer chamber, and the gas in the transfer chamber flows into the processing chamber.

[0007] An object of the present invention is to suppress the flow of gas in a processing chamber into a transfer chamber and the flow of gas in a transfer chamber into a processing chamber in a substrate processing step.

[0008] According to one embodiment, a technique is provided, comprising:

[0009] a substrate mounting portion having a substrate mounting surface on which a substrate is mounted;

[0010] a processing container forming a processing chamber for accommodating the substrate mounting portion and processing the substrate mounted on the substrate mounting surface;

[0011] A gas supply unit, which supplies a processing gas to the processing chamber;

[0012] a first wall portion disposed on an outer peripheral side of the substrate mounting portion;

[0013] a second wall portion disposed at a position further outward from the substrate mounting portion than the first wall portion;

[0014] an exhaust flow path formed between the first wall portion and the second wall portion and used to exhaust the gas in the processing chamber; and

[0015] The shielding plate is disposed below the substrate placement portion and is configured to extend at least to a lower side of a lower end of the second wall portion.

[0016] Effects of the Invention

[0017] According to the present invention, it is possible to suppress the gas in the processing chamber from flowing into the transfer chamber and the gas in the transfer chamber from flowing into the processing chamber in the substrate processing step. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is a schematic cross-sectional view of a main part of a substrate processing apparatus according to one embodiment of the present invention.

[0019] Figure 2 This is a schematic cross-sectional view of a main part of a substrate processing apparatus according to one embodiment of the present invention.

[0020] Figure 3 It is a schematic plan view of the main parts of a substrate processing apparatus according to one embodiment of the present invention.

[0021] Figure 4 It is a schematic plan view of the main parts of a substrate processing apparatus according to one embodiment of the present invention.

[0022] Figure 5 It is a schematic plan view of the main parts of a substrate processing apparatus according to one embodiment of the present invention.

[0023] Figure 6 This is a schematic cross-sectional view of a main part of a substrate processing apparatus according to one embodiment of the present invention.

[0024] Figure 7 It is a diagram for explaining a gas supply unit in a substrate processing apparatus according to one embodiment of the present invention.

[0025] Figure 8 This is a schematic configuration diagram of a controller in a substrate processing apparatus according to one embodiment of the present invention, and is a diagram showing a control system of the controller in the form of a block diagram.

[0026] Fig. 9 middle, Fig. 9 (a) is a diagram showing the airflow flowing out from the processing chamber to the exhaust passage and the airflow flowing out from the transfer chamber to the exhaust passage. Fig. 9 (b) is a diagram showing a state where the shielding plate is in surface contact with the second wall portion. Fig. 9 (c) is a diagram showing a state where the shielding plate and the second wall portion are in point contact. Fig. 9 (d) is a diagram showing a state where the shielding plate and the second wall portion are opened.

[0027] Fig.10 It is a schematic cross-sectional view of a main part of a substrate processing apparatus according to another embodiment of the present invention.

[0028] Description of Reference Numerals

[0029] 100: wafer (substrate), 200: substrate processing device, 201: processing chamber, 202: processing container, 210: substrate mounting portion, 211, 211a, 211b, 211c, 211d: substrate mounting surface, 222: arm, 250, 250a, 250b, 250c, 250d: shielding plate, R, Ra, Rb, Rc, Rd: exhaust flow path, 300: first gas supply portion, 320: second gas supply portion, 330: third gas supply portion, 340: fourth gas supply portion DETAILED DESCRIPTION

[0030] <One embodiment of the present invention>

[0031] One embodiment of the present invention is described below.

[0032] (1) Structure of substrate processing apparatus

[0033] First, use Figure 1 , Figure 3 to Figure 8 , explaining the structure of the substrate processing device 200 of the present embodiment. The substrate processing device 200 of the present embodiment is a device used in the manufacturing process of semiconductor devices, and is configured to process multiple substrates as processing objects. As the substrate to be processed, for example, a semiconductor chip substrate (hereinafter referred to as a "chip") embedded with a semiconductor device (semiconductor device) can be listed. In addition, the drawings used in the following description are all schematic drawings, and the dimensional relationship of the elements shown in the drawings, the proportion of the elements, etc. may not be consistent with the reality. In addition, the dimensional relationship of the elements, the proportion of the elements, etc. may not be consistent between multiple drawings.

[0034] (Processing container)

[0035] like Figure 1 As shown, the substrate processing apparatus 200 includes a processing container 202. The processing container 202 is, for example, a closed container having a square cross section and being flat. The processing container 202 is made of a metal material such as aluminum (Al) or stainless steel (SUS). In the processing container 202, there are formed a processing chamber 201 for processing a wafer 100 such as a silicon wafer, and a transfer chamber 203 for the wafer 100 to pass through when the wafer 100 is transferred to the processing chamber 201.

[0036] The upper surface of the processing container 202 is provided with, for example, four circular openings (not shown), and lid structures 290 (290a, 290b, 290c, and 290d) are installed to penetrate through the openings. Figure 5 As shown, the cover-like structures 290a to 290d are arranged in a circumferential shape with a common exhaust pipe 272 described later as the center. Figure 5This is a diagram of the substrate processing apparatus 200 as seen from above. Figure 5 The longitudinal section view at C-C' of Figure 1 quite.

[0037] like Figure 1 As shown, the cover structure 290 has: a cover portion 295 (295a, 295b, 295c, 295d) fitted with the opening; a second wall portion 292 (292a, 292b, 292c, 292d) extending downward from the edge of the cover portion 295 and constituting the outer peripheral wall of the cover structure 290; and a first wall portion 291 (291a, 291b, 291c, 291d) arranged on the inner side of the second wall portion 292 and constituting the inner peripheral wall of the cover structure 290. The second wall portion 292 is configured to extend further downward than the first wall portion 291.

[0038] Between the first wall 291a-291d and the second wall 292a-292d, exhaust flow paths R (Ra, Rb, Rc, Rd) are formed in the entire circumference. The processing chamber 201 (201a, 201b, 201c, 201d) is formed by the space formed by the first wall 291 of the cover structure 290 and the cover 295.

[0039] The transfer chambers 203 (203a, 203b, 203c, 203d) are provided below the processing chamber 201 in a manner corresponding to the respective processing chambers 201a, 201b, 201c, 201d. For example, the transfer chamber 203a corresponds to the processing chamber 201a, the transfer chamber 203b corresponds to the processing chamber 201b, the transfer chamber 203c corresponds to the processing chamber 201c, and the transfer chamber 203d corresponds to the processing chamber 201d.

[0040] A substrate loading port 205A adjacent to the gate valve 208A and a substrate unloading port 205B adjacent to the gate valve 208B are provided on the lower side of the processing container 202. The wafer 100 is moved between the transfer chamber (not shown) and the transfer chamber 203 through the substrate loading port 205A and the substrate unloading port 205B (see FIG. Figure 3 ). Figure 3 This is a diagram of the vicinity of a first exhaust pipe 273 described later as viewed from above, and for the sake of convenience, the cover-like structure 290 and a rotating arm (hereinafter sometimes simply referred to as “arm”) 222 described later are omitted. Figure 3 The longitudinal section view at A-A' is Figure 1 At the bottom of the processing container 202, a plurality of lift pins 207 (207a, 207b, 207c, 207d) are provided at positions corresponding to the transfer chambers 203a to 203d.

[0041] The processing chambers 201a to 201d are provided with substrate mounting portions 210 (210a, 210b, 210c, and 210d) on which the wafer 100 is mounted, respectively (see Figure 1 , Figure 4 ). Figure 4 This is a diagram of the vicinity of an arm 222 described later as viewed from above, and for the sake of convenience, the cover-like structure 290 and the first exhaust portion 270 described later are omitted. Figure 4 The longitudinal section view at B-B' Figure 1 quite.

[0042] The substrate mounting parts 210a to 210d respectively have substrate mounting surfaces 211 (211a, 211b, 211c, 211d) for mounting the wafer 100, and heaters 213 (213a, 213b, 213c, 213d) as heating sources. In the substrate mounting part 210, through holes 214 for the lift pins 207 to penetrate are respectively provided at positions corresponding to the lift pins 207.

[0043] The substrate mounting portion 210 is supported by a shaft 217 (217a, 217b, 217c, 217d). The shaft 217 passes through the bottom of the processing container 202 and is sealed and connected to the outside of the processing container 202. In addition, by operating the substrate mounting portion lifting portion 218 to raise and lower the shaft 217 and the substrate mounting portion 210, the substrate mounting portion 210 can raise and lower the wafer 100 mounted on the substrate mounting surface 211. In addition, the shaft 217 is insulated from the processing container 202. In addition, the lower end of the shaft 217 is covered by a bellows 219, thereby maintaining the processing chamber 201 in an airtight manner. The operation of the substrate mounting portion 210 will be described later.

[0044] When the wafer 100 is transported, the substrate mounting portion 210 is lowered to a position where the substrate mounting surface 211 faces the substrate carrying inlet 205A and the substrate carrying outlet 205B (see FIG. Figure 6 ), when processing the wafer 100, as Figure 1 As shown, the wafer 100 is lifted up until it reaches the processing position in the processing chamber 201. The robot 255 is disposed outside the processing container 202 and has a function of transferring the wafer 100 to and from the processing container 202.

[0045] Shielding plates 250 (250a, 250b, 250c, 250d) formed of disc-shaped plate members corresponding to the second wall portions 292a to 292d are arranged below the substrate mounting portion 210 so as to extend to the lower side of the lower ends of the second wall portions 292a to 292d, respectively. The distance between the shielding plates 250a to 250d and the lower ends of the first wall portions 291a to 291d is longer than the distance between the shielding plates 250a to 250d and the lower ends of the second wall portions 292a to 292d.

[0046] The shielding plate 250 is supported by a shaft 257 (257a, 257b, 257c, 257d). The shaft 257 passes through the bottom of the processing container 202 and is connected to the shielding plate lifting part 258 outside the processing container 202. The shaft 257 is insulated from the processing container 202. In addition, the lower end of the shafts 257a to 257d is covered by a bellows 259 (259a, 259b, 259c, 259d), thereby maintaining the inside of the processing chamber 201 airtight. The operation of the shielding plate 250 will be described later.

[0047] Furthermore, the substrate placement portion lift 218 and the shield plate lift 258 are configured to be independently liftable.

[0048] In the processing chamber 201 , shower heads 234 ( 234 a , 234 b , 234 c , and 234 d ) serving as gas dispersing mechanisms are provided at positions facing the substrate mounting surfaces 211 a to 211 d .

[0049] like Figure 5 As shown, the cover structures 290a to 290d are provided with gas introduction holes 231 (231a, 231b, 231c, 231d) respectively. The gas introduction holes 231a to 231d are connected to the common gas supply pipe 301 described later. Figure 5 The longitudinal section view at line A-A' is Figure 1 quite.

[0050] like Figure 4 As shown, the substrate mounting parts 210a to 210d are arranged in a circumferential shape with the rotating shaft 221 as the center. An arm 222 is mounted on the rotating shaft 221, and the arm 222 supports the lower surface of the wafer 100 mounted on the substrate mounting surface (for example, the substrate mounting surface 211a) and transports the wafer 100 to the adjacent substrate mounting surface (for example, the substrate mounting surface 211b). In this embodiment, four arms 222 are mounted on the rotating shaft 221.

[0051] like Figure 4 As shown in FIG. 1 , the arm 222 is formed as a straight rod member having a plurality of continuous corners in a plan view, and is configured to support the wafer 100 by portions near the plurality of corners.

[0052] The rotating shaft 221 passes through the bottom of the processing container 202 and is connected to an arm lifting and rotating unit (hereinafter referred to as "arm lifting unit") 223 outside the processing container 202. The rotating shaft 221 is insulated from the processing container 202. In addition, the lower end of the rotating shaft 221 is covered by a bellows 229, thereby maintaining the processing chamber 201 airtight. The arm lifting and rotating unit 223 lifts and rotates the arm 222 by lifting and rotating the rotating shaft 221. The rotation direction is, for example, Figure 4 The direction of arrow 225 in FIG. 2 (clockwise).

[0053] In addition, in this embodiment, although the part having the function of raising and lowering the arm 222 and the function of rotating the arm 222 is referred to as an arm raising and lowering rotating part, it may also be a structure having one of the functions independently. In this case, it is referred to as an arm rotating part or an arm raising and lowering part. In addition, in the case of a structure having two or one of the functions, it is also referred to as an arm control part. The details of the movement of the arm 222 will be described later.

[0054] (Exhaust section)

[0055] use Figure 1 and Figure 3 , the first exhaust unit 270 for exhausting the atmosphere of the processing chambers 201a to 201d to the outside of the processing container 202 is described.

[0056] The second wall portions 292a to 292d of the cover-like structures 290a to 290d are provided with exhaust holes 271 (271a, 271b, 271c, 271d), respectively. The first exhaust portion 270 includes first exhaust pipes 273 (273a, 273b, 273c, 273d) communicating with the exhaust holes 271a to 271d, and a common exhaust pipe 272 for merging the gases flowing in the first exhaust pipes 273a to 273d.

[0057] An APC (Auto Pressure Controller) 276 is provided in the common exhaust pipe 272. The APC 276 has a valve core (not shown) capable of adjusting the opening, and adjusts the conductance of the first exhaust pipes 273a to 273d according to an instruction from the controller 280. In addition, a valve 277 is provided on the upstream side of the APC 276 in the common exhaust pipe 272. The first exhaust pipes 273a to 273d, the common exhaust pipe 272, the valve 277, and the APC 276 are collectively referred to as a first exhaust section 270.

[0058] In this embodiment, for example, the common exhaust pipe 272 is configured to penetrate the bottom of the processing container 202 downward from positions at equal distances from the exhaust holes 271 a to 271 d in the first exhaust pipes 273 a to 273 d .

[0059] A DP (Dry Pump) 279 is provided downstream of the common exhaust pipe 272. The DP 279 exhausts the atmosphere of the processing chambers 201a to 201d via the first exhaust pipes 273a to 273d and the common exhaust pipe 272.

[0060] use Figure 1 and Figure 3, the second exhaust unit 260 (260a, 260b, 260c, 260d) for exhausting the atmosphere of the transfer chambers 203a to 203d will be described.

[0061] At the bottom of the processing container 202, exhaust holes 261 (261a, 261b, 261c, 261d) are respectively provided in a manner corresponding to the transfer chambers 203 (203a to 203d). The second exhaust units 260a to 260d have second exhaust pipes 262 (262a, 262b, 262c, 262d) communicating with the exhaust holes 261a to 261d.

[0062] APC 266 (266a, 266b, 266c, 266d) is provided in the second exhaust pipes 262a to 262d. APC 266a to 266d has a valve core (not shown) capable of adjusting the opening, and adjusts the flow conductance of the second exhaust pipes 262a to 262d according to the instruction from the controller 280. In addition, valves 267 (267a, 267b, 267c, 267d) are provided on the upstream side of APC 266a to 266d in the second exhaust pipes 262a to 262d, respectively. The second exhaust pipes 262a to 262d, valves 267a to 267d, and APC 266a to 266d are collectively referred to as the second exhaust section 260 (260a, 260b, 260c, 260d).

[0063] DP269 (269a, 269b, 269c, 269d) is provided downstream of the second exhaust pipe 262. DP269 exhausts the atmosphere of the transfer chamber 203 via the second exhaust pipe 262. In the present embodiment, DP269 is provided for each second exhaust unit 260, but the present invention is not limited thereto, and DP269 may be shared by each exhaust unit.

[0064] (Gas supply system)

[0065] use Figure 7 , a first gas supply system 300 for supplying gas into the processing chambers 201a to 201d will be described.

[0066] Gas introduction holes 231a, 231b, 231c, and 231d are provided in the lid parts 295a to 295d of the lid-like structures 290a to 290d, respectively. The lid parts 295a to 295d are connected to the common gas supply pipe 301 via distribution pipes 304 (304a, 304b, 304c, and 304d) in such a manner that the gas introduction holes 231a to 231d are communicated with the common gas supply pipe 301. The distribution pipe 304 is provided with a mass flow controller (MFC) 303 (303a, 303b, 303c, and 303d) as a flow controller (flow control unit) and a valve 302 (302a, 302b, 302c, and 302d) from the upstream. The gas supply amount to each processing chamber 201a to 201d is adjusted using the valves 302a to 302d and the MFC 303a to 303d. A first gas supply pipe 311 , a second gas supply pipe 321 , and a third gas supply pipe 331 are connected to the common gas supply pipe 301 .

[0067] The first gas supply pipe 311 is provided with a first gas supply source 312 , an MFC 313 , and a valve 314 as an opening and closing valve in order from the upstream direction.

[0068] A silicon (Si)-containing gas, for example, which is a main element constituting the film, is supplied from the first gas supply source 312. The Si-containing gas is a raw material gas, and for example, a chlorosilane gas such as chlorosilane (SiH3Cl), dichlorosilane (SiH2Cl2), trichlorosilane (SiHCl3), hexachlorodisilane (Si2Cl6, abbreviated as: HCDS) gas can be used.

[0069] The first gas supply unit 310 (also referred to as a Si-containing gas supply unit) is mainly composed of the first gas supply pipe 311 , the MFC 313 , and the valve 314 .

[0070] The second gas supply pipe 321 is provided with a second gas supply source 322 , an MFC 323 , and a valve 324 in order from the upstream direction.

[0071] For example, a gas containing nitrogen (N) and hydrogen (H), that is, a hydrogen nitride-based gas, is supplied from the second gas supply source 322. The gas containing N and H is a reaction gas, and for example, ammonia (NH3), diimide (N2H2) gas, hydrazine (N2H4) gas, or N3H8 gas can be used.

[0072] The second gas supply unit 320 (also referred to as a reaction gas supply unit) is mainly composed of the second gas supply pipe 321 , the MFC 323 , and the valve 324 .

[0073] The third gas supply pipe 331 is provided with a third gas supply source 332 , an MFC 333 , and a valve 334 in order from the upstream direction.

[0074] The inert gas is supplied from the third gas supply source 332. The inert gas supplied from the third gas supply source 332 functions as a purge gas for purging the gas remaining in the processing chamber 201 in the substrate processing step.

[0075] The third gas supply unit 330 (also referred to as a first inert gas supply unit) is mainly composed of the third gas supply pipe 331 , the MFC 333 , and the valve 334 .

[0076] Any one of the first gas supply unit 310 , the second gas supply unit 320 , and the third gas supply unit 330 , or a combination thereof is referred to as a first gas supply system 300 .

[0077] (Second gas supply system)

[0078] use Figure 1 Next, the fourth gas supply unit 340 as the second inert gas supply unit for supplying the inert gas into the transfer chambers 203 a to 203 d will be described.

[0079] A fourth gas supply source 342 , an MFC 343 , and a valve 344 are mainly provided in order from the upstream direction on the fourth gas supply pipe 341 communicating with a gas introduction hole 345 provided in the processing container 202 .

[0080] The inert gas is supplied from the fourth gas supply source 342. The inert gas supplied from the fourth gas supply source 342 is supplied into the transfer chambers 203a to 203d in the substrate processing step.

[0081] The fourth gas supply unit 340 (also referred to as a second inert gas supply unit) is mainly composed of the fourth gas supply pipe 341 , the MFC 343 , and the valve 344 .

[0082] (Controller)

[0083] The substrate processing apparatus 200 includes a controller 280 for controlling the operation of each part of the substrate processing apparatus 200. The controller 280 may be configured as follows: Figure 8 As described above, the substrate processing apparatus 200 is configured as a computer including a CPU (Central Processing Unit) 280a, a RAM (Random Access Memory) 280b, a storage unit 280c, an I / O port 280d, and a transceiver 280e. The RAM 280b, the storage unit 280c, and the I / O port 280d are configured to be able to exchange data with the CPU 280a via an internal bus 280f. The transmission and reception of data within the substrate processing apparatus 200 is performed according to the instructions of the transceiver 280e.

[0084] The controller 280 is configured to be connected to an input / output device 281 such as a touch panel and an external storage device 282. A receiving unit 283 connected to a host device via a network is provided. The receiving unit 283 can receive information of other devices from the host device.

[0085] The storage unit 280c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), an SSD (Solid State Drive), etc. In the storage unit 280c, a control program for controlling the action of the substrate processing device 200, a process recipe (recipe) recording the steps and conditions of the substrate processing described later, etc., are stored in a readable manner. In addition, the process recipe is a combination of the steps in the substrate processing process described later by the controller 280 and the prescribed results are obtained, and functions as a program. Hereinafter, the process recipe and the control program are collectively referred to as programs. In addition, when the term program is used in this specification, there is a case where only the process recipe is included, only the control program is included, or both are included. In addition, RAM280b is configured as a storage area (work area) for temporarily holding programs and data read out by CPU280a.

[0086] The I / O port 280 d is connected to the gate valves 208A and 208B, the substrate mounting portion lift 218 , the shield plate lift 258 , the arm lift rotation portion 223 and other components of the substrate processing apparatus 200 .

[0087] The CPU 280a is configured to read out and execute a control program from the storage unit 280c, and to read out a process recipe from the storage unit 280c in accordance with an input of an operation command from the input / output device 281. The CPU 280a is configured to control the opening and closing operations of the gate valves 208A and 208B, the operations of the substrate mounting unit elevating unit 218, the shield plate elevating unit 258, and the arm elevating and rotating unit 223, etc., in accordance with the contents of the read process recipe.

[0088] In addition, the controller 280 is not limited to being configured as a dedicated computer, but can also be configured as a general-purpose computer. For example, an external storage device (e.g., a magnetic disk such as a magnetic tape, a floppy disk, a hard disk, an optical disk such as a CD, a DVD, an optical magnetic disk such as an MO, a semiconductor memory such as a USB memory, a memory card, etc.) 282 storing the above-mentioned program is prepared, and the program is installed on a general-purpose computer using the external storage device 282, and the controller 280 of this embodiment can be constituted by this. In addition, the means for supplying the program to the computer is not limited to the case of supplying via the external storage device 282. For example, communication means such as the Internet and a dedicated line can be used, and the program can also be supplied without passing through the external storage device 282. In addition, the storage unit 280c and the external storage device 282 are configured as a computer-readable recording medium. Hereinafter, they are also collectively referred to as recording media. In addition, in this specification, when the term recording medium is used, there is a case where only the storage unit 280c is included, only the external storage device 282 is included, or both are included.

[0089] (2) Substrate processing steps

[0090] Next, as a process of the semiconductor manufacturing process, a substrate processing process in which an insulating film is formed on the wafer 100 using the substrate processing apparatus 200 of the above structure is taken as an example and its outline is described. In addition, as the insulating film, a case where a silicon nitride (SiN) film is formed as a nitride film is taken as an example. In the following description, the operation of each part is controlled by the controller 280.

[0091] (Setting process)

[0092] When performing substrate processing, first, a setting process is performed in the controller 280. In the setting process, setting of process information applicable to the wafer 100 to be processed is performed. The setting of process information is performed, for example, by selecting one of the process information recorded in the storage unit 280c by the CPU 280a according to the input of an operation instruction from the input / output device 281, reading the selected process information into the RAM 280b, and setting the operation setting value for each part via the I / O port 280d.

[0093] (Substrate loading and heating process)

[0094] In the substrate loading and heating process, the wafer 100 is loaded into the processing container 202. Specifically, the substrate loading part 210 is lowered by the substrate loading part lifting part 218, and the lift pin 207 is in a state of protruding from the through hole 214 to the upper surface side of the substrate loading part 210. The gate valve 208A is opened, and the wafer 100 is loaded on the lift pin 207a by the robot 255. Then, the arm 222 that has retreated to the retreat space Y is raised by the arm lifting and rotating part 223, and the arm 222 is rotated, for example, by 45 degrees clockwise and arranged below the wafer 100. Then, the arm 222 is raised, and after the wafer 100 is transferred to the arm 222, the arm 222 is rotated, for example, by 90 degrees clockwise, and the wafer 100 is transferred to the adjacent transfer chamber 203b. Then, the arm 222 is lowered, and the wafer 100 is loaded on the lift pin 207b. The above operation is repeated four times, and four wafers 100 are placed on the lift pins 207a to 207d, respectively (see Figure 6 Then, the gate valve 208A is closed, and the arm 222 is rotated clockwise by, for example, 45°, and then lowered into the retreat space Y. As the arm 222 is lowered, the wafer 100 placed on the lift pins 207a to 207d is placed on each substrate placement surface 211a to 211d (see Figure 2 , Figure 4 ). Then, the substrate placement part 210 is raised by the substrate placement part lifting part 218, and the wafer 100 is arranged at the wafer processing position in the processing chamber 201. In the substrate carrying-in process, the shielding plate lifting part 258 causes the shielding plate 250 to perform the same action as the substrate placement part 210. In this state, the exhaust part is controlled so that the pressure in the processing chamber 201 and the transfer chamber 203 becomes a predetermined pressure, and the heater 213 is controlled so that the surface temperature of the wafer 100 becomes a predetermined temperature.

[0095] (Substrate processing step)

[0096] After the wafer 100 at the wafer processing position reaches a predetermined temperature, the substrate processing step is then performed. In the substrate processing step, according to the processing recipe of the process information set in the setting step, the first gas supply unit 310 is controlled to supply the chlorosilane gas to the processing chamber 201, and the exhaust unit is controlled to exhaust the processing chamber 201, and the wafer 100 is processed. In addition, at this time, the second gas supply unit 320 can also be controlled to make the hydrogen nitride gas and the chlorosilane gas exist in the processing chamber 201 at the same time to perform CVD processing, or the chlorosilane gas and the hydrogen nitride gas are alternately supplied to perform circulation processing. In addition, at this time, the fourth gas supply unit 340 is controlled to continuously supply N2 gas as an inert gas to the transfer chamber 203.

[0097] As a specific example of a film treatment method, i.e., a cyclic treatment, the following method can be considered. For example, a case where HCDS gas is used as a chlorosilane-based gas and NH3 gas is used as a hydrogen nitride-based gas can be cited. In this case, HCDS gas is supplied to the wafer 100 in the first step, and NH3 gas is supplied to the wafer 100 in the second step. Between the first step and the second step, as a purge step, the third gas supply unit 330 is controlled to supply N2 gas, and the atmosphere of the processing chamber 201 is exhausted. By performing the cyclic treatment of the first step, the purge step, and the second step multiple times, a SiN film is formed on the wafer 100.

[0098] (Substrate loading and unloading process)

[0099] After the wafer 100 is subjected to a predetermined process, the processed wafer 100 is unloaded from the processing container 202 in a substrate loading and unloading step. The unloading of the processed wafer 100 is performed by performing the opposite operation of the arm 222 and the robot 255 when loading the wafer 100.

[0100] At this time, when the robot 255 holds an unprocessed wafer 100, the robot 255 carries the unprocessed wafer 100 into the processing container 202. Then, the substrate processing step is performed on the wafer 100 in the processing container 202. On the other hand, when the robot 255 does not hold an unprocessed wafer 100, only the processed wafer 100 is carried out.

[0101] (Judgment process)

[0102] The substrate processing step and the substrate loading and unloading step are repeated until there are no more unprocessed wafers 100. When there are no more unprocessed wafers 100, the above series of processes are terminated.

[0103] (3) Regarding the movement of the substrate mounting unit, the movement of the shielding plate, and the airflow in the substrate processing step

[0104] As described above, the substrate mounting portion 210 is moved by the substrate mounting portion lifting portion 218 , and the shield plate 250 is moved by the shield plate lifting portion 258 .

[0105] In the substrate loading process, after the wafer 100 is placed on the substrate placement surface 211, the substrate placement unit 210 is raised to place the wafer 100 at the wafer processing position. The shielding plate 250 is also raised in the same manner as the substrate placement unit 210.

[0106] By the ascending motion of the substrate mounting portion 210 and the shielding plate 250, the shielding plate 250 is arranged at a position in contact with the lower end of the second wall portion 292 over the entire circumference (see Fig. 9 (b)). A predetermined gap is uniformly formed over the entire circumference between the shielding plate 250 and the lower end of the first wall portion 291. In addition, the lower end side of the first wall portion 291 and the lower end side of the second wall portion 292 are arranged so as to surround the outer circumference of the substrate mounting portion 210, and the lower end of the first wall portion 291 is arranged so as to be located below the substrate mounting surface 211.

[0107] After the substrate mounting portion 210 and the shielding plate 250 have completed their ascending operations, a predetermined gas is supplied into the processing chamber 201 through the gas introduction holes 231 . An inert gas is supplied into the transfer chamber 203 through the gas introduction holes 345 .

[0108] The excess gas supplied into the processing chamber 201 passes through the gap formed between the shielding plate 250 and the lower end of the first wall portion 291 and is exhausted to the exhaust flow path R (see Fig. 9 At this time, since the gap is uniformly formed between the shielding plate 250 and the lower end of the first wall portion 291 over the entire circumference, the gas in the processing chamber 201 can be uniformly discharged to the exhaust flow path R.

[0109] The gas exhausted to the exhaust flow path R is exhausted to the outside of the processing container 202 through the exhaust hole 271. At this time, since the exhaust flow path R is formed between the first wall portion 291 and the second wall portion 292 over the entire circumference, the exhaust flow path R can function as an exhaust buffer portion (gas storage portion). Therefore, even when the gas in the exhaust flow path R is exhausted from the exhaust hole 271, the exhaust of the gas from the processing chamber 201 to the exhaust flow path R can be uniform.

[0110] The lower end side of the first wall portion 291 and the lower end side of the second wall portion 292 are configured to surround the periphery of the substrate mounting portion 210, and the lower end of the first wall portion 291 is located below the substrate mounting surface 211. With such a structure, the gas flow path formed between the processing chamber 201 and the exhaust flow path R becomes a maze-like circuitous structure. Since it is difficult for the gas to pass through the gas flow path, the gas supplied to the processing chamber 201 can be filled in the processing chamber 201. As a result, the pressure in the processing chamber 201 can be maintained at a predetermined high pressure. In addition, since the gas discharged into the exhaust flow path R is discharged to the outside of the processing container 202 through the exhaust hole 271, the pressure in the exhaust flow path R can be maintained at a predetermined low pressure. In this way, since the pressure in the processing chamber 201 is higher than the pressure in the exhaust flow path R, the gas discharged into the exhaust flow path R can be suppressed from flowing back into the processing chamber 201.

[0111] As described above, the shielding plate 250 is arranged at a position that contacts the lower end of the second wall portion 292 over the entire circumference, and a predetermined gap is uniformly formed over the entire circumference between the shielding plate 250 and the lower end of the first wall portion 291. With such a structure, the gas in the processing chamber 201 can be discharged to the exhaust flow path R, and the gas discharged to the exhaust flow path R can be suppressed from being discharged to the transfer chamber 203. In addition, the inactive gas in the transfer chamber 203 can be suppressed from flowing into the exhaust flow path R.

[0112] In addition, the supply of the inert gas into the transfer chamber 203 is continuously performed during the period of supplying the predetermined gas into the processing chamber 201. At this time, the first gas supply unit 310, the second gas supply unit 320, the third gas supply unit 330, the fourth gas supply unit 340, the first exhaust unit 270, and the second exhaust unit 260 are controlled so that the pressure in the transfer chamber 203 is higher than the pressure in the exhaust flow path R. By making the pressure in the transfer chamber 203 higher than the pressure in the exhaust flow path R, the shielding plate 250 can be bent to maintain a close contact state with the lower end of the second wall portion 292. As a result, the exhaust flow path R and the transfer chamber 203 can be reliably blocked, thereby preventing the gas from flowing in and out between the exhaust flow path R and the transfer chamber 203.

[0113] Furthermore, even when the inert gas in the transfer chamber 203 flows into the exhaust flow path R due to pressure fluctuations during substrate processing, the gas flow path formed between the processing chamber 201 and the exhaust flow path R has a maze-like circuitous structure. With such a structure, since it is difficult for gas to pass through the gas flow path, it is possible to prevent the inert gas from flowing into the processing chamber 201. Furthermore, since the pressure in the exhaust flow path R is maintained at a predetermined low pressure, the inert gas can be discharged from the exhaust flow path R to the outside of the processing container 202 without flowing into the processing chamber 201.

[0114] The substrate mounting portion lifting portion 218 and the shielding plate lifting portion 258 are configured to be able to be lifted and lowered independently. The shielding plate 250 can be moved independently while the height of the substrate mounting portion 210 is maintained. In addition, the substrate mounting portion 210 can be moved independently while the height of the shielding plate 250 is maintained. For example, the shielding plate 250 can be moved independently to adjust the distance (gap) between the shielding plate 250 and the first wall portion 291 and the gap between the shielding plate 250 and the second wall portion 292, thereby adjusting the exhaust characteristics. In addition, the substrate mounting portion 210 can be moved independently to adjust the gap between the substrate mounting portion 210 and the gas inlet hole 231, thereby adjusting the gas supply characteristics.

[0115] (5) Effects of this method

[0116] According to this aspect, one or more of the following effects are achieved.

[0117] (a) In this embodiment, the first wall portion 291 and the second wall portion 292 are arranged on the outer peripheral side of the substrate mounting portion 210, and the shielding plate 250 is arranged below the substrate mounting portion 210 and extends to the lower side of the lower end of the second wall portion 292. With such a structure, the processing chamber 201 and the transfer chamber 203 are divided, so that the gas in the processing chamber 201 can be suppressed from flowing into the transfer chamber 203 and the gas in the transfer chamber 203 can be suppressed from flowing into the processing chamber 201 during the substrate processing step.

[0118] In this embodiment, an exhaust passage R is formed between the first wall portion 291 and the second wall portion 292. With such a structure, excess gas supplied into the processing chamber 201 can be exhausted to the outside of the processing chamber 201. In addition, even if the gas in the transfer chamber 203 flows into the exhaust passage R, the gas can be exhausted to the outside of the processing container 202 through the exhaust passage R.

[0119] (b) In this embodiment, the distance between the shielding plate 250 and the lower end of the first wall portion 291 is longer than the distance between the shielding plate 250 and the lower end of the second wall portion 292, that is, the lower end of the second wall portion 292 is closer to the shielding plate 250 than the lower end of the first wall portion 291. With such a structure, the gas in the processing chamber 201 can be discharged to the exhaust flow path R, and the gas discharged to the exhaust flow path R can be suppressed from being discharged to the transfer chamber 203. In addition, the inactive gas in the transfer chamber 203 can be suppressed from flowing into the exhaust flow path R. More specifically, the gas can be discharged from the processing chamber 201 to the exhaust flow path R in a dominant manner.

[0120] (c) In this embodiment, in the substrate processing step, the lower end side of the first wall portion 291 and the lower end side of the second wall portion 292 are configured to surround the outer periphery of the substrate mounting portion 210, and the lower end of the first wall portion 291 is configured to be located below the substrate mounting surface 211. With such a structure, the gas flow path formed between the processing chamber 201 and the exhaust flow path R has a circuitous structure like a maze, so that it is difficult for the gas in the gas flow path to pass. Therefore, after the prescribed gas supplied to the processing chamber 201 is effectively filled in the processing chamber 201, the prescribed gas can be discharged into the exhaust flow path R. In addition, even if the inactive gas in the transfer chamber 203 flows into the exhaust flow path R, it is possible to avoid the inactive gas from flowing into the processing chamber 201.

[0121] (d) In this embodiment, the lower end side of the first wall portion 291 and the lower end side of the second wall portion 292 are configured to surround the outer periphery of the substrate mounting portion 210, and the lower end of the first wall portion 291 is located below the substrate mounting surface 211. With such a structure, the gas flow path formed between the processing chamber 201 and the exhaust flow path R has a circuitous structure like a maze, and it is difficult for the gas to pass through the gas flow path, so that the gas supplied to the processing chamber 201 can be filled in the processing chamber 201. As a result, the pressure in the processing chamber 201 can be maintained at a predetermined high pressure. In addition, since the gas discharged to the exhaust flow path R is discharged to the outside of the processing container 202 through the exhaust hole 271, the pressure in the exhaust flow path R can be maintained at a predetermined low pressure. In this way, since the pressure in the processing chamber 201 is configured to be higher than the pressure in the exhaust flow path R, it is possible to suppress the gas discharged to the exhaust flow path R from flowing back into the processing chamber 201.

[0122] (e) In this embodiment, in the substrate processing step, the lower end of the second wall portion 292 is configured to be in contact with the shielding plate 250 over the entire circumference. With such a structure, it is possible to suppress the gas exhausted to the exhaust flow path R from being exhausted to the transfer chamber 203. In addition, it is possible to reliably suppress the inert gas in the transfer chamber 203 from flowing into the exhaust flow path R. As a result, the exhaust function of the exhaust flow path R can be improved.

[0123] (f) In this embodiment, the pressure in the transfer chamber 203 during the substrate processing step is controlled to be higher than the pressure in the exhaust flow path R. The pressure difference can maintain the close contact between the second wall portion 292 and the shielding plate 250, so that the exhaust flow path Rb and the transfer chamber 203b can be blocked, thereby reliably preventing the gas in the processing chamber 201 from flowing into the transfer chamber 203 and the gas in the transfer chamber 203 from flowing into the processing chamber 201.

[0124] (g) In this embodiment, even when the inert gas in the transfer chamber 203 flows into the exhaust flow path R due to pressure fluctuations during substrate processing, the gas flow path formed between the processing chamber 201 and the exhaust flow path R has a maze-like circuitous structure. With such a structure, it is difficult for the gas in the gas flow path to pass, so it is possible to prevent the inert gas from flowing into the processing chamber 201. In addition, since the pressure in the exhaust flow path R is maintained at a predetermined low pressure, the inert gas can be discharged from the exhaust flow path R to the outside of the processing container 202 without flowing into the processing chamber 201.

[0125] (h) In this embodiment, the substrate mounting portion lifting portion 218 and the shielding plate lifting portion 258 are configured to be independently liftable. In this way, since the shielding plate 250 can be independently lifted and lowered, the gap between the shielding plate 250 and the first wall portion 291 and the gap between the shielding plate 250 and the second wall portion 292 can be adjusted while the height of the substrate mounting portion 210 is maintained, thereby adjusting the exhaust characteristics. In addition, since the substrate mounting portion 210 can be independently lifted and lowered, the gas supply characteristics to the wafer 100 can be adjusted by adjusting the gap between the substrate mounting portion 210 and the gas introduction hole 231 while the height of the shielding plate 250 is maintained.

[0126] (i) The processing container 202 of this embodiment is provided with substrate mounting portions 210a to 210d, a first gas supply portion 310, a second gas supply portion 320, a third gas supply portion 330, and exhaust passages Ra to Rd. Thus, a plurality of wafers 100 can be processed independently in the processing container 202.

[0127] (j) In the second wall portions 292a to 292d of the present embodiment, a first exhaust unit 270 for exhausting the gas in the exhaust flow paths Ra to Rd is provided. The common exhaust pipe 272 of the first exhaust unit 270 is arranged at positions with equal distances from the exhaust holes 271a to 271d in the first exhaust pipes 273a to 273d, and the exhaust conductances of the exhaust flow paths Ra to Rd are the same. With such a structure, the exhaust conductances of the processing chambers 201a to 201d can be kept constant. As a result, the uniformity of substrate processing in the processing chambers 201a to 201d can be improved.

[0128] <Other aspects of the present invention>

[0129] Although the embodiments of the present invention have been specifically described above, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the gist of the present invention.

[0130] In the above-mentioned embodiment, the shielding plate 250 is arranged so as to be in contact with the lower end of the second wall portion 292 over the entire circumference (see Fig. 9 For example, a portion of the lower end of the second wall portion 292 may be in contact with the shielding plate 250 (see Fig. 9 (c)). Fig. 9 (b) Fig. 9 (c) shows the Fig. 9The positional relationship between the shielding plate 250 and the second wall portion 292 when viewed from the position indicated by "P" in (a) in the direction of the solid arrow. In order to suppress the inflow and outflow of gas between the exhaust flow path R and the transfer chamber 203, it is desirable to configure them in a manner of contacting the entire circumference, but in this case, the distance between the shielding plate 250 and the second wall portion 292 can also be fixed, and at least part of the effects described in the above manner can be obtained. In particular, it is effective when the shape of the lower end of the second wall portion 292 and the shape of the upper surface side of the shielding plate 250 are inconsistent and cannot be in contact with each other over the entire circumference.

[0131] When a part of the lower end of the second wall portion 292 is configured to contact the shielding plate 250, it is preferable that the portion where the lower end of the second wall portion 292 contacts the shielding plate 250 is provided at a predetermined interval in the circumferential direction of the shielding plate 250. Thus, the flow conductance in the circumferential direction between the processing chamber 201 and the transfer chamber 203 can be kept constant. The exhaust characteristics of the gas exhausted from the processing chamber 201 in the circumferential direction can be kept constant, and as a result, the processing uniformity of the wafer 100 can be improved.

[0132] In addition, for example, the lower end of the second wall portion 292 and the shielding plate 250 may be open (see Fig. 9 (d)). Fig. 9 (d) shows the Fig. 9 The positional relationship between the shielding plate 250 and the second wall portion 292 when the position indicated by "P" in (a) is viewed in the direction of the solid arrow. In terms of suppressing the inflow and outflow of gas between the exhaust flow path R and the transfer chamber 203, it is desirable to arrange them in contact over the entire circumference, but in this case, at least a part of the effects described in the above-mentioned method can be obtained.

[0133] As described above, the substrate placement lift 218 and the shield plate lift 258 of the present invention are configured to be independently liftable. Therefore, for example, even when the shield plate 250 and the lower end of the second wall 292 are arranged to be in contact with each other over the entire circumference at the start of the substrate processing step, in the middle of the substrate processing step, for example, when it is necessary to adjust the pressure difference between the transfer chamber 203 and the exhaust flow path R, the shield plate 250 can be lowered while the position of the substrate placement 210 is maintained, with the lower end of the second wall 292 and the shield plate 250 open. In this way, the present invention can make the shield plate 250 and the lower end of the second wall 292 contact or open according to the situation in the middle of the substrate processing step while the position of the substrate placement 210 is maintained.

[0134] In the above-mentioned embodiment, the common exhaust pipe 272 is configured to penetrate the bottom of the processing container 202 from below, but the present invention is not limited thereto. For example, the common exhaust pipe 272 may be configured to penetrate the upper portion of the processing container 202 from above (see Fig.10 ). In this case, the same effects as those described in the above embodiment can be obtained.

[0135] In the above embodiment, the material of the shielding plate 250 is not described, but it is preferably a material that bends due to the pressure difference between the exhaust flow path R and the transfer chamber 203. In this case, the lower end of the second wall portion 292 and the shielding plate 250 can be more reliably brought into close contact.

[0136] In the above-mentioned embodiment, the case where the lower end of the first wall portion 291 is located below the substrate mounting surface 211 is described as an example, but the present invention is not limited thereto. For example, the lower end of the first wall portion 291 may be located at substantially the same position as the substrate mounting surface 211, or the lower end of the first wall portion 291 may be located above the substrate mounting surface 211. In these cases, at least a part of the effects described in the above-mentioned embodiment can be obtained.

[0137] In addition, for example, in the above-mentioned method, although an example of forming a SiN film on the wafer 100 is described, the present invention is not limited to this. For example, in the case where a silicon film (Si film), a silicon oxide film (SiO film), a silicon oxynitride film (SiON film), etc. are formed on the wafer 100, the present invention can also be well applied. In addition, in the case where a metal thin film such as a titanium film (Ti film), a titanium oxide film (TiO film), a titanium nitride film (TiN film), an aluminum film (Al film), an aluminum oxide film (AlO film), a hafnium oxide film (HfO) film, etc. is formed on the wafer 100, the present invention can also be well applied. In these cases, the same effect as the above-mentioned method can be obtained.

[0138] The present invention is not limited to the process of forming films on multiple wafers 100, and can also be well applied to the case where multiple wafers 100 are individually etched, annealed, or plasma modified. In these cases, the same effect as the above-mentioned method can be obtained.

Claims

1. A substrate processing device, characterized in that: have: a substrate mounting portion having a substrate mounting surface on which a substrate is mounted; a processing container forming a processing chamber for accommodating the substrate mounting portion and processing the substrate mounted on the substrate mounting surface; a gas supply unit for supplying a processing gas to the processing chamber; a first wall portion disposed on an outer peripheral side of the substrate mounting portion; a second wall portion disposed at a position further outwardly of the substrate mounting portion than the first wall portion; an exhaust flow path formed between the first wall portion and the second wall portion and used for exhausting gas in the processing chamber; and The shielding plate is arranged below the substrate mounting portion, the lower end of the second wall portion is closer to the shielding plate than the lower end of the first wall portion, and the shielding plate extends at least to the lower side of the lower end of the second wall portion.

2. The substrate processing apparatus according to claim 1, wherein: The lower end portion of the second wall portion is configured to be in contact with the shield plate.

3. The substrate processing apparatus according to claim 1, wherein: The lower end portion side of the first wall portion and the lower end portion side of the second wall portion are configured to surround the outer periphery of the substrate mounting portion.

4. The substrate processing apparatus according to claim 1, wherein: The substrate mounting portion and the shielding plate are configured to be able to move up and down, respectively.

5. The substrate processing apparatus according to claim 1, wherein: A part of the lower end portion of the second wall portion is configured to be in contact with the shield plate.

6. The substrate processing apparatus according to claim 5, wherein: Locations where the lower end of the second wall portion contacts the shield plate are provided at predetermined intervals in the circumferential direction of the shield plate.

7. A substrate processing device, characterized in that: have: a substrate mounting portion having a substrate mounting surface on which a substrate is mounted; a processing container forming a processing chamber for accommodating the substrate mounting portion and processing the substrate mounted on the substrate mounting surface; a gas supply unit for supplying a processing gas to the processing chamber; a first wall portion disposed on an outer peripheral side of the substrate mounting portion; a second wall portion disposed at a position further outwardly of the substrate mounting portion than the first wall portion; an exhaust flow path formed between the first wall portion and the second wall portion and used for exhausting gas in the processing chamber; and The shielding plate is configured to be arranged below the substrate mounting portion, the distance between the shielding plate and the lower end of the first wall portion is longer than the distance between the shielding plate and the lower end of the second wall portion, and the shielding plate extends at least to the lower side of the lower end of the second wall portion.

8. The substrate processing apparatus according to claim 7, wherein: The lower end portion of the second wall portion is configured to be in contact with the shield plate.

9. A substrate processing device, characterized in that: have: a substrate mounting portion having a substrate mounting surface on which a substrate is mounted; a processing container forming a processing chamber for accommodating the plurality of substrate mounting portions and for processing the substrates mounted on the substrate mounting surface; a plurality of gas supply parts for supplying processing gas to the processing chamber; a plurality of first wall portions arranged on the outer peripheral side of each of the substrate mounting portions; a plurality of second wall portions arranged at a position further outwardly of the substrate mounting portion than the respective first wall portions; a plurality of exhaust flow paths formed between each of the first wall portions and each of the second wall portions and used for exhausting gas in the processing chamber; a shielding plate arranged below the substrate mounting portion and extending at least to the lower side of the lower end of the second wall portion; The first exhaust portion is provided on each of the second wall portions, and exhausts the gas in the exhaust flow path to the outside of the processing container, and is configured so that the exhaust flow conductances of the exhaust flow paths are the same.

10. The substrate processing apparatus according to claim 9, wherein: Also features: a first inert gas supply unit for supplying an inert gas into the processing chamber; a transfer chamber adjacent to the processing chamber; a second inert gas supply unit for supplying an inert gas into the transfer chamber; a second exhaust unit configured to exhaust the inert gas in the transfer chamber; and A control mechanism controls at least one of the first exhaust unit, the second exhaust unit, the first inert gas supply unit, and the second inert gas supply unit so that the pressure in the transfer chamber is higher than the pressure in the exhaust flow path.

11. A method for manufacturing a semiconductor device, characterized in that: have: (a) step of placing a substrate on a substrate placing portion having a substrate placing surface; (b) supplying a processing gas from a gas supply unit to a processing chamber provided in a processing container and accommodating the substrate mounting unit; and (c) step of exhausting the gas in the processing chamber, In step (c), the gas is discharged to an exhaust flow path formed between a first wall portion and a second wall portion, wherein the first wall portion is arranged on the outer peripheral side of the substrate mounting portion, and the second wall portion is arranged on the outer peripheral side of the substrate mounting portion compared to the first wall portion. At this time, the gas is discharged to the exhaust flow path through the space between the first wall portion, the second wall portion and a shielding plate, wherein the shielding plate is configured to be arranged below the substrate mounting portion, the lower end portion of the second wall portion is closer to the shielding plate than the lower end portion of the first wall portion, and the shielding plate extends at least to the lower side of the lower end of the second wall portion.

12. A computer-readable recording medium having a program recorded thereon, characterized in that: The program causes the substrate processing device to execute the following steps through a computer: (a) step, placing a substrate on a substrate placing portion having a substrate placing surface; (b) supplying a processing gas from a gas supply unit to a processing chamber formed in a processing container and accommodating the substrate mounting unit; and (c) step, exhausting the gas in the processing chamber, In step (c), the gas is discharged to an exhaust flow path formed between a first wall portion and a second wall portion, wherein the first wall portion is arranged on the outer peripheral side of the substrate mounting portion, and the second wall portion is arranged on the outer peripheral side of the substrate mounting portion compared to the first wall portion. At this time, the gas is discharged to the exhaust flow path through the space between the first wall portion, the second wall portion and a shielding plate, wherein the shielding plate is configured to be arranged below the substrate mounting portion, the lower end portion of the second wall portion is closer to the shielding plate than the lower end portion of the first wall portion, and the shielding plate extends at least to the lower side of the lower end of the second wall portion.

13. A substrate processing method, characterized in that: have: (a) step of placing a substrate on a substrate placing portion having a substrate placing surface; (b) supplying a processing gas from a gas supply unit to a processing chamber provided in a processing container and accommodating the substrate mounting unit; and (c) step of exhausting the gas in the processing chamber, In step (c), the gas is discharged to an exhaust flow path formed between a first wall portion and a second wall portion, wherein the first wall portion is arranged on the outer peripheral side of the substrate mounting portion, and the second wall portion is arranged on the outer peripheral side of the substrate mounting portion compared to the first wall portion. At this time, the gas is discharged to the exhaust flow path through the space between the first wall portion, the second wall portion and a shielding plate, wherein the shielding plate is configured to be arranged below the substrate mounting portion, the lower end portion of the second wall portion is closer to the shielding plate than the lower end portion of the first wall portion, and the shielding plate extends at least to the lower side of the lower end of the second wall portion.

14. A method for manufacturing a semiconductor device, characterized in that: have: (a) step of placing a substrate on a substrate placing portion having a substrate placing surface; (b) supplying a processing gas from a gas supply unit to a processing chamber provided in a processing container and accommodating the substrate mounting unit; and (c) step of exhausting the gas in the processing chamber, In step (c), the gas is discharged to an exhaust flow path formed between a first wall portion and a second wall portion, wherein the first wall portion is arranged on the outer peripheral side of the substrate mounting portion, and the second wall portion is arranged on the outer peripheral side of the substrate mounting portion compared to the first wall portion. At this time, the gas is discharged to the exhaust flow path through the space between the first wall portion, the second wall portion and a shielding plate, wherein the shielding plate is configured to be arranged below the substrate mounting portion, the distance between the shielding plate and the lower end portion of the first wall portion is longer than the distance between the shielding plate and the lower end portion of the second wall portion, and the shielding plate extends at least to the lower side of the lower end of the second wall portion.

15. A method for manufacturing a semiconductor device, characterized in that: have: (a) step of placing a substrate on a plurality of substrate placing portions having a substrate placing surface; (b) supplying a processing gas from a gas supply unit to a processing chamber provided in a processing container and accommodating a plurality of the substrate mounting units; and (c) step of exhausting the gas in the processing chamber, In step (c), the gas is discharged toward each exhaust flow path formed between a plurality of first wall portions and a plurality of second wall portions, wherein the plurality of first wall portions are arranged on the outer peripheral side of each of the substrate mounting portions, and the plurality of second wall portions are arranged on the outer peripheral side of the substrate mounting portion compared with each of the first wall portions. At this time, the gas is discharged toward the exhaust flow path through the space between the first wall portions, the second wall portions and a shielding plate, wherein the shielding plate is configured to be arranged below the substrate mounting portion and extend at least to the lower side of the lower end of the second wall portion, and then, the gas is discharged to the outside of the processing container from the first exhaust portion which is configured in the same manner as the exhaust flow conductance of each of the exhaust flow paths and is provided on each of the second wall portions.

16. A substrate processing method, characterized in that: have: (a) step of placing a substrate on a substrate placing portion having a substrate placing surface; (b) supplying a processing gas from a gas supply unit to a processing chamber provided in a processing container and accommodating the substrate mounting unit; and (c) step of exhausting the gas in the processing chamber, In step (c), the gas is discharged to an exhaust flow path formed between a first wall portion and a second wall portion, wherein the first wall portion is arranged on the outer peripheral side of the substrate mounting portion, and the second wall portion is arranged on the outer peripheral side of the substrate mounting portion compared to the first wall portion. At this time, the gas is discharged to the exhaust flow path through the space between the first wall portion, the second wall portion and a shielding plate, wherein the shielding plate is configured to be arranged below the substrate mounting portion, the distance between the shielding plate and the lower end portion of the first wall portion is longer than the distance between the shielding plate and the lower end portion of the second wall portion, and the shielding plate extends at least to the lower side of the lower end of the second wall portion.

17. A substrate processing method, characterized in that: have: (a) step of placing a substrate on a plurality of substrate placing portions having a substrate placing surface; (b) supplying a processing gas from a gas supply unit to a processing chamber provided in a processing container and accommodating a plurality of the substrate mounting units; and (c) step of exhausting the gas in the processing chamber, In step (c), the gas is discharged toward each exhaust flow path formed between a plurality of first wall portions and a plurality of second wall portions, wherein the plurality of first wall portions are arranged on the outer peripheral side of each of the substrate mounting portions, and the plurality of second wall portions are arranged on the outer peripheral side of the substrate mounting portion compared with each of the first wall portions. At this time, the gas is discharged toward the exhaust flow path through the space between the first wall portions, the second wall portions and a shielding plate, wherein the shielding plate is configured to be arranged below the substrate mounting portion and extend at least to the lower side of the lower end of the second wall portion, and then, the gas is discharged to the outside of the processing container from the first exhaust portion which is configured in the same manner as the exhaust flow conductance of each of the exhaust flow paths and is provided on each of the second wall portions.

18. A computer-readable recording medium having a program recorded thereon, characterized in that: The program causes the substrate processing device to execute the following steps through a computer: (a) step, placing a substrate on a substrate placing portion having a substrate placing surface; (b) supplying a processing gas from a gas supply unit to a processing chamber formed in a processing container and accommodating the substrate mounting unit; and (c) step, exhausting the gas in the processing chamber, In step (c), the gas is discharged to an exhaust flow path formed between a first wall portion and a second wall portion, wherein the first wall portion is arranged on the outer peripheral side of the substrate mounting portion, and the second wall portion is arranged on the outer peripheral side of the substrate mounting portion compared to the first wall portion. At this time, the gas is discharged to the exhaust flow path through the space between the first wall portion, the second wall portion and a shielding plate, wherein the shielding plate is configured to be arranged below the substrate mounting portion, the distance between the shielding plate and the lower end portion of the first wall portion is longer than the distance between the shielding plate and the lower end portion of the second wall portion, and the shielding plate extends at least to the lower side of the lower end of the second wall portion.

19. A computer-readable recording medium having a program recorded thereon, characterized in that: The program causes the substrate processing device to execute the following steps through a computer: (a) step of placing a substrate on a plurality of substrate placing portions having a substrate placing surface; (b) a step of supplying a processing gas from a gas supply unit to a processing chamber formed in a processing container and accommodating a plurality of the substrate mounting units; and (c) step, exhausting the gas in the processing chamber, In step (c), the gas is discharged toward each exhaust flow path formed between a plurality of first wall portions and a plurality of second wall portions, wherein the plurality of first wall portions are arranged on the outer peripheral side of each of the substrate mounting portions, and the plurality of second wall portions are arranged on the outer peripheral side of the substrate mounting portion compared to each of the first wall portions. At this time, the gas is discharged toward the exhaust flow path through the space between the first wall portions, the second wall portions and a shielding plate, wherein the shielding plate is configured to be arranged below the substrate mounting portion and extend at least to the lower side of the lower end of the second wall portion, and then, the gas is discharged to the outside of the processing container from the first exhaust portion which is configured in the same manner as the exhaust flow conductance of each of the exhaust flow paths and is provided on each of the second wall portions.

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