Substrate processing monitoring

Abstract

A method for processing a substrate within a processing chamber includes receiving a first radiation signal corresponding to a film disposed on a target element within the processing chamber, analyzing the first radiation signal, and controlling processing of the substrate based on the analyzed first radiation signal. The processing chamber includes a substrate support configured to support a substrate within a processing volume, and a controller coupled to a first sensing device configured to receive the first radiation signal.

Description

Technical Field

[0001]

[0011] Embodiments of the present disclosure relate generally to monitoring a processing chamber, and particularly to a sensing device configured to monitor a film during substrate processing within a processing chamber. Background Art

[0002] Semiconductor devices are produced by forming one or more films on a substrate or etching a film formed on a substrate. However, during processing, changes in process parameters (e.g., temperature, pressure, and process gas flow) can cause changes in the thickness and / or profile of the film on the substrate. These changes can lead to one or more artifacts in the film and failures in the semiconductor device. As a result, the corresponding substrate must be discarded, resulting in reduced yield and increased manufacturing costs. Furthermore, in many processing chambers, it is not possible to monitor the thickness of the film on the substrate.

[0003] Therefore, there remains a need in the art for improved systems and methods for monitoring the thickness of a film on a substrate. Summary of the Invention

[0004] In one embodiment, a method for processing a substrate within a processing chamber includes receiving a first radiation signal corresponding to a film disposed on a target element within the processing chamber; analyzing the first radiation signal; and controlling processing of the substrate based on the analyzed first radiation signal.

[0005] In one embodiment, a processing chamber includes a substrate support, a first sensing device, and a controller. The substrate support is configured to support a substrate within a processing volume of the processing chamber. The first sensing device is configured to receive a first radiation signal corresponding to a film on a target element disposed within the processing volume while processing the substrate. The controller is configured to analyze the first radiation signal and control processing of the substrate based on the analyzed first radiation signal.

[0006] In one embodiment, a controller for a processing chamber is configured to receive a first radiation signal from a sensing device while processing a substrate. The first radiation signal corresponds to a film disposed on a target element within the processing chamber. The controller is further configured to analyze the first radiation signal and control processing of the substrate based on the analyzed first radiation signal. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] In order that the manner in which the above-described features of the present disclosure may be understood in detail, a more detailed description of the present disclosure, briefly summarized above, may be obtained by reference to the embodiments, some of which are shown in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of its scope, and may admit to other equally effective embodiments.

[0008] Figure 1 and Figure 2 is a schematic cross-sectional view of a processing chamber according to one or more embodiments.

[0009] Figure 3 A portion of a processing chamber is shown in accordance with one or more embodiments.

[0010] Figure 4 A flow chart is shown of a method of monitoring substrate processing according to one or more embodiments.

[0011] Figure 5 A flow chart is shown of a method of adjusting substrate processing according to one or more embodiments.

[0012] Figure 6 A flow chart of a method for generating a template waveform according to one or more embodiments is shown.

[0013] Figure 7 A flow chart of a method for controlling processing of a substrate is shown according to one or more embodiments.

[0014] Figure 8 Various waveforms are shown according to one or more embodiments.

[0015] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION

[0016] Semiconductor devices can be produced by forming one or more films on a substrate or etching films on a substrate. During processing, variations in process parameters (e.g., temperature, pressure, and precursor flow rates) can result in variations in film thickness and / or profile. Furthermore, any non-uniformity in the film can lead to reduced yields, thereby increasing the manufacturing cost of the semiconductor device.

[0017] Using the systems and methods discussed herein, variations in film thickness and / or variations in film profile can be mitigated. Variations in film thickness and / or profile can be mitigated, for example, by monitoring the film thickness during deposition and adjusting the process to ensure that the film thickness is within a threshold range.

[0018] Figure 1A schematic cross-sectional view of a processing chamber 100 is shown according to one embodiment. The processing chamber 100 can be used to process one or more substrates therein, including depositing materials on a substrate 140, heating the substrate 140, etching the substrate 140, or a combination thereof. The processing chamber 100 generally includes chamber walls 148 and an array of radiant heating lamps 104 for heating components such as a susceptor 110 disposed within the processing chamber 100.

[0019] As the process gas or vapor flows over the surface of the substrate 140, the radiant heating lamps 104 heat the susceptor 110 and the substrate 140, thereby facilitating the deposition of material onto the device side of the substrate 140. Figure 1 As shown, the array of radiant heat lamps 104 may be positioned below and / or above the base 110 .

[0020] The pedestal 110 includes a substrate support 115 and is positioned within the processing chamber 100 between an energy-transmitting member 108 (which may be domed or any other shape) and an energy-transmitting member 156 (which may also be domed or any other shape). The energy-transmitting members 108 and 156, along with a body 112 disposed therebetween, generally define a processing volume 111 within the processing chamber 100. The energy-transmitting member 108 and / or the energy-transmitting member 156 may be optically transparent to high-energy radiation (transmitting at least 95% of the radiation of the high-energy radiation). Furthermore, the energy-transmitting member 108 and the energy-transmitting member 156 may be made of quartz. Furthermore, an array of radiant heating lamps 104 may be disposed above the energy-transmitting member 108.

[0021] The radiant heat lamps 104 are configured to heat the substrate 140. For example, the heat lamps 104 can heat the substrate 140 to a temperature in the range of about 200 degrees Celsius to about 1,600 degrees Celsius. Each heat lamp 104 can be coupled to a power distribution board through which power is supplied to each heat lamp 104. The radiant heat lamps 104 are located within a housing that is configured to be cooled during or after processing, for example, using a cooling fluid introduced into channels located between the radiant heat lamps 104.

[0022] The substrate 140 is transferred into the process chamber 100 through a load port (not shown) formed in the body 112 and is positioned on the susceptor 110. The body 112 is provided with a process gas inlet 114 and a gas outlet 116.

[0023] A robot (not shown) enters the processing chamber 100 to engage at least the underside of the substrate 140 and remove the substrate 140 therefrom through the load port. A new substrate can then be loaded onto the lift pins 152 by the robot, and the susceptor 110 can then be actuated upward to receive the substrate 140. While the lift pins 152 are being raised and lowered, the susceptor 110 can remain stationary, allowing the lift pins 152 to engage the substrate 140. Furthermore, after a new substrate is placed on the lift pins 152, the lift pins 152 are lowered while the susceptor 110 remains stationary and engaged with the stoppers 154. The lift pins 152 can include an enlarged head to allow the lift pins 152 to hang within an opening in the susceptor 110 when in the processing position. When the susceptor 110 is in the processing position, the interior of the processing chamber 100 is divided into a process gas region above the susceptor 110 and a purge gas region below the susceptor 110.

[0024] The substrate temperature is measured by a sensor configured to measure the temperature at the bottom of the susceptor 110. The sensor may be a pyrometer (not shown) disposed in a port formed in a housing of a processing chamber (eg, processing chamber 100).

[0025] Process gas supplied from a process gas supply source 151 is introduced into the process gas region through a process gas inlet 114 formed in a sidewall of the main body 112. The process gas inlet 114 is configured to direct the process gas in a generally radially inward direction. Thus, in some embodiments, the process gas inlet 114 is a side gas injector. The side gas injector is positioned to direct the process gas across the surface of the susceptor 110 and / or substrate 140. During film formation processing for forming a film layer on the substrate 140, the susceptor 110 is positioned in a processing position adjacent to and at approximately the same height as the process gas inlet 114. Thus, the process gas generally flows over the upper surface of the susceptor 110 and / or substrate 140. The process gas exits the process gas region through a gas outlet 116 located on the opposite side of the processing chamber 100 from the process gas inlet 114. Removal of the process gas through the gas outlet 116 is facilitated by a vacuum pump 157 coupled thereto.

[0026] The processing chamber 100 described above can be controlled by a processor-based system controller, such as controller 130. For example, controller 130 is configured to control the flow of various precursors, process gases from gas sources, and purge gases during different operations of a substrate processing sequence. By way of further example, controller 130 is configured to control the ignition of spot heating modules, the supply of gases, the operation of lamps, or other processing parameters, as well as other controller operations.

[0027] The processing chamber 100 further includes a sensing device 160. The sensing device 160 can be mounted to the lid assembly 106 of the processing chamber 100. Alternatively, the sensing device 160 can be mounted to an element external to the processing chamber 100. Further, the sensing device 160 can receive sensor data corresponding to thermal radiation of a film on a target element, such as the target element 310. Figure 3 The sensing device 160 can determine a thickness of the film from the sensor data or transmit the sensor data to the controller 130 and the controller 130 determines the thickness of the film from the sensor data.

[0028] The target element can be at least a portion of the surface 143 of the susceptor 110. The target element can be any portion of the surface 143 that is not covered by the substrate 140 during processing. For example, the target element can be the surface 143 of the edge region of the susceptor 110. Alternatively, the target element can be a portion of the liner 113 of the interior surface of the processing chamber 100. Alternatively or additionally, the target element can be a processing chamber element 180. The processing chamber element 180 can be an additional element of the processing chamber 100 for a material to be deposited onto the substrate 140 or removed from the substrate 140 during processing of the substrate 140. For example, the processing chamber element 180 and a film disposed on the processing chamber element 180 can be used as a control element during processing of the substrate 140.

[0029] During deposition processing, as material is deposited onto the substrate 140 to form a film, the material is also deposited on the target element. For example, during deposition processing, as material is deposited onto the substrate 140 to form a film, the material is also deposited on the target element, such as the surface 143 of the susceptor 110, the liner 113, or the processing chamber element 180. Further, during etching processing, as material is removed from the substrate 140 to change a thickness of the film on the substrate 140, the material is also removed from the film formed on the target element. For example, during etching processing, as material is removed from the substrate 140, the material is also removed at a corresponding rate from the film formed on one of the surface 143 of the susceptor 110, the liner 113, and the processing chamber element 180. Accordingly, the thickness of the film on the target element corresponds to the thickness of the film on the substrate 140. Thus, monitoring the thickness of the film on the target element allows monitoring of the thickness of the film on the substrate 140.

[0030] The sensing device 160 includes a sensor 162, an angled mounting element 164, a mounting block 166, a mounting plate 168, and a reflector 170. The sensor 162 can be a bolometer, an emissivity sensor, or a pyrometer, among others. For example, the sensor 162 can be a bolometer and the sensor data corresponds to a thermal radiation intensity of a film deposited on a target.

[0031] Angled mounting element 164, mounting block 166, mounting plate 168, and reflector 170 may each be a separate component. Alternatively, two or more of angled mounting element 164, mounting block 166, mounting plate 168, and reflector 170 may be combined into a single component. For example, angled mounting element 164 may be part of mounting block 166. Furthermore, reflector 170 may be part of mounting plate 168. Additionally or alternatively, mounting block 166 may be part of mounting plate 168.

[0032] One or more of the angled mounting element 164, mounting block 166, mounting plate 168, and reflector 170 may be omitted. For example, the mounting block 166 may be omitted, and the angled mounting element 164 may be mounted directly to the mounting plate 168.

[0033] The sensor 162 is mounted on an angled mounting member 164 such that the sensor 162 is mounted at an angle relative to the surface of the target component. For example, the sensor 162 may be mounted at an angle of approximately 0 degrees to approximately 90 degrees relative to the target component. In other embodiments, the sensor 162 may be mounted at an angle greater than approximately 90 degrees relative to the target component.

[0034] As shown, the sensor 162 includes an optical system 171 and a detector 172. The optical system 171 may include one or more lenses that focus the energy in the radiation signal emitted by the film on the target element onto the detector 172. The detector 172 is sensitive to radiation and generates sensor data corresponding to the radiation in the thermal radiation signal. The radiation signal may be a thermal radiation signal. Alternatively, other detectors may detect other types of radiation signals. The detector 172 may respond to light of various wavelengths. For example, in an infrared embodiment, the detector 172 may respond to energy radiated from the target element in a wavelength range of about 700 nm to about 5000 nm. Alternatively, the detector 172 may respond to energy radiated from the target element at a wavelength less than about 700 nm or greater than about 5000 nm.

[0035] The sensor data generated by the detector 172 may be proportional to the amount of energy radiated by the target element. The sensor data may be processed to determine or infer the temperature of the target element.

[0036] The mounting plate 168 may be used to mount the sensing device 160 to the lid assembly 106 or another component so that the sensing device 160 can receive radiation signals from target components within the processing chamber 100. The reflector 170 includes a reflective interior surface and directs the radiation signals onto the sensor 162. As described above, the reflector 170 may be part of the mounting plate 168.

[0037] A controller 130 is coupled to the processing chamber 100. The controller 130 includes a central processing unit (CPU) 132, a memory 134, and supporting circuits. In addition, the controller 130 may be part of a server and located remotely from the processing chamber 100. For example, the controller 130 may be part of a server connected to the processing chamber 100 via a wide area network (WAN) or a local area network (LAN).

[0038] The controller 130 is used to control the operation of the processing chamber 100. For example, the controller 130 can control the operation of the gas supply source 151, the vacuum pump 157, and the heating lamps 104.

[0039] The CPU 132 may be any form of general-purpose computer processor that can be used in an industrial environment. The software routines may be stored in a memory 134, such as a random access memory, read-only memory, a floppy disk or hard drive, or other form of digital storage. Support circuits are coupled to the CPU 132 and may include cache memory, clock circuits, input / output subsystems, power supplies, and the like. When executed by the CPU 132, the software routines transform the CPU 132 into a dedicated computer (controller) 130 that controls the processing chamber 100 so that processing according to the present disclosure is performed. The software routines may also be stored and / or executed by a second controller (not shown) located remotely from the chamber.

[0040] Figure 2 A schematic cross-sectional view of a processing chamber 200 according to one or more embodiments is shown. The configuration of processing chamber 200 is similar to that of processing chamber 100. However, processing chamber 200 includes two sensing devices (e.g., sensing device 160 and sensing device 260). The configuration of sensing device 260 is similar to that of sensing device 160. For example, the sensing device includes a sensor 262, an angled mounting element 264, a mounting block 266, a mounting plate 268, and a reflector 270. Sensor 262 may be a radiation thermometer, an emissivity sensor, or a pyrometer, among others. The sensor may include an optical system 271 and a detector 272. In addition, sensor 262 and sensor 162 may be of the same type or of different types. For example, sensors 162 and 262 may be radiation thermometers. Alternatively, sensor 162 may be a radiation thermometer, and sensor 262 may be an emissivity sensor.

[0041] Sensor 162 is mounted at a first angle, and sensor 262 is mounted at a second angle. The first angle may be greater than, less than, or equal to the second angle. Furthermore, sensor 162 may receive a radiation signal that can be used to measure thermal radiation from a first target element, and sensor 262 may measure thermal radiation from a second target element different from the first target element. For example, sensor 162 may receive a radiation signal that can be used to measure thermal radiation from a film on surface 143 of susceptor 110, and sensor 262 may receive a radiation signal that can be used to measure thermal radiation from a film on lining 113 of chamber wall 148. Alternatively, both sensor 162 and sensor 262 may receive a radiation signal that can be used to measure thermal radiation from a first target element. For example, both sensor 162 and sensor 262 may receive a radiation signal that can be used to measure thermal radiation from surface 143 of susceptor 110.

[0042] Figure 3 A portion of a processing chamber (e.g., processing chamber 100 or 200) according to one or more embodiments is shown. For example, as shown, sensing device 160 receives radiation signal 318 from a film deposited on target element 310. Target element 310 can be one of surface 143 of susceptor 110, liner 113, and / or processing chamber components 180. Alternatively, target element 310 can be an inner surface of a chamber wall of the processing chamber, a showerhead of the processing chamber, or a substrate support ring of the processing chamber. Furthermore, target element 310 can be an element other than a substrate within processing volume 111, on which a film can be deposited or etched.

[0043] Radiated signal 318 received by sensing device 160 may be at angle 316. Radiated signal 318 may be a thermal radiation signal. Angle 316 may be between approximately 0 degrees and approximately 90 degrees relative to line 320 perpendicular to surface 315 of target element 310. Alternatively, angles greater than approximately 90 degrees relative to line 320 may be utilized.

[0044] Figure 44 is a flow chart illustrating a method 400 for measuring the thickness of a film according to one or more embodiments. At operation 410, a first radiation signal is received from a target element. For example, the first radiation signal may be received by sensing device 160 from target element 310. The first radiation signal includes sensor data corresponding to a first state of surface 315 of target element 310 or a film 314 deposited on surface 315 of target element 310. For example, the first state of surface 315 of target element 310 occurs before film deposition occurs and when no film is present on surface 315. Furthermore, the first state of film 314 may correspond to a first period of film 314 deposition onto surface 315 or a first period of etching of film 314. For example, the state of film 314 may correspond to a state of film 314 after at least a portion of the first film has been deposited onto or removed from surface 315. The thickness of film 314 may be similar to the thickness of film 312 formed on substrate 140. Thus, monitoring the thickness of film 314 allows monitoring of film 312 disposed on substrate 140.

[0045] At operation 420, the first radiation signal is analyzed. Analyzing the first radiation signal includes operation 422, determining a first measurement. For example, a first measurement of the film 314 or surface 315 can be determined from the sensor data of the first radiation signal. Sensing device 160 can process the sensed data of the first radiation signal to determine the first measurement. Alternatively, sensing device 160 can transmit the sensed data of the first radiation signal to controller 130, and controller 130 can process the sensed data to determine the first measurement.

[0046] At operation 430, a second radiation signal is received from the target element. For example, the second radiation signal is received from target element 310. The second radiation signal may correspond to an increase in the thickness of the film or a decrease in the thickness of the film. The second radiation signal includes sensor data corresponding to a second state of film 314 on surface 315 of target element 310. For example, the second state of film 314 may correspond to a second period during deposition of film 314 onto surface 315 or a second period during etching of film 314. For example, the second state of film 314 may correspond to a state of film 314 when the thickness of film 314 increases or decreases.

[0047] At operation 440, a second measurement is determined. For example, a second measurement of the film 314 can be determined from the sensor data of the second radiation signal. The sensing device 160 can process the sensed data of the second radiation signal to determine the second measurement. Alternatively, the sensing device 160 can transmit the sensed data of the second radiation signal to the controller 130, and the controller 130 can process the sensed data of the second radiation signal to determine the second measurement.

[0048] At operation 450, a thickness measurement of the film is determined. For example, a thickness measurement of film 314 may be determined. The thickness measurement may indicate a change in the thickness of the film. Alternatively, the thickness measurement may indicate a thickness measurement at a specific time during a deposition process or an etching process. The thickness measurement of film 314 may be determined by comparing a first measurement with a second measurement. Sensing device 160 may compare the first measurement with the second measurement to determine the thickness measurement of film 314. Alternatively, controller 130 may compare the first measurement with the second measurement to determine the thickness measurement of film 314.

[0049] After operation 450, the method of receiving the radiation signal, determining the corresponding measurement, and determining the corresponding thickness measurement of the film (e.g., film 314) can be repeated to allow for continuous or semi-continuous monitoring of the thickness of the film. For example, the method of receiving the radiation signal, determining the corresponding measurement, and determining the corresponding thickness measurement of the film can be repeated to allow for continuous or semi-continuous monitoring of the thickness of the film as the thickness of the film increases in response to a deposition process. Alternatively, the method of receiving the radiation signal, determining the corresponding measurement, and determining the corresponding thickness measurement of the film can be repeated to allow for continuous or semi-continuous monitoring of the thickness of the film as the thickness of the film decreases in response to an etching process.

[0050] Figure 5 A flow chart of a method 500 for monitoring substrate processing within a processing chamber is shown. At operation 510, a thickness measurement of a film is compared to one or more threshold values. For example, the thickness determined at operation 430 of film 314 may be compared to one or more threshold values. The one or more threshold values ​​may include an upper threshold value and a lower threshold value. The threshold values ​​may correspond to processing parameters used to process the substrate. The upper threshold value may correspond to a maximum tolerance for film thickness or thickness variation during a particular cycle during substrate processing, while the lower threshold value may correspond to a minimum tolerance for film thickness or thickness variation during a particular cycle during substrate processing. Furthermore, different threshold values ​​may be used for different cycles during processing of the substrate. Additionally or alternatively, different threshold values ​​may be used depending on the type of material being deposited or etched and / or the processing technology being utilized. Furthermore, the controller 130 may compare the thickness measurement of film 314 to the threshold values.

[0051] At operation 520, a determination is made to change one or more process parameters based on the comparison of the film thickness to one or more threshold values. For example, a determination may be made to increase or decrease one or more of process temperature, process pressure, type of process gas, amount of process gas, and process (e.g., deposition or etching) time based on the comparison of the film thickness to one or more threshold values. The controller 130 may determine to increase or decrease one or more of process temperature, process pressure, amount of process gas, and process time in response to the film thickness measurement being less than a lower threshold value or greater than an upper threshold value.

[0052] At operation 530, the changed processing parameter is communicated to the processing chamber. For example, the controller 130 can instruct the processing chamber 100 to increase or decrease one or more of a processing temperature, a processing pressure, an amount of a processing gas, a processing time, and / or a type of processing gas while processing the substrate 140 based on the determination in operation 520.

[0053] Alternatively, the controller 130 can instruct the processing chamber 100 to increase or decrease one or more of a temperature, a processing pressure, an amount of a processing gas, and a processing time, and / or a type of processing gas for processing a next substrate. For example, the controller 130 can instruct the processing chamber 100 to increase or decrease one or more of a temperature, a processing pressure, an amount of a processing gas, and a processing time, and / or a type of processing gas for processing an additional substrate such that the film thickness is adjusted to or corresponds to the reference thickness value.

[0054] The reference thickness value can be simulated by modeling the deposition or etching process. Further, the reference thickness value can be determined by taking a thickness measurement of one or more films during a baseline substrate processing cycle. The baseline substrate processing cycle can be a processing cycle known to produce a film free of artifacts. Alternatively, the reference thickness value can be determined by averaging film thicknesses of films of two or more substrates.

[0055] Figure 6 A flowchart of a method 600 for generating a template waveform is shown in accordance with one or more embodiments. At operation 610, a radiation signal is received from a target element while processing a substrate (e.g., the substrate 140). The substrate 140 can be one of a plurality of substrates processed in a batch. Each substrate in the batch is assigned a batch number based on a time at which the substrate is processed within the batch. For example, a substrate with a batch number of 1 is the first substrate processed after a cleaning cycle, while a substrate with a batch number of N (where N is 2 or greater) can be the last substrate processed in the batch and before completion of the cleaning cycle.

[0056] The radiation signal is received by the sensing device 160 from the target element 310. The radiation signal includes sensor data corresponding to changes in thickness of a film deposited onto (or removed from) the surface 315 of the target element 310. The radiation signal is received while the substrate 140 is being processed such that the radiation signal is received from a beginning to an end of processing the substrate 140.

[0057] At operation 620, the radiation signal is analyzed. For example, the radiation signal is analyzed to generate a corresponding signal waveform. Generating the signal waveform may include one or more of: collecting one or more data points from the received radiation signal, fitting an algebraic function (e.g., spline regression, stepwise regression, smoothing regression, or non-parametric regression) to the data points, determining an area under the radiation signal, defining an increment for each substrate from the beginning to the end of substrate processing, and determining a local extrema of the radiation signal. As the thickness of the film on the target element 310 changes over time, the generated signal waveform has a changing shape corresponding to the change in the thickness of the film.

[0058] The signal waveform is stored as a template waveform in a memory (e.g., memory 134). The template waveform can be associated with an identifier in memory 134. The identifier associates the template waveform with a substrate batch number. For example, a template waveform generated when processing the first substrate of a batch (e.g., batch number 1) is associated with batch number 1.

[0059] At operation 630, a determination is made as to whether there are no additional substrates from the batch to be processed. For example, a batch of N substrates is processed before the cleaning process of the processing chamber 100 is completed. N is 2 or greater. If the batch number of the substrate that has just been processed is less than N, operation 610 is completed for the next substrate, and a signal waveform is generated and stored as a template waveform for the next substrate. The template waveform is stored along with the corresponding batch number. If the number of substrates that have just been processed is equal to N, the generation of the template waveform is terminated (operation 640). In one embodiment, method 600 includes the step of incrementing a counter before receiving a subsequent radiation signal.

[0060] Operations 610 and 620 are repeated so that a corresponding waveform template is generated for each substrate. Figure 8 An example template waveform is shown. For example, Figure 8 As shown, template waveforms 810-816 correspond to substrates from batches 1 to 4, respectively. Template waveform 810 corresponds to substrate from batch 1, template waveform 812 corresponds to substrate from batch 2, template waveform 814 corresponds to substrate from batch 3, and template waveform 816 corresponds to substrate from batch 4.

[0061] The method 600 may be initiated in response to a change in a process recipe and / or a change in a portion of a process chamber to generate a new template waveform. For example, the method 600 may be completed in response to the susceptor 110 being replaced.

[0062] Figure 7A flow chart of a method 700 for controlling the processing of one or more substrates according to one or more embodiments is shown. At operation 710, a radiation signal is received from a target element while processing a substrate. The first time operation 710 is completed, i=1, where "i" is the substrate batch number. The radiation signal is received from the target element 310 by the sensing device 160. The radiation signal contains sensor data corresponding to a change in the thickness of a film deposited on (or removed from) the surface 315 of the target element 310.

[0063] As described with respect to operation 620, the radiation signal is analyzed to generate a signal waveform. Figure 8 Example signal waveforms (eg, signal waveforms 820 - 826 ) are shown in . Each of the signal waveforms 820 - 826 corresponds to a different substrate being processed within the processing chamber 100 .

[0064] At operation 720, the radiation signal is analyzed. For example, operation 720 includes operation 722, comparing the radiation signal to a template signal. Comparing the radiation signal to the template signal includes comparing a signal waveform generated from the radiation signal to a corresponding template signal. The substrates may be processed in batches, and each substrate in the batch is assigned an associated batch number. The substrate with batch number 1 is the first substrate processed after a cleaning cycle, and the substrate with batch number N (where N is 2 or greater) may be the last substrate processed in the batch and before the cleaning cycle is completed. The signal waveform of the substrate with batch number 1 is compared to the template waveform associated with batch number 1. Additionally, the signal waveform of the substrate with batch number N is compared to the template waveform associated with batch number N. Thus, the signal waveform of each substrate is compared to a template waveform having the same batch number. Reference Figure 8 , the signal waveform 820 is compared with the template waveform 810.

[0065] At operation 730, substrate processing is controlled. Substrate processing is controlled based on a comparison of the radiation signal with the template signal. For example, comparing the radiation signal with the template signal can identify when to stop processing a substrate so that processing results for substrates with the same batch number are consistent between batches. For example, since the template waveform corresponds to the start and end points of processing of the corresponding substrate, when the shape of the radiation signal (or the signal waveform generated from the radiation signal) matches the end point shape of the template waveform, an instruction to stop processing the substrate is given. For example, as Figure 8As shown, the shape of signal waveform 820 is similar to the shape of template waveform 810. By comparing signal waveform 820 with template waveform 810, when signal waveform 820 reaches point 820a, which is associated with point 810a indicating the end of processing of the substrate corresponding to template waveform 810, processing of the substrate corresponding to signal waveform 820 is stopped. Therefore, processing uniformity can be improved between substrate batches because each substrate within a batch can be processed for a different time within the batch, but substrates within a common substrate batch number are processed at the same time between batches.

[0066] Furthermore, the control substrate processing can identify when to initiate a cleaning process for the processing chamber. For example, if the radiation signal and the template signal differ by more than a threshold amount, the cleaning process is initiated. The threshold value is approximately 5%. Alternatively, the threshold value can be less than or greater than 5%. Additionally or alternatively, the control substrate processing can identify when a portion of the processing chamber should be replaced. For example, if the radiation signal and the template signal differ by more than a threshold amount, a determination is made that a portion of the processing chamber 100 is in place. In one embodiment, the susceptor 110 can be identified as having a fault and should be replaced. Alternatively, in other embodiments, other portions of the processing chamber 100 are identified as ready for replacement.

[0067] At operation 740, a determination is made as to whether there are additional substrates in the batch to be processed. For example, if the current batch number is less than N, where N is the last substrate in the batch, the batch number is incremented and operations 710-730 are repeated. If the current batch number is equal to N, the batch number is reset to 1 and operations 710-730 are repeated. This ensures that the received radiation signal is correlated with the current template waveform and that the processing of the substrate is properly controlled.

[0068] In various embodiments, the operations of methods 400 and / or 500 are combined with the operations of methods 600 and 700. For example, observing the thickness of the deposited film and changing the processing parameters of method 500 (operation Figure 5 510 - 530 ) may be combined with the process of comparing the radiation signal to the template signal to control substrate processing of method 700 (operations 710 - 760 ).

[0069] Thus, using the systems and methods discussed herein, the uniformity of one or more films produced on a substrate can be improved by monitoring the deposition or etching of the film, thereby increasing the yield of corresponding semiconductor devices and reducing manufacturing costs.

[0070] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope of the disclosure is determined by the claims that follow.

Claims

1. A method for processing a substrate in a processing chamber, the method comprising the following steps: receiving a first radiation signal corresponding to a first film on a target element disposed within the processing chamber while processing the substrate, wherein the target element is different from the substrate; while processing the substrate, determining a thickness of a second film on the substrate by analyzing the first radiation signal; and The processing of the substrate is controlled based on the analyzed first radiation signal.

2. The method of claim 1, further comprising the steps of: receiving a second radiation signal corresponding to the first film on the target element within the processing chamber, wherein analyzing the first radiation signal comprises the following steps: determining a thickness measurement of the first film based on the first radiation signal and the second radiation signal, and wherein controlling the processing of the substrate comprises the steps of: One or more processing parameters are adjusted based on the thickness measurement of the first film.

3. The method of claim 2, further comprising the steps of: determining a first measurement based on the first radiation signal; and A second measurement is determined based on the second radiation signal, wherein determining the thickness measurement of the first film is further based on a comparison of the first measurement and the second measurement.

4. The method of claim 2 , further comprising the step of comparing the thickness measurement of the first film to one or more threshold values, and wherein adjusting the one or more processing parameters comprises the step of adjusting the one or more processing parameters based on the comparison of the thickness measurement of the first film to the one or more threshold values.

5. The method of claim 2, wherein the one or more process parameters include one or more of a process temperature, a process pressure, an amount of a process gas, a type of a process gas, or a process time.

6. The method of claim 1, wherein analyzing the first radiation signal comprises comparing the first radiation signal to a template waveform, and wherein the template waveform corresponds to a second radiation signal.

7. The method of claim 6, wherein controlling processing of the substrate comprises stopping processing of the substrate based on the comparison of the first radiation signal to the template waveform.

8. A processing chamber comprising: a substrate support configured to support a substrate within a processing volume of the processing chamber; a first sensing device configured to receive a first radiation signal corresponding to a first film on a target element disposed within the processing space while processing the substrate, wherein the target element is different from the substrate; and The controller is configured as follows: determining a thickness of a second film on the substrate by analyzing the first radiation signal during the processing of the substrate; and The processing of the substrate is controlled based on the analyzed first radiation signal.

9. The processing chamber of claim 8 , wherein the first sensing device is further configured to receive a second radiation signal corresponding to the first film on the target element while processing the substrate, wherein the controller is further configured to determine a thickness measurement of the first film based on the first radiation signal and the second radiation signal, and wherein controlling the processing of the substrate includes adjusting one or more processing parameters based on the thickness measurement of the first film.

10. The processing chamber of claim 9, wherein the controller is further configured to: determining a first measurement based on the first radiation signal; and A second measurement is determined based on the second radiation signal, wherein determining the thickness measurement of the first film is further based on a comparison of the first measurement and the second measurement.

11. The processing chamber of claim 9 , wherein the controller is further configured to compare the thickness measurement of the first film to one or more threshold values, and wherein adjusting the one or more processing parameters comprises adjusting the one or more processing parameters based on the comparison of the thickness measurement of the first film to the one or more threshold values.

12. The processing chamber of claim 9, wherein the one or more processing parameters include one or more of a process temperature, a process pressure, an amount of a process gas, a type of a process gas, or a process time.

13. The processing chamber of claim 8, wherein analyzing the first radiation signal comprises comparing the first radiation signal to a template waveform, and wherein the template waveform corresponds to a second radiation signal.

14. The processing chamber of claim 13, wherein controlling processing of the substrate comprises stopping processing of the substrate based on the comparison of the first radiation signal to the template waveform.

15. The processing chamber of claim 8, further comprising a lid, and wherein the first sensing device is mounted to the lid.

16. The processing chamber of claim 8, wherein the target component is one of a portion of a surface of the substrate support, a portion of a liner of the processing chamber, or a processing chamber component.

17. The processing chamber of claim 8, wherein the first sensing device is one of a radiation thermometer, an emissivity sensor, or a pyrometer.

18. A controller for a processing chamber, the controller being configured to: receiving, by a sensing device, a first radiation signal while processing a substrate, the first radiation signal corresponding to a first film disposed on a target element within the processing chamber, wherein the target element is different from the substrate; determining a thickness of a second film on the substrate by analyzing the first radiation signal during the processing of the substrate; and The processing of the substrate is controlled based on the analyzed first radiation signal.

19. The controller of claim 18, wherein the controller is further configured to receive a second radiation signal corresponding to the first film on the target element within the process chamber, wherein analyzing the first radiation signal comprises: determining a thickness measurement of the first film based on the first radiation signal and the second radiation signal, and wherein controlling the processing of the substrate comprises: One or more processing parameters are adjusted based on the thickness measurement of the first film.

20. The controller of claim 18, wherein analyzing the first radiation signal comprises comparing the first radiation signal to a template waveform, and wherein the template waveform corresponds to a second radiation signal, and wherein controlling processing of the substrate comprises stopping processing of the substrate based on the comparison of the first radiation signal to the template waveform.

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