Method for forming oxide layer and semiconductor structure

Abstract

The present invention proposes a method for forming an oxide layer and a semiconductor structure, wherein the method for forming an oxide layer comprises the following steps: providing a substrate; forming an oxide film structure, introducing hydrogen and oxygen into a reaction environment, and forming an oxide film structure on the surface of the substrate; annealing, introducing a compensating gas into the reaction environment, and performing a pulse annealing treatment on the oxide film structure to form an oxide film; repeating at least two cycles including the above steps, forming at least two layers of oxide films stacked on the surface of the substrate, thereby forming an oxide layer. The present invention adopts a compensating gas for pulse annealing treatment, which can reduce the unstable Si-H bonds and Si-OH bonds present in silicon dioxide. The present invention adopts multiple cycles to alternately form and anneal the oxide film structure, thereby extending the annealing treatment stage using the compensating gas, thereby providing more sufficient time and heat energy for the self-healing of surface defects of the semiconductor structure substrate.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing process, and in particular to a method for forming an oxide layer and a semiconductor structure. Background Art

[0002] In the In-Situ Steam Generation (ISSG) process, a large number of gas-phase activated free radicals are generated under a low-pressure and high-temperature processing environment. The gas-phase activated free radicals mainly include oxygen atoms, oxygen free radicals, hydroxyl groups, water molecules, etc. When these activated free radicals undergo oxidation reactions with the silicon (Si) of the substrate of the semiconductor structure, a small amount of Si-H bonds and Si-OH bonds are generated. Due to the poor stability of Si-H bonds and Si-OH bonds, impurity defects will be generated in the oxide layer (such as the gate oxide film). Furthermore, since the oxygen atoms of the activated free radicals react quickly at the interface between silicon and silicon dioxide, a part of the generated silicon dioxide has reacted before it is regularly arranged, so it is easy to form gaps at the above-mentioned interface, which also brings defects to the oxide layer. Summary of the invention

[0003] A main object of the present invention is to overcome at least one of the defects of the prior art mentioned above and to provide a method for forming an oxide layer capable of improving the generation of impurities and void defects in the oxide layer.

[0004] Another main object of the present invention is to overcome at least one of the above-mentioned defects of the prior art and provide a semiconductor structure.

[0005] To achieve the above object, the present invention adopts the following technical solution:

[0006] According to one aspect of the present invention, a method for forming an oxide layer is provided, wherein the method comprises the following steps:

[0007] providing a substrate;

[0008] Forming an oxide film structure, introducing hydrogen and oxygen into the reaction environment to form an oxide film structure on the surface of the substrate;

[0009] Annealing treatment, introducing a compensating gas into the reaction environment, and performing a pulse annealing treatment on the oxide film structure to form an oxide layer film;

[0010] Repeat at least two cycles including the above steps to form at least two stacked oxide layer films on the surface of the substrate, thereby forming an oxide layer.

[0011] According to one embodiment of the present invention, during the annealing stage, oxygen is introduced into the reaction environment, and the inertness of the compensation gas is higher than that of oxygen.

[0012] According to one embodiment of the present invention, the introduction of oxygen during the formation of the oxide film structure and the introduction of oxygen during the annealing treatment are continuous processes of introducing oxygen.

[0013] According to one embodiment of the present invention, in at least one cycle, the following steps are further included:

[0014] After the oxide film structure is formed, the reaction environment is evacuated.

[0015] According to one embodiment of the present invention, in the step of forming the oxide film structure, when hydrogen and oxygen are introduced into the reaction environment, the following steps are included:

[0016] introducing hydrogen into the reaction environment;

[0017] During the process of introducing hydrogen, oxygen was introduced into the reaction environment.

[0018] According to one embodiment of the present invention, in the annealing step, the ratio of the introduced oxygen to the compensation gas is 2:100 to 15:100.

[0019] According to one embodiment of the present invention, the annealing treatment has a processing time of 2s to 60s; and / or a processing temperature of annealing treatment is 600°C to 1200°C.

[0020] According to one embodiment of the present invention, in the same cycle, the processing temperature of the step of forming the oxide film structure is the same as the processing temperature of the step of annealing.

[0021] According to one embodiment of the present invention, the compensation gas contains helium or nitrogen.

[0022] According to another aspect of the present invention, a semiconductor structure is provided; wherein an oxide layer is formed on the surface of a substrate of the semiconductor structure by the oxide layer forming method proposed by the present invention and described in the above-mentioned embodiment.

[0023] It can be seen from the above technical solutions that the advantages and positive effects of the oxide layer forming method and semiconductor structure proposed in the present invention are:

[0024] The oxide layer formation method proposed by the present invention uses a compensating gas for pulsed annealing treatment, which can reduce the unstable Si-H bonds and Si-OH bonds in silicon dioxide. In addition, the present invention uses multiple cycles to alternately form and anneal the oxide film structure, prolonging the annealing treatment stage using the compensating gas, thereby providing more sufficient time and heat energy for the self-healing of the surface defects of the semiconductor structure substrate, significantly reducing the defects on the surface and interface of the substrate, and greatly improving the product yield of the semiconductor structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Various objects, features and advantages of the present invention will become more apparent by considering the following detailed description of preferred embodiments of the present invention in conjunction with the accompanying drawings. The accompanying drawings are merely exemplary illustrations of the present invention and are not necessarily drawn to scale. In the accompanying drawings, the same reference numerals always refer to the same or similar parts. Among them:

[0026] Figure 1 is a process schematic diagram of one step of a method for forming an oxide layer according to an exemplary embodiment;

[0027] Figure 2 is through Figure 1 A schematic diagram of the structure of a semiconductor structure after being processed by the process steps shown;

[0028] Figure 3 is a process schematic diagram of another step of a method for forming an oxide layer according to an exemplary embodiment;

[0029] Figure 4 is through Figure 3 A schematic diagram of the structure of a semiconductor structure after being processed by the process steps shown;

[0030] Figure 5 is a process timing diagram regarding the introduction state of each gas in a method for forming an oxide layer according to an exemplary embodiment;

[0031] Figure 6 is a process timing diagram regarding the introduction state of each gas in a method for forming an oxide layer according to another exemplary embodiment;

[0032] Figure 7 is a process timing diagram regarding the introduction state of each gas in a method for forming an oxide layer according to another exemplary embodiment.

[0033] The following are the descriptions of the reference numerals:

[0034] 100. Base;

[0035] 200. Oxide film structure;

[0036] 201. Oxide film;

[0037] 210. Gap;

[0038] 220.Si-H bond and Si-OH bond;

[0039] 300. Oxide layer. DETAILED DESCRIPTION

[0040] Typical embodiments that embody the features and advantages of the present invention will be described in detail in the following description. It should be understood that the present invention can have various changes in different embodiments without departing from the scope of the present invention, and the descriptions and drawings therein are essentially for illustrative purposes rather than for limiting the present invention.

[0041] In the following description of different exemplary embodiments of the present invention, reference is made to the accompanying drawings, which form a part of the present invention and in which different exemplary structures, systems and steps that can implement multiple aspects of the present invention are shown by way of example. It should be understood that other specific schemes of components, structures, exemplary devices, systems and steps can be used, and structural and functional modifications can be made without departing from the scope of the present invention. Moreover, although the terms "above", "between", "within", etc. may be used in this specification to describe different exemplary features and elements of the present invention, these terms are used herein only for convenience, such as according to the direction of the examples described in the accompanying drawings. Nothing in this specification should be construed as requiring a specific three-dimensional orientation of the structure to fall within the scope of the present invention.

[0042] See also Figure 1 , which representatively shows a process schematic diagram of one step of the method for forming an oxide layer proposed in the present invention. In this exemplary embodiment, the method for forming an oxide layer proposed in the present invention is described by taking the construction process applied to a semiconductor memory device, especially to a memory component device as an example. It is easy for those skilled in the art to understand that in order to apply the relevant design of the present invention to other types of semiconductor structures, various modifications, additions, substitutions, deletions or other changes are made to the specific embodiments described below, and these changes are still within the scope of the principle of the method for forming an oxide layer proposed in the present invention.

[0043] Related References Figures 2 to 7 , Figure 2 The representative example is shown in Figure 1 A schematic diagram of the structure of a semiconductor structure after being processed by the process steps shown; Figure 3 A process schematic diagram in another step is representatively shown in FIG. Figure 4 The representative example is shown in Figure 3 A schematic diagram of the structure of a semiconductor structure after being processed by the process steps shown; Figures 5 to 7The process timing diagrams of the gas introduction states in multiple embodiments are respectively representatively shown. The process method, parameters and sequence of each main step of the method for forming the oxide layer proposed by the present invention will be described in detail below in conjunction with the above drawings.

[0044] like Figures 1 to 4 As shown, in this embodiment, the method for forming an oxide layer provided by the present invention can be used to form an oxide layer 300 on a substrate 100 of a semiconductor structure. The substrate 100 of the semiconductor structure can be a silicon substrate 100, and the material of the oxide layer 300 can include silicon dioxide (SiO 2 ), such as the gate oxide film of a semiconductor storage device. Specifically, the method for forming the oxide layer proposed by the present invention mainly comprises the following steps:

[0045] Providing a substrate 100;

[0046] To form an oxide film structure 200, hydrogen (H 2 ) and introduce oxygen (O 2 ), forming an oxide film structure 200 on the surface of the substrate 100;

[0047] Annealing treatment, introducing a compensation gas into the reaction environment, and performing a pulse annealing treatment on the oxide film structure 200 to form an oxide layer film 201;

[0048] Repeat at least two cycles including the above steps to form at least two stacked oxide layer films 201 on the surface of the substrate 100 , thereby forming an oxide layer 300 .

[0049] As mentioned above, the oxide layer formation method proposed in the present invention uses a compensating gas for pulsed annealing treatment, which can reduce the unstable Si-H bonds and Si-OH bonds 220 in silicon dioxide. In addition, the present invention uses multiple cycles to alternately form and anneal the oxide film structure 200, which prolongs the annealing stage using the compensating gas, thereby providing more sufficient time and heat energy for the self-healing of the surface defects of the semiconductor structure substrate 100, significantly reducing the defects on the surface and interface of the substrate 100, and greatly improving the product yield of the semiconductor structure.

[0050] It should be noted that in this embodiment, the method for forming an oxide layer includes two of the above process cycles. In other embodiments, the method for forming an oxide layer may also include three or more of the above process cycles. In addition, the reaction environment mentioned in this specification can be understood as the process environment in which the semiconductor structure is placed and the oxide layer 300 is formed, such as a reaction chamber such as a furnace tube. In this embodiment, the environmental conditions of the reaction environment can be, for example, a low-pressure and high-temperature environment.

[0051] See also Figure 1 As shown, in this embodiment, for the step of "forming an oxide film structure 200", oxygen and hydrogen are introduced into the reaction environment so that a small amount of oxide is formed on the surface of the substrate 100 of the semiconductor structure, thereby forming an oxide film structure 200. The so-called "small amount" described above can be understood as that, compared with the existing process of "introducing oxygen and hydrogen to generate the required oxide layer 300 at one time", the oxide formed in the above steps of the present invention is less, that is, the thickness of the oxide film structure 200 is thinner. Accordingly, the present invention can control the thickness of the oxide film structure 200 formed in each process cycle, so as to realize the formation of the required oxide film through multiple process cycles.

[0052] Optionally, in this embodiment, for the step of “forming the oxide film structure 200”, the introduction of oxygen and hydrogen is carried out by opening them simultaneously (eg Figure 5 and Figure 7 In other embodiments, for the step of “forming an oxide film structure 200”, the oxygen and hydrogen may be introduced at different times, for example, the oxygen may be introduced first, and then the hydrogen may be introduced after a preset time interval, or the hydrogen may be introduced first, and then the oxygen may be introduced after a preset time interval (e.g. Figure 6 ), but is not limited to this implementation manner.

[0053] Optionally, in this embodiment, for the step of "forming the oxide film structure 200", the introduction of oxygen and hydrogen is closed at the same time (eg Figure 5 and Figure 7 In other embodiments, for the step of "forming an oxide film structure 200", the introduction of oxygen and hydrogen may not be turned off at the same time, for example, the oxygen may be turned off first, and then the hydrogen may be turned off after a preset time, or the hydrogen may be turned off first, and then the oxygen may be turned off after a preset time (e.g. Figure 7 ), but is not limited to this implementation manner.

[0054] It should be noted that, for the step of “forming the oxide film structure 200”, the introduction of oxygen and hydrogen must overlap, that is, there must be a stage where oxygen and hydrogen are introduced simultaneously to form the oxide film structure 200. In addition, the timing state of each step in each process cycle of this embodiment can be referred to in conjunction with Figure 5 Shows the timing status of each step in a single process cycle.

[0055] Optionally, in this embodiment, for the step of “forming the oxide film structure 200 ”, the flow rate of oxygen gas when introduced may be greater than the flow rate of hydrogen gas when introduced.

[0056] See also Figure 2 , which representatively shows an exemplary structure of the substrate 100 of the semiconductor structure after the above-mentioned step of "forming an oxide film structure 200". Specifically, a layer of oxide film structure 200 is formed on the substrate 100 in this step, and the oxide film structure 200 has gaps 210 and Si-H bonds and Si-OH bonds 220.

[0057] In this embodiment, for the "annealing treatment" step, oxygen can be further introduced into the reaction environment on the basis of introducing a compensating gas, thereby optimizing the annealing effect on the oxide film structure 200, increasing the overflow of the voids 210 and the breaking probability of the Si-H bonds and Si-OH bonds 220, further reducing the defects of the oxide layer film 201 formed by annealing, and on this basis, the annealing treatment time can also be reduced.

[0058] See also Figure 3 As shown, in this embodiment, for the "annealing treatment" step, a compensating gas is introduced into the reaction environment, and oxygen is introduced again, thereby performing pulse annealing on the formed oxide film structure 200, so that at least a portion of the gaps 210 in the oxide film structure 200 overflows, and at least a portion of the Si-H bonds and Si-OH bonds 220 are broken, thereby forming an oxide layer film 201.

[0059] Optionally, in this embodiment, for the step of "annealing treatment", the introduction of oxygen and compensation gas is carried out in a simultaneous opening manner (such as Figure 5 and Figure 6 In other embodiments, for the step of "annealing treatment", the introduction of oxygen and compensation gas may not be turned on at the same time, for example, oxygen may be turned on first, and then the compensation gas may be turned on after a preset time, or the compensation gas may be turned on first, and then the oxygen may be turned on after a preset time, but this is not limited to the present embodiment.

[0060] Optionally, in this embodiment, for the step of "annealing treatment", the introduction of oxygen and compensation gas is closed at the same time (such as Figure 5 and Figure 6 In other embodiments, for the step of "annealing treatment", the introduction of oxygen and compensation gas may not be turned off at the same time, for example, the oxygen is turned off first, and then the compensation gas is turned off after a preset time, or the compensation gas is turned off first, and then the oxygen is turned off after a preset time (such as Figure 7 ), but is not limited to this implementation manner.

[0061] It should be noted that for the step of "annealing treatment", the introduction of oxygen and compensation gas must overlap, that is, there must be a stage where oxygen and compensation gas are introduced at the same time, so as to achieve pulse annealing. In addition, the timing state of each step in each process cycle of this embodiment can be referred to in conjunction with Figure 5 Shows the timing status of each step in a single process cycle.

[0062] Optionally, in this embodiment, for the step of "annealing treatment", the content ratio of oxygen and compensation gas introduced in this step can be 2:100 to 15:100, such as 2:100, 5:100, 10:100, 15:100, etc. In other embodiments, the content ratio of oxygen and compensation gas introduced in the step of annealing treatment can also be less than 2:100, or can be greater than 15:100, such as 1.5:100, 16:100, etc., and is not limited to this embodiment.

[0063] Optionally, in this embodiment, for the step of "annealing treatment", the treatment time of this step can be 2s to 60s, such as 2s, 10s, 25s, 60s, etc. Among them, the so-called "treatment time" can be understood as the stage of introducing oxygen and compensation gas at the same time in this step. In other embodiments, the treatment time of annealing treatment can also be less than 2s, or can be greater than 60s, such as 1.9s, 65s, etc., and can be flexibly adjusted according to the thickness of the oxide layer film 201 required to be formed in a single process cycle, and is not limited to this embodiment.

[0064] Optionally, in this embodiment, for the step of "annealing treatment", the treatment temperature of this step can be 600°C to 1200°C, such as 600°C, 800°C, 950°C, 1200°C, etc. In other embodiments, the treatment temperature of the annealing treatment can also be lower than 600°C, or higher than 1200°C, such as 595°C, 1210°C, etc., and is not limited to this embodiment.

[0065] Optionally, in this embodiment, for the step of "annealing treatment", the compensation gas may include helium (He), wherein helium is more inert than oxygen. In other embodiments, other gases with higher inertness than oxygen may also be used as compensation gases, such as nitrogen (N 2 ), and other inert gases, but are not limited to this embodiment.

[0066] Optionally, in this embodiment, in a process cycle including the above-mentioned "forming the oxide film structure 200" and "annealing treatment", the processing temperature for forming the oxide film structure 200 and the processing temperature for the annealing treatment may be the same, thereby further ensuring a better thermal budget and better temperature uniformity. In other embodiments, the processing temperature for forming the oxide film structure 200 and the processing temperature for the annealing treatment may also be different, and is not limited to this embodiment.

[0067] Optionally, in this embodiment, in a process cycle including the above-mentioned "forming an oxide film structure 200" and "annealing treatment", the reaction environment can be evacuated after the oxide film structure 200 is formed. Accordingly, when the reaction environment returns to a vacuum state or is close to a vacuum state, a compensating gas and oxygen are introduced into the reaction environment for annealing. Among them, based on the fact that the reaction environment in this embodiment is a low-pressure and high-temperature environment, the low-pressure environment can discharge the residual gas (oxygen and hydrogen) in the previous step during the gas switching process between the two steps. In other embodiments, the reaction environment can also be evacuated using separate vacuum equipment and processes, which is not limited to this embodiment.

[0068] Optionally, in the present embodiment, in the two process cycles including the above-mentioned "forming the oxide film structure 200" and "annealing treatment", the reaction environment can be evacuated after the first process cycle is completed. Accordingly, when the reaction environment returns to a vacuum state or a near-vacuum state, hydrogen and oxygen are introduced into the reaction environment to carry out the next process cycle (the step of forming the oxide film structure 200). Among them, based on the fact that the reaction environment in the present embodiment is a low-pressure and high-temperature environment, the low-pressure environment can discharge the residual gas (oxygen and compensation gas) in the previous step during the gas switching process between the two steps. In other embodiments, the reaction environment can also be evacuated using separate vacuum equipment and processes, which is not limited to the present embodiment.

[0069] Based on the above detailed description of an exemplary embodiment of the method for forming an oxide layer proposed by the present invention, Figures 5 to 7 , based on the process timing perspective, several other exemplary embodiments of the method for forming an oxide layer are described. Among them, the process design of the following embodiments is roughly the same as that of this embodiment, and the following content is a detailed description of the main differences between the embodiments.

[0070] like Figure 5As shown, in this embodiment, the method for forming an oxide layer provided by the present invention includes five process cycles, that is, the above-mentioned step of forming an oxide film structure and the step of annealing treatment are alternately cycled five times. On this basis, according to the thickness of the oxide layer to be formed in the end, the thickness of the oxide film structure to be generated in each process cycle can be obtained, for example, one-fifth of the thickness of the oxide layer (assuming that the thickness of the oxide film structure generated in each cycle is equal).

[0071] Alternatively, if Figure 5 As shown, in this embodiment, for one process cycle, in the step of forming the oxide film structure, oxygen and hydrogen are turned on at the same time, and oxygen and hydrogen are turned off at the same time. Then, in the step of annealing, oxygen and compensation gas are turned on at the same time, and oxygen and compensation gas are turned off at the same time.

[0072] Alternatively, if Figure 5 As shown, in this embodiment, the same gas is introduced at the same time and in the same amount in the same step of each process cycle, that is, the thickness of each oxide film structure is substantially the same. In other embodiments, the same gas in the same step may be introduced at different times and in different process cycles, thereby obtaining oxide film structures with different thicknesses.

[0073] like Figure 6 As shown, in this embodiment, in the step of forming the oxide film structure, hydrogen is first introduced into the reaction environment, and during the process of introducing hydrogen, oxygen is introduced into the reaction environment. In other embodiments, oxygen may be introduced first, and then hydrogen is introduced during the process of introducing oxygen, but the invention is not limited thereto.

[0074] Alternatively, if Figure 6 As shown, in this embodiment, in the step of forming the oxide film structure, hydrogen and oxygen are turned off at the same time. In other embodiments, hydrogen can be turned off first, or oxygen can be turned off first, and it is not limited thereto.

[0075] like Figure 7 As shown, in this embodiment, in one process cycle, the oxygen involved in the formation of the oxide film structure and the oxygen involved in the annealing process can be introduced in a continuous process. On this basis, the timing state of one process cycle generally includes: turning on hydrogen and oxygen → turning off hydrogen → turning on compensation gas → turning off oxygen and compensation gas.

[0076] Alternatively, if Figure 7 As shown, in this embodiment, in the step of forming the oxide film structure, hydrogen and oxygen are turned on at the same time. In other embodiments, hydrogen can also be turned on before oxygen, and oxygen can also be turned on before hydrogen, and it is not limited to this.

[0077] Alternatively, if Figure 7 As shown, in this embodiment, in the annealing step, oxygen can be turned off at the same time as the compensation gas. In other embodiments, the compensation gas can be turned off before oxygen, but it is not limited thereto.

[0078] It should be noted that in the above Figures 5 to 7 In the detailed description of the drawings, the horizontal axis "t" of each figure represents the time in the time series state, and the vertical axis " 2 ”, “H 2 ","He" respectively represent the amount of oxygen, hydrogen, and helium (the compensation gas is helium as an example), and the vertical axis is zero, which means that the gas is turned off. Among them, the timing state of each gas is only exemplary, and the length of its timing graph on the horizontal axis and the height on the vertical axis only exemplarily express the opening or closing of the gas at a certain step, the relative size of the flow rate, and the relative length of the introduction time in this embodiment. Figures 5 to 7 This is intended to illustrate different process sequences in several implementation modes, and is not intended to display or limit specific steps and the time and flow rate of gas introduction. This is hereby clarified.

[0079] It should be noted that the methods for forming the oxide layer shown in the drawings and described in this specification are only a few examples of many processes that can employ the principles of the present invention. It should be clearly understood that the principles of the present invention are by no means limited to any details or any steps of the methods for forming the oxide layer shown in the drawings or described in this specification.

[0080] Based on the above detailed description of several exemplary embodiments of the method for forming an oxide layer provided by the present invention, an exemplary embodiment of the semiconductor structure provided by the present invention will be described below.

[0081] In this embodiment, the semiconductor structure proposed by the present invention comprises a substrate, and an oxide layer is formed on the surface of the substrate, wherein the oxide layer is formed by the oxide layer forming method proposed by the present invention and described in detail in the above embodiment.

[0082] It should be noted that the semiconductor structures shown in the drawings and described in this specification are only a few examples of the many types of semiconductor structures that can employ the principles of the present invention. It should be clearly understood that the principles of the present invention are by no means limited to any details or any structures of the semiconductor structures shown in the drawings or described in this specification.

[0083] In summary, the oxide layer formation method proposed in the present invention uses a compensating gas for pulsed annealing treatment, which can reduce the unstable Si-H bonds and Si-OH bonds in silicon dioxide. In addition, the present invention uses multiple cycles to alternately form and anneal the oxide film structure, which prolongs the annealing stage using the compensating gas, thereby providing more sufficient time and heat energy for the self-healing of the surface defects of the semiconductor structure substrate, significantly reducing the defects on the surface and interface of the substrate, and greatly improving the product yield of the semiconductor structure.

[0084] The above describes and / or illustrates in detail the exemplary embodiments of the method for forming an oxide layer and the semiconductor structure proposed by the present invention. However, the embodiments of the present invention are not limited to the specific embodiments described herein. On the contrary, the components and / or steps of each embodiment can be used independently and separately from other components and / or steps described herein. Each component and / or each step of an embodiment can also be used in combination with other components and / or steps of other embodiments. When introducing the elements / components / etc. described and / or illustrated herein, the terms "one", "one" and "above" are used to indicate the presence of one or more elements / components / etc. The terms "comprising", "including" and "having" are used to indicate the meaning of open inclusion and mean that in addition to the listed elements / components / etc., there may be other elements / components / etc. In addition, the terms "first" and "second" in the claims and the specification are used only as marks and are not numerical restrictions on their objects.

[0085] Although the oxide layer forming method and the semiconductor structure proposed by the present invention have been described according to different specific embodiments, those skilled in the art will recognize that the implementation of the present invention can be modified within the spirit and scope of the claims.

Claims

1. A method for forming an oxide layer, characterized in that: The following steps are involved: providing a substrate; Forming an oxide film structure, introducing hydrogen and oxygen into the reaction environment to form an oxide film structure on the surface of the substrate; the oxide film structure has gaps and Si-H bonds and Si-OH bonds; Annealing treatment, introducing a compensation gas into the reaction environment, and performing a pulse annealing treatment on the oxide film structure, so that at least a portion of the gaps in the oxide film structure overflow, and at least a portion of Si-H bonds and Si-OH bonds are broken, so as to form an oxide layer film; Repeat at least two cycles including the above steps to form at least two stacked oxide layer films on the surface of the substrate, thereby forming an oxide layer.

2. The forming method according to claim 1, characterized in that: During the annealing stage, oxygen is introduced into the reaction environment, and the compensating gas is more inert than oxygen.

3. The method for forming an oxide layer according to claim 2, characterized in that: The introduction of oxygen during the formation of the oxide film structure and the introduction of oxygen during the annealing treatment are continuous processes of introducing oxygen.

4. The method for forming an oxide layer according to claim 1, characterized in that: In at least one cycle, the following steps are also included: After the oxide film structure is formed, the reaction environment is evacuated.

5. The method for forming an oxide layer according to claim 1, characterized in that: In the step of forming the oxide film structure, when hydrogen and oxygen are introduced into the reaction environment, the following steps are included: introducing hydrogen into the reaction environment; During the process of introducing hydrogen, oxygen was introduced into the reaction environment.

6. The method for forming an oxide layer according to claim 1, characterized in that: In the annealing step, the ratio of the introduced oxygen to the compensation gas is 2:100 to 15:

100.

7. The method for forming an oxide layer according to claim 1, characterized in that: The annealing treatment may be performed at a time of 2 seconds to 60 seconds and / or at a temperature of 600° C. to 1200° C.

8. The method for forming an oxide layer according to claim 1, characterized in that: In the same cycle, the processing temperature of the step of forming the oxide film structure is the same as the processing temperature of the step of annealing treatment.

9. The method for forming an oxide layer according to claim 1, characterized in that: The compensation gas contains helium or nitrogen.

10. A semiconductor structure, characterized in that: An oxide layer is formed on the substrate surface of the semiconductor structure by the oxide layer forming method according to any one of claims 1 to 9.

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