Semiconductor substrate and method for manufacturing semiconductor device

Abstract

The present invention provides a method for manufacturing a semiconductor substrate and a semiconductor device with high reliability. The semiconductor substrate comprises: a substrate having a substrate surface and having a first outer diameter; a metal layer disposed on the substrate surface and having a second outer diameter smaller than the first outer diameter; a first adhesive tape having a first base material and a first adhesive layer, being adhered to the substrate surface and the metal layer via the first adhesive layer, the first base material having an annular shape, having a first surface and a second surface opposite to the first surface, the annular shape having a third outer diameter smaller than the first outer diameter and larger than the second outer diameter and a third inner diameter smaller than the second outer diameter, the first adhesive layer being disposed on the first surface; and a second adhesive tape having a second base material and a second adhesive layer, being adhered to the second surface and the metal layer via the second adhesive layer, the second base material having a fourth outer diameter smaller than the first outer diameter and larger than the third inner diameter, having a third surface and a fourth surface opposite to the third surface, the second adhesive layer being disposed on the third surface.

Description

[0001] This application claims priority based on Japanese Patent Application No. 2020-158214 (filing date: September 23, 2020), the entire contents of which are incorporated herein by reference. Technical Field

[0002] The present invention relates to a method for manufacturing a semiconductor substrate and a semiconductor device. Background Art

[0003] Semiconductor devices such as MOSFET (Metal Oxide Semiconductor Field Effect Transistor) are used for applications such as power conversion.

[0004] In the manufacture of semiconductor substrates using such semiconductor devices, a plating process is used to form electrodes. In the plating process, a protective adhesive tape is attached to portions to which plating liquid is not desired to be supplied. Summary of the invention

[0005] An object of the present invention is to provide a method for manufacturing a semiconductor substrate and a semiconductor device with high reliability.

[0006] A semiconductor substrate according to an embodiment comprises: a substrate having a substrate surface and having a first outer diameter; a metal layer arranged on the substrate surface and having a second outer diameter smaller than the first outer diameter; a first adhesive tape having a first base material and a first adhesive layer, being adhered to the substrate surface and the metal layer via the first adhesive layer, the first base material having an annular shape, having a first surface and a second surface opposite to the first surface, the annular shape having a third outer diameter smaller than the first outer diameter and larger than the second outer diameter and a third inner diameter smaller than the second outer diameter, the first adhesive layer being arranged on the first surface; and a second adhesive tape having a second base material and a second adhesive layer, being adhered to the second surface and the metal layer via the second adhesive layer, the second base material having a fourth outer diameter smaller than the first outer diameter and larger than the third inner diameter, having a third surface and a fourth surface opposite to the third surface, the second adhesive layer being arranged on the third surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 (a) Figure 1 (b) is a schematic cross-sectional view of a semiconductor substrate and a semiconductor device according to an embodiment.

[0008] Figure 2 (a) Figure 2 (b) is a schematic cross-sectional view of the first adhesive tape and the second adhesive tape according to the embodiment.

[0009] Figure 3Schematic cross-sectional views showing manufacturing steps in a first method for manufacturing a semiconductor device according to an embodiment.

[0010] Figure 4 Schematic cross-sectional views showing manufacturing steps in a first method for manufacturing a semiconductor device according to an embodiment.

[0011] Figure 5 Schematic cross-sectional views showing manufacturing steps in a first method for manufacturing a semiconductor device according to an embodiment.

[0012] Figure 6 Schematic cross-sectional views showing manufacturing steps in a first method for manufacturing a semiconductor device according to an embodiment.

[0013] Figure 7 It is a schematic cross-sectional view showing a manufacturing process in a second manufacturing method of a semiconductor device according to an embodiment.

[0014] Figure 8 It is a schematic cross-sectional view showing a manufacturing process in a second manufacturing method of a semiconductor device according to an embodiment.

[0015] Fig. 9 It is a schematic cross-sectional view showing a manufacturing process in a third manufacturing method of a semiconductor device according to an embodiment.

[0016] Fig.10 It is a schematic cross-sectional view showing a manufacturing process in a third manufacturing method of a semiconductor device according to an embodiment. DETAILED DESCRIPTION

[0017] Below, while referring to the attached Figure 1 In the following description, the same reference numerals are given to the same components and the description of components and the like that have been described once will be appropriately omitted.

[0018] In this specification, in order to indicate the positional relationship of parts, the upper side of the drawings is described as "upper" and the lower side of the drawings is described as "lower". In this specification, the concepts of "upper" and "lower" are not necessarily terms indicating the relationship with the direction of gravity.

[0019] (Implementation Method)

[0020] A semiconductor substrate according to an embodiment comprises: a substrate having a substrate surface having a first outer diameter; a metal layer arranged on the substrate surface and having a second outer diameter smaller than the first outer diameter; a first adhesive tape having a first base material and a first adhesive layer, being adhered to the substrate surface and the metal layer via the first adhesive layer, the first base material having an annular shape, having a first surface and a second surface opposite to the first surface, the annular shape having a third outer diameter smaller than the first outer diameter and larger than the second outer diameter and a third inner diameter smaller than the second outer diameter, the first adhesive layer being arranged on the first surface; and a second adhesive tape having a second base material and a second adhesive layer, being adhered to the second surface and the metal layer via the second adhesive layer, the second base material having a fourth outer diameter smaller than the first outer diameter and larger than the third inner diameter, having a third surface and a fourth surface opposite to the third surface, the second adhesive layer being arranged on the third surface.

[0021] Figure 1 Schematic cross-sectional views of a semiconductor wafer 100 and a semiconductor device 200 according to an embodiment. Figure 1 (a) is a schematic cross-sectional view of a semiconductor wafer 100 according to an embodiment. Figure 1 (b) is a schematic cross-sectional view of the semiconductor device 200 according to the embodiment.

[0022] Figure 2 It is a schematic cross-sectional view of the first adhesive tape 50 and the second adhesive tape 70 according to the embodiment.

[0023] use Figure 1 and Figure 2 , a semiconductor wafer 100 and a semiconductor device 200 according to an embodiment are described.

[0024] The semiconductor substrate 100 includes a substrate 2, a metal layer 20, a first adhesive tape 50, a second adhesive tape 70, an insulating film 90, an electrode 92, and a plating layer 94. The semiconductor substrate 100 of the embodiment is, for example, a semiconductor wafer on which a MOSFET is formed.

[0025] The substrate 2 includes a semiconductor material. Here, the semiconductor material is, for example, Si (silicon), SiC (silicon carbide), GaAs (gallium arsenide), or GaN (gallium nitride), but is not limited thereto. The outer diameter of the substrate 2 is a first outer diameter OD1.

[0026] For the substrate 2, for example, a portion of the substrate 2 is ground and thinned, thereby forming a recess 10. The bottom surface of the recess 10 is a first substrate surface (an example of a substrate surface) 12. A second substrate surface 14 is provided on the opposite side of the first substrate surface 12. In addition, as the recess 10 is formed, an annular convex portion 4 is formed around the recess 10. The annular convex portion 4 has a top portion 6 and an inner side portion 8. The inner side portion 8 connects the top portion 6 to the first substrate surface 12. The inner diameter of the top portion 6 is ID5. In addition, the angle formed by the first substrate surface 12 and the inner side portion 8 is not limited to ID5. Figure 1 In addition, the annular protrusion 4 may not be provided.

[0027] A MOSFET is formed on the second substrate surface 14. An electrode 92 is provided on the second substrate surface 14. The electrode 92 corresponds to, for example, a source electrode or a gate electrode of the MOSFET. The electrode 92 includes, for example, Al (aluminum). A plating layer 94 is provided on the surface of the electrode 92. The plating layer 94 includes, for example, an alloy of Ni (nickel) and Au (gold). The plating layer 94 is provided to increase the bonding strength between a bonding material such as solder (not shown) and the electrode 92. The plating layer 94 is formed by a non-electrolytic plating method by immersing the substrate 2 in a predetermined plating solution (not shown). Each electrode 92 and the plating layer 94 are separated by an insulating film 90 including polyimide or the like. In addition, the forms of the electrode 92, the plating layer 94 and the insulating film 90 are not limited to those in Figure 1 The form shown in the figure.

[0028] Here, an X direction, a Y direction perpendicular to the X direction, and a Z direction perpendicular to the X direction and the Y direction are defined. It is assumed that the first substrate surface 12 and the second substrate surface 14 are provided parallel to the XY plane.

[0029] The metal layer 20 is provided over the first substrate surface 12, the inner side surface portion 8 of the annular protrusion 4, and a portion of the top portion 6. The second outer diameter OD2 of the metal layer 20 is smaller than the first outer diameter OD1 of the substrate 2. The metal layer 20 includes, for example, Cu (copper) or Al, and is formed by a high vacuum sputtering method or the like. The metal layer 20 corresponds to the drain electrode of the MOSFET.

[0030] The first adhesive tape 50 includes: a first base material 56 having a first surface 52 and a second surface 54 opposite to the first surface 52; a first adhesive layer 62 provided on the first surface 52; and a third adhesive layer 64 provided on the second surface 54. The first adhesive tape 50 is annular in shape, and has a third outer diameter OD3 that is smaller than the first outer diameter OD1 and larger than the second outer diameter OD2, and a third inner diameter ID3 that is smaller than the second outer diameter OD2 and larger than the fifth inner diameter ID5. The first surface 52 of the first adhesive tape 50 is bonded to the top portion 6 and the metal layer 20 provided on the top portion 6 via the first adhesive layer 62. In addition, the third adhesive layer 64 may not be provided.

[0031] The second adhesive tape 70 includes: a second base material 76 having a third surface 72 and a fourth surface 74 opposite to the third surface 72; and a second adhesive layer 82 provided on the third surface 72. The second adhesive tape 70 has a fourth outer diameter OD4 that is smaller than the first outer diameter OD1 and larger than the third inner diameter ID3. The second adhesive layer 82 is adhered to the third adhesive layer 64. The third surface 72 of the second adhesive tape 70 is adhered to the second surface 54 of the first adhesive tape 50 via the second adhesive layer 82 and the third adhesive layer 64. In addition, the third surface 72 of the second adhesive tape 70 is adhered to the metal layer 20 provided on a part of the top portion 6, the metal layer 20 provided on the inner side surface 8, and the metal layer 20 provided on the first substrate surface 12.

[0032] The first adhesive tape 50 and the second adhesive tape 70 are used to protect the metal layer 20 from contacting the predetermined plating solution when the substrate 2 is immersed in a predetermined plating solution for forming the plating layer 94 .

[0033] In addition, Figure 1 , Figures 3 to 10 In FIG. 5 , the first substrate 56, the first adhesive layer 62, and the third adhesive layer 64 are collectively shown as the first adhesive tape 50. Figure 1 , Figures 3 to 10 In FIG. 8 , the second base material 76 and the second adhesive layer 82 are shown together as the second adhesive tape 70 .

[0034] exist Figure 1 In the figure, it is assumed that the fourth outer diameter OD4 is equal to the third outer diameter OD3. However, the fourth outer diameter OD4 may not be equal to the third outer diameter OD3. The fourth outer diameter OD4 is preferably equal to or less than the third outer diameter OD3.

[0035] Through Figure 1 The semiconductor substrate 100 shown in (a) is die-cut to obtain Figure 1 A semiconductor device 200 in which a part of the semiconductor substrate 100 is chipped as shown in (b).

[0036] Next, a method for manufacturing the semiconductor device 200 according to the embodiment will be described.

[0037] A first method for manufacturing a semiconductor device of an embodiment comprises: a process of preparing a substrate, the substrate having a substrate surface and a first outer diameter, a metal layer on the substrate surface, the metal layer having a second outer diameter smaller than the first outer diameter; a process of attaching a first adhesive tape having a first base material and a first adhesive layer to the substrate and the metal layer via the first adhesive layer, the first base material having a third outer diameter larger than the second outer diameter, having a first surface and a second surface opposite to the first surface, the first adhesive layer being arranged on the first surface; a process of forming a hole having a third inner diameter smaller than the second outer diameter in the first adhesive tape in a manner that exposes a portion of the metal layer; and a process of attaching a second adhesive tape having a second base material and a second adhesive layer to the second surface and the metal layer via the second adhesive layer, the second base material having a fourth outer diameter larger than the third inner diameter, having a third surface and a fourth surface opposite to the third surface, the second adhesive layer being arranged on the third surface.

[0038] First, a substrate 2 is prepared. The substrate 2 has, for example, an annular convex portion 4, which is provided on the outer periphery of the first substrate surface 12, a top portion 6 and an inner side portion 8 connecting the top portion 6 and the first substrate surface 12, and the inner diameter of the top portion is a fifth inner diameter ID5. The substrate 2 has a first outer diameter OD1. In addition, a metal layer 20 having a second outer diameter OD2 smaller than the first outer diameter OD1 is provided over the first substrate surface 12, the inner side portion 8, and a portion of the top portion 6. An insulating film 90 and an electrode 92 are formed on the second substrate surface 14.

[0039] Next, the first adhesive layer 62 of the first adhesive tape 50 having the third outer diameter OD3 larger than the first outer diameter OD1 is attached to the top portion 6 and the metal layer 20 provided at a portion of the top portion 6. Here, the first adhesive tape 50 is, for example, in a rolled state. Then, the first adhesive tape 50 in the rolled state is attached. The first adhesive tape 50 is, for example, a portion cut from the rolled state, and the first adhesive tape 50 is cut so that the outer diameter is larger than the first outer diameter OD1 ( Figure 3 ). In addition, the outer diameter of the first adhesive tape 50 is the third outer diameter OD3, but in order not to Figure 3 The third outer diameter OD3 is not shown because it overflows.

[0040] Next, a hole 96 having a third inner diameter ID3 smaller than the second outer diameter OD2 is formed in the first adhesive tape 50, so that a portion of the metal layer 20 of the top portion 6, the metal layer 20 of the inner side portion 8, and the metal layer 20 of the first substrate surface 12 are exposed. In forming the hole 96, for example, a well-known tape cutter C ( Figure 4 ).

[0041] Next, the second adhesive layer 82 of the second adhesive tape 70 having a fourth outer diameter OD4 larger than the first outer diameter OD1 is pasted over the second surface 54, a portion of the metal layer 20 of the top portion 6, the metal layer 20 of the inner side surface 8, and the metal layer 20 of the first substrate surface 12. In addition, the second adhesive tape 70 is, for example, in a rolled-up state. Then, the second adhesive tape 70 in the rolled-up state is pasted. The pasted second adhesive tape 70 is a portion cut out from the rolled-up state, and is cut into an outer diameter (fourth outer diameter OD4) larger than the first outer diameter OD1. In addition, by pasting the second adhesive layer 82 in a vacuum, for example, the pasting can be cleanly performed ( Figure 5 ). In addition, the outer diameter of the second adhesive tape 70 is the fourth outer diameter OD4, but in order not to Figure 5 The fourth outer diameter OD4 is not shown due to overflow.

[0042] Next, the first adhesive tape 50 is cut so that the third outer diameter OD3 is smaller than the first outer diameter OD1 and larger than the second outer diameter OD2. Here, for example, the first adhesive tape 50 and the second adhesive tape 70 are cut so that the third outer diameter OD3 is equal to the fourth outer diameter OD4 ( Figure 6 ).

[0043] Next, for example, the semiconductor device in the process of being manufactured is immersed in a predetermined plating solution (not shown) to form a plating layer 94 on the electrode 92 by an electroless plating method. Thus, the semiconductor substrate 100 of the embodiment is obtained. Furthermore, the semiconductor device 200 of the embodiment is obtained by die-cutting the semiconductor substrate 100.

[0044] Next, a second method for manufacturing a semiconductor device according to the embodiment will be described. Figure 4 As shown, the process is the same as the first manufacturing method until a hole 96 having a third inner diameter ID3 that is smaller than the second outer diameter OD2 and larger than the fifth inner diameter ID5 is formed in the first adhesive tape 50 in a manner that exposes a portion of the metal layer 20 of the top portion 6, the metal layer 20 of the inner side portion 8, and the metal layer 20 of the first substrate surface 12.

[0045] Next, the second adhesive layer 82 of the second adhesive tape 70 having the fourth outer diameter OD4 which is smaller than the first outer diameter OD1 and larger than the third inner diameter ID3 is attached to the second surface 54 and the metal layer 20. In other words, in the second manufacturing method, after the second adhesive tape 70 is cut in advance to have the fourth outer diameter OD4, the third surface 72 of the second adhesive tape 70 is attached to the second surface 54 and the metal layer 20 ( Figure 7 ).

[0046] Next, the first adhesive tape 50 is cut so that the third outer diameter OD3 is smaller than the first outer diameter OD1 and larger than the second outer diameter OD2 ( Figure 8). Then, similarly to the first manufacturing method, a plating layer 94 is formed on the electrode 92. Thus, the semiconductor substrate 100 of the embodiment is obtained. Furthermore, by die-cutting the semiconductor substrate 100, the semiconductor device 200 of the embodiment is obtained.

[0047] Next, a third method for manufacturing the semiconductor wafer 100 according to the embodiment will be described.

[0048] A third method for manufacturing a semiconductor device of an embodiment comprises: a process of preparing a substrate, the substrate having a substrate surface and having a first outer diameter, a metal layer on the substrate surface, the metal layer having a second outer diameter smaller than the first outer diameter; a process of attaching a first adhesive tape having a first substrate and a first adhesive layer to the substrate and the metal layer via the first adhesive layer, the first substrate having a third outer diameter larger than the second outer diameter, and having a first surface, a second surface opposite to the first surface, and a hole having a third inner diameter smaller than the above-mentioned second outer diameter, the first adhesive layer being arranged on the first surface; and a process of attaching a second adhesive tape having a second substrate and a second adhesive layer to the second surface and the metal layer via the second adhesive layer, the second substrate having a fourth outer diameter larger than the third inner diameter, and having a third surface and a fourth surface opposite to the above-mentioned third surface, the second adhesive layer being arranged on the third surface.

[0049] The point that the substrate 2 having the annular protrusion 4 is prepared is the same as the first manufacturing method. The annular protrusion 4 is provided on the outer periphery of the first substrate surface 12 and has an inner side surface 8 and a top portion 6. The inner diameter of the top portion is the fifth inner diameter ID5.

[0050] Next, the first surface 52 of the first adhesive tape 50 having an annular shape is adhered to the top portion 6 and the metal layer 20 provided on a portion of the top portion 6 via the first adhesive layer 62 ( Fig. 9 ), the annular shape has a third outer diameter OD3 that is smaller than the first outer diameter OD1 and larger than the second outer diameter OD2, and a third inner diameter ID3 that is smaller than the second outer diameter OD2 and larger than the fifth inner diameter ID5. In other words, the first surface 52 of the first adhesive tape 50 is cut into an annular shape having the third outer diameter OD3 and the third inner diameter ID3 in advance, and then adhered to the top portion 6 and the metal layer 20 provided on a portion of the top portion 6.

[0051] Next, the third surface 72 of the second adhesive tape 70 having the fourth outer diameter OD4 which is smaller than the first outer diameter OD1 and larger than the third inner diameter ID3 is attached to the second surface 54 and the metal layer 20 via the second adhesive layer 82. In other words, in the third manufacturing method, similarly to the second manufacturing method, after the second adhesive tape 70 is cut in advance to have the fourth outer diameter OD4, the third surface 72 of the second adhesive tape 70 is attached to the second surface 54 and the metal layer 20 via the second adhesive layer 82 ( Fig.10). Then, similarly to the first and second manufacturing methods, a plating layer 94 is formed on the electrode 92. Thus, the semiconductor substrate 100 of the embodiment is obtained. Furthermore, by die-cutting the semiconductor substrate 100, the semiconductor device 200 of the embodiment is obtained.

[0052] In addition, the first to third manufacturing methods described above can all be preferably used to manufacture the semiconductor device 200 of the embodiment.

[0053] Next, the effects of the structure of this embodiment on the semiconductor device 200 will be described.

[0054] When the plated layer 94 is formed on the electrode 92, it is preferable to protect the metal layer 20 so that the plating solution does not contact the metal layer 20. If the plating solution contacts the metal layer 20, part or all of the metal layer 20 disappears. As a result, poor mounting on the die pad is likely to occur due to poor quality of the electrode 92.

[0055] In order to protect the metal layer 20, it is conceivable to attach a piece of adhesive tape having an outer diameter larger than the second outer diameter OD2 so as to cover the entire surface of the metal layer 20. However, if the plating liquid penetrates from the gap between the substrate 2 and the adhesive tape, there is a problem that the plating liquid contacts the metal layer 20.

[0056] Therefore, in the method for manufacturing a semiconductor substrate of the embodiment, a first adhesive tape is used, which has a first substrate 56 and a first adhesive layer 62, and is adhered to the first substrate surface 12 and the metal layer 20 via the first adhesive layer 62, wherein the first substrate 56 has an annular shape, the annular shape has a third outer diameter OD3 that is smaller than the first outer diameter OD1 and larger than the second outer diameter OD2, and a third inner diameter ID3 that is smaller than the second outer diameter OD2, and has a first surface 52 and a first surface 52 that is adjacent to the first surface 52. 52 is opposite to the second surface 54, the first adhesive layer 62 is arranged on the first surface 52; and the second adhesive tape 70 has a second substrate 76 and a second adhesive layer 82, is connected to the second surface 54 and the metal layer 20 via the second adhesive layer 82, the second substrate 76 has a fourth outer diameter OD4 smaller than the first outer diameter OD1 and larger than the third inner diameter ID3, has a third surface 72 and a fourth surface 74 opposite to the third surface 72, and the second adhesive layer 82 is arranged on the third surface 72.

[0057] By providing the first adhesive tape 50 , the end of the metal layer 20 is covered with the first adhesive tape 50 , so that the plating liquid is less likely to contact the metal layer 20 .

[0058] In addition, when the first adhesive tape 50 is pasted over the first substrate surface 12 and the second substrate surface 14, unnecessary tension is likely to be generated on the first adhesive tape 50. However, the third outer diameter OD3 of the first adhesive tape 50 is smaller than the first outer diameter OD1. Therefore, the first adhesive tape 50 is not pasted over the first substrate surface 12 and the second substrate surface 14. Therefore, unnecessary tension is not likely to be generated on the first adhesive tape 50. Therefore, a semiconductor device with high reliability can be provided.

[0059] Preferably, the first adhesive tape 50 further includes a third adhesive layer 64 provided on the second surface 54, and the second adhesive layer 82 is adhered to the second surface 54 via the third adhesive layer 64. This is because by adhering the third adhesive layer 64 and the second adhesive layer 82 to each other, the plating liquid is more difficult to intrude into the metal layer 20.

[0060] Preferably, the fourth outer diameter OD4 of the second adhesive tape 70 is less than or equal to the third outer diameter OD3 of the first adhesive tape 50. This is because, when the fourth outer diameter OD4 is larger than the third outer diameter OD3, the second adhesive tape 70 is attached to the inside and outside of the annular shape of the first adhesive tape 50. In this case, a greater tension acts on the second adhesive tape 70, and the plating solution easily intrudes into the metal layer 20.

[0061] The semiconductor substrate 100 of the embodiment is more suitable for the following case: the substrate 2 has an annular convex portion 4, which is provided at the outer periphery of the first substrate surface 12, has an inner side surface portion 8 and a top portion 6, the inner diameter of the top portion 6 is the fifth inner diameter ID5, and the metal layer 20 is also provided over the inner side surface portion 8 and a part of the top portion 6. This is because, in the case of having the annular convex portion 4, the second adhesive tape 70 is pasted over the top portion 6, the inner side surface portion 8 and the first substrate surface 12. In this case, the tension of the second adhesive tape 70 is uneven between the top portion 6 and the inner side surface portion 8 and between the inner side surface portion 8 and the first substrate surface 12. Therefore, the second adhesive tape 70 is likely to lose its original sealing property, and the plating liquid is more likely to intrude into the metal layer 20.

[0062] In this case, the third inner diameter ID3 is preferably larger than the fifth inner diameter ID5. In other words, it is preferred that the first adhesive tape 50 is attached so as not to touch the inner side surface 8. This is because if the first adhesive tape 50 touches the inner side surface 8, a greater tension will act, and the first adhesive tape 50 will easily lose its original sealing property, and the plating liquid will more easily intrude into the metal layer 20.

[0063] In this case, it is preferable that the first adhesive layer 62 is bonded over a portion of the top portion 6 and the metal layer 20 provided on the top portion 6. This is because the metal layer 20 provided on a portion of the top portion 6 can be more reliably protected from the plating solution.

[0064] According to the semiconductor device of the embodiment, it is possible to provide a semiconductor substrate with high reliability and a method for manufacturing the semiconductor device.

[0065] Several embodiments and examples of the present invention are described above, but these embodiments and examples are provided as examples and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other forms, and various omissions, substitutions, changes, etc. can be made without departing from the scope of the invention. These embodiments and their variations are included in the scope or spirit of the invention, and are included in the invention described in the claims and the scope of their equivalents.

Claims

1. A semiconductor substrate comprising: A substrate having a substrate surface and a first outer diameter; a metal layer, disposed on the substrate surface, having a second outer diameter smaller than the first outer diameter; a first adhesive tape having a first base material and a first adhesive layer, and being adhered to the substrate surface and the metal layer via the first adhesive layer, wherein the first base material has an annular shape and has a first surface and a second surface opposite to the first surface, the annular shape having a third outer diameter smaller than the first outer diameter and larger than the second outer diameter, and a third inner diameter smaller than the second outer diameter, and the first adhesive layer is provided on the first surface; and The second adhesive tape comprises a second substrate and a second adhesive layer, and is adhered to the second surface and the metal layer via the second adhesive layer. The second substrate has a fourth outer diameter that is smaller than the first outer diameter and larger than the third inner diameter, and has a third surface and a fourth surface opposite to the third surface. The second adhesive layer is arranged on the third surface.

2. The semiconductor substrate according to claim 1, wherein The first adhesive tape further comprises a third adhesive layer disposed on the second surface; The third surface is bonded to the second surface via the third adhesive layer.

3. The semiconductor substrate according to claim 1 or 2, wherein: The substrate further has an annular convex portion, which is arranged along the outer periphery of the substrate surface, and has a top portion and an inner side portion connecting the top portion and the substrate surface, and the inner diameter of the top portion is the fifth inner diameter; The third inner diameter is larger than the fifth inner diameter; The metal layer is also disposed over a portion of the top portion and the inner side surface; The first adhesive layer is in contact with the metal layer provided on a portion of the top portion and the top portion.

4. A method for manufacturing a semiconductor device, comprising: A step of preparing a substrate, the substrate having a substrate surface and a first outer diameter, and a metal layer on the substrate surface, the metal layer having a second outer diameter smaller than the first outer diameter; A step of attaching a first adhesive tape having a first base material and a first adhesive layer to the substrate and the metal layer via the first adhesive layer, wherein the first base material has a third outer diameter larger than the second outer diameter and has a first surface and a second surface opposite to the first surface, and the first adhesive layer is provided on the first surface; a step of forming a hole having a third inner diameter smaller than the second outer diameter in the first adhesive tape so as to expose a portion of the metal layer; and A process of attaching a second adhesive tape having a second substrate and a second adhesive layer to the second surface and the metal layer via the second adhesive layer, wherein the second substrate has a fourth outer diameter larger than the third inner diameter, and has a third surface and a fourth surface opposite to the third surface, and the second adhesive layer is arranged on the third surface.

5. A method for manufacturing a semiconductor device, comprising: A step of preparing a substrate, the substrate having a substrate surface and a first outer diameter, and a metal layer on the substrate surface, the metal layer having a second outer diameter smaller than the first outer diameter; A step of attaching a first adhesive tape having a first base material and a first adhesive layer to the substrate and the metal layer via the first adhesive layer, wherein the first base material has a third outer diameter larger than the second outer diameter, and has a first surface, a second surface opposite to the first surface, and a hole having a third inner diameter smaller than the second outer diameter, and the first adhesive layer is provided on the first surface; and A process of attaching a second adhesive tape having a second substrate and a second adhesive layer to the second surface and the metal layer via the second adhesive layer, wherein the second substrate has a fourth outer diameter larger than the third inner diameter, and has a third surface and a fourth surface opposite to the third surface, and the second adhesive layer is arranged on the third surface.

6. The method for manufacturing a semiconductor device according to claim 4 or 5, wherein: The method further includes cutting the first adhesive tape so that the third outer diameter is smaller than the first outer diameter and larger than the second outer diameter.

7. The method for manufacturing a semiconductor device according to claim 4 or 5, wherein: The method further includes cutting the second adhesive tape so that the fourth outer diameter is smaller than the first outer diameter and larger than the third inner diameter.

8. The method for manufacturing a semiconductor device according to claim 4 or 5, wherein: The fourth outer diameter is smaller than the first outer diameter and larger than the third inner diameter.

9. The method for manufacturing a semiconductor device according to claim 4 or 5, wherein: The substrate further has an annular convex portion, which is arranged along the outer periphery of the substrate surface, and has a top portion and an inner side surface portion connecting the top portion and the substrate surface, and the inner diameter of the top portion is smaller than the third inner diameter; The metal layer is also disposed over the inner side portion and a portion of the top portion; The first adhesive layer is in contact with the metal layer provided on a portion of the top portion and the top portion.

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