Light emitting device, manufacturing method therefor, and display apparatus including the same

Abstract

A light emitting device, a method of manufacturing the same, and a display apparatus including the same are provided. The light emitting device includes a first semiconductor layer doped with a dopant of a first polarity and including a first portion extending in a first direction and a second portion connected to one side of the first portion, a second semiconductor layer doped with a dopant of a second polarity different from the first polarity, an active layer disposed between the first semiconductor layer and the second semiconductor layer, and an insulating film disposed to surround at least an outer surface of the active layer and extend in the first direction, wherein a diameter of the second portion measured in a second direction perpendicular to the first direction is greater than a diameter of the first portion measured in the second direction, and a side surface of the second portion is inclined.

Description

Technical Field

[0001] The disclosure relates to a light-emitting device, a method for manufacturing the light-emitting device, and a display device including the light-emitting device. Background Technology

[0002] With the development of multimedia technology, the importance of display devices has steadily increased. In response, various types of display devices, such as organic light-emitting diodes (OLEDs) and liquid crystal displays (LCDs), have been adopted.

[0003] A display device is a means for displaying images and includes a display panel such as an organic light-emitting display panel or a liquid crystal display panel. A light-emitting display panel may include light-emitting elements (e.g., light-emitting diodes (LEDs)), and examples of light-emitting diodes include organic light-emitting diodes (OLEDs) that use organic materials as fluorescent materials and inorganic light-emitting diodes that use inorganic materials as fluorescent materials.

[0004] Inorganic light-emitting diodes (LEDs) using inorganic semiconductors as fluorescent materials have the advantage of durability even in high-temperature environments and exhibit higher blue light efficiency than organic light-emitting diodes (OLEDs). Furthermore, a transfer method using dielectric electrophoresis (DEP) has been developed to address the manufacturing processes that are pointed out as drawbacks of conventional inorganic LEDs. Therefore, ongoing research has been conducted on inorganic LEDs that offer superior durability and efficiency compared to organic LEDs. Summary of the Invention

[0005] Technical issues

[0006] The disclosed aspect provides a light-emitting device and a method for manufacturing the light-emitting device, wherein the light-emitting device is manufactured by etching a semiconductor crystal and the two ends of the light-emitting device have different widths.

[0007] The disclosed aspect also provides a display device that includes the above-mentioned light-emitting devices and thus has an increased contact area between the light-emitting devices and the contact electrodes.

[0008] It should be noted that the disclosed aspects are not limited thereto, and other aspects not mentioned herein will be obvious to those skilled in the art based on the following description.

[0009] Technical solution

[0010] According to a disclosed embodiment, a light-emitting device includes: a first semiconductor layer doped with a first polarity dopant and comprising a first portion extending in a first direction and a second portion connected to one side of the first portion; a second semiconductor layer doped with a second polarity dopant different from the first polarity; an active layer disposed between the first semiconductor layer and the second semiconductor layer; and an insulating film surrounding at least the outer surface of the active layer and extending in the first direction, wherein the diameter of the second portion measured in a second direction perpendicular to the first direction is greater than the diameter of the first portion measured in the second direction, and the side surface of the second portion is inclined.

[0011] An insulating film may surround the outer surface of a first portion of the first semiconductor layer, and the side surface of the second portion may be exposed without contacting the insulating film.

[0012] The length of the second part can be approximately 10% of the length of the light-emitting device.

[0013] The second part may include an upper surface connected to the first part and a lower surface facing the upper surface, and the diameter of the lower surface of the second part may be greater than the diameter of the upper surface.

[0014] The diameter of the lower surface of the second portion of the first semiconductor layer may be 1.25 to 1.8 times the diameter of the first portion of the first semiconductor layer.

[0015] The lower surface of the second part can have a diameter of 750 nm to 900 nm.

[0016] The diameter of the lower surface of the second part can be greater than the sum of the diameter of the first part and the thickness of the insulating film.

[0017] At least a portion of the upper surface of the second part can contact the insulating film.

[0018] The included angle formed by the lower surface and the side surface of the second part can be in the range of 65 degrees to 80 degrees.

[0019] The light-emitting device may also include an electrode layer disposed on the second semiconductor layer.

[0020] A portion of the side surface of the electrode layer can be exposed without contacting the insulating film.

[0021] The insulating film may have a curved outer surface, such that the thickness of the insulating film decreases along the first direction.

[0022] According to a disclosed embodiment, a method for manufacturing a light-emitting device includes: preparing a substrate and forming a semiconductor structure disposed on the substrate and including a first semiconductor; forming a plurality of holes and a semiconductor crystal by partially etching the semiconductor structure, the plurality of holes exposing a portion of the first semiconductor, the semiconductor crystal including a portion of the first semiconductor and spaced apart from each other; forming an insulating film disposed on the outer surface of the semiconductor crystal and the exposed portion of the first semiconductor; and separating a device rod formed by etching the insulating film and the first semiconductor stacked with the plurality of holes from the substrate.

[0023] Each of the device bars may include: a first semiconductor layer including a first portion extending in one direction and a second portion connected to one side of the first portion and having a diameter larger than that of the first portion; an active layer disposed on the first portion of the first semiconductor layer; and a second semiconductor layer disposed on the active layer.

[0024] Each of the semiconductor crystals may include a first portion of a first semiconductor layer, and in the step of forming the device rod, the first semiconductor exposed along the plurality of holes may be etched to form a second portion of the first semiconductor layer, and the insulating film may be partially removed to expose the upper surface of the semiconductor crystal.

[0025] Each of the device bars may also include an electrode layer disposed on the second semiconductor layer.

[0026] According to a disclosed embodiment, a display device includes: a substrate; a first electrode and a second electrode, the first electrode being disposed on the substrate and the second electrode being spaced apart from the first electrode; and at least one light-emitting device disposed between the first electrode and the second electrode and electrically connected to the first electrode and the second electrode, wherein the light-emitting device may extend in a first direction, and the diameter of one end of the light-emitting device measured in a second direction perpendicular to the first direction is smaller than the diameter of the other end of the light-emitting device measured in the second direction.

[0027] The light-emitting device may include: a first semiconductor layer including a first portion extending in a first direction and a second portion connected to one side of the first portion; an active layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the active layer; an electrode layer disposed on the second semiconductor layer; and an insulating film surrounding at least the outer surface of the active layer and extending in the first direction, wherein the diameter of the second portion measured in the second direction may be larger than the diameter of the first portion measured in the second direction, and the side surface of the second portion is inclined.

[0028] The display device may further include: a first contact electrode that contacts one end of the first electrode and the light-emitting device; and a second contact electrode that contacts the other end of the second electrode and the light-emitting device.

[0029] The second contact electrode can contact the second portion of the first semiconductor layer and form a first contact surface that contacts the lower surface of the second portion and a second contact surface that contacts the side surface of the second portion. The first contact electrode can contact the upper surface of the electrode layer to form a third contact surface.

[0030] The area of ​​the first contact surface can be larger than the area of ​​the third contact surface.

[0031] The first contact surface and the second contact surface may not be parallel to each other.

[0032] The insulating film of the light-emitting device may partially surround the side surface of the electrode layer, and the first contact electrode may contact the exposed side surface of the electrode layer.

[0033] Each of the first and second contact electrodes can partially contact the insulating film of the light-emitting device.

[0034] Details of other embodiments are included in the detailed description and the accompanying drawings.

[0035] Beneficial effects

[0036] In the light-emitting device according to the embodiment, one end may have a diameter larger than that of the other end, and the side surface of the semiconductor layer may be partially exposed at said end. The semiconductor layer of the light-emitting device may include a lower surface and inclined side surfaces to form a wide contact surface with the contact electrodes of the display device.

[0037] Therefore, display devices including the above-mentioned light-emitting devices can reduce the contact resistance between the contact electrode and the light-emitting device, thereby improving the electrical characteristics and luminous efficiency of the light-emitting device.

[0038] The effects of the embodiments are not limited to the above-described examples, and many more effects are included in this disclosure. Attached Figure Description

[0039] Figure 1 This is a schematic plan view of a display device according to an embodiment;

[0040] Figure 2 This is a schematic plan view of the pixels of a display device according to an embodiment;

[0041] Figure 3 yes Figure 2 A planar graph of sub-pixels;

[0042] Figure 4 It is along Figure 3 A sectional view taken by lines Xa-Xa', Xb-Xb', and Xc-Xc';

[0043] Figure 5This is a schematic diagram of a light-emitting device according to an embodiment;

[0044] Figure 6 This is a schematic cross-sectional view of the light-emitting device according to an embodiment;

[0045] Figure 7 yes Figure 6 A magnified view of part of the QL;

[0046] Figure 8 yes Figure 4 Enlarged view of some QA sections;

[0047] Figure 9 This is a cross-sectional view of a portion of a display device according to an embodiment;

[0048] Figure 10 This is a flowchart illustrating a method for manufacturing a light-emitting device according to an embodiment;

[0049] Figures 11 to 16 This is a cross-sectional view illustrating the process of manufacturing a light-emitting device according to an embodiment;

[0050] Figures 17 to 19 This is a cross-sectional view showing a portion of the manufacturing process of a display device according to an embodiment;

[0051] Figure 20 This is a cross-sectional view of a portion of a display device according to an embodiment;

[0052] Figure 21 This is a schematic cross-sectional view of the light-emitting device according to an embodiment;

[0053] Figure 22 It includes Figure 21 A cross-sectional view of a portion of a display device containing light-emitting devices;

[0054] Figure 23 and Figure 24 This is a cross-sectional view of a portion of a display device including light-emitting devices according to an embodiment;

[0055] Figure 25 This is a plan view of the sub-pixels of the display device according to an embodiment; and

[0056] Figure 26 This is a plan view of the pixels of the display device according to an embodiment. Detailed Implementation

[0057] The invention will now be described more fully below with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. However, the invention may be embodied in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0058] It will also be understood that when a layer is referred to as being "on" another layer or substrate, the layer may be directly on said other layer or substrate, or there may be an intermediate layer. Throughout the specification, the same reference numerals indicate the same components.

[0059] It will be understood that although the terms “first,” “second,” etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used only to distinguish one element from another. For example, without departing from the teachings of the invention, the first element discussed below may be referred to as the second element. Similarly, the second element may also be referred to as the first element.

[0060] In the following description, embodiments will be illustrated with reference to the accompanying drawings.

[0061] Figure 1 This is a schematic plan view of a display device according to an embodiment.

[0062] Reference Figure 1 The display device 10 displays moving or still images. The display device 10 can refer to any electronic device that provides a display screen. Examples of display devices 10 may include televisions, laptop computers, monitors, billboards, Internet of Things (IoT) devices, mobile phones, smartphones, tablet PCs, electronic watches, smartwatches, watch phones, head-mounted displays, mobile communication terminals, electronic notebooks, e-books, portable multimedia players (PMPs), navigation devices, game consoles, digital cameras, and camcorders, all of which provide a display screen.

[0063] Display device 10 includes a display panel that provides a display screen. Examples of display panels may include light-emitting diode (LED) display panels, organic light-emitting diode (OLED) display panels, quantum dot (QD) display panels, plasma display panels, and field emission display panels. An example of using an LED display panel as the display panel will be described below; however, the disclosure is not limited to this, and other display panels may also be used, provided the same technical spirit applies.

[0064] The shape of the display device 10 can be modified in various ways. For example, the display device 10 can have various shapes such as a horizontal rectangle, a vertical rectangle, a square, a quadrilateral with rounded corners (vertices), other polygons, and a circle. The shape of the display area DA of the display device 10 can also be similar to the overall shape of the display device 10. Figure 1 In the display device 10 and the display area DA, both have a horizontally elongated rectangular shape.

[0065] The display device 10 may include a display area DA and a non-display area NDA. The display area DA may be an area where a screen can be displayed, and the non-display area NDA may be an area where a screen is not displayed. The display area DA may also be referred to as the active area, and the non-display area NDA may also be referred to as the inactive area.

[0066] The display area DA typically occupies the center of the display device 10. The display area DA may include multiple pixels PX. The pixels PX may be arranged in a matrix. Each of the pixels PX may be a rectangle or a square in a plan view. However, the disclosure is not limited to this; each of the pixels PX may also have a rhombus shape in which each side is tilted relative to a direction. Each of the pixels PX may display a specific color by including one or more light-emitting devices 300 that emit light of a specific wavelength.

[0067] Figure 2 This is a schematic plan view of the pixels of a display device according to an embodiment. Figure 3 yes Figure 2 A planar graph of subpixels.

[0068] Reference Figure 2 and Figure 3 Each of the pixels PX can include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3. The first sub-pixel PX1 can emit light of a first color, the second sub-pixel PX2 can emit light of a second color, and the third sub-pixel PX3 can emit light of a third color. The first color can be blue, the second color can be green, and the third color can be red. However, the disclosure is not limited to this, and sub-pixels PXn (e.g., PX1, PX2, and PX3) can also emit light of the same color. Furthermore, although in Figure 2 The middle pixel PX includes three sub-pixels PXn, but this is not the only disclosure; a pixel PX may also include a larger number of sub-pixels PXn.

[0069] Each sub-pixel PXn of the display device 10 may include a region defined as an emission region EMA. A first sub-pixel PX1 may include a first emission region EMA1, a second sub-pixel PX2 may include a second emission region EMA2, and a third sub-pixel PX3 may include a third emission region EMA3. The emission region EMA may be defined as an area where a light-emitting device 300 included in the display device 10 is disposed to emit light of a specific wavelength. Each of the light-emitting devices 300 may include an active layer 330 (see...). Figure 5 The active layer 330 can emit light of a specific wavelength without directionality. Light emitted from the active layer 330 of each light-emitting device 300 can illuminate the light-emitting device 300 in the lateral direction and towards both ends of the light-emitting device 300. The emission region EMA of each sub-pixel PXn may include a region in which the light-emitting device 300 is disposed and a region adjacent to the light-emitting device 300 from which the light emitted from the light-emitting device 300 is output. In addition, the disclosure is not limited thereto, the emission region EMA may also include a region from which the light emitted from the light-emitting device 300 is output after being reflected or refracted by other components. Multiple light-emitting devices 300 may be disposed in each sub-pixel PXn, and the region in which the light-emitting device 300 is disposed and the region adjacent to that region may form the emission region EMA.

[0070] Although not shown in the accompanying drawings, each sub-pixel PXn of the display device 10 may include a non-emissive region defined as an area other than the emitting region EMA. A non-emissive region may be an area in which no light-emitting device 300 is disposed and no light is emitted from it because light emitted from the light-emitting device 300 does not reach that area.

[0071] Each sub-pixel PXn of the display device 10 may include multiple electrodes 210 and 220, a light-emitting device 300, multiple contact electrodes 260, and multiple outer embankments 430. Additionally, although in Figure 2 and Figure 3 Not shown in the diagram, but the display device 10 may also include a plurality of inner embankments 410 and 420 (see Figure 10). Figure 4 ) and multiple insulating layers 510, 520, 530 and 550 (see Figure 4 ).

[0072] Electrodes 210 and 220 may include a first electrode 210 and a second electrode 220. Each of the first electrode 210 and the second electrode 220 may include an electrode main body 210S or 220S extending in a first direction DR1 and at least one electrode branch 210B or 220B extending from the electrode main body 210S or 220S and branching in a second direction DR2 intersecting the first direction DR1.

[0073] The first electrode 210 may include a first electrode main body 210S extending in a first direction DR1 and at least one first electrode branch 210B branching from the first electrode main body 210S and extending in a second direction DR2.

[0074] The first electrode main stem 210S of any pixel may have two ends terminating between sub-pixels PXn and spaced apart from the ends of adjacent first electrode main stems 210S, but may be located substantially on the same straight line as the first electrode main stems 210S of adjacent sub-pixels in the same row (e.g., adjacent in the first direction DR1). Since the ends of the first electrode main stems 210S respectively provided in the sub-pixels PXn are spaced apart from each other, different electrical signals can be transmitted to each first electrode branch 210B.

[0075] The first electrode branch 210B may branch from at least a portion of the first electrode main stem 210S and extend in the second direction DR2 to terminate at a position spaced apart from the second electrode main stem 220S facing the first electrode main stem 210S.

[0076] The second electrode 220 may include a second electrode main branch 220S and a second electrode branch 220B. The second electrode main branch 220S extends in a first direction DR1 and is spaced apart from the first electrode main branch 210S in a second direction DR2, facing the first electrode main branch 210S. The second electrode branch 220B branches from the second electrode main branch 220S and extends in the second direction DR2. The other end of the second electrode main branch 220S may be connected to the second electrode main branch 220S of another adjacent sub-pixel PXn in the first direction DR1. That is, unlike the first electrode main branch 210S, the second electrode main branch 220S may extend in the first direction DR1 to traverse the sub-pixel PXn. The second electrode main branch 220S traversing the sub-pixel PXn may be connected to the peripheral portion of the display area DA in which each pixel PX or sub-pixel PXn is disposed, or connected to a portion extending in one direction in the non-display area NDA.

[0077] The second electrode branch 220B can be spaced apart from the first electrode branch 210B to face the first electrode branch 210B, and can terminate at a position spaced apart from the first electrode main branch 210S. The second electrode branch 220B can be connected to the second electrode main branch 220S, and in each sub-pixel PXn, its end in the extending direction can be spaced apart from the first electrode main branch 210S.

[0078] The first electrode 210 and the second electrode 220 can be electrically connected to the circuit device layer PAL of the display device 10 (see [reference]) through contact holes (e.g., first electrode contact hole CNTD and second electrode contact hole CNTS), respectively. Figure 4 In the accompanying drawings, a first electrode contact hole CNTD is formed in the first electrode main branch 210S of each sub-pixel PXn, and only one second electrode contact hole CNTS is formed in a second electrode main branch 220S traversing the sub-pixel PXn. However, the disclosure is not limited thereto. In some cases, the second electrode contact hole CNTS may also be formed in each sub-pixel PXn.

[0079] Electrodes 210 and 220 can be electrically connected to the light-emitting device 300 and can receive a predetermined voltage, enabling the light-emitting device 300 to emit light of a specific wavelength. Additionally, at least a portion of each of electrodes 210 and 220 can be used to form an electric field in the sub-pixel PXn to align the light-emitting device 300.

[0080] In an embodiment, the first electrode 210 may be a pixel electrode separate for each sub-pixel PXn, and the second electrode 220 may be a common electrode commonly connected along each sub-pixel PXn. Either the first electrode 210 or the second electrode 220 may be the anode of the light-emitting device 300, and the other may be the cathode of the light-emitting device 300. However, the disclosure is not limited thereto, and vice versa.

[0081] Although the accompanying drawings show two first electrode branches 210B in each sub-pixel PXn and a second electrode branch 220B disposed between the two first electrode branches 210B, the disclosure is not limited thereto. In some cases, the first electrode 210 and the second electrode 220 may not include the electrode mains 210S and 220S, and may extend in the second direction DR2. Furthermore, the first electrode 210 and the second electrode 220 do not necessarily have to extend in one direction, and may be arranged in various structures. For example, the first electrode 210 and the second electrode 220 may be partially bent or folded, or either the first electrode 210 or the second electrode 220 may surround the other electrode. The structure or shape in which the first electrode 210 and the second electrode 220 are disposed is not particularly limited, as long as the first electrode 210 and the second electrode 220 are at least partially spaced apart to face each other, such that a space can be formed between the first electrode 210 and the second electrode 220 in which the light-emitting device 300 will be disposed.

[0082] The outer dam 430 may be disposed at the boundary between sub-pixels PXn. The outer dam 430 may extend in the second direction DR2 to lie at the boundary between sub-pixels PXn disposed in the first direction DR1. The respective ends of the plurality of first electrode main bodies 210S may be spaced apart from each other by the outer dam 430. However, the disclosure is not limited thereto; the outer dam 430 may also extend in the first direction DR1 to lie at the boundary between sub-pixels PXn disposed in the second direction DR2. The outer dam 430 may comprise the same material as the inner dams 410 and 420, which will be described later, and may be formed simultaneously with the inner dams 410 and 420 in a single process.

[0083] The light-emitting device 300 can be disposed between the first electrode 210 and the second electrode 220. One end of each of the light-emitting devices 300 can be electrically connected to the first electrode 210, and the other end of each of the light-emitting devices 300 can be electrically connected to the second electrode 220. The light-emitting device 300 can be electrically connected to the first electrode 210 and the second electrode 220 respectively through contact electrodes 260.

[0084] The light-emitting devices 300 can be spaced apart from each other and aligned substantially parallel to each other. The gap between the light-emitting devices 300 is not particularly limited. In some cases, multiple light-emitting devices 300 can be arranged adjacent to each other to form a group, and multiple other light-emitting devices 300 can form a group at a certain distance from the above groups, or multiple light-emitting devices 300 can be oriented and aligned in one direction with non-uniform density. In addition, in embodiments, the light-emitting devices 300 can extend in one direction, and the direction in which each electrode (e.g., the first electrode branch 210B and the second electrode branch 220B) extends and the direction in which the light-emitting device 300 extends can be substantially perpendicular to each other. However, the disclosure is not limited to this, and the light-emitting devices 300 can also extend in a direction that is not perpendicular to the direction in which the first electrode branch 210B and the second electrode branch 220B extend but is inclined.

[0085] The light-emitting device 300 according to an embodiment may include an active layer 330, which comprises different materials to emit light of different wavelengths to the outside. The display device 10 according to an embodiment may include a light-emitting device 300 that emits light of different wavelengths. The light-emitting device 300 of the first sub-pixel PX1 may include an active layer 330 that emits first light with a center wavelength of a first wavelength. The light-emitting device 300 of the second sub-pixel PX2 may include an active layer 330 that emits second light with a center wavelength of a second wavelength. The light-emitting device 300 of the third sub-pixel PX3 may include an active layer 330 that emits third light with a center wavelength of a third wavelength.

[0086] Therefore, the first light can be emitted from the first sub-pixel PX1, the second light can be emitted from the second sub-pixel PX2, and the third light can be emitted from the third sub-pixel PX3. In some embodiments, the first light can be blue light with a center wavelength in the range of 450nm to 495nm, the second light can be green light with a center wavelength in the range of 495nm to 570nm, and the third light can be red light with a center wavelength in the range of 620nm to 752nm.

[0087] However, the disclosure is not limited to this. In some cases, the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 may include the same type of light-emitting device 300 to emit light of substantially the same color.

[0088] Each of the light-emitting devices 300 according to the embodiments may include a semiconductor core and an insulating film 380 surrounding the semiconductor core (see Figure 5 The semiconductor core may include multiple semiconductor layers 310 and 320 (see...). Figure 5 ) and the active layer 330 disposed between them (see Figure 5 One end of each light-emitting device 300 can be electrically connected to the first electrode 210, and the other end of each light-emitting device 300 can be electrically connected to the second electrode 220 to receive electrical signals. In each light-emitting device 300 that receives an electrical signal, light can be generated from the active layer 330 and emitted to the outside.

[0089] Here, the two ends of each light-emitting device 300 are electrically connected to electrodes 210 and 220 via contact electrodes 260, which will be described later. To improve the luminous efficiency of the light-emitting device 300, a smooth contact between the light-emitting device 300 and the contact electrodes 260 may be required. For this purpose, each of the light-emitting devices 300 may also include an electrode layer 370 disposed on at least one surface of the semiconductor layers 310 and 320 (see [link to electrode layer description]). Figure 5 However, in the process of manufacturing the light-emitting device 300, a process of etching a semiconductor structure in one direction in which multiple layers are stacked is performed. In the manufacturing process, a separate process may also be required to form an electrode layer 370 on the lower surface of each light-emitting device 300 (e.g., on the lower surface of the first semiconductor layer 310).

[0090] Smooth contact between the light-emitting device 300 and the contact electrode 260 can be achieved by increasing the contact area between them. For this purpose, according to the embodiment, the diameter of one end of each light-emitting device 300 can be larger than the diameter of the other end. Even without the electrode layer 370, said end of each light-emitting device 300 can have a larger contact area with the contact electrode 260 of the display device 10, and the electrical characteristics of the light-emitting device 300 can be improved, thereby improving luminous efficiency. This will be described in detail later with reference to other figures.

[0091] At least a portion of each of the contact electrodes 260 may extend in one direction. The contact electrodes 260 may contact the light-emitting device 300 and the electrodes 210 and 220, and the light-emitting device 300 may receive electrical signals from the first electrode 210 and the second electrode 220 through the contact electrodes 260.

[0092] The contact electrode 260 may include a first contact electrode 261 and a second contact electrode 262. The first contact electrode 261 and the second contact electrode 262 may be respectively disposed on the first electrode branch 210B and the second electrode branch 220B.

[0093] The first contact electrode 261 may be disposed on the first electrode 210 or the first electrode branch 210B to extend in the second direction DR2, and may contact one end of each of the light-emitting devices 300. The second contact electrode 262 may be spaced apart from the first contact electrode 261 in the first direction DR1. The second contact electrode 262 may be disposed on the second electrode 220 or the second electrode branch 220B to extend in the second direction DR2, and may contact the other end of each of the light-emitting devices 300. The first contact electrode 261 and the second contact electrode 262 may contact the first electrode 210 and the second electrode 220 exposed through the opening in the second insulating layer 520. The light-emitting device 300 may be electrically connected to the first electrode 210 and the second electrode 220 via the first contact electrode 261 and the second contact electrode 262.

[0094] In some embodiments, the widths of the first contact electrode 261 and the second contact electrode 262, measured in one direction, may be greater than the widths of the first electrode 210 and the second electrode 220, measured in that direction, or the widths of the first electrode branch 210B and the second electrode branch 220B, measured in that direction. Each of the first contact electrode 261 and the second contact electrode 262 may cover a side of the first electrode 210 or the second electrode 220, or a side of the first electrode branch 210B or the second electrode branch 220B. However, the disclosure is not limited thereto. In some cases, each of the first contact electrode 261 and the second contact electrode 262 may cover only one side of the first electrode branch 210B or the second electrode branch 220B.

[0095] Although two first contact electrodes 261 and one second contact electrode 262 are arranged in one sub-pixel PXn in the accompanying drawings, the disclosure is not limited thereto. The number of first contact electrodes 261 and second contact electrodes 262 can be varied depending on the number of first electrodes 210 and second electrodes 220 arranged in each sub-pixel PXn or the number of first electrode branches 210B and second electrode branches 220B.

[0096] Despite Figure 2 and Figure 3 Although not shown in the diagram, the display device 10 may include a circuit device layer PAL located below each of the electrodes 210 and 220 and a plurality of insulating layers disposed on the circuit device layer PAL. Now, reference will be made to... Figure 4 The stacking structure of the display device 10 is described in detail.

[0097] Figure 4 It is along Figure 3 The sectional view taken by lines Xa-Xa', Xb-Xb', and Xc-Xc'.

[0098] Figure 4 The cross-section of only the first sub-pixel PX1 is shown, but the same illustration can be applied to other pixels PX or sub-pixels PXn. Figure 4 A cross-section is shown across one end and the other end of the light-emitting device 300 disposed in the first sub-pixel PX1.

[0099] Combination Figure 2 and Figure 3 Reference Figure 4 The display device 10 may include a circuit device layer (PAL) and a light-emitting layer (EML). The circuit device layer (PAL) may include a substrate 110, a buffer layer 115, a light-blocking layer (BML), conductive wiring 191 and 192, a first transistor 120, and a second transistor 140, etc. The light-emitting layer (EML) may include the aforementioned electrodes 210 and 220, a light-emitting device 300, contact electrodes 261 and 262, and insulating layers 510, 520, 530, and 550, etc.

[0100] Specifically, the substrate 110 can be an insulating substrate. The substrate 110 can be made of an insulating material such as glass, quartz, or polymer resin. In addition, the substrate 110 can be a rigid substrate, but it can also be a flexible substrate that can be bent, folded, rolled, etc.

[0101] A light-blocking layer BML can be disposed on the substrate 110. The light-blocking layer BML may include a first light-blocking layer BML1 and a second light-blocking layer BML2. The first light-blocking layer BML1 may be electrically connected to the first source electrode 123 of the first transistor 120, which will be described later. The second light-blocking layer BML2 may be electrically connected to the second source electrode 143 of the second transistor 140.

[0102] The first light-blocking layer BML1 and the second light-blocking layer BML2 are respectively stacked with the first active material layer 126 of the first transistor 120 and the second active material layer 146 of the second transistor 140. The first light-blocking layer BML1 and the second light-blocking layer BML2 may include a light-blocking material to prevent light from entering the first active material layer 126 and the second active material layer 146. For example, the first light-blocking layer BML1 and the second light-blocking layer BML2 may be made of an opaque metallic material that blocks light transmission. However, the disclosure is not limited thereto. In some cases, the light-blocking layer BML may be omitted.

[0103] A buffer layer 115 is disposed on the light-blocking layer BML and the substrate 110. The buffer layer 115 can completely cover the substrate 110 and the light-blocking layer BML. The buffer layer 115 can prevent the diffusion of impurity ions, prevent the penetration of moisture or external air, and perform a surface planarization function. In addition, the buffer layer 115 can insulate the light-blocking layer BML from the first active material layer 126 and the second active material layer 146.

[0104] A semiconductor layer is disposed on the buffer layer 115. The semiconductor layer may include a first active material layer 126 of the first transistor 120, a second active material layer 146 of the second transistor 140, and an auxiliary layer 163. The semiconductor layer may include polycrystalline silicon, monocrystalline silicon, oxide semiconductor, etc.

[0105] The first active material layer 126 may include a first doped region 126a, a second doped region 126b, and a first channel region 126c. The first channel region 126c may be disposed between the first doped region 126a and the second doped region 126b. The second active material layer 146 may include a third doped region 146a, a fourth doped region 146b, and a second channel region 146c. The second channel region 146c may be disposed between the third doped region 146a and the fourth doped region 146b. The first active material layer 126 and the second active material layer 146 may include polycrystalline silicon. Polycrystalline silicon can be formed by crystallizing amorphous silicon. Examples of crystallization methods may include, but are not limited to, rapid thermal annealing (RTA), solid-state crystallization (SPC), excimer laser annealing (ELA), metal-induced crystallization (MILC), and sequential lateral solidification (SLS). Optionally, the first active material layer 126 and the second active material layer 146 may include monocrystalline silicon, low-temperature polycrystalline silicon, amorphous silicon, etc. The first doped region 126a, the second doped region 126b, the third doped region 146a, and the fourth doped region 146b can be, but are not limited to, regions of the first active material layer 126 and the second active material layer 146 that are doped with impurities.

[0106] However, the first active material layer 126 and the second active material layer 146 are not necessarily limited to those described above. In embodiments, the first active material layer 126 and the second active material layer 146 may comprise an oxide semiconductor. In this case, the first doped region 126a and the third doped region 146a may be first conductive regions, and the second doped region 126b and the fourth doped region 146b may be second conductive regions. When the first active material layer 126 and the second active material layer 146 comprise an oxide semiconductor, the oxide semiconductor may be an indium (In)-containing oxide semiconductor. In some embodiments, the oxide semiconductor may be, but is not limited to, indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium oxide (IGO), indium zinc tin oxide (IZTO), indium gallium tin oxide (IGTO), or indium gallium zinc tin oxide (IGZTO).

[0107] A first gate insulating layer 150 is disposed on the semiconductor layer. The first gate insulating layer 150 may completely cover the buffer layer 115 and the semiconductor layer. The first gate insulating layer 150 may be used as the gate insulating layer for each of the first transistor 120 and the second transistor 140.

[0108] A first conductive layer is disposed on a first gate insulating layer 150. The first conductive layer disposed on the first gate insulating layer 150 may include a first gate electrode 121 disposed on a first active material layer 126 of the first transistor 120, a second gate electrode 141 disposed on a second active material layer 146 of the second transistor 140, and a wiring pattern 161 disposed on an auxiliary layer 163. The first gate electrode 121 may be stacked with a first channel region 126c of the first active material layer 126, and the second gate electrode 141 may be stacked with a second channel region 146c of the second active material layer 146.

[0109] An interlayer insulating film 170 is disposed on the first conductive layer. The interlayer insulating film 170 can serve as an insulating film between the first conductive layer and other layers disposed on the first conductive layer. In addition, the interlayer insulating film 170 may include an organic insulating material and perform a surface planarization function.

[0110] The second conductive layer is disposed on the interlayer insulating film 170. The second conductive layer includes the first source electrode 123 and the first drain electrode 124 of the first transistor 120, the second source electrode 143 and the second drain electrode 144 of the second transistor 140, and the power electrode 162 disposed on the wiring pattern 161.

[0111] The first source electrode 123 and the first drain electrode 124 can contact the first doped region 126a and the second doped region 126b of the first active material layer 126, respectively, through contact holes penetrating the interlayer insulating film 170 and the first gate insulating layer 150. The second source electrode 143 and the second drain electrode 144 can contact the third doped region 146a and the fourth doped region 146b of the second active material layer 146, respectively, through contact holes penetrating the interlayer insulating film 170 and the first gate insulating layer 150. In addition, the first source electrode 123 and the second source electrode 143 can be electrically connected to the first photoblocking layer BML1 and the second photoblocking layer BML2, respectively, through other contact holes.

[0112] The protective layer 180 can be disposed on the second conductive layer. The protective layer 180 can cover the second conductive layer and can be completely disposed on the interlayer insulating film 170. That is, the protective layer 180 can cover the first source electrode 123, the first drain electrode 124, the second source electrode 143, and the second drain electrode 144.

[0113] A conductive wiring layer may be disposed on the protective layer 180. The conductive wiring layer may include a first conductive wiring 191 and a second conductive wiring 192. The first conductive wiring 191 and the second conductive wiring 192 may be electrically connected to the first source electrode 123 and the power supply electrode 162 of the first transistor 120, respectively. The conductive wiring layer may also be electrically connected to the first electrode 210 and the second electrode 220 of the light-emitting layer EML, and may transmit electrical signals received from the first transistor 120 and the power supply electrode 162 to each of the electrodes 210 and 220.

[0114] A first insulating layer 510 is disposed on the conductive wiring layer. The first insulating layer 510 may include an organic insulating material and perform a surface planarization function.

[0115] Inner dikes 410 and 420, outer dike 430 (see...) Figure 3 Electrodes 210 and 220 and light-emitting device 300 can be disposed on the first insulating layer 510.

[0116] As described above, the outer dike 430 can extend in either the first direction DR1 or the second direction DR2 to be located at the boundary of the sub-pixel PXn. That is, the outer dike 430 can define the boundary of each sub-pixel PXn.

[0117] Although not shown in the accompanying drawings, when ink in which light-emitting devices 300 are dispersed is jetted using an inkjet printing apparatus during the manufacture of the display device 10, the outer barrier 430 prevents ink flow from crossing the boundary of each sub-pixel PXn. The outer barrier 430 can separate ink in which different light-emitting devices 300 are dispersed for different sub-pixels PXn, so that the ink does not mix with each other. However, the disclosure is not limited thereto.

[0118] Inner dikes 410 and 420 may be spaced apart from each other in each sub-pixel PXn. Inner dikes 410 and 420 may include a first inner dike 410 and a second inner dike 420 disposed adjacent to the center of each sub-pixel PXn.

[0119] The first inner bank 410 and the second inner bank 420 are spaced apart and face each other. A first electrode 210 may be disposed on the first inner bank 410, and a second electrode 220 may be disposed on the second inner bank 420. Figure 3 and Figure 4 It is understood that the first electrode branch 210B is disposed on the first inner dam 410, and the second electrode branch 220B is disposed on the second inner dam 420.

[0120] Similar to the first electrode 210 and the second electrode 220, the first inner dam 410 and the second inner dam 420 may extend in each sub-pixel PXn along the second direction DR2. Although not shown in the figures, the first inner dam 410 and the second inner dam 420 may extend in the second direction DR2 toward the adjacent sub-pixel PXn in the second direction DR2. However, the disclosure is not limited thereto, and the first inner dam 410 and the second inner dam 420 may also be provided in each sub-pixel PXn to form a pattern throughout the display device 10.

[0121] At least a portion of each of the first inner dam 410 and the second inner dam 420 may protrude from the first insulating layer 510. Each of the first inner dam 410 and the second inner dam 420 may protrude upward from the plane in which the light-emitting device 300 is disposed, and the protrusion may be at least partially inclined. The protruding shape of each of the first inner dam 410 and the second inner dam 420 is not particularly limited. Since the inner dams 410 and 420 protruding from the first insulating layer 510 have inclined side surfaces, light emitted from the light-emitting device 300 can be reflected by the inclined side surfaces of the inner dams 410 and 420. As will be described later, when the electrodes 210 and 220 disposed on the inner dams 410 and 420 comprise a material with high reflectivity, light emitted from the light-emitting device 300 can be reflected by the electrodes 210 and 220 located on the inclined side surfaces of the inner dams 410 and 420 to travel upward on the first insulating layer 510.

[0122] In other words, while the outer barrier 430 separates adjacent sub-pixels PXn and prevents ink from spilling onto adjacent sub-pixels PXn during the inkjet process, the inner barriers 410 and 420 have protruding structures in each sub-pixel PXn to act as reflective barriers that cause light emitted from the light-emitting device 300 to be reflected directionally onto the first insulating layer 510. However, the disclosure is not limited thereto. The inner barriers 410 and 420 and the outer barrier 430 may include, but are not limited to, polyimide (PI).

[0123] Electrodes 210 and 220 may be disposed on the first insulating layer 510 and the inner embankments 410 and 420. As described above, each of electrodes 210 and 220 includes an electrode main body 210S or 220S and an electrode branch 210B or 220B. Figure 3 The line Xa-Xa' is the line that passes through the main body 210S of the first electrode. Figure 3 The line Xb-Xb' is a line that passes through the first electrode branch 210B and the second electrode branch 220B, and Figure 3 The line Xc-Xc' is the line that passes through the main stem 220S of the second electrode. That is to say, it can be understood that it is set by... Figure 4 The first electrode 210 in the region indicated by line Xa-Xa' is the first electrode main stem 210S, which is set by... Figure 4 The first electrode 210 and the second electrode 220 in the region indicated by the line Xb-Xb' are respectively the first electrode branch 210B and the second electrode branch 220B, and are disposed in the region indicated by the line Xb-Xb'. Figure 4 The second electrode 220 in the region indicated by line Xc-Xc' is the second electrode main body 220S. The electrode main bodies 210S and 220S, as well as the electrode branches 210B and 220B, can respectively form the first electrode 210 and the second electrode 220.

[0124] Each of the first electrode 210 and the second electrode 220 may have a portion disposed on the first insulating layer 510 and a portion disposed on the first inner dam 410 or the second inner dam 420. That is, the width of the first electrode 210 and the second electrode 220 may be greater than the width of the inner dams 410 and 420. A portion of the lower surface of each of the first electrode 210 and the second electrode 220 may contact the first insulating layer 510, and another portion may contact the inner dam 410 or 420.

[0125] Although not shown in the accompanying drawings, the main electrode branches 210S and 220S of the first electrode 210 and the second electrode 220 extending in the first direction DR1 may partially overlap with the first inner bank 410 and the second inner bank 420. However, the disclosure is not limited thereto, and the main electrode branches 210S and 220S may also not overlap with the first inner bank 410 and the second inner bank 420.

[0126] A first electrode contact hole CNTD, penetrating the first insulating layer 510 to expose a portion of the first conductive wiring 191, can be formed in the first electrode backbone 210S of the first electrode 210. The first electrode 210 can contact the first conductive wiring 191 through the first electrode contact hole CNTD. The first electrode 210 can be electrically connected to the first source electrode 123 of the first transistor 120 to receive electrical signals.

[0127] A second electrode contact hole CNTS, penetrating the first insulating layer 510 to expose a portion of the second conductive wiring 192, can be formed in the second electrode main body 220S of the second electrode 220. The second electrode 220 can contact the second conductive wiring 192 through the second electrode contact hole CNTS. The second electrode 220 can be electrically connected to the power supply electrode 162 to receive electrical signals.

[0128] A portion of the first electrode 210 and the second electrode 220 (e.g., the first electrode branch 210B and the second electrode branch 220B) may respectively cover the first inner dam 410 and the second inner dam 420. The first inner dam 410 and the second inner dam 420 may be spaced apart to face each other, and a plurality of light-emitting devices 300 may be disposed between the first inner dam 410 and the second inner dam 420.

[0129] Each of electrodes 210 and 220 may include a transparent conductive material. For example, each of electrodes 210 and 220 may include a material such as indium tin oxide (ITO), indium zinc oxide (IZO), or indium tin zinc oxide (ITZO). However, the disclosure is not limited thereto. In some embodiments, each of electrodes 210 and 220 may include a conductive material with high reflectivity. For example, each of electrodes 210 and 220 may include a metal such as silver (Ag), copper (Cu), or aluminum (Al) as a material with high reflectivity. In this case, each of electrodes 210 and 220 may reflect incident light in the upward direction of each sub-pixel PXn.

[0130] Additionally, each of electrodes 210 and 220 may have a structure in which the transparent conductive material and the highly reflective metal layer are stacked in one or more layers, or may be formed as a single layer comprising them. In embodiments, each of electrodes 210 and 220 may have a stacked structure of ITO / Ag / ITO / IZO, or may be an alloy comprising aluminum (Al), nickel (Ni), lanthanum (La), etc. However, the disclosure is not limited thereto.

[0131] A second insulating layer 520 is disposed on the first insulating layer 510, the first electrode 210, and the second electrode 220. The second insulating layer 520 partially covers the first electrode 210 and the second electrode 220. The second insulating layer 520 may cover most of the upper surfaces of the first electrode 210 and the second electrode 220, but may include openings (not shown) that partially expose the first electrode 210 and the second electrode 220. The openings of the second insulating layer 520 may be positioned to expose the relatively flat upper surfaces of the first electrode 210 and the second electrode 220.

[0132] In some embodiments, the second insulating layer 520 may be stepped, such that a portion of the upper surface of the second insulating layer 520 is recessed between the first electrode 210 and the second electrode 220. In some embodiments, the second insulating layer 520 may comprise an inorganic insulating material, and a portion of the upper surface of the second insulating layer 520 covering the first electrode 210 and the second electrode 220 is recessed due to the step formed by the electrodes 210 and 220 disposed below the second insulating layer 520. The light-emitting device 300 disposed on the second insulating layer 520 between the first electrode 210 and the second electrode 220 may form an empty space with the recessed upper surface of the second insulating layer 520. The light-emitting device 300 may be partially spaced from the upper surface of the second insulating layer 520, and the empty space may be filled with a material forming the third insulating layer 530, which will be described later.

[0133] However, this disclosure is not limited thereto. The second insulating layer 520 may also form a flat upper surface, allowing the light-emitting device 300 to be disposed on the flat upper surface. The upper surface may extend in a direction toward the first electrode 210 and the second electrode 220, and may terminate on the inclined side surfaces of the first electrode 210 and the second electrode 220. That is, the second insulating layer 520 may be disposed in the regions where the electrodes 210 and 220 overlap with the inclined side surfaces of the first inner dam 410 and the second inner dam 420, respectively. The contact electrode 260, which will be described later, may contact the exposed areas of the first electrode 210 and the second electrode 220, and may smoothly contact the end of the light-emitting device 300 on the flat upper surface of the second insulating layer 520.

[0134] The second insulating layer 520 protects the first electrode 210 and the second electrode 220 while insulating them from each other. Additionally, the second insulating layer 520 prevents the light-emitting device 300 disposed on the second insulating layer 520 from directly contacting other components and thus being damaged. However, the shape and structure of the second insulating layer 520 are not limited thereto.

[0135] The light-emitting device 300 may be disposed on the second insulating layer 520 between electrodes 210 and 220. For example, at least one light-emitting device 300 may be disposed on the second insulating layer 520 disposed between electrode branches 210B and 220B. However, the disclosure is not limited thereto. Although not shown in the figures, at least some of the light-emitting devices 300 disposed in each sub-pixel PXn may be disposed in a region other than the region between electrode branches 210B and 220B. In addition, a portion of each light-emitting device 300 may be stacked with electrodes 210 and 220. The light-emitting device 300 may be disposed on the respective ends of the first electrode branch 210B and the second electrode branch 220B that face each other.

[0136] In each of the light-emitting devices 300, multiple layers may be disposed in a direction horizontal to the first insulating layer 510. Each of the light-emitting devices 300 in the display device 10 according to the embodiment may extend in one direction and may have a structure in which multiple semiconductor layers are sequentially disposed in said one direction. In each of the light-emitting devices 300, a first semiconductor layer 310, an active layer 330, a second semiconductor layer 320, and an electrode layer 370 may be sequentially disposed along said one direction, and an insulating film 380 may surround the outer surface of the above layers. The direction along which the light-emitting devices 300 disposed in the display device 10 extend may be parallel to the first insulating layer 510, and the semiconductor layers included in each of the light-emitting devices 300 may be sequentially disposed in a direction parallel to the upper surface of the first insulating layer 510. However, the disclosure is not limited thereto. In some cases, when the light-emitting devices 300 have different structures, these layers may be disposed in a direction perpendicular to the first insulating layer 510.

[0137] Additionally, one end of each of the light-emitting devices 300 may contact the first contact electrode 261, and the other end may contact the second contact electrode 262. According to an embodiment, the insulating film 380 may not be formed on the end surface of each light-emitting device 300 in the extending direction of the light-emitting device 300, thereby exposing the end surface. Therefore, the exposed area of ​​each of the light-emitting devices 300 may contact the first contact electrode 261 and the second contact electrode 262, which will be described later. However, the disclosure is not limited thereto. In some cases, at least a portion of the insulating film 380 of each light-emitting device 300 may be removed, and the insulating film 380 may be removed to partially expose the side surfaces at both ends of the light-emitting device 300. During the manufacturing process of the display device 10, the insulating film 380 may be partially removed during the formation of a third insulating layer 530 covering the outer surface of each light-emitting device 300. The exposed side surface of each light-emitting device 300 may contact the first contact electrode 261 and the second contact electrode 262. However, the disclosure is not limited thereto.

[0138] A third insulating layer 530 may be disposed on a portion of each light-emitting device 300 disposed between the first electrode 210 and the second electrode 220. The third insulating layer 530 may partially cover the outer surface of the light-emitting device 300. Therefore, the third insulating layer 530 can protect the light-emitting device 300 while fixing it during the manufacturing process of the display device 10. According to an embodiment, the third insulating layer 530 may be disposed on the light-emitting device 300, but one end and the other end of each of the light-emitting devices 300 may be exposed. The exposed end of each of the light-emitting devices 300 may contact the contact electrode 260, and the light-emitting device 300 may receive electrical signals from each of the electrodes 210 and 220. This shape of the third insulating layer 530 can be formed by performing a patterning process on the material forming the third insulating layer 530 using a conventional masking process. The mask used to form the third insulating layer 530 may have a width smaller than the length of each light-emitting device 300, and the material forming the third insulating layer 530 may be patterned to expose both ends of each of the light-emitting devices 300. However, the disclosure is not limited thereto.

[0139] Additionally, in this embodiment, a portion of the material of the third insulating layer 530 may be disposed between the lower surface of the light-emitting device 300 and the second insulating layer 520. The third insulating layer 530 may also be formed to fill the space between the second insulating layer 520 and each light-emitting device 300 formed during the manufacturing process of the display device 10. Therefore, the third insulating layer 530 may be formed to cover the outer surface of each light-emitting device 300. However, the disclosure is not limited thereto.

[0140] In the plan view, the third insulating layer 530 may extend in the second direction DR2 between the first electrode branch 210B and the second electrode branch 220B. For example, the third insulating layer 530 disposed on the first insulating layer 510 may have an island shape or a linear shape in the plan view.

[0141] Each of the first contact electrode 261 and the second contact electrode 262 is disposed on the electrode 210 or 220 and the third insulating layer 530. The third insulating layer 530 may be disposed between the first contact electrode 261 and the second contact electrode 262, and the third insulating layer 530 may insulate the first contact electrode 261 and the second contact electrode 262 from each other to prevent them from making direct contact with each other.

[0142] As described above, the first contact electrode 261 and the second contact electrode 262 can contact at least one end of each light-emitting device 300, and both can be electrically connected to the first electrode 210 or the second electrode 220 to receive electrical signals.

[0143] The first contact electrode 261 can contact the exposed area of ​​the first electrode 210 on the first inner embankment 410, and the second contact electrode 262 can contact the exposed area of ​​the second electrode 220 on the second inner embankment 420. The first contact electrode 261 and the second contact electrode 262 can transmit the electrical signals received from each electrode 210 or 220 to the light-emitting device 300.

[0144] Contact electrode 260 may include a conductive material such as ITO, IZO, ITZO, or aluminum (Al). However, the disclosure is not limited thereto.

[0145] A passivation layer 550 may be disposed on the contact electrode 260 and the third insulating layer 530. The passivation layer 550 may be used to protect the components disposed on the first insulating layer 510 from the influence of the external environment.

[0146] Each of the first insulating layer 510, the second insulating layer 520, the third insulating layer 530, and the passivation layer 550 described above may comprise an inorganic insulating material or an organic insulating material. In an embodiment, the first insulating layer 510, the second insulating layer 520, the third insulating layer 530, and the passivation layer 550 may comprise materials such as silicon oxide (SiO2). x ), silicon nitride (SiN) x ), silicon oxynitride (SiO) x N y Inorganic insulating materials such as aluminum oxide (Al2O3) or aluminum nitride (AlN) are used. Optionally, the first insulating layer 510, the second insulating layer 520, the third insulating layer 530, and the passivation layer 550 may comprise organic insulating materials such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene resin, polyphenylene sulfide resin, benzocyclobutene, calomel resin, siloxane resin, silsesquioxane resin, polymethyl methacrylate, polycarbonate, or polymethyl methacrylate-polycarbonate synthetic resin. However, the disclosure is not limited thereto.

[0147] The display device 10 according to an embodiment may include light-emitting devices 300, each comprising an electrode layer 370 and an insulating film 380 having a thickness greater than a certain level. In each of the light-emitting devices 300 according to the embodiment, during the manufacturing process of the light-emitting device 300 and the manufacturing process of the display device 10, damage to the active layer 330 or removal of the electrode layer 370 can be prevented. Furthermore, the luminous efficiency and luminous reliability of the light-emitting device 300 can be improved. The light-emitting device 300 according to the embodiment will now be described in detail with reference to other accompanying drawings.

[0148] Figure 5 This is a schematic diagram of a light-emitting device according to an embodiment. Figure 6 This is a schematic cross-sectional view of the light-emitting device according to an embodiment.

[0149] The light-emitting device 300 may be a light-emitting diode (LED). Specifically, the light-emitting device 300 may be an inorganic LED having a micrometer or nanometer size and made of inorganic materials. When an electric field is formed in a specific direction between two electrodes facing each other, the inorganic LED can be aligned between the two electrodes, which are then polarized. The light-emitting device 300 can be aligned between the two electrodes by the electric field formed on the electrodes.

[0150] The light-emitting device 300 according to an embodiment can extend in one direction. The light-emitting device 300 can be shaped like a rod, wire, tube, etc. In an embodiment, the light-emitting device 300 can be shaped like a cylinder or rod. However, the shape of the light-emitting device 300 is not limited to this; the light-emitting device 300 can also have various shapes including polygonal prisms (such as cubes, cuboids, and hexagonal prisms) and shapes extending in one direction and having a partially inclined outer surface. Multiple semiconductors included in the light-emitting device 300, which will be described later, can be sequentially arranged or stacked along said one direction.

[0151] The light-emitting device 300 may include a semiconductor layer doped with impurities of any conductivity type (e.g., p-type or n-type). The semiconductor layer can receive electrical signals from an external power source and emit light of a specific wavelength.

[0152] The light-emitting device 300 according to an embodiment can emit light in a specific wavelength range. In an embodiment, the active layer 330 can emit blue light with a center wavelength range of 450 nm to 495 nm. However, the center wavelength range of blue light is not limited to the above range and should be understood to include all wavelength ranges that can be considered blue in the art to which this disclosure pertains. Furthermore, the light emitted from the active layer 330 of the light-emitting device 300 is not limited to blue light, and can also be green light with a center wavelength range of 495 nm to 570 nm or red light with a center wavelength range of 620 nm to 752 nm. The light-emitting device 300 emitting blue light will be described below as an example.

[0153] Reference Figure 5 and Figure 6 The light-emitting device 300 may include a semiconductor core and an insulating film 380 surrounding the semiconductor core. The semiconductor core of the light-emitting device 300 may include a first semiconductor layer 310, a second semiconductor layer 320, and an active layer 330. In addition, the light-emitting device 300 according to the embodiment may also include an electrode layer 370 disposed on the surface of the first semiconductor layer 310 or the second semiconductor layer 320.

[0154] The first semiconductor layer 310 may be an n-type semiconductor. In this example, when the light-emitting device 300 emits blue-band light, the first semiconductor layer 310 may include a semiconductor with the chemical formula Al. xGa y In 1-x-y The first semiconductor layer 310 is an N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) semiconductor material, such as any one or more of n-type doped AlGaInN, GaN, AlGaN, InGaN, AlN, and InN. The first semiconductor layer 310 may be doped with an n-type dopant, and the n-type dopant may be, for example, Si, Ge, Se, or Sn. In an embodiment, the first semiconductor layer 310 may be n-GaN doped with n-type Si. The length of the first semiconductor layer 310 may be in the range of, but is not limited to, 1.5 μm to 5 μm.

[0155] The first semiconductor layer 310 according to an embodiment may include a first portion 311 and a second portion 315. The first semiconductor layer 310 may include a first portion 311 extending in one direction and a second portion 315 formed on the surface of the first portion 311 and having a diameter larger than the diameter of the first portion 311. The first portion 311 and the second portion 315 are so named to define a portion of the first semiconductor layer 310. They are not formed as separate layers, but are integrally formed to form a single first semiconductor layer 310. As described above, the two ends of the light-emitting device 300 may have different diameters, and at the end with the larger diameter, the area in contact with the contact electrodes 261 or 262 of the display device 10 may be larger. The light-emitting device 300 may include a second portion 315 formed on the surface of the first semiconductor layer 310, and the second portion 315 may have a diameter larger than the diameter of the first portion 311 and other semiconductor layers or active layers 330. This will be described in more detail later with reference to other figures.

[0156] A second semiconductor layer 320 is disposed on the active layer 330, which will be described later. The second semiconductor layer 320 may be a p-type semiconductor. In the example, when the light-emitting device 300 emits light in the blue or green band, the second semiconductor layer 320 may include a semiconductor with the chemical formula Al. x Ga y In 1-x-y The semiconductor material is N (0≤x≤1, 0≤y≤1, 0≤x+y≤1), for example, any or more of p-type doped AlGaInN, GaN, AlGaN, InGaN, AlN, and InN. The second semiconductor layer 320 may be doped with a p-type dopant, and the p-type dopant may be, for example, Mg, Zn, Ca, or Ba. In an embodiment, the second semiconductor layer 320 may be p-GaN doped with p-type Mg. The length of the second semiconductor layer 320 may be in the range of, but is not limited to, 0.05 μm to 0.10 μm.

[0157] Although each of the first semiconductor layer 310 and the second semiconductor layer 320 consists of a single layer in the accompanying drawings, the disclosure is not limited thereto. According to some embodiments, each of the first semiconductor layer 310 and the second semiconductor layer 320 may include more layers depending on the material of the active layer 330, for example, it may also include a cladding layer or a tensile strain barrier reduction (TSBR) layer. This will be described later with reference to other accompanying drawings.

[0158] An active layer 330 is disposed between a first semiconductor layer 310 and a second semiconductor layer 320. The active layer 330 may comprise a material having a single quantum well structure or a multi-quantum well structure. When the active layer 330 comprises a material having a multi-quantum well structure, it may have a structure in which multiple quantum layers and multiple well layers are alternately stacked. The active layer 330 emits light according to the electrical signal received through the first semiconductor layer 310 and the second semiconductor layer 320 via the recombination of electron-hole pairs. For example, when the active layer 330 emits light in the blue wavelength range, it may comprise a material such as AlGaN or AlGaInN. In particular, when the active layer 330 has a multi-quantum well structure in which quantum layers and well layers are alternately stacked, the quantum layers may comprise a material such as AlGaN or AlGaInN, and the well layers may comprise a material such as GaN or AlInN. In an embodiment, as described above, the active layer 330 may comprise AlGaInN as a quantum layer and AlInN as a well layer to emit blue light in the range of 450 nm to 495 nm.

[0159] However, the disclosure is not limited to this. The active layer 330 may also have a structure in which semiconductor materials with large band gaps and semiconductor materials with small band gaps are stacked alternately, or may include different group III to group V semiconductor materials depending on the wavelength of the emitted light. The light emitted from the active layer 330 is not limited to the blue band. In some cases, the active layer 330 may emit red or green band light. The length of the active layer 330 may be in the range of, but is not limited to, 0.05 μm to 0.10 μm.

[0160] The light emitted from the active layer 330 can illuminate not only the longitudinally extending outer surface of the light-emitting device 300, but also both side surfaces. The direction of the light emitted from the active layer 330 is not limited to one direction.

[0161] Electrode layer 370 may be an ohmic contact electrode. However, the disclosure is not limited thereto, and electrode layer 370 may also be a Schottky contact electrode. Light-emitting device 300 may include at least one electrode layer 370. Although in Figure 6The light-emitting device 300 includes an electrode layer 370, but the disclosure is not limited thereto. In some cases, the light-emitting device 300 may include more electrode layers 370, or the electrode layer 370 may be omitted. Even if the number of electrode layers 370 is changed or another structure is further included, the following description of the light-emitting device 300 shall apply equally.

[0162] When the light-emitting device 300 is electrically connected to an electrode or a contact electrode in the display device 10 according to the embodiment, the electrode layer 370 can reduce the resistance between the light-emitting device 300 and the electrode or between the light-emitting device 300 and the contact electrode. The electrode layer 370 may include a conductive metal. For example, the electrode layer 370 may include at least one of aluminum (Al), titanium (Ti), indium (In), gold (Au), silver (Ag), indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin zinc oxide (ITZO). Additionally, the electrode layer 370 may include an n-type or p-type doped semiconductor material. The electrode layer 370 may include the same material or different materials. The length of the electrode layer 370 may be in the range of, but is not limited to, 0.02 μm to 0.01 μm.

[0163] An insulating film 380 surrounds the outer surface of the semiconductor core and electrode layer 370. In an embodiment, the insulating film 380 may surround at least the outer surface of the active layer 330 and extend in the direction along which the light-emitting device 300 extends. The insulating film 380 can protect the above components. For example, the insulating film 380 may surround the side surfaces of the above components, but the light-emitting device 300 may be exposed at both ends in the longitudinal direction.

[0164] In the accompanying drawings, the insulating film 380 extends in the longitudinal direction of the light-emitting device 300 to cover the side surface of the first portion 311 of the first semiconductor layer 310 to the side surface of the electrode layer 370. However, the disclosure is not limited thereto; the insulating film 380 may also cover only some of the semiconductor layers and the outer surface of the active layer 330, or may cover only a portion of the outer surface of each electrode layer 370, so that the outer surface of the electrode layer 370 is partially exposed. Additionally, in a cross-section of the region adjacent to at least one end of the light-emitting device 300, the upper surface of the insulating film 380 may be circular.

[0165] The insulating film 380 may include, for example, silicon oxide (SiO2). x ), silicon nitride (SiN) x ), silicon oxynitride (SiO) x N yMaterials with insulating properties, such as aluminum nitride (AlN) or aluminum oxide (Al2O3), are used. Therefore, the insulating film 380 can prevent electrical short circuits that may occur when the active layer 330 directly contacts the electrodes through which electrical signals are transmitted to the light-emitting device 300. Additionally, the insulating film 380 can prevent a decrease in luminous efficiency by protecting the outer surface of the light-emitting device 300, including the active layer 330.

[0166] Additionally, in some embodiments, the outer surface of the insulating film 380 can be treated. When manufacturing the display device 10, the light-emitting device 300 can be sprayed onto the electrode while dispersed in a predetermined ink, and then aligned. Here, the surface of the insulating film 380 can be hydrophobically or hydrophilically treated so that the light-emitting device 300 remains separated from other adjacent light-emitting devices 300 in the ink, and does not aggregate with them.

[0167] The insulating film 380 protects the semiconductor core of the light-emitting device 300, including at least the active layer 330. As described above, during the manufacturing processes of the light-emitting device 300 and the display device 10, the insulating film 380 can be partially etched to have a reduced thickness. When the insulating film 380 has a thin thickness, it may be etched away during the manufacturing process, or the semiconductor core (specifically, the active layer 330) may be damaged. To prevent this, the insulating film 380 of the light-emitting device 300 according to the embodiment can have a thickness greater than a certain level. In the embodiment, the thickness of the insulating film 380 can be in the range of, but is not limited to, 10 nm to 1.0 μm. The thickness of the insulating film 380 can preferably be about 40 nm.

[0168] The length of the light-emitting device 300 can be in the range of 1 μm to 10 μm or 2 μm to 6 μm, and is preferably in the range of 3 μm to 5 μm. Additionally, the diameter of the light-emitting device 300 can be in the range of 300 nm to 700 nm, and the aspect ratio of the light-emitting device 300 can be 1.2 to 100. However, the disclosure is not limited to this; multiple light-emitting devices 300 included in the display device 10 can also have different diameters depending on the composition of the active layer 330. The diameter of the light-emitting device 300 can preferably be about 600 nm.

[0169] As described above, the first semiconductor layer 310 may include a first portion 311 and a second portion 315 having a diameter larger than that of the first portion 311, and the insulating film 380 may be disposed only on the outer surface of the first portion 311. Therefore, the outer surface of the second portion 315 may be exposed and may contact the contact electrodes 261 or 262 of the display device 10. The first portion 311 and the second portion 315 of the first semiconductor layer 310 will now be described in detail with reference to other figures.

[0170] Figure 7 yes Figure 6 A magnified view of part of the QL.

[0171] Reference Figures 5 to 7 The first portion 311 of the first semiconductor layer 310 may extend in the same direction as the direction along which the light-emitting device 300 extends. The cross-section of the first portion 311 extending in said direction may have a flat outer surface. In some embodiments, the first portion 311 may be shaped like a cylinder or rod. However, the disclosure is not limited thereto. An insulating film 380, which will be described later, may be disposed on the outer surface of the first portion 311 such that the first portion 311 does not contact the contact electrodes 261 or 262 of the display device 10.

[0172] A second portion 315 of the first semiconductor layer 310 can be connected to the surface of the first portion 311. The second portion 315 can be disposed in the opposite direction to the active layer 330 disposed on the first semiconductor layer 310, such that the upper surface of the second portion 315 is connected to the first portion 311. Unlike the first portion 311, the second portion 315 of the first semiconductor layer 310 can have exposed lower and side surfaces. As described above, the insulating film 380 of the light-emitting device 300 can surround the first portion 311 of the first semiconductor layer 310 and the side surface of the active layer 330, but may not be disposed on the side surface of the second portion 315. Since the first semiconductor layer 310 also includes the second portion 315, the light-emitting device 300 can include exposed areas where the insulating film 380 is not disposed. Therefore, the light-emitting device 300 can contact the contact electrodes (e.g., the second contact electrode 262) of the display device 10 with a large area. As a result of forming the second portion 315 simultaneously with or after the process of forming the insulating film 380, the light-emitting device 300 can be constructed as described above. This will be described later.

[0173] According to an embodiment, in the first semiconductor layer 310 of the light-emitting device 300, the diameter of the second portion 315 may be larger than the diameter of the first portion 311, and the second portion 315 may have an inclined outer surface. In the semiconductor core of the light-emitting device 300, multiple semiconductor layers 310 and 320 and an active layer 330 may be stacked on a third direction DR3, and the first portion 311 and the second portion 315 of the first semiconductor layer 310 may have different diameters measured in a fourth direction DR4 perpendicular to the third direction DR3. Furthermore, the two ends of the light-emitting device 300 may have different diameters measured in the fourth direction DR4.

[0174] The first portion 311 of the first semiconductor layer 310 may have a first diameter W1 measured in the fourth direction DR4, and the upper surface of the second portion 315 may have a second diameter W2 measured in the fourth direction DR4. Additionally, one end of the light-emitting device 300 where the electrode layer 370 or the second semiconductor layer 320 is located may have a third diameter W3 measured in the fourth direction DR4, and the other end of the light-emitting device 300 where the second portion 315 of the first semiconductor layer 310 is located may have a fourth diameter W4 measured in the fourth direction DR4.

[0175] According to an embodiment, the first diameter W1 of the first portion 311 of the first semiconductor layer 310 may be smaller than the second diameter W2 of the upper surface of the second portion 315. In the first semiconductor layer 310, since the first portion 311 and the upper surface of the second portion 315 connected to the first portion 311 have different diameters, a step can be formed in the portion where the first portion 311 and the second portion 315 are connected. In an embodiment, the second diameter W2 of the upper surface of the second portion 315 of the first semiconductor layer 310 may be equal to the sum of the first diameter W1 of the first portion 311 and the thickness of the insulating film 380.

[0176] like Figure 7 As shown, the insulating film 380 can be formed on the outer surface of the first portion 311 of the first semiconductor layer 310, and the lower surface of the insulating film 380 can contact the region where the first portion 311 and the second portion 315 are connected. Therefore, a step can be formed between the first portion 311 and the second portion 315 of the first semiconductor layer 310 of the light-emitting device 300, but it may not be formed between the outer surface of the light-emitting device 300 (i.e., the outer surface of the insulating film 380 and the outer surface of the second portion 315). As described above, this structure can be obtained because the insulating film 380 and the second portion 315 of the first semiconductor layer 310 are formed in the same process during the manufacturing process of the light-emitting device 300. This will be described in more detail later with reference to other figures.

[0177] Furthermore, according to the embodiment, the second diameter W2 of the upper surface of the second portion 315 of the first semiconductor layer 310 can be smaller than the fourth diameter W4 of the lower surface, and the second portion 315 can have inclined side surfaces. In the second portion 315 of the first semiconductor layer 310, the fourth diameter W4 of the lower surface can be larger than the second diameter W2 of the upper surface to ensure a large contact area between the light-emitting device 300 and the contact electrode 261 or 262. Therefore, the cross-section of the second portion 315 of the first semiconductor layer 310 can have inclined side surfaces. Since the side surfaces and lower surfaces of the second portion 315 are exposed without an insulating film 380 disposed thereon, the second portion 315 can contact the contact electrode 261 or 262 of the display device 10 at the side surfaces and lower surfaces.

[0178] The diameters of one end and the other end of the light-emitting device 300 can be adjusted according to the contact area with the required contact electrodes 261 and 262 of the light-emitting device 300 to achieve high luminous efficiency. For example, the fourth diameter W4 of the lower surface of the second portion 315 can be 1.25 to 1.8 times the first diameter W1 of the first portion 311 of the first semiconductor layer 310. In an embodiment, the first diameter W1 of the first portion 311 of the first semiconductor layer 310 can be in the range of 500 nm to 600 nm, and the fourth diameter W4 of the lower surface of the second portion 315 can be in the range of 750 nm to 900 nm. Therefore, the included angle θ formed by the lower surface and the side surface of the second portion 315 can be 65 degrees to 80 degrees (preferably, about 70 degrees).

[0179] Additionally, the height ha of the second portion 315 of the first semiconductor layer 310 can be adjusted by the fourth diameter W4 and the included angle θ between the lower surface and the side surface of the second portion 315. In some embodiments, the height ha of the second portion 315 can be approximately 10% of the length h of the light-emitting device 300. For example, when the length h of the light-emitting device 300 is approximately 4 μm, the height ha of the second portion 315 can be approximately 400 nm. However, the disclosure is not limited thereto. The included angle θ between the lower surface of the second portion 315 and each side surface of the second portion 315, as well as the height ha of the second portion 315, can be varied by changing the manufacturing process of the light-emitting device 300 according to the contact area with the contact electrodes 261 or 262.

[0180] Because the first semiconductor layer 310 of the light-emitting device 300 has a large diameter, the fourth diameter W4 at the other end of the light-emitting device 300 according to the embodiment can be larger than the third diameter W3 at one end of the light-emitting device 300. One end and the other end of the light-emitting device 300 can have different diameters, and the second portion 315 of the first semiconductor layer 310 on which the insulating film 380 is not disposed can contact the contact electrode 260 of the display device 10 through a large area.

[0181] Figure 8 yes Figure 4 A magnified view of part of the QA section.

[0182] Figure 8 This is an enlarged cross-sectional view of the light-emitting device 300 disposed between the first electrode 210 and the second electrode 220 in the display device 10. (Refer to...) Figure 8The light-emitting device 300 can be disposed on the second insulating layer 520 between the first electrode 210 and the second electrode 220. The light-emitting device 300 may include one end where the second portion 315 of the first semiconductor layer 310 is located and the other end where the electrode layer 370 or the second semiconductor layer 320 is located. The one end can contact the second contact electrode 262, and the other end can contact the first contact electrode 261. The first contact electrode 261 and the second contact electrode 262 can contact the insulating film 380, the electrode layer 370, and the first semiconductor layer 310 of the light-emitting device 300.

[0183] The light-emitting device 300 may include a side surface that serves as the lower surface in cross-section and another side surface that serves as the upper surface of the outer surface of the insulating film 380. The one side surface may contact the second insulating layer 520 and the third insulating layer 530 disposed below the light-emitting device 300, and the other side surface may contact the third insulating layer 530 disposed on the light-emitting device 300 and the contact electrode 260.

[0184] The side surface that serves as the lower surface of the light-emitting device 300 can contact the second insulating layer 520 and can also contact the third insulating layer 530 in the space formed and filled by the partial recess of the second insulating layer 520. During the manufacturing process of the display device 10, the side surface that serves as the lower surface of the light-emitting device 300 may not be etched in the cross-section. Therefore, the surface in contact with the second insulating layer 520 and the third insulating layer 530 can be formed as a flat surface.

[0185] The other side surface, which serves as the upper surface of the light-emitting device 300 in cross-section, can contact the contact electrode 260 and the third insulating layer 530. Although the insulating film 380 on the other side surface of the light-emitting device 300 forms a flat surface in the figures, the disclosure is not limited thereto. In some embodiments, the insulating film 380 of the light-emitting device 300 may be partially etched in an etching process performed prior to the process of forming the contact electrode 260.

[0186] The display device 10 may include a plurality of contact surfaces, at which the light-emitting device 300 contacts the contact electrodes 261 and 262 or the second insulating layer 520. For example, the contact surfaces may include a first contact surface S1 where the second contact electrode 262 contacts the lower surface of the second portion 315 of the first semiconductor layer 310, a second contact surface S2 where the second contact electrode 262 contacts the side surface of the second portion 315, a third contact surface S3 where the second insulating layer 520 contacts the side surface of the second portion 315, and a fourth contact surface S4 where the first contact electrode 261 contacts the upper surface of the electrode layer 370.

[0187] The contact surfaces of the light-emitting device 300 with the contact electrodes 261 and 262 may include surfaces substantially perpendicular to the upper surface of the substrate or the first insulating layer 510 and surfaces not perpendicular to the upper surface of the substrate or the first insulating layer 510. For example, the first contact surface S1 and the fourth contact surface S4 may be formed substantially perpendicular to the upper surface of the first insulating layer 510, but the second contact surface S2 may be formed not perpendicular to the upper surface of the first insulating layer 510. Since the second portion 315 of the light-emitting device 300 has an inclined side surface, its contact surfaces with the contact electrodes 261 and 262 may also be inclined. However, the disclosure is not limited thereto.

[0188] Furthermore, the contact surfaces of the second contact electrode 262 and the first semiconductor layer 310 of the light-emitting device 300 may not be parallel to each other. The second contact electrode 262 and the first semiconductor layer 310 may form a first contact surface S1 and a second contact surface S2. The first contact surface S1 is a surface formed by the lower surface of the second portion 315 of the first semiconductor layer 310, and the second contact surface S2 is a surface formed by the side surface of the second portion 315. In the light-emitting device 300 according to the embodiment, since the side surface of the second portion 315 of the first semiconductor layer 310 is inclined, the side surface of the second portion 315 is neither parallel to nor perpendicular to the lower surface. Therefore, the second contact surface S2 of the second portion 315 that contacts the second contact electrode 262 may be inclined relative to the first contact surface S1.

[0189] According to an embodiment, in the display device 10, the contact area between one end surface of the light-emitting device 300 and the second contact electrode 262 can be larger than the contact area between the other end surface of the light-emitting device 300 and the first contact electrode 261. The one end surface of the light-emitting device 300 can be the lower surface of the second portion 315 of the first semiconductor layer 310, and can have... Figure 6 The fourth diameter W4 is shown in the diagram. The other end surface of the light-emitting device 300 can be the upper surface of the electrode layer 370, and can be connected to, for example, the electrode layer 370. Figure 6 The first portion 311 of the first semiconductor layer 310 shown in the figure has a first diameter W1. As described above, the fourth diameter W4 can be larger than the first diameter W1, and the first contact surface S1, which serves as the contact surface between one end surface of the light-emitting device 300 and the second contact electrode 262, can have a larger area than the fourth contact surface S4, which serves as the contact surface between the other end surface and the first contact electrode 261.

[0190] The light-emitting device 300 can receive electrical signals through the surfaces of the semiconductor core that contact the first contact electrode 261 and the second contact electrode 262. That is, electrical signals can be received through the surfaces of the first semiconductor layer 310 and the electrode layer 370 constituting the semiconductor core that contact the contact electrodes 261 and 262 (i.e., through the first contact surface S1, the second contact surface S2, and the fourth contact surface S4 at both ends of the light-emitting device 300). In the display device 10 according to the embodiment, the electrode layer 370 can be disposed at the other end of the light-emitting device 300 that contacts the first contact electrode 261 to reduce contact resistance, and the end of the light-emitting device 300 that contacts the second contact electrode 262 can include a second portion 315 with a large diameter to increase the contact area, thereby reducing contact resistance. Furthermore, at the end of the light-emitting device 300, the side surface of the second portion 315 can contact the second contact electrode 262, increasing the contact area between the light-emitting device 300 and the second contact electrode 262 and reducing the contact resistance. Therefore, the electrical characteristics and luminous efficiency of the light-emitting device 300 can be improved.

[0191] The second contact electrode 262 can contact the insulating film 380 of the light-emitting device 300 (see...). Figure 8 (SE in the text). However, the disclosure is not limited thereto; depending on the shape of the third insulating layer 530, the second contact electrode 262 may not contact the insulating film 380. This will be described with reference to another embodiment.

[0192] The display device 10 may include a greater number of insulating layers. According to an embodiment, the display device 10 may further include a fourth insulating layer 540 configured to protect the first contact electrode 261 (see [link to embodiment]). Figure 9 ).

[0193] Figure 9 This is a cross-sectional view of a portion of a display device according to an embodiment.

[0194] Reference Figure 9 The display device 10 according to the embodiment may further include a fourth insulating layer 540 disposed on the first contact electrode 261. The display device 10 according to the current embodiment and... Figure 4 The difference between the display device 10 and the one described in the present embodiment is that the display device 10 also includes a fourth insulating layer 540, and therefore at least a portion of the second contact electrode 262 is disposed on the fourth insulating layer 540. Therefore, any redundant description will be omitted, and the differences will be described primarily below.

[0195] Figure 9The display device 10 may include a fourth insulating layer 540, which is disposed on the first contact electrode 261 and electrically insulates the first contact electrode 261 from the second contact electrode 262. The fourth insulating layer 540 may cover the first contact electrode 261, but may not contact a portion of the light-emitting device 300, allowing the light-emitting device 300 to be connected to the second contact electrode 262. The fourth insulating layer 540 may be disposed on the upper surface of the third insulating layer 530 to partially contact the first contact electrode 261 and the third insulating layer 530. The fourth insulating layer 540 may cover the end of the first contact electrode 261 on the third insulating layer 530. Therefore, the fourth insulating layer 540 protects the first contact electrode 261 while electrically insulating it from the second contact electrode 262.

[0196] The side surface of the fourth insulating layer 540 in the direction where the second contact electrode 262 is disposed may be aligned with the side surface of the third insulating layer 530. However, the disclosure is not limited thereto. In some embodiments, like the second insulating layer 520, the fourth insulating layer 540 may comprise an inorganic insulating material.

[0197] The first contact electrode 261 can be disposed between the first electrode 210 and the fourth insulating layer 540, and the second contact electrode 262 can be disposed on the fourth insulating layer 540. The second contact electrode 262 can partially contact the second insulating layer 520, the third insulating layer 530, the fourth insulating layer 540, the second electrode 220, and the light-emitting device 300. The end of the second contact electrode 262 in the direction where the first electrode 210 is disposed can be disposed on the fourth insulating layer 540.

[0198] A passivation layer 550 may be disposed on the fourth insulating layer 540 and the second contact electrode 262 to protect them. Redundant descriptions will be omitted below.

[0199] The process for manufacturing the light-emitting device 300 according to an embodiment will now be described.

[0200] Figure 10 This is a flowchart illustrating a method for manufacturing a light-emitting device according to an embodiment.

[0201] Reference Figure 10The method for manufacturing a light-emitting device 300 according to an embodiment may include: preparing a substrate and forming a semiconductor structure disposed on the substrate and including a first semiconductor (operation S100); forming a plurality of holes exposing a portion of the first semiconductor and a semiconductor crystal including a portion of the first semiconductor and spaced apart from each other by partially etching the semiconductor structure (operation S200); and forming an insulating film disposed on the outer surface of the semiconductor crystal and the exposed portion of the first semiconductor and separating the device rod formed by etching the insulating film and the first semiconductor stacked with the plurality of holes from the substrate (operation S300).

[0202] In order to manufacture the light-emitting device 300 according to the embodiment, a semiconductor structure 3000 is formed and partially etched (see Figure 12 ) to form semiconductor crystal 3000' (see Figure 13 Each semiconductor crystal 3000' includes a first portion 311 of a first semiconductor layer 310. Then, an insulating film 3800 is formed around the outer surface of the semiconductor crystal 3000' (see...). Figure 14 Then, the insulating film 3800 and the semiconductor layer beneath it are etched to form a second portion 315 of the insulating film 380 and the first semiconductor layer 310. In each of the light-emitting devices 300, in the process of simultaneously forming the second portion 315 of the insulating film 380 and the first semiconductor layer 310, the second portion 315 can be formed to have a diameter larger than that of the first portion 311. The method of manufacturing the light-emitting device 300 will now be described in detail with reference to other figures.

[0203] Figures 11 to 16 This is a cross-sectional view illustrating the process of manufacturing a light-emitting device according to an embodiment.

[0204] First, refer to Figure 11 A lower substrate 1000 is prepared, comprising a substrate 1100 and a buffer material layer 1200 formed on the substrate 1100. The substrate 1100 may comprise a sapphire substrate (Al2O3) or a transparent substrate such as glass. However, the disclosure is not limited thereto, and the substrate 1100 may also be made of a conductive substrate such as GaN, SiC, ZnO, Si, GaP, or GaAs. The case where the substrate 1100 is a sapphire substrate (Al2O3) will be described below as an example. The thickness of the substrate 1100 is not particularly limited, but may be in the range of, for example, 400 μm to 1500 μm.

[0205] Multiple semiconductor layers are formed on the substrate 1100. Semiconductor layers grown by epitaxial methods can be formed by growing seed crystals. Here, the method for forming the semiconductor layers can be electron beam deposition, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-mode thermal evaporation, sputtering, or metal-organic chemical vapor deposition (MOCVD), and is preferably MOCVD, but the disclosure is not limited thereto.

[0206] The precursor materials used to form the semiconductor layer are not particularly limited to a range of materials that can generally be selected to form the target material. For example, the precursor materials may include metal precursors, which include alkyl groups such as methyl or ethyl. For example, the metal precursor may be, but is not limited to, compounds such as trimethylgallium (Ga(CH3)3), trimethylaluminum (Al(CH3)3), or triethyl phosphate (C2H5)3PO4. The methods or process conditions for forming the semiconductor layer will not be described below, but the sequence of methods for manufacturing the light-emitting device 300 and the stacked structure of each light-emitting device 300 will be described in detail.

[0207] A buffer material layer 1200 is formed on the substrate 1100. Although the buffer material layer 1200 is shown as a single layer in the figures, the disclosure is not limited thereto, and multiple layers may be formed. The buffer material layer 1200 may be provided to reduce the difference in lattice constant between the first semiconductor 3100 and the substrate 1100.

[0208] For example, the buffer material layer 1200 may include an undoped semiconductor and may include a material substantially the same as that of the first semiconductor 3100, but may be a material undoped of n-type or p-type impurities. In embodiments, the buffer material layer 1200 may be, but is not limited to, at least one of undoped InAlGaN, GaN, AlGaN, InGaN, AlN, and InN. Alternatively, the buffer material layer 1200 may be omitted depending on the substrate 1100. As an example, a case in which a buffer material layer 1200 comprising an undoped semiconductor is formed on the substrate 1100 will be described.

[0209] Next, refer to Figure 12A semiconductor structure 3000 is formed on a lower substrate 1000. The semiconductor structure 3000 may include a first semiconductor 3100, an active layer 3300, a second semiconductor 3200, and an electrode material layer 3700. Multiple material layers included in the semiconductor structure 3000 can be formed by performing conventional processes as described above. The multiple layers included in the semiconductor structure 3000 may correspond respectively to multiple layers of each light-emitting device 300 according to the embodiment. That is, they may include the same materials as the first semiconductor layer 310, active layer 330, second semiconductor layer 320, and electrode layer 370 of each light-emitting device 300.

[0210] Next, refer to Figure 13 A first etching process is performed to partially etch the semiconductor structure 3000 to form holes and semiconductor crystals 3000' spaced apart from each other through the holes. The semiconductor structure 3000 can be etched by conventional methods. For example, the semiconductor structure 3000 can be etched by forming an etching mask layer on the semiconductor structure 3000 and etching the semiconductor structure 3000 along the etching mask layer in a direction perpendicular to the lower substrate 1000.

[0211] For example, the etching process for semiconductor structure 3000 can be dry etching, wet etching, reactive ion etching (RIE), inductively coupled plasma reactive ion etching (ICP-RIE), etc. Because anisotropic etching is possible, dry etching can be applied to vertical etching. When using the above etching methods, the etchant can be, but is not limited to, Cl2 or O2.

[0212] In some embodiments, a combination of dry etching and wet etching can be used to etch the semiconductor structure 3000. For example, dry etching can be used to perform etching in the depth direction, and then wet etching, as isotropic etching, can be performed such that the etched sidewalls lie in a plane perpendicular to the surface.

[0213] Each of the semiconductor crystals 3000' may include an electrode layer 370, a second semiconductor layer 320, an active layer 330, and a first portion 311 of a first semiconductor layer 310, representing a light-emitting device 300. Each hole formed by etching the semiconductor structure 3000 can be formed from the electrode layer 370 to a portion of the first semiconductor 3100. The remaining unetched portion of the first semiconductor 3100' can form a second portion 315 of the first semiconductor layer 310.

[0214] Next, an insulating film 3800 is formed around the outer surface of the semiconductor crystal 3000'.

[0215] Reference Figure 14An insulating film 3800 can be formed on the side and top surfaces of the semiconductor crystal 3000' and on the remaining unetched portion of the first semiconductor 3100. The insulating film 3800 is an insulating material forming the insulating film 380 of each light-emitting device 300, and can be formed by coating or immersing the outer surface of the semiconductor crystal 3000' with an insulating material. However, the disclosure is not limited thereto. For example, the insulating film 3800 can be formed by atomic layer deposition (ALD).

[0216] Next, refer to Figure 14 and Figure 15 A second etching process is performed to partially remove the insulating film 3800 and further etch the remaining unetched first semiconductor 3100 to form a second portion 315 of the first semiconductor layer 310 and the insulating film 380. Therefore, a device rod (ROD) can be formed comprising a semiconductor core and an insulating film 380 surrounding the semiconductor core, the semiconductor core including the first semiconductor layer 310, an active layer 330, etc.

[0217] The process of partially removing the insulating film 3800 can be achieved through processes such as etch-back or dry etching as anisotropic etching. As shown in the figures, the upper surface of the insulating film 3800 can be removed to expose the electrode layer 370, and the remaining unetched first semiconductor 3100' can also be partially etched. However, the insulating film 3800 and the first semiconductor 3100' have different etch selectivity and are etched at different rates. While the insulating film 3800 is partially removed to expose the upper surface of the electrode layer 370, only a portion of the first semiconductor 3100' can be etched to form a sloping side surface. Therefore, a second portion 315 of the first semiconductor layer 310 can be formed in the semiconductor core of each of the device rod RODs.

[0218] A device rod (ROD) can be formed by performing a first etching process for etching the semiconductor structure 3000 and a second etching process for etching the insulating film 3800 and the first semiconductor 3100'. The first and second etching processes can be performed under different process conditions, and the first semiconductor 3100 formed by the above processes can have different shapes. The first semiconductor 3100 etched by the first etching process can form a first portion 311 of the first semiconductor layer 310, and the first semiconductor 3100' etched by the second etching process can form a second portion 315 of the first semiconductor layer 310.

[0219] Although the upper surface of the electrode layer 370 is exposed and the upper surface of the insulating film 380 is flat in the accompanying drawings, the disclosure is not limited thereto. In some embodiments, the outer surface of each insulating film 380 may be partially curved in the region surrounding the electrode layer 370. Since not only the upper surface of the insulating film 3800 but also the side surfaces of the insulating film 3800 are partially removed in the process of partially removing the insulating film 3800, each insulating film 380 surrounding the multiple layers may be formed such that its end surfaces are partially etched. In particular, when removing the upper surface of the insulating film 3800, the outer surface of the insulating film 380 adjacent to the electrode layer 370 in each light-emitting device 300 may be partially removed.

[0220] Finally, as Figure 16 As shown, the light-emitting device 300 is manufactured by separating the device rod ROD, which has a second portion 315 of the first semiconductor layer 310, from the lower substrate 1000.

[0221] The light-emitting device 300 according to the embodiment can be manufactured using the above-described process. The light-emitting device 300 thus manufactured can be disposed between the first electrode 210 and the second electrode 220, and the third insulating layer 530, contact electrode 260, etc., can be placed on the light-emitting device 300 to manufacture the display device 10. The process for manufacturing the display device 10 will now be further described with reference to other accompanying drawings.

[0222] Figures 17 to 19 This is a cross-sectional view showing a portion of the manufacturing process of a display device according to an embodiment.

[0223] First, refer to Figure 17 The process involves preparing a first insulating layer 510, a first inner dam 410 and a second inner dam 420 spaced apart from each other on the first insulating layer 510, a first electrode 210 and a second electrode 220 respectively disposed on the first inner dam 410 and the second inner dam 420, and a second insulating material layer 520' covering the first electrode 210 and the second electrode 220. The second insulating material layer 520' can be partially patterned in subsequent processes to form the second insulating layer 520 of the display device 10. These components can be formed by patterning metals, inorganic materials, organic materials, etc., using conventional masking processes.

[0224] Next, ink 900, including the light-emitting device 300, is sprayed onto the first electrode 210 and the second electrode 220. The ink 900 may include a solvent 910 and the light-emitting device 300 dispersed in the solvent 910. The light-emitting device 300 dispersed in the solvent 910 can be sprayed onto the electrodes 210 and 220, and can be aligned between the first electrode 210 and the second electrode 220 by an electrical signal transmitted in a subsequent process.

[0225] Next, refer to Figure 18 An electric field E is generated on the ink 900, including the light-emitting device 300, by transmitting an electrical signal to the first electrode 210 and the second electrode 220. The light-emitting device 300 can withstand the dielectric force generated by the electric field E, and can be positioned between the first electrode 210 and the second electrode 220 due to the change in the orientation and position of the light-emitting device 300.

[0226] Next, refer to Figure 19 Solvent 910 is removed from ink 900. Therefore, the light-emitting device 300 can be disposed between the first electrode 210 and the second electrode 220, and can be aligned in a specific orientation direction because the light-emitting device 300 is disposed between the first electrode 210 and the second electrode 220.

[0227] Although not shown in the accompanying drawings, a third insulating layer 530 is formed on the light-emitting device 300 in subsequent processes, and the second insulating material layer 520' is patterned to form the second insulating layer 520. Then, a first contact electrode 261, a second contact electrode 262, and a passivation layer 550 are formed to manufacture the display device 10.

[0228] The light-emitting device 300 and display device 10 according to the embodiments can be manufactured as described above. Each of the light-emitting devices 300 according to the embodiments may include a first semiconductor layer 310, the first semiconductor layer 310 including a first portion 311 and a second portion 315 with different diameters, and the two ends of each of the light-emitting devices 300 may have different diameters. In particular, the second portion 315 of the first semiconductor layer 310 may have a diameter larger than the diameter of the electrode layer 370, and the contact electrodes 261 and 262 of the display device 10 and the first semiconductor layer 310 may contact each other through a large area. Therefore, the light-emitting device 300 according to the embodiments may have reduced contact resistance with the contact electrodes 261 and 262 and improved luminous efficiency.

[0229] The light-emitting device 300 and the display device 10 according to various embodiments will now be described.

[0230] Figure 20 This is a cross-sectional view of a portion of a display device according to an embodiment.

[0231] Reference Figure 20In the display device 10 according to an embodiment, the insulating film 380_1 of the light-emitting device 300_1 may not contact the second contact electrode 262_1. As described above, contact electrodes 261_1 and 262_1 may contact both ends of the light-emitting device 300_1. Among them, the second contact electrode 262_1 may contact the first semiconductor layer 310_1 of the light-emitting device 300_1, but a portion of the insulating film 380_1 surrounding the first semiconductor layer 310_1 may not contact the second contact electrode 262_1 depending on the width of the third insulating layer 530_1. According to an embodiment, the second contact electrode 262_1 of the display device 10 may not contact the insulating film 380_1 of the light-emitting device 300_1, but may only contact the second portion 315_1 of the first semiconductor layer 310_1. The current embodiment and Figure 8 The difference in this embodiment is that the second contact electrode 262_1 does not contact the insulating film 380_1. The other components are substantially the same as those described above, and therefore their detailed description will be omitted.

[0232] As described above, the insulating film 380 may include a partially curved upper surface. During the process of manufacturing the light-emitting device 300, in a second etching process for removing the insulating film 3800, the upper surface and side surfaces of the insulating film 3800 may be partially etched. Therefore, the outer surface of the insulating film 380 may be partially curved.

[0233] Figure 21 This is a schematic cross-sectional view of the light-emitting device according to an embodiment. Figure 22 It includes Figure 21 A cross-sectional view of a portion of a display device containing light-emitting devices.

[0234] Reference Figure 21 and Figure 22 According to the embodiment, the light-emitting device 300_2 may include an area in which the insulating film 380_2 has a partially inclined upper surface or upper cross section and has a partially different thickness. Figure 21 The light-emitting device 300_2 and Figure 6 The difference between the light-emitting device 300 and the previous one is that the end surface of the insulating film 380_2 is inclined. The arrangement and structure of the electrode layer 370_2, the first semiconductor layer 310_2, the active layer 330_2, and the second semiconductor layer 320_2 are the same as those of the previous one. Figure 6 The electrode layer 370, the first semiconductor layer 310, the active layer 330 and the second semiconductor layer 320 are arranged and structured the same, so their redundant description will be omitted and the differences will be mainly described below.

[0235] According to an embodiment, the insulating film 380_2 may be configured to expose a portion of the semiconductor core (e.g., a side surface of the electrode layer 370_2), and the end surface of the upper surface of the insulating film 380_2 in the portion exposing the electrode layer 370_2 may be partially tilted. During the process of manufacturing the light-emitting device 300_2, in the process of etching the insulating film 3800, the exposed surface of the outer surface of the electrode layer 370_2 on which the insulating film 380_2 is not disposed may be exposed. Figure 6 In the case of the light-emitting device 300, during the etching process of the insulating film 3800, only the upper surface of the electrode layer 370 is exposed. In other words, in Figure 21 In the light-emitting device 300_2, the side surface of the electrode layer 370_2 can also be partially exposed together with the upper surface of the electrode layer 370_2. As shown in the figure, the side surface of the electrode layer 370_2 may not be fully exposed, but may be partially exposed. Therefore, a portion of the electrode layer 370_2 can contact the insulating film 380_2.

[0236] Because the insulating film 380_2 of the light-emitting device 300_2 has a partially curved outer surface and the outer surface of the electrode layer 370_2 is partially exposed, the first contact electrode 261_2 of the display device 10 can also contact a portion of the side surface of the electrode layer 370_2. For example... Figure 22 As shown, the first contact electrode 261_2 can contact a portion of the side surface of the electrode layer 370_2 of the light-emitting device 300_2 to form a fifth contact surface S5. Figure 8 In the embodiment, in addition to the insulating film 380_2 of the light-emitting device 300_2, the first contact electrode 261_2 can also contact the upper surface and side surface of the electrode layer 370_2, and the contact surface between the first contact electrode 261_2 and the insulating film 380_2 can be partially inclined along the curved outer surface of the insulating film 380_2.

[0237] As described above, during the manufacturing process of the display device 10, the insulating film 380 of the light-emitting device 300 can be partially etched to have a reduced thickness. In this case, the thickness of the insulating film 380 in the light-emitting device 300 included in the display device 10 can be changed according to its position, and the diameter of the light-emitting device 300 can also be changed.

[0238] Figure 23 and Figure 24 This is a cross-sectional view of a portion of a display device including light-emitting devices according to an embodiment.

[0239] Figure 23 It shows that in including Figure 6 In the display device 10 of the light-emitting device 300, the insulating film 380_3 of the light-emitting device 300_3 is partially etched. Figure 24 It shows that in including Figure 21 In the display device 10 of the light-emitting device 300_2, the insulating film 380_4 of the light-emitting device 300_4 is partially etched.

[0240] Reference Figure 23 During the manufacturing process of the display device 10, the insulating film 380_3 that does not contact the third insulating layer 530_3 can be partially etched during the process of forming the third insulating layer 530_3. The outer surface of the light-emitting device 300_3 may include one side surface as the lower surface and another side surface as the upper surface in cross-section. The one side surface may contact the second insulating layer 520 and the third insulating layer 530_3 disposed below the light-emitting device 300_3. Therefore, the insulating film 380_3 located on the lower surface of the light-emitting device 300_3 may not be etched during the manufacturing process of the display device 10.

[0241] In other words, the other side surface of the light-emitting device 300_3, which serves as the upper surface in cross-section, can be partially etched in an etching process performed prior to the formation of contact electrodes 261_3 and 262_3. On this other side surface, except for the portion in contact with the third insulating layer 530_3, the insulating film 380_3 can be etched in the area in contact with contact electrodes 261_3 and 262_3. Therefore, in the display device 10, the insulating film 380_3 of the light-emitting device 300_3 can have different thicknesses depending on its location.

[0242] The insulating film 380_3 may be thinner on the surfaces that contact the first contact electrode 261_3 and the second contact electrode 262_3 than on the surface that contacts the third insulating layer 530_3. In other words, since the portion of the insulating film 380_3 that contacts the third insulating layer 530_3 is not etched during the manufacturing process, the insulating film 380_3 may be thicker on the surfaces that contact the third insulating layer 530_3 than on the surfaces that contact the first contact electrode 261_3 and the second contact electrode 262_3.

[0243] Therefore, the light-emitting device 300_3 can have different diameters depending on its location. For example, in the light-emitting device 300_3, the first diameter Da measured in the region contacting the third insulating layer 530_3 can be larger than the second diameter Db of the region contacting the second contact electrode 262_3 and the third diameter Dc of the region contacting the first contact electrode 261_3. As described above, the insulating film 380_3 of the light-emitting device 300_3 has a thickness greater than a certain level to protect the active layer 330_3 and at least surrounds the active layer 330_3. Even if partially etched during the manufacturing process of the display device 10, the insulating film 380_3 can still have the minimum thickness required to protect the active layer 330_3. In an embodiment, the insulating film 380_3 of the light-emitting device 300_3 disposed in the display device 10 can have a thickness of about 10 nm to 20 nm. The insulating film 380_3 within the above range can prevent the active layer 330_3 from contacting other components, thereby preventing electrical short circuits of the light-emitting device 300_3.

[0244] exist Figure 24 In one embodiment, it is possible to manufacture including Figure 21 During the process of manufacturing the display device 10 with light-emitting device 300_2, the insulating film 380_4 is partially etched. This is consistent with the above reference. Figure 22 and Figure 23 Since the descriptions are identical, their detailed descriptions will be omitted.

[0245] According to some embodiments, the electrode mains 210S and 220S extending in the first direction DR1 can be omitted from the first electrode 210 and the second electrode 220.

[0246] Figure 25 This is a plan view of the sub-pixels of the display device according to an embodiment.

[0247] Reference Figure 25 In the display device 10_5, the first electrode 210_5 and the second electrode 220_5 may extend in one direction (i.e., the second direction DR2). The first electrode 210_5 and the second electrode 220_5 may not include the electrode mains 210S and 220S extending in the first direction DR1. Figure 25 The display device 10_5 and Figure 3 The difference of the display device 10 is that Figure 25 The display device 10_5 does not include the electrode mains 210S and 220S and includes one or more second electrodes 220_5. Along Figure 25 The cross-sections intercepted by lines Xa-Xa', Xb-Xb', and Xc-Xc' can be compared with... Figure 4 They are essentially the same. Any redundant descriptions will be omitted, and the differences will be described below.

[0248] like Figure 25 As shown, multiple first electrodes 210_5 and multiple second electrodes 220_5 can extend in each sub-pixel PXn along the second direction DR2. An outer embankment 430 can also extend along the second direction DR2. The second electrodes 220_5 and the outer embankment 430 can also extend to other adjacent sub-pixels PXn along the second direction DR2. Therefore, adjacent sub-pixels PXn along the second direction DR2 can receive the same electrical signal from the second electrode 220_5.

[0249] and Figure 3 The display device 10 is different, in Figure 25 In the display device 10_5, a second electrode contact hole CNTS may be provided in each of the second electrodes 220_5. Each of the second electrodes 220 can be electrically connected to the power supply electrode 162 of the circuit device layer PAL through the second electrode contact hole CNTS located in each sub-pixel PXn. Although the second electrode contact hole CNTS is formed in each of the two second electrodes 220_5 in the figures, the disclosure is not limited thereto.

[0250] In other words, the first electrode 210_5 can extend along the second direction DR2, but can terminate at the boundary of each sub-pixel PXn. Adjacent sub-pixels PXn along the second direction DR2 can each include the first electrode 210_5 spaced apart from each other, and can receive different electrical signals through the first electrode contact hole CNTD. This shape of the first electrode 210_5 can be formed during the manufacturing process of the display device 10_5 by the following steps: forming the first electrode 210_5 extending along the second direction DR2, and then cutting the first electrode 210_5 at the boundary between adjacent sub-pixels PXn. Figure 25 In one embodiment, a light-emitting device 300_5 between a first electrode 210_5 and a second electrode 220_5 can be connected in parallel to a light-emitting device 300 between another first electrode 210_5 and another second electrode 220_5.

[0251] exist Figure 25In the display device 10_5, some of the electrodes 210_5 and 220_5 may be floating electrodes that are not electrically connected to the circuit device layer PAL through electrode contact holes CNTD and CNTS. For example, only the outer electrodes of electrodes 210_5 and 220_5 can receive electrical signals through electrode contact holes CNTD and CNTS, and the electrodes 210_5 and 220_5 disposed between them may not directly receive electrical signals. In this case, some of the second electrodes 220_5 (e.g., second electrodes 220_5 disposed between different first electrodes 210_5) may extend in the second direction DR2, but like the first electrodes 210_5, they may terminate at the boundary of each sub-pixel PXn so as not to be located in another sub-pixel PXn. When some of the electrodes 210_5 and 220_5 are floating electrodes, the light-emitting devices 300_5 disposed between them may be partially connected in series in addition to being connected in parallel. The outer embankment 430 can be disposed at the boundary between adjacent sub-pixels PXn along the first direction DR1, extending in the second direction DR2. Although not shown in the figures, the outer embankment 430 can also be disposed at the boundary between adjacent sub-pixels PXn along the second direction DR2, extending in the first direction DR1. The outer embankment 430 is consistent with the above reference. Figure 3 The description of the outer dike 430 is the same. Additionally, it includes... Figure 25 The first contact electrode 261_5 and the second contact electrode 262_5 in the display device 10_5 are included with Figure 3 The first contact electrode 261 and the second contact electrode 262 in the display device 10 are substantially the same.

[0252] exist Figure 25 The display device 10_5 is provided with two first electrodes 210_5 and two second electrodes 220_5, which are alternately spaced apart from each other. However, the disclosure is not limited thereto; some electrodes may be omitted, or more electrodes may be provided in the display device 10_5.

[0253] In the display device 10, the first electrode 210 and the second electrode 220 do not necessarily extend in the same direction. The first electrode 210 and the second electrode 220 of the display device 10 are not limited to a specific shape, as long as they are spaced apart from each other to provide space in which the light-emitting device 300 is disposed.

[0254] Figure 26 This is a plan view of the pixels of the display device according to an embodiment.

[0255] Reference Figure 26According to the embodiment, the first electrode 210_6 and the second electrode 220_6 of the display device 10_6 can be bent at least partially, and the bent regions of the first electrode 210_6 and the second electrode 220_6 can be spaced apart to face each other. Figure 26 The display device 10_6 and Figure 2 The difference in the display device 10 lies in the shape of each of the first electrode 210_6 and the second electrode 220_6. Therefore, any redundant description will be omitted, and the differences will be mainly described below.

[0256] Figure 26 The first electrode 210_6 of the display device 10_6 may include a plurality of holes HOL. For example, as shown in the figures, the first electrode 210_6 may include a first hole HOL1, a second hole HOL2, and a third hole HOL3 arranged along the second direction DR2. However, the disclosure is not limited thereto; the first electrode 210_6 may include a larger or fewer number of holes HOL, or may include only one hole HOL. The following will describe, as an example, the case where the first electrode 210_6 includes a first hole HOL1, a second hole HOL2, and a third hole HOL3.

[0257] In an embodiment, each of the first hole HOL1, the second hole HOL2, and the third hole HOL3 may have a circular planar shape. Therefore, the first electrode 210_6 may include a curved region formed by each of the holes HOL, and may face the second electrode 220_6 in the curved region. However, this is merely an example, and the disclosure is not limited thereto. Each of the first hole HOL1, the second hole HOL2, and the third hole HOL3 is not limited to a particular shape, as long as it provides space for the second electrode 220_6 to be disposed therein, as will be described later, and may have various planar shapes such as elliptical, quadrilateral, or more polygonal shapes.

[0258] Multiple second electrodes 220_6 can be configured in each sub-pixel PXn. For example, three second electrodes 220_6 can be configured in each sub-pixel PXn to correspond to the first holes HOL1 to the third holes HOL3 of the first electrode 210_6. The second electrodes 220_6 can be located in the first holes HOL1 to the third holes HOL3 respectively, and can be surrounded by the first electrode 210_6.

[0259] In an embodiment, the hole HOL of the first electrode 210_6 may have a curved outer surface, and the second electrode 220_6 disposed in the hole HOL of the first electrode 210_6 may have a curved outer surface and may be spaced apart from the first electrode 210_6 to face the first electrode 210_6. For example... Figure 26As shown, the first electrode 210_6 may include a hole HOL having a circular shape in the plan view, and the second electrode 220_6 may also have a circular shape in the plan view. The curved surface of the region where the hole HOL of the first electrode 210_6 is formed may be spaced apart from the curved outer surface of the second electrode 220_6 to face the curved outer surface of the second electrode 220_6. For example, the first electrode 210_6 may surround the outer surface of the second electrode 220_6.

[0260] As described above, the light-emitting device 300_6 can be disposed between the first electrode 210_6 and the second electrode 220_6. The display device 10_6 according to the current embodiment may include a second electrode 220_6 having a circular shape and a first electrode 210_6 surrounding the second electrode 220_6, and the light-emitting device 300_6 can be arranged along the curved outer surface of the second electrode 220_6. Since the light-emitting device 300_6 extends in one direction as described above, the light-emitting devices 300_6 arranged along the curved outer surface of the second electrode 220_6 in each sub-pixel PXn can be configured such that their extending directions face different directions. Each sub-pixel PXn can have various light emission directions depending on the direction faced by the extending direction of the light-emitting device 300_6. In the display device 10_6 according to the current embodiment, since the first electrode 210_6 and the second electrode 220_6 are configured to have curved shapes, the light-emitting device 300_6 disposed between them can face different directions, and the lateral visibility of the display device 10_6 can be improved.

[0261] In summarizing the detailed description, those skilled in the art will understand that many changes and modifications can be made to the preferred embodiments without substantially departing from the principles of the invention. Therefore, the preferred embodiments of the invention disclosed are used only in a general and descriptive sense and not for limiting purposes.

Claims

1. A light-emitting device, the light-emitting device comprising: A first semiconductor layer, doped with a first polarity dopant and comprising a first portion extending in a first direction and a second portion connected to one side of the first portion; The second semiconductor layer is doped with a dopant of a second polarity different from that of the first semiconductor layer; An active layer is disposed between the first semiconductor layer and the second semiconductor layer; as well as An insulating film, surrounding at least the outer surface of the active layer and extending in the first direction. Wherein, the diameter of the second part measured in a second direction perpendicular to the first direction is larger than the diameter of the first part measured in the second direction, and the side surface of the second part is inclined, and The insulating film surrounds the outer surface of the first portion of the first semiconductor layer, and the side surface of the second portion is exposed without contacting the insulating film.

2. The light-emitting device according to claim 1, wherein The length of the second part is 10% of the length of the light-emitting device.

3. The light emitting device of claim 1, wherein, The second part includes an upper surface connected to the first part and a lower surface facing the upper surface, and The diameter of the lower surface of the second part is greater than the diameter of the upper surface.

4. The light-emitting device according to claim 3, wherein The diameter of the lower surface of the second portion of the first semiconductor layer is 1.25 to 1.8 times the diameter of the first portion of the first semiconductor layer.

5. The light emitting device of claim 4, wherein, The lower surface of the second part has a diameter of 750 nm to 900 nm.

6. The light-emitting device according to claim 5, wherein The diameter of the lower surface of the second portion is greater than the sum of the diameter of the first portion and the thickness of the insulating film.

7. The light-emitting device according to claim 3, wherein At least a portion of the upper surface of the second part contacts the insulating film.

8. The light-emitting device according to claim 3, wherein, The included angle formed by the lower surface and the side surface of the second part is in the range of 65 degrees to 80 degrees.

9. The light-emitting device according to claim 1, wherein the light-emitting device further comprises an electrode layer disposed on the second semiconductor layer.

10. The light-emitting device according to claim 9, wherein, A portion of the side surface of the electrode layer is exposed without contacting the insulating film.

11. The light-emitting device according to claim 10, wherein, The insulating film has a curved outer surface, such that the thickness of the insulating film decreases along the first direction.

12. A method for manufacturing a light-emitting device, the method comprising the following steps: Prepare a substrate and form a semiconductor structure disposed on the substrate and including a first semiconductor; A plurality of holes and semiconductor crystals are formed by partially etching the semiconductor structure, the plurality of holes exposing a portion of the first semiconductor, and the semiconductor crystals comprising a portion of the first semiconductor and spaced apart from each other; as well as An insulating film is formed on the outer surface of the semiconductor crystal and on the exposed portion of the first semiconductor, and a device rod formed by etching the insulating film and the first semiconductor stacked with the plurality of holes is separated from the substrate. Each of the device rods comprises: a first semiconductor layer, including a first portion extending in one direction and a second portion connected to one side of the first portion and having a diameter larger than that of the first portion; an active layer disposed on the first portion of the first semiconductor layer; and a second semiconductor layer disposed on the active layer. The insulating film surrounds the outer surface of the first portion of the first semiconductor layer, and the side surface of the second portion is exposed without contacting the insulating film.

13. The method according to claim 12, wherein, Each of the semiconductor crystals includes the first portion of the first semiconductor layer, and In the step of forming the device bar, the first semiconductor exposed along the plurality of holes is etched to form the second portion of the first semiconductor layer, and the insulating film is partially removed to expose the upper surface of the semiconductor crystal.

14. The method according to claim 13, wherein, Each of the device bars also includes an electrode layer disposed on the second semiconductor layer.

15. A display device, the display device comprising: Base; A first electrode and a second electrode, wherein the first electrode is disposed on the substrate and the second electrode is spaced apart from the first electrode; as well as At least one light-emitting device as defined in any one of claims 1 to 11 is disposed between the first electrode and the second electrode and electrically connected to the first electrode and the second electrode.

16. The display device according to claim 15, further comprising: The first contact electrode contacts one end of the first electrode and the light-emitting device; as well as The second contact electrode contacts the second electrode and the other end of the light-emitting device.

17. The display device according to claim 16, wherein, The second contact electrode contacts the second portion of the first semiconductor layer, and forms a first contact surface that contacts the lower surface of the second portion and a second contact surface that contacts the side surface of the second portion. The first contact electrode contacts the upper surface of the electrode layer to form a third contact surface, and the electrode layer is disposed on the second semiconductor layer.

18. The display device according to claim 17, wherein, The area of ​​the first contact surface is greater than the area of ​​the third contact surface.

19. The display device according to claim 17, wherein, The first contact surface and the second contact surface are not parallel to each other.

20. The display device according to claim 17, wherein, The insulating film of the light-emitting device partially surrounds the side surface of the electrode layer, and The first contact electrode contacts the exposed side surface of the electrode layer.

21. The display device according to claim 16, wherein, Each of the first contact electrode and the second contact electrode partially contacts the insulating film of the light-emitting device.

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